Plasma processing device and etching equipment

Abstract

The embodiment of the invention provides a plasma processing device and etching equipment, and relates to the technical field of semiconductors. The plasma processing device comprises a lining, a shielding plate, a driving mechanism and a stopping piece. An opening is formed in the side wall of the lining, the shielding plate is connected with the driving mechanism, and the driving mechanism can control the shielding plate to ascend and descend so as to shield the opening; and the stop piece is arranged between the bushing and the baffle plate. When the driving mechanism controls the shielding plate to shield the opening of the lining, the stopping piece limits the shielding plate, so that a preset gap is formed between the shielding plate and the lining in the lifting direction of the shielding plate, the shielding plate does not make contact with the lining, the situation that the shielding plate collides with the lining in the lifting process of the shielding plate is avoided, and the service life of the lining is prolonged. Therefore, the functions of the parts of the plasma processing device can be ensured, and pollutants in the reaction space of the plasma processing device can be reduced.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a plasma processing device and an etching equipment. Background Art

[0002] In the etching process of semiconductor manufacturing, whether it is capacitively coupled plasma (CCP) or inductively coupled plasma (ICP), the etching process results are greatly affected by the plasma uniformity in the reaction space in the plasma region of the plasma processing device (PM). In order to achieve plasma uniformity, the reaction space of the plasma processing device is assembled and matched with a liner and a slit door shutter to form a symmetrical and relatively closed space. In order to realize the film transmission between the plasma processing device and the transmission chamber (TM), it is necessary to control the movement of the slit door to realize the opening and closing of the film transmission port. For example, by controlling the lifting and lowering of the slit door by a cylinder, the opening on the side wall of the liner can be closed or opened, so that the cooperation of the liner and the slit door can block the plasma.

[0003] However, during the lifting and lowering process of the shield plate, the shield plate and the bushing are prone to collision, resulting in damage to the components of the plasma processing device and their coatings, affecting the functions of the components of the plasma processing device and increasing pollutants in the reaction space of the plasma processing device. Summary of the invention

[0004] The embodiments of the present application provide a plasma processing device and an etching equipment to avoid the problem of collision between a shielding plate and a bushing during the lifting and lowering process of the shielding plate.

[0005] On the one hand, an embodiment of the present application provides a plasma processing device, including a bushing, a shielding plate, a driving mechanism and a stopper;

[0006] The side wall of the bushing has an opening, the shielding plate is connected to the driving mechanism, and the driving mechanism is used to control the shielding plate to rise or fall along a direction perpendicular to the bottom of the plasma processing device to shield the opening;

[0007] The stopper is installed between the bushing and the shielding plate, and is configured to limit the shielding plate when the shielding plate blocks the opening, so that a preset gap exists between the shielding plate and the bushing in the lifting direction of the shielding plate.

[0008] In a possible implementation, the shielding plate has a stop surface, the bushing has a matching surface, the stop surface and the matching surface are arranged relative to each other in the lifting direction of the shielding plate, and the stop member is fixed on the stop surface and / or the matching surface.

[0009] In a possible implementation manner, the stop member is a magnetic member or an elastic member.

[0010] In a possible implementation, the shielding plate has a first end and a second end, the first end and the second end are arranged opposite to each other in the lifting direction of the shielding plate, the first end is connected to the driving mechanism, the bushing has a fixed end, the fixed end and the second end are arranged opposite to each other in the lifting direction of the shielding plate, and the fixed end is provided with a fixing surface;

[0011] When the shielding plate shields the opening, the gap between the second end and the fixing surface is the preset gap.

[0012] With such an arrangement, during the raising and lowering process of the baffle plate, the second end of the baffle plate does not contact the fixed end of the sleeve, thereby avoiding collision between the second end of the baffle plate and the fixed end of the sleeve during the raising and lowering process of the baffle plate. This can ensure the functions of the components of the plasma processing device and reduce pollutants in the reaction space of the plasma processing device.

[0013] In a possible embodiment, a conductive spiral tube is fixed on the fixed surface of the bushing or the second end of the baffle plate. When the baffle plate blocks the opening, the compression amount of the conductive spiral tube between the baffle plate and the bushing is a preset compression amount, and the conductive spiral tube blocks the preset gap.

[0014] With such arrangement, when the shielding plate blocks the opening, the conductive spiral tube conducts the shielding plate and the bushing, and blocks the preset gap, so that the bushing and the shielding plate, the upper electrode and the lower electrode form a closed space, so that the plasma in the reaction chamber remains uniform.

