Vertical emitting semiconductor laser device, array and chip with preferred orientation

Abstract

A vertical emitting semiconductor laser device (1) is proposed, comprising: a semiconductor material having an optical axis; a mesa (2) for emitting light in a light emission direction (7); a contact (3) for electrically contacting the table top (2), the contact having a contact opening (4); wherein the connection openings (4) are arranged in a preferred direction (5); characterized in that the optical axis is arranged in a preferred direction (5).

Description

Technical Field

[0001] The invention relates to a vertically emitting semiconductor laser device according to claims 1, 2 and 3. Furthermore, the invention relates to an array according to claim 9 and a chip according to claim 15. Background Art

[0002] Polarized laser radiation is used, for example, in the field of sensing and illumination. The laser power required for this purpose usually requires an array with a plurality of vertically emitting semiconductor laser devices and / or a large number of mesas. For applications of polarized laser radiation emitted from vertically emitting semiconductor laser devices (in particular "vertical-cavity surface-emitting lasers", VCSELs for short) and / or VCSEL arrays, it is advantageous if the polarization direction of the laser beams emitted by all mesas is the same. So far, surface gratings have only been used to stabilize the required polarization of a single mesa, while the polarization of multiple mesas has been ignored.

[0003] Although multiple mesas have the same surface grating, it was observed in experiments that some mesas in the array emit light with a polarization that is rotated relative to the surface grating. In addition, it was found that the polarization direction of the laser radiation emitted by the array and / or individual mesas is rotated by several degrees relative to the average or target position of the polarization direction. This leads to a decrease in the polarization degree and the contrast in a disadvantageous way in different applications. Summary of the invention

[0004] Based on this, the task of the present invention is to provide an improved vertical emitting semiconductor laser device. Another task of the present invention is to provide an improved array having such a semiconductor laser device. In addition, the task of the present invention is to provide an improved chip having such a vertical emitting semiconductor laser device.

[0005] This object is achieved according to the invention by a vertically emitting semiconductor laser component, an array and a chip, which are characterized by what is stated in the independent claims. Advantageous embodiments are the subject matter of the dependent claims.

[0006] The vertical emitting semiconductor laser components and preferred embodiments thereof are preferably designed and arranged for use in the array and chip according to the invention and preferred embodiments thereof. The array according to the invention is preferably designed and arranged for use in the chip according to the invention and preferred embodiments thereof.

[0007] All features of the subject matter described herein and all features of the claimed subject matter can be used alone or in combination with each other, are compatible with each other and are used for further expansion of each other, as long as no logical contradiction arises, and are disclosed herein. The following references to any object or feature (including the indefinite article "a" and the definite article "the"), two objects or two features, or other numbers of objects or features, unless otherwise expressly stated or a logical contradiction arises, should be understood as not excluding the existence of other such objects and features, but rather that the invention also covers these objects and features. The reference signs in the claims should not be understood as restrictive, but are only used to improve the readability of the claims.

[0008] According to a first aspect of the present invention, a vertically emitting semiconductor laser device includes a semiconductor material having an optical axis, a table for emitting light, and a connection portion for electrically connecting the table. The connection portion has a connection portion opening, and the connection portion opening is arranged along a preferred direction. According to the first aspect of the present invention, the optical axis is arranged along the preferred direction.

[0009] According to a second aspect of the present invention, a vertically emitting semiconductor laser device includes a table for emitting light in a light emission direction and a connection portion for electrically connecting the table. The connection portion has a connection portion opening. In addition, according to the second aspect of the present invention, the vertically emitting semiconductor laser device includes a surface grating for polarized light. The surface grating is preferably arranged above the table in the light emission direction. The connection portion opening is arranged along a preferred direction. According to the second aspect of the present invention, the surface grating is arranged perpendicular to or parallel to the preferred direction.

[0010] According to a third aspect of the present invention, a vertically emitting semiconductor laser device includes a table for emitting light in a light emission direction and a connection portion for electrically connecting the table. The connection portion has a connection portion opening; the connection portion opening is arranged along a preferred direction. According to the third aspect of the present invention, the table is elliptical in a top view along the light emission direction, and the ellipse tapers perpendicularly or parallel to the preferred direction in at least one region.

