Substrate structure, intelligent power module, controller, electric appliance and substrate manufacturing method

Abstract

The invention discloses a substrate structure, an intelligent power module, a controller, an electric appliance and a substrate manufacturing method, and relates to the technical field of semiconductors. The chip mounting structure comprises a ceramic copper-clad substrate and a plurality of connecting cylinders, wherein at least two chip mounting areas are arranged on the ceramic copper-clad substrate. The joining cylinders are fixedly connected to the ceramic copper-clad substrate, surround each upper core area, and are electrically connected with the middle area of the bonding wire. Therefore, the connecting column body can be used as a middle connecting point of the bonding wire, the bonding wire can be bent to form a plurality of wire segments in the electrical connection process to reduce cross contact between the bonding wires under the condition that a new chip is added, the problem that the bonding wire collapses due to an overlong wire arc and is in contact with other bonding wires is solved, and the bonding wire quality is improved. The structure compatibility of the substrate structure of the intelligent power module is improved, the production cost of the intelligent power module during product iteration is reduced, and the research and development period is shortened.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a substrate structure, an intelligent power module, a controller, an electrical appliance and a substrate manufacturing method. Background Art

[0002] Intelligent Power Module (IPM) is a power drive product that combines power electronics and integrated circuit technology. It is mainly used to control and drive high-power electronic devices, such as AC motor drivers, frequency converters, inverters, etc. For example, the IPM module can convert rectified and filtered DC power into three-phase power with adjustable frequency, and change the speed of the motor by changing the frequency of the output current.

[0003] IPM modules generally require the use of welding wires to electrically interconnect internal electrical connection devices. During the electrical interconnection process, cross-contact and excessive arc length of the welding wires must be avoided. Cross-contact can cause short circuits and damage to the IPM module, and excessive arc lengths can easily increase the risk of wire contact at adjacent locations. In order to avoid the above problems, current IPM modules generally design copper-clad ceramic substrates based on the number and structure of driver chips and power chips. However, when adding new driver chips or power chips, the copper-clad ceramic substrate of the IPM module needs to be redesigned, which increases the production cost of the IPM module and increases the R&D cycle. Summary of the invention

[0004] In view of the problem that the copper-clad ceramic substrate of the current IPM module has a unique design and needs to be redesigned during product iterations to increase the R&D cycle and production costs, the present invention is proposed to provide a substrate structure, an intelligent power module, a controller, an electrical appliance and a substrate manufacturing method that overcome the above problems or at least partially solve the above problems.

[0005] According to the first aspect of the present invention, a substrate structure is provided, the substrate structure comprising:

[0006] A ceramic copper-clad substrate, wherein at least two upper core areas are arranged on the ceramic copper-clad substrate;

[0007] A plurality of connecting pillars are fixedly connected to the ceramic copper-clad substrate, and the plurality of connecting pillars surround each of the upper core regions, and the connecting pillars are electrically connected to the middle region of the bonding wire.

[0008] An optional invention content is to form a plurality of connecting columns around the same upper core area and distribute them at equal intervals.

[0009] An optional invention content is that among the multiple connecting columns surrounding the same upper core area, the distance between two adjacent connecting columns is set within 0.3 mm to 0.4 mm.

[0010] According to an optional invention, a plurality of connecting columns completely surround the upper core area.

[0011] In an optional aspect of the invention, the height of the connecting column extending upward along the surface of the ceramic copper clad substrate is set within a range of 0.3 mm to 0.4 mm.

[0012] In an optional invention, the connecting column further includes a body and a conductive layer, the conductive layer covers the outer surface of the body, and the bonding wire is bonded to the conductive layer.

[0013] An optional invention content is that the main body and the ceramic copper-clad substrate are an integrated structure.

[0014] Based on the second aspect of the present invention, an intelligent power module is provided. The intelligent power module comprises a substrate structure as described in any one of the above invention contents.

[0015] Based on the third aspect of the present invention, a controller is further provided, the controller comprising the intelligent power module as described in the above invention.

[0016] Based on the fourth aspect of the present invention, a household appliance is further provided, the household appliance comprising the controller as described in the above invention.

[0017] Based on the fifth aspect of the present invention, a control method of an intelligent power module is also provided, and the substrate manufacturing method comprises:

[0018] Providing ceramic slurry, and coating the ceramic slurry on a selective light-transmitting film platform, and pressing the sample platform down to expose the ceramic slurry, so that the cured ceramic slurry adheres to the sample platform, to obtain a layer of substrate embryo;

[0019] Repeatedly coating the ceramic slurry on the selective light-transmitting film platform, and after each coating of the ceramic slurry, pressing down the sample stage to expose the ceramic slurry, so that the cured ceramic slurry adheres to the cured substrate embryo on the sample stage, to obtain a multi-layer substrate embryo, wherein at least two upper core regions are arranged on the multi-layer substrate embryo, and a plurality of connecting columns are extended on the multi-layer substrate embryo, and the plurality of connecting columns surround each of the upper core regions;

[0020] calcining the multi-layer substrate green body, and sintering the calcined multi-layer substrate green body to obtain a ceramic substrate;

[0021] The ceramic substrate is copper-clad to obtain a substrate structure.

[0022] In an optional invention, the substrate manufacturing method further comprises:

[0023] Anhydrous ethanol, ceramic powder and photosensitive resin are mixed to obtain the ceramic slurry.

[0024] Compared with the prior art, the present invention includes a ceramic copper-clad substrate and a plurality of connecting columns, and at least two upper core areas are arranged on the ceramic copper-clad substrate. The connecting columns are fixedly connected to the ceramic copper-clad substrate, and the plurality of connecting columns surround each of the upper core areas, and the connecting columns are electrically connected to the middle area of ​​the bonding wire. Therefore, the connecting columns can be used as the middle connection points of the bonding wires. In the case of adding new chips, the bonding wires can be bent to form multiple segments during the electrical connection process to reduce the cross-contact between the bonding wires, and avoid the problem of the bonding wires collapsing and contacting with other bonding wires due to the excessive length of the wire arc, thereby improving the structural compatibility of the substrate structure of the intelligent power module, reducing the production cost of the intelligent power module during product iteration, and shortening the research and development cycle.

