Chamber body, chamber apparatus, semiconductor processing system, and method of manufacturing chamber body

Abstract

A chamber body includes a ceramic weld having a lower wall, a side wall, and an upper wall. The side wall is coupled to the lower wall by welding the side wall to the lower wall, and the upper wall is coupled to the side wall by welding the side wall to the upper wall. The upper wall has an upper wall panel portion formed from a single quartz workpiece using a subtractive manufacturing technique and an upper wall rib portion extending therefrom, the upper wall further having an unwelded rib-like region covering the lower wall. Chamber apparatuses, semiconductor processing systems, and related methods of manufacturing the chamber body and depositing a material layer onto a substrate supported within the chamber body are also described.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of U.S. Provisional Patent Application No. 63 / 546,606, U.S. Provisional Patent Application No. 63 / 546,608 filed on October 31, 2023, and U.S. Provisional Patent Application No. 63 / 546,611, all of which were filed on October 31, 2023, and the contents of each of which are also incorporated herein by reference in their entirety. Technical Field

[0003] The present disclosure relates generally to chamber bodies and, more particularly, to methods of manufacturing chamber bodies from ceramic materials such as quartz. Background Art

[0004] Quartz articles, such as chambers used to deposit material layers in semiconductor processing systems, are often formed using welding techniques. For example, a cold wall chamber used to deposit material layers using chemical vapor deposition techniques often includes walls defining a processing volume, with structural members joined to the walls by welding. The structural members are often welded to the walls, such as using hydrogen gas welding techniques, so that the processing volume contained within the chamber walls can be maintained at a relatively low pressure relative to the external environment during deposition of the material layer onto a substrate supported within the chamber.

[0005] One challenge with welded quartz articles is that the welding process can easily introduce artifacts into the chamber weld during manufacturing. For example, bubbles and / or inclusions formed from non-native materials may infiltrate the ceramic weld structure during welding, potentially changing the optical properties of the ceramic weld and / or the strength of the ceramic weld. The localized nature of the heating employed during the welding process and subsequent cooling may impart residual stresses into the ceramic weld structure, potentially limiting the strength of the ceramic weld and increasing the risk of fracture of the ceramic weld during subsequent handling and / or manufacturing processes. The heat used during the welding process may cause the shape of the ceramic weld to deform during welding, thereby deviating dimensionally from the dimensions of the intended weld, potentially changing the characteristics of the final weld.

[0006] There are various countermeasures to limit the introduction of artifacts into welds and / or remove artifacts from welds after the welding process. For example, welding can be done in an environmentally controlled workspace to limit the introduction of contaminants. The welded components can be further cleaned before welding, which also limits the risk of contaminants being introduced into ceramic welds during welding. The residual stresses generated by the welding process can be eliminated (at least partially eliminated) by annealing the ceramic welds after the welding process, and uniform heating and subsequent controlled cooling limit the stresses that would otherwise limit the strength of the ceramic welds. And during the heating process, the heating of the joined articles can be carefully controlled to limit the deformation of the shape defined by the resulting welds, so that the ceramic welds are more likely to meet the dimensional requirements of the application in which the ceramic welds are used. Although this technology generally meets its intended purpose, it increases the cost and complexity of quartz product manufacturing. For example, a weld formed by multiple welds may require multiple annealing operations because the residual stress introduced during the previous welding operation needs to be removed before the subsequent welding operation, thereby extending the manufacturing process.

[0007] Such chambers and methods of manufacturing chambers using welding techniques are generally considered suitable for their intended purposes. However, there is still a need in the art for improved chamber bodies, chamber devices, and semiconductor processing systems including chamber bodies, and related methods of manufacturing chamber bodies. The present disclosure provides a solution to this need. Summary of the invention

[0008] A chamber body is provided. The chamber body includes a ceramic weldment having a lower wall, a side wall, and an upper wall. The side wall is coupled to the lower wall by side wall-to-lower wall welding, and the upper wall is coupled to the side wall by side wall-to-upper wall welding. The upper wall has an upper wall plate portion and an upper wall rib portion extending therefrom, the upper wall rib portion being formed from a single quartz workpiece using a subtractive manufacturing technique, and the upper wall also has an unwelded ribbed region covering the lower wall.

[0009] In addition to or as an alternative to one or more of the above features, a further example of the chamber body may include a ceramic welded part forming the chamber body further including an injection end flange coupled to the upper wall by welding the injection end flange to the upper wall, and a discharge end flange coupled to the upper wall by welding the discharge end flange to the upper wall. The ceramic welded part may be substantially composed of quartz.

[0010] In addition to one or more of the above features, or as an alternative, further examples of the chamber body may include that the side wall is a first side wall. The chamber body has a second side wall extending parallel to the first side wall. The second side wall may be connected to the lower wall by welding the second side wall to the lower wall. The second side wall may be connected to the upper wall by welding the second side wall to the upper wall.

[0011] In addition to or as an alternative to one or more of the above-described features, a further example of the chamber body may include a lower wall having a lower wall rib portion extending in a direction opposite to the side wall and upper wall of the ceramic welded part. The ceramic welded part may also have two or more first side rib segments connected to the upper wall rib portion by welding with the upper wall through two or more first side rib segments, the two or more first side rib segments further connected to the lower wall rib portion by welding with the lower wall through a plurality of first side rib segments; and two or more second side rib segments connected to the upper wall rib portion by welding with the upper wall through two or more second side rib segments, the two or more second side rib segments connected to the lower wall rib portion by welding with the lower wall through two or more second side rib segments.

[0012] In addition to or as an alternative to one or more of the features described above, a further example of a chamber body can include a lower wall having a lower wall plate portion separating a lower wall rib portion from a first side wall and a second side wall. The lower wall plate portion and the lower wall rib portion can be formed from another single quartz workpiece using a subtractive manufacturing technique.

[0013] In addition to or as an alternative to one or more of the above features, further examples of the chamber body may include a lower wall defining a channel. The tube body may be aligned to the channel and coupled to the lower wall at the channel by welding the tube body to the lower wall.

[0014] In addition to one or more of the features described above, or as an alternative, a further example of a chamber body can include an upper wall having an upper wall unwelded ribbed region that is defined using a subtractive manufacturing technique and extends around the passage. The upper wall unwelded ribbed region can have a diameter greater than 300 mm and extend around (e.g., concentrically) the passage. The upper wall unwelded ribbed region can extend around an axis of rotation extending through the tube body and the passage.

[0015] In addition to one or more of the above features, or as an alternative, further examples of the chamber body can include that the lower wall can have a lower wall unwelded ribbed area extending around the channel. The lower wall unwelded ribbed area can be defined by a first side wall and lower wall weld. The lower wall unwelded ribbed area can be defined by a second side wall and lower wall weld that is laterally opposite to the first side wall and lower wall weld.

[0016] In addition to or in lieu of one or more of the features described above, further examples of chamber bodies may include a lower wall unwelded ribbed region defined by an injection end flange to lower wall weld and a discharge end flange to lower wall weld, the weld being longitudinally opposite the injection end flange to lower wall weld.

[0017] A chamber device is provided. The chamber device includes a chamber body as described above, a substrate support, a support member and an axis member. The lower wall of the chamber body may define a channel. The channel may be aligned to the channel and connected to the lower wall by welding the tube body to the lower wall. The substrate support may be arranged within the interior of the chamber body and supported to rotate about a rotation axis extending through the channel. The support member is arranged along the rotation axis and is rotationally fixed relative to the substrate support. The axis member is arranged along the rotation axis, rotationally fixed relative to the support member, and extends through the channel and the tube body to operably connect the lifting and rotating module to the substrate support.

[0018] In addition to or in lieu of one or more of the features described above, a further example of a chamber apparatus may include a lower wall having an upper wall unwelded ribbed region extending around a channel of an upper heater element array, a plurality of upper heater elements supported above the upper wall of the chamber body and covering the substrate support. The upper wall unwelded ribbed region may optically couple the plurality of upper heater elements to an interior of the chamber body.

[0019] In addition to or in lieu of one or more of the features described above, further examples of chamber apparatus can include a pyrometer supported above the chamber body and arranged along an optical axis intersecting the substrate support. An upper wall unwelded ribbed region optically couples the pyrometer to an interior of the chamber body.

[0020] A semiconductor processing system is provided. The semiconductor processing system includes a chamber body as described above, a substrate support arranged in the interior of the chamber body and configured to support a substrate during deposition of a material layer onto an upper surface of the substrate, a precursor source including a silicon-containing material layer precursor coupled to an injection end of the chamber body, and an exhaust source including a vacuum pump coupled to an exhaust end of the chamber body and coupled to the precursor source through the chamber body.

[0021] A method of manufacturing a chamber body weldment is provided. The method includes forming an upper wall having an upper wall plate portion and an upper wall rib portion extending from the upper wall plate portion from a first single quartz workpiece using a subtractive manufacturing technique, forming a lower wall having a lower wall plate portion and a lower wall rib portion extending from the lower wall plate portion from a second single quartz workpiece using a subtractive manufacturing technique, and coupling the first side wall to the lower wall with a first side wall to lower wall weld. The method also includes coupling the second side wall to the lower wall with a second side wall to lower wall weld, coupling the upper wall plate portion of the upper wall to the first side wall with a first side wall to upper wall weld, and coupling the upper wall plate portion of the upper wall to the second side wall with a second side wall to upper wall weld, whereby the upper wall defines an unwelded ribbed region that covers the lower wall and is separated from the lower wall by the first side wall and the second side wall.

[0022] In addition to one or more of the features described above, or as an alternative, further examples of the method may include aligning the injection end flange to the injection side edge of the lower wall plate portion of the lower wall, and connecting the injection end flange to the lower wall by welding the injection end flange to the lower wall, and aligning the injection side edge of the upper wall to the injection end flange, and connecting the injection end flange to the upper wall by welding the injection end flange to the upper wall.

[0023] In addition to or instead of one or more of the features described above, further examples of the method may include aligning the discharge end flange to a discharge side edge of a lower wall plate portion of a lower wall, and connecting the discharge end flange to the lower wall by welding the discharge end flange to the lower wall, and aligning the discharge side edge of an upper wall to the discharge end flange, and connecting the discharge end flange to the upper wall by welding the discharge end flange to the upper wall.

[0024] In addition to or instead of one or more of the features described above, a further example of the method may include defining a channel extending through a lower wall of the chamber body, and coupling the tube body to the lower wall by welding the tube body to the lower wall, whereby an unwelded ribbed region of the upper wall covers and extends around the channel.

