Substrate processing apparatus including substrate supporting unit

Abstract

Disclosed is a substrate processing apparatus including a substrate supporting unit. The substrate supporting unit supports a substrate, has at least one pin hole formed vertically through the substrate supporting unit, and accommodates a lift pin in the at least one pin hole to allow the lift pin to ascend and descend through the pin hole. The substrate supporting unit includes: a ceramic tray on which the substrate is placed; a base plate configured to support the ceramic tray; the bonding layer is used for connecting the ceramic plate and the bottom plate; and the bush is arranged around the pin hole. The bushing comprises a first bushing and a second bushing, wherein the first bushing is tubular; and a second bush coupled to an outer peripheral surface of the first bush, and the first bush including a protruding portion formed on an upper surface of the first bush.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus including a substrate supporting unit. More particularly, the present invention relates to a substrate processing apparatus including a substrate supporting unit capable of reducing an assembly tolerance of a bushing provided in the substrate supporting unit. Background Art

[0002] Generally speaking, the process of manufacturing a semiconductor device includes a deposition process for forming a thin film on a semiconductor substrate, a chemical / mechanical polishing process for planarizing the thin film, a photoresist process for forming a photoresist pattern on the thin film, an etching process for etching the thin film using the photoresist pattern to form a pattern having electrical characteristics, an ion implantation process for implanting specific ions into a predetermined area of ​​the substrate, a cleaning process for removing impurities from the substrate, and an inspection process for inspecting the surface of the substrate on which the thin film or pattern is formed.

[0003] Plasma may be used in some of the above processes. A substrate supporting unit for supporting a substrate may be provided in a plasma-using chamber of a substrate processing apparatus. The substrate may be placed on an upper surface of the substrate supporting unit, and lift pins for loading / unloading the substrate onto / from the upper surface of the substrate supporting unit may be provided in the substrate supporting unit.

[0004] Figure 1 is a view showing a bushing provided in a conventional substrate supporting unit.

[0005] See also Figure 1 , a conventional substrate support unit 20 may include an electrostatic chuck 210 including a ceramic disc 212 and a base plate 214. The electrostatic chuck 210 may include an adhesive layer 216 to bond the ceramic disc 212 and the base plate 214 to each other. The substrate support unit 20 may include a pin hole 220 formed therein to allow a lift pin 232 to vertically move through the pin hole. The lift pin 232 may vertically move through the pin hole 220 to load and unload the substrate. A bushing 24 is disposed around the pin hole 220 in the substrate support unit 20.

[0006] Generally, the bushing 24 includes a first bushing 242, a second bushing 244, and a bonding layer 246. The bushing 24 is provided in a state of being bonded to the ceramic disk 212 in the substrate supporting unit 20. However, in a process of bonding the bushing 24 and the ceramic disk 212 to each other, the bushing 24 and the ceramic disk 212 may be misaligned with each other, which may cause an assembly tolerance between the bushing 24 and the ceramic disk 212. In particular, when a process using plasma is performed, plasma may enter an assembly tolerance portion, which may generate particles, thereby causing a reduction in product yield.

[0007] Furthermore, when the lift pin 232 moves through the pin hole 200 , the lift pin 232 may be damaged due to an assembly tolerance between the first bushing 242 and the second bushing 244 . Summary of the invention

[0008] The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus including a substrate supporting unit capable of reducing an assembly tolerance between a bushing and a ceramic disk.

[0009] The objects to be achieved by the present invention are not limited to the above objects, and other objects not mentioned herein will be clearly understood by those skilled in the art from the following description.

[0010] According to one aspect of the present invention, the above and other purposes can be achieved by providing a substrate supporting unit, which supports the substrate and has at least one pin hole formed to vertically pass through the substrate supporting unit, and accommodates a lifting pin in the at least one pin hole so as to allow the lifting pin to rise and fall through the at least one pin hole. The substrate supporting unit includes: a ceramic disk, which is configured to allow the substrate to be placed on the ceramic disk; a base plate, which is configured to support the ceramic disk; an adhesive layer, which is used for connection between the ceramic disk and the base plate; and a bushing, which is arranged to surround the at least one pin hole, wherein the bushing includes: a first bushing, which is tubular; and a second bushing, which is connected to the outer peripheral surface of the first bushing, and the first bushing includes a protrusion formed on the upper surface of the first bushing.

