Micro-nano structure substrate, preparation method thereof and micro-nano structure device

Abstract

The invention discloses a micro-nano structure substrate and a preparation method thereof, and a micro-nano structure device, and relates to the technical field of micro-nano processing. The micro-nano structure substrate comprises: a glass substrate; the first film layer is arranged on one side of the glass substrate, the first film layer comprises a plurality of first areas and a second area, the first areas are arranged in an array, the second area surrounds the first areas, and the first areas and the second area are different in thickness; wherein the first area and / or the second area comprise / comprises a micro-nano structure, the density of the surface layer of the micro-nano structure is smaller than that of the bottom layer of the micro-nano structure, and the bottom layer is located on the side, close to the glass substrate, of the surface layer.

Description

Technical Field

[0001] The present disclosure relates to the field of micro-nano processing technology, and in particular to a micro-nano structure substrate and a preparation method thereof, and a micro-nano structure device. Background Art

[0002] Glass is an amorphous, inorganic, non-metallic material, whose main components are silicon dioxide and other oxides. Glass is generally made of quartz sand, soda ash, feldspar and limestone, etc., which are mixed, melted at high temperature, homogenized, processed and shaped, and then annealed. Glass is widely used in construction, daily use, art, medicine, chemistry, electronics, instrumentation, engineering and biochemistry, and has broad application prospects in the biochemical field. Summary of the invention

[0003] The present disclosure provides a micro-nanostructure substrate, comprising:

[0004] glass substrate; and

[0005] A first film layer is disposed on one side of the glass substrate, the first film layer comprising: a plurality of first regions arranged in an array, and a second region surrounding the first region, the first region and the second region having different thicknesses;

[0006] The first region and / or the second region comprises a micro-nano structure, and the surface density of the micro-nano structure is less than the bottom density of the micro-nano structure, and the bottom layer is located on a side of the surface layer close to the glass substrate.

[0007] In some embodiments, the micro-nano structure includes a plurality of irregularly arranged substructures, and at least two of the substructures have different heights along a first direction, where the first direction is a direction from the glass substrate to the first film layer.

[0008] In some embodiments, the thickness of the first region is less than the thickness of the second region; and

[0009] The substructure includes a pit, the pit is located on a surface of the first region facing away from the glass substrate, and the pit is recessed toward a side close to the glass substrate.

[0010] In some embodiments, the thickness of the first region gradually increases from the center of the first region to the edge of the first region.

[0011] In some embodiments, the thickness of the first region is less than the thickness of the second region; and

[0012] The substructure includes a first protrusion, the first protrusion is located on a surface of the second region away from the glass substrate, and the first protrusion protrudes toward a side away from the glass substrate.

[0013] In some embodiments, the first region is a through hole that penetrates the first film layer along the first direction.

[0014] In some embodiments, the thickness of the first region is greater than the thickness of the second region, and the thickness of the second region is greater than or equal to 0; and

[0015] The micro-nano structure includes second protrusions, and different second protrusions are located in different first regions on the surface away from the glass substrate, and the second protrusions protrude toward a side away from the glass substrate.

[0016] In some embodiments, the shape of the second protrusion includes at least one of the following: columnar, conical, hemispherical, and needle-shaped.

[0017] In some embodiments, the second protrusion is columnar in shape, and a side of the second protrusion facing the second region has a ridge-shaped protrusion, and the ridge-shaped protrusion extends along a second direction, and the second direction is a direction from a bottom edge of the second protrusion close to the glass substrate to a top edge of the second protrusion away from the glass substrate.

[0018] In some embodiments, a material of the first film layer includes at least one of the following: silicon oxide, silicon nitride, and amorphous silicon.

[0019] The present disclosure provides a micro-nano structure device, comprising the micro-nano structure substrate as described in any embodiment.

[0020] The present disclosure provides a method for preparing a micro-nanostructure substrate, comprising:

[0021] providing a glass substrate;

[0022] A first film layer is formed on one side of the glass substrate to obtain the micro-nano structure substrate, wherein the first film layer includes: a plurality of first regions arranged in an array, and a second region surrounding the first region, the first region and the second region have different thicknesses, the first region and / or the second region include a micro-nano structure, and the surface density of the micro-nano structure is less than the bottom density of the micro-nano structure, and the bottom layer is located on the side of the surface layer close to the glass substrate.

[0023] In some embodiments, the micro-nano structure includes a plurality of irregularly arranged pits and is located on a surface of the first region away from the glass substrate, and the step of forming a first film layer on one side of the glass substrate includes:

[0024] forming a first material layer and a first photoresist layer in sequence on one side of the glass substrate;

[0025] Using a first mask, exposing and developing the first photoresist layer to form a first mask pattern, wherein the orthographic projection of the first mask pattern on the glass substrate covers the orthographic projection of the second region on the glass substrate;

[0026] The first material layer not covered by the first mask pattern is dry-etched to remove the remaining first mask pattern to form the first film layer.

[0027] In some embodiments, the micro-nano structure includes a plurality of irregularly arranged first protrusions, and is located on a surface of the second region away from the glass substrate, and the step of forming a first film layer on one side of the glass substrate includes:

[0028] forming a second material layer, a first metal layer, and a second photoresist layer in sequence on one side of the glass substrate;

[0029] Using a second mask, exposing and developing the second photoresist layer to form a second mask pattern, wherein the second mask pattern and the orthographic projection of the second region on the glass substrate are both located within the first region;

[0030] Performing dry etching on the first metal layer and the second material layer outside the first region to form a first region of the first film layer;

[0031] removing the remaining second mask pattern;

[0032] The first metal layer within the first region is wet-etched to form a second region of the first film layer.

[0033] In some embodiments, the micro-nano structure includes a second protrusion, and different second protrusions are located in different first regions away from the surface of the glass substrate. The step of forming a first film layer on one side of the glass substrate includes:

[0034] forming a third material layer, a second metal layer and a third photoresist layer in sequence on one side of the glass substrate;

[0035] Using a third mask, exposing and developing the third photoresist layer to form a third mask pattern, wherein the third mask pattern and the orthographic projection of the first area on the glass substrate are both located in the second area;

[0036] Performing dry etching on the second metal layer and the third material layer to simultaneously form a first region and a second region of the first film layer, wherein the second metal layer and the third material layer outside the second region are dry-etched to form the second region, and the mask pattern within the second region, or the mask pattern and the second metal layer within the second region, or the mask pattern, the second metal layer, and the third material layer within the second region are dry-etched to form the first region;

[0037] The remaining second metal layer is removed by wet etching.

[0038] The above description is only an overview of the technical solution of the present disclosure. In order to more clearly understand the technical means of the present disclosure, it can be implemented according to the contents of the specification. In order to make the above and other purposes, features and advantages of the present disclosure more obvious and easy to understand, the specific implementation methods of the present disclosure are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or related technologies, the following briefly introduces the drawings required for use in the embodiments or related technical descriptions. Obviously, the drawings described below are some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. It should be noted that the proportions in the drawings are only for illustration and do not represent the actual proportions.

