Wafer bearing device and transmission device

Abstract

The invention relates to the technical field of semiconductors, and provides a wafer bearing device and a transmission device.The wafer bearing device comprises a bearing body and a sensing assembly; the bearing main body comprises a main bearing surface, and the main bearing surface is used for bearing a wafer; the sensing assembly is arranged on the bearing main body, the sensing assembly is provided with a head part, and the head part is used for emitting a light beam to form a trajectory and receiving reflected light; the bearing main body is provided with a first reference line; the first reference line is configured as follows: when the wafer is carried on the main bearing surface, the first reference line coincides with the central axis of the wafer; the trajectory does not pass through the first reference line. The light beam emission track of the wafer bearing device avoids the notch position of the wafer, so that the receiving intensity of the reflected light of the light beam is ensured, and the wafer in-situ detection precision is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a wafer carrying device and a transmission device. Background Art

[0002] Wafer transfer devices are mainly used in the integrated circuit manufacturing process to accurately, quickly and stably transfer and position wafers between various process modules.

[0003] The common wafer transfer structures in existing wafer transfer devices generally include a vacuum adsorption type wafer fork structure and a load-bearing structure.

[0004] The vacuum adsorption fork structure is suitable for wafers at room temperature or with larger thickness. In the wafer manufacturing process, some processes require the wafer to be heated before transmission, and the metal ions required after heating the wafer are higher; therefore, the vacuum adsorption fork structure is more limited by vacuum and Bernoulli effect; especially when the wafer thickness is small, the vacuum adsorption fork structure will produce adsorption marks on the thin wafer during the transmission process.

[0005] Therefore, in the process of heating the wafer and then transferring it, the structure for transferring the wafer generally adopts a load-bearing structure. The load-bearing structure is used to carry and transfer the wafer. The load-bearing structure is generally also equipped with an in-situ detection function. The principle is to transmit a light beam and receive reflected light, and determine whether the wafer on the load-bearing structure is in place by the intensity of the light beam reflection reception. When the receiving intensity is greater than the threshold, it is considered that the wafer on the load-bearing structure is in place. When the receiving intensity is not greater than the threshold, it is considered that the wafer on the load-bearing structure is not in place.

[0006] Since the emitted light beam is scattered light, when the wafer is on a supporting structure, how to ensure that the received intensity of the reflected light is greater than the threshold is the core of detecting the wafer in-position accuracy.

[0007] In the process of heating the wafer and then transferring it, the wafer will be warped due to the heat, which will cause the position of the light beam on the wafer to change. When the warping deformation is large, it may even cause the light beam to fail to hit the wafer, which will cause the intensity of the received reflected light to weaken, increasing the possibility of misjudgment. In addition, when the wafer is placed on a load-bearing structure, there may be a condition where the wafer notch is facing the light beam, which will also cause the direction of the reflected light to change, resulting in deviations in the in-situ measurement.

[0008] Therefore, the present invention requires a wafer carrying device and a transmission device, which improve the wafer in-situ detection accuracy by partially improving the wafer carrying device. Summary of the invention

[0009] The invention provides a wafer carrying device and a transmission device. By partially improving the wafer carrying device, on the one hand, the receiving intensity of the reflected light of the light beam is guaranteed when the wafer is in place, and on the other hand, it is also beneficial for the light beam to avoid the position of larger thermal warping deformation to ensure that the light beam is reliably irradiated on the outer peripheral wall of the wafer.

[0010] In the present invention, the wafer carrying device comprises: a carrying body and a sensor component;

[0011] The carrying body includes a main carrying surface, which is used to carry a wafer; the sensor component is arranged on the carrying body, and the sensor component has a head, which is used to emit a light beam to form a trajectory line and receive reflected light; the carrying body has a first reference line; the first reference line is configured as follows: when the wafer is carried on the main carrying surface, the first reference line coincides with the central axis of the wafer; the trajectory line does not pass through the first reference line.

[0012] Through the above-mentioned wafer carrying device, the light beam emission trajectory of the sensor component does not pass through the central axis of the wafer, so that when the wafer is carried in a conventional manner, the light beam emission trajectory avoids the notch position of the wafer to avoid the phenomenon that the direction of the reflected light is widely offset when the light beam is irradiated on the notch, which is beneficial to improve the intensity of the reflected light when the light beam is irradiated on the wafer and reduce the deviation of in-situ detection. In addition, since the edge of the notch has a sharp structure, stress concentration is likely to occur here, and the position of the notch is also prone to large warping deformation during the heating process. When the warping deformation at this position is large, it is very likely that the light beam cannot be irradiated on the outer peripheral wall of the wafer. Therefore, the light beam emission trajectory avoids the notch position of the wafer, not only avoiding the irregular surface of the notch, but also avoiding the position on the wafer that may produce large warping deformation. On the one hand, it ensures the receiving intensity of the reflected light of the light beam when the wafer is in place, and on the other hand, it is also beneficial to make the light beam avoid the position of large thermal warping deformation to ensure that the light beam is reliably irradiated on the outer peripheral wall of the wafer.

