Drive energy acquisition system and drive energy acquisition method for power semiconductor devices

Abstract

The present application relates to a driving energy acquisition system and a driving energy acquisition method for a power semiconductor device. The system includes an energy storage unit for providing a first voltage, a current limiting unit electrically connected to the energy storage unit for limiting the current of the power semiconductor device module and storing the energy released from the energy storage unit, a voltage stabilizing unit electrically connected to the energy storage unit for stabilizing the energy storage unit, an auxiliary energy acquisition unit electrically connected to the current limiting unit and the voltage stabilizing unit respectively for acquiring energy from the current limiting unit and providing a second voltage, and a conversion and driving unit electrically connected to the energy storage unit and the auxiliary energy acquisition unit respectively for converting the first voltage to drive the power semiconductor device in the power semiconductor device module when acquiring the first voltage, and converting the second voltage to drive the power semiconductor device when acquiring the second voltage. The system disclosed in the present application reduces the power requirement for driving and provides backup power supply for driving, significantly improving the reliability and stability of driving energy acquisition.

Description

Technical Field

[0001] This application relates to the technical field of power semiconductor devices, and particularly to a driving energy extraction system and method for power semiconductor devices. Background Art

[0002] The modular multilevel voltage source converter (MMVSC), as an important conversion device in the field of power electronics, is widely used in high-voltage direct current transmission (HVDC), renewable energy access, electric vehicle charging stations and other fields. Among them, the gate turn-off thyristor, as a key power switch, requires a large driving power to ensure its reliable turn-off and turn-on. In the prior art, the driving circuit is powered by the bus capacitor through a DC / DC converter. However, this method is difficult to implement, costly, and has large losses under high voltage conditions. Specifically, the input voltage of the DC / DC converter needs to reach the breakdown voltage of the gate turn-off thyristor (usually 4.5 kV, 6.5 kV, 8.5 kV), and it is difficult to achieve high power. In addition, as a key driving power supply, the failure of the DC / DC converter will not only cause the interruption of the driving power, but also may cause the entire converter to get out of control, making it difficult to guarantee the reliability and stability of the power system. Summary of the Invention

[0003] This application provides a driving energy extraction system and method for power semiconductor devices to solve the problem that it is difficult to achieve high power of power semiconductor devices due to the excessive power requirement of the DC / DC converter in the related art.

[0004] According to one aspect of this application, a driving energy extraction system for power semiconductor devices is provided, which is electrically connected to a power semiconductor device module. The driving energy extraction system includes: an energy storage unit for providing a first voltage; a current limiting unit electrically connected to the energy storage unit for limiting the current of the power semiconductor device module and storing the energy released from the energy storage unit; a voltage stabilizing unit electrically connected to the energy storage unit for stabilizing the energy storage unit; an auxiliary energy extraction unit electrically connected to the current limiting unit and the voltage stabilizing unit respectively for extracting energy from the current limiting unit and providing a second voltage; a conversion and driving unit electrically connected to the energy storage unit and the auxiliary energy extraction unit respectively for converting the first voltage to drive the power semiconductor device module when obtaining the first voltage, and converting the second voltage to drive the power semiconductor device module when obtaining the second voltage.

[0005] Optionally, the conversion and drive unit includes: a drive unit electrically connected to the power semiconductor device module for driving the power semiconductor device module; a first conversion unit electrically connected to the energy storage unit and the drive unit respectively for converting the first voltage into a third voltage so that the drive unit drives the power semiconductor devices in the power semiconductor device module; and a second conversion unit electrically connected to the auxiliary energy extraction unit and the drive unit respectively for converting the second voltage into a fourth voltage so that the drive unit drives the power semiconductor devices.

[0006] Optionally, the auxiliary energy extraction unit includes: a first energy storage module for storing energy for the auxiliary energy extraction unit; a switch module electrically connected to the first energy storage module for connecting or disconnecting the auxiliary energy extraction unit and the voltage stabilizing unit; and a voltage stabilizing control module electrically connected to the first energy storage module and the switch module respectively for providing a first threshold voltage. When the second voltage is greater than or equal to the first threshold voltage, the first energy storage module is stopped from charging, and the switch module connects the first energy storage module and the voltage stabilizing unit.

[0007] Optionally, the voltage stabilizing control module includes a first voltage stabilizing diode and a first resistor, the switch module includes a first thyristor, and the first energy storage module includes a first capacitor and a first diode; the auxiliary energy extraction unit further includes a first port, a second port, a third port, and a fourth port; the first port is electrically connected to the current limiting unit, the first voltage stabilizing diode, the first diode, and the first thyristor respectively; the second port is electrically connected to the voltage stabilizing unit, the first resistor, the first thyristor, and the first capacitor respectively; the third port is electrically connected to the conversion and drive unit, the first diode, and the first capacitor respectively; the fourth port is electrically connected to the conversion and drive unit, the first capacitor, the first thyristor, and the first resistor respectively; the first voltage stabilizing diode is further electrically connected to the first resistor, the first thyristor, and the first diode respectively; the first capacitor is further electrically connected to the first diode; and the first thyristor is further electrically connected to the first resistor, the first voltage stabilizing diode, and the first diode respectively.

[0008] Optionally, the voltage stabilizing unit includes a second capacitor and a second resistor. The second capacitor is electrically connected to the power semiconductor device module, the energy storage unit, the second resistor, and the auxiliary energy extraction unit respectively, and the second resistor is further electrically connected to the current limiting unit and the energy storage unit respectively.

[0009] Optionally, the energy storage unit includes a third capacitor. One end of the third capacitor is electrically connected to the conversion and drive unit, the current limiting unit, and the second resistor respectively, and the other end of the third capacitor is electrically connected to the second capacitor and the power semiconductor device module respectively.

[0010] Optionally, the current limiting unit includes a first inductor. One end of the first inductor is electrically connected to the conversion and drive unit, the energy storage unit, and the voltage stabilizing unit respectively, and the other end of the first inductor is electrically connected to the auxiliary energy extraction unit and the power semiconductor device module respectively.