[0040] Figure 1 The cross-sectional structure diagram of a micro-nanostructure substrate provided by the present disclosure is exemplarily shown;

[0041] Figure 2a The schematic diagram of the partial top view structure of the first micro-nanostructure substrate provided by the present disclosure is exemplarily shown;

[0042] Figure 2b The schematic diagram of the partial cross-sectional structure of the first micro-nanostructure substrate provided by the present disclosure is exemplarily shown;

[0043] Figure 2c A schematic diagram of dividing the first area into a plurality of concentric rings is exemplarily shown;

[0044] Figure 3a A partial top view structural diagram of a second micro-nanostructure substrate provided by the present disclosure is exemplarily shown;

[0045] Figure 3b The schematic diagram of the partial cross-sectional structure of the second micro-nanostructure substrate provided by the present disclosure is exemplarily shown;

[0046] Figure 4aThe schematic diagram of the partial top view structure of the third micro-nanostructure substrate provided by the present disclosure is exemplarily shown;

[0047] Figure 4b The schematic diagram of the partial cross-sectional structure of the third micro-nanostructure substrate provided by the present disclosure is exemplarily shown;

[0048] Figure 5a A partial top view structural diagram of a fourth micro-nanostructure substrate provided by the present disclosure is exemplarily shown;

[0049] Figure 5b The schematic diagram of the partial cross-sectional structure of the fourth micro-nanostructure substrate provided by the present disclosure is exemplarily shown;

[0050] Figure 6a The schematic diagram of the partial top view structure of the fifth micro-nanostructure substrate provided by the present disclosure is exemplarily shown;

[0051] Figure 6b The partial cross-sectional structure schematic diagram of the fifth micro-nanostructure substrate provided by the present disclosure is exemplarily shown;

[0052] Figure 7 The following is a flowchart showing a method for preparing a micro-nanostructure substrate provided by the present disclosure;

[0053] Figure 8 The flowchart of the steps of the preparation method of the first film layer provided by the present disclosure is exemplarily shown;

[0054] Fig. 9 The flowchart of the steps of the second method for preparing the first film layer provided by the present disclosure is exemplarily shown;

[0055] Fig.10 The flowchart of the steps of the third method for preparing the first film layer provided by the present disclosure is exemplarily shown;

[0056] Fig.11 The table of test results of the surface antibacterial performance of the micro-nanostructure substrate provided by the present disclosure is shown exemplarily;

[0057] Fig.12 The solar energy absorption efficiency test result table of the micro-nanostructure substrate provided by the present disclosure is exemplarily shown;

[0058] Fig.13 The test results of the surface biochemical modification effect of the micro-nanostructure substrate provided by the present disclosure are shown exemplarily. DETAILED DESCRIPTION

[0059] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0060] Micro-nano processing technology refers to the technology for optimizing the design, processing, assembly, system integration and application of sub-millimeter, micron and nanometer-scale components and parts or systems composed of these components. The current micro-nano processing technology is usually implemented on a silicon base and cannot be mass-produced.

[0061] Glass is an amorphous, inorganic, non-metallic material, whose main components are silicon dioxide and other oxides. It is generally made of quartz sand, soda ash, feldspar and limestone, etc., which are mixed, melted at high temperature, homogenized, processed and annealed. It is widely used in the fields of architecture, daily use, art, medicine, chemistry, electronics, instrumentation, engineering, etc. The surface of general-purpose glass has good perspective and light transmission properties, high chemical stability, and has broad application prospects in the biochemical field.

[0062] Usually the glass surface is a smooth plane. In some scenarios, micro-nanostructure modification on the glass surface can cause huge changes in the material properties and functions, achieving better performance.

[0063] like Figures 1 to 6b As shown, the micro-nano structure substrate 100 provided by the present disclosure includes: a glass substrate 101; and a first film layer 102, which is arranged on one side of the glass substrate 101, and the first film layer 102 includes: a plurality of first regions 111 arranged in an array, and a second region 112 surrounding the first region 111, and the thickness of the first region 111 and the second region 112 are different; wherein the first region 111 and / or the second region 112 include a micro-nano structure MS, and the surface density of the micro-nano structure MS is less than the bottom layer density of the micro-nano structure MS, and the bottom layer is located on the side of the surface layer close to the glass substrate 101.

[0064] like Figures 1 to 6b As shown, the first direction F1 is the direction from the glass substrate 101 to the first film layer 102. The thickness of the first region 111 is, for example, the average thickness of multiple locations in the first region 111 in the first direction F1. The thickness of the second region 112 is, for example, the average thickness of multiple locations in the second region 112 in the first direction F1.

[0065] Exemplarily, the first region 111 and / or the second region 112 may be prepared by photolithography. Since the first region 111 and / or the second region 112 are prepared by photolithography, during the preparation process, the mask can be designed according to actual application requirements to form different first regions 111 and / or second regions 112, so as to select the optimal design for different application scenarios.

[0066] For example, the micro-nano structure MS can be formed by etching. By etching, a plurality of holes can be generated on the surface of the micro-nano structure MS, so that the surface density of the micro-nano structure MS is lower than the bottom density.

[0067] The embodiment of the present disclosure forms a micro-nano structure MS on a glass substrate 101. On the one hand, it can realize large-scale mass production using a glass substrate production line as a platform. On the other hand, the micro-nano structure MS can improve the performance of the micro-nano structure substrate 100, such as surface biochemical modification efficiency, surface antibacterial performance, etc., to obtain a substrate with better performance.

[0068] For example, since the surface of ordinary glass is a mixture and its chemical properties are relatively stable, it is not conducive to the modification of chemical probes or biological macromolecules on the surface. The embodiment of the present disclosure forms a micro-nano structure MS on the glass substrate 101, which is beneficial to the activation of active sites on the surface on the one hand, and on the other hand, increases the specific surface area and forms more binding sites, thereby making it easier for chemical probes or biological macromolecules to bind to the surface of the micro-nano structure substrate 100, thereby improving the efficiency of surface biochemical modification.

[0069] For example, in the micro-nanostructure substrate 100 provided by the present disclosure, if bacteria are attached to the surface of the substrate, the surface of the bacteria is in contact with the micro-nanostructure MS, and due to the gravity of the bacteria themselves and the adhesion between the bacteria and the micro-nanostructure MS, the bacterial cell wall is easily pierced, causing the internal osmotic pressure to change and the bacteria to die quickly; or the adhered bacteria move on the micro-nanostructure MS, and under the combined action of bending and shear stress, the bacterial cell membrane structure ruptures, causing the bacteria to lose their activity, thereby improving the surface antibacterial performance of the micro-nanostructure substrate 100.

