A process chamber and a semiconductor processing apparatus

Abstract

The present application discloses a process chamber and a semiconductor processing apparatus. The process chamber includes a chamber body having a first gas inlet hole at the top and a first gas outlet hole at the bottom; a substrate stage disposed at the bottom inside the chamber body for carrying wafers; and a quartz ring disposed at the bottom inside the chamber body and surrounding the substrate stage. The diameter of the quartz ring gradually decreases from top to bottom, and the height of the quartz ring is substantially equal to the height of the substrate stage. In the present application, since the diameter of the quartz ring gradually decreases from top to bottom, the flow path of the gas is changed, the eddy current at the top of the quartz ring disappears, and the gas flow inside the process chamber becomes more stable and uniform, so that the film thickness can be more uniform and the consistency of product quality is improved.

Description

Technical Field

[0001] This application relates to the field of microfabrication technology, and particularly to a process chamber and a semiconductor processing apparatus. Background Art

[0002] Microwave plasma chemical vapor deposition is a technology that uses microwave plasma to decompose chemical gas precursors under low-pressure conditions, and then deposits thin films on the surface of a substrate. It can be used to deposit high-quality diamond films, carbon nanotubes, graphene and other thin films. In a microwave plasma chemical vapor deposition apparatus, the structural design in the process chamber is the core technology of the apparatus, which directly affects the later process and use.

[0003] The process chamber mainly consists of a chamber body, a substrate stage and a quartz ring arranged in the chamber body. The wafer is carried on the substrate stage, and the quartz ring is arranged around the substrate stage to increase the plasma concentration above the wafer and improve the deposition efficiency. When the existing process chamber deposits thin films, the phenomenon of uneven film thickness may occur, and the product quality consistency is poor. Summary of the Invention

[0004] In view of the above technical problems, this application provides a process chamber and a semiconductor processing apparatus, which can improve the problem that the existing process chamber may produce the phenomenon of uneven film thickness and poor product quality consistency during thin film deposition.

[0005] To solve the above technical problems, in a first aspect, an embodiment of this application provides a process chamber, including:

[0006] A chamber body with a first gas inlet hole at the top and a first gas outlet hole at the bottom;

[0007] A substrate stage arranged at the bottom inside the chamber body for carrying wafers;

[0008] A quartz ring arranged at the bottom inside the chamber body and surrounding the substrate stage. The diameter of the quartz ring gradually decreases from top to bottom, and the height of the quartz ring is basically equal to the height of the substrate stage.

[0009] Optionally, the longitudinal section of the quartz ring is an isosceles trapezoid, and the angle between the waist and the vertical direction is 10-20°.

[0010] Optionally, a limiting structure is arranged on the inner side surface of the bottom of the chamber body for limiting the quartz ring.

[0011] Optionally, the limiting structure is a first annular groove arranged on the inner side surface of the bottom of the chamber body.

[0012] Optionally, the limiting structure includes an arc-shaped step provided on the inner side of the bottom of the chamber body, the arc-shaped step having the same radius as the bottom of the quartz ring, and the central angle of the arc-shaped step being less than 90°;

[0013] The quartz ring is abutted against the arc-shaped step for limiting.

[0014] Optionally, the limiting structure further includes a rib provided on the inner side of the bottom of the chamber body, the rib extending along the radial direction of the circle where the arc-shaped step is located, and the arc-shaped step being symmetric about the rib;

[0015] A first notch for cooperating with the rib is provided at the bottom of the quartz ring, and the quartz ring slides along the rib and abuts against the arc-shaped step.

[0016] Optionally, the chamber body includes:

[0017] A bottom plate having a second annular groove on its top surface, the first air outlet being provided at the bottom of the second annular groove, and a first boss being formed at the center of the second annular groove; the substrate stage is provided on the first boss;

[0018] An air sealing plate is provided on the top surface of the bottom plate to cover the second annular groove to form a first annular air cavity, a circular hollow portion is provided at the center of the air sealing plate to avoid the substrate stage; a second air inlet communicating with the first annular air cavity is provided on the air sealing plate; the limiting structure is provided on the air sealing plate;

[0019] An upper cover assembly is provided on the bottom plate to enclose a closed space with the bottom plate, and the first air inlet is provided on the upper cover assembly.

[0020] Optionally, there are a plurality of the second air inlets, which are evenly distributed circumferentially along the circular hollow portion;

[0021] Second notches corresponding to and communicating with the second air inlets one by one are provided at the edge of the first boss, and the second notches communicate with the first annular air cavity.