[0011] Optionally, the drive energy extraction system further includes a switching unit. The switching unit is electrically connected between the auxiliary energy extraction unit and the conversion and drive unit, and between the energy storage unit and the conversion and drive unit, and is configured to: connect the energy storage unit to the first conversion unit and disconnect the connection between the conversion and drive unit and the auxiliary energy extraction unit, so that the conversion and drive unit obtains a first voltage; in the case where the conversion and drive unit obtains a second voltage, connect the auxiliary energy extraction unit to the second conversion unit and disconnect the connection between the conversion and drive unit and the energy storage unit, so that the conversion and drive unit obtains a second voltage.

[0012] According to another aspect of the present application, there is provided a method for driving and extracting energy of a power semiconductor device, which is applied to the above-mentioned drive energy extraction system of the power semiconductor device. The drive energy extraction system is electrically connected to the power semiconductor device module. The method for driving and extracting energy includes: controlling the energy storage unit in the drive energy extraction system to provide a first voltage to supply energy to the conversion and drive unit in the drive energy extraction system, and enabling the current limiting module in the drive energy extraction system to store a first energy, where the first energy is a part of the energy released by the energy storage unit, and the auxiliary energy extraction unit in the drive energy extraction system extracts energy from the current limiting module; controlling the auxiliary energy extraction unit to provide a second voltage to supply energy to the conversion and drive unit, where the second energy in the auxiliary energy extraction unit is released into the voltage stabilizing unit in the drive energy extraction system, and the second energy is the remaining part of the first energy except for the part stored in the auxiliary energy extraction unit.

[0013] Optionally, the conversion and drive unit includes: a drive unit electrically connected to the power semiconductor device module; a first conversion unit electrically connected to the energy storage unit and the drive unit respectively; a second conversion unit electrically connected to the auxiliary energy extraction unit and the drive unit respectively; controlling the energy storage unit in the drive energy extraction system to provide a first voltage to supply energy to the conversion and drive unit in the drive energy extraction system, including: controlling the energy storage unit to supply energy to the first conversion unit, so that the first conversion unit converts the first voltage into a third voltage, thereby driving the power semiconductor device in the power semiconductor device module through the drive unit; controlling the auxiliary energy extraction unit to provide a second voltage to supply energy to the conversion and drive unit, including: when it is detected that the first conversion unit fails or the output voltage is lower than a preset value, controlling the auxiliary energy extraction unit to supply energy to the second conversion unit, so that the second conversion unit converts the second voltage into a fourth voltage, thereby driving the power semiconductor device through the drive unit.

[0014] The drive energy extraction system and its drive energy extraction method for the power semiconductor device provided by this application. The introduction of the auxiliary energy extraction unit can extract part of the energy from the current limiting unit, effectively save this part of the energy and supply energy to the conversion and drive unit, realizing the reuse of energy. Furthermore, it effectively reduces the power demand for the conversion and drive unit, enabling the conversion and drive unit to only bear the base state drive power, while the peak power demand is borne by the auxiliary energy extraction unit, significantly reducing the power specification of the conversion and drive unit, thereby reducing the difficulty and cost of realizing high power of the device. And, by setting the energy storage unit and the auxiliary energy extraction unit, the energy supply and conversion in different working states are realized, improving the stability and reliability of the drive system. During normal operation, the system is mainly powered by the energy storage unit, and when the voltage of the energy storage unit is insufficient or there is a connection fault between the energy storage unit and the conversion and drive unit, the auxiliary energy extraction unit can independently provide the second voltage as a backup source for driving to ensure the continuity of the drive voltage and the normal operation of the power semiconductor device or to perform fault handling. The current limiting unit stores electromagnetic energy during the switching operation of the power semiconductor device module, and the auxiliary energy extraction unit can intercept this part of the energy from the current limiting unit, reducing the energy waste dissipated in the form of heat, thereby simplifying the thermal management and improving the system efficiency. In addition, the setting of the current limiting unit and the voltage stabilizing unit further enhances the safety and voltage stability of the system, effectively avoiding the damage to the power semiconductor device caused by overcurrent and voltage fluctuations, and improving the performance and application range of the overall system. Description of the Drawings

[0015] The drawings described herein are used to provide a further understanding of the present application and form a part of the present application. The schematic embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation to the present application. In the drawings:

[0016] Figure 1 is a schematic structural diagram of a driving energy extraction system for a power semiconductor device provided in an embodiment of the present application;

[0017] Figure 2 is a schematic circuit diagram of a driving energy extraction system for a power semiconductor device provided in an embodiment of the present application;

[0018] Figure 3 is a schematic circuit diagram of an auxiliary energy extraction unit provided in an embodiment of the present application;

[0019] Figure 4 is a schematic circuit diagram of another driving energy extraction system for a power semiconductor device provided in an embodiment of the present application.

[0020] Figure 5 is a schematic flowchart of a driving energy extraction method for a power semiconductor device provided in an embodiment of the present application;

[0021] Figure 6 is a schematic flowchart of another driving energy extraction method for a power semiconductor device provided in an embodiment of the present application.

[0022] Among them, the above-mentioned drawings include the following reference numerals:

[0023] 10, energy storage unit; 20, current limiting unit; 30, auxiliary energy extraction unit; 301, first energy storage module; 302, switch module; 303, voltage stabilization control module; 40, voltage stabilization unit; 50, conversion and driving unit; 501, first conversion unit; 502, second conversion unit; 503, driving unit; 60, power semiconductor device module; 70, switching unit. Detailed implementation manners

[0024] It should be noted that, without conflict, the embodiments in the present application and the features in the embodiments may be combined with each other. The present application will be described in detail below with reference to the drawings and in conjunction with the embodiments.

[0025] In order to enable those skilled in the art to better understand the solution of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0026] It should be noted that the terms "first", "second", etc. in the description, claims and above-mentioned drawings of this application are used to distinguish similar objects, and do not necessarily describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present application described here can be implemented in an order other than those illustrated or described here. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device including a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0027] As introduced in the background art, as a key power switch, a turn-off thyristor requires a large driving power to ensure its reliable turn-off and turn-on. The prior art powers the driving circuit through a bus capacitor via a DC / DC converter. This method is difficult to implement, costly, and has high losses under high voltages. As a key driving power supply, the failure of the DC / DC converter will not only cause the interruption of the driving power, but may also cause the entire converter to get out of control, making it difficult to guarantee the reliability and stability of the power system.

