A Brokaw reference circuit for simultaneously adjusting low-temperature-drift voltage and low-temperature-drift current

Abstract

The object of the present invention is to provide a Brokaw reference circuit for simultaneously adjusting low-temperature-drift voltage and low-temperature-drift current. The circuit includes: at least one current amplification branch; the input end of the current amplification branch is connected to the drain of the first MOS transistor, and the output end is grounded through a resistor for adjusting the low-temperature-drift current; a plurality of the current amplification branches are connected in parallel. The topological structure of the present invention is simple. Only by adjusting the corresponding resistance value according to actual requirements, the bias voltage with the required low-temperature-drift coefficient can be obtained.

Description

Technical Field

[0001] The present invention relates to the field of integrated circuit technology, and particularly to a Brokaw reference circuit for simultaneously adjusting low-temperature-drift voltage and low-temperature-drift current. Background Art

[0002] The reference circuit is a basic module in an integrated circuit, providing a reference voltage and a reference current that are less affected by process, voltage, and temperature fluctuations for other circuit modules. The Brokaw reference circuit is a bandgap voltage reference circuit, mainly used to provide a stable and accurate voltage reference source. The design of the Brokaw reference circuit is based on the bandgap characteristics of semiconductor materials, and through a temperature compensation mechanism, it ensures that the output voltage has extremely high stability and accuracy when the temperature changes and the power supply conditions change. The basic principle of the Brokaw reference circuit is to utilize the bandgap characteristics in semiconductor materials. In silicon semiconductor materials, there is a fixed bandgap, which remains relatively stable when the temperature changes. The Brokaw reference circuit superimposes two different types of pn-junction voltages, and the rates of change of these voltages with temperature are different. By superimposing these two voltages in an appropriate ratio, a stable voltage value that hardly changes with temperature can be obtained. The main components of the Brokaw reference circuit include a bipolar transistor pair, a current mirror, and a differential amplifier. The bipolar transistor pair generates two different voltages related to temperature, the current mirror is used to amplify these voltages, and the differential amplifier is used to adjust and stabilize the output voltage. By adjusting the ratios of resistors and transistors, temperature compensation can be achieved, thereby obtaining a reference voltage independent of temperature.

[0003] The existing Brokaw reference circuit is as Figure 2 shown, the reference voltage , is the voltage between the base and the emitter of the triode ; , where is the Boltzmann constant, is the absolute temperature, is the electronic charge; is the ratio of the emitter areas of the triodes and . The thermal voltage has a positive temperature coefficient, has a negative temperature coefficient. When takes a suitable value, and offset each other's positive and negative temperature coefficients, obtaining a low-temperature-drift voltage . After calculation, .

[0004] With the continuous progress of the process, the feature size is continuously reduced, the power supply voltage is continuously decreased, and the power supply voltage needs to be greater than the reference voltage . When the power supply voltage is lower than 1.5V, the reference circuit of the existing technology can no longer work. Therefore, it is an inevitable development trend for the reference circuit to work at a low power supply voltage. And the reference voltage value in the existing technology is fixed. When other reference voltages are needed, they can only be achieved through other voltage dividing circuits, and a low-temperature drift reference current cannot be provided simultaneously. SUMMARY OF THE INVENTION

[0005] The object of the present invention is to provide a Brokaw reference circuit that can simultaneously adjust the low-temperature drift voltage and the low-temperature drift current. The circuit topology is simple, and only by adjusting the corresponding resistance value according to the actual needs, the bias voltage with the required low-temperature drift coefficient can be obtained.

[0006] A Brokaw reference circuit that can simultaneously adjust the low-temperature drift voltage and the low-temperature drift current, comprising: at least one current amplification branch;

[0007] The input end of the current amplification branch is connected to the drain of the first MOS transistor, and the output end is grounded through a resistor for adjusting the low-temperature drift current;

[0008] Multiple current amplification branches are connected in parallel.

