Determination method of temperature sensing triode and far-end temperature sensing chip

Abstract

The invention provides a determination method of a temperature-sensitive triode and a far-end temperature sensing chip, and the method comprises the steps: applying a plurality of bias currents to an initial temperature-sensitive triode through a bias current generation module, and obtaining a plurality of bias voltages generated by the initial temperature-sensitive triode based on the plurality of bias currents; correcting the performance parameters of the initial temperature-sensing triode based on the voltage difference values between the plurality of bias voltages to obtain the parameter range of the target temperature-sensing triode; and based on the parameter range of the target temperature-sensing triode and the performance parameters of the plurality of temperature-sensing triodes, determining the target temperature-sensing triode from the plurality of temperature-sensing triodes.

Description

Technical Field

[0001] The present disclosure relates to the technical field of remote temperature sensor chips, and more specifically, to a method for determining a temperature-sensing transistor and a remote temperature sensor chip. Background Art

[0002] As the integration of advanced electronic systems becomes higher and higher, the heating problem becomes more and more serious. For example, telecommunication equipment, personal computers, highly integrated medical equipment, precision instruments and test equipment need to monitor the temperature of key components separately and perform thermal management on them, so as to keep the advanced systems working stably within the expected temperature range. At present, the common solution is to use remote temperature sensor chips to monitor the system thermally. Discrete transistors are arranged near the key components on the printed circuit board. The temperature-related measurement values ​​are established through the transistors. Then the analog-to-digital converter (ADC) in the remote temperature sensor chip samples and calculates it, and finally the temperature reading is obtained through digital processing. With the rapid development of technology and the increasing requirements of various industries for data accuracy and stability, in order to improve the temperature measurement accuracy, research on remote temperature sensor chips has begun. At the same time, there are also many commercial remote temperature sensor chips on the market.

[0003] At present, most mainstream integrated circuit manufacturers and researchers are committed to the research of remote temperature sensor chips to improve the remote temperature sensing accuracy. Although most commercial remote temperature sensor chips point out the parameter standards of temperature sensing transistors, the temperature sensing accuracy of the temperature sensing transistors selected based on the parameter standards of the temperature sensing transistors is difficult to reach within ±0.5℃ (-55℃~125℃). Summary of the invention

[0004] In order to solve at least one of the technical problems in the prior art, the present disclosure provides a method for determining a temperature-sensing transistor and a remote temperature sensing chip, which can improve the remote temperature sensing accuracy and meet the high-precision remote temperature sensing requirements.

[0005] An embodiment of the present disclosure provides a method for determining a temperature-sensitive transistor, including: using a bias current generating module to apply multiple bias currents to an initial temperature-sensitive transistor to obtain multiple bias voltages respectively generated by the initial temperature-sensitive transistor based on the multiple bias currents; based on the voltage difference between the multiple bias voltages, correcting the performance parameters of the initial temperature-sensitive transistor to obtain a parameter range of a target temperature-sensitive transistor; and based on the parameter range of the target temperature-sensitive transistor and the performance parameters of each of the multiple temperature-sensitive transistors, determining the target temperature-sensitive transistor from the multiple temperature-sensitive transistors.

[0006] According to some embodiments of the present disclosure, the performance parameters of the initial temperature-sensitive transistor are corrected based on the voltage difference between each of the multiple bias voltages to obtain the parameter range of the target temperature-sensitive transistor, including: establishing a correlation between the performance parameters of the initial temperature-sensitive transistor and the voltage difference between each of the multiple bias voltages based on the voltage difference between each of the multiple bias voltages; establishing a correlation between the error and the temperature sensing accuracy of the initial temperature-sensitive transistor based on the error introduced by the performance parameters of the initial temperature-sensitive transistor; correcting the performance parameters of the initial temperature-sensitive transistor based on the correlation between the performance parameters of the initial temperature-sensitive transistor and the voltage difference between each of the multiple bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature-sensitive transistor to obtain the parameter range of the target temperature-sensitive transistor.

[0007] According to some embodiments of the present disclosure, the performance parameters of the initial temperature-sensitive transistor include the reverse Early voltage of the initial temperature-sensitive transistor, multiple DC gain factors corresponding to the multiple bias currents, the saturation current and the base resistance.

[0008] According to some embodiments of the present disclosure, the correlation between the above error and the temperature sensing accuracy of the above initial temperature sensing transistor is expressed by the following formula: Where |ΔV BE，n -ΔV BE，ideal | is the above error, ΔT is the above temperature sensing accuracy, α is the gain factor, ΔV BE，ideal The ideal difference is an ideal difference without introducing the above error into the voltage difference between each of the above multiple bias voltages. The above ideal difference is expressed by the following formula: Wherein, k is the Boltzmann constant, q is the charge, T is the absolute temperature, and N is the ratio of the above multiple bias currents.

[0009] According to some embodiments of the present disclosure, based on the correlation between the performance parameters of the initial temperature-sensitive transistor and the voltage difference between each of the multiple bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature-sensitive transistor, the performance parameters of the initial temperature-sensitive transistor are corrected to obtain the parameter range of the target temperature-sensitive transistor, including: based on the correlation between the multiple DC amplification factors corresponding to the multiple bias currents and the voltage difference between each of the multiple bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature-sensitive transistor, the DC amplification factor of the initial temperature-sensitive transistor is corrected to obtain the parameter range of the DC amplification factor of the target temperature-sensitive transistor; based on the correlation between the base resistance and the voltage difference between each of the multiple bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature-sensitive transistor Based on the correlation between the error and the temperature sensing accuracy of the above-mentioned initial temperature-sensitive transistor, the base resistance of the above-mentioned initial temperature-sensitive transistor is corrected to obtain the parameter range of the base resistance of the above-mentioned target temperature-sensitive transistor; based on the correlation between the above-mentioned saturation current and the voltage difference between the above-mentioned multiple bias voltages and the correlation between the above-mentioned error and the temperature sensing accuracy of the above-mentioned initial temperature-sensitive transistor, the saturation current of the above-mentioned initial temperature-sensitive transistor is corrected to obtain the parameter range of the saturation current of the above-mentioned target temperature-sensitive transistor; based on the correlation between the above-mentioned reverse Early voltage and the voltage difference between the above-mentioned multiple bias voltages and the correlation between the above-mentioned error and the temperature sensing accuracy of the above-mentioned initial temperature-sensitive transistor, the reverse Early voltage of the above-mentioned initial temperature-sensitive transistor is corrected to obtain the parameter range of the reverse Early voltage of the above-mentioned target temperature-sensitive transistor.