[0015] In a possible implementation, it further includes a cavity and a cover, wherein the cavity and the cover form a reaction chamber, the bushing, the baffle plate and the stopper are located in the reaction chamber, and the driving mechanism is installed on the cavity or the cover.

[0016] In a possible implementation, the driving mechanism is mounted on the cavity and located at the bottom of the cavity, the driving mechanism is connected below the shielding plate, and the shielding plate moves toward the top of the cavity to shield the opening; or

[0017] The driving mechanism is installed on the covering member, the covering member is located at the top of the cavity, the driving mechanism is connected above the shielding plate, and the shielding plate moves toward the bottom of the cavity to shield the opening.

[0018] In a possible implementation manner, the driving mechanism is a motor or a cylinder.

[0019] In a possible implementation manner, the driving mechanism is a cylinder;

[0020] Wherein, when the cylinder is connected below the shielding plate, the sum of the elastic force of the conductive spiral tube, the force of the stopper on the shielding plate, the gravity of the piston rod of the cylinder and the gravity of the shielding plate is equal to the sum of the thrust of the cylinder and one standard atmospheric pressure; or,

[0021] When the cylinder is connected above the shielding plate, the sum of the elastic force of the conductive spiral tube and the force of the stop member on the shielding plate is equal to the sum of the thrust of the cylinder, one standard atmospheric pressure, the gravity of the piston rod of the cylinder and the gravity of the shielding plate.

[0022] Such an arrangement can balance the forces on the conductive spiral tube, the stopper, the baffle plate and the cylinder, ensure the compression amount of the conductive spiral tube, stabilize the conductive spiral tube, and ensure the gap between the baffle plate and the bushing, so that the baffle plate and the bushing do not contact in the lifting direction of the baffle plate and remain stable.

[0023] On the other hand, an embodiment of the present application provides an etching device, including a transmission chamber and a plasma processing device as described above;

[0024] Wafers are transferred between the plasma processing device and the transfer chamber.

[0025] The embodiments of the present application provide a plasma processing device and an etching device. When a driving mechanism controls a baffle plate to cover an opening of a sleeve, a stop member limits the position of the baffle plate, so that a preset gap is provided between the baffle plate and the sleeve in the lifting direction of the baffle plate. The baffle plate and the sleeve do not contact each other during the lifting process of the baffle plate, thereby avoiding the problem of collision between the baffle plate and the sleeve during the lifting process of the baffle plate. The functions of the components of the plasma processing device can be ensured, and pollutants in the reaction space of the plasma processing device can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, a brief introduction will be given below to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0027] Figure 1 A schematic diagram of the structure of a plasma processing device provided in Example 1 of the present application;

[0028] Figure 2 for Figure 1 The enlarged schematic diagram of point A in the middle;

[0029] Figure 3 for Figure 1 A schematic diagram of the structure of the plasma treatment device when the shielding plate is in an open state;

[0030] Figure 4 A schematic diagram of the structure of a plasma processing device provided in Example 2 of the present application;

[0031] Figure 5 for Figure 4 The enlarged schematic diagram of point B in the middle;

[0032] Figure 6 for Figure 4 A schematic diagram of the structure of a plasma processing device in which a shielding plate is in an open state.

[0033] Description of reference numerals:

[0034] 10-bushing; 101-opening;

[0035] 102-mating surface; 103-fixed end;

[0036] 20-shielding plate; 20a-first end;

[0037] 20b-second end; 201-stop surface;

[0038] 202- boss; 30- driving mechanism;

[0039] 40-conductive spiral tube; 50-stop member;

[0040] 60- chamber; 601- reaction chamber;

[0041] 70-covering member; 81-upper electrode;

[0042] 82-Lower electrode. DETAILED DESCRIPTION

[0043] The technical solution provided by this application will be described below in conjunction with the accompanying drawings.

[0044] It should be noted that the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0045] In this application, unless otherwise clearly specified and limited, the terms "installation", "connection", "fixation" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or communication with each other; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0046] In the present application, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being “above”, “above”, and “above” a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0047] In the above description, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0048] Due to the insufficient stroke accuracy of the cylinder, as well as the influence of factors such as thermal deformation, stress deformation and processing tolerance of the components of the plasma processing device, the shield plate is prone to collision with the bushing during the lifting process of the shield plate, resulting in damage to the components of the plasma processing device and their coatings, affecting the functions of the components of the plasma processing device, and also causing an increase in pollutants in the reaction space of the plasma processing device. It should be noted that in some examples, the components of the plasma processing device may include a shield plate, a bushing and a cavity. When the shield plate collides with the bushing, the shield plate and the shield plate coating are damaged, the bushing and the bushing coating are damaged, the cavity and the cavity coating are damaged, affecting the functions of the shield plate, the bushing and the cavity, and also increasing the types of pollutants and the number of pollutants.

