Bearing device and semiconductor process chamber

Abstract

The invention provides a bearing device and a semiconductor process chamber. The bearing device comprises a base, a plurality of bearing pieces and a plurality of rotating structures, the base is used for being arranged in a semiconductor process chamber and can rotate relative to the semiconductor process chamber; the bearing parts are used for bearing wafers, and the plurality of bearing parts are respectively and rotatably arranged on the base around own axes; the multiple rotating structures and the multiple bearing pieces are arranged in a one-to-one correspondence and matched mode and are arranged in cooperation with the base, and the rotating structures are used for rotating relative to the base under the rotating action of the base so as to drive the corresponding bearing pieces to rotate around the axes of the corresponding bearing pieces relative to the base. According to the bearing device and the semiconductor process chamber provided by the invention, the uniformity of a temperature field and an airflow field on the surface of the same wafer can be improved, so that the uniformity of an epitaxial layer in the wafer can be improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a carrier device and a semiconductor process chamber. Background Art

[0002] The semiconductor epitaxial growth process chamber includes a chamber body and a carrying device, the carrying device includes a carrying tray and a rotating mechanism, the carrying tray is arranged in the chamber body and is used to carry multiple wafers at intervals, and the rotating mechanism is connected to the carrying tray and is used to drive the carrying tray to rotate.

[0003] In the prior art, in the semiconductor epitaxial growth process, the temperature field and airflow field in the chamber body are unevenly distributed, resulting in different temperatures and airflows on different wafer surfaces, resulting in poor uniformity of epitaxial layers between wafers (e.g., uniformity of film thickness, doping concentration, etc.).

[0004] That is, the uniformity of the epitaxial layers grown on the surfaces of different wafers is poor. Therefore, a rotating mechanism is set up to connect with the carrying tray. The rotating mechanism drives the carrying tray to rotate, so that the multiple wafers carried on the carrying tray can rotate along with the rotation of the carrying tray, thereby improving the uniformity of the epitaxial layers between wafers.

[0005] However, in the prior art, different positions on the same wafer surface are still subject to different temperatures and airflows, resulting in uneven temperature and airflow fields on the same wafer surface, causing the uniformity of the epitaxial layer within the wafer to be poor, that is, the uniformity of the epitaxial layer grown on the same wafer surface is poor. Summary of the invention

[0006] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a carrier device and a semiconductor process chamber, which can improve the uniformity of the temperature field and airflow field on the surface of the same wafer, thereby improving the uniformity of the epitaxial layer in the wafer.

[0007] In order to achieve the purpose of the present invention, a bearing device is provided, comprising a base, a plurality of bearing members and a plurality of rotating structures;

[0008] The base is used to be arranged in a semiconductor process chamber and can rotate relative to the semiconductor process chamber;

[0009] The carrier is used to carry the wafer, and a plurality of the carriers are rotatably arranged on the base around their own axes;

[0010] The multiple rotating structures and the multiple supporting members correspond to each other and are arranged in coordination with each other, and the multiple rotating structures are respectively arranged in coordination with the base. The rotating structures are used to rotate relative to the base under the rotation action of the base, so as to drive the corresponding supporting members to rotate relative to the base around their own axes.

[0011] Optionally, the rotating structure includes a rotating ball and a supporting ball;

[0012] The base is provided with a plurality of limiting grooves, and the plurality of limiting grooves are arranged on the base at intervals for accommodating the plurality of bearing members in a one-to-one correspondence;

[0013] The bottom of the limiting groove is provided with a first limiting hole, and the first limiting hole penetrates the bottom of the corresponding limiting groove;

[0014] The bearing member is provided with a rotation groove, which is arranged on the bottom surface of the bearing member and is annular along the circumference of the bearing member;

[0015] The rotating ball is partially accommodated in the first limiting hole, partially accommodated in the rotating groove, and partially protrudes relative to the bottom surface of the base, and is used to contact the bearing member and the fixed object located below the rotating ball respectively;

[0016] The supporting ball is rotatably disposed between the bearing member and the base, and is at least partially accommodated in the rotating groove.