[0070] In the micro-nanostructure substrate 100 provided by the present disclosure, since the surface density of the micro-nanostructure MS is less than the bottom density of the micro-nanostructure MS, the relatively rough surface of the micro-nanostructure MS can further activate active sites and further increase the specific surface area.

[0071] In some embodiments, the material of the first film layer 102 includes at least one of the following: inorganic silicon materials such as silicon oxide, silicon nitride, and amorphous silicon.

[0072] Exemplarily, the thickness of the first film layer 102 is less than or equal to 1000 nanometers.

[0073] In a specific implementation, the micro-nano structure MS of the micro-nano structure substrate 100 provided in the present disclosure can be configured in the following three ways, for example:

[0074] In the first implementation and the second implementation, if Figures 2a to 3b As shown, the micro-nano structure MS includes a plurality of irregularly arranged substructures 201 , and at least two substructures 201 have different heights along the first direction F1 .

[0075] In the first implementation and the second implementation, illustratively, as Figure 2a and Figure 3a As shown, the thickness of the first region 111 is smaller than the thickness of the second region 112 .

[0076] In the first implementation, Figure 2a and Figure 2b As shown, the substructure 201 includes a pit 211 . The pit 211 is located on a surface of the first region 111 away from the glass substrate 101 , and the pit 211 is recessed toward a side close to the glass substrate 101 .

[0077] For example, Figure 2a As shown, the substructure 201 is the pit 211, and the height of the substructure 201 along the first direction F1 is the depth of the pit 211. Figure 2a As shown, a plurality of irregularly arranged pits 211 are located in the first area 111. Figure 2b As shown, at least two pits 211 located in one first region 111 have different recessed depths.

[0078] Exemplarily, the depth of the pit 211 along the first direction F1 is about several hundred nanometers, such as 100 nanometers, 150 nanometers, 300 nanometers, etc.

[0079] Exemplarily, in the first implementation, the orthographic projection shape of the pit 211 on the glass substrate 101 may include a circle, an ellipse or other circular-like shape, or a rectangle or other polygonal shape, and its size may be, for example, tens of nanometers, such as 10 nanometers, 15 nanometers, 50 nanometers, etc.

[0080] Exemplarily, in the first implementation, the distance between two adjacent pits 211 is about several nanometers, such as 2 nanometers, 5 nanometers, 8 nanometers, etc.

[0081] For example, in a first implementation, the pit 211 may be prepared by using an inductively coupled plasma (ICP) dry etching method.

[0082] In the first implementation, Figure 2a As shown, the thickness of the first region 111 gradually increases from the center of the first region 111 to the edge of the first region 111 .

[0083] For example, Figure 2c As shown, the first region 111 may be divided into a plurality of concentric rings R, and the average thickness of the first film layer 102 along the first direction F1 in the concentric rings R gradually increases from the center A1 of the first region 111 to the edge A2 of the first region 111 .

[0084] Illustratively, in the first implementation, since the center etching rate is higher and the edge etching rate is lower during ICP dry etching, the center of the first region 111 is etched deeper and thinner, while the edge etching is shallower and thicker, forming a bowl-shaped first region 111.

[0085] In the second implementation, Figure 3a As shown, the substructure 201 includes a first protrusion 221 . The first protrusion 221 is located on a surface of the second region 112 facing away from the glass substrate 101 . The first protrusion 221 protrudes toward a side facing away from the glass substrate 101 .

[0086] For example, Figure 3a As shown, the substructure 201 is the first protrusion 221, and the height of the substructure 201 along the first direction F1 is the height of the first protrusion 221. Figure 3a As shown, a plurality of irregularly arranged first protrusions 221 are located in the second area 112. Figure 3b As shown, at least two first protrusions 221 located in one second region 112 have different heights.

[0087] Exemplarily, the shape of the first protrusion 221 includes at least one of the following: columnar, conical, hemispherical and needle-shaped. The columnar shape may be, for example, a cylindrical, triangular prism, square prism, trapezoidal prism, etc., and the conical shape may be, for example, a conical, triangular pyramid, square pyramid, etc.

[0088] The light capturing efficiency of the micro-nano structure MS is improved through the top of the cone-shaped or needle-shaped first protrusion 221 , and the light residence time is prolonged through the bottom of the first protrusion 221 , thereby achieving better solar energy utilization.

[0089] Exemplarily, a height of the first protrusion 221 along the first direction F1 is greater than or equal to 100 nanometers and less than or equal to 400 nanometers, such as 100 nanometers, 300 nanometers, 400 nanometers, etc.

[0090] Illustratively, in the second implementation, the orthographic projection size of the first protrusion 221 on the glass substrate 101 is greater than or equal to 10 nanometers and less than or equal to 50 nanometers, such as 10 nanometers, 40 nanometers, 50 nanometers, etc.

[0091] For example, in the second implementation, the spacing between two adjacent first protrusions 221 is greater than or equal to 1 nanometer and less than or equal to 20 nanometers, such as 1 nanometer, 5 nanometers, 15 nanometers, etc.

[0092] In the second implementation, Figure 3a As shown, the first region 111 is a through hole penetrating the first film layer 102 along the first direction F1. That is, the thickness of the first region 111 along the first direction F1 is 0.

[0093] Illustratively, in the second implementation, ICP dry etching is used to etch the first region 111 to form a through hole.

[0094] Illustratively, in the second implementation, a wet etching process may be used to form the first protrusions 221 . The shape, size and distribution of the first protrusions 221 prepared by the wet etching process are relatively uniform, further improving the performance of the micro-nanostructure substrate 100 .

[0095] In the third implementation, Figures 4a to 6b As shown in any one of the figures, the thickness of the first region 111 is greater than the thickness of the second region 112 , and the thickness of the second region 112 is greater than or equal to zero.

[0096] For example, Figures 4a to 6b As shown in any one of the figures, the micro-nano structure MS includes second protrusions 231 , and different second protrusions 231 are located on different surfaces of the first region 111 away from the glass substrate 101 , and the second protrusions 231 protrude toward the side away from the glass substrate 101 .

[0097] like Figures 4a to 6b As shown in any one of the figures, one second protrusion 231 is correspondingly formed in one first area 111 , and a plurality of second protrusions 231 are arranged in an array.

[0098] Exemplarily, a height of the second protrusion 231 along the first direction F1 is greater than or equal to 400 nanometers and less than or equal to 800 nanometers, for example, 400 nanometers, 500 nanometers, 800 nanometers, etc.

[0099] Illustratively, in the third implementation, the orthographic projection size of the second protrusion 231 on the glass substrate 101 is greater than or equal to 350 nanometers and less than or equal to 1000 nanometers, such as 350 nanometers, 400 nanometers, 1000 nanometers, etc.

[0100] Exemplarily, in the third implementation, the distance between two adjacent second protrusions 231 is greater than or equal to 100 nanometers and less than or equal to 1000 nanometers, such as 100 nanometers, 500 nanometers, 1000 nanometers, etc.

