Ion beam detecting device and ion beam detecting method, ion implantation apparatus

Abstract

The application relates to an ion beam detection device and method, and an ion implantation device. The ion beam detection device comprises an ion beam deflection unit, a first Faraday detection unit and a processing unit. The ion beam deflection unit has an ion beam transmission channel for controlling the ion beam in the ion beam transmission channel to exit along a target direction. The first Faraday detection unit is located on one side of the ion beam deflection unit, is used for reciprocating motion along a second direction, and is used for acquiring a first ion beam waveform in at least one detection period when the target direction is the same as a first direction and a second ion beam waveform in at least one detection period when the target direction is deflected relative to the first direction. The processing unit is connected with the first Faraday detection unit and is configured to compare waveform differences between the first ion beam waveform and the second ion beam waveform, and to determine the real implantation energy of the ion beam according to the waveform differences. The application is used for accurately measuring the real implantation energy of the ion beam.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to an ion beam detection device and an ion beam detection method, and ion implantation equipment. Background Art

[0002] Ion implantation is a crucial step in semiconductor manufacturing, directly determining the device's electrical conductivity and performance. The three most critical parameters in ion implantation are the ion beam dose, the ion beam angle, and the ion beam energy. However, the ion beam energy directly affects the implantation depth. Summary of the Invention

[0003] Based on this, the embodiments of the present application provide an ion beam detection device, an ion beam detection method, and an ion implantation device, which can accurately measure the actual implantation energy of the ion beam to ensure that the actual implantation energy of the ion beam is within the acceptable range of the process, thereby helping to improve product yield. At the same time, it has strong applicability and scalability and can be widely used in various ion implantation processes.

[0004] In order to achieve the above-mentioned purpose, on the one hand, some embodiments of the present application provide an ion beam detection device, including an ion beam deflection unit, a first Faraday detection unit and a processing unit. The ion beam deflection unit has an ion beam transmission channel for controlling the ion beam in the ion beam transmission channel to be emitted along a target direction. The ion beam transmission channel extends along a first direction, and the target direction is the same as the first direction or deflected relative to the first direction. The first Faraday detection unit is located on one side of the ion beam emitted by the ion beam deflection unit, and is used to reciprocate along a second direction, and obtain a first ion beam waveform within at least one detection cycle when the target direction is the same as the first direction, and a second ion beam waveform within at least one detection cycle when the target direction is deflected relative to the first direction. The second direction intersects with the first direction. The processing unit is connected to the first Faraday detection unit and is configured to: compare the waveform difference between the first ion beam waveform and the second ion beam waveform to determine the actual injection energy of the ion beam based on the waveform difference.

[0005] In some embodiments of the present application, an ion beam deflection unit includes a cavity and a wire winding. The cavity has an ion beam transmission channel extending in a horn shape along a first direction. The wire winding is insulated and wound around the outer wall of the cavity, and is configured to generate a magnetic field in the ion beam transmission channel when energized.

[0006] In some embodiments of the present application, the first Faraday detection unit includes a first Faraday sensor and a drive mechanism. The first Faraday sensor has a slit facing the ion beam deflection unit. The drive mechanism is connected to the first Faraday sensor and is configured to drive the first Faraday sensor to reciprocate in the second direction.

[0007] In some embodiments of the present application, the first Faraday detection unit further includes an encoder connected to the driving mechanism and / or the first Faraday sensor and configured to record the movement position of the first Faraday sensor.

[0008] In some embodiments of the present application, the ion beam detection apparatus further includes a second Faraday detection unit. The second Faraday detection unit includes a horizontal detection unit and a vertical detection unit, respectively located on two adjacent sides of the target wafer. The horizontal detection unit is configured to obtain the rotational position of the vertical detection unit and the corresponding third ion beam waveform when the vertical detection unit rotates up and down along the second direction for at least one detection cycle. The vertical detection unit is configured to obtain the rotational position of the horizontal detection unit and the corresponding fourth ion beam waveform when the horizontal detection unit rotates left and right along the first direction for at least one detection cycle.

[0009] Correspondingly, the processing unit is also connected to the second Faraday detection unit and is configured to: analyze whether the third ion beam waveform and / or the fourth ion beam waveform has a reversal point, so as to determine the actual deflection angle of the ion beam relative to the target wafer in response to the rotation position corresponding to the reversal point.

[0010] In some embodiments of the present application, the vertical detection unit rotates up and down along the second direction within a detection period within a range of -60° to +90°. The horizontal detection unit rotates left and right along the first direction within a detection period within a range of -90° to +90°.

[0011] On the other hand, the present application also provides an ion beam detection method according to some embodiments, which is applied to the ion beam detection device in the above embodiment. The ion beam detection method includes the following steps.

[0012] Acquire a first ion beam waveform within at least one detection cycle; the first ion beam waveform is an ion beam waveform acquired when the first Faraday detection unit reciprocates along the second direction when the ion beam deflection unit controls the ion beam in the ion beam transmission channel to be emitted along the first direction; the first direction is the extension direction of the ion beam transmission channel.

[0013] Acquire a second ion beam waveform within at least one detection cycle; the second ion beam waveform is the ion beam waveform obtained by the first Faraday detection unit reciprocating along the second direction when the ion beam in the ion beam transmission channel is deflected relative to the first direction and then emitted.

[0014] A waveform difference between the first ion beam waveform and the second ion beam waveform is determined.

[0015] The actual implantation energy of the ion beam is determined based on the waveform difference.

[0016] In some embodiments of the present application, determining the real injection energy of the ion beam according to the waveform difference comprises: if the first ion beam waveform and the second ion beam waveform are relatively translated and the waveform difference between the two is less than or equal to a first target threshold, the real injection energy of the ion beam meets the process target; if the first ion beam waveform and the second ion beam waveform are relatively translated and the waveform difference between the two is greater than a second target threshold, the real injection energy of the ion beam does not meet the process target, and an ion beam energy adjustment signal is output.

[0017] In some embodiments of the present application, the ion beam detection method further comprises the following steps.

[0018] The rotation position of the vertical detection unit and the corresponding third ion beam waveform in at least one detection period are obtained; the third ion beam waveform is the ion beam waveform obtained by the horizontal detection unit when the vertical detection unit rotates up and down along the second direction; the second Faraday detection unit comprises the horizontal detection unit and the vertical detection unit located on the adjacent two sides of the target wafer; and the second direction intersects the first direction.

