Mask plate, preparation method thereof and mask device
By setting a support structure on the mask plate to make it come into contact with the substrate, the problem of electrostatic shock during the evaporation process is solved, and effective protection of the substrate circuit is achieved.
Patent Information
- Application Number
- CN202510337189.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-19
- Publication Date
- 2025-05-02
- Estimated Expiration
- 2045-03-19
AI Technical Summary
The existing mask plates are prone to electrostatic damage to the circuit in the substrate during the evaporation process.
A mask plate is designed, which is provided with a support structure on one side of the mask plate body facing the substrate, and the support structure protrudes from the surface of the mask plate body facing the substrate, and contacts the substrate during evaporation to release static electricity.
By contacting the support structure with the substrate, static electricity can be effectively released, avoiding static damage to the circuit in the substrate, thereby improving the safety and reliability of the evaporation process.
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Figure CN119913456A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of display technology, and in particular to a mask plate and a preparation method thereof, and a mask device. Background Art
[0002] Organic Light Emitting Diode (OLED) and flat-panel display devices based on technologies such as Light Emitting Diode (LED) have been widely used in various consumer electronic products such as mobile phones, televisions, laptops, and desktop computers due to their advantages such as high image quality, power saving, thin body, and wide range of applications, becoming the mainstream display device.
[0003] Some film layers (such as the light-emitting layer) in OLED display panels are primarily produced using vacuum evaporation technology. Specifically, the material is heated in a vacuum environment, causing it to sublime. Through a patterned precision metal mask, a thin film with a specific shape is formed on the substrate.
[0004] However, the existing mask plate has the problem of damaging the circuit in the substrate due to static electricity during the evaporation process. Summary of the Invention
[0005] In view of this, the purpose of this application is to provide a mask plate that can prevent static electricity from damaging circuits in a substrate.
[0006] Based on the above objectives, the present application provides a mask plate for evaporating a film layer on a substrate, the mask plate comprising:
[0007] A mask plate body, wherein a mask opening is provided on the mask plate body;
[0008] A support structure is provided on a side of the mask body facing the substrate. The support structure protrudes from the surface of the mask body facing the substrate. The orthographic projection of the support structure on the mask body does not overlap with the orthographic projection of the mask opening on the mask body.
[0009] In one embodiment, the support structure and the mask plate body are made of the same material and are integrally formed;
[0010] Preferably, there is a first shortest distance between one end of the support structure away from the mask body and the mask body, and the first shortest distance is greater than or equal to 10 um.
[0011] In one embodiment, the side of the mask body facing the substrate includes a half-etched area and a full-thickness area, and the full-thickness area forms the support structure after the half-etched area is half-etched;
[0012] Preferably, the half-engraved depth of the half-engraved area is greater than or equal to 10 μm.
[0013] In one embodiment, a plurality of the mask openings are provided on the mask plate body, and the plurality of the mask openings are arranged along a first direction and a second direction, and the first direction is perpendicular to the second direction.
[0014] In one embodiment, the substrate includes a plurality of sub-substrates, the orthographic projections of the mask openings on the mask plate body are located within the orthographic projections of the corresponding sub-substrates on the mask plate body, and the orthographic projections of the support structure on the mask plate body do not overlap with the orthographic projections of the sub-substrates on the mask plate body;
[0015] Preferably, the orthographic projection of the sub-substrate on the mask body has a first boundary, and there is a second shortest distance between the orthographic projection of the support structure on the mask body and the first boundary, and the second shortest distance is greater than or equal to 100 um.
[0016] In one embodiment, the support structure includes a plurality of support columns, and the plurality of support columns are arranged at intervals;
[0017] Preferably, the area of the orthographic projection of each support column on the mask body is greater than or equal to 0.5 mm 2 ;
[0018] Preferably, the shape of the orthographic projection of the support pillar on the mask body includes one or more of a rectangle, a circle, an ellipse, a trapezoid, and a parallelogram.