[0025] In addition to or instead of one or more of the features described above, a further example of the method may include aligning a plurality of first side rib segments to an upper wall rib portion of an upper wall and a lower wall rib portion of a lower wall, connecting the plurality of first side rib segments to the upper wall rib portion by welding the plurality of first side ribs to the upper wall, and connecting the plurality of first side rib segments to the lower wall rib portion by welding the plurality of first side ribs to the lower wall, whereby one or more of the plurality of first side rib segments float relative to the first side wall.

[0026] In addition to or in lieu of one or more of the features described above, further examples may include annealing the ceramic weldment, registering a plurality of second side rib segments to an upper wall rib portion of the upper wall and a lower wall rib portion of the lower wall, coupling the plurality of second side rib segments to the upper wall rib portion with a plurality of second side rib to upper wall welding, and coupling the plurality of second side rib segments to the lower wall rib portion with a plurality of second side rib to lower wall welding. One or more of the plurality of second side rib segments may float relative to the second side wall.

[0027] In addition to or as an alternative to one or more of the features described above, subtractive manufacturing techniques may include one or more of milling, coring, and sawing to define at least one of an upper wall rib of the upper wall and a lower wall rib of the lower wall of the weldment.

[0028] A semiconductor processing system may include a chamber arrangement including a chamber body having a ceramic weld as described above formed using the above method.

[0029] A material layer deposition method is provided. The method includes, at a chamber body as described above, placing a substrate within the chamber body, heating the substrate using an upper heater element array, exposing the substrate to a silicon-containing material precursor, and depositing a silicon-containing material layer onto the substrate using the silicon-containing material precursor. During deposition of the silicon-containing material layer using a pyrometer, the upper heater element array may be used to adjust heating of the substrate. It is contemplated that the upper heater is optically coupled to the substrate via an unwelded rib region of the upper wall, the pyrometer is optically coupled to the substrate via an unwelded rib region of the upper wall, and the unwelded rib region of the upper wall limits cross-substrate variation in the material relative to the chamber body having an upper wall welded rib region that optically couples the upper heater element array and / or the pyrometer to the substrate.

[0030] The present invention summary is provided to introduce some concepts in a simplified form. These concepts are further described in detail in the detailed description of the examples of the following disclosure. The present invention summary is not intended to identify the key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] These and other features, aspects and advantages of the present invention disclosed herein are described below with reference to the accompanying drawings of certain embodiments, which are intended to illustrate rather than to limit the present invention.

[0032] Figure 1 is a schematic diagram of a semiconductor processing system including a chamber apparatus having a chamber body according to the present disclosure, showing an upper wall and a lower wall of the chamber body formed using a subtractive manufacturing technique;

[0033] Figure 2 According to the example of the present disclosure Figure 1 a cross-sectional side view of a chamber body showing an upper array of heater elements supported above an upper wall of the chamber body formed using subtractive manufacturing techniques;

[0034] Figure 3 is formed according to an example of the present disclosure Figure 1 a top plan view of a weldment of a chamber body showing an upper wall plate portion and an upper wall rib portion formed from a single quartz workpiece using subtractive manufacturing techniques;

[0035] Figure 4 According to the example of the present disclosure Figure 1 A bottom plan view of a ceramic weldment of a chamber body showing a lower wall plate portion and a lower wall rib portion of the lower wall formed from another single quartz workpiece using subtractive manufacturing techniques;

[0036] Figure 5 is formed according to an example of the present disclosure Figure 1A first side view of a ceramic weldment of a chamber body showing a first side rib segment and an end flange coupled to the ceramic weldment using a first side rib segment weld and an end flange weld;

[0037] Figure 6 is formed according to an example of the present disclosure Figure 1 a second side view of the ceramic weldment of the chamber body showing the second side rib and the end flange coupled to the ceramic weldment using the second side rib segment weld and the end flange weld;

[0038] Figures 7 to 11 is a schematic diagram of a method of manufacturing a weldment to form a chamber body using an upper wall and a lower wall formed using a subtractive manufacturing technique, showing the weldment formed by coupling a side wall and an end flange to a lower wall of the chamber body using welding, and then coupling an upper wall and a side rib segment to a ceramic weldment using welding;

[0039] Fig.12 is deposited in Figure 1 a graph of a cross-substrate material layer thickness on a substrate within a chamber body and a chamber body having an all-welded structure, showing a reduction in the cross-substrate material layer thickness in a chamber body having upper and lower walls formed using subtractive manufacturing techniques;

[0040] Figures 13 to 15 is a process flow diagram of a method of manufacturing a chamber body for a chamber apparatus included in a semiconductor processing system, showing operations of the method according to illustrative and non-limiting examples of the method; and

[0041] Fig.16 is a process flow diagram of a method of depositing a layer of material onto a substrate supported within a chamber having an upper wall formed using subtractive manufacturing techniques, illustrating operations of the method according to a non-limiting example of the method.

[0042] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the relative sizes of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the illustrated embodiments of the present disclosure. DETAILED DESCRIPTION

[0043] Reference will now be made to the drawings, wherein like reference numerals represent similar structural features or aspects of the subject disclosure. For purposes of explanation and illustration, and not limitation, Figure 1 A partial view of an example of a semiconductor processing system including a chamber apparatus having a chamber body according to the present disclosure is shown in FIG. 1 and is generally indicated by the reference numeral 100 . Figure 2-16Other examples of chamber bodies, chamber arrangements, and semiconductor processing systems including chamber bodies according to the present disclosure are provided in, as well as related methods of manufacturing chamber bodies and depositing material layers onto substrates supported in chamber bodies according to the present disclosure, or aspects thereof, as will be described. The systems and methods of the present disclosure may be used to manufacture and use chamber bodies for depositing material layers onto substrates, such as silicon-containing epitaxial material layers deposited using chemical vapor deposition techniques in a chamber arrangement having a lateral flow architecture, although the present disclosure is generally not limited to any particular deposition technique or chamber structure.

[0044] refer to Figure 1 , a semiconductor processing system 100 is shown. The semiconductor processing system 100 includes a precursor source 102, a chamber device 200 including a chamber body 300, an exhaust source 104, and a controller 106. The precursor source 102 is connected to the chamber device 200 via a precursor supply conduit 108 and is configured to provide a flow of a material layer precursor 10 to the chamber device 200. The chamber device 200 is connected to the exhaust source 104 and is configured to expose a substrate 2 supported in the chamber device 200 to the material layer precursor 10 under selected environmental conditions (e.g., temperature and pressure) so that a material layer 4 is deposited onto an upper surface 6 of the substrate 2. The exhaust source 104 is connected to the chamber device 200 via an exhaust conduit 110, is fluidically coupled to an external environment 8 outside the semiconductor processing system 100 (e.g., via a vacuum pump 112 and / or an abatement device such as a scrubber), and is configured to convey a flow of residual material layer precursors and / or reaction products 12 to the external environment 8.

[0045] It is contemplated that the controller 106 may be operably connected to one or more of the precursor source 102, the chamber apparatus 200, and the exhaust source 104 to control the deposition of the material layer 4 onto the substrate 2. In this regard, the controller 106 may be connected to one or more of the precursor source 102, the chamber apparatus 200, and the exhaust source 104 via a wired or wireless link 114 to control the temperature of the substrate 2 and / or the pressure within the chamber body 300. The temperature of the substrate 2 may be controlled, for example, using a heater element and / or a temperature sensor included in the chamber apparatus 200 and operably associated with the controller 106. The pressure within the chamber body 300 may be controlled using a vacuum pump included in the exhaust source 104.

[0046] In some examples, the material layer precursor 10 may include one or more silicon-containing material layer precursors. Examples of suitable silicon-containing material layer precursors include non-halogenated silicon-containing material layer precursors, such as silane (SiH4) and disilane (Si2H6), and halogenated silicon-containing material layer precursors, such as dichlorosilane (H2SiCl2) and trichlorosilane (HCl3Si). According to some examples, the material layer precursor 10 may include alloy components, such as germanium-containing material layer precursors, such as germanium (GeH4), gallium-containing material layer precursors, such as triethylgallium Ga(C2H5)3, or indium-containing material layer precursors, such as trimethylindium ((CH3)3In). It is conceivable that in some examples, the material layer precursor 10 may include one or more dopant-containing material layer precursors. Examples of suitable dopant-containing material layer precursors include p-type dopants such as boron (B) and arsenic (As) and n-type dopants such as phosphorus (P) and antimony (Sb). It is contemplated that the material layer precursor 10 may be co-flowed with a diluent / carrier gas such as hydrogen (H2) or nitrogen (N2) and / or an etchant such as hydrochloric acid (HCl) or chlorine (Cl2), according to some examples.

[0047] As used herein, the term "substrate" may refer to any one or more underlying materials, including any one or more underlying materials that may be modified or on which a device, circuit, or film may be formed. The substrate may be continuous or non-continuous; rigid or flexible; solid or porous; and combinations thereof. The substrate may be in any form, such as (but not limited to) a powder, a plate, or a workpiece. The substrate in plate form may include wafers of various shapes and sizes, including, for example, 300 mm wafers.

[0048] The substrate may be formed of a semiconductor material, including, for example, silicon (Si), silicon germanium (SiGe), silicon oxide (SiO2), gallium arsenide (GaAs), gallium nitride (GaN), and silicon carbide (SiC). The substrate may include a pattern or may be unpatterned, such as a so-called blanket substrate. For example, a substrate in powder form may be used in drug manufacturing. The porous substrate may include one or more polymers. Examples of workpieces may include medical devices (e.g., stents and syringes), jewelry, tool equipment, components for battery manufacturing (e.g., anodes, cathodes, or separators), or components of photovoltaic cells, etc.

[0049] The continuous substrate can extend beyond the boundaries of the processing chamber where the deposition process occurs. In some processes, the continuous substrate can be moved through the processing chamber so that the process continues until the end of the substrate is reached. A continuous substrate can be provided from a continuous substrate feed system to allow the continuous substrate to be manufactured and output in any suitable form. Non-limiting examples of continuous substrates may include thin sheets, nonwoven films, rolls, foils, nets, flexible materials, bundled continuous filaments or fibers (e.g., ceramic fibers or polymer fibers). The continuous substrate may also include a carrier or thin sheet on which one or more non-continuous substrates are mounted.