[0019] The rotation position of the horizontal detection unit and the corresponding fourth ion beam waveform in at least one detection period are obtained; the fourth ion beam waveform is the ion beam waveform obtained by the vertical detection unit when the horizontal detection unit rotates left and right along the first direction.

[0020] It is determined whether the third ion beam waveform and / or the fourth ion beam waveform has a reversing point, and the real deflection angle of the ion beam relative to the target wafer is determined in response to the rotation position corresponding to the reversing point.

[0021] In another aspect, the present application also provides an ion beam detection device according to some embodiments, which comprises a second Faraday detection unit and a processing unit. The second Faraday detection unit comprises a horizontal detection unit and a vertical detection unit located on the adjacent two sides of a target wafer. The horizontal detection unit is used to obtain the rotation position of the vertical detection unit and the corresponding third ion beam waveform when the vertical detection unit rotates up and down along the vertical direction for at least one detection period. The vertical detection unit is used to obtain the rotation position of the horizontal detection unit and the corresponding fourth ion beam waveform when the horizontal detection unit rotates left and right along the horizontal direction for at least one detection period. The processing unit is connected with the second Faraday detection unit and is configured to analyze whether the third ion beam waveform and / or the fourth ion beam waveform has a reversing point, and to determine the real deflection angle of the ion beam relative to the target wafer in response to the rotation position corresponding to the reversing point.

[0022] In another aspect, the present application also provides an ion beam detection method according to some embodiments, which is applied to the ion beam detection device in the above embodiments. The ion beam detection method comprises the following steps.

[0023] The rotation position of the vertical detection unit and the corresponding third ion beam waveform within at least one detection cycle are obtained; the third ion beam waveform is the ion beam waveform obtained by the horizontal detection unit when the vertical detection unit rotates up and down in the vertical direction; the second Faraday detection unit includes the horizontal detection unit and the vertical detection unit respectively located on two adjacent sides of the target wafer.

[0024] The rotation position of the horizontal detection unit and the corresponding fourth ion beam waveform within at least one detection cycle are acquired; the fourth ion beam waveform is the ion beam waveform acquired by the vertical detection unit when the horizontal detection unit rotates left and right along the horizontal direction.

[0025] The third ion beam waveform and / or the fourth ion beam waveform are analyzed to determine whether they have a reversal point, and a true deflection angle of the ion beam relative to the target wafer is determined in response to a rotation position corresponding to the reversal point.

[0026] On the other hand, the present application also provides an ion implantation device according to some embodiments, including the ion beam detection device as described in any of the above embodiments.

[0027] The embodiments of the present application may or at least have the following advantages:

[0028] In an embodiment of the present application, an ion beam deflection unit controls the deflection or non-deflection of an ion beam within its ion beam transmission channel. A first Faraday detection unit is used to obtain a first ion beam waveform when the ion beam is not deflected, and a second ion beam waveform after the ion beam is deflected. A processing unit can then compare the waveform difference between the first and second ion beam waveforms and determine the actual implanted energy of the ion beam based on this waveform difference. In this way, the ion beam detection device provided by the embodiment of the present application can monitor the actual implanted energy of the ion beam online. The embodiment of the present application takes into account both macroscopic and microscopic variations in ion beam energy, accurately measuring the actual implanted energy of the ion beam to ensure that the actual implanted energy of the ion beam is within an acceptable range for the process, thereby improving product yield. Furthermore, the ion beam deflection unit and the first Faraday detection unit in the embodiment of the present application can operate independently or collaboratively. The embodiment of the present application can arbitrarily target the ion beam implanted energy (especially the energy purity) required by the process, offering strong applicability and scalability, and can be widely applied to various ion implantation processes (especially high-end processes).

[0029] The details of one or more embodiments of the present application are set forth in the following drawings and description. Other features, objects, and advantages of the present application will become apparent from the description, drawings, and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0031] Figure 1 is a schematic structural diagram of an ion beam detection device provided in some embodiments;

[0032] Figure 2 is a schematic structural diagram of an ion beam deflection unit provided in some embodiments;

[0033] Figure 3 for Figure 2 A schematic diagram of a state in which an ion beam is deflected upward in an ion beam deflection unit is shown;

[0034] Figure 4 for Figure 2 A schematic diagram of a state in which an ion beam is deflected downward in an ion beam deflection unit is shown;

[0035] Figure 5 is a schematic structural diagram of a first Faraday detection unit provided in some embodiments;

[0036] Figure 6 is a schematic structural diagram of an ion beam incident end face in a first Faraday sensor provided in some embodiments;

[0037] Figure 7 Schematic diagram of a state where a first Faraday detection unit is located at different moving positions relative to an ion beam deflection unit, provided in some embodiments;

[0038] Figure 8 is a schematic diagram of a first ion beam waveform provided in some embodiments;

[0039] Figure 9 A schematic diagram of an ion beam deflection path provided in some embodiments;

[0040] Figure 10 A schematic diagram showing a waveform comparison between a first ion beam waveform and a second ion beam waveform provided in some embodiments;

[0041] Figure 11 A schematic diagram showing a waveform comparison between another first ion beam waveform and a second ion beam waveform provided in some embodiments;

[0042] Figure 12 is a side view schematic diagram of another ion beam detection device provided in some embodiments;

[0043] Figure 13 is a schematic diagram of a three-dimensional structure of another ion beam detection device provided in some embodiments;

[0044] Figure 14 A schematic diagram of the distribution of rotation angles of a vertical detection unit provided in some embodiments;

[0045] Figure 15 is a waveform diagram of a fourth ion beam waveform provided in some embodiments;

[0046] Figure 16 A waveform diagram of a fourth ion beam waveform when a rotation angle deviation between a second Faraday detection unit and the ion beam is greater than 5°, provided in some embodiments;

[0047] Figure 17 A waveform diagram of a fourth ion beam waveform when a rotation angle deviation between a second Faraday detection unit and the ion beam is less than -5° provided in some embodiments;

[0048] Figure 18 A schematic flow chart of an ion beam detection method provided in some embodiments;

[0049] Figure 19 A schematic flow chart of another ion beam detection method provided in some embodiments.

