Semiconductor process chamber

Abstract

The invention discloses a semiconductor process chamber which comprises a chamber body, a supporting assembly, a wafer boat, a first electrode assembly, a second electrode assembly and an auxiliary cleaning tool, the supporting assembly is arranged in the chamber body and used for supporting the wafer boat, the wafer boat comprises a plurality of boat pages which are sequentially arranged at intervals, and the first electrode assembly and the second electrode assembly are arranged in the chamber body. The semiconductor process chamber comprises a cleaning mode; under the condition that the semiconductor process chamber is in a cleaning mode, the wafer boat is supported on the supporting assembly, the auxiliary cleaning tool and the boat page on the outermost side of the wafer boat are opposite and arranged in a spaced mode, the boat page on the outermost side of the wafer boat is electrically connected with the first electrode assembly, and the auxiliary cleaning tool is electrically connected with the second electrode assembly. According to the scheme, the problem that the cleaning effect of the semiconductor process chamber on the boat page on the outermost side of the wafer boat is poor in the prior art can be solved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor process equipment, and in particular to a semiconductor process chamber. Background Art

[0002] Solar cell power generation is an important way to solve energy and environmental problems. Most solar cells are now made of crystalline silicon materials, and coating is an important step in manufacturing high-efficiency silicon cells. The commonly used method is tubular PECVD (Plasma Enhanced Chemical Vapor Deposition) to coat silicon nitride and Poly silicon.

[0003] Plasma enhanced chemical vapor deposition uses low-temperature plasma as an energy source, and requires a wafer boat to load silicon wafers into the chamber for coating. During the coating process of silicon wafers, a film layer will also be deposited on the surface of the wafer boat. As the number of processes increases, the film layer on the surface of the wafer boat will become thicker and thicker. However, too thick a film layer on the surface of the wafer boat will affect the conversion efficiency and yield rate of the silicon wafer. Therefore, the wafer boat needs to be cleaned regularly.

[0004] In the related art, the cleaning of the wafer boat mainly adopts wet cleaning and plasma cleaning. However, when wet cleaning is adopted, it is not only easy to cause damage to the wafer boat, but also the cleaning time is long. When plasma cleaning is adopted, the cleaning gas is introduced into the chamber body, and the wafer boat is ignited to ionize the cleaning gas into plasma, so as to clean the wafer boat. Plasma cleaning can better clean the inner boat pages of the wafer boat, but there is still a problem of poor cleaning effect for the outermost boat pages of the wafer boat. Summary of the invention

[0005] The invention discloses a semiconductor process chamber to solve the problem that the semiconductor process chamber in the related art has a poor cleaning effect on the outermost boat page of a wafer boat.

[0006] In order to solve the above-mentioned technical problems, the present invention is achieved as follows:

[0007] In a first aspect, the present application discloses a semiconductor process chamber, including a chamber body, a support assembly, a wafer boat, a first electrode assembly, a second electrode assembly and an auxiliary cleaning tool, wherein:

[0008] The support assembly is disposed in the chamber body and is used to support the wafer boat, wherein the wafer boat includes a plurality of boat pages arranged in sequence and at intervals, and the semiconductor process chamber includes a cleaning mode;

[0009] When the semiconductor process chamber is in the cleaning mode, the wafer boat is supported by the supporting assembly, the auxiliary cleaning tooling is opposite to the outermost boat page of the wafer boat and is spaced apart, the outermost boat page of the wafer boat is electrically connected to the first electrode assembly, and the auxiliary cleaning tooling is electrically connected to the second electrode assembly.

[0010] The technical solution adopted by the present invention can achieve the following technical effects:

[0011] The semiconductor process chamber disclosed in the embodiment of the present application is provided with an auxiliary cleaning tool, so that when the wafer boat is cleaned, the auxiliary cleaning tool can be set at a position opposite to the outermost boat page of the wafer boat and spaced apart from the outermost boat page of the wafer boat, and the first electrode assembly is electrically connected to the outermost boat page of the wafer boat, and the second electrode assembly is electrically connected to the auxiliary cleaning tool, so that the radio frequency power supply energy is fed into the outermost boat page of the wafer boat and the auxiliary cleaning tool through the first electrode assembly and the second electrode assembly, so as to ionize the cleaning gas located between the outermost boat page of the wafer boat and the auxiliary cleaning tool to form plasma, so that the film layer on the outermost boat page of the wafer boat reacts with the plasma to generate gaseous reactants for discharge, thereby better achieving the cleaning of the film layer on the outermost boat page of the wafer boat. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 A schematic diagram of the structure of a semiconductor process chamber disclosed in an embodiment of the present invention;