[0010] According to some embodiments of the present disclosure, based on the correlation between the multiple DC amplification factors corresponding to the multiple bias currents and the voltage differences between the multiple bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature-sensing transistor, the DC amplification factor of the initial temperature-sensing transistor is corrected to obtain the parameter range of the DC amplification factor of the target temperature-sensing transistor, including: the parameter range of the DC amplification factor of the target temperature-sensing transistor is obtained by calculating the following formula: in, is the voltage difference between the above-mentioned multiple bias voltages represented by the error introduced by the multiple DC amplification factors corresponding to the above-mentioned multiple bias currents, and β1 is the voltage difference between the above-mentioned multiple bias voltages when the bias current is I bias The DC gain when β2 is the bias current NI bias The DC gain when I bias is the above bias current.

[0011] According to some embodiments of the present disclosure, based on the correlation between the base resistance and the voltage difference between each of the multiple bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature-sensitive transistor, the base resistance of the initial temperature-sensitive transistor is corrected to obtain the parameter range of the base resistance of the target temperature-sensitive transistor, including: calculating the parameter range of the base resistance of the target temperature-sensitive transistor by the following formula: Among them, R B is the base resistance mentioned above, is the above error.

[0012] According to some embodiments of the present disclosure, based on the correlation between the saturation current and the voltage difference between each of the multiple bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature sensing transistor, the saturation current of the initial temperature sensing transistor is corrected to obtain the parameter range of the saturation current of the target temperature sensing transistor, including: the parameter range of the saturation current of the target temperature sensing transistor is calculated by the following formula: I S =nI bias ;in, The voltage difference between the above-mentioned multiple bias voltages is represented by the error introduced by the above-mentioned saturation current, I s is the saturation current mentioned above.

[0013] According to some embodiments of the present disclosure, based on the correlation between the reverse Early voltage and the voltage difference between each of the plurality of bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature sensing transistor, the reverse Early voltage of the initial temperature sensing transistor is corrected to obtain the parameter range of the reverse Early voltage of the target temperature sensing transistor, including: obtaining the parameter range of the reverse Early voltage of the target temperature sensing transistor by calculating the following formula: Among them, V AR is the reverse Early voltage mentioned above, The error introduced by the reverse Early voltage is represented by the voltage difference between the plurality of bias voltages.

[0014] According to some embodiments of another aspect of the present disclosure, a remote temperature sensing chip is provided, including: a temperature-sensing transistor determined by using the above-mentioned method for determining the temperature-sensing transistor; a bias current generating module, connected to the above-mentioned temperature-sensing transistor, the above-mentioned bias current generating module is used to apply multiple bias currents to the above-mentioned temperature-sensing transistor to obtain multiple bias voltages generated by the above-mentioned temperature-sensing transistor based on the above-mentioned multiple bias currents; a digital processing module, used to generate and output a temperature value based on the voltage difference between each of the above-mentioned multiple bias voltages.

[0015] According to a method for determining a temperature-sensing transistor and a remote temperature sensing chip of an embodiment of the present disclosure, a bias current generating module is used to apply multiple bias currents to an initial temperature-sensing transistor to obtain multiple bias voltages respectively generated by the initial temperature-sensing transistor based on the multiple bias currents. Based on the voltage difference between the multiple bias voltages and the error introduced by the performance parameters of the initial temperature-sensing transistor, the performance parameters of the initial temperature-sensing transistor are corrected to obtain a parameter range of a target temperature-sensing transistor. Based on the parameter range of the target temperature-sensing transistor and the performance parameters of each of the multiple temperature-sensing transistors, a target temperature-sensing transistor is determined from the multiple temperature-sensing transistors. The target temperature-sensing transistor determined based on the corrected performance parameters can improve the remote temperature sensing accuracy and meet the high-precision remote temperature sensing requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 is a flow chart of a method for determining a temperature-sensitive transistor according to an illustrative embodiment of the present disclosure;

[0017] Figure 2 is a flow chart of determining a parameter range of a target temperature-sensing transistor based on a voltage difference between each of a plurality of bias voltages according to an exemplary embodiment of the present disclosure;

[0018] Figure 3 It is a flow chart for determining the parameter range of a target temperature-sensing transistor based on the correlation between the performance parameter of the initial temperature-sensing transistor and the voltage difference between each of a plurality of bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature-sensing transistor according to an exemplary embodiment of the present disclosure;

[0019] Figure 4 is a temperature sensing principle diagram of a remote temperature sensing chip according to an illustrative embodiment of the present disclosure; and

[0020] Figure 5 It is a block diagram of an electronic device suitable for implementing a method for determining a temperature-sensitive transistor according to an illustrative embodiment of the present disclosure. DETAILED DESCRIPTION

[0021] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the present disclosure. In the following detailed description, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, it is apparent that one or more embodiments may also be implemented without these specific details. In addition, in the following description, descriptions of known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.

[0022] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "comprise", "include", etc. used herein indicate the existence of the features, steps, operations and / or components, but do not exclude the existence or addition of one or more other features, steps, operations or components.

[0023] All terms (including technical and scientific terms) used herein have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification, and should not be interpreted in an idealized or overly rigid manner.

[0024] When using expressions such as "at least one of A, B, and C, etc.", they should generally be interpreted according to the meaning of the expression commonly understood by those skilled in the art (for example, "a system having at least one of A, B, and C" should include but is not limited to a system having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, C, etc.).

[0025] At present, most mainstream integrated circuit manufacturers and researchers are committed to the research of remote temperature sensor chips to improve the remote temperature sensing accuracy, but few have studied the temperature sensing transistor to improve the remote temperature sensing accuracy. Although most commercial remote temperature sensor chips point out the parameter standards of the temperature sensing transistor, the parameter standards do not meet the requirements of high-precision temperature sensing, at least causing an error of ±0.8℃ in the remote temperature sensing accuracy. Therefore, commercial remote temperature sensor chips give the recommended model of the temperature sensing transistor - 2N3906 / 3904. However, the remote temperature sensing accuracy of the remote temperature sensor chip using 2N3906 / 3904 is still difficult to reach within ±0.5℃ (-55℃~125℃). The parameter standards of the temperature sensing transistors recommended for commercial remote temperature sensor chips are as follows: (1) the forward bias voltage at the maximum expected temperature is greater than 0.25V at 6μA; (2) the forward bias voltage at the lowest expected temperature is less than 0.95V at 120μA; (3) the base resistance (R B) is less than 100Ω; (4) the DC amplification factor must satisfy 50<β<150. The remote temperature sensing accuracy of the temperature sensing transistor recommended for the above commercial remote temperature sensor chip is also difficult to reach within ±0.5℃ (-55℃~125℃). According to the inventive concept of one aspect of the present disclosure, the present disclosure is based on a temperature-sensing transistor, and inverts how non-ideal factors in the temperature-sensing transistor affect the remote temperature sensing accuracy. The present disclosure applies multiple bias currents to the initial temperature-sensing transistor by using a bias current generating module to obtain multiple bias voltages generated by the initial temperature-sensing transistor based on the multiple bias currents. Based on the voltage difference between the multiple bias voltages and the error introduced by the performance parameters of the initial temperature-sensing transistor, the performance parameters of the initial temperature-sensing transistor are corrected to obtain the parameter range of the target temperature-sensing transistor. Based on the parameter range of the target temperature-sensing transistor and the performance parameters of the multiple temperature-sensing transistors, a target temperature-sensing transistor is determined from the multiple temperature-sensing transistors. The target temperature-sensing transistor determined based on the corrected performance parameters can improve the remote temperature sensing accuracy and meet the high-precision remote temperature sensing requirements.

