Semiconductor manufacturing apparatus and semiconductor device

Abstract

The invention relates to a semiconductor manufacturing apparatus and a semiconductor apparatus. The purpose of the present invention is to provide a technique capable of reducing the load received by a cutting member when manufacturing a semiconductor device in which a wire having higher hardness than an aluminum wire is used as wiring. A semiconductor manufacturing apparatus (100) is provided with: a wire feeder (1) for supplying a wire (29); a tool (3) that bonds the wire (29) supplied from the wire feeder (1) to the plurality of bonded portions of the semiconductor devices (20, 40); a first blade (5) that cuts the remaining portion of the wire (29) except the portion between the plurality of joined portions by half thickness; and a second blade (6) which has a blade tip having an acute angle smaller than that of the blade tip of the first blade (5), and which cuts the wire (29) after half-thickness cutting.

Description

Technical Field

[0001] The present invention relates to a semiconductor manufacturing apparatus and a semiconductor device. Background Art

[0002] Currently, in the manufacture of semiconductor devices, aluminum wires are used to connect bonding members such as semiconductor elements. After bonding of the aluminum wires, unnecessary excess portions of the aluminum wires are cut off.

[0003] For example, Patent Document 1 describes a method in which, in order to avoid damaging the semiconductor element when cutting the aluminum wire, the remaining portion of the aluminum wire is half-cut at a position in the air near the semiconductor element, and then the portion is torn apart to cut the aluminum wire.

[0004] Patent Document 1: Japanese Patent Application Publication No. 2002-26058

[0005] In recent years, semiconductor devices have been moving towards space saving and higher performance. As a result, for semiconductor devices that operate at high temperatures and have long life, research is underway to replace the conventional wiring technology using aluminum wires with wiring technology using copper wires that are harder than aluminum wires or other metal wiring that is expected to achieve higher durability of semiconductor devices.

[0006] However, in wiring technology using copper conductors, there is a problem that, since the copper conductors have a higher hardness than aluminum conductors, a cutting member such as a cutter bears a higher load than before, and thus the cutting member is worn further or damaged more frequently. Summary of the invention

[0007] Therefore, an object of the present invention is to provide a technology capable of reducing the load applied to a cutting member when manufacturing a semiconductor device using a wire having a higher hardness than an aluminum wire as wiring.

[0008] The semiconductor manufacturing device to which the present invention relates manufactures a semiconductor device, and comprises: a wire supplying section that supplies a wire; a tool that joins the wire supplied from the wire supplying section with a plurality of joined parts of the semiconductor device; a first blade that half-thickness cuts the remaining part of the wire except for the part between the plurality of joined parts; and a second blade that has an acute-angled blade tip that is smaller than the blade tip of the first blade, and cuts the wire after the half-thickness cutting.

[0009] Effects of the Invention

[0010] According to the present invention, the remaining portion of the wire is cut twice by the first blade and the second blade. Therefore, when manufacturing a semiconductor device that uses a wire with a higher hardness than an aluminum wire as wiring, the load on the cutting parts, i.e., the first blade and the second blade, can be reduced compared to the case where the wire is cut once. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 It is a side view showing the structure of a wire feeder and its surroundings included in the semiconductor manufacturing apparatus according to the embodiment.

[0012] Figure 2 It is a perspective view of a housing-type semiconductor device.

[0013] Figure 3 It is a cross-sectional view of a housing-type semiconductor device.

[0014] Figure 4 It is a side view of a lead frame type semiconductor device.

[0015] Figure 5 It is a cross-sectional view of a lead frame type semiconductor device.

[0016] Figure 6 It is a side view showing an example of a driving mechanism for driving a first blade and a second blade included in the semiconductor manufacturing apparatus according to the embodiment.

[0017] Figure 7 It is a side view showing another example of a driving mechanism for driving the first blade and the second blade included in the semiconductor manufacturing apparatus according to the embodiment.

[0018] Figure 8 This is a side view showing an example of a cut surface of a conductive wire.

