Spherical substrate diamond film suspension growth device

Abstract

The invention discloses a spherical substrate diamond film suspension growth device which comprises a cavity used for providing a reaction environment and a deposition base used for bearing a spherical substrate. The cavity is provided with a gas inlet and a gas outlet, reaction gas enters the cavity through the gas inlet, waste gas in the cavity is discharged through the gas outlet, and the gas inlet is communicated with the gas outlet; the deposition base is arranged in the cavity and matched with the airflow channel, an airflow suspension assembly and / or an electromagnetic suspension assembly are / is arranged on the deposition base, and the airflow suspension assembly and / or the electromagnetic suspension assembly suspend the spherical substrate above the deposition base and place the spherical substrate into a reaction environment.

Description

Technical Field

[0001] The invention belongs to the technical field of microwave plasma chemical vapor deposition, and in particular relates to a spherical substrate diamond film suspension growth device. Background Art

[0002] Diamond films have been widely used in mechanical processing, electronic devices, optical materials and other fields due to their excellent mechanical properties, thermal conductivity, chemical stability and optical properties. Chemical vapor deposition (CVD) technology, especially microwave plasma chemical vapor deposition (MPCVD), is an important method for preparing high-quality diamond films. Traditional MPCVD devices are mainly designed for planar substrates, and significant progress has been made in deposition uniformity and grain orientation control. However, for the growth of diamond films on spherical or curved substrates, existing devices and processes have technical bottlenecks.

[0003] Depositing diamond films on spherical substrates has unique advantages, such as spherical lenses and high-strength spherical devices used in the optical field. However, due to the geometric characteristics of the spherical substrate, the non-uniformity of plasma distribution and the complexity of substrate rotation control, the temperature distribution and chemical reaction conditions on the surface of the spherical substrate are difficult to accurately control, resulting in uneven distribution of film thickness and quality. In addition, spherical substrates usually require high-precision support and motion control during the deposition process, but traditional fixed support methods are prone to introduce mechanical interference or affect the deposition area, limiting the high-quality preparation of spherical diamond films.

[0004] At present, some studies have attempted to improve the deposition uniformity on spherical substrates by rotating the substrate or changing the plasma shape, but these methods often require complex mechanical transmission systems, which makes it difficult to ensure the stability and accuracy of the system. At the same time, the mechanical contact support method is prone to introduce impurity contamination or cause substrate surface damage in a high temperature environment, further affecting the quality of the film. Therefore, the development of a non-contact, controllable and high-precision spherical substrate support and rotation system has become the key to solving the technical difficulties of MPCVD spherical substrate diamond film growth. Summary of the invention

[0005] Based on the above background, the present application proposes a spherical substrate diamond film suspension growth device, which aims to achieve non-contact support and high-precision rotation of the spherical substrate through gas and / or electromagnetic suspension and spin control technology, and solve the technical bottlenecks of uniformity and high-quality film preparation during the spherical substrate deposition process.

[0006] The technical scheme includes: a spherical substrate diamond film suspension growth device, including a cavity for providing a reaction environment and a deposition base for carrying the spherical substrate; the cavity is provided with an air inlet and an air outlet, the air inlet is for reaction gas to enter, the air outlet is for exhaust gas in the cavity to be discharged, and the air inlet is communicated with the air outlet; the deposition base is arranged in the cavity and adapted to the air flow channel, the deposition base is provided with an air flow suspension component and / or an electromagnetic suspension component, the air flow suspension component and / or the electromagnetic suspension component suspends the spherical substrate above the deposition base and places the spherical substrate in the reaction environment.

[0007] Preferably, an airflow suspension component is provided on the deposition base, and the airflow suspension component is provided with a plurality of airflow nozzles, and the plurality of airflow nozzles spray gas between the deposition base and the spherical substrate to form an airflow support layer, so as to suspend the spherical substrate above the deposition base and place the spherical substrate in a reaction environment.

[0008] Preferably, an electromagnetic suspension component is provided on the deposition base, and the electromagnetic suspension component is provided with an electromagnetic coil, which forms a magnetic field between the deposition base and the spherical substrate and suspends the spherical substrate above the deposition base through the magnetic field and places the spherical substrate in a reaction environment.

