Transmission method and system for preheated substrate of laser annealing equipment

Abstract

The invention provides a transmission method and system for a preheated substrate of laser annealing equipment. The transmission method comprises the following steps: providing the laser annealing equipment; placing the first substrate subjected to preheating treatment on a workpiece table, and placing the second substrate on a standby position before preheating treatment for waiting; judging whether the sum of the remaining processing time of the first substrate executing laser annealing and the unloading time of the workpiece table is preset time or not, if yes, sending a preheating signal, feeding the second substrate to the preheating table in response to the preheating signal to execute preheating processing, and if not, returning to the next step; the preset time comprises the time when the second substrate is conveyed to the preheating table, the preheating treatment time and the time when the second substrate is conveyed to the workpiece table; and after the laser annealing treatment is completed on the first substrate, the substrate discharging operation is immediately executed, and after the preheating treatment is executed on the second substrate for the preheating treatment time, the substrate is immediately fed to the workpiece table. The substrate can be protected from thermal damage, and meanwhile the substrate feeding efficiency of the substrate is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a transmission method and system for preheating a substrate of a laser annealing device. Background Art

[0002] Common annealing methods in the semiconductor field include furnace annealing, rapid thermal annealing (RTA), laser annealing, etc. Since laser annealing heating is limited to the surface layer, it can avoid the impact of high-temperature annealing on one side of the silicon wafer on the other side. In addition, the heating during laser annealing is very rapid, and the shorter annealing time will reduce the diffusion effect, making the surface have lower roughness and higher uniformity. Based on these advantages, laser annealing has become very important in the preparation process of some devices.

[0003] Compared with conventional annealing methods, due to the annealing process requirements, the silicon wafer needs to be preheated before laser annealing is performed, so that the temperature of the silicon wafer during laser annealing is within a certain range to prevent the temperature from changing suddenly and causing adverse effects on the silicon wafer. Taking the use of a preheating table (preheating plate) for preheating in a laser annealing device as an example, since the annealing process takes a long time, the silicon wafer that has been preheated usually needs to wait for the annealing of the previous silicon wafer to be completed before loading and annealing. At this time, if the silicon wafer that has been preheated is waiting on the preheating table, once the retention time is long, the silicon wafer will continue to absorb heat and there will be a risk of thermal damage to the silicon wafer. If the silicon wafer that has been preheated is transferred to the handover position with the workpiece table to wait, the temperature of the silicon wafer may be lower than the specified value, which not only affects the success rate of the silicon wafer being handed over to the workpiece table, but may even require reheating, thereby seriously affecting the transmission efficiency (loading efficiency) and annealing efficiency of the silicon wafer. Summary of the invention

[0004] The object of the present invention is to provide a transmission method and system for preheating a substrate in a laser annealing device, which is used to protect the substrate from thermal damage and improve the loading efficiency at the same time.

[0005] In order to solve the above technical problems, the present invention provides a transmission method for preheating a substrate using an optical annealing device, comprising:

[0006] Provide laser annealing equipment, which includes a manipulator, a preheating table and a workpiece table;

[0007] The first substrate that has been preheated on the preheating table is placed on the workpiece table to perform laser annealing, and the second substrate is placed on the standby position before the preheating treatment to wait;

[0008] Determine whether the sum of the remaining processing time for the first substrate to perform the laser annealing and the time for the workpiece stage to be unloaded is the preset time. If so, send a preheating signal, and the second substrate is loaded onto the preheating stage in response to the preheating signal to perform preheating treatment. The preset time includes the time for the second substrate to be transferred to the preheating stage, the preheating treatment time, and the time for the second substrate to be transferred to the workpiece stage.

[0009] Optionally, the laser annealing equipment further includes a wafer library and a pre-alignment stage, and the substrate taken out from the wafer library is aligned by the pre-alignment stage and then transferred to the preheating stage.

