Film forming apparatus and film forming method

Abstract

A film forming apparatus is provided with: a substrate support member that supports a substrate; an alignment member that performs alignment of the substrate and a mask; and a vapor deposition member that discharges a vapor deposition substance to the substrate via the mask, in which the film forming apparatus is provided with an electrostatic chuck that adsorbs the mask from the side opposite to the substrate during alignment by the alignment member, and a vapor deposition member that discharges the vapor deposition substance to the substrate via the mask, the film forming apparatus being provided with an electrostatic chuck that adsorbs the mask from the side opposite to the substrate during alignment by the alignment member.

Description

Technical Field

[0001] The present invention relates to a film forming device and a film forming method. Background Art

[0002] There is known a technique in which a substrate and a mask are aligned and then a deposition material is deposited on the substrate through the mask to form a film (for example, Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: International Publication No. 2017 / 222009 Pamphlet Summary of the invention

[0006] Problems to be solved by the invention

[0007] When forming a precise vapor deposition pattern on a substrate, high alignment accuracy between the substrate and the mask is required. In order to accurately measure the positional offset between the substrate and the mask during alignment, it is effective to bring the substrate and the mask as close as possible. However, if the substrate and the mask are brought close, there is a possibility that the substrate and the mask will come into contact and damage the substrate.

[0008] The present invention provides a technology capable of preventing a substrate and a mask from contacting each other and bringing them closer during alignment.

[0009] Means for solving problems

[0010] According to the present invention, there is provided a film forming device, the film forming device comprising:

[0011] a substrate supporting member, the substrate supporting member supporting a substrate;

[0012] an alignment member for aligning the substrate and the mask; and

[0013] a vapor deposition member that releases a vapor deposition substance toward the substrate via the mask,

[0014] The film forming device is characterized in that

[0015] The film forming apparatus includes an electrostatic chuck configured to attract the mask from a side opposite to the substrate during alignment by the alignment member.

[0016] Effects of the Invention

[0017] According to the present invention, it is possible to provide a technique capable of preventing a substrate and a mask from coming into contact with each other and bringing them closer during alignment. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1A schematic diagram of a portion of a production line for electronic devices.

[0019] Figure 2 This is a schematic diagram of a film forming apparatus according to one embodiment of the present invention.

[0020] Figure 3 This is a three-dimensional diagram of a substrate, a mask, and an electrostatic chuck.

[0021] Figure 4A yes Figure 3 AA line section view.

[0022] Figure 4B yes Figure 3 BB line cross-sectional view.

[0023] Figure 5 yes Figure 2 A diagram illustrating the operation of the film forming device.

[0024] Figure 6 yes Figure 2 A diagram illustrating the operation of the film forming device.

[0025] Figure 7 yes Figure 2 A diagram illustrating the operation of the film forming device.

[0026] Figure 8 yes Figure 2 A diagram illustrating the operation of the film forming device.

[0027] Fig. 9 yes Figure 2 A diagram illustrating the operation of the film forming device.

[0028] Fig.10 yes Figure 2 A diagram illustrating the operation of the film forming device.

[0029] Fig.11 yes Figure 2 A diagram illustrating the operation of the film forming device.

[0030] Fig.12 yes Figure 2 A diagram illustrating the operation of the film forming device.

[0031] Fig.13A It is another stereoscopic image of an electrostatic chuck.

[0032] Fig. 13B yes Fig.13A CC line section view.

[0033] Fig.14 It is an operation explanation diagram of a film forming apparatus according to another embodiment.

[0034] Fig.15It is an operation explanation diagram of a film forming apparatus according to another embodiment.

[0035] Fig.16 This is a schematic diagram of a conveying robot according to another embodiment. DETAILED DESCRIPTION

[0036] Hereinafter, the embodiments are described in detail with reference to the accompanying drawings. In addition, the following embodiments do not limit the invention involved in the scope of protection of the claims. In the embodiments, multiple features are described, but all of these multiple features are not limited to the features necessary for the invention. In addition, multiple features can also be combined arbitrarily. In addition, in the accompanying drawings, the same or similar structures are marked with the same figure numbers, and repeated descriptions are omitted.