[0049] In order to solve the above problems, an embodiment of the present application provides a plasma processing device and an etching device, in which a stopper is provided, and the stopper is installed between the bushing and the baffle plate. When the baffle plate is controlled by a driving mechanism to cover the opening of the bushing, the stopper limits the baffle plate, so that in the lifting direction of the baffle plate, there is a preset gap between the baffle plate and the bushing. During the lifting process of the baffle plate, the baffle plate and the bushing do not contact each other, thereby avoiding the problem of collision between the baffle plate and the bushing during the lifting process of the baffle plate, thereby ensuring the functions of the components of the plasma processing device and reducing the pollutants in the reaction space of the plasma processing device. It can be understood that the types of pollutants are reduced, as well as the amount of pollutants.

[0050] The plasma processing device and etching equipment provided in the embodiments of the present application are described in detail below in conjunction with specific embodiments.

[0051] like Figures 1 to 3 As shown, an embodiment of the present application provides a plasma processing device, including a sleeve 10 , a shielding plate 20 , a driving mechanism 30 and a stopper 50 .

[0052] The side wall of the liner 10 has an opening 101, and the shielding plate 20 is connected to the driving mechanism 30. The driving mechanism 30 is used to control the shielding plate 20 to rise or fall along a direction perpendicular to the bottom of the plasma processing device to shield the opening 101. In this embodiment, the direction perpendicular to the bottom of the plasma processing device is the X-axis direction.

[0053] The stopper 50 is installed between the bushing 10 and the shielding plate 20 , and is configured to limit the shielding plate 20 when the shielding plate 20 blocks the opening 101 , so that the shielding plate 20 and the bushing 10 have a preset gap in the lifting direction of the shielding plate 20 .

[0054] In some examples, the plasma processing device also includes a cavity 60 and a cover 70 , which enclose a reaction chamber 601 , in which the sleeve 10 , the baffle plate 20 and the stopper 50 are located, and the driving mechanism 30 is mounted on the cavity 60 or the cover 70 .

[0055] The opening 101 can accommodate the wafer to enter and exit.

[0056] The shielding plate 20 is located between the bushing 10 and the cavity 60, and the driving mechanism 30 is used to achieve the displacement of the shielding plate 20 in a direction perpendicular to the bottom of the plasma processing device, that is, the driving mechanism 30 can achieve the lifting and lowering of the shielding plate 20 in a direction perpendicular to the bottom of the plasma processing device. In some examples, the driving mechanism 30 can be a motor or a cylinder.

[0057] Figure 1 The shielding plate 20 in the middle blocks the opening 101 by rising, and at this time the shielding plate 20 is in a closed state. Figure 3 The shielding plate 20 in the middle opens the opening 101 by descending, and at this time the shielding plate 20 is in an open state.

[0058] The lifting direction of the shielding plate 20 is the X-axis direction. Figure 1 As shown, the shielding plate 20 can be raised to shield the opening 101. Figure 4 As shown, the shielding plate 20 can also shield the opening 101 by descending.

[0059] The contour formed by the shielding plate 20 and the bushing 10 is not specifically set, as long as the shielding plate 20 can shield the opening 101 .

[0060] The plasma processing device is applied to an etching device, and the etching device includes a transfer chamber and a vacuum valve. The chamber 60 of the plasma processing device is provided with an opening (not shown in the figure) for wafer transfer, and the vacuum valve can open or close the opening on the chamber 60. When a wafer needs to be transferred between the reaction chamber 601 and the transfer chamber of the plasma processing device, before the vacuum valve is opened, the shielding plate 20 is controlled to rise by the driving mechanism 30, and the shielding plate 20 shields the opening 101 of the bushing 10. At this time, the shielding plate 20 is in a closed state (see Figure 1 ); open the vacuum valve, and the pollutants in the gas in the reaction chamber 601 or the transmission chamber fall on the shielding plate 20; after a preset time, the shielding plate 20 is controlled to descend by the driving mechanism 30 to open the opening 101, and the shielding plate 20 is in the open state (see Figure 3 As shown), the shielding plate 20 no longer blocks the opening 101 on the side wall of the sleeve 10, and wafer transfer is performed.

[0061] The preset gap is not limited to a regular shape, such as a cube, but may also be an irregular shape, as long as the baffle plate 20 does not contact the bushing 10 in the lifting direction of the baffle plate 20, that is, the baffle plate 20 does not collide with the bushing 10.