[0013] Figure 2 A simplified schematic diagram of a semiconductor process chamber disclosed in an embodiment of the present invention;

[0014] Figure 3 A schematic diagram of a semiconductor process chamber disclosed in an embodiment of the present invention at a first viewing angle;

[0015] Figure 4 A schematic diagram of a semiconductor process chamber disclosed in an embodiment of the present invention at a second viewing angle;

[0016] Figure 5 A schematic diagram of the structure of a semiconductor process chamber disclosed in an embodiment of the present invention;

[0017] Figure 6 for Figure 5 A local enlarged view of point A in FIG.

[0018] Figure 7 A schematic diagram of the structure of a wafer boat disclosed in an embodiment of the present invention;

[0019] Figure 8 It is a structural schematic diagram of the auxiliary cleaning tool disclosed in an embodiment of the present invention;

[0020] Fig. 9 It is a schematic diagram of the wafer boat after disassembly of the auxiliary cleaning tooling disclosed in the embodiment of the present invention;

[0021] Fig.10 It is a schematic diagram of the assembly of the wafer boat and the auxiliary cleaning tooling disclosed in an embodiment of the present invention.

[0022] Description of reference numerals:

[0023] 100-chamber body,

[0024] 200-support assembly, 210-first support rod, 220-second support rod, 230-first flange, 231-electrode feeding structure, 240-second flange,

[0025] 300-crystal boat, 310-boat page, 320-electrode hole, 330-mounting rod, 340-nut, 350-gasket,

[0026] 400-first electrode assembly,

[0027] 500 - second electrode assembly, 510 - first radio frequency electrode, 520 - second radio frequency electrode,

[0028] 600- auxiliary cleaning tool, 610- clamp,

[0029] 700-RF power supply,

[0030] 800 - SPDT switch. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the specific embodiments of the present invention and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0032] The technical solutions disclosed in various embodiments of the present invention are described in detail below in conjunction with the accompanying drawings.

[0033] Please refer to Figures 1 to 10 An embodiment of the present invention discloses a semiconductor process chamber, which includes a chamber body 100, a support assembly 200, a wafer boat 300, a first electrode assembly 400, a second electrode assembly 500 and an auxiliary cleaning tool 600.

[0034] The chamber body 100 may be a quartz tube. Of course, the chamber body 100 may also be other structures. The embodiment of the present application does not limit the specific structure of the chamber body 100.

[0035] The supporting assembly 200 is disposed in the chamber body 100 and is used to support the wafer boat 300 .

[0036] The wafer boat 300 may be made of graphite. Of course, the wafer boat 300 may also be made of other materials. The present application does not specifically limit the material of the wafer boat 300. The wafer boat 300 includes a plurality of boat pages 310 arranged in sequence. The RF power supply 700 may be electrically connected to the wafer boat 300 to provide the energy required for ionization of the process gas, so that the silicon wafer carried on the wafer boat 300 may be subjected to a coating process. It should be noted that when the silicon wafer is subjected to a coating process, the chamber body 100 is in a heated state, and the chamber body 100 is in a vacuum state.

[0037] The semiconductor process chamber includes a cleaning mode. During the process of coating the silicon wafer, a film layer will also be deposited on the surface of the wafer boat 300. As the number of processes of the wafer boat 300 increases, the film layer on the surface of the wafer boat 300 will become thicker and thicker. The cleaning mode in the embodiment of the present application refers to a mode for cleaning the film layer deposited on the wafer boat 300.

[0038] When the semiconductor process chamber is in a cleaning mode, the wafer boat 300 is supported by the support assembly 200, and the auxiliary cleaning tool 600 is opposite to and spaced from the outermost boat page 310 of the wafer boat 300. The outermost boat page 310 of the wafer boat 300 is electrically connected to the first electrode assembly 400, and the auxiliary cleaning tool 600 is electrically connected to the second electrode assembly 500.