[0026] Figure 1 is a flow chart of a method for determining a temperature-sensitive transistor according to an exemplary embodiment of the present disclosure, Figure 4 It is a temperature sensing principle diagram of a remote temperature sensing chip according to an illustrative embodiment of the present disclosure.

[0027] According to the embodiments of the present disclosure, Figure 1 As shown, a method for determining a temperature-sensitive transistor includes the following steps S1-S3.

[0028] Step S1: applying multiple bias currents to the initial temperature-sensing transistor using a bias current generating module to obtain multiple bias voltages respectively generated by the initial temperature-sensing transistor based on the multiple bias currents.

[0029] According to an embodiment of the present disclosure, the initial temperature-sensing transistor is a temperature-sensing transistor without considering non-ideal factors.

[0030] According to an embodiment of the present disclosure, based on the base-emitter voltage V BE With collector current I C The exponential relationship between them is expressed by the following formula (1):

[0031]

[0032] Where k is the Boltzmann constant, q is the charge, T is the absolute temperature, I C is the collector current of the temperature sensing transistor, I S is the saturation current of the temperature sensing transistor.

[0033] According to the embodiments of the present disclosure, Figure 4 As shown, the bias current generating module 420 of the remote temperature sensing chip 400 applies two bias currents with a ratio of N:1 to the initial temperature sensing transistor, and the two bias voltages V generated by the two bias currents are respectively BE (Base-emitter voltage V BE ) to obtain the voltage difference ΔV BE (The difference between the two base-emitter voltages ΔV BE ), voltage difference ΔV BE It is expressed by the following formula (2):

[0034]

[0035] Where N is the bias current ratio.

[0036] According to the embodiment of the present disclosure, it can be seen from formula (2) that the voltage difference ΔV BE The remote temperature sensor chip 400 then uses the internal reference voltage V REF As a reference, the voltage difference ΔV BE The signal is digitized and normalized to obtain a temperature reading in degrees Celsius.

[0037] Step S2: Based on the voltage differences between the plurality of bias voltages, the performance parameters of the initial temperature-sensing transistor are corrected to obtain the parameter range of the target temperature-sensing transistor.

[0038] Step S3: based on the parameter range of the target temperature-sensing transistor and the performance parameters of each of the plurality of temperature-sensing transistors, determine the target temperature-sensing transistor from the plurality of temperature-sensing transistors.

[0039] According to an embodiment of the present disclosure, a bias current generating module is utilized to apply multiple bias currents to an initial temperature-sensing transistor, thereby obtaining multiple bias voltages respectively generated by the initial temperature-sensing transistor based on the multiple bias currents. Based on the voltage difference between the multiple bias voltages, the performance parameters of the initial temperature-sensing transistor are corrected to obtain the parameter range of the target temperature-sensing transistor. Based on the parameter range of the target temperature-sensing transistor and the performance parameters of each of the multiple temperature-sensing transistors, the target temperature-sensing transistor is determined from the multiple temperature-sensing transistors, thereby improving the remote temperature sensing accuracy and meeting the high-precision remote temperature sensing requirements.

[0040] Figure 2 The present invention is a flowchart of determining a parameter range of a target temperature-sensing transistor based on voltage differences between a plurality of bias voltages according to an exemplary embodiment of the present invention.

[0041] According to the embodiments of the present disclosure, Figure 2As shown, based on the voltage differences between the multiple bias voltages, the performance parameters of the initial temperature-sensing transistor are corrected to obtain the parameter range of the target temperature-sensing transistor, including the following steps S201-S203.

[0042] Step S201: establishing a correlation between the performance parameter of the initial temperature-sensing transistor and the voltage difference between the plurality of bias voltages based on the voltage difference between the plurality of bias voltages.

[0043] According to an embodiment of the present disclosure, the performance parameters of the initial temperature-sensitive transistor include a reverse Early voltage of the initial temperature-sensitive transistor, multiple DC amplification factors corresponding to multiple bias currents, a saturation current, and a base resistance.

[0044] According to the embodiment of the present disclosure, when the temperature sensing transistor is used as a remote temperature sensing device, the base of the temperature sensing transistor needs to be connected to the collector. If the bias voltage is set to zero, the concentration of a few holes on the side of the base region close to the collector will not be zero, which will lead to the ideal I C -V BE From formula (3) to formula (4):

[0045]

[0046]

[0047] Among them, I C ' is the actual collector current of the temperature-sensing transistor.

[0048] According to an embodiment of the present disclosure, based on the non-ideality of the saturation current, the voltage difference ΔV BE The first voltage difference ΔV BE1 It can be expressed by the following formula (5):

[0049]

[0050] Among them, I bias is the bias current applied by the bias current generating module to the temperature sensing transistor, and its value range is 5-10μA. N is the bias current ratio, and its value range is 3-16.

[0051] According to an embodiment of the present disclosure, at the first voltage difference ΔV BE1 Based on the Early effect of the temperature-sensitive transistor, the first voltage difference ΔV BE1 The second voltage difference ΔV BE2 It can be expressed by the following formula (6):

[0052]

[0053] Among them, β is the DC amplification factor of the temperature-sensitive transistor, V AR is the reverse Early voltage, V AF is the forward Early voltage, R B is the base resistance, R C is the collector resistance.

[0054] According to an embodiment of the present disclosure, at the second voltage difference ΔV BE2 Based on the base resistance of the temperature-sensitive transistor, the second voltage difference ΔV BE2 The third voltage difference ΔV BE3 It can be expressed by the following formula (7):

[0055]

[0056] According to the embodiment of the present disclosure, when the temperature sensing transistor is used as a remote temperature sensing device, the base of the temperature sensing transistor needs to be connected to the collector, wherein the emitter current (not the collector current) of the temperature sensing transistor is set by the current source, then when determining the bias voltage V BE The effect of base current must be considered. Therefore, the ratio of collector currents cannot be directly equivalent to a given ratio of emitter currents.