[0009] Preferably, the current amplification branch includes: a first resistor and a Darlington composite transistor;

[0010] The Darlington composite transistor includes a first triode and a second triode;

[0011] The base of the first triode is connected to the source of the second triode, the source is connected to the emitter of the second triode, and the emitter is connected to the first resistor;

[0012] The base of the second triode is connected to the first resistor, and the emitter is connected to the third resistor.

[0013] Preferably, it further includes: a resistor branch;

[0014] The resistor branch includes at least one resistor, and the resistor branch is connected in parallel at both ends of the current branch.

[0015] Preferably, it further includes: a third resistor, a first amplifier, a first MOS transistor and a second MOS transistor;

[0016] The first end of the third resistor is respectively connected to the second triode and the fourth triode, and the second end is grounded;

[0017] The gate of the first MOS transistor is connected to the gate of the second MOS transistor, the drain is connected to the current amplification branch, and the source is connected to the power supply voltage;

[0018] The source of the second MOS transistor is connected to the power supply voltage;

[0019] The output terminal of the first amplifier is connected to the gate of the second MOS transistor.

[0020] Preferably, the area ratio of the second MOS transistor to the first MOS transistor is M:1, and M is an integer multiple of 1.

[0021] A control method for a Brokaw reference circuit that simultaneously adjusts low-temperature-drift voltage and low-temperature-drift current, which is applied to a Brokaw reference circuit that simultaneously adjusts low-temperature-drift voltage and low-temperature-drift current, includes:

[0022] Calculating the current flowing through the third resistor;

[0023] Calculating the voltage of the third resistor according to the current of the third resistor;

[0024] Calculating the bias voltage of the low-temperature-drift coefficient according to the voltage of the third resistor.

[0025] Preferably, the calculating the current flowing through the third resistor includes:

[0026] According to the virtual short effect of the operational amplifier, , the current flowing through two resistors is equal, and the value is:

[0027] ;

[0028] The current flowing through resistor is and the value is:

[0029] ;

[0030] The current flowing through resistor is and the value is:

[0031] .

[0032] Preferably, the calculating the voltage of the third resistor according to the current of the third resistor includes:

[0033] The current amplification factor of the Darlington composite transistor , ignoring the influence of the base current of the triode on the current ;

[0034] Resistor Voltage is:

[0035] ;

[0036] , where is the Boltzmann constant, is the absolute temperature, is the electronic charge quantity;

[0037] Thermal voltage has a positive temperature coefficient, has a negative temperature coefficient, and the current is a current proportional to the absolute temperature, and the current is a current inversely proportional to the absolute temperature;

[0038] When is a suitable value, the positive and negative coefficients of the current and the current cancel each other out, resulting in a current with a low temperature drift coefficient, and the current , by changing the area ratio of the MOS transistors and to each other , the bias current with the required low temperature drift coefficient is obtained.

[0039] Preferably, the bias voltage for calculating the low temperature drift coefficient according to the voltage of the third resistor includes:

[0040] When the current with a low temperature drift coefficient flows through the resistor , the obtained voltage is the low temperature drift coefficient;

[0041] By changing the ratio of the two resistors , the bias voltage with the required low temperature drift coefficient is obtained.

[0042] An electronic device includes: a chip, a processor, and a memory. The memory is used to store computer program code, and the computer program code includes computer instructions. When the chip executes the computer instructions, the electronic device executes a control method for a Brokaw reference circuit that simultaneously adjusts the low temperature drift voltage and the low temperature drift current.