[0019] Fig. 9 It is a side view showing another example of the cut surface of the conductor wire.

[0020] Fig.10 It is a side view showing the operation of a wiring process of the semiconductor manufacturing apparatus according to the embodiment.

[0021] Fig.11 It is a side view showing the operation of a wiring process of the semiconductor manufacturing apparatus according to the embodiment.

[0022] Fig.12 It is a side view showing the operation of a wiring process of the semiconductor manufacturing apparatus according to the embodiment.

[0023] Fig.13 It is a side view showing the operation of a wiring process of the semiconductor manufacturing apparatus according to the embodiment.

[0024] Fig.14 It is a side view showing the operation of a wiring process of the semiconductor manufacturing apparatus according to the embodiment.

[0025] Fig.15 It is a side view showing the operation of a wiring process of the semiconductor manufacturing apparatus according to the embodiment.

[0026] Fig.16 It is a side view showing the operation of a wiring process of the semiconductor manufacturing apparatus according to the embodiment.

[0027] Fig.17 It is a side view showing the operation of a wiring process of the semiconductor manufacturing apparatus according to the embodiment.

[0028] Fig.18 It is a side view showing the operation of a wiring process of the semiconductor manufacturing apparatus according to the embodiment. DETAILED DESCRIPTION

[0029] <Implementation Method>

[0030] Hereinafter, the embodiments will be described using the drawings. Figure 1 It is a side view showing the structure of the wire feeder 1 and its surroundings included in the semiconductor manufacturing apparatus 100 according to the embodiment.

[0031] like Figure 1 As shown, the semiconductor manufacturing apparatus 100 is an apparatus for manufacturing a semiconductor device, and more specifically, is an apparatus for performing a wiring process which is a part of the manufacturing process of the semiconductor device.

[0032] (Structure of Semiconductor Device)

[0033] First, the housing-type semiconductor device 20 manufactured by the semiconductor manufacturing apparatus 100 will be briefly described. Figure 2 It is a perspective view of a housing-type semiconductor device 20 . Figure 3 FIG. 2 is a cross-sectional view of a housing-type semiconductor device 20. Figure 2 and Figure 3 As shown in FIG. 1 , the housing-type semiconductor device 20 includes an insulating substrate 22, a semiconductor element 25, a housing 26, a terminal 27, a sealing resin 28, and a wire 29. The insulating substrate 22 includes an insulating layer 21a, a metal pattern 21b provided on the upper surface of the insulating layer 21a, and a metal pattern 21c provided on the lower surface of the insulating layer 21a. The metal patterns 21b and 21c are made of copper, aluminum, or nickel. In addition, when the metal patterns 21b and 21c are copper patterns, nickel plating or the like may be performed on the copper patterns.

[0034] The semiconductor element 25 is mounted on the metal pattern 21b via the bonding material 24. The semiconductor element 25 is, for example, an IGBT (Insulated Gate Bipolar Transistor), an RC-IGBT (Reverse Conducting-IGBT), a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) or a FWD (Free Wheeling Diode). The material of the semiconductor element 25 can be ordinary silicon (Si), or a wide bandgap semiconductor such as silicon carbide (SiC), gallium nitride (GaN) or diamond. When the material of the semiconductor element 25 is a wide bandgap semiconductor, stable operation at high temperature and high voltage and high speed of switching can be achieved. In addition, the number of semiconductor elements 25 can be one or more.

[0035] The housing 26 is formed in a rectangular frame shape and is fixed to the side of the insulating substrate 22 in a manner that surrounds the side of the insulating substrate 22 and the semiconductor element 25. The terminal 27 is mounted on the inner peripheral surface of the housing 26. The terminal 27 is not limited to this mounting method, and may be buried in the encapsulating resin 28 or may be provided integrally with the housing 26 by insert molding. One end of the terminal 27 protrudes to the outside of the housing 26 and is bent in the horizontal direction (see Figure 2 ). In addition, you can also Figure 3 As shown, the terminal 27 is not bent in the horizontal direction, but remains upright in the vertical direction.

