Magnetic screening module and super-atom beam source screening device

Abstract

The invention discloses a magnetic screening module and a super-atom beam source screening device, and relates to the technical field of semiconductor material surface treatment. The magnetic screening module comprises an even number of magnets, the even number of magnets are evenly distributed in the circumferential direction to form an annular magnetic array, in the annular magnetic array, every two opposite magnets form magnetic pairs with the same magnetizing direction, the included angle of the magnetizing directions of the adjacent magnetic pairs is 360 degrees / n, and n is the number of the magnetic pairs and is larger than or equal to 2; an area with the lowest synthesized magnetic field intensity is formed in the center of the annular magnetic array, and the magnetic field intensity of the area with the lowest synthesized magnetic field intensity is 0.4 T-0. 6T. According to the magnetic screening module, it can be guaranteed that monatomic ions smoothly deflect in the magnetic screening module, and successful screening of most monatomic ions is achieved; and the motion trails of most of the super-atomic ions can be ensured, so that the most of the super-atomic ions can bombard the surface of the material after being ejected from the magnetic screening module, and the utilization rate of the super-atomic ions in the super-atomic beam source is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor material surface treatment, and in particular to a magnetic screening module and a super-atom beam source screening device. Background Art

[0002] With the development of ultra-large-scale integrated circuits, semiconductor surface processing technology has become increasingly sophisticated, especially in the wafer surface polishing and etching process, which has very high precision requirements. In conventional plasma processing, gas molecules are ionized to form monatomic ions that bombard the wafer surface, which will have a significant injection effect on the wafer surface lattice, affecting the surface smoothness and lattice quality; compared with monatomic ions, the particle mass and collision cross section of superatomic ions have increased by several to thousands of times. When superatomic ions collide with the material surface, lateral sputtering effects and local thermal annealing effects will occur, which can effectively improve the surface smoothness and surface lattice quality. This characteristic has achieved good process effects during wafer surface processing.

[0003] When a superatomic beam source is formed, the thermal motion of gas molecules decreases sharply after adiabatic expansion. In the process of combining the colliding gas molecules to form superatomic ions by intermolecular van der Waals forces, not all gas molecules can combine to form superatomic ions. Those uncombined gas molecules exist alone. These independently existing gas molecules are ionized to form similar monatomic ions. When they subsequently bombard the wafer surface, they will have a significant injection effect on the wafer surface lattice, affecting the surface smoothness and lattice quality. In order to improve the process effect of wafer surface treatment, it is necessary to screen out the monatomic ions in the superatomic beam source and increase the proportion of superatomic ions in the superatomic beam source.

[0004] The existing super-atom beam source screening device adopts a magnetic screening module, but the magnetic field strength generated by the magnetic screening module is not ideal, resulting in poor screening effect. Summary of the invention

[0005] The purpose of the present invention is to provide a magnetic screening module and a super-atom beam source screening device, so as to further optimize the magnetic field strength of the magnetic screening module and improve the screening effect of the super-atom beam source screening device.

[0006] To achieve this object, the present invention adopts the following technical solutions:

[0007] A magnetic screening module comprises an even number of magnets, wherein the even number of magnets are evenly arranged in the circumferential direction to form an annular magnetic array, wherein every two opposing magnets in the annular magnetic array form a magnetic pair with the same magnetization direction, and the angle between the magnetization directions of adjacent magnetic pairs is 360° / n, wherein n is the number of magnetic pairs, and n≥2; so as to form a region with the lowest synthetic magnetic field strength at the center of the annular magnetic array, and the magnetic field strength of the region with the lowest synthetic magnetic field strength is 0.4T to 0.6T.

[0008] As an optional solution for the magnetic screening module, the number of the magnets is 12, and the angle between the magnetization directions of two adjacent magnets is 60°.

[0009] As an optional solution of the magnetic screening module, the magnet is an isosceles trapezoidal structure, and the upper bottom edge of the magnet of the isosceles trapezoidal structure is located on the inner side of the annular magnetic array.

[0010] As an optional solution for the magnetic screening module, the length of the upper base of the isosceles trapezoidal magnet is 3 mm to 30 mm.