[0013] Optionally, the distance between the track line and the main bearing surface is half the thickness of the wafer.

[0014] Optionally, the distance between the trajectory line and the first reference line is 3 mm-20 mm.

[0015] Optionally, an avoidance groove is provided on the bearing body, and the avoidance groove passes through to the main bearing surface.

[0016] Optionally, the bearing body includes a bearing portion and a connecting arm, and the avoidance groove extends from the bearing portion to the connecting arm.

[0017] Optionally, a mounting groove is provided on the bearing body, and the head is located in the mounting groove.

[0018] Optionally, at least a portion of the mounting groove is a dovetail groove, and at least a portion of the head is clamped in the dovetail groove.

[0019] Optionally, the supporting body also includes a first auxiliary supporting surface parallel to the main supporting surface, the first auxiliary supporting surface has a height difference with the main supporting surface, and the first auxiliary supporting surface is higher than the main supporting surface, and there is a main retaining edge between the main supporting surface and the first auxiliary supporting surface that is adapted to the outer peripheral wall of the wafer.

[0020] Optionally, the supporting body also includes a second auxiliary supporting surface parallel to the main supporting surface, the second auxiliary supporting surface has a height difference with the main supporting surface, and the second auxiliary supporting surface is lower than the main supporting surface, and the main supporting surface is located between the first auxiliary supporting surface and the second auxiliary supporting surface.

[0021] Optionally, a first auxiliary rib is provided at an edge of the first auxiliary bearing surface.

[0022] Optionally, the main rib is connected to the main bearing surface in an arc-shaped transition.

[0023] Optionally, the wafer carrying device further comprises a plurality of supporting protrusions, wherein the supporting protrusions are arranged on the second auxiliary carrying surface, and one end of the supporting protrusions is used to support the wafer placed on the main carrying surface, and the end is coplanar with the main carrying surface.

[0024] Optionally, the bearing body includes a bearing portion and a connecting arm, the connecting arm is connected to the bearing portion, the main bearing surface is arranged on the bearing portion, and the sensor component is arranged on the connecting arm.

[0025] Optionally, when the bearing body is provided with the mounting groove, the mounting groove is located on the connecting arm, and one end of the mounting groove along the length direction thereof passes through to the bearing part.

[0026] Optionally, when the bearing body is provided with the avoidance groove, at least a portion of the avoidance groove is located on the bearing portion and at least a portion of the avoidance groove is located on the connecting arm.

[0027] The present invention also provides a wafer transmission device, in which the wafer transmission device is provided with the above-mentioned wafer carrying device.

[0028] To summarize, the wafer carrying device includes: a carrying body and a sensor component; the carrying body includes a main carrying surface, and the main carrying surface is used to carry the wafer; the sensor component is arranged on the carrying body, and the sensor component has a head, and the head is used to emit a light beam and receive reflected light; the trajectory line of the light beam emitted by the head is parallel to the main carrying surface; the carrying body has a first reference line; the first reference line is configured as follows: when the wafer is carried on the main carrying surface and is centered, the first reference line coincides with the central axis of the wafer; the trajectory line does not pass through the first reference line.

[0029] With such configuration, through the above-mentioned wafer carrying device, the light beam emission trajectory of the sensor component does not pass through the central axis of the wafer, so that when the wafer is carried in a conventional manner (the notch of the wafer faces the connecting arm), the light beam emission trajectory avoids the notch position of the wafer to avoid the phenomenon that the direction of the reflected light is widely offset when the light beam is irradiated on the notch, which is conducive to improving the intensity of the reflected light when the light beam is irradiated on the wafer and reducing the deviation of in-situ detection. In addition, since the edge of the notch has a sharp structure, stress concentration is likely to occur here, and the position of the notch is also prone to large warping deformation during the heating process. When the warping deformation at this position is large, it is very likely that the light beam cannot be irradiated on the outer peripheral wall of the wafer. Therefore, the light beam emission trajectory avoids the notch position of the wafer, not only avoiding the irregular surface of the notch, but also avoiding the position on the wafer that may produce large warping deformation. On the one hand, it ensures the receiving intensity of the reflected light of the light beam when the wafer is in place, and on the other hand, it is also conducive to making the light beam avoid the position of large thermal warping deformation to ensure that the light beam is reliably irradiated on the outer peripheral wall of the wafer.