[0009] Preferably, an airflow suspension component and an electromagnetic suspension component are provided on the deposition base, the airflow suspension component is provided with a plurality of airflow nozzles, and the plurality of airflow nozzles spray gas between the deposition base and the spherical substrate to form an airflow support layer; the electromagnetic suspension component is provided with an electromagnetic coil, and the electromagnetic coil forms a magnetic field between the deposition base and the spherical substrate; the airflow support layer cooperates with the magnetic field to suspend the spherical substrate above the deposition base and place the spherical substrate in a reaction environment.

[0010] Preferably, the transverse cross-section of the cavity is circular, the air inlet is arranged at the top of the cavity, and there are multiple air outlets that are equidistantly distributed with the center of the bottom surface of the cavity as the center.

[0011] Preferably, the cavity includes a first chamber at the top and a second chamber at the bottom, the air inlet is arranged at the top center of the first chamber, the deposition base is arranged in the second chamber, the first chamber and the second chamber are connected to form an integrated space, and the diameter of the first chamber is smaller than the diameter of the second chamber, and there are multiple air outlets that are equidistantly distributed with the center of the bottom surface of the second chamber as the center.

[0012] Preferably, it is characterized in that a base and a gas supply pipe connected to the base are provided under the deposition base, a conduit is provided at the lower part of the cavity, the gas supply pipe is passed through the conduit, and the space between the outer wall of the gas supply pipe and the inner wall of the conduit constitutes a waveguide channel, and the waveguide channel is used to transmit the microwave energy emitted by the microwave source into the cavity.

[0013] Preferably, a temperature sensor is also provided on the deposition base, and the temperature sensor is used to detect the temperature of the spherical substrate.

[0014] Preferably, the airflow suspension component also includes an air inlet channel arranged in the air supply pipe and an airflow regulating mechanism arranged in the base, the air inlet channel is connected to the multiple airflow nozzles through the airflow regulating mechanism, the airflow regulating mechanism controls the multiple airflow nozzles to spray air to suspend the spherical base, and controls the jet velocity difference of the outermost 1-3 layers of airflow nozzles to provide power for the suspended spin of the spherical base.

[0015] Preferably, the deposition base includes an inner base, which is in the shape of an inner concave spherical surface, and the center position of the sphere is adapted to the spherical base; the inner base is provided with at least 30 air flow nozzles, and the air flow nozzles are regularly distributed with the center of the inner base as the center of the circle, the diameter of the air flow nozzles is 3 to 5 mm, and the nozzle spacing is 2 to 3 mm.

[0016] Preferably, the air flow nozzle is inclined toward the center of the spherical base, and the inclination angle is 0°-30°.

[0017] Preferably, a temperature control component is provided under the deposition base, the temperature control component is sleeved on the outside of the base and connected to a temperature sensor, and the temperature control component is used to adjust the temperature of the airflow ejected from the airflow nozzle and thus adjust the reaction environment temperature.

[0018] Preferably, the base and the bottom surface of the cavity are provided with a quartz waveguide window, and the quartz waveguide window isolates the waveguide channel from the space inside the cavity to prevent the cavity airflow or impurities from entering the waveguide channel.

[0019] The present application suspends the spherical substrate above the deposition base through an airflow suspension component and / or an electromagnetic suspension component and places the spherical substrate in a reaction environment, drives the spherical substrate to spin by controlling the airflow and / or magnetic field changes, thereby achieving non-contact support and high-precision rotation of the spherical substrate, and realizing uniformity and high-quality thin film preparation during the spherical substrate deposition process. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 is a vertical schematic diagram of the device structure provided by an embodiment of the present invention; Figure 2is an enlarged schematic diagram of a gas nozzle provided in an embodiment of the present invention; Figure 3 is a schematic diagram of airflow controlling the suspension and spin of a spherical substrate provided by an embodiment of the present invention; Figure 4 is a schematic diagram of an electromagnetic suspension assembly provided by an embodiment of the present invention; Figure 5 is the electron density distribution result after simulation of the device provided by the embodiment of the present invention; Figure 6 is the H atom number distribution result after simulation by the device provided in the embodiment of the present invention; Figure 7 is the temperature distribution result after simulation of the device provided by the embodiment of the present invention; Figure 8 This is a process flow chart of the method for growing diamond films on spherical substrates provided by the present invention. DETAILED DESCRIPTION

[0021] The technical solution of the present application will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present application.