[0062] In some examples, in the lifting direction of the shielding plate 20, the surfaces of the shielding plate 20 and the bushing 10 opposite to each other are two parallel planes, which are perpendicular to the lifting direction of the shielding plate 20. The preset gap between the shielding plate 20 and the bushing 10 can be understood as the spacing between the shielding plate 20 and the bushing 10 in the lifting direction of the shielding plate 20 when the shielding plate 20 blocks the opening 101. Exemplarily, when the shielding plate 20 blocks the opening 101, the spacing between the shielding plate 20 and the bushing 10 in the lifting direction of the shielding plate 20 can be preset to 2 mm.

[0063] The plasma processing device provided in the embodiment of the present application controls the baffle plate 20 to block the opening 101 of the sleeve 10 through the driving mechanism 30, and the stopper 50 limits the baffle plate 20, so that in the lifting direction of the baffle plate 20, there is a preset gap between the baffle plate 20 and the sleeve 10, so that during the lifting process of the baffle plate 20, the baffle plate 20 does not contact the sleeve 10, avoiding the collision of the baffle plate 20 and the sleeve 10 during the lifting process of the baffle plate 20, thereby ensuring the functions of the components of the plasma processing device and reducing the pollutants in the reaction space of the plasma processing device. Specifically, the baffle plate 20 does not collide with the sleeve 10, so that the baffle plate 20 will not be damaged and the coating of the baffle plate 20 will not be damaged, the sleeve 10 will not be damaged and the coating of the sleeve 10 will not be damaged, the cavity 60 will not be damaged and the coating of the cavity 60 will not be damaged, thereby ensuring the functions of the baffle plate 20, the sleeve 10 and the cavity 60, and reducing the types of pollutants and the amount of pollutants.

[0064] In a possible implementation, Figure 3 As shown, the shielding plate 20 has a stop surface 201 , and the bushing 10 has a matching surface 102 . The stop surface 201 and the matching surface 102 are arranged opposite to each other in the lifting direction of the shielding plate 20 , and the stop member 50 is fixed on the stop surface 201 and / or the matching surface 102 .

[0065] The stopper 50 applies a force to the shielding plate 20 so that a preset gap exists between the shielding plate 20 and the bushing 10 in the lifting direction of the shielding plate 20. Specifically, when the shielding plate 20 blocks the opening 101, the stopper 50 applies a force to the shielding plate 20 so that the stopper 50 limits the shielding plate 20, so that a preset gap exists between the shielding plate 20 and the bushing 10 in the lifting direction of the shielding plate 20.

[0066] The stopper 50 is, but not limited to, a magnetic member, an elastic member, etc.

[0067] The stopper 50 can be fixed on the mating surface 102 of the bushing 10. In some examples, the stopper 50 is an elastic member, and the type of the elastic member can be selected according to actual design requirements, for example, the elastic member is a gas spring or an elastic pin. The elastic member is fixed on the mating surface 102 of the bushing 10. When the baffle plate 20 blocks the opening 101, the stopper surface 201 of the baffle plate 20 contacts the elastic member and compresses the elastic member, and the elastic member applies an elastic force to the baffle plate 20. In other examples, the stopper 50 is a magnetic member, which can be a magnet. The stopper 50 is fixed on the mating surface 102 of the bushing 10, and the stopper surface 201 of the baffle plate 20 is a magnetic surface. The force of the stopper 50 on the stopper surface 201 of the baffle plate 20 is a repulsive force. When the baffle plate 20 blocks the opening 101, the stopper 50 applies a repulsive force to the baffle plate 20.

[0068] The stopper 50 may be fixed on the stop surface 201 of the shielding plate 20. In some examples, the stopper 50 is an elastic member, which is fixed on the stop surface 201 of the shielding plate 20. When the shielding plate 20 blocks the opening 101, the mating surface 102 of the bushing 10 contacts the elastic member and compresses the elastic member, and the elastic member applies elastic force to the shielding plate 20.

[0069] The stopper 50 can also be fixed on the stop surface 201 of the shielding plate 20 and the mating surface 102 of the bushing 10. The stopper 50 can be composed of two separable parts, and the two parts are respectively fixed on the stop surface 201 of the shielding plate 20 and the mating surface 102 of the bushing 10. In some examples, the stopper 50 is a magnetic part, and the magnetic part includes two magnets, one magnet is fixed on the stop surface 201 of the shielding plate 20, and the other magnet is fixed on the mating surface 102 of the bushing 10. The force between the two magnets is a repulsive force. When the shielding plate 20 blocks the opening 101, the repulsive force between the two magnets applies a force to the shielding plate 20.

