CMOS temperature sensor based on bipolar transistor

Abstract

The invention discloses a CMOS temperature sensor based on a bipolar transistor, and the temperature sensor comprises a temperature sensing front-end circuit which is used for collecting a temperature signal, converting the collected temperature signal into a voltage signal, and transmitting the voltage signal to a scaling type ADC rear-end circuit, and the voltage signal comprises a first voltage signal and a second voltage signal; the scaling type ADC rear-end circuit is used for receiving the voltage signal, converting the voltage signal into a first parameter mu, and determining an actual temperature value corresponding to the temperature signal by using a preset temperature conversion formula and the first parameter mu; and the digital dequantization filter is used for filtering and outputting the actual temperature value. According to the CMOS temperature sensor based on the bipolar transistor, the DWA is utilized to reduce the mismatch of the DAC, so that the precision of the temperature sensor is improved. And meanwhile, the amplifier based on the phase inverter is used for the integrator, so that the power consumption of the circuit is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of sensors, and in particular to a CMOS temperature sensor based on a bipolar transistor. Background Art

[0002] There are many temperature sensors on the market, including thermocouples, thermistors, and MOS-based temperature sensors. However, these sensors have their own shortcomings in terms of response speed, linearity, power consumption, and measurement accuracy. For example, thermocouples have slow response, thermistors have poor linearity, and MOS sensor accuracy is easily affected by process deviations. Therefore, it is of great significance to develop a temperature sensor with low power consumption, high accuracy, and wide temperature range measurement. Summary of the invention

[0003] In order to solve the technical problems existing in the background technology, the present invention proposes a CMOS temperature sensor based on a bipolar transistor.

[0004] The present invention provides a CMOS temperature sensor based on a bipolar transistor, comprising:

[0005] A temperature sensing front-end circuit, used for collecting temperature signals, converting the collected temperature signals into voltage signals, and transmitting the voltage signals to a zoom ADC back-end circuit, wherein the voltage signals include a first voltage signal and a second voltage signal;

[0006] The scaling ADC back-end circuit is used to receive the voltage signal, convert the voltage signal into a first parameter μ, and then determine the actual temperature value corresponding to the temperature signal using a preset temperature conversion formula and the first parameter μ;

[0007] A digital dequantization filter is used to filter the actual temperature value and output it.

[0008] Preferably, the preset temperature conversion formula is specifically:

[0009] D = A·μ + B;

[0010] Where D is the ideal temperature value; μ is the first parameter;

[0011] The actual temperature value corresponding to the temperature signal is determined by using a preset temperature conversion formula and the first parameter μ. Specifically, the optimal solution of A and B is linearly fitted using multiple sets of ideal temperature values ​​D and the value of the first parameter μ. Then, the actual temperature value is obtained by using the preset temperature conversion formula combined with the value read out by the scaling ADC back-end circuit.

[0012] Preferably, the scaling ADC back-end circuit specifically includes:

[0013] A first ADC module, used for performing coarse quantization processing to determine a voltage range of an input voltage signal;

[0014] The second ADC module is used to perform fine quantization within the voltage range to determine the actual temperature value corresponding to the temperature signal.

[0015] Preferably, the second ADC module specifically includes: a combinational logic device, a DWA, an adder, a DAC, an integrator, and a quantizer;

[0016] The combinational logic is used to convert multiple voltages within the voltage range into multiple temperature codes and transmit them to the DWA, and is responsible for coordinating the acquisition of temperature sensing front-end signals, the working timing of the first ADC module and the second ADC module;

[0017] The DWA is used to transmit multiple temperature codes to the DAC, and make the multiple temperature codes have the same probability of being selected by the DAC;

[0018] The DAC is used to select a temperature code from multiple temperature codes and generate a DAC output signal; the adder is used to obtain a difference signal by subtracting the voltage signal from the DAC output signal; the integrator is used to receive the difference signal, integrate the difference signal, and obtain an integration result; the quantizer is used to generate a quantized output result based on the integration result.