[0050] Description of reference numerals:

[0051] 1- ion beam deflection unit, 10- ion beam transmission channel, 11- cavity, 12- wire winding, 2- first Faraday detection unit, 21- first Faraday sensor, 211- slit, 22- driving mechanism, 221- telescopic assembly, 222- driving motor, 23- encoder, 3- processing unit, 4- second Faraday detection unit, 41- horizontal detection unit, 42- vertical detection unit, 5- wafer carrier plate, 51- hollow connecting tube, 6- target wafer. DETAILED DESCRIPTION

[0052] To facilitate understanding of the present application, a more comprehensive description of the present application will be provided below with reference to the accompanying drawings. The drawings illustrate preferred embodiments of the present application. However, the present application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and comprehensive understanding of the present disclosure.

[0053] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application.

[0054] It should be understood that when an element or layer is referred to as being "on," "adjacent to," or "connected to" another element or layer, it may be directly on, adjacent to, connected to, or coupled to the other element or layer, or there may be intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types, and / or portions, these elements, components, regions, layers, doping types, and / or portions should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, doping type, or portion from another element, component, region, layer, doping type, or portion. Thus, a first element, component, region, layer, doping type, or portion discussed below may be represented as a second element, component, region, layer, or portion without departing from the teachings of the present application.

[0055] As used herein, the singular forms "a," "an," and "the" may also include the plural forms, unless the context clearly indicates otherwise. It should also be understood that when the terms "comprising" and / or "including" are used in this specification, they may specify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. At the same time, when used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0056] The ion beam implantation energy is directly related to the implantation depth of the ion implantation process. Currently, as device sizes continue to shrink, the requirements for ion implantation depth in device manufacturing processes are becoming increasingly precise. For example, excessively deep ion implantation can result in implantation in locations that should not be conductive, causing uncontrolled device turn-on. On the other hand, excessively shallow ion implantation often results in an insufficient conductive channel, preventing the device from turning on at the turn-on voltage.

[0057] In related art, the energy of an ion beam is determined by the potential difference between the ion beam and the target wafer before implantation. Theoretically, the potential difference between the ion beam and the target wafer before implantation can be used to characterize the ion beam's implantation energy. Changes and fluctuations in the ion beam's implantation energy correspond to changes and fluctuations in the corresponding potential difference. Therefore, in related art, the implantation energy of an ion beam is often determined by measuring the potential difference between a potential energy device on the machine (e.g., the ion beam emitter) and ground.

[0058] However, the applicant has discovered that, from a microscopic perspective, ion beams undergo scattering, sputtering, collisions, mutual repulsion, and attraction during transmission, creating a risk that the actual ion beam injection energy may be inconsistent with the preset potential difference. For example, during acceleration and focusing, the ion beam is susceptible to gaining or releasing energy due to various fields generated by the ion beam itself and / or the environment. However, this energy is uncontrollable, and these energy variations in the ion beam can also be injected into the target wafer to a certain extent, resulting in poor controllability of process devices, thus becoming a bottleneck for improving product yield in high-end processes.

[0059] Based on this, the embodiments of the present application provide an ion beam detection device, an ion beam detection method, and an ion implantation device, which can accurately measure the actual implantation energy of the ion beam to ensure that the actual implantation energy of the ion beam is within the acceptable range of the process, thereby helping to improve product yield. At the same time, it has strong applicability and scalability and can be widely used in various ion implantation processes.

[0060] See also Figure 1 The ion beam detection device provided in some embodiments of the present application includes an ion beam deflection unit 1, a first Faraday detection unit 2 and a processing unit 3.

[0061] The ion beam deflection unit 1 includes an ion beam transmission channel for controlling the ion beam within the ion beam transmission channel to be emitted in a target direction. The ion beam transmission channel extends along a first direction (e.g., the X direction), and the target direction is either the same as the first direction (e.g., the X direction) or deflected relative to the first direction (e.g., the X direction).

[0062] The first Faraday detection unit 2 is located on the side of the ion beam emitted by the ion beam deflection unit 1, and is used to move back and forth along the second direction (for example, the Y direction) and obtain the first ion beam waveform within at least one detection period when the target direction is the same as the first direction (for example, the X direction), and the second ion beam waveform within at least one detection period when the target direction is deflected relative to the first direction (for example, the X direction).

[0063] Here, the second direction (eg, the Y direction) intersects with the first direction (eg, the X direction), for example, is orthogonal to the first direction.

[0064] For example, the first direction (eg, X direction) is a horizontal direction, and the second direction (eg, Y direction) is a vertical direction.

[0065] Please continue reading Figure 1 The processing unit 3 is connected to the first Faraday detection unit 2 and is configured to compare the waveform difference between the first ion beam waveform and the second ion beam waveform to determine the actual injection energy of the ion beam according to the waveform difference.

[0066] In the embodiment of the present application, the ion beam is controlled to be deflected or not deflected in its ion beam transmission channel by the ion beam deflection unit 1, and the first ion beam waveform when the ion beam is not deflected and the second ion beam waveform after the ion beam is deflected are obtained by the first Faraday detection unit 2. Then, the processing unit 3 can compare the waveform difference between the first ion beam waveform and the second ion beam waveform, and determine the actual injection energy of the ion beam based on the waveform difference. In this way, the ion beam detection device provided in the embodiment of the present application can be used as an actual beam injection energy monitoring system (Actual Beam Energy Monitor System, referred to as ABEMS) to monitor the actual injection energy of the ion beam online. The embodiment of the present application takes into account the changes in ion beam energy at both macroscopic and microscopic angles, and can accurately measure the actual injection energy of the ion beam to ensure that the actual injection energy of the ion beam is within the acceptable range of the process, thereby helping to improve product yield.

[0067] Furthermore, the ion beam deflection unit 1 and first Faraday detection unit 2 in the embodiment of the present application can operate independently or collaboratively. This embodiment of the present application can arbitrarily target the ion beam implantation energy (especially energy purity) required by the process, exhibiting strong applicability and scalability, and can be widely applied to various ion implantation processes (especially high-end processes).

[0068] See also Figure 2 In some embodiments of the present application, an ion beam deflection unit 1 includes a cavity 11 and a wire winding 12. The cavity 11 includes an ion beam transmission channel 10 extending in a horn-shaped manner along a first direction (e.g., the X direction). The wire winding 12 is insulated and wound around the outer wall of the cavity 11 to generate a magnetic field within the ion beam transmission channel 10 when energized. Adjacent turns of the wire in the wire winding 12 are insulated from each other.