[0010] Optionally, the first substrate is placed on the workpiece stage to perform laser annealing, and the second substrate is placed on the handover position of the preheating stage to wait, and the preset time includes the loading time, preheating treatment time, unloading time and transmission time of the second substrate to the workpiece stage.

[0011] Optionally, a third substrate is taken from the film library and placed on the pre-alignment stage for alignment, and the aligned third substrate waits at a handover position on the pre-alignment stage.

[0012] Optionally, the first substrate is placed on the workpiece stage to perform laser annealing, and the second substrate is placed on the handover position of the pre-alignment stage to wait, and the preset time includes the transmission time of the second substrate to the preheating stage, the loading time, the preheating treatment time, the unloading time and the transmission time to the workpiece stage.

[0013] Optionally, the remaining processing time of the first substrate is obtained according to the progress and time of the execution of the first substrate.

[0014] Optionally, the preset time for this batch is determined according to the time for transferring the upper substrate of the first substrate of the same batch to the preheating table, the preheating treatment time, and the time for transferring the lower substrate to the workpiece table.

[0015] Optionally, the preset time for the second substrate is determined according to the time for transferring the upper substrate to the preheating stage, the preheating treatment time, and the time for transferring the lower substrate to the workpiece stage.

[0016] Optionally, the preset time is 0 to 5 seconds less than the sum of the time for transferring the upper sheet of the second substrate to the preheating table, the preheating treatment time, and the time for transferring the lower sheet to the workpiece table.

[0017] According to another aspect of the present invention, a transmission system for preheating a substrate in a laser annealing device is provided, which is used to transmit the substrate between a wafer library, a preheating table and a workpiece table of the laser annealing device, and includes:

[0018] A preset time setting module, used to set the preset time according to the time of transferring the upper sheet of the second substrate to the preheating stage, the preheating treatment time and the time of transferring the lower sheet to the workpiece stage;

[0019] A remaining time monitoring module, used for monitoring and obtaining the remaining processing time of the first substrate on the workpiece stage for performing laser annealing;

[0020] A preheating signal judging module, used for judging whether the sum of the remaining processing time of the first substrate for laser annealing and the unloading time of the workpiece stage is the preset time, and if so, issuing a preheating signal;

[0021] The substrate transfer execution module transfers the first substrate from the workpiece stage and transfers the second substrate to the workpiece stage after the preheating stage performs loading, preheating and unloading operations in response to the preheating signal.

[0022] In summary, according to the present invention, when the first substrate is subjected to laser annealing treatment on the workpiece table, the second substrate is placed on a standby position before preheating treatment and waits, and the remaining processing time of the first substrate for laser annealing is obtained, and it is determined whether the sum of the remaining processing time of the first substrate for laser annealing and the unloading time of the workpiece table is the preset time. If so, a preheating signal is sent, and the second substrate is loaded onto the preheating table in response to the preheating signal to perform preheating treatment. At the same time, the preset time is set as the sum of the loading time, preheating treatment time and the time of transferring the unloading to the workpiece table of the second substrate, so as to achieve the effect of "seamless connection" between the first substrate and the second substrate, that is, when the first substrate is unloaded from the workpiece table after laser annealing treatment, the second substrate after preheating treatment is just transferred to the workpiece table, thereby ensuring that the second substrate is free from thermal damage caused by too long preheating time on the preheating table, and the temperature of the second substrate entering the workpiece table meets the requirements, and the loading efficiency of the workpiece table is improved, so that the semiconductor device has the maximum laser annealing efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Those skilled in the art should understand that the drawings are provided for a better understanding of the present invention and do not constitute any limitation to the present invention.

[0024] Figure 1 is a flow chart of the substrate transmission method provided in Example 1;

[0025] Figure 2 This is a schematic diagram of the structure of the laser annealing equipment provided in Example 1.