[0028] According to an embodiment of the present application, there is provided a driving energy acquisition system for a power semiconductor device, which is electrically connected to a power semiconductor device module 60, as Figure 1 shown. The driving energy acquisition system includes: an energy storage unit 10 for providing a first voltage; a current limiting unit 20 electrically connected to the energy storage unit 10 for limiting the current of the power semiconductor device module 60 and storing the energy released from the energy storage unit 10; a voltage stabilizing unit 40 electrically connected to the energy storage unit 10 for stabilizing the energy storage unit 10; an auxiliary energy acquisition unit 30 electrically connected to the current limiting unit 20 and the voltage stabilizing unit 40 respectively for acquiring energy from the current limiting unit 20 and providing a second voltage; a conversion and driving unit 50 electrically connected to the energy storage unit 10 and the auxiliary energy acquisition unit 30 respectively for converting the first voltage to drive the power semiconductor device module 60 when acquiring the first voltage, and converting the second voltage to drive the power semiconductor device module 60 when acquiring the second voltage.

[0029] In this embodiment, during the state transition of the power semiconductor device, the auxiliary energy extraction unit 30 can intercept and utilize the energy stored in the current limiting unit 20 to power the conversion and drive unit 50. Then, the conversion and drive unit 50 no longer solely relies on the first voltage provided by the energy storage unit 10 as the drive power supply, but rather alleviates its power burden to a certain extent. As a supplement, the second voltage provided by the auxiliary energy extraction unit 30 reduces the design difficulty and cost of the high-power conversion and drive unit 50. This embodiment reduces the power requirement of the main conversion and drive unit 50, making the design and manufacturing of the conversion and drive unit 50 simpler and the cost lower. This architecture reduces the size and complexity of the main drive unit in the conversion and drive unit 50, and also avoids the design and manufacturing challenges brought about by the excessive power of the conversion and drive unit 50, thereby reducing the implementation difficulty and cost of the entire system.

[0030] Moreover, the independent power supply ability of the auxiliary energy extraction unit 30 ensures that even if the main conversion and drive unit 50 fails or malfunctions, the drive system can still maintain basic operation. It can provide the necessary second voltage to drive the power semiconductor device, enabling the system to continue operating and maintaining system stability at least for a short or limited period of time, greatly enhancing the reliability of the system.

[0031] Specifically, during the conduction and turn-off processes of the power semiconductor device, the current limiting unit 20 stores electromagnetic energy within it. This energy is often not fully utilized but dissipated in some form. However, the auxiliary energy extraction unit 30 in this application can effectively recover this part of the energy, convert it into the second voltage, and use it to drive the power semiconductor device. This process not only avoids energy waste but also reduces the heat generated due to energy dissipation, significantly improving the energy utilization efficiency of the system and simplifying the thermal management.

[0032] In some alternative embodiments, as Figure 2 shown, the conversion and drive unit 50 includes: a drive unit 503, electrically connected to the power semiconductor device module 60, for driving the power semiconductor device (S 1 , S 2); The first conversion unit 501 is electrically connected to the energy storage unit 10 and the drive unit 503 respectively, and is used to convert the first voltage into a third voltage so that the drive unit 503 drives the power semiconductor device module 60; The second conversion unit 502 is electrically connected to the auxiliary energy extraction unit 30 and the drive unit 503 respectively, and is used to convert the second voltage into a fourth voltage so that the drive unit 503 drives the power semiconductor device module 60. When the conversion and drive unit 50 fails and the first conversion unit 501 cannot normally convert the first voltage to drive the power semiconductor device, the auxiliary energy extraction unit 30 can serve as a backup energy source to provide the second voltage, and the second conversion unit 502 is responsible for converting the second voltage into a fourth voltage to drive the power semiconductor device. This design ensures that even if the main drive path fails, the system can still maintain basic operation, perform necessary fault handling or switch to a safe state, enabling the system to flexibly switch the energy source under different working conditions, thus significantly improving the reliability of the entire system.

[0033] Specifically, as Figure 2 shown, the first conversion unit 501 and the second conversion unit 502 include, but are not limited to, DC / DC converters, which are selected by those skilled in the art according to actual needs, and the present application does not make specific limitations.

[0034] Specifically, as Figure 2 shown, the drive unit 503 includes, but is not limited to, two drive modules, which are selected by those skilled in the art according to actual needs, and the present application does not make specific limitations.

[0035] In some alternative embodiments, as Figures 2 to 3As shown in the figure, the auxiliary energy extraction unit 30 includes: a first energy storage module 301 for storing energy for the auxiliary energy extraction unit 30; a switch module 302 electrically connected to the first energy storage module 301 for connecting or disconnecting the auxiliary energy extraction unit 30 from the voltage stabilizing unit 40; a voltage stabilizing control module 303 electrically connected to the first energy storage module 301 and the switch module 302 respectively for providing a first threshold voltage, stopping the charging of the first energy storage module 301 when the second voltage is greater than or equal to the first threshold voltage, and causing the switch module 302 to connect the auxiliary energy extraction unit 30 and the voltage stabilizing unit 40. The first energy storage module 301 can extract and store energy from the current limiting unit 20. As the energy of the current limiting unit 20 is transferred, the first energy storage module 301 is gradually charged until the energy stored in it reaches a level sufficient to be converted into the second voltage. At this time, the switch module 302 is turned on under the control of the voltage stabilizing control module 303 to connect the auxiliary energy extraction unit 30 to the voltage stabilizing unit 40, so that the excess energy can be released to the voltage stabilizing unit 40. This design can automatically adjust the charging and discharging process of the auxiliary energy extraction unit 30, avoid damage to the first energy storage module 301 caused by overcharging or over-discharging, extend the service life of the first energy storage module 301, and thus improve the reliability of the entire system.

[0036] In some alternative embodiments, as Figures 2 to 3 shown, the voltage stabilizing control module 303 includes a first voltage stabilizing diode D 4 and a first resistor R 1 , the switch module 302 includes a first thyristor S 3 , the first energy storage module 301 includes a first capacitor C 1 and a first diode D 3 ; the auxiliary energy extraction unit 30 further includes a first port T 3 , a second port T 4 , a third port T 5 and a fourth port T 6 ; wherein, the first port T 3 is electrically connected to the current limiting unit 20, the first voltage stabilizing diode D 4 , the first diode D 3 and the first thyristor S 3 respectively; the second port T 4 is electrically connected to the voltage stabilizing unit 40, the first resistor R 1 , the first thyristor S 3 and the first capacitor C 1 respectively; the third port T 5 is electrically connected to the conversion and drive unit 50, the first diode D 3 and the first capacitor C 1 respectively; the fourth port T 6 is electrically connected to the conversion and drive unit 50, the first capacitor C 1, the first thyristor S 3 and the first resistor R 1 are electrically connected; the first zener diode D 4 is respectively electrically connected to the first resistor R 1 , the first thyristor S 3 , the first port T 3 and the first diode D 3 ; the first capacitor C 1 is respectively electrically connected to the second port T 4 , the third port T 5 , the fourth port T 6 and the first diode D 3 ; the first thyristor S 3 is respectively electrically connected to the first port T 3 , the second port T 4 , the fourth port T 6 , the first resistor R 1 , the first zener diode D 4 and the first diode D 3 are electrically connected.