[0039] When cleaning the wafer boat 300, it is necessary to introduce a cleaning gas into the chamber body 100. The cleaning gas may be one or any combination of NF3 (nitrogen trifluoride), SF6 (sulfur hexafluoride), CF4 (carbon tetrafluoride), F2 (fluorine gas), fluorine-containing gas, and one or more of Ar (argon) and O2 (oxygen). After the cleaning gas is introduced, the RF power supply energy is fed into the outermost boat page 310 and the auxiliary cleaning tool 600 of the wafer boat 300 through the first electrode assembly 400 and the second electrode assembly 500, so as to ignite the outermost boat page 310 and the auxiliary cleaning tool 600 located between the wafer boat 300, so as to ionize the cleaning gas to form plasma (such as fluorine free radicals), so as to react the film layer on the outermost boat page 310 of the wafer boat 300 with the plasma to generate gaseous reactants for discharge, so as to achieve the cleaning of the film layer on the outermost boat page 310 of the wafer boat 300.

[0040] It should be noted that one of the first electrode assembly 400 and the second electrode assembly 500 is a cathode electrode, and the other is an anode electrode.

[0041] The semiconductor process chamber disclosed in the embodiment of the present application is provided with an auxiliary cleaning tool 600, so that when cleaning the wafer boat 300, the auxiliary cleaning tool 600 can be set at a position opposite to the outermost boat page 310 of the wafer boat 300, and spaced apart from the outermost boat page 310 of the wafer boat 300, and the first electrode assembly 400 is electrically connected to the outermost boat page 310 of the wafer boat 300, and the second electrode assembly 500 is electrically connected to the auxiliary cleaning tool 600, so that the RF power supply energy is fed into the outermost boat page 310 of the wafer boat 300 and the auxiliary cleaning tool 600 through the first electrode assembly 400 and the second electrode assembly 500, so as to ionize the cleaning gas located between the outermost boat page 310 of the wafer boat 300 and the auxiliary cleaning tool 600 to form plasma, so that the film layer on the outermost boat page 310 of the wafer boat 300 reacts with the plasma to generate gaseous reactants for discharge, thereby better achieving the cleaning of the film layer on the outermost boat page 310 of the wafer boat 300.

[0042] In an optional embodiment, the plurality of boats 310 may be divided into a first boat group and a second boat group, and the first boat group may include the outermost boats 310 of the wafer boat 300. When the semiconductor process chamber is in a cleaning mode, the first boat group may be electrically connected to the first electrode assembly 400, and the second boat group may be electrically connected to the second electrode assembly 500.

[0043] It should be noted that the first boat group and the second boat group may include a plurality of boats 310, respectively, and the boats 310 of the first boat group and the boats 310 of the second boat group may be arranged in sequence in an interlaced and cross-arranged manner. The first electrode assembly 400 may feed power RF energy into the boats 310 of the first boat group, and the second electrode assembly 500 may feed power RF energy into the boats 310 of the second boat group, so that the cleaning gas between the boats 310 of the first boat group and the boats 310 of the second boat group may be ionized to form plasma, so that the plasma may clean the film layer on the inner boat 310 of the wafer boat 300.

[0044] When the semiconductor process chamber disclosed in the embodiment of the present application is in a cleaning mode, the film layer on the boat page 310 inside the wafer boat 300 can be cleaned by electrically connecting the first boat page group to the first electrode assembly 400 and the second boat page group to the second electrode assembly 500.

[0045] In a specific implementation, when the semiconductor process chamber is in a cleaning mode, the first boat page group is electrically connected to the first electrode assembly 400, and the second boat page group and the auxiliary cleaning tool 600 can be electrically connected to the second electrode assembly 500 at the same time, so that the outermost boat page 310 and the inner boat page 310 of the wafer boat 300 can be cleaned at the same time. However, in some cases, the thickness of the film layer on the outermost boat page 310 and the inner boat page 310 of the wafer boat 300 is different. If the outermost boat page 310 and the inner boat page 310 of the wafer boat 300 are cleaned at the same time, then the boat page 310 with a thinner film layer deposition will be cleaned first, and if the cleaning continues, the wafer boat 300 will be etched.

[0046] In order to avoid etching the wafer boat 300, optionally, when the auxiliary cleaning tool 600 is electrically connected to the second electrode assembly 500, the second boat page group is insulated and isolated from the second electrode assembly 500. When the second boat page group is electrically connected to the second electrode assembly 500, the auxiliary cleaning tool 600 is insulated and isolated from the second electrode assembly 500, so that the outermost boat page 310 and the inner boat page 310 of the wafer boat 300 are cleaned separately, thereby avoiding etching of the wafer boat 300.

[0047] In order to make full use of the semiconductor process chamber, the semiconductor process chamber may further include a process mode. The process mode refers to a mode in which a film coating process is performed on a silicon wafer carried on a wafer boat 300. When the semiconductor process chamber is in the process mode, the first boat-page group is electrically connected to the first electrode assembly 400, the second boat-page group is electrically connected to the second electrode assembly 500, and the auxiliary cleaning tool 600 is insulated and isolated from the second electrode assembly 500.