[0011] As an optional solution of the magnetic screening module, the annular magnetic array includes a magnetic pair whose magnetization direction is parallel to the upper bottom edge of the magnet, and the magnetic pair whose magnetization direction is parallel to the upper bottom edge of the magnet is arranged in the vertical direction.

[0012] As an optional solution of the magnetic screening module, the length of the annular magnetic array is 20 mm to 160 mm.

[0013] As an optional solution of the magnetic screening module, the magnetic screening module further includes a magnetic conductive cylinder, which is arranged in the annular magnetic array, and a magnetic screening channel is formed inside the magnetic conductive cylinder.

[0014] A superatomic beam source screening device comprises a baffle and a magnetic screening module as described in any of the above schemes, wherein the baffle is arranged on one side of the output end of the magnetic screening module to block the monatomic ions in the superatomic beam source; a through hole is arranged at the center of the baffle, and the diameter of the through hole is larger than the diameter of the superatomic beam source.

[0015] As an optional solution of the super-atom beam source screening device, the diameter of the perforation is 5 mm to 30 mm.

[0016] As an optional solution of the super-atom beam source screening device, the distance between the baffle and the exit end of the magnetic screening module is 20 mm to 300 mm, and the diameter of the baffle is 100 mm to 300 mm.

[0017] Beneficial effects of the present invention:

[0018] The magnetic screening module provided by the present invention is an annular magnetic array formed by an even number of magnets uniformly arranged along the circumferential direction. By forming magnetic pairs with the same magnetization direction between every two opposing magnets, the included angle between the magnetization directions of adjacent magnetic pairs is 360° / n, wherein n is the number of magnetic pairs and n≥2; so as to form a region with the lowest synthetic magnetic field intensity at the center of the annular magnetic array. Since the mass of superatomic ions is hundreds to thousands times that of monatomic ions, the deflection radius of superatomic ions and monatomic ions with the same kinetic energy will differ by tens to hundreds of times. When the superatomic beam source passes through the central axis of the annular magnetic array, the deflection radius of the superatomic ions with larger mass is very large, and they will not be deflected in the magnetic field generated by the annular magnetic array, and can smoothly pass through the magnetic screening module, while the monatomic ions with smaller mass will be deflected in the magnetic field generated by the annular magnetic array, thereby achieving the screening of monatomic ions. Setting the magnetic field strength in the lowest area of ​​synthetic magnetic field strength to 0.4T~0.6T can ensure that the monatomic ions are smoothly deflected in the magnetic screening module, thereby achieving the successful screening of most monatomic ions; and can ensure the movement trajectory of most superatomic ions, so that most superatomic ions can bombard the surface of semiconductor materials after being ejected from the magnetic screening module, thereby improving the utilization rate of superatomic ions.

[0019] The superatomic beam source screening device provided by the present invention can not only improve the utilization rate of superatomic ions in the superatomic beam source by arranging a baffle on one side of the output end of the magnetic screening module, so that most of the superatomic ions in the superatomic beam source can pass through the perforations of the baffle to bombard the surface of the semiconductor material; but also can block the collision of most of the monatomic ions with the surface of the semiconductor material, thereby improving the process effect of the surface treatment of the semiconductor material. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 is a schematic diagram of the arrangement of an annular magnetic array in a magnetic screening module provided by an embodiment of the present invention;

[0021] Figure 2 It is a schematic diagram of the simulated distribution of the magnetic field intensity of the magnetic field generated by the annular magnetic array in the magnetic screening module provided by an embodiment of the present invention;

[0022] Figure 3 is a cross-sectional schematic diagram of an annular magnetic array in a magnetic screening module provided by an embodiment of the present invention;

[0023] Figure 4 is a schematic diagram of a state where a magnet provided by an embodiment of the present invention is installed on a ring-shaped base;

[0024] Figure 5 is a cross-sectional schematic diagram of a super-atom beam source screening device provided by an embodiment of the present invention;

[0025] Figure 6It is a schematic diagram of the movement trajectories of monatomic ions and superatomic ions after the superatomic beam source provided by an embodiment of the present invention passes through a superatomic beam source screening device.