[0069] It can be understood that the ion beam deflection unit 1, as an energy magnet unit (EMU), can achieve ion beam deflection control in any direction by changing the winding direction of the wire winding 12 and the direction of the current when energized, thereby adapting to different spaces in the cavity 11. Specifically, according to Ampere's law, after direct current is passed through the wire winding 12 in the ion beam deflection unit 1, the wire winding 12 forms a magnetic field within the ion beam transmission channel 10. The north pole of this magnetic field can be determined by the direction of the current in the wire winding 12 and the direction of the thumb. When the direction of the current in the wire winding 12 changes, the north pole of the magnetic field also changes.

[0070] Correspondingly, according to the left-hand rule, charged particles moving in a magnetic field will be deflected.

[0071] For example, Figure 3As shown in FIG. 1, the ion beam deflection unit 1 controls the ion beam to deflect upward along a second direction (e.g., the Y direction). At this time, the magnetic field generated by the energized wire winding 12 is as shown in FIG. 2. Figure 3 As shown in FIG. 1, the ion beam deflection unit 1 controls the ion beam to deflect upward along a second direction (e.g., the Y direction). At this time, the magnetic field generated by the energized wire winding 12 is as shown in FIG. 2.

[0072] In other examples, as shown in FIG. 3, the direction of the current in the wire winding 12 is changed, and the ion beam deflection unit 1 can control the ion beam to deflect downward along the second direction (e.g., the Y direction). Figure 4

[0073] Please refer to FIG. 4 and FIG. 5. Figure 5 and Figure 6 In some embodiments of the present application, the first Faraday detection unit 2 includes a first Faraday sensor 21 and a driving mechanism 22. The first Faraday sensor 21 has a slit 211 facing the ion beam deflection unit 1. The driving mechanism 22 is connected to the first Faraday sensor 21 and is used to drive the first Faraday sensor 21 to reciprocate along the second direction (e.g., the Y direction).

[0074] For example, the first Faraday sensor 21 includes but is not limited to a Faraday cup. The detection principle of the first Faraday sensor 21 can be as follows: when positive ions enter the first Faraday sensor 21, they are neutralized with electrons, and the ammeter shows a real-time current, which represents the size of the ion beam. The waveform change of the ion beam can be characterized by the change of the current.

[0075] In some examples, the length L of the first Faraday sensor 21 is greater than the diameter of the target wafer. For example, for a 12-inch target wafer, the length L of the first Faraday sensor 21 is in the range of 280mm~360mm; for example, the length L can be 280mm, 290mm, 300mm, 320mm, 350mm or 360mm, etc.

[0076] ​In some examples, the height of the slit 211 in the first Faraday sensor 21 ranges from 0.1 mm to 10 mm; for example, the height can be 0.1 mm, 0.5 mm, 1 mm, 2 mm, 5 mm, 8 mm, or 10 mm. The smaller the height of the slit 211, the higher the measurement accuracy of the first Faraday sensor 21. However, it is understood that a slit 211 that is too small can easily complicate design and maintenance. Therefore, the height of the slit 211 should be appropriately selected to meet the requirements.

[0077] For example, the driving mechanism 22 includes a telescopic assembly 221 connected to the first Faraday sensor 21, and a driving motor 222 connected to the telescopic assembly 221. When the driving motor 222 rotates, the telescopic assembly 221 can drive the first Faraday sensor 21 to move at a constant speed in the second direction (e.g., the Y direction).

[0078] Please continue reading Figure 5 In some embodiments of the present application, the first Faraday detection unit 2 further includes an encoder 23. The encoder 23 is connected to the driving mechanism 22 and / or the first Faraday sensor 21 and is configured to record the movement position of the first Faraday sensor 21.

[0079] For example, the encoder 23 is provided at the driving end of the driving motor 222 in the driving mechanism 22 , and can record the moving position of the first Faraday sensor 21 through the driving output of the driving electrode 222 .

[0080] Please combine Figure 7 As shown in FIG. (a), FIG. (b) and FIG. (c), the driving mechanism 22 drives the first Faraday sensor 21 to move from the initial position to the top along the second direction (eg, the Y direction), wherein: Figure 7 Figure (a) is a schematic diagram of the state when the first Faraday sensor 21 is located at the initial position; Figure 7 Figure (b) is a schematic diagram of the state when the first Faraday sensor 21 is located at the target position. At this time, the ion beam can pass through the slit 211 and enter the first Faraday sensor 21, and the ion beam waveform is detected by the first Faraday sensor 21; Figure 7 Figure (c) is a schematic diagram of the state when the first Faraday sensor 21 is at the extreme position. At this time, the first Faraday sensor 21 stops moving and can move back to the initial position along the second direction (for example, the Y direction). That is, this moment is also the reversal point P in the subsequent ion beam waveform diagram.

[0081] Understandable, see Figure 7 In FIG. 5 , when the first Faraday sensor 21 is located at the extreme position, the extension line of the graphite wire in the first Faraday sensor 21 along the first direction (eg, X direction) must be higher than the top of the ion beam deflection unit 1 .

[0082] To facilitate description of the working principle of the ion beam detection device in the above embodiments, some of the following embodiments are described in detail by taking the ion beam deflection unit 1 controlling the ion beam to deflect upward along the second direction (eg, the Y direction) as an example.

[0083] Please combine Figures 8 to 10 It is understood that when the wire winding 12 in the ion beam deflection unit 1 is not energized, the ion beam transmission path remains unchanged and can be emitted from the ion beam deflection unit 1 along the first direction (for example, the X direction). The first Faraday detection unit 2 can obtain the first ion beam waveform F1 within a detection period T as shown in FIG. Figure 8 and Figure 10 As shown in Figure (a).

[0084] On this basis, the wire winding 12 in the ion beam deflection unit 1 is energized to generate a magnetic field B in the ion beam transmission channel 10. The magnetic field B is controlled by the wire current I in the wire winding 12. The first Faraday detection unit 2 can obtain the second ion beam waveform F2 in one detection period T as shown in FIG. Figure 10 As shown in Figure (b).

[0085] It can be understood that the ion beam deflection radius r satisfies the formula: r=mv / Bq, where m is the electron mass, v is the electron velocity, and q is the electron charge. Since m, v, B, and q are all known, the ion beam deflection radius r is also known. Assuming that the injection energy of all ion beams is the same, then Figure 10 As shown in , after the ion beam is deflected, the starting position of the second ion beam waveform F2 that can be obtained by the first Faraday detection unit 2 within a detection period T should be the position where the starting position of the first ion beam waveform F1 is shifted by a distance H. Figure 9 Understand that sinα=L / r; H=L×tanα; where the distance L and the deflection radius r are known, then the distance H is determined.

