Photomask, photomask repairing method and substrate processing method comprising photomask repairing method

Abstract

A photomask repair method may include preparing a photomask, forming a discharge hole in the photomask, discharging a contaminant material from the photomask through the discharge hole, and forming a protective layer in the discharge hole to fill the discharge hole after discharging the contaminant material. The photomask may include a main pattern region, a dummy pattern region outside the main pattern region, and a gray region between the main pattern region and the dummy pattern region. Forming the drain hole in the photomask may include forming the drain hole in the gray region. The repaired photomask may be used in a lithographic exposure process to pattern a layer of a semiconductor device.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the priority of Korean Patent Application No. 10-2023-0146703 filed in the Korean Intellectual Property Office on October 30, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present invention relates to a photomask, a photomask repair method and a substrate processing method including the photomask repair method, and in particular, to a photomask that is repaired to discharge contaminated materials accumulated therein, a photomask repair method and a substrate processing method including the photomask repair method. Background Art

[0004] The process of manufacturing a semiconductor device includes various processes. For example, a semiconductor device can be manufactured by an exposure process, an etching process, a deposition process, an electroplating process, etc. An EUV source that generates EUV light can be used in the exposure process. The EUV light can be reflected by the mask and can be irradiated onto the substrate. As a result, a pattern can be formed on the substrate. Summary of the invention

[0005] Embodiments of the inventive concept provide a reticle configured to remove contamination materials and improve the life of the reticle, a reticle repair method, and a substrate processing method including the reticle repair method.

[0006] Embodiments of the inventive concept provide a reticle configured to prevent an exposure process from being affected by a contamination material, a reticle repair method, and a substrate processing method including the reticle repair method.

[0007] Embodiments of the inventive concept provide a reticle configured to remove contamination materials from a region where a dummy hole does not exist, a reticle repair method, and a substrate processing method including the reticle repair method.

[0008] According to an embodiment of the inventive concept, a photomask repair method may include preparing a photomask, forming a drain hole in the photomask, draining contaminated material from the photomask through the drain hole, and forming a protective layer in the drain hole to fill the drain hole after draining the contaminated material. The photomask may include a main pattern area, a dummy pattern area outside the main pattern area, and a gray area between the main pattern area and the dummy pattern area. Forming the drain hole in the photomask may include forming the drain hole in the gray area.

[0009] According to an embodiment of the inventive concept, a substrate processing method may include: placing a first substrate in an exposure system; performing a first exposure process on the first substrate using the exposure system and a mask; detecting a defective area of ​​the mask used for the exposure process; repairing the mask to form a repaired mask; placing a second substrate in the exposure system; and performing a second exposure process on the second substrate using the exposure system and the repaired mask. Repairing the mask may include forming a drain hole in the mask and draining contaminated material from the defective area through the drain hole. Forming the drain hole in the mask may include forming the drain hole in the defective area.

[0010] According to an embodiment of the inventive concept, a substrate processing method may include: detecting a defective region of a mask used for an exposure process; repairing the mask to form a repaired mask; placing a substrate in an exposure system; and performing an exposure process on the substrate using the exposure system and the repaired mask. Repairing the mask may include forming a drain hole in the mask and draining contaminated material from the defective region through the drain hole. Forming the drain hole in the mask may include forming the drain hole in the defective region.

[0011] According to an embodiment of the present invention, the photomask may include a main pattern area in which a mask hole is formed, a dummy pattern area in which a dummy hole spaced apart from the mask hole is formed, and a gray area between the main pattern area and the dummy pattern area. Each of the main pattern area, the dummy pattern area, and the gray area may include a multilayer, a capping layer on the multilayer, an absorption layer on the capping layer, and an anti-reflection layer on the absorption layer. The mask hole may be arranged to penetrate the anti-reflection layer, the absorption layer, and the capping layer. The gray area may also include a protective layer, which is arranged to penetrate the anti-reflection layer, the absorption layer, and the capping layer and extend from the top surface of the anti-reflection layer to the top surface of the multilayer. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 is a cross-sectional view schematically illustrating an exposure system according to an embodiment of the inventive concept.

[0013] Figure 2 is a bottom view illustrating a photomask according to an embodiment of the inventive concept.

[0014] Figure 3 yes Figure 2 Magnified bottom view of the "X" portion of the .