[0017] Optionally, the fixed object is the bottom wall of the semiconductor process chamber, and the portion of the rotating ball protruding relative to the bottom surface of the base can contact the inner wall of the bottom wall of the semiconductor process chamber.

[0018] Optionally, there is a gap between the bottom surface of the bearing member and the bottom of the corresponding limiting groove.

[0019] Optionally, the rotating balls and the supporting balls are located on both sides of the center of the bearing member.

[0020] Optionally, the rotating ball is close to the edge of the base relative to the supporting ball.

[0021] Optionally, the supporting device also includes a rotating mechanism, which is connected to the base and is used to drive the base to rotate. The rotating mechanism includes a rotating shaft and a rotating disk, and the rotating disk is arranged at the bottom of the base. The rotating shaft is connected to the rotating disk and is used to drive the rotating disk to rotate, thereby driving the base to rotate along with the rotation of the rotating disk.

[0022] Optionally, the rotating disk extends in its radial direction to the bottom of the plurality of limiting grooves, and the rotating disk is provided with a plurality of second limiting holes, the plurality of second limiting holes are arranged one-to-one corresponding to the plurality of first limiting holes, and the second limiting holes pass through the rotating disk, and part of the rotating ball is accommodated in the second limiting hole, and part of it protrudes relative to the bottom surface of the rotating disk.

[0023] Optionally, the aperture of the first limiting hole is the same as the aperture of the second limiting hole, and the radial dimension of the rotating ball is smaller than the aperture of the first limiting hole and the aperture of the second limiting hole.

[0024] Optionally, the material of the base, the material of the rotating structure and the material of the plurality of supporting members are the same.

[0025] In order to achieve the purpose of the present invention, a semiconductor process chamber is also provided, including a chamber body and a carrying device provided to achieve the purpose of the present invention, the carrying device is arranged in cooperation with the chamber body and can rotate relative to the chamber body, and is used to carry a wafer in the chamber body and drive the wafer to rotate.

[0026] The present invention has the following beneficial effects:

[0027] The supporting device provided by the present invention has a rotating structure that can rotate relative to the base under the rotation of the base, so as to drive the corresponding supporting member to rotate relative to the base around its own axis, thereby driving the wafer carried by the corresponding supporting member to rotate relative to the base around its own axis. In this way, in the semiconductor epitaxial growth process, the wafer can not only rotate relative to the semiconductor process chamber with the rotation of the base, but also rotate relative to the base with the rotation of the supporting member. Compared with the prior art, in the semiconductor epitaxial growth process, different positions of the same wafer surface are no longer fixed relative to the base, but can be rotated to different positions relative to the base, thereby improving the uniformity of the temperature field and airflow field on the same wafer surface, and further improving the uniformity of the epitaxial layer within the wafer (that is, the uniformity of the epitaxial layer grown on the same wafer surface).

[0028] The semiconductor process chamber provided by the present invention can carry the wafer in the chamber body with the help of the carrying device provided by the present invention, and drive the wafer to rotate, so as to improve the uniformity of the temperature field and airflow field on the surface of the same wafer, thereby improving the uniformity of the epitaxial layer in the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 A schematic diagram of the main cross-sectional structure of a carrier device and a semiconductor process chamber provided by an embodiment of the present invention;

[0030] Figure 2 A schematic diagram of the three-dimensional structure of a bearing member, a rotating ball and a chamber body provided in an embodiment of the present invention;

[0031] Figure 3 A schematic diagram of a front cross-sectional structure of a carrying device provided in an embodiment of the present invention;

[0032] Figure 4A schematic diagram of the exploded structure of a carrying device provided in an embodiment of the present invention;

[0033] Figure 5 A schematic diagram of a top view of a base provided in an embodiment of the present invention;

[0034] Figure 6 A schematic diagram of the three-dimensional structure of a carrier and a wafer provided in an embodiment of the present invention;

[0035] Figure 7 A schematic diagram of the bottom structure of a bearing member provided in an embodiment of the present invention;

[0036] Description of reference numerals:

[0037] 1-base; 11-limiting groove; 12-first limiting hole; 2-rotating structure; 21-rotating ball;

[0038] 22-supporting ball; 3-carrying member; 31-rotating groove; 4-rotating mechanism; 41-rotating shaft; 42-rotating disk; 421-second limiting hole; 5-chamber body; 100-wafer. DETAILED DESCRIPTION

[0039] In order to enable those skilled in the art to better understand the technical solution of the present invention, the generation of technical problems in the prior art is first introduced.

