Image sensor and electronic device including same

Abstract

An image sensor includes: a semiconductor substrate in which a plurality of photosensitive devices are integrated; a band filter array including a plurality of band filters, in which each of the plurality of band filters is configured to resonate light included in a specific wavelength band among the incident light, and to output the resonated light toward the semiconductor substrate; an active layer between the semiconductor substrate and the band filter array, and configured to generate excitons using the resonant light received from the band filter array; and an intermediate layer between the active layer and the semiconductor substrate and configured to transmit at least one of the resonant light or excitons to the semiconductor substrate.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application is based on and claims the benefit of priority from Korean Patent Application No. 10-2023-0143256 filed on October 24, 2023 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference. Technical Field

[0003] The present disclosure relates to an image sensor and an electronic device including the image sensor. Background Art

[0004] The image sensor can sense the color of incident light by using a color filter. In general, a color filter can refer to an absorption filter that selectively transmits only light in a specific wavelength band and absorbs light in the remaining wavelength bands.

[0005] In ultra-high resolution, ultra-small, high-sensitivity image sensors that may include, for example, more than hundreds of millions of pixels, bandpass filters may be used. However, some bandpass filters may have a narrow bandwidth, so there may be a problem that the amount of light passing through the bandpass filter is relatively small, and the signal-to-noise ratio (SNR) may be low. Summary of the invention

[0006] An image sensor having a band filter that divides a band into more parts to improve color representation accuracy and object recognition performance and an electronic device including the image sensor are provided.

[0007] Provided are an image sensor capable of improving optical efficiency of a band filter having a narrower bandwidth and an electronic device including the image sensor.

[0008] Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the embodiments presented in the disclosure.

[0009] According to one aspect of the present disclosure, an image sensor includes: a semiconductor substrate in which a plurality of photosensitive devices are integrated; a band filter array including a plurality of band filters, wherein each of the plurality of band filters is configured to resonate light included in a specific band of incident light and output the resonant light toward the semiconductor substrate; an active layer between the semiconductor substrate and the band filter array and configured to generate excitons using the resonant light received from the band filter array; and an intermediate layer between the active layer and the semiconductor substrate and configured to transmit at least one of the resonant light or the excitons to the semiconductor substrate.

[0010] The active layer may include singlet fissionable material.

[0011] The active layer may further include a metal porphyrin-based phosphorescent dopant.

[0012] The energy band gap of the metal porphyrin-based phosphorescent dopant may be greater than or equal to the energy band gap of a photosensitive device included in the image sensor.

[0013] The intermediate layer may include at least one of oxide, nitride, oxynitride, fluoride, or oxyfluoride.

[0014] The thickness of the active layer may be greater than the thickness of the intermediate layer.

[0015] The thickness of the active layer may be 5 times or more than the thickness of the intermediate layer.

[0016] The thickness of the active layer may be in the range of 50 nm or less.

[0017] The thickness of the intermediate layer may be in the range of 5 nm or less.

[0018] The band filter array may include: a first band filter, configured to resonate first light included in a first band in incident light; and a second band filter, configured to resonate second light included in a second band in incident light, the active layer may include a first active layer, the first active layer is configured to overlap with the first band filter in a thickness direction of the band filter array, and is configured to generate excitons using the resonated first light, and the active layer may also include a second active layer, the second active layer is configured to overlap with the second band filter in a thickness direction of the band filter array, and is configured to generate excitons using the resonated second light.

[0019] The image sensor may further include: a barrier rib between the first active layer and the second active layer.

[0020] The barrier rib may have a refractive index lower than that of the first active layer and that of the second active layer.

[0021] The refractive index of the barrier ribs may be in the range of 2 or less.

[0022] The band filter array may include: a third band filter configured to cause third light included in a third wavelength band in the incident light to resonate; and a fourth band filter configured to cause fourth light included in a fourth wavelength band in the incident light to resonate, and the fourth band filter and the active layer may not overlap in the thickness direction of the band filter array.

[0023] The image sensor may further include an anti-reflection layer configured to overlap the fourth band filter in a thickness direction of the band filter array.

[0024] The anti-reflection layer may include at least one of hafnium oxide, silicon oxide, aluminum oxide, or silicon nitride.

[0025] The image sensor may further include: an anti-reflection layer between the band filter array and the active layer.

[0026] The band filter array may include pigments that absorb light in a wavelength band different from the specific wavelength band.

[0027] According to one aspect of the present disclosure, an electronic device includes: an image sensor configured to receive light reflected from an object and convert the light into an electrical signal; and a processor configured to generate an image corresponding to the object using the electrical signal received from the image sensor, wherein the image sensor may include: a semiconductor substrate in which a plurality of photosensitive devices are integrated; a band filter array including a plurality of band filters, wherein each of the plurality of band filters is configured to resonate light included in a specific wavelength band in incident light and output the resonant light toward the semiconductor substrate; an active layer between the semiconductor substrate and the band filter array and configured to generate excitons using the resonant light received from the band filter array; and an intermediate layer between the active layer and the semiconductor substrate and configured to transmit at least one of the resonant light and the excitons to the semiconductor substrate.

[0028] The image sensor may further include an anti-reflection layer disposed between the band filter array and the active layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The above and other aspects, features and advantages of some embodiments of the present disclosure will become more apparent from the following description in conjunction with the accompanying drawings, in which:

[0030] Figure 1 is a schematic block diagram of an image sensor according to an embodiment;

[0031] Figure 2 is a cross-sectional view schematically showing an image sensor according to an embodiment;

[0032] Figure 3 is a reference diagram for explaining a method of detecting light performed by an image sensor according to an embodiment;

[0033] Figure 4 is a reference diagram showing quantum efficiency of an image sensor for each wavelength according to an embodiment;

[0034] Figure 5 is a diagram showing an image sensor including barrier ribs according to an embodiment;

[0035] Figure 6 is a diagram showing an image sensor including an anti-reflection layer according to an embodiment;

[0036] Figure 7 is a diagram showing an image sensor including barrier ribs and an anti-reflection layer according to an embodiment;

[0037] Figure 8 is a diagram showing an image sensor including an anti-reflection layer according to an embodiment;

[0038] 9A to 9D is a perspective view schematically showing the structure of a band filter according to an embodiment;

[0039] Fig. 10A and Fig. 10B is a cross-sectional view schematically showing the structure of a band filter according to an embodiment;

[0040] Fig.11 is a diagram showing an image sensor including a color filter array according to an embodiment;

[0041] Fig.12 is a diagram showing an image sensor including a band filter used as a color filter according to an embodiment;

[0042] Fig.13 is a diagram showing an image sensor including a microlens array according to an embodiment;

[0043] Fig.14 is a diagram showing an image sensor including a single lens according to an embodiment;

[0044] Fig.15 is a block diagram schematically illustrating an electronic device including an image sensor according to an embodiment;

[0045] Fig.16 is a schematic diagram showing a Fig.15 Block diagram of the camera module;

[0046] Figures 17 to 26 are diagrams illustrating various examples of electronic devices to which image sensors may be applied according to embodiments. DETAILED DESCRIPTION

[0047] Reference will now be made in detail to the embodiments of which examples are shown in the accompanying drawings, wherein similar reference numerals denote similar elements throughout the accompanying drawings. In this regard, the embodiments presented may have different forms and should not be construed as being limited to the descriptions set forth herein. Accordingly, embodiments are described below with reference to the accompanying drawings only to explain various aspects. As used herein, the term "and / or" includes any and all combinations of one or more of the items listed in association. Statements such as "at least one of..." modify the entire list of elements when following a list of elements, rather than modifying individual elements in the list.

