A low-temperature implantation control system and method applied to an ion implanter

Abstract

The application discloses a low-temperature injection control system and a low-temperature injection control method applied to an ion implanter, a remote power distribution cabinet is connected with a cold source through a power cable; the cold source is connected with a valve box through a network cable and a gas conveying pipeline, the valve box is connected with a precooling cavity and a low-temperature target table through pipelines respectively; a first low-temperature target disc is fixed in the precooling cavity and connected with an adsorption power supply through an output cable; a cooling ring and a second low-temperature target disc are both fixed on the low-temperature target table; the cold source is connected with a first ADIO controller through a control cable, the valve box is connected with a second ADIO controller through a control cable, and the adsorption power supply is connected with a third ADIO controller through a control cable; the three ADIO controllers are connected with an industrial computer through optical fibers. The application has the characteristics of compact structure, high stability and convenient operation, solves the demand problem of special product injection process on ion directional positioning injection, and meets the diversified demand of market on ion implanter process requirements.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor ion implantation, and in particular to a low-temperature implantation control system and a low-temperature implantation control method applied to an ion implanter. Background Art

[0002] Ion implantation is a crucial technology in modern integrated circuit manufacturing. It utilizes an ion implanter to dope semiconductors. Specifically, specific impurity atoms (dopants) are injected into silicon semiconductor crystals using ion acceleration to alter their conductive properties and ultimately form transistor structures. Semiconductor device manufacturing technology and processes are extremely complex, and ion implantation is a critical process in semiconductor device manufacturing. Compared to conventional thermal doping processes, ion implantation offers advantages such as high-precision dose uniformity and repeatability, as well as minimal lateral diffusion. This overcomes the limitations of conventional processes, improves circuit integration, speed, yield, and lifespan, and reduces cost and power consumption.

[0003] With the development of technology in the semiconductor field, chip design performance has been improved, and the demand for special design chips has increased. Doping is required in specific locations of specific devices. Ion implantation can be divided into three types according to temperature: high-temperature implantation model, room temperature wafer, and low-temperature implantation model.

[0004] The room temperature implantation model has no temperature control system and injects the beam directly into the wafer. Since the ion beam speed is relatively fast, the wafer will generate heat at the moment it contacts the ions, causing the wafer temperature to increase. After the ions are implanted into the wafer, since the wafer has a certain temperature, the ions can diffuse freely and be evenly distributed inside the wafer. The domestic technology for this implantation method is relatively mature.

[0005] High-temperature tools incorporate a heating system into a standard temperature tool, heating the wafer to a specific temperature before ion implantation. This process is characterized by a higher wafer temperature, resulting in higher ion activity within the wafer, enhanced free diffusion, and a more uniform distribution of ions within the wafer. This implantation method has achieved breakthroughs in domestic technology and is rapidly developing, meeting the requirements of wafer implantation processes.

[0006] Cryogenic equipment similarly incorporates a refrigeration system into a standard temperature equipment, cooling the wafer to a specific temperature before ion implantation. This process is characterized by the lower wafer temperature, resulting in lower ion activity and poor diffusion within the wafer, enabling directional ion implantation. This control process represents a gap in ion implantation technology, and current ion implanters are unable to meet the market's diverse demands for ion implantation processes. Summary of the Invention

[0007] The technical problem to be solved by the present invention is to address the deficiencies of the existing technology and provide a low-temperature implantation control system and a low-temperature implantation control method for an ion implanter, which is convenient to assemble and disassemble, has high stability and is conducive to improving the implantation efficiency of the machine.

[0008] In order to solve the above technical problems, the technical solution adopted by the present invention is:

[0009] A low-temperature implantation control system for an ion implanter comprises: a remote power distribution cabinet, a cold source, a valve box, a pre-cooling cavity, a first low-temperature target disk, an adsorption power supply, a low-temperature target platform, a cooling ring, a second low-temperature target disk, a first ADIO controller, a second ADIO controller, a third ADIO controller, and an industrial computer. The output port of the remote power distribution cabinet is connected to the cold source via a power cable. The cold source is connected to the valve box via a network cable and a gas delivery pipeline. The valve box is respectively connected to the pre-cooling cavity and the low-temperature target platform via output pipelines. The first low-temperature target disk is fixed in the pre-cooling cavity and connected to the adsorption power supply via an output cable. The cooling ring and the second low-temperature target disk are both fixed on the low-temperature target platform, with the second low-temperature target disk located above the cooling ring. The cold source is connected to the first ADIO controller via a control cable. The valve box is connected to the second ADIO controller via a control cable. The adsorption power supply is connected to the third ADIO controller via a control cable. The first ADIO controller, the second ADIO controller, and the third ADIO controller are respectively connected to a communication port of the industrial computer via optical fibers.