[0040] The inventors of the present invention have discovered that in the existing semiconductor epitaxial growth process, among the multiple wafers carried at intervals on a carrier tray, different positions on the surface of the same wafer are subjected to different temperatures and airflows, and the temperature and airflows on the two opposite edges of the same wafer surface are quite different, resulting in poor uniformity of the temperature field and airflow field on the surface of the same wafer. In the prior art, the multiple wafers carried at intervals on a carrier tray can only rotate relative to the chamber body as the carrier tray rotates in the semiconductor epitaxial growth process, but cannot rotate relative to the carrier tray. As a result, among the multiple wafers carried at intervals on the carrier tray, different positions on the surface of the same wafer are fixed relative to the carrier tray in the semiconductor epitaxial growth process, resulting in poor uniformity of the epitaxial layer in the wafer (e.g., uniformity of film thickness, doping concentration, etc.) after the semiconductor epitaxial growth process is completed, that is, the uniformity of the epitaxial layer grown on the same wafer surface is poor.

[0041] The carrier device and the semiconductor process chamber provided by the present invention are described in detail below with reference to the accompanying drawings.

[0042] like Figure 1 , Figure 3 , Figure 4 and Figure 6As shown, an embodiment of the present invention provides a carrying device, including a base 1, a plurality of carrying members 3 and a plurality of rotating structures 2, wherein the base 1 is used to be arranged in a semiconductor process chamber and can rotate relative to the semiconductor process chamber; the carrying member 3 is used to carry a wafer 100, and the plurality of carrying members 3 are respectively rotatably arranged on the base 1 around their own axes; the plurality of rotating structures 2 and the plurality of carrying members 3 correspond to each other one by one and are arranged in coordination, and the plurality of rotating structures 2 are respectively arranged in coordination with the base 1, and the rotating structure 2 is used to rotate relative to the base 1 under the rotation action of the base 1, so as to drive the corresponding carrying member 3 to rotate relative to the base 1 around its own axis.

[0043] The supporting device provided by the embodiment of the present invention has a rotating structure 2 that can rotate relative to the base 1 under the rotation of the base 1, so as to drive the corresponding supporting member 3 to rotate relative to the base 1 around its own axis, thereby driving the wafer 100 carried by the corresponding supporting member 3 to rotate relative to the base 1 around its own axis. In this way, in the semiconductor epitaxial growth process, the wafer 100 can not only rotate relative to the semiconductor process chamber with the rotation of the base 1, but also rotate relative to the base 1 with the rotation of the supporting member 3. Compared with the prior art, in the semiconductor epitaxial growth process, different positions on the surface of the same wafer 100 are no longer fixed relative to the base 1, but can be rotated to different positions relative to the base 1, thereby improving the uniformity of the temperature field and airflow field on the surface of the same wafer 100, and further improving the uniformity of the epitaxial layer within the wafer (that is, the uniformity of the epitaxial layer grown on the surface of the same wafer 100).

