Dual chamber reactor for epitaxial deposition of semiconductor material on substrate

By designing a multi-chamber reactor, including an independent reaction chamber, an induction heating system and a liquid cooling system, the problem of difficulty in independent maintenance and operation between the reaction chambers is solved, and a more efficient and safe epitaxial deposition process of semiconductor materials is achieved.

CN119913607APending Publication Date: 2025-05-02LPE SPA
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Patent Information

Application Number
CN202411509834.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-10-31
Filing Date
2024-10-28
Publication Date
2025-05-02

AI Technical Summary

Technical Problem

The prior art is difficult to achieve independent maintenance and operation between reaction chambers in a multi-chamber reactor, which affects the efficiency and safety of the epitaxial deposition process of semiconductor materials.

Method used

A multi-chamber reactor is designed, including two independent reaction chambers, an induction heating system and a liquid cooling system, which enables fluid communication between the reaction chambers through a common reservoir and ensures independent cooling of each reaction chamber through independent pumps and heat exchangers.

Benefits of technology

Independent maintenance and operation between reaction chambers is achieved, the efficiency and safety of the epitaxial deposition process of semiconductor materials is improved, and the floor area of ​​the reactor is reduced.

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Abstract

A dual chamber reactor for epitaxially depositing a semiconductor material on a substrate comprises a first reaction chamber (100), a second reaction chamber (200), an induction heating system for the reaction chambers (100, 200), and a liquid flow cooling system for the reaction chambers (100, 200). According to some designs, a cooling system includes a reservoir (450) designed to contain a coolant and divided into a first reservoir portion (452) and a second reservoir portion (454) in fluid communication with each other. The two reaction chambers (100, 200) are typically located in two side-by-side but separate spaces.
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Description

Technical Field

[0001] A reactor for epitaxially depositing semiconductor material on a substrate is described below.

[0002] In particular, the semiconductor material to be deposited is silicon carbide, but other materials are not excluded.

[0003] The substrate to be deposited is also typically made of silicon carbide, but other materials are not excluded. Background Art

[0004] Reactors for epitaxial deposition of silicon carbide are well known.

[0005] In order to increase the output of a reactor, it is generally known to equip the reactor with at least two reaction chambers.

[0006] The advantage of (at least) a two-chamber reactor instead of two single-chamber reactors is that it is possible not to duplicate each reactor component, i.e. some components are used for both chambers. This also reduces the reactor footprint; this means that the footprint of the dual-chamber reactor is less than the sum of the footprints of the two single-chamber reactors.

[0007] From a design perspective, one could conceptually start with the design of a single-chamber reactor and investigate how to integrate two (or more) reactors. Summary of the invention

[0008] Therefore, it is desirable to integrate the reactor as well as possible.

[0009] In particular, it is desirable that the reaction chambers can be maintained separately and independently of each other, ie, while maintenance is performed on one chamber, another chamber may be operational for performing an epitaxial deposition process.

[0010] Some examples of innovative multi-chamber reactors include: a first reaction chamber, a second reaction chamber, an induction heating system for the first and second reaction chambers, and a liquid cooling system for the first and second reaction chambers; the cooling system includes a reservoir for containing and recirculating a cooling liquid; the reservoir includes a first reservoir portion and a second reservoir portion that are fluidically connected to each other.

[0011] Other examples of innovative multi-chamber reactor designs include: a first reaction chamber extending along a first longitudinal direction, a second reaction chamber extending along a second longitudinal direction, an induction heating system for the first and second reaction chambers, and a liquid cooling system for the first and second reaction chambers; the first longitudinal direction and the second longitudinal direction are parallel; the first reaction chamber and the second reaction chamber are located side by side in two spaces but are separated by at least a metal plate; the metal plate is configured to mechanically and / or fluidically and / or magnetically isolate the reaction chambers from each other. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Examples of innovative multi-chamber reactor designs will become more clear from the following detailed description taken in conjunction with the following drawings:

[0013] Figure 1 Some aspects of the innovative dual chamber reactor design are schematically shown, and

[0014] Figure 2 Other aspects of an example of an innovative dual chamber reactor design are shown schematically (and from above).

[0015] It will be readily appreciated that there are numerous ways of actually designing the innovative multi-chamber reactor and that they are defined in their main advantageous aspects in the appended claims and are not limited by the following detailed description or the accompanying drawings.