[0036] The wire 29 connects the semiconductor element 25 to the terminal 27 and connects the semiconductor elements 25 to each other. The wire 29 is made of a metal having a higher hardness than aluminum and is, for example, a copper wire having a circular cross section with a diameter of 100 μm or more and 600 μm or less. Alternatively, it may be a copper ribbon wire having a rectangular cross section with a width of 0.1 mm or more and about 20 mm or less and a height of 0.1 mm or more and about 5 mm or less.

[0037] The sealing resin 28 is filled in the case 26 to seal the semiconductor element 25 mounted on the insulating substrate 22. The sealing resin 28 is epoxy resin or the like.

[0038] After the semiconductor element 25 is mounted on the insulating substrate 22, a wiring process is performed, and the wiring process is performed by conducting internal wiring through the wire 29. The wiring process is a process of connecting the first bonded portion and the second bonded portion of the semiconductor device 20 such as the semiconductor element 25 and the terminal 27, the semiconductor element 25 and the metal pattern 21b formed on the upper surface of the insulating substrate 22, or the semiconductor elements 25 to each other (one semiconductor element 25 and another semiconductor element 25) through the wire 29, and is an important process for the semiconductor device 20 to realize the electrical function.

[0039] The semiconductor manufacturing apparatus 100 can be used to manufacture not only the housing-type semiconductor device 20 but also the lead frame-type semiconductor device 40. The lead frame-type semiconductor device 40 will also be briefly described. Figure 4 It is a side view of a lead frame type semiconductor device 40 . Figure 5 It is a cross-sectional view of a lead frame type semiconductor device 40 .

[0040] like Figure 4 and Figure 5 As shown, the lead frame type semiconductor device 40 includes a lead frame 41 , an insulating sheet 42 , a plurality of semiconductor elements 25 , wires 29 , a lead frame 43 , and a sealing resin 28 .

[0041] The insulating sheet 42 is bonded to the lower surface of the lead frame 41. Some of the semiconductor elements 25 are mounted on the upper surface of the lead frame 41 via the bonding material 24, and the remaining semiconductor elements 25 are mounted on the upper surface of the lead frame 43 via the bonding material 24a having different properties from the bonding material 24. The bonding materials 24, 24a are solder, silver paste, sintered paste, etc. The wire 29 connects the semiconductor element 25 to the lead frame 43 and connects the semiconductor elements 25 to each other. The wire 29 connected to the semiconductor element 25 mounted on the upper surface of the lead frame 43 sometimes has a wire diameter different from that of other wires 29. The encapsulation resin 28 is formed into a rectangular parallelepiped shape to encapsulate the lead frame 41, the insulating sheet 42, the plurality of semiconductor elements 25, the wire 29, and the lead frame 43. In addition, in Figure 5 In the figure, the sealing resin 28 is omitted.

[0042] (Structure of semiconductor manufacturing equipment)

[0043] Next, the semiconductor manufacturing apparatus 100 will be described. Figure 1As shown, the semiconductor manufacturing apparatus 100 has a wire feeder rack 2, a tool 3, a wire clamp 4, a first blade 5, a second blade 6, and a wire feeder 1 as a wire supply unit. Hereinafter, the mechanism composed of the wire feeder 1, the wire feeder rack 2, the tool 3, the wire clamp 4, the first blade 5, and the second blade 6 is also referred to as a wire bonding mechanism unit. That is, the semiconductor manufacturing apparatus 100 has a wire bonding mechanism unit. In addition, although not shown in the figure, the semiconductor manufacturing apparatus 100 also has a reel around which a wire 29 is wound. The reel supplies the wire 29 to the wire feeder 1.

[0044] The wire feeder 1 is formed in a conical shape and is held by a wire feeder frame 2. In addition, the wire feeder 1 has a through hole (not shown) formed inside along the length direction. The wire 29 supplied from the reel is inserted into the through hole of the wire feeder 1, and the wire feeder 1 guides the wire 29 from the entrance to the exit of the through hole. The entrance of the through hole is located at the upper end of the wire feeder 1, and the exit of the through hole is located at the lower end of the wire feeder 1.