[0030] The light beam emission track of the sensor component is directly opposite to the center of the thickness of the wafer placed on the carrier. When the wafer is at room temperature, it has no thermal warpage or a small amount of warpage. At this time, the light beam emitted by the head just hits the center of the thickness of the wafer, and the wafer's in-situ status can be reliably detected. When the wafer is heated and in a high temperature state, its thermal warpage is large. The setting method of the track line directly opposite to the center of the wafer thickness allows the light beam to be irradiated at the outer wall of the wafer even when the wafer has a large warpage, so as to reduce the probability of misjudgment due to warpage and improve the reliability and accuracy of in-situ detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 This is a schematic diagram of wafer transportation;

[0032] Figure 2 A schematic diagram of a partial structure of a wafer carrying device according to an embodiment of the present invention;

[0033] Figure 3A partial cross-sectional structural schematic diagram of a wafer carrying device according to an embodiment of the present invention;

[0034] Figure 4 It is a structural schematic diagram of a wafer carrying device carrying a wafer according to an embodiment of the present invention;

[0035] Figure 5 It is a schematic diagram of the structure of the carrying surface of a wafer carrying device according to an embodiment of the present invention.

[0036] The reference numerals are as follows:

[0037] 10- bearing body; 101- bearing part; 1011- bearing support arm; 102- connecting arm;

[0038] 11-main bearing surface; 12-avoidance groove; 13-installation groove; 14-support protrusion; 15-first auxiliary bearing surface; 16-main rib; 17-second auxiliary bearing surface; 18-first auxiliary rib;

[0039] 20-sensing component; 21-head;

[0040] 30-wafer; 31-notch;

[0041] a-trajectory line; b-first reference line; c-second reference line. DETAILED DESCRIPTION

[0042] As used in the invention, the singular forms "one", "a", and "the" include plural objects, the term "or" is usually used to include the meaning of "and / or", the term "several" is usually used to include the meaning of "at least one", and the term "at least two" is usually used to include the meaning of "two or more". In addition, the terms "first", "second", and "third" are used only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first", "second", and "third" can explicitly or implicitly include one or at least two of the features. In addition, as used in the invention, "installed", "connected", "connected", and one element "set" to another element should be understood in a broad sense, usually only indicating that there is a connection, coupling, matching or transmission relationship between the two elements, and the connection, coupling, matching or transmission between the two elements can be direct or indirect through an intermediate element, and cannot be understood as indicating or implying the spatial position relationship between the two elements, that is, one element can be in any orientation such as inside, outside, above, below or on one side of another element, unless the content clearly indicates otherwise. For those skilled in the art, the specific meanings of the above terms in the invention can be understood according to specific circumstances. In addition, directional terms such as above, below, up, down, upward, downward, left, right, etc. are used with respect to the exemplary embodiments as they are shown in the figures, with the upward or upper direction toward the top of the corresponding figure, and the downward or lower direction toward the bottom of the corresponding figure.

[0043] Please refer to Figure 1 , which is a schematic diagram of wafer conveying of a transmission device;

[0044] The starting position of the wafer is located in the wafer storage unit. The transmission device takes the wafer out of the wafer storage unit and transfers it to the wafer heating device to perform wafer heating. After the heating is completed, the transmission device transfers the high-temperature wafer to the wafer processing equipment for process processing; after the processing is completed, the wafer is transported to the wafer storage unit through the transmission device.

[0045] At this time, the transfer device needs to transfer both normal temperature wafers and high temperature wafers. Therefore, the wafer transfer device needs to be compatible with wafer transfer conditions under normal temperature and high temperature conditions.

[0046] In the high-temperature wafer transmission scenario, due to the high temperature and the slot spacing of the wafer storage unit, it is impossible to set a position sensor attached to the wafer carrier on its carrying surface, and a horizontal position sensor is required. The existing carrier is easily affected by heat conduction during installation and long-term use, which can easily lead to product deviation in the sensor measurement direction, making it impossible to accurately measure whether the wafer is in place.

[0047] When the wafer is carried at a certain rotation angle, the existing carrying device may have a situation where the notch of the wafer faces the in-situ sensor, resulting in deviation in the in-situ measurement.

[0048] Since the measuring light beam emitted by the in-situ sensor has a certain divergence angle, when the existing carrying device does not carry a wafer, part of the light will be irradiated onto the carrying surface of the carrying device and reflected and received, which will cause measurement errors.

[0049] In the present embodiment, a wafer carrying device suitable for wafer transfer conditions under normal temperature and high temperature conditions is provided. The wafer carrying device is applied to a wafer transmission device to carry wafers, and the wafer carrying device is in direct contact with the wafer.

[0050] Please refer to Figure 2 As shown, this embodiment provides a wafer transmission device, in which a wafer carrying device is installed. The wafer transmission device can be, for example, a robotic arm, and the wafer carrying device is connected to the execution end of the robotic arm, and the robotic arm drives the wafer carrying device to move to transmit the wafer. The other structures of the wafer transmission device are consistent with the existing structure, and the difference lies in the different structure of the wafer carrying device.