[0019] Preferably, the temperature sensing front-end circuit specifically includes: a transistor Q1, a transistor Q2, a transistor Q3, a transistor Q4, a resistor R1, a transistor M31, a transistor M32, a transistor M33, a transistor M34 and an amplifier; the base of the transistor Q1, the base of the transistor Q2, the base of the transistor Q3 and the base of the transistor Q4 are all grounded, the collector of the transistor Q1, the collector of the transistor Q2, the collector of the transistor Q3 and the collector of the transistor Q4 are all grounded, the emitter of the transistor Q1 is electrically connected to one end of the resistor R1, the other end of the resistor R1 is electrically connected to the drain of the transistor M31, the source of the transistor M31, the collector of the transistor M32 and the collector of the transistor Q3 are all grounded. 2, the source of the transistor M33 and the source of the transistor M34 share the power supply VCC, the gate of the transistor M31 is electrically connected to the gate of the transistor M32, the gate of the transistor M33 is electrically connected to the gate of the transistor M34, the drain of the transistor M32 is electrically connected to the emitter of the transistor Q2, the drain of the transistor M33 is electrically connected to the emitter of the transistor Q3, the drain of the transistor M34 is electrically connected to the emitter of the transistor Q4, the other end of the resistor R1 is electrically connected to the positive input terminal of the amplifier, the emitter of the transistor Q2 is electrically connected to the negative input terminal of the amplifier, and the gate of the transistor M31 is electrically connected to the output terminal of the amplifier.

[0020] Preferably, the current ratio of the transistor M31 to the transistor M32 is 1:M; the current ratio of the transistor M33 to the transistor M34 is 1:M; and the current ratio of the transistor M32 to the transistor M33 is 1:1.

[0021] Preferably, the integrator is specifically an inverter-based amplifier.

[0022] Preferably, the inverter-based amplifier includes: transistors M18, M19, M20, and M21 whose sources share a power supply VDD, transistors M9, M10, M11, M12, and M13 whose sources share a ground, the drain of transistor M18 being electrically connected to the source of transistor M1, the drain of transistor M18 being electrically connected to the source of transistor M2, the gate of transistor M18 being electrically connected to the gate of transistor M19, the drain of transistor M1 being electrically connected to the gate of transistor M5. The source of transistor M2 is electrically connected, the drain of transistor M2 is electrically connected to the source of transistor M6, the gate of transistor M5 is electrically connected to the gate of transistor M5, the drain of transistor M5 is electrically connected to the drain of transistor M7, the drain of transistor M6 is electrically connected to the drain of transistor M8, the drain of transistor M3 is electrically connected to the source of transistor M7, the drain of transistor M4 is electrically connected to the source of transistor M8, the drain of transistor M9 is electrically connected to the source of transistor M3, and the drain of transistor M10 is electrically connected to the source of transistor M4. The source of transistor M3 is electrically connected to the source of transistor M4, the gate of transistor M1 is electrically connected to the gate of transistor M3, the gate of transistor M2 is electrically connected to the gate of transistor M4, the drain of transistor M19 is electrically connected to the source of transistor M17, the drain of transistor M17 is electrically connected to the drain of transistor M11, the drain of transistor M20 is electrically connected to the drain of transistor M14, the source of transistor M14 is electrically connected to the drain of transistor M12, the gate of transistor M14 is electrically connected to the gate of transistor M4, and the drain of transistor M19 is electrically connected to the source of transistor M17. The gate of transistor M8 is electrically connected, the gate of transistor M14 is electrically connected to the drain of transistor M20, the gate of transistor M21 is electrically connected to the drain of transistor M16, the drain of transistor M21 is electrically connected to the source of transistor M16, the gate of transistor M15 is electrically connected to the gate of transistor M15, the source of transistor M15 is electrically connected to the drain of transistor M13, the drain of transistor M15 is electrically connected to the gate of transistor M13, and the gate of transistor M12 is electrically connected to the gate of transistor M13.

