Low-damage opposite plane cathode

By designing a low-damage opposing plane cathode in the magnetron plane cathode, the sputtered ions are sputtered obliquely to the substrate surface, the problem of sputtered particles and rebound argon ions directly impacting the substrate in the traditional magnetron plane cathode is solved, and lower film formation damage and a smoother and even film formation surface are achieved.

CN119913468APending Publication Date: 2025-05-02CSNW VACUUM TECH (HEFEI) CO LTD
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Patent Information

Application Number
CN202411982593.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-31
Publication Date
2025-05-02

AI Technical Summary

Technical Problem

In the traditional magnetron plane cathode, the target material is placed face to face with the substrate, causing sputtered particles and rebound argon ions to directly collide with the substrate, causing increased substrate temperature and damage to the membrane.

Method used

A low-damage opposing plane cathode is designed, by providing a first magnet and a second magnet on the sides of the first yoke and the second yoke, and providing the first target material and the second target material on the sides of the first magnet and the second magnet, respectively, to form an opposite arrangement and a sputtering outlet to cause the sputtering ions to sputter obliquely onto the substrate surface.

Benefits of technology

It effectively avoids direct impact of sputtered particles and rebound argon ions on the substrate, significantly reduces film formation damage, improves the smoothness and uniformity of the film formation surface, and at the same time improves the film formation rate.

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Abstract

The invention provides a low-damage opposite plane cathode which comprises a first target material, a second target material, a first magnet, a second magnet, a first magnet yoke and a second magnet yoke. The first magnet is located on the side of the first magnet yoke, and the second magnet is located on the side of the second magnet yoke. The first target material is located on the side portion of the first magnet, the second target material is located on the side portion of the second magnet, the first target material and the second target material are oppositely arranged, and a space is reserved between the first target material and the second target material so that a sputtering outlet can be formed between the first target material and the second target material. The sputtering particles and the rebounded argon ions are obliquely sputtered to the surface of the substrate, the sputtering particles and the rebounded argon ions are prevented from directly impacting the substrate, the film forming damage is greatly reduced, and the film forming surface is smoother and more uniform.
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Description

Technical Field

[0001] The invention relates to the technical field of magnetron sputtering, and in particular to a low-damage facing plane cathode. Background Art

[0002] Magnetron sputtering is widely used in the field of material coating and is a type of physical vapor deposition. The magnetron planar cathode is the most concerned result for material coating using magnetron sputtering technology. In traditional magnetron planar cathodes, the target material and the substrate are placed face to face, and the sputtered particles and rebounding argon ions will directly collide with the substrate, causing the substrate temperature to rise and causing greater damage to the film layer. Summary of the invention

[0003] In order to solve the technical problems existing in the background technology, the present invention proposes a low-damage opposing planar cathode.

[0004] A low-damage facing planar cathode proposed by the present invention comprises: a first target material, a second target material, a first magnet, a second magnet, and a first magnetic yoke and a second magnetic yoke;

[0005] The first magnet is located on a side of the first yoke, and the second magnet is located on a side of the second yoke;

[0006] The first target is located at the side of the first magnet, the second target is located at the side of the second magnet, and the first target is arranged opposite to the second target, and a distance is reserved between the first target and the second target to form a sputtering outlet therebetween.

[0007] Preferably, it also includes a substrate, the substrate has a channel, the first magnetic yoke is located on the side wall on one side of the channel, the first magnet is located on the side of the first magnetic yoke close to the channel, and the first target material is located on the side of the first magnet close to the channel; the second magnetic yoke is located on the side wall on the other side of the channel, the second magnet is located on the side of the second magnetic yoke close to the channel, and the second target material is located on the side of the second magnet close to the channel.

[0008] Preferably, the channel is an annular channel, which includes a first straight section, a second straight section, and a curved section located at the ends of the first straight section and the second straight section and connecting the first straight section and the second straight section.

[0009] Preferably, there are at least two groups of the first target material and the second target material, wherein one group of the first target material and the second target material are arranged in the first straight track section, and the other group of the first target material and the second target material are arranged in the second straight track section, and the material of the first target material and the second target material located in the first straight track section is the same as or different from the material of the first target material and the second target material located in the second straight track section.

[0010] Preferably, a first anode plate covering the upper end of the first target and a second anode plate covering the upper end of the second target are respectively provided on both sides of the sputtering outlet.