[0048] Hereinafter, the embodiments are described in detail with reference to the accompanying drawings. Like reference numerals in the accompanying drawings represent like elements, and the size of each element in the accompanying drawings may be exaggerated for clarity and convenience of description. Meanwhile, the embodiments described below are only examples, and various modifications can be made from these embodiments.

[0049] Hereinafter, what is described as “above” or “on” may include directly above, below, to the left, and to the right of… in a contacting manner, as well as above, below, to the left, and to the right of… in a non-contacting manner. Unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, when it is specified in the specification that a certain part “includes” any element, unless otherwise specified, this means that the part may also include other elements, rather than excluding other elements.

[0050] The term "the" and similar indicative terms may be used in both the singular and the plural. If there is no explicit description of the order of the steps included in the method, or a description contrary thereto, the steps may be performed in a suitable order and are not limited to the order described.

[0051] In addition, the terms “unit”, “module” and the like described herein represent a unit that processes at least one function or operation, and may be implemented as hardware or software, or as a combination of hardware and software.

[0052] The line connections or connecting members between the elements shown in the drawings are illustrations of functional connections and / or physical or circuit connections and may be replaced in actual devices or may be represented as other various functional connections, physical connections or circuit connections.

[0053] It will be understood that although the terms "first", "second", etc. may be used herein to describe various components, these components are not limited by these terms. These terms are only used to distinguish components from each other.

[0054] All examples or exemplary terms are used only to describe the technical concept in detail, and the scope thereof is not limited by these examples or exemplary terms unless limited by the claims.

[0055] Figure 1 is a schematic block diagram of an example of an image sensor 10 according to an embodiment. Figure 1 , the image sensor 10 may include a pixel array 11, a timing controller 12 (illustrated as "T / C"), a row decoder 13, and an output circuit 14. The image sensor 10 may include at least one of a charge coupled device (CCD) image sensor and a complementary metal oxide semiconductor (CMOS) image sensor.

[0056] The pixel array 11 may include pixels arranged two-dimensionally into a plurality of rows and columns. The row decoder 13 may select a row in the pixel array 11 based on or in response to a row address signal output from the timing controller 12. The output circuit 14 may output a photosensitive signal in columns from a plurality of pixels arranged in the selected row. In an embodiment, the output circuit 14 may include a column decoder and an analog-to-digital converter (ADC) that may be used to output the photosensitive signal. For example, the output circuit 14 may include a plurality of ADCs arranged in a plurality of columns between the column decoder and the pixel array 11, or an ADC arranged at the output end of the column decoder. The timing controller 12, the row decoder 13, and the output circuit 14 may be implemented as one chip or separate chips. A processor for processing an image signal output from the output circuit 14 may be implemented as one chip together with the timing controller 12, the row decoder 13, and the output circuit 14, but the embodiment is not limited thereto.

[0057] The pixel array 11 may include a plurality of pixels that can sense light having different wavelengths. The arrangement of the pixels may be implemented in various ways. For example, the arrangement of the pixels may include a blue pixel B, a green pixel G, a red pixel R, and a green pixel G arranged as a unit pattern. In some embodiments, the arrangement of the pixels may include a magenta pixel M, a cyan pixel C, a yellow pixel Y, and a green pixel G arranged as a unit pattern.

[0058] Figure 2 is a cross-sectional view schematically showing an example of an image sensor 10 according to an embodiment. Figure 2 , the image sensor 10 may include a semiconductor substrate 110 in which a plurality of photosensitive devices PD are integrated.

[0059] The semiconductor substrate 110 may be a silicon substrate and may include a plurality of photosensitive devices PD that may convert light into electrical signals. For example, the semiconductor substrate 110 may include a first photosensitive device PD1, a second photosensitive device PD2, a third photosensitive device PD3, and a fourth photosensitive device PD4. The semiconductor substrate 110 may be integrated with a transfer transistor and a charge storage.

[0060] At least one of the first to fourth photosensitive devices PD1, PD2, PD3, and PD4 may be or may include a photodiode. The first to fourth photosensitive devices PD1, PD2, PD3, and PD4 may each include a pn junction or a pin junction. The first to fourth photosensitive devices PD1, PD2, PD3, and PD4 may each include an inorganic semiconductor selected from Si, Ge, GaAs, InP, GaN, AlN, CdTe, ZnTe, copper indium gallium (di) selenide (CIGS), and combinations thereof.

[0061] The first to fourth photosensitive devices PD1, PD2, PD3, and PD4, the transfer transistor, and / or the charge storage may be integrated for each pixel, for example, the first to fourth photosensitive devices PD1, PD2, PD3, and PD4 may each be included in any one of the red pixel R, the green pixel G, the blue pixel B, and the red pixel R. The first to fourth photosensitive devices PD1, PD2, PD3, and PD4 may sense light, and may transmit sensing information corresponding to the sensed light through the transfer transistor.

[0062] The CMOS circuit may be provided in a lower portion of the semiconductor substrate 110 , and may include a transfer transistor and / or a charge storage.

[0063] The image sensor 10 according to the embodiment may include a band filter array 120, which includes a plurality of band filters BF1, BF2, BF3, and BF4 that resonate light of a specific wavelength in the incident light and output light toward the semiconductor substrate 110. The plurality of band filters BF1, BF2, BF3, and BF4 may correspond one to one with the first to fourth photosensitive devices PD1, PD2, PD3, and PD4. One band filter and one photosensitive device may correspond to one pixel. However, the embodiment is not limited thereto. For example, in some embodiments, one photosensitive device may correspond to two or more band filters, and two or more photosensitive devices may correspond to one band filter. For ease of explanation below, one pixel may be described as including one band filter BF and one photosensitive device.

[0064] The band filter array 120 may include a first band filter BF1 disposed on the first photosensitive device PD1, a second band filter BF2 disposed on the second photosensitive device PD2, a third band filter BF3 disposed on the third photosensitive device PD3, and a fourth band filter BF4 disposed on the fourth photosensitive device PD4. Adjacent band filters included in the band filter array 120 may be configured to resonate light having a center wavelength in different bands.

[0065] In an embodiment, the band filter array 120 may include a first reflective layer 121 and a second reflective layer 122 spaced apart from each other, and a cavity 123 disposed between the first reflective layer 121 and the second reflective layer 122 .

[0066] The first reflective layer 121 and the second reflective layer 122 may each have a plane mirror structure including a single material. For example, the first reflective layer 121 and the second reflective layer 122 may include a material selected from polycrystalline silicon (poly-Si), gold (Au), copper (Cu), aluminum (Al), silver (Ag), tungsten (W), titanium (Ti), TiN, SiO 2 、TiO 2 , HfO 2 、 2 O 5 , at least one material of SiC and SiN.

[0067] The cavity 123 may include a first cavity C1, a second cavity C2, a third cavity C3, and a fourth cavity C4 sequentially arranged in a direction (e.g., an X-axis direction) perpendicular to the thickness direction (e.g., a Z-axis direction) of the band filter array 120. The first cavity C1 may be included in the first band filter BF1, the second cavity C2 may be included in the second band filter BF2, the third cavity C3 may be included in the third band filter BF3, and the fourth cavity C4 may be included in the fourth band filter BF4.

[0068] Each of the first to fourth cavities C1, C2, C3, and C4 may include a plurality of dielectric materials 210 and 220 having different dielectric constants. For example, each of the first to fourth cavities C1, C2, C3, and C4 may include a first dielectric material 210 and a second dielectric material 220 alternately arranged in a direction perpendicular to the thickness direction of the band filter BF. Here, the refractive index of the second dielectric material 220 may be greater than the refractive index of the first dielectric material 210. As a specific example, the first dielectric material 210 may include silicon oxide, and the second dielectric material 220 may include titanium oxide. However, this is merely an example, and the embodiment is not limited thereto.