[0019] In one embodiment, the surface of the mask body facing the substrate includes a target area, the orthographic projection of the support structure on the mask body is located within the orthographic projection of the target area on the mask body, and the support structure abuts against the substrate during evaporation to form a gap between the target area and the substrate;
[0020] Preferably, the target area is an area formed by the mask body expanding outwards toward the center position of the surface of the substrate;
[0021] Preferably, the orthographic projection of the substrate on the mask body is located within the orthographic projection of the target area on the mask body;
[0022] Preferably, the center position of the surface of the mask body facing the substrate coincides with the center position of the target area;
[0023] Preferably, the target area is rectangular, circular or elliptical in shape;
[0024] Preferably, the surface of the mask plate body facing the substrate includes a plurality of target areas, and the plurality of target areas are arranged at intervals. The mask plate includes a plurality of support structures, and the orthographic projection of each support structure on the mask plate body is located within the orthographic projection of the corresponding target area on the mask plate body.
[0025] Based on the same inventive concept, the present application also discloses a method for preparing a mask plate, which comprises:
[0026] A support structure is formed on the side of the mask body facing the substrate; wherein the support structure protrudes from the surface of the mask body facing the substrate, and the orthographic projection of the support structure on the mask body does not overlap with the orthographic projection of the mask opening on the mask body.
[0027] In one embodiment, forming a support structure on a side of the mask body facing the substrate includes:
[0028] A half-engraved area and a full-thickness area are divided on a side of the mask body facing the substrate; wherein an orthographic projection of the full-thickness area on the mask body does not overlap with an orthographic projection of the mask opening on the mask body;
[0029] Half-etching the half-engraved area, so that the full-thickness area forms the support structure after the half-engraved area is half-etched;
[0030] Preferably, before forming the support structure on the side of the mask body facing the substrate, or after forming the support structure on the side of the mask body facing the substrate, or while forming the support structure on the side of the mask body facing the substrate, the method for preparing the mask further includes:
[0031] A mask opening is formed on the mask plate body.
[0032] Based on the same inventive concept, the present application also discloses a mask device, which includes:
[0033] frame;
[0034] And the mask plate in the above embodiment, the mask plate is arranged on the frame.
[0035] Compared with the prior art, the mask plate provided in the present application is provided with a support structure on the side of the mask plate body facing the substrate. The support structure protrudes from the surface of the mask plate body facing the substrate. The orthographic projection of the support structure on the mask plate body does not overlap with the orthographic projection of the mask opening on the mask plate body. During evaporation, the support structure is used to contact the substrate, and static electricity is released through the support structure, thereby preventing static electricity from damaging the circuit in the substrate. BRIEF DESCRIPTION OF THE DRAWINGS
[0036] In order to more clearly illustrate the technical solutions in this application or related technologies, the following briefly introduces the drawings required for use in the embodiments or related technical descriptions. Obviously, the drawings described below are merely embodiments of this application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.
[0037] Figure 1 Schematic diagram of the process of evaporating a film layer on a substrate using a related mask plate Figure 1 ;
[0038] Figure 2 Schematic diagram of the process of evaporating a film layer on a substrate using a related mask plate Figure 2 ;
[0039] Figure 3 This is a schematic diagram of a mask plate in one embodiment of the present application;
[0040] Figure 4 for Figure 3 Schematic diagram of the target area;
[0041] Figure 5 This is a schematic diagram of the layer structure of a mask plate in one embodiment of the present application;
[0042] Figure 6 This is a schematic diagram of the cooperation between the mask plate and the substrate in one embodiment of the present application;
[0043] Figure 7 This is a schematic diagram of a partial structure of a mask plate in another embodiment of the present application;
[0044] Figure 8 This is a flow chart of a method for preparing a mask in another embodiment of the present application.
[0045] Marking Description:
[0046] 100, mask plate; 200, substrate; N, first boundary;
[0047] 1. Mask body; M, target area; 11. Half-engraved area; 12. Full-thickness area; 13. Mask opening; 14. First surface; 15. Second surface; 16. Gap;
[0048] 2. Support structure; 21. Support column. DETAILED DESCRIPTION
[0049] In order to make the objectives, technical solutions and advantages of this application more clear, this application is further described in detail below in combination with specific embodiments and with reference to the accompanying drawings.
[0050] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present application should have the usual meanings understood by people with ordinary skills in the field to which this application belongs. The "first", "second" and similar words used in the embodiments of the present application do not indicate any order, quantity or importance, but are only used to distinguish different components. "Include" or "comprise" and similar words mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.