[0037] In this embodiment, the current limiting module injects current into the first capacitor C 3 through the first diode D, and the voltage of the first capacitor C 1 rises. When the voltage of the first capacitor C 1 reaches the operating threshold of the first zener diode D 1 , that is, the second voltage, the small current of the first zener diode D 4 generates a voltage on the first resistor R 4 and triggers the first thyristor S 1 to conduct, and the remaining current enters the voltage stabilizing unit 40. This process repeats, and the voltage of the first capacitor C 3 remains stable and supplies power to the drive through the second conversion unit 502. The design of the first capacitor C1, the first zener diode D 1 and the first thyristor S 4 forms an independent energy supply path. In the case where the main conversion and drive unit 50 cannot work properly, the auxiliary energy extraction unit 30 can continue to provide the stabilized second voltage, which is converted into the fourth voltage through the second conversion unit 502 to continue driving the power semiconductor device. Through this circuit design, when the drive unit 503 needs high-power drive, it can utilize this part of the pre-stored energy instead of relying entirely on the power output of the main energy storage unit 10, and can achieve precise energy management and automatic voltage control. Exemplarily, the above-mentioned first thyristor S 3 is a turn-off thyristor, as shown in 3 , the first thyristor S Figure 3 3 ​The anodes are respectively connected to the positive electrode of the first diode D 3 and the negative electrode of the first voltage stabilizing diode D 4 The cathode of the first thyristor S 3 is connected to one end of the first resistor R 1 The control electrode of the first thyristor S 3 is respectively connected to the other end of the first resistor R 1 and the positive electrode of the first voltage stabilizing diode D 4 is connected.

[0038] Exemplarily, the voltage stabilizing control module in the auxiliary energy extraction unit further includes an overvoltage protection diode, and the overvoltage protection diode is connected in parallel across both ends of the first capacitor. By connecting the overvoltage protection diode in parallel, it can be ensured that when the voltage stabilizing diode fails or the system voltage suddenly rises, the first capacitor will not be damaged due to overvoltage. Among them, the overvoltage protection diode is connected in parallel across both ends of the first capacitor. Under normal operating voltage, the overvoltage protection diode is in the cut-off state and will not affect the charging process of the first capacitor. When the voltage of the first capacitor exceeds the third threshold voltage, the overvoltage protection diode conducts, releasing the excess energy to the voltage stabilizing unit to prevent the first capacitor from overcharging. The third threshold voltage is higher than the operating voltage of the voltage stabilizing diode and lower than the maximum safe voltage of the first capacitor, so as to ensure that when the voltage stabilizing diode fails or other abnormalities cause the voltage of the first capacitor to rise abnormally, the overvoltage protection diode can conduct in time to avoid overvoltage damage to the first capacitor.

[0039] In the above specific implementation manner, by setting the overvoltage protection diode, it is ensured that the first capacitor can respond quickly under overvoltage conditions, and at the same time, it does not cause an additional burden on the system during normal operation, ensuring the stability and reliability of the auxiliary energy extraction unit, and at the same time providing additional safety protection for the entire system. This design not only reduces the system risk caused by failures, but also optimizes the energy management strategy, improving the overall energy efficiency and thermal management performance of the system.

[0040] In some alternative implementation manners, as Figure 2 shown, the voltage stabilizing unit 40 includes a second capacitor C CL and a second resistor R s , the second capacitor C CL is respectively electrically connected to the power semiconductor device module 60, the energy storage unit 10, the second resistor R s and the auxiliary energy extraction unit 30, and the second resistor R s is also respectively electrically connected to the current limiting unit 20 and the energy storage unit 10. The electromagnetic energy stored in the auxiliary energy extraction unit 30 flows into and is stored in the second capacitor C CL , causing the potential of the second capacitor C CL to rise and exceed the potential of the energy storage unit 10, and the excess energy reflected by the potential difference passes through the second resistor R sDissipated as heat energy, in this design, the excess electromagnetic energy is converted into heat energy to improve the voltage stability of the system and reduce the impact of voltage fluctuations on power semiconductor devices.

[0041] In some alternative embodiments, as Figure 2 shown, the energy storage unit 10 includes a third capacitor C DC , one end of the third capacitor C DC is electrically connected to the conversion and drive unit 50, the current limiting unit 20, and the second resistor R s respectively, and the other end of the third capacitor C DC is electrically connected to the second capacitor C CL and the power semiconductor device module 60 respectively. When the power semiconductor device switches its switch state to the first state, the third capacitor C DC discharges externally through the current limiting unit 20. The current limiting unit 20 has current passing through and stores electromagnetic energy. At the same time, the third capacitor C DC powers the drive through the first conversion unit 501. The third capacitor C DC supports the stability of the DC bus voltage in the circuit, filters out high-frequency noise in the input or output voltage, smoothes the voltage waveform, and in the transient process of the circuit, such as when the load changes or the power supply fluctuates, the third capacitor C DC can absorb or release energy, playing a buffering role to avoid sharp changes in the voltage in the circuit and protect other components in the circuit.

[0042] In some alternative embodiments, as Figure 2 shown, the current limiting unit 20 includes a first inductor L i , one end of the first inductor L i is electrically connected to the conversion and drive unit 50, the energy storage unit 10, and the voltage stabilizing unit 40 respectively, and the other end of the first inductor L i is electrically connected to the auxiliary energy extraction unit 30 and the power semiconductor device module 60 respectively. In the first inductor L i , the current cannot change instantaneously, hindering the sudden change of the current. Therefore, it can limit the rapid rise of the current at the moment when the power semiconductor device conducts, thereby preventing the device from being subjected to excessive current impact and protecting the device from damage. At the same time, the first inductor L i accumulates the electromagnetic energy released during the switching process of the power semiconductor device, providing an energy source for the auxiliary unit.