[0050] refer to Figure 2 , a chamber arrangement 200 is shown. In the example shown, the chamber arrangement 200 includes a chamber body 300, an injection flange 202, and an exhaust flange 204. In the example shown, the chamber arrangement 200 also includes an upper heater element array 206, a lower heater element array 208, a pyrometer 210, and a lift and rotation module 212. Although shown and described herein as having certain elements and a particular architecture, such as a single substrate cross-flow architecture, it should be understood and appreciated that semiconductor processing systems having chamber arrangements including other elements and / or excluding elements may also benefit from the present disclosure.

[0051] The chamber body 300 is formed of a ceramic material 302 and has an upper wall 304, a lower wall 306, a first side wall 308, and a second side wall 310. The upper wall 304 extends longitudinally between an injection end 312 and a longitudinally opposite discharge end 314. The lower wall 306 is separated from the upper wall 304 by an interior 316 of the chamber body 300 and may be substantially parallel to the upper wall 304 of the chamber body 300. The first side wall 308 couples the lower wall 306 of the chamber body 300 to the upper wall 304 of the chamber body 300, longitudinally spans the injection end 312 and the discharge end 314 of the chamber body 300, and may be substantially orthogonal relative to either (or both) of the lower wall 306 and the upper wall 304 of the chamber body 300. The second side wall 310 is similar to the first side wall 308 and is additionally laterally separated from the first side wall 308 by a lateral width of the interior 316 of the chamber body 300. It is contemplated that the chamber body 300 may have a plurality of external ribs 318 extending transversely around the exterior surfaces of the upper wall 304, the lower wall 306, the first side wall 308, and the second side wall 310, and the plurality of external ribs 318 are longitudinally spaced apart from each other between the injection end 312 and the exhaust end 314 of the chamber body 300. It is also contemplated that the injection flange 202 abuts the injection end 312 of the chamber body 300 and couples the precursor supply conduit 108 to the chamber body 300, the exhaust flange 204 abuts the exhaust end 314 of the chamber body 300 and couples the chamber body 300 to the exhaust conduit 110, and the injection flange 202 couples the gate valve 214 and the substrate transfer robot 216 to the chamber body 300. In some examples, the ceramic material 302 may include a transparent ceramic material, such as a ceramic material that is transparent to electromagnetic radiation in the infrared band. Examples of suitable transparent materials include quartz, fused silica, and sapphire. Although shown and described herein as having a particular number of external ribs 318, it should be understood and appreciated that chamber body 300 may have fewer or more external ribs than shown and described herein and still be within the scope of the present disclosure.

[0052] The upper heater element array 206 is configured to heat the substrate 2 (e.g., using electromagnetic radiation in the infrared band) during deposition of the material layer 4 onto the upper surface 6 of the substrate 2, and in this regard is supported above the chamber body 300, optically coupled to the interior 316 of the chamber body 300 through the upper wall 304 of the chamber body 300, and includes a plurality of upper heater elements 218. The plurality of upper heater elements 218 may each include a linear filament, may extend laterally above the upper wall 304 of the chamber body 300 and between the first side wall 308 and the second side wall 310, and may be longitudinally spaced apart from each other between the injection end 312 and the exhaust end 314 of the chamber body 300. The lower heater element array 208 may be similar to the upper heater element array 206, additionally supported below the chamber body 300, and also include a plurality of lower heater elements 220. The plurality of lower heater elements 220 may extend longitudinally between the injection end 312 and the discharge end 314 of the chamber body 300 and may be laterally spaced apart from one another between the first sidewall 308 and the second sidewall 310 of the chamber body 300. In some examples, the plurality of lower heater elements 220 may be substantially orthogonal relative to the plurality of upper heater elements 218. According to some examples, either (or both) of the upper heater element array 206 and the lower heater element array 208 may include bulb-type lamps and still be within the scope of the present disclosure.

[0053] It is contemplated that the chamber apparatus 200 includes one or more internal temperature sensors, such as thermocouples disposed within the chamber body 300, or one or more external temperature sensors, such as optical temperature sensors supported external to the chamber body and optically coupled to the interior 316 of the chamber body 300 through a wall of the chamber body 300. In this regard, the pyrometer 210 can be configured to obtain temperature measurements of the substrate 2 during deposition of the material layer 4 onto the upper surface 6 of the substrate 2, and can be supported above the chamber body 300. In another aspect, the pyrometer 210 can be disposed along an optical axis 222 that intersects a substrate support 224 disposed within the interior 316 of the chamber body 300 and configured to place the substrate 2 thereon, the pyrometer 210 being optically coupled to the interior 316 of the chamber body 300 through an upper wall 304 of the chamber body 300. The temperature measurement may be acquired using electromagnetic radiation emitted by either (or both) the substrate 2 and the material layer 4 during deposition onto the upper surface 6 of the substrate 2 and transmitted along the optical axis 222 through the ceramic material 302 forming the upper wall 304 of the chamber body 300. In some examples, the pyrometer 210 may cooperate with one or more second pyrometers supported above the upper wall 304 of the chamber body 300 and disposed along one or more optical axes intersecting the substrate support 224. According to some examples, the pyrometer 210 may cooperate with one or more quartz pyrometers, such as pyrometers external to the chamber body 300, configured to acquire the temperature of the ceramic material 302 using electromagnetic radiation emitted by the chamber body 300. Examples of suitable pyrometers include those shown and described in U.S. Patent Application Publication No. 2022 / 0298672A1 to M'Saad, filed on March 17, 2022, the contents of which are incorporated herein by reference in their entirety.

[0054] As shown and described herein, the chamber apparatus 200 further includes a divider 226, a support member 228, and an axis member 230. The divider 226 is formed of an opaque material 232 (e.g., a material that is opaque to electromagnetic radiation in the infrared band), is located within the interior 316 of the chamber body 300, divides the interior 316 into an upper chamber 234 and a lower chamber 236, and defines a divider hole 238 through which the upper chamber 234 is coupled to the lower chamber 236. The substrate support 224 is supported within the divider hole 238 for rotation R about a rotation axis 240, can be formed of an opaque material 242, such as a material that is opaque to electromagnetic radiation in the infrared band, and is operably associated with the lift and rotate module 212 via the support member 228 and the axis member 230. In this regard, the support member 228 can be disposed within the lower chamber 236 of the chamber body 300 along the rotation axis 240 and is rotationally fixed relative to the substrate support 224. The shaft member 230 may be arranged along the rotation axis 240, extending through a channel 320 defined in the lower wall 306 of the chamber body 300, and extending therefrom to a tube body 322 (e.g., a tube body 322) protruding from the lower wall 306 below the chamber body 300 and substantially coaxial with the rotation axis 240. Figure 5 In some examples of the present disclosure, either (or both) of the opaque material 232 and the opaque material 242 may include a carbonaceous material or a ceramic material. Examples of suitable carbonaceous materials include graphite and pyrolytic carbon; examples of suitable ceramic materials include silicon carbide. According to some examples, either (or both) of the support member 228 and the shaft member 230 may be formed of a ceramic material 302.

[0055] As described above, certain manufacturing techniques used to manufacture the chamber body may introduce artifacts into the structure of the chamber body. For example, welding techniques such as hydrogen (H2) gas welding may impose residual stresses into the ceramic welds formed using the welding technique due to the local characteristics of the heating used to form the weld. The welding technique may also cause the ceramic welds to deviate in size from the expected geometry of the ceramic welds formed using the welding technique, such as by changing the flatness and / or contour of the resulting fillets formed using the welding technique. Residual stresses can usually be eliminated using a post-weld annealing operation, although at the expense of additional manufacturing cycle time, typically corresponding to the number of welds that require post-weld annealing. Dimensional deviations may be more difficult to correct post-weld, requiring dimensional tolerances to be expanded to reflect the processing capabilities of the welding technique used to manufacture the chamber body and / or higher scrap rates due to dimensional inconsistencies. And even so, some material layer deposition processes may be sensitive to welding artifacts, such as welding artifacts generated in the chamber structure where external heating elements and / or temperature sensors are optically coupled to the substrate during processing. In order to limit (or eliminate) such artifacts from affecting the reliability of the chamber assembly 200, the chamber body 300 is formed as a welded piece 324 having an upper wall 304 that is fabricated from a single quartz workpiece 305 (e.g., Figure 7 ) is formed to limit the number of parts joined by welding in the ceramic weld 324.

[0056] Reference Figure 3-6 , showing a ceramic weld 324. The ceramic weld 324 is made of a ceramic material 302 (such as Figure 2 309 (e.g., formed of or substantially consisting of) and may include an upper wall 304, a lower wall 306, a first side wall 308, and a second side wall 310. The ceramic weld 324 may also include an injection end flange 326, a discharge end flange 328, a plurality of first side rib segments 330, and a plurality of second side rib segments 332. It is contemplated that the ceramic weld 324 has an upper wall unwelded ribbed region 309 (e.g., Figure 3 ) and the unwelded ribbed area 311 (as shown Figure 4), each defined by a discrete single ceramic workpiece using subtractive manufacturing techniques. Advantageously, forming the upper wall unwelded ribbed area 309 and the lower wall unwelded ribbed area 311 using subtractive manufacturing techniques can simplify the manufacture of the ceramic weldment 324 by limiting the number of welds required to manufacture the ceramic weldment. Forming the upper wall unwelded ribbed area 309 and the lower wall unwelded ribbed area 311 using subtractive manufacturing techniques can also limit the skill level required to manufacture the ceramic weldment 324 due to the dimensional stability imparted by the ribs defined using subtractive manufacturing techniques, which resist deformation during the welding operation of coupling the flange and side rib segments to the ceramic weldment. More advantageously, forming the upper wall unwelded ribbed area 309 and the lower wall unwelded ribbed area 311 using subtractive manufacturing techniques can improve the optical properties of these areas, which are free of welding and / or casting artifacts that would otherwise exist if the ribs were welded in place or cast in place—the ceramic weldment 324 is uncast in this regard. As used herein, the term "weld" refers to a thermal bond, connection, or structure that joins two elements by a process involving softening or melting the ceramic material within at least one element such that the materials of the elements are fixed to each other upon cooling, the welded elements thereby being structurally fixed to each other upon cooling. Although shown and described herein as having certain elements, it should be understood and appreciated that ceramic weld 324 may include additional elements and / or exclude elements shown and described herein in other examples of the present disclosure and still be within the scope of the present disclosure.