[0070] In a possible implementation, Figure 3 As shown, the shielding plate 20 has a first end 20a and a second end 20b, the first end 20a and the second end 20b are arranged opposite to each other in the lifting direction of the shielding plate 20, the first end 20a is connected to the driving mechanism 30, and the bushing 10 has a fixed end 103 (see Figure 2 As shown), the fixed end 103 and the second end 20b are arranged opposite to each other in the lifting direction of the shielding plate 20, and the fixed end 103 is provided with a fixing surface.

[0071] The driving mechanism 30 can control the shielding plate 20 to rise or fall by driving the first end 20a of the shielding plate 20.

[0072] When the shielding plate 20 blocks the opening 101, the gap between the second end 20b and the fixed surface is a preset gap. In this way, during the lifting process of the shielding plate 20, the second end 20b of the shielding plate 20 does not contact the fixed end 103 of the bushing 10, thereby preventing the second end 20b of the shielding plate 20 from colliding with the fixed end 103 of the bushing 10 during the lifting process of the shielding plate 20, thereby ensuring the functions of the components of the plasma processing device and reducing the pollutants in the reaction space of the plasma processing device.

[0073] The end surface of the second end 20b can be but is not limited to a flat surface, a curved surface, a bent surface, etc.

[0074] The shape of the end surface of the fixed end 103 is the same as the shape of the end surface of the second end 20b, so that the end surface of the fixed end 103 matches the end surface of the second end 20b. Exemplarily, the end surface of the fixed end 103 and the end surface of the second end 20b are both planes.

[0075] The fixing surface is a portion of the end surface of the fixing end 103 .

[0076] Exemplarily, the plasma processing device further includes an upper electrode 81 and a lower electrode 82, which are arranged opposite to each other in the X-axis direction. The reaction gas in the reaction chamber 601 is excited into plasma under the action of the upper electrode 81 and the lower electrode 82.

[0077] In a possible implementation, the plasma processing device further includes a conductive spiral tube 40, which is disposed between the shielding plate 20 and the bushing 10, and is located in the reaction chamber 601. When the shielding plate 20 blocks the opening 101, the stopper 50 limits the shielding plate 20, so that the compression amount of the conductive spiral tube 40 between the shielding plate 20 and the bushing 10 in the lifting direction of the shielding plate 20 is a preset compression amount. In this way, when the shielding plate 20 blocks the opening 101, the electrical continuity between the shielding plate 20 and the bushing 10 can be ensured.

[0078] Optionally, the conductive spiral tube 40 may be disposed between the fixed end 103 and the second end 20b to maintain electrical continuity between the shielding plate 20 and the bushing 10. The conductive spiral tube 40 may be fixed to the fixed surface of the fixed end 103 or to the second end 20b.

[0079] The conductive spiral tube 40 may also be disposed between the stop surface 201 and the mating surface 102 to maintain electrical continuity between the shielding plate 20 and the bushing 10. The conductive spiral tube 40 may be fixed to the stop surface 201 or the mating surface 102.

[0080] Optionally, the conductive spiral tube 40 is fixed on the bushing 10. In some examples, the conductive spiral tube 40 is embedded in the bushing 10. When the conductive spiral tube 40 contacts the shielding plate 20, the shielding plate 20 and the bushing 10 can be electrically connected.

[0081] When the shielding plate 20 blocks the opening 101 , the compression amount of the conductive spiral tube 40 between the shielding plate 20 and the bushing 10 can be preset, and the value of the compression amount is set based on the condition that the electrical continuity between the shielding plate 20 and the bushing 10 can be maintained.

[0082] The compression amount of the conductive spiral tube 40 between the shielding plate 20 and the bushing 10 can be understood as the difference between the length of the conductive spiral tube 40 before compression and the length of the conductive spiral tube 40 after compression in the lifting direction of the shielding plate 20. In some examples, the preset compression amount of the conductive spiral tube 40 between the shielding plate 20 and the bushing 10 is 1 mm.

[0083] In one example, when the baffle plate 20 blocks the opening 101, the conductive spiral tube 40 conducts electricity between the baffle plate 20 and the bushing 10, and the conductive spiral tube 40 blocks the preset gap so that the projection of the conductive spiral tube 40 on the opening 101 covers part of the opening 101, thereby forming an enclosed space between the bushing 10 and the baffle plate 20, the upper electrode 81 and the lower electrode 82, so that the plasma in the reaction chamber 601 remains uniform.