[0016] It should also be noted that the technical features described below in conjunction with the specific embodiments should not be considered to be closely related to each other and therefore should not be considered to restrict each other, even if they are advantageously combinable. DETAILED DESCRIPTION

[0017] Figure 1 and Figure 2 Different aspects of the same example of a reactor design 1000 for epitaxial deposition of semiconductor material on a substrate are schematically shown.

[0018] The reactor 1000 includes a first reaction chamber 100 and a second reaction chamber 200. According to other design examples, the number of reaction chambers may be greater than two.

[0019] In addition, the reactor 1000 includes a chamber heating system and a chamber cooling system. The heating system typically includes different and / or independent components for each chamber. The cooling system typically includes different and / or independent components for each chamber, but typically also includes at least one common reservoir.

[0020] exist Figure 2 In the drawing, the heating system is schematically indicated by reference numeral 300 . Figure 1 Some possible components of the heating system 300 are schematically shown, in particular (at least) one inductor 310 associated with or forming part of the first chamber and (at least) one inductor 320 associated with or forming part of the second chamber 200, as well as a power supply system 330 for supplying power to the inductors 310 and 320. Inductive heating for epitaxial reactor reaction chambers, in particular hot wall chambers for depositing silicon carbide, is known per se and will not be described in detail here.

[0021] exist Figure 2 In FIG. 4 , a cooling system is schematically shown with reference numeral 400 . Figure 1Again, some possible components of the cooling system 400 are schematically shown, which will be described in detail below. Figure 2 It is intended to illustrate the flow of a coolant, particularly water, which first enters a hollow wall (typically quartz) tube (element 110 of chamber 100 and element 210 of chamber 200), then flows along the tube, and finally exits the tube. Typically, cooling system 400 is designed to recirculate the coolant, such as Figure 2 shown.

[0022] refer to Figure 1 , the reactor 1000 comprises:

[0023] - a first reaction chamber 100,

[0024] - a second reaction chamber 200,

[0025] - an induction heating system for the first reaction chamber 100 and the second reaction chamber 200 (e.g. the set of components 310, 320 and 330), and

[0026] - A liquid cooling system for the first reaction chamber 100 and the second reaction chamber 200.

[0027] The heating system includes a power supply system 330 , which is generally composed of a first power supply 331 for heating the first reaction chamber 100 and a second power supply 332 for heating the second reaction chamber 200 .

[0028] The cooling system includes a reservoir 450 designed to contain and recirculate cooling liquid. The reservoir 450 includes a first reservoir portion 452 and a second reservoir portion 454; the first reservoir portion 452 and the second reservoir portion 454 are in fluid communication with each other. Figure 1 In the example of , the bottom of the first reservoir portion 452 and the bottom of the second reservoir portion 454 are flat and aligned; therefore, the bottom of the reservoir 450 is flat.

[0029] The first reservoir portion 452 and the second reservoir portion 454 may be in fluid communication via a conduit and / or a valve and / or a wall. Figure 1 In the example of FIG. 4 , such fluid communication occurs through a wall 456 of a predetermined height.

[0030] Advantageously, the first reservoir portion 452 and the second reservoir portion 454 are in fluid communication at a predetermined level, in particular relative to the bottom level of the reservoir 450; Figure 1As shown, such a predetermined level corresponds to the height of the wall 456 relative to the bottom of the reservoir 450, which in this case is flat and distinct. This means that if the liquid level is above the predetermined level, the reservoir 450 acts as a common reservoir for the chambers 100 and 200. If for some reason, in particular a malfunction or a rupture, the liquid level in the reservoir 450 drops below this predetermined level, each reservoir portion will be independent of the other portions and can allow independent liquid recirculation cooling, in particular the first portion 452 for the first chamber 100 and the second portion 454 for the second chamber 200, respectively.

[0031] exist Figure 1 In the exemplary reactor design shown, reaction chamber 100 and reaction chamber 200 include hollow wall tubes 110 and 210, respectively; the cavities of these tubes provide an annular conduit extending in the same longitudinal direction as the tubes and along their entire length or substantially their entire length. Each hollow wall of the tube is cooled by a cooling fluid flowing along the cavity. The cooling system is configured so that the coolant, particularly water, first flows from reservoir 450 to tubes 110 and 210 and then flows from tubes 110 and 210 back to reservoir 450. Figure 1 In the example of , the coolant enters the hollow wall tube on one side and flows out from the opposite side; along the way it absorbs heat and then heats up; if the inlet temperature is, for example, 20°C, the outlet temperature may be, for example, 30-40°C.