[0044] In practical applications, for example, in a semiconductor epitaxial growth process, a plurality of carriers 3 are arranged at intervals on a base 1, a plurality of wafers 100 are carried on the plurality of carriers 3 in a one-to-one manner, and the base 1 rotates relative to the semiconductor process chamber in the semiconductor process chamber to drive the plurality of wafers 100 on the base 1 to rotate relative to the semiconductor process chamber along with the rotation of the base 1, and since the plurality of rotating structures 2 are respectively arranged in cooperation with the base 1, the rotation of the base 1 can generate forces on the plurality of rotating structures 2 respectively, so that the plurality of rotating structures 2 can rotate respectively relative to the base 1, and the plurality of rotating structures 2 correspond to and cooperate with the plurality of carriers 3 one by one, therefore, the rotation of the plurality of rotating structures 2 relative to the base 1 can generate forces on the plurality of carriers 3 in a one-to-one manner, so that the plurality of carriers 3 can rotate around their own axes relative to the base 1. In this way, during the rotation of the base 1 relative to the semiconductor process chamber, the multiple rotating structures 2 can drive the multiple carriers 3 to rotate relative to the base 1 around their own axes one by one, so that the multiple wafers 100 on the multiple carriers 3 can rotate relative to the base 1 around their own axes as the carriers 3 rotate, thereby realizing that the multiple wafers 100 on the base 1 can rotate relative to the semiconductor process chamber as the base 1 rotates, and can also rotate relative to the base 1 as the carriers 3 rotate. In addition, such a design makes it possible for the rotating structure 2 and the carrier 3 to not have self-driving capabilities, but to rely on the rotational force of the base 1 to drive the rotating structure 2 to rotate, and then rely on the rotational force of the rotating structure 2 to drive the carrier 3 to rotate relative to the base 1.

[0045] Optionally, three carriers 3 may be arranged at intervals on the base 1, and the three carriers 3 may carry three wafers 100 in a one-to-one correspondence, and the number of rotating structures 2 may be three, and the three rotating structures 2 and the three carriers 3 correspond to each other and are arranged in coordination, and the three rotating structures 2 are respectively arranged in coordination with the base 1. However, the number of rotating structures 2 and the number of carriers 3 arranged at intervals on the base 1 are not limited to three, and may be two, four or more, for example.

[0046] like Figure 1 , Figure 3-Figure 5 and Figure 7As shown, in one embodiment of the present invention, the rotating structure 2 may include a rotating ball 21 and a supporting ball 22, and the base 1 is provided with a plurality of limiting grooves 11, and the plurality of limiting grooves 11 are arranged at intervals on the base 1, for accommodating a plurality of supporting members 3 in a one-to-one correspondence; a first limiting hole 12 is arranged at the bottom of the limiting groove 11, and the first limiting hole 12 passes through the bottom of the corresponding limiting groove 11; the supporting member 3 is provided with a rotating groove 31, and the rotating groove 31 is arranged on the bottom surface of the supporting member 3 and is annular along the circumference of the supporting member 3, part of the rotating ball 21 is accommodated in the first limiting hole 12, part of it is accommodated in the rotating groove 31, and part of it protrudes relative to the bottom surface of the base 1, for contacting the supporting member 3 and a fixed object located below the rotating ball 21 respectively; the supporting ball 22 is rotatably arranged between the supporting member 3 and the base 1, and is at least partially accommodated in the rotating groove 31.

[0047] That is to say, the rotating ball 21 can partially protrude relative to the top end of the first limiting hole 12, partially be accommodated in the first limiting hole 12, and partially protrude relative to the bottom end of the first limiting hole 12 (that is, partially protrude relative to the bottom surface of the base 1), and the bottom surface of the portion of the rotating ball 21 protruding relative to the bottom surface of the base 1 can contact the fixed object located below the rotating ball 21, and the portion of the rotating ball 21 protruding relative to the top end of the first limiting hole 12 can be accommodated in the rotating groove 31, and the top surface of the portion of the rotating ball 21 accommodated in the rotating groove 31 can contact the bottom surface of the supporting member 3.