[0022] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0023] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be the internal connection of two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances. The present invention will be further described in detail below in conjunction with the accompanying drawings.

[0024] Reference Figure 1The present invention discloses a spherical substrate diamond film suspension growth device, comprising a chamber 100 for providing a reaction environment and a deposition base 200 for carrying a spherical substrate 500; Figure 1 As shown, the cavity is provided with an air inlet 101 and an air outlet 102, the air inlet is for the reaction gas to enter, the air outlet is for the exhaust gas in the cavity to be discharged, and the air inlet is connected to the air outlet; the deposition base is arranged in the cavity and adapted to the air flow channel, and the deposition base is provided with an air flow suspension component and / or an electromagnetic suspension component, and the air flow suspension component and / or the electromagnetic suspension component suspend the spherical substrate above the deposition base and place the spherical substrate in the reaction environment. In this embodiment, the spherical substrate is suspended above the deposition base and placed in the reaction environment by the air flow suspension component and / or the electromagnetic suspension component, and the spherical substrate is driven to spin by controlling the air flow and / or magnetic field changes, thereby realizing non-contact support and high-precision rotation of the spherical substrate, and realizing uniformity and high-quality film preparation during the deposition process of the spherical substrate. In this embodiment, the cavity is made of high-temperature resistant metals, such as 304 stainless steel, 316L stainless steel, high-temperature alloy (Hastelloy C-276) or ceramic materials such as one or more of alumina (Al2O3) and silicon nitride (Si3N4), which can work stably for a long time under high temperature and high pressure environment and ensure the stability of the atmosphere, thereby providing ideal conditions for thin film growth.

[0025] Based on the above embodiments, further referring to Figure 1 or Figure 3 In the present application, when the suspension and the spinning of the spherical substrate are realized by airflow, an airflow suspension component is provided on the deposition base, and the airflow suspension component is provided with a plurality of airflow nozzles 201. The plurality of airflow nozzles spray gas between the deposition base and the spherical substrate to form an airflow support layer, suspend the spherical substrate above the deposition base and place the spherical substrate in the reaction environment. In this embodiment, the airflow nozzles are generally arranged below the spherical substrate and the various airflow nozzles are regularly distributed by airflow suspension. Figure 2 In the embodiment, a plurality of air flow nozzles 201 are arranged on a deposition base 200 inside the chamber 100 to form an air flow support grid surrounding the spherical substrate. Figure 2 The arrangement and layout of these airflow nozzles are shown. The airflow nozzles are densely arranged in an array and arranged in a certain curvature around the lower part of the spherical base, such as Figure 2 As shown, the plurality of airflow nozzles are first arranged according to a cross line, dividing the deposition base space into four sector-shaped areas, and the number of airflow nozzles in each sector-shaped area gradually increases. Figure 3As shown, the deflected airflow 202 ejected from the airflow nozzle on one side is slightly stronger than that on the other side, forming a lateral airflow 501 above the spherical substrate 500, and the spherical substrate is spin-deflected under the drive of the lateral airflow. In addition, the corresponding airflow nozzle needs to be controlled to eject the deflected airflow for different deflection directions to achieve full coverage and uniform growth of the spherical substrate. In this embodiment, the gas ejected from the airflow nozzle can be preferably an inert gas such as argon (Ar), nitrogen (N2), helium (He) that does not affect the chemical reaction of the deposition process, and mainly plays the role of airflow support and substrate suspension.