[0043] The beneficial effect of the present invention is that: in the prior art, the value of the voltage cannot be adjusted, resulting in the limitation of the power supply voltage , and it cannot be lower than 1.5V. Assuming that the voltage in the present invention is set to 0.1V, then the node is , At room temperature, it is generally (0.6V-0.7V), then Greater than 0.8V, consider MOS tube The source-drain voltage required for normal operation is 0.2V, and the power supply voltage required by the present invention is The minimum is 1V, which is a significant improvement over existing technologies. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0045] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0046] Figure 1 A structural diagram of a brockaw reference circuit for simultaneously adjusting low-temperature drift voltage and low-temperature drift current according to the present invention;

[0047] Figure 2 A reference circuit diagram of the prior art of the present invention;

[0048] Figure 3 The figure is a schematic diagram of the hardware structure of an electronic device of the present invention. DETAILED DESCRIPTION

[0049] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0050] It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present invention are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0051] In addition, the descriptions involving "first", "second", etc. in the present invention are for descriptive purposes only, and should not be construed as indicating or implying their relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions between various embodiments may be combined with each other, but it must be based on the ability of those of ordinary skill in the art to implement. When the combination of technical solutions results in contradictions or cannot be implemented, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0052] The prior art Brokaw reference circuit is as Figure 2 shown, and the reference voltage , is the voltage between the base and the emitter of the triode ; , where is the Boltzmann constant, is the absolute temperature, is the electronic charge quantity; is the ratio of the emitter areas of the triodes and . The thermal voltage has a positive temperature coefficient, has a negative temperature coefficient. When takes a suitable value, and offset each other's positive and negative temperature coefficients, resulting in a voltage with low temperature drift. After calculation, .

[0053] With the continuous progress of the process, the feature size is continuously reduced and the power supply voltage is continuously lowered. And the power supply voltage needs to be greater than the reference voltage . When the power supply voltage is lower than 1.5V, the prior art reference circuit can no longer work. Therefore, it is an inevitable development trend for the reference circuit to work at low power supply voltages. And the value of the reference voltage in the prior art is fixed. When other reference voltages are required, they can only be achieved through other voltage dividing circuits, and a reference current with low temperature drift cannot be provided simultaneously.

[0054] In the prior art, the inability to adjust the value of the voltage results in the limitation of the power supply voltage and it cannot be lower than 1.5V. Assuming that the voltage in the present invention is set to 0.1V, then the node is , which is generally (0.6V - 0.7V) at room temperature. Then Greater than 0.8V, consider the MOS transistor The source-drain voltage required for normal operation is 0.2V, and the power supply voltage required by the present invention Is at least 1V, which has been greatly improved compared with the prior art.

[0055] Embodiment 1

[0056] A Brokaw reference circuit for simultaneously adjusting low-temperature-drift voltage and low-temperature-drift current, refer to Figure 1 , including: at least one current amplification branch;

[0057] The input end of the current amplification branch is connected to the drain of the first MOS transistor, and the output end is grounded through a resistor for adjusting the low-temperature-drift current;

[0058] Low temperature drift refers to the phenomenon that component values change with temperature within a certain temperature range. When the temperature changes, the component values also change accordingly, and this change is called the temperature coefficient. Low temperature drift means that in a low temperature environment, the temperature coefficient of the component value is very small, that is, the range of change of the component value is very small.

[0059] Low-temperature-drift current refers to the minute change in the output current of a current source when the temperature changes. The smaller the low-temperature-drift current, the better the stability of the current source when the temperature changes. Low-temperature-drift current refers to the change amount of the output current of a current source when the temperature changes. An ideal current source should maintain a constant output current when the temperature changes, but in fact, due to material and circuit design limitations, temperature changes will cause minute fluctuations in the current. The smaller the low-temperature-drift current, the smaller this fluctuation, and the higher the stability and accuracy of the current source.

[0060] Low-temperature-drift voltage refers to the ratio of the change amount of the output voltage of a voltage reference device to the nominal voltage value when the temperature changes is very small. This characteristic enables the voltage reference device to maintain high stability and accuracy when the temperature changes.

[0061] Multiple current amplification branches are connected in parallel.

