Coaxial high-voltage pulse link system for generating large current based on photoconductive semiconductor

Abstract

A coaxial high-voltage pulse link system generating large current based on a photoconductive semiconductor is characterized in that a current diverter is connected to a coaxial radio frequency cavity, a coaxial gradient electrode is arranged in the coaxial radio frequency cavity and connected with the tail end of the current diverter, and the end face of one side, facing the coaxial radio frequency cavity, of a coaxial capacitor module is connected with the coaxial radio frequency cavity; the light guide semiconductor packaging assembly is located in an inner ring of the coaxial capacitor module, one end of the light guide semiconductor packaging assembly is connected with the coaxial gradual change electrode, and the other end of the light guide semiconductor packaging assembly is connected with the high-voltage optical fiber feed-in end cap. One pin of the carbon film load resistor is connected to the coaxial high-voltage ring, the other pin of the carbon film load resistor is connected to the high-voltage optical fiber feed-in end cap, and the coaxial high-voltage ring is connected with direct-current high voltage or pulse high voltage through a cable. The coaxial high-voltage pulse link system capable of generating the large current based on the photoconductive semiconductor is a coaxial radio frequency link system capable of generating kA-level large current, high in power and low in stray parameter.

Description

Technical Field

[0001] The present invention relates to the fields of semiconductors, radio frequency and microwave photonics, and in particular to a coaxial radio frequency link system based on photoconductive semiconductor devices to generate kA-level large current, high power and low stray parameters. Background Art

[0002] With the rapid development of science and technology and the continuous progress of society, the semiconductor industry has become a major industry in the world. As a new type of semiconductor device, wide bandgap and ultra-wide bandgap semiconductor devices are widely used in RF power amplifiers, microwave devices and radar systems because of their unique advantages such as large bandgap width, high breakdown electric field, good thermal stability, high electron mobility, high saturation drift velocity and high electron concentration. They also have broad application prospects in optoelectronics, quantum electronics and other fields. In recent years, with the in-depth development of disciplines such as materials science, microelectronics technology and semiconductor physics, the research on wide bandgap and ultra-wide bandgap semiconductor devices has made significant progress and has become one of the research hotspots in the semiconductor field. Common wide bandgap semiconductor materials include silicon carbide (SiC) and gallium nitride (GaN), and ultra-wide bandgap semiconductor materials include gallium oxide (Ga2O3), aluminum nitride (AIN), diamond, etc. According to different electrode configurations, they are divided into coplanar type, occlusal type, facing type, non-facing type, etc. Due to the small size (tens of mm2) of wide bandgap semiconductor devices, the wide bandgap semiconductor device has a good performance. 3 ), high repetition rate (above MHz), short closing time (sub-ns), small time jitter (sub-ns), large power capacity, strong electromagnetic compatibility and many other superior performance characteristics, making it the core device for the development of new RF power amplifiers, microwave photon radiation sources, solid-state compact pulse power sources, etc. With the continuous improvement of device power, repetition frequency, life and stability in the application of photoconductive semiconductor devices in different fields, the output requirements of the devices are becoming more and more stringent, and the signal quality of the RF link of the devices is becoming more and more ideal. Therefore, research on high power output and low stray parameter extraction of devices is particularly important.