[0084] In a possible implementation, Figures 1 to 3 As shown, the driving mechanism 30 is located at the bottom of the cavity 60 , the driving mechanism 30 is installed on the cavity 60 , and the driving mechanism 30 is connected below the shielding plate 20 .

[0085] The driving mechanism 30 may be a cylinder connected below the shielding plate 20. The cylinder drives the shielding plate 20 so that the shielding plate 20 can move between a first height position and a second height position, wherein the first height is greater than the second height.

[0086] For example, in Figure 1 In the X-axis direction, the height of the shielding plate 20 relative to the bottom of the cavity 60 is a first height; Figure 3 In the X-axis direction, the height of the shielding plate 20 relative to the bottom of the cavity 60 is the second height.

[0087] like Figure 1 As shown, the shielding plate 20 moves toward the top of the cavity 60, that is, the shielding plate 20 rises along the +X axis direction, and the shielding plate 20 moves to a first height to block the opening 101, so that the shielding plate 20 is in a closed state; Figure 3As shown, the shielding plate 20 moves toward the bottom of the cavity 60, that is, the shielding plate 20 descends along the -X axis direction, and the shielding plate 20 moves to a second height to open the opening 101, so that the shielding plate 20 is in an open state.

[0088] like Figure 3 As shown, the first end 20a of the shielding plate 20 is provided with a boss 202, and the stop surface 201 is provided on the boss 202. The matching surface 102 of the bushing 10 is provided at the bottom of the bushing 10.

[0089] In some examples, the drive mechanism 30 is a cylinder. Figure 1 and Figure 2 As shown, when the shielding plate 20 blocks the opening 101, that is, when the shielding plate 20 is at the first height, the sum of the elastic force of the conductive spiral tube 40, the force of the stopper 50 on the shielding plate 20, the gravity of the piston rod of the cylinder and the gravity of the shielding plate 20 is equal to the sum of the thrust of the cylinder and a standard atmospheric pressure. In this way, the conductive spiral tube 40, the stopper 50, the shielding plate 20 and the cylinder can be balanced, the compression amount of the conductive spiral tube 40 can be ensured, the conductive spiral tube 40 can be stabilized, and the gap between the shielding plate 20 and the bushing 10 can be ensured, so that the shielding plate 20 and the bushing 10 do not contact each other in the lifting direction of the shielding plate 20 and remain stable.

[0090] It should be noted that the standard atmospheric pressure mentioned in the present application is a standard atmospheric pressure of the environment in which the etching equipment is located.

[0091] Exemplarily, the stopper 50 is an elastic member. Figure 1 and Figure 2 As shown, when the shielding plate 20 blocks the opening 101, that is, when the shielding plate 20 is at a first height, the sum of the elastic force of the conductive spiral tube 40, the elastic force of the stop member 50 on the shielding plate 20, the gravity of the piston rod of the cylinder and the gravity of the shielding plate 20 is equal to the sum of the thrust of the cylinder and one standard atmospheric pressure.

[0092] It should be noted that when the compression amount of the conductive spiral tube 40 between the shielding plate 20 and the bushing 10 is the preset compression amount, the elastic force of the conductive spiral tube 40 corresponding to the conductive spiral tube 40 with different elastic coefficients is also different. The thrust of the cylinder corresponding to the cylinder with different cylinder diameters is also different.

[0093] When the elastic coefficient of the conductive spiral tube 40 changes and the cylinder diameter changes, the elastic coefficient of the stopper 50 is adjusted to control the elastic force of the stopper 50 on the shielding plate 20, constrain the compression amount of the conductive spiral tube 40, and control the gap between the shielding plate 20 and the bushing 10, so as to achieve the gap between the shielding plate 20 and the bushing 10 as a preset gap and the compression amount of the conductive spiral tube 40 as a preset compression amount. It can be understood that the stopper 50 with different elastic coefficients can be adapted to the conductive spiral tube 40 with different elastic coefficients and the cylinder with different cylinder diameters. Among them, the selection of the elastic coefficient of the stopper 50 can be determined according to the size of the elastic coefficient of the conductive spiral tube 40 and the size of the cylinder diameter.

[0094] Exemplarily, when the elastic coefficient of the conductive spiral tube 40 increases and the cylinder diameter increases, the elastic coefficient of the stop member 50 also increases to control the elastic force of the stop member 50 on the baffle plate 20, constrain the compression amount of the conductive spiral tube 40, and control the gap between the baffle plate 20 and the bushing 10.