[0026] In the figure:

[0027] 100. Superatom beam source; 101. Monatomic ions; 102. Superatom ions;

[0028] 200, baffle; 201, perforation;

[0029] 300. Magnetic screening module;

[0030] 1. Ring magnetic array; 11. Magnet;

[0031] 2. Support assembly; 21. Ring base; 211. Mounting position; 22. Reinforcement sleeve;

[0032] 3. Magnetic tube; 31. Flange;

[0033] 4. Insulating end caps. DETAILED DESCRIPTION

[0034] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and should not be construed as limiting the present invention.

[0035] In the description of the present invention, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance. Among them, the terms "first position" and "second position" are two different positions.

[0036] Unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0037] Unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include the first feature being in direct contact with the second feature, or may include the first feature being in contact with the second feature through another feature between them instead of being in direct contact. Moreover, a first feature being "above", "above" and "above" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes the first feature being directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0038] The technical solution of the present invention is further described below with reference to the accompanying drawings and through specific implementation methods.

[0039] like Figure 1 and Figure 2 As shown, this embodiment provides a magnetic screening module, including an even number of magnets 11, which are evenly arranged in the circumferential direction to form an annular magnetic array 1. In the annular magnetic array 1, every two opposing magnets 11 form a magnetic pair with the same magnetization direction, and the angle between the magnetization directions of adjacent magnetic pairs is 360° / n, wherein n is the number of magnetic pairs, and n≥2, so as to form a region with the lowest synthetic magnetic field strength at the center of the annular magnetic array 1, and the magnetic field strength of the region with the lowest synthetic magnetic field strength is 0.4T~0.6T.

[0040] The working principle of the magnetic screening module 300 provided in this embodiment is as follows: assuming that the mass of the ion is m, the charge is the elementary charge e, the kinetic energy is E, and the uniform magnetic field is B, the ion moves in a circle in the magnetic field, and the movement radius is: , since the mass of the superatomic ion 102 is several hundred to several thousand times that of the monatomic ion 101, for the superatomic ion 102 and the monatomic ion 101 with the same kinetic energy, the deflection radius will differ by tens to hundreds of times. When the superatomic beam source 100 passes through the central axis of the annular magnetic array 1, the superatomic ion 102 with a larger mass has a large deflection radius and will not be deflected in the magnetic field generated by the annular magnetic array 1, and can smoothly pass through the magnetic screening module 300, while the monatomic ion 101 with a smaller mass will be deflected in the magnetic field generated by the annular magnetic array 1, thereby achieving the screening of the monatomic ion 101. Setting the magnetic field strength in the lowest synthetic magnetic field strength area to 0.4T to 0.6T can ensure that the monatomic ion 101 is smoothly deflected in the magnetic screening module 300, and most of the monatomic ions 101 are successfully screened out; and it can also ensure the motion trajectory of most of the superatomic ions 102, so that most of the superatomic ions 102 can bombard the surface of the semiconductor material after being ejected from the magnetic screening module 300, thereby improving the utilization rate of the superatomic ions 102.

[0041] In one embodiment, the number of magnets 11 is 12, and the angle between the magnetization directions of two adjacent magnets 11 is 60°. By setting 12 magnets 11 to be evenly arranged in a circular array, the magnetization directions of adjacent magnets 11 form an angle of 60°, thereby achieving symmetry of magnetic field distribution and harmonic optimization. The circular array structure makes the spatial distribution of the magnetic field more uniform and reduces local magnetic field distortion; the periodic change of 60° between adjacent magnetization directions can effectively suppress magnetic field harmonics of a specific order, thereby reducing torque fluctuations and energy loss, and improving the stability of the magnetic screening module 300.

[0042] Of course, in other embodiments, the number of magnets 11 may also be 4, 6 or other even numbers.