[0057] Reference Figure 3 , a portion of a ceramic weldment 324 including an upper wall 304 is shown. It is contemplated that the ceramic weldment 324 can have an integral single-piece machined structure. In this regard, it is contemplated that the upper wall 304 has an upper wall plate portion 334 and an upper wall rib portion 336 that defines an upper wall unwelded rib region 309 (e.g., consisting of or substantially consisting of). The upper wall plate portion 334 extends longitudinally between an injection side edge 338 and a discharge side edge 340 that is longitudinally opposite the injection side edge 338. The upper wall plate portion 334 also extends transversely between a first longitudinal edge 342 and a second longitudinal edge 344. The first longitudinal edge 342 connects the injection side edge 338 and the discharge side edge 340. The second longitudinal edge 344 is transversely opposite the first longitudinal edge 342, connects the injection side edge 338 to the discharge side edge 340, and is separated from the first longitudinal edge 342 by the upper wall rib portion 336 of the upper wall 304. It is contemplated that the upper wall rib portion 336 of the upper wall 304 defines a plurality of upper wall rib segments 346 to form an outer rib 318 ( Figure 2 As used herein, the term "integral one-piece machined structure" means an integral one-piece structure with no intervening welds and no welding or casting artifacts that could alter the dimensions or optical properties of the structure.

[0058] In some examples, the first longitudinal edge 342 can be substantially parallel to the second longitudinal edge 344. The first longitudinal edge 342 can be substantially orthogonal to the injection side edge 338 and / or the discharge side edge 340. According to some examples, the plurality of upper wall rib segments 346 can be substantially parallel to either (or both) of the injection side edge 338 and the discharge side edge 340. The plurality of upper wall rib segments 346 can be substantially orthogonal to either (or both) of the first longitudinal edge 342 and the second longitudinal edge 344 of the upper wall panel portion 334. The plurality of upper wall rib segments 346 can be substantially orthogonal to the interior 316 (e.g., the interior portion 316) of the chamber body 300. Figure 2 The upper chamber 234 (as shown) Figure 2 The upper wall inner surface 348 (as shown) Figure 2 shown) are substantially orthogonal.

[0059] The injection end flange 326 is configured to receive the injection flange 202 ( Figure 2 304 ), and is longitudinally adjacent to the upper wall panel portion 334. The injection end flange 326 is further coupled to the upper wall 304 by an injection end flange to upper wall weld 350. The injection end flange to upper wall weld 350 extends transversely between the injection end flange 326 and an injection side edge 338 of the upper wall panel portion 334 of the upper wall 304. In some examples, the injection end flange to upper wall weld can extend continuously and uninterruptedly along the injection side edge 338.

[0060] The discharge end flange 328 is configured to receive the discharge flange 204 ( Figure 2 304 ), and is longitudinally opposite to the injection end flange 326. In this regard, it is contemplated that the discharge end flange 328 is separated from the injection end flange 326 by the upper wall plate portion 334 and is connected to the upper wall 304 by the discharge end flange and upper wall weld 352. The upper wall rib portion 336 of the upper wall 304 further longitudinally separates the discharge end flange and upper wall weld 352 from the injection end flange and upper wall weld 350. The discharge end flange and upper wall weld 352 further extends transversely between the discharge end flange 328 and the discharge side edge 340 of the upper wall plate portion 334 of the upper wall 304. In some examples, the discharge end flange and upper wall weld 352 can extend continuously and uninterruptedly along the discharge side edge 340 of the upper wall plate portion 334 of the upper wall 304.

[0061] The plurality of first side rib segments 330 are configured to couple the upper wall rib segment 346 of the upper wall 304 to the lower wall rib segment 370 (eg, Figure 4 As shown), to form a space around the chamber body 300 (as shown Figure 1 The outer rib 318 (as shown) extends Figure 2In this regard, it is contemplated that the plurality of first side rib segments 330 may be opposite to the transverse end surface of the upper wall rib segment 346. On the other hand, it is also contemplated that the plurality of first side rib segments 330 are coupled to the upper wall rib segment 346 via a plurality of first side rib segment and upper wall welds 354, each of the plurality of first side rib segment and upper wall welds 354 coupling one of the plurality of first side rib segments 330 to one of the upper wall rib segments 346.

[0062] In some examples, one or more of the plurality of first side rib segments and upper wall welds 354 may extend along only a portion of the side end surface of the upper wall rib segment 346, which is coupled to the corresponding first side rib segment 330 by one or more of the plurality of first side rib segments and upper wall welds 354. According to some examples, one or more of the plurality of first side rib segments and upper wall welds 354 may extend continuously and uninterruptedly along the side end surface of the upper wall rib segment 346, which is coupled to the corresponding first side rib segment 330 upper wall rib segment 346. It is contemplated that one or more of the plurality of first side rib segments and upper wall welds 354 may also extend along the first longitudinal edge 366 of the upper wall panel portion 334 of the upper wall 304. It is also contemplated that one or more of the plurality of first side rib segments and the upper wall welds 354 may not connect the first longitudinal edge 366 to one of the plurality of first side rib segments 330 connected by one or more of the plurality of first side rib segments and the upper wall welds 354, and one or more of the plurality of first side rib segments 330 float relative to the first longitudinal edge 342 of the upper wall panel portion 334 of the upper wall 304, and still be within the scope of the present disclosure.

[0063] The second plurality of side rib segments 332 are similar to the first plurality of side rib segments 330 and in this respect are also configured to couple the upper wall rib segments 346 of the upper wall 304 to the lower wall rib segments 370 of the lower wall 306 ( Figure 4 As shown), to form a space around the chamber body 300 ( Figure 1 The outer rib 318 (shown) extends Figure 2 On the other hand, it is contemplated that the plurality of second side rib segments 332 are opposite to the transverse end face of the upper wall rib segment 346, which is laterally opposite to the transverse end face opposite to the plurality of first side rib segments 330, and the plurality of second side rib segments 332 are coupled to the upper wall rib segment 346 via the plurality of second side rib segment and upper wall welds 356. It is contemplated that each of the plurality of second side rib segment and upper wall welds 356 can couple a corresponding one of the plurality of second side rib segments 332 to a corresponding one of the plurality of upper wall rib segments 346.

[0064] In some examples, one or more of the plurality of second side rib segment and upper wall welds 356 may extend only along a portion of the side end surface of the upper wall rib segment 346, which is coupled to the corresponding second side rib segment 332 by one or more of the plurality of second side rib segment and upper wall welds 356. According to some examples, one or more of the plurality of second side rib segment and upper wall welds 356 may extend continuously and uninterruptedly along the transverse end surface of the upper wall rib segment 346, which is coupled to the corresponding second side rib segment 332 by one or more of the plurality of second side rib segment and upper wall welds 356. It is contemplated that one or more of the plurality of second side rib segment and upper wall welds 356 may extend along the second longitudinal edge 344 of the upper wall panel portion 334 of the upper wall 304, whereby one or more of the plurality of second side rib segment and upper wall welds 356 couples a corresponding one of the plurality of second side rib segments 332 to the upper wall panel portion 334 of the upper wall 304. It is also conceivable that one or more of the multiple second side rib segment and upper wall welds 356 may not connect the second longitudinal edge 344 to one of the multiple second side rib segments 332 connected by one or more of the multiple second side rib segment and upper wall welds 356, and one or more of the multiple second side rib segments 332 floats relative to the second longitudinal edge 344 of the upper wall panel portion 334 of the upper wall 304, and still be within the scope of the present invention.

[0065] Reference Figure 4 , a portion of a ceramic weldment 324 including a lower wall 306 is shown. The lower wall 306 may be similar to the upper wall 304 of the chamber body 300 (eg, Figure 2 306 can have a unitary one-piece machined structure. On the other hand, the lower wall 306 can have a lower wall plate portion 358 and a lower wall rib portion 360, which define a first single quartz workpiece, such as a single quartz workpiece 305 (such as a quartz workpiece 306) formed using a subtractive manufacturing technique. Figure 7 The lower wall unwelded ribbed area 311 is formed by a lower wall rib portion 360 (as shown). The lower wall panel portion 358 extends longitudinally between an injection side edge 362 and a longitudinally opposite discharge side edge 364. The lower wall panel portion 358 also extends transversely between a first longitudinal edge 366 and a second longitudinal edge 368 of the lower wall panel portion 358. It is contemplated that the first longitudinal edge 366 connects the injection side edge 362 of the lower wall panel portion 358 to the discharge side edge 364. It is also contemplated that the second longitudinal edge 368 also connects the injection side edge 338 to the discharge side edge 340 and is further laterally separated from the first longitudinal edge 366 by a lower wall rib portion 360 of the lower wall 306. It is also contemplated that the lower wall rib portion 360 of the lower wall 306 extends from the lower wall panel portion 358 of the lower wall 306 along a line that is aligned with the first side wall 308 (as shown). Figure 2 as shown) and the second side wall 310 (as shown Figure 2The lower wall rib portion 360 extends in the opposite direction to the lower wall rib portion 358 (shown), and the lower wall rib portion 360 defines a plurality of lower wall rib segments 370, and the plurality of lower wall rib segments 370 are orthogonal to the lower wall plate portion 358 of the lower wall 306.

[0066] In some examples, the first longitudinal edge 366 of the lower panel portion 358 can be substantially parallel to the first longitudinal edge 342 of the upper panel portion 334 of the upper wall 304. The first longitudinal edge 366 can also be substantially orthogonal with respect to either (or both) of the injection side edge 362 of the lower panel portion 358 and the discharge side edge 364 of the lower panel portion 358. According to some examples, the second longitudinal edge 368 of the lower panel portion 358 can be substantially parallel to the first longitudinal edge 366 of the lower panel portion 358. The second longitudinal edge 368 of the lower panel portion 358 can also be orthogonal with respect to either (or both) of the injection side edge 362 of the lower panel portion 358 and the discharge side edge 364 of the lower panel portion 358. It is contemplated that the lower wall rib portion 360 can define a plurality of lower wall rib segments 370. The plurality of lower wall rib segments 370 can be substantially parallel to either (or both) of the injection side edge 362 and the discharge side edge 364 of the lower panel portion 358. The plurality of lower wall rib segments 370 may be substantially orthogonal relative to either (or both) the first longitudinal edge 366 and the second longitudinal edge 368 of the lower wall panel portion 358 of the lower wall 306. The plurality of lower wall rib segments 370 may be substantially orthogonal to the lower wall interior surface 372 ( Figure 2 ), which defines the interior 316 ( Figure 2 The lower chamber 236 (shown) Figure 2 shown).