[0011] According to a fourth aspect of the present invention, an array comprises a plurality of vertically emitting semiconductor laser devices, wherein at least one semiconductor laser device (preferably all of the vertically emitting semiconductor laser devices) are constructed in accordance with the present invention.

[0012] According to a fifth aspect of the present invention, a chip comprises a vertically emitting semiconductor laser device according to the present invention and / or an array according to the present invention. The chip has a height along the light emission direction, and a width and a length perpendicular to the light emission direction, wherein the length is greater than the width, and the length and / or the width are arranged along a preferred direction.

[0013] Preferably, the vertically emitting semiconductor laser device comprises a semiconductor material having an optical axis. Preferably, the optical axis is arranged along the preferred direction, or perpendicular to the preferred direction, or at an angle of 45 degrees to the preferred direction. Preferably, the optical axis is not arranged at an angle other than 180 degrees, 90 degrees or 45 degrees relative to the preferred direction.

[0014] Preferably, the vertically emitting semiconductor laser device comprises a surface grating for polarizing light, which surface grating is particularly preferably arranged above the table in the light emission direction. Preferably, the surface grating is arranged perpendicular to the preferred direction, or parallel to the preferred direction, or at an angle of 45 degrees to the preferred direction. Preferably, the surface grating is not arranged at an angle other than 180 degrees, 90 degrees or 45 degrees relative to the preferred direction.

[0015] Preferably, the table is elliptical in the direction of light emission in a top view, and the ellipse particularly preferably tapers perpendicularly to the preferred direction, parallel to the preferred direction, or at an angle of 45 degrees to the preferred direction in at least one region. Preferably, the ellipse does not taper at an angle other than 180 degrees, 90 degrees or 45 degrees relative to the preferred direction.

[0016] A “vertically emitting semiconductor laser device” is in particular a laser diode. Preferably, the vertically emitting semiconductor laser device is a surface emitter. Preferably, the vertically emitting semiconductor laser device is a “vertical-cavity surface-emitting laser”, VCSEL for short. In particular in a VCSEL, the light is emitted perpendicular to the plane of the chip. This is in contrast to an edge-emitting laser diode, in which the light is emitted at one or both edges of the chip.

[0017] "Semiconductor materials" especially those with conductivity >10 4 S / cm and <10 -8 S / cm. The semiconductor material comprises or consists in particular of elements and / or species selected from silicon, gallium, indium, germanium and arsenic. Preferably, the semiconductor material comprises or consists of gallium arsenide.

[0018] An "optical axis" is in particular a crystal axis of a crystalline material. The optical axis is preferably a direction of an optically anisotropic and preferably birefringent crystalline material, along which the polarization components of the light experience the same refractive index. Preferably, the optical axis is arranged along the direction of the uniaxial principal refractive index of a uniaxial crystal, in particular in a crystal system with trigonal, tetragonal or hexagonal geometry. Preferably, a light beam along the optical axis behaves as an isotropic crystal. Preferably, the optical axis has the same orientation in each layer of the layer stack along the epitaxial layer stack.

[0019] The "table" is preferably configured as a protrusion having a flat surface and steep sides.

[0020] The "light" is preferably laser light. Preferably, the wavelength of the light is 500 nm to 1600 nm, particularly preferably 900 nm to 1500 nm, and most preferably 1300 nm to 1500 nm.

[0021] The “light emission direction” is in particular the emission direction of light emitted from the mesa. Preferably, the light emission direction is perpendicular to the chip surface, particularly preferably perpendicular to the planar surface of the mesa.

[0022] The "connection portion" is particularly used for conducting electric current, preferably for feeding electric energy into the table and / or for electrical connection between the table and an energy source and / or for electrical connection between two table tops. The connection portion is preferably a p-type connection portion. Alternatively, the connection portion is preferably an n-type connection portion. The connection portion is particularly an annular structure. Preferably, the connection portion has an open shape. Preferably, the connection portion is constructed as a single-opening or multi-opening ring along the light emission direction in a top view. The connection portion can be composed of a plurality of connection portion sub-regions. Typically, the connection portion is a metal connection portion, formed by a metal layer. Through the above-mentioned improvements, the connection portion has better machinability.