[0026] In the attached figure:

[0027] 11-film library; 11a-first material inlet and outlet; 11b-second material inlet and outlet; 12-pre-alignment table; 13-preheating table; 14-manipulator; 15-workpiece table; 16-cooling table. DETAILED DESCRIPTION

[0028] In order to make the purpose, advantages and features of the present invention clearer, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. In addition, the structure shown in the drawings is often a part of the actual structure. In particular, the emphasis of each drawing is different, and sometimes different scales are used.

[0029] It should be understood that when an element or layer is referred to as "on...", "connected to" other elements or layers, it can be directly on other elements or layers, connected to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on...", "directly connected to" other elements or layers, there is no intervening element or layer. Although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish an element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present invention, the first element, component, region, layer or part discussed below can be expressed as a second element, component, region, layer or part. Spatial relationship terms such as "under...", "below", "below", "above...", "above", "above", etc., can be used here for the convenience of description to describe the relationship between an element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, the spatial relationship terms are intended to include different orientations of the devices in use and operation. For example, if the device in the accompanying drawings is turned over, then, the elements or features described as "under...", "below", "below" will be oriented to be "on" other elements or features. The device can be oriented in other ways (rotated 90 degrees or other orientations) and the spatial descriptors used here are interpreted accordingly. The purpose of the terms used here is only to describe specific embodiments and is not intended to be a limitation of the present invention. When used here, the singular forms of "one", "one" and "said / the" are also intended to include plural forms, unless the context clearly indicates another way. It should also be understood that the term "including" is used to determine the existence of features, steps, operations, elements and / or parts, but does not exclude the existence or addition of one or more other features, steps, operations, elements, parts and / or groups. When used here, the term "and / or" includes any and all combinations of the relevant listed items.

[0030] Embodiment 1

[0031] Embodiment 1 provides a transmission method for preheating a substrate using a laser annealing device.

[0032] Figure 1 It is a flow chart of the transmission method for preheating a substrate by laser annealing equipment provided in the first embodiment.

[0033] like Figure 1 As shown, the transmission method for preheating a substrate by a laser annealing device provided in this embodiment includes:

[0034] S01: Provide laser annealing equipment, which includes a manipulator, a preheating table and a workpiece table;

[0035] S02: placing the first substrate that has been preheated on the preheating table on the workpiece table to perform laser annealing, and placing the second substrate on the standby position before the preheating process to wait;

[0036] S03: When it is determined that the sum of the remaining processing time of the first substrate for executing the laser annealing and the time for the workpiece stage to be unloaded is the preset time, a preheating signal is issued, and the second substrate is loaded onto the preheating stage for preheating in response to the preheating signal. The preset time includes the time for transferring the second substrate from the preheating stage to the preheating stage, the preheating time and the time for transferring the second substrate from the preheating stage to the workpiece stage.

[0037] First, step S01 is performed to provide a laser annealing device, which includes a wafer library, a preheating table and a workpiece table.

[0038] Figure 2 This is a schematic diagram of the structure of the laser annealing equipment provided in Example 1. Figure 2As shown, the laser annealing equipment provided in this embodiment may include a wafer library 11, a preheating table 13 and a workpiece table 15. The wafer library 11 may have at least two inlet and outlet ports (e.g., a first inlet and outlet port 11a and a second inlet and outlet port 11b) for the substrate to enter and exit the laser annealing equipment. The workpiece table 15 (including components corresponding to laser annealing, such as a laser) is used to carry the substrate and perform corresponding laser annealing treatment on the substrate thereon. In this embodiment, the substrate may be preheated to a preset temperature before the laser annealing treatment to facilitate the laser annealing. Therefore, the preheating table 13 is provided between the wafer library 11 and the workpiece table 15 (in the processing flow) to carry the substrate and perform preheating treatment (e.g., conduction heating) on ​​the substrate thereon to a preset temperature to facilitate the laser annealing treatment, and the substrate may be heated to a preset temperature by controlling the heating time (preheating treatment time) of the substrate placed on the preheating table 13. It is not difficult to understand that if the substrate is placed on the preheating table 13 for too long, the temperature of the substrate will exceed the preset temperature, and there is a risk of thermal damage to the substrate (semiconductor devices on the substrate). If the substrate is not immediately transferred to the workpiece stage 15 after being preheated to the preset temperature and is exposed to the semiconductor equipment for a long time, the temperature of the substrate will drop significantly and fail to meet the requirements of the laser annealing treatment, so that the substrate will be returned to the preheating table 13 for preheating treatment or preheated on the workpiece stage 15, seriously reducing the productivity of the laser annealing equipment.