[0051] The wafer carrying device comprises: a carrying body 10 and a sensor component 20;

[0052] The carrying body 10 includes a main carrying surface 11 , and the main carrying surface 11 is used for carrying the wafer 30 .

[0053] Please continue to refer to Figure 2 As shown, the carrier body 10 includes a carrier part 101 and a connecting arm 102, the main carrier surface 11 is arranged on the carrier part 101, and the sensor component 20 is arranged on the connecting arm 102. The connecting arm 102 is connected to the carrier part 101, and the connecting arm 102 is used to connect to the execution end of the wafer transmission device. In addition, the connecting arm 102 and the carrier part 101 form a partition structure, and the carrier part 101 is in direct contact with the heated wafer, which is conducive to ensuring that less heat is conducted to the connecting arm 102, so as to avoid the influence of heat conduction on the detection performance of the sensor component 20.

[0054] Please continue to refer to Figure 2 As shown, the bearing part 101 has two bearing arms 1011, which are connected to each other in a "V" shape, and the connecting arm 102 is integrally connected with the bearing part 101, and the bearing body 10 is in a "Y" shape as a whole. Figure 2 As shown, when the wafer 30 is carried on the carrying portion 101 , a portion of the wafer 30 is carried on the carrying portion 101 , and another portion of the wafer 30 is suspended, so as to facilitate the placement and removal of the wafer 30 .

[0055] In other alternative embodiments, the shape of the carrying portion 101 and the shape of the connecting arm 102 may be adaptively adjusted based on actual usage requirements.

[0056] Please continue to refer to Figure 2 As shown, the sensor component 20 is arranged on the carrier body 10 for emitting a light beam and receiving reflected light. The sensor component 20 includes a head 21 for emitting a light beam and receiving reflected light. The sensor component 20 generally also includes a light beam generator and a transmission cable. The transmission cable is connected to the light outlet of the light beam generator, and the head 21 is connected to the transmission cable. The head 21 integrates the functions of light beam emission and reception. The head 21 is an in-position sensor, which uses the principle of a reflective sensor. The light beam emitting end and the light beam receiving end of the head 21 are in the same position. The emitting end shines the light beam to the object to be measured. When the object to be measured is in the optical path, the light beam will be reflected back and processed by the light beam receiving end. According to the intensity difference of the reflected light received by the light beam receiving end, the existence and position information of the object to be measured can be judged. The higher the intensity of the reflected light, the higher the detection feedback value. The sensor component 20 can use an infrared sensor or other existing equipment, which will not be repeated here.

[0057] Please refer to Figure 2 and Figure 3 As shown, in this embodiment, the head 21 is a cylindrical structure, and the connecting arm 102 is provided with a mounting groove 13, the mounting groove 13 extends along the length direction of the connecting arm 102, and the mounting groove 13 is disposed along one end of the length direction thereof ( Figure 2 The right end of the middle installation groove 13) extends toward the bearing portion 101 and passes through the bearing portion 101, and the other end ( Figure 2 The left end of the middle mounting groove 13) passes through to the end of the connecting arm 102 ( Figure 2 The head 21 can be connected to the left end of the middle connecting arm 102. Figure 2 The left end of the middle mounting groove 13 is inserted into the mounting groove 13, and the end of the head 21 is close to Figure 2 The right end of the middle mounting slot 13 emits a light beam toward the carrying portion 101 .

[0058] The head 21 has the functions of emitting a light beam and receiving reflected light, so the positioning accuracy of the head 21 has a great influence on the detection accuracy of the sensor assembly 20. In this embodiment, a portion of the mounting groove 13 is a dovetail groove, and a portion of the head 21 is clamped in the dovetail groove. Figure 2 Figure 3 As shown, the mounting groove 13 is close to a portion of the bearing portion 101 ( Figure 2 The right end of the mounting groove 13 is a dovetail groove, and the rest of the mounting groove 13 is a rectangular groove. The end of the head 21 ( Figure 2The right end portion of the middle mounting groove 13 is used to emit a light beam and receive reflected light. The end of the head 21 is a cylindrical structure, and its end is installed in the dovetail groove, and the outer peripheral wall of the head 21 fits with the inner wall of the dovetail groove. The dovetail groove is used to center the head 21, and the uniqueness and stability of the fixation of the head 21 are structurally guaranteed to ensure the accuracy of light beam emission and reception, and to ensure that the measurement direction of the head 21 does not deviate during long-term use, so as to accurately measure whether the wafer is in place.

[0059] In other alternative embodiments, the mounting grooves 13 may all be dovetail grooves, and the head 21 may all be installed in the dovetail grooves. Alternatively, the mounting grooves 13 may adjust their shapes based on the actual structure of the head 21 to meet the purpose of positioning the head 21.

[0060] The trajectory line a of the light beam emitted by the head 21 is parallel to the main carrying surface 11 , and the distance between the trajectory line a and the main carrying surface 11 is half the thickness of the wafer.