[0043] Specifically, as Figure 2 and Figure 3 shown, the voltage stabilizing unit 40 may include a second capacitor C CL and a second resistor R s , the energy storage unit 10 may include a third capacitor C DC , and the current limiting unit 20 includes a first inductor L i, the first inductor L i One end of each is electrically connected to the conversion and drive unit 50, the second resistor R s and the third capacitor C DC One end of the first inductor L i is electrically connected to the first port T of the auxiliary energy extraction unit 30 3 and the power semiconductor device module 60.

[0044] Exemplarily, as Figure 4 shown, a drive energy extraction system for a power semiconductor device applying a full-bridge module is also shown, wherein each arm of the power semiconductor device module 60 includes two turn-off thyristors and their corresponding antiparallel diodes. Among them, the turn-off thyristors S 1 , S 2 , S 5 , S 6 and their antiparallel diodes D 1 , D 2 , D 5 , D 6 form an arm. That is, the turn-off thyristor S 1 is in parallel with the diode D 1 , the turn-off thyristor S 2 is in parallel with the diode D 2 , the turn-off thyristor S 5 is in parallel with the diode D 5 , the turn-off thyristor S 6 is in parallel with the diode D 6 , the part where the turn-off thyristor S 1 is in parallel with the diode D 1 is in series with the part where the turn-off thyristor S 5 is in parallel with the diode D 5 to form an arm. The part where the turn-off thyristor S 2 is in parallel with the diode D 2 is in series with the part where the turn-off thyristor S 6 is in parallel with the diode D 6 to form another arm. Two DC / DC converters independently control the drive unit 503. The drive unit 503 includes drive DRV 1 , drive DRV 2 , drive DRV 3 and drive DRV 4 . Drive DRV 1 controls the turn-off thyristor S 1 , drive DRV 2 controls the turn-off thyristor S 2 , drive DRV 3 controls the turn-off thyristor S 5 , drive DRV4 Control the turn-off thyristor and S 6 , energy storage unit 10, current limiting unit 20, auxiliary energy extraction unit 30, voltage stabilizing unit 40, conversion and drive unit 50, first conversion unit 501, second conversion unit 502, first inductor L i , third capacitor C DC , second capacitor C CL , second resistor R s , port T 1 and port T 2 The connection methods of are referred to the above embodiments and will not be elaborated in this embodiment. As Figure 4 shown, the power semiconductor device module 60 has three states: forward state, blocking state, and reverse state.

[0045] In some alternative embodiments, as Figure 2 shown, the system further includes a switching unit 70. The switching unit 70 is electrically connected between the auxiliary energy extraction unit 30 and the conversion and drive unit 50, and between the energy storage unit 10 and the conversion and drive unit 50. The switching unit 70 is configured to connect the energy storage unit 10 to the first conversion unit 501 and disconnect the connection between the conversion and drive unit 50 and the auxiliary energy extraction unit 30, and the conversion and drive unit 50 obtains a first voltage. The switching unit 70 is configured to connect the auxiliary energy extraction unit 30 to the first conversion unit 501 and disconnect the connection between the conversion and drive unit 50 and the energy storage unit 10, and the conversion and drive unit 50 obtains a second voltage. The above intelligent switching mechanism can automatically adjust the energy source according to the system operating state. The above switching unit can be set according to the existing technology, and no specific limitation is made in the embodiments of the present application.

[0046] Exemplarily, as Figure 2 and Figure 3 shown, a drive energy extraction system for a power semiconductor device applying a half-bridge module is shown. The power semiconductor device module 60 includes turn-off thyristors S 1 , turn-off thyristors S 2 , diodes D 1 , diodes D 2 , port T 1 and port T 2 , the turn-off thyristors S 1 , S 2 and their anti-parallel diodes D 1 , D 2 form a bridge arm, that is, the turn-off thyristor S 1 is in parallel with the diode D 1 , the turn-off thyristor S 2 is in parallel with the diode D 2 , the turn-off thyristor S 1 is in parallel with the diode D1 The part in parallel is connected to the turn-off thyristor S 2 and the diode D 2 in series. The turn-off thyristor S 1 and the diode D 1 One end of the part in parallel is electrically connected to one end of the first inductor L i and the first port T 3 respectively. The turn-off thyristor S 2 and the diode D 2 One end of the part in parallel is electrically connected to one end of the second capacitor C CL and the third capacitor C DC respectively and is grounded.

[0047] In the above example, as Figure 2 shown, the first conversion unit 501 and the second conversion unit 502 are both DC / DC converters. The drive unit 503 includes the drive DRV 1 and the drive DRV 2 . The first conversion unit 501 and the second conversion unit 502 independently control the drive DRV 1 and the drive DRV 2 , and the DRV 1 controls the turn-off thyristor S 1 , and the DRV 2 controls the turn-off thyristor S 2 .

[0048] In the above example, the first inductor L i is used to limit the rate of current rise when the turn-off thyristor S 1 , S 2 is turned on. The clamping circuit is used to limit the voltage spike caused by the freewheeling of the first inductor L 1 , S 2 when the turn-off thyristor S i is turned off. When the turn-off thyristor S 1 conducts and the turn-off thyristor S 2 blocks, the third capacitor C DC discharges to the outside through the first inductor L i . The first conversion unit 501 is controlled by the switching unit 70 to supply power to the drive. At the same time, there is current passing through the first inductor L i and electromagnetic energy is stored. When switched to the state where the turn-off thyristor S 2 conducts and the turn-off thyristor S 1 blocks, the electromagnetic energy stored in the first inductor L i flows unidirectionally through the first diode D 3 and is stored in the first capacitor C 1 . The voltage of the first capacitor C 1 rises. When the first capacitor C1 When the voltage reaches the operating threshold of the first voltage regulator diode D 4 , a small current in the first voltage regulator diode D 4 generates a voltage across the first resistor R 1 and triggers the conduction of the first thyristor S 3 . The voltage of the first capacitor C 1 is maintained stable. The switching unit 70 controls the second conversion unit 502 to supply power to the drive unit 503, and the remaining current flows into and is stored in the second capacitor C CL . When the potential of the second capacitor C CL rises above that of the third capacitor C DC , the excess energy is dissipated as heat through the second resistor R s , and the above process is repeated.