[0062] The main functions of the current amplification branch include signal amplification, improving system sensitivity, and increasing circuit stability. The current amplification branch can amplify the weak input signal current to a current range suitable for subsequent processing, thereby increasing the signal strength and maintaining the accuracy and stability of the signal. By using the current amplification branch, the signal current can be amplified, and the noise will also be amplified. However, due to the improvement of the signal-to-noise ratio, the sensitivity of the system also increases. Through subsequent signal processing, the noise can be filtered out, thereby improving the noise tolerance and detection accuracy of the system. The current amplification branch, through the design of the negative feedback circuit, enables the current at the output end to have a high inhibitory effect on the fluctuations of the input current, thereby improving the stability of the circuit.

[0063] Preferably, the current amplification branch includes: a first resistor and a Darlington composite transistor;

[0064] The Darlington composite transistor includes a first triode and a second triode;

[0065] The Darlington composite transistor, also known as the Darlington transistor, is a semiconductor device formed by connecting two or more triodes in series. Its basic principle is to connect two triodes together to form an equivalent new triode, thereby achieving current amplification. The Darlington composite transistor is characterized by a very high amplification factor and is usually used in application scenarios that require high current amplification.

[0066] The base of the first triode is connected to the source of the second triode, the source is connected to the emitter of the second triode, and the emitter is connected to the first resistor;

[0067] The base of the second triode is connected to the first resistor, and the emitter is connected to the third resistor.

[0068] The Darlington composite transistor is composed of two triodes connected in series. The collector of the first triode is connected to the collector of the second triode, and the emitter of the first triode is connected to the base of the second triode. The base of the first triode is the base of the Darlington composite transistor, and the emitter of the second triode is the emitter of the Darlington composite transistor. This connection method makes the amplification factor of the Darlington composite transistor the product of the amplification factors of the two triodes.

[0069] The working principle of the Darlington composite transistor is based on current amplification. When a small base current is applied to the base of the first transistor, the first transistor conducts, and its collector current becomes the base current of the second transistor. Since the second transistor also conducts, the final output current is the product of the current amplification factors of the two transistors, thereby achieving high-magnitude current amplification. In addition, the Darlington composite transistor can also be used as a switch. Due to its high current gain, only a very small base current is required to drive a large load current.

[0070] In an embodiment of the present invention, there are two current amplification branches. The first one is composed of the first resistor on the left and the triode , the triode to form a current amplification branch. The second one is composed of the first resistor on the right and the triode , the triode to form a current amplification branch. Next to the current amplification branch, there is also a resistor branch composed of the resistor .

[0071] And the area ratio of the emitters of the triodes , , and , and is , and is ; that is, the amplification factors of the two Darlington composite transistors are equal.

[0072] Preferably, it further includes: a resistor branch;

[0073] The resistor branch includes at least one resistor, and the resistor branch is connected in parallel across the current branch.

[0074] In an embodiment of the present invention, the functions of the resistor branch include shunting and voltage division, protecting other components in the circuit to operate safely, preventing components from being damaged due to excessive current, and the resistor branch forms a negative feedback circuit to adjust the circuit through the feedback branch, improving the performance and stability of the circuit‌. In Figure 1 , the resistor branch is the branch where the resistor is located, and the resistor is connected in parallel with the two current branches.

[0075] Preferably, it further includes: a third resistor, a first amplifier, a first MOS transistor, and a second MOS transistor;

[0076] The first end of the third resistor is respectively connected to the second triode and the fourth triode, and the second end is grounded;

[0077] The gate of the first MOS transistor is connected to the gate of the second MOS transistor, the drain is connected to the current amplification branch, and the source is connected to the power supply voltage;

[0078] The source of the second MOS transistor is connected to the power supply voltage;

[0079] The output end of the first amplifier is connected to the gate of the second MOS transistor.

[0080] In the embodiment of the present invention, the third resistor is Figure 1 in , and the first amplifier is Figure 1 the OPA in . By calculating the voltage across the resistor and the current passing through the resistor

[0081] , the bias current with the required low temperature drift coefficient and the bias voltage with the required low temperature drift coefficient can be obtained.

