Coating method for semiconductor device

Abstract

The coating method for a semiconductor device according to the present invention comprises: a step a of containing a metal powder having the same composition as a base material as a coating material; and a step b of melting the coating material of the metal powder by using a laser beam having an intensity of 300 W to 1000 W, thereby forming a texture coating layer, the distance between the end of a laser device irradiated by the laser beam and the coating surface of the base material being maintained within 8 mm to 20 mm, thereby being able to form a texture coating layer having the same intensity as the base material.

Description

Technical Field

[0001] The present invention relates to a coating method for semiconductor devices, and more particularly, to a method for manufacturing a coating film suitable for semiconductor devices using PVD (physical vapor deposition). Background Art

[0002] Arc spraying is the main method used for surface treatment of semiconductor devices used in the PVD (Physical Vapor Deposition) process.

[0003] The arc spraying method is a method of providing a metal wire, melting it through arc discharge, and then applying it to the surface of an object such as a chamber by spraying. In the prior art, aluminum (Al) wire is mainly used as the metal wire of the thermal spraying material, and two aluminum (Al) wires or different types of metal wires are provided so that they can be melted by arc discharge.

[0004] However, with the development of semiconductor equipment such as PVD, the state and conditions of equipment and gas are changing. The state and conditions in the reaction chamber that change with the development of these technologies have become very important variables in the quality management of the coating. The arc spraying method using metal wire in the prior art cannot cope with the changes in the state and conditions of equipment and gas as described above, and arc fluctuations and asymmetric melting occur, so the PVD process inevitably forms unfavorable conditions in the reaction chamber and has limitations. In addition, since the adhesion of the deposited particles (thin film material) dispersed to the inner wall of the reaction chamber is reduced, the problem of easy peeling and the problem of contamination and defects on the thin film side deposited on one side are becoming more and more serious, resulting in the problem of reducing its efficiency during PVD process treatment.

[0005] In particular, the arc spraying method in the prior art has the disadvantage of high porosity in the coating formed by the coating method. Such porosity will cause outgassing problems in the process, thereby causing a problem of prolonged backup time, and due to the large number of particle sources in the surface characteristics of the formed coating, the overall process yield is reduced.

[0006] As a prior art, Korean Authorized Patent Gazette No. 10-0322416 discloses a technology for manufacturing a focus ring having a textured surface that can be stabilized by controlling the formation of an impurity coating in a focus ring device used in a plasma etching device and a process, and further, it is confirmed that a component of a plasma processing chamber manufactured in Korean Publication No. 2013-0044170 includes a scratch shape of 1 micron to 2 microns, thereby providing a method for reducing particle contamination of wafers processed in the chamber.

[0007] Therefore, it is necessary to develop a technology that can reduce the particle source and the porosity, thereby improving the process yield and effectively bonding the process by-products, thereby improving the coating quality of the product.

[0008] Therefore, the present invention was obtained by repeated research on a coating method for forming a coating layer having a prescribed pattern that can not only improve density and porosity but also effectively conform to physical vapor deposition process byproducts. Summary of the invention

[0009] Problem that the invention aims to solve

[0010] The main object of the present invention is to provide a method for manufacturing a coating film, wherein the coating film has excellent bonding strength and hardness, forms a high-density and dense thin film, and has excellent adhesion of by-products generated during the physical vapor deposition process.

[0011] The present invention also provides a component formed with a coating film manufactured by the coating film manufacturing method, which has excellent adhesion of process byproducts, thereby being able to produce a product with excellent quality during a physical vapor deposition process.

[0012] Means used to solve problems

[0013] In order to achieve the above-mentioned purpose, an implementation example of the present invention provides a coating method for semiconductor equipment, which is used to form a coating on the coating surface of a substrate constituting the semiconductor equipment, and is characterized in that it includes: step a, preparing a metal powder with the same composition as a base material as a coating material, and step b, melting the coating material of the metal powder by using a laser beam with an intensity of 300W to 1000W, thereby forming a texture coating; the distance between the end of the laser device irradiated by the laser beam and the coating surface of the substrate is 8mm to 20mm, and the ratio of the hardness of the texture coating to the hardness of the base material is 0.98 to 1.02.

[0014] In a preferred implementation example of the present invention, the speed of the conveying gas for supplying the coating material may be 1 l / min to 20 l / min, and the speed of the nozzle gas may be 1 l / min to 30 l / min.

[0015] In a preferred implementation example of the present invention, the diameter of the laser beam may be 0.8 mm to 1.5 mm.

[0016] In a preferred implementation example of the present invention, the scanning speed of the laser beam can be 8 m / min to 12 m / min.

[0017] In a preferred implementation example of the present invention, the porosity of the texture coating may be less than 0.1%.