[0049] In the above example, the second capacitor C CL is connected to the first conversion unit 501. When the potential of the second capacitor C CL rises to the second threshold, the second capacitor C CL supplies power to the drive through the first conversion unit 501.

[0050] The above switching unit may include: an energy extraction switching module, configured to connect the energy storage unit to the first conversion unit and disconnect the conversion and drive unit from the auxiliary energy extraction unit, so that the conversion and drive unit obtains the first voltage. In the case where the conversion and drive unit obtains the second voltage, connect the auxiliary energy extraction unit to the second conversion unit and disconnect the conversion and drive unit from the energy storage unit, so that the conversion and drive unit obtains the second voltage.

[0051] Exemplarily, the above switching unit further includes:

[0052] a first sensing module, connected to the energy storage unit, for obtaining first voltage information, where the first voltage information includes the actual voltage value of the energy storage unit;

[0053] a second sensing module, connected to the auxiliary energy extraction unit, for obtaining second voltage information, where the second voltage information includes the actual voltage value of the auxiliary energy extraction unit;

[0054] A sending module, configured to send the first voltage information and the second voltage information to an energy-taking switching module, and control the energy-taking switching module to connect the auxiliary energy-taking unit to the second conversion unit and disconnect the conversion and driving unit from the energy storage unit when the target condition is met, and control the energy-taking switching module to connect the energy storage unit to the first conversion unit and disconnect the conversion and driving unit from the auxiliary energy-taking unit when the target condition is not met, where the target condition includes one of the following: the actual voltage value of the auxiliary energy-taking unit is greater than or equal to the second voltage, the actual voltage value of the energy storage unit is greater than or equal to the first preset voltage, and the actual voltage value of the energy storage unit is less than or equal to the second preset voltage.

[0055] Specifically, the third capacitor in the energy storage unit is connected to the sensor in the first sensing module for real-time monitoring of the voltage state of the third capacitor; the auxiliary energy-taking unit is connected to the sensor in the second sensing module to monitor its energy storage state, including the voltage magnitude of the auxiliary energy-taking unit; receive real-time data from the sensing module to monitor the energy storage of the auxiliary energy-taking unit, switch the energy storage unit to the function of the conversion and driving unit when the auxiliary energy-taking unit does not reach the second voltage, and switch the auxiliary energy-taking unit to the function of the conversion and driving unit when the auxiliary energy-taking unit reaches the second voltage; when the first conversion unit fails, the voltage of the third capacitor rises to the first preset voltage, and switch the auxiliary energy-taking unit to supply energy to the second conversion unit, when the energy storage unit fails, when the voltage of the third capacitor drops to the second preset voltage, switch the auxiliary energy-taking unit to supply energy to the second conversion unit. By analyzing the voltages of the third capacitor and the auxiliary energy-taking unit, the switching unit can determine when to switch the energy supply to avoid overcharging or energy waste.

[0056] By implementing the above dynamic energy-taking strategy, the auxiliary energy-taking unit can not only intercept and utilize energy more effectively, but also respond to system changes in real time, ensuring that the driving energy-taking method of high-voltage large-capacity power semiconductor devices can achieve the best performance under various operating conditions. By controlling the auxiliary energy-taking unit through the switching unit in this embodiment, not only the power demand of the conversion and driving unit is reduced, the circuit design is simplified, and the manufacturing cost is reduced, but also the stable operation of the system in the face of faults is ensured through information interaction and dynamic switching, improving the overall reliability.

[0057] According to an embodiment of the present application, there is also provided a driving energy-taking method for a power semiconductor device, which is applied to the driving energy-taking system of the above power semiconductor device. The method embodiment provided in the embodiment of the present application can be executed in a mobile terminal, a computer terminal or a similar computing device.

[0058] It should be noted that the steps shown in the flowchart of the accompanying drawings can be executed in a computer system such as a set of computer-executable instructions. And although a logical order is shown in the flowchart, in some cases, the steps shown or described can be executed in a different order than here.

[0059] Figure 5 It is a flowchart of a driving energy extraction method for a power semiconductor device according to an embodiment of the present application. As Figure 5 shown, the driving energy extraction method includes the following steps:

[0060] S01. Control the energy storage unit in the driving energy extraction system to provide a first voltage to supply energy to the conversion and driving unit in the driving energy extraction system, and enable the current limiting module in the driving energy extraction system to store a first energy, where the first energy is part of the energy released by the energy storage unit, and the auxiliary energy extraction unit in the driving energy extraction system extracts energy from the current limiting module;

[0061] Energy is released from the energy storage unit. After being regulated by the current limiting unit, part of it is intercepted and stored by the auxiliary energy extraction unit to provide backup energy for subsequent driving. The energy storage unit in the driving energy extraction system provides a first voltage to the conversion and driving unit to drive the power semiconductor device. When the energy storage unit releases energy, the current limiting unit starts to work and stores the first energy, which is part of the energy released by the energy storage unit. The auxiliary energy extraction unit extracts energy from the current limiting unit and converts the first energy into a second voltage available for the driving unit. This method enables the conversion and driving unit not to need to bear all the power requirements alone because it can obtain additional energy supply from the auxiliary energy extraction unit. Therefore, the power requirement of the conversion and driving unit is reduced, the design implementation difficulty is reduced accordingly, and the manufacturing cost is also reduced.

[0062] S02. Control the auxiliary energy extraction unit to provide a second voltage to supply energy to the conversion and driving unit, where the second energy in the auxiliary energy extraction unit is released into the voltage stabilizing unit in the driving energy extraction system, and the second energy is the remaining part of the first energy except for the part stored in the auxiliary energy extraction unit;

[0063] During the switching process of the power semiconductor device, the current limiting module stores part of the energy (the first energy). The auxiliary energy extraction unit extracts energy from the current limiting module and converts part of the energy (the second energy) into a second voltage for driving the conversion and driving unit. Since the auxiliary energy extraction unit can provide additional energy, it reduces the need for the conversion and driving unit to directly obtain energy from the energy storage unit, thereby reducing the designed power requirement of the conversion and driving unit. When the conversion and driving unit fails and cannot convert the first voltage normally, the auxiliary energy extraction unit can serve as an independent power supply to continue driving the power semiconductor device by providing the second voltage.