[0022] Optionally, a gas filter element is provided in the second notch, one end of the gas filter element communicating with the second air inlet and the other end communicating with the first annular air cavity.

[0023] Optionally, the upper cover assembly includes:

[0024] A cover body having an annular step on its outer side wall;

[0025] The gas distribution ring has a third annular groove on the inner side of its bottom. The gas distribution ring is sleeved on the outer side of the outer wall and supported on the annular step, so that the third annular groove forms a second annular gas chamber. The first intake hole is arranged on the gas distribution ring.

[0026] A through hole communicating with the second annular gas chamber is further arranged on the side wall of the cover body.

[0027] In a second aspect, the present application also provides a semiconductor process equipment, including the process chamber described in each of the above embodiments.

[0028] As described above, the process chamber of the present application may include: a chamber body, a substrate stage, and a quartz ring. The top of the chamber body is provided with a first intake hole, and the bottom is provided with a first outlet hole. The substrate stage is arranged at the bottom inside the chamber body, and the quartz ring is arranged at the bottom inside the chamber body and surrounds the substrate stage. The diameter of the quartz ring gradually decreases from top to bottom. During the process, process gas is introduced into the interior of the chamber body through the first intake hole at the top of the chamber body. After the process gas enters, it is dissociated into plasma, and then reacts and deposits a film on the wafer. The gas inside the chamber body is discharged through the first outlet hole at the bottom. Since the diameter of the quartz ring gradually decreases from top to bottom, the gas flow path is changed, so that the eddy current at the top of the quartz ring disappears, and the gas flow in the process chamber is more stable and uniform, thereby enabling the film thickness to be more uniform and improving the consistency of product quality. Description of the Drawings

[0029] The drawings here are incorporated into the specification and form a part of this specification, showing the embodiments consistent with the present application, and are used together with the specification to explain the principles of the present application. In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, for those of ordinary skill in the art, other drawings can also be obtained based on these drawings without creative efforts.

[0030] Figure 1 is a schematic structural diagram of a process chamber in the related art;

[0031] Figure 2 is Figure 1 a simulation diagram of the process carried out in the process chamber of

[0032] Figure 3 is a perspective three-dimensional structural diagram of the top view of a process chamber provided by an embodiment of the present application;

[0033] Figure 4 is Figure 3 a perspective three-dimensional structural diagram of the bottom view of the process chamber of

[0034] Figure 5 It is a top - view structural schematic diagram of a process chamber provided by an embodiment of the present application;

[0035] Figure 6 It is along Figure 5 The sectional structural schematic diagram along the A - A line in;

[0036] Figure 7 It is Figure 6 The simulation diagram of the process carried out in the process chamber of;

[0037] Figure 8 It is a structural schematic diagram of the inner bottom of a process chamber provided by an embodiment of the present application;

[0038] Figure 9 It is a structural schematic diagram of the inner bottom of another process chamber provided by an embodiment of the present application;

[0039] Figure 10 It is an exploded structural schematic diagram of a process chamber provided by an embodiment of the present application;

[0040] Figure 11 It is along Figure 5 The sectional structural schematic diagram along the B - B line in;

[0041] Figure 12 It is a mating schematic diagram between a bottom plate and a gas filter provided by an embodiment of the present application;

[0042] Figure 13 It is Figure 12 The enlarged structural schematic diagram of part A in;

[0043] Figure 14 It is a bottom - view structural schematic diagram of a gas - distributing ring provided by an embodiment of the present application.

[0044] The realization of the purpose of the present application, functional features and advantages will be further described with reference to the embodiments and the accompanying drawings. Through the above - mentioned drawings, the clear embodiments of the present application have been shown, and there will be more detailed descriptions hereinafter. These drawings and textual descriptions are not intended to limit the scope of the concept of the present application in any way, but to illustrate the concept of the present application to those skilled in the art by referring to specific embodiments. Detailed Embodiments

[0045] Here, the exemplary embodiments will be described in detail, and the examples are shown in the drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. On the contrary, they are only examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0046] Please refer to Figure 1 , Figure 1 which is a schematic structural diagram of a process chamber in the related art. The process chamber mainly consists of a chamber body 10a, a substrate stage 20a and a quartz ring 30a disposed in the chamber body 10a. The wafer is carried on the substrate stage 20a, the quartz ring 30a is disposed around the substrate stage 20a, gas enters from the top of the chamber body 10a and flows out from the bottom of the chamber body 10a. The quartz ring 30a can increase the plasma concentration above the wafer and improve the deposition efficiency. When the existing process chamber performs thin film deposition, a phenomenon of uneven film thickness may occur, and the product quality consistency is poor.