[0039] Please continue to refer to Figure 2 The laser annealing equipment may further include a pre-alignment stage 12, a robot 14 and a cooling stage 16. Specifically, in the operation process in the laser annealing equipment, the pre-alignment stage 12 may be arranged between the wafer library 11 and the preheating stage 13, and is used to align the substrate taken from the wafer library 11, and then transfer the aligned substrate to the preheating stage 13. The cooling stage 16 is arranged between the workpiece stage 15 and the wafer library 11, and is used to cool the substrate after laser annealing to room temperature, and then transfer the cooled substrate back to the wafer library 11. The robot 14 may include at least two robot arms (for example, a first robot arm and a second robot arm) for controlling the transmission and transfer of the substrate in the laser annealing equipment.

[0040] Next, step S02 is executed to place the first substrate preheated on the preheating table on the workpiece table for laser annealing, and obtain the remaining processing time of the first substrate for laser annealing, and the second substrate is placed on the standby position before the preheating treatment to wait.

[0041] The substrate can be of any suitable shape, any suitable size and any suitable material. Its shape can be circular or rectangular, and its material can be silicon, glass, sapphire, ceramic or organic glass, etc. The substrate can also be provided with semiconductor devices of corresponding process or semiconductor structures matching the corresponding laser annealing treatment. In the laser annealing equipment of this embodiment, at least the first substrate and the second substrate that enter sequentially from the film library can be included. After the first substrate is preheated, it is placed on the workpiece table for laser annealing treatment. After the second substrate enters from the film library, it is placed on the standby position before the preheating treatment. Among them, the standby position before the preheating treatment may include the handover position of the preheating table or the handover position of the pre-alignment table (after the alignment treatment). In this embodiment, the second substrate can be placed on the handover position of the preheating table to wait.

[0042] In particular, in this embodiment, the remaining processing time of laser annealing of the first substrate on the workpiece stage is monitored in real time to evaluate the subsequent action timing of the second substrate on the standby position, thereby ensuring the preheating time and transmission efficiency of the second substrate.

[0043] In one example, the first substrate and the second substrate belong to the same batch of products. The laser annealing processing time of the first substrate of the same batch can be used as the preset laser annealing time of the batch of products. The remaining laser annealing processing time of the first substrate can be obtained by subtracting the processing time already performed on the workpiece table from the preset laser annealing time.

[0044] In another example, the percentage α (0<α<100%) of the laser annealing process (progress) of the first substrate on the workpiece table and the time t of the laser annealing of the first substrate can be obtained from the laser annealing equipment, and the remaining processing time T of the laser annealing of the first substrate is t*(1-α) / α. Wherein, when the scanning path length and scanning speed of the laser spot on the first substrate are determined, the progress of the above laser annealing process can be obtained from the length of the scan that has been performed.

[0045] Next, execute step S03 to determine whether the sum of the remaining processing time of the first substrate performing laser annealing and the time for the workpiece to be unloaded from the workpiece stage is the preset time. If so, a preheating signal is sent, and the second substrate is placed on the preheating stage in response to the preheating signal for preheating treatment. The preset time includes the time for the second substrate to be transferred to the preheating stage, the preheating treatment time, and the transmission time for the second substrate to be transferred from the workpiece stage to the workpiece stage.