[0037] <First Embodiment>

[0038] <Production line for electronic devices>

[0039] Figure 1 Schematic diagram showing a part of the structure of a production line 100 of electronic devices to which the film forming apparatus of the present invention can be applied. In each figure, arrows X and Y indicate mutually orthogonal horizontal directions, and arrow Z indicates the up-down direction (gravity direction). Figure 1 The production line 100 is used, for example, to manufacture light-emitting elements of an organic EL display device. The production line 100 includes a conveying chamber 120 having an octagonal shape when viewed from above. A substrate 101 is conveyed into the conveying chamber 120 from a conveying path 110, and the substrate 101 after film formation is conveyed from the conveying chamber 120 to a conveying path 111.

[0040] A plurality of film forming devices 1 for performing film forming processing on the substrate 101 are arranged around the transport chamber 120. The transport chamber 130 is arranged adjacent to each film forming device 1. A storage chamber 140 for storing the mask 102 and a storage chamber 141 for storing the electrostatic chuck 103 are arranged around the transport chamber 130 which has an octagonal shape in a plan view.

[0041] The conveying chamber 120 is provided with a conveying unit 121 for conveying the substrate 101. The conveying unit 121 of the present embodiment is a horizontal multi-jointed robot, which carries the substrate 101 in a horizontal position on its hand for conveying. The conveying unit 121 performs a conveying operation of conveying the substrate 101 conveyed from the conveying path 110 to the film forming device 1, and a conveying operation of conveying the substrate 101 after film formation in the film forming device 1 from the film forming chamber 1 to the conveying path 111.

[0042] A conveying unit 131 for conveying the mask 102 and the electrostatic chuck 103 is disposed in each conveying chamber 130. The conveying unit 131 of the present embodiment is a horizontal multi-jointed robot, and carries the mask 102 or the electrostatic chuck 103 in a horizontal posture on its hand for conveying. The conveying unit 131 performs an action of conveying the mask 102 from the storage chamber 140 to the film forming device 1, an action of conveying the mask 102 from the film forming device 1 to the storage chamber 140, an action of conveying the electrostatic chuck 103 from the storage chamber 141 to the film forming device 1, and an action of conveying the electrostatic chuck 103 from the film forming device 1 to the storage chamber 141.

[0043] <Film forming device>

[0044] Figure 2 1 is a schematic diagram of a film forming apparatus 1 according to an embodiment of the present invention. The film forming apparatus 1 is an apparatus for forming a film of a vapor-deposited substance on a substrate 101, and a thin film of the vapor-deposited substance in a predetermined pattern is formed using a mask 102. The material of the substrate 101 on which the film is formed in the film forming apparatus 1 can be appropriately selected from materials such as glass, resin, and metal. In particular, in this embodiment, the substrate 101 is, for example, a glass substrate on which a TFT (Thin Film Transistor) is formed or a silicon wafer on which a semiconductor element is formed.

[0045] The vapor deposition material includes organic materials, inorganic materials (metals, metal oxides, etc.), etc. The film forming device 1 can be applied to manufacturing devices for manufacturing electronic devices such as display devices (flat panel displays, etc.), thin film solar cells, organic photoelectric conversion elements (organic thin film imaging elements), optical components, etc., and can be applied to manufacturing devices for manufacturing organic EL panels in particular. In the following description, an example in which the film forming device 1 forms a film on the substrate 101 by vacuum vapor deposition is described, but the present invention is not limited to this, and various film forming methods such as sputtering and CVD can be applied.

[0046] The film forming device 1 has a box-shaped vacuum chamber 2. The internal space of the vacuum chamber 2 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen. In the present embodiment, the vacuum chamber 2 is connected to a vacuum pump not shown in the figure. A vapor deposition unit 10 is arranged in the internal space of the vacuum chamber 2. The vapor deposition unit 10 has a vapor deposition source that releases a vapor deposition material upward. Above the vapor deposition unit 10, a baffle 10a is arranged to limit and release the release of the vapor deposition material. The baffle 10a is opened and closed by an opening and closing mechanism not shown in the figure. Figure 2 The shutter 10a is shown in a closed state, and the release of the vapor deposition material by the vapor deposition unit 10 is restricted. An anti-adhesion plate 2a is also arranged above the vapor deposition unit 10. The anti-adhesion plate 2a prevents the vapor deposition material from being unnecessarily attached to the following structure arranged in the upper part of the internal space of the vacuum chamber 2.