[0025] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention, it can be implemented according to the contents of the specification. In order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] By reading the detailed description of the preferred embodiment below, various other advantages and benefits will become clear to those of ordinary skill in the art. The accompanying drawings are only used for the purpose of illustrating the preferred embodiment and are not considered to be limitations of the present invention. In addition, the same reference symbols are used to represent the same components throughout the accompanying drawings.

[0027] In the attached picture:

[0028] Figure 1 is a structural schematic diagram of a substrate structure provided by an embodiment of the present invention;

[0029] Figure 2 is a structural schematic diagram of an intelligent power module provided by an embodiment of the present invention;

[0030] Figure 3 is a flowchart of a method for manufacturing a substrate structure provided by an embodiment of the present invention;

[0031] Figure 4 is a structural schematic diagram of a ceramic substrate provided by an embodiment of the present invention;

[0032] Figure 5 is a structural schematic diagram of a light curing machine provided by an embodiment of the present invention;

[0033] Figure 6 is a structural schematic diagram of a mask plate provided by an embodiment of the present invention;

[0034] Figure numerals: 1. Ceramic copper-clad substrate; 101. Upper core area; 102. Ceramic substrate; 2. Connecting column; 21. Main body; 22. Conductive layer; 3. Bonding wire; 4. Driver chip; 5. Power chip; 6. Lead frame; 7. Sample stage; 8. Selective light-transmitting film platform; 9. Multi-layer substrate embryo; 10. Reflector; 11. Mask plate. DETAILED DESCRIPTION

[0035] The exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present invention and to enable the scope of the present invention to be fully communicated to those skilled in the art.

[0036] Intelligent Power Module (IPM) is a power drive product that combines power electronics and integrated circuit technology. It is mainly used to control and drive high-power electronic devices, such as AC motor drivers, frequency converters, inverters, etc. For example, the IPM module can convert rectified and filtered DC power into three-phase power with adjustable frequency, and change the speed of the motor by changing the frequency of the output current.

[0037] IPM modules generally require the use of welding wires to electrically interconnect internal electrical connection devices. During the electrical interconnection process, cross-contact and excessive arc length of the welding wires must be avoided. Cross-contact can cause short circuits and damage to the IPM module, and excessive arc lengths can easily increase the risk of wire contact at adjacent locations. In order to avoid the above problems, current IPM modules generally design copper-clad ceramic substrates based on the number and structure of driver chips and power chips. However, when adding new driver chips or power chips, the copper-clad ceramic substrate of the IPM module needs to be redesigned, which increases the production cost of the IPM module and increases the R&D cycle.

[0038] Based on the above technical problems, an embodiment of the present invention is proposed. The embodiment of the present invention may include a ceramic copper-clad substrate 1 and a plurality of connecting columns 2, and at least two upper core areas 101 are arranged on the ceramic copper-clad substrate 1. The connecting columns 2 are fixedly connected to the ceramic copper-clad substrate 1, and the plurality of connecting columns 2 surround each of the upper core areas 101, and the connecting columns 2 are electrically connected to the middle area of ​​the bonding wire 3. Therefore, the connecting columns 2 can be used as the middle connection point of the bonding wire 3. In the case of adding a new chip, the bonding wire 3 can be bent to form multiple segments during the electrical connection process to reduce the cross contact between the bonding wires 3, and avoid the problem of the bonding wire 3 collapsing due to the long arc and contacting with other bonding wires 3, thereby improving the structural compatibility of the substrate structure of the intelligent power module, reducing the production cost of the intelligent power module during product iteration, and shortening the research and development cycle.

[0039] Reference Figure 1 and Figure 2 As shown, an embodiment of the present invention provides a substrate structure, which includes a ceramic copper-clad substrate 1 and a plurality of connecting pillars 2, and at least two upper core areas 101 are provided on the ceramic copper-clad substrate 1. The connecting pillars 2 are fixedly connected to the ceramic copper-clad substrate 1, and the plurality of connecting pillars 2 surround each of the upper core areas 101, and the connecting pillars 2 are electrically connected to the middle area of ​​the bonding wire 3.

[0040] In an embodiment of the present invention, the substrate structure may include a ceramic copper-clad substrate 1 and a plurality of connecting columns 2. The ceramic copper-clad substrate 1 may be understood as a substrate structure obtained by metallizing the surface of a ceramic substrate 102. At least two upper core areas 101 are provided on the ceramic copper-clad substrate 1. At least one of the upper core areas 101 is used to install a driver chip 4 of the intelligent power module, and at least one of the upper core areas 101 is used to install a power chip 5 of the intelligent power module. The driver chip 4 is used to convert a signal input to the intelligent power module into a control signal suitable for a power device. The power chip 5 is responsible for the part of power conversion and power output.

[0041] The connecting pillars 2 are fixedly connected to the ceramic copper-clad substrate 1, and a plurality of the connecting pillars 2 surround each of the upper core regions 101. In other words, a large number of connecting pillars 2 are arranged around the upper core region 101, so that the connecting pillars 2 can be used as the middle connecting points of the bonding wires 3. Therefore, when connecting the electrical connection device in the intelligent power module, one end of the bonding wire 3 can be connected to the chip, and the middle area of ​​the bonding wire 3 can be electrically connected to the connecting pillars 2.