[0010] As a further improvement of the present invention, the cold source includes a cabinet body, in which a gas buffer tank, a cold source distribution cabinet, and a compressor, a refrigeration unit, a control valve group, a control input port and a power supply input port connected to the cold source distribution cabinet are arranged; the gas buffer tank is connected to the refrigeration unit, the refrigeration unit cooperates with the compressor to generate cooling gas, and forms a gas loop with the output gas port and the return gas port; the output gas port and the return gas port are respectively connected to the valve box through gas delivery pipes.

[0011] As a further improvement of the present invention, the cabinet is further provided with a first solenoid valve, a first safety valve, a first pressure transmitter and a first manual instrument valve: the first solenoid valve is used to control the gas on and off during the cold source cooling process, the first safety valve is used to protect the safety of the gas circuit, the first pressure transmitter is used to monitor the pipeline pressure in real time and control the pipeline pressure output in real time, and the first manual instrument valve is used to monitor the temperature changes in the gas cooling process in real time.

[0012] As a further improvement of the present invention, a cold source operating table and a manual operating screen are provided on the front panel of the cabinet, and one end of the cold source power distribution cabinet is provided on the front panel of the cabinet.

[0013] As a further improvement of the present invention, the low-temperature target stage includes a target stage air inlet pipe, a target stage air outlet pipe, a first cooling ring cylinder, a first temperature sensor, a second cooling ring cylinder and an air floating shaft; the first temperature sensor is arranged in the second low-temperature target disk to perform temperature closed-loop control; the air floating shaft is fixed to the lower end of the low-temperature target stage for supporting the up and down movement of the low-temperature target stage, the target stage air inlet pipe and the target stage air outlet pipe pass through the air floating shaft, one end of the target stage air inlet pipe and the target stage air outlet pipe are connected to the cooling ring, and one end of the target stage air inlet pipe and the target stage air outlet pipe are connected to the valve box to realize the entry and exit of the cooling ring by the low-temperature gas; the first cooling ring cylinder and the second cooling ring cylinder are located outside the cooling ring, and when the system is running, the first cooling ring cylinder and the second cooling ring cylinder drive the cooling ring to extend to wrap the second low-temperature target disk, and the low-temperature gas cools the second low-temperature target disk and the adsorbed wafer through the cooling ring.

[0014] As a further improvement of the present invention, a first in-position sensor and a second in-position sensor are provided on the cooling ring for detecting the extension displacement of the first cooling ring cylinder and the second cooling ring cylinder.

[0015] As a further improvement of the present invention, the valve box is provided with a low-temperature shut-off valve, a low-temperature regulating valve, a cold air return pipe, a cold air output pipe, a cold air input port and a cold air output port. The cold air input port and the cold air output port are respectively connected to a cold source, and the cold air return pipe and the cold air output pipe are both connected to the pre-cooling cavity and the low-temperature target platform.

[0016] As a further improvement of the present invention, the valve box is further provided with a temperature sensor, a pressure transmitter, a heater, a vacuum gauge and a control valve group.

[0017] As a further improvement of the present invention, a wafer magazine transmission component is provided between the pre-cooling chamber and the low-temperature target table to realize wafer transfer; the wafer magazine transmission component includes a left wafer magazine, a right wafer magazine, a right manipulator, a transmission orientation platform and a left manipulator, the left wafer magazine and the right wafer magazine are arranged outside the ion implanter, and the right manipulator and the left manipulator are symmetrically arranged on both sides of the transmission orientation platform, and correspond to the right wafer magazine and the left wafer magazine respectively.

[0018] As a general technical concept, the present invention also provides a low-temperature implantation control method based on the above-mentioned low-temperature implantation control system applied to an ion implanter, comprising the following steps:

[0019] The following steps are involved:

[0020] Step S1: The engineering machine starts cooling the cold source, and after cooling is completed, opens the valve box to distribute the cooling gas;

[0021] Step S2, cooling the first low-temperature target disk in the pre-cooling chamber to a set temperature;

[0022] Step S3, cooling the second low-temperature target disk in the low-temperature target stage to a set temperature;

[0023] Step S4, controlling the temperature of the second low-temperature target disk to a set value through a closed-loop temperature control method, and then performing an ion implantation process;

[0024] Step S5: After the ion implantation is completed, the wafer is transferred back to the wafer library by a robot arm, and the implanted wafer is subjected to a temperature-recovery treatment inside the wafer library. When the wafer temperature reaches room temperature, the entire implantation process is completed.