[0086] In some embodiments, if a comparison of the waveform difference between the first ion beam waveform F1 and the second ion beam waveform F2 reveals that only a relative translation occurs between the first ion beam waveform F1 and the second ion beam waveform F2 and that the two waveforms are identical or the waveform difference between the two is less than or equal to a first target threshold, then it can be determined that the actual implantation energy of the ion beam meets the process target. The first target threshold includes, but is not limited to, 1%.

[0087] Here, the smaller the first target threshold, the stricter the ion beam detection device detects the purity of the ion beam implantation energy. The value of the first target threshold can determine the purity detection accuracy of the ion beam implantation energy to achieve purity control of the ion beam implantation energy.

[0088] If it is found that the first ion beam waveform F1 and the second ion beam waveform F2 have a relative shift and the waveform difference between the first ion beam waveform F1 and the second ion beam waveform F2 is greater than the second target threshold by comparing the waveform difference between the first ion beam waveform F1 and the second ion beam waveform F2, the real injection energy of the ion beam does not meet the process target, and an ion beam energy adjustment signal needs to be output to make the machine respond to the ion beam energy adjustment signal to re-adjust the injection energy of the ion beam until the real injection energy (i.e. energy purity) of the ion beam meets the process target.

[0089] For example, the second target threshold is the same as the first target threshold, or the second target threshold is greater than the first target threshold.

[0090] For example, referring to Figure 11 , the first ion beam waveform F1 and the second ion beam waveform F2 have a relative shift and the waveform difference between the first ion beam waveform F1 and the second ion beam waveform F2 is greater than the second target threshold. Thus, it is proved that the deflection radius of the ion beam corresponding to the second ion beam waveform F2 has changed. Since the mass m of the electron, the charge q of the electron and the magnetic field B do not change, it can be uniquely determined that the change of the waveform of the second ion beam waveform F2 is caused by the change of the electron velocity v, which can represent the change of the real injection energy of the ion beam.

[0091] For example, referring to Figure 12 and Figure 13 In some embodiments of the present application, the ion beam detection device further comprises a second Faraday detection unit 4. The second Faraday detection unit 4 comprises a horizontal detection unit 41 and a vertical detection unit 42 located on the adjacent two sides of the target wafer 6, respectively. The horizontal detection unit 41 is used to obtain the rotation position of the vertical detection unit 42 and the corresponding third ion beam waveform when the vertical detection unit 42 rotates up and down along the second direction (for example, the Y direction) for at least one detection period. The vertical detection unit 42 is used to obtain the rotation position of the horizontal detection unit 41 and the corresponding fourth ion beam waveform when the horizontal detection unit 41 rotates left and right along the first direction (for example, the X direction) for at least one detection period.

[0092] Here, the vertical detection unit 42 rotates up and down along the second direction (for example, the Y direction) and the horizontal detection unit 41 rotates left and right along the first direction (for example, the X direction) can be performed independently, or the second Faraday detection unit 4 is rotated as a whole, and the embodiments of the present application do not limit this.

[0093] Correspondingly, the processing unit 3 is further connected with the second Faraday detection unit 4 and is configured to analyze whether the third ion beam waveform and / or the fourth ion beam waveform has a commutation point, so as to determine the real deflection angle of the ion beam relative to the target wafer 6 according to the rotation position corresponding to the commutation point.

[0094] In the embodiment of the present application, the rotation position of the vertical detection unit 4 and the corresponding third ion beam waveform are obtained by the horizontal detection unit 41, and the rotation position of the horizontal detection unit 41 and the corresponding fourth ion beam waveform are obtained by the vertical detection unit 42. Then, the processing unit 3 can analyze whether the third ion beam waveform and / or the fourth ion beam waveform has a reversal point, so as to determine the actual deflection angle of the ion beam relative to the target wafer 6 in response to the rotation position corresponding to the reversal point. Compared with the related art in which the ion beam injection angle is characterized by a single ion beam angle, the ion beam detection device provided in the embodiment of the present application can monitor the actual deflection angle of the ion beam relative to the target wafer 6 online, so as to perform linkage detection and compensation for the actual injection angle between the ion beam and the target wafer 6, thereby filling the gap in the industry, which is conducive to further improving the product yield and has strong applicability and scalability, and can be widely used in various ion injection processes (especially high-end processes).

[0095] In some examples, the horizontal detection unit 41 and the vertical detection unit 42 each include a Faraday sensor, a drive mechanism, and an encoder. The Faraday sensor includes a slit for capturing an ion beam, including but not limited to a Faraday cup; the drive mechanism is connected to the Faraday sensor and is configured to drive the Faraday sensor to rotate; and the encoder is connected to the drive mechanism and / or the Faraday sensor and is configured to record the rotational position of the Faraday sensor.

[0096] It can be understood that when the driving mechanism has both the up and down movement function and the rotation function, the aforementioned first Faraday detection unit 2 and the horizontal detection unit 41 can share the same detection unit.

[0097] Optionally, the encoder 23 in the first Faraday detection unit 2 and the encoders in the vertical detection unit 42 and the horizontal detection unit 41 can be independently provided or integrated into one.

[0098] In addition, please refer to Figure 13 , the target wafer 6 is carried on the wafer carrier plate 5. The wafer carrier plate 5 is usually placed vertically and has a hollow connecting tube 51. Accordingly, the horizontal detection unit 41 and the vertical detection unit 42 can be rotatably installed in a designated area of ​​the wafer carrier plate 5, for example, located beside the wafer carrier plate 5 and close to the back of the wafer carrier plate 5, wherein the horizontal detection unit 41 is extended in the horizontal direction and the vertical detection unit 42 is extended in the vertical direction. . The signal line connecting the horizontal detection unit 41 and the vertical detection unit 42 can be passed through the aforementioned hollow connecting tube 51 and led out to connect with the processing unit 3.

[0099] Optionally, when detecting the actual implantation energy and / or the actual implantation angle of the ion beam, the target wafer 6 carried on the wafer carrier plate 5 may be a dummy wafer rather than a formal production wafer.