[0047] The applicant has conducted research and analysis on this problem. Please refer to Figure 2 , Figure 2 which is Figure 1 a simulation diagram of the process of the process chamber. Gas enters the process chamber from the top and flows out from two air outlets at the bottom (which can be combined with Figure 4 ). The arrows and the lines inside the process chamber in the figure are all simulation diagrams of the air flow paths. During the flow process, eddy currents will be formed at the top of the quartz ring 30a, as shown in the dotted box in the figure. This will affect the uniformity of the gas in the process chamber, and further cause uneven film thickness of the deposition, thus affecting the product consistency. Based on this, the present application provides a process chamber and a semiconductor process equipment.

[0048] Please refer to Figures 3 - 6 , Figure 3 which is a three-dimensional structural diagram of the top view of a process chamber provided by an embodiment of the present application, Figure 4 and Figure 3 which is a three-dimensional structural diagram of the bottom view of the process chamber, Figure 5 and Figure 6 which is a top view structural diagram of a process chamber provided by an embodiment of the present application, Figure 5 and

[0049] which is a cross-sectional structural diagram taken along the line A-A in Figure 3 . The process chamber may include: a chamber body 10, a substrate stage 20 and a quartz ring 30. Figure 4 . The top of the chamber body 10 is provided with a first air inlet 101 (such as Figure 5 ), and the bottom is provided with a first air outlet 102 (such as

[0050] ). The substrate stage 20 is disposed at the bottom inside the chamber body 10 for carrying the wafer. As shown in Figure 5 , the quartz ring 30 is disposed at the bottom inside the chamber body 10 and is disposed around the substrate stage 20. The diameter of the quartz ring 30 gradually decreases from top to bottom. As some examples, the side surface of the quartz ring 30 may be a smooth curved surface or an inclined surface, and the height of the quartz ring 30 is substantially equal to the height of the substrate stage 20.The working principle of the process chamber in this embodiment is as follows: Place the wafer on the substrate stage 20, and then introduce process gas into the interior of the chamber body 10 through the first gas inlet hole 101 at the top. After the process gas enters, it is dissociated into plasma, and the dissociation condition can be to apply microwave energy to the process gas. The plasma reacts and deposits a thin film on the wafer, and the gas (including by-products) inside the chamber body 10 can be discharged through the first gas outlet hole 102 at the bottom. In the process chamber of this embodiment, since the diameter of the quartz ring 30 gradually decreases from top to bottom, the gas flow path is changed, and the eddy current at the top of the quartz ring 30 disappears. Please refer to Figure 7 , Figure 7 is Figure 6 the simulation diagram of the process carried out in the process chamber, and the simulation principle is the same as Figure 2 , which will not be elaborated here. The gas flow in the process chamber is more stable and uniform, so that the film thickness can be more uniform, and the consistency of product quality is improved.

[0051] As an example where the side surface of a quartz ring 30 is an inclined surface, please continue to refer to Figure 6 , the longitudinal section of the quartz ring 30 can be an isosceles trapezoid, and the angle between the waist and the vertical direction is 10 - 20°, and a more stable gas flow can be obtained. Figure 7 is the simulation experiment result with the side surface of the quartz ring 30 inclined 15° from top to bottom outward. The result shows that compared with Figure 2 , there is no eddy current at the top of the quartz ring 30, so a more stable gas flow effect can be obtained.

[0052] In one embodiment, a limiting structure is provided on the inner side surface of the bottom of the chamber body 10 for limiting the quartz ring 30, which can prevent the quartz ring 30 from being eccentric and not coaxial with the chamber body 10, resulting in uneven film thickness of the thin film deposited on the wafer surface.

[0053] As an example of a limiting structure, please refer to Figure 8 , Figure 8 is the schematic structural diagram of the inner side of the bottom of a process chamber provided by an embodiment of the present application. The limiting structure 113 can be a first annular groove provided on the inner side surface of the bottom of the chamber body 10. During installation, the bottom of the quartz ring 30 can be directly embedded into the first annular groove to achieve positioning and ensure the coaxiality between the quartz ring 30 and the chamber body 10.