[0025] Compared with the prior art, the advantages of the present invention are:

[0026] The present invention is a low-temperature injection control system and a low-temperature injection control method for an ion implanter. The method comprises the following steps: connecting a remote power distribution cabinet to a cold source, connecting the cold source to a valve box, connecting the valve box to a pre-cooling cavity and a low-temperature target platform, fixing a first low-temperature target disk in the pre-cooling cavity and connecting an adsorption power supply, fixing a cooling ring and a second low-temperature target disk on the low-temperature target platform, connecting the cold source, the valve box and the adsorption power supply to corresponding ADIO controllers, connecting the ADIO controller to an industrial computer, and thus forming the main structure of a low-temperature injection control system with a compact structure. The system is installed in parallel with a normal temperature machine system, operates independently, can be disassembled and assembled separately, and is easy to maintain. The wafer can be cooled in advance by the pre-cooling cavity, thereby improving the injection efficiency of the machine and reducing the risk of scratches on the back of the wafer caused by wafer expansion. The present invention realizes cooling of the wafer to achieve the set temperature for injection, fills the gap in the process of the ion implanter, and meets market demand. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 This is a schematic diagram of the structural principle of a low-temperature injection control system in a specific embodiment of the present invention;

[0028] Figure 2 This is a schematic diagram of the component layout of the cold source in a specific embodiment of the present invention;

[0029] Figure 3 This is a schematic diagram of the front panel of a cooling source in a specific embodiment of the present invention;

[0030] Figure 4 This is a schematic diagram of the rear panel of the cooling source in a specific embodiment of the present invention;

[0031] Figure 5 Schematic diagram of the structural principle of the low-temperature target platform in a specific embodiment of the present invention;

[0032] Figure 6 This is a schematic diagram of the component layout of the valve box in a specific embodiment of the present invention;

[0033] Figure 7 A schematic diagram of wafer transport in a specific embodiment of the present invention;

[0034] Figure 8 This is a flow chart of a low-temperature injection system process in a specific embodiment of the present invention;

[0035] Legend: 1. Remote power distribution cabinet; 2. Cold source; 3. Valve box; 4. Pre-cooling chamber; 5. First cryogenic target plate; 6. Adsorption power supply; 7. Cryogenic target platform; 8. Cooling ring; 9. Second cryogenic target plate; 10. First ADIO controller; 11. Second ADIO controller; 12. Third ADIO controller; 13. Industrial computer; 21. Cabinet; 101. Compressor; 102. First power input port; 103. First control input port; 104. First water and gas input port. 105, cold source distribution cabinet; 106, refrigeration unit; 107, output gas port; 108, return gas port; 109, first solenoid valve; 110, first safety valve; 111, first pressure transmitter; 112, first manual instrument valve; 113, second power input port; 114, second control input port; 115, second water and gas input port; 116, cold source operation console; 117, manual operation panel; 119, gas buffer tank; 201, target platform air inlet pipe; 202, Target stage air outlet pipe; 203, first cooling ring cylinder; 204, first temperature sensor; 205, first in-position sensor; 206, second in-position sensor; 207, second cooling ring cylinder; 208, air float shaft; 301, low temperature stop valve; 302, low temperature regulating valve; 303, second temperature sensor; 304, third temperature sensor; 305, second pressure transmitter; 306, third pressure transmitter; 307, first heater; 308, second heater; 309, second Safety valve; 310, vacuum gauge; 311, check valve; 312, second solenoid valve; 313, muffler; 314, second manual instrument valve; 315, first cold air output pipe; 316, first cold air return pipe; 317, second cold air output pipe; 318, second cold air return pipe; 319, cold air input port; 320, cold air output port; 401, left film library; 402, right film library; 403, right manipulator; 404, transmission orientation platform; 405, left manipulator. DETAILED DESCRIPTION

[0036] The present invention will be further described below in conjunction with the accompanying drawings and specific preferred embodiments, but the scope of protection of the present invention is not limited thereby.

[0037] In the description of the present invention, it should be understood that the terms "side", "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0038] In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, "multiple" means two or more, unless otherwise clearly and specifically defined.