[0069] Each of the first to fourth band filters BF1, BF2, BF3, and BF4 may have various types of dielectric material patterns according to the material, shape, size, and arrangement of each of the first dielectric material 210 and the second dielectric material 220. By changing the dielectric material pattern, the effective refractive index of each of the first to fourth band filters BF1, BF2, BF3, and BF4 may be adjusted. For example, Figure 2As shown in , the effective refractive index can be adjusted by changing the ratio of the volumes respectively occupied by the first dielectric material 210 and the second dielectric material 220 in the cavity 123. Each of the first to fourth band filters BF1, BF2, BF3, and BF4 can resonate and output light having a specific wavelength according to the material, pattern, and thickness of each of the first and second reflective layers 121 and 122 and the effective refractive index of the cavity 123.

[0070] The image sensor 10 may further include an active layer 130 which is disposed between the semiconductor substrate 110 and the band filter array 120 and generates excitons by light incident from the band filter array 120 .

[0071] The active layer 130 may include a singlet fission material. The singlet fission material may generate a singlet exciton upon absorbing a high-energy photon through a multiple exciton generation mechanism, and the singlet exciton may form two triplet excitons through singlet fission. Examples of the active layer 130 and the multiple exciton generation mechanism are described below.

[0072] The image sensor 10 may further include an intermediate layer 140 disposed between the semiconductor substrate 110 and the active layer 130, which may transmit at least one of light or excitons to the semiconductor substrate 110. The intermediate layer 140 may include at least one of oxide, nitride, oxynitride, fluoride, or oxyfluoride.

[0073] Figure 3 is a reference diagram for explaining a method of detecting light performed by the image sensor 10 according to an embodiment. Figure 3 , light L i can be incident on the band filter array 120. For example, light L in the visible light region i (for example, having a wavelength in a wavelength region of approximately 400 nm to 700 nm) may be incident on the band filter array 120 .

[0074] The band filters included in the band filter array 120 can make the incident light L i The light L having a wavelength included in a specific wavelength band o Resonance occurs, and light L is output toward the active layer 130 o In an embodiment, light having a wavelength included in a specific wavelength band may be referred to as light included in the specific wavelength band. Adjacent band filters may cause light having different wavelengths to resonate and output. Light L corresponding to the specific wavelength band o The effective refractive index of the cavity 123, the thickness and material of each of the first reflective layer 121 and the second reflective layer 122 may be determined.o Any one of red light corresponding to a wavelength band of about 600 nm to about 700 nm, green light corresponding to a wavelength band of about 500 nm to about 600 nm, and blue light corresponding to a wavelength band of about 400 nm to about 500 nm may be included.

[0075] When the light o When incident on the active layer 130, the singlet fission material included in the active layer 130 may absorb the light L o At least a portion of the active layer 130 is absorbed by the active layer 130, and a singlet exciton 310 is generated. The singlet exciton 310 may be split into two triplet excitons 320. The two triplet excitons 320 may be extracted as electron-hole pairs 330 after moving to the semiconductor substrate 110 through the intermediate layer 140. The active layer 130 may be used as an organic photon conversion layer having a multi-exciton generation (MEG) effect. The active layer 130 may absorb photons and generate additional excitons, thereby enhancing light transmission to the photosensitive device PD.

[0076] As described above, the singlet fission material can increase the number of excitons through singlet fission, thereby improving the photoelectric conversion efficiency of the photosensitive device located below and improving the sensitivity of the image sensor 10 .

[0077] The singlet fission material may be a single molecule, an oligomer, or a polymer, but the embodiment is not limited thereto.

[0078] The singlet fission material may include acene, polyene, rylene, rubrene, a quinoid compound, a biradicaloid, a derivative thereof, or a combination thereof, but the embodiment is not limited thereto.

[0079] The singlet fission material may have a specific energy of about 1×10 3 cm -1 or larger (e.g., about 1.2×10 3 cm -1 or about 1.5×10 3 cm -1 or greater). Singlet fission materials can have an absorption coefficient of about 1×10 4 cm -1The absorption coefficient can be obtained by coating a singlet fission material on a glass substrate by spin coating to obtain a thin film, obtaining the absorbance of the thin film at the maximum absorption wavelength by using a UV-Vis-NIR spectrometer, and dividing the absorbance by the thickness of the thin film.

[0080] The triplet energy of the singlet fission material can have an energy band gap of about 1.0 eV or greater and about 4.0 eV or less, for example, about 1.1 eV or greater, about 1.2 eV or greater, about 1.3 eV or greater, about 1.4 eV or greater, about 1.5 eV or greater, about 1.6 eV or greater, about 1.7 eV or greater, about 1.8 eV or greater, about 1.9 eV or greater, or about 2.0 eV or greater and about 3.9 eV or less, about 3.8 eV or less, about 3.7 eV or less, about 3.6 eV or less, about 3.5 eV or less, about 3.4 eV or less, about 3.3 eV or less, about 3.2 eV or less, about 3.1 eV or less, or about 3.0 eV or less.

[0081] The energy band gap (of triplet energy) of the singlet fission material may be equal to or greater than the energy band gap of the inorganic semiconductor of each of the first to fourth photosensitive devices PD1, PD2, PD3, and PD4. For example, the difference Eg1-Eg3 between the energy band gap Eg1 of the singlet fission material and the energy band gap Eg3 of the inorganic semiconductor of the photosensitive device PD may be about 0.1 eV or greater, for example, about 0.15 eV or greater, or about 0.2 eV or greater. In the above range, the diffusion and migration of excitons generated from the singlet fission material may be effectively achieved.

[0082] The active layer 130 may include two or more different singlet fission materials, or may include a plurality of layers including different singlet fission materials. For example, the active layer 130 may include a first layer directly or indirectly in contact with the intermediate layer 140, and a second layer on the first layer, and the energy band gap (of triplet energy) of the singlet fission material included in the second layer may be equal to or greater than the energy band gap (of triplet energy) of the singlet fission material included in the first layer. For example, the difference in the energy band gap between the first layer and the second layer may be about 0.1 eV or greater, or about 0.2 eV or greater.

[0083] The active layer 130 may further include a metal porphyrin-based phosphorescent dopant. The metal porphyrin-based phosphorescent dopant may emit light by receiving energy from triplet excitons of a singlet fission material, and the light energy may be received and excited by an inorganic semiconductor of a photosensitive device.

[0084] The amount of the metal porphyrin-based phosphorescent dopant may be about 0.1 to about 10 parts by weight based on 100 parts by weight of the singlet fission material. The metal of the metal porphyrin-based phosphorescent dopant may include at least one of Pt or Pd.

[0085] The energy band gap of the metal porphyrin-based phosphorescent dopant may be equal to or greater than the energy band gap of the inorganic semiconductor of each of the first to fourth photosensitive devices PD1, PD2, PD3, and PD4. For example, the difference Eg2-Eg3 between the energy band gap Eg2 of the metal porphyrin-based phosphorescent dopant and the energy band gap Eg3 of the inorganic semiconductor of the photosensitive device may be about 0.1 eV or greater, for example, about 0.15 eV or greater, or about 0.2 eV or greater. In the above range, the diffusion and migration of excitons generated from the singlet fission material can be effectively achieved.

[0086] The thickness of the active layer 130 may be smaller than the width of the pixel. Triplet excitons generated in the active layer 130 may move to the semiconductor substrate 110 included in the same pixel without moving to an adjacent pixel. For example, the thickness of the active layer 130 may be about 50 nm or less, about 30 nm or less, or about 20 nm or less.