[0023] The “connection opening” is preferably a recess of the connection, in particular a tapered portion, or an opening of the connection. In the region of the connection opening, preferably less connection material is deposited, or the connection opening is completely free of connection material. Preferably, the connection opening is electrically insulating, in particular, does not conduct current in the region of the connection opening. The connection opening is preferably elongated, wherein the length of the connection opening in the longitudinal direction is greater than the width of the connection opening in the width direction.

[0024] An orientation "along" a direction (especially a preferred direction or a light emission direction) is especially a parallel orientation. This means, for example, that the extension direction of the object (especially the longitudinal direction of the access opening) is identical to the preferred direction.

[0025] The "surface grating" is preferably an optically active grating, in particular a polarization grating for polarized light. Preferably, the surface grating has two polarization directions, particularly preferably, it has different reflectivities for the two polarization directions. The surface grating preferably selects the desired polarization direction, particularly preferably by reflectivity. The surface grating is particularly configured to maximize the reflection of the desired polarization and minimize the reflection perpendicular to the desired polarization. Preferably, the surface grating is configured to maximize the reflection difference between the two polarization directions. The surface grating is preferably arranged on the upper Bragg reflector of the VCSEL. The surface grating is preferably applied over the entire wafer and has the same polarization direction everywhere. Alternatively, the surface grating is preferably arranged in the mesa area, particularly preferably only in the mesa area. Preferably, the surface grating is oriented along the crystal axis of the gallium arsenide semiconductor material. In particular, the surface grating is etched into the gallium arsenide material and forms a structure with a depth of 50nm to 100nm along the light emission direction, preferably 70nm. These structures preferably have a periodic spacing of 100nm to 200nm perpendicular to the light emission direction, particularly preferably 140nm.

[0026] An "ellipse" is in particular any ellipse without an axis of symmetry. Preferably, the ellipse is symmetrical with respect to at least one axis of symmetry. Preferably, the ellipse is a closed quadratic continuously differentiable convex curve in a plane. An ellipse is in particular an ellipse in shape (Ellipse form). Preferably, the ellipse is not a circle. Preferably, the ellipse has two opposite regions which taper perpendicularly or in a preferred direction. The ellipse is preferably a flat, rounded, convex shape, similar to the outline of an eye. The ellipse is preferably an eye shape.

[0027] A "groove" is in particular a recess, preferably a recess in the light emission direction. Preferably, the groove is a recess in the layer stack. Preferably, the groove comprises regularly arranged recesses. The groove is preferably used to form a mesa, wherein preferably the inner contour of the groove defines the shape of the mesa.

[0028] The "hexagonal" arrangement is preferably a honeycomb arrangement. In the hexagonal arrangement, the vertically emitting semiconductor laser components are preferably arranged in a regular hexagonal tiling (Parkettierung), particularly preferably without gaps. Preferably, in the hexagonal tiling, adjacent vertically emitting semiconductor laser components are connected via complete edges, particularly preferably not via corners or edge sections.

[0029] Preferably, the vertical emitting semiconductor laser device has other connection part openings, and particularly preferably has a plurality of other connection part openings. Preferably, the connection part includes other connection part openings. The other connection part openings are especially arranged along the preferred direction or perpendicular to the preferred direction or at an angle of 45 degrees to the preferred direction. Preferably, the other connection part openings have the same structure as the connection part opening, especially the same geometric shape, and preferably overlap with the connection part opening by rotation and translation. Preferably, the connection part has a plurality of connection part openings, which are respectively arranged along the preferred direction and / or perpendicular to and / or at an angle of 45 degrees to the preferred direction.

[0030] Preferably, the vertically emitting semiconductor laser device comprises a trench, which particularly preferably at least partially surrounds the mesa, most preferably completely surrounds the mesa.

[0031] Preferably, the contact portion comprises a plurality of contact portion connections. In particular, at least two of the plurality of contact portion connections have different sizes.

[0032] The “via connection” is preferably a via subregion of the via. The via connection preferably comprises a via or is designed as a via. The via is preferably a p-type via.

[0033] Preferably, one of the connection parts with different sizes is arranged along the preferred direction or perpendicular to or at an angle of 45 degrees to the preferred direction. Preferably, two opposite connection parts have substantially the same size. Preferably, two connection parts that are perpendicular to the light emission direction and opposite to each other are substantially the same size. "Substantially" includes usual manufacturing tolerances. Preferably, the connection part has a plurality of connection parts, which are arranged along the preferred direction and / or perpendicular to the preferred direction and / or at an angle of 45 degrees to the preferred direction, respectively.