[0039] Example

[0040] like Figure 1 As shown, the low-temperature implantation control system for an ion implanter of the present invention comprises: a remote power distribution cabinet 1, a cold source 2, a valve box 3, a pre-cooling chamber 4, a first low-temperature target disk 5, an adsorption power supply 6, a low-temperature target platform 7, a cooling ring 8, a second low-temperature target disk 9, a first ADIO controller 10, a second ADIO controller 11, a third ADIO controller 12, and an industrial computer 13. The output port of the remote power distribution cabinet 1 is connected to the cold source 2 via a power cable. The cold source 2 is connected to the valve box 3 via a 10 Gigabit network cable and a gas delivery pipeline, and the valve box 3 is connected to the pre-cooling chamber 4 and the low-temperature target platform 7 respectively via metal output pipelines. The first low-temperature target disk 5 is fixed in the pre-cooling chamber 4 by screws and is connected to the adsorption power supply 6 via an output cable. The cooling ring 8 and the second low-temperature target disk 9 are both fixed to the low-temperature target platform 7 by screws, and the second low-temperature target disk 9 is located above the cooling ring 8. The cold source 2 is connected to the first ADIO controller 10 via a control cable, the valve box 3 is connected to the second ADIO controller 11 via a control cable, and the adsorption power supply 6 is connected to the third ADIO controller 12 via a control cable. The first ADIO controller 10, the second ADIO controller 11, and the third ADIO controller 12 are each connected to the communication port of an industrial computer 13 via optical fiber. The software underlying the installation system of the industrial computer 13 is configured with temperature settings and temperature acquisition between 0°C and 1000°C. The optical fiber communication is dual-loop, divided into a primary and a secondary loop, to prevent abnormalities in one optical fiber communication path from affecting normal system operation.

[0041] In this embodiment, the remote power distribution cabinet 1 is connected to the cold source 2 via power cables. The input power supply parameters of the remote power distribution cabinet 1 are three-phase, five-wire, including three live wires, one neutral wire, and one ground wire. The input phase voltage is 120V AC, the input line voltage is 208V AC, the voltage accuracy is ±10%, and the output rated power is 45kVA. As the factory power supply access point, the remote power distribution cabinet 1 is equipped with an emergency stop control button for real-time input and output control to protect equipment and personnel. The remote power distribution cabinet 1 can also input power to the cold source 2 to enable operation.

[0042] In this embodiment, the cold source 2 is used to output cooling nitrogen to the valve box 3 for use in the system, and the temperature can be reduced to -150°C. The first ADIO controller 10 can realize the remote control function to turn on and off the cold source 2, collect the error signal of the cold source 2, and collect the working status signal of the cold source 2.

[0043] In this embodiment, the second ADIO controller 11 can remotely control various valve island switches in the valve box 3 and collect valve island status signals. The valve box 3 controls the working temperature of the pre-cooling cavity 4 by controlling the flow of nitrogen, and controls the working temperature of the low-temperature target 7 by controlling the flow of nitrogen.

[0044] In this embodiment, the first low-temperature target plate 5 fixes the wafer by electrostatic adsorption. After the first low-temperature target plate 5 cools down, the wafer is cooled by heat transfer in close contact with the wafer. Furthermore, the adsorption power supply 6 adopts a six-phase power supply, and the first low-temperature target plate 5 is connected to the six-phase power supply through an output cable. The six-phase power supply has a total of six outputs, which divides the first low-temperature target plate 5 into six blocks, with AC output, a frequency of 32HZ, and an output voltage of 0~1000V, which is used to fix the wafer by electrostatic adsorption to achieve the wafer cooling effect, while ensuring that the position of the wafer will not move during the cooling process. The third ADIO control 12 can realize remote on and off control of the six-phase power supply, and can monitor the power usage status in real time.

[0045] like Figure 2 、 Figure 3 and Figure 4 As shown, the cold source 2 includes a cabinet 21, which is equipped with a gas buffer tank 119, a cold source distribution cabinet 105, and a compressor 101, a refrigeration unit 106, a control valve group, a control input port, and a power input port connected to the cold source distribution cabinet 105. The compressor 101 compresses nitrogen gas to achieve condensation and evaporation, achieving a cooling effect and achieving the set temperature. The cold source distribution cabinet 105 is used to control electrical components, communicate with the first ADIO controller 10, and execute internal programs. The gas buffer tank 118 is connected to the refrigeration unit 106, which cooperates with the compressor 101 to generate cooling gas and forms a gas circuit with the output gas port 107 and the return gas port 108; the output gas port 107 and the return gas port 108 are respectively connected to the valve box 3 via gas delivery pipelines.

[0046] The control input ports include a first control input port 103 and a second control input port 114, which serve as communication control switches. The power input ports include a first power input port 102 and a second power input port 113, which are used to provide the required power input. The cabinet 21 also includes a first water and gas input port 104 and a second water and gas input port 115, which serve as nitrogen cooling water input interfaces.

[0047] In this embodiment, the cabinet 21 is further provided with a first solenoid valve 109, a first safety valve 110, a first pressure transmitter 111, and a first manual instrument valve 112. The first solenoid valve 109 is used to control the flow of gas during the cooling process of the cold source 2. The first safety valve 110 is used to protect the safety of the gas circuit. The first pressure transmitter 111 is used to monitor the pipeline pressure in real time and control the pipeline pressure output in real time. The first manual instrument valve 112 is used to monitor the temperature change of the gas during the cooling process in real time.