[0061] The light beam emitted by the head 21 is in a scattered state. The trajectory a here refers to a trajectory corresponding to the main direction of the light beam emitted by the head 21, and the light beam is in a scattered state around the trajectory.

[0062] The head 21 of the existing sensor assembly 20 is relatively small in size, so from a macroscopic perspective, the trajectory a of the light beam emitted by the sensor assembly 20 roughly coincides with the center line of the head 21, so the center line of the head 21 can also be approximately regarded as the trajectory a. In addition, due to the thin thickness of the wafer, it is difficult to accurately guarantee the actual distance between the trajectory a and the main bearing surface 11 during the actual installation process, so the distance between the trajectory a and the main bearing surface 11 is still considered to be within the above distance range within the allowable error range, which is the wafer thickness error of ±10%. That is, when the distance b between the trajectory a and the main bearing surface 11 is b=a±10%a (a is half of the wafer thickness), the distance between the trajectory a and the main bearing surface 11 is considered to be half of the wafer thickness.

[0063] Combination Figure 3 and Figure 4As shown, in this embodiment, the trajectory line a coincides with the center line of the head 21, and by limiting the distance between the trajectory line a and the main bearing surface 11, the trajectory line a is roughly opposite to the center position of the thickness of the wafer 20. When the wafer 20 is at room temperature, it has no thermal warping deformation or the warping deformation is small. At this time, the light beam emitted by the head 21 just hits the center position of the thickness of the wafer 20. When the wafer 20 is heated and is in a high temperature state, the thermal warping deformation is large. The setting method of arranging the trajectory line a opposite to the center of the thickness of the wafer 20 allows the light beam to be irradiated at the outer peripheral wall of the wafer 20 when the wafer 20 has a large warping deformation, so as to reduce the probability of misjudgment caused by warping deformation and improve the reliability and accuracy of in-situ detection.

[0064] The outer wall of the wafer 30 is generally provided with a notch 31, and the notch 31 is used to mark the direction of the wafer 30. During the transportation process of the wafer 30, when the wafer 30 is placed on the main bearing surface 11, the wafer 30 is centered, and the orientation of the notch 31 relative to the bearing body 10 is determined. The existing placement method is usually that the notch 31 is directly opposite to the connecting arm 102. Therefore, in essence, the notch 31 is set toward the head 21, and at this time, the light beam emitted by the head 21 may be irradiated on the notch 31. The existing notch 31 is generally a "V"-shaped notch. When the light beam is irradiated on the notch 31, it is easy to cause the direction of the reflected light to deviate in a large range, resulting in a weakening of the intensity of the reflected light received by the head 21, thereby increasing the probability of misjudgment.

[0065] Please continue to refer to Figure 4 As shown,

[0066] In this embodiment, a first reference line b is drawn on the carrier body 10; the first reference line b is configured such that when the wafer 30 is carried on the main carrying surface 11 and centered, the first reference line b coincides with the central axis of the wafer 30;

[0067] The trajectory line a does not pass through the first reference line b, that is, the trajectory line a does not cross the first reference line b.

[0068] For further explanation, this embodiment further introduces a second reference line c, such as Figure 4 As shown, when the wafer 30 is carried on the main carrying surface 11 and centered, the line connecting the notch 31 of the wafer 30 and the center of the wafer 30 along the radial direction of the wafer 30 is the second reference line c. Here, the line connecting the notch 31 and the center of the wafer 30 generally refers to the line connecting the center position of the notch 31 along the circumference of the wafer and the center of the wafer, that is, the line connecting the tip position of the existing notch 31 and the center of the wafer. Since the size of the notch 31 on the outer wall of the wafer is relatively small, from a macroscopic point of view, the line connecting any position of the notch 31 and the center of the wafer 30 almost coincides. Therefore, based on the actual situation, the line connecting the prominent position of the notch 31 and the center of the wafer 30 can be selected to calibrate the second reference line c.

[0069] In addition, the above definition states that the second reference line c extends along the radial direction of the wafer 30 , so the second reference line c is substantially perpendicular to the central axis of the wafer 30 , that is, the second reference line c is perpendicular to the first reference line b.

[0070] like Figure 4 As shown, in this embodiment, the track line a is parallel to the second reference line c, and the track line a does not pass through the center axis of the wafer (the first reference line b). Therefore, the track line a is substantially horizontally offset in a direction perpendicular to the second reference line c, the purpose of which is to make the track line a avoid the notch 31 as much as possible, so that the light beam emitted by the head 31 hits the smooth outer peripheral wall of the wafer 30.