[0023] In the present invention, the proposed bipolar transistor-based CMOS temperature sensor uses the DWA to reduce the mismatch of the DAC, thereby improving the accuracy of the temperature sensor. At the same time, an inverter-based amplifier is used as an integrator, reducing the power consumption of the circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 The figure is a schematic diagram of the overall structure of a CMOS temperature sensor based on a bipolar transistor of the present invention;

[0025] Figure 2 The schematic diagram of the temperature sensing front-end circuit of the CMOS temperature sensor based on bipolar transistors of the present invention;

[0026] Figure 3 The schematic diagram of the circuit of the scaling ADC back-end circuit of the CMOS temperature sensor based on bipolar transistors of the present invention;

[0027] Figure 4 The schematic diagram of the CMOS temperature sensor integrator circuit based on bipolar transistors of the present invention;

[0028] Figure 5 It is a schematic structural diagram of a CMOS temperature sensor DWA based on a bipolar transistor based on BJT of the present invention;

[0029] Figure 6 The schematic diagram of the DEM circuit of the CMOS temperature sensor based on bipolar transistors of the present invention;

[0030] Figure 7 The schematic diagram of the chopper circuit of the CMOS temperature sensor based on the bipolar transistor of the present invention is shown in FIG. DETAILED DESCRIPTION

[0031] Reference Figure 1-7 The present invention proposes a CMOS temperature sensor based on a bipolar transistor, comprising:

[0032] The temperature sensing front-end circuit is used to collect temperature signals, convert the collected temperature signals into voltage signals, and transmit the voltage signals to the scaling ADC back-end circuit. The voltage signals include a first voltage signal and a second voltage signal.

[0033] In this embodiment, the temperature sensing front-end circuit specifically includes: a transistor Q1, a transistor Q2, a transistor Q3, a transistor Q4, a resistor R1, a transistor M31, a transistor M32, a transistor M33, a transistor M34 and an amplifier; the base of the transistor Q1, the base of the transistor Q2, the base of the transistor Q3, and the base of the transistor Q4 are all grounded, the collector of the transistor Q1, the collector of the transistor Q2, the collector of the transistor Q3, and the collector of the transistor Q4 are all grounded, the emitter of the transistor Q1 is electrically connected to one end of the resistor R1, the other end of the resistor R1 is electrically connected to the drain of the transistor M31, the source of the transistor M31, the transistor M The source of transistor M32, the source of transistor M33 and the source of transistor M34 share the power supply VCC, the gate of transistor M31 is electrically connected to the gate of transistor M32, the gate of transistor M33 is electrically connected to the gate of transistor M34, the drain of transistor M32 is electrically connected to the emitter of transistor Q2, the drain of transistor M33 is electrically connected to the emitter of transistor Q3, the drain of transistor M34 is electrically connected to the emitter of transistor Q4, the other end of resistor R1 is electrically connected to the positive input terminal of the amplifier, the emitter of transistor Q2 is electrically connected to the negative input terminal of the amplifier, and the gate of transistor M31 is electrically connected to the output terminal of the amplifier.

[0034] In this embodiment, the current ratio of the transistor M31 to the transistor M32 is 1:M; the current ratio of the transistor M33 to the transistor M34 is 1:M; and the current ratio of the transistor M32 to the transistor M33 is 1:1.

[0035] In this embodiment, the temperature sensing front-end circuit uses the relationship between the base-emitter voltage (VBE) of the BJT and the temperature to measure the temperature by generating a differential voltage ΔVBE. The specific principle and implementation means are as follows:

[0036] According to the characteristics of BJT, the base-emitter voltage V BE It can be expressed as:

[0037]

[0038] Where k is the Boltzmann constant, T is the absolute temperature, q is the unit electron charge, and I C is the collector current, I S is the saturation current of the BJT and varies exponentially with temperature.