[0047] A substrate support plate 3 is provided in the internal space of the vacuum chamber 2 to support the substrate 101 in a horizontal posture. In the present embodiment, the substrate support plate 3 is an electrostatic chuck, and the substrate 101 is adsorbed and held by electrostatic force on its lower surface. A cooling plate 4 is fixed to the substrate support plate 3. The cooling plate 4 has, for example, a water cooling mechanism, and cools the substrate 101 via the substrate support plate 3 during film formation.

[0048] The substrate support plate 3 and the cooling plate 4 are suspended on the magnet plate 5 via the support portion 5a so as to be displaceable in the Z direction. The magnet plate 11 is a plate that attracts the mask 102 by magnetic force. During film formation, the substrate 101 is magnetically sandwiched between the magnet plate 11 and the mask 102, thereby improving the close contact between the substrate 101 and the mask 102.

[0049] The film forming device 1 includes a mask support unit 6 that supports the mask 102 during film forming. In the case of the present embodiment, the mask support unit 6 also performs a transfer operation of the substrate 101 between the conveying unit 121 and the substrate support plate 3. The mask support unit 6 includes a pair of support members 6a separated in the X direction. Each support member 6a is raised and lowered by a corresponding actuator 6b. In the present embodiment, an actuator 6b is provided for each support member 6a, but a pair of support members 6a may also be raised and lowered by one actuator 6b. The actuator 6b is, for example, an electric cylinder or an electric ball screw mechanism. The support member 6a includes a claw portion F1 at its lower end portion. The peripheral edge portions of the substrate 101 and the mask 102 are placed on the claw portion F1. Figure 2 In the example of FIG. 1 , the mask 102 is placed on the claw portion F1 . The pair of support members 6 a are raised and lowered synchronously, so that the substrate 101 and the mask 102 are raised and lowered.

[0050] The film forming device 1 includes a suction cup support unit 7 that supports the electrostatic suction cup 103 during alignment. The suction cup support unit 7 includes a pair of support members 7a separated in the X direction. Each support member 7a is raised and lowered by a corresponding actuator 7b. In the present embodiment, an actuator 7b is provided for each support member 7a, but a pair of support members 7a may be raised and lowered by one actuator 7b. The actuator 7b includes, for example, an electric cylinder or an electric ball screw mechanism. The support member 7a includes a claw portion F2 at its lower end portion. The peripheral edge portion of the electrostatic suction cup 103 is placed on the claw portion F2. Figure 2 In the example of FIG. 1 , the mask 102 is placed on the claw portion F2. The pair of support members 7a are raised and lowered synchronously to raise and lower the electrostatic chuck 103.

[0051] The film forming apparatus 1 includes an alignment unit 8 for aligning the substrate 101 and the mask 102. The alignment unit 8 includes a drive mechanism 80 and a plurality of measurement units SR. The drive mechanism 80 includes a distance adjustment unit 81, a support shaft 82, a stage 83, and a position adjustment unit 84.

[0052] The distance adjustment unit 81 is a mechanism for raising and lowering the support shaft 82 in the Z direction, and is provided with an electric cylinder or an electric ball screw mechanism, for example. A magnet plate 5 is fixed to the lower end of the support shaft 82, and the substrate support plate 3 is raised and lowered via the magnet plate 5 by raising and lowering the support shaft 82. By raising and lowering the substrate support plate 3, the distance between the substrate 101 and the mask 102 is adjusted, so that the substrate 101 and the mask 102 supported on the substrate support plate 3 are brought close to and away from (separated from) in the thickness direction (Z direction) of the substrate 101. In other words, the distance adjustment unit 81 brings the substrate 101 and the mask 102 close to each other in the direction of superposition, or away from each other in the opposite direction. It should be noted that the "distance" adjusted by the distance adjustment unit 81 is the so-called vertical distance (or plumb distance), and the distance adjustment unit 81 can also be said to be a unit for adjusting the vertical position of the substrate 101. The distance adjustment unit 81 is mounted on the position adjustment unit 84 via the stage 83.

[0053] The position adjustment unit 84 adjusts the relative position of the substrate 101 with respect to the mask 102 by displacing the substrate support plate 3 on the XY plane. That is, the position adjustment unit 80 can also be said to be a unit for adjusting the horizontal positions of the mask 102 and the substrate 101. The position adjustment unit 80 can displace the substrate support plate 6 in the X direction, the Y direction, and the rotation direction (θ direction) around the axis in the Z direction. In the present embodiment, the position of the mask 102 is fixed, and the substrate 101 is displaced to adjust their relative positions, but the mask 102 may be displaced to make the adjustment, or both the substrate 101 and the mask 102 may be displaced.