[0057] According to an embodiment of the present disclosure, at the third voltage difference ΔV BE3 Based on the DC magnification of the temperature-sensitive transistor, the third voltage difference ΔV BE3 The fourth voltage difference ΔV BE4 It can be expressed by the following formula (8):

[0058]

[0059] Where β1 is the bias current I bias The DC gain when β2 is the bias current NI bias The DC gain at .

[0060] According to the embodiment of the present disclosure, it can be seen from formula (8) that the DC amplification factor β and the forward Early voltage V AF , Reverse Early voltage V AR , base resistance R B , collector resistance R C and saturation current I S Will affect ΔV BE accuracy, and these influencing factors are coupled with each other.

[0061] According to the embodiment of the present disclosure, due to the forward Early voltage V AF The value is much larger than kT / q [8] , kT / (qVAF ) is e -4 Order of magnitude, formula (8) includes V AF The middle term of the influence is at least the e of the two preceding and following terms. -4 times, so V AF ΔV BE4 The error term caused can be ignored, that is, formula (8) can be simplified to formula (9):

[0062]

[0063] Where, ΔV BE5 is the fourth voltage difference ΔV BE4 Ignore V AF The fifth voltage difference value during the influence of .

[0064] Step S202: Based on the error introduced by the performance parameters of the initial temperature-sensing transistor, a correlation relationship between the error and the temperature sensing accuracy of the initial temperature-sensing transistor is established.

[0065] Step S203: Based on the correlation between the performance parameters of the initial temperature-sensing transistor and the voltage differences between the multiple bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature-sensing transistor, the performance parameters of the initial temperature-sensing transistor are corrected to obtain the parameter range of the target temperature-sensing transistor.

[0066] According to the embodiments of the present disclosure, based on the error introduced by the performance parameters of the initial temperature-sensing transistor, the bias voltage actually generated by the initial temperature-sensing transistor under the bias current deviates from the theoretical value, resulting in a decrease in the temperature sensing accuracy of the initial temperature-sensing transistor. By correcting the performance parameters of the initial temperature-sensing transistor and obtaining the parameter range of the target temperature-sensing transistor, the temperature sensing accuracy of the target temperature-sensing transistor can be achieved to ±0.1°C, thereby improving the temperature sensing accuracy.

[0067] According to an embodiment of the present disclosure, the correlation between the error and the temperature sensing accuracy of the initial temperature sensing transistor is expressed by the following formula (10):

[0068]

[0069] Where |ΔV BE，n -ΔV BE，ideal | is the error, ΔT is the temperature sensing accuracy, α is the gain factor, ΔV BE，ideal is an ideal difference without introducing an error into the voltage difference between each of the plurality of bias voltages. The ideal difference is expressed by the following formula (11):

[0070]

[0071] Where k is the Boltzmann constant, q is the charge, T is the absolute temperature, and N is the ratio of multiple bias currents.

[0072] According to an embodiment of the present disclosure, the gain factor α can be obtained by the following formula (12):

[0073]

[0074] Among them, the value of α is selected so that V BE With αΔV BE The temperature coefficients have equal magnitudes and opposite signs.

[0075] According to an embodiment of the present disclosure, the gain factor α can be expressed by the following formula (13):

[0076]

[0077] Figure 3 It is a flowchart for determining the parameter range of a target temperature-sensing transistor based on the correlation between the performance parameters of the initial temperature-sensing transistor and the voltage difference between multiple bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature-sensing transistor according to an illustrative embodiment of the present disclosure.

[0078] According to the embodiments of the present disclosure, Figure 3 As shown, based on the correlation between the performance parameters of the initial temperature-sensing transistor and the voltage difference between multiple bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature-sensing transistor, the performance parameters of the initial temperature-sensing transistor are corrected to obtain the parameter range of the target temperature-sensing transistor, including the following steps S2030-S2033.

[0079] Step S2030: Based on the correlation between the multiple DC amplification factors corresponding to the multiple bias currents and the voltage differences between the multiple bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature-sensing transistor, the DC amplification factor of the initial temperature-sensing transistor is corrected to obtain the parameter range of the DC amplification factor of the target temperature-sensing transistor.

[0080] According to the embodiment of the present disclosure, based on formula (9), the control variable method is adopted to consider the influence of the DC gain β alone, that is, assuming that the reverse Early voltage V AR The value is much larger than kT / q, and the saturation current I S Much smaller than the bias current I bias , ignoring the base resistance R B The influence of , that is, formula (9) can be simplified to formula (14):

[0081]

[0082] Where, ΔV BE6 is the fifth voltage difference ΔV BE5The sixth voltage difference when the influence of the DC amplification factor β is considered alone.

[0083] According to an embodiment of the present disclosure, based on the correlation between the multiple DC amplification factors corresponding to the multiple bias currents and the voltage difference between the multiple bias voltages (Formula (14)) and the correlation between the error and the temperature sensing accuracy of the initial temperature-sensing transistor (Formula (10)), the DC amplification factor of the initial temperature-sensing transistor is corrected, and the parameter range of the DC amplification factor of the target temperature-sensing transistor is obtained, including: the parameter range of the DC amplification factor of the target temperature-sensing transistor is calculated by the following formula (15):

[0084]

[0085] in, is the voltage difference between the multiple bias voltages represented by the errors introduced by the multiple DC magnifications corresponding to the multiple bias currents, and β1 is the voltage difference between the multiple bias voltages represented by the errors introduced by the multiple DC magnifications corresponding to the multiple bias currents, and β2 is the voltage difference between the multiple bias voltages represented by the errors introduced by the multiple DC magnifications corresponding to the multiple bias currents, and β3 is the voltage difference between the multiple bias voltages represented by the errors introduced by the multiple DC magnification bias The DC gain when β2 is the bias current NI bias The DC gain when I bias is the bias current.

[0086] According to an embodiment of the present disclosure, if I bias with NI bias The greater the change in DC gain under the bias current (β2-β1), the more I bias The larger the DC gain β1 under the bias current, the smaller the impact on the temperature sensing accuracy. Usually, the DC gain of the temperature sensing transistor varies within 5μA to 160μA within 5, taking β2-β1=5, ΔT=0.1℃, and N as 3. It can be deduced that when the DC gain β is greater than 100, the impact on the remote temperature sensing accuracy is less than ±0.1℃.

[0087] According to the embodiment of the present disclosure, the influence of the recommended standard of commercial chips (50<β<150) on the temperature sensing accuracy is compared and analyzed based on formula (15): β>50 is substituted into formula (15), and the temperature sensing error caused is calculated as ±0.32°C according to the variation range of β under different bias currents of 5. Compared with the recommended standard (50<β<150), the parameter range obtained by the present disclosure after correcting the DC amplification factor β of the temperature sensing transistor better meets the high-precision temperature sensing requirements.