[0100] It is worth mentioning that in some embodiments of this application, please combine Figure 14 It is understood that the vertical detection unit 42 can rotate up and down along the second direction (e.g., the Y direction) within the detection period within a range of angles from -60° to +90°. The horizontal detection unit 41 can rotate left and right along the first direction (e.g., the X direction) within the detection period within a range of angles from -90° to +90°.

[0101] It can be understood that within a detection cycle, the smaller the rotation angles of the horizontal detection unit 41 and the vertical detection unit 42 are, the higher the detection accuracy is. At the same time, higher requirements are placed on the machine hardware and the ion beam angle deviation.

[0102] Optionally, the rotation angles of the horizontal detection unit 41 and the vertical detection unit 42 may each range from 0.5° to 10°.

[0103] In some examples, the vertical detection unit 42 rotates up and down along the second direction (e.g., the Y direction) within a detection period within a range of -5° to +5°. The horizontal detection unit 41 rotates left and right along the first direction (e.g., the X direction) within a detection period within a range of -5° to +5°.

[0104] In the following embodiments, Figures 15 to 17 Taking the second Faraday detection unit 4 as an example in which the entire unit rotates and the vertical detection unit 42 and the horizontal detection unit 41 rotate at an angle of -5° to +5° within one detection cycle, the detection principle of the actual ion beam injection angle in the above embodiment is described in detail.

[0105] See also Figure 15 When the horizontal detection unit 41 rotates left and right from the middle 0 degree along the first direction (for example, the X direction) during the detection period, the driving motor in the vertical detection unit 42 rotates the same angle, and the vertical detection unit 42 can detect and obtain the fourth ion beam waveform F4 as shown in FIG. Figure 15 Here, the rotation angle of the driving motor in the vertical detection unit 42 can be used to represent the rotation position of the horizontal detection unit 41.

[0106] Please continue reading Figure 15 In a detection cycle when the vertical detection unit 42 starts to capture the ion beam, the second Faraday detection unit 4 first rotates counterclockwise from the middle 0° to -5°, then returns to 0°, and then rotates clockwise to +5°. Figure 15As shown in , the fourth ion beam waveform F4 will have an intersection point within a detection cycle. The maximum ion beam current point corresponding to the intersection point can be called the reversing point P. The reversing point P corresponds to the rotation angle of the drive motor in the vertical detection unit 42 marked as T0. The rotation angle T0 at this time is the true vertical angle between the ion beam and the target wafer 6 (or wafer carrier plate 5).

[0107] Similarly, when the vertical detection unit 42 rotates up and down from the middle 0 degree along the second direction (for example, the Y direction) during the detection period, the driving motor in the horizontal detection unit 41 rotates the same angle, and the horizontal detection unit 41 can detect and obtain the third ion beam waveform F3, which is the same as the horizontal detection unit 41. Figure 15 . Here, the rotation angle of the drive motor in the horizontal detection unit 41 can be used to represent the rotational position of the vertical detection unit 42. Furthermore, combined with the aforementioned method for determining the rotation angle T0, the true horizontal angle between the ion beam and the target wafer 6 (or wafer carrier 5) can also be obtained.

[0108] It is understood that the actual rotation angle T0 between the ion beam and the target wafer 6 (or wafer carrier 5) may deviate to a certain extent from the absolute vertical 0° or absolute horizontal 0° of the target wafer 6 (or wafer carrier 5), for example, a deviation Δ. After detecting and obtaining the aforementioned true vertical angle and / or true horizontal angle, before the ion beam is formally implanted, angle compensation for the deviation Δ may be performed based on the angle set in the ion beam control menu. For example, T0 (T0 is a vector with a direction) may be added to the original set angle to ensure that the actual implantation angle of the ion beam meets the target set value.

[0109] For ease of description, the following embodiments are described as follows: the horizontal detection unit 41 rotates left and right from the middle 0 degree along the first direction (eg, X direction) during the detection period, and the vertical detection unit 42 detects and obtains the fourth ion beam waveform F4.

[0110] See also Figure 16 and Figure 17 , Figure 16 The fourth ion beam waveform F4 shown is the ion beam waveform when the rotation angle deviation Δ between the second Faraday detection unit 4 and the ion beam is greater than 5°. Figure 17 The fourth ion beam waveform F4 shown is the ion beam waveform when the rotation angle deviation Δ between the second Faraday detection unit 4 and the ion beam is less than -5°. Figure 16 and Figure 17 No reversal point P appears in the fourth ion beam waveform F4 shown.

[0111] Therefore, if the third ion beam waveform F3 and / or the fourth ion beam waveform F4 do not contain a reversal point P, it indicates that the angular deviation between the machine hardware and the ion beam is greater than or equal to a set threshold (typically the minimum value allowed by the machine hardware). In other words, by detecting the presence of a reversal point P in the ion beam waveform, the operating status of the machine hardware can be determined, ensuring that the machine hardware is in good working condition before each ion implantation.

[0112] For example, if no reversal point P appears in the third ion beam waveform F3 and / or the fourth ion beam waveform F4, the processing unit 3 may further control the machine to shut down and / or trigger an alarm so that the operator can promptly check the machine hardware.

[0113] The present application also provides an ion beam detection method for use with the ion beam detection device in the above embodiment. The ion beam detection method also possesses the technical advantages of the above ion beam detection device, which will not be described in detail here.

[0114] See also Figure 18 The ion beam detection method includes the following steps S100~S400.

[0115] S100, acquiring a first ion beam waveform within at least one detection cycle.

[0116] Here, the first ion beam waveform is the ion beam waveform obtained when the ion beam deflection unit controls the ion beam in the ion beam transmission channel to be emitted along the first direction and the first Faraday detection unit reciprocates along the second direction; the first direction is the extension direction of the ion beam transmission channel.

[0117] S200, acquiring a second ion beam waveform within at least one detection cycle.

[0118] Here, the second ion beam waveform is the ion beam waveform obtained when the first Faraday detection unit reciprocates along the second direction when the ion beam in the ion beam transmission channel is deflected relative to the first direction by the ion beam deflection unit and then emitted.

[0119] S300 , determining a waveform difference between a first ion beam waveform and a second ion beam waveform.

[0120] S400: determining the actual implantation energy of the ion beam according to the waveform difference.

[0121] For example, in some embodiments of the present application, in step S400, the actual injection energy of the ion beam is determined based on the waveform difference, including: if the first ion beam waveform and the second ion beam waveform are relatively shifted and the two waveforms are the same or the waveform difference between the two is less than or equal to the first target threshold, then the actual injection energy of the ion beam meets the process target; if the first ion beam waveform and the second ion beam waveform are relatively shifted and the waveform difference between the two is greater than the second target threshold, then the actual injection energy of the ion beam does not meet the process target, and an ion beam energy adjustment signal is output.