[0015] Figure 4 is a cross-sectional view illustrating a photomask according to an embodiment of the inventive concept.

[0016] Figure 5 is a flowchart illustrating a substrate processing method according to an embodiment of the inventive concept.

[0017] Figure 6is a flowchart illustrating a reticle repair method according to an embodiment of the inventive concept.

[0018] Figures 7 to 16 It shows that according to Figure 5 FIG. 1 is a flow chart of a substrate processing method.

[0019] Figures 17 to 20 It shows that according to Figure 5 FIG. 1 is a flow chart of a substrate processing method.

[0020] Figure 21 to Figure 27 It shows that according to Figure 5 FIG. 1 is a flow chart of a substrate processing method. DETAILED DESCRIPTION

[0021] Example embodiments of the inventive concept will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments are shown. Like reference numerals in the drawings denote like elements, and their description will thus be omitted.

[0022] Figure 1 is a cross-sectional view schematically illustrating an exposure system according to an embodiment of the inventive concept.

[0023] refer to Figure 1 An exposure system EA may be provided. The exposure system EA may be configured to irradiate light onto the substrate ( Figure 1 The exposure system EA is configured to irradiate extreme ultraviolet (EUV) light onto the substrate and form a pattern on the substrate. The substrate may be a silicon (Si) wafer, silicon on insulator (SOI), silicon germanium (SiGe), etc., but the inventive concept is not limited thereto. More specifically, the exposure system EA may be configured to irradiate extreme ultraviolet (EUV) light onto the substrate and form a pattern on the substrate. To this end, the exposure system EA may include an EUV light source ES, a mask stage RS, a substrate stage SD, a first reflection portion RF1, and a second reflection portion RF2.

[0024] The EUV light source ES may be configured to generate EUV light. To this end, the EUV light source ES may include a collimator housing HS, a laser generator LA, and a fluid supply device AA. The collimator housing HS may provide an internal space in which EUV light is generated. The laser generator LA may be connected to the collimator housing HS. The laser generator LA may provide a laser beam to the internal space of the collimator housing HS. The fluid supply device AA may be connected to the collimator housing HS. The fluid supply device AA may supply a fluid into the internal space of the collimator housing HS. If the laser beam is incident on the fluid supplied into the collimator housing HS by the fluid supply device AA, EUV light may be generated.

[0025] The first reflective portion RF1 may be placed between the mask stage RS and the EUV light source ES. The first reflective portion RF1 may be arranged to define a propagation path of EUV light generated by the EUV light source ES. More specifically, the first reflective portion RF1 may be configured to reflect the EUV light generated by the EUV light source ES toward the mask stage RS and guide the EUV light to the mask RT. To this end, the first reflective portion RF1 may include a plurality of optical components RMa. For example, the first reflective portion RF1 may include a first optical component RM1 and a second optical component RM2. Each optical component RMa may include a mirror and / or a lens.

[0026] The second reflective portion RF2 may be disposed between the mask stage RS and the substrate stage SD. The second reflective portion RF2 may be configured to define a propagation path of EUV light reflected by the mask RT. More specifically, the second reflective portion RF2 may be configured to reflect EUV light reflected by the mask RT and guide the EUV light to the substrate on the substrate stage SD. To this end, the second reflective portion RF2 may include a plurality of optical components RMb. For example, the second reflective portion RF2 may include a third optical component RM3 and a fourth optical component RM4. Each optical component RMb may include a mirror and / or a lens.

[0027] The mask stage RS can support the mask RT. The mask stage RS can support the mask RT in various ways. For example, the mask stage RS can fasten the mask RT to the bottom surface of the mask stage RS using electrostatic force. The mask stage RS may include an electrostatic chuck (ESC). However, the inventive concept is not limited to this example, and the mask stage RS may fasten the mask RT using vacuum pressure and / or a clamp. The pattern on the mask RT placed on the mask stage RS can be copied to a substrate on the substrate stage SD.

[0028] The substrate table SD may support a substrate. The substrate may be disposed on the substrate table SD. The substrate table SD may secure the substrate in various ways. For example, the substrate table SD may include an electrostatic chuck (ESC) that secures the substrate using electrostatic force. However, the inventive concept is not limited to this example, and the substrate table SD may secure the substrate using vacuum pressure and / or a clamp.