[0048] In this embodiment, a cold source operating console 116 and a manual operating screen 117 are provided on the front panel of the cabinet 21 , and one end of the cold source power distribution cabinet 105 is provided on the front panel of the cabinet 21 .

[0049] like Figure 5 As shown, the cryogenic target stage 7 includes a target stage air inlet pipe 201, a target stage air outlet pipe 202, a first cooling ring cylinder 203, a first temperature sensor 204, a second cooling ring cylinder 207, and an air bearing 208. Three first temperature sensors 204 are provided on the second cryogenic target disk 9. These three first temperature sensors 204 monitor temperature changes in real time and implement a closed-loop temperature control system. When the monitored real-time temperature reaches the set temperature, nitrogen is introduced at a constant flow rate to maintain the current temperature within ±1°C, and the machine begins ion beam injection. The air bearing 208 is fixed to the lower end of the cryogenic target stage 7 and is used to support the up and down movement of the cryogenic target stage 7. The target stage air inlet pipe 201 and target stage air outlet pipe 202 extend through the air bearing 208. One end of the target stage air inlet pipe 201 and target stage air outlet pipe 202 is connected to the cooling ring 8, while one end of the target stage air inlet pipe 201 and target stage air outlet pipe 202 is connected to the valve box 3, allowing cryogenic gas to enter and exit the cooling ring 8. The first cooling ring cylinder 203 and the second cooling ring cylinder 207 are located outside the cooling ring 8. When the system is in operation, the first cooling ring cylinder 203 and the second cooling ring cylinder 207 drive the cooling ring 8 to extend and wrap around the second low-temperature target disk 9. Low-temperature gas passes through the cooling ring 8, cooling the second low-temperature target disk 9 and the wafers attached thereto. In this embodiment, the second low-temperature target disk 9 is secured to the wafers by electrostatic attraction. The cooling ring 8 is driven by two cylinders. Three nitrogen outlets are provided on the cooling ring 8 to help lower the wafer temperature.

[0050] In this embodiment, a first in-position sensor 205 and a second in-position sensor 206 are provided on the cooling ring 8 for detecting the extension displacement of the first cooling ring cylinder 203 and the second cooling ring cylinder 207, so as to achieve precise control of the displacement of the cooling ring 8 to avoid damage to the second low-temperature target plate 9 and the wafer.

[0051] like Figure 6 As shown, the valve box 3 is provided with a low-temperature stop valve 301, a low-temperature regulating valve 302, a cold air return pipe, a cold air output pipe, a cold air input port 319 and a cold air output port 320. The cold air input port 319 and the cold air output port 320 are respectively connected to the cold source 2, and the cold air return pipe and the cold air output pipe are both connected to the pre-cooling cavity 4 and the low-temperature target platform 7.

[0052] Specifically, the cold air return pipe includes a first cold air return pipe 316 and a second cold air return pipe 318, and the cold air output pipe includes a first cold air output pipe 315 and a second cold air output pipe 317. The first cold air output pipe 315 and the first cold air return pipe 316 are respectively connected to the pre-cooling cavity 4, and the second cold air output pipe 317 and the second cold air return pipe 318 are respectively connected to the low-temperature target stage 7.

[0053] In this embodiment, the valve box 3 is also equipped with a temperature sensor, a pressure transmitter, a heater, a vacuum gauge 310, and a control valve assembly. The vacuum gauge 310 is used to monitor changes in the vacuum level in the valve box 3 in real time. Specifically, the temperature sensors include a second temperature sensor 303 and a third temperature sensor 304, respectively used to monitor the temperature of the nitrogen entering the pre-cooling chamber 4 and the cryogenic target 7. The pressure transmitters include a second pressure transmitter 305 and a third pressure transmitter 306, respectively used to monitor the pressure in the pipelines connecting to the pre-cooling chamber 4 and the cryogenic target 7 in real time and control the pipeline pressure output in real time. The heaters include a first heater 307 and a second heater 308, which can be used to heat the gas entering the pre-cooling chamber 4 and the cryogenic target 7, respectively, according to actual process requirements. The control valve assembly includes a second safety valve 309, a check valve 311, a second solenoid valve 312, a muffler 313, and a second manual instrument valve 314. The second safety valve 309 is used to protect the safety of the gas circuit, the check valve 311 is used to prevent gas backflow, the second solenoid valve 312 is used to control the gas on and off during the cooling process of the valve box 3, and the second manual instrument valve 314 is used to monitor the temperature change of the gas during the cooling process in real time.