[0101] Illustratively, in the third implementation, the second protrusion 231 may be prepared by ICP dry etching.

[0102] In a third implementation, the shape of the second protrusion 231 includes at least one of the following: columnar, conical, hemispherical, and needle-shaped. The columnar shape may be, for example, a cylindrical shape, a triangular cylindrical shape, a square cylindrical shape, a trapezoidal cylindrical shape, etc. The conical shape may be, for example, a conical shape, a triangular pyramid shape, a square pyramid shape, etc.

[0103] For example, Figure 5a and Figure 5b As shown, the longitudinal cross-section of the second protrusion 231 is, for example, a trapezoid, the long side of the trapezoid is arranged close to the glass substrate 101, and the short side of the trapezoid is arranged away from the glass substrate 101. The longitudinal cross-section is a cross-section of the second protrusion 231 perpendicular to the glass substrate 101. The size of the short side of the trapezoid can be, for example, greater than 0 and less than or equal to 1000 nanometers, such as 500 nanometers, 800 nanometers, 1000 nanometers, etc.

[0104] The light capture efficiency of the micro-nano structure MS is improved through the top of the conical or needle-shaped micro-nano structure MS, and the light residence time is extended through the bottom of the micro-nano structure MS, so as to achieve better solar energy utilization.

[0105] In the third implementation, Figure 5a and Figure 5b As shown, the second protrusion 231 is columnar in shape, and the side of the second protrusion 231 facing the second area 112 has a ridge-shaped protrusion 301, and the ridge-shaped protrusion 301 extends along the second direction, and the second direction is the direction from the bottom edge of the second protrusion 231 close to the glass substrate 101 to the top edge of the second protrusion 231 away from the glass substrate 101.

[0106] For example, Figure 5a and Figure 5b As shown, a plurality of ridge-shaped protrusions 301 may be arranged at intervals along the circumferential direction of the side surface of the second protrusion 231 , and a groove extending along the second direction is formed between two adjacent ridge-shaped protrusions 301 .

[0107] The present disclosure provides a micro-nano structure device, including the micro-nano structure substrate 100 as described in any of the above embodiments.

[0108] Illustratively, the micro-nano structure devices provided by the present disclosure include, but are not limited to, micro-nano fluidic chips, micro-nano fluidic devices, solar chips, solar devices, micro-nano biochips, micro-nano biodevices, and the like.

[0109] Those skilled in the art can understand that the micro-nanostructure device provided by the present disclosure has the advantages of the micro-nanostructure substrate 100 described in any of the above embodiments.

[0110] like Figure 7 As shown, the present disclosure provides a method for preparing a micro-nanostructure substrate 100, comprising:

[0111] Step S101: providing a glass substrate 101;

[0112] Step S102: forming a first film layer 102 on one side of the glass substrate 101 to obtain the micro-nanostructure substrate 100, wherein the first film layer 102 includes: a plurality of first regions 111 arranged in an array, and a second region 112 surrounding the first region 111, the first region 111 and the second region 112 have different thicknesses, the first region 111 and / or the second region 112 include a micro-nanostructure MS, and the surface density of the micro-nanostructure MS is less than the bottom layer density of the micro-nanostructure MS, and the bottom layer is located on the side of the surface layer close to the glass substrate 101.

[0113] In an embodiment of the present disclosure, the glass substrate 101 is cleaned, and a first film layer 102 is formed on one side of the cleaned glass substrate 101 . The first film layer 102 includes a plurality of first regions 111 arranged in an array, and a second region 112 surrounding the first region 111 .

[0114] Exemplarily, a plurality of first regions 111 are arranged in an array.

[0115] Exemplarily, the first region 111 and the second region 112 may be prepared by photolithography processes such as exposure, development, and etching, and the micro-nano structure MS may be formed in an etching process, which may be a dry etching process or a wet etching process.

[0116] By preparing a micro-nano structure MS on the glass substrate 101, on the one hand, large-scale mass production can be achieved using the glass substrate production line as a platform; on the other hand, the micro-nano structure MS can be used to improve the performance of the micro-nano structure substrate 100, such as surface biochemical modification efficiency, surface antibacterial performance, etc., to obtain a substrate with better performance.

[0117] In a specific implementation, the preparation of the first film layer 102 of the micro-nanostructure substrate 100 provided in the present disclosure can be implemented in the following three ways:

[0118] In the first implementation, Figure 2a and Figure 2bAs shown, the micro-nano structure MS includes a plurality of irregularly arranged pits 211, and is located on the surface of the first region 111 away from the glass substrate 101, as shown in FIG. Figure 8 As shown, the steps of preparing the first film layer 102 include the following steps S201 to S203:

[0119] Step S201 : forming a first material layer and a first photoresist layer in sequence on one side of the glass substrate 101 .

[0120] Exemplarily, the material of the first material layer includes at least one of the following: silicon oxide, silicon nitride and amorphous silicon.

[0121] Exemplarily, the first material layer can be formed by plasma-enhanced chemical vapor deposition (PECVD). The film deposited by PECVD has excellent electrical properties, good substrate adhesion and excellent step coverage. When depositing the first material layer, the first material layer of 1000 nanometers is formed using the following parameters: power greater than 500W, gas pressure greater than 500mTorr, and gases SiH4, N2 and N2O are introduced. Among them, the flow rate of N2O is greater than the flow rate of N2, the flow rate of N2 is greater than the flow rate of SiH4, and the flow rate of SiH4 is greater than 50sccm.

[0122] Exemplarily, the first photoresist layer has a thickness of 1.5 microns.

[0123] Step S202 : using a first mask to expose and develop the first photoresist layer to form a first mask pattern, wherein the orthographic projection of the first mask pattern on the glass substrate 101 covers the orthographic projection of the second region 112 on the glass substrate 101 .

[0124] Exemplarily, the exposure uses heat greater than 50 mJ, the development time is greater than 50 seconds, the post-baking temperature is greater than 100° C., and the post-baking time is greater than 0.5 min and less than 20 min to form a first mask pattern.

[0125] Step S203 : performing dry etching on the first material layer not covered by the first mask pattern to remove the remaining first mask pattern and form the first film layer 102 .

[0126] Exemplarily, ICP dry etching can be used for dry etching of the first material layer not covered by the first mask pattern. During the dry etching process, O2 can be introduced first, and then O2 and C4F4 can be introduced. The pressure of the introduced gas is greater than 100mTorr, the power is greater than 500W, and the flow rate is greater than 20sccm. Among them, the flow rate of the first introduction of O2 is greater than the flow rate of the second introduction of O2, the duration of the first introduction of O2 is less than the duration of the second introduction of O2, and the pressure of the first introduction of O2 is slightly greater than the pressure of the second introduction of O2. The duration of the second introduction of O2 is greater than the duration of the introduction of C4F4, and the pressure, power and flow rate of the second introduction of O2 and C4F4 can be the same.