[0087] The triplet excitons generated from the singlet fission material may diffuse into the intermediate layer 140. The intermediate layer 140 may prevent the quenching of the excitons and prevent the extracted electrons and holes from being recombined on the surface of the semiconductor substrate 110. The intermediate layer 140 may facilitate the extraction of charges moving from the active layer 130 to the semiconductor substrate 110, thereby further reducing the residual charges and exhibiting a higher charge extraction efficiency. In addition, the intermediate layer 140 may serve as a passivation layer for protecting the surface of the semiconductor substrate 110.

[0088] The intermediate layer 140 may include a dielectric material having a dielectric constant (which may be referred to as a relative dielectric constant) of about 2 to about 150. The relative dielectric constant may represent a ratio of a dielectric constant of another material to a dielectric constant of a vacuum.

[0089] The dielectric constant of the dielectric material can be about 2.5 or greater, about 3.0 or greater, about 3.5 or greater, about 4.0 or greater, about 4.5 or greater, about 5.0 or greater, about 5.5 or greater, about 6.0 or greater, about 6.5 or greater, about 7.0 or greater, about 7.5 or greater, and about 8.0 or greater and about 145 or less, about 140 or less, about 135 or less, about 130 or less, about 125 or less, about 120 or less, about 115 or less, about 110 or less, about 105 or less, and about 100 or less.

[0090] The intermediate layer 140 may include a plurality of layers. When the intermediate layer 140 includes a plurality of layers, the intermediate layer 140 may include dielectric materials having different dielectric constants.

[0091] The intermediate layer 140 may include an oxide including Si, Al, Sr, Ba, Mg, Ge, Ga, Ti, Zr, Ga, Hf, Ta, Nb, La, Y, Bi, Pb, or a combination thereof, a nitride including Si, Al, Sr, Ba, Mg, Ge, Ga, Ti, Zr, Ga, Hf, Ta, Nb, La, Y, Bi, Pb, or a combination thereof, an oxynitride including Si, Al, Sr, Ba, Mg, Ge, Ga, Ti, Zr, Ga, Hf, Ta, Nb, La, Y, Bi, Pb, or a combination thereof, a fluoride including Si, Al, Sr, Ba, Mg, Ge, Ga, Ti, Zr, Ga, Hf, Ta, Nb, La, Y, Bi, Pb, or a combination thereof, and an oxyfluoride including Si, Al, Sr, Ba, Mg, Ge, Ga, Ti, Zr, Ga, Hf, Ta, Nb, La, Y, Bi, Pb, or a combination thereof. However, the embodiment is not limited thereto.

[0092] The thickness of the intermediate layer 140 may be less than the thickness of the active layer 130. The thickness of the active layer 130 may be five times or more than the thickness of the intermediate layer 140. For example, the thickness of the intermediate layer 140 may be about 5 nm or less, about 3 nm or less, or about 1 nm or less. The intermediate layer 140 may promote diffusion or migration of triplet excitons to the semiconductor substrate 110 and may have a relatively small thickness. The active layer 130 and the intermediate layer 140 may be formed by atomic layer deposition (ALD).

[0093] As described above, excitons generated in the active layer 130 may migrate to the semiconductor substrate 110 through the intermediate layer 140 , which may not require a separate electrode or circuit to migrate charges formed in the active layer 130 , and thus, the image sensor 10 may be miniaturized and simplified.

[0094] Figure 4 is a reference graph showing quantum efficiency (QE) for each wavelength of the image sensor 10 according to example embodiments compared with a comparative example. Figure 4 The image sensor 10 of the example embodiment shown in FIG. 1 may include a band filter array 120, an active layer 130, an intermediate layer 140, and a semiconductor substrate 110. In contrast, Figure 4 The image sensor of the comparative example shown in does not include the active layer 130 and the intermediate layer 140 , but may include the band filter array 120 and the semiconductor substrate 110 . Figure 4The band filter array 120 according to the example embodiment shown in FIG. 1 may be designed to resonate and output light of about 430 nm, about 460 nm, about 510 nm, about 540 nm, about 590 nm, and about 630 nm. The active layer 130 may include a singlet fission material and have a thickness of about 30 nm, and the intermediate layer 140 may include HfO 2 , and has a thickness of about 1 nm. QE may represent a ratio of the number of photons received by the semiconductor substrate 110 to the number of photons incident on the band filter array 120.

[0095] refer to Figure 4 , it can be seen that, compared with the image sensor of the comparative example not including the active layer 130 and the intermediate layer 140, Figure 4 The QE of the image sensor of the example embodiment including the active layer 130 and the intermediate layer 140 shown in FIG. 1 can be increased. For example, it can be confirmed that Figure 4 The QE of the image sensor 10 of the example embodiment shown in can be further increased with respect to a shorter wavelength. For example, it can be confirmed that the QE with respect to light having a central wavelength of about 530 nm or less can be 0.5 or more.

[0096] Figure 5 FIG. 1 is a diagram showing an image sensor 10a including barrier ribs 135 according to an embodiment. Figure 2 Compared to the image sensor 10 shown in FIG. Figure 5 The active layer 130a included in the image sensor 10a may be separated into pixel units by barrier ribs 135. For example, the active layer 130a may include a first active layer 131, a second active layer 132, a third active layer 133, and a fourth active layer 134, and the barrier ribs 135 may be disposed between adjacent active layers among the first to fourth active layers 131, 132, 133, and 134.

[0097] The barrier ribs 135 may prevent light incident on an active layer of a specific pixel or excitons generated therein from moving to an active layer of another pixel. The barrier ribs 135 may have a refractive index smaller than that of each of the first to fourth active layers 131, 132, 133, and 134. The barrier ribs 135 may include an insulating material having a refractive index of 2 or less. For example, the barrier ribs 135 may include SiO 2 、SiN、A1 2 O 3 or TiO 2 , but the embodiment is not limited thereto.

[0098] Among the first to fourth active layers 131 , 132 , 133 , and 134 , light having different wavelengths may be incident on adjacent active layers, and the adjacent active layers may also include different materials that may better absorb the incident light and generate excitons.

[0099] Figure 6 1 is a diagram showing an image sensor 10b including an anti-reflection layer 136 according to an embodiment. Figure 2 Compared to the image sensor 10 shown in FIG. Figure 6 The image sensor 10b may include at least one pixel including an active layer and at least one pixel not including an active layer. For example, the first pixel PX1 may include a first band filter BF1, a first active layer 131, an intermediate layer 140, and a first photosensitive device PD1, and the second pixel PX2 may include a second band filter BF2, an intermediate layer 140, and a second photosensitive device PD2.

[0100] The active layer 131 may have insufficient exciton generation relative to light having a wavelength greater than or equal to a specific wavelength. For example, the active layer 131 may have insufficient exciton generation relative to light having a wavelength greater than or equal to about 600nm. Therefore, a pixel that can detect light of 600nm or greater wavelength may not include the active layer 131. In some embodiments, the image sensor 10b may include an anti-reflection layer 136 so that light output from the band filter can be incident on the second photosensitive device PD2 while minimizing reflection losses. For example, the image sensor 10b may further include an anti-reflection layer 136 that is arranged to overlap with the second band filter BF2 in the thickness direction (e.g., Z-axis direction) of the band filter array 120. The anti-reflection layer 136 may include at least one of hafnium oxide, silicon oxide, aluminum oxide, or silicon nitride.

[0101] Figure 7 1 is a diagram showing an image sensor 10c including barrier ribs 135 and an anti-reflection layer 136 according to an embodiment. Figure 2 Compared to the image sensor 10 shown in , when adjacent pixels PX3 and PX4 include active layers 131 and 132, respectively, Figure 7 The image sensor 10c may include a barrier rib 135 between adjacent active layers 131 and 132. The pixel PX5 not including an active layer may include an anti-reflection layer 136. Examples of the barrier rib 135 and the anti-reflection layer 136 have been described above, and therefore, for Figure 7 Redundant or repeated descriptions thereof are omitted.

