Semiconductor device
By designing a semiconductor device including a substrate, a dielectric layer, and a metal layer, using reverse bias voltage and induced current or voltage to measure temperature, the problem of signal instability and low accuracy of traditional temperature sensing elements in low temperature environments is solved, and higher temperature measurement accuracy and anti-interference ability are achieved.
Patent Information
- Application Number
- CN202510092266.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2024-11-29
- Filing Date
- 2025-01-21
- Publication Date
- 2025-05-02
AI Technical Summary
The temperature sensing element in traditional liquid crystal panels has unstable signal in low temperature environments, low accuracy, and is susceptible to external interference, affecting the readability and accuracy of temperature sensing.
A semiconductor device is designed, including a substrate, a dielectric layer, a first metal layer and a second metal layer, by forming a reverse bias voltage at the junction, temperature measurement is performed using an induced current or an induced voltage, to increase signal strength and reduce coupling interference.
It greatly improves the accuracy of temperature measurement, reduces signal coupling interference, can operate stably in low temperature environments, and supports temperature measurement in both temperature-induced current or temperature-sensitive voltage modes.
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Figure CN119915398A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to a semiconductor device, in particular to a temperature sensing element. Background Art
[0002] Liquid crystal panels can be used in many places, such as car displays. However, in low temperature environments, the response time of liquid crystals will increase, especially between -20 degrees Celsius and 10 degrees Celsius, where there are drastic changes, causing the display to be unable to display information in real time. Therefore, a temperature sensor must be added to the liquid crystal panel to know the temperature of the liquid crystal panel and decide whether the liquid crystal panel needs to be heated.
[0003] The temperature sensing element in the traditional LCD panel is usually detected by thin film transistor elements. Under sub-saturation operation conditions, the signal is unstable and the accuracy is low. In addition, under off-state operation, in a low temperature environment, the signal of the temperature sensing element is small and easily affected by external interference, which affects the readability and accuracy of the temperature sensing element. Summary of the invention
[0004] The invention provides a semiconductor device to improve the accuracy of temperature measurement.
[0005] The present invention provides a semiconductor device, comprising: a substrate, comprising a first doping region having a first doping type, and a second doping region having a second doping type different from the first doping type; a dielectric layer, located on the first doping region; a first metal layer, located on the dielectric layer; and a second metal layer, located on the second doping region.
[0006] In some embodiments of the present invention, the doping type of the first doping region is undoped, and the doping type of the second doping region is N-type or P-type.
[0007] In some embodiments of the present invention, the doping type of the first doping region is N-type or P-type, and the doping type of the second doping region is undoped.
[0008] In some embodiments of the present invention, the second doping region can be divided into a first part and a second part, wherein the first part and the second part have the same doping type, wherein the doping concentration of the first part is less than the doping concentration of the second part, and wherein the second part is connected to the second metal layer.
[0009] In some embodiments of the present invention, the doping type of the second doping region is P type or N type.
[0010] In some embodiments of the present invention, a distance between a junction between the first doping region and the second doping region and a side surface of the dielectric layer is less than or equal to an effective carrier diffusion length of a dopant in the second doping region.
[0011] In some embodiments of the present invention, a distance between a junction between the first doping region and the second doping region and a side surface of the second metal layer is less than or equal to an effective carrier diffusion length of a dopant in the second doping region.
[0012] In some embodiments of the present invention, the dielectric layer covers the second doped region.
[0013] In some embodiments of the present invention, the second metal layer passes through the dielectric layer and is connected to the second doped region.
[0014] In some embodiments of the present invention, the semiconductor device further includes: an insulating layer located between the first metal layer and the second metal layer for electrically isolating the first metal layer from the second metal layer.
[0015] Based on the above, the semiconductor device provided by the present invention can significantly enhance the signal to avoid coupling interference and improve accuracy compared to the thin film transistor temperature sensor, and can perform temperature measurement in two modes: temperature sensing current or temperature sensing voltage according to the needs. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] Figure 1 is a schematic diagram of a semiconductor device according to an embodiment of the present invention.
[0017] Figure 2 is a schematic diagram of a temperature sensing mode according to an embodiment of the present invention.
[0018] Figure 3 is a schematic diagram of another temperature sensing mode according to an embodiment of the present invention.
[0019] Figure 4 is a schematic diagram of a semiconductor device according to another embodiment of the present invention.