[0029] Figure 2 is a bottom view showing a photomask according to an embodiment of the inventive concept, and Figure 3 yes Figure 2 Magnified bottom view of the "X" portion of the .

[0030] In the present application, reference numerals D1, D2, and D3 will be used to represent a first direction, a second direction, and a third direction that are not parallel to each other, respectively. Each of the first direction D1 and the second direction D2 may be referred to as a horizontal direction. In addition, the third direction D3 may be referred to as a vertical direction. Each of the first direction D1, the second direction D2, and the third direction D3 may be orthogonal to the other two directions.

[0031] refer to Figure 2 , the mask RT may include a main pattern region R1, a dummy pattern region R3, and a gray region R2. When viewed in a plan view, the main pattern region R1, the dummy pattern region R3, and the gray region R2 may be different regions from each other. Figure 2 In the bottom view of FIG. 1 , the main pattern region R1 may be a region including the center of the mask RT. Figure 2 In the bottom view of , the dummy pattern area R3 may surround the main pattern area R1. The dummy pattern area R3 may be spaced apart from the main pattern area R1. The gray area R2 may be an area between the main pattern area R1 and the dummy pattern area R3. The pattern in the main pattern area R1 is intended to form features on the substrate WF during the exposure process of photolithography, while the pattern in the dummy pattern area is not. No pattern may be formed in the gray area R2. For example, the structure of the mask RT in the gray area R2 may be the same as the structure of the blank mask (e.g., the structure of the mask RT before being patterned).

[0032] refer to Figure 3 , the main pattern region R1 may provide a mask hole Mh. The shape of the mask hole Mh may be replicated on a substrate disposed on the substrate stage SD (see, for example, Figure 1 ). The main pattern area R1 may be an area in which a mask hole Mh is formed. The mask hole Mh may extend a certain length from the bottom surface of the mask RT toward the opposite surface of the mask RT in the third direction D3. When viewed in a plan view, the mask hole Mh may have a circular shape, but the inventive concept is not limited to this example. In an embodiment, a plurality of mask holes Mh may be provided. The mask holes Mh may be spaced apart from each other in a horizontal direction. The distance between two adjacent mask holes Mh may be referred to as a first distance. When viewed in a plan view, the main pattern area R1 having the mask hole Mh may have a quadrilateral or rectangular shape, but the inventive concept is not limited to this example. However, in order to reduce the complexity of the description, one of the mask holes Mh will be exemplarily described.

[0033] The dummy holes Dh may be provided in the dummy pattern region R3. The dummy holes Dh may prevent the contamination material from accumulating in the photomask RT. The hydrogen injected into the photomask RT may accumulate in the multilayer 1 (see FIG. 1 ) of the photomask RT. Figure 4) is discharged to the outside of the mask RT through the dummy hole Dh before being discharged on the mask RT. The dummy hole Dh may be spaced apart from the mask hole Mh. The width of the dummy hole Dh may be less than the width of the mask hole Mh. As described above, the dummy pattern area R3 may be spaced apart from the main pattern area R1. Therefore, the dummy hole Dh in the dummy pattern area R3 does not affect the substrate during the exposure process of the lithography. The dummy hole Dh may extend a specific length from the bottom surface of the mask RT toward the opposite surface of the mask RT in the third direction D3. When viewed in a plan view, the dummy hole Dh may have a circular shape, but the inventive concept is not limited to this example. In an embodiment, a plurality of dummy holes Dh may be provided. The dummy holes Dh may be spaced apart from each other in the horizontal direction. The distance between two adjacent dummy holes Dh may be referred to as a second distance. The second distance may be greater than the first distance. That is, the dummy holes Dh may be arranged more sparsely than the mask holes Mh. When viewed in a plan view, the dummy pattern region R3 provided with the dummy hole Dh may have a rectangular frame shape, but the inventive concept is not limited to this example. For the sake of brevity, the following description will refer to an example in which only one dummy hole Dh is provided.

[0034] The gray region R2 may be located between the main pattern region R1 and the dummy pattern region R3. The mask hole Mh and the dummy hole Dh may not be provided in the gray region R2. The gray region R2 may have a quadrilateral or rectangular frame shape when viewed in a plan view, but the inventive concept is not limited to this example.

[0035] Figure 4 is a cross-sectional view illustrating a photomask according to an embodiment of the inventive concept.