[0042] For example, when the driver chip 4QD1 is electrically connected to the power chip 5GL1, one end of the bonding wire 3A can be electrically connected to the driver chip 4QD1, and the other end of the bonding wire 3A can be electrically connected to the power chip 5GL1. The middle node A1 of the bonding wire 3A can be electrically connected to one of the connecting pillars 2 surrounding the driver chip 4QD1, and the middle node A2 of the bonding wire 3A can be electrically connected to one of the connecting pillars 2 surrounding the power chip 5GL1.

[0043] For another example, when the power chip 5GL1 is electrically connected to the lead frame 6Y1 of the intelligent power module, one end of the bonding wire 3B can be electrically connected to the driver chip 4QD1, and the other end of the bonding wire 3B can be electrically connected to the lead frame 6Y1. The middle node B1 of the bonding wire 3B can be electrically connected to one of the connecting pillars 2 surrounding the driver chip 4QD1, and the middle node B2 of the bonding wire 3B can be electrically connected to one of the connecting pillars 2 surrounding the lead frame 6Y1.

[0044] Therefore, in the case of adding a new chip, the bonding wire 3 can form multiple curved segments during the electrical connection process to reduce the cross contact between the bonding wires 3 and avoid the problem of the bonding wire 3 collapsing due to the excessive arc length and contacting other bonding wires 3. The arc length refers to the total length of the bonding wire 3. When the arc length is too long, the bonding wire 3 is easily impacted during the injection molding of the intelligent power module. Under the impact force, the contact risk of the two bonding wires 3 with the arc length too long to form a collapsed wire is increased.

[0045] When a new power chip 5GL2 is added, the upper core area 101 corresponding to the power chip 5GL2 can be determined on the ceramic copper-clad substrate 1 of the original intelligent power module, and then the middle area of ​​the bonding wire 3 is used to perform transition connection on different connecting pillars 2 to avoid cross contact of the bonding wire 3 or excessive arc when electrically connected. The present invention improves the structural compatibility of the substrate structure of the intelligent power module by providing the connecting pillar 2, reduces the production cost of the intelligent power module during product iteration, and shortens the research and development cycle.

[0046] An optional embodiment of the invention, referring to Figure 1 , Figure 2 as well as Figure 4 As shown, a plurality of connecting columns 2 are formed around the same upper core area 101 and are distributed at equal intervals.

[0047] In the embodiment of the present invention, in order to improve the distribution uniformity and processing convenience of the connecting columns 2 formed around the upper core area 101, the intervals between every two adjacent connecting columns 2 in the multiple connecting columns 2 surrounding the same upper core area 101 are the same.

[0048] In some optional embodiments of the invention, among the plurality of connecting columns 2 surrounding the same upper core area 101, the distance between two adjacent connecting columns 2 is set within 0.3 mm to 0.4 mm.

[0049] In the embodiment of the present invention, for the plurality of connecting pillars 2 surrounding the same upper core area 101, the distance between two adjacent connecting pillars 2 in each group can be set between 0.3 mm and 0.4 mm. Among them, those skilled in the art can determine the distance between two adjacent connecting pillars 2 according to actual design requirements, for example, the distance can be set to 0.3 mm. For another example, the distance can be set to 0.35 mm, and for another example, the distance can be set to 0.4 mm, etc., which are not limited here.

[0050] By limiting the distance between the two connecting pillars 2 at adjacent positions, on the one hand, it is possible to improve the processing convenience of the connecting pillars 2 (for example, when the distance is less than 0.3 mm, the corresponding process difficulty will be further increased). On the other hand, the number of connecting pillars 2 distributed around the upper core area 101 can be increased. By densely distributing a plurality of connecting pillars 2 around the upper core area 101, when a large number of bonding wires 3 are required to realize the electrical connection between the current chip and other electrically connected devices (such as chips and lead frames 6 and other devices), it is convenient to arrange and route a plurality of bonding wires 3. This can facilitate the iteration of highly integrated products of the intelligent power module and further improve the structural compatibility of the substrate structure.

[0051] An optional embodiment of the invention, referring to Figure 1 , Figure 2 as well as Figure 4 As shown, a plurality of connecting columns 2 completely surround the upper core area 101 .

[0052] In the embodiment of the present invention, in order to facilitate the chips in the upper core area 101 to form electrical connections with other electrical connection devices in different directions through the bonding wires 3, the plurality of connecting pillars 2 completely surround the upper core area 101. In other words, all edges of the upper core area 101 are provided with the connecting pillars 2 in an array.

[0053] An optional embodiment of the invention, referring to Figure 1 and Figure 2As shown, the substrate structure may include a ceramic copper-clad substrate 1 and a plurality of connecting pillars 2, and at least two upper core areas 101 are provided on the ceramic copper-clad substrate 1. The connecting pillars 2 are fixedly connected to the ceramic copper-clad substrate 1, and the plurality of connecting pillars 2 surround each of the upper core areas 101, and the connecting pillars 2 are electrically connected to the middle area of ​​the bonding wire 3. The height of the connecting pillars 2 extending upward along the surface of the ceramic copper-clad substrate 1 is set within 0.3 mm to 0.4 mm.

[0054] In an embodiment of the present invention, the substrate structure may include a ceramic copper-clad substrate 1 and a plurality of connecting columns 2. The ceramic copper-clad substrate 1 may be understood as a substrate structure obtained by metallizing the surface of a ceramic substrate 102. At least two upper core areas 101 are provided on the ceramic copper-clad substrate 1. At least one of the upper core areas 101 is used to install a driver chip 4 of the intelligent power module, and at least one of the upper core areas 101 is used to install a power chip 5 of the intelligent power module. The driver chip 4 is used to convert a signal input to the intelligent power module into a control signal suitable for a power device. The power chip 5 is responsible for the part of power conversion and power output.