[0054] The position adjustment unit 84 includes a fixed plate 20a and a movable plate 20b. The fixed plate 84a and the movable plate 84b are rectangular frame-shaped plates, and the fixed plate 84a is fixed to the upper wall portion 20 of the vacuum chamber 2. Between the fixed plate 20a and the movable plate 20b, an actuator is provided to displace the movable plate 20b relative to the fixed plate 20a in the X direction, the Y direction, and the rotation direction around the axis in the Z direction.

[0055] A frame-shaped stand 83 is mounted on the movable plate 84b, and a distance adjustment unit 81 is supported on the stand 83. When the movable plate 84b is displaced, the stand 83 and the distance adjustment unit 81 are displaced integrally. Thus, the substrate 101 can be displaced in the X direction, the Y direction, and the rotation direction around the axis in the Z direction. An opening is formed on the upper wall portion 20 for the support shaft 82, the support members 6a and 7a to pass through. These openings are sealed by a sealing member (bellows, etc.) not shown in the figure to maintain the airtightness in the vacuum chamber 2.

[0056] The measuring unit SR measures the positional deviation between the substrate 101 and the mask 102. The measuring unit SR of the present embodiment is a photographing device (camera) for photographing an image. The measuring unit SR is disposed on the upper wall portion 20 and is capable of photographing an image in the vacuum chamber 2. Alignment marks (not shown) are formed on the substrate 101 and the mask 102, respectively. The measuring unit SR photographs the alignment marks of the substrate 101 and the mask 102. Based on the position of each alignment mark, the positional deviation between the substrate 101 and the mask 102 is calculated, and the relative position of the substrate 101 and the mask 102 is adjusted by the position adjustment unit 84 to eliminate the positional deviation.

[0057] The control device 9 controls the entire film forming device 1. The control device 9 includes a processing unit 90, a storage unit 91, an input / output interface (I / O) 92, and a communication unit 93. The processing unit 90 is a processor represented by a CPU, and executes a program stored in the storage unit 92 to control the film forming device 1. The storage unit 91 is a storage device such as a ROM, RAM, HDD, etc., and stores various control information in addition to the program executed by the processing unit 90. The I / O 92 is an interface for sending and receiving signals between the processing unit 90 and an external device. The communication unit 93 is a communication device that communicates with a host device or other control devices via a communication line.

[0058] <Structural Example of Substrate, Mask, and Electrostatic Chuck>

[0059] Figure 3 An example of a substrate 101, a mask 102, and an electrostatic chuck 103 is shown. The substrate 101 is a circular silicon wafer, and after film formation, a plurality of chips 101a are cut out from the substrate 101. The mask 102 is a circular member similar to the substrate 101, and includes a mask portion 102b corresponding to each chip 101a and a frame portion 102a around the mask portion 102b. The mask portion 102b is formed with a plurality of openings (through holes) 102c through which the deposition material to be deposited on the substrate 101 passes, and the film formation pattern on the substrate 101 is defined by the arrangement of the openings 102c. Figure 4A yes Figure 3 The AA line cross-sectional view of is a cross-sectional view of the mask 102. The frame portion 102a is a relatively thick thick-walled portion, and the mask portion 102b is a relatively thin thin-walled portion. The rigidity of the frame portion 102a is higher than the rigidity of the mask portion 102b.

[0060] Back to Figure 3The electrostatic suction cup 103 is a circular component similar to the mask 102, and a flat adsorption surface 103c is formed on its upper surface. The adsorption surface 103c has a frame-shaped adsorption portion 103a and a grid-shaped adsorption portion 103b provided inside the adsorption portion 103a. The adsorption portion 103a has a ring shape and adsorbs the peripheral portion of the frame portion 102a of the mask 102. The adsorption portion 103b has a cross shape and adsorbs the cross-shaped portion extending from the center of the frame portion 102a of the mask 102 to the left, right, front and back. Figure 4B yes Figure 3 The BB line cross-sectional view is a cross-sectional view of the electrostatic chuck 103. The portion surrounded by the adsorption surface 103c is recessed, and the adsorption surface 103c is configured to adsorb the frame portion 102a of the mask 102, and not to adsorb the mask portion 102b. In this way, the electrostatic chuck 103 is configured to partially adsorb the portion other than the opening portion 102c of the mask 102 without covering the opening portion 102c.