[0011] In one embodiment, the protrusion portion may protrude from an upper surface of the first bushing to a predetermined height in a longitudinal direction of the first bushing, and may be coupled to a concave portion formed in a lower surface of the ceramic disk.

[0012] In one embodiment, the substrate supporting unit may further include an adhesive layer for coupling the bushing to the substrate supporting unit.

[0013] In one embodiment, the substrate supporting unit may further include a coating layer formed between the adhesive layer and the bottom plate.

[0014] In one embodiment, the second bushing may be coupled to the base plate and the first bushing in a state of being inserted into a groove formed in the base plate.

[0015] In one embodiment, the second bushing may not be exposed to the at least one pin hole.

[0016] In one embodiment, the first bushing may include a lower region and an upper region formed on the lower region, and the second bushing may be coupled to the lower region of the first bushing in an assembled manner.

[0017] In one embodiment, the bonding layer may be formed on an upper surface of the first bushing, on an outer peripheral surface of the first bushing, and on an upper surface of a second bushing coupled to the first bushing.

[0018] According to another aspect of the present invention, there is provided a substrate processing device, comprising: a chamber having a processing space defined therein; a substrate supporting unit disposed in the processing space to support a substrate, the substrate supporting unit having at least one pin hole formed to vertically pass through the substrate supporting unit and accommodating a lifting pin in the at least one pin hole so as to allow the lifting pin to rise and fall through the at least one pin hole; a gas supply unit configured to supply gas to the processing space; a plasma generating unit configured to convert the supplied gas into plasma; and a controller configured to control the gas supply unit and the plasma generating unit, wherein the substrate supporting unit comprises: a ceramic disk configured to allow a substrate to be placed on the ceramic disk; a bottom plate configured to support the ceramic disk; an adhesive layer used for connection between the ceramic disk and the bottom plate; and a bushing disposed to surround the at least one pin hole, the bushing comprising: a first bushing having a tubular shape; and a second bushing coupled to an outer peripheral surface of the first bushing, and the first bushing comprising a protruding portion formed on an upper surface of the first bushing.

[0019] In one embodiment, the protrusion portion may protrude from an upper surface of the first bushing to a predetermined height in a longitudinal direction of the first bushing, and may be coupled to a concave portion formed in a lower surface of the ceramic disk.

[0020] In one embodiment, the substrate supporting unit may further include an adhesive layer for coupling the bushing to the substrate supporting unit.

[0021] In one embodiment, the substrate processing apparatus may further include a coating layer formed between the adhesive layer and the base plate.

[0022] In one embodiment, the second bushing may be coupled to the base plate and the first bushing in a state of being inserted into a groove formed in the base plate.

[0023] In one embodiment, the second bushing may not be exposed to the at least one pin hole.

[0024] In one embodiment, the bonding layer may be formed on an upper surface of the first bushing, on an outer peripheral surface of the first bushing, and on an upper surface of a second bushing coupled to the first bushing.

[0025] According to another aspect of the present invention, there is provided a substrate processing apparatus, comprising: a chamber having a processing space defined therein; a substrate supporting unit disposed in the processing space to support a substrate, the substrate supporting unit having at least one pin hole formed to vertically penetrate the substrate supporting unit and to accommodate a lift pin in the at least one pin hole so as to allow the lift pin to rise and fall through the at least one pin hole; a gas supply unit configured to supply gas to the processing space; a plasma generating unit configured to convert the supplied gas into plasma; and a controller configured to control the gas supply unit and the plasma generating unit, wherein the substrate supporting unit comprises: a ceramic disk configured to allow the substrate to be placed on the ceramic disk; a bottom plate configured to support a support ceramic disk; an adhesive layer used for connecting the ceramic disk and the base plate; and a bushing arranged to surround at least one pin hole, wherein the bushing comprises: a first bushing, which is tubular and connected to the ceramic disk, the adhesive layer and the base plate; and a second bushing, which is connected to the outer peripheral surface of the first bushing and the base plate, wherein the bushing comprises: a first bushing, which is tubular and connected to the ceramic disk, the adhesive layer and the base plate; and a second bushing, which is connected to the outer peripheral surface of the first bushing and the base plate, the first bushing comprises: a lower area; an upper area formed on the lower area; and a protrusion formed on the upper surface of the upper area, and the first bushing is integrally connected to the ceramic disk in a manner that the protrusion is inserted into a recessed portion formed in the lower surface of the ceramic disk.