[0026] Based on one or more of the above embodiments, further, referring to Figure 4 In the present application, when suspension and spherical substrate spinning are achieved through a magnetic field, an electromagnetic suspension component 600 is provided on the deposition base, and the electromagnetic suspension component is provided with an electromagnetic coil 601, which forms a magnetic field between the deposition base and the spherical substrate and suspends the spherical substrate above the deposition base through the magnetic field and places the spherical substrate in the reaction environment. The electromagnetic suspension support device generates a stable magnetic field to act on the spherical substrate by arranging the electromagnetic coil 601, so as to suspend it in the reaction gas. The intensity and direction of the electromagnetic field are adjusted in real time by the electromagnetic control system, so as to accurately control the suspension and spinning state of the substrate.

[0027] On the basis of one or more of the above embodiments, further, in the present application, when the suspension and the spherical substrate spin are realized by the cooperation of airflow and magnetic field, the deposition base is provided with an airflow suspension component and an electromagnetic suspension component, the airflow suspension component is provided with a plurality of airflow nozzles, and the plurality of airflow nozzles eject gas between the deposition base and the spherical substrate to form an airflow support layer; the electromagnetic suspension component is provided with an electromagnetic coil, and the electromagnetic coil forms a magnetic field between the deposition base and the spherical substrate; the airflow support layer cooperates with the magnetic field to suspend the spherical substrate above the deposition base and place the spherical substrate in the reaction environment. In this embodiment, the magnetic field and the airflow can cooperate to control the suspension spin more accurately and sensitively, such as suspending the spherical substrate by airflow, adjusting the spin angle and speed of the spherical substrate by controlling the magnetic field intensity, and the magnetic field control is more sensitive and accurate. Or the spherical substrate is suspended by the magnetic field, and the spin of the spherical substrate is controlled by the airflow. Or the magnetic field and the airflow cooperate to achieve suspension, and the suspension is more stable.

[0028] Based on one or more of the above embodiments, further, referring to Figure 1 The transverse cross section of the cavity is circular, the air inlet is arranged at the top of the cavity, and the air outlet is provided in a plurality and is evenly distributed with the center of the bottom of the cavity as the center. In this embodiment, the reaction gas enters the reaction environment downward from the air inlet and then disperses and discharges, thereby improving the uniformity of the reaction gas circulation in the reaction environment.

[0029] Based on one or more of the above embodiments, further, in combination with Figure 1 , the cavity includes a first chamber at the top and a second chamber at the bottom, the air inlet is arranged at the center of the top of the first chamber, the deposition base is arranged in the second chamber, the first chamber and the second chamber are connected to form an integrated space, and the diameter of the first chamber is smaller than the diameter of the second chamber, and there are multiple air outlets which are equidistantly distributed with the center of the bottom of the second chamber as the center. In this embodiment, the space in the cavity is divided into a first chamber for air intake at the top and a second chamber for reaction at the bottom. The first chamber stabilizes the air intake flow, and the second chamber reaches the deposition base after the air flow diffuses. The structure of the first chamber and the second chamber further ensures the stability of the air flow and ensures that the air flow fully passes through the spherical substrate.

[0030] Based on one or more of the above embodiments, further, in combination with Figure 1 and Figure 3 , Figure 4 A base and a gas supply pipe 400 connected to the base are provided below the deposition base, a conduit is provided at the lower part of the cavity, the gas supply pipe is passed through the conduit, and the space between the outer wall of the gas supply pipe and the inner wall of the conduit constitutes a waveguide channel 104, and the waveguide channel is used to transmit the microwave energy emitted by the microwave source into the cavity.

[0031] Based on one or more of the above embodiments, further, a temperature sensor 301 is provided on the deposition base, and the temperature sensor is used to detect the temperature of the spherical substrate. In this embodiment, in order to ensure the stability of the deposition base, the temperature of the deposition base is further sensed by the temperature sensor. The temperature sensor of this embodiment is preferably arranged at the center of the airflow nozzle, that is, the center of the deposition base, so that the airflow temperature and the temperature of the spherical substrate are sensed more timely.