[0039] The base-emitter voltage difference ΔV is obtained by passing currents of I0 and mI0 into two BJTs (area ratio 1:m) respectively. BE :

[0040]

[0041] This formula shows a positive linear relationship with temperature T. By generating ΔVBE and using its linear relationship, the temperature sensing front end converts the temperature signal into a voltage signal. The voltage signal is further converted into a digital signal using ADC to complete the temperature measurement. The specific implementation method is as follows: two BJTs are connected in parallel with an area ratio of 1:m, and a current mirror is used to provide currents of the ratio I0 and mI0 to the two BJTs, and then the base-emitter voltage difference ΔV between the two is extracted through a differential amplifier. BE , the voltage difference is sent to the ADC and converted into the parameter μ, and the temperature conversion formula D = A·μ + B is used to linearly fit the optimal solution of A and B using multiple sets of D (ideal temperature value) and μ value, and then the actual temperature value is obtained by combining the formula with the μ value read by the ADC. Among them, D is the ideal temperature value; μ is the first parameter.

[0042] In this embodiment, the preset temperature conversion formula and the first parameter μ are used to determine the actual temperature value corresponding to the temperature signal. Specifically, multiple sets of ideal temperature values ​​D and the value of the first parameter μ are used to linearly fit the optimal solutions of A and B, and then the preset temperature conversion formula is combined with the value read out by the scaling ADC back-end circuit to obtain the actual temperature value.

[0043] The scaling ADC back-end circuit is used to receive a voltage signal, convert the voltage signal into a first parameter μ, and then determine the actual temperature value corresponding to the temperature signal using a preset temperature conversion formula and the first parameter μ.

[0044] In this embodiment, the zoomable ADC back-end circuit specifically includes:

[0045] A first ADC module, used for performing coarse quantization processing to determine a voltage range of an input voltage signal;

[0046] The second ADC module is used to perform fine quantization within the voltage range to determine the actual temperature value corresponding to the temperature signal.

[0047] In this embodiment, the second ADC module specifically includes: a combination logic, a DWA, an adder, a DAC, an integrator, and a quantizer; the combination logic is used to convert multiple voltages within the voltage range into multiple temperature codes and transmit them to the DWA, and is responsible for coordinating the acquisition of the temperature sensing front-end signal, the working timing of the first ADC module and the second ADC module;

[0048] DWA is used to transmit multiple temperature codes to DAC and make the probability of multiple temperature codes being selected by DAC the same; DAC is used to select one temperature code from multiple temperature codes and generate a DAC output signal; the adder is used to subtract the voltage signal from the DAC output signal to obtain a difference signal; the integrator is used to receive the difference signal, integrate the difference signal, and obtain an integration result; the quantizer is used to generate a quantized output result based on the integration result.

[0049] In this embodiment, the zoom ADC back-end circuit ZOOM ADC is a combination of the first ADC module SAR ADC and the second ADC module ΔΣADC, aiming to combine the advantages of both to achieve high resolution and low power consumption. Its working principle is as follows: First, use SAR ADC for coarse quantization to quickly determine the range of the input signal. Then use ΔΣADC for fine quantization to improve the resolution; the SAR ADC part quickly determines the quantization value at a lower resolution (such as 4-6 bits) to reduce the workload of ΔΣADC, and ΔΣADC achieves high-precision quantization at a lower input signal amplitude, reducing power consumption and linearity requirements. The specific features of ZOOM ADC are as follows: Segmented design: combining SAR and ΔΣ, taking into account both fast response and high resolution requirements. The ΔΣ part only needs to process smaller amplitude signals to reduce complexity and power consumption. Low power consumption: using low-power amplifiers and high-efficiency feedback design, combined with digital correction technology, to reduce hardware complexity; high precision: applying DWA technology and chopper amplifiers to significantly reduce the impact of mismatch errors and offset voltages. The connection method of ZOOM ADC and the temperature sensing front-end circuit is as follows: The V generated by the temperature sensing front end BE and ΔV BE is the input signal of ZOOM ADC; ΔV BE The data is input to SAR ADC and ΔΣADC through the switched capacitor integrator. The preliminary quantization result of SAR ADC is used as input and passed to ΔΣADC for refinement processing. The control logic is responsible for coordinating the acquisition of temperature sensing front-end signals and the working timing of SAR ADC and ΔΣADC.