[0034] In particular, the groove is elliptical in the direction of light emission in a top view, the ellipse preferably tapering perpendicularly to or along the preferred direction in at least one region. Alternatively, the groove is circular in the direction of light emission in a top view. Preferably, the shape of the optical aperture is determined by the shape of the table.

[0035] Preferably, the elliptical curve of the groove is consistent with the elliptical curve of the table. Preferably, the curve of the connection portion corresponds to the curve of the table. Particularly preferably, the connection portion is elliptical in the light emission direction in a top view, and the ellipse preferably tapers perpendicularly to or along the preferred direction in at least one region. Preferably, the elliptical curve of the connection portion corresponds to the elliptical curve of the table.

[0036] Preferably, the vertically emitting semiconductor laser device comprises an optical aperture, which is used to emit light. Basically, the shape of the optical aperture is approximately the same as the shape of the table. In particular, this is a result of the oxidation process, in which the optical aperture is formed. Preferably, the shape of the optical aperture is slightly different from the shape of the table. In particular, for an elliptical table, the tapering region of the optical aperture is smoother, wherein the tip of the tapering region of the optical aperture is more rounded compared to the tip of the tapering region of the table. Preferably, the ellipse of the optical aperture is increased compared to the ellipse of the table, in particular the curvature of the curve run in a top view of the optical aperture is greater than the curvature of the curve run in a top view of the table, preferably in opposite parts of the respective curves.

[0037] In a preferred array, the vertically emitting semiconductor laser devices are arranged in a top view along the light emission direction in an equilateral triangle, preferably an exact equilateral triangle. "Substantially" includes the usual manufacturing tolerances, and in particular in the case of strong elliptical shapes, deviations from an exact equilateral shape of up to 25% are permitted.

[0038] Preferably, the vertical emitting semiconductor laser devices are arranged in a hexagon along the light emission direction in a plan view.

[0039] Preferably, the vertically emitting semiconductor laser devices are arranged in a rectangular shape along the light emitting direction in a plan view.

[0040] A "rectangular" arrangement is preferably a square arrangement. In a rectangular arrangement, the vertically emitting semiconductor laser devices are preferably arranged in a square tile. Preferably, in the square tile, adjacent vertically emitting semiconductor laser devices are connected by complete edges, particularly preferably not by corners or edge portions.

[0041] Preferably, the array comprises at least four vertically emitting semiconductor laser devices. Preferably, the four vertically emitting semiconductor laser devices (preferably all vertically emitting semiconductor laser devices) have two through-portion connection terminals. In particular, the vertically emitting semiconductor laser devices in the edge region of the array may have only one through-portion connection terminal.

[0042] Preferably, two oppositely disposed contact connections are connected via a conductor track. A “conductor track” is in particular an electrically conductive connection having a two-dimensional path. Preferably, the conductor track is used to connect the vertically emitting semiconductor laser components to each other and / or between the vertically emitting semiconductor laser components and a power supply. Preferably, the conductor track is used to transmit current. Preferably, the conductor track is used to transmit temperature.

[0043] Preferably, the crossed conductor tracks are spaced apart from each other at least in the crossing region in the light emission direction, and are particularly preferably arranged one above the other in an alternating manner. Preferably, the conductor tracks cross at an angle of 90 degrees or 45 degrees. In particular, the crossed conductor tracks are electrically isolated from each other.

[0044] The "intersection region" is preferably a region in which two conductor tracks are arranged one above the other, in other words, cross, wherein one conductor track is arranged above the other conductor track in a bridging manner. Preferably, in the intersection region, no current transfer occurs between the crossed conductor tracks. The intersection region is particularly preferably electrically insulated, so that most preferably no current transfer occurs between the crossed conductor tracks. Preferably, in the intersection region, no temperature transfer occurs between the crossed conductor tracks, or at least the temperature transfer is significantly lower than along the conductor tracks. The intersection region is particularly preferably thermally insulated, so that no heat transfer occurs between the crossed conductor tracks, or at least the heat transfer is significantly lower than along the conductor tracks. Preferably, the conductor tracks form a mesh structure.