[0054] In the secondary cooling process of the cooling system, when the temperature of the cold source 2 is lower than the set value, the pipeline and the valve box 3 are opened for cooling. The valve box 3 controls the gas output through the solenoid valve island and distributes two outputs. One gas is sent to the pre-cooling cavity 4 to initially cool the first low-temperature target plate 5 and the wafer adsorbed thereon. The initial cooling effects include: reducing the thermal expansion and contraction coefficient of the wafer; reducing the chance of wear on the back of the wafer and reducing the number of particle contamination on the finished wafer; the initial cooling treatment can reduce the cooling time of the wafer on the target table and improve the working efficiency of the machine; the other gas is sent to the low-temperature target table 7 to cool the second low-temperature target plate 9 and the wafer adsorbed thereon.

[0055] In this embodiment, after the system is installed, the power supply circuit breaker of the remote power distribution cabinet 1 is closed, the power supply of the cold source 2 is normal, the industrial computer 13 sets the start instruction and sends it to the cold source 2 through the first ADIO controller 10, the cooling process of the cold source 2 begins, and the real-time temperature of the cold source 2 is monitored at the same time. When the monitored temperature reaches the set temperature, the cooling of the cold source 2 is completed, that is, the first-level cooling cycle is completed; the industrial computer 13 sets the control instruction and sends it to the valve box 3 through the second ADIO controller 11, the valve box 3 and the pipeline start internal circulation, and the cooling process begins. A temperature sensor is provided inside the valve box 3 to monitor the cooling process in real time. When the temperature reaches the set temperature, the second-level cooling is completed; wait for the wafer to be transferred to the pre-cooling chamber 4 The first low-temperature target plate 5 in the six-phase power output adsorbs the wafer, and the valve box 3 starts to supply air to the pre-cooling chamber 4 and starts preliminary cooling. When the temperature reaches 80% of the set value, the valve box 3 shuts off the gas supply, and the wafer is transported to the second low-temperature target plate 9 by the robot. After electrostatic adsorption, the position of the wafer on the second low-temperature target plate 9 is fixed, and the two cylinders of the cooling ring 8 are extended. The valve box 3 is opened to cool the second low-temperature target plate 9. A temperature sensor is installed inside the second low-temperature target plate 9 to monitor the cooling temperature in real time. When the monitored temperature reaches the set value, the valve box 3 controls and adjusts the gas supply to maintain the wafer at the set value. The cooling ring cylinder is retracted, and ion implantation is performed on the wafer at a low temperature.

[0056] like Figure 7 As shown, a wafer transfer component is provided between the pre-cooling chamber 4 and the low-temperature target stage 7 for wafer transfer. The wafer transfer component includes a left wafer library 401, a right wafer library 402, a right robot 403, a transfer orientation platform 404, and a left robot 405. The left wafer library 401 and the right wafer library 402 are located outside the ion implanter. The right robot 403 and the left robot 405 are symmetrically arranged on either side of the transfer orientation platform 404, corresponding to the right wafer library 402 and the left wafer library 401, respectively.

[0057] Furthermore, the film transfer process of the right film library 402 is as follows:

[0058] Step 1: The right robot 403 moves the wafer from the right wafer library 402 to the transfer orientation platform 404;

[0059] Step 2: The right robot 403 moves the wafer from the transfer orientation stage 404 to the pre-cooling chamber 4;

[0060] Step 3: The right robot 403 moves the wafer from the pre-cooling chamber 4 to the low-temperature target stage 7 for ion implantation;

[0061] Step 4: The left manipulator 405 takes the wafer out from the low-temperature target stage 7 and temporarily places the wafer on the left manipulator 405;

[0062] Step 5: After there is no wafer on the transfer orientation stage 404, place it on the transfer orientation stage 404;

[0063] Step 6: The right robot 403 moves the wafer from the transfer orientation platform 404 to the right wafer library 402;

[0064] The film transfer process of the left film library 401 is as follows:

[0065] Step 1: The left robot 405 moves the wafer from the left wafer library 401 to the transfer orientation platform 404;

[0066] Step 2: The right robot 403 moves the wafer from the transfer orientation stage 404 to the pre-cooling chamber 4;

[0067] Step 3: The right robot 403 moves the wafer from the pre-cooling chamber 4 to the low-temperature target stage 7;

[0068] Step 4: The left robot 405 moves the wafer from the low-temperature target stage 7 to the left wafer library 401;

[0069] In this embodiment, a low-temperature implantation control method is applied to an ion implanter, and the control system operation process is remotely operated, including the following steps:

[0070] Step S1: The engineering machine 13 starts the cooling source 2 for cooling. After the cooling is completed, the valve box 3 is opened to distribute the cooling gas.