[0127] After etching, a micro-nano structure MS is formed which is recessed toward the side close to the glass substrate 101 . The micro-nano structure MS is located at the first region 111 .

[0128] Exemplarily, the remaining first mask pattern is cleaned away to form the first film layer 102 .

[0129] The disclosed embodiment uses a glass substrate production line as a platform and designs and prepares a patternable micro-nano structure substrate 100 through semiconductor processing technology. On the one hand, the mask can be designed according to the actual needs, and on the other hand, the process is simple and can achieve large-scale mass production. In addition, by controlling the specific parameters in the process, the shape, size and spacing of the micro-nano structure MS can be effectively controlled, and the optimal conditions can be selected for different application scenarios.

[0130] In the second implementation, Figure 3a and Figure 3b As shown, the micro-nano structure MS includes a plurality of irregularly arranged first protrusions 221, and is located on the surface of the second region 112 away from the glass substrate 101, as shown in FIG. Fig. 9 As shown, the steps of preparing the first film layer 102 include the following steps S301 to S305:

[0131] Step S301 : forming a second material layer, a first metal layer and a second photoresist layer in sequence on one side of the glass substrate 101 .

[0132] Exemplarily, the material of the second material layer includes at least one of the following: silicon oxide, silicon nitride, and amorphous silicon. The material of the first metal layer includes one of molybdenum, titanium, and aluminum.

[0133] Exemplarily, the second material layer can be formed by chemical vapor deposition TFECVD. When depositing the second material layer, the following parameters are used: the second material layer of 1000 nanometers is formed: the power is greater than 500W, the pressure is greater than 500mTorr, and the gases SiH4, N2 and N2O are introduced. Among them, the flow rate of N2O is greater than the flow rate of N2, the flow rate of N2 is greater than the flow rate of SiH4, and the flow rate of SiH4 is greater than 50sccm.

[0134] Exemplarily, the first metal layer may be formed by sputtering with the following parameters: power greater than 1000 W, pressure greater than 0.1 Pa and less than 2 Pa, and flow rate of argon gas greater than 10 sccm.

[0135] Exemplarily, the first photoresist layer has a thickness of 1.5 microns.

[0136] Step S302: using a second mask to expose and develop the second photoresist layer to form a second mask pattern, wherein the second mask pattern and the orthographic projection of the second region 112 on the glass substrate 101 are both located within the first preset region.

[0137] Exemplarily, the exposure uses heat greater than 50 mJ, the development time is greater than 50 seconds, the post-baking temperature is greater than 100° C., and the post-baking time is greater than 0.5 min and less than 20 min to form the second mask pattern.

[0138] Step S303 : dry-etching the first metal layer and the second material layer outside the first preset area to form the first area 111 of the first film layer 102 .

[0139] Exemplarily, ICP dry etching can be used for dry etching of the first metal layer and the second material layer outside the first region, and the following parameters are used: during the dry etching process, O2 can be introduced using the first set of parameters, Cl2 and Ar2 can be introduced using the second set of parameters, and O2 and CHF3 can be introduced using the third set of parameters. Among them, the pressure in the first set of parameters is equal to the pressure in the second set of parameters, and both are greater than the pressure in the third set of parameters, and the pressure in the third set of parameters is greater than 100mT; the power in the first set of parameters, the second set of parameters, and the third set of parameters are the same, and both are greater than 500W; the flow rate in the first set of parameters is greater than the flow rate in the third set of parameters, the flow rate in the third set of parameters is greater than the flow rate in the second set of parameters, and the flow rate in the second set of parameters is greater than 100sccm. The time for introducing Ar2 is greater than the time for introducing Cl2, and both are greater than 50s. Among the gases introduced using the third set of parameters, the time for introducing CHF3 is greater than the time for introducing O2, and both are greater than 50s. The time for introduction using the first set of parameters is less than 50s.

[0140] After etching, a through hole penetrating the first film layer 102 along the first direction F1 is formed, and the through hole is the first region 111 .

[0141] Step S304: removing the remaining second mask pattern.

[0142] Exemplarily, the remaining second mask pattern is cleaned away.

[0143] Step S305 : wet-etching the first metal layer within the first preset area to form the second area 112 of the first film layer 102 .

[0144] Exemplarily, after forming a through hole in the first region 111, the first metal layer in the second region 112 is etched by wet etching to form a first protrusion 221 on the surface of the first film layer 102 away from the glass substrate 101. The wet etching time is longer than 20 seconds, the wet etching temperature is less than 50° C., the first metal layer in the first region is etched away, and the first protrusion 221 is formed. The first protrusion 221 is located in the second region 112.

[0145] The disclosed embodiment uses a glass substrate production line as a platform and designs and prepares a patternable micro-nano structure substrate 100 through semiconductor processing technology. On the one hand, the mask can be designed according to the actual needs, and on the other hand, the process is simple and can achieve large-scale mass production. In addition, by controlling the specific parameters in the process, the shape, size and spacing of the micro-nano structure MS can be effectively controlled, and the optimal conditions can be selected for different application scenarios.

[0146] In the third implementation, Figures 4a to 6b As shown, the micro-nano structure MS includes second protrusions 231, and different second protrusions 231 are located in different first regions 111 away from the surface of the glass substrate 101, such as Fig.10 As shown, the steps of preparing the first film layer 102 include the following steps S401 to S404:

[0147] Step S401 : forming a third material layer, a second metal layer and a third photoresist layer in sequence on one side of the glass substrate 101 .

[0148] Exemplarily, the material of the third material layer includes at least one of the following: silicon oxide, silicon nitride, and amorphous silicon. The material of the second metal layer includes at least one of aluminum, ITO, and titanium.

[0149] Exemplarily, the third material layer may be formed by PECVD. When depositing the third material layer, the following parameters are used: the third material layer of 1000 nanometers is formed: the power is greater than 500W, the pressure is greater than 500mTorr, and the gases SiH4, N2 and N2O are introduced. Among them, the flow rate of N2O is greater than the flow rate of N2, the flow rate of N2 is greater than the flow rate of SiH4, and the flow rate of SiH4 is greater than 50sccm.

[0150] Exemplarily, the second metal layer can be formed by sputtering, and the materials used for the second metal layer are different, and the parameters used are different. Specifically, when the second metal layer adopts aluminum, ITO or titanium-aluminum-titanium laminated structure, the parameters such as sputtering power, gas pressure and gas flow rate can be the same, and the sputtering current can be adjusted according to the material. For example, the sputtering power can be greater than 1000W, the gas pressure can be greater than 0.1Pa, and the flow rate of argon gas can be greater than 10sccm. The sputtering current of the titanium-aluminum-titanium laminated structure is greater than the sputtering current of aluminum, and the sputtering current of aluminum is greater than the sputtering current of ITO. The sputtering current of ITO is, for example, greater than 500A.