[0045] The array preferably comprises a plurality of individually addressable array sub-areas, preferably having at least one vertically emitting semiconductor laser device. Preferably, the array sub-areas have different polarizations, in particular polarizations rotated by 90 degrees. Preferably, the vertically emitting semiconductor laser devices of a single array sub-area have uniform polarization.

[0046] Preferably, the array comprises at least two rows of vertically emitting semiconductor laser devices, which rows are particularly preferably arranged parallel to each other. These rows can represent array sub-areas. Preferably, the access openings of all vertically emitting semiconductor laser devices in a row are arranged directly above each other in a preferred direction. Preferably, in a hexagonal arrangement, the rows are arranged staggered with each other. Preferably, in a rectangular arrangement, four vertically emitting semiconductor laser devices are arranged at the corners of the rectangle, particularly preferably, every two adjacent vertically emitting semiconductor laser devices are arranged in a row.

[0047] In experiments, it was found that through all the above features and feature combinations, multiple beneficial effects are produced, which help to improve vertical emitting semiconductor laser devices, arrays and chips.

[0048] Advantageously, many effects influencing the birefringence of the table and thus the polarization direction are concentrated by a fixed orientation relative to the preferred direction. These effects thus act particularly advantageously in the same direction. These effects are in particular concentrated and directed in one direction.

[0049] It turns out that arranging all effects in parallel is more advantageous than trying to have the effects cancel each other out or arranging them in opposite directions, because even small deviations in the orientation of the effects can lead to uncontrollable overall behavior.

[0050] For example, mechanical forces and / or thermally induced stress effects are concentrated in their influence on vertically emitting semiconductor laser devices, arrays and / or chips by the orientation of preferred directions, so that the polarization directions of the mesas or mesas are affected in the same way and to a very similar extent. In particular, the emitted light thus has a more uniform polarization. It is observed that mechanical stresses only change the birefringence, i.e. the wavelength separation between the two polarization modes, resulting in different spectral amplifications. Advantageously, the polarization modes are far away from each other, thereby minimizing the non-dominant modes by making the threshold gain more difficult. .

[0051] Furthermore, advantageously, lifetime is extended because any stress-induced material damage (eg, microcracks) forms almost entirely in a specific orientation rather than propagating randomly.

[0052] Particularly advantageously, providing an elliptical table and thus an elliptical optical aperture results in a more uniform polarization, since by the elliptical geometry a pattern of the desired polarization direction is preferentially formed. Furthermore, the elliptical table changes the environment of the laser, thereby changing the stress in the crystal, which affects the birefringence, thereby making the polarization more uniform by stress-induced orientation.

[0053] It has also been found that in particular the arrangement of multiple mesas in an array affects the performance through different effects, in particular when the etched regions have different widths in different directions, such as in closely adjacent mesas.

[0054] Advantageously, the parallel arrangement of all effects ensures that certain effects are enhanced. For example, the threshold current minimum for the desired polarization is more defined and more pronounced, which is further improved by better controllability.

[0055] Further characteristics and advantages will be derived from the following description of embodiments and the accompanying drawings.It should be understood that the features mentioned above and to be explained below can be used not only in the respectively specified combination but also in other combinations or alone. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] Figure 1 A vertically emitting semiconductor laser device having a contact opening oriented in a preferred direction is shown;

[0057] Figure 2 A vertically emitting semiconductor laser device having a surface grating oriented in a preferred direction is shown;

[0058] Figure 3 A vertically emitting semiconductor laser device having a contact opening oriented perpendicularly to a preferred direction is shown;

[0059] Figure 4 A vertical emitting semiconductor laser device having via connection terminals of different sizes is shown;

[0060] Figure 5 A vertical emitting semiconductor laser device having via connection terminals of different sizes is shown;

[0061] Figure 6 A vertically emitting semiconductor laser device having an elliptical terrace and an elliptical groove is shown;

[0062] Figure 7 An array having two rows of vertically emitting semiconductor laser devices is shown;

[0063] Figure 8 An array having a plurality of individually addressable array sub-regions is shown;

[0064] Fig. 9 An array with crossed conductor tracks is shown;

[0065] Fig.10 Show Fig. 9 The middle array is along the light emission direction in the top view;

[0066] Fig.11 A chip having a vertically emitting semiconductor laser device is shown;

[0067] Fig.12 Show Fig.10 Top view of the chip. DETAILED DESCRIPTION

[0068] The same reference numerals used in the figures denote the same or at least equivalent elements. The terms "upper", "lower", "left" and "right" and direction-related terms derived therefrom (e.g. "upper side") refer to the writing direction / reading direction in relation to the drawing, which is printed on the drawing plane below the drawing. The horizontal direction is parallel to the writing direction of the "drawing" and the vertical direction is perpendicular to the writing direction of the "drawing". The writing direction is horizontally clockwise. Writing, that is, writing primarily from left to right, such as Latin, English, and German.