[0055] The connecting pillars 2 are fixedly connected to the ceramic copper-clad substrate 1, and a plurality of the connecting pillars 2 surround each of the upper core regions 101. In other words, a large number of connecting pillars 2 are arranged around the upper core region 101, so that the connecting pillars 2 can be used as the middle connecting points of the bonding wires 3. Therefore, when connecting the electrical connection devices in the intelligent power module, one end of the bonding wire 3 can be connected to the chip, and the middle region of the bonding wire 3 can be electrically connected to the connecting pillars 2.

[0056] The height of the connecting column 2 extending upward along the surface of the ceramic copper-clad substrate 1 is set within 0.3 mm to 0.4 mm. In other words, the height H of the connecting column 2 protruding from the surface of the ceramic copper-clad substrate 1 is within 0.3 mm to 0.4 mm. For example, the height H of the connecting column 2 extending upward along the surface of the ceramic copper-clad substrate 1 can be set to 0.3 mm. For another example, the height H of the connecting column 2 extending upward along the surface of the ceramic copper-clad substrate 1 can be set to 0.35 mm. For another example, the height H of the connecting column 2 extending upward along the surface of the ceramic copper-clad substrate 1 can be set to 0.4 mm, which is not too limited here. In the case of the above-mentioned height limit range, the processing convenience of the connecting column 2 can be improved, and the chip thickness of the upper core area 101 can be adapted by this height to avoid the obvious difference in thickness between the connecting column 2 and the chip, which leads to a reduction in the electrical connection stability of the bonding wire 3.

[0057] In some embodiments, when the driver chip 4QD1 is electrically connected to the power chip 5GL1, one end of the bonding wire 3A can be electrically connected to the driver chip 4QD1, and the other end of the bonding wire 3A can be electrically connected to the power chip 5GL1. The middle node A1 of the bonding wire 3A can be electrically connected to one of the connecting pillars 2 surrounding the driver chip 4QD1, and the middle node A2 of the bonding wire 3A can be electrically connected to one of the connecting pillars 2 surrounding the power chip 5GL1.

[0058] In other embodiments, when the power chip 5GL1 is electrically connected to the lead frame 6Y1 of the intelligent power module, one end of the bonding wire 3B can be electrically connected to the driver chip 4QD1, and the other end of the bonding wire 3B can be electrically connected to the lead frame 6Y1. The middle node B1 of the bonding wire 3B can be electrically connected to one of the connecting pillars 2 surrounding the driver chip 4QD1, and the middle node B2 of the bonding wire 3B can be electrically connected to one of the connecting pillars 2 surrounding the lead frame 6Y1.

[0059] Therefore, in the case of adding a new chip, the bonding wire 3 can form multiple curved segments during the electrical connection process to reduce the cross contact between the bonding wires 3 and avoid the problem of the bonding wire 3 collapsing due to the excessive arc length and contacting other bonding wires 3. The arc length refers to the total length of the bonding wire 3. When the arc length is too long, the bonding wire 3 is easily impacted during the injection molding of the intelligent power module. Under the impact force, the contact risk of the two bonding wires 3 with the arc length too long to form a collapsed wire is increased.

[0060] When a new power chip 5GL2 is added, the upper core area 101 corresponding to the power chip 5GL2 can be determined on the ceramic copper-clad substrate 1 of the original intelligent power module, and then the middle area of ​​the bonding wire 3 is used to perform transition connection on different connecting pillars 2 to avoid cross contact of the bonding wire 3 or excessive arc when electrically connected. The present invention improves the structural compatibility of the substrate structure of the intelligent power module by providing the connecting pillar 2, reduces the production cost of the intelligent power module during product iteration, and shortens the research and development cycle.

[0061] An optional embodiment of the invention, referring to Figure 1 and Figure 2 As shown, the connecting column 2 further includes a body 21 and a conductive layer 22 . The conductive layer 22 covers the outer surface of the body 21 , and the bonding wire 3 is bonded to the conductive layer 22 .

[0062] In the embodiment of the present invention, the connecting column 2 may further include a body 21 and a conductive layer 22, wherein the body 21 may be fixed on the ceramic copper-clad substrate 1, and the conductive layer 22 may cover the outer surface of the body 21, thereby, the bonding wire 3 may be electrically connected to the conductive layer 22 on the top of the body 21 through a wire bonding process. The conductive layer 22 and the ceramic insulating substrate have a certain interval, and are electrically insulated by the body 21. In some embodiments, the bonding wire 3 may be a copper wire, and correspondingly, the conductive layer 22 may be a copper layer.

[0063] In some implementations, the conductive layer 22 may be formed on the outer surface of the body 21 by using a copper electroplating process.

[0064] An optional embodiment of the invention, referring to Figure 4 As shown, the body 21 and the ceramic copper clad substrate 1 are an integrated structure.

[0065] In the embodiment of the present invention, in order to improve the processing convenience of the substrate structure and reduce the production cost, the body 21 and the ceramic copper-clad substrate 1 can be an integrated structure, that is, the body 21 and the ceramic copper-clad substrate 1 are processed by an integrated molding process. For example, the body 21 can be made of one of the following materials: aluminum oxide and silicon oxide.

[0066] In an optional embodiment of the invention, the cross-sectional shape of the connecting column 2 includes one of the following: rectangular and circular.

[0067] In the embodiment of the present invention, the cross-sectional shape of the connecting column 2 is circular, that is, the connecting column 2 can be a cylindrical structure. In another example, the cross-sectional shape of the connecting column 2 can be rectangular, that is, the connecting column 2 can be a cuboid structure or a cube structure. The connecting column 2 of a regular shape can facilitate the processing of the substrate structure and the control of the interval between two connecting columns 2 in adjacent positions.

[0068] As a preferred embodiment, the connecting column 2 may be a cubic structure. For example, the connecting column 2 may extend upwardly along the surface of the ceramic copper-clad substrate 1 to a height of 0.3 mm, and the cross-sectional shape of the connecting column 2 may be a square with a side length of 0.3 mm.