[0048] It should be noted that, when the semiconductor process chamber is in the process mode, the process gas can be introduced into the chamber body 100, and the first electrode assembly 400 and the second electrode assembly 500 can feed the power RF energy into the boats 310 of the first boat-page group and the boats 310 of the second boat-page group, thereby providing the energy required for ionizing the process gas, so that the process gas is ionized to form plasma, and the silicon wafer carried on the wafer boat 300 can be subjected to the coating process. The first electrode assembly 400 and the second electrode assembly 500 can be electrically connected to the boats 310 of the first boat-page group and the boats 310 of the second boat-page group through the electrode holes 320 on the wafer boat 300, respectively.

[0049] The semiconductor process chamber disclosed in the embodiment of the present application can not only be used to clean the wafer boat 300 , but also be used to perform a coating process on the silicon wafers carried on the wafer boat 300 , thereby making full use of the semiconductor process chamber.

[0050] In order to better clean the wafer boat 300 , optionally, when the semiconductor process chamber is in a cleaning mode, auxiliary cleaning tools 600 may be provided on both opposite sides of the wafer boat 300 .

[0051] The semiconductor process chamber disclosed in the embodiment of the present application is provided with auxiliary cleaning tools 600 on opposite sides of the wafer boat 300 , so that the two outermost boat pages 310 of the wafer boat 300 can be well cleaned, thereby improving the cleaning capability of the wafer boat 300 .

[0052] In an optional embodiment, the support assembly 200 may include a first support rod 210 and a second support rod 220 that are spaced apart. The first support rod 210 and the second support rod 220 may both be provided with an auxiliary cleaning tool 600. When the first support rod 210 and the second support rod 220 support the wafer boat 300, the wafer boat 300 is located between the auxiliary cleaning tool 600 on the first support rod 210 and the auxiliary cleaning tool 600 on the second support rod 220.

[0053] The semiconductor process chamber disclosed in the embodiment of the present application makes the structure of the support assembly 200 relatively simple and facilitates the layout of the wafer boat 300 and the auxiliary cleaning tooling 600 by configuring the support assembly 200 to include the first support rod 210 and the second support rod 220 that are spaced apart.

[0054] To facilitate the installation of the auxiliary cleaning tool 600, the auxiliary cleaning tool 600 may optionally include a fixing clamp 610, and the auxiliary cleaning tool 600 may be fixed to the first support rod 210 or the second support rod 220 by the fixing clamp 610. Of course, the auxiliary cleaning tool 600 may also be installed on the first support rod 210 and the second support rod 220 by other methods, and the embodiment of the present application does not limit the specific installation method of the auxiliary cleaning tool 600.

[0055] The semiconductor process chamber disclosed in the embodiment of the present application installs the auxiliary cleaning tool 600 on the first support rod 210 or the second support rod 220 through the clamp 610, which not only makes the installation of the auxiliary cleaning tool 600 more stable, but also facilitates the disassembly and installation of the auxiliary cleaning tool 600.

[0056] Optionally, the second electrode assembly 500 may include a first RF electrode 510, and both the first support rod 210 and the second support rod 220 may be provided with the first RF electrode 510, and the first RF electrode 510 may extend along the extension direction of the first support rod 210 or the second support rod 220. The auxiliary cleaning tool 600 on the first support rod 210 and the auxiliary cleaning tool 600 on the second support rod 220 may be electrically connected to the corresponding first RF electrode 510, respectively.

[0057] The semiconductor process chamber disclosed in the embodiment of the present application is advantageous for compactness of component arrangement by disposing the first RF electrode 510 on the first support rod 210 or the second support rod 220 and extending along the extension direction of the first support rod 210 or the second support rod 220 .

[0058] In order to feed power RF energy to the second boat-sheet group and the auxiliary cleaning tool 600 separately, the second electrode assembly 500 may optionally further include a second RF electrode 520, and the second RF electrode 520 may be electrically connected to the second boat-sheet group.

[0059] When it is necessary to clean the outermost boat page 310 and the inner boat page 310 of the wafer boat 300 separately, the RF power supply 700 of the semiconductor process chamber can be electrically connected to the first RF electrode 510 and the second RF electrode 520 respectively through the single-pole double-throw switch 800, so that the connection between the RF power supply 700 and the first RF electrode 510 or the second RF electrode 520 can be achieved by controlling the single-pole double-throw switch 800, and then the outermost boat page 310 and the inner boat page 310 of the wafer boat 300 can be cleaned separately.