[0061] The electrostatic chuck 103 has a built-in battery and a control circuit (not shown). The battery is a power source for operating the electrostatic chuck 102. The control circuit can communicate with the control device 9 through wired or wireless communication. By turning the power of the electrostatic chuck 102 on and off by the control circuit, the adsorption and adsorption stop of the electrostatic chuck 102 can be controlled. Instead of communication, an on / off switch may be provided on the electrostatic chuck 103, and an operating mechanism for operating the on / off switch may be provided in the internal space of the vacuum chamber 2.

[0062] <Control Example>

[0063] An example of control of the film forming apparatus 1 executed by the processing unit 90 of the control unit 9 will be described. Figure 5~Figure 12 It is an operation explanation diagram of the film forming apparatus 1 , and shows an example from the carrying in of the substrate 101 to the film forming and the carrying out.

[0064] Figure 5 State ST51 represents a state where the substrate 101 is transported into the vacuum chamber 2. The substrate 101 is transported to the bottom of the substrate support plate 3 by the transport robot 121. The substrate adsorption surface 3a of the lower surface of the substrate support plate 3 is horizontal. Next, the substrate 101 is transferred from the transport robot 121 to the substrate support plate 3 by the mask support unit 6. Figure 5 The state ST52 shows the operation. By raising the supporting member 6a, the periphery of the substrate 101 is placed on the claw F1, and the substrate 101 is raised from the conveying robot 121 and pressed by the substrate adsorption surface 3a of the substrate supporting plate 3. The electrostatic chuck of the substrate supporting plate 3 is operated to adsorb and hold the substrate 101. By using the electrostatic chuck, the flatness of the substrate 101 can be maintained at a high level, and the substrate 101 can be held in a horizontal posture.

[0065] Next, the mask 102 is placed into the vacuum chamber 2 . Figure 6 State ST61 shows a state where the mask 102 is carried into the vacuum chamber 2. The mask 102 is carried into the vacuum chamber 2 from the storage chamber 140 by the transport robot 131. The mask 102 is located directly below the substrate 101. Next, the mask 102 is transferred from the transport robot 131 to the mask support unit 6. Figure 6 The state ST62 shows the operation. By raising the supporting member 6a, the peripheral edge of the mask 102 is placed on the claws F1, and the mask 102 is raised from the transport robot 131. The mask 102 is in a state supported by the supporting member 6a.

[0066] Next, the electrostatic chuck 103 is placed into the vacuum chamber 2 . Figure 7 State ST71 represents a state where the electrostatic chuck 103 is transported into the vacuum chamber 2. The electrostatic chuck 103 is transported from the storage chamber 141 into the vacuum chamber 2 by the transport robot 131. The electrostatic chuck 103 is located directly below the mask 102. Next, the electrostatic chuck 103 is transferred from the transport robot 131 to the chuck support unit 7. Figure 7 The state ST72 shows the operation. By raising the supporting member 7a, the periphery of the electrostatic chuck 103 is placed on the claw F2, and the electrostatic chuck 103 is raised from the transfer robot 131. The electrostatic chuck 103 is supported by the supporting member 7a. The adsorption surface 103c on the upper surface of the electrostatic chuck 103 is horizontal.

[0067] Next, the mask 102 is transferred to the electrostatic chuck 103 , and the mask 102 is adsorbed by the electrostatic chuck 103 . Figure 8 The state ST81 represents the operation. The mask 102 is lowered by lowering the support member 6a of the mask support unit 6, and the mask 102 is transferred to the electrostatic chuck 103. The electrostatic chuck 103 is operated to adsorb the mask 102 to the adsorption surface 103c. The mask 102 is adsorbed to the electrostatic chuck 103 from the side opposite to the substrate 101 (lower side). By using the electrostatic chuck 103, the flatness of the mask 102 can be maintained at a high level, and the mask 102 can be held in a horizontal posture.

[0068] Next, the substrate 101 and the mask 102 are positioned at an alignment position close to each other in the Z direction. In the present embodiment, the mask 102 is raised to approach the substrate 101, but the substrate 101 may be lowered. Figure 8The state ST82 shows the operation. The support member 7a is raised, and the mask 102 is raised together with the electrostatic chuck 103. At this time, in order to prevent the support member 6a from interfering with the support member 7a, the support member 6a is also raised at the same time. By holding the mask 102 with the electrostatic chuck 103, the flatness of the mask 102 is high, so the mask 102 can be brought very close to the substrate 101 without contacting the substrate 101.