[0102] Figure 8 1 is a diagram showing an image sensor 10d including an anti-reflection layer 150 according to an embodiment. Figure 2 Compared to the image sensor 10 shown in FIG. Figure 8The image sensor 10d may further include an anti-reflection layer 150 between the band filter array 120 and the active layer 130. The anti-reflection layer 150 may transmit light incident from the band filter array 120 to the active layer 130 while minimizing reflection. The anti-reflection layer 150 may include at least one of hafnium oxide or silicon oxide.

[0103] Figure 2 It is shown that the first reflective layer 121 and the second reflective layer 122 of the band filter array 120 may each have a simple plane mirror structure including a flat surface, but the surface structure of each of the first reflective layer 121 and the second reflective layer 122 is not limited thereto. For example, 9A to 9D is a perspective view schematically showing the structure of a band filter BF according to various embodiments.

[0104] refer to Fig.9A , the first reflective layer 121 and the second reflective layer 122 may each include a plurality of grooves H arranged periodically. For example, the plurality of grooves H may be arranged in a regular two-dimensional (2D) array. The spacing between the plurality of grooves H may be about 0.1 μm or more and about 10 μm or less. In an embodiment, the spacing of the plurality of grooves H may represent the distance between the corresponding centers of adjacent grooves H, but the embodiment is not limited thereto. The diameter of each of the plurality of grooves H may be about 0.2 times or more of the spacing and about 0.8 times or less of the spacing. Each of the plurality of grooves H may be filled with a material different from the material of each of the first reflective layer 121 and the second reflective layer 122. The material filled inside each of the plurality of grooves H may include a dielectric material having a relatively low refractive index. For example, a dielectric material having a refractive index of about 2.5 or less may fill the inside of each of the plurality of grooves H. For example, the dielectric material filled inside each of the plurality of grooves H may include SiO 2 、SiN、A1 2 O 3 or HfO 2 In some embodiments, a portion or all of the interior of each of the plurality of grooves H may be empty. The plurality of grooves H may penetrate the first reflective layer 121 and the second reflective layer 122, or may not penetrate the first reflective layer 121 and the second reflective layer 122, but may be formed by partially etching the surface of each of the first reflective layer 121 and the second reflective layer 122. Fig.9A In the example of FIG. 5 , the shape of each of the plurality of grooves H is shown as a circle, but the embodiment is not limited thereto. Each of the plurality of grooves H may have a circle, an ellipse, or various polygonal shapes.

[0105] refer to Fig. 9B, the first reflective layer 121 and the second reflective layer 122 may have a multilayer structure in which at least one first dielectric material layer 230 having a first refractive index and at least one second dielectric material layer 240 having a second refractive index different from the first refractive index are alternately stacked. For example, the first reflective layer 121 and the second reflective layer 122 may each be or may each include a distributed Bragg reflector (DBR). The thickness of each of the at least one first dielectric material layer 230 and the at least one second dielectric material layer 240 may be about 15 nm or more and about 250 nm or less.

[0106] refer to Fig. 9C , the first reflective layer 121 and the second reflective layer 122 may each include a plurality of grids periodically arranged in one dimension. Fig.9D , the first reflective layer 121 and the second reflective layer 122 may each include a plurality of grids periodically arranged two-dimensionally. The spacing between the plurality of grids may be about 0.1 μm or more and about 10 μm or less. The width of each of the plurality of grids may be about 0.1 times or more and about 0.9 times or less of the spacing.

[0107] like 9A to 9D As shown in , the first reflective layer 121 and the second reflective layer 122 may have a one-dimensional or two-dimensional periodic structure. The resonant wavelength of the band filter BF may be determined by adjusting the period of the periodic structure, the shape of the periodic structure, the thickness of the periodic structure, etc.

[0108] The above-mentioned example of the frequency band filter BF may have a vertical resonance structure. However, the embodiment is not limited thereto. For example, in some embodiments, the frequency band filter BF may have a horizontal resonance structure.

[0109] Fig. 10A and Fig. 10B is a cross-sectional view schematically showing the structure of a band filter BF according to some embodiments.

[0110] refer to Fig. 10A, the band filter BF may include a resonator including a plurality of nanostructures 124 arranged one-dimensionally or two-dimensionally on a plane parallel to the surface of the semiconductor substrate 110, and a base layer 125 disposed between the plurality of nanostructures 124. The size of each of the plurality of nanostructures 124 may be smaller than the transmission wavelength of the band filter BF. For example, the cross-sectional width or diameter of each of the plurality of nanostructures 124 may be smaller than 400nm, 300nm, or 200nm. Each of the plurality of nanostructures 124 may include a material having a refractive index greater than the refractive index of each base layer 125. The resonator including the plurality of nanostructures 124 may have, for example, a one-dimensional or two-dimensional periodic structure (e.g., a photonic crystal), or a chirped structure in which the period gradually changes. In this case, light may resonate in a second direction (e.g., an X-axis direction) or a third direction (e.g., a Y-axis direction) (i.e., a horizontal direction) perpendicular to the first direction (e.g., a Z-axis direction). In this regard, the resonator may be a horizontal resonator that resonates horizontally.

[0111] The incident light Li may resonate in the second direction (e.g., X-axis direction) or the third direction (e.g., Y-axis direction) through the cavity 123, and the emitted light Lo after the resonance may be incident toward the semiconductor substrate 110. The base layer 125 may be provided to fill the space between the plurality of nanostructures 124 of the resonator. Therefore, when the light resonates, the light included in the band other than the transmission band may be absorbed by the base layer 125 while repeatedly passing through the base layer 125.

[0112] In addition, reference Fig. 10B , the base layer 125 may be configured to fill the spaces between the plurality of nanostructures 124 of the resonator and completely cover the lower and upper surfaces of the plurality of nanostructures 124. Therefore, the plurality of nanostructures 124 of the resonator may be buried inside the base layer 125, respectively.

[0113] Fig.11 is a diagram showing an image sensor 10e including a color filter array 160 according to an embodiment. Figure 2 Compared to the image sensor 10 shown in FIG. Fig.11 The image sensor 10 e may further include a color filter array 160 disposed on an upper portion of the band filter array 120 .

[0114] For example, the color filter array 160 may include a plurality of color filters CF1, CF2, CF3, and CF4. Fig.11As shown in , the first color filter CF1 can be set to correspond to the first band filter BF1, the second color filter CF2 can be set to correspond to the second band filter BF2, the third color filter CF3 can be set to correspond to the third band filter BF3, and the fourth color filter CF4 can be set to correspond to the fourth band filter BF4. However, the embodiment is not limited thereto. For example, in some embodiments, one color filter can be set to correspond to two or more band filters.

[0115] Each of the first to fourth color filters CF1, CF2, CF3, and CF4 can allow the corresponding first to fourth band filters BF1, BF2, BF3, and BF4 to block light in an unnecessary band and transmit light in a desired band. For example, when the first band filter BF1 resonates light with a center wavelength in a band of about 400nm to 500nm, the first color filter CF1 can be a blue filter that transmits blue light. In addition, when the second band filter BF2 resonates light with a center wavelength in a band of about 500nm to 600nm, the second color filter CF2 can be a green filter that transmits green light. In addition, when the third band filter BF3 resonates light with a center wavelength in a band of about 600nm to 700nm, the third color filter CF3 can be a red filter that transmits red light.

[0116] Each of the first to fourth color filters CF1, CF2, CF3, and CF4 may include a polymer-based pigment. For example, a green filter may include a first pigment that transmits light in a green band and absorbs light in other bands, a blue filter may include a second pigment that transmits light in a blue band and absorbs light in other bands, and a red filter may include a third pigment that transmits light in a red band and absorbs light in other bands.