[0036] refer to Figure 4 , each of the main pattern region R1, the dummy pattern region R3, and the gray region R2 may include a multilayer 1, a capping layer 3, an absorption layer 5, and an anti-reflection layer 7. The multilayer 1, the capping layer 3, the absorption layer 5, and the anti-reflection layer 7 may be stacked in sequence. The main pattern region R1, the dummy pattern region R3, and the gray region R2 may distinguish vertically stacked layers (e.g., a multilayer 1, a capping layer 3, an absorption layer 5, and an anti-reflection layer 7) in a plan view.

[0037] The multilayer 1 may include a plurality of component layers. For example, the multilayer 1 may be formed of or include a silicon (Si) layer 11 and a molybdenum (Mo) layer 13. More specifically, the multilayer 1 may be formed of or include a plurality of silicon layers 11 and a plurality of molybdenum layers 13. The silicon layers 11 and the molybdenum layers 13 may be alternately stacked. The top layer of the multilayer 1 may be a silicon layer 11, but the inventive concept is not limited to this example.

[0038] The capping layer 3 may be disposed on the multilayer 1. For example, the capping layer 3 may cover the multilayer 1. The capping layer 3 may be formed of or include ruthenium (Ru), but the inventive concept is not limited to this example.

[0039] The absorption layer 5 may be disposed on the capping layer 3. The absorption layer 5 may absorb at least a portion of light incident into the photomask RT. The absorption layer 5 may be formed of or include tantalum boron nitride (TaBN), but the inventive concept is not limited to this example.

[0040] The anti-reflection layer 7 may be disposed on the absorption layer 5. The anti-reflection layer 7 may prevent at least a portion of light incident into the photomask RT from being reflected. The anti-reflection layer 7 may be formed of or include tantalum boron oxide (TaBO), but the inventive concept is not limited to this example.

[0041] The mask hole Mh provided in the main pattern region R1 may extend from the top surface of the anti-reflection layer 7 to the top surface of the capping layer 3. The mask hole Mh may be provided to penetrate the anti-reflection layer 7 and the absorption layer 5. Therefore, the top surface of the capping layer 3 may be exposed through the mask hole Mh. However, the inventive concept is not limited to this example, and the mask hole Mh may further penetrate the capping layer 3 to extend to the top surface of the multilayer 1. In this case, the top surface of the multilayer 1 may be exposed through the mask hole Mh.

[0042] The dummy hole Dh provided in the dummy pattern region R3 may extend from the top surface of the anti-reflection layer 7 to the top surface of the capping layer 3. The dummy hole Dh may be provided to penetrate the anti-reflection layer 7 and the absorption layer 5. Therefore, the top surface of the capping layer 3 may be exposed through the dummy hole Dh. However, the inventive concept is not limited to this example, and the dummy hole Dh may further penetrate the capping layer 3 and may extend to the top surface of the multilayer 1. In this case, the top surface of the multilayer 1 may be exposed through the dummy hole Dh.

[0043] For ease of description, spatially relative terms such as "below," "under," "down," "above," "up," "top," "bottom," etc. may be used herein to describe the relationship of one element or feature relative to another element or feature as shown in the accompanying drawings. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation shown in the accompanying drawings. For example, if the device in the accompanying drawings is turned over, elements described as "below" or "beneath" other elements or features will be oriented "above" the other elements or features. Thus, the term "upper" can encompass both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein may be interpreted accordingly. Reference Figure 1 , Figure 4The reticle RT is shown turned over to be supported by the reticle stage RS.

[0044] Figure 5 is a flowchart illustrating a substrate processing method according to an embodiment of the inventive concept.

[0045] refer to Figure 5 , a substrate processing method Sa can be provided. The substrate processing method Sa can be using reference Figures 1 to 4 Description Figure 1 A method for processing a substrate using an exposure system EA. The substrate processing method Sa may include: placing a substrate in an exposure system (Sa1), performing an exposure process on the substrate (Sa2), detecting a defective area of ​​a mask (Sa3), and repairing the mask (Sa4).

[0046] Figure 6 is a flowchart illustrating a reticle repair method according to an embodiment of the inventive concept.

[0047] refer to Figure 6 , a mask repair method Sb may be provided. The mask repair method Sb may include repairing the mask ( Figure 5 The photomask repair method Sb may include: preparing a photomask (Sb1), forming a drain hole in the photomask (Sb2), draining contaminated material from the photomask through the drain hole (Sb3), and forming a protective layer in the drain hole (Sb4).