[0003] At present, the commonly used photoconductive semiconductor devices in RF links are silicon carbide (SiC) and gallium nitride (GaN). According to the output frequency, they are divided into low frequency, medium frequency and high frequency. According to the RF link, they are divided into integrated circuit type, microstrip line type, pulse forming line type, etc. In the RF link, frequency and capacitance are two important parameters, and there is an inseparable relationship between them. According to the impedance formula XC=½πFC, it can be seen that the impedance of the capacitor is inversely proportional to the frequency. Therefore, the larger the capacitance value, the lower the frequency, and the smaller the capacitance value, the higher the frequency. With the application of high-frequency signals, the capacitance value of semiconductor devices should be as small as possible, resulting in the electrode spacing on the semiconductor being short enough. However, the short electrode spacing will lead to a decrease in the device's high voltage resistance and a decrease in output power. For example, if a semiconductor device wants to respond to GHz output, the electrode spacing on the semiconductor device is about 1mm. To generate a 100A current output, the voltage output reaches 5kV. The semiconductor's own impedance plus the potential internal resistance in the circuit, the device's voltage resistance is close to 7kV. We know that in the air, the breakdown voltage of 1mm spacing is about 3kV. With the combination of electrode optimization and potting insulation glue, the breakdown voltage of 1mm spacing can reach about 10kV. However, if the output current is in the kA level, the voltage output is as high as 50kV, and the voltage resistance of the device is close to 100kV. Therefore, it is unrealistic to achieve such a voltage resistance with a 1mm spacing. Therefore, based on such problems, the present invention is conceived according to the structural characteristics and process limitations of semiconductor devices themselves, as well as the high-power application requirements of devices in radio frequency links, and proposes a coaxial radio frequency link system based on photoconductive semiconductor devices to generate kA-level large current, high power, and low stray parameters. Summary of the invention

[0004] The technical problem to be solved by the present invention is to overcome the shortcomings of the prior art and provide a coaxial RF link system in which a photoconductive semiconductor device can generate a large current of kA level and low stray parameters, so as to solve the bottleneck problem that the photoconductive semiconductor device is difficult to extract the kA level current output in the RF circuit, as well as the key technical problems such as the voltage output with low stray parameters, and provide a brand-new technical solution for the application design of high-power semiconductor devices.

[0005] In order to solve the above technical problems, the technical solution proposed in the present invention is: a coaxial high-voltage pulse link system based on photoconductive semiconductor to generate large current, comprising a coaxial radio frequency cavity, a coaxial capacitor module, a coaxial high-voltage ring, a photoconductive semiconductor packaging component, a coaxial gradient electrode, a current shunt, a carbon film load resistor and a high-voltage optical fiber feeding end cap; the current shunt is connected to the coaxial radio frequency cavity, the coaxial gradient electrode is arranged in the coaxial radio frequency cavity and connected to the end of the current shunt, the end face of the coaxial capacitor module facing one side of the coaxial radio frequency cavity is connected to the coaxial radio frequency cavity, and the end face of the coaxial capacitor module facing the coaxial radio frequency cavity is connected to the coaxial radio frequency cavity. The photoconductive semiconductor package component is located in the inner ring of the coaxial capacitor module, and one end of the photoconductive semiconductor package component is connected to the coaxial gradient electrode, and the other end is connected to the high-voltage optical fiber feeding end cap, the coaxial high-voltage ring is connected to the high-voltage end face of the coaxial capacitor module, one pin of the carbon film load resistor is connected to the coaxial high-voltage ring, and the other pin is connected to the high-voltage optical fiber feeding end cap, and the coaxial high-voltage ring is connected to a DC high voltage or a pulse high voltage through a cable; the centers of the coaxial RF cavity, the coaxial capacitor module, the coaxial gradient electrode and the coaxial high-voltage ring are located on the same axis.

[0006] The above-mentioned coaxial high-voltage pulse link system for generating large current based on photoconductive semiconductors, preferably, the shell of the current diverter is provided with a first external thread, the coaxial radio frequency cavity is provided with a first internal thread matching the first external thread, and the first external thread on the current diverter is connected to the first internal thread on the coaxial radio frequency cavity.

[0007] The above-mentioned coaxial high-voltage pulse link system for generating large current based on photoconductive semiconductors, preferably, the end of the current diverter is provided with a second external thread, the coaxial gradient electrode is provided with a second internal thread, and the second internal thread on the coaxial gradient electrode is connected to the second external thread at the end of the current diverter.

[0008] In the above-mentioned coaxial high-voltage pulse link system based on photoconductive semiconductors to generate large currents, preferably, the coaxial capacitor module is in a circular ring configuration, one end face of the coaxial capacitor module is connected to the coaxial RF cavity, and the other end face is connected to the coaxial high-voltage ring to form a high-voltage end face.