[0069] Figure 1 A vertically emitting semiconductor laser device 1 is shown having a mesa 2, a connection 3 (formed as a p-type connection 3) and a connection opening 4. The connection opening 4 is oriented along a preferred direction 5 such that the length of the connection opening 4 extending vertically from top to bottom is parallel to the preferred direction 5. Figure 1 The surface grating 6 not shown in FIG. Figure 2 ) is arranged above the mesa 2 in the light emission direction 7. Preferably, the direction 5 is perpendicular to the light emission direction 7. The vertically emitting semiconductor laser device 1 further comprises a trench 8 which surrounds the mesa 2 and the connection portion 3. Preferably, the direction 5 is parallel to the optical axis of the semiconductor material of the vertically emitting semiconductor laser device 1.

[0070] Figure 2 A vertically emitting semiconductor laser device 1 is shown having a surface grating 6 oriented in a preferred direction 5, which is arranged in the region of the mesa 2 and polarizes light emitted from the mesa 2. The vertically emitting semiconductor laser device 1 further comprises a further connection opening 4', which is arranged below the connection opening 4 in the preferred direction 5, wherein the length of the further connection opening 4' extending vertically from top to bottom is parallel to the preferred direction 5. The connection openings 4, 4' have the same structure and are geometrically overlapped by rotation and translation.

[0071] Figure 3 A vertically emitting semiconductor laser component 1 is shown, in which a connection 3 is divided into two connection terminals 9, 9' by a connection opening 4, 4'. The connection opening 4, 4' is oriented perpendicularly to the preferred direction 5. The connection terminals 9, 9' are oriented along the preferred direction 5, and their extension direction from the lower left to the upper right is parallel to the preferred direction 5. The groove 8 is not circular in a top view, but is adapted to the geometry of the connection terminals 9, 9'.

[0072] Figure 4 A vertically emitting semiconductor laser device 1 is shown having four feedthrough openings 4, which are not individually labeled for the sake of clarity. The feedthrough openings 4 opposite to each other on the left and right are oriented perpendicularly to the preferred direction 5, while the feedthrough connections 9, 9', 9", 9'" are at an angle of 45 degrees to the preferred direction 5, wherein the angle is less than 180 degrees as a reference. The opposite feedthrough connections 9 and 9" are of the same size. The opposite feedthrough connections 9' and 9'" are of the same size. Adjacent feedthrough connections 9 and 9' or 9 and 9'" are of different sizes.

[0073] Figure 5 A vertically emitting semiconductor laser component 1 is shown having four contact openings 4, 4', which are not individually labeled for the sake of clarity. Figure 5 In the example, the vertical connection openings 4 and 4' are oriented along the preferred direction 5, while the horizontal connection openings 4 are perpendicular to the preferred direction 5. The connection terminals 9, 9', 9", 9"' are configured as p-type through holes, wherein the opposite p-type through holes 9, 9" and 9', 9"' are of the same size, and the adjacent p-type through holes 9, 9' and 9", 9"' are of different sizes. The p-type through holes 9, 9', 9", 9"' form an angle of 45 degrees with the preferred direction 5.

[0074] Figure 6 A vertically emitting semiconductor laser device 1 is shown with an elliptical table 2 and an elliptical groove 8. The geometry of the table 2 is substantially consistent with the shape of the groove 8. The ellipse is substantially eye-shaped. The ellipse tapers left and right in the horizontal direction, perpendicular to the preferred direction 5. The through-portion openings 4, 4' are oriented along the preferred direction 5.

[0075] Figure 7An array 10 is shown with a plurality of vertically emitting semiconductor laser devices 1, which are arranged in two rows in a hexagonal shape. Each vertically emitting semiconductor laser device 1 has a surface grating 6. The array 10 has wire bonding connections 11 on the upper side for electrical connection to an external power supply. The array 10 is at least partially covered with a protective layer. The outermost layer in the light emission direction 7 is formed by an unetched Cap layer 12.