[0048] In the following, reference will be made to Figures 7 to 16 Describe in more detail Figure 5 Substrate processing method.

[0049] Figures 7 to 16 It shows that according to Figure 5 FIG. 1 is a flow chart of a substrate processing method.

[0050] refer to Figure 7 and Figure 5 Placing the substrate in the exposure system (Sa1) may include placing the substrate WF on the substrate table SD. The substrate WF may be secured at a predetermined position on the substrate table SD.

[0051] Performing an exposure process (Sa2) on the substrate may include transferring the pattern of the mask RT onto the substrate WF using the light EL generated by the EUV light source ES. More specifically, the pattern of the mask hole Mh of the mask RT may be copied onto the substrate WF by the light EL. The light EL may be EUV light, but the inventive concept is not limited to this example.

[0052] refer to Figure 8 , Fig. 9 and Figure 5, detecting a defective area (Sa3) of the mask may include detecting whether a defective area exists in the mask RT. For example, it may be detected whether a defective area exists in the gray area R2 of the mask RT. When contamination material DF accumulates in the mask RT, a defective area may be formed. If contamination material DF accumulates in the mask RT, a portion of the bottom surface of the mask RT may protrude. The diameter of the defective area formed by the contamination material DF may be referred to as a first diameter DA1. So far, an example in which contamination material DF accumulates in the gray area R2 has been described, but the inventive concept is not limited to this example.

[0053] refer to Fig.10 and Figure 5 , preparing the mask (Sb1) may include preparing a mask RT in which a contamination material DF is accumulated. In an embodiment, the contamination material DF may contain hydrogen. The contamination material DF may accumulate on the multilayer 1. For example, the contamination material DF may sequentially pass through the anti-reflection layer 7, the absorption layer 5, and the capping layer 3, and may accumulate on the top surface of the silicon layer 11. Therefore, a portion 3x of the capping layer 3 may protrude in an upward direction (i.e., a third direction D3) and may have a convex shape. In addition, a portion 5x of the absorption layer 5 may protrude in an upward direction and may have a convex shape. Furthermore, a portion 7x of the anti-reflection layer 7 may protrude in an upward direction and may have a convex shape.

[0054] refer to Fig.11 and Figure 5 , forming a drain hole (Sb2) in the mask may include forming a drain hole Eh that penetrates the anti-reflection layer 7, the absorption layer 5, and the capping layer 3. For example, the drain hole Eh may be formed to extend from the top surface of the anti-reflection layer 7 to the bottom surface of the capping layer 3. The polluted material DF accumulated on the top surface of the multilayer 1 may be exposed through the drain hole Eh. The drain hole Eh may not penetrate the multilayer 1. More specifically, the drain hole Eh may not penetrate the topmost silicon layer 11 of the multilayer 1. The polluted material DF accumulated on the top surface of the multilayer 1 may be exposed through the drain hole Eh. The diameter of the drain hole Eh may be smaller than the diameter of the defective area. The diameter of the drain hole Eh may be smaller than the diameter of the polluted material DF. The drain hole Eh may be formed in various ways. For example, the drain hole Eh may be formed by an electron beam etching process. The drain hole Eh may be formed by an electron beam emitted from the etching device 2. However, the inventive concept is not limited to this example.

[0055] refer to Fig.12 , Fig.13 and Figure 6, discharging the contaminated material from the photomask through the exhaust hole (Sb3) may include keeping the photomask RT intact during a specific time period. For example, when the contaminated material DF is exposed through the exhaust hole Eh, the photomask RT may be kept intact during a first time period. Therefore, the contaminated material DF may be discharged to the outside of the photomask RT through the exhaust hole Eh. Alternatively, discharging the contaminated material from the photomask through the exhaust hole (Sb3) may include vibrating the photomask RT. More specifically, when the contaminated material DF is exposed through the exhaust hole Eh, the photomask RT may vibrate to accelerate the discharge of the contaminated material DF. Fig.12 As shown by the double-headed arrows in , the mask RT can vibrate from one side to the other side, but the inventive concept is not limited to this example. If the contaminant material DF is completely or partially discharged, an empty space Ih can be formed between the capping layer 3 and the multilayer 1. Unless the context indicates otherwise, it should be understood that the term "discharge" refers to removing material from an element. For example, "discharging contaminant material from the mask" can be understood as "removing all or part of the contaminant material from the mask."