[0069] Next, perform the alignment operation. Fig. 9 As shown in the state ST91 of FIG. 1 , the relative position of the alignment mark of the substrate 101 and the alignment mark of the mask 102 is measured by the measuring unit SR. If the measurement result (the positional deviation amount between the substrate 101 and the mask 102) is within the allowable range, the alignment operation is terminated. If the measurement result is outside the allowable range, the control amount (displacement amount of the substrate 101) for making the positional deviation amount within the allowable range is set based on the measurement result.

[0070] The "position offset" is defined by the distance and direction (X, Y, θ) of the position offset. Based on the control amount set, such as Fig. 9 As shown in the state ST92, the position adjustment unit 80 operates. As a result, the substrate support plate 3 is displaced on the XY plane, and the relative position of the substrate 101 with respect to the mask 102 is adjusted.

[0071] Whether the measurement result is within the allowable range can be determined by, for example, calculating the distances between the alignment marks and comparing the average value and the sum of squares of the distances with a preset threshold.

[0072] After the relative position is adjusted, the relative position of the alignment mark of the substrate 101 and the alignment mark of the mask 102 is measured again by the measurement unit SR. If the measurement result is within the allowable range, the alignment operation is terminated. If the measurement result is outside the allowable range, the relative position of the substrate 101 with respect to the mask 102 is adjusted again. Thereafter, the measurement and relative position adjustment are repeated until the measurement result is within the allowable range.

[0073] Here, in order to improve the accuracy of the position adjustment based on alignment, it is required to improve the detection accuracy of each alignment mark by the measuring unit SR. Therefore, as the measuring unit SR, it is preferable to use a camera that can obtain images with high resolution. However, if the resolution of the camera is increased, the depth of field becomes shallower. In order to simultaneously photograph the alignment mark of the substrate 101 and the alignment mark of the mask 102 that are the objects of photography, it is necessary to make the two marks closer in the optical axis direction (Z direction) of the measuring unit SR. On the other hand, there are undulations in the substrate 101 and the mask 102. When adjusting the relative position, it is necessary to avoid contact between the two and damage to the substrate 101.

[0074] In this regard, in the present embodiment, the flatness of the mask 102 can be maintained at a high level by using the electrostatic chuck 103, and the mask 102 can be held in a horizontal position, so that the parallelism between the substrate 101 and the mask 102 can be improved. Furthermore, since the flatness of the substrate 101 is also maintained at a high level by the electrostatic chuck (substrate support plate 3), and the substrate 101 is held in a horizontal position, the parallelism between the substrate 101 and the mask 102 can be improved. Therefore, during alignment, the contact between the substrate 101 and the mask 102 can be prevented, and they can be brought closer, so that more accurate alignment can be performed.

[0075] Next, a film forming operation is performed. First, the substrate 101 and the mask 102 are superimposed on each other. Fig.10 The state ST101 represents its action. When the substrate support plate 3 is lowered, the substrate 101 is placed on the mask 102, and the entire surface to be processed of the substrate 101 contacts the mask 102. The magnet plate 5 abuts against the cooling plate 4, and the magnet plate 5, the cooling plate 4, the substrate support plate 3, the substrate 101, and the mask 102 are in close contact from top to bottom. The mask 102 is attracted by the magnetic force of the magnet plate 5, so that the mask 102 and the substrate 101 can be in close contact as a whole.

[0076] Next, the electrostatic chuck 103 is released from adsorption of the mask 102, and the electrostatic chuck 103 is transported to a retreat position. Fig.10 The state ST102 represents its action. First, the mask 102 is supported by the mask support unit 6. Specifically, the support component 6a is raised to support the mask 102 from the bottom by the claw F1. After the hand of the conveying robot 131 enters under the electrostatic suction cup 103, the support component 7a of the suction cup support unit 7 is lowered to transfer the electrostatic suction cup 103 from the support component 7a to the conveying robot 131. Thereafter, the conveying robot 131 conveys the electrostatic suction cup 103 to a retreat position (in this embodiment, the suction cup storage chamber 141) to which the evaporated material will not adhere during film formation. The preparation for film formation is thus completed. Next, as Fig.11 As shown in the state ST111 , the shutter 10 a is opened to release the vapor deposition material from the vapor deposition unit 10 . The vapor deposition material is vapor deposited onto the substrate 101 through the mask 102 .