[0032] On the basis of one or more of the above embodiments, further, the airflow suspension component also includes an air inlet channel arranged in the air supply pipeline and an airflow regulating mechanism arranged in the base, the air inlet channel is connected to the multiple airflow nozzles through the airflow regulating mechanism, the airflow regulating mechanism controls the multiple airflow nozzles to eject airflow to suspend the spherical substrate, and controls the jet velocity difference of the outermost 1-3 layers of airflow nozzles to provide power for the suspension spin of the spherical substrate. This embodiment is used to accurately adjust the airflow speed and direction in the cavity to ensure that the spherical substrate is stably suspended and maintains appropriate spin during the deposition process. The airflow regulating mechanism controls the distribution pattern of the airflow by adjusting the airflow pressure and direction of the nozzle to ensure uniform airflow support of the substrate. In order to avoid the high air pressure of a single airflow nozzle disturbing the overall airflow, or the excessive flow rate of a single airflow nozzle causing unstable spin control, the present application uses 1-3 layers of airflow nozzles for spin regulation to coordinate the spin of the spherical substrate to improve the stability of the spin.

[0033] Based on one or more of the above embodiments, further, in combination with Figure 2 and Figure 3 The deposition base includes an inner base, which is in the shape of an inner concave sphere, and the center position of the sphere matches the spherical base; the inner base is provided with at least 30 airflow nozzles, which are regularly distributed with the center of the inner base as the center of the circle, and the diameter of the airflow nozzles is 3 to 5 mm, and the nozzle spacing is 2 to 3 mm. Based on one or more of the above embodiments, further, combined with Figure 2 and Figure 3 , the airflow nozzle is inclined toward the center of the spherical substrate, and the inclination angle is 0°-30°. In the above embodiment, the number and distribution of the airflow nozzles are intended to provide a stable and uniform airflow distribution, and a slight deviation in the direction of the airflow nozzles or a difference in the airflow speed between the nozzles can be controlled to generate a slight rotational torque, thereby causing the spherical substrate to spin.

[0034] Based on one or more of the above embodiments, further, referring to Figure 1 , Figure 4 , a temperature control component 300 is provided under the deposition base, the temperature control component is sleeved on the outside of the base and connected to the temperature sensor, and the temperature control component is used to adjust the temperature of the airflow ejected from the airflow nozzle and then adjust the temperature of the reaction environment. By real-time monitoring the feedback of the temperature sensor, the temperature of the airflow output from the nozzle is controlled in real time, so as to achieve fine temperature control during the growth of the diamond film and avoid drastic fluctuations in the surface temperature of the substrate. Through this precise temperature control, the quality of the film can be improved, thereby ensuring the density and uniformity of the film. In this embodiment, the temperature adjustment component adjusts the surface temperature of the spherical substrate to 700~1000℃.

[0035] Based on one or more of the above embodiments, further, in combination with Figure 1 , Figure 4 The base and the bottom surface of the cavity are provided with a quartz waveguide window, and the quartz waveguide window 103 isolates the waveguide channel from the space inside the cavity to prevent the cavity airflow or impurities from entering the waveguide channel.

[0036] In the present invention, reference is made to Figure 1-4 And the structure of one or more of the above embodiments, when the airflow suspension component is used, the cavity, that is, the MPCVD cavity 100, adopts a hollow cylindrical or stepped hollow cylindrical design, which is mainly used to provide a stable reaction environment and accommodate the reaction gases required in the thin film growth process. A microwave feeding system is provided at the lower part of the cavity 100, which is connected to the microwave source through a waveguide 104 to excite the reaction gas (such as methane CH4 and hydrogen H2). The air inlet 101 of the cavity 100 is located at the top and is responsible for introducing the reaction gas, while the air outlet 102 is located at the bottom and is used to discharge the exhaust gas. A quartz waveguide window 103 is also provided inside the cavity to play a role in microwave transmission and sealing protection. The gas suspension component forms an airflow support grid surrounding the spherical substrate by arranging a plurality of airflow nozzles 201 on the deposition base 200 inside the MPCVD cavity 100. Figure 2 The arrangement and layout of these airflow nozzles are shown, which are densely arranged in an array and arranged with a certain curvature around the lower part of the spherical substrate. The airflow suspension assembly also includes an air inlet channel arranged in the air supply pipeline and an airflow adjustment mechanism arranged in the base. The airflow adjustment mechanism is located inside the deposition base 200 and is responsible for accurately adjusting the speed and direction of the supporting airflow to ensure a stable suspension state and slight spin of the substrate during the deposition process. Figure 3 The schematic diagram in the figure clearly shows how the airflow suspension component forms a uniform airflow field by precisely adjusting the airflow at the airflow nozzle, thereby maintaining the suspension and spin state of the substrate. The tiny torque of the spherical substrate spin comes from the slight deviation of the airflow velocity.