[0050] PVT compensation technology (DWA technology, DEM technology, chopping technology) and single-point calibration technology are used to eliminate process deviation and nonlinear error. The specific implementation methods are as follows:

[0051] Data Weighted Average (DWA): In multi-bit DAC design, DEM technology is used to dynamically switch the order of capacitor array usage so that the probability of each capacitor selection is the same. This can transfer the DAC mismatch error to the high frequency band and then eliminate the error through the digital filter;

[0052] Dynamic Element Matching (DEM): The temperature sensing core circuit has six identical current mirrors, which are divided into two groups. The first group has only one current mirror, and the second group has five current mirrors in parallel. One current mirror is selected from the six current mirrors and sent to the first group in turn. One cycle is completed every six clock cycles. In this way, even if there is an error in the current mirror, the average current ratio can reach a very accurate 1:5, thereby reducing the mismatch of the current mirror.

[0053] Chopping technology: Chopping circuits such as Figure 7As shown in the figure, in order to reduce the impact of the mismatch between transistors Q1 and Q2, the chopping technology is used for the transistors, and two currents of different sizes are passed through each transistor in turn. Therefore, even if there is a mismatch between the transistors, the mismatch can be greatly suppressed on average.

[0054] In this embodiment, the integrator is specifically an amplifier based on an inverter.

[0055] In this embodiment, an inverter-based op amp structure is used in the integrator and subthreshold bias technology is adopted to reduce power consumption to 6.8μA. The core circuit is designed using CMOS 0.18μm process, integrating temperature sensing elements, amplifiers, ADC and digital calibration circuits to reduce the demand for peripheral devices. At the same time, in the chip layout, a compact layout method is used to reduce the length of the connection line, further saving area. Using DWA and digital calibration technology, the ADC uses two-level quantization (coarse quantization and fine quantization) to make full use of the dynamic range of each quantization level, so that the linearity of the sensor is better. The amplifier and temperature sensing core circuit in the optimized design can adapt to wide temperature changes and allow VBE and ΔVBE to cover the temperature range of -40°C to 125°C, ensuring that the sensor meets the accuracy requirements within a wide temperature range.

[0056] Specifically, the inverter-based amplifier includes: transistors M18, M19, M20, and M21 whose sources share a power supply VDD, transistors M9, M10, M11, M12, and M13 whose sources share a ground, the drain of transistor M18 being electrically connected to the source of transistor M1, the drain of transistor M18 being electrically connected to the source of transistor M2, the gate of transistor M18 being electrically connected to the gate of transistor M19, the drain of transistor M1 being electrically connected to the source of transistor M5, and the gate of transistor M1 being electrically connected to the gate of transistor M5. The drain of transistor M2 is electrically connected to the source of transistor M6, the gate of transistor M5 is electrically connected to the gate of transistor M5, the drain of transistor M5 is electrically connected to the drain of transistor M7, the drain of transistor M6 is electrically connected to the drain of transistor M8, the drain of transistor M3 is electrically connected to the source of transistor M7, the drain of transistor M4 is electrically connected to the source of transistor M8, the drain of transistor M9 is electrically connected to the source of transistor M3, the drain of transistor M10 is electrically connected to the source of transistor M4, and the drain of transistor M11 is electrically connected to the source of transistor M12. The source of transistor M3 is electrically connected to the source of transistor M4, the gate of transistor M1 is electrically connected to the gate of transistor M3, the gate of transistor M2 is electrically connected to the gate of transistor M4, the drain of transistor M19 is electrically connected to the source of transistor M17, the drain of transistor M17 is electrically connected to the drain of transistor M11, the drain of transistor M20 is electrically connected to the drain of transistor M14, the source of transistor M14 is electrically connected to the drain of transistor M12, the gate of transistor M14 is electrically connected to the gate of transistor M4, the drain of transistor M19 is electrically connected to the source of transistor M17, the drain of transistor M17 is electrically connected to the drain of transistor M11, the drain of transistor M20 is electrically connected to the drain of transistor M14, the source of transistor M14 is electrically connected to the drain of transistor M12, the gate of transistor M14 is electrically connected to the gate of transistor M19, and the drain of transistor M19 is electrically connected to the drain of transistor M17. The gate of transistor M8 is electrically connected, the gate of transistor M14 is electrically connected to the drain of transistor M20, the gate of transistor M21 is electrically connected to the drain of transistor M16, the drain of transistor M21 is electrically connected to the source of transistor M16, the gate of transistor M15 is electrically connected to the gate of transistor M15, the source of transistor M15 is electrically connected to the drain of transistor M13, the drain of transistor M15 is electrically connected to the gate of transistor M13, and the gate of transistor M12 is electrically connected to the gate of transistor M13.