[0077] When such film formation is completed, the mask 102 and the substrate 101 are respectively carried out. Fig.11State ST112 represents the action of sending out the mask 102. First, the magnet plate 5 is raised to separate the substrate 101 and the mask 102. After the hand of the transport robot 131 enters under the mask 102, the support member 6a of the mask support unit 6 is lowered to transfer the mask 102 from the support member 6a to the transport robot 131. The transport robot 131 transports the mask 102 to the storage chamber 140.

[0078] Next, the substrate 101 after film formation is sent out. Fig.12 As shown in the state ST121, the support member 6a of the mask support unit 6 is raised to support the substrate 101 from the bottom by the claw F1. The adsorption of the substrate 101 by the substrate support unit 3 is released, and the substrate 101 is transferred to the support member 6a. Fig.12 As shown in the state ST122, after the hand of the conveying robot 121 enters under the substrate 101, the support member 6a of the mask support unit 6 is lowered, and the substrate 101 is transferred from the support member 6a to the conveying robot 121. The conveying robot 121 conveys the substrate 101 to the conveying path 111. Thus, the operation from the feeding of the substrate 101 to the film formation and feeding is completed.

[0079] <Second Embodiment>

[0080] In the first embodiment, the electrostatic chuck 103 is transported from the vacuum chamber 2 to the retreat position during film formation, but the electrostatic chuck 103 may be placed in the vacuum chamber 2 during film formation to attract the mask 102. Therefore, the electrostatic chuck 103 is configured to allow the deposition material to pass therethrough. Fig.13A is a three-dimensional view of the electrostatic chuck 103' of this embodiment. Fig. 13B yes Fig.13A CC line section view.

[0081] The electrostatic chuck 103' is different from the electrostatic chuck 103 in that it has an opening 103d. The opening 103d of the electrostatic chuck 103' is formed between the adsorption portion 103a and the adsorption portion 103b, and has a fan shape when viewed from above. The opening 103d is formed at the same position as each mask portion 102b of the mask 102 (see Figure 3 ) overlap, the evaporated material can reach each mask part 102b through the opening 103d. Since the electrostatic suction cup 103' is exposed to the evaporated material, the evaporated material will adhere to the electrostatic suction cup 103'. In order to facilitate the cleaning of the attached matter, an anti-adhesion plate 104 can be detachably installed on the electrostatic suction cup 103'. The anti-adhesion plate 104 is set in a manner covering the lower surface of the electrostatic suction cup 103' and the inner wall surface of the opening 103d. By replacing the anti-adhesion plate 104, the electrostatic suction cup 103b' can be repeatedly used, and its life can be extended.

[0082] Figure 14~Figure 15 An operation example of the film forming apparatus 1 in this embodiment using the electrostatic chuck 103 ′ is shown. Operations that overlap with those in the first embodiment are omitted as appropriate. Fig.14 The state ST141 of the first embodiment is the same as that of the Figure 8 The state is the same as the state of ST82, indicating that the preparation for the alignment action is completed. Fig.14 The status of ST142 is Fig. 9 The alignment operation shown in the state ST91 and the state ST92 is the same. This embodiment is substantially the same as the first embodiment up to the alignment operation.

[0083] Next, a film forming operation is performed. First, the substrate 101 and the mask 102 are superimposed on each other. Fig.15 The state ST151 represents its action. When the substrate support plate 3 is lowered, the substrate 101 is placed on the mask 102, and in the substrate 101, the entire processed surface of the substrate 101 is in contact with the mask 102. The magnet plate 5 abuts against the cooling plate 4, and the magnet plate 5, the cooling plate 4, the substrate support plate 3, the substrate 101, the mask 102 and the electrostatic suction cup 103 are in a state of close contact from top to bottom. The mask 102 is attracted by the magnetic force of the magnet plate 5, so that the mask 102 and the substrate 101 can be made to be in close contact as a whole. Unlike the first embodiment, the mask 102 is not supported from below by the mask support unit 6, but is supported from below by the suction cup support unit 7 together with the electrostatic suction cup 103.

[0084] Thus, the preparation for film formation is completed. The evaporation is started without withdrawing the electrostatic chuck 103. Fig.15 As shown in the state ST152, the shutter 10a is set to the open state, and the vapor deposition material is released from the vapor deposition unit 10. The vapor deposition material is vapor-deposited onto the substrate 101 via the electrostatic chuck 103 and the mask 102. During film formation, the mask 102 is maintained in a state of being adsorbed by the electrostatic chuck 103, but control to release the adsorption during film formation can also be adopted. The delivery action after film formation is performed in the order of the electrostatic chuck 103, the mask 102, and the substrate 101, and its action is roughly the same as the first embodiment.