[0009] In the above-mentioned coaxial high-voltage pulse link system based on photoconductive semiconductors to generate large currents, preferably, the coaxial high-voltage ring is in a circular ring configuration and is closely attached to the high-voltage end face of the coaxial capacitor module.

[0010] In the above-mentioned coaxial high-voltage pulse link system based on photoconductive semiconductors to generate large currents, preferably, the photoconductive semiconductor packaging component is located in the inner ring of the circular configuration of the coaxial capacitor module, and the optical path center of the photoconductive semiconductor packaging component is located on the same axis as the center of the coaxial RF cavity, the coaxial capacitor module and the coaxial high-voltage ring.

[0011] In the above-mentioned coaxial high-voltage pulse link system based on photoconductive semiconductors to generate large currents, preferably, the carbon film load resistors are multiple in number and are evenly arranged between the coaxial high-voltage ring and the high-voltage optical fiber feeding end cap.

[0012] In the above-mentioned coaxial high-voltage pulse link system based on photoconductive semiconductors to generate large currents, preferably, the coaxial radio frequency cavity includes five external cavities, and the outer diameters of the five external cavities increase successively.

[0013] Compared with the prior art, the advantages of the present invention are: the coaxial high-voltage pulse link system based on photoconductive semiconductors to generate large current is a coaxial radio frequency link system capable of generating kA-level large current, high power, and low stray parameters. The coaxial high-voltage pulse link system based on photoconductive semiconductors to generate large current has the characteristics of small structure size, light weight, high voltage resistance, large current generation, and high power transmission. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a front view of the coaxial high-voltage pulse link system for generating large current based on photoconductive semiconductors in Example 1.

[0015] Figure 2 This is a right view of the coaxial high-voltage pulse link system for generating large current based on photoconductive semiconductors in Example 1.

[0016] Figure 3 This is a schematic cross-sectional view of the coaxial high-voltage pulse link system for generating large current based on photoconductive semiconductors in Example 1.

[0017] Figure 4 This is a flow chart of the coaxial high-voltage pulse link system for generating large current based on photoconductive semiconductors in Example 1.

[0018] Figure 5 It is a left side view of the photoconductive semiconductor package component.

[0019] Figure 6 It is a front view of a photoconductive semiconductor package component.

[0020] Figure 7 It is a right side view of the photoconductive semiconductor package component.

[0021] Figure 8 This is a cross-sectional structural diagram of the high-voltage optical fiber feeding end cap.

[0022] Fig. 9 This is a cross-sectional structural diagram of the coaxial RF cavity.

[0023] Fig.10 This is a top view of the coaxial RF cavity.

[0024] Fig.11 A cross-sectional structural diagram of a current shunt.

[0025] Fig.12 This is a cross-sectional structural diagram of the coaxial gradient electrode.

[0026] Fig.13 This is a cross-sectional structural diagram of a coaxial capacitor module.

[0027] Fig.14 This is the top view of the coaxial capacitor module.

[0028] Fig.15 This is the top view of the coaxial high-voltage ring.

[0029] Fig.16 This is a cross-sectional structural diagram of the coaxial high-pressure ring.

[0030] Fig.17 This is a cross-sectional structural diagram of a carbon film non-inductive load resistor.

[0031] Fig.18 This is a typical kA-level current waveform generated by the coaxial high-voltage pulse link system of this embodiment that generates large current based on photoconductive semiconductors.

[0032] Legend 1. Current shunt; 2. Coaxial RF cavity; 3. Coaxial gradient electrode; 4. Coaxial capacitor module; 5. Coaxial high-voltage ring; 6. Carbon film non-inductive load resistor; 7. High-voltage optical fiber feeding end cap; 8. Photoconductive semiconductor packaging component; 9. Fixing screw. DETAILED DESCRIPTION

[0033] In order to facilitate the understanding of the present invention, the present invention will be described more comprehensively and carefully in combination with preferred embodiments below, but the protection scope of the present invention is not limited to the following specific embodiments.

[0034] It should be noted that when an element is described as being "fixed, fixed, connected or connected to" another element, it can be directly fixed, fixed, connected or connected to the other element, or it can be indirectly fixed, fixed, connected or connected to the other element through other intermediate connectors.