[0048] In this way, in actual application, when the base 1 rotates relative to the semiconductor process chamber, the rotation of the base 1 can act on the rotating ball 21 through the portion of the rotating ball 21 accommodated in the first limiting hole 12, so that the rotating ball 21 can rotate relative to the semiconductor process chamber as the base 1 rotates relative to the semiconductor process chamber, so that the rotating ball 21 can have relative friction with the fixed object located below the rotating ball 21, so that the rotating ball 21 can roll and rotate on the fixed object located below the rotating ball 21, and the rolling rotation of the rotating ball 21 can act on the carrier 3 through the portion of the rotating ball 21 accommodated in the rotating groove 31, so that the carrier 3 and the rotating ball 21 can have relative friction, so that the carrier 3 can rotate, and by making the rotating groove 31 annular along the circumference of the carrier 3, the carrier 3 can rotate with the axis of the carrier 3 as the axis, so that when the base 1 rotates relative to the semiconductor process chamber, the corresponding carrier 3 can be driven to rotate around its own axis relative to the base 1 with the help of the rotating structure 2.

[0049] By accommodating a plurality of bearing members 3 in a plurality of limiting grooves 11 in a one-to-one correspondence, the plurality of bearing members 3 can be limited in position by means of the plurality of limiting grooves 11 in a one-to-one correspondence. By providing a rotatable support ball 22 between the bearing member 3 and the base 1, the bearing member 3 can be supported by means of the support ball 22. The support ball 22 can roll and rotate on the base 1 during the rotation of the bearing member 3 around its own axis relative to the base 1, thereby reducing the sliding friction between the bearing member 3 and the base 1, thereby reducing the friction between the bearing member 3 and the base 1, and further enabling the bearing member 3 to rotate more smoothly relative to the base 1. By accommodating at least part of the support ball 22 in the rotation groove 31, the support ball 22 can be limited in position by means of the rotation groove 31. By making part of the rotating ball 21 protrude relative to the bottom surface of the base 1, the rotating ball 21 can also be used to support the supporting component 3, reducing the contact between the bottom surface of the supporting component 3 and the bottom of the corresponding limiting groove 11, thereby reducing the sliding friction between the supporting component 3 and the base 1, and allowing the supporting component 3 to rotate more smoothly relative to the base 1.

[0050] It should be noted that the fixed object in the present application refers to an object that is arranged in the semiconductor process chamber and whose position is fixed relative to the chamber wall of the semiconductor process chamber. In this way, when the base 1 rotates, the rotating ball 21 that rotates with the base 1 rubs against the fixed object, thereby driving the rotating ball 21 to roll around its own circle.

[0051] like Figure 1-Figure 4 As shown, optionally, the fixed object may be the bottom wall of the semiconductor process chamber, and the portion of the rotating ball 21 protruding relative to the bottom surface of the base 1 may contact the inner wall of the bottom wall of the semiconductor process chamber.

[0052] Such a design allows the rotating ball 21 to generate relative friction with the inner wall of the bottom wall of the semiconductor process chamber as the base 1 rotates relative to the semiconductor process chamber, thereby allowing the rotating ball 21 to roll and rotate on the bottom wall of the semiconductor process chamber.

[0053] like Figure 1 and Figure 2 As shown, in actual application, when the base 1 is rotated in a clockwise direction (such as Figure 2 When the rotating ball 21 rotates along with the base 1 in the clockwise direction relative to the semiconductor process chamber (as shown by the arrow C in the middle), the rotating ball 21 can rotate along with the base 1 in the clockwise direction relative to the semiconductor process chamber and rotate along the clockwise direction relative to the semiconductor process chamber (as shown by the arrow C in the middle Figure 2 The rotating ball 21 can rotate in a clockwise direction (as shown by the arrow D in the middle) on the bottom wall of the semiconductor process chamber. Figure 1 and Figure 2As the rotating ball 21 rolls and rotates, the bearing member 3 can rotate relative to the base 1 in a clockwise direction (as shown by the arrow B in the middle), under the action of the friction between the bearing member 3 and the rotating ball 21. Figure 1 and Figure 2 The carrier 3 rotates around its own axis (as shown by the middle arrow A), thereby forming a satellite-type rotation mode, that is, the carrier 3 rotates in the same direction as the base 1 when the base 1 rotates, which can further improve the uniformity of the temperature field and airflow field on the surface of the same wafer 100, and further improve the uniformity of the epitaxial layer in the wafer.