[0057] A digital dequantization filter is used to filter the actual temperature value and output it.

[0058] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A CMOS temperature sensor based on a bipolar transistor, characterized in that: include: A temperature sensing front-end circuit, used for collecting temperature signals, converting the collected temperature signals into voltage signals, and transmitting the voltage signals to a zoom ADC back-end circuit, wherein the voltage signals include a first voltage signal and a second voltage signal; The scaling ADC back-end circuit is used to receive the voltage signal, convert the voltage signal into a first parameter μ, and then determine the actual temperature value corresponding to the temperature signal using a preset temperature conversion formula and the first parameter μ; A digital dequantization filter is used to filter the actual temperature value and output it.

2. The CMOS temperature sensor based on bipolar transistor according to claim 1, characterized in that: The preset temperature conversion formula is specifically: D = A·μ + B; Where D is the ideal temperature value; μ is the first parameter; The actual temperature value corresponding to the temperature signal is determined by using a preset temperature conversion formula and the first parameter μ. Specifically, the optimal solution of A and B is linearly fitted using multiple sets of ideal temperature values ​​D and the value of the first parameter μ. Then, the actual temperature value is obtained by using the preset temperature conversion formula combined with the value read out by the scaling ADC back-end circuit.

3. The CMOS temperature sensor based on bipolar transistor according to claim 2, characterized in that: The zoom ADC back-end circuit specifically includes: A first ADC module, used for performing coarse quantization processing to determine a voltage range of an input voltage signal; The second ADC module is used to perform fine quantization within the voltage range to determine the actual temperature value corresponding to the temperature signal.

4. The bipolar transistor-based CMOS temperature sensor according to claim 3, characterized in that: The second ADC module specifically includes: a combination logic, a DWA, an adder, a DAC, an integrator, and a quantizer; The combinational logic is used to convert multiple voltages within the voltage range into multiple temperature codes and transmit them to the DWA, and is responsible for coordinating the acquisition of temperature sensing front-end signals, the working timing of the first ADC module and the second ADC module; The DWA is used to transmit multiple temperature codes to the DAC, and make the multiple temperature codes have the same probability of being selected by the DAC; The DAC is used to select a temperature code from multiple temperature codes and generate a DAC output signal; the adder is used to obtain a difference signal by subtracting the voltage signal from the DAC output signal; the integrator is used to receive the difference signal, integrate the difference signal, and obtain an integration result; the quantizer is used to generate a quantized output result based on the integration result.