[0011] Specifically, the end surfaces of the first anode plate and the second anode plate that are close to each other both include a vertical surface and an inclined surface that is located below the vertical surface and is inclined from the vertical surface to a direction away from each other.

[0012] Preferably, a first water-cooling plate is provided between the first target material and the first magnet, and the first magnet is fixed between the first magnetic yoke and the first water-cooling plate.

[0013] Preferably, a second water-cooling plate is provided between the second target material and the second magnet, and the second magnet is fixed between the second yoke and the second water-cooling plate.

[0014] In the present invention, the first magnet is arranged on the side of the first yoke, the second magnet is arranged on the side of the second yoke, the first target is arranged on the side of the first magnet, and the second target is arranged on the side of the second magnet, and the first target and the second target are arranged opposite to each other, so that the sputtered ions can only be obliquely sputtered to the surface of the substrate from the sputtering outlet between the first target and the second target, avoiding the sputtered particles and the rebounded argon ions from directly impacting the substrate, so that the film damage is greatly reduced and the film surface is smoother and more uniform. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 A schematic diagram of the structure of a low-damage facing planar cathode proposed by the present invention Figure 1 ;

[0016] Figure 2 A schematic diagram of the structure of a low-damage facing planar cathode proposed by the present invention Figure 2 ;

[0017] Figure 3 It is a schematic cross-sectional view along the AA direction of FIG.

[0018] Figure 4 This is a schematic structural diagram of the first anode plate and the second anode plate in a low-damage opposing planar cathode proposed by the present invention;

[0019] Figure 5 A schematic diagram of the installation positions of the first water-cooling plate and the second water-cooling plate in a low-damage opposing planar cathode proposed by the present invention;

[0020] Figure 6 A distribution diagram of magnetic induction lines formed by the first magnet and the second magnet in a low-damage opposing planar cathode proposed by the present invention;

[0021] Figure 7 This is a schematic diagram of the working principle of a low-damage opposing planar cathode proposed by the present invention. DETAILED DESCRIPTION

[0022] Reference Figure 1The present invention proposes a low-damage facing planar cathode, comprising: a substrate 7, and a first target material 1, a second target material 2, a first magnet 3, a second magnet 4, a first yoke 5, and a second yoke 6 installed on the substrate 7.

[0023] The first magnet 3 is located on the side of the first yoke 5, and the second magnet 4 is located on the side of the second yoke 6. The first target 1 is located on the side of the first magnet 3, and the second target 2 is located on the side of the second magnet, and the first target 1 and the second target 2 are arranged opposite to each other, and a space is reserved between the first target 1 and the second target 2 to form a sputtering outlet therebetween, so that the sputtering particles generated by the first target 1 and the second target 2 are sputtered out from the sputtering outlet in an oblique and cross-sputtering manner.

[0024] Reference Figure 2-3 The substrate 7 has a channel, the first yoke 5 is located on the side wall of one side of the channel, the first magnet 3 is located on the side of the first yoke 5 close to the channel, and the first target 1 is located on the side of the first magnet 3 close to the channel; the second yoke 6 is located on the side wall of the other side of the channel, the second magnet 4 is located on the side of the second yoke 6 close to the channel, and the second target 2 is located on the side of the second magnet 4 close to the channel. The channel is an annular channel, which includes a first straight section, a second straight section, and a curved section located at the ends of the first straight section and the second straight section and connecting the first straight section and the second straight section, so that the planar cathode forms two sputtering outlets within a short distance.

[0025] Reference Figure 4 A first anode plate 8 covering the upper end of the first target 1 and a second anode plate 9 covering the upper end of the second target 2 are respectively provided on both sides of the sputtering outlet, so that the energy and direction of the sputtered particles can be controlled by the first anode plate 8 and the second anode plate 9, so that the film formation can achieve the required quality and performance.

[0026] Furthermore, the end surfaces of the first anode plate 8 and the second anode plate 9 that are close to each other both include a vertical surface a and an inclined surface b that is located below the vertical surface a and is inclined from the vertical surface a toward a direction away from each other.

[0027] Reference Figure 5 In order to enhance the cooling effect, in this embodiment, a first water-cooling plate 10 is arranged between the first target material 1 and the first magnet 3, and a second water-cooling plate 11 is arranged between the second target material 2 and the second magnet 4, so that the first magnet 3 is fixed between the first yoke 5 and the first water-cooling plate 10, and the second magnet 4 is fixed between the second yoke 6 and the second water-cooling plate 11, and the cooling medium passes directly between the first target material 1 and the first magnet 3, and between the second target material 2 and the second magnet 4.