[0067] The injection end flange 326 may be opposite to the injection side edge 362 of the lower wall panel portion 358. The injection end flange 326 may be further coupled to the lower wall panel portion 358 of the lower wall 306 by an injection end flange to lower wall weld 374. The injection end flange to lower wall weld 374 may extend transversely between the injection end flange 326 and the injection side edge 362 of the lower wall panel portion 358. In this regard, the injection end flange to lower wall weld 374 may extend continuously and uninterruptedly between the first side wall 308 and the second side wall 310 of the chamber body 300. The discharge end flange 328 is similarly opposite to the discharge side edge 364 of the lower wall panel portion 358 and coupled to the lower wall 306 by a discharge end flange to lower wall weld 376. The lower wall rib portion 360 of the lower wall 306 may longitudinally separate the discharge end flange to lower wall weld 376 from the injection end flange to lower wall weld 374. The discharge end flange to lower wall weld 376 can extend transversely between the discharge end flange 328 and the discharge side edge 364 of the lower wall panel portion 358. In this regard, the discharge end flange to lower wall weld 376 can extend continuously and uninterruptedly between the first side wall 308 and the second side wall 310 of the chamber body 300.

[0068] The plurality of first side rib segments 330 may be adjacent to a lower wall rib segment 370 defined by a lower wall rib portion 360 of the lower wall 306. In this regard, the plurality of first side rib segments 330 may be coupled to the lower wall 306 by a plurality of first side rib segment to lower wall welds 378. The plurality of first side rib segment to lower wall welds 378 may extend between a portion of one of the plurality of first side rib segments 330 and a corresponding one of the plurality of lower wall rib segments 370. In certain examples, the plurality of first side rib segment to lower wall welds 378 may extend between portions of the plurality of first side rib segments 330 and the lower wall rib segment 370 of the lower wall 306. For example, one or more of the plurality of first side rib segment to lower wall welds 378 may extend between one or more of the plurality of first side rib segments 330 and the first longitudinal edge 366 of the lower wall panel portion 358 of the lower wall 306.

[0069] The plurality of second side rib segments 332 can be similar to the plurality of first side rib segments 330, and in this respect can abut the plurality of lower wall rib segments 370 of the lower wall rib portion 360 of the lower wall 306. It is contemplated that the plurality of second side rib segments 332 can abut the plurality of lower wall rib segments 370 at a position laterally opposite the plurality of first side rib segments 330. It is also contemplated that the plurality of second side rib segments 332 can be coupled to the plurality of lower wall rib segments 370 by a plurality of second side rib segment to lower wall welds 380. The plurality of second side rib segment to lower wall welds 380 can extend between the plurality of lower wall rib segments 370 and the plurality of second side rib segments 332. In some examples, one or more of the plurality of second side rib segment to lower wall welds 380 can extend only between a corresponding one of the plurality of second side rib segments 332 and the lower wall panel portion 358 of the lower wall 306. In such an example, one or more of the plurality of second side rib segments to lower wall welds 380 may be truncated or shortened relative to one of the plurality of second side rib segments 332 coupled thereto to the ceramic weld 324 .

[0070] Reference Figure 5 , a portion of a ceramic weld 324 including a first side wall 308 is shown. The first side wall 308 may be coupled to the lower wall 306 of the chamber body 300 by a first side wall to upper wall weld 382. The first side wall to upper wall weld 382 may be formed between the upper wall plate portion 334 ( Figure 3 ) of the first longitudinal edge 342 (shown in Figure 3 ) extending longitudinally between, for example, the upper wall panel portion 334 ( Figure 3 The implant side edge 338 (shown in FIG. Figure 3 ) and the discharge side edge 340 (shown in FIG. Figure 3The first side wall 308 may also be coupled to the lower wall 306 of the chamber body 300 by a first side wall and lower wall weld 384, which may be formed between the first side wall 308 and the lower wall panel portion 358 (as shown in FIG. Figure 4 In some examples, the first side wall and lower wall weld 384 can extend between the injection side edge 362 (as shown) of the lower wall panel portion 358 of the lower wall 306 of the chamber body 300. Figure 4 ) and the discharge side edge 364 (as shown Figure 4 As shown), it extends longitudinally continuously and uninterruptedly between the two sides.

[0071] The injection end flange 326 may be connected to the first side wall 308 by the injection end flange and the first side wall weld 388. The injection end flange and the first side wall weld 388 may be formed on the upper wall plate portion 334 ( Figure 3 The injection side edge 338 (shown) Figure 3 ) and the lower wall plate portion 358 (shown) of the lower wall 306 Figure 4 The injection side edge 362 (shown) Figure 4 304 and the lower wall 306). In this regard, the injection end flange and the first side wall weld 388 can further extend continuously and uninterruptedly longitudinally along the first side wall 308 between the injection side edge 338 of the upper wall panel portion 334 of the upper wall 304 and the injection side edge 362 of the lower wall panel portion 358 of the lower wall 306. The discharge end flange 328 can be connected to the first side wall by the discharge end flange and the first side wall weld 390. The discharge end flange and the first side wall weld 390 can similarly extend between the injection side edge 338 of the upper wall panel portion 334 of the upper wall 304 and the injection side edge 362 of the lower wall panel portion 358 of the lower wall 306. In some examples, the discharge end flange and the first side wall weld 390 can extend continuously and uninterruptedly between the injection side edge 338 of the upper wall panel portion 334 of the upper wall 304 and the injection side edge 362 of the lower wall panel portion 358 of the lower wall 306.

[0072] It is contemplated that the plurality of first side rib segments 330 laterally overlie the first side wall 308. In certain examples, the plurality of first side rib segments 330 may float relative to the first side wall 308. In this regard, one or more of the plurality of first side rib segment to lower wall welds 378 may be separate from one of the plurality of first side rib segment to upper wall welds 354, which couples a common one of the plurality of first side rib segments 330 to the ceramic weld 324 via an unwelded rib portion 392 (e.g., no weld), the common one of the plurality of first side rib segments 330 coupled to the ceramic weld 324 being movable relative to the first side wall 308. In light of this disclosure, one skilled in the art will appreciate that this may simplify the manufacture of the chamber body 300, for example by limiting residual stresses during manufacture of the ceramic weld 324 (thereby eliminating the need to anneal the ceramic weld 324 prior to a subsequent welding event) that allows movement between the plurality of first side rib segments 330 and the first side wall 308 due to heating during manufacture of the chamber body 300. It can also limit (or eliminate) dimensional changes that may be associated with cyclic heating and cooling of the chamber body 300 during the sequential deposition of material layers onto the substrate, thereby potentially improving the performance of the chamber apparatus 200 (including the chamber body 300). Figure 1 ) of a semiconductor processing system 100 (shown) Figure 1 reliability.

[0073] Reference Figure 6 , a portion of a ceramic weld 324 including a second side wall 310 is shown. The second side wall 310 may be coupled to the lower wall 306 of the chamber body 300 by a second side wall and upper wall weld 394. The second side wall and upper wall weld 394 may be formed between the second side wall 310 and the upper wall plate portion 334 (e.g., Figure 3 The second longitudinal edge 344 (as shown) Figure 3 334) and extending longitudinally therebetween, for example, between the injection side edge 338 (as shown in FIG. Figure 3 ) and the discharge side edge 340 of the upper wall panel portion 334 (as shown Figure 3 It is contemplated that the second side wall 310 may also be coupled to the lower wall 306 of the chamber body 300 via a second side wall and lower wall weld 396. The second side wall and lower wall weld 396 may be coupled to the lower wall panel portion 358 (as shown) of the second side wall 310 and the lower wall 306. Figure 4 In some examples, the second side wall and lower wall weld 396 can extend between the injection side edge 338 (shown) of the lower wall panel portion 358 of the lower wall 306 of the chamber body 300. Figure 4 shown) and the discharge side edge 364 ( Figure 4 As shown), it extends longitudinally continuously and uninterruptedly along the second side wall 310.

[0074] The injection end flange 326 may be connected to the second side wall 310 by the injection end flange and the second side wall weld 398. The injection end flange and the second side wall weld 398 may be formed on the upper wall plate portion 334 ( Figure 3 The injection side edge 338 (shown) Figure 3 ) and the lower wall plate portion 358 (shown) of the lower wall 306 Figure 4 The injection side edge 362 (shown) Figure 4 The discharge end flange 328 may be connected to the first side wall by a discharge end flange and second side wall weld 301. The discharge end flange and second side wall weld 301 may similarly extend along the second side wall 310 between the injection side edge 338 of the upper wall panel portion 334 of the upper wall 304 and the injection side edge 362 of the lower wall panel portion 358 of the lower wall 306. In some examples, the discharge end flange and second side wall weld 301 may extend continuously and uninterruptedly between the injection side edge 338 of the upper wall panel portion 334 of the upper wall 304 and the injection side edge 362 of the lower wall panel portion 358 of the lower wall 306.

[0075] It is contemplated that the plurality of second side rib segments 332 laterally cover the second side wall 310. In certain examples, the plurality of second side rib segments 332 may float relative to the second side wall 310. In this regard, at least one of the plurality of second side rib segment to lower wall welds 380 may be separate from one of the plurality of second side rib segment to upper wall welds 356, the plurality of second side rib segment to upper wall welds 356 coupling a common one of the plurality of second side rib segments 332 to the ceramic weld 324 by not welding the second side rib portion 303, the common one of the plurality of second side rib segments 332 coupled to the ceramic weld 324 being movable relative to the second side wall 310. As described above, only partially coupling one or more of the plurality of second side rib segments 332 such that a portion of the one or more second side rib segments 332 floats relative to the second side wall 310 may further simplify the manufacture of the chamber body 300 by limiting residual stresses within the ceramic weld 324 during manufacture, thereby limiting (or eliminating) the need to anneal the ceramic weld 324 between certain welding operations. As described above, only partially coupling one or more of the plurality of second side rib segments 332 such that a portion of the one or more second side rib segments 332 floats relative to the second sidewall 310 can also limit (or eliminate) dimensional changes that may be associated with cyclic heating and cooling of the chamber body 300 during sequential deposition of material layers onto a substrate, thereby improving the performance of a chamber apparatus 200 (e.g., a chamber body 300) having the chamber body 300. Figure 1 A semiconductor processing system 100 (shown in FIG. Figure 1 reliability.