[0076] Figure 8 An array 10 with a plurality of individually addressable array sub-regions is shown. Two adjacent array sub-regions have a polarization rotated by 90 degrees, wherein the vertically emitting semiconductor laser devices 1 of a single array sub-region have a uniform polarization. The surface gratings 6 of two adjacent array sub-regions are thus arranged orthogonally. The dominant polarization direction is thus rotated by 90 degrees. The wire bonding connections 11 of the array sub-regions are arranged alternately on the upper side and on the lower side. The array 10 further comprises a chip code marking 13 for identifying the array 10. The array 10 further comprises a marking symbol 14, in particular machine-readable, for positioning and identifying the array 10.

[0077] The vertical emitting semiconductor laser device 1 is manufactured by epitaxial layer growth. The epitaxial growth ends with anti-resonance. A surface grating 6 is locally formed in an annular shape and etched into the epitaxial termination layer to provide a polarization direction.

[0078] In the subsequent process step of stripping the connection 3, which is carried out in a clean room, the paint layer covered with metal is removed with a solvent, thereby stripping the metal layer at the same time. If the connection 3 is constructed as a closed ring in this case, the solvent may not be able to enter the interior of the ring. Here, the light outlet (also called facet) remains closed and covered by the paint layer and the metal layer. The open ring connection 3 thus improves the processability by simplifying the stripping of the paint layer and the metal layer on the facet. The entire surface grating 6 is then covered with a thin dielectric coating.

[0079] Fig. 9 An array 10 is shown having crossed conductor tracks 15 , 15 ′ which are arranged one above the other at an angle of 90 degrees in a mesh-like structure. The conductor tracks 15 , 15 ′ cross in a crossing region 16 which electrically and thermally isolates the crossed conductor tracks 15 , 15 ′.

[0080] Fig.10 Show Fig. 9 1 . Each vertically emitting semiconductor laser component 1 has two opposite contact connections 9 , 9 ′ which are connected to two opposite contact connections 9 ″ of an adjacent laser component 1 via conductor tracks 15 .

[0081] Fig.11A chip 17 is shown having a length 18, which is oriented in a longitudinal direction perpendicular to the light emission direction 7. The chip 17 also has a width 19 in a width direction oriented perpendicular to the light emission direction 7. The width 19 is smaller than the length 18. The chip 17 has a height 20 in a height direction, which corresponds to the light emission direction 7. The chip 17 has a vertically emitting semiconductor laser device 1.

[0082] Fig.12 Show Fig.11 A top view of the middle chip 17. The width 19 extends in the width direction, parallel to the preferred direction 5.

[0083] The features described or shown in the foregoing description, the claims, the examples and the drawings can be used alone or in any combination to implement various embodiments of the invention.

[0084] Reference numerals 1Vertical emitting semiconductor laser device 1 2 countertops 2

[0085] 3Connection part 3

[0086] 4 Connection opening 4

[0087] 4' Other connection openings 4'

[0088] 5 Preferred Direction 5

[0089] 6 Surface grating 6

[0090] 7 Light emission direction 7

[0091] 8 Groove 8

[0092] 9 connection part connection terminal 9

[0093] 9' connection part connection end 9'

[0094] 9" connection port 9"

[0095] 9"'Connection terminal 9"'

[0096] 10 Array 10

[0097] 11Wire bonding connection 11

[0098] 12Cap layer 12

[0099] 13 chip code mark 13

[0100] 14 Marking symbol 14

[0101] 15 Printed conductor 15

[0102] 15' printed conductor 15'

[0103] 16 Crossover area 16

[0104] 17 Chip 17

[0105] 18 Length 18

[0106] 19Width19

[0107] 20Height 20

Claims

1. A vertical emitting semiconductor laser device (1) having: Semiconductor material having an optical axis; A table (2) for emitting light in a light emission direction (7); A connection portion (3) for electrically connecting the tabletop (2), the connection portion having a connection portion opening (4); in, The connection portion opening (4) is arranged along a preferred direction (5); It is characterized in that The optical axis is arranged along a preferred direction (5).