[0064] The driving energy extraction system and method for the power semiconductor device provided by this application can effectively extract and utilize energy from the current limiting unit by introducing an auxiliary energy extraction unit, reducing energy waste, lowering the power demand of the conversion and driving unit, simplifying thermal management, and improving system efficiency. At the same time, by setting up an energy storage unit and an auxiliary energy extraction unit, the system can flexibly switch the energy supply under different working conditions, improving the stability and reliability of the driving system. In practical applications, this design can significantly improve the driving efficiency and reliability of the power semiconductor device, effectively reduce device damage caused by voltage fluctuations and overcurrent, extend the service life of the device, and reduce maintenance costs. In addition, the setting of the current limiting unit and the voltage stabilizing unit further enhances the safety and voltage stability of the system, effectively avoiding damage to the power semiconductor device caused by overcurrent and voltage fluctuations, and improving the performance of the overall system.

[0065] In some alternative embodiments, the conversion and driving unit includes a driving unit, a first conversion unit, and a second conversion unit. Among them, the driving unit is electrically connected to the power semiconductor device module, the first conversion unit is electrically connected to the energy storage unit and the driving unit respectively, and the second conversion unit is electrically connected to the auxiliary energy extraction unit and the driving unit respectively. As Figure 6 shown, the driving energy extraction method includes:

[0066] S101. Control the energy storage unit to supply energy to the first conversion unit, so that the first conversion unit converts the first voltage into a third voltage, and then drives the power semiconductor device in the power semiconductor device module through the driving unit;

[0067] The first conversion unit and the energy storage unit are the main power supply units of the system. The first conversion unit converts the first voltage into a third voltage to drive the power semiconductor device and ensure the normal operation of the device.

[0068] S102. When it is detected that the first conversion unit fails or the output voltage is lower than the preset value, control the auxiliary energy extraction unit to supply energy to the second conversion unit, so that the second conversion unit converts the second voltage into a fourth voltage, and then drives the power semiconductor device through the driving unit;

[0069] When the system detects that the energy of the energy storage unit is insufficient or the first conversion unit fails, the auxiliary energy extraction unit will take on the power supply responsibility, convert the second voltage into a fourth voltage through the second conversion unit, and drive the power semiconductor device to ensure the normal driving of the power semiconductor device.

[0070] Through the combination of the first conversion unit and the second conversion unit, not only is a stable and efficient energy supply ensured for the drive unit under normal operating conditions, but also a backup energy path is provided in case of faults. At the same time, energy utilization is optimized and thermal management is simplified, thereby achieving a reduction in system design costs, an improvement in reliability, and an enhancement in efficiency. In practical applications, the driving efficiency and reliability of power semiconductor devices are significantly improved, voltage fluctuations and overcurrent damage to the devices are effectively reduced, the service life of the devices is extended, and maintenance costs are reduced.

[0071] Specifically, the system may further include a switching unit, which is electrically connected between the auxiliary energy extraction unit and the conversion and drive unit, and between the energy storage unit and the conversion and drive unit. At this time, when the conversion and drive unit obtains the first voltage, a first control signal can be sent to the switching unit to control the switching unit to connect the energy storage unit to the first conversion unit and disconnect the connection between the conversion and drive unit and the auxiliary energy extraction unit; when the conversion and drive unit obtains the second voltage, a second control signal can be sent to the switching unit to control the switching unit to connect the auxiliary energy extraction unit to the first conversion unit and disconnect the connection between the conversion and drive unit and the energy storage unit.

[0072] In summary, the driving energy extraction system and method for power semiconductor devices provided by this application can not only reduce the power demand of the conversion and drive unit, reduce the implementation difficulty and manufacturing cost, significantly improve the driving efficiency and reliability of power semiconductor devices, but also effectively reduce device damage caused by voltage fluctuations and overcurrent, extend the service life of the devices, reduce maintenance costs, simplify thermal management, and improve system efficiency.

[0073] From the above description, it can be seen that the above embodiments of this application achieve the following technical effects:

[0074] 1. This application reduces the power demand of the conversion and drive unit through the auxiliary energy extraction unit, reducing the implementation difficulty and manufacturing cost; the second voltage provided by the auxiliary energy extraction unit as a supplement not only effectively utilizes the energy stored in the current limiting unit, but also reduces the dependence on the main power supply and the energy consumption of the system at peak power demand. This application reduces the power requirement of the main conversion and drive unit, making the design and manufacture of the conversion and drive unit simpler, the cost reduced, effectively reducing device damage caused by voltage fluctuations and overcurrent, extending the service life of the devices, and reducing maintenance costs. The setting of the current limiting unit and the voltage stabilizing unit further enhances the safety and voltage stability of the system, effectively avoiding damage to power semiconductor devices caused by overcurrent and voltage fluctuations;

[0075] 2. After a fault occurs in the conversion and drive unit, by setting up a second conversion unit and connecting an auxiliary energy extraction unit to independently control the drive unit, the auxiliary energy extraction unit provides the necessary second voltage to drive the power semiconductor device, enabling the system to still maintain operation or perform fault handling, greatly enhancing the system reliability;

[0076] 3. The auxiliary energy extraction unit in this application can effectively recycle and utilize the electromagnetic energy stored in the current limiting unit, convert it into the second voltage, and use it to drive the power semiconductor device. This process avoids the waste caused by the conversion of energy into heat, reduces the heat release, significantly improves the energy utilization efficiency of the system, and simplifies the thermal management of the system;

[0077] 4. The conversion unit in this application can automatically detect and switch the energy supply unit. When the voltage stored in the auxiliary energy extraction unit is sufficient to supply energy to the conversion and drive unit, it switches the auxiliary energy extraction unit to supply energy to the conversion and drive unit, reducing the power requirement of the main conversion and drive unit, reducing energy waste, and when a fault occurs in the first conversion unit, the device can still operate spontaneously without manual intervention for a short time, enhancing the reliability of the device.

[0078] The above are only the preferred embodiments of this application and are not used to limit this application. For those skilled in the art, this application can have various changes and modifications. Any modifications, equivalent replacements, improvements, etc. made within the principle of this application shall be included in the protection scope of this application.