[0032] exist Figure 1 In the reactor example shown, the circulation of the cooling fluid is obtained by a pump. In particular, the cooling system comprises a first pump 410 and a second pump 420; the first pump 410 is in fluid communication with the first reservoir portion 452, and the second pump 420 is in fluid communication with the second reservoir portion 454. Preferably, the first pump 410 and the second pump 420 extract the coolant from the bottom of the first reservoir portion 452 and the second reservoir portion 454, respectively, and guide the coolant to the reaction chamber, in particular the chamber tube.

[0033] exist Figure 1 In FIG, a return conduit is schematically shown which drops directly into the reservoir portion from above and conveys the coolant from the reaction chamber, in particular from the chamber tube, into the reservoir. However, alternative configurations of this return conduit are foreseeable.

[0034] Advantageously, the cooling system comprises a liquid cooler; such a liquid cooler comprises a plurality of components, depending on its construction. The purpose of such a liquid cooler is to reduce the temperature of the coolant leaving the reaction chamber, in particular the temperature of the coolant leaving the chamber tubes. In fact, as already mentioned above, the coolant heats up when it flows into the reaction chamber and takes away heat from the reaction chamber, so it is advantageous to force cool it before it re-enters the reaction chamber, in particular the tubes of the reaction chamber.

[0035] According to a first design, the liquid cooler comprises a first heat exchanger 431 configured to cool a cooling liquid directed to the first tube 110 by a water flow from outside the reactor 1000; Figure 1 The use and writing of the indicator "H2O" ( Figure 1 The bottom of the diagram is used to illustrate the related lines. Figure 1 The heat exchanger 431 has been illustrated as an element in contact with the conduit leaving the first pump 410. In this case, the coolant is cooled by the heat exchanger after leaving the reservoir 450, in particular the first reservoir portion 452.

[0036] According to a second design, the liquid cooler comprises a second heat exchanger 432 configured to cool a cooling liquid directed to the second tube 210 by a water flow from outside the reactor 1000; such flow Figure 1 The use and writing of the indicator "H2O" ( Figure 1 The bottom of the diagram is used to illustrate the related lines. Figure 1 The heat exchanger 432 has been illustrated as an element in contact with the conduit leaving the second pump 420. In this case, the coolant is cooled by the heat exchanger after leaving the reservoir 450, in particular the second reservoir portion 454.

[0037] According to a third design, the liquid cooler comprises a third heat exchanger 435 configured to cool the cooling liquid present in the reservoir 450 by means of a water flow coming from outside the reactor 1000; this flow Figure 1 The use and writing of the indicator "H2O" ( Figure 1 The related lines at the bottom of the figure are shown schematically. Figure 1 The heat exchanger 435 is intended to cool the coolant present in the reservoir portion 452 and the reservoir portion 454 . Figure 1 The heat exchanger 435 has been illustrated as an element in contact with the bottom of the reservoir 450, in particular the bottom of the reservoir portion 452 and the bottom of the reservoir portion 454; in addition or alternatively, the heat exchanger may be in contact with the side walls of the reservoir 450, in particular the reservoir portion 452 and / or the reservoir portion 454. Alternatively, for example, the heat exchanger may consist of one or more coiled conduits inside the reservoir 450, in particular the reservoir portion 452 and / or the reservoir portion 454, intended to facilitate the flow of water from outside the reactor.

[0038] According to a fourth design, the liquid cooler comprises a fourth heat exchanger 431, which is configured to cool the cooling liquid from the first tube 110 by a water flow from outside the reactor 1000; such flow Figure 1 Use and write H2O( Figure 1 The bottom of the diagram is used to illustrate the related lines. Figure 1The heat exchanger 431 has been illustrated as an element in contact with the conduit leaving the tube 110. In this case, the coolant is cooled by the heat exchanger, in particular in the first reservoir portion 452, before returning to the reservoir 450.