[0151] For example, the second protrusion 231 is conical (eg Figure 4a and Figure 4b In the case of a needle-shaped (as shown) or a needle-shaped (not shown in the figure), the material of the second metal layer includes aluminum, which is used to protect the second protrusion 231 to prevent the top corner of the second protrusion 231 from being etched away.

[0152] For example, when the second protrusion 231 is columnar (eg Figure 5a and Figure 5b As shown), the material of the second metal layer includes indium tin oxide (ITO).

[0153] For example, when the second protrusion 231 is hemispherical (eg Figure 6a and Figure 6b As shown), the material of the second metal layer includes titanium and aluminum, and the second metal layer is, for example, a stacked structure of titanium-aluminum-titanium.

[0154] Exemplarily, the first photoresist layer has a thickness of 1.5 microns.

[0155] Step S402: using a third mask to expose and develop the third photoresist layer to form a third mask pattern, wherein the third mask pattern and the orthographic projection of the first region 111 on the glass substrate 101 are both located within a second preset region.

[0156] Exemplarily, the materials used for the second metal layer are different, and the parameters used for exposure and development are different. Specifically, when the second metal layer uses aluminum, ITO, and a titanium-aluminum-titanium laminated structure, the development time and post-baking parameters can be the same, for example, the development time is greater than 50 seconds, the post-baking temperature is greater than 100°C, and the post-baking time is greater than 0.5min and less than 20min. The exposure heat of aluminum is greater than the exposure heat of ITO, the exposure heat of ITO is greater than the exposure heat of the titanium-aluminum-titanium laminated structure, and the exposure heat of the titanium-aluminum-titanium laminated structure is greater than 100mJ.

[0157] Step S403: dry-etching the second metal layer and the third material layer to simultaneously form the first region 111 and the second region 112 of the first film layer 102, wherein the second metal layer and the third material layer outside the second preset region are dry-etched to form the second region 112, and the mask pattern within the second preset region, or the mask pattern and the second metal layer within the second preset region, or the mask pattern, the second metal layer and the third material layer within the second preset region are dry-etched to form the first region 111.

[0158] For example, when the second metal layer is made of aluminum, ICP dry etching is used to etch the mask pattern in the second region, or the mask pattern in the second region and the second metal layer, to form a Figure 4a as well as Figure 4b The first region 111 shown in the figure includes a second protrusion 231. During the dry etching process, the fourth group of parameters can be used to introduce Cl2 and Ar2, and the fifth group of parameters can be used to introduce O2 and CHF3. Among them, the power in the fourth group of parameters is the same as that in the fifth group of parameters, and both are greater than 500W. The pressure in the fourth group of parameters is greater than the pressure in the fifth group of parameters, and the pressure in the fifth group of parameters is greater than 100mT. The flow rate in the fourth group of parameters is greater than the flow rate in the fifth group of parameters, and the flow rate in the fifth group of parameters is greater than 20sccm. The time for introducing Ar2 is greater than the time for introducing Cl2, and both are greater than 80s. The time for introducing CHF3 is greater than the time for introducing O2, and both are greater than 80s.

[0159] After the first region 111 and the second region 112 are formed by photolithography, there is still aluminum remaining above the second protrusion 231. Then, the aluminum above the second protrusion 231 can be etched away by wet etching to expose the top corner of the second protrusion 231, thereby forming a second protrusion 231 with a top corner. The second protrusion 231 is protected by aluminum to prevent the photoresist above the second protrusion 231 from being completely etched away during the etching of the second region 112 when the thickness of the first film layer 102 is large, resulting in the top corner of the second protrusion 231 being etched. This enables the micro-nanostructure substrate 100 to prepare a first film layer 102 with a larger thickness, thereby achieving better performance.

[0160] For example, when the second metal layer is made of ITO, ICP dry etching is used to etch the mask pattern, the second metal layer and the third material layer within the second region to form a Figure 5a as well as Figure 5b As shown in the first region 111 , the first region 111 includes a second protrusion 231 .

[0161] During the dry etching process, the sixth group of parameters can be used to introduce Cl2 and Ar2, and the seventh group of parameters can be used to introduce O2 and CHF3. Among them, the power in the sixth group of parameters is the same as that in the seventh group of parameters, both are greater than 500W. The pressure in the sixth group of parameters is greater than the pressure in the seventh group of parameters, and the pressure in the seventh group of parameters is greater than 100mT. The flow rate in the sixth group of parameters is greater than the flow rate in the seventh group of parameters, and the flow rate in the seventh group of parameters is greater than 20sccm. The time for introducing Ar2 is less than the time for introducing Cl2, both are greater than 50s. The time for introducing CHF3 is greater than the time for introducing O2, both are greater than 80s.

[0162] During the process of forming the first region 111 and the second region 112 by photolithography, the top corner of the second protrusion 231 and the ITO above are etched away to form the second protrusion 231 with a flat top.

[0163] For example, when the second metal layer adopts a stacked structure of titanium-aluminum-titanium, ICP dry etching is used to etch the mask pattern within the second region and the second metal layer to form a Figure 6a as well as Figure 6b As shown in the first region 111 , the first region 111 includes a second protrusion 231 .

[0164] During the dry etching process, the eighth group of parameters can be used to introduce O2, the ninth group of parameters can be used to introduce Cl2 and Ar2, and the tenth group of parameters can be used to introduce O2 and C4F4. Among them, the power in the eighth group of parameters, the ninth group of parameters and the tenth group of parameters is the same, all greater than 500W. The pressure in the eighth group of parameters is equal to the pressure in the ninth group of parameters, both greater than the pressure in the tenth group of parameters, and the pressure in the tenth group of parameters is greater than 100mT. The flow rate in the eighth group of parameters is greater than the flow rate in the ninth group of parameters, the flow rate in the ninth group of parameters is greater than the flow rate in the tenth group of parameters, and the flow rate in the tenth group of parameters is greater than 20sccm. The time for introducing Ar2 is less than the time for introducing Cl2, both greater than 50s. Among the gases introduced by the tenth group of parameters, the time for introducing C4F4 is greater than the time for introducing O2, both greater than 50s. The time for introduction by the eighth group of parameters is less than 50s.

[0165] After the first region 111 and the second region 112 are formed by photolithography, a small amount of titanium still remains above the second protrusion 231 . Then, the titanium above the second protrusion 231 can be etched away by wet etching to form a hemispherical second protrusion 231 .

[0166] Exemplarily, after forming the first region 111 and the second region 112 of the first film layer 102 , the remaining mask pattern is cleaned away.

[0167] Step S404: removing the remaining second metal layer by wet etching.

[0168] For example, when the second metal layer is made of aluminum, a wet etching process is used to remove the remaining aluminum, wherein the wet etching time is greater than 20 seconds and the wet etching temperature is less than 50°C.

[0169] For example, when the second metal layer is made of ITO, a wet etching process is used to remove the remaining second metal layer, wherein the wet etching time is greater than 20 seconds and the wet etching temperature is less than 50°C.