[0020] Figure 5 The invention discloses a relationship between a current signal and temperature of a semiconductor device and a thin film transistor temperature sensing device according to an embodiment of the invention.
[0021] Description of reference numerals:
[0022] 100, 100A: Semiconductor devices
[0023] 110: Base
[0024] 112: First doping region
[0025] 114: Second doping region
[0026] 114A: Part 1
[0027] 114B: Part 2
[0028] 114S, 120S, 140S: Side surface
[0029] 120, 120A: Dielectric layer
[0030] 122: Meet
[0031] 130: First metal layer
[0032] 140, 140A: Second metal layer
[0033] 150: Insulation layer
[0034] D1, D2: distance
[0035] I2: Current
[0036] V1: first voltage
[0037] V1', V1": effective first voltage
[0038] V2: Second voltage DETAILED DESCRIPTION
[0039] Figure 1 is a schematic diagram of a semiconductor device according to an embodiment of the present invention. Figure 1 The semiconductor device 100 includes a substrate 110 , a dielectric layer 120 , a first metal layer 130 , and a second metal layer 140 .
[0040] The substrate 110 may be, for example, crystalline silicon, silicon-on-insulator, or other suitable elemental semiconductors.
[0041] The substrate 110 may be doped with a P-type dopant to become a P-type substrate, or may be doped with an N-type dopant to become an N-type substrate. Figure 1 As shown, the substrate 110 includes a first doping region 112 having a first doping type, and a second doping region 114 having a second doping type different from the first doping type.
[0042] In some embodiments, the first doping region 112 is not doped with a dopant and has no doping type. In some embodiments, the second doping region 114 is doped with a P-type dopant and has a P-type doping type. In some embodiments, the second doping region 114 is doped with an N-type dopant and has an N-type doping type.
[0043] Since the first doping region 112 and the second doping region 114 have different doping types, a junction is formed at the junction of the first doping region 112 and the second doping region 114. Depending on the doping types of the first doping region 112 and the second doping region 114, the junction may be an I / N junction or an I / P junction.
[0044] In some other embodiments, the first doping region 112 is doped with a P-type dopant and has a doping type of P. In some embodiments, the first doping region 112 is doped with an N-type dopant and has a doping type of N. In some embodiments, the second doping region 114 is not doped with a dopant and has no doping type.
[0045] The dielectric layer 120 is located on the first doped region 112. In some embodiments, the material of the dielectric layer 120 may be silicon oxide, silicon nitride and / or silicon oxynitride, or other suitable materials, but the present disclosure is not limited thereto.
[0046] The first metal layer 130 is located on the dielectric layer 120. In some embodiments, the material of the first metal layer 130 can be copper, titanium, tungsten, aluminum, or other suitable materials, but the present disclosure is not limited thereto.
[0047] The second metal layer 140 is located on the second doped region 114. In some embodiments, the material of the second metal layer 140 can be copper, titanium, tungsten, aluminum, or other suitable materials, but the present disclosure is not limited thereto. In some embodiments, the first metal layer 130 and the second metal layer 140 can be made of the same material or different materials.
[0048] Please refer to Figure 1 The semiconductor device 100 further includes an insulating layer 150 located between the first metal layer 130 and the second metal layer 140 to electrically isolate the first metal layer 130 from the second metal layer 140. In some embodiments, the insulating layer 150 may be made of silicon oxide, silicon nitride and / or silicon oxynitride, or other suitable materials, but the present disclosure is not limited thereto.
[0049] Figure 2 is a schematic diagram of a temperature sensing mode according to an embodiment of the present invention. In this embodiment, by applying a first voltage V1 to the first metal layer 130 and a second voltage V2 to the second metal layer 140, and by induction charges causing the junction formed by the first doping region 112 and the second doping region 114 in the substrate 110 to generate a reverse bias, the temperature can be sensed by measuring a second current I2 that changes with temperature in the second metal layer 140. The working principle is described below.
[0050] Please refer to Figure 2 .exist Figure 2In it, the first doping region 112 is not doped with a dopant and has no doping type. The second doping region 114 is doped with an N-type dopant and has an N-type doping type.
[0051] In order to maintain the reverse bias operation of the junction formed by the first doping region 112 and the second doping region 114, a first voltage V1 is applied to the first metal layer 130, and a second voltage V2 is applied to the second metal layer 140, where V1 < V2.