[0117] Fig.12 1 is a diagram showing an image sensor 10f including a band filter 120a used as a color filter according to an embodiment. Figure 2 Compared to the image sensor 10 shown in FIG. Fig.12The cavity 123a of each of the plurality of first to fourth band filters BF1, BF2, BF3, and BF4 of the image sensor 10f may be an absorption cavity. The absorption cavity 123a of each of the first to fourth band filters BF1, BF2, BF3, and BF4 may include a polymer-based pigment. For example, the absorption cavity 123a of each of the first band filter BF1 and the fourth band filter BF4 may include a first pigment that mainly transmits light in a first wavelength band (e.g., green light) and absorbs light in other wavelength bands (e.g., blue light and red light). In addition, the absorption cavity 123a of the second band filter BF2 may include a second pigment that mainly transmits light in a second band different from the first band (e.g., blue light) and absorbs light in other bands (e.g., green light and red light), and the absorption cavity 123a of the third band filter BF3 may include a third pigment that mainly transmits light in a third band (e.g., red light) and absorbs light in other bands (e.g., blue light and green light).

[0118] Light included in a wavelength band other than the transmission band of the absorption cavity 123a is absorbed while resonating in the first direction (eg, the Z-axis direction) within the absorption cavity 123a, and thus, Figure 2 Compared with the band filter array 120 of FIG. 1 , the thickness of the band filter array 120 a can be further reduced.

[0119] The thickness of the band filter array 120a can be relatively small, and therefore, crosstalk in the image sensor 10f can be reduced, and the size of the photosensitive device of the image sensor 10f can be further reduced. Therefore, an ultra-high resolution image sensor can be easily manufactured.

[0120] Figure 1 3 is a diagram showing an image sensor 10g including a microlens array 170 according to an embodiment. Figure 2 Compared with the image sensor 10 shown in , the image sensor 10g may further include a microlens array 170 disposed on the band filter array 120. The microlenses 171 included in the microlens array 170 may be arranged in one-to-one correspondence with the first to fourth band filters BF1, BF2, BF3, and BF4 included in the band filter array 120. However, the embodiment is not limited thereto. The microlenses 171 may be arranged to correspond to two or more band filters.

[0121] Fig.14 1 is a diagram showing an image sensor 10h including a single lens 180 according to an embodiment. Figure 2Compared with the image sensor 10 shown in FIG. 1 , the image sensor 10h may further include a single lens 180 on the band filter array 120. By disposing the single lens 180 for forming an image of a subject on an upper portion of the band filter array 120, the image sensor 10h may be implemented as a simple optical system.

[0122] Fig.11 , Fig.12 , Fig.13 and Fig.14 The image sensors 10e, 10f, 10g and 10h are each shown to include Figure 2 The band filter array 120, active layer 130, intermediate layer 140 and semiconductor substrate 110 shown in FIG. 1 are shown in FIG. 1 , but the embodiment is not limited thereto. For example, in some embodiments, Fig.11 , Fig.12 , Fig.13 and Fig.14 The image sensors 10e, 10f, 10g and 10h may each include Figures 5 to 8 At least one of the barrier ribs 135 or the anti-reflection layers 136 and 150 shown in FIG.

[0123] Fig.15 1 is a block diagram of an example of an electronic device ED01 including an image sensor 10. Fig.15 In the network environment ED00, the electronic device ED01 can communicate with another electronic device ED02 via a first network ED98 (e.g., a short-range wireless communication network, etc.), or can communicate with another electronic device ED04 and / or a server ED08 via a second network ED99 (e.g., a long-range wireless communication network, etc.). The electronic device ED01 can communicate with the electronic device ED04 via the server ED08. The electronic device ED01 may include a processor ED20, a memory ED30, an input device ED50, a sound output device ED55, a display device ED60, an audio module ED70, a sensor module ED76, an interface ED77, a tactile module ED79, a camera module ED80, a power management module ED88, a battery ED89, a communication module ED90, a subscriber identification module ED96, and / or an antenna module ED97. In the electronic device ED01, some of these components (e.g., the display device ED60, etc.) may be omitted, or other components may be added. Some components may be configured as an integrated circuit. For example, the sensor module ED76 (eg, a fingerprint sensor, an iris sensor, an illumination sensor, etc.) may be embedded and implemented in the display device ED60 (eg, a display, etc.).

[0124] The processor ED20 can control one or more components (e.g., hardware, software components, etc.) of the electronic device ED01 connected to the processor ED20 by executing software (e.g., program ED40, etc.), and can perform various data processing or operations. As part of the data processing or operation, the processor ED20 can load commands and / or data received from other components (e.g., sensor module ED76, communication module ED90, etc.) into the volatile memory ED32, can process the commands and / or data stored in the volatile memory ED32, and store the result data in the non-volatile memory ED34. The processor ED20 may include a main processor ED21 (e.g., a central processing unit, an application processor, etc.) and an auxiliary processor ED23 (e.g., a graphics processing unit, an image signal processor, a sensor hub processor, a communication processor, etc.), which can operate independently of the main processor ED21, or operate together with the main processor ED21. The auxiliary processor ED23 can use less power than the main processor ED21 and can perform a specified function.

[0125] The auxiliary processor ED23 can control functions and / or states related to some components in the electronic device ED01 (e.g., display device ED60, sensor module ED76, communication module ED90, etc.) on behalf of the main processor ED21 when the main processor ED21 is in an inactive state (e.g., a sleep state) or together with the main processor ED21 when the main processor ED21 is in an active state (e.g., an application execution state). The auxiliary processor ED23 (e.g., an image signal processor, a communication processor, etc.) can be implemented as a part of another component functionally related thereto (e.g., a camera module ED80, a communication module ED90, etc.).

[0126] The memory ED30 can store various data required by the components of the electronic device ED01 (e.g., the processor ED20, the sensor module ED76, etc.). The data may include, for example, input data and / or output data related to software (e.g., the program ED40, etc.), and commands related thereto. The memory ED30 may include a volatile memory ED32 and / or a non-volatile memory ED34. The non-volatile memory ED34 may include an internal memory ED36 fixedly installed in the electronic device ED01 and a removable external memory ED38.

[0127] The program ED40 may be stored as software in the memory ED30 , and may include an operating system ED42 , middleware ED44 , and / or applications ED46 .

[0128] The input device ED50 may receive commands and / or data to be used in components of the electronic device ED01 (e.g., processor ED20, etc.) from outside the electronic device ED01 (e.g., user, etc.). The input device ED50 may include a microphone, a mouse, a keyboard, and / or a digital pen (e.g., a stylus).

[0129] The sound output device ED55 can output sound signals to the outside of the electronic device ED01. The sound output device ED55 may include a speaker and / or a receiver. The speaker may be used for general purposes such as multimedia reproduction or recording playback, and the receiver may be used to receive calls. The receiver may be coupled as part of the speaker, or may be implemented as an independent device.

[0130] The display device ED60 can provide visual information to the outside of the electronic device ED01. The display device ED60 may include a display, a holographic device or a projector, and a control circuit for controlling the corresponding device. The display device ED60 may include a touch circuit configured to sense a touch, and / or a sensor circuit (e.g., a pressure sensor, etc.) configured to measure the strength of the force generated by the touch.

[0131] The audio module ED70 can convert sound into an electrical signal, and vice versa. The audio module ED70 can obtain sound through the input device ED50, or can output sound via the sound output device ED55, and / or a speaker and / or earphone of another electronic device (e.g., electronic device ED02, etc.) directly or wirelessly connected to the electronic device ED01.