[0170] For example, when the second metal layer adopts a stacked structure of titanium-aluminum-titanium, a wet etching process is used to remove the remaining second metal layer, wherein the wet etching time is greater than 20 seconds and the wet etching temperature is less than 50°C.

[0171] Exemplarily, the shape of the micro-nano structure MS (such as columnar, conical, hemispherical, needle-shaped, etc.) is mainly determined by the material of the second metal layer and the process parameters, and the orthographic projection contour shape of the micro-nano structure MS (such as circular, square, etc.) is determined by the pattern of the mask.

[0172] The disclosed embodiment uses a glass substrate production line as a platform and designs and prepares a patternable micro-nano structure substrate 100 through semiconductor processing technology. On the one hand, the mask can be designed according to the actual needs, and on the other hand, the process is simple and can achieve large-scale mass production. In addition, by controlling the specific parameters in the process, the shape, size and spacing of the micro-nano structure MS can be effectively controlled, and the optimal conditions can be selected for different application scenarios.

[0173] The present disclosure provides a verification process for the surface antibacterial performance of a micro-nanostructure substrate 100, including:

[0174] Step A1: The activated Escherichia coli and Staphylococcus aureus liquids were inoculated into the bacterial culture liquid at a rate of 5%, and cultured under shaking conditions of 180 r / min and 37° C. for 3 h until the logarithmic growth phase.

[0175] Step A2: Take 1 ml of bacterial culture solution and drop it on the surface of blank glass and the micro-nanostructure substrate 100 as described in any embodiment of the present disclosure. After leaving it for a period of time, wash off the bacteria on the surface with the culture solution, shake it evenly, and place it in the bacterial culture solution for cultivation and reproduction.

[0176] Step A3: Take 100 μl of bacterial solution to a 96-well plate, add 20 μl of tetrazolium compound (MTT) solution, mix well, and then stand for reaction at 37°C for 2 hours, then centrifuge at 4000 r / min for 15 minutes and discard the supernatant, add 100 μl of dimethyl sulfoxide (DMSO) to the precipitate and mix well, then use an enzyme reader to detect the absorbance of the sample at 490 nm and 630 nm, and calculate the difference between the two to obtain the following: Fig.11 Bacterial survival statistics are shown.

[0177] like Fig.11 As shown, the micro-nano structure substrate 100 provided by the present disclosure has a good inhibitory effect on bacteria, especially a better killing effect on Gram-negative bacteria such as Escherichia coli, and the micro-nano structure substrate 100 including the first protrusion 221 has the best sterilization effect.

[0178] The present disclosure provides a verification process for the solar energy absorption efficiency of a micro-nanostructure substrate 100, including:

[0179] Step B1: cutting a plurality of micro-nanostructure substrates 100 including different micro-nanostructures MS into test pieces of equal size and shape.

[0180] Step B2: Place multiple test pieces under the same temperature conditions and keep them at the same temperature at the beginning of the experiment, such as freezing them in a refrigerator, and measure their starting temperatures before the experiment begins.

[0181] Step B3: Place multiple test pieces on a flat plate with the same optical properties, expose the reserved planes of the multiple test pieces to sunlight at the same angle, and quickly measure and record the temperature of each test piece every 30 minutes to obtain the following: Fig.12 Temperature variation curve shown.

[0182] like Fig.12 As shown, the micro-nano structure substrate 100 provided by the present disclosure promotes the absorption of solar energy, among which the cylindrical micro-nano structure MS has the best effect on improving the absorption efficiency of solar energy, which is improved by about 20% compared with ordinary glass substrates.

[0183] The present disclosure provides a verification process for the surface biochemical modification effect of the micro-nanostructure substrate 100, including:

[0184] Step C1: using ultrasound to clean the micro-nano structure substrate 100, soaking the micro-nano structure substrate 100 in a 1 mol NaOH solution for greater than or equal to 20 minutes, and then cleaning with deionized water.

[0185] Step C2: Soak the micro-nanostructure substrate 100 in a 2 mg / ml dopamine solution for more than or equal to 24 hours. Since dopamine will polymerize in an aerobic environment and cause visible color change, this step must be performed quickly.

[0186] Step C3: Clean the micro-nano structure substrate 100 with deionized water, soak the micro-nano structure substrate 100 in a 5 mg / ml hyaluronic acid solution for greater than or equal to 12 hours, rinse with deionized water and blow dry with nitrogen, and store in a refrigerator for later use.

[0187] Step C4: Activate the surface of the micro-nanostructure substrate 100 with 1-(3-dimethylaminopropyl)-3-ethylcarbodiimide hydrochloride (EDC) and N-hydroxysuccinimide (NHS), drop fluorescent antibody on the designated area and incubate for 12 hours, and observe the fluorescent signal on the surface of the micro-nanostructure substrate 100 under a fluorescence microscope to obtain the following: Fig.13 FIG. 1 is a diagram showing the capture of fluorescence signals on the surface of the micro-nanostructure substrate 100.

[0188] like Fig.13 As shown, the micro-nano structure substrate 100 provided by the present disclosure has binding sites after activation, and can effectively link various biochemical macromolecules, wherein the surface structure of the micro-nano structure substrate 100 including the second protrusions 231 has a better biochemical linking effect.

[0189] In the present disclosure, “plurality” means two or more, and “at least one” means one or more, unless otherwise clearly and specifically defined.

[0190] In the present disclosure, the orientation or positional relationship indicated by the terms "upper" and "lower" are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing the present disclosure and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present disclosure.

[0191] As used herein, the terms "comprises," "includes," or any other variation thereof are intended to encompass non-exclusive inclusion, such that a process, method, commodity, or device that includes a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, product, or device. In the absence of further limitations, an element defined by the phrase "includes a ..." does not exclude the presence of additional identical elements in the process, method, commodity, or device that includes the element.

[0192] References herein to "one embodiment," "some embodiments," "exemplary embodiments," "one or more embodiments," "example," "an example," "some examples," etc., are intended to indicate that a particular feature, structure, material, or characteristic associated with the embodiment or example is included in at least one embodiment or example of the present disclosure. Schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0193] In this document, relational terms such as first and second, etc. are used merely to distinguish one entity or operation from another entity or operation, but do not necessarily require or imply any such actual relationship or order between these entities or operations.

[0194] When describing some embodiments, the expressions "coupled" and "connected" may be used. For example, when describing some embodiments, the term "connected" may be used to indicate that two or more components are in direct physical or electrical contact with each other. As another example, when describing some embodiments, the term "coupled" may be used to indicate that two or more components are in direct physical or electrical contact. However, the term "coupled" or "communicatively coupled" may also refer to two or more components that are not in direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0195] “At least one of A, B, and C” has the same meaning as “at least one of A, B, or C” and both include the following combinations of A, B, and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B, and C.