[0052] When V1 < V2, the first metal layer 130 repels electrons, causing positive charges to accumulate on the surface of the dielectric layer 120 close to the first metal layer 130, and negative charges to accumulate on the surface of the first doping region 112 of the substrate 110 close to the dielectric layer 120. Therefore, an effective first voltage V1' is generated at the junction 122 between the dielectric layer and the first doping region 112.
[0053] Therefore, the second voltage V2 and the effective first voltage V1' act on the junction formed by the first doping region 112 and the second doping region 114, and an induced current I2 flowing out from the second metal layer 140 can be measured at the second metal layer 140, passing through the dielectric layer 120, the first doping region 112, and the second doping region 114 from the first metal layer 130. This induced current I2 varies with temperature.
[0054] In this embodiment, for electrons to flow from the first metal layer 130 through the dielectric layer 120, the first doping region 112, and the second doping region 114 into the second metal layer 140, the semiconductor device 100 must meet the following conditions.
[0055] As Figure 1 shown, the distance D1 between the junction between the first doping region 112 and the second doping region 114, that is, the side surface 114S of the second doping region 114, and the side surface 120S of the dielectric layer 120 is less than or equal to the effective carrier diffusion length of the first doping region 112, that is, electrons can smoothly pass through the first doping region 112 and enter the second doping region 114.
[0056] In addition, as Figure 1 shown, the distance D2 between the junction between the first doping region 112 and the second doping region 114, that is, the side surface 114S of the second doping region 114, and the side surface 140S of the second metal layer 140 is less than or equal to the effective carrier diffusion length of the dopant in the second doping region 114, that is, electrons can smoothly pass through the second doping region 114 and enter the second metal layer 140.
[0057] In some embodiments, if the second doping region 114 is doped with P-type dopants and the doping type is P-type, then in order to apply a reverse bias to the junction 114S formed by the first doping region 112 and the second doping region 114, a first voltage V1 is applied to the first metal layer 130 and a second voltage V2 is applied to the second metal layer 140, wherein V1>V2.
[0058] Therefore, a reverse bias is applied to the junction 114S formed by the first doped region 112 and the second doped region 114 through the first metal layer 130 and the second metal layer 140 , and the induced current I2 varying with temperature can be measured in the second metal layer 140 for temperature measurement.
[0059] Since the measurement method here is to fix the first voltage V1 and the second voltage V2 and measure the current I2 that changes with temperature, it is also called a constant voltage mode.
[0060] Figure 3 1 is a schematic diagram of another temperature sensing mode according to an embodiment of the present invention. In this embodiment, by applying a second voltage V2 and a fixed second current I2 to the second metal layer 140, the temperature can be sensed by measuring the first voltage V1 of the first metal layer 130 that changes with temperature. The temperature sensing voltage modes of the semiconductor device 100 are described below. The working principle is described below.
[0061] Please refer to Figure 3 .exist Figure 3 In the embodiment, the first doping region 112 is not doped with any dopant and has no doping type. The second doping region 114 is doped with an N-type dopant and has an N-type doping type.
[0062] A current I2 is injected into the second metal layer 140 , and a second voltage V2 is provided to the second metal layer 140 to drive a junction formed by the first doped region 112 and the second doped region 114 .
[0063] When the second metal layer 140 is provided with a second voltage V2 to drive the junction formed by the first doped region 112 and the second doped region 114 , an effective first voltage V1″ may be induced at the junction between the dielectric layer 120 and the first doped region 112 .
[0064] Since the dielectric layer 120 maintains electrical neutrality, positive charges are accumulated on the surface of the dielectric layer 120 near the first metal layer 130, and negative charges are accumulated on the surface of the first doped region 112 near the substrate 110. Therefore, the first metal layer 130 generates a first voltage V1 that changes with temperature.
[0065] In some embodiments, if the second doping region 114 is doped with P-type dopants, the doping type is P-type, a first voltage V1 and a current I2 are applied to the first metal layer 130 , and a second voltage V2 varying with temperature is measured at the second metal layer 140 .
[0066] Since the measurement method here is to fix the second voltage V2 and the current I2 and measure the first voltage V1 that changes with temperature, it is also called a constant current mode.
[0067] Figure 4 is a schematic diagram of a semiconductor device according to another embodiment of the present invention. Figure 4 , the semiconductor device 100A and Figure 1 The semiconductor device 100 shown is similar, wherein like reference numerals correspond to like elements and thus are not described again herein.