[0076] Reference Figure 7-12 , showing a ceramic weldment for making a chamber body, such as chamber body 300 ( Figure 1 Ceramic welding part 324 (shown) Figure 3 The operation of the method 400 is shown in FIG. Figure 7 It can be imagined that the upper wall 304 ( Figure 1 304) is formed from a single quartz workpiece 305 using subtractive manufacturing techniques to limit the number of discrete parts that are joined during assembly of the chamber body 300. In this regard, it is contemplated that a machining operation is used to define the plurality of upper wall rib segments 346. It is contemplated that the machining operation used to form the plurality of upper wall rib segments 346 further defines an upper wall rib portion 336 and an upper wall plate portion 334 of the upper wall 304. In some examples, the machining operation (or another machining operation) may be used to define an injection-side edge 338 ( Figure 3 As shown), the discharge side edge 340 of the upper wall panel portion 334 ( Figure 3 ), a first longitudinal edge 342 of the upper wall panel portion 334, a second longitudinal edge 344 of the upper wall panel portion 334 ( Figure 3 shown) and the upper wall inner surface 348 ( Figure 2 It is also contemplated that the machining operation defines a plurality of upper wall rib segments 346 such that each is substantially parallel to each other, substantially parallel to the injection side edge 338 and the discharge side edge 340 of the upper wall panel portion 334, and substantially orthogonal relative to the first longitudinal edge 342 and the second longitudinal edge 344 of the upper wall panel portion 334 of the upper wall 304. Non-limiting examples of machining processes that may be used to form the upper wall panel portion 334 and the upper wall rib portions 336 of the upper wall 304 include milling, coring, sawing, grinding, and lapping.

[0077] In some examples, each of the twelve (12) upper wall rib segments 346 is defined by a single quartz workpiece 305 using subtractive manufacturing techniques. According to some examples, the lower wall 306 of the chamber body 300 may also (or alternatively) be formed using subtractive manufacturing techniques. In this regard, machining operations may similarly be used to form the lower wall plate portion 358 and the lower wall rib portion 360 of the lower wall 306 from a second single quartz workpiece (e.g., single quartz workpiece 307). In such examples, the plurality of lower wall rib segments 370 may be formed such that each is substantially parallel to each other, substantially parallel to the injection side edge 338 (e.g., the lower wall plate portion 358 of the lower wall 306) and substantially parallel to the injection side edge 338 (e.g., the lower wall plate portion 358 of the lower wall 306). Figure 4 ) and the discharge side edge 364 (as shown Figure 4), and relative to the first longitudinal edge 366 of the lower wall panel portion 358 of the lower wall 306 (as shown Figure 4 as shown) and a second longitudinal edge 368 (as shown Figure 4 In view of the present disclosure, it will be appreciated by those skilled in the art that forming either (or both) the upper wall 304 and the lower wall 306 avoids the use of discrete welds and associated welding operations to couple discrete rib segments to the ceramic weldment 324 ( Figure 3 304), thereby limiting the time and associated costs required to manufacture the ceramic weld 324. In view of this disclosure, those skilled in the art will also appreciate that using subtractive manufacturing techniques to form either (or both) the upper wall 304 and the lower wall 306 also avoids the need to anneal either (or both) the upper wall 304 and the lower wall 306 after welding to eliminate residual stresses. Limiting the need to anneal the ceramic weld 324 during manufacturing can in turn limit the time and associated costs required to manufacture the ceramic weld 324 included in the chamber body 300 ( Figure 1 The time and associated costs required for the ceramic weld 324 shown).

[0078] refer to Figure 8 Once the lower wall 306 is formed, the first side wall 308 and the second side wall 310 can be connected to the lower wall 306 by welding. In this regard, it is contemplated that by welding the first longitudinal edge 366 (e.g., the first longitudinal edge 366 of the lower wall panel portion 358 of the first side wall 308 and the lower wall 306 Figure 4 ) to form a first side wall and a lower wall weld 384 (as shown) Figure 5 ), the first side wall 308 is connected to the lower wall 306. By connecting the second longitudinal edge 368 (as shown in FIG. Figure 4 ) to form a second side wall and lower wall weld 396 (as shown Figure 6 As shown), the second side wall 310 (as Figure 2 306). In some examples, either (or both) of the first sidewall to lower wall weld 384 and the second sidewall to lower wall weld 396 can be formed using hydrogen (H2) gas welding techniques. Advantageously, using hydrogen (H2) gas welding techniques can limit (or eliminate) the risk of contaminants penetrating into the material forming either (or both) of the first sidewall to lower wall weld 384 and the second sidewall to lower wall weld 396 because no combustion products (no water vapor) are produced during hydrogen (H2) gas welding.

[0079] Reference Fig. 9 Once the first side wall 308 and the second side wall 310 are welded 384 ( Figure 5 ) and the second side wall is welded to the lower wall 396 ( Figure 6) is coupled to the lower wall 306, and the injection end flange 326 and the discharge end flange 328 can be coupled to the weld 324. In this regard, by forming an injection end flange and lower wall weld 374 (as shown in FIG. 1 ) between the injection end flange 326 and the injection side edge 362 of the lower wall 306, the injection end flange 326 and the discharge end flange 328 can be coupled to the weld 324. Figure 4 As shown), the injection end flange 326 can be connected to the injection side edge 362 of the lower wall 306 (as shown in FIG. Figure 4 On the other hand, the injection end flange and the first side wall weld 388 ( Figure 5 The injection end flange 326 is connected to the first side wall 308, and the injection end flange and the second side wall weld 398 (shown) are formed between the injection end flange 326 and the second side wall 310. Figure 6 As shown) to further connect the injection end flange 326 to the second side wall 310 ( Figure 2 By the discharge end flange 328 and the discharge side edge 364 of the lower wall 306 ( Figure 4 The discharge end flange is welded to the lower wall 376 (shown) Figure 4 As shown), a discharge end flange and first side wall weld 390 ( Figure 5 As shown), a discharge end flange and a second side wall weld 301 ( Figure 6 ), the discharge end flange 328 can be similarly coupled to the ceramic weld 324. In some examples, the passage 320 can then be defined in the lower wall 306, for example using a drilling or tapping process, and then the tube body 322 can be coupled to the lower wall 306 by aligning the tube body 322 to the passage 320, followed by forming the tube body and lower wall weld 311 (as shown). Fig.10 As described above, one or more of the aforementioned welds may be formed using hydrogen (H2) gas welding techniques.

[0080] Reference Fig.10 Once the injection end flange 326 and the discharge end flange 328 are coupled to the ceramic weld 324, the upper wall 304 can be joined to the ceramic weld 324. The upper wall 304 can be aligned to the first side wall 308, the second side wall 310 (such as Figure 2 Once aligned, the first side wall is welded to the upper wall 382 ( Figure 5 308 and the first longitudinal edge 366 (shown) of the upper wall panel portion 334 of the upper wall 304 may be formed on the first side wall 308 and the first longitudinal edge 366 ( Figure 4 As shown), the second side wall is welded to the upper wall 394 ( Figure 6The second longitudinal edge 368 (shown) is formed on the second side wall 310 and the upper wall panel portion 334 of the upper wall 304 Figure 4 As shown), the injection end flange is welded to the upper wall 350 ( Figure 3 The discharge end flange 326 is formed between the injection side edge 338 of the upper wall plate portion 334 of the upper wall 304, and the discharge end flange is welded to the upper wall 352 ( Figure 3 The discharge end flange 328 and the discharge side edge 340 (shown) are formed on the upper wall plate portion 334 of the upper wall 304. Figure 3 Advantageously, once formed, the upper wall 304 defines an unwelded ribbed region 309 (as shown). Figure 3 ), which covers and surrounds the channel 320 (as shown Figure 2 ), the unwelded ribbed area 309 has, for example, a diameter of at least 300 mm extending around the channel 320. Fig.12 As shown, the unwelded ribbed region 309 can limit cross-substrate material layer variations in certain material layers by 25% or more compared to a weld having welded upper ribs because optical effects (e.g., scattering and / or refraction) are not present in the ceramic weld 324 within the unwelded ribbed region 309 compared to a weld having a substrate support member covering the interior of the chamber body.

[0081] Reference Fig.11 , a plurality of first side rib segments 330 and a plurality of second side rib segments 332 are shown coupled to the ceramic weld 324. Coupling of the first plurality of first side rib segments 330 may be accomplished by registering a first one of the plurality of first side rib segments 330 to the ceramic weld 324 such that one of the plurality of first side rib segments 330 laterally overlaps one of the plurality of upper wall rib segments 346 and one of the plurality of lower wall rib segments 370, and covers a portion of the first side wall 308 intermediate one of the plurality of upper wall rib segments 346 and one of the plurality of lower wall rib segments 370. So registered, the first one of the plurality of first side rib segments ( Figure 3 346, and the first of the plurality of first side rib segments 330 and the lower wall weld 378 is formed between the first of the plurality of first side rib segments 330 and the one of the plurality of upper wall rib segments 346. It is contemplated that the remainder of the plurality of first side rib segments 330 may subsequently be sequentially registered with the ceramic weld 324 between the plurality of upper wall rib segments 346 and the plurality of lower wall rib segments 370, with or without an intermediate annealing operation, with appropriate consideration given to the associated residual stresses imparted to the ceramic weld 324.

[0082] The coupling of the second plurality of second side rib segments 332 can be similarly accomplished by aligning a first one of the plurality of second side rib segments 332 to the ceramic weld 324 such that one of the plurality of second side rib segments 332 laterally overlaps one of the plurality of upper wall rib segments 346 and one of the plurality of lower wall rib segments 370 laterally opposite one of the plurality of first side rib segments 330, and covers a portion of the second side wall 310 intermediate one of the plurality of upper wall rib segments 346 and one of the plurality of lower wall rib segments 370. Thus aligned, the plurality of second side rib segments are aligned with the first one of the upper wall welds 356 ( Figure 3 346, and the first of the plurality of second side rib segments 332 and the first of the plurality of upper wall rib segments 346 are similarly formed between the first of the plurality of second side rib segments 332 and the first of the plurality of upper wall rib segments 346. It is contemplated that the remainder of the plurality of second side rib segments 332 may thereafter be sequentially registered with the ceramic weld 324 between the plurality of upper wall rib segments 346 and the plurality of lower wall rib segments 370, with or without an intermediate annealing operation.