[0060] In an optional embodiment, the support assembly 200 may further include a first flange 230 and a second flange 240, the first end of the first support rod 210 and the first end of the second support rod 220 may be connected to the first flange 230, and the second end of the first support rod 210 and the second end of the second support rod 220 may be connected to the second flange 240. The first flange 230 includes an electrode feeding structure 231, the first end of the first RF electrode 510 is connected to the electrode feeding structure 231, and the second end of the first RF electrode 510 is connected to the auxiliary cleaning tool 600.

[0061] The semiconductor process chamber disclosed in the embodiment of the present application makes the structure of the support assembly 200 more stable by configuring the support assembly 200 to include a first flange 230 and a second flange 240. By configuring the electrode feeding structure 231 on the first flange 230, the first end of the first RF electrode 510 is connected to the electrode feeding structure 231, thereby facilitating feeding the RF energy of the RF power supply 700 into the auxiliary cleaning tooling 600 through the electrode feeding structure 231 and the first RF electrode 510. In addition, the electrode feeding structure 231 can also fix the first RF electrode 510.

[0062] In another embodiment, when the semiconductor process chamber is in the cleaning mode, the auxiliary cleaning tool 600 is detachably connected to the outermost boat page 310 of the wafer boat 300, thereby facilitating maintenance, inspection, replacement, etc. of the auxiliary cleaning tool 600.

[0063] Specifically, the wafer boat 300 may include a mounting rod 330 extending to the outermost boat leaf 310, and the auxiliary cleaning tool 600 may be provided with a mounting through hole, and the auxiliary cleaning tool 600 may be sleeved on the mounting rod 330 through the mounting through hole, and may be threadedly matched with the mounting rod 330 through a nut 340, so as to install the auxiliary cleaning tool 600 on the wafer boat 300. A gasket 350 may also be provided between the nut 340 and the auxiliary cleaning tool 600, so that the nut 340 can be more stably installed on the auxiliary cleaning tool 600.

[0064] Optionally, the plurality of boats 310 may be divided into a first boat group and a second boat group, the first boat group may include the outermost boat 310 of the wafer boat 300, and the semiconductor process chamber further includes a process mode. When the semiconductor process chamber is in the cleaning mode, the first boat group is electrically connected to the first electrode assembly 400, the second boat group is electrically connected to the second electrode assembly 500, and / or the auxiliary cleaning tool 600 is electrically connected to the second electrode assembly 500. When the semiconductor process chamber is in the process mode, the auxiliary cleaning tool 600 is separated from the wafer boat 300.

[0065] When the semiconductor process chamber disclosed in the embodiment of the present application is in a cleaning mode, the first boat-page group is electrically connected to the first electrode assembly 400, and the second boat-page group is electrically connected to the second electrode assembly 500, so that the film layer on the boat page 310 inside the wafer boat 300 can be cleaned. When the semiconductor process chamber is in a process mode or other non-cleaning mode, the auxiliary cleaning tool 600 can be separated from the wafer boat 300, so that the film layer can be prevented from being formed on the auxiliary cleaning tool 600 when the silicon wafer is subjected to a coating process.

[0066] In order to improve the cleaning effect of the outermost boat page 310 of the crystal boat 300, optionally, the auxiliary cleaning tooling 600 can be a non-hollow plate-like structure, and in the direction perpendicular to the surface of the non-hollow plate-like structure, the projection of the outer edge contour of the auxiliary cleaning tooling 600 can be located outside the projection of the outermost boat page 310 of the crystal boat 300.

[0067] The semiconductor process chamber disclosed in the embodiment of the present application sets the auxiliary cleaning tool 600 as a non-hollow plate-like structure, and in the direction perpendicular to the surface of the non-hollow plate-like structure, the projection of the outer edge contour of the auxiliary cleaning tool 600 is located on the projection of the outermost boat page 310 of the wafer boat 300, so that during the ionization process, the plasma can better cover the outermost boat page 310 of the wafer boat 300, thereby improving the cleaning effect of the outermost boat page 310 of the wafer boat 300.

[0068] Of course, the auxiliary cleaning tool 600 may also be a hollow plate-shaped structure, which can be beneficial to reducing the weight of the auxiliary cleaning tool 600. The embodiment of the present application does not limit the specific structure of the auxiliary cleaning tool 600.