[0088] Step S2031: Based on the correlation between the base resistance and the voltage difference between the multiple bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature sensing transistor, the base resistance of the initial temperature sensing transistor is corrected to obtain the parameter range of the base resistance of the target temperature sensing transistor.

[0089] According to the embodiment of the present disclosure, based on formula (9), the control variable method is adopted to consider the base resistance R B The influence of , formula (9) can be simplified to formula (16):

[0090]

[0091] Where, ΔV BE7 is the fifth voltage difference ΔV BE5 Considering the base resistance R B The seventh voltage difference during the influence of .

[0092] According to an embodiment of the present disclosure, based on the correlation between the base resistance and the voltage difference between each of the plurality of bias voltages (formula (16)) and the correlation between the error and the temperature sensing accuracy of the initial temperature-sensitive transistor (formula (10)), the base resistance of the initial temperature-sensitive transistor is corrected, and the parameter range of the base resistance of the target temperature-sensitive transistor is obtained, including: the parameter range of the base resistance of the target temperature-sensitive transistor is calculated by the following formula (17):

[0093]

[0094] Among them, R B is the base resistance, For error.

[0095] According to an embodiment of the present disclosure, the base resistance R B It can be expressed by the following formula (18):

[0096]

[0097] According to an embodiment of the present disclosure, take I bias is 10μA, N is 16, and the base resistance R B When the influence on the remote temperature sensing accuracy is less than ±0.1℃, the base resistance R B Must be less than 20.

[0098] According to the embodiment of the present disclosure, based on formula (17), the recommended standard of commercial chips (R B <100) on the temperature sensing accuracy: B Substituting <100 into formula (17), it is calculated that the temperature sensing error caused is at least ±0.27℃. B <100), the base resistance R of the temperature-sensitive transistor disclosed in the present invention B The parameter range obtained after correction can better meet the needs of high-precision temperature sensing.

[0099] Step S2032: Based on the correlation between the saturation current and the voltage difference between the multiple bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature sensing transistor, the saturation current of the initial temperature sensing transistor is corrected to obtain the parameter range of the saturation current of the target temperature sensing transistor.

[0100] According to the embodiment of the present disclosure, based on formula (9), the control variable method is adopted to consider the saturation current I S The influence of , formula (9) can be simplified to formula (19):

[0101]

[0102] Where, ΔV BE8 is the fifth voltage difference ΔV BE5 Considering the saturation current I S The eighth voltage difference value during the influence of .

[0103] According to an embodiment of the present disclosure, based on the correlation between the saturation current and the voltage difference between each of the plurality of bias voltages (Formula (19)) and the correlation between the error and the temperature sensing accuracy of the initial temperature sensing transistor (Formula (10)), the saturation current of the initial temperature sensing transistor is corrected, and the parameter range of the saturation current of the target temperature sensing transistor is obtained, including: the parameter range of the saturation current of the target temperature sensing transistor is calculated by the following formula (20):

[0104]

[0105] According to an embodiment of the present disclosure, assuming that the saturation current I s It is n times smaller than the bias current and can be expressed by the following formula (21):

[0106] I S =nI bias (twenty one)

[0107] in, The voltage difference between multiple bias voltages represents the error introduced by the saturation current, I s is the saturation current.

[0108] According to the embodiment of the present disclosure, due to the saturation current I S At high temperatures, it increases exponentially with temperature. If the saturation current I S The impact on the temperature sensing accuracy is less than ±0.1°C in the full temperature range (-55°C to 125°C), so the impact of the saturation current Is on the remote temperature sensing accuracy at 125°C must be less than ±0.1°C. Therefore, T = 398K (t = 125°C) is taken, and the saturation current Is at 125°C must be less than 0.0006 times the bias current I bias .

[0109] According to the embodiment of the present disclosure, based on formula (20), the influence of the recommended standard of commercial chips (the forward bias voltage at the maximum expected temperature is greater than 0.25V at 6μA, and the forward bias voltage at the minimum expected temperature is less than 0.95V at 120μA) on the temperature sensing accuracy is compared and analyzed: It is calculated by formula (1) that the recommended index has an influence on the saturation current I S The constraint range is 10 -21 μA S <0.0066μA, which means that the saturation current at high temperature is less than 0.0013 times I bias (I bias Take 5μA), I S =0.0013I bias Substituting into formula (20), it is calculated that the temperature sensing error is ±0.21°C. Compared with the recommended standard (the forward bias voltage at the maximum expected temperature is greater than 0.25V at 6μA, and the forward bias voltage at the minimum expected temperature is less than 0.95V at 120μA), the saturation current I of the temperature sensing transistor disclosed in the present invention is S The parameter range obtained after correction is clearer and better meets the needs of high-precision temperature sensing.

[0110] Step S2033: Based on the correlation between the reverse Early voltage and the voltage difference between multiple bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature-sensing transistor, the reverse Early voltage of the initial temperature-sensing transistor is corrected to obtain the parameter range of the reverse Early voltage of the target temperature-sensing transistor.

[0111] According to an embodiment of the present disclosure, based on formula (9), the control variable method is adopted to consider the reverse Early voltage V AR The influence of , formula (9) can be simplified to formula (22):

[0112]

[0113] Where, ΔV BE9 is the fifth voltage difference ΔV BE5 Considering the reverse Early voltage V AR The ninth voltage difference during the influence of .

[0114] According to an embodiment of the present disclosure, based on the correlation between the reverse Early voltage and the voltage difference between each of the plurality of bias voltages (Formula (22)) and the correlation between the error and the temperature sensing accuracy of the initial temperature sensing transistor (Formula (10)), the reverse Early voltage of the initial temperature sensing transistor is corrected, and the parameter range of the reverse Early voltage of the target temperature sensing transistor is obtained, including: the parameter range of the reverse Early voltage of the target temperature sensing transistor is calculated by the following formula (23): ​

[0115]

[0116] Among them, V AR is the reverse Early voltage, The error introduced by the reverse Early voltage represents the voltage difference between the multiple bias voltages.

[0117] According to the embodiment of the present disclosure, taking T = 398K (t = 125°C), the reverse Early voltage V is calculated. AR The recommended specification does not include the reverse Early voltage V AR Make constraints.