[0069] In summary, the embodiment of the present invention discloses a substrate structure, which may include a ceramic copper-clad substrate 1 and a plurality of connecting columns 2, and at least two upper core areas 101 are provided on the ceramic copper-clad substrate 1. The connecting columns 2 are fixedly connected to the ceramic copper-clad substrate 1, and the plurality of connecting columns 2 surround each of the upper core areas 101, and the connecting columns 2 are electrically connected to the middle area of ​​the bonding wire 3. Therefore, the connecting columns 2 can be used as the middle connection point of the bonding wire 3. In the case of adding a new chip, the bonding wire 3 can be bent to form multiple segments during the electrical connection process to reduce the cross contact between the bonding wires 3, and avoid the problem of the bonding wire 3 collapsing due to the long arc and contacting with other bonding wires 3, thereby improving the structural compatibility of the substrate structure of the intelligent power module, reducing the production cost of the intelligent power module during product iteration, and shortening the research and development cycle.

[0070] Reference Figure 2 As shown, an embodiment of the present invention further discloses an intelligent power module, and the intelligent power module may include a substrate structure as described in any one of the above-mentioned embodiments of the invention.

[0071] In an embodiment of the present invention, the intelligent power module may further include a driving chip 4, a power chip 5, a bonding wire 3, a lead frame 6 and other structures, wherein the driving chip 4 and the power chip 5 may be installed in the upper core area 101. In some embodiments, the driving chip 4 may be fixed in the upper core area 101 by welding or bonding, and the power chip 5 may be fixed in the upper core area 101 by welding or bonding. The driving chip 4 and the power chip 5, the driving chip 4 and the lead frame 6, and the power chip 5 and the lead frame 6 may be bonded by bonding wires 3, respectively. During the bonding process, the middle area of ​​the bonding wire 3 may be electrically connected to the corresponding connecting column 2, which is used to form a bending path of the bonding wire 3, or to reduce the risk of wire collapse caused by an excessively long arc of the bonding wire 3.

[0072] After completing the electrical connection of all intelligent power modules, the intelligent power module may further include a plastic package, which may be obtained by injection molding the electrical connection device with a plastic package. The plastic package may include epoxy resin material, etc. After the plastic package is injection molded and cured, a plastic package covering the top of the ceramic substrate 102 is formed, and the plastic package wraps the lead frame 6, the power chip 5, the driver chip 4, the connecting column 2 and the bonding wire 3 to achieve electrical insulation of the intelligent power module, thereby obtaining a manufactured intelligent power module.

[0073] The embodiment of the present invention further discloses a controller, which includes the intelligent power module as described in the above embodiment of the invention.

[0074] An embodiment of the present invention further discloses a household appliance, which includes the controller as described in the above embodiment of the invention.

[0075] In the embodiment of the present invention, the household appliances may include but are not limited to air conditioners, air purifiers, washing machines, refrigerators, fans, vacuum cleaners, etc.

[0076] In summary, the embodiment of the present invention discloses a substrate structure, an intelligent power module, a controller and a household appliance. The embodiment of the present invention may include a ceramic copper-clad substrate 1 and a plurality of connecting columns 2, and at least two upper core areas 101 are provided on the ceramic copper-clad substrate 1. The connecting columns 2 are fixedly connected to the ceramic copper-clad substrate 1, and the plurality of connecting columns 2 surround each of the upper core areas 101, and the connecting columns 2 are electrically connected to the middle area of ​​the bonding wire 3. Therefore, the connecting columns 2 can be used as the middle connection point of the bonding wire 3. In the case of adding a new chip, the bonding wire 3 can be bent to form multiple segments during the electrical connection process to reduce the cross contact between the bonding wires 3, and avoid the problem of the bonding wire 3 collapsing due to the long arc and contacting with other bonding wires 3, thereby improving the structural compatibility of the substrate structure of the intelligent power module, reducing the production cost of the intelligent power module during product iteration and shortening the research and development cycle.

[0077] Reference Figure 3 As shown, the embodiment of the present invention further discloses a method for manufacturing a substrate structure, and the substrate manufacturing method may include:

[0078] S301, providing ceramic slurry, and coating the ceramic slurry on a selective light-transmitting film platform, and pressing the sample platform down to expose the ceramic slurry, so that the cured ceramic slurry adheres to the sample platform, to obtain a layer of substrate embryo.

[0079] In an embodiment of the present invention, the ceramic slurry refers to a mixed slurry comprising at least ceramic powder, anhydrous ethanol and a photosensitive resin. For example, the anhydrous ethanol, alumina ceramic powder and a photosensitive resin can be mixed in a certain proportion to obtain the ceramic slurry. The photosensitive resin is mainly used to cure the ceramic slurry in a subsequent photocuring process. The anhydrous ethanol is a dispersion medium, so that when the alumina ceramic powder and the photosensitive resin are mixed, they can be fully mixed with the anhydrous ethanol to obtain the ceramic slurry. Among them, the alumina content in the alumina ceramic powder is 99.99% or more.

[0080] In some other optional embodiments, the anhydrous ethanol, silicon oxide ceramic powder and photosensitive resin can be mixed in a certain proportion to obtain the ceramic slurry. The photosensitive resin is mainly used to cure the ceramic slurry in the subsequent photocuring process. The anhydrous ethanol is a dispersion medium, so that when the silicon oxide ceramic powder and the photosensitive resin are mixed, they can be fully mixed by the anhydrous ethanol to obtain the ceramic slurry. Among them, the silicon oxide content in the silicon oxide ceramic powder is 99.99% or more.

[0081] In other optional embodiments, in order to reduce the sintering problem of the subsequent multi-layer substrate embryo 9, the ceramic slurry may also include a sintering aid, etc., so as to ensure that the thermal conductivity of the final copper-clad ceramic substrate 102 is not less than 25W / (m·K) (watt / meter·degree).