[0018] In a preferred implementation example of the present invention, the pattern of the texture coating may be any one selected from a lattice, a circle loop, a honeycomb loop, and a wave loop.

[0019] In a preferred implementation example of the present invention, the laser beam can be provided by any one selected from a CO2 laser, a Nd:YAG rod / disk laser, a diode laser and a fiber laser.

[0020] In a preferred implementation example of the present invention, the laser beam can be provided by using a 3D printing device in a directed energy deposition (DED) manner.

[0021] In a preferred implementation example of the present invention, the semiconductor device that can be applied for coating can be any group selected from a single piece shield, a cover ring, a shutter disk, a deposition ring, a combined shield, an upper shield, a lower shield, an inner shield, an earth shield, a platen ring, an insulator, a plate tag shield URP, a plate tag shield LOW, a shield mask, a shield mask base, a shield chamber upper, a shield shutter upper, and a shield shutter lower.

[0022] In yet another preferred implementation example of the present invention, the present invention provides a component manufactured by the semiconductor device using a coating method.

[0023] Effects of the Invention

[0024] According to the present invention, by executing a coating method using metal powder and combining it with semiconductor application coating equipment (for example, 3D coating equipment that emits a laser beam, etc.), a high-density coating can be formed on the coating surface of the substrate compared to the existing arc spraying method, and a coating film with significantly reduced porosity can be formed.

[0025] In addition, the coating film manufactured according to the present invention forms a texture coating layer with the same metal component as the base material, so that the base material and the texture coating layer have excellent adhesion, and the hardness of the texture coating layer shows the same hardness as the base material.

[0026] In addition, in a semiconductor manufacturing device coated with a coating film manufactured according to the present invention, since a texture coating having a variety of shapes is formed, the specific surface area is increased compared to the base material, so that the process by-products generated during the physical vapor deposition process are effectively adhered to the texture coating, thereby being able to produce semiconductor products with excellent quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 This is an embodiment that realizes a pattern that can be produced by the coating method for the semiconductor device of the present invention.

[0028] Figure 2 The following are photographs of coatings formed by the coating method for semiconductor devices according to Examples 1 and 2 of the present invention and the results of measuring specific surface areas.

[0029] Figure 3 and Figure 4 is a SEM photograph of a coating layer formed by the coating method for a semiconductor device according to Example 1 of the present invention.

[0030] Figure 5 These are the results of measuring the width and thickness of the coating patterns formed in Examples 9 to 13 and the flatness of the base material. DETAILED DESCRIPTION

[0031] Unless otherwise defined, all technical terms and scientific terms used in this specification have the same meanings as those commonly understood by experts skilled in the art to which the invention belongs. Generally speaking, the nomenclature used in this specification is well known and commonly used in the art.

[0032] Throughout the specification of the present application, unless there is a description to the contrary, when a part “includes” a certain constituent element, it means that other constituent elements are also included, rather than excluding other constituent elements.

[0033] According to one embodiment of the present invention, there is provided a semiconductor device coating method for forming a coating layer on a coating surface of a substrate constituting a semiconductor device.

[0034] The coating method for semiconductor equipment according to the present invention uses metal powder as a coating material to form a coating on the coating surface of a base material constituting a semiconductor equipment for semiconductor manufacturing, and the coating work can be performed by combining a coating method using semiconductor application coating equipment (for example, a 3D printing equipment using a laser beam, etc.).

[0035] Specifically, the coating method for semiconductor equipment according to the present invention is characterized in that it includes: step a, preparing a metal powder with the same composition as a base material as a coating material, and step b, melting the coating material of the metal powder by using a laser beam with an intensity of 300W to 1000W to form a texture coating; the distance between the end of the laser device irradiated by the laser beam and the coating surface of the substrate is 8mm to 20mm, and the hardness of the texture coating is almost the same as the hardness of the base material.

[0036] The above-mentioned almost identical range means that the ratio of the hardness of the texture coating layer to the hardness of the base material is in the range of 0.98 to 1.02.

[0037] First, a metal powder having the same composition as that of a base material is prepared as a coating material (step a).

[0038] The coating material preferably uses a powdered metal powder having a particle size of 40 μm to 180 μm or 44 μm to 150 μm.

[0039] Here, when the metal powder uses particles smaller than 40 μm, vaporization or reduced film-forming rate may occur due to the small particle size. When the metal powder uses particles larger than 180 μm, the energy used for coating needs to be increased. As the energy increases, relatively smaller particles within the particle size range of the coating material may cause the same problems as particles smaller than 40 μm.

[0040] Next, the metal powder is melted by a laser beam, and a texture coating is formed on the coating surface by the melted metal powder (step b).