[0054] As another example of a limiting structure, please refer to Figure 9 , Figure 9FIG. 0 is a schematic structural view of the inner bottom of another process chamber provided by an embodiment of the present application. The limiting structure 113 includes an arc-shaped step 1131 provided on the inner bottom surface of the chamber body 10. The arc-shaped step 1131 has the same bottom radius as the quartz ring 30, and the central angle of the arc-shaped step 1131 is less than 90°. The quartz ring 30 abuts against the arc-shaped step 1131 for limiting. Exemplarily, the arc-shaped step 1131 can be formed by an arc-shaped retaining strip, or can be formed by welding two plates, namely a circular plate 113A and an annular plate 113B, where the central angle of the annular plate 113B is less than 90°, and the annular plate 113B is welded to the circular plate 113A to form the above-mentioned arc-shaped step 1131. Compared with Figure 8 the structure of, in this embodiment, assembling the quartz ring 30 does not require alignment operation. Place the quartz ring 30 at the bottom of the chamber body 10, and then abut it against the arc-shaped step 1131. The assembling operation is simpler.

[0055] Further, please refer to Figure 9 and Figure 10 , Figure 10 FIG. 10 is an exploded structural view of a process chamber provided by an embodiment of the present application. The limiting structure 113 may further include a rib 1132 provided on the inner bottom surface of the chamber body 10. The rib 1132 extends along the radial direction of the circle where the arc-shaped step 1131 is located, and the arc-shaped step 1131 is symmetric about the rib 1132. A first notch 301 cooperating with the rib 1132 is provided at the bottom of the quartz ring 30. The quartz ring 30 slides along the rib 1132 and abuts against the arc-shaped step 1131. During installation, fit the first notch 301 of the quartz ring 30 onto the rib 1132, and then push the quartz ring 30 along the rib 1132 towards the arc-shaped step 1131 until the quartz ring 30 abuts against the arc-shaped step 1131.

[0056] The limiting structure 113 of this embodiment can not only ensure the coaxiality between the quartz ring 30 and the chamber body 10, but also prevent the quartz ring 30 from rotating relative to the chamber body 10, so that each process can be carried out in an almost completely consistent environment, and the consistency of the process results can be improved.

[0057] It should be noted that the chamber body 10 is used to provide a sealed reaction environment, and the specific structural form of the chamber body 10 in each embodiment of the present application is not particularly limited. In one embodiment, please refer to Figure 6 and Figure 10 , the chamber body 10 may include: a bottom plate 11, a gas sealing plate 12, and an upper cover assembly 13.

[0058] A second annular groove 111 is provided on the top surface of the bottom plate 11, and the first air outlet hole 102 is provided at the bottom of the second annular groove 111. Please also refer to Figure 11 ,Figure 11 is a schematic cross-sectional structure view along the B-B line in Figure 5 . A first boss 112 is formed at the center of the second annular groove 111, that is, the second annular groove 111 is arranged around the first boss 112. The substrate stage 20 is arranged on the first boss 112. The air seal plate 12 is arranged on the top surface of the bottom plate 11 and covers the second annular groove 111 to form a first annular air cavity. A circular hollow portion 103 is provided at the center of the air seal plate 12 to avoid the substrate stage 20. The air seal plate 12 is provided with a second air inlet hole 104 communicating with the first annular air cavity. A limiting structure 113 is arranged on the air seal plate 12. Exemplarily, the air seal plate 12 may include a circular plate 113A and an annular plate 113B arranged on the top surface of the circular plate 113A. The outer diameters of the two are the same and they can be connected by welding. The central angle of the annular plate 113B is less than 90°, so that the aforementioned arc-shaped step 1131 can be formed. The upper cover assembly 13 is arranged on the bottom plate 11 to enclose a closed space with the bottom plate 11. The first air inlet hole 101 is arranged on the upper cover assembly 13.

[0059] In this embodiment, through the structural cooperation of the bottom plate 11 and the air seal plate 12, a first annular air cavity (refer to the second annular groove 111) can be formed at the bottom of the chamber body 10. The first annular air cavity serves as a buffer cavity / air equalizing cavity for gas discharge, which can make the air flow in the chamber body 10 more stable.

[0060] Preferably, a second boss 114 is further arranged on the first boss 112. The substrate stage 20 is supported on the second boss 114. The circular hollow portion 103 at the center of the air seal plate 12 cooperates with the second boss 114. Further preferably, the height of the second boss 114 is equal to the thickness of the air seal plate 12, so that after the air seal plate 12 is arranged on the top surface of the bottom plate 11 to cover the second annular groove 111, the whole surface is flat, which is convenient for the quartz ring 30 to slide horizontally and stably at the bottom of the chamber body 10 when installing the quartz ring 30.