[0026] In one embodiment, the substrate supporting unit may further include an adhesive layer for coupling the bushing to the substrate supporting unit.

[0027] In one embodiment, the substrate processing apparatus may further include a coating layer formed between the adhesive layer and the base plate.

[0028] In one embodiment, the second bushing may be coupled to the base plate and the first bushing in a state of being inserted into a groove formed in the base plate.

[0029] In one embodiment, the second bushing may have an annular shape, and the second bushing may be coupled to an outer peripheral surface of a lower region of the first bushing in a fitting manner. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The above and other objects, features and other advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0031] Figure 1is a view showing a bushing provided in a conventional substrate supporting unit;

[0032] Figure 2 is a view showing a substrate processing apparatus according to an embodiment of the present invention;

[0033] Figure 3 is a view showing a substrate supporting unit according to an embodiment of the present invention; and

[0034] Figure 4 is a view illustrating a bushing provided in a substrate supporting unit according to an embodiment of the present invention. DETAILED DESCRIPTION

[0035] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily perform these embodiments. However, the present invention can be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein.

[0036] In the following description of the embodiments of the present invention, when it may make the subject matter of the present invention unnecessarily obscure, detailed description of known functions or configurations incorporated herein will be omitted. Throughout the drawings, parts performing similar functions and operations are denoted by the same reference numerals.

[0037] At least some of the terms used in this specification are defined in consideration of the functions obtained according to the present invention, and may be changed according to the intention or practice of the user or operator. Therefore, the definitions of these terms should be determined based on the overall content of this specification.

[0038] As used herein, unless the context clearly indicates otherwise, the singular form may include the plural form. In addition, unless otherwise mentioned, the terms "include", "comprises" or "having" described herein should not be interpreted as excluding other elements, but further including such other elements.

[0039] In the drawings, the size or shape of elements and the thickness of lines may be exaggerated for clarity and convenience of description.

[0040] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and even if the same or similar elements are depicted in different drawings, they are denoted by the same reference numerals and redundant description thereof will be omitted.

[0041] Figure 2 is a view showing a substrate processing apparatus according to an embodiment of the present invention, and Figure 3 is a view showing a substrate supporting unit according to an embodiment of the present invention.

[0042] See also Figure 2 and Figure 3, the substrate treating apparatus 10 may include a chamber 100 , a substrate supporting unit 200 , a plasma generating unit 300 , a gas supply unit 400 , and a controller 500 .

[0043] The chamber 100 may include a processing space defined therein to allow a plasma process to be performed in the processing space. The chamber 100 may include an exhaust port 102 formed in the lower side of the chamber. The exhaust port 102 may be connected to an exhaust line installed with a pump P. The exhaust port 102 may exhaust reaction byproducts generated during the plasma process and gases remaining in the chamber 100 to the outside of the chamber 100 through the exhaust line. In this case, the pressure in the internal space within the chamber 100 may be reduced to a predetermined pressure.

[0044] The chamber 100 may include an opening 104 formed in a sidewall thereof. The opening 104 may serve as a passage through which a substrate W is introduced into the chamber 100 or removed from the chamber. The opening 104 may be configured to be opened and closed by a door assembly.

[0045] The substrate supporting unit 200 may be disposed in a lower region in the chamber 100. The substrate supporting unit 200 may support the substrate W using an electrostatic force. However, the embodiment is not limited thereto. The substrate W may be supported in various ways, such as mechanical clamping or vacuum support.

[0046] In the case of supporting the substrate W using an electrostatic force, the substrate supporting unit 200 may include an electrostatic chuck 210 including a ceramic disk 212 and a bottom plate 214 .