[0028] Reference Figure 6-7The working principle of a low-damage planar cathode proposed by the present invention is as follows: when working, the first magnet 3 and the second magnet 4 generate a magnetic field, and the plasma 12 is respectively confined to the surface of the first target material 1 and the second target material 2, and the target material is etched, so that the sputtered ions are obliquely sputtered out from the sputtering outlet between the first target material 1 and the second target material 2. When the substrate 13 moves uniformly above the sputtering outlet, the oblique sputtered particles are uniformly sputtered to the surface of the substrate 13, so that the film damage is greatly reduced, and the sputtered particles generated by the first target material 1 and the second target material 2 are obliquely cross-sputtered on the surface of the substrate 13, so that the film surface is smoother and more uniform. At the same time, the substrate 13 passes through two sputtering outlets in a short distance, which can effectively improve the film formation rate. In addition, the structural design of the annular channel allows a group of first target materials 1 and second target materials 2 arranged in the first straight section and another group of first target materials 1 and second target materials 2 arranged in the second straight section to choose the same material or different materials to meet the diversity of film formation.

[0029] As can be seen from the above, the structural design of the present invention ensures that the sputtered particles and rebounded argon ions do not directly impact the substrate 13, but are obliquely sputtered to the surface of the substrate 13, so that the film damage is greatly reduced, the film surface is smoother and more uniform, and the film formation rate is higher.

[0030] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A low-damage facing planar cathode, characterized in that: include: A first target material (1), a second target material (2), a first magnet (3), a second magnet (4), a first magnetic yoke (5), and a second magnetic yoke (6); The first magnet (3) is located on the side of the first magnetic yoke (5), and the second magnet (4) is located on the side of the second magnetic yoke (6); The first target material (1) is located on the side of the first magnet (3), the second target material (2) is located on the side of the second magnet (4), and the first target material (1) and the second target material (2) are arranged opposite to each other, and a distance is reserved between the first target material (1) and the second target material (2) to form a sputtering outlet between the two.

2. A low-damage facing planar cathode according to claim 1, characterized in that: The invention also comprises a substrate (7), wherein the substrate (7) has a channel, wherein the first magnetic yoke (5) is located on the side wall on one side of the channel, the first magnet (3) is located on the side of the first magnetic yoke (5) close to the channel, and the first target material (1) is located on the side of the first magnet (3) close to the channel; the second magnetic yoke (6) is located on the side wall on the other side of the channel, the second magnet (4) is located on the side of the second magnetic yoke (6) close to the channel, and the second target material (2) is located on the side of the second magnet (4) close to the channel.

3. A low-damage facing planar cathode according to claim 2, characterized in that: The channel is an annular channel, which includes a first straight section, a second straight section, and a curved section located at the ends of the first straight section and the second straight section and connecting the first straight section and the second straight section.

4. A low-damage facing planar cathode according to claim 3, characterized in that: At least two groups of first target materials (1) and second target materials (2) are provided, wherein one group of first target materials (1) and second target materials (2) are arranged in a first straight track section, and the other group of first target materials (1) and second target materials (2) are arranged in a second straight track section, and the materials of the first target materials (1) and second target materials (2) located in the first straight track section are the same as or different from those of the first target materials (1) and second target materials (2) located in the second straight track section.

5. The low-damage facing planar cathode according to claim 1, characterized in that: A first anode plate (8) covering the upper end of the first target material (1) and a second anode plate (9) covering the upper end of the second target material (2) are respectively provided on both sides of the sputtering outlet.

6. A low-damage facing planar cathode according to claim 5, characterized in that: The end surfaces of the first anode plate (8) and the second anode plate (9) that are close to each other both include a vertical surface (a) and an inclined surface (b) that is connected below the vertical surface (a) and is inclined in a direction away from each other.

7. A low-damage facing planar cathode according to any one of claims 1 to 6, characterized in that: A first water-cooling plate (10) is provided between the first target material (1) and the first magnet (3), and the first magnet (3) is fixed between the first magnetic yoke (5) and the first water-cooling plate (10).

8. A low-damage facing planar cathode according to any one of claims 1 to 6, characterized in that: A second water-cooling plate (11) is provided between the second target material (2) and the second magnet (4), and the second magnet (4) is fixed between the second magnetic yoke (6) and the second water-cooling plate (11).