[0043] In one embodiment, the magnet 11 is an isosceles trapezoidal structure, and the upper base of the isosceles trapezoidal magnet 11 is located on the inner side of the annular magnetic array 1. The magnet 11 is set to an isosceles trapezoidal structure, and the upper and lower bases of the magnet 11 are both planes, so that the formed annular magnetic array 1 is easier to install. The upper base of the isosceles trapezoidal magnet 11 is set toward the inner side of the annular magnetic array 1, and the fit between the trapezoidal slope and the annular contour is utilized to reduce the air gap between the magnets 11, forming a tight annular magnetic chain, reducing magnetic resistance and reducing leakage magnetic flux, so that a high-density and uniformly distributed magnetic field is formed inside the annular magnetic array 1; at the same time, the stability of the assembly of the annular magnetic array 1 is ensured to avoid the displacement of the magnet 11 caused by centrifugal force or vibration.

[0044] In other embodiments, the magnet 11 may also be a semi-annular magnet.

[0045] In one embodiment, the magnetic screening module 300 further includes a magnetic conductive cylinder 3, which is disposed in the annular magnetic array 1, and a magnetic screening channel is formed inside the magnetic conductive cylinder 3. By providing the magnetic conductive cylinder 3, the magnetic field generated by the annular magnetic array 1 can be transmitted to the magnetic conductive cylinder 3, so that a magnetic screening channel is formed in the magnetic conductive cylinder 3. When the superatomic beam source 100 passes through the central axis of the magnetic conductive cylinder 3, if the monatomic ions 101 deflected in the magnetic screening channel fall into the magnetic screening channel, they will not fall directly on the annular magnetic array 1, but fall on the inner wall of the magnetic conductive cylinder 3, so as to avoid falling directly on the annular magnetic array 1, resulting in a large temperature rise of the annular magnetic array 1, which has a great impact on the magnetic field strength.

[0046] Specifically, the magnetic tube 3 is made of metal material and is resistant to corrosion; a stainless steel tube is preferred.

[0047] In one embodiment, the length of the upper base of the isosceles trapezoidal magnet 11 is 3 mm to 30 mm. The inner ring circumference of the annular magnetic array 1 is determined by the length of the upper base of the isosceles trapezoidal magnet 11 and the number of magnets 11, that is, the circumference is equal to the sum of the lengths of the upper bases of all magnets 11, and then the inner ring diameter of the annular magnetic array 1 can be calculated. Through the length of the upper base, the diameter of the magnetic screening channel can be accurately controlled (the inner ring diameter minus twice the wall thickness of the magnetic tube 3), thereby achieving the control of the range of the magnetic field strength in the area with the lowest synthetic magnetic field strength.

[0048] If the length of the upper bottom side of the magnet 11 is too large, the diameter of the magnetic screening channel will be too large. The larger the diameter of the magnetic screening channel, the smaller the magnetic field strength in the area with the lowest synthetic magnetic field strength, and the larger the deflection radius. This may result in the monatomic ions 101 being unable to be screened out before the superatomic beam source 100 reaches the surface of the semiconductor material; or it may be able to be screened out, but it will affect the overall length of the superatomic beam source screening device.

[0049] If the length of the upper bottom side of the magnet 11 is too small, the diameter of the magnetic screening channel will be too small. The smaller the diameter of the magnetic screening channel, the greater the magnetic field strength in the area with the lowest synthetic magnetic field strength, and the smaller the deflection radius, a large number of monatomic ions 101 may be deflected and fall on the inner wall of the magnetic cylinder 3, causing the temperature of the magnetic screening module 300 to rise sharply, affecting the magnetic field stability. In addition, some superatomic ions 102 with relatively small mass may be deflected and unable to reach the surface of the semiconductor material, resulting in a waste of superatomic ions 102 and reducing the utilization rate of superatomic ions 102.