[0037] The temperature control component mounted on the outside of the base platform controls the surface temperature of the spherical base 500 by real-time monitoring the feedback of the temperature sensor 301 and then adjusting the air flow temperature of the air flow regulating mechanism.

[0038] like Figure 4 As shown, the present invention provides another implementation method based on electromagnetic suspension. In this embodiment, the electromagnetic suspension component is provided with an electromagnetic base 600, and an electromagnetic coil 601 is provided inside the electromagnetic base 600. The electromagnetic suspension component generates a stable magnetic field to act on the spherical substrate by arranging the electromagnetic coil 601, so as to suspend it in the airflow. The intensity and direction of the electromagnetic field are adjusted in real time by the electromagnetic control system, so as to accurately control the suspension and spin state of the substrate.

[0039] The primary diamond film growth process of the present invention includes: S1: Substrate loading. In this process, the spherical substrate 500 is mounted on the deposition base 200, and the gas flow nozzle system is ensured to be installed according to the optimization scheme. The number, angle and arrangement of the gas flow nozzles 201 ensure that the gas flow evenly covers the substrate and makes it suspend and spin.

[0040] S2: Introducing reaction gas. Reaction gas is introduced through the gas inlet 101 at the top of the chamber. Commonly used gases include methane (CH4) and hydrogen (H2). The flow rate and ratio of the gas are adjusted according to the actual process requirements to ensure an atmosphere suitable for the growth of diamond film.

[0041] S3: Excite the microwave source. Start the microwave source and transmit microwave energy to the cavity through the waveguide channel 104 to excite gas decomposition and generate carbon sources (such as CH groups after methane decomposition). The microwave energy remains stable to ensure the continuity of gas decomposition.

[0042] According to the first embodiment provided by the present invention, the following steps are performed: S41: Airflow control and substrate suspension. The airflow adjustment mechanism is activated to adjust the airflow pressure and direction of each nozzle 201 so that the spherical substrate is suspended under the support of the airflow and maintains a slight spinning state.

[0043] S51: Temperature control. Start the temperature control component and adjust the air flow temperature according to the real-time feedback from the temperature sensor 301 to keep the substrate surface within the ideal deposition temperature range. Fine temperature control helps improve the quality of the diamond film.

[0044] In addition, when the present application adopts the electromagnetic suspension method, the thin film growth process of the spherical substrate of the present application is mainly different from the airflow suspension method in the suspension process, and the electromagnetic suspension replaces the airflow suspension, and the steps are as follows: S42: Electromagnetic control of suspension and spin. The electromagnetic control system is started to generate a stable magnetic field through the electromagnetic coil 601 arranged inside the electromagnetic base 600, thereby applying electromagnetic force to the spherical substrate to suspend it in the airflow. The intensity and direction of the electromagnetic field can be adjusted in real time by the control system to ensure stable suspension of the substrate during the deposition process, and the spin control of the substrate can be achieved by fine-tuning the parameters of the electromagnetic field.

[0045] According to the two embodiments provided by the present invention, the following steps are the same, and are specifically as follows: S6: Film growth. Under stable atmosphere, temperature and gas flow conditions, the diamond film begins to deposit. The carbon source in the reaction gas reacts with the hydrogen to form a diamond film.

[0046] S7: Deposition termination and cooling. When the diamond film reaches the desired thickness, the reaction gas supply is gradually stopped, the microwave power is reduced, and the temperature in the cavity is gradually lowered. The cooling process should be carried out slowly to avoid thermal stress causing cracks in the substrate or film.