[0095] When the preset compression amount changes and the preset gap changes, the elasticity coefficient of the stop member 50 is adjusted to control the elastic force of the stop member 50 on the baffle plate 20, adjust the compression amount of the conductive spiral tube 40, and adjust the gap between the baffle plate 20 and the bushing 10, so that the gap between the baffle plate 20 and the bushing 10 is the changed preset gap and the compression amount of the conductive spiral tube 40 is the changed preset compression amount. It can be understood that the stop members 50 with different elasticity coefficients can correspond to different preset compression amounts and different preset gaps, thereby making the stop member 50 flexible and adjustable, thereby enhancing its applicability to different application scenarios.

[0096] Figure 4 The shielding plate 20 in the middle blocks the opening 101 by descending, and at this time the shielding plate 20 is in a closed state. Figure 6 The shielding plate 20 in the middle opens the opening 101 by rising, and at this time the shielding plate 20 is in an open state.

[0097] In a possible implementation, Figures 4 to 6 As shown, the driving mechanism 30 is located at the top of the cavity 60 , the driving mechanism 30 is mounted on the cover 70 , and the driving mechanism 30 is connected above the shielding plate 20 .

[0098] The driving mechanism 30 may be a cylinder connected above the shielding plate 20. The cylinder drives the shielding plate 20 so that the shielding plate 20 can move between a first height position and a second height position, wherein the first height is greater than the second height.

[0099] For example, in Figure 4In the X-axis direction, the height of the shielding plate 20 relative to the bottom of the cavity 60 is the second height; Figure 6 In the X-axis direction, the height of the shielding plate 20 relative to the bottom of the cavity 60 is a first height.

[0100] like Figure 4 As shown, the shielding plate 20 moves toward the bottom of the cavity 60, that is, the shielding plate 20 descends along the -X axis direction, and the shielding plate 20 moves to the second height to block the opening 101, so that the shielding plate 20 is in a closed state; Figure 6 As shown, the shielding plate 20 moves toward the top of the cavity 60, that is, the shielding plate 20 rises toward the +X axis direction, and the shielding plate 20 moves to a first height to open the opening 101, so that the shielding plate 20 is in an open state.

[0101] like Figure 6 As shown, the stop surface 201 is a portion of the end surface of the second end 20b.

[0102] like Figure 6 As shown, the mating surface 102 of the bushing 10 is a part of the end surface of the fixed end 103 , the fixed surface and the mating surface 102 are located on the opening 101 , and in the lifting direction of the shielding plate 20 , the mating surface 102 is higher than the fixed surface.

[0103] like Figure 4 and Figure 5 As shown, when the shielding plate 20 blocks the opening 101, that is, when the shielding plate 20 is at the second height, the sum of the elastic force of the conductive spiral tube 40 and the force of the stopper 50 on the shielding plate 20 is equal to the sum of the thrust of the cylinder, one standard atmospheric pressure, the gravity of the piston rod of the cylinder and the gravity of the shielding plate 20. In this way, the conductive spiral tube 40, the stopper 50, the shielding plate 20 and the cylinder can be balanced, the compression amount of the conductive spiral tube 40 can be ensured, the conductive spiral tube 40 can be stabilized, and the gap between the shielding plate 20 and the bushing 10 can be ensured, so that the shielding plate 20 and the bushing 10 do not contact each other in the lifting direction of the shielding plate 20 and remain stable.

[0104] In some examples, the stopper 50 is an elastic member. Figure 4 and Figure 5 As shown, when the baffle plate 20 blocks the opening 101, that is, when the baffle plate 20 is at the second height, the sum of the elastic force of the conductive spiral tube 40 and the elastic force of the stop member 50 on the baffle plate 20 is equal to the sum of the thrust of the cylinder, one standard atmospheric pressure, the gravity of the piston rod of the cylinder and the gravity of the baffle plate 20.

[0105] When the compression amount of the conductive spiral tube 40 between the shielding plate 20 and the bushing 10 is a preset compression amount, the elastic forces of the conductive spiral tube 40 corresponding to the conductive spiral tube 40 with different elastic coefficients are also different.

[0106] Cylinders with different cylinder diameters have different corresponding thrusts.

[0107] When the elastic coefficient of the conductive spiral tube 40 changes and the cylinder diameter changes, the elastic coefficient of the stop member 50 is adjusted to control the elastic force of the stop member 50 on the baffle plate 20, thereby constraining the compression amount of the conductive spiral tube 40 and the gap between the baffle plate 20 and the bushing 10, so that the gap between the baffle plate 20 and the bushing 10 is a preset gap and the compression amount of the conductive spiral tube 40 is a preset compression amount. It can be understood that the stop members 50 with different elastic coefficients can adapt to conductive spiral tubes 40 with different elastic coefficients and cylinders with different diameters.