[0054] However, the fixed object is not limited to the bottom wall of the semiconductor process chamber. In actual applications, the fixed object can be an object that is fixed in position. For example, the fixed object can also be an annular protrusion arranged on the inner wall of the bottom wall of the semiconductor process chamber. By making the protruding portion of the rotating ball 21 relative to the bottom surface of the base 1 contact with the annular protrusion, the rotating ball 21 can generate relative friction with the annular protrusion during the process of rotating relative to the semiconductor process chamber as the base 1 rotates relative to the semiconductor process chamber, so that it can roll and rotate on the annular protrusion.

[0055] In practical applications, the error between the radial dimension of the portion of the rotating ball 21 accommodated in the rotating groove 31 and the radial dimension of the rotating groove 31 may be less than 0.2 mm, so that the rotating ball 21 and the rotating groove 31 can have a better fitting effect.

[0056] like Figure 1 and Figure 3 As shown, in one embodiment of the present invention, there may be a gap between the bottom surface of the bearing member 3 and the bottom of the corresponding limiting groove 11 .

[0057] Such a design can avoid the bottom surface of the bearing member 3 from contacting the bottom of the corresponding limiting groove 11, thereby reducing the sliding friction between the bearing member 3 and the base 1, and further enabling the bearing member 3 to rotate more smoothly relative to the base 1. In practical applications, a portion of the support ball 22 can be accommodated in the rotation groove 31, and the other portion protrudes relative to the notch of the rotation groove 31, that is, protrudes relative to the bottom surface of the bearing member 3, so that a portion of the support ball 22 is located in the limiting groove 11, that is, between the bottom surface of the bearing member 3 and the bottom of the corresponding limiting groove 11, and a portion of the rotating ball 21 is located between the bottom surface of the bearing member 3 and the bottom of the limiting groove 11, so that the bearing member 3 can be supported by the rotating ball 21 and the support ball 22, so that there can be a gap between the bottom surface of the bearing member 3 and the bottom of the corresponding limiting groove 11.

[0058] like Figure 1 , Figure 3 and Figure 4As shown, in one embodiment of the present invention, the rotating balls 21 and the supporting balls 22 may be located on both sides of the center of the supporting member 3 .

[0059] By locating the rotating balls 21 and the supporting balls 22 on both sides of the center of the supporting member 3 , the horizontal stability of the supporting member 3 during the rotation relative to the base 1 can be improved.

[0060] like Figure 1 , Figure 3 and Figure 4 As shown, in one embodiment of the present invention, the rotating balls 21 can be close to the edge of the base 1 relative to the supporting balls 22 .

[0061] By making the rotating ball 21 closer to the edge of the base 1 relative to the supporting ball 22, that is, making the supporting ball 22 closer to the center of the base 1 relative to the rotating ball 21, the torque of the rotating ball 21 can be increased, so that the rotating ball 21 can drive the supporting component 3 to rotate more smoothly, and then the supporting component 3 can rotate more smoothly relative to the base 1.

[0062] Optionally, the top surface of the rotating ball 21 and the top surface of the supporting ball 22 may be at the same level. In practical applications, the error of the top surface of the rotating ball 21 and the top surface of the supporting ball 22 at the same level may be less than 0.5 mm.

[0063] like Figure 1 , Figure 3 and Figure 4 As shown, in one embodiment of the present invention, the supporting device may further include a rotating mechanism 4, which is connected to the base 1 and is used to drive the base 1 to rotate. The rotating mechanism 4 includes a rotating shaft 41 and a rotating disk 42, and the rotating disk 42 is arranged at the bottom of the base 1. The rotating shaft 41 is connected to the rotating disk 42 and is used to drive the rotating disk 42 to rotate, thereby driving the base 1 to rotate along with the rotation of the rotating disk 42.