[0046] In this embodiment, the second substrate is placed on the handover position of the preheating table. After receiving the preheating signal, the second substrate is immediately placed on the preheating table from the handover position of the preheating table to perform preheating treatment, and performs preheating for a preset treatment time, and then immediately unloads from the preheating table to the robot, and is transmitted by the robot to the workpiece table for laser annealing treatment. In the above process, the first substrate continues to perform laser annealing treatment until completion, and then immediately unloads to the robot for subsequent operations. Among them, the second substrate may include four actions (operations) of loading, preheating, unloading (to the robot) and transmission to the workpiece table starting from the preheating signal, and the sum of the time required for the continuous and smooth execution of the four actions may be the first time (preset time), and the first substrate may include two actions of continuing to perform laser annealing treatment until completion and unloading to the robot starting from the preheating signal, and the sum of the time required for the continuous and smooth execution of the two actions may be the second time. Therefore, if the second time is equal to the first time, it can be ensured that the second substrate is loaded, preheated, and unloaded in advance when the first substrate is being laser annealed, and when the second substrate after preheating is transferred to the workpiece stage, the first substrate has just completed laser annealing and has been unloaded. Of course, in practice, the first time and the preset time can also differ by 0 to 5 seconds, that is, the first time is 0 to 5 seconds greater than the preset time, so as to provide partial time redundancy to prevent interference.

[0047] In practice, if the first substrate and the second substrate belong to the same batch of substrates, the preset time of this batch can usually be determined based on the loading time, transfer time and preheating time of the first substrate of the same batch. Of course, the preset time of the next substrate (the second substrate) can also be directly determined based on the time of transferring the previous substrate (the first substrate) to the preheating table, the preheating time and the time of transferring the next substrate to the workpiece table.

[0048] In some examples, since the first substrate and the second substrate both include a unloading action (i.e., the unloading time of the workpiece stage and the unloading time of the preheating stage), that is, the first time and the second time both include the unloading time, while ignoring the difference in the unloading time of different platforms or considering them to be the same, the unloading time in the first time and the second time can also be omitted at the same time, that is, the preset time is the loading time, preheating treatment time and transmission time of the second substrate to the workpiece stage, and it is determined whether the remaining processing time for the first substrate to perform laser annealing is the preset time. If so, a preheating signal is issued.

[0049] Next, the first substrate is unloaded immediately after the laser annealing treatment is completed, and the second substrate is preheated until the preheating time has elapsed and then loaded onto the workpiece stage immediately.

[0050] It can be seen from the above settings that when the first substrate is being laser annealed, the second substrate is loaded, preheated, and unloaded in advance, and when the first robot arm takes the first substrate away from the handover position of the workpiece table, the second robot arm just transfers the second substrate after the preheating treatment to the handover position of the workpiece table, thereby achieving "seamless connection" between the two, which not only ensures that the second substrate is protected from thermal damage caused by too long preheating time on the preheating table, but also ensures that the temperature of the second substrate entering the workpiece table meets the requirements, and by improving the loading efficiency of the workpiece table, the laser annealing equipment has the maximum laser annealing efficiency.

[0051] It should be noted that, in the above process, the laser annealing equipment may also include other substrates that perform corresponding operations on corresponding platforms to improve the operating efficiency of the entire laser annealing equipment. In one example, a first substrate is laser annealed on a workpiece table, a second substrate waits at a handover position of a preheating table, a second robot arm takes out a fourth substrate after alignment from the handover position of a pre-alignment table and turns to wait in the direction of the preheating table, a first robot arm takes out a third substrate from a first inlet and outlet and places it at a handover position of the pre-alignment table; after obtaining a preheating signal, the second substrate is loaded onto the preheating table for preheating treatment until completion and then unloaded to its handover position, a first robot arm takes out the second substrate from the handover position of the preheating table, a second robot arm places the fourth substrate at the handover position of the preheating table and waits, a second robot arm turns to the workpiece table to take out the first substrate that has been laser annealed and unloaded, and a first robot arm takes out the second substrate onto the workpiece table; a first robot arm takes out a fifth substrate that has been cooled on a cooling table, a second robot arm places the first substrate on the cooling table, and a first robot arm places the fifth substrate back to the first inlet and outlet.