[0039] According to the fifth embodiment, the liquid cooler comprises a fifth heat exchanger 432, which is configured to cool the cooling liquid from the second tube 210 by a water flow from the outside of the reactor 1000; such flow is Figure 1 Use and write H2O( Figure 1 The related lines at the bottom of the figure are shown schematically. Figure 1 The heat exchanger 432 has been illustrated as an element in contact with the conduit leaving the tube 210. In this case, the coolant is cooled by the heat exchanger before returning to the reservoir 450, particularly in the second reservoir portion 454, typically if exchangers 431 and 432 are present.

[0040] Among the various possibilities, it can be expected that for example there will be: A) only exchanger 435 or B) only exchangers 431 and 432 or C) exchangers 431 and 432 and 435 or D) only exchangers 433 and 434 or E) exchangers 433 and 434 and 435 or F) all exchangers 431 and 432 and 433 and 434 and 435.

[0041] The above refers to the cooling of the chamber, especially the chamber tubes, under normal operating conditions.

[0042] Such a cooling system is advantageous because the coolant content is known and / or controlled / controllable, because the coolant temperature (at different points in the circuit) can be known and / or controlled / controllable, and because the coolant flow (pressure and / or velocity) (at different points in the circuit) can be known and / or controlled / controllable.

[0043] This cooling system is also advantageous because it is at least partially "redundant" due to the division of the tank into (partially) independent parts. Moreover, since it is in particular an open circuit, it allows to protect the tubes of the reaction chamber, usually quartz, by maintaining a sufficient pressure, i.e. a low and controlled pressure.

[0044] Advantageously, however, even in the event of a fault and / or malfunction of the cooling system as described above, cooling of the chamber is required, ie the cooling system is based on a coolant contained in a tank, in particular a coolant recirculated, for example, by one or more pumps.

[0045] It should be noted that, in fact, the temperature within the reaction chamber [may] reach very high values ​​(at least 1000° C., but in the case of epitaxial deposition of silicon carbide at pressures of, for example, between 0.1 and 1.0 atm, also 1600° C. and higher), and flammable (e.g. hydrogen and / or methane) and / or toxic (e.g. silane) gases may flow into the reaction chamber.

[0046] For this purpose, the cooling system may advantageously include further components.

[0047] Essentially, if the cooling system fails (e.g., pump 410 or pump 420 fails, or there is a rupture in reservoir portion 452 or reservoir portion 454, or there is a rupture in tube 110 or tube 210) or fails (e.g., pump 410 and / or pump 420 fails), cooling of one or more chambers can be advantageously performed in another manner. In this case, a "rupture" (e.g., a tank or tank portion or pipe) is defined as an event that results in a fluid leak (even if small); for example, a leak may occur at a hydraulic connection.

[0048] For example, the cooling system can be configured to cool water taken from a water stream external to the reactor 1000 (the stream is Figure 1 ) into pipe 110 and / or pipe 210. This usually only occurs under predetermined conditions, especially in the event of a fault or malfunction. The valve ( Figure 1 For example, the control of these valves can be by, for example, an electronic control system ( Figure 1 (not shown) to achieve this. Figure 1 The ability to deliver H2O water (directly) to chambers 100 and 200 is provided by exit block 437 ( Figure 1 ) and vertical arrows from block 437 entering chambers 110 and 210; note that block 437 is not strictly required and will be shown below.

[0049] In this case, the cooling system is generally configured to discharge cooling water from pipe 110 and / or pipe 210. Figure 1 As shown, the outflow can be directed to the reservoir 450. Alternatively, since the cooling water comes from outside the reactor 1000, the outflow can be precisely directed to a special drain. The outflow can be manually and / or electrically controlled by a valve ( Figure 1 For example, the control of these valves can be performed by, for example, an electronic control system ( Figure 1 (not shown) to achieve this. Figure 1 , the ability to drain (directly) from chambers 100 and 200 is represented by the vertical arrows leaving the chambers at the top.

[0050] It should be noted that in Figure 1 In the figures, the inlets into the water and coolant conduits are shown (particularly in the lower figure) as being separate, but alternatively they may occur through the same conduit.

[0051] It should be noted that in Figure 1 In the drawings, the outlets of the water and coolant pipes are shown (particularly in the lower figure) as being separate, but alternatively they may occur through the same conduit.