[0041] At this time, the semiconductor application coating equipment can be used by selecting the directed energy deposition (DED) method in the 3D printing equipment.

[0042] The 3D printing apparatus may include a laser device, a focusing lens, a powder injection nozzle, and a shielding gas injection port.

[0043] The laser device has the function of generating a laser beam inside and irradiating the generated laser beam forward.

[0044] Here, in the coating step, for the distance of the melted metal powder, the distance between the end of the 3D printing device and the coating surface of the base material is preferably maintained at 8 mm to 20 mm, thereby improving the coating efficiency as a whole, for example, ensuring excellent mechanical properties while reducing particle generation, etc.

[0045] When the distance between the end of the 3D printing device and the coated surface of the base material is less than 8 mm, problems may occur due to uneven coating and interference between the end of the 3D printing device and the base material. In addition, when the distance between the end of the 3D printing device and the coated surface of the base material is greater than 20 mm, it may become a factor that reduces the film formation rate.

[0046] The speed of the conveying gas for supplying the coating material made of the metal powder is preferably 1l / min to 20l / min, and the speed of the nozzle gas for spraying the coating material is preferably 1l / min to 30l / min. The speed of the conveying gas is more preferably 4l / min to 20l / min, and the speed of the nozzle gas for spraying the coating material is more preferably 7l / min to 20l / min.

[0047] In addition, the laser device includes any one selected from a CO2 laser, a Nd:YAG (Neodymium:Yttrium Aluminum Garnet) rod / disk laser, a diode laser, and a fiber laser.

[0048] In addition, the laser beam irradiated from the laser device is preferably supplied with a power in the intensity range of 300 W to 1000 W, and in addition, the diameter of the laser beam is preferably 0.8 mm to 1.5 mm.

[0049] Here, when the intensity of the laser beam is less than 300 W or the diameter of the laser beam is less than 0.8 mm, it may be difficult to form a coating with a uniform pattern due to insufficient amount of melted metal powder. In addition, when the intensity of the laser beam is greater than 1000 W or the diameter of the laser beam is greater than 1.5 mm, the amount of melted metal powder is over-sprayed, so the pattern of the coating may agglomerate.

[0050] In addition, the scanning speed of the laser beam is preferably 8 m / min to 12 m / min.

[0051] When the scanning speed of the laser beam is less than 8 mm / s, the amount of melted metal powder sprayed is excessive, so the pattern of the coating may agglomerate, and when the scanning speed of the laser beam exceeds 12 mm / s, the amount of melted metal powder is insufficient, so it may be difficult to form a coating with a uniform pattern.

[0052] The coating material made of the above-mentioned metal powder is injected into the coating surface on the base material according to the metal flow by using a 3D printing device, so that the laser beam melts the metal powder. At the same time, a molten pool is formed on the coating surface of the base material, thereby being able to form a coating of melted metal powder on the coating surface of the base material.

[0053] In addition, by using the 3D printing device, not only can the coating layer be formed in a desired shape, but the coating layer can also be formed into a plurality of layers of two or more layers, thereby increasing the specific surface area of ​​the coating layer to a desired value or more.

[0054] In the coating step, a molten pool is formed on the coating surface on the base material, and pores are hardly formed at the boundary surface between the coating and the base material, and excellent adhesion is achieved between the coating and the base material.

[0055] By using the 3D printing device, metal powder can be melted in a short time and a coating of a desired shape can be formed. Figure 1 As shown, coatings having various shapes such as lattice, circle loop, honeycomb loop, and wave loop structures can be formed.

[0056] The coating method using metal powder according to the present invention can be applied to all semiconductor devices used for semiconductor deposition processes including semiconductor devices, wherein the semiconductor devices include a one piece shield, a cover ring, a shutter disk, a deposition ring, a combined shield, an upper shield, a lower shield, an inner shield, an earth shield, a platen ring, an insulator, a plate tag shield URP, a plate tag shield LOW, a shield mask, a shield mask base, a shield chamber upper, a shield shutter upper, a shield shutter lower, and the like.

[0057] Hereinafter, the present invention will be described in more detail by way of examples. However, the following examples are only for illustrating the present invention, and the present invention is not limited to the following examples.

[0058] Example 1 and Example 2

[0059] On a SUS304 base material, SUS316L metal powder particles were used to form a lattice pattern coating using a laser beam under the process conditions described in Table 1 below. At this time, the pattern formation was performed once and twice, respectively.

[0060] In Example 1, the metal pattern was deposited once, so the specific surface area increased by about 20% compared to the base material. In Example 2, the metal pattern was deposited twice, and it was confirmed that the specific surface area increased by about 64% compared to the base material.