[0050] In one embodiment, continue to refer to Figure 1 As shown, the annular magnetic array 1 includes a magnetic pair whose magnetization direction is parallel to the upper bottom edge of the magnet 11, and the magnetic pair whose magnetization direction is parallel to the upper bottom edge of the magnet 11 is arranged in the vertical direction. The magnetic moment vector inside the annular magnetic array 1 is distributed six times symmetrically in the annular plane. Through the principle of vector superposition, the synthetic magnetic field at the center of the annular magnetic array 1 is significantly weakened due to the symmetric cancellation effect, forming an area with the lowest synthetic magnetic field intensity. The magnetization direction of the magnet 11 arranged in the vertical direction in the magnetic screening channel is horizontal, so that the magnetic field intensity in the vertical direction in the magnetic screening channel is enhanced along the radial gradient distribution. The super-atom beam source 100 is injected into the area with the lowest synthetic magnetic field intensity at the incident end of the magnetic screening module 300, and then gradually deflected. Due to the gradual increase in the magnetic field intensity in the vertical direction, the deflection radius of most of the monoatomic ions 101 under the action of the magnetic field intensity and their own gravity is getting smaller and smaller, which not only effectively suppresses the spatial dispersion of the super-atom beam source 100, but also realizes the screening of monoatomic ions 101 in a shorter length space through the coupling optimization of the magnetic field gradient and the motion trajectory.

[0051] In one embodiment, the length of the annular magnetic array 1 is 20 mm to 160 mm. By controlling the length of the annular magnetic array 1, and thus controlling the length of the magnetic screening channel, it is prevented that a large number of monatomic ions 101 are deflected and then projected onto the channel sidewall of the magnetic screening channel, causing a sharp increase in temperature, affecting the magnetic field strength, and thus affecting the reliability of the magnetic screening module 300.

[0052] In this embodiment, the length L1 of the magnetic conductive cylinder 3 is 20 mm to 200 mm, and the inner diameter of the magnetic conductive cylinder 3 is 10 mm to 80 mm.

[0053] In one embodiment, if Figure 3-Figure 5 As shown, the magnetic screening module 300 also includes a support assembly 2, and the annular magnetic array 1 is fixedly connected to the support assembly 2. The annular magnetic array 1 is fixed by the support assembly 2 to prevent the position and magnetization direction of the magnets 11 in the annular magnetic array 1 from changing, thereby affecting the magnetic field strength.

[0054] In one embodiment, the support assembly 2 includes an annular base 21, the inner wall of the annular base 21 is evenly provided with mounting positions 211, and the magnets 11 are fixed to the mounting positions 211. An even number of magnets 11 are arranged one by one on the even number of mounting positions 211 to form an annular magnetic array 1.

[0055] Specifically, for the magnet 11 with an isosceles trapezoidal structure, the inner wall of the annular base 21 is evenly circumferentially provided with mounting surfaces that are compatible with the lower bottom surface of the magnet 11 with an isosceles trapezoidal structure. The lower bottom surface of the isosceles trapezoidal magnet 11 is bonded to the mounting surface by glue such as two-component epoxy resin or acrylic adhesive to fix the magnet 11.

[0056] Of course, in other embodiments, a snap-in slot or an inserting slot or other structures may be provided on the mounting position 211 so that the magnet 11 can be snap-fitted into the snap-in slot or inserted into the inserting slot.

[0057] In one embodiment, the support assembly 2 further includes a reinforcement sleeve 22, the annular base 21 and the reinforcement sleeve 22 are coaxially arranged, and the annular magnetic array 1 is fixed in the annular space between the annular base 21 and the reinforcement sleeve 22. After an even number of magnets 11 are mounted one by one on the annular base 21, the reinforcement sleeve 22 is inserted into the inner cavity of the annular magnetic array 1, and the outer wall of the reinforcement sleeve 22 is interference-fitted with the inner cavity of the annular magnetic array 1 to prevent the position of the magnets 11 from changing due to loose bonding, thereby affecting the magnetic field strength.

[0058] Specifically, the reinforcement sleeve 22 is a cylindrical support sleeve, which is a metal piece and does not affect the magnetic field strength and magnetic transfer of the annular magnetic array 1 .

[0059] In this embodiment, the magnetic conductive cylinder 3 is coaxially sleeved in the reinforcement sleeve 22 .

[0060] In one embodiment, the magnetic screening module 300 further includes two insulating end covers 4 , which are symmetrically arranged at two axial ends of the annular magnetic array 1 , and the two insulating end covers 4 play a role in axially limiting and fixing the annular magnetic array 1 .