[0083] refer to Figure 13-15 , showing the manufacture of a chamber body (e.g., chamber body 300 ( Figure 1 Method 400 as shown). Fig.13 The method 400 may include forming an upper wall having a lower wall plate portion and a lower wall rib portion from a single quartz workpiece using a subtractive manufacturing technique, such as from a single quartz workpiece 305 (eg, Figure 7 As shown) is formed with an upper wall plate portion 334 (as shown Figure 7 ) and the upper wall rib portion 336 (as shown Figure 7 The upper wall 304 (as shown) Figure 2 ), as shown in block 402. The method 400 may also include forming a lower wall having a lower wall plate portion and a lower wall rib portion from a single quartz workpiece using a subtractive manufacturing technique, for example, from a single quartz workpiece 307 (as shown in FIG. Figure 7 As shown) is formed with a lower wall plate portion 358 (as shown Figure 7 as shown) and the lower wall rib portion 360 (as shown Figure 7 The lower wall 306 (as shown) Figure 2 As shown), as shown in box 404.

[0084] It is contemplated that method 400 includes forming a weldment, such as ceramic weldment 324 (eg, Figure 3 As shown in block 406, the method 400 may include coupling the first side wall to the lower wall panel portion using a first side wall and lower wall weld, such as using a first side wall and lower wall weld 384 ( Figure 5 As shown) the first side wall 308 ( Figure 2As shown in block 408, method 400 may also include coupling the second side wall to the lower plate portion of the lower wall using a lower wall and lower plate portion weld, such as using a second side wall and lower wall weld 396 ( Figure 6 As shown) the second side wall 310 ( Figure 3 4) connected to the lower wall panel portion of the lower wall, as shown in block 408. As shown in block 410, the method 400 may also include forming an upper wall to first side wall weld, such as first side wall to upper wall weld 382 (as shown in block 410), between the upper wall panel portion of the upper wall and the first side wall. Figure 5 As shown in block 412, the method 400 may also include forming an upper wall and a second side wall weld, such as a second side wall and upper wall weld 394 (as shown in block 414), between the upper wall plate portion of the upper wall and the second side wall. Figure 6 ), coupling the upper wall to the second side wall, as shown in block 414. Advantageously, once coupled to the first and second side walls, the upper wall may define an unwelded ribbed region covering the interior of the chamber body, such as covering the interior 316 ( Figure 2 The unwelded ribbed area 309 (shown) Figure 3 4), as shown in block 414. The unwelded ribbed region 309 may have fewer welding artifacts than other regions of the upper wall, such as a lateral peripheral region laterally adjacent to the first sidewall and / or the second sidewall and / or a longitudinal peripheral region laterally adjacent to the injection end flange and / or the discharge end flange, such as the injection end flange 326 ( Figure 3 ) and / or discharge end flange 328 ( Figure 3 ), as also shown in box 414.

[0085] Reference Fig.14 , it is contemplated that method 400 includes coupling the injection end flange and the discharge end flange to the ceramic weldment, as indicated by brackets 416 and 418. In this regard, method 400 may include aligning the injection end flange to the lower wall of the chamber body, such as to the lower wall plate portion of the lower wall, as indicated by block 420. In another aspect, method 400 may further include aligning the injection side edge of the upper wall to the injection end flange, such as injection side edge 338 (e.g., Figure 3 ), as shown in block 424. Once the injection end flange is aligned to the lower wall of the chamber body, the injection end flange can be welded to the lower wall using injection end flange and lower wall welding, such as injection end flange and lower wall welding 374 (as shown in FIG. Figure 4 422). Similarly, once the upper wall is aligned to the injection end flange, the injection end flange can be welded to the upper wall by, for example, welding the injection end flange to the upper wall 350 (as shown in FIG. Figure 3426. It is also conceivable that the injection end flange is welded to the first side wall by welding the injection end flange to the first side wall, such as welding 388 of the injection end flange to the first side wall (such as Figure 5 The injection end flange is also welded to the second side wall 398 (as shown in FIG. Figure 5 ) is connected to the second side wall, as also shown in bracket 416.

[0086] It is contemplated that method 400 may further include aligning the discharge end flange to the lower wall of the chamber body, such as to the lower wall plate portion of the lower wall, as shown in block 428. It is also contemplated that method 400 may include aligning the discharge side edge of the upper wall to the injection end flange, such as 340 (e.g., 340) of the upper wall of the chamber body. Figure 3 432. Once registered to the lower wall of the chamber body, the discharge end flange may be welded to the lower wall using a discharge end flange to lower wall weld, such as discharge end flange to lower wall weld 376 (such as Figure 4 430. Similarly, once the upper wall is aligned to the discharge end flange, the discharge end flange can be welded to the upper wall by, for example, discharge end flange to upper wall weld 352 (as shown in FIG. Figure 3 434. It is also conceivable that the injection end flange is welded to the first side wall by the discharge end flange, for example, the discharge end flange is welded to the first side wall 390 (as shown in FIG. Figure 5 The discharge end flange is connected to the first side wall by welding the discharge end flange to the second side wall 301 (as shown in FIG. Figure 5 416) is further connected to the second side wall, as also shown in bracket 416.

[0087] Also like Fig.14 As shown, method 400 may include defining a passage in a ceramic weldment and coupling a tube body to the ceramic weldment, such as defining passage 320 (eg, Figure 4 As shown) and install the pipe body 322 (as shown Figure 4 436. The passage can be defined in the lower wall of the chamber body, such as through the lower wall plate portion of the lower wall of the chamber body, as shown in brackets 438. Once the passage is defined in the lower wall plate portion of the lower wall, the tube body can be welded to the lower wall by welding the tube body to the lower wall, such as the tube body to the lower wall weld 311 (as shown in brackets 436). Figure 4440). In some examples, the channel can be defined after the lower wall is defined using subtractive manufacturing techniques, also as shown in box 440. In view of the present disclosure, those skilled in the art will appreciate that this can simplify the manufacture of the chamber body, such as by avoiding the need to compensate for lower dimensional changes caused by welding of the lower rib and the lower wall during channel formation. According to some examples, the tube body can be coupled to the lower wall after the lower wall is formed using subtractive manufacturing techniques. More advantageously, this can also simplify the manufacture of the chamber body, such as avoiding the need to compensate for dimensional changes of the lower wall panel body during the formation of the tube body and the welding of the lower wall due to the stiffness provided by the lower wall rib portion of the lower wall formed using subtractive manufacturing techniques.

[0088] Reference Fig.15 It is contemplated that the method 400 may further include coupling the plurality of first side rib segments and the plurality of second side rib segments to the ceramic weldment, for example coupling the plurality of first side rib segments 330 ( Figure 3 as shown) and a plurality of second side rib segments 332 ( Figure 3 442 and 444. In this regard, the plurality of first side rib segments can be aligned to the ceramic weldment, for example, by laterally aligning the plurality of first side rib segments to the upper wall rib segments of the upper wall and the lower wall rib segments of the lower wall, for example, by laterally aligning the plurality of first rib segments to the upper wall rib segments 346 of the upper wall (as shown in FIG. Figure 3 ) and the lower wall rib section 370 of the lower wall (as shown Figure 3 ), as shown in block 446. On the other hand, the plurality of first side rib segments can be welded to the upper wall by the plurality of first side rib segments, for example, the plurality of first side rib segments are welded to the upper wall 354 (as shown in block 446). Figure 3 As shown) and connected to the upper wall rib segment, and the plurality of first side rib segments can be welded to the lower wall by the plurality of first side rib segments, for example, the plurality of first side rib segments are welded to the lower wall 378 (as shown) Figure 4 448 and 450. In some examples, the welds connecting one or more of the plurality of first side rib segments can be spaced apart from one another by at least a portion of the first side wall, with the one or more first side rib segments floating relative to the first side wall, as shown in block 452. Advantageously, floating one or more of the plurality of first side rib segments relative to the first side wall can limit stresses within the ceramic weld during manufacturing, for example by allowing the side wall to flex in response to heating, limiting the need to anneal the chamber to relieve residual stresses associated with the weld. Floating one or more of the plurality of first side rib segments relative to the first side wall can also limit dimensional changes in the chamber body associated with cyclic heating and cooling of the chamber body during processing, potentially extending the useful life of the chamber body.

[0089] The coupling of the plurality of second side rib segments can be similarly achieved by registering the plurality of second side rib segments to the upper wall rib segments of the upper wall and the lower wall rib segments of the lower wall at positions laterally opposite to the plurality of first side rib segments, as shown in block 454. Once registered, the plurality of second side rib segments can be welded to the upper wall by the plurality of second side rib segments, such as the plurality of second side rib segments welded to the upper wall 356 (e.g., Figure 3 As shown) and connected to the upper wall rib segment, and the plurality of second side rib segments can be welded to the lower wall by the plurality of second side rib segments, for example, the plurality of second side rib segments are welded to the lower wall 380 (as shown) Figure 4 456 and 458. In some examples, the welds connecting one or more of the plurality of second side rib segments may be spaced apart from one another by at least a portion of the second side wall, with the one or more first side rib segments floating relative to the second side wall, as shown in block 460. Advantageously, floating one or more of the plurality of second side rib segments relative to the first side wall may further limit stresses within the ceramic weld during manufacturing, for example by similarly allowing the second side wall to flex in response to heating, potentially limiting the need to anneal the chamber to relieve residual stresses associated with the weld. Floating one or more of the plurality of second side rib segments relative to the second side wall may similarly further limit dimensional changes in the chamber body associated with cyclic heating and cooling of the chamber body during processing, also potentially extending the useful life of the chamber body. As shown in block 462, the ceramic weld may additionally be annealed after one or more of the aforementioned welding events, although the number and / or duration of one or more annealing operations may be less due to the use of the above-described subtractive manufacturing techniques to form the upper and lower walls.