5. The bipolar transistor-based CMOS temperature sensor according to claim 1, characterized in that: The temperature sensing front-end circuit specifically includes: a transistor Q1, a transistor Q2, a transistor Q3, a transistor Q4, a resistor R1, a transistor M31, a transistor M32, a transistor M33, a transistor M34 and an amplifier; the base of the transistor Q1, the base of the transistor Q2, the base of the transistor Q3 and the base of the transistor Q4 are all grounded, the collector of the transistor Q1, the collector of the transistor Q2, the collector of the transistor Q3 and the collector of the transistor Q4 are all grounded, the emitter of the transistor Q1 is electrically connected to one end of the resistor R1, the other end of the resistor R1 is electrically connected to the drain of the transistor M31, the source of the transistor M31, the collector of the transistor M32 are electrically connected to the drain of the transistor M31, and the collector of the transistor M33 is electrically connected to the drain of the transistor M34. The source, the source of the transistor M33 and the source of the transistor M34 share the power supply VCC, the gate of the transistor M31 is electrically connected to the gate of the transistor M32, the gate of the transistor M33 is electrically connected to the gate of the transistor M34, the drain of the transistor M32 is electrically connected to the emitter of the transistor Q2, the drain of the transistor M33 is electrically connected to the emitter of the transistor Q3, the drain of the transistor M34 is electrically connected to the emitter of the transistor Q4, the other end of the resistor R1 is electrically connected to the positive input terminal of the amplifier, the emitter of the transistor Q2 is electrically connected to the negative input terminal of the amplifier, and the gate of the transistor M31 is electrically connected to the output terminal of the amplifier.

6. The CMOS temperature sensor based on bipolar transistor according to claim 5, characterized in that: The current ratio of transistor M31 to transistor M32 is 1:M; The current ratio of transistor M33 to transistor M34 is 1:M; The current ratio of transistor M32 to transistor M33 is 1:

1.

7. The bipolar transistor-based CMOS temperature sensor according to claim 4, characterized in that: The integrator is specifically an inverter-based amplifier.

8. The bipolar transistor-based CMOS temperature sensor according to claim 7, characterized in that: The inverter-based amplifier includes: transistors M18, M19, M20, and M21 whose sources share a power supply VDD, transistors M9, M10, M11, M12, and M13 whose sources share a ground, the drain of transistor M18 being electrically connected to the source of transistor M1, the drain of transistor M18 being electrically connected to the source of transistor M2, the gate of transistor M18 being electrically connected to the gate of transistor M19, the drain of transistor M1 being electrically connected to the source of transistor M5. The drain of transistor M2 is electrically connected to the source of transistor M6, the gate of transistor M5 is electrically connected to the gate of transistor M5, the drain of transistor M5 is electrically connected to the drain of transistor M7, the drain of transistor M6 is electrically connected to the drain of transistor M8, the drain of transistor M3 is electrically connected to the source of transistor M7, the drain of transistor M4 is electrically connected to the source of transistor M8, the drain of transistor M9 is electrically connected to the source of transistor M3, and the drain of transistor M10 is electrically connected to the source of transistor M4. The source of transistor M3 is electrically connected to the source of transistor M4, the gate of transistor M1 is electrically connected to the gate of transistor M3, the gate of transistor M2 is electrically connected to the gate of transistor M4, the drain of transistor M19 is electrically connected to the source of transistor M17, the drain of transistor M17 is electrically connected to the drain of transistor M11, the drain of transistor M20 is electrically connected to the drain of transistor M14, the source of transistor M14 is electrically connected to the drain of transistor M12, the gate of transistor M14 is electrically connected to the gate of transistor M4, the drain of transistor M19 is electrically connected to the source of transistor M17, the drain of transistor M17 is electrically connected to the drain of transistor M11, the drain of transistor M20 is electrically connected to the drain of transistor M14, the source of transistor M14 is electrically connected to the drain of transistor M12, the gate of transistor M14 is electrically connected to the gate of transistor M19, and the drain of transistor M19 is electrically connected to the drain of transistor M17. The gate of M8 is electrically connected, the gate of transistor M14 is electrically connected to the drain of transistor M20, the gate of transistor M21 is electrically connected to the drain of transistor M16, the drain of transistor M21 is electrically connected to the source of transistor M16, the gate of transistor M15 is electrically connected to the gate of transistor M15, the source of transistor M15 is electrically connected to the drain of transistor M13, the drain of transistor M15 is electrically connected to the gate of transistor M13, and the gate of transistor M12 is electrically connected to the gate of transistor M13.

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