[0108] When the preset compression amount changes and the preset gap changes, the elasticity coefficient of the stop member 50 is adjusted to control the elastic force of the stop member 50 on the baffle plate 20, adjust the compression amount of the conductive spiral tube 40, and adjust the gap between the baffle plate 20 and the bushing 10, so that the gap between the baffle plate 20 and the bushing 10 is the changed preset gap and the compression amount of the conductive spiral tube 40 is the changed preset compression amount. It can be understood that the stop members 50 with different elasticity coefficients can correspond to different preset compression amounts and different preset gaps, thereby making the stop member 50 flexible and adjustable, thereby enhancing its applicability to different application scenarios.

[0109] An embodiment of the present application provides an etching device, including a transmission chamber and a plasma processing device; a wafer can be transferred between the plasma processing device and the transmission chamber.

[0110] Among them, the plasma processing device in this embodiment has the same structure as the plasma processing device provided in any of the above embodiments, and can bring the same or similar technical effects, which will not be described one by one here, and the details can be referred to the description of the above embodiments.

[0111] Etching equipment can not only be used for a variety of conductor etching processes, such as shallow trench isolation etching and polysilicon gate etching; it can also be used for dielectric etching, such as spacer etching, mask etching, back etching, etc.

[0112] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A plasma processing device, characterized in that: It includes a bushing, a shielding plate, a driving mechanism and a stopper; The side wall of the bushing has an opening, the shielding plate is connected to the driving mechanism, and the driving mechanism is used to control the shielding plate to rise or fall along a direction perpendicular to the bottom of the plasma processing device to shield the opening; The stopper is installed between the bushing and the shielding plate, and is configured to limit the shielding plate when the shielding plate blocks the opening, so that a preset gap exists between the shielding plate and the bushing in the lifting direction of the shielding plate.

2. The plasma processing device according to claim 1, characterized in that: The shielding plate has a stop surface, the bushing has a matching surface, the stop surface and the matching surface are arranged opposite to each other in the lifting direction of the shielding plate, and the stop member is fixed on the stop surface and / or the matching surface.

3. The plasma processing device according to claim 1, characterized in that: The stopper is a magnetic member or an elastic member.

4. The plasma processing device according to claim 1, characterized in that: The shielding plate has a first end and a second end, the first end and the second end are arranged opposite to each other in the lifting direction of the shielding plate, the first end is connected to the driving mechanism, the bushing has a fixed end, the fixed end and the second end are arranged opposite to each other in the lifting direction of the shielding plate, and the fixed end is provided with a fixing surface; When the shielding plate shields the opening, the gap between the second end and the fixing surface is the preset gap.

5. The plasma processing device according to claim 4, characterized in that: A conductive spiral tube is fixed on the fixing surface of the bushing or the second end of the shielding plate. When the shielding plate blocks the opening, the compression amount of the conductive spiral tube between the shielding plate and the bushing is a preset compression amount, and the conductive spiral tube blocks the preset gap.

6. The plasma processing device according to any one of claims 2 to 5, characterized in that: It also includes a cavity and a cover, wherein the cavity and the cover form a reaction chamber, the bushing, the shielding plate and the stopper are located in the reaction chamber, and the driving mechanism is installed on the cavity or the cover.

7. The plasma processing device according to claim 6, characterized in that: The driving mechanism is installed on the cavity and is located at the bottom of the cavity. The driving mechanism is connected below the shielding plate. The shielding plate moves toward the top of the cavity to shield the opening. or The driving mechanism is installed on the covering member, the covering member is located at the top of the cavity, the driving mechanism is connected above the shielding plate, and the shielding plate moves toward the bottom of the cavity to shield the opening.

8. The plasma processing device according to claim 7, characterized in that: The driving mechanism is a motor or a cylinder.

9. The plasma processing device according to claim 8, characterized in that: The driving mechanism is a cylinder; Wherein, when the cylinder is connected below the shielding plate, the sum of the elastic force of the conductive spiral tube, the force of the stopper on the shielding plate, the gravity of the piston rod of the cylinder and the gravity of the shielding plate is equal to the sum of the thrust of the cylinder and one standard atmospheric pressure; or, When the cylinder is connected above the shielding plate, the sum of the elastic force of the conductive spiral tube and the force of the stop member on the shielding plate is equal to the sum of the thrust of the cylinder, one standard atmospheric pressure, the gravity of the piston rod of the cylinder and the gravity of the shielding plate.

10. An etching device, characterized in that: A plasma processing device comprising a transmission chamber and any one of claims 1 to 9; Wafers are transferred between the plasma processing device and the transfer chamber.

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