[0051] Reference Figure 1 As shown, OLED display screens usually achieve the deposition of pixel film layers through an evaporation process. During the evaporation process, the mask plate 100 and the substrate 200 are tightly attached. After the evaporation is completed, the two are separated. Since the mask plate 100 and the substrate 200 themselves will sag under the action of gravity, and the sag of the substrate 200 is greater than that of the mask plate 100, the center position of the substrate 200 and the center position of the mask plate 100 are separated last during the separation process. Figure 2 Therefore, static electricity generated during the separation process or accumulated in the device itself will be concentrated and discharged at the center of the mask plate 100 and the substrate 200. Since the center is often located inside the screen, it will break down the screen circuit and cause defects such as bright lines.
[0052] Based on this, the present application provides a mask plate solution to solve the above problems.
[0053] Please refer to Figure 3-6 As shown, an embodiment of the present application provides a mask plate 100 for evaporating a film layer on a substrate 200. The mask plate 100 includes a mask plate body 1 and a support structure 2. The mask plate body 1 is provided with a mask opening 13. During the evaporation process, the evaporation material can be deposited on the substrate 200 through the mask opening 13.
[0054] The support structure 2 is disposed on the side of the mask body 1 facing the substrate 200 . The support structure 2 protrudes from the surface of the mask body 1 facing the substrate 200 . The orthographic projection of the support structure 2 on the mask body 1 does not overlap with the orthographic projection of the mask opening 13 on the mask body 1 .
[0055] The mask plate 100 provided in this embodiment is provided with a support structure 2 on the side of the mask plate body 1 facing the substrate 200. The support structure 2 protrudes from the surface of the mask plate body 1 facing the substrate 200. The orthographic projection of the support structure 2 on the mask plate body 1 does not overlap with the orthographic projection of the mask opening 13 on the mask plate body 1. During evaporation, the support structure 2 is in contact with the substrate 200, and static electricity is released through the support structure 2, thereby preventing static electricity from damaging the circuit in the substrate 200.
[0056] Specifically, refer to Figure 5 and 6 As shown, the mask body 1 includes a first surface 14 and a second surface 15 facing each other. During vapor deposition, the first surface 14 is positioned close to the substrate 200 and in contact with the substrate 200. In this embodiment, a support structure 2 is provided on the first surface 14. Since the support structure 2 is in contact with the substrate 200, static electricity can be discharged through the support structure 2, thereby preventing static electricity from damaging the circuits in the substrate 200.
[0057] In one embodiment, the support structure 2 is made of the same material as the mask body 1 and is integrally formed, facilitating fabrication and improving structural strength and electrostatic discharge capabilities. Furthermore, the support structure 2 can be formed by etching other areas on the mask body 1. Optionally, the support structure 2 and the mask body 1 are made of stainless steel, copper, or aluminum.
[0058] Preferably, a first minimum distance exists between the end of the support structure 2 away from the mask body 1 and the mask body 1, and the first shortest distance is greater than or equal to 10 μm (micrometers). Since the substrate 200 surrounding the support structure 2 sags under the action of gravity, and the shortest distance between the end of the support structure 2 away from the mask body 1 and the mask body 1 is greater than or equal to 10 μm, the support structure 2 can effectively support the surrounding substrate 200, ensuring a sufficiently large area where the substrate 200 is out of contact with the mask body 1, thereby protecting the circuits in a sufficiently large area of the substrate 200.
[0059] Illustratively, the first shortest distance is 10um, 15um, 20um, 25um, 30um, 35um, 40um, 50um, 100um, etc., without specific limitation.
[0060] Reference Figure 4 As shown, in one embodiment, the side of the mask body 1 facing the substrate 200 includes a half-etched area 11 and a full-thickness area 12. The full-thickness area 12 is half-etched in the half-etched area 11 to form a support structure 2. Since the height of the support structure 2 is relatively small, at the micron level, the height of the support structure 2 can be precisely controlled by etching.
[0061] Preferably, the half-engraved area 11 has a half-engraved depth greater than or equal to 10 μm. The half-engraved depth of the half-engraved area 11 corresponds to the height of the support structure 2, which is greater than or equal to 10 μm, ensuring that the support structure 2 can effectively support the surrounding substrate 200.
[0062] Exemplarily, the half-engraved depth of the half-engraved area 11 is 10um, 15um, 20um, 25um, 30um, 35um, 40um, 50um, 100um, etc., without specific limitation.