[0118] According to the embodiment of the present disclosure, the present disclosure takes the temperature sensing accuracy of 0.1°C as the target, corrects the performance parameters of the initial temperature sensing transistor, and obtains the parameter range of the target temperature sensing transistor as shown in the following Table 1:

[0119] Table 1 Parameter range of target temperature-sensing transistor obtained by the present disclosure

[0120] DC gain (β) Greater than 100 <![CDATA[Base resistance (R B )]]> Less than 20Ω <![CDATA[Saturation current (I S )]]> <![CDATA[Less than 0.0006I bias (at 125 °C)]]> <![CDATA[Reverse Early voltage (V AR )]]> Greater than 34.5V

[0121] According to the embodiments of the present disclosure, the commercial chip recommends a temperature-sensing transistor standard that causes at least an error of ±0.8°C in the remote temperature sensing accuracy, while the parameter range of the target temperature-sensing transistor proposed in the present disclosure has clearer constraints on various indicators, and various performance parameters are corrected strictly in accordance with the remote temperature sensing accuracy error of ±0.1°C, which can meet the requirements of high-precision remote temperature sensing.

[0122] Figure 4 It is a temperature sensing principle diagram of a remote temperature sensing chip according to an illustrative embodiment of the present disclosure.

[0123] According to another aspect of the present disclosure, Figure 4 As shown, a remote temperature sensor chip 400 includes a temperature sensing transistor 410 determined by the above-mentioned temperature sensing transistor determination method, a bias current generating module 420 and a digital processing module 430. The bias current generating module 420 is connected to the temperature sensing transistor 410, and the bias current generating module 420 is used to apply multiple bias currents to the temperature sensing transistor 410 to obtain multiple bias voltages generated by the temperature sensing transistor 410 based on the multiple bias currents. The digital processing module 430 is used to generate and output a temperature value based on the voltage difference between the multiple bias voltages.

[0124] According to the embodiments of the present disclosure, the design of a crystal transistor requires complete electrical performance indicators, and therefore a method for converting transistor parameter standards to electrical performance indicators is proposed to map the parameter range of a target temperature-sensing transistor to electrical performance indicators.

[0125] According to the embodiments of the present disclosure, when the triode is used as a remote temperature sensor, the change of the DC gain β will affect the temperature sensing accuracy. Based on Table 1, in order to reduce this influence to within ±0.1°C, the DC gain β should be greater than 100 within the bias current variation range (5μA~160μA), and at the same time, certain restrictions are imposed on its variation. Therefore, the DC gain β is 100±5.

[0126] According to the embodiment of the present disclosure, the base-emitter saturation voltage V BE(sat) It can be expressed by the following formula (24):

[0127] V BE(sat) =V je +I B R B +I E R E (twenty four)

[0128] Among them, V je is the voltage drop of the emitter itself, which is about 0.6V~0.8V, I B is the base current, I E is the emitter current, R E is the emitter parasitic resistance, R E Much smaller than the base resistance R B , R E The pressure drop caused can be ignored, which can be expressed by the following formula (25):

[0129] V BE(sat) ≈V je +I B R B (25).

[0130] According to the embodiment of the present disclosure, the base-emitter saturation voltage V BE(sat) The value of the base resistance R B Based on Table 1, R B Need to be less than 20, then the base-emitter saturation voltage V BE(sat) The value range is 0.6+20I B ~0.8+20I B (V).

[0131] According to an embodiment of the present disclosure, the saturation current I S It can be expressed as the current size formed by the electrons injected into the base region by the emitter diffusing in the base region when the base region and the emitter are short-circuited (NPN tube), which belongs to the reverse current I CES The reverse current I CESIt is defined as the reverse current between the collector and the emitter when the emitter and the base are short-circuited. It is the current formed by the electrons injected from the emitter into the base region and the reverse current I formed by the electrons injected from the emitter into the base region. CBO Composition, saturation current I S It can be approximately expressed by the following formula (26):

[0132] I S ≈I CES -I CBO (26).

[0133] According to the embodiment of the present disclosure, the transistor electrical performance index can be defined as follows: CES and I CBO The size of the saturation current I S Based on Table 1, I S <0.0006I bias (at 125°C), I bias The value range is 5μA~10μA, (I CES -I CBO ) value range is 3nA~6nA.

[0134] According to the embodiment of the present disclosure, when the collector-base voltage V BC When it is set to zero, the DC gain β can be approximately expressed by the following formula (27):

[0135]

[0136] Among them, β′0 is the DC gain of the transistor when the Early effect is not considered. AR The limit is converted into the limit of DC amplification factor β in the triode electrical performance index. Based on Table 1, β′0 is 100, V AR Need to be greater than 34.5V, when V BE When the voltage is 5V, β should be less than 116 after considering the Early effect. BE When the voltage is 10V, β needs to be less than 140 after considering the Early effect.

[0137] According to the embodiment of the present disclosure, after the conversion of the DC amplification factor β, the base resistance R B The conversion, saturation current I S The conversion and reverse Early voltage V AR The conversion of the determined transistor electrical performance index for remote temperature sensing is shown in Table 2 below. By designing the transistor according to the electrical performance index, a high-precision temperature sensing transistor can be designed. CB is the transistor collector-base voltage, V CE is the transistor collector-emitter voltage.

[0138] Table 2 Electrical performance indicators of transistors specifically used for remote temperature sensing

[0139]

[0140]

[0141] According to an embodiment of the present disclosure, based on a method for converting a parameter range of a target temperature-sensing transistor into an electrical performance index, the parameter range can be further mapped to the transistor electrical performance index to guide the design of a high-precision remote temperature-sensing transistor.

[0142] According to the embodiments of the present disclosure, the design method of the high-precision temperature-sensing transistor can be based on any accuracy requirement (for example, ±0.1°C, ±0.05°C, ±0.01°C, etc.), and the parameter range of the high-precision remote temperature-sensing transistor under different temperature sensing accuracy requirements can be obtained based on formula (9). The method of converting the proposed parameter range into electrical performance indicators can be used to guide the design of high-precision temperature-sensing transistors that meet different temperature sensing accuracy requirements.

[0143] Figure 5 It is a block diagram of an electronic device suitable for implementing a method for determining a temperature-sensitive transistor according to an illustrative embodiment of the present disclosure. Figure 5 The electronic device shown is only an example and should not bring any limitation to the functions and scope of use of the embodiments of the present disclosure.

[0144] like Figure 5 As shown, the electronic device 500 according to an embodiment of the present disclosure includes a processor 501, which can perform various appropriate actions and processes according to a program stored in a read-only memory (ROM) 502 or a program loaded from a storage part 508 into a random access memory (RAM) 503. The processor 501 may include, for example, a general-purpose microprocessor (e.g., a CPU), an instruction set processor and / or a related chipset and / or a special-purpose microprocessor (e.g., an application-specific integrated circuit (ASIC)), etc. The processor 501 may also include an onboard memory for caching purposes. The processor 501 may include a single processing unit or multiple processing units for performing different actions of the method flow according to an embodiment of the present disclosure.