[0061] In one embodiment, please continue to refer to Figure 10 , multiple second air inlet holes 104 can be arranged on the air seal plate 12 and are evenly distributed along the circumferential direction of the circular hollow portion 103, Figure 10 and six are taken as an example in . Second notches 105 corresponding to and communicating with the second air inlet holes 104 one by one are provided at the edge of the first boss 112. The second notches 105 communicate with the first annular air cavity (i.e., the second annular groove 111). Multiple uniformly distributed second air inlet holes 104 form multiple exhaust channels, so that the air flow uniformity can be further improved.

[0062] In one embodiment, please continue to refer to Figure 6 、 Figure 10 、 Figure 12 and Figure 13, a gas filter element 40 is further provided in the second notch 105. One end of the gas filter element 40 communicates with the second air inlet hole 104, and the other end communicates with the first annular air cavity (i.e., the second annular groove 111). Please refer to Figure 13 , the second notch 105 extends longitudinally to the bottom of the second annular groove 111, and there is a gap between the gas filter element 40 and the second annular groove 111 in the vertical direction to maintain the communication of the gas path.

[0063] In one embodiment, please refer to Figure 6 , Figure 10 , Figure 11 and Figure 14 , Figure 14 is a bottom view structural schematic diagram of an air distribution ring provided by an embodiment of the present application. The upper cover assembly 13 may include a cover body 131 and an air distribution ring 132. An annular step 1311 is provided on the outer side wall of the cover body 131. A third annular groove 106 is provided on the inner side of the bottom of the air distribution ring 132, that is, the wall thickness of the top of the air distribution ring 132 is greater than that of the bottom, and the outer wall of the air distribution ring 132 is flush, so as to form a third annular groove 106 on the inner side of the bottom (i.e., form a step). The air distribution ring 132 is sleeved on the outside of the outer side wall and supported on the annular step 1311 so that the third annular groove 106 forms a second annular air cavity 108. That is, after the bottom surface of the air distribution ring 132 is supported on the annular step 1311, together with the annular step 1311 and the vertical wall of the cover body 131, the third annular groove 106 is sealed to form a second annular air cavity 108, and the second annular air cavity 108 can equalize the gas to improve the uniformity of the intake air flow. The first air inlet hole 101 is provided on the air distribution ring 132, and a through hole 107 communicating with the second annular air cavity 108 is further provided on the side wall of the cover body 131. A plurality of through holes 107 may be uniformly provided along the circumferential direction of the side wall of the cover body 131 to improve the uniformity of the intake air.

[0064] As an example of the cover body 131, please continue to refer to Figure 10 and Figure 11 , the cover body 131 may include a first cylindrical side wall 1320, a first annular cover plate 1310 extending outward from the bottom of the first cylindrical side wall 1320, a second annular cover plate 1330 extending inward from the top of the first cylindrical side wall 1320, a second cylindrical side wall 1340 extending upward from the inner edge of the second annular cover plate 1330, and a top cover 1350 covering the top of the second cylindrical side wall 1340. The annular step 1311 is provided on the outside of the second cylindrical side wall 1340, and the through hole 107 may be provided on the second cylindrical side wall 1340 and above the annular step 1311.

[0065] The first annular cover plate 1310 is supported on the edge of the bottom plate 11. The first cylindrical side wall 1320 is disposed around the outside of the quartz ring 30 and has a height higher than that of the quartz ring 30. The first cylindrical side wall 1320 serves as the main occurrence area of the deposition process. The diameter of the second cylindrical side wall 1340 is smaller than the diameter of the quartz ring 30, and an air supply area and a plasma excitation area are formed above the quartz ring 30.

[0066] It should be noted that the cover body 131 may be an integrally formed structure or may be assembled from one or more parts, and the embodiments of the present application do not make special limitations.

[0067] The embodiments of the present application further provide a semiconductor process equipment, which includes the process chamber described in each of the above embodiments. Exemplarily, the semiconductor process equipment may be a microwave plasma chemical vapor deposition equipment.

[0068] For other working principles and processes of the semiconductor process equipment, refer to the description of the pressing device in the foregoing embodiments of the present invention, and details are not described herein again.

[0069] The above has introduced in detail a process chamber and a semiconductor process equipment provided by the present application. Specific examples are used in this article to elaborate on the principles and implementation manners of the present application. It should be noted that in the present application, the descriptions of each embodiment have their own emphases. For parts not detailed or recorded in a certain embodiment, reference may be made to the relevant descriptions of other embodiments.