[0132] The sensor module ED76 can sense the operating state (e.g., power, temperature, etc.) or the external environment state (e.g., user state, etc.) of the electronic device ED01, and can generate an electrical signal and / or data value corresponding to the sensed state. The sensor module ED76 can include a gesture sensor, a gyroscope sensor, a pressure sensor, a magnetic sensor, an acceleration sensor, a grip sensor, a proximity sensor, a color sensor, an infrared (IR) sensor, a biosensor, a temperature sensor, a humidity sensor, and / or an illumination sensor.

[0133] Interface ED77 may support one or more specified protocols that may be used to directly or wirelessly connect electronic device ED01 to another electronic device (e.g., electronic device ED02, etc.). Interface ED77 may include a high-definition multimedia interface (HDMI), a universal serial bus (USB) interface, an SD card interface, and / or an audio interface.

[0134] The connection terminal ED78 may include a connector through which the electronic device ED01 may be physically connected to another electronic device (eg, electronic device ED02, etc.) The connection terminal ED78 may include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (headphone connector, etc.).

[0135] The haptic module ED79 may convert the electrical signal into mechanical stimulation (eg, vibration, motion, etc.) or electrical stimulation that the user may sense through tactile or kinesthetic sensation. The haptic module ED79 may include a motor, a piezoelectric device, and / or an electrical stimulation device.

[0136] The camera module ED80 can capture still images and videos. The camera module ED80 may include a lens assembly having one or more lenses, Figure 1 The camera module ED80 may include an image sensor 10, an image signal processor, and / or a flash. The lens assembly included in the camera module ED80 may collect light emitted from an object to be captured.

[0137] The power management module ED88 may manage power supplied to the electronic device ED01. The power management module ED88 may be implemented as a part of a power management integrated circuit (PMIC).

[0138] The battery ED89 can supply power to the components of the electronic device ED01. The battery ED89 may include a non-rechargeable primary battery, a rechargeable secondary battery, and / or a fuel cell.

[0139] The communication module ED90 can support the establishment of a direct (e.g., wired) communication channel and / or a wireless communication channel between the electronic device ED01 and other electronic devices (e.g., electronic device ED02, electronic device ED04, server ED08, etc.), and the execution of communication through the established communication channel. The communication module ED90 can operate independently of the processor ED20 (e.g., an application processor, etc.), and can include one or more communication processors that support direct communication and / or wireless communication. The communication module ED90 can include a wireless communication module ED92 (e.g., a cellular communication module, a short-range wireless communication module, a global navigation satellite system (GNSS) communication module) and / or a wired communication module ED94 (e.g., a local area network (LAN) communication module, a power line communication module, etc.). Among these communication modules, the corresponding communication module can communicate with other electronic devices via a first network ED98 (e.g., a short-range communication network such as Bluetooth, WiFi Direct or Infrared Data Association (IrDA)) or a second network ED99 (e.g., a long-range communication network such as a cellular network, the Internet or a computer network (LAN, WAN, etc.)). The various communication modules described above may be integrated into one component (e.g., a single chip, etc.), or may be implemented as multiple components separated from each other (e.g., multiple chips). The wireless communication module ED92 may identify and authenticate the electronic device ED01 in the communication network (e.g., the first network ED98 and / or the second network ED99) by using the subscriber information (e.g., International Mobile Subscriber Identifier (IMSI), etc.) stored in the subscriber identification module ED96.

[0140] The antenna module ED97 can send signals and / or power to the outside (e.g., another electronic device, etc.), and / or receive signals and / or power from the outside (e.g., another electronic device, etc.). The antenna may include a radiator formed as a conductive pattern on a substrate (e.g., PCB, etc.). The antenna module ED97 may include one or more antennas. When the antenna module ED97 includes multiple antennas, an antenna suitable for the communication type used in the communication network (e.g., the first network ED98 and / or the second network ED99) can be selected from the multiple antennas by the communication module ED90. Signals and / or power can be transmitted between the communication module ED90 and another electronic device via the selected antenna. Other components other than the antenna (e.g., RFIC, etc.) may be included as part of the antenna module ED97.

[0141] Some of these components can be connected to each other via a communication method between peripheral devices (e.g., bus, general purpose input and output (GPIO), serial peripheral interface (SPI), mobile industry processor interface (MIPI), etc.) and can exchange signals (e.g., commands, data, etc.).

[0142] Commands or data can be sent or received between the electronic device ED01 and the external electronic device ED04 via the server ED08 connected to the second network ED99. The other electronic devices ED02 and ED04 can be devices of the same or different types as the electronic device ED01. All or some of the operations performed in the electronic device ED01 can be performed in one or more devices among the other electronic devices ED02, ED04 and ED08. For example, when the electronic device ED01 must perform a certain function or service, the electronic device ED01 can request one or more other electronic devices to perform part or all of the function or service instead of performing the function or service itself. The one or more electronic devices that receive the request perform additional functions or services related to the request, and can transmit the execution results to the electronic device ED01. To this end, for example, cloud computing, distributed computing or client-server computing technology can be used.

[0143] Fig.16 yes Fig.15 Block diagram of camera module ED80. Fig.16 The camera module ED80 may include a lens assembly CM10, a flash CM20, an image sensor 20 (eg, Figure 2 The camera module ED80 may include an image sensor 10, etc.), an image stabilizer CM40, a memory CM50 (e.g., a buffer memory, etc.), and / or an image signal processor CM60. The lens assembly CM10 may collect light emitted from an object for image capture. The camera module ED80 may include a plurality of lens assemblies CM10, and in this case, the camera module ED80 may include a dual camera, a 360-degree camera, or a spherical camera. Some of the plurality of lens assemblies CM10 may have the same lens properties (e.g., viewing angle, focal length, autofocus, F number, optical zoom, etc.) or different lens properties. The lens assembly CM10 may include a wide-angle lens or a telephoto lens.

[0144] The flash CM20 may emit light for enhancing light emitted or reflected from an object. The flash CM20 may include one or more light emitting diodes (e.g., red-green-blue (RGB) LEDs, white LEDs, infrared LEDs, ultraviolet LEDs, etc.) and / or xenon lamps. The image sensor 20 may include a reference Figures 1 to 3 , Figures 5 to 8 as well as Figures 11 to 14The image sensor 20 may be a device that can convert light emitted or reflected from an object and transmitted through the lens assembly CM10 into an electrical signal, thereby obtaining an image corresponding to the object. The image sensor 20 may include one or more sensors selected from image sensors 20 having different properties (e.g., an RGB sensor, a black and white (BW) sensor, an IR sensor, or a UV sensor). Each sensor included in the image sensor 20 may be implemented by a charge coupled device (CCD) sensor and / or a complementary metal oxide semiconductor (CMOS) sensor.

[0145] Based on or in response to the movement of the camera module ED80 or the electronic device ED01 including the camera module ED80, the image stabilizer CM40 may move one or more lenses included in the lens assembly CM10 or the image sensor 20 in a specific direction, or control the operating characteristics of the image sensor 20 (e.g., adjusting the readout timing, etc.) to compensate for the negative effects of the movement. The image stabilizer CM40 may sense the movement of the camera module ED80 or the electronic device ED01 by using at least one of a gyro sensor and an acceleration sensor disposed inside or outside the camera module ED80. The image stabilizer CM40 may be implemented as an optical type.

[0146] The memory CM50 can store part or all of the data of the image obtained by the image sensor 20 for subsequent image processing operations. For example, when multiple images are obtained at high speed, only the low-resolution image is displayed, while the obtained raw data (Bayer pattern data, high-resolution data, etc.) is stored in the memory CM50. Then, the memory CM50 can be used to send the raw data of the selected (e.g., user selection, etc.) image to the image signal processor CM60. The memory CM50 can be incorporated into the memory ED30 of the electronic device ED01, or configured as a separate memory that operates independently.