[0071] The preferred distance between the trajectory line a and the first reference line b is 3 mm to 20 mm. The trajectory line a and the first reference line b are substantially two vertical straight lines in space, and the distance between them is also Figure 4 The distance between the projection of the trajectory line a on the main bearing surface 11 and the projection of the first reference line b on the main bearing surface 11. The distance can be adaptively adjusted based on the size of the notch 31, for example, the distance can be set to 5mm, 10mm, 15mm, etc. When the size of the notch 31 is small, the offset of the trajectory line a can be appropriately reduced, and when the size of the notch 31 is large, the offset of the trajectory line a can be appropriately increased, so that the light beam emitted by the head 31 completely avoids the notch 31.

[0072] In other alternative embodiments, the trajectory line a may not be parallel to the first reference line b. For example, the trajectory line a may be rotated counterclockwise and offset by a certain angle so that the trajectory line a is away from the first reference line b, thereby making the trajectory line a avoid the gap 31.

[0073] Through the above-mentioned wafer carrying device, the light beam emission trajectory of the sensor component 20 is directly opposite to the center position of the thickness of the wafer 30 placed on the carrying body 10. When the wafer 20 is at room temperature, it has no thermal warping deformation or the warping deformation is small. At this time, the light beam emitted by the head 21 just hits the center position of the thickness of the wafer 20, and the in-situ status of the wafer can be reliably detected. When the wafer 20 is in a high temperature state after heating, its thermal warping deformation is large. The setting method of the trajectory a directly opposite to the thickness center of the wafer 20 allows the wafer 20 to have a large warping deformation and still keep the light beam irradiated at the peripheral wall position of the wafer 20, so as to reduce the probability of misjudgment caused by warping deformation and improve the reliability and accuracy of in-situ detection.

[0074] By using the wafer carrying device, the light beam emission trajectory of the sensor assembly does not pass through the center axis of the wafer, so that when the wafer is carried in a conventional manner (such as Figure 4The notch 31 of the wafer shown is facing the connecting arm 102), which is beneficial for the light beam emission trajectory to avoid the notch position of the wafer, so as to avoid the phenomenon that the direction of the reflected light is widely offset when the light beam is irradiated on the notch 31, which is beneficial to improve the intensity of the reflected light when the light beam is irradiated on the wafer and reduce the deviation of in-situ detection. In addition, since the edge of the notch 31 has a sharp structure, stress concentration is likely to occur here, and the position of the notch 31 is also prone to large warping deformation during the heating process. When the warping deformation at this position is large, it is very likely that the light beam will not be able to irradiate the outer wall of the wafer. Therefore, the light beam emission trajectory avoids the notch 31 position of the wafer 30, not only avoiding the special-shaped surface of the notch 31, but also avoiding the position on the wafer that may produce large warping deformation. On the one hand, it ensures the receiving intensity of the reflected light of the light beam when the wafer is in place, and on the other hand, it is also beneficial for the light beam to avoid the position of large thermal warping deformation to ensure that the light beam is reliably irradiated on the outer wall of the wafer.

[0075] Furthermore, the bearing body 10 is provided with an avoidance groove 12, and the avoidance groove 12 passes through the main bearing surface 11. Please continue to refer to Figure 2 As shown, the avoidance groove 12 is a rectangular blind groove, one end of which is an open structure and penetrates the main bearing surface 11. A part of the avoidance groove 12 is opened on the bearing portion 101, and the other part is opened on the connecting arm 102.

[0076] The projection of the trajectory line a on the main bearing surface 11 passes through the avoidance groove 12. This limitation ensures that the light beam irradiated by the head 21 passes through the avoidance groove 12.

[0077] Please continue to refer to Figure 2 As shown, at least a portion of the avoidance groove 12 is located at the bearing portion 101 and at least a portion is located at the connecting arm 102, and the mounting groove 13 is directly connected to the avoidance groove 12. Therefore, when the wafer 30 is carried on the main bearing surface 11 and centered, the projection of the edge of the wafer 30 on the main bearing surface 11 passes through the avoidance groove 12. It is ensured that the light beam irradiated by the head 21 will irradiate the outer peripheral surface of the wafer 30 after passing through the avoidance groove 12.

[0078] Since the measuring light beam emitted by the head 21 has a certain divergence angle, when there is no wafer on the main bearing surface 11, part of the light will irradiate the main bearing surface 11 and be reflected and received, which is easy to cause misjudgment. Therefore, the present invention provides an avoidance groove 12 to avoid the divergent light beam, so that when there is no wafer, the main bearing surface 11 located at the edge of the wafer 10 avoids the reflected light source, reduces the light beam reflection intensity, and reduces the possibility of misjudgment.

[0079] In other alternative embodiments, the avoidance groove 12 may also be configured as a through groove penetrating through the supporting body 10 , and the shape and size of the avoidance groove 12 may be adaptively adjusted based on actual light avoidance requirements.

[0080] Please refer to Figure 2 and Figure 5 As shown, in this embodiment, the main bearing surface 11 is arranged at three positions on the bearing portion 101, including the end portion at the connection position of the two bearing arms 1011 and the end portion of the two bearing arms 1011. The above three positions are also provided with a first auxiliary bearing surface 15 and a second auxiliary bearing surface 17.