[0047] The substrate W may be placed on an upper surface of the ceramic disk 212, and the electrode 212a and the heater 212b may be provided in the ceramic disk 212. The ceramic disk 212 may be made of a ceramic material such as quartz.

[0048] The bottom plate 214 may be disposed below the ceramic disk 212. The bottom plate 214 may have a disk shape and may be made of metal. The bottom plate 214 may include a lower region 214a having a predetermined diameter and an upper region 214b having a smaller diameter than the lower region 214a. The cooling channel 224 may be formed in the lower region 214a of the bottom plate 214, and the upper region 214b of the bottom plate 214 may be coupled to the ceramic disk 212.

[0049] In addition, although not shown, a focusing ring (not shown) for controlling plasma on a peripheral portion of the substrate W and an edge ring (not shown) for preventing the side surface of the electrostatic chuck 210 from being damaged may be provided on a portion of the lower region 214a of the base plate 214 that protrudes beyond the upper region 214b of the base plate 214.

[0050] The coating layer 218 may be formed on the periphery of the bottom plate 214. The coating layer 218 may be used to prevent the bottom plate 214 from being exposed to plasma and may have a predetermined thickness. The coating layer 218 may be aluminum oxide (Al 2 O 3 ).

[0051] An adhesive layer 216 may be formed between the ceramic disk 212 and the bottom plate 214 so as to bond the ceramic disk 212 and the bottom plate 214 to each other.

[0052] The base 230 may be disposed under the bottom plate 214 to support the ceramic disk 212 and the bottom plate 214. The base 230 may be formed in a cylindrical shape having a predetermined height and may define a space therein. A lift pin support member 234 for supporting the lift pins 232 may be disposed in the base 230. The lift pin support member 234 may be raised and lowered by the lift pin driving unit 236.

[0053] The substrate support unit 200 may be provided with a plurality of lift pins 232 arranged at regular intervals to load and unload the substrate W. The substrate support unit 200 may include a plurality of pin holes 220 vertically penetrating the substrate support unit 200 to allow the lift pins 232 to vertically move through the pin holes. A bushing 240 arranged around each pin hole 220 may be provided in the substrate support unit 200. The bushing 240 may be used to reduce friction between the lift pins 232 and the substrate support unit 200 and prevent damage to the lift pins 232 due to friction. A detailed description of the bushing 240 will be given later.

[0054] A plurality of lift pins 232 may be provided, and each of the plurality of lift pins 232 may be received in a corresponding one of the pin holes 220 formed in the substrate supporting unit 200. The diameter of the lift pin 232 may be formed to be slightly smaller than that of the pin hole 220.

[0055] The lift pins 232 may be inserted into and fixed in lift pin brackets (not shown). The number of lift pin brackets (not shown) may be the same as the number of lift pins 232 , and the lift pin brackets (not shown) may be coupled and fixed to the lift pin supporting member 234 .

[0056] The lift pin support member 234 may be disposed in the chamber 100 and may support the lift pins 232 and the lift pin bracket (not shown). The lift pin support member 234 may be formed in a plate shape so as to support a plurality of lift pins 232 and the lift pin bracket (not shown). However, the embodiment is not limited thereto. The lift pin support member 234 may be connected to the lift pin driving unit 236 and may be vertically moved by the lift pin driving unit 236.

[0057] The lift pin driving unit 236 can raise and lower the lift pin supporting member 234. Due to the operation of the lift pin driving unit 236, the lift pin supporting member 234 can be moved vertically, and thus, the lift pin 232 can be moved along the pin hole 220. The lift pin driving unit 236 can be disposed outside the chamber 100. The lift pin driving unit 236 can adopt a hydraulic cylinder, a pneumatic cylinder, etc. However, the embodiment is not limited thereto. Although the embodiment of the present invention is described as including one lift pin driving unit 236, the embodiment is not limited thereto. In order to raise and lower the corresponding lift pin 232, a plurality of lift pin driving units 236 may be provided.

[0058] A bellows 238 may be provided between the lift pin driving unit 236 and the lower surface of the chamber 100. Due to the bellows 238, the inside of the chamber 100 may be separated from the outside even when the lift pin supporting member 234 moves vertically.