[0035] Unless otherwise defined, all the professional terms used below have the same meanings as those generally understood by those skilled in the art. The professional terms used herein are only for the purpose of describing specific embodiments and are not intended to limit the scope of protection of the present invention. Example

[0036] like Figure 1 , Figure 2 and Figure 3A coaxial high-voltage pulse link system based on photoconductive semiconductors to generate large currents is shown, comprising a coaxial radio frequency cavity 2, a coaxial capacitor module 4, a coaxial high-voltage ring 5, a photoconductive semiconductor packaging component 8, a coaxial gradient electrode 3, a current shunt 1, a carbon film load resistor and a high-voltage optical fiber feeding end cap 7; the centers of the coaxial radio frequency cavity 2, the coaxial capacitor module 4, the coaxial gradient electrode 3 and the coaxial high-voltage ring 5 are located on the same axis. The current diverter 1 is connected to the coaxial RF cavity 2, the coaxial gradient electrode 3 is arranged in the coaxial RF cavity 2 and connected to the end of the current diverter 1, the end face of the coaxial capacitor module 4 facing the coaxial RF cavity 2 is connected to the coaxial RF cavity 2, the photoconductive semiconductor package component 8 is located in the inner ring of the coaxial capacitor module 4 and one end of the photoconductive semiconductor package component 8 is connected to the coaxial gradient electrode 3 and the other end is connected to the high-voltage optical fiber feeding end cap 7, the coaxial high-voltage ring 5 is connected to the high-voltage end face of the coaxial capacitor module 4, one pin of the carbon film load resistor is connected to the coaxial high-voltage ring 5 and the other pin is connected to the high-voltage optical fiber feeding end cap 7, and the coaxial high-voltage ring 5 is connected to a DC high voltage or a pulse high voltage through a cable.

[0037] like Figure 4 As shown, in this embodiment, the light source energy is transmitted through the optical fiber, the optical fiber feed is connected to the high-voltage optical fiber end cap, and the light energy is irradiated on the photoconductive semiconductor package assembly 8. The photoconductive semiconductor device of the photoconductive semiconductor package assembly 8 receives the light energy and generates strong photogenerated carriers under the joint action of the bias voltage of the coaxial capacitor module 4. The optical signal is converted into an electrical signal under the action of the coaxial radio frequency structure, and finally extracted through the current shunt 1 and collected on the oscilloscope. Photoconductive semiconductor devices can use conventional wide bandgap semiconductor materials such as silicon carbide (SiC), gallium nitride (GaN), aluminum nitride (AIN), diamond, etc. Its technical solution is also conventional and consists of six major systems such as light source, high voltage, semiconductor device packaging, photoconductive coupling, radio frequency configuration, and large current extraction.

[0038] In this embodiment, the photoconductive semiconductor packaging component 8 has the functions of completing the packaging of the photoconductive semiconductor device, improving the insulation and withstand voltage capability of the photoconductive semiconductor device, and completing the light input and electrical output. Figure 5 As shown, the front view is shown in 6, and the right side view is shown in Figure 7As shown. The semiconductor package assembly consists of a wide bandgap semiconductor device, a high-voltage electrode, an output electrode, a high-voltage insulating packaging glue, a package assembly board, fixings, etc. In the structural dimension design, the insulator length of the photoconductive semiconductor package assembly 8 is L7=L12=30mm, the width is L8=L13=L11=30mm, the height is H22=12.5mm, the chamfer is r13=2mm, the chamfer r14 is 2mm, the height of the high-voltage electrode fixing cap and the output electrode fixing cap is H23=24.5mm, the height of the high-voltage electrode end face and the output electrode end face is H24=34.5mm, the output electrode is M9=M8 external thread, the length is L9=13mm, the high-voltage electrode is M10=M8 external thread, the length is L10=13mm.