[0056] refer to Fig.14 and Figure 6 , the mask repair method Sb may also include restoring the gray area. For example, the gray area R2 (eg, see Figure 8 ) can be restored by keeping the photomask RT from which the contamination material DF is removed as it is during a specific time period. More specifically, the photomask RT can be kept as it is during the second time period, and in this case, the portion 3x of the capping layer 3, the portion 5x of the absorption layer 5, and / or the portion 7x of the anti-reflection layer 7 can be partially restored. The restoration of the photomask RT can be performed by elastic deformation.

[0057] refer to Fig.15 and Figure 6 , forming the protective layer (Sb4) in the discharge hole may include forming a protective layer 9 in the discharge hole Eh to fill the discharge hole Eh. The protective layer 9 may extend vertically. The protective layer 9 may be formed to at least partially fill Fig.13 The protective layer 9 may be formed of a material different from each of the anti-reflection layer 7, the absorption layer 5, and the capping layer 3, or include a material different from each of the anti-reflection layer 7, the absorption layer 5, and the capping layer 3. For example, the protective layer 9 may be formed of or include chromium (Cr). However, the inventive concept is not limited to this example. The level of the top surface of the protective layer 9 may be substantially equal to or similar to the level of the topmost surface of the anti-reflection layer 7. The protective layer 9 may be formed by, for example, an electron beam deposition repair process. The protective layer may contact the upper surface of the uppermost silicon layer.

[0058] refer to Fig.16 and Figure 6The mask repair method Sb may further include forming an upper protective layer 9x. The upper protective layer 9x may be formed on the protective layer 9. The width of the lower portion of the upper protective layer 9x may be greater than the width of the upper portion of the protective layer 9. More specifically, the width DAx of the upper protective layer 9x may be greater than the contamination material DF accumulated in the defective region (e.g., see Fig.11 ) in width. The upper protective layer 9x may cover the topmost portion of the interface between the protective layer 9 and the anti-reflection layer 7. Therefore, the interface between the protective layer 9 and the anti-reflection layer 7 may not be exposed to the outside.

[0059] In the photomask, the photomask repair method, and the substrate processing method including the photomask repair method according to the embodiments of the present invention, contaminated materials can be quickly removed from the photomask. More specifically, contaminated materials can be removed from the gray area without dummy holes. Therefore, the photomask can be reused to increase the life of the photomask. Figure 6 The repaired mask can be reused to perform Figure 5 Thus, the substrate processing method may include placing a substrate WF on a substrate table SD, and the substrate WF may be fastened to a predetermined position on the substrate table SD, such as Figure 7 and Figure 5 As shown. Performing an exposure process on the substrate may include transferring the pattern of the repaired mask RT onto the substrate WF using the light EL generated by the EUV light source ES. More specifically, the pattern of the mask hole Mh of the mask RT may be copied to the substrate WF by the light EL. The light EL may be EUV light, but the inventive concept is not limited to this example. The exposure system used after the repair process may be an exposure system that is exactly the same as the exposure system of the repaired mask after the repair process or an exposure system that is substantially the same, but the inventive concept is not limited to this example. Therefore, as used herein, the term "exposure system" in which the repaired mask is used may refer to an exposure system that is exactly the same as the exposure system used after the repair process or an exposure system that is substantially similar. The term "substantially similar" as used herein may refer to "having the same components and the same functions" or "similar components and similar functions within an acceptable range of variation that may occur."

[0060] Additionally, the exposure process can be protected from being affected by contaminating materials in the photomask.

[0061] In the photomask, the photomask repair method, and the substrate processing method including the photomask repair method according to the embodiments of the inventive concept, by filling the drain hole with the protection layer, a subsequent exposure process can be prevented from being affected by the drain hole.

[0062] Figures 17 to 20 It shows that according to Figure 5 FIG. 1 is a flow chart of a substrate processing method.

[0063] In the following description, for the sake of simplicity, the previous reference Figures 1 to 16 The described elements may be identified by the same reference numerals without repeating their descriptions.