[0082] Preferably, the area ratio of the second MOS transistor to the first MOS transistor is M:1. Figure 1 In , the first MOS transistor , and the area ratio between the two is . The positive and negative coefficients of the current and the current cancel each other out, obtaining a current with a low temperature drift coefficient. And for the current , by changing the area ratio between the MOS transistor and , the bias current with the required low temperature drift coefficient can be obtained. Similarly, when the current with a low temperature drift coefficient flows through the resistor , the obtained voltage also has a low temperature drift coefficient. The voltage in the present invention has an additional coefficient compared with the voltage in the prior art. Then, by changing the ratio of the two resistors , the bias voltage with the required low temperature drift coefficient can be obtained, and M is an integer multiple of 1.

[0083] Embodiment 2

[0084] A control method for a Brokaw reference circuit that simultaneously adjusts the low temperature drift voltage and the low temperature drift current, which is applied to a Brokaw reference circuit that simultaneously adjusts the low temperature drift voltage and the low temperature drift current, includes:

[0085] S100, calculating the current flowing through the third resistor;

[0086] S200, calculating the voltage of the third resistor according to the current of the third resistor;

[0087] S300, calculating the bias voltage with the low temperature drift coefficient according to the voltage of the third resistor.

[0088] The bias voltage is a constant voltage provided in an electronic device or circuit to enable its normal operation. Its main function is to operate electronic devices (such as transistors or operational amplifiers) in their appropriate operating regions to achieve the required functions. The essence of the bias voltage is to keep passive devices in a normal operating state, thereby enabling control of their input and output characteristics. In an amplifier circuit, the bias voltage can make transistors or other non-linear components always exhibit electrical characteristics similar to DC operation when the input signal changes, to meet the correct transmission and amplification of information signals. In a filter circuit, an appropriate bias voltage can reduce the equivalent capacitance of passive devices and improve the filtering efficiency. In an oscillator circuit, an appropriate bias voltage can keep the entire circuit at a constant amplitude and frequency.

[0089] Preferably, in S100, calculating the current flowing through the third resistor includes:

[0090] According to the virtual short effect of the operational amplifier, , the current flowing through the two resistors is equal, and the value is:

[0091] ;

[0092] Virtual short refers to a phenomenon caused by an excessively large input resistance when the power supply voltage is too high. For example, when a resistor is connected to the output terminal of an operational amplifier, if the resistance value of this resistor is large, it will cause the current to increase, resulting in an increase in the power supply voltage, causing the operating point of the operational amplifier to shift and generating overshoot. If this resistor is connected in parallel to the output terminal of the operational amplifier, the current will decrease, thereby reducing the input voltage. This effect is called cancellation.

[0093] The current flowing through the resistor is and the value is:

[0094] ;

[0095] The current flowing through the resistor is and the value is:

[0096] .

[0097] The current amplification factor of the Darlington composite transistor is much higher than that of ordinary transistors, which can meet the requirements of high amplification factors and at the same time reduce the energy loss caused by impedance mismatch. By reducing the stray signals at the input end and unreasonable impedance matching, the Darlington composite transistor can effectively reduce noise. The circuit response speed of the Darlington composite transistor is relatively fast and is suitable for high-speed operating systems. The static current of the Darlington composite transistor is very small, so the power consumption of the drive and feedback circuits is also small.

[0098] In the embodiment of the present invention, the current amplification factor of the Darlington composite transistor has been greatly improved compared with the current amplification factor of a single transistor in the prior art, and the base current of the transistor can be ignored for the current influence.

[0099] Preferably, for S200, calculating the voltage of the third resistor according to the current of the third resistor includes:

[0100] The current amplification factor of the Darlington composite transistor , ignoring the influence of the base current of the transistor on the current influence;

[0101] The voltage of the resistor is: is:

[0102] ;

[0103] , where is the Boltzmann constant, is the absolute temperature, is the electron charge quantity;

[0104] The thermal voltage is a positive temperature coefficient, is a negative temperature coefficient, the current is a current proportional to the absolute temperature, the current is a current inversely proportional to the absolute temperature;

[0105] When is a suitable value, the positive and negative coefficients of the current and the current cancel each other out, obtaining a current with a low temperature drift coefficient, and the current , by changing the area ratio between the MOS transistor and , the bias current with the required low temperature drift coefficient is obtained.