[0071] Step S2, cooling the first low-temperature target plate 5 in the pre-cooling chamber 4 to a set temperature;

[0072] Step S3, cooling the second low-temperature target disk 9 in the low-temperature target stage 7 to a set temperature;

[0073] Step S4: controlling the temperature of the second low-temperature target plate 9 to a set value through a closed-loop temperature control method, and then performing an ion implantation process;

[0074] Step S5: After the ion implantation is completed, the wafer is transferred back to the wafer library by a robot arm, and the implanted wafer is subjected to a temperature-recovery treatment inside the wafer library. When the wafer temperature reaches room temperature, the entire implantation process is completed.

[0075] like Figure 8 As shown in the figure, the cooling process of the wafer in the system is:

[0076] (1) Cooling down the interior of the cold source 2 to achieve primary circulation of the cold source 2 and internal temperature circulation of the cold source 2;

[0077] (2) After the first-level circulation of the cold source 2 is completed, the valve box 3 and the pipeline second-level cooling circulation are opened, and the cooling function is established;

[0078] (3) After the wafer is transferred to the pre-cooling chamber 4, the valve box 3 is opened, and cooling nitrogen is introduced into the pre-cooling chamber 4 to cool the wafer. The temperature of the first low-temperature target plate 5 is reduced to 80% of the ion implantation set temperature, and the temperature accuracy is controlled within 1°C;

[0079] (4) The wafer is transferred to the transmission orientation stage 404 for orientation, and the wafer injection angle is adjusted to control the beam flow so that it can be accurately injected into the wafer;

[0080] (5) After the wafer is oriented, it is transferred to the low-temperature target stage 7 for cooling;

[0081] (6) After the wafer temperature reaches the set value, ion implantation begins;

[0082] (7) After the wafer begins ion implantation, it is transferred back to the wafer storage for wafer temperature recovery.

[0083] (8) After the wafer is warmed up, the entire low-temperature injection process is completed and the wafer is transferred back to the wafer box.

[0084] This embodiment solves the problem of low-temperature implantation. When ions are implanted at low temperatures, the ions have a weak diffusion capacity, thus meeting the requirements of directional and positioned ion implantation for specialized product implantation processes. This control system fills a gap in ion implantation technology and meets the market's demand for diversified ion implantation process requirements.

[0085] The above description is merely a preferred embodiment of the present invention. The scope of protection of the present invention is not limited to the above embodiment. All technical solutions based on the concept of the present invention are within the scope of protection of the present invention. It should be noted that for those skilled in the art, various improvements and modifications that do not depart from the principles of the present invention should also be considered within the scope of protection of the present invention.

Claims

1. A low temperature implantation control system for an ion implanter, characterized in that: include: A remote power distribution cabinet (1), a cold source (2), a valve box (3), a pre-cooling cavity (4), a first low-temperature target disk (5), an adsorption power supply (6), a low-temperature target platform (7), a cooling ring (8), a second low-temperature target disk (9), a first ADIO controller (10), a second ADIO controller (11), a third ADIO controller (12) and an industrial computer (13); the output port of the remote power distribution cabinet (1) is connected to the cold source (2) through a power cable; the cold source (2) is connected to the valve box (3) through a network cable and a gas delivery pipeline, and the valve box (3) is connected to the pre-cooling cavity (4) and the low-temperature target platform (7) through an output pipeline; the first low-temperature target disk (5) is fixed in the pre-cooling cavity The cooling ring (8) and the second low-temperature target plate (9) are both fixed on the low-temperature target platform (7), and the second low-temperature target plate (9) is located above the cooling ring (8); the cold source (2) is connected to the first ADIO controller (10) through a control cable, the valve box (3) is connected to the second ADIO controller (11) through a control cable, the adsorption power supply (6) is connected to the third ADIO controller (12) through a control cable, and the first ADIO controller (10), the second ADIO controller (11) and the third ADIO controller (12) are respectively connected to the communication port of the industrial computer (13) through optical fibers; The low-temperature target platform (7) comprises a target platform air inlet pipe (201), a target platform air outlet pipe (202), a first cooling ring cylinder (203), a first temperature sensor (204), a second cooling ring cylinder (207) and an air-floating shaft (208); the first temperature sensor (204) is arranged in the second low-temperature target plate (9) to perform closed-loop temperature control; the air-floating shaft (208) is fixed to the lower end of the low-temperature target platform (7) and is used to support the low-temperature target platform (7) to move up and down, the target platform air inlet pipe (201) and the target platform air outlet pipe (202) pass through the air-floating shaft (208), and the target platform air inlet pipe (201) and the target platform air outlet pipe (202) pass through the air-floating shaft (208). 01) and one end of the target platform air outlet pipe (202) are connected to the cooling ring (8), and one end of the target platform air inlet pipe (201) and the target platform air outlet pipe (202) are connected to the valve box (3) to enable low-temperature gas to enter and exit the cooling ring (8); the first cooling ring cylinder (203) and the second cooling ring cylinder (207) are located outside the cooling ring (8); when the system is running, the first cooling ring cylinder (203) and the second cooling ring cylinder (207) drive the cooling ring (8) to extend and wrap the second low-temperature target disk (9), and the low-temperature gas passes through the cooling ring (8) to cool the second low-temperature target disk (9) and the adsorbed wafer.