[0081] The main bearing surface 11 is located between the first auxiliary bearing surface 15 and the second auxiliary bearing surface 17. The first auxiliary bearing surfaces 15 at the three positions are located on the same large annular surface, the main bearing surfaces 11 at the three positions are located on the same medium annular surface, and the second auxiliary bearing surfaces 17 at the three positions are located on the same small annular surface, wherein the large annular surface, the medium annular surface and the small annular surface are coaxially arranged and the inner diameter and outer diameter of each annular surface are successively smaller.

[0082] The first auxiliary bearing surface 15, the main bearing surface 11 and the second auxiliary bearing surface 17 are parallel to each other. The first auxiliary bearing surface 15, the main bearing surface 11 and the second auxiliary bearing surface 17 have a height difference with each other, and the heights of the first auxiliary bearing surface 15, the main bearing surface 11 and the second auxiliary bearing surface 17 decrease in sequence.

[0083] The main bearing surface 11 is used to bear the wafer 30 and precisely position the wafer, so a main rib 16 adapted to the outer peripheral wall of the wafer 30 is provided between the main bearing surface 11 and the first auxiliary bearing surface 15. When the wafer 30 is placed on the main bearing surface 11, the outer peripheral wall of the wafer 30 is attached to the main rib 16 to position the wafer 30. In order to avoid damaging the outer peripheral wall of the wafer or scratching the surface of the wafer during the movement of the wafer, the main rib is connected to the main bearing surface 11 in an arc transition.

[0084] In addition, the edge of the first auxiliary bearing surface 15 is provided with a first auxiliary rib 18. The first auxiliary rib 18 is also in an arc shape, and its diameter is greater than the outer diameter of the wafer 30. The first auxiliary rib 18 is the edge position of the first auxiliary bearing surface 15, so that the large annular surface formed by the first auxiliary bearing surface 15 has a larger outer diameter.

[0085] The above-mentioned bearing surfaces form a stepped structure. The bearing device includes two wafer taking scenarios in the process of taking wafers. One scenario is to take wafers from a wafer storage unit. In this wafer taking scenario, there is no need to align the wafers, and the wafers can be placed irregularly. Therefore, the wafers can be roughly placed in the bearing area. At this time, the large annular surface formed by the first auxiliary bearing surface 15 has a large bearing area, which can be used to carry scenes with large wafer deviations. For example, a part of the wafer is placed on the first auxiliary bearing surface 15 at the connection position of the two bearing arms 1011, and the other part of the wafer is obliquely supported on the main bearing surface 11 or the second auxiliary bearing surface 17 at the end position of the two bearing arms 1011. Another wafer taking scenario is to take the wafer when the wafer has been pre-aligned. In this scenario, the wafer needs to be centered and carried on the bearing part 101. At this time, the wafer is carried on the main bearing surface 11. After the wafer carrying device carries the wafer, it can meet certain wafer transmission accuracy requirements.

[0086] Please refer to Figure 2 and Figure 5 As shown, the wafer bearing device further includes three supporting protrusions 14, which are cylindrical, one of which is located at the intersection of the two bearing arms 1011, and the other two supporting protrusions 14 are respectively arranged on the two bearing arms 1011. One axial end of the protrusion is integrally formed and connected to the second auxiliary bearing surface 17, and the other end is used to support the wafer 30, and the end is coplanar with the main bearing surface 11. The supporting protrusion 14 is mainly used to support the wafer 30 when the wafer 30 is located on the main bearing surface 11, so as to prevent the middle part of the wafer from bending and deforming due to gravity.

[0087] In other alternative embodiments, more support protrusions 14 may be provided, and the support protrusions 14 may also be provided as a square block structure. The number, shape, setting position and connection method of the support protrusions 14 may be adaptively adjusted based on actual usage requirements.

[0088] In summary, the wafer carrying device includes: the wafer carrying device includes: a carrying body 10 and a sensor component 20; the carrying body 10 includes a main carrying surface 11, and the main carrying surface 11 is used to carry the wafer; the sensor component 20 is arranged on the carrying body 10, and the sensor component 20 has a head 21, and the head 21 is used to emit a light beam and receive reflected light; the trajectory line a of the light beam emitted by the head 21 is parallel to the main carrying surface 11; the carrying body 10 has a first reference line b; the first reference line b is configured as follows: when the wafer 30 is carried on the main carrying surface 11 and is centered, the first reference line b coincides with the central axis of the wafer 30; the trajectory line a does not pass through the first reference line b.