[0063] Reference Figure 3 As shown, in one embodiment, the mask plate body 1 is provided with a plurality of mask openings 13. The plurality of mask openings 13 are arranged along a first direction (e.g., the X direction in the figure) and a second direction (e.g., the Y direction in the figure), with the first direction and the second direction being perpendicular. The plurality of mask openings 13 can simultaneously form patterns at corresponding positions on the substrate 200, thereby improving evaporation efficiency and facilitating subsequent cutting of the substrate 200.
[0064] In one embodiment, the substrate 200 includes multiple sub-substrates, the orthographic projection of the mask opening 13 on the mask body 1 is located within the orthographic projection of the corresponding sub-substrate on the mask body 1, and the orthographic projection of the support structure 2 on the mask body 1 does not overlap with the orthographic projection of the sub-substrate on the mask body 1, thereby preventing the support structure 2 from blocking the evaporation material from reaching the sub-substrate. The substrate 200 may be a display substrate, and the sub-substrate may be a sub-display substrate. After the display substrate is prepared, the display substrate may be cut to obtain multiple sub-display substrates. The sub-display substrate may form an OLED display or a micro light emitting diode (Micro LED or μLED) display.
[0065] Reference Figure 7 As shown, in one embodiment, the orthographic projection of the sub-substrate on the mask body 1 has a first boundary N, and a second shortest distance is defined between the orthographic projection of the support structure 2 on the mask body 1 and the first boundary N. The second shortest distance is greater than or equal to 100 μm. Since the substrate 200 needs to be cut into sub-substrates after evaporation is completed, the second shortest distance between the orthographic projection of the support structure 2 on the mask body 1 and the first boundary N facilitates cutting the substrate 200 into sub-substrates.
[0066] Illustratively, the second shortest distance is 100um, 105um, 110um, 120um, 125um, 130um, 135um, 140um, 150um, 200um, etc., without specific limitation.
[0067] In one embodiment, the support structure 2 includes a plurality of support columns 21, which are arranged at intervals. The plurality of support columns 21 are arranged at intervals, and the plurality of support columns 21 are used to support the substrate 200, so that the area of the mask body 1 surrounded by the plurality of support columns 21 is out of contact with the substrate 200, thereby protecting the circuits in the area of the substrate 200 corresponding to the area surrounded by the plurality of support columns 21.
[0068] Preferably, the area of the orthographic projection of each support column 21 on the mask body 1 is greater than or equal to 0.5 mm 2 , to ensure stable support for the substrate 200 and facilitate preparation.
[0069] For example, the orthographic projection area of each support column 21 on the mask body 1 is 0.5 mm 2 , 0.6mm 2 , 0.7mm 2 , 0.8mm 2 , 0.9mm 2 , 1mm 2 , 2mm 2 etc., without specific limitation.
[0070] Preferably, the shape of the orthographic projection of the support pillar 21 on the mask body 1 includes one or more of a rectangle, a circle, an ellipse, a trapezoid, and a parallelogram. For example, the support pillar 21 is a cylinder, and the orthographic projection of the cylinder on the mask body 1 is a circle; or the support pillar 21 is a rectangular pillar, and the orthographic projection of the rectangular pillar on the mask body 1 is a rectangle.
[0071] Please continue to refer to Figure 3-6 As shown, in one embodiment, the surface of the mask body 1 facing the substrate 200 includes a target area M. The orthographic projection of the support structure 2 on the mask body 1 is located within the orthographic projection of the target area M on the mask body 1. During vapor deposition, the support structure 2 abuts against the substrate 200 to form a gap 16 between the target area M and the substrate 200. The support structure 2 can prevent the target area M from contacting the corresponding area on the substrate 200, thereby protecting the sub-substrate in the corresponding area on the substrate 200 and preventing static electricity from damaging the circuits in the sub-substrate in the corresponding area on the substrate 200.
[0072] Preferably, the target area M is the area formed by the mask body 1 extending outward from the center of the surface of the substrate 200. Static electricity generated during the separation of the substrate 200 from the mask 100, or static electricity accumulated by the equipment itself, will be concentrated and discharged at the center of the mask 100 and substrate 200. Therefore, setting the target area M as the area formed by the mask body 1 extending outward from the center of the surface of the substrate 200 can prevent static electricity from being concentrated and discharged at the center of the mask 100 and substrate 200, thereby preventing damage to the center of the substrate 200. The center of the substrate 200 is usually located within the sub-substrate, thus preventing static electricity from damaging the circuits within the sub-substrate.