[0064] refer to Fig.17 and Fig.18 , the diameter DA2 of the discharge hole Eha can be larger than the diameter DA1 of the defective area. The discharge hole Eha can be formed by various methods. For example, the discharge hole Eha can be formed by an electron beam etching process. In other words, the discharge hole Eha can be formed by an electron beam emitted from the etching device 4. However, the inventive concept is not limited to this example. Since the discharge hole Eha has a large diameter, the contaminated material DF can be removed quickly and efficiently.

[0065] refer to Fig.19 , a protective layer 9a may be formed in the discharge hole Eha. The diameter of the protective layer 9a may be larger than the reference Fig.15 Describes the diameter.

[0066] refer to Fig. 20 , an upper protective layer 9xa may be formed on the protective layer 9a. The width of the upper protective layer 9xa may be greater than the width of the protective layer 9a.

[0067] In the photomask, the photomask repair method, and the substrate processing method including the photomask repair method according to the embodiments of the inventive concept, the diameter of the exhaust hole may be larger than the diameter of the defective region. Therefore, the contamination material may be efficiently removed from the defective region.

[0068] Figure 21 to Figure 27 It shows that according to Figure 5 FIG. 1 is a flow chart of a substrate processing method.

[0069] In the following description, for the sake of simplicity, the previous reference Figures 1 to 20 The described elements may be identified by the same reference numerals without repeating their descriptions.

[0070] refer to Fig.21 , forming the discharge hole can be performed by an atomic force microscope (AFM) 6. The AFM 6 may include an AFM tip 61 and a connecting member 63. The AFM tip 61 may have a width that decreases in a downward direction. The connecting member 63 may be provided in the form of a cantilever rod. The AFM tip 61 may extend downward from the end of the connecting member 63.

[0071] refer to Fig. 22 , the AFM tip 61 may be used to press the gray area. More specifically, the AFM tip 61 may be moved downward to press the defective area in which the contamination material DF exists. Thus, the exhaust hole Ehb may be formed in the mask RT.

[0072] refer to Fig.23 In the case where the AFM tip 61 has a shape narrowed downward, the exhaust hole Ehb may also have a shape narrowed downward. The contaminant material DF may be exposed through the exhaust hole Ehb.

[0073] refer to Fig.24 , contaminated material DF (see, for example, Fig.23 ) can be discharged through the discharge hole Ehb. Therefore, an empty space Ihb can be formed between the capping layer 3 and the multilayer 1.

[0074] refer to Fig.25 , gray area R2 (see, for example, Figure 8 ) can be restored by keeping the photomask RT from which the contamination material DF is removed as it is during a specific time period. More specifically, the photomask RT can be kept as it is during the second time period, and in this case, the portion 3x of the capping layer 3, the portion 5x of the absorption layer 5, and / or the portion 7x of the anti-reflection layer 7 can be partially restored. The restoration of the photomask RT can be performed by elastic deformation.

[0075] refer to Fig.26 , a protective layer 9b may be formed in the discharge hole Ehb to fill the discharge hole Ehb.

[0076] refer to Fig. 27 , an upper protective layer 9xb may be formed on the protective layer 9b. The upper protective layer 9xb may be formed to have a width greater than that of the upper portion of the protective layer 9. The upper protective layer 9xb may cover the topmost portion of the interface between the protective layer 9b and the anti-reflection layer 7. Therefore, the interface between the protective layer 9b and the anti-reflection layer 7 may not be exposed to the outside.

[0077] In the photomask, the photomask repair method and the substrate processing method including the photomask repair method according to the embodiments of the inventive concept, the AFM can be used to form a drain hole in the photomask. By forming the drain hole in the photomask using a simple device, contaminated materials can be discharged.

[0078] In a photomask, a photomask repair method, and a substrate processing method including the photomask repair method according to an embodiment of the inventive concept, the life of the photomask may be improved by removing contamination materials formed in the photomask.

[0079] In a reticle, a reticle repair method, and a substrate processing method including the reticle repair method according to an embodiment of the inventive concept, an exposure process performed on a substrate may be prevented from being affected by a contamination material formed in the reticle.

[0080] In a reticle, a reticle repair method, and a substrate processing method including the reticle repair method according to an embodiment of the inventive concept, contamination materials may be removed from a region of the reticle where a dummy hole does not exist.

[0081] While example embodiments of the inventive concept have been particularly shown and described, it will be understood by those skilled in the art that changes in form and details may be made therein without departing from the spirit and scope of the invention.