[0059] The plasma generating unit 300 may generate plasma in the processing space in the chamber 100. The plasma may be generated in a region above the substrate supporting unit 200 in the chamber 100. According to an embodiment of the present invention, the plasma generating unit 300 may generate plasma in the processing space in the chamber 100 using a capacitively coupled plasma (CCP) source.

[0060] However, the embodiment is not limited thereto. The plasma generating unit 300 may also generate plasma within the processing space in the chamber 100 using another type of plasma source, such as an inductively coupled plasma (ICP) source or microwaves.

[0061] The plasma generating unit 300 may include a high frequency power supply 302 and a matching device 304. The high frequency power supply 302 may supply high frequency power to any one of the upper electrode and the lower electrode so as to generate a potential difference between the upper electrode and the lower electrode. Here, the upper electrode may be the shower head 310, and the lower electrode may be the substrate supporting unit 200. The high frequency power supply 302 may be connected to the lower electrode, and the upper electrode may be grounded.

[0062] The shower head 310 may be disposed in the chamber 100 so as to be vertically opposed to the electrostatic chuck 210. The shower head 310 may include a plurality of gas injection holes formed therein to inject gas into the interior of the chamber 100, and may be formed to have a larger diameter than the electrostatic chuck 210. The shower head 310 may be made of a material including a silicon component or a material including a metal component.

[0063] The gas supply unit 400 may supply the gas required for the process to the inside of the chamber 100. The gas supply unit 400 may include a gas source 402, a gas supply line 404, and a gas nozzle. The gas supply line 404 may connect the gas source 402 to the gas nozzle. The gas supply line 404 may supply the gas stored in the gas source 402 to the gas nozzle. A gas supply valve 406 may be installed on the gas supply line 404 so as to open and close a channel of the gas supply line 404 or adjust the amount of fluid flowing through the channel.

[0064] although Figure 2 Although one gas source 402 and one gas supply valve 406 are illustrated in FIG. 4 , the gas supply unit 400 of the present invention may include a plurality of gas sources for supplying a plurality of gases to the chamber 100 , and a plurality of gas supply valves for independently controlling supply of the corresponding gases.

[0065] The controller 500 can comprehensively control the operation of the substrate processing device 10 configured as described above. The controller 500 can be, for example, a computer, and can include a central processing unit (CPU), a random access memory (RAM), a read-only memory (ROM), and an auxiliary storage device. The CPU can operate based on the program or process conditions stored in the ROM or the auxiliary storage device to control the overall operation of the device 10. In an example, the controller 500 can control the supply operation of various gases by the gas supply unit 400 and the operation of the power supply 302 of the plasma generation unit 300. In addition, the computer-readable program required for the control can be stored in a storage medium. The storage medium can include, for example, a floppy disk, a compact disk (CD), a CD-ROM, a hard disk, a flash memory, a DVD, etc. The controller 500 can be set inside or outside the substrate processing device 10. In the case where the controller 500 is set outside the substrate processing device 10, the controller 500 can control the substrate processing device 10 using a wired or wireless communication method.

[0066] In order to perform the process, the controller 500 according to an embodiment of the present invention may perform control so that gas is supplied to the processing space in the chamber 100 and the supplied gas is converted into plasma by the plasma generation unit 300. In addition, the controller 500 may control the lift pin driving unit 236 to vertically move the lift pins 232 in order to load / unload the substrate W before / after performing the process.

[0067] Figure 4 is a view illustrating a bushing provided in a substrate supporting unit according to an embodiment of the present invention.

[0068] See also Figure 4 The bushing 240 according to the embodiment of the present invention may include a first bushing 242 , a second bushing 244 , and a bonding layer 246 .

[0069] The first bushing 242 may be provided in the substrate support unit 200 and may be formed in a tubular shape. According to an embodiment of the present invention, the first bushing 242 may include a lower region 242a, an upper region 242b formed on the lower region 242a, and a protruding portion 242c formed on the upper surface of the upper region 242b. The lower region 242a, the upper region 242b, and the protruding portion 242c of the first bushing 242 may be formed integrally with each other. The protruding portion 242c may protrude to a predetermined height in the longitudinal direction of the first bushing 242, and the ceramic disk 212 may include a recessed portion 212c formed in its lower surface so as to correspond to the protruding portion 242c of the first bushing 242, thereby being coupled to the first bushing 242.