[0070] It should be understood that the terms "comprising" and "including" indicate the presence of the described features, steps, operations, elements, components, items, types, and / or groups, but do not exclude the presence, appearance, or addition of one or more other features, steps, operations, elements, components, items, types, and / or groups. The terms "or", "and / or", "including at least one of the following" used in the present application can be interpreted inclusively, or mean any one or any combination. For example, "including at least one of the following: A, B, C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C", and again, "A, B or C" or "A, B and / or C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C". An exception to this definition only occurs when the combination of elements, functions, steps, or operations is inherently mutually exclusive in some way.

[0071] It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from each other. For example, without departing from the scope of the present disclosure, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, as used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context indicates otherwise.

[0072] It should be understood that the orientation or positional relationship indicated by the terms "top", "bottom", "upper", "lower", "vertical", "horizontal", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation on the present application.

[0073] The above are only the preferred embodiments of the present application, and do not limit the patent scope of the present application. The technical features of the technical solutions of the present application can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. Any equivalent structural or equivalent process transformation made by using the content of the specification and drawings of the present application, or directly or indirectly applied in other related technical fields, as long as the combination of these technical features does not conflict, shall be equally included in the patent protection scope of the present application.

Claims

1. A process chamber, characterized in that: include: The chamber body has a first air inlet at the top and a first air outlet at the bottom; A substrate carrier, arranged at the bottom of the chamber body, for carrying a wafer; A quartz ring is disposed at the bottom of the chamber body and surrounds the substrate stage, wherein the diameter of the quartz ring gradually decreases from top to bottom, and the height of the quartz ring is substantially equal to the height of the substrate stage; A limiting structure is provided on the inner side of the bottom of the chamber body, which is used to limit the quartz ring; The limiting structure includes an arc-shaped step arranged on the inner side of the bottom of the chamber body, the arc-shaped step has a radius equal to that of the bottom of the quartz ring, and a central angle of the arc-shaped step is less than 90°; The quartz ring is arranged against the arc-shaped step to perform position limiting.

2. The process chamber according to claim 1, characterized in that: The longitudinal cross section of the quartz ring is an isosceles trapezoid, and the angle between the waist and the vertical direction is 10-20 degrees.

3. The process chamber according to claim 1, characterized in that: The limiting structure further comprises a convex strip arranged on the inner side surface of the bottom of the chamber body, the convex strip extends along the radial direction of the circle where the arc-shaped step is located, and the arc-shaped step is symmetrical about the convex strip; The bottom of the quartz ring is provided with a first notch matched with the convex strip, and the quartz ring slides along the convex strip and abuts against the arc-shaped step.

4. The process chamber according to any one of claims 1 to 3, characterized in that: The chamber body comprises: The bottom plate has a second annular groove on the top surface, the first air outlet is arranged at the bottom of the second annular groove, a first boss is formed at the center of the second annular groove; the substrate carrier is arranged on the first boss; An air sealing plate is arranged on the top surface of the bottom plate and covers the second annular groove to form a first annular air cavity. A circular hollow portion is arranged at the center of the air sealing plate to avoid the substrate carrier. A second air inlet hole communicating with the first annular air cavity is arranged on the air sealing plate. The limiting structure is arranged on the air sealing plate. The upper cover assembly is arranged on the bottom plate to enclose a closed space with the bottom plate, and the first air inlet is arranged on the upper cover assembly.

5. The process chamber according to claim 4, characterized in that: The second air inlet holes are provided in plurality and are evenly distributed along the circumference of the circular hollow portion; The edge of the first boss is provided with a second notch which is in one-to-one correspondence with the second air inlet hole, and the second notch is in communication with the first annular air cavity.

6. The process chamber according to claim 5, characterized in that: A gas filter is provided in the second notch, one end of the gas filter is communicated with the second air inlet hole, and the other end of the gas filter is communicated with the first annular air cavity.

7. The process chamber according to claim 4, characterized in that: The upper cover assembly comprises: The cover body has an annular step on its outer side wall; An air-leveling ring, wherein a third annular groove is provided on the inner side of the bottom, the air-leveling ring is sleeved on the outer side of the outer wall and supported on the annular step so that the third annular groove forms a second annular air cavity, and the first air inlet hole is provided on the air-leveling ring; The side wall of the cover body is also provided with a through hole communicating with the second annular air cavity.

8. A semiconductor process equipment, characterized in that: A process chamber comprising any one of claims 1 to 7.

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