[0073] Preferably, the orthographic projection of the substrate 200 on the mask body 1 is within the orthographic projection of the target area M on the mask body 1. That is, all areas on the substrate 200 do not contact the mask body 1 but only contact the support structure 2, thus achieving electrostatic protection for all areas.
[0074] Preferably, the center position of the surface of the mask body 1 facing the substrate 200 coincides with the center position of the target area M.
[0075] Preferably, the shape of the target area M is rectangular, circular, elliptical, etc., which is not specifically limited.
[0076] Preferably, the surface of the mask body 1 facing the substrate 200 includes multiple target areas M, which are spaced apart. The mask 100 includes multiple support structures 2, and the orthographic projection of each support structure 2 on the mask body 1 is located within the orthographic projection of the corresponding target area M on the mask body 1, thereby protecting the sub-substrate within the area on the substrate 200 corresponding to each target area M. Exemplarily, one target area M is an area formed by expanding outward from the center of the surface of the mask body 1 facing the substrate 200, and another target area M is an area near the edge of the mask body 1.
[0077] Based on the same inventive concept, the present application also discloses a method for preparing a mask plate, which comprises the following steps:
[0078] Step S10: forming a support structure 2 on the side of the mask body 1 facing the substrate 200; wherein the support structure 2 protrudes from the surface of the mask body 1 facing the substrate 200, and the orthographic projection of the support structure 2 on the mask body 1 does not overlap with the orthographic projection of the mask opening 13 on the mask body 1. Figure 3-7 shown.
[0079] The method for preparing the mask plate provided in this embodiment is to set a support structure 2 on the side of the mask plate body 1 facing the substrate 200, and the support structure 2 protrudes from the surface of the mask plate body 1 facing the substrate 200. The orthographic projection of the support structure 2 on the mask plate body 1 does not overlap with the orthographic projection of the mask opening 13 on the mask plate body 1. During evaporation, the support structure 2 is in contact with the substrate 200, and static electricity is released through the support structure 2, thereby preventing static electricity from damaging the circuit in the substrate 200.
[0080] Reference Figure 8 As shown, in one embodiment, step S10, forming a support structure 2 on the side of the mask body 1 facing the substrate 200, includes:
[0081] Step S11, dividing the half-engraved area 11 and the full-thickness area 12 on the side of the mask body 1 facing the substrate 200; wherein the orthographic projection of the full-thickness area 12 on the mask body 1 does not overlap with the orthographic projection of the mask opening 13 on the mask body 1; Figure 4 shown.
[0082] Step S12 , half-etching the half-engraved area 11 , and forming the support structure 2 in the full-thickness area 12 after the half-engraved area 11 is half-etched.
[0083] Preferably, the method for preparing the mask plate 100 further includes the following steps:
[0084] S20: forming a mask opening 13 on the mask plate body 1. Optionally, the mask opening 13 is formed by etching.
[0085] Step S20 may be performed before step S10 ; or after step S10 ; or simultaneously with step S10 , that is, etching is performed to form the mask opening 13 and the support structure 2 at the same time.
[0086] The specific structure and materials of the mask plate 100 prepared in the method for preparing the mask plate of this embodiment refer to the above-mentioned mask plate embodiment, and will not be repeated here.
[0087] Another embodiment of the present application discloses a mask device, which includes a frame and the mask plate 100 of the above embodiment. The mask plate 100 can be the mask plate 100 of any of the above embodiments. Since the evaporation device provided in this embodiment includes the mask plate 100 provided in any of the above embodiments, the mask device provided in this embodiment has the beneficial effects of the mask plate 100 provided in any of the above embodiments, which will not be repeated here.
[0088] While the present application has been described in conjunction with specific embodiments thereof, many alternatives, modifications and variations of these embodiments will be apparent to those skilled in the art in light of the foregoing description.
[0089] It should be noted that the above description is limited to some embodiments of the present application. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recited in the claims may be performed in an order different from that described in the above embodiments and still achieve the desired results. Furthermore, the processes depicted in the accompanying drawings do not necessarily require the specific order or sequential order shown to achieve the desired results. In certain embodiments, multitasking and parallel processing are also possible or may be advantageous.