[0045] The wire clamp 4 is disposed on the upper side of the wire feeder 1 , and clamps the conductive wire 29 supplied from the reel to the wire feeder 1 on the upper side of the wire feeder 1 .

[0046] The tool 3 is arranged on the lower side of the wire feeder 1 in such a manner that the front end of the tool 3 is located around the outlet of the through hole of the wire feeder 1. In addition, the tool 3 generates friction heat by pressing the wire 29 supplied from the wire feeder 1 while applying vibration, and the wire 29 is melted by the friction heat, thereby joining the first bonded part and the second bonded part of the semiconductor device 20. In addition, when a method called seam welding bonding is used, it is natural that the wire 29 is connected not only to the first bonded part and the second bonded part, but also to more than or equal to three bonded parts such as the third bonded part and the fourth bonded part.

[0047] The semiconductor manufacturing device 100 is a front-cutting type semiconductor manufacturing device. Therefore, the first blade 5 is arranged on the front side of the tool 3, that is, on the opposite side of the wire feeder frame 2 relative to the tool 3. In addition, the first blade 5 is arranged in a manner that the front end of the first blade 5, that is, the tip of the blade is located around the front end of the tool 3. The shape of the tip of the first blade 5 is spherical, rectangular or trapezoidal, and the angle of the tip of the first blade 5 is an obtuse angle. The first blade 5 performs half-thickness cutting on the remaining portion of the conductor 29 except for the portion between the first joined portion and the second joined portion. Here, half-thickness cutting refers to cutting to a thickness of about half the diameter of the conductor 29.

[0048] In addition, the width of the first blade 5 is formed larger than the diameter of the wire 29, and the tip of the first blade 5 and the portion in contact with the wire 29 are finely ground. Thus, the first blade 5 can be prevented from being damaged during the cutting operation due to minor damage to the first blade 5, and the cutting operation can be performed smoothly.

[0049] The second blade 6 is arranged between the tool 3 and the first blade 5. In addition, the second blade 6 is arranged in such a manner that the front end of the second blade 6, that is, the blade tip is located around the front end of the tool 3. The second blade 6 has a blade tip with an acute angle smaller than that of the blade tip of the first blade 5, and in the static state of the wire bonding mechanism part, the blade tip of the second blade 6 is located above the blade tip of the first blade 5. The second blade 6 cuts the wire 29 after the half-thickness cutting by the first blade 5. In addition, the positional relationship between the blade tip of the first blade 5 and the blade tip of the second blade 6 varies depending on the structure of the driving mechanism that drives the first blade 5 and the second blade 6, and is therefore not limited to the above-mentioned positional relationship.

[0050] In addition, the width of the second blade 6 is formed larger than the diameter of the wire 29, and the tip of the second blade 6 and the portion in contact with the wire 29 are finely ground. Thus, the second blade 6 can be prevented from being damaged during the cutting operation due to minor damage to the second blade 6, and the cutting operation can be performed smoothly.

[0051] The first blade 5 and the second blade 6 are arranged opposite to the wire feeder 1 with the tool 3 interposed therebetween. The second blade 6 is arranged closer to the tool 3 than the first blade 5 . However, the present invention is not limited thereto. The first blade 5 may be arranged closer to the tool 3 than the second blade 6 .

[0052] The semiconductor manufacturing apparatus 100 is not limited to the front cutting type, but may be a rear cutting type. In this case, the first blade 5 and the second blade 6 only need to be arranged between the tool 3 and the wire feeder 1 .

[0053] In addition, the semiconductor manufacturing apparatus 100 may be a combination of the front cutting type and the back cutting type. In this case, the first blade 5 is arranged between the tool 3 and the wire feeder 1, and the second blade 6 is arranged on the opposite side of the tool 3 and the wire feeder 1.