[0047] In practice, if one wants to further obtain higher quality diamond films, the above two methods can also be designed together, that is, the film can be grown by combining airflow suspension and electromagnetic suspension, and the growth steps refer to the steps related to airflow suspension and electromagnetic suspension.

[0048] In addition, please see the attached Figure 5 , 6 、7. Figure 5 It reflects the distribution of electron density in the cavity and reveals the dissociation and ionization of the gas after microwave excitation; Figure 6 The distribution of the number of hydrogen atoms on the upper portion of the deposition substrate 200 is shown; Figure 7 The temperature distribution inside the MPCVD chamber 100 is shown. Through these finite element simulation results, the device can realize the electron density concentrated in a stepped distribution above the deposition substrate 200, which can effectively excite the reaction gas; the hydrogen atoms are concentrated in a stepped distribution above the deposition substrate 200 to ensure the high efficiency of the growth process; at the same time, the temperature simulation results also ensure the rationality of the surface temperature at the spherical substrate position. These simulation results fully verify the superior performance and reliability of the device in the growth of diamond films.

[0049] The present invention is mainly aimed at the growth of diamond films on spherical or other curved substrates, and is particularly suitable for application fields that require high uniformity and high-quality diamond films, such as spherical substrate diamond coatings, optoelectronic devices, micro sensors, thermal management components, etc. By precisely controlling the suspension and spin of the substrate, the shadow effect and stress concentration caused by mechanical support are avoided, and uniform and dense diamond film deposition can be achieved on spherical and curved substrates. This technology is widely applicable to the preparation of high-performance diamond films, especially in the application of miniaturization and curved substrates, and has significant advantages and high industrial value.

[0050] The main beneficial effects of this application include: 1. Innovative solution to the problem of thin film growth on spherical substrates. The present invention realizes the technical innovation of uniformly growing diamond films on spherical substrates through suspension support, breaking through the technical bottleneck of traditional MPCVD devices on spherical substrates. It expands the application of diamond films on spherical substrates and has significant technical innovation and industrial application value. 2. Avoid the negative effects caused by mechanical support. The present invention adopts gas dynamics and electromagnetic suspension support technology to avoid the shadow effect and stress concentration problems brought by traditional mechanical support, and significantly improves the uniformity and quality of the film. 3. Improve film quality and growth efficiency: The present invention makes the film growth process more stable by precisely controlling the airflow, temperature and electromagnetic field, thereby improving the quality and growth efficiency of the diamond film. 4. Strong adaptability: The technology of the present invention is suitable for various spherical substrates, and can adjust parameters such as airflow configuration and electromagnetic field strength according to actual needs, and has broad application prospects.

[0051] The protection scope of the present invention is not limited thereto, and any change or replacement of the technical solution that can be thought of without creative work should be included in the protection scope of the present invention. The protection scope of the present invention shall be based on the protection scope defined in the claims.

Claims

1. A spherical substrate diamond film suspension growth device, characterized in that: It includes a chamber for providing a reaction environment and a deposition base for supporting a spherical substrate; The cavity is provided with an air inlet and an air outlet, the air inlet is for the reaction gas to enter, the air outlet is for the waste gas in the cavity to be discharged, and the air inlet is connected with the air outlet; The deposition base is arranged in the cavity and adapted to the airflow channel. The deposition base is provided with an airflow suspension component and / or an electromagnetic suspension component. The airflow suspension component and / or the electromagnetic suspension component suspends the spherical substrate above the deposition base and places the spherical substrate in a reaction environment.

2. The spherical substrate diamond film suspension growth device according to claim 1, characterized in that: An airflow suspension component is provided on the deposition base, and the airflow suspension component is provided with a plurality of airflow nozzles. The plurality of airflow nozzles spray gas between the deposition base and the spherical substrate to form an airflow support layer, so as to suspend the spherical substrate above the deposition base and place the spherical substrate in a reaction environment.