[0052] Embodiment 2

[0053] Embodiment 2 provides a transmission method for preheating a substrate using a laser annealing device.

[0054] Figure 1 It is a flow chart of the transmission method for preheating a substrate by laser annealing equipment provided in the second embodiment.

[0055] like Figure 1 As shown, the transmission method for preheating a substrate by a laser annealing device provided in this embodiment includes:

[0056] Provide laser annealing equipment, which includes a manipulator, a preheating table and a workpiece table;

[0057] The first substrate that has been preheated on the preheating table is placed on the workpiece table to perform laser annealing, and the second substrate is placed on the standby position before the preheating treatment to wait;

[0058] Determine whether the sum of the remaining processing time for the first substrate to perform the laser annealing and the time for the workpiece stage to be unloaded is the preset time. If so, send a preheating signal, and the second substrate is loaded onto the preheating stage in response to the preheating signal to perform preheating treatment. The preset time includes the time for the second substrate to be transferred to the preheating stage, the preheating treatment time, and the time for the second substrate to be transferred to the workpiece stage.

[0059] The substrate transmission method provided in this embodiment is basically the same as the transmission method in Embodiment 1, with the only difference being that, in this embodiment, when the first substrate is placed on the workpiece stage for laser annealing treatment, the second substrate is placed on the handover position of the pre-alignment stage for waiting after pre-alignment. Therefore, the preset time includes the transmission time of the second substrate to the preheating stage, the loading time, the preheating treatment time and the unloading time to the workpiece stage.

[0060] Embodiment 3

[0061] Embodiment 3 provides a transmission system for preheating a substrate in a laser annealing device.

[0062] The substrate transmission system provided in this embodiment can adopt the substrate transmission method provided in embodiment 1 or embodiment 2, and is used to transmit substrates between the film library, preheating table and workpiece table of the laser annealing equipment, and can include a preset time setting module, a remaining time monitoring module, a preheating signal judgment module and a substrate transmission execution module. The preset time setting module is used to set the preset time according to the time when the second substrate is transferred from the upper film to the preheating table, the preheating treatment time and the transmission time when the lower film is transferred to the workpiece table; the remaining time monitoring module is used to monitor and obtain the remaining processing time of the first substrate on the workpiece table to perform laser annealing; the preheating signal judgment module is used to determine whether the sum of the remaining processing time of the first substrate to perform laser annealing and the lower film time of the workpiece table is the preset time, and if so, a preheating signal is issued; the substrate transmission execution module, after the preheating table responds to the preheating signal to perform the loading, preheating and lowering operations, the first substrate is transferred from the workpiece table, and the second substrate is transferred to the workpiece table. Of course, the substrate transmission execution module also performs substrate transmission operations between other components in the laser annealing equipment.

[0063] In summary, according to the present invention, when the first substrate is subjected to laser annealing treatment on the workpiece table, the second substrate is placed on a standby position before preheating treatment and waits, and the remaining processing time of the first substrate for laser annealing is obtained, and it is determined whether the sum of the remaining processing time of the first substrate for laser annealing and the unloading time of the workpiece table is the preset time. If so, a preheating signal is sent, and the second substrate is loaded onto the preheating table in response to the preheating signal to perform preheating treatment. At the same time, the preset time is set as the sum of the loading time, preheating treatment time and the time of transferring the unloading to the workpiece table of the second substrate, so as to achieve the effect of "seamless connection" between the first substrate and the second substrate, that is, when the first substrate is unloaded from the workpiece table after laser annealing treatment, the second substrate after preheating treatment is just transferred to the workpiece table, thereby ensuring that the second substrate is free from thermal damage caused by too long preheating time on the preheating table, and the temperature of the second substrate entering the workpiece table meets the requirements, and the loading efficiency of the workpiece table is improved, so that the semiconductor device has the maximum laser annealing efficiency.