[0070] In this way, in the process of bonding the first bushing 242 and the ceramic disk 212 to each other, the protruding portion 242c of the first bushing 242 can be fitted into the recessed portion 212c in the lower surface of the ceramic disk 212, whereby the first bushing 242 and the ceramic disk 212 can be bonded to each other without being misaligned with each other. Therefore, the first bushing 242 and the ceramic disk 212 are integrally connected to each other during their assembly process, and thus assembly tolerance may not be generated. In particular, since plasma does not enter the assembly tolerance portion, particles caused by plasma are not generated, thereby improving product yield and extending the service life of the substrate support unit 200. In addition, since the protruding portion 242c is formed at the first bushing 242, the creepage distance of the upper surface of the first bushing 242 increases. In more detail, when the ceramic disk 212 and the first bushing 242 are connected to each other, the contact area between the ceramic disk 212 and the first bushing 242 increases, and thus the connection between the ceramic disk 212 and the first bushing 242 can be enhanced. The first bushing 242 according to an embodiment of the present invention may be made of an insulating material, such as aluminum oxide (Al 2 O 3 However, the embodiment is not limited thereto.

[0071] The second bushing 244 may be disposed at a lower portion of the first bushing 242, and may be coupled to the first bushing 242. In more detail, the second bushing 244 may be coupled to the bottom plate 214 and the first bushing 242 in a state of being inserted into a groove formed in the lower surface of the bottom plate 214. According to an embodiment of the present invention, the second bushing 244 may be formed in an annular shape, and the second bushing 244 and the first bushing 242 may be coupled to each other in an assembly manner. In more detail, the second bushing 244 may be coupled to the outer peripheral surface of the lower region 242a of the first bushing 242 in an assembly manner. Due to this assembly structure, the assembly tolerance between the first bushing 242 and the second bushing 244 is reduced. In addition, since the second bushing 244 does not contact the lifting pin 232, damage to the lifting pin 232 due to the second bushing 244 may be prevented. The second bushing 244 according to an embodiment of the present invention may be made of an insulating material, such as alumina (Al 2 O 3 However, the embodiment is not limited thereto.

[0072] The adhesive layer 246 may be formed to bond the first bushing 242 and the second bushing 244 to the substrate supporting unit 200. The adhesive layer 246 may be formed on upper surfaces of the first bushing 242 and the second bushing 244 coupled to the first bushing 242. In more detail, as Figure 4 As shown, the bonding layer 246 may be formed at least on the upper surface of the first bushing 242 on which the protruding portion 242c is formed, on the outer peripheral surface of the upper region 242b of the first bushing 242, and on the upper surface of the second bushing 244. The first bushing 242 may be bonded to the ceramic disk 212 and the bottom plate 214 mainly by the portion of the bonding layer 246 formed on the upper surface of the first bushing 242 and on the outer peripheral surface of the upper region 242b of the first bushing 242, and the second bushing 244 may be bonded to the bottom plate 214 by the portion of the bonding layer 246 formed on the upper surface of the second bushing 244. The bonding layer 246 according to an embodiment of the present invention may be made of silicon, but the embodiment is not limited thereto. In addition, in an embodiment of the present invention, although the bonding layer 216 and the bonding layer 246 of the substrate support unit 200 are described as being provided separately from each other, the embodiment is not limited thereto. In the example, the bonding layer 216 provided in the substrate support unit 200 may be used as the bonding layer 246.

[0073] As described above, since the bushing 240 including the first bushing 242 and the second bushing 244 is provided in the substrate supporting unit 200, and the protruding portion 242c is formed at the upper portion of the first bushing 242, the assembly tolerance between the substrate supporting unit 200 and the bushing 240 can be reduced. In more detail, since the protruding portion 242c is formed at the upper portion of the first bushing 242, and the concave portion 212c corresponding to the protruding portion 242c of the first bushing 242 is formed in the ceramic disk 212, the first bushing 242 and the ceramic disk 212 can be bonded to each other without being misaligned with each other. Therefore, the assembly tolerance is not generated between the first bushing 242 and the ceramic disk 212, and thus the plasma does not enter the assembly tolerance portion, thereby not generating particles. Therefore, the product yield can be improved. Furthermore, due to the protrusion 242c formed at the first bushing 242, the cross-sectional length of the first bushing 242 increases, and thus the bonding area between the ceramic disk 212 and the first bushing 242 increases, thereby enhancing the coupling between the ceramic disk 212 and the first bushing 242.