[0052] The cooling system may be configured to treat water from outside the reactor before it flows into the tubes of the reactor chamber. For example, the treatment may be physical filtration.

[0053] The cooling system can be configured to reduce the water pressure before the water from the outside of the reactor flows into the reactor chamber tube. Since the chamber tube is fragile, it can be decided to send relatively low-pressure water (e.g. 0.2-1.7 bar, such as 1.5 bar), while the water received from the outside can be relatively high-pressure (e.g. 3-6 bar, such as 4 bar).

[0054] exist Figure 1 In, block 437 is designed to provide, for example, water processing (eg, water treatment, such as water filtration) and water pressure reduction.

[0055] refer to Figure 2 , the reactor 1000 includes (as shown in reference Figure 1 Partially shown):

[0056] - a first reaction chamber 100 extending along a first longitudinal direction L1,

[0057] - a second reaction chamber 200 extending along a second longitudinal direction L2,

[0058] - an induction heating system 300 for the first reaction chamber 100 and the second reaction chamber 200, and

[0059] - a liquid flow cooling system 400 for the first reaction chamber 100 and the second reaction chamber 200;

[0060] The first longitudinal direction L1 and the second longitudinal direction L2 are parallel.

[0061] The first reaction chamber 100 and the second reaction chamber 200 are located in two spaces 180 and 280 that are side by side but separated.

[0062] The separation is carried out by one or more (usually metal) plates and / or one or more (usually metal) panels.

[0063] This separation serves to mechanically and / or fluidically and / or magnetically isolate the reaction chambers from one another.

[0064] In particular, at least corresponding to the reaction chambers 100 and 200, a metal plate 510 is required; the metal plate 510 is configured to isolate the reaction chambers from each other at least magnetically.

[0065] The possibility of magnetic isolation is related to the fact that the heating system 300 is inductive (magnetic), so at least one inductor is required associated with each chamber. As can be seen from the figure, the inductor is usually a solenoid, surrounding the chamber tube and oriented in the longitudinal direction of the tube development.

[0066] In order to achieve good magnetic insulation, the material of the metal plate 510 preferably has high magnetic permeability.

[0067] In order to achieve good magnetic insulation, the material of the metal plate 510 is preferably aluminum or Permalloy, more preferably aluminum.

[0068] To achieve good magnetic insulation, the metal plate 510 is preferably solid and preferably 5-10 mm thick.

[0069] like Figure 2 As shown, the separation between the two gaps 180 and 280 may require a metal plate 510 for magnetic isolation and one or more metal panels 520 and 530 for mechanical and / or fluid isolation. Figure 2 As shown, the plate is positioned in a magnetically insulating as well as mechanically and fluidically insulating manner. Figure 2 As shown, the panels are positioned in a mechanically and fluidically insulating manner.

[0070] The possibility of mechanical isolation is related to the creation of two separate spaces, also for maintenance purposes and not only for the operation of the chamber.

[0071] The possibility of fluid isolation is associated with the possibility of (unwanted) gas leakage from the chamber; such leakage may also lead to an explosion.

[0072] For the sake of clarity (because from Figure 2 (which may not be apparent in the figure), note that plate 510 is located in the center (relative to the reactor support plane), at least the first panel (particularly panel 520) is located below (relative to the reactor support plane), and at least the second panel (particularly panel 530) is located above (relative to the reactor support plane).

[0073] The plate and any panels are preferably integral; however, they may provide (small) openings for routing cables and / or conduits.

[0074] exist Figure 2In the diagram, a system 700 for managing the exhaust gases leaving the reaction chambers is schematically shown - the figure shows the walls of its housing, which is box-shaped, for example. There is only one system for all reaction chambers. In this design, the system is located partly in the area of ​​the first reaction chamber 100 and partly in the area of ​​the second reaction chamber 200. The housing of the implant 700 also contributes to the separation of the two spaces 180 and 280.

[0075] exist Figure 2 In the reactor 1000 shown, other spaces can be seen in addition to the spaces 180 and 280 that accommodate the reaction chambers 100 and 200, in particular the "maintenance spaces" (610, 620 and 630), i.e., spaces where personnel can perform maintenance operations on the reactor, in particular on the reaction chambers of the reactor.