[0122] See also Figure 19 In other embodiments of the present application, the ion beam detection method further includes the following steps S500 to S700.

[0123] S500 , obtaining a rotation position of a vertical detection unit and a corresponding third ion beam waveform within at least one detection cycle.

[0124] Here, the third ion beam waveform is the ion beam waveform acquired by the horizontal detection unit when the vertical detection unit rotates up and down along the second direction. The second Faraday detection unit includes a horizontal detection unit and a vertical detection unit, respectively, located on two adjacent sides of the target wafer. The second direction intersects with the first direction, for example, is orthogonal.

[0125] S600, obtaining the rotational position of the horizontal detection unit and the corresponding fourth ion beam waveform within at least one detection cycle.

[0126] Here, the fourth ion beam waveform is the ion beam waveform acquired by the vertical detection unit when the horizontal detection unit rotates left and right along the first direction.

[0127] S700 , analyzing whether the third ion beam waveform and / or the fourth ion beam waveform has a reversal point, and determining a real deflection angle of the ion beam relative to the target wafer in response to a rotation position corresponding to the reversal point.

[0128] In some embodiments of the present application, step S700 analyzes whether the third ion beam waveform and / or the fourth ion beam waveform has a reversal point, and determines the actual deflection angle of the ion beam relative to the target wafer in response to the rotation position corresponding to the reversal point, which may include the following steps S710 and S720.

[0129] S710, in response to the third ion beam waveform and / or the fourth ion beam waveform having a reversal point, determine the rotation position corresponding to the reversal point, and determine the actual deflection angle of the ion beam relative to the target wafer based on the deviation between the rotation position and the absolute 0° corresponding to the target wafer.

[0130] S720 : In response to the third ion beam waveform and / or the fourth ion beam waveform having no reversal point, output a machine stop instruction and / or an alarm instruction.

[0131] It should be understood that although Figure 18 and Figure 19 The steps in the flowchart are shown in sequence as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified in this document, there is no strict order restriction for the execution of these steps, and these steps can be executed in other orders. In addition, Figure 18 and Figure 19 At least part of the steps may include multiple sub-steps or multiple stages. These sub-steps or stages are not necessarily executed at the same time, but can be executed at different times. The execution order of these sub-steps or stages is not necessarily sequential, but can be executed in turn or alternately with other steps or at least part of the sub-steps or stages of other steps.

[0132] It should be added that, in some embodiments, the ion beam injection angle is directly related to the injection depth of the ion injection process and the conductive performance of the device. The method of detecting the ion beam injection angle in the related art is a single detection method for the theoretical angle, which is prone to large errors. However, the applicant found that the injection angle when the ions are actually injected does not only depend on the angle of the ion beam, but is also affected by the relative angle between the ion beam and the target wafer. Moreover, the actual ion injection angle not only determines the ion injection depth, but is also related to the shape of the device after the ion injection. As the process line width becomes smaller and smaller, the ion injection angle has an increasingly significant impact on the shape of the device after the ion injection, and can directly determine the conductive performance of the device. Based on this, the embodiment of the present application also provides an ion beam detection device and an ion beam detection method, which can accurately measure the actual injection angle of the ion beam, so as to perform linkage detection and compensation for the actual injection angle between the ion beam and the target wafer, thereby helping to improve product yield. At the same time, it has strong applicability and scalability and can be widely used in various ion injection processes.

[0133] See also Figure 12 and Figure 13The ion beam detection device provided in an embodiment of the present application includes: a second Faraday detection unit 4 and a processing unit 3. The second Faraday detection unit 4 includes: a horizontal detection unit 41 and a vertical detection unit 42 respectively located on two adjacent sides of the target wafer 6. The horizontal detection unit 41 is used to obtain the rotation position of the vertical detection unit 42 and the corresponding third ion beam waveform when the vertical detection unit 42 rotates up and down along the vertical direction (for example, the Y direction) for at least one detection cycle. The vertical detection unit 42 is used to obtain the rotation position of the horizontal detection unit 41 and the corresponding fourth ion beam waveform when the horizontal detection unit 41 rotates left and right along the horizontal direction (for example, the X direction) for at least one detection cycle. The processing unit is connected to the second Faraday detection unit and is configured to: analyze whether the third ion beam waveform and / or the fourth ion beam waveform has a reversal point, so as to determine the actual deflection angle of the ion beam relative to the target wafer in response to the rotation position corresponding to the reversal point. The processing unit 3 is connected to the second Faraday detection unit 4 and is configured to: analyze whether the third ion beam waveform and / or the fourth ion beam waveform has a reversal point, so as to determine the actual deflection angle of the ion beam relative to the target wafer 6 in response to the rotation position corresponding to the reversal point.

[0134] In addition, the specific features, structures, materials or characteristics related to or described in the corresponding examples in some of the aforementioned ion beam detection device embodiments may also be combined with the embodiment or included in at least one embodiment or example of the present application.

[0135] See also Figure 19 The ion beam detection method provided in the embodiment of the present application includes the following steps S500~S700.

[0136] S500 , obtaining a rotation position of a vertical detection unit and a corresponding third ion beam waveform within at least one detection cycle.

[0137] Here, the third ion beam waveform is the ion beam waveform acquired by the horizontal detection unit when the vertical detection unit rotates up and down in the vertical direction. The second Faraday detection unit includes a horizontal detection unit and a vertical detection unit respectively located on two adjacent sides of the target wafer.

[0138] S600, obtaining the rotational position of the horizontal detection unit and the corresponding fourth ion beam waveform within at least one detection cycle.

[0139] Here, the fourth ion beam waveform is the ion beam waveform acquired by the vertical detection unit when the horizontal detection unit rotates left and right along the horizontal direction.

[0140] S700 , analyzing whether the third ion beam waveform and / or the fourth ion beam waveform has a reversal point, and determining a real deflection angle of the ion beam relative to the target wafer in response to a rotation position corresponding to the reversal point.

[0141] In addition, the specific steps or schemes described in some of the aforementioned ion beam detection method embodiments that are related to this embodiment or corresponding to the examples can also be combined with this embodiment or included in at least one embodiment or example of the present application.