[0074] In addition, due to the structure of the bushing 240 in which the second bushing 244 is not exposed to the pin hole 220 and only the first bushing 242 is exposed to the pin hole 220, the possibility of the lift pin 232 being damaged due to the assembly tolerance between the first bushing 242 and the second bushing 244 can be prevented. Figure 1 In the bushing structure shown, since the assembly interface between the first bushing 242 and the second bushing 244 is exposed to the pin hole 220, the edge of the first bushing 242 or the second bushing 244 may protrude to the pin hole 220 at the assembly interface according to the assembly tolerance between the first bushing 242 and the second bushing 244. This protruding edge of the first bushing 242 or the second bushing 244 may cause damage to the lift pin 232 that rises and falls through the pin hole 220. In contrast, according to the present invention, since the second bushing 244 is not exposed to the pin hole 220, and only the inner surface of the first bushing 242 is exposed to the pin hole 220, the possibility of damage to the lift pin 232 can be prevented.

[0075] As is apparent from the above description, according to the present invention, the bushing is composed of a first bushing and a second bushing, and the protrusion is formed at the first bushing, whereby an assembly tolerance can be reduced when the ceramic disk of the substrate supporting unit and the bushing are bonded to each other.

[0076] Furthermore, since the first bushing having the protruding portion and the ceramic disk of the substrate supporting unit are bonded to each other, a bonding area may be increased, and thus coupling between the bushing and the ceramic disk may be enhanced.

[0077] Effects achievable by the present invention are not limited to the above-mentioned effects, and other effects not mentioned herein will be clearly understood by those skilled in the art from the above description.

[0078] Those skilled in the art will appreciate that various changes may be made in form and detail without departing from the basic characteristics of the invention as set forth herein. Therefore, the above detailed description should not be construed as limiting the invention in all respects, but should be considered by way of example. The scope of the invention should be determined by a reasonable interpretation of the appended claims, and all equivalent modifications made without departing from the invention should be included in the following claims.

Claims

1. A substrate supporting unit for supporting a substrate, the substrate supporting unit comprising at least one pin hole formed to vertically penetrate the substrate supporting unit and accommodate a lifting pin in the at least one pin hole to allow the lifting pin to rise and fall through the at least one pin hole, the substrate supporting unit comprising: a ceramic disk configured to allow the substrate to be seated on the ceramic disk; a bottom plate configured to support the ceramic disk; An adhesive layer, the adhesive layer being used for connecting the ceramic disk and the bottom plate; as well as a bushing disposed around the at least one pin hole, The bushing comprises: a first bushing, the first bushing being in a tubular shape; as well as a second bushing coupled to an outer peripheral surface of the first bushing, and The first bushing includes a protruding portion formed on an upper surface of the first bushing. 2 . The substrate supporting unit of claim 1 , wherein the protruding portion protrudes from an upper surface of the first bushing to a predetermined height in a longitudinal direction of the first bushing and is coupled to a concave portion formed in a lower surface of the ceramic disk. 3 . The substrate supporting unit of claim 1 , further comprising an adhesive layer for coupling the bushing to the substrate supporting unit. 4 . The substrate supporting unit according to claim 1 , further comprising a coating layer formed between the adhesive layer and the bottom plate. 5 . The substrate supporting unit of claim 1 , wherein the second bushing is coupled to the bottom plate and the first bushing in a state of being inserted into a groove formed in the bottom plate. The substrate supporting unit of claim 1 , wherein the second bushing is not exposed to the at least one pin hole.