[0082] S302, repeatedly coating the ceramic slurry on the selectively light-transmitting film platform, and after each coating of the ceramic slurry, pressing down the sample stage to expose the ceramic slurry, so that the cured ceramic slurry adheres to the cured substrate embryo on the sample stage, to obtain a multi-layer substrate embryo, wherein at least two upper core areas 101 are arranged on the multi-layer substrate embryo, and a plurality of connecting columns 2 are extended on the multi-layer substrate embryo, and the plurality of connecting columns 2 surround each of the upper core areas 101.

[0083] In the embodiment of the present invention, refer to Figure 5 As shown, the photocuring machine may include a selective light-transmitting film platform 8, an ultraviolet lamp, a reflector 10, and a sample stage 7. The selective light-transmitting film platform 8 refers to a workbench provided with a selective light-transmitting film, which may be a selective area light-transmitting technology. The ultraviolet lamp emits a light source, which is reflected by the reflector 10 and projected onto the selective light-transmitting film platform 8 in a vertical direction, so that the photosensitive resin reacts with the ultraviolet light, and the ceramic slurry on the selective light-transmitting film platform 8 is cured.

[0084] The sample stage 7 is pressed down until it contacts the ceramic slurry, so that during the exposure (light source irradiation) process, the cured ceramic slurry can adhere to the sample stage 7 to obtain a layer of substrate embryos. The layer of substrate embryos can be lifted along with the sample stage 7, and during the manufacturing process of the next layer of substrate embryos, the ceramic slurry is repeatedly coated on the selective light-transmitting film platform 8, and the sample stage 7 is repeatedly pressed down to expose the ceramic slurry after each coating of the ceramic slurry, so that the cured ceramic slurry adheres to a layer of substrate embryos, or two layers of substrate embryos, or a multi-layer substrate embryo 9 on the sample stage 7. After the curing is completed, a multi-layer substrate embryo 9 is obtained.

[0085] Before manufacturing the copper-clad ceramic substrate 102, the three-dimensional model of the copper-clad ceramic substrate 102 can be sliced, that is, divided into multiple layers in the thickness direction, so that a photocuring model can be obtained. The photocuring model is imported into a photocuring molding machine. Among them, the preset exposure intensity and preset exposure time of the single-layer substrate embryo can be preset, and layer by layer is cured according to the preset exposure intensity and preset exposure time. Among them, the preset exposure intensity refers to the operating power of the ultraviolet lamp. The preset exposure time refers to the duration of the light source emitted by the ultraviolet lamp. For example, the preset exposure intensity can range from 5 mW / cm3 to 6 mW / cm3, the preset exposure time is between 1.5 microseconds and 3 microseconds, and the curing time after stopping the exposure can be between 2 microseconds and 3 microseconds.

[0086] After obtaining the multi-layer substrate embryo, at least two upper core areas 101 are provided on the current multi-layer substrate embryo, and a plurality of connecting pillars 2 are extended and provided on the multi-layer substrate embryo, and a plurality of connecting pillars 2 surround each of the upper core areas 101. At least one of the upper core areas 101 is used to install the driver chip 4 of the intelligent power module, and at least one of the upper core areas 101 is used to install the power chip 5 of the intelligent power module. The driver chip 4 is used to convert the signal input to the intelligent power module into a control signal suitable for the power device. The power chip 5 is responsible for the part of power conversion and power output.

[0087] The connecting pillars 2 are fixedly connected to the ceramic copper-clad substrate 1, and a plurality of the connecting pillars 2 surround each of the upper core regions 101. In other words, a large number of connecting pillars 2 are arranged around the upper core region 101, so that the connecting pillars 2 can be used as the middle connecting points of the bonding wires 3. Therefore, when connecting the electrical connection devices in the intelligent power module, one end of the bonding wire 3 can be connected to the chip, and the middle region of the bonding wire 3 can be electrically connected to the connecting pillars 2.

[0088] For example, when the driver chip 4QD1 is electrically connected to the power chip 5GL1, one end of the bonding wire 3A can be electrically connected to the driver chip 4QD1, and the other end of the bonding wire 3A can be electrically connected to the power chip 5GL1. The middle node A1 of the bonding wire 3A can be electrically connected to one of the connecting pillars 2 surrounding the driver chip 4QD1, and the middle node A2 of the bonding wire 3A can be electrically connected to one of the connecting pillars 2 surrounding the power chip 5GL1.

[0089] For another example, when the power chip 5GL1 is electrically connected to the lead frame 6Y1 of the intelligent power module, one end of the bonding wire 3B can be electrically connected to the driver chip 4QD1, and the other end of the bonding wire 3B can be electrically connected to the lead frame 6Y1. The middle node B1 of the bonding wire 3B can be electrically connected to one of the connecting pillars 2 surrounding the driver chip 4QD1, and the middle node B2 of the bonding wire 3B can be electrically connected to one of the connecting pillars 2 surrounding the lead frame 6Y1.

[0090] Therefore, in the case of adding a new chip, the bonding wire 3 can form multiple curved segments during the electrical connection process to reduce the cross contact between the bonding wires 3 and avoid the problem of the bonding wire 3 collapsing due to the excessive arc length and contacting other bonding wires 3. The arc length refers to the total length of the bonding wire 3. When the arc length is too long, the bonding wire 3 is easily impacted during the injection molding of the intelligent power module. Under the impact force, the contact risk of the two bonding wires 3 with the arc length too long to form a collapsed wire is increased.

[0091] When a new power chip 5GL2 is added, the upper core area 101 corresponding to the power chip 5GL2 can be determined on the ceramic copper-clad substrate 1 of the original intelligent power module, and then the middle area of ​​the bonding wire 3 is used to perform transition connection on different connecting pillars 2 to avoid cross contact of the bonding wire 3 or excessive arc when electrically connected. The present invention improves the structural compatibility of the substrate structure of the intelligent power module by providing the connecting pillar 2, reduces the production cost of the intelligent power module during product iteration, and shortens the research and development cycle.