2. The low temperature implantation control system for an ion implanter according to claim 1, characterized in that: The cold source (2) comprises a cabinet (21), wherein a gas buffer tank (119), a cold source power distribution cabinet (105), and a compressor (101), a refrigeration unit (106), a control valve group, a control input port, and a power input port connected to the cold source power distribution cabinet (105) are provided in the cabinet (21); the gas buffer tank (118) is connected to the refrigeration unit (106), and the refrigeration unit (106) cooperates with the compressor (101) to generate cooling gas and forms a gas loop with the output gas port (107) and the return gas port (108); the output gas port (107) and the return gas port (108) are respectively connected to the valve box (3) through a gas delivery pipeline.

3. The low temperature implantation control system for an ion implanter according to claim 2, characterized in that: The cabinet (21) is further provided with a first solenoid valve (109), a first safety valve (110), a first pressure transmitter (111) and a first manual instrument valve (112); the first solenoid valve (109) is used to control the on-off of the gas during the cooling process of the cold source (2); the first safety valve (110) is used to protect the safety of the gas circuit; the first pressure transmitter (111) is used to monitor the pipeline pressure in real time and control the pipeline pressure output in real time; and the first manual instrument valve (112) is used to monitor the temperature change of the gas during the cooling process in real time.

4. The low temperature implantation control system for an ion implanter according to claim 3, characterized in that: A cold source operating table (116) and a manual operating screen (117) are provided on the front panel of the cabinet (21), and one end of the cold source power distribution cabinet (105) is provided on the front panel of the cabinet (21).

5. The low temperature implantation control system for an ion implanter according to claim 1, characterized in that: The cooling ring (8) is provided with a first in-position sensor (205) and a second in-position sensor (206) for detecting the extension displacement of the first cooling ring cylinder (203) and the second cooling ring cylinder (207).

6. The low temperature implantation control system for an ion implanter according to claim 1, characterized in that: The valve box (3) is provided with a low-temperature stop valve (301), a low-temperature regulating valve (302), a cold air return pipe, a cold air output pipe, a cold air input port (319) and a cold air output port (320), the cold air input port (319) and the cold air output port (320) are respectively connected to the cold source (2), and the cold air return pipe and the cold air output pipe are both connected to the pre-cooling cavity (4) and the low-temperature target platform (7).

7. The low temperature implantation control system for an ion implanter according to claim 6, characterized in that: The valve box (3) is also provided with a temperature sensor, a pressure transmitter, a heater, a vacuum gauge (310) and a control valve group.

8. The low temperature implantation control system for an ion implanter according to any one of claims 1 to 7, characterized in that: A wafer library transmission component is provided between the pre-cooling chamber (4) and the low-temperature target platform (7) for realizing wafer transmission; the wafer library transmission component comprises a left wafer library (401), a right wafer library (402), a right manipulator (403), a transmission orientation platform (404) and a left manipulator (405); the left wafer library (401) and the right wafer library (402) are arranged outside the ion implanter; the right manipulator (403) and the left manipulator (405) are symmetrically arranged on both sides of the transmission orientation platform (404), and correspond to the right wafer library (402) and the left wafer library (401), respectively.

9. A low-temperature implantation control method for an ion implanter based on the low-temperature implantation control system according to any one of claims 1 to 8, characterized in that: The following steps are involved: Step S1, the engineering machine (13) turns on the cold source (2) for cooling, and after the cooling is completed, the valve box (3) is opened to distribute the cooling gas; Step S2, cooling the first low-temperature target disk (5) in the pre-cooling cavity (4) to a set temperature; Step S3, cooling the second low-temperature target disk (9) in the low-temperature target stage (7) to a set temperature; Step S4, controlling the temperature of the second low-temperature target disk (9) to a set value through a temperature closed-loop control method, and then performing an ion implantation process; Step S5: After the ion implantation is completed, the wafer is transferred back to the wafer library by a robot arm, and the implanted wafer is subjected to a temperature-recovery treatment inside the wafer library. When the wafer temperature reaches room temperature, the entire implantation process is completed.

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