[0147] The image signal processor CM60 may perform image processing on an image obtained by the image sensor 20 or image data stored in the memory CM50. Image processing may include depth map generation, three-dimensional modeling, panorama generation, feature point extraction, image synthesis and / or image compensation (e.g., noise reduction, resolution adjustment, brightness adjustment, blurring, sharpening, softening, etc.). The image signal processor CM60 may perform control (e.g., exposure time control, readout timing control, etc.) on the elements included in the camera module ED80 (e.g., image sensor 20, etc.). The image processed by the image signal processor CM60 may be stored again in the memory CM50 for additional processing or provided to an external element of the camera module ED80 (e.g., memory ED30, display device ED60, electronic device ED02, electronic device ED04, server ED08, etc.). The image signal processor CM60 may be incorporated into the processor ED20, or may be configured as a separate processor that operates independently of the processor ED20. When the image signal processor CM60 is configured as a processor separate from the processor ED20 , an image processed by the image signal processor CM60 may be subjected to additional image processing by the processor ED20 and then displayed by the display device ED60 .

[0148] The electronic device ED01 may include a plurality of camera modules ED80 having different properties or functions. In this case, one of the camera modules ED80 may be a wide-angle camera, and another may be a telephoto camera. Similarly, one of the camera modules ED80 may be a front camera, and another may be a rear camera.

[0149] The image sensor 20 according to some embodiments may be applied to Fig.17 The mobile phone or smart phone 410 shown in Fig.18 The tablet computer or smart tablet computer 420 shown in Fig.19 The digital camera or video camera 430 shown in Fig. 20 The laptop computer 440 shown in Fig.21 4 or smart TV 450, etc. For example, smart phone 410 or smart tablet 420 may include a plurality of high-resolution cameras, each having a high-resolution image sensor 20 mounted thereon. Depth information of an object in an image may be extracted by using a high-resolution camera, defocus of the image may be adjusted, or an object in the image may be automatically recognized.

[0150] In addition, the image sensor 20 can be applied to Fig. 22 The smart refrigerator 460 shown in Fig.23 The security camera 470 shown in Fig.24 The robot 480 shown in Fig.25490 shown in the figure. For example, the smart refrigerator 460 can automatically identify the food in the refrigerator by using the image sensor 20, and notify the user through the smart phone of the presence of specific food, the type of food put in or taken out, etc. The security camera 470 can provide ultra-high resolution images, and can identify objects or people in the image in a dark environment by using high sensitivity. The robot 480 can be set up at a disaster or industrial site that humans cannot directly enter, and can provide high-resolution images. The medical camera 490 can provide high-resolution images for diagnosis or surgery, and thus the field of view can be dynamically adjusted.

[0151] In addition, the image sensor 20 can be applied to Fig.26 The vehicle 500 shown in FIG. The vehicle 500 may include a plurality of vehicle-mounted cameras 510, 520, 530, and 540 arranged at various positions. Each of the vehicle-mounted cameras 510, 520, 530, and 540 may include an image sensor according to an embodiment. The vehicle 500 may provide the driver with various information related to the interior or periphery of the vehicle 500 by using the vehicle-mounted cameras 510, 520, 530, and 540, so that objects or people in the image may be automatically recognized, and information required for autonomous driving may be provided.

[0152] It should be understood that the embodiments described herein should be considered only in a descriptive sense and not for limiting purposes. The description of features or aspects in each embodiment should generally be considered to be applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes in form and details may be made without departing from the spirit and scope defined by the appended claims.

Claims

1. An image sensor, comprising: A semiconductor substrate having a plurality of photosensitive devices integrated therein; a band filter array including a plurality of band filters, wherein each of the plurality of band filters is configured to resonate light included in a specific wavelength band among incident light and output the resonated light toward the semiconductor substrate; an active layer between the semiconductor substrate and the band filter array and configured to generate excitons using the resonant light received from the band filter array; and An intermediate layer is between the active layer and the semiconductor substrate and is configured to transmit at least one of the resonant light or the excitons to the semiconductor substrate.

2. The image sensor according to claim 1, wherein: The active layer includes a singlet fission material, and an energy band gap of the singlet fission material is equal to or greater than an energy band gap of an inorganic semiconductor of each of the plurality of photosensitive devices.

3. The image sensor according to claim 2, wherein: The active layer also includes a metal porphyrin-based phosphorescent dopant.

4. The image sensor according to claim 3, wherein: The metal porphyrin-based phosphorescent dopant has an energy band gap greater than or equal to an energy band gap of a photosensitive device included in the image sensor.

5. The image sensor according to claim 1, wherein: The intermediate layer includes at least one of oxide, nitride, oxynitride, fluoride or oxyfluoride.

6. The image sensor according to claim 1, wherein: The thickness of the active layer is greater than the thickness of the intermediate layer.

7. The image sensor according to claim 6, wherein: The thickness of the active layer is 5 times or more than the thickness of the intermediate layer.

8. The image sensor according to claim 1, wherein: The thickness of the active layer is in the range of 50 nm or less.

9. The image sensor according to claim 1, wherein: The thickness of the intermediate layer is in the range of 5 nm or less.

10. The image sensor according to claim 1, in, The frequency band filter array comprises: A first band filter configured to resonate first light included in a first wavelength band among the incident light; and a second band filter configured to resonate second light in the second wavelength band among the incident light, wherein the active layer includes a first active layer, the first active layer is configured to overlap with the first band filter in a thickness direction of the band filter array, and is configured to generate excitons using a resonant first light, and The active layer further includes a second active layer, the second active layer is configured to overlap with the second band filter in the thickness direction of the band filter array, and is configured to generate excitons using the resonant second light.

11. The image sensor according to claim 10, further comprising: Barrier ribs are between the first active layer and the second active layer.

12. The image sensor according to claim 11, wherein: A refractive index of the barrier rib is smaller than a refractive index of the first active layer and a refractive index of the second active layer.

13. The image sensor according to claim 11, wherein: The barrier ribs have a refractive index in the range of 2 or less.

14. The image sensor according to claim 1, wherein: The frequency band filter array comprises: a third frequency band filter configured to resonate third light included in a third wavelength band among the incident light; and a fourth band filter configured to resonate fourth light included in a fourth wavelength band in the incident light, wherein the third frequency band filter and the active layer overlap in the thickness direction of the frequency band filter array, and Wherein, the fourth frequency band filter and the active layer do not overlap in the thickness direction of the frequency band filter array. 15 . The image sensor according to claim 14 , further comprising an anti-reflection layer configured to overlap the fourth band filter in the thickness direction of the band filter array.

16. The image sensor according to claim 15, wherein: The anti-reflection layer includes at least one of hafnium oxide, silicon oxide, aluminum oxide or silicon nitride.

17. The image sensor according to claim 1, further comprising: An anti-reflection layer between the band filter array and the active layer.

18. The image sensor according to claim 1, wherein: Each band filter in the band filter array includes a pigment that absorbs light in a wavelength band different from the specific wavelength band.

19. An electronic device comprising: an image sensor configured to receive light from an object and convert the light into an electrical signal; as well as a processor configured to generate an image corresponding to the object using the electrical signal received from the image sensor, Wherein, the image sensor comprises: A semiconductor substrate having a plurality of photosensitive devices integrated therein; a band filter array including a plurality of band filters, wherein each of the plurality of band filters is configured to resonate light included in a specific wavelength band among incident light and output the resonated light toward the semiconductor substrate; an active layer between the semiconductor substrate and the band filter array and configured to generate excitons using the resonant light received from the band filter array; and An intermediate layer is between the active layer and the semiconductor substrate and is configured to transmit at least one of the resonant light and the excitons to the semiconductor substrate.

20. The electronic device according to claim 19, wherein: The image sensor further includes an anti-reflection layer disposed between the band filter array and the active layer.

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