[0061] Table 1

[0062]

[0063] The Vickers hardness of each of the coatings produced in Example 1 and Example 2 and the base material forming the coatings was measured. As a result, it was confirmed that the pattern of the coating produced by the coating method of the present invention exhibited a hardness in almost the same range as that of the base material.

[0064] Table 2

[0065]

[0066] Example 3 and Example 4

[0067] On a SUS304 base material, SUS304 metal powder particles were used, and a lattice pattern coating was formed using a laser beam under the process conditions described in the above Table 1. At this time, the pattern formation was performed once and twice respectively.

[0068] The Vickers hardness of each of the coatings produced in Example 3 and Example 4 and the base material forming the coatings was measured.

[0069] Table 3

[0070]

[0071] Example 5 and Example 6

[0072] On the SUS316L base material, SUS304 metal powder particles were used, and a lattice pattern coating was formed using a laser beam under the process conditions described in Table 1 above. At this time, the pattern formation was performed once and twice respectively.

[0073] The Vickers hardness of each of the coatings produced in Example 5 and Example 6 and the base material forming the coatings was measured.

[0074] Table 4

[0075]

[0076] Example 7 and Example 8

[0077] On a SUS316L base material, SUS316L metal powder particles were used to form a lattice pattern coating using a laser beam under the process conditions described in Table 1 above. At this time, the pattern formation was performed once and twice, respectively.

[0078] The Vickers hardness of each of the coatings produced in Example 7 and Example 8 and the base material forming the coatings was measured.

[0079] Table 5

[0080]

[0081] At this time, in Examples 1 to 8, regardless of the type of stainless steel base material and powder, the same process parameters were used, and it was confirmed that there was almost no difference in coating performance for each type of steel.

[0082] Example 9 to Example 13

[0083] On the SUS304 base material, SUS316L metal powder particles are used, and a lattice pattern coating is formed using a laser beam under the process conditions described in the following Table 6. At this time, the metal pattern is formed at a laser beam scanning speed of 2m / min, 4m / min, 6m / min, 8m / min, and 10m / min, respectively.

[0084] In the attached Figure 5 , the results of measuring the width and thickness of the coating patterns formed in Examples 9 to 13 and the flatness of the base material are shown. As a result, it was confirmed that when the speed of the laser beam was too low, the laser molten pool was formed at one point for a long time, thereby not only increasing the width and thickness of the pattern, but also deforming the base material on which the metal pattern was formed, thereby increasing the flatness of the base material.

[0085] Table 6

[0086]

Claims

1. A coating method for semiconductor devices, the method being used to form a coating on a coating surface of a substrate constituting a semiconductor device, characterized in that: include: Step a, using metal powder having the same composition as the base material as the coating material, and Step b, forming a textured coating by melting the coating material of the metal powder using a laser beam with an intensity of 300W to 1000W; The distance between the end of the laser device irradiated with the laser beam and the coating surface of the substrate is 8 mm to 20 mm, The ratio of the hardness of the texture coating to the hardness of the base material is 0.98 to 1.

02.

2. The method for coating a semiconductor device according to claim 1, wherein: The speed of the conveying gas supplying the coating material is 1 l / min to 20 l / min, The nozzle gas velocity is 1 l / min to 30 l / min.

3. The method for coating a semiconductor device according to claim 1, wherein: The diameter of the laser beam is 0.8 mm to 1.5 mm.

4. The method for coating a semiconductor device according to claim 1, wherein: The scanning speed of the laser beam is 8 m / min to 12 m / min.

5. The semiconductor device coating method according to claim 1, characterized in that: The porosity of the texture coating is less than 0.1%.

6. The semiconductor device coating method according to claim 1, characterized in that: The pattern of the texture coating is selected from any one of a lattice, a ring cycle, a honeycomb cycle and a wave cycle.

7. The semiconductor device coating method according to claim 1, characterized in that: The laser beam is provided from any one selected from a CO2 laser, a Nd:YAG rod / disk laser, a diode laser, and a fiber laser.

8. The method for coating a semiconductor device according to claim 1, wherein: The laser beam is provided by energy-directed deposition using a 3D printing device.

9. The semiconductor device coating method according to claim 1, characterized in that: The semiconductor equipment that can be applied for coating is selected from any group consisting of a monolithic shield, a covering ring, a door plate, a deposition ring, a combined shield, an upper shield, a lower shield, an internal shield, a grounded shield, a platen ring, an insulator, a board label shield URP, a board label shield LOW, a shielding mask, a shielding mask base, a shielding chamber upper part, a shielding door upper part, and a shielding door lower part.

10. A component, characterized in that: It is manufactured by the manufacturing method according to any one of claims 1 to 9.

Images