[0089] By using the wafer carrying device, the light beam emission trajectory of the sensor assembly does not pass through the center axis of the wafer, so that when the wafer is carried in a conventional manner (such as Figure 4 The notch 31 of the wafer shown is facing the connecting arm 102), which is beneficial for the light beam emission trajectory to avoid the notch position of the wafer, so as to avoid the phenomenon that the direction of the reflected light is widely offset when the light beam is irradiated on the notch 31, which is beneficial to improve the intensity of the reflected light when the light beam is irradiated on the wafer and reduce the deviation of in-situ detection. In addition, since the edge of the notch 31 has a sharp structure, stress concentration is likely to occur here, and the position of the notch 31 is also prone to large warping deformation during the heating process. When the warping deformation at this position is large, it is very likely that the light beam will not be able to irradiate the outer wall of the wafer. Therefore, the light beam emission trajectory avoids the notch 31 position of the wafer 30, not only avoiding the special-shaped surface of the notch 31, but also avoiding the position on the wafer that may produce large warping deformation. On the one hand, it ensures the receiving intensity of the reflected light of the light beam when the wafer is in place, and on the other hand, it is also beneficial for the light beam to avoid the position of large thermal warping deformation to ensure that the light beam is reliably irradiated on the outer wall of the wafer.

[0090] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0091] The above description is only a description of the preferred embodiments of the invention, and is not intended to limit the scope of the invention. Any changes or modifications made by a person of ordinary skill in the art based on the above disclosure shall fall within the scope of protection of the claims.

Claims

1. A wafer carrying device, characterized in that: include: Carrying body and sensing components; The carrying body comprises a main carrying surface, and the main carrying surface is used for carrying the wafer; The sensor assembly is arranged on the bearing body, and the sensor assembly has a head, and the head is used to emit a light beam to form a trajectory line and receive reflected light; The bearing body has a first reference line; The first reference line is configured such that: when the wafer is carried on the main carrying surface, the first reference line coincides with the central axis of the wafer; The trajectory line does not pass through the first reference line.

2. The wafer carrier device according to claim 1, characterized in that: The distance between the track line and the main bearing surface is half the thickness of the wafer.

3. The wafer carrier device according to claim 1, characterized in that: The distance between the trajectory line and the first reference line is 3 mm-20 mm.

4. The wafer carrier device according to claim 1, characterized in that: The bearing body is provided with an avoidance groove, and the avoidance groove penetrates to the main bearing surface.

5. The wafer carrier device according to claim 4, characterized in that: The bearing body comprises a bearing portion and a connecting arm, and the avoidance groove extends from the bearing portion to the connecting arm.

6. The wafer carrier device according to claim 1, characterized in that: The bearing body is provided with a mounting groove, and the head is located in the mounting groove.

7. The wafer carrier device according to claim 6, characterized in that: At least a portion of the mounting groove is a dovetail groove, and at least a portion of the head is clamped in the dovetail groove.

8. The wafer carrier device according to claim 1, characterized in that: The supporting body also includes a first auxiliary supporting surface parallel to the main supporting surface, the first auxiliary supporting surface has a height difference with the main supporting surface, and the first auxiliary supporting surface is higher than the main supporting surface, and a main retaining edge adapted to the outer peripheral wall of the wafer is provided between the main supporting surface and the first auxiliary supporting surface.

9. The wafer carrier device according to claim 8, characterized in that: The bearing body also includes a second auxiliary bearing surface parallel to the main bearing surface, the second auxiliary bearing surface has a height difference with the main bearing surface, and the second auxiliary bearing surface is lower than the main bearing surface, and the main bearing surface is located between the first auxiliary bearing surface and the second auxiliary bearing surface.

10. The wafer carrier device according to claim 8, characterized in that: The edge of the first auxiliary bearing surface is provided with a first auxiliary rib.

11. The wafer carrier device according to claim 8, characterized in that: The main rib is connected to the main bearing surface in an arc-shaped transition.

12. The wafer carrier device according to claim 9, characterized in that: The wafer carrying device also includes a plurality of supporting protrusions, which are arranged on the second auxiliary carrying surface. One end of the supporting protrusion is used to support the wafer placed on the main carrying surface, and the end is coplanar with the main carrying surface.

13. The wafer carrier device according to any one of claims 1 to 12, characterized in that: The bearing body comprises a bearing part and a connecting arm, the connecting arm is connected to the bearing part, the main bearing surface is arranged on the bearing part, and the sensor component is arranged on the connecting arm.

14. The wafer carrier device according to claim 13, characterized in that: When the bearing body is provided with the mounting groove, the mounting groove is located at the connecting arm, and one end of the mounting groove along the length direction thereof passes through to the bearing part.

15. The wafer carrier device according to claim 13, characterized in that: When the bearing body is provided with the avoidance groove, at least a portion of the avoidance groove is located at the bearing portion and at least a portion of the avoidance groove is located at the connecting arm.

16. A wafer transfer device, characterized in that: The wafer transfer device is provided with a wafer carrying device as described in any one of claims 1 to 15.

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