[0106] ‌The bias current is the direct current flowing between the two input terminals of an operational amplifier (abbreviated as Op - Amp). Ideally, there is no current flowing in or out of the input ports of the operational amplifier, but in actual devices, there are two bias currents at the input ports. The generation of the bias current is mainly due to the existence of components such as transistors and resistors inside the operational amplifier. These components cause a certain current flow between the input ports. The magnitude and direction of the bias current change with the structure of the operational amplifier and the working environment.

[0107] Preferably, in S300, calculating the bias voltage with a low temperature drift coefficient according to the voltage of the third resistor includes:

[0108] When the current with a low temperature drift coefficient flows through the resistor and the obtained voltage is the low temperature drift coefficient;

[0109] By changing the ratio of the two resistors the bias voltage with the actually required low temperature drift coefficient is obtained.

[0110] The bias voltage with a low temperature drift coefficient refers to a bias voltage with a low temperature coefficient, which can remain relatively stable when the temperature changes, thereby reducing the error caused by temperature changes.

[0111] Due to the fact that the voltage value in the prior art cannot be adjusted, the power supply voltage is limited and cannot be lower than 1.5V. Assuming that the voltage in the present invention is set to 0.1V, then the node is , which is generally (0.6V - 0.7V) at room temperature. Then is greater than 0.8V. Considering the source-drain voltage of 0.2V required for the normal operation of the MOS transistor , the power supply voltage required by the present invention is at least 1V, which is a significant improvement compared to the prior art.

[0112] Embodiment 3

[0113] An electronic device includes: a chip, a processor, and a memory. The memory is used to store computer program code, and the computer program code includes computer instructions. When the chip executes the computer instructions, the electronic device executes a control method for a Brokaw reference circuit that simultaneously adjusts the low temperature drift voltage and the low temperature drift current.

[0114] Referring to Figure 3 , this electronic device 2 includes a processor 21, a memory 22, an input device 23, and an output device 24. The processor 21, the memory 22, the input device 23, and the output device 24 are coupled through a connector, which includes various interfaces, transmission lines, or buses, etc. The embodiments of the present invention do not limit this. It should be understood that in various embodiments of the present invention, coupling means being interconnected in a specific manner, including being directly connected or indirectly connected through other devices, for example, being connected through various interfaces, transmission lines, buses, etc.

[0115] The processor 21 may be one or more graphics processing units (GPUs). When the processor 21 is a GPU, the GPU may be a single-core GPU or a multi-core GPU. Optionally, the processor 21 may be a processor group composed of multiple GPUs, and multiple processors are coupled to each other through one or more buses. Optionally, the processor may also be other types of processors, etc., which are not limited in the embodiments of the present invention.

[0116] The memory 22 can be used to store computer program instructions and various computer program codes including the program codes for executing the solution of the present invention. Optionally, the memory includes but is not limited to random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM), or compact disc read-only memory (CD-ROM), and this memory is used for relevant instructions and data.

[0117] The input device 23 is used to input data and / or signals, and the output device 24 is used to output data and / or signals. The output device 24 and the input device 23 may be independent devices or an integrated device.

[0118] In the prior art, the voltage value cannot be adjusted, resulting in the power supply voltage being limited and unable to be lower than 1.5V. Assuming that the voltage in the present invention is set to 0.1V, then the node is , which is generally (0.6V - 0.7V) at room temperature. Then is greater than 0.8V. Considering the source-drain voltage of 0.2V required for the normal operation of the MOS transistor , the minimum power supply voltage required by the present invention is 1V, which has been greatly improved compared with the prior art.

[0119] The above are only the specific embodiments of the present invention, enabling those skilled in the art to understand or implement the present invention. Various modifications to these embodiments will be obvious to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to these embodiments shown herein, but rather to the broadest scope consistent with the principles and novel features claimed herein.