[0061] A radial gap is provided between the magnetic cylinder 3 and the reinforcement sleeve 22, and the insulating end cap 4 can isolate the reinforcement sleeve 22 and the magnetic cylinder 3. Since the superatomic ions 102 have a high mass, the probability of generating electrons after colliding with the magnetic cylinder 3 is very high. By testing the charge of the magnetic cylinder 3, the screening effect of the magnetic screening module 300 can be detected. In order to prevent the cylindrical support sleeve made of metal from contacting and conducting electricity to affect the charge of the magnetic cylinder 3, and then affect the accuracy of the charge test of the magnetic cylinder 3, the radial gap is set between the magnetic cylinder 3 and the reinforcement sleeve 22 for radial conductive isolation. In order not to affect the axial support of the reinforcement sleeve 22, the end cap that plays an axial limiting and fixing role on the reinforcement sleeve 22 is set as an insulating end cap 4, so as to achieve axial conductive isolation between the magnetic cylinder 3 and the reinforcement sleeve 22.

[0062] Furthermore, fixing flanges 31 are provided at both ends of the magnetic tube 3, and a snap-in groove is provided on the side where the fixing flanges 31 are close to each other. The central hole of the insulating end cover 4 is set as a trapezoidal hole, and the fixing flange 31 is arranged in the larger hole of the trapezoidal hole. The smaller hole of the trapezoidal hole is interference fit with the bottom of the snap-in groove to realize the support and fixation of the magnetic tube 3.

[0063] like Figure 6 As shown, this embodiment also provides a super-atomic beam source screening device, including a baffle 200 and the above-mentioned magnetic screening module 300. The baffle 200 is arranged on one side of the exit end of the magnetic screening module 300, and is used to block the monatomic ions 101 screened out from the superatomic beam source 100. A through hole 201 is arranged at the center of the baffle 200, and the diameter of the through hole 201 is larger than the diameter of the superatomic beam source 100. The superatomic beam source 100 enters the magnetic screening channel from the incident end of the magnetic screening module 300. During the movement along the central axis of the magnetic screening channel, the monatomic ions 101 are gradually deflected, and the superatomic ions 102 continue to move along the central axis of the magnetic screening channel, and are ejected from the exit end of the magnetic screening module 300, passing through the through hole 201 of the baffle 200 to bombard the surface of the semiconductor material arranged on the side of the baffle 200 away from the magnetic screening module 300. The monatomic ions 101 will be deflected in the magnetic screening channel. The baffle 200 can block the monatomic ions 101 with larger mass from being deflected in the magnetic screening channel. However, due to the large deflection radius, they will still collide with the surface of the semiconductor material after being ejected from the magnetic screening module 300, affecting the process effect of the surface treatment of the semiconductor material.

[0064] In one embodiment, the diameter of the through hole 201 is 5 mm to 30 mm. In this embodiment, the diameter of the superatomic beam source 100 is 3 mm to 20 mm. Considering that some superatomic ions 102 with relatively small mass are deflected at a small angle in the magnetic screening channel, in order to ensure that these superatomic ions 102 can still pass through the baffle 200 to bombard the surface of the semiconductor material, the diameter of the through hole 201 is set to be slightly larger than the diameter of the superatomic beam source 100, further improving the utilization rate of the superatomic ions 102.

[0065] In one embodiment, the distance between the baffle 200 and the exit end of the magnetic screening module 300 is 20 mm to 300 mm, and the diameter of the baffle 200 is 100 mm to 300 mm.