[0054] Next, a driving mechanism for driving the first blade 5 and the second blade 6 will be described. Figure 6 It is a side view showing an example of a driving mechanism for driving the first blade 5 and the second blade 6 included in the semiconductor manufacturing apparatus 100 according to the embodiment. Figure 7 It is a side view showing another example of the driving mechanism for driving the first blade 5 and the second blade 6 included in the semiconductor manufacturing apparatus 100 according to the embodiment.

[0055] like Figure 6As shown, the first blade 5 is moved upward and downward by a damper mechanism 7. The second blade 6 is moved upward and downward by a motor 8. The damper mechanism 7 can be constructed inexpensively compared to the motor 8, but the positioning accuracy of the first blade 5 is reduced compared to the case where the motor 8 is used, and therefore, the processing accuracy of the cut surface 30 is also reduced. Therefore, it is preferable to use the motor 8 to drive the second blade 6 which requires higher processing accuracy. The first blade 5 does not require processing accuracy as high as the second blade 6, and therefore, the damper mechanism 7 is used to drive the first blade 5. In addition, when the component cost of the semiconductor manufacturing device 100 is not a problem, it is also possible as shown in FIG. Figure 7 As shown, the first blade 5 is driven by a motor 8a, and the second blade 6 is driven by a motor 8b.

[0056] Next, the cut surface of the conductive wire 29 will be described. Figure 8 It is a side view showing an example of a cut surface of the conductive wire 29 . Fig. 9 It is a side view showing another example of the cut surface of the conductive wire 29 .

[0057] After the conductor 29 is cut at half thickness by the first blade 5, it is cut by the second blade 6, thereby Figure 8 and Fig. 9 As shown, two different continuous cut surfaces 30 and 31 are formed. Specifically, the cut surface 30 obtained by the first blade 5 and the cut surface 31 obtained by the second blade 6 are formed continuously in the vertical direction. Figure 8 FIG. 3 shows a cut surface 30 when the blade tip of the first blade 5 is spherical. Fig. 9 The cut surface 30 is shown when the blade tip of the first blade 5 is rectangular.

[0058] (Operation of semiconductor manufacturing equipment)

[0059] Next, the operation of the semiconductor manufacturing apparatus 100 will be described. Figures 10 to 18 It is a side view showing the operation of the wiring process of the semiconductor manufacturing apparatus 100 according to the embodiment. Hereinafter, the case of manufacturing the semiconductor device 20 is described, but the case of manufacturing the semiconductor device 40 is the same, so the description of the case of manufacturing the semiconductor device 40 is omitted.

[0060] First, if Fig.10As shown, the wire bonding mechanism composed of the wire feeder 1, the wire feeder frame 2, the tool 3, the wire clamp 4, the first blade 5 and the second blade 6 is lowered toward the first bonded portion, that is, the semiconductor element 25. Usually, the wire bonding mechanism is lowered at a high speed to a distance of about 500 μm or more and less than 1000 μm relative to the first bonded portion, and then lowered at a low speed called a search speed, thereby detecting the first bonded portion. The low speed of the descent is because the fluctuation of the height position of the first bonded portion is taken into account.

[0061] Next, if Fig.11 As shown, if the semiconductor manufacturing apparatus 100 detects the first bonded portion, the tool 3 outputs the load and ultrasonic vibration required for the wiring process at a predetermined time. Through this action, the bonding between the first bonded portion and the wire 29 is completed. In the case where the wire 29 is an aluminum wire with a wire diameter of about 100 μm or more and about 500 μm or less, a bonding time of about 50 ms or more and about 300 ms or less is required, but in the case where the wire 29 is a copper wire, although the bonding time varies depending on the wire diameter, it is slightly longer than that of the aluminum wire.

[0062] Next, when the first joined portion and the conductor 29 are joined, the wiring track (loop) forming operation is started. Fig.12 and Fig.13 As shown, the wire bonding mechanism portion rises and moves horizontally toward the second bonded portion. At this time, the wire bonding mechanism portion is subjected to an up-and-down motion for the purpose of forming a mountain-shaped ring or a trapezoidal ring, and sometimes a mechanical contact deformation is applied to the wire 29 by a ring forming member (not shown).