[0039] In this embodiment, the high-voltage optical fiber feeding end cap 7 has the functions of completing the connection between the optical fiber and the high-voltage end and completing the optical fiber feeding. The cross-sectional structure diagram of the high-voltage optical fiber feeding end cap 7 is shown in FIG. Figure 8 As shown, the selected material is brass, and the design adopts a coaxial integrated configuration. In the structural dimension design, the high-voltage connection end is M11=M8 internal thread, the thread depth is H28=9mm, the outer radius is R24=8mm, the height is H29=15mm, the chamfer is r15=5mm, the fiber feeding end is M12=M5 external thread, the inner radius is R25=2mm, the total height of the high-voltage fiber feeding end cap 7 is H30=20mm, and the surface finish is better than 0.8.

[0040] In this embodiment, the shell of the current splitter 1 is provided with a first external thread, the coaxial RF cavity 2 is provided with a first internal thread matching the first external thread, and the first external thread on the current splitter 1 is connected to the first internal thread on the coaxial RF cavity 2. The end of the current splitter 1 is provided with a second external thread, the coaxial gradient electrode 3 is provided with a second internal thread, and the second internal thread on the coaxial gradient electrode 3 is connected to the second external thread at the end of the current splitter 1.

[0041] In this embodiment, the coaxial RF cavity 2 includes 5 external cavities, and the outer diameters of the 5 external cavities increase successively. The function of the coaxial RF cavity 2 is to complete the extraction of higher frequency response signals in the RF link, complete the connection between the input end and the output end, and complete the system heat dissipation under high frequency. The cross-sectional structure diagram of the coaxial RF cavity 2 is shown in FIG. Fig. 9 As shown, the top view is Fig.10As shown, the selected material is brass, and the design adopts a coaxial integrated configuration. In the structural dimension design, the internal thread height is H1=7mm, the internal thread is M1=M16 internal thread, the inner cavity angle is Y0=68.47°, the chamfer is r4=10mm, the outer cavity outer diameter 1 radius is R1=23mm, the height is H3=4mm, the length from R4 is L3=12mm, the outer cavity outer diameter 2 radius is R2=25mm, the height is H5=4mm, the length from R4 is L2=10mm, the outer cavity outer diameter 3 radius is R3=27mm, the height is H7=4mm, and the length from R4 is L1=8m m, the radius of the outer cavity outer diameter 4 is R4=35mm, the height is H2=3mm, H4=3mm, H6=3mm, the chamfer is r1=2mm, the radius of the fixed hole spacing of the coaxial RF cavity 2 is R5=44mm, the size of the fixed hole is Ø1=5.5mm, the number is 6, evenly distributed around the circumference, the outer radius 6 of the outer cavity is R6=50mm, the chamfer r2=1mm, the chamfer r3=1mm, there are two heights, namely height 1 and height 2, height 1 is H8=22mm, height 2 is H9=25mm, such as Figure 7 As shown, the ground fixing hole is an M2=M4 external thread, located between the two fixing holes, with a through depth, Ø2 is the fixing hole size = Ø1 = 5.5mm, and Ø3 is the outer diameter of the outer cavity = 100mm.

[0042] The current splitter 1 of this embodiment is used to extract the current value in the link. Its cross-sectional structure diagram is as follows: Fig.11 The current shunt 1 used is based on the principle of Ohm's law and is designed to be a very small known impedance. It is connected in series to the circuit under test and the voltage drop caused by the current flowing through the two sections of the shunt is measured. According to I=U / R, the current value in the circuit can be calculated. In the structural dimension design, the input fixed end is M5=M4 external thread, brass material, height H15=6mm, the high-voltage insulation sleeve is made of polytetrafluoroethylene, the outer radius is R13=4.5mm, the height is H16=7mm, the ground terminal is fixed with M6=M16 external thread, brass material, height H17=12mm, the outer radius of the limit ring is R14=10mm, the height is H18=3mm, the shell radius is R16=8mm, the height is H19=46mm, the output interface is BNC, the height is H20=11mm, the outer diameter of the fixing buckle is Ø11=2mm, the height from the port is H21=5mm, the length of the fixing buckle from the center is L4=6mm, and the outer radius of BNC is R15=4.75mm.