[0092] Furthermore, considering that the interval between two connecting columns 2 at adjacent positions is small and the substrate material is relatively brittle, the conventional turning process easily causes the connecting column 2 to break during processing. Therefore, the connecting column 2 and the ceramic substrate 102 of the ceramic copper-clad substrate 1 are integrally formed through the additive manufacturing process, which can improve the processing convenience and structural firmness of the connecting column 2 and greatly reduce the processing defect rate of the connecting column 2.

[0093] S303 , calcining the multi-layer substrate green body, and sintering the calcined multi-layer substrate green body to obtain a ceramic substrate 102 .

[0094] In the embodiment of the present invention, when the multi-layer substrate green body 9 corresponding to the complete ceramic substrate 102 is obtained, the multi-layer substrate green body 9 is calcined, and the calcined multi-layer substrate green body 9 is sintered to obtain the ceramic substrate 102. Figure 4 shown.

[0095] In some optional embodiments, the multi-layer substrate green embryo 9 can be placed in a vacuum degreasing furnace for low-temperature calcination. First, the multi-layer substrate green embryo 9 is heated to a first temperature interval according to a first heating rate, and is kept warm for a first time. Then, the multi-layer substrate green embryo 9, which has been kept warm for the first time, is heated to a second temperature interval according to the first heating rate, and is kept warm for the second time. Then, the multi-layer substrate green embryo 9, which has been kept warm for the second time, is heated to a third temperature interval according to the first heating rate, and is kept warm for the third time. Finally, the multi-layer substrate green embryo 9, which has been kept warm for the third time, is cooled to the second temperature interval according to the first cooling rate and then cooled.

[0096] The first heating rate refers to the preset heating rate for heating the multi-layer substrate embryo 9 during the low-temperature calcination process. For example, the first heating rate may be 1 degree Celsius per minute, i.e., the temperature of the multi-layer substrate embryo 9 is increased by 1 degree Celsius per minute. The first cooling rate refers to the preset cooling rate for cooling the multi-layer substrate embryo 9 during the low-temperature calcination process. For example, the first cooling rate may be 5 degrees Celsius per minute, i.e., the temperature of the multi-layer substrate embryo 9 is reduced by 5 degrees Celsius per minute. In the case where the desired calcination temperature is high, the heating stage may be divided into multiple stages, and a heat preservation stage of the multi-layer substrate embryo 9 may be added between two adjacent heating stages.

[0097] In some embodiments, the first temperature range may be 120-150 degrees Celsius; the second temperature range may be 300-350 degrees Celsius; and the third temperature range may be 600-650 degrees Celsius. The first duration may be between 1-2 hours, and the second duration may be between 1-2 hours. And the third duration may be between 10-15 hours. Those skilled in the art may select the above parameter values ​​according to actual test results, and no further restrictions are made here. After cooling to the second temperature range, it may be cooled to room temperature together with the furnace, and then the high temperature sintering of the multi-layer substrate embryo 9 may be performed.

[0098] First, the calcined multilayer substrate green body 9 is heated to a fourth temperature range at a second heating rate. Then, the multilayer substrate green body 9 heated to the fourth temperature range is further heated to a fifth temperature range at a third heating rate, and is kept warm for a fourth time. Finally, the multilayer substrate green body 9, which has been kept warm for a fourth time, is cooled to the fourth temperature range at a second cooling rate and then cooled.

[0099] In the embodiment of the present invention, the multi-layer substrate embryo 9 can be placed in a muffle furnace for high-temperature sintering. The second heating rate and the third heating rate can be understood as the preset heating rate for heating the multi-layer substrate embryo 9 during the high-temperature sintering process. For example, the second heating rate can be 10 degrees Celsius per minute, that is, the temperature of the multi-layer substrate embryo 9 is increased by 10 degrees Celsius per minute. For another example, the third heating rate can be 5 degrees Celsius per minute, that is, the temperature of the multi-layer substrate embryo 9 is increased by 5 degrees Celsius per minute.

[0100] The second cooling rate refers to the preset cooling rate for cooling the multi-layer substrate green body 9 during the high-temperature sintering process. For example, the second cooling rate may be 5 degrees Celsius per minute, i.e., the temperature of the multi-layer substrate green body 9 is reduced by 5 degrees Celsius per minute. In the case where the desired sintering temperature is relatively high, the heating stage may be divided into multiple stages, and between two adjacent heating stages, a heat preservation stage of the multi-layer substrate green body 9 may be added.

[0101] In some embodiments, the fourth temperature range may be 800-850 degrees Celsius; the fifth temperature range may be 1400-1550 degrees Celsius; and the fourth duration may be between 2-4 hours. Those skilled in the art may select the above parameter values ​​according to actual test results, and no further limitation is made here. After cooling to the fourth temperature range, the furnace may be cooled to room temperature, thereby obtaining the finished ceramic substrate 1021.

[0102] S304 , copper-coating the ceramic substrate 102 to obtain a substrate structure.

[0103] In the embodiment of the present invention, the pre-set mask plate 11 can be covered on the surface of the ceramic substrate 102 by vacuum sputtering technology, referring to Figure 6 As shown, a metal layer, for example, copper metal or molybdenum metal, is deposited on the surface area of ​​the ceramic substrate 102 not covered by the mask plate 11, and copper is electroplated on the surface of the metal layer to finally obtain the substrate structure, that is, the copper-clad ceramic substrate 102 and the connecting column 2 with a conductive layer 22 on the top can be obtained.