[0196] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0197] As used herein, the term "if" is optionally interpreted to mean "when" or "upon" or "in response to determining" or "in response to detecting," depending on the context. Similarly, the phrases "if it is determined that" or "if [a stated condition or event] is detected" are optionally interpreted to mean "upon determining that" or "in response to determining that" or "upon detecting [a stated condition or event]" or "in response to detecting [a stated condition or event]," depending on the context.

[0198] The use of "for" or "configured to" herein is meant to be open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.

[0199] The use of "based on" or "according to" herein is meant to be open and inclusive. A process, step, calculation or other action based on one or more of the conditions or values ​​may, in practice, be based on other conditions or exceed the values ​​described. A process, step, calculation or other action based on one or more of the conditions or values ​​may, in practice, be based on other conditions or exceed the values ​​described.

[0200] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of variation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0201] As used herein, "parallel", "perpendicular", "equal", and "flush" include the situations described and situations similar to the situations described, the range of which is within an acceptable deviation range, wherein the acceptable deviation range is as determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range for approximate parallelism may be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range for approximate perpendicularity may also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range for approximate equality may be, for example, that the difference between the two being equal is less than or equal to 5% of either one. "Flush" includes absolute flushness and approximate flushness, wherein the acceptable deviation range for approximate flushness may be, for example, that the distance between the two being flush is less than or equal to 5% of the size of either one.

[0202] It will be understood that when a layer or an element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present between the layer or element and the other layer or substrate.

[0203] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and regions is exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are conceivable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device, and are not intended to limit the scope of the exemplary embodiments. Unless otherwise specified, the thickness of a film layer refers to the size of the film layer in the direction of its normal.

[0204] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them. Although the present disclosure has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present disclosure.

Claims

1. A micro-nanostructure substrate, comprising: Glass substrate; as well as A first film layer is disposed on one side of the glass substrate, the first film layer comprising: a plurality of first regions arranged in an array, and a second region surrounding the first region, the first region and the second region having different thicknesses; The first region and / or the second region comprises a micro-nano structure, and the surface density of the micro-nano structure is less than the bottom density of the micro-nano structure, and the bottom layer is located on a side of the surface layer close to the glass substrate.

2. The micro-nanostructure substrate according to claim 1, wherein: The micro-nano structure includes a plurality of irregularly arranged substructures, and at least two of the substructures have different heights along a first direction, where the first direction is a direction from the glass substrate to the first film layer.

3. The micro-nanostructure substrate according to claim 2, wherein: The thickness of the first region is less than the thickness of the second region; and The substructure includes a pit, the pit is located on a surface of the first region facing away from the glass substrate, and the pit is recessed toward a side close to the glass substrate.

4. The micro-nanostructure substrate according to claim 3, wherein: The thickness of the first region gradually increases from the center of the first region to the edge of the first region.

5. The micro-nanostructure substrate according to claim 2, wherein: The thickness of the first region is less than the thickness of the second region; and The substructure includes a first protrusion, the first protrusion is located on a surface of the second region away from the glass substrate, and the first protrusion protrudes toward a side away from the glass substrate.

6. The micro-nanostructure substrate according to claim 5, wherein: The first region is a through hole that penetrates the first film layer along the first direction.

7. The micro-nanostructure substrate according to claim 1, wherein: The thickness of the first region is greater than the thickness of the second region, and the thickness of the second region is greater than or equal to 0; and The micro-nano structure includes second protrusions, and different second protrusions are located in different first regions on the surface away from the glass substrate, and the second protrusions protrude toward a side away from the glass substrate.

8. The micro-nanostructure substrate according to claim 7, wherein: The shape of the second protrusion includes at least one of the following: columnar, conical, hemispherical and needle-shaped.

9. The micro-nanostructure substrate according to claim 7, wherein: The second protrusion is columnar in shape, and has a ridge protrusion on the side of the second protrusion facing the second area. The ridge protrusion extends along a second direction, and the second direction is from the bottom edge of the second protrusion close to the glass substrate to the top edge of the second protrusion away from the glass substrate.

10. The micro-nanostructure substrate according to any one of claims 1 to 9, wherein: The material of the first film layer includes at least one of the following: silicon oxide, silicon nitride and amorphous silicon.

11. A micro-nano structure device, comprising the micro-nano structure substrate according to any one of claims 1 to 10.

12. A method for preparing a micro-nanostructure substrate, comprising: providing a glass substrate; A first film layer is formed on one side of the glass substrate to obtain the micro-nano structure substrate, wherein the first film layer includes: a plurality of first regions arranged in an array, and a second region surrounding the first region, the first region and the second region have different thicknesses, the first region and / or the second region include a micro-nano structure, and the surface density of the micro-nano structure is less than the bottom density of the micro-nano structure, and the bottom layer is located on the side of the surface layer close to the glass substrate.

13. The preparation method according to claim 12, wherein: The micro-nano structure includes a plurality of irregularly arranged pits and is located on a surface of the first region away from the glass substrate. The step of forming a first film layer on one side of the glass substrate includes: forming a first material layer and a first photoresist layer in sequence on one side of the glass substrate; Using a first mask, exposing and developing the first photoresist layer to form a first mask pattern, wherein the orthographic projection of the first mask pattern on the glass substrate covers the orthographic projection of the second region on the glass substrate; The first material layer not covered by the first mask pattern is dry-etched to remove the remaining first mask pattern to form the first film layer.

14. The preparation method according to claim 12, wherein: The micro-nano structure includes a plurality of irregularly arranged first protrusions, and is located on a surface of the second region away from the glass substrate. The step of forming a first film layer on one side of the glass substrate includes: forming a second material layer, a first metal layer, and a second photoresist layer in sequence on one side of the glass substrate; Using a second mask, exposing and developing the second photoresist layer to form a second mask pattern, wherein the second mask pattern and the orthographic projection of the second area on the glass substrate are both located within the first preset area; Performing dry etching on the first metal layer and the second material layer outside the first preset area to form a first area of ​​the first film layer; removing the remaining second mask pattern; The first metal layer within the first preset area is wet-etched to form a second area of ​​the first film layer.

15. The preparation method according to claim 12, wherein: The micro-nano structure includes a second protrusion, and different second protrusions are located in different first regions away from the surface of the glass substrate. The step of forming a first film layer on one side of the glass substrate includes: forming a third material layer, a second metal layer and a third photoresist layer in sequence on one side of the glass substrate; Using a third mask, exposing and developing the third photoresist layer to form a third mask pattern, wherein the third mask pattern and the orthographic projection of the first area on the glass substrate are both located in a second preset area; The second metal layer and the third material layer are dry-etched to simultaneously form a first region and a second region of the first film layer, wherein the second metal layer and the third material layer outside the second preset region are dry-etched to form the second region, and the mask pattern within the second preset region, or the mask pattern and the second metal layer within the second preset region, or the mask pattern, the second metal layer and the third material layer within the second preset region are dry-etched to form the first region; The remaining second metal layer is removed by wet etching.

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