[0043] In this embodiment, the coaxial gradient electrode 3 has the functions of completing the connection impedance matching and completing the connection between the output end of the photoconductive semiconductor device and the current splitter 1. The cross-sectional structure diagram of the coaxial gradient electrode 3 is shown in FIG. Fig.12As shown, the selected material is brass, and the design adopts a coaxial integrated configuration. In the structural dimension design, the measurement input butt end is M8=M8 internal thread, the thread depth is L6=6mm, the outer radius is R18=8mm, the measurement output butt end is M7=M3 internal thread, the thread depth is L5=4mm, the outer radius is R17=4.56mm, the gradient angle is Y2°=69°, the chamfer is r12=5mm, and the overall structural finish is better than 0.8.

[0044] In this embodiment, the coaxial capacitor module 4 is in a circular ring configuration, one end face of the coaxial capacitor module 4 is connected to the coaxial RF cavity 2, and the other end face is connected to the coaxial high-voltage ring 5 as a high-voltage end face. The coaxial high-voltage ring 5 is also in a circular ring configuration, and is closely attached to the high-voltage end face of the coaxial capacitor module 4; the outer diameter of the coaxial high-voltage ring 5 is smaller than the outer diameter of the coaxial capacitor module 4.

[0045] In this embodiment, the photoconductive semiconductor package component 8 is located in the inner ring of the circular configuration of the coaxial capacitor module 4, and the optical path center of the photoconductive semiconductor package component 8 is located on the same axis as the center of the coaxial RF cavity 2, the coaxial capacitor module 4 and the coaxial high-voltage ring 5.

[0046] In this embodiment, the coaxial capacitor module 4 has the functions of completing parameter optimization by multi-stage parallel connection, completing the shielding of stray parameters in the link, and providing bias voltage for the photoconductive semiconductor device. Fig.13 As shown, the top view is Fig.14 As shown, the selected material is alumina ceramic, the design adopts a coaxial ring integrated configuration, and the designed capacitance value is nF. In the structural dimension design, the inner ring radius is R7=25mm, the front chamfer is r5=3mm, the rear chamfer is r6=3mm, the high-voltage electrode fixing hole is M3=M5 internal thread, the hole depth is H10=5mm, the hole outer diameter is Ø4=12mm, the chamfer is r7=0.5mm, the hole spacing radius is R8=44mm, the number of fixing holes is 6, and the hole fixing layout is evenly distributed around the circumference. The outer radius of the coaxial capacitor module 4 is R9=60mm, the height 1 is H11=24mm, the height 2 is H12=26mm, the inner diameter of the overall structure is Ø5=50mm, and the outer diameter is Ø6=120mm.

[0047] In this embodiment, the coaxial high-voltage ring 5 has the functions of completing high-voltage docking and completing electric field homogenization. The top view of the coaxial high-voltage ring 5 is as follows: Fig.15 As shown, the cross-sectional structure diagram is as follows Fig.16As shown, the selected material is brass, and the design adopts a coaxial ring integrated configuration. In the structural dimension design, the inner radius of the ring is R10 = 40mm, the height is H14 = 9mm, the front chamfer is r8 = 1mm, the rear chamfer is r9 = 1mm, the high-voltage fixing hole is Ø9 = 5.2mm, the hole spacing radius is R11 = 44mm, the number of holes is 6, and the hole layout is evenly distributed around the circumference. The outer radius of the coaxial high-voltage ring 5 is R12 = 50mm, the front chamfer is r11 = 2mm, the rear chamfer is r10 = 2mm, the 6-pin hole of the carbon film non-inductive load resistor is Ø10 = 1mm, the height from the rear plane of the ring is H13 = 2.5mm, the number of holes is 6, and the hole layout is evenly distributed around the circumference and located at the center of the two high-voltage fixing holes, as shown in FIG. Fig.10 As shown, the high-voltage feed-in fixing hole is M4 = M4 external thread, the depth is through, Ø7 is the inner diameter of the coaxial high-voltage ring 5 = 80 mm, and Ø8 is the outer diameter of the coaxial high-voltage ring 5 = 100 mm.