2. A vertically emitting semiconductor laser device (1) having: A table (2) for emitting light in a light emission direction (7); A connection portion (3) for electrically connecting the table top, the connection portion having a connection portion opening (4); a surface grating (6) for polarizing light, the surface grating preferably being arranged above the table (2) in the light emission direction (7); in, The connection portion opening (4) is arranged along a preferred direction (5); It is characterized in that The surface grating (6) is arranged perpendicular to the preferred direction or parallel to the preferred direction (5).

3. A vertical emitting semiconductor laser device (1) having: A table (2) for emitting light in a light emission direction (7); A connection portion (3) for electrically connecting the table top (2), the connection portion having a connection portion opening (4); in, The connection portion opening (4) is arranged along a preferred direction (5); It is characterized in that The mesa (2) has an elliptical shape in a plan view along the light emission direction (7), which tapers in at least one region perpendicularly to the preferred direction or parallel to the preferred direction (5).

4. The vertically emitting semiconductor laser device (1) according to any of the preceding claims, comprising further through-openings (4'), which are arranged along the preferred direction (5).

5. A vertically emitting semiconductor laser device (1) according to any one of the preceding claims; wherein The connection portion (3) comprises a plurality of connection portion connection ends (9, 9', 9", 9'"); At least two of the plurality of connection ends (9, 9', 9", 9'") have different sizes, and one of the connection ends (9) with different sizes is arranged along the preferred direction (5) or perpendicular to the preferred direction or at an angle of 45 degrees to the preferred direction (5).

6. A vertically emitting semiconductor laser device (1) according to the preceding claim, wherein The two opposite contact-through connections (9, 9', 9", 9'") are substantially of the same size.

7. A vertically emitting semiconductor laser device (1) according to any one of the preceding claims; comprising a trench (8) at least partially surrounding the mesa (2); in, The groove (8) has an elliptical shape in a plan view along the light emission direction (7), which tapers in at least one region perpendicular to the preferred direction or along the preferred direction (5).

8. A vertically emitting semiconductor laser device (1) according to any one of the preceding claims, wherein The curve direction of the connection portion (3) is consistent with the curve direction of the table top (2).

9. An array (10) comprising a plurality of vertically emitting semiconductor laser devices (1), at least one vertically emitting semiconductor laser device (1), preferably all vertically emitting semiconductor laser devices (1) of the plurality of vertically emitting semiconductor laser devices being constructed according to any of the preceding claims.

10. An array (10) according to the preceding claim, wherein: The vertically emitting semiconductor laser devices (1) are arranged substantially in an equilateral triangle along the light emitting direction (7) in a plan view.

11. An array (10) according to any one of the preceding claims, wherein The vertically emitting semiconductor laser devices (1) are arranged in a hexagonal shape along the light emitting direction (7) in a plan view.

12. An array (10) according to claim 9 or 10, wherein: The vertically emitting semiconductor laser devices (1) are arranged in a rectangular shape along the light emitting direction (7) in a plan view.

13. An array (10) according to any one of the preceding claims concerning an array, comprising at least four vertically emitting semiconductor laser devices (1), wherein: The at least four vertically emitting semiconductor laser components (1), preferably all vertically emitting semiconductor laser components (1), have two contact-through connections (9, 9'). wherein two opposite contact-through connection ends (9, 9', 9", 9'") are connected to each other via printed conductors (15, 10'); and The crossing conductor tracks (15, 15') are spaced apart from one another at least in the crossing region (16) in the light emission direction (7) and are arranged one above the other in an alternating pattern.

14. An array (10) according to any one of the preceding claims, comprising a plurality of individually addressable array sub-regions, each of which has at least one vertically emitting semiconductor laser device (1), in, The array sub-areas have different polarizations, in particular polarizations rotated by 90 degrees, Preferably, the vertically emitting semiconductor laser devices (1) in a single array sub-region have uniform polarization.

15. A chip (17) comprising a vertical emitting semiconductor laser device (1) according to any of the preceding claims with respect to a vertical emitting semiconductor laser device (1) or an array (10) according to any of the preceding claims with respect to an array (10), the chip (17) having a height along a light emission direction (7) and a width and a length perpendicular to the light emission direction (7); in, The length is greater than the width, and Therein, the length and / or the width are arranged along a preferred direction (5).

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