Claims

1. A driving energy-taking system for a power semiconductor device, characterized in that: Electrically connected to the power semiconductor device module, the drive energy acquisition system includes: An energy storage unit, configured to provide a first voltage; a current limiting unit, electrically connected to the energy storage unit, for limiting the current of the power semiconductor device module and storing energy released from the energy storage unit; A voltage stabilizing unit, electrically connected to the energy storage unit, and used for stabilizing the voltage of the energy storage unit; an auxiliary energy taking unit, electrically connected to the current limiting unit and the voltage stabilizing unit, respectively, and configured to take energy from the current limiting unit and provide a second voltage; A conversion and driving unit is electrically connected to the energy storage unit and the auxiliary energy acquisition unit, respectively, and is used to convert the first voltage to drive the power semiconductor device in the power semiconductor device module when the first voltage is obtained, and to convert the second voltage to drive the power semiconductor device when the second voltage is obtained.

2. The drive energy taking system according to claim 1, characterized in that: The conversion and driving unit comprises: a driving unit, electrically connected to the power semiconductor device module, and configured to drive the power semiconductor device module; a first conversion unit, electrically connected to the energy storage unit and the driving unit, respectively, and configured to convert the first voltage into a third voltage so that the driving unit drives the power semiconductor device module; The second conversion unit is electrically connected to the auxiliary energy acquisition unit and the driving unit respectively, and is used to convert the second voltage into a fourth voltage so that the driving unit drives the power semiconductor device module.

3. The drive energy taking system according to claim 1 or 2, characterized in that: The auxiliary energy acquisition unit comprises: A first energy storage module, used to store energy for the auxiliary energy acquisition unit; A switch module, electrically connected to the first energy storage module, and used to connect or disconnect the auxiliary energy taking unit and the voltage stabilizing unit; The voltage stabilization control module is electrically connected to the first energy storage module and the switch module respectively, and is used to provide a first threshold voltage. When the second voltage is greater than or equal to the first threshold voltage, the first energy storage module stops charging and the switch module connects the first energy storage module and the voltage stabilization unit.

4. The drive energy extraction system according to claim 3, characterized in that: The voltage stabilizing control module includes a first voltage stabilizing diode and a first resistor, the switch module includes a first thyristor, and the first energy storage module includes a first capacitor and a first diode; The auxiliary energy acquisition unit further includes a first port, a second port, a third port and a fourth port; The first port is electrically connected to the current limiting unit, the first voltage stabilizing diode, the first diode and the first thyristor respectively; the second port is electrically connected to the voltage stabilizing unit, the first resistor, the first thyristor and the first capacitor respectively; the third port is electrically connected to the conversion and driving unit, the first diode and the first capacitor respectively; the fourth port is electrically connected to the conversion and driving unit, the first capacitor, the first thyristor and the first resistor respectively; The first voltage regulator diode is also electrically connected to the first resistor, the first thyristor and the first diode respectively; the first capacitor is also electrically connected to the first diode; the first thyristor is also electrically connected to the first resistor, the first voltage regulator diode and the first diode respectively.

5. The drive energy taking system according to claim 1 or 2, characterized in that: The voltage stabilizing unit includes a second capacitor and a second resistor, the second capacitor is electrically connected to the power semiconductor device module, the energy storage unit, the second resistor and the auxiliary energy extraction unit respectively, and the second resistor is also electrically connected to the current limiting unit and the energy storage unit respectively.

6. The drive energy extraction system according to claim 5, characterized in that: The energy storage unit includes a third capacitor, one end of the third capacitor is electrically connected to the conversion and driving unit, the current limiting unit and the second resistor respectively, and the other end of the third capacitor is electrically connected to the second capacitor and the power semiconductor device module respectively.

7. The drive energy taking system according to claim 1 or 2, characterized in that: The current limiting unit includes a first inductor, one end of which is electrically connected to the conversion and driving unit, the energy storage unit and the voltage stabilizing unit respectively, and the other end of which is electrically connected to the auxiliary energy extraction unit and the power semiconductor device module respectively.

8. The drive energy extraction system according to claim 2, characterized in that: The system further comprises a switching unit, the switching unit being electrically connected between the auxiliary energy taking unit and the conversion and driving unit and between the energy storage unit and the conversion and driving unit, and being used for: Connecting the energy storage unit to the first conversion unit, and disconnecting the conversion and drive unit from the auxiliary energy acquisition unit, so that the conversion and drive unit acquires the first voltage; The auxiliary energy acquisition unit is connected to the second conversion unit, and the connection between the conversion and driving unit and the energy storage unit is disconnected, so that the conversion and driving unit obtains the second voltage.

9. A method for driving and obtaining energy for a power semiconductor device, characterized in that: A drive energy acquisition system for a power semiconductor device according to any one of claims 1 to 8, wherein the drive energy acquisition system is electrically connected to a power semiconductor device module, and the drive energy acquisition method comprises: Controlling the energy storage unit in the drive energy acquisition system to provide a first voltage to supply energy to the conversion and drive unit in the drive energy acquisition system, and causing the current limiting module in the drive energy acquisition system to store a first energy, wherein the first energy is part of the energy released by the energy storage unit, and the auxiliary energy acquisition unit in the drive energy acquisition system obtains energy from the current limiting module; The auxiliary energy acquisition unit is controlled to provide a second voltage to supply energy to the conversion and driving unit, wherein the second energy in the auxiliary energy acquisition unit is released to the voltage stabilizing unit in the driving energy acquisition system, and the second energy is the remaining part of the first energy except the energy stored in the auxiliary energy acquisition unit.

10. The driving energy acquisition method according to claim 9, characterized in that: The conversion and driving unit includes: a driving unit electrically connected to the power semiconductor device module; a first conversion unit electrically connected to the energy storage unit and the driving unit respectively; a second conversion unit electrically connected to the auxiliary energy extraction unit and the driving unit respectively; The controlling the energy storage unit in the driving energy taking system to provide a first voltage to supply energy to the conversion and driving unit in the driving energy taking system comprises: controlling the energy storage unit to supply energy to the first conversion unit so that the first conversion unit converts the first voltage into a third voltage, thereby driving the power semiconductor device in the power semiconductor device module through the driving unit; The controlling the auxiliary energy acquisition unit to provide a second voltage to supply energy to the conversion and driving unit includes: when it is detected that the first conversion unit fails or the output voltage is lower than a preset value, controlling the auxiliary energy acquisition unit to supply energy to the second conversion unit so that the second conversion unit converts the second voltage into a fourth voltage, thereby driving the power semiconductor device through the driving unit.

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