[0090] refer to Fig.16 , shows a method 500 of depositing a material layer onto a substrate located within a chamber body having an upper wall formed using a subtractive manufacturing technique, such as when located within chamber body 300 ( Figure 1 As shown) in the material layer 4 ( Figure 1 as shown) is deposited onto substrate 2 ( Figure 1 Method 500 includes placing a substrate on a substrate support disposed in a chamber, such as substrate support 224 (such as Fig.16 ), as shown in block 502. The method 500 also includes using one or more of an upper heater element array supported above the chamber body and a lower heater element array supported below the chamber body, such as the upper heater element array 206 ( Figure 2 ) and the lower heater element array 208 ( Figure 2 ) to heat the substrate, as shown in block 504. It is contemplated that the electromagnetic radiation is transmitted through an unwelded rib-like region of the chamber body, such as unwelded rib-like region 309 of the chamber body (such as Figure 3), as also shown in block 504. It is also contemplated that the substrate is exposed to a silicon-containing material layer precursor, such as material layer precursor 10 ( Figure 1 ), and depositing the silicon-containing material layer onto the substrate using the silicon-containing material layer precursor, as shown in blocks 506 and 508. It is also contemplated that heating of the substrate may be regulated during deposition of the material layer using a pyrometer optically coupled to the substrate and / or the material layer through an unwelded rib-like region of the upper wall of the chamber body during deposition onto the upper surface of the substrate, as shown in block 512. Advantageously, during deposition of the material layer onto the upper surface of the substrate, either (or both) of the upper heater array and the optical coupling of the pyrometer may limit variations in the material layer by not welding within substantially all of the unwelded rib-like regions of the upper wall of the chamber body covering the substrate.

[0091] The term "about" is intended to include the degree of error associated with the measurement of the particular quantity based on the equipment available at the time the application was filed.

[0092] The terms used herein are intended only to describe specific embodiments and are not intended to limit the present invention. As used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will also be understood that the terms "include" and / or "comprises" when used in this specification specify the presence of stated features, integers, steps, operations, elements, and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts, and / or combinations thereof.

[0093] Although the present disclosure has been described with reference to one or more exemplary embodiments, it will be appreciated by those skilled in the art that various changes may be made and elements thereof may be replaced with equivalents without departing from the scope of the present disclosure. In addition, many modifications may be made to adapt specific situations or materials to the teachings of the present disclosure without departing from the substantive scope of the present disclosure. Therefore, it is intended that the present disclosure is not limited to the specific embodiments disclosed as the best mode for implementing the present disclosure, but that the present disclosure will include all embodiments falling within the scope of the claims.

Claims

1. A chamber body, comprising: Ceramic welded parts with: lower wall; A side wall connected to the lower wall by welding the side wall to the lower wall; as well as The upper wall is connected to the side wall by welding the side wall and the upper wall, The upper wall has an upper wall plate portion formed from a single quartz workpiece using a subtractive manufacturing technique and an upper wall rib portion extending therefrom, and the upper wall has an unwelded rib-shaped area covering the lower wall.

2. The chamber body according to claim 1, wherein: The ceramic welding part also includes: An injection end flange is connected to the upper wall by welding the injection end flange to the upper wall; The discharge end flange is coupled to the upper wall by welding the discharge end flange to the upper wall, wherein the ceramic weldment is substantially composed of quartz.

3. The chamber body according to claim 1, wherein The side wall is a first side wall, the chamber body has a second side wall extending parallel to the first side wall, the second side wall is connected to the lower wall by welding the second side wall to the lower wall, and the second side wall is connected to the upper wall by welding the second side wall to the upper wall.

4. The chamber body according to claim 3, wherein: The lower wall has a lower wall rib extending in a direction opposite to the side wall and the upper wall of the ceramic welded part, and the ceramic welded part also has: A plurality of first side rib segments, which are connected to the upper wall rib portion by welding with the upper wall, and a plurality of first side rib segments are connected to the lower wall rib portion by welding with the lower wall; as well as A plurality of second side rib segments are welded to the upper wall rib portion through the plurality of second side rib segments and the upper wall, and a plurality of second side rib segments are welded to the lower wall rib portion through the plurality of second side rib segments and the lower wall.

5. The chamber body according to claim 3, wherein The lower wall has a lower wall plate portion separating the lower wall rib portion from the first and second side walls, and wherein the lower wall plate portion and the lower wall rib portion are formed from another single quartz workpiece using subtractive manufacturing techniques.

6. The chamber body according to claim 1, wherein The lower wall defines a channel and further includes a tube body registered to the channel and coupled to the lower wall at the channel by welding the tube body to the lower wall.

7. The chamber body according to claim 6, wherein: The upper wall has an upper wall unwelded ribbed region defined using subtractive manufacturing techniques extending around the passageway, and wherein the upper wall unwelded ribbed region has a diameter greater than 300 millimeters.

8. The chamber body according to claim 6, wherein The lower wall has a lower wall unwelded ribbed region extending around the channel, and wherein the lower wall unwelded ribbed region is defined by a first side wall to lower wall weld and a second side wall to lower wall weld laterally opposite the first side wall to lower wall weld.

9. The chamber body according to claim 8, wherein: The un-welded ribbed area of ​​the lower wall is defined by the welding of the injection end flange and the lower wall and the welding of the discharge end flange and the lower wall which are longitudinally opposite to the welding of the injection end flange and the lower wall.

10. A chamber device comprising: The chamber body of claim 1, wherein the lower wall defines a passage, and the chamber body further comprises a tube body registered to the passage and coupled to the lower wall by welding the tube body to the lower wall; a substrate support disposed within the interior of the chamber body and supported for rotation about a rotation axis extending through the passage; a support member arranged along an axis of rotation and rotationally fixed relative to the substrate support; and a shaft member arranged along the axis of rotation and rotationally fixed relative to the support member, Therein, a shaft member extends through the passage and the tube body to operably couple the lift and rotate module to the substrate support.

11. The chamber arrangement according to claim 10, wherein The lower wall has an upper wall unwelded ribbed region extending around the channel, the chamber apparatus further comprising an upper heater element array having a plurality of upper heater elements supported above the upper wall of the chamber body and covering the substrate support, and wherein the upper wall unwelded ribbed region optically couples the plurality of upper heater elements to an interior of the chamber body.

12. The chamber arrangement of claim 11, further comprising a pyrometer supported above the chamber body and arranged along an optical axis intersecting the substrate support, wherein The upper wall un-welded ribbed area optically couples the pyrometer to the interior of the chamber body.

13. A semiconductor processing system comprising: A chamber apparatus comprising the chamber body of claim 1, wherein the chamber apparatus further comprises a substrate support disposed within an interior of the chamber body and configured to support a substrate during deposition of a material layer onto an upper surface of the substrate; a precursor source including a silicon-containing material layer precursor coupled to an injection end of the chamber body; and An exhaust source including a vacuum pump is coupled to an exhaust end of the chamber body and coupled through the chamber body to a precursor source.

14. A method of manufacturing a ceramic weldment for a chamber body, the method comprising: forming an upper wall having an upper wall plate portion and an upper wall rib portion extending from the upper wall plate portion from a first single quartz workpiece using a subtractive manufacturing technique; forming a lower wall having a lower wall plate portion and a lower wall rib portion extending from the lower wall plate portion from a second single quartz workpiece using a subtractive manufacturing technique; Connecting the first side wall to the lower wall by welding the first side wall to the lower wall; Connecting the second side wall to the lower wall by welding the second side wall to the lower wall; Connecting the upper wall plate portion of the upper wall to the first side wall by welding the first side wall to the upper wall; as well as The upper wall plate portion of the upper wall is coupled to the second side wall by welding the second side wall to the upper wall, whereby the upper wall defines an unwelded ribbed region covering the lower wall and separated from the lower wall by the first and second side walls.

15. The method according to claim 14, further comprising: Aligning the injection end flange to the injection side edge of the lower wall plate portion of the lower wall, and connecting the injection end flange to the lower wall by welding the injection end flange to the lower wall; as well as The injection side edge of the upper wall is aligned to the injection end flange, and the injection end flange is connected to the upper wall by welding the injection end flange to the upper wall.

16. The method according to claim 15, further comprising: aligning the discharge end flange to the discharge side edge of the lower wall plate portion of the lower wall and coupling the discharge end flange to the lower wall by welding the discharge end flange to the lower wall; as well as The discharge side edge of the upper wall is aligned to the discharge end flange, and the discharge end flange is connected to the upper wall by welding the discharge end flange to the upper wall.

17. The method according to claim 16, further comprising: defining a passage extending through a lower wall of the chamber body; as well as The tube body is coupled to the lower wall by welding the tube body to the lower wall, whereby the unwelded ribbed area of ​​the upper wall covers the channel and extends around the channel.

18. The method according to claim 14, further comprising: registering a plurality of first side rib segments to an upper wall rib portion of the upper wall and a lower wall rib portion of the lower wall; Connecting the plurality of first side rib segments to the upper wall rib portion by welding the plurality of first side ribs to the upper wall; as well as The plurality of first side rib segments are coupled to the lower wall rib portion by welding the plurality of first side ribs to the lower wall, whereby one or more of the plurality of first side rib segments float relative to the first side wall.

19. The method according to claim 18, further comprising: Annealing of ceramic welded parts; registering a plurality of second side rib segments to an upper wall rib portion of the upper wall and a lower wall rib portion of the lower wall; Connecting the plurality of second side rib segments to the upper wall rib portion by welding the plurality of second side ribs to the upper wall; as well as The plurality of second side rib segments are coupled to the lower wall rib portion by welding the plurality of second side ribs to the lower wall, whereby one or more of the plurality of second side rib segments float relative to the second side wall.

20. The method according to claim 14, wherein: The subtractive manufacturing technique includes one or more of milling, core drilling, and sawing to define at least one of an upper wall rib portion of an upper wall and a lower wall rib portion of a lower wall of the weldment.

21. A chamber body for a chamber device of a semiconductor processing system manufactured using the method of claim 14.

22. A material layer deposition method, comprising: at a chamber body including a ceramic weldment, the ceramic weldment having a lower wall, a side wall coupled to the lower wall by side-to-lower wall welding, and an upper wall coupled to the side wall by side-to-upper wall welding, the upper wall having an upper wall plate portion formed from a single quartz workpiece using a subtractive manufacturing technique and an upper wall rib portion extending therefrom, the upper wall also having an unwelded ribbed region covering the lower wall, positioning a substrate within the chamber body; heating the substrate using the upper array of heater elements; exposing the substrate to a silicon-containing material precursor; depositing a silicon-containing material layer onto a substrate using a silicon-containing material precursor; regulating heating of the substrate using the upper array of heater elements during deposition of the layer of silicon-containing material using the pyrometer; wherein the upper heater is optically coupled to the substrate via an unwelded rib-shaped region of the upper wall; wherein the pyrometer is optically coupled to the substrate via an unwelded ribbed region of the upper wall; and Thus, relative to a chamber body having welded ribbed areas of the upper wall that optically couple the upper heating element array and / or pyrometer to the substrate, the unwelded ribbed areas of the upper wall limit cross-substrate variations in material.

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