Claims

1. A mask repair method, comprising: preparing a photomask; forming a discharge hole in the photomask; exhausting contaminated material from the photomask through the exhaust aperture; as well as After the pollutant material is discharged, a protective layer is formed in the discharge hole to fill the discharge hole, Wherein, the photomask comprises: Main pattern area; a dummy pattern area outside the main pattern area; and A gray area is between the main pattern area and the dummy pattern area, wherein forming the exhaust hole in the mask includes forming the exhaust hole in the gray area.

2. The photomask repair method according to claim 1, wherein: The grey areas include: Multi-layer; a capping layer on the multiple layers; an absorbent layer on the capping layer; and an antireflection layer, on the absorbing layer, Wherein, forming the drain hole in the gray area includes forming the drain hole to extend from a top surface of the anti-reflection layer to a bottom surface of the capping layer.

3. The photomask repair method according to claim 2, wherein the multilayer comprises a plurality of silicon layers, and The protection layer contacts an upper surface of an uppermost silicon layer among the silicon layers.

4. The photomask repair method according to claim 2, wherein: The capping layer includes a ruthenium Ru layer.

5. The photomask repair method according to claim 1, wherein: The contaminating material includes hydrogen, and Expelling the contaminated material from the reticle includes leaving the reticle intact during a first period of time.

6. The photomask repair method according to claim 5, further comprising restoring the gray area after exhausting the contaminated material from the photomask and before forming the protective layer, in, Restoring the gray area includes leaving the reticle intact during a second period of time.

7. The photomask repair method according to claim 1, wherein: The contaminating material includes hydrogen, and Expelling the contaminant material from the reticle includes vibrating the reticle.

8. The photomask repair method according to claim 1, wherein: The forming of the exhaust hole in the gray area is performed by an electron beam etching process.

9. The photomask repair method according to claim 1, wherein: Forming the drain hole in the gray area includes pressing the gray area using an atomic force microscope (AFM) tip.

10. The photomask repair method according to claim 1, wherein: Forming the protection layer is performed using an electron beam deposition repair process.

11. The photomask repair method according to claim 1, wherein: The protective layer includes chromium (Cr).

12. The photomask repair method according to claim 1, further comprising: After forming the protective layer, an upper protective layer is formed on a top surface of the protective layer.

13. The photomask repair method according to claim 12, wherein: The width of the lower portion of the upper protective layer is greater than the width of the upper portion of the protective layer.

14. The photomask repair method according to claim 1, further comprising: placing a substrate in an exposure system; as well as An exposure process is performed on the substrate using the exposure system and the photomask.

15. A substrate processing method, comprising: Detect defective areas of the mask; Repairing the photomask to form a repaired photomask; placing a substrate in an exposure system; as well as performing an exposure process on the substrate using the exposure system and the repaired mask, Wherein, repairing the photomask comprises: forming an exhaust hole in the photomask; and discharging contaminant material from the defective area through the discharge hole, Wherein, forming the exhaust hole in the mask includes forming the exhaust hole in the defective area.

16. The substrate processing method according to claim 15, wherein: The photomask comprises: Multi-layer; a capping layer on the multiple layers; an absorbing layer on the cover layer; an anti-reflection layer on the absorbing layer; and a protective layer, arranged to penetrate the anti-reflection layer, the absorption layer and the capping layer, The protection layer includes a material different from each of the anti-reflection layer, the absorption layer and the capping layer.

17. A substrate processing method, comprising: placing a substrate in an exposure system; as well as performing an exposure process on the substrate using the exposure system and the mask; Wherein, the photomask comprises: a main pattern region in which mask holes are formed; a dummy pattern region in which dummy holes spaced apart from the mask holes are formed; and a gray area between the main pattern area and the dummy pattern area, wherein each of the main pattern area, the dummy pattern area and the gray area comprises: Multi-layer; a capping layer on the multiple layers; an absorbing layer on the cover layer; an anti-reflection layer on the absorbing layer; and a protective layer, arranged to penetrate the anti-reflection layer, the absorption layer and the capping layer, in: The mask hole is configured to penetrate the anti-reflection layer, the absorption layer and the capping layer, and The gray area extends from a top surface of the anti-reflective layer to a top surface of the multilayer.

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