[0104] In summary, the embodiment of the present invention discloses a method for manufacturing a substrate structure, which may include first providing a ceramic slurry, and coating the ceramic slurry on a selective light-transmitting film platform, and pressing the sample stage down to expose the ceramic slurry so that the cured ceramic slurry adheres to the sample stage to obtain a layer of substrate embryo. Then, the ceramic slurry is repeatedly coated on the selective light-transmitting film platform, and the sample stage is pressed down to expose the ceramic slurry after each coating of the ceramic slurry, so that the cured ceramic slurry adheres to the cured substrate embryo on the sample stage to obtain a multi-layer substrate embryo. Finally, the multi-layer substrate embryo is calcined, and the calcined multi-layer substrate embryo is sintered to obtain a ceramic substrate 102. The ceramic substrate 102 is copper-clad to obtain a substrate structure.

[0105] Thus, the connecting column 2 of the substrate structure obtained by the above-mentioned manufacturing method can be used as the middle connecting point of the bonding wire 3. In the case of adding a new chip, the bonding wire 3 can be bent to form multiple segments during the electrical connection process to reduce the cross contact between the bonding wires 3, and avoid the problem of the bonding wire 3 collapsing due to the long arc and contacting with other bonding wires 3, thereby improving the structural compatibility of the substrate structure of the intelligent power module, reducing the production cost of the intelligent power module during product iteration and shortening the research and development cycle. In addition, considering that the interval between the two connecting columns 2 at adjacent positions is small and the brittleness of the substrate material is large, the traditional turning process is easy to cause the connecting column 2 to break during the processing. Therefore, the connecting column 2 and the ceramic substrate 102 of the ceramic copper-clad substrate 1 are integrally formed through the additive manufacturing process, which can improve the processing convenience and structural firmness of the connecting column 2, and greatly reduce the processing defect rate of the connecting column 2.

[0106] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0107] It is easy for a person skilled in the art to think that any combination of the above embodiments is feasible, so any combination of the above embodiments is an implementation scheme of the present invention. However, due to space limitations, this specification will not describe them in detail here.

[0108] In the description provided herein, a large number of specific details are described. However, it is understood that embodiments of the present invention can be practiced without these specific details. In some instances, well-known methods, structures and techniques are not shown in detail so as not to obscure the understanding of this description.

[0109] Similarly, it should be understood that in order to streamline the present invention and aid in understanding one or more of the various inventive aspects, in the above description of exemplary embodiments of the present invention, various features of the present invention are sometimes grouped together into a single embodiment, figure, or description thereof.

[0110] In addition, those skilled in the art will appreciate that, although some embodiments described herein include certain features included in other embodiments but not other features, the combination of features of different embodiments is meant to be within the scope of the present invention and form different embodiments. For example, in the claims, any one of the claimed embodiments can be used in any combination.

Claims

1. A substrate structure, characterized in that: The substrate structure comprises: A ceramic copper-clad substrate (1), wherein at least two upper core areas (101) are provided on the ceramic copper-clad substrate (1); A plurality of connecting columns (2), wherein the connecting columns (2) are fixedly connected to the ceramic copper-clad substrate (1), and the plurality of connecting columns (2) surround each of the upper core regions (101), and the connecting columns (2) are electrically connected to the middle region of the bonding wire (3).

2. The substrate structure according to claim 1, characterized in that: A plurality of connecting columns (2) are formed around the same upper core area (101) and are distributed at equal intervals.

3. The substrate structure according to claim 2, characterized in that: In the plurality of connecting columns (2) surrounding the same upper core area (101), the distance between two adjacent connecting columns (2) is set within a range of 0.3 mm to 0.4 mm.

4. The substrate structure according to claim 3, characterized in that: The plurality of connecting columns (2) completely surround the upper core area (101) on all sides.

5. The substrate structure according to claim 1, characterized in that: The height of the connecting column (2) extending upward along the surface of the ceramic copper-clad substrate (1) is set within a range of 0.3 mm to 0.4 mm.

6. The substrate structure according to claim 1, characterized in that: The connecting column (2) further comprises a body (21) and a conductive layer (22), wherein the conductive layer (22) covers the outer surface of the body (21), and the bonding wire (3) is bonded to the conductive layer (22).

7. The substrate structure according to claim 6, characterized in that: The main body (21) and the ceramic copper-clad substrate (1) are an integrated structure.

8. An intelligent power module, characterized in that: The intelligent power module comprises a substrate structure as described in any one of claims 1-7.

9. A controller, characterized in that: The controller comprises the intelligent power module as claimed in claim 8.

10. A household appliance, characterized in that: The household appliance comprises the controller as claimed in claim 9.

11. A method for manufacturing a substrate, characterized in that: The substrate manufacturing method comprises: Providing ceramic slurry, and coating the ceramic slurry on a selective light-transmitting film platform (8), and pressing down a sample stage (7) to expose the ceramic slurry, so that the cured ceramic slurry adheres to the sample stage (7), thereby obtaining a layer of substrate embryo; The ceramic slurry is repeatedly coated on the selective light-transmitting film platform (8), and after each coating of the ceramic slurry, the sample stage (7) is pressed down to expose the ceramic slurry, so that the cured ceramic slurry adheres to the cured substrate embryo on the sample stage (7), thereby obtaining a multi-layer substrate embryo (9), wherein at least two upper core regions (101) are arranged on the multi-layer substrate embryo, and a plurality of connecting columns (2) are extended from the multi-layer substrate embryo, and the plurality of connecting columns (2) surround each of the upper core regions (101); calcining the multi-layer substrate green body (9), and sintering the calcined multi-layer substrate green body (9) to obtain the ceramic substrate (102); The ceramic substrate (102) is copper-clad to obtain a substrate structure.

12. The method for manufacturing a substrate according to claim 11, characterized in that: The substrate manufacturing method further comprises: Anhydrous ethanol, ceramic powder and photosensitive resin are mixed to obtain the ceramic slurry.

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