[0090] The embodiments of the present application are intended to cover all such substitutions, modifications, and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiments of the present application should be included in the scope of protection of this application.
Claims
1. A mask plate for evaporating a film layer on a substrate, characterized in that: The mask plate comprises: A mask plate body, wherein a mask opening is arranged on the mask plate body; The support structure is arranged on a side of the mask body facing the substrate, the support structure protrudes from the surface of the mask body facing the substrate, and the orthographic projection of the support structure on the mask body does not overlap with the orthographic projection of the mask opening on the mask body.
2. The mask plate according to claim 1, characterized in that: The support structure is made of the same material as the mask plate body and is integrally formed; Preferably, there is a first shortest distance between one end of the support structure away from the mask body and the mask body, and the first shortest distance is greater than or equal to 10 um.
3. The mask plate according to claim 2, characterized in that: The side of the mask body facing the substrate includes a half-etched area and a full-thickness area, and the full-thickness area forms the support structure after the half-etched area is half-etched; Preferably, the half-engraved depth of the half-engraved area is greater than or equal to 10 um.
4. The mask plate according to claim 1, characterized in that: The mask plate body is provided with a plurality of mask openings, and the plurality of mask openings are arranged along a first direction and a second direction, and the first direction is perpendicular to the second direction.
5. The mask plate according to claim 4, characterized in that: The substrate comprises a plurality of sub-substrates, the orthographic projections of the mask openings on the mask plate body are located within the orthographic projections of the corresponding sub-substrates on the mask plate body, and the orthographic projections of the support structure on the mask plate body do not overlap with the orthographic projections of the sub-substrates on the mask plate body; Preferably, the orthographic projection of the sub-substrate on the mask body has a first boundary, and the orthographic projection of the support structure on the mask body and the first boundary have a second shortest distance, and the second shortest distance is greater than or equal to 100 um.
6. The mask plate according to claim 1, characterized in that: The support structure comprises a plurality of support columns, and the plurality of support columns are arranged at intervals; Preferably, the area of the orthographic projection of each support column on the mask body is greater than or equal to 0.5 mm 2 ; Preferably, the shape of the orthographic projection of the support column on the mask plate body includes one or more of a rectangle, a circle, an ellipse, a trapezoid, and a parallelogram.
7. The mask plate according to claim 1, characterized in that: The surface of the mask body facing the substrate includes a target area, the orthographic projection of the support structure on the mask body is located within the orthographic projection of the target area on the mask body, and the support structure abuts against the substrate during evaporation to form a gap between the target area and the substrate; Preferably, the target area is an area formed by the mask body expanding outward toward the center position of the surface of the substrate; Preferably, the orthographic projection of the substrate on the mask body is located within the orthographic projection of the target area on the mask body; Preferably, the center position of the surface of the mask body facing the substrate coincides with the center position of the target area; Preferably, the shape of the target area is rectangular, circular or elliptical; Preferably, the surface of the mask body facing the substrate includes a plurality of target areas, the plurality of target areas are arranged at intervals, the mask includes a plurality of support structures, and the orthographic projection of each support structure on the mask body is located within the orthographic projection of the corresponding target area on the mask body.
8. A method for preparing a mask plate, characterized in that: include: A support structure is formed on the side of the mask body facing the substrate; wherein the support structure protrudes from the surface of the mask body facing the substrate, and the orthographic projection of the support structure on the mask body does not overlap with the orthographic projection of the mask opening on the mask body.
9. The method for preparing a mask plate according to claim 8, characterized in that: The supporting structure is formed on a side of the mask body facing the substrate, comprising: A half-engraved area and a full-thickness area are divided on a side of the mask body facing the substrate; wherein an orthographic projection of the full-thickness area on the mask body does not overlap with an orthographic projection of the mask opening on the mask body; Half-etching the half-engraved area, and the full-thickness area forms the support structure after the half-engraved area is half-etched; Preferably, before the support structure is formed on the side of the mask body facing the substrate; or after the support structure is formed on the side of the mask body facing the substrate; or while the support structure is formed on the side of the mask body facing the substrate, the method for preparing the mask further includes: A mask opening is formed on the mask plate body.
10. A mask device, characterized in that: include: frame; And the mask plate according to any one of claims 1 to 7, wherein the mask plate is arranged on the frame.
Citation Information
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