[0064] That is to say, in actual application, the rotating shaft 41 can drive the rotating disk 42 to rotate, and the rotation of the rotating disk 42 can drive the base 1 set on the rotating disk 42 to rotate, so that the base 1 can rotate with the rotation of the rotating disk 42, thereby realizing the rotation of the base 1 relative to the semiconductor process chamber in the semiconductor process chamber.

[0065] like Figure 1 As shown, optionally, the rotating shaft 41 can pass through the semiconductor process chamber from outside the semiconductor process chamber to inside the semiconductor process chamber and be connected to the rotating disk 42.

[0066] like Figure 1 , Figure 3-Figure 5As shown, in one embodiment of the present invention, the rotating disk 42 can extend in its radial direction to the bottom of multiple limiting grooves 11, and the rotating disk 42 can be provided with multiple second limiting holes 421, and the multiple second limiting holes 421 are arranged one by one corresponding to the multiple first limiting holes 12, and the second limiting holes 421 pass through the rotating disk 42, and part of the rotating ball 21 is accommodated in the second limiting hole 421, and part of it protrudes relative to the bottom surface of the rotating disk 42.

[0067] In actual application, the bottom surface of the portion of the rotating ball 21 protruding relative to the bottom surface of the rotating disk 42 can contact the inner wall of the bottom wall of the semiconductor process chamber. When the rotating disk 42 drives the base 1 to rotate relative to the semiconductor process chamber, the rotation of the rotating disk 42 and the base 1 can act on the rotating ball 21 through the portion of the rotating ball 21 accommodated in the second limiting hole 421 and the portion accommodated in the first limiting hole 12, so that the rotating ball 21 can rotate relative to the semiconductor process chamber as the rotating disk 42 and the base 1 rotate relative to the semiconductor process chamber, and can roll and rotate on the bottom wall of the semiconductor process chamber. The rotating ball 21 can be limited by the first limiting hole 12 and the second limiting hole 421.

[0068] In one embodiment of the present invention, the aperture of the first limiting hole 12 may be the same as the aperture of the second limiting hole 421 , and the radial dimension of the rotating ball 21 may be smaller than the aperture of the first limiting hole 12 and the aperture of the second limiting hole 421 .

[0069] Such a design can reduce the static friction between the rotating ball 21 and the first limiting hole 12 and the second limiting hole 421 when the rotating ball 21 starts to roll and rotate.

[0070] Optionally, the radial dimension of the rotating ball 21 may be 1 mm-2 mm smaller than the aperture of the first limiting hole 12 and the aperture of the second limiting hole 421 .

[0071] In an embodiment of the present invention, the material of the base 1 , the material of the rotating structure 2 , and the material of the plurality of supporting components 3 may be the same.

[0072] Such a design can reduce the wear between the base 1 , the rotating structure 2 and the multiple bearing components 3 , and increase the service life of the base 1 , the rotating structure 2 and the multiple bearing components 3 .

[0073] Optionally, the material of the base 1 , the material of the rotating structure 2 , and the material of the plurality of carriers 3 may be graphite.

[0074] Optionally, the carrier device provided in the embodiment of the present invention can be applied to a semiconductor epitaxial growth process chamber. In other words, the carrier device provided in the embodiment of the present invention can be applied to a semiconductor epitaxial growth process.

[0075] Optionally, the carrier provided by the embodiment of the present invention can be applied to a silicon carbide (SiC) epitaxial growth process chamber. In other words, the carrier provided by the embodiment of the present invention can be applied to a silicon carbide (SiC) epitaxial growth process.

[0076] Optionally, the size of the wafer 100 that the carrier 3 can carry includes six inches. However, the size of the wafer 100 that the carrier 3 can carry is not limited to this.

[0077] like Figure 1 and Figure 2 As shown, an embodiment of the present invention further provides a semiconductor process chamber, including a chamber body 5 and a carrying device as provided in an embodiment of the present invention, the carrying device is arranged in cooperation with the chamber body 5 and can rotate relative to the chamber body 5, and is used to carry a wafer 100 in the chamber body 5 and drive the wafer 100 to rotate.