[0145] In RAM503, various programs and data required for the operation of electronic device 500 are stored. Processor 501, ROM502 and RAM 503 are connected to each other through bus 504. Processor 501 performs various operations of the method flow according to the embodiment of the present disclosure by executing the program in ROM502 and / or RAM 503. It should be noted that the program can also be stored in one or more memories other than ROM502 and RAM503. Processor 501 can also perform various operations of the method flow according to the embodiment of the present disclosure by executing the program stored in the one or more memories.

[0146] According to an embodiment of the present disclosure, the electronic device 500 may further include an input / output (I / O) interface 505, which is also connected to the bus 504. The electronic device 500 may further include one or more of the following components connected to the input / output (I / O) interface 505: an input portion 506 including a keyboard, a mouse, etc.; an output portion 507 including a cathode ray tube (CRT), a liquid crystal display (LCD), etc., and a speaker, etc.; a storage portion 508 including a hard disk, etc.; and a communication portion 509 including a network interface card such as a LAN card, a modem, etc. The communication portion 509 performs communication processing via a network such as the Internet. A drive 510 is also connected to the input / output (I / O) interface 505 as needed. A removable medium 511, such as a magnetic disk, an optical disk, a magneto-optical disk, a semiconductor memory, etc., is installed on the drive 510 as needed, so that a computer program read therefrom is installed into the storage portion 508 as needed.

[0147] The present disclosure also provides a computer-readable storage medium, which may be included in the device / apparatus / system described in the above embodiments; or may exist independently without being assembled into the device / apparatus / system. The above computer-readable storage medium carries one or more programs, and when the above one or more programs are executed, the method according to the embodiment of the present disclosure is implemented.

[0148] According to an embodiment of the present disclosure, a computer-readable storage medium may be a non-volatile computer-readable storage medium, for example, may include but is not limited to: a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In the present disclosure, a computer-readable storage medium may be any tangible medium containing or storing a program, which may be used by or in combination with an instruction execution system, an apparatus or a device. For example, according to an embodiment of the present disclosure, a computer-readable storage medium may include the ROM 502 and / or RAM 503 described above and / or one or more memories other than ROM 502 and RAM 503.

[0149] The embodiment of the present disclosure also includes a computer program product, which includes a computer program, and the computer program contains program code for executing the method shown in the flowchart. When the computer program product is run in a computer system, the program code is used to enable the computer system to implement the method provided by the embodiment of the present disclosure.

[0150] The above functions defined in the system / device of the embodiment of the present disclosure are performed when the computer program is executed by the processor 501. According to the embodiment of the present disclosure, the system, device, module, unit, etc. described above can be implemented by a computer program module.

[0151] In one embodiment, the computer program may rely on tangible storage media such as optical storage devices, magnetic storage devices, etc. In another embodiment, the computer program may also be transmitted and distributed in the form of signals on a network medium, and downloaded and installed through the communication part 509, and / or installed from the removable medium 511. The program code contained in the computer program may be transmitted using any appropriate network medium, including but not limited to: wireless, wired, etc., or any suitable combination of the above.

[0152] In such an embodiment, the computer program can be downloaded and installed from the network through the communication part 509, and / or installed from the removable medium 511. When the computer program is executed by the processor 501, the above functions defined in the system of the embodiment of the present disclosure are performed. According to the embodiment of the present disclosure, the system, device, means, module, unit, etc. described above can be implemented by a computer program module.

[0153] According to an embodiment of the present disclosure, the program code for executing the computer program provided by the embodiment of the present disclosure can be written in any combination of one or more programming languages. Specifically, these computing programs can be implemented using high-level process and / or object-oriented programming languages, and / or assembly / machine languages. Programming languages ​​include, but are not limited to, Java, C++, python, "C" language or similar programming languages. The program code can be executed entirely on the user computing device, partially on the user device, partially on the remote computing device, or entirely on the remote computing device or server. In the case of a remote computing device, the remote computing device can be connected to the user computing device through any type of network, including a local area network (LAN) or a wide area network (WAN), or can be connected to an external computing device (for example, using an Internet service provider to connect through the Internet).

[0154] The flow charts and block diagrams in the accompanying drawings illustrate the possible architecture, functions and operations of the systems, methods and computer program products according to various embodiments of the present disclosure. In this regard, each box in the flow chart or block diagram can represent a module, a program segment, or a part of a code, and the above-mentioned module, program segment, or a part of a code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in a different order from the order marked in the accompanying drawings. For example, two boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram or flow chart, and the combination of the boxes in the block diagram or flow chart can be implemented with a dedicated hardware-based system that performs a specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.

[0155] It should also be noted that the directional terms mentioned in the embodiments, such as "upper", "lower", "front", "back", "left", "right", etc., are only reference directions of the drawings and are not intended to limit the scope of protection of the present disclosure. Throughout the drawings, the same elements are represented by the same or similar reference numerals. Conventional structures or configurations will be omitted when they may cause confusion in the understanding of the present disclosure, and the shapes and sizes of the components in the drawings do not reflect the actual size and proportion, but only illustrate the contents of the embodiments of the present disclosure.

[0156] Unless otherwise indicated, the numerical parameters in this specification and the appended claims are approximate values ​​and can vary according to the desired properties obtained through the content of the present disclosure. Specifically, all numbers used in the specification and claims to express the content of the composition, reaction conditions, etc., should be understood to be modified by the term "about" in all cases. In general, the meaning of the expression is to include a variation of ±10% in some embodiments, ±5% in some embodiments, ±1% in some embodiments, and ±0.5% in some embodiments by a specific number.

[0157] The ordinal numbers used in the specification and claims, such as "first", "second", "third", etc., to modify the corresponding elements, do not themselves mean that the elements have any ordinal numbers, nor do they represent the order of one element and another element, or the order in the manufacturing method. The use of these ordinal numbers is only used to clearly distinguish a component with a certain name from another component with the same name.

[0158] In addition, unless the steps are specifically described or must occur in sequence, the order of the above steps is not limited to the above list, and can be changed or rearranged according to the required design. And the above embodiments can be mixed and matched with each other or with other embodiments based on design and reliability considerations, that is, the technical features in different embodiments can be freely combined to form more embodiments.

[0159] The embodiments of the present disclosure are described above. However, these embodiments are only for illustrative purposes and are not intended to limit the scope of the present disclosure. Although the embodiments are described above separately, this does not mean that the measures in the various embodiments cannot be used in combination to advantage. The scope of the present disclosure is defined by the attached claims and their equivalents. Without departing from the scope of the present disclosure, those skilled in the art may make a variety of substitutions and modifications, which should all fall within the scope of the present disclosure.