[0066] In this embodiment, the distance L2 between the baffle 200 and the output end of the magnetic screening module 300 is 180 mm, and the diameter of the baffle 200 is 200 mm. The energy of the incident superatom beam source 100 is E=60 keV, and the charge amount of the monatomic ion 101 is e=1.6×10 -19 C, the mass of the monatomic ion 101 is 6.64×10 -26 kg, when the length of the magnetic tube 3 is L1=160 mm and the magnetic field strength in the lowest area of ​​the synthetic magnetic field strength is 0.45 T, the movement radius of the monatomic ions 101 with a smaller mass in the magnetic screening module 300 is R=496 mm, and the offset of the output end is , the deflection angle of the emission end from the central axis , leaving the magnetic screening channel, the offset between the magnetic screening module 300 and the baffle 200 is S2 = L2 × sin α = 58.1 mm, and the total monoatomic ions 101 are offset by S1 + S2 = 84.6 mm relative to the central axis, which has been verified experimentally. Therefore, the diameter of the baffle 200 is set to 200 mm to block most of the monoatomic ions 101, so as to improve the process effect of the semiconductor material surface treatment.

[0067] The superatomic beam source screening device provided in this embodiment can not only improve the utilization rate of the superatomic ions 102 in the superatomic beam source 100 by setting a baffle 200 on one side of the output end of the magnetic screening module 300, so that most of the superatomic ions 102 in the superatomic beam source 100 can pass through the perforations 201 of the baffle 200 to bombard the surface of the semiconductor material; but also can block most of the monatomic ions 101 from colliding with the surface of the semiconductor material, thereby improving the process effect of the surface treatment of the semiconductor material.

[0068] The above contents are only preferred embodiments of the present invention. For ordinary technicians in this field, according to the concept of the present invention, there will be changes in the specific implementation methods and application scopes. The content of this specification should not be understood as limiting the present invention.

Claims

1. Magnetic screening module, characterized in that, The invention comprises an even number of magnets (11), wherein the even number of magnets (11) are evenly arranged in the circumferential direction to form an annular magnetic array (1), wherein in the annular magnetic array (1), every two opposing magnets (11) form a magnetic pair with the same magnetization direction, and the angle between the magnetization directions of adjacent magnetic pairs is 360° / n, wherein n is the number of magnetic pairs, and n≥2; so as to form a region with the lowest synthetic magnetic field strength at the center of the annular magnetic array (1), and the magnetic field strength of the region with the lowest synthetic magnetic field strength is 0.4T to 0.6T.

2. The magnetic screening module according to claim 1, characterized in that: The number of the magnets (11) is 12, and the angle between the magnetization directions of two adjacent magnets (11) is 60°.

3. The magnetic screening module according to claim 1, characterized in that: The magnet (11) is an isosceles trapezoidal structure, and the upper base of the magnet (11) of the isosceles trapezoidal structure is located on the inner side of the annular magnetic array (1).

4. The magnetic screening module according to claim 3, characterized in that: The length of the upper base of the magnet (11) with an isosceles trapezoidal structure is 3 mm to 30 mm.

5. The magnetic screening module according to claim 4, characterized in that: The annular magnetic array (1) comprises a magnetic pair whose magnetization direction is parallel to the upper bottom edge of the magnet (11); the magnetic pair whose magnetization direction is parallel to the upper bottom edge of the magnet (11) is arranged in a vertical direction.

6. The magnetic screening module according to claim 1, characterized in that: The length of the annular magnetic array (1) is 20 mm to 160 mm.

7. The magnetic screening module according to any one of claims 1 to 6, characterized in that: The magnetic screening module further comprises a magnetic conductive cylinder (3), wherein the magnetic conductive cylinder (3) is arranged in the annular magnetic array (1), and a magnetic screening channel is formed inside the magnetic conductive cylinder (3).

8. A super-atom beam source screening device, characterized in that: It comprises a baffle (200) and a magnetic screening module as described in any one of claims 1 to 7, wherein the baffle (200) is arranged at one side of the output end of the magnetic screening module and is used to block the monoatomic ions (101) in the superatomic beam source (100); a through hole (201) is arranged at the center of the baffle (200), and the diameter of the through hole (201) is larger than the diameter of the superatomic beam source (100).

9. The superatomic beam source screening device according to claim 8, characterized in that: The diameter of the perforation (201) is 5 mm to 30 mm.

10. The superatomic beam source screening device according to claim 8, characterized in that: The distance between the baffle (200) and the exit end of the magnetic screening module is 20 mm to 300 mm, and the diameter of the baffle (200) is 100 mm to 300 mm.

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