[0048] In this embodiment, the number of carbon film load resistors is 6, which are evenly arranged between the coaxial high voltage ring 5 and the high voltage optical fiber feeding end cap 7. The carbon film non-inductive load resistor 6 in this embodiment has the function of providing low stray load and matching link load impedance value. The cross-sectional structure diagram of the carbon film non-inductive load resistor 6 is as follows: Fig.17 As shown, the selected material is carbon film, the single impedance value is 50Ω, and the inductance value is less than 10nH. In the structural dimension design, the outer radius 1 of the carbon film material is R20=4.5mm, the outer radius 2 is R21=4mm, the height 1 is H25=15mm, the height 2 is H26=23mm, the outer radius of the metal pin of the carbon film non-inductive load resistor 6 is R19=R22=0.5mm, the distance from the outer diameter of the carbon film material is R23=4.5mm, and the total height of the carbon film non-inductive load resistor 6 is H27=35mm. In this embodiment, the five carbon film load resistors are connected to high voltage, thereby completing the high voltage feed-in; at the same time, since the coaxial high voltage ring 5 is connected to the coaxial capacitor module 4, a bias voltage is formed in the inner ring of the coaxial capacitor module 4.

[0049] The assembly of the coaxial high-voltage pulse link system based on photoconductive semiconductor to generate large current in this embodiment includes the following steps: In the first step, the M6 ​​external thread on the current splitter 1 is fixed to the M1 internal thread of the coaxial RF cavity 2 by rotating clockwise to complete the matching connection between the current splitter 1 and the coaxial RF cavity 2.

[0050] In the second step, the M5 internal thread on the coaxial gradient electrode 3 is fixed to the M7 external thread on the current diverter 1 by rotating clockwise, so as to complete the matching connection between the coaxial gradient electrode 3 and the current diverter 1 .

[0051] In the third step, align the 6 M3 threaded holes on the ground end surface of the coaxial capacitor module 4 with the 6 Ø1 through holes on the coaxial RF cavity 2, and then tighten them in a clockwise direction with 6 fixing screws 9 to complete the matching connection between the coaxial capacitor module 4 and the coaxial RF cavity 2.

[0052] The fourth step is to fix the M9 external thread on the photoconductive semiconductor package component 8 to the M8 internal thread of the coaxial gradient electrode 3 by rotating it clockwise, so as to complete the matching connection between the photoconductive semiconductor package component 8 and the coaxial gradient electrode 3.

[0053] The fifth step is to align the six Ø9 through holes on the coaxial high-voltage ring 5 with the six M3 threaded holes on the high-voltage end face of the coaxial capacitor module 4, and then tighten them in a clockwise direction with six fixing screws 9 to complete the matching connection between the coaxial capacitor module 4 and the coaxial high-voltage ring 5.

[0054] In the sixth step, the M11 internal thread on the high-voltage optical fiber feeding end cap 7 is fixed to the M10 external thread on the optical semiconductor packaging component 8 by rotating clockwise, thereby completing the matching connection between the high-voltage optical fiber feeding end cap 7 and the optical semiconductor packaging component 8.

[0055] Step 7: Fix one end pin of the carbon film non-inductive load resistor 6 to the Ø10 hole on the coaxial high-voltage ring 5, and fix the other end pin to the high-voltage optical fiber feeding end cap 7. There are 6 carbon film non-inductive load resistors 6, which are evenly distributed and fixed around the 6 Ø10 holes on the coaxial high-voltage ring 5, completing the matching connection between the carbon film non-inductive load resistor 6 and the coaxial high-voltage ring 5.

[0056] In the eighth step, the DC high voltage or pulse high voltage is fixed to the M4 internal thread on the coaxial high voltage ring 5 through the cable to complete the connection of the high voltage feed.

[0057] In the ninth step, fix the ground wire to the M2 internal thread on the coaxial RF cavity 2 through the cable to complete the connection of the ground wire.

[0058] The tenth step is to direct the light source signal to the high-voltage optical fiber feeding port through spatial light or to fix it on the high-voltage optical fiber feeding end cap 7 through optical fiber transmission to complete the connection of the light source feeding.