[0063] Next, if Fig.14 As shown in FIG. 1 , the wire bonding mechanism unit descends toward the second bonded portion while performing a loop forming operation. In addition, the wire bonding mechanism unit before descending is indicated by a double-dashed line. Fig.10 Similarly to the operation described in , the wire bonding mechanism unit descends at high speed to about 500 μm or more and 1000 μm or less relative to the second bonded portion, and then descends at a low speed called a seek speed, thereby detecting the second bonded portion.

[0064] Next, if Fig.15 As shown in Fig.11 The same operation as described in . If the semiconductor manufacturing apparatus 100 detects the second bonded portion, the tool 3 outputs the load and ultrasonic vibration required for the wiring process at a predetermined time. Through this operation, the bonding between the second bonded portion and the wire 29 is completed.

[0065] Next, if Fig.16As shown in FIG. 1 , if the bonding between the second bonded portion and the wire 29 is completed, the wire bonding mechanism unit temporarily rises before the cutting action, and the wire bonding mechanism unit performs an action of pulling out the wire 29 by the distance required for the bonding of the first point of the next wire 29 (bonding of the first bonded portion). This action is performed by the rise of the wire bonding mechanism unit and the horizontal movement along the wiring direction. When the wire 29 by the distance required for the bonding of the first point of the next wire 29 is secured, the cutting action is started.

[0066] Next, if Fig.17 As shown, after the wire bonding mechanism is lowered to a height position required for cutting the wire 29 , the first blade 5 is lowered to cut the wire 29 at half thickness, and then the second blade 6 is lowered to cut the wire 29 .

[0067] Next, if Fig.18 As shown, after the first blade 5 and the second blade 6 rise, the wire bonding mechanism moves in the wiring direction by a predetermined distance, and performs a tearing operation when there is incomplete cutting.

[0068] (Effect)

[0069] Thus, the semiconductor manufacturing device 100 involved in the embodiment comprises: a wire feeder 1, which supplies a conductor 29; a tool 3, which joins the conductor 29 supplied from the wire feeder 1 with a plurality of joined portions of the semiconductor device 20, 40; a first blade 5, which half-cuts the remaining portion of the conductor 29 except for the portion between the plurality of joined portions; and a second blade 6, which has an acute-angled blade tip with a smaller angle than the blade tip of the first blade 5, and cuts the conductor 29 after the half-thickness cutting.

[0070] Therefore, the remaining portion of the wire 29 is cut twice by the first blade 5 and the second blade 6, so when manufacturing the semiconductor device 20, 40 using the wire 29 having a higher hardness than the aluminum wire as wiring, the load on the cutting member, i.e., the first blade 5 and the second blade 6, can be reduced compared to the case where the wire 29 is cut once. As a result, the wear of the first blade 5 and the second blade 6 is suppressed, and the first blade 5 and the second blade 6 are not easily damaged, so that a semiconductor manufacturing device having a cutting member with a longer life than before can be provided.

[0071] In addition, since the replacement frequency of the first blade 5 and the second blade 6 is reduced, it is possible to reduce the stop time of the semiconductor manufacturing apparatus 100 associated with the replacement of the first blade 5 and the second blade 6. Thus, the productivity of the semiconductor devices 20 and 40 can be improved.

[0072] In addition, the semiconductor manufacturing apparatus 100 further includes a damper mechanism 7 for moving the first blade 5 and a motor 8 for moving the second blade 6. Since the first blade 5 does not require as high a processing accuracy as the second blade 6, the damper mechanism 7 can be used to drive the first blade 5, thereby achieving low cost of the semiconductor manufacturing apparatus 100.