[0064] The above description is only a description of the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention. Any changes or modifications made by a person skilled in the art in the field of the present invention based on the above disclosure shall fall within the scope of protection of the claims.

Claims

1. A transmission method for preheating a substrate in a laser annealing device, characterized in that: include: Provide laser annealing equipment, which includes a manipulator, a preheating table and a workpiece table; The first substrate that has been preheated on the preheating table is placed on the workpiece table to perform laser annealing, and the second substrate is placed on the standby position before the preheating treatment to wait; Determine whether the sum of the remaining processing time for the first substrate to perform the laser annealing and the time for the workpiece stage to be unloaded is the preset time. If so, send a preheating signal, and the second substrate is loaded onto the preheating stage in response to the preheating signal to perform preheating treatment. The preset time includes the time for the second substrate to be transferred to the preheating stage, the preheating treatment time, and the time for the second substrate to be transferred to the workpiece stage.

2. The transmission method for preheating a substrate by laser annealing equipment according to claim 1, characterized in that: The laser annealing equipment further comprises a wafer library and a pre-alignment stage. The substrate taken out from the wafer library is aligned by the pre-alignment stage and then transferred to the preheating stage.

3. The transmission method for preheating a substrate by laser annealing equipment according to claim 2, characterized in that: The first substrate is placed on the workpiece stage to perform laser annealing, and the second substrate is placed on the handover position of the preheating stage to wait. The preset time includes the loading time, preheating time, unloading time and transmission time of the second substrate to the workpiece stage.

4. The transmission method for preheating a substrate by laser annealing equipment according to claim 3, characterized in that: A third substrate is taken from the film library and placed on the pre-alignment stage for alignment. The aligned third substrate waits at a handover position on the pre-alignment stage.

5. The transmission method for preheating a substrate by laser annealing equipment according to claim 2, characterized in that: The first substrate is placed on the workpiece stage to perform laser annealing, and the second substrate is placed on the handover position of the pre-alignment stage to wait. The preset time includes the transmission time of the second substrate to the preheating stage, the loading time, the preheating treatment time, the unloading time and the transmission time to the workpiece stage.

6. The transmission method for preheating a substrate by laser annealing equipment according to claim 1, characterized in that: The remaining processing time of the first substrate is obtained according to the progress and time of the processing of the first substrate.

7. The transmission method for preheating a substrate by laser annealing equipment according to claim 1, characterized in that: The preset time of this batch is determined according to the time when the first substrate of the same batch is transferred from the upper substrate to the preheating stage, the preheating treatment time, and the time when the lower substrate is transferred from the workpiece stage.

8. The transmission method for preheating a substrate by a laser annealing device according to claim 1, characterized in that: The preset time of the second substrate is determined according to the time of transferring the upper substrate to the preheating stage, the preheating treatment time and the time of transferring the lower substrate to the workpiece stage of the first substrate.

9. The transmission method for preheating a substrate by laser annealing equipment according to claim 1, characterized in that: The preset time is 0 to 5 seconds less than the sum of the time for transferring the upper sheet of the second substrate to the preheating stage, the preheating treatment time, and the time for transferring the lower sheet to the workpiece stage.

10. A transmission system for preheating substrates in a laser annealing device, used for transmitting substrates between a wafer library, a preheating table and a workpiece table in the laser annealing device, characterized in that: include: A preset time setting module, used to set the preset time according to the time of transferring the upper sheet of the second substrate to the preheating stage, the preheating treatment time and the time of transferring the lower sheet to the workpiece stage; A remaining time monitoring module, used for monitoring and obtaining the remaining processing time of the first substrate on the workpiece stage for performing laser annealing; A preheating signal judging module, used for judging whether the sum of the remaining processing time of the first substrate for laser annealing and the unloading time of the workpiece stage is the preset time, and if so, issuing a preheating signal; The substrate transfer execution module transfers the first substrate from the workpiece stage and transfers the second substrate to the workpiece stage after the preheating stage performs loading, preheating and unloading operations in response to the preheating signal.

Images