[0142] The embodiments of the present application also provide an ion implantation device, including an ion beam detection device as described in any of the above embodiments. The technical advantages possessed by the aforementioned ion beam detection device are also possessed by the ion implantation device, which will not be elaborated here. Moreover, after obtaining the actual injection energy and / or actual angle deviation of the ion beam detected by the ion beam detection device, the ion implantation device provided by the embodiments of the present application can accurately control the ion beam according to the feedback signal of the actual injection energy and / or actual angle deviation of the ion beam, thereby improving the online monitoring of the ion beam implantation process and effectively improving the product yield.

[0143] In the description of this specification, reference to the terms "some embodiments," "some examples," "exemplarily," etc., means that a specific feature, structure, material, or characteristic described in conjunction with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0144] The technical features of the above embodiments can be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0145] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that a person skilled in the art may make various modifications and improvements without departing from the scope of the present application, and such modifications and improvements are all within the scope of protection of the present application.

Claims

1. An ion beam detection device, characterized in that: include: an ion beam deflection unit having an ion beam transmission channel, and configured to control the ion beam in the ion beam transmission channel to be emitted in a target direction; The ion beam transmission channel extends along a first direction, and the target direction is the same as or deflected relative to the first direction; a first Faraday detection unit, located on a side of the ion beam emitted by the ion beam deflection unit, and configured to reciprocate along a second direction and obtain a first ion beam waveform within at least one detection period when the target direction is the same as the first direction, and a second ion beam waveform within at least one detection period when the target direction is deflected relative to the first direction; The second direction intersects the first direction; a processing unit connected to the first Faraday detection unit and configured to: compare a waveform difference between the first ion beam waveform and the second ion beam waveform to determine a true injection energy of the ion beam according to the waveform difference; Wherein, determining the actual implantation energy of the ion beam according to the waveform difference includes: If the first ion beam waveform and the second ion beam waveform are relatively shifted and the two waveforms are the same or the difference between the two waveforms is less than or equal to a first target threshold, then the actual implantation energy of the ion beam meets the process target; If the first ion beam waveform and the second ion beam waveform are relatively shifted and the waveform difference between the two is greater than a second target threshold, the actual implantation energy of the ion beam does not meet the process target, and an ion beam energy adjustment signal is output.

2. The ion beam detection device according to claim 1, characterized in that The ion beam deflection unit comprises: a cavity having the ion beam transmission channel extending in a trumpet shape along the first direction; The wire winding is insulated and wound around the outer wall of the cavity, and is used to form a magnetic field in the ion beam transmission channel after being energized.

3. The ion beam detection device according to claim 1, wherein: The first Faraday detection unit includes: a first Faraday sensor having a slit facing the ion beam deflecting unit; A driving mechanism is connected to the first Faraday sensor and is used to drive the first Faraday sensor to reciprocate along the second direction.

4. The ion beam detection device according to claim 3, characterized in that: The first Faraday detection unit further includes: An encoder is connected to the driving mechanism and / or the first Faraday sensor and is configured to record a moving position of the first Faraday sensor.

5. The ion beam detection device according to any one of claims 1 to 4, characterized in that Also includes: The second Faraday detection unit includes: a horizontal detection unit and a vertical detection unit respectively located on two adjacent sides of the target wafer; the horizontal detection unit is used to obtain the rotational position of the vertical detection unit and the corresponding third ion beam waveform when the vertical detection unit rotates up and down along the second direction for at least one detection cycle; the vertical detection unit is used to obtain the rotational position of the horizontal detection unit and the corresponding fourth ion beam waveform when the horizontal detection unit rotates left and right along the first direction for at least one detection cycle; In which, the processing unit is also connected to the second Faraday detection unit and is configured to: analyze whether the third ion beam waveform and / or the fourth ion beam waveform has a reversal point, so as to determine the actual deflection angle of the ion beam relative to the target wafer in response to the rotation position corresponding to the reversal point. The ion beam detection device according to claim 5 , wherein: The vertical detection unit rotates up and down along the second direction within the detection period. The range of the angle includes: -60° to +90°; The angle value range of the horizontal detection unit rotating left and right along the first direction during the detection period includes: -90° to +90°.

7. An ion beam detection method, characterized in that: include: acquiring a first ion beam waveform within at least one detection period; The first ion beam waveform is an ion beam waveform obtained when the ion beam deflection unit controls the ion beam in the ion beam transmission channel to be emitted along the first direction and the first Faraday detection unit reciprocates along the second direction; the first direction is the extension direction of the ion beam transmission channel; Acquire a second ion beam waveform within at least one detection cycle; the second ion beam waveform is an ion beam waveform acquired when the first Faraday detection unit reciprocates along a second direction when the ion beam in the ion beam transmission channel is deflected relative to the first direction by the ion beam deflection unit and then emitted; the second direction intersects the first direction; determining a waveform difference between the first ion beam waveform and the second ion beam waveform; Determining the actual implantation energy of the ion beam according to the waveform difference includes: If the first ion beam waveform and the second ion beam waveform are relatively shifted and the two waveforms are the same or the difference between the two waveforms is less than or equal to a first target threshold, then the actual implantation energy of the ion beam meets the process target; If the first ion beam waveform and the second ion beam waveform are relatively shifted and the waveform difference between the two is greater than a second target threshold, the actual implantation energy of the ion beam does not meet the process target, and an ion beam energy adjustment signal is output.

8. The ion beam detection method according to claim 7, wherein: Also includes: Obtaining a rotational position of the vertical detection unit and a corresponding third ion beam waveform within at least one detection cycle; the third ion beam waveform is an ion beam waveform obtained by the horizontal detection unit when the vertical detection unit rotates up and down along a second direction; the second Faraday detection unit includes the horizontal detection unit and the vertical detection unit, respectively located on two adjacent sides of the target wafer; the second direction intersects the first direction; Acquire a rotational position of the horizontal detection unit and a corresponding fourth ion beam waveform within at least one detection cycle; the fourth ion beam waveform is an ion beam waveform acquired by the vertical detection unit when the horizontal detection unit rotates left and right along the first direction; The third ion beam waveform and / or the fourth ion beam waveform are analyzed to determine whether they have a reversal point, and a true deflection angle of the ion beam relative to the target wafer is determined in response to a rotation position corresponding to the reversal point.

9. An ion implantation device, characterized in that: It includes the ion beam detection device according to any one of claims 1 to 6.

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