7. The substrate supporting unit according to claim 1, wherein the first bushing includes a lower region and an upper region formed on the lower region, and The second bushing is coupled to the lower region of the first bushing in an assembled manner. 8 . The substrate supporting unit of claim 3 , wherein the adhesive layer is formed on an upper surface of the first bushing, an outer peripheral surface of the first bushing, and an upper surface of the second bushing coupled to the first bushing.

9. A substrate processing device, comprising: a chamber including a processing space defined therein; a substrate supporting unit disposed in the processing space to support a substrate, the substrate supporting unit comprising at least one pin hole formed to vertically penetrate the substrate supporting unit and to accommodate a lift pin in the at least one pin hole to allow the lift pin to ascend and descend through the at least one pin hole: a gas supply unit configured to supply gas to the processing space; a plasma generating unit configured to convert the supplied gas into plasma; as well as a controller configured to control the gas supply unit and the plasma generating unit, The substrate supporting unit comprises: a ceramic disk configured to allow the substrate to be seated on the ceramic disk; a bottom plate configured to support the ceramic disk; an adhesive layer, the adhesive layer being used for coupling between the ceramic disk and the base plate; and a bushing disposed around the at least one pin hole, The bushing comprises: a first bushing, the first bushing being in a tubular shape; and a second bushing coupled to an outer peripheral surface of the first bushing, and The first bushing includes a protruding portion formed on an upper surface of the first bushing. 10 . The substrate processing apparatus of claim 9 , wherein the protrusion portion protrudes from an upper surface of the first bushing to a predetermined height in a longitudinal direction of the first bushing and is coupled to a concave portion formed in a lower surface of the ceramic disk. 11 . The substrate treating apparatus of claim 9 , wherein the substrate supporting unit further comprises an adhesive layer for coupling the bushing to the substrate supporting unit. 12 . The substrate processing apparatus of claim 9 , further comprising a coating layer formed between the adhesive layer and the base plate. 13 . The substrate processing apparatus of claim 9 , wherein the second bushing is coupled to the base plate and the first bushing in a state of being inserted into a groove formed in the base plate. 14 . The substrate processing apparatus of claim 9 , wherein the second bushing is not exposed to the at least one pin hole. 15 . The substrate processing apparatus of claim 11 , wherein the adhesive layer is formed on an upper surface of the first bushing, an outer peripheral surface of the first bushing, and an upper surface of the second bushing coupled to the first bushing.

16. A substrate processing device, comprising: a chamber including a processing space defined therein; a substrate supporting unit disposed in the processing space to support a substrate, the substrate supporting unit comprising at least one pin hole formed to vertically penetrate the substrate supporting unit and to accommodate an elevating pin in the at least one pin hole to allow the elevating pin to ascend and descend through the at least one pin hole; a gas supply unit configured to supply gas to the processing space; a plasma generating unit configured to convert the supplied gas into plasma; as well as a controller configured to control the gas supply unit and the plasma generating unit, The substrate supporting unit comprises: a ceramic disk configured to allow the substrate to be seated on the ceramic disk; a bottom plate configured to support the ceramic disk; an adhesive layer, the adhesive layer being used for coupling between the ceramic disk and the base plate; and a bushing disposed around the at least one pin hole, The bushing comprises: a first bushing, the first bushing being in a tubular shape, the first bushing being coupled to the ceramic disk, the adhesive layer, and the base plate; and a second bushing coupled to an outer peripheral surface of the first bushing and the bottom plate, The first bushing comprises: Lower area; an upper region formed on the lower region; and a protrusion formed on an upper surface of the upper region, and The first bushing is integrally coupled to the ceramic disk in such a manner that the protruding portion is inserted into a recessed portion formed in a lower surface of the ceramic disk. 17 . The substrate treating apparatus of claim 16 , wherein the substrate supporting unit further comprises an adhesive layer for coupling the bushing to the substrate supporting unit. 18 . The substrate processing apparatus of claim 16 , further comprising a coating layer formed between the adhesive layer and the base plate. 19 . The substrate processing apparatus of claim 16 , wherein the second bushing is coupled to the base plate and the first bushing in a state of being inserted into a groove formed in the base plate. 20 . The substrate treating apparatus of claim 19 , wherein the second bushing has an annular shape, and is coupled to an outer peripheral surface of the lower region of the first bushing in a fitting manner.

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