[0078] The semiconductor process chamber provided by the embodiment of the present invention carries the wafer 100 in the chamber body 5 with the help of the carrying device provided by the embodiment of the present invention, and drives the wafer 100 to rotate, which can improve the uniformity of the temperature field and airflow field on the surface of the same wafer 100, thereby improving the uniformity of the epitaxial layer in the wafer.

[0079] In summary, the carrier device and the semiconductor process chamber provided by the embodiments of the present invention can improve the uniformity of the temperature field and the airflow field on the surface of the same wafer 100, thereby improving the uniformity of the epitaxial layer within the wafer.

[0080] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A carrying device, characterized in that: It includes a base, a plurality of bearing members and a plurality of rotating structures; The base is used to be arranged in a semiconductor process chamber and can rotate relative to the semiconductor process chamber; The carrier is used to carry the wafer, and a plurality of the carriers are rotatably arranged on the base around their own axes; The multiple rotating structures and the multiple supporting members correspond to each other and are arranged in coordination with each other, and the multiple rotating structures are respectively arranged in coordination with the base. The rotating structures are used to rotate relative to the base under the rotation action of the base, so as to drive the corresponding supporting members to rotate relative to the base around their own axes.

2. The carrying device according to claim 1, characterized in that: The rotating structure includes a rotating ball and a supporting ball; The base is provided with a plurality of limiting grooves, and the plurality of limiting grooves are arranged on the base at intervals for accommodating the plurality of bearing members in a one-to-one correspondence; The bottom of the limiting groove is provided with a first limiting hole, and the first limiting hole penetrates the bottom of the corresponding limiting groove; The bearing member is provided with a rotation groove, which is arranged on the bottom surface of the bearing member and is annular along the circumference of the bearing member; The rotating ball is partially accommodated in the first limiting hole, partially accommodated in the rotating groove, and partially protrudes relative to the bottom surface of the base, and is used to contact the bearing member and the fixed object located below the rotating ball respectively; The supporting ball is rotatably disposed between the bearing member and the base, and is at least partially accommodated in the rotating groove.

3. The carrying device according to claim 2, characterized in that: The fixed object is a bottom wall of the semiconductor process chamber.

4. The carrying device according to claim 2, characterized in that: There is a gap between the bottom surface of the bearing member and the bottom of the corresponding limiting groove.

5. The carrying device according to claim 2, characterized in that: The rotating balls and the supporting balls are located on both sides of the center of the bearing member.

6. The carrying device according to claim 5, characterized in that: The rotating ball is close to the edge of the base relative to the supporting ball.

7. The carrying device according to claim 2, characterized in that: The supporting device also includes a rotating mechanism, which is connected to the base and is used to drive the base to rotate. The rotating mechanism includes a rotating shaft and a rotating disk. The rotating disk is arranged at the bottom of the base. The rotating shaft is connected to the rotating disk and is used to drive the rotating disk to rotate, thereby driving the base to rotate along with the rotation of the rotating disk.

8. The carrying device according to claim 7, characterized in that: The rotating disk extends radially to the bottom of the plurality of limiting grooves, and the rotating disk is provided with a plurality of second limiting holes, the plurality of second limiting holes are arranged one-to-one corresponding to the plurality of first limiting holes, and the second limiting holes penetrate the rotating disk, and a portion of the rotating ball is accommodated in the second limiting hole, and a portion thereof protrudes relative to the bottom surface of the rotating disk.

9. The carrying device according to claim 8, characterized in that: The aperture of the first limiting hole is the same as the aperture of the second limiting hole, and the radial dimension of the rotating ball is smaller than the aperture of the first limiting hole and the aperture of the second limiting hole.

10. The carrying device according to claim 1, characterized in that: The material of the base, the material of the rotating structure and the material of the plurality of supporting members are the same.

11. A semiconductor process chamber, characterized in that: It comprises a chamber body and a carrying device as described in any one of claims 1-10, wherein the carrying device is arranged in cooperation with the chamber body and can rotate relative to the chamber body, and is used for carrying a wafer in the chamber body and driving the wafer to rotate.

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