Claims

1. A brockaw reference circuit for simultaneously regulating low temperature drift voltage and low temperature drift current, characterized in that: include: at least one current amplifying branch; The input end of the current amplification branch is connected to the drain of the first MOS tube, and the output end is grounded through a resistor, so as to adjust the low temperature drift current; A plurality of the current amplifying branches are connected in parallel; It also includes: a third resistor, a first amplifier, a first MOS tube and a second MOS tube; The first end of the third resistor is connected to the second transistor and the fourth transistor respectively, and the second end is grounded; The gate of the first MOS tube is connected to the gate of the second MOS tube, the drain is connected to the current amplification branch, and the source is connected to the power supply voltage; The source of the second MOS tube is connected to the power supply voltage; The output end of the first amplifier is connected to the gate of the second MOS tube; Also includes: a resistance branch; The resistance branch includes at least one resistor, and the resistance branch is connected in parallel at both ends of the current branch; The area ratio of the second MOS tube to the first MOS tube is M:1, where M is an integer multiple of 1.

2. The brockaw reference circuit for simultaneously adjusting low temperature drift voltage and low temperature drift current according to claim 1, characterized in that: The current amplification branch includes: a first resistor and a Darlington compound tube; The Darlington compound tube comprises a first triode and a second triode; The base of the first transistor is connected to the source of the second transistor, the source is connected to the emitter of the second transistor, and the emitter is connected to the first resistor; The base of the second transistor is connected to the first resistor, and the emitter is connected to the third resistor.

3. A brockaw reference circuit control method for simultaneously adjusting low temperature drift voltage and low temperature drift current, applied to a brockaw reference circuit for simultaneously adjusting low temperature drift voltage and low temperature drift current as claimed in any one of claims 1 to 2, characterized in that: include: Calculate the current flowing through the third resistor; Calculating the voltage of the third resistor according to the current of the third resistor; The bias voltage of the low temperature drift coefficient is calculated according to the voltage of the third resistor.

4. The brockaw reference circuit control method for simultaneously adjusting low temperature drift voltage and low temperature drift current according to claim 3, characterized in that: The calculating the current flowing through the third resistor comprises: According to the virtual short effect of the operational amplifier, , flows through two resistors Current Equal, the value is: ； Flow through resistor Current It is expressed as: ； Flow through resistor Current It is expressed as: 。 5. The brockaw reference circuit control method for simultaneously adjusting low temperature drift voltage and low temperature drift current according to claim 3, characterized in that: The step of calculating the voltage of the third resistor according to the current of the third resistor comprises: Current amplification factor of Darlington compound tube , ignoring the effect of the transistor base current on the current The impact of resistance Voltage for: ； ,in is the Boltzmann constant, is the absolute temperature, is the electron charge; Thermal voltage is a positive temperature coefficient, is a negative temperature coefficient, the current The current is proportional to the absolute temperature. The current is negatively proportional to the absolute temperature; when When the current is the preset value, With current The positive and negative coefficients of the two cancel each other out, and a current with a low temperature drift coefficient is obtained. , and the current , by changing the MOS tube and The ratio of the two areas , and obtain the bias current with the actual required low temperature drift coefficient.

6. The brockaw reference circuit control method for simultaneously adjusting low temperature drift voltage and low temperature drift current according to claim 5, characterized in that: The bias voltage for calculating the low temperature drift coefficient according to the voltage of the third resistor comprises: When the low temperature drift coefficient current Flow through resistor , the resulting voltage is the low temperature drift coefficient; By changing the two resistors The ratio of is used to obtain the bias voltage with the actual required low temperature drift coefficient.

7. An electronic device, characterized in that: include: A chip, a processor and a memory, wherein the memory is used to store computer program codes, wherein the computer program codes include computer instructions, and when the chip executes the computer instructions, the electronic device executes a brockaw reference circuit control method for simultaneously adjusting a low-temperature drift voltage and a low-temperature drift current as described in any one of claims 3 to 6.

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