[0085] In the present embodiment, the tact time can be improved by not retracting the electrostatic chuck 103 during film formation.

[0086] <Third Embodiment>

[0087] In the first embodiment, the single-arm transfer robot 131 is used to transfer the mask 102 and the electrostatic chuck 103. However, a double-arm transfer robot that can independently transfer the mask 102 and the electrostatic chuck 103 may be used instead. Fig.16This is a schematic diagram of a conveying robot 131' that replaces the conveying robot 131. The conveying robot 131' includes a multi-joint arm 1310 for conveying the mask 102 and a multi-joint arm 1311 for conveying the electrostatic chuck 103. The base parts of the multi-joint arms 1310 and 1311 are arranged on the same axis, but the base parts may be arranged on different axes offset in the horizontal direction. According to this embodiment, the mask 102 and the electrostatic chuck 103 can be continuously conveyed in and out of the vacuum chamber 2, and the production cycle time can be improved.

[0088] In addition, as in the second embodiment, in a structure in which the electrostatic chuck 103 is kept in the vacuum chamber 2 during film formation, the chuck support unit 7 may be replaced by a multi-jointed arm 1311 to support the electrostatic chuck 103 and the mask 102 from below. That is, during film formation, the multi-jointed arm 1311 is in a state of entering the vacuum chamber 2. In the case of this structure, the chuck support unit 7 can be omitted.

[0089] <Other Implementation Methods>

[0090] The present invention can also be implemented by providing a program that implements one or more functions of the above-mentioned embodiments to a system or device via a network or storage medium, and one or more processors in a computer of the system or device read and execute the processing of the program. In addition, it can also be implemented by a circuit (for example, ASIC) that implements one or more functions.

[0091] The present invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, claims are appended to disclose the scope of the invention.

[0092] Description of Reference Numerals

[0093] 1 film forming device, 8 alignment unit, 10 evaporation unit, 101 substrate, 102 mask, 103 electrostatic chuck.

Claims

1. A film forming device comprising: a substrate supporting member, the substrate supporting member supporting the substrate; an alignment member for aligning the substrate and the mask; and a vapor deposition member that releases a vapor deposition substance toward the substrate via the mask, The film forming device is characterized in that The film forming apparatus includes an electrostatic chuck configured to attract the mask from a side opposite to the substrate during alignment by the alignment member.

2. The film forming device according to claim 1, characterized in that: The mask has an opening for the vapor deposition material to pass through. The electrostatic chuck partially attracts a portion of the mask other than the opening.

3. The film forming device according to claim 1, characterized in that: The mask includes a plurality of thin-walled portions having openings for the vapor deposition material to pass therethrough and a thick-walled portion surrounding the plurality of thin-walled portions. The electrostatic chuck adsorbs the thick wall portion.

4. The film forming device according to claim 1, characterized in that: The film forming apparatus includes a transport member that transports the electrostatic chuck whose adsorption to the mask is released to a retreat position where the vapor deposition material discharged from the vapor deposition member does not adhere before vapor deposition is performed by the vapor deposition member.

5. The film forming device according to claim 1, characterized in that: The substrate supporting member includes an electrostatic chuck that attracts the substrate.

6. The film forming device according to claim 4, characterized in that: The film forming apparatus includes a mask support member that supports the mask before the electrostatic chuck releases the attraction of the mask.

7. The film forming device according to claim 1, characterized in that: The electrostatic chuck comprises: a frame-shaped first adsorption portion; and The second adsorption portion has a lattice shape, and the second adsorption portion has a lattice shape, and is arranged inside the first adsorption portion.

8. The film forming device according to claim 1, characterized in that: The alignment member comprises: a measuring member that measures a positional deviation amount between the substrate and the mask; and A position adjusting member is provided for adjusting a relative position between the substrate and the mask based on a measurement result of the measuring member.

9. A film forming method comprising: performing an alignment process of aligning the substrate and the mask; and a vapor deposition step of releasing a vapor deposition material onto the substrate through the mask, The film forming method is characterized in that In the alignment step, the mask is sucked by an electrostatic chuck from a side opposite to the substrate.

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