Claims

1. A method for determining a temperature-sensitive transistor, comprising: Applying multiple bias currents to the initial temperature-sensing triode using a bias current generating module to obtain multiple bias voltages respectively generated by the initial temperature-sensing triode based on the multiple bias currents; Based on the voltage differences between the plurality of bias voltages, the performance parameters of the initial temperature-sensing transistor are corrected to obtain a parameter range of the target temperature-sensing transistor; as well as Based on the parameter range of the target temperature-sensing transistor and the performance parameters of each of the plurality of temperature-sensing transistors, the target temperature-sensing transistor is determined from the plurality of temperature-sensing transistors.

2. The method for determining a temperature-sensitive transistor according to claim 1, wherein: Based on the voltage difference between each of the plurality of bias voltages, the performance parameters of the initial temperature-sensing transistor are corrected to obtain the parameter range of the target temperature-sensing transistor, which includes: Based on the voltage differences between the plurality of bias voltages, establishing a correlation between the performance parameter of the initial temperature-sensing transistor and the voltage differences between the plurality of bias voltages; Based on the error introduced by the performance parameter of the initial temperature-sensing transistor, establishing a correlation relationship between the error and the temperature sensing accuracy of the initial temperature-sensing transistor; Based on the correlation between the performance parameters of the initial temperature-sensing transistor and the voltage difference between each of the multiple bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature-sensing transistor, the performance parameters of the initial temperature-sensing transistor are corrected to obtain the parameter range of the target temperature-sensing transistor.

3. The method for determining the temperature-sensitive transistor according to claim 2, wherein: The performance parameters of the initial temperature-sensitive transistor include a reverse Early voltage of the initial temperature-sensitive transistor, a plurality of direct current amplification factors respectively corresponding to the plurality of bias currents, a saturation current and a base resistance.

4. The method for determining the temperature-sensitive transistor according to claim 3, wherein: The correlation between the error and the temperature sensing accuracy of the initial temperature sensing transistor is expressed by the following formula: Where |ΔV BE，n -ΔV BE，ideal | is the error, ΔT is the temperature sensing accuracy, α is the gain factor, ΔV BE，ideal is an ideal difference without introducing the error into the voltage difference between each of the plurality of bias voltages, and the ideal difference is expressed by the following formula: Wherein, k is the Boltzmann constant, q is the charge, T is the absolute temperature, and N is the ratio of the multiple bias currents.

5. The method for determining the temperature-sensitive transistor according to claim 4, wherein: Based on the correlation between the performance parameter of the initial temperature-sensing transistor and the voltage difference between each of the plurality of bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature-sensing transistor, the performance parameter of the initial temperature-sensing transistor is corrected to obtain the parameter range of the target temperature-sensing transistor including: Based on the correlation between the multiple DC amplification factors corresponding to the multiple bias currents and the voltage differences between the multiple bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature-sensing transistor, the DC amplification factor of the initial temperature-sensing transistor is corrected to obtain a parameter range of the DC amplification factor of the target temperature-sensing transistor; Based on the correlation between the base resistance and the voltage difference between each of the plurality of bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature sensing transistor, the base resistance of the initial temperature sensing transistor is corrected to obtain a parameter range of the base resistance of the target temperature sensing transistor; Based on the correlation between the saturation current and the voltage difference between each of the plurality of bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature sensing transistor, the saturation current of the initial temperature sensing transistor is corrected to obtain a parameter range of the saturation current of the target temperature sensing transistor; Based on the correlation between the reverse Early voltage and the voltage difference between each of the multiple bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature-sensitive transistor, the reverse Early voltage of the initial temperature-sensitive transistor is corrected to obtain the parameter range of the reverse Early voltage of the target temperature-sensitive transistor.

6. The method for determining the temperature-sensitive transistor according to claim 5, wherein: The DC amplification factor of the initial temperature-sensing transistor is corrected based on the correlation relationship between the multiple DC amplification factors corresponding to the multiple bias currents and the voltage difference between the multiple bias voltages and the correlation relationship between the error and the temperature sensing accuracy of the initial temperature-sensing transistor, and the parameter range of the DC amplification factor of the target temperature-sensing transistor is obtained, including: The parameter range of the DC amplification factor of the target temperature sensing transistor is calculated by the following formula: in, is the voltage difference between the plurality of bias voltages represented by the error introduced by the plurality of DC amplification factors corresponding to the plurality of bias currents, and β1 is the voltage difference between the plurality of bias voltages represented by the error introduced by the plurality of DC amplification factors corresponding to the plurality of bias currents, and β2 is the voltage difference between the plurality of bias voltages represented by the error introduced by the plurality of DC amplification factors corresponding to the plurality of bias currents, and β3 is the voltage difference between the plurality of bias voltages represented by bias The DC gain when β2 is the bias current NI bias The DC gain when I bias is the bias current.

7. The method for determining the temperature-sensitive transistor according to claim 5, wherein: Based on the correlation between the base resistance and the voltage difference between each of the plurality of bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature sensing transistor, the base resistance of the initial temperature sensing transistor is corrected to obtain a parameter range of the base resistance of the target temperature sensing transistor, including: The parameter range of the base resistance of the target temperature-sensing transistor is calculated by the following formula: Among them, R B is the base resistance, is the error.

8. The method for determining the temperature-sensitive transistor according to claim 5, wherein: Based on the correlation between the saturation current and the voltage difference between each of the plurality of bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature sensing transistor, the saturation current of the initial temperature sensing transistor is corrected to obtain a parameter range of the saturation current of the target temperature sensing transistor, including: The parameter range of the saturation current of the target temperature sensing transistor is calculated by the following formula: I S = nI bias ; in, The voltage difference between the plurality of bias voltages represented by the error introduced by the saturation current, I s is the saturation current.

9. The method for determining a temperature-sensitive transistor according to claim 5, wherein: Based on the correlation between the reverse Early voltage and the voltage difference between each of the plurality of bias voltages and the correlation between the error and the temperature sensing accuracy of the initial temperature sensing transistor, the reverse Early voltage of the initial temperature sensing transistor is corrected to obtain a parameter range of the reverse Early voltage of the target temperature sensing transistor, including: The parameter range of the reverse Early voltage of the target temperature-sensing transistor is calculated by the following formula: Among them, V AR is the reverse Early voltage, The voltage difference between each of the plurality of bias voltages is represented by an error introduced by the reverse Early voltage.

10. A remote temperature sensor chip, comprising: The temperature-sensitive transistor is determined by using the method for determining the temperature-sensitive transistor according to any one of claims 1 to 9; A bias current generating module is connected to the temperature-sensing triode, and is used for applying multiple bias currents to the temperature-sensing triode to obtain multiple bias voltages respectively generated by the temperature-sensing triode based on the multiple bias currents; The digital processing module is used to generate and output a temperature value based on the voltage difference between each of the plurality of bias voltages.

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