3. The spherical substrate diamond film suspension growth device according to claim 1, characterized in that: The deposition base is provided with an electromagnetic suspension component, and the electromagnetic suspension component is provided with an electromagnetic coil. The electromagnetic coil forms a magnetic field between the deposition base and the spherical substrate, and suspends the spherical substrate above the deposition base through the magnetic field and places the spherical substrate in a reaction environment.

4. The spherical substrate diamond film suspension growth device according to claim 1, characterized in that: The deposition base is provided with an airflow suspension component and an electromagnetic suspension component. The airflow suspension component is provided with a plurality of airflow nozzles, and the plurality of airflow nozzles spray gas between the deposition base and the spherical substrate to form an airflow support layer; the electromagnetic suspension component is provided with an electromagnetic coil, and the electromagnetic coil forms a magnetic field between the deposition base and the spherical substrate; the airflow support layer cooperates with the magnetic field to suspend the spherical substrate above the deposition base and place the spherical substrate in a reaction environment.

5. The spherical substrate diamond film suspension growth device according to any one of claims 2 to 4, characterized in that: The transverse cross section of the cavity is circular, the air inlet is arranged at the top of the cavity, and there are multiple air outlets which are equidistantly distributed with the center of the bottom surface of the cavity as the center.

6. The spherical substrate diamond film suspension growth device according to claim 5, characterized in that: The cavity includes a first chamber at the top and a second chamber at the bottom, the air inlet is arranged at the top center of the first chamber, the deposition base is arranged in the second chamber, the first chamber and the second chamber are connected to form an integrated space, and the diameter of the first chamber is smaller than the diameter of the second chamber, and there are multiple air outlets that are equidistantly distributed with the center of the bottom surface of the second chamber as the center.

7. The spherical substrate diamond film suspension growth device according to any one of claims 2 to 4, characterized in that: A base and a gas supply pipe connected to the base are provided below the deposition base, a conduit is provided at the lower part of the cavity, the gas supply pipe is passed through the conduit, and the space between the outer wall of the gas supply pipe and the inner wall of the conduit constitutes a waveguide channel, and the waveguide channel is used to transmit the microwave energy emitted by the microwave source into the cavity.

8. The spherical substrate diamond film suspension growth device according to claim 7, characterized in that: The deposition base is also provided with a temperature sensor, and the temperature sensor is used to detect the temperature of the spherical substrate.

9. The spherical substrate diamond film suspension growth device according to claim 8, characterized in that: The airflow suspension component also includes an air inlet channel arranged in the air supply pipeline and an airflow regulating mechanism arranged in the base. The air inlet channel is connected with the multiple airflow nozzles through the airflow regulating mechanism. The airflow regulating mechanism controls the multiple airflow nozzles to spray air to suspend the spherical base, and controls the jet velocity difference of the outermost 1-3 layers of airflow nozzles to provide power for the suspension and spin of the spherical base.

10. The spherical substrate diamond film suspension growth device according to claim 9, characterized in that: The deposition base includes an inner base, which is in the shape of an inner concave spherical surface, and the center position of the sphere is adapted to the spherical base; the inner base is provided with at least 30 air flow nozzles, and the air flow nozzles are regularly distributed with the center of the inner base as the center of the circle, the diameter of the air flow nozzles is 3 to 5 mm, and the nozzle spacing is 2 to 3 mm.

11. The spherical substrate diamond film suspension growth device according to claim 10, characterized in that: The air flow nozzle is inclined toward the center of the spherical base, and the inclination angle is 0°-30°.

12. The spherical substrate diamond film suspension growth device according to claim 9, characterized in that: A temperature control component is provided below the deposition base. The temperature control component is sleeved on the outside of the base and connected to a temperature sensor. The temperature control component is used to adjust the temperature of the airflow ejected from the airflow nozzle and thus adjust the reaction environment temperature.

13. The spherical substrate diamond film suspension growth device according to claim 7, characterized in that: The base and the bottom surface of the cavity are provided with a quartz waveguide window, and the quartz waveguide window isolates the waveguide channel from the space inside the cavity to prevent the cavity airflow or impurities from entering the waveguide channel.

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