[0073] In addition, the angle of the tip of the second blade 6 is an acute angle, so the wear of the second blade 6 tends to be faster, but the angle of the tip of the first blade 5 is an obtuse angle. After the conductor 29 is cut by the first blade 5 at half thickness, it is cut by the second blade 6, thereby suppressing the wear of the second blade 6.

[0074] In addition, the semiconductor device 20, 40 includes a semiconductor element 25 and a wire 29, the wire 29 being connected to the semiconductor element 25 and having two continuous different cut surfaces 30, 31. The wire 29 is formed with the cut surface 30 realized by the first blade 5 and the cut surface 31 realized by the second blade 6, so that the fact that two cuts are performed can be clearly shown by the continuous different cut surfaces 30, 31. In addition, the anchoring effect of the encapsulation resin 28 realized by the wire 29 can be improved, so that the life of the joint portion between the wire 29 and the first joint portion and the joint portion between the wire 29 and the second joint portion can be improved.

[0075] In addition, the embodiments can be modified as appropriate.

[0076] Hereinafter, each aspect of the present invention will be described collectively as supplementary notes.

[0077] (Note 1)

[0078] A semiconductor manufacturing device for manufacturing a semiconductor device, the semiconductor manufacturing device comprising:

[0079] a wire supplying section for supplying wires;

[0080] a tool for joining the wire supplied from the wire supplying section to a plurality of joined portions of the semiconductor device;

[0081] a first blade for cutting the remaining portion of the conductor at half thickness except for the portion between the plurality of joined portions; and

[0082] The second blade has a blade tip having an acute angle smaller than that of the blade tip of the first blade, and cuts the conductive wire after the half-thickness cutting.

[0083] (Note 2)

[0084] The semiconductor manufacturing apparatus according to Supplementary Note 1, further comprising:

[0085] a damper mechanism for moving the first blade; and

[0086] A motor is provided to move the second blade.

[0087] (Note 3)

[0088] The semiconductor manufacturing apparatus according to Supplement 1 or 2, wherein:

[0089] The angle of the blade tip of the first blade is an obtuse angle.

[0090] (Note 4)

[0091] A semiconductor device comprising:

[0092] Semiconductor components; and

[0093] The wire is connected to the semiconductor element and has two continuous and different cut surfaces.

[0094] (Note 5)

[0095] A semiconductor device according to Appendix 4, wherein:

[0096] The conductive wire has a diameter of 100 μm or more and 600 μm or less and is made of a metal having a higher hardness than aluminum.

[0097] (Note 6)

[0098] A semiconductor device according to Appendix 4 or 5, wherein:

[0099] The conductor is a ribbon conductor.

[0100] Description of the label

[0101] 1 wire feeder, 3 tool, 5 first blade, 6 second blade, 7 damper mechanism, 8, 8a, 8b motor, 20 semiconductor device, 25 semiconductor element, 29 wire, 30, 31 cut surface, 40 semiconductor device, 100 semiconductor manufacturing device.

Claims

1. A semiconductor manufacturing device for manufacturing a semiconductor device, the semiconductor manufacturing device comprising: a wire supplying section for supplying wires; a tool for joining the wire supplied from the wire supplying section to a plurality of joined portions of the semiconductor device; a first blade for cutting the remaining portion of the conductor at half thickness except for the portion between the plurality of joined portions; as well as The second blade has a blade tip having an acute angle smaller than that of the blade tip of the first blade, and cuts the conductive wire after the half-thickness cutting.

2. The semiconductor manufacturing apparatus according to claim 1, wherein: Also features: a damper mechanism for moving the first blade; and A motor is provided to move the second blade.

3. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein: The angle of the blade tip of the first blade is an obtuse angle.

4. A semiconductor device comprising: Semiconductor components; and The wire is connected to the semiconductor element and has two continuous and different cut surfaces.

5. The semiconductor device according to claim 4, wherein: The conductive wire has a diameter of 100 μm or more and 600 μm or less and is made of a metal having a higher hardness than aluminum.

6. The semiconductor device according to claim 4 or 5, wherein: The conductor is a ribbon conductor.

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