[0076] Typically, openable panels are provided for access to maintenance spaces; some panels may / should be warned; others can be opened freely.

[0077] Due to the wall 510 and / or panels 520 and 530, safe maintenance operations can be performed on one reaction chamber while the other reaction chamber is fully operational.

[0078] Preferably, at least one maintenance space is present, ie at least one space is present in addition to the space for the reaction chamber.

[0079] Generally speaking, in an innovation reactor:

[0080] - a first maintenance space 610 located at a first side of the reactor and adjacent to the space 180 of the first reaction chamber 100, and / or

[0081] - a second maintenance space 620 located at a second side of the reactor and adjacent to the space 280 of the second reaction chamber 200, and / or

[0082] The third maintenance space 630 is located in front of or behind the reactor and adjacent to the spaces 180 and 280 of the reaction chambers 100 and 200 .

[0083] The space 630 can be used, for example, for maintenance operations on the reaction chamber 100 or 200 (especially its gas inlet assembly) when it is retracted, for example due to special slides on which the reaction chamber can rest and move into the space 630. In case the first and / or second maintenance space (610, 620) is used, the third maintenance space can be adjacent to the spaces 180 and 610, and / or 280 and 620, if applicable.

[0084] Space 610 may be used, for example, to perform maintenance operations on reaction chamber 100, in particular, its gas exhaust components ( Figure 2For maintenance operations (not shown), the gas exhaust assembly may be referred to as an "exhaust cylinder" and is axially aligned with the reaction chamber near the system 700, which may be cylindrical.

[0085] Space 620 may be used, for example, to perform maintenance operations on reaction chamber 200, particularly on its gas exhaust components ( Figure 2 For maintenance operations (not shown), the gas exhaust assembly may be referred to as an "exhaust cylinder" and is axially aligned with the reaction chamber near the system 700, which may be cylindrical.

[0086] Obviously, the reactor 1000 may advantageously include Figure 1 The parts shown and Figure 2 Components shown, and may include other components.

[0087] Reactor 1000 can be protected by an outer shell, which can be continuous or partially interrupted and composed of one or more outer panels. One or more outer panels can laterally close the reactor to provide a lateral portion of the shell. When the reactor is in operation, one or more outer panels can also close the top and bottom of the reactor to provide the top and bottom of the shell.

[0088] The top of the reactor shell can advantageously include at least two panels adapted to swing open in the event of an overpressure (or explosion) in the reactor. For example, at least two panels can be hinged and adapted to open and provide a safety vent when the pressure inside the reactor exceeds a predetermined value.

Claims

1. A reactor (1000) for epitaxially depositing a semiconductor material on a substrate, wherein: The reactor comprises: a first reaction chamber (100), The second reaction chamber (200), an induction heating system for the first reaction chamber (100) and the second reaction chamber (200), and a liquid flow cooling system for the first reaction chamber (100) and the second reaction chamber (200); wherein the cooling system comprises a reservoir (450) designed to contain and recirculate a cooling liquid, The storage device (450) includes a first storage device portion (452) and a second storage device portion (454). Wherein, the first reservoir portion (452) and the second reservoir portion (454) are fluidically connected.

2. The reactor (1000) according to claim 1, wherein: The first reservoir portion (452) and the second reservoir portion (454) are in fluid communication via a conduit and / or a valve and / or a wall (456), in particular a wall of a predetermined height.

3. The reactor (1000) according to claim 1 or 2, wherein: The first tank portion (452) and the second tank portion (454) are in fluid communication at a predetermined level relative to a bottom level of the tank (450).

4. The reactor (1000) according to claim 1, 2 or 3, wherein: The first reaction chamber (100) comprises a first hollow wall tube (110), wherein the hollow wall is designed to be cooled by a flowing cooling fluid. The second reaction chamber (200) comprises a second hollow wall tube (210), wherein the hollow wall is designed to be cooled by a flowing cooling fluid. The cooling system is configured such that the coolant first flows from the reservoir (450) into the first tube (110) and the second tube (210), and then flows from the first tube (110) and the second tube (210) into the reservoir (450).

5. The reactor (1000) according to claim 4, wherein: The cooling system comprises a first pump (410) and a second pump (420), wherein the first pump (410) is fluidically connected to the first reservoir portion (452), in particular at the bottom of the first reservoir portion (452), and the second pump (420) is fluidically connected to the second reservoir portion (454), in particular at the bottom of the second reservoir portion (454).