[0068] The difference between the semiconductor device 100A and the semiconductor device 100 is that the dielectric layer 120A not only covers the first doped region 112, but also extends to cover the second doped region 114. Therefore, the manufacturing process of the semiconductor device 100A can be simplified.
[0069] In addition, if Figure 4 As shown, the second metal layer 140A passes through the dielectric layer 120A and connects to the second doped region 114. Figure 1 In contrast, the side surface of the second metal layer 140A is in contact with both the dielectric layer 120A and the insulating layer 150 .
[0070] In addition, if Figure 4 As shown, the second doped region 114 can be divided into a first portion 114A and a second portion 114B. Figure 4 As shown, the second portion 114B is connected to the second metal layer 140. The first portion 114A and the second portion 114B have the same doping type, wherein the doping concentration of the first portion 114A is less than the doping concentration of the second portion 114B. By controlling the doping concentrations of the first portion 114A and the second portion 114B, the performance of the semiconductor device 100 with temperature changes can be controlled, for example, Figure 2 In the embodiment shown, the second current I2 which varies with temperature is changed, or Figure 3 In the illustrated embodiment, the first voltage V1 is varied as a function of temperature.
[0071] Figure 5 The relationship between the current signal and temperature of a semiconductor device according to an embodiment of the present invention and a traditional temperature sensing device is shown.
[0072] Figure 5 So Figure 2The relationship between the current I2 and the temperature measured by the semiconductor device in constant voltage mode is shown. On the other hand, the relationship between the current I1 and the temperature measured by the thin film transistor temperature sensor is compared.
[0073] like Figure 5 As shown, under the condition of fixed end point pressure difference V12 = V1-V2, Figure 2 The current I2 measured by the semiconductor device operating in the constant voltage mode is greater than the current I1 measured by the thin film transistor temperature sensor. In the temperature range of -40 degrees Celsius to 60 degrees Celsius, the ratio of I2 / I1 is approximately between 41-67, which shows that the current I2 measured by the semiconductor device is much greater than the current I1 measured by the thin film transistor temperature sensor, which can greatly improve the measurement accuracy.
[0074] In addition, under temperature-sensing voltage operation, the sensing voltage end can be connected to the feedback loop switch TFT. The potential rise and fall of the sensing voltage end can directly control the heating element without transmitting the sensing signal. The microcontroller feedback signal controls the heating element through the core wiring, which can simplify the internal wiring design of the core.
[0075] In summary, the semiconductor device provided by the present invention can significantly enhance the signal to avoid coupling interference and improve accuracy compared to the traditional thin film transistor temperature sensor, and can perform temperature measurement in two modes: temperature sensing current or temperature sensing voltage according to the needs.
Claims
1. A semiconductor device comprising: a substrate including a first doping region having a first doping type, and a second doping region having a second doping type different from the first doping type; a dielectric layer, located on the first doped region; A first metal layer, located on the dielectric layer; as well as The second metal layer is located on the second doped region. 2 . The semiconductor device according to claim 1 , wherein the doping type of the first doping region is undoped, and the doping type of the second doping region is N-type or P-type. 3 . The semiconductor device according to claim 1 , wherein a doping type of the first doping region is N-type or P-type, and a doping type of the second doping region is undoped.
4. The semiconductor device as claimed in claim 1, wherein the second doped region can be divided into a first portion and a second portion, wherein the first portion and the second portion have the same doping type, wherein the doping concentration of the first portion is less than the doping concentration of the second portion, and wherein the second portion is connected to the second metal layer. The semiconductor device as claimed in claim 4 , wherein the doping type of the second doping region is P type or N type. 6 . The semiconductor device as claimed in claim 1 , wherein a distance between a junction between the first doped region and the second doped region and a side surface of the dielectric layer is less than or equal to an effective carrier diffusion length of a dopant in the second doped region. 7 . The semiconductor device as claimed in claim 1 , wherein a distance between a junction between the first doping region and the second doping region and a side surface of the second metal layer is less than or equal to an effective carrier diffusion length of a dopant in the second doping region. The semiconductor device as claimed in claim 1 , wherein the dielectric layer overlies the second doped region. 9 . The semiconductor device as claimed in claim 1 , wherein the second metal layer passes through the dielectric layer and contacts the second doped region.
10. The semiconductor device according to claim 1, further comprising: The insulating layer is located between the first metal layer and the second metal layer, and is used for electrically isolating the first metal layer from the second metal layer.