[0059] This embodiment proposes a coaxial RF link system based on photoconductive semiconductor devices to generate kA-level high current, high power, and low stray parameters. Based on photoconductive semiconductor devices, by adjusting different feed parameters, adjustable 0~kA-level high current output can be generated. According to the different power parameters generated, it can be applied to different fields and occasions, including aerospace, aviation, optoelectronics, radar, RF power amplifiers, microwave photon radiation sources, solid-state compact pulse power sources, etc.

[0060] like Fig.18As shown, a typical kA-level current waveform generated by a coaxial radio frequency link system based on a photoconductive semiconductor device to generate a kA-level large current and low stray parameters in this embodiment.

Claims

1. A coaxial high-voltage pulse link system based on photoconductive semiconductors to generate large currents, characterized in that: It includes a coaxial radio frequency cavity, a coaxial capacitor module, a coaxial high-voltage ring, a photoconductive semiconductor packaging component, a coaxial gradient electrode, a current shunt, a carbon film load resistor and a high-voltage optical fiber feeding end cap; the current shunt is connected to the coaxial radio frequency cavity, the coaxial gradient electrode is arranged in the coaxial radio frequency cavity and connected to the end of the current shunt, the end face of the coaxial capacitor module facing the coaxial radio frequency cavity is connected to the coaxial radio frequency cavity, the photoconductive semiconductor packaging component is located in the inner ring of the coaxial capacitor module, one end of the photoconductive semiconductor packaging component is connected to the coaxial gradient electrode, and the other end is connected to the high-voltage optical fiber feeding end cap, the coaxial high-voltage ring is connected to the high-voltage end face of the coaxial capacitor module, one pin of the carbon film load resistor is connected to the coaxial high-voltage ring, and the other pin is connected to the high-voltage optical fiber feeding end cap, and the coaxial high-voltage ring is connected to a DC high voltage or a pulse high voltage through a cable; the centers of the coaxial radio frequency cavity, the coaxial capacitor module, the coaxial gradient electrode and the coaxial high-voltage ring are located on the same axis.

2. The coaxial high-voltage pulse link system based on photoconductive semiconductor to generate large current according to claim 1, characterized in that: The shell of the current splitter is provided with a first external thread, the coaxial radio frequency cavity is provided with a first internal thread matching the first external thread, and the first external thread on the current splitter is connected to the first internal thread on the coaxial radio frequency cavity.

3. The coaxial high-voltage pulse link system based on photoconductive semiconductor to generate large current according to claim 1, characterized in that: The end of the current splitter is provided with a second external thread, the coaxial gradient electrode is provided with a second internal thread, and the second internal thread on the coaxial gradient electrode is connected to the second external thread at the end of the current splitter.

4. The coaxial high-voltage pulse link system based on photoconductive semiconductor to generate large current according to claim 1, characterized in that: The coaxial capacitor module is in a circular ring configuration, one end face of the coaxial capacitor module is connected to the coaxial radio frequency cavity, and the other end face is connected to the coaxial high-voltage ring to form a high-voltage end face.

5. The coaxial high-voltage pulse link system based on photoconductive semiconductor to generate large current according to claim 4, characterized in that: The coaxial high-voltage ring is in a circular ring configuration and is closely attached to the high-voltage end face of the coaxial capacitor module.

6. The coaxial high-voltage pulse link system based on photoconductive semiconductor to generate large current according to claim 1, characterized in that: The photoconductive semiconductor package component is located in the inner ring of the coaxial capacitor module, and the optical path center of the photoconductive semiconductor package component is located on the same axis as the centers of the coaxial radio frequency cavity, the coaxial capacitor module and the coaxial high-voltage ring.

7. The coaxial high-voltage pulse link system based on photoconductive semiconductor to generate large current according to claim 1, characterized in that: The carbon film load resistors are multiple in number and are evenly arranged between the coaxial high-voltage ring and the high-voltage optical fiber feeding end cap.

8. The coaxial high-voltage pulse link system based on photoconductive semiconductor to generate large current according to claim 1, characterized in that: The coaxial radio frequency cavity includes five external cavities, and the outer diameters of the five external cavities increase successively.

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