6. The reactor (1000) according to claim 4 or 5, wherein: The cooling system includes a liquid cooler (431, 432, 433, 434, 435).

7. The reactor (1000) according to claim 6, wherein: The liquid cooler comprises a heat exchanger (435) configured to cool the cooling liquid present in the reservoir (450) by means of a water flow from outside the reactor (1000).

8. The reactor (1000) according to claim 6 or 7, wherein: The liquid cooler includes: a first heat exchanger (431) configured to cool the cooling liquid guided to the first tube (110), and / or a second heat exchanger (432) configured to cool the cooling liquid guided to the second tube (210) by a water flow from outside the reactor (1000).

9. The reactor (1000) according to claim 6, 7 or 8, wherein: The liquid cooler includes: a first heat exchanger (433) configured to cool the cooling liquid from the first tube (110); and / or a second heat exchanger (434) configured to cool the cooling liquid from the second tube (210) by a water flow from outside the reactor (1000).

10. The reactor (1000) according to any one of the preceding claims, wherein The cooling system is configured to flow cooling water taken from a water flow from outside the reactor (1000) into the first tube (110) and / or the second tube (210) under predetermined conditions, in particular in the event of a fault or malfunction.

11. The reactor (1000) according to claim 10, wherein: The cooling system is configured to process (437) water from outside the reactor (1000) before it flows into the first tube (110) and / or the second tube (210).

12. The reactor (1000) according to claim 10 or 11, wherein: The cooling system is configured to reduce the pressure (437) of water from outside the reactor (1000) before it flows into the first tube (110) and / or the second tube (210).

13. The reactor (1000) according to claim 10, 11 or 12, wherein: The cooling system is configured to flow cooling water from the first pipe (110) and / or the second pipe (210) into the tank (450).

14. The reactor (1000) according to claim 10, 11 or 12, wherein: The cooling system is configured to discharge the cooling water from the first pipe (110) and / or the second pipe (210) to a discharge device when the cooling water comes from outside the reactor (1000).

15. A reactor (1000) for epitaxially depositing a semiconductor material on a substrate, wherein: The reactor comprises: a first reaction chamber (100) extending along a first longitudinal direction (L1), a second reaction chamber (200) extending along a second longitudinal direction (L2), an induction heating system (300) for the first reaction chamber (100) and the second reaction chamber (200), and a liquid flow cooling system (400) for the first reaction chamber (100) and the second reaction chamber (200); wherein the first longitudinal direction (L1) and the second longitudinal direction (L2) are parallel, The first reaction chamber (100) and the second reaction chamber (200) are located side by side in two spaces (180, 280), but are separated by a metal plate (510) corresponding to at least the reaction chambers (100, 200), and the metal plate (510) is configured to isolate the reaction chambers (100, 200) from each other at least magnetically.

16. The reactor (1000) according to claim 15, wherein: The metal plate (510) is made of a material with high magnetic permeability.

17. The reactor (1000) according to claim 15 or 16, wherein: The metal plate (510) is made of aluminum or Permalloy, preferably aluminum.

18. The reactor (1000) according to claim 15, 16 or 17, wherein: The metal plate (510) is solid and preferably has a thickness of 5-10 mm.

19. The reactor (1000) according to any one of claims 15 to 18, the metal plate (510) and the one or more metal panels (520, 530) being positioned to mechanically and / or fluidically isolate the two spaces (180, 280) from each other.

20. The reactor (1000) according to claim 19, wherein: The metal plate (510) is located in the center, with at least the first panel (520) located below and / or at least the second panel (530) located above.

21. The reactor (1000) according to any one of claims 15 to 20, further comprising at least one maintenance space (610, 620, 630).

22. The reactor (1000) according to claim 21, wherein The first maintenance space (610) is located in a space (180) corresponding to a first side of the reactor and adjacent to the first reaction chamber (100), and / or wherein the second maintenance space (620) is located in a space (280) corresponding to the second side of the reactor and adjacent to the second reaction chamber (200), and / or The third maintenance space (630) is located in front of or behind the reactor and is adjacent to the two spaces (180, 280) of the reaction chambers (100, 200).