[0069] The distance between the auxiliary cleaning tool 600 and the outermost boat page 310 of the wafer boat 300 may be between 12 mm and 30 mm, which is beneficial to the ignition stability between the auxiliary cleaning tool 600 and the outermost boat page 310 of the wafer boat 300. Of course, the distance between the auxiliary cleaning tool 600 and the outermost boat page 310 of the wafer boat 300 may also be other distances, and the embodiment of the present application does not specifically limit the distance between the auxiliary cleaning tool 600 and the outermost boat page 310 of the wafer boat 300.

[0070] Specifically, the auxiliary cleaning tool 600 may be made of metal or graphite, so that the auxiliary cleaning tool 600 may have better strength and better conductivity.

[0071] Optionally, the semiconductor process chamber may further include a RF power supply 700, and the first electrode assembly 400 and the second electrode assembly 500 may both be connected to the RF power supply 700. The power frequency output by the RF power supply 700 may be between 20KHz and 400KHz, and the power output by the RF power supply 700 may be between 10KW and 30KW.

[0072] The semiconductor process chamber disclosed in the embodiment of the present application can take into account both the coating process of silicon wafers and the cleaning process of wafer boat 300 in the semiconductor process chamber by setting the power frequency output by the RF power supply 700 between 20KHz-400KHz and the power output by the RF power supply 700 between 10KW-30KW, thereby allowing the semiconductor process chamber to combine the coating process and the cleaning process together, which is beneficial to the simplification of the semiconductor process chamber.

[0073] A specific method for cleaning a wafer boat 300 in a semiconductor process chamber. Step 1: After the wafer boat 300 has been used for the coating process with silicon wafers for the number of times, the wafer boat 300 is unloaded and transferred to the chamber body 100, the wafer boat 300 is supported on the support assembly 200, and the first boat page assembly of the wafer boat 300 is electrically connected to the first electrode assembly 400, the auxiliary cleaning tool 600 is electrically connected to the second electrode assembly 500, and the transmission of the chamber body 100 is closed. The first boat page assembly includes the outermost boat page 310 of the wafer boat 300.

[0074] Step 2: heating the wafer boat 300 , evacuating the chamber body 100 , and detecting whether the chamber body 100 has leakage.

[0075] Step 3: When it is detected that there is no leakage in the chamber body 100 , a cleaning gas is introduced into the chamber body 100 , and the pressure in the chamber body 100 is adjusted to be between 20 Pa and 600 Pa.

[0076] Step 4: Control the RF power supply 700 to feed RF energy to the outermost boat leaf 310 of the wafer boat 300 and the auxiliary cleaning tool 600 through the first electrode assembly 400 and the second electrode assembly 500, respectively, so as to ionize the cleaning gas between the outermost boat leaf 310 of the wafer boat 300 and the auxiliary cleaning tool 600 to form plasma, and the plasma reacts with the film layer on the outermost boat leaf 310 of the wafer boat 300 to generate gaseous reactants to be discharged from the chamber body 100. The power frequency output by the RF power supply 700 is between 20KHz and 400KHz, and the power output by the RF power supply 700 is between 10KW and 30KW.

[0077] Step five: electrically connect the second boat page assembly of the wafer boat 300 to the second electrode assembly 500 to clean the boat page 310 inside the wafer boat 300 .

[0078] It should be noted that during the cleaning of the wafer boat 300 in the semiconductor process chamber, the chamber body 100 is maintained in a vacuum and constant pressure state, and the vacuum pump continuously evacuates the chamber body 100 to discharge the reacted gaseous compounds and excess cleaning gas out of the chamber body 100.

[0079] Step 6: After the wafer boat 300 is cleaned, an inert gas (such as nitrogen, argon, etc.) is introduced into the chamber body 100 to purge the chamber body 100 .

[0080] Step 7: After the chamber body 100 is cleaned, the chamber body 100 is backfilled with inert gas.

[0081] Step eight, performing a wafer boat saturation process on the wafer boat 300 in the chamber body 100 to ensure uniformity of the coating process of the silicon wafers carried by the wafer boat 300 .

[0082] The present application also discloses a semiconductor process equipment, and the disclosed semiconductor process equipment includes the semiconductor process chamber disclosed in the above embodiment.

[0083] The semiconductor process equipment disclosed in the embodiment of the present application can better achieve the cleaning of the film layer on the outermost boat page 310 of the wafer boat 300 by setting the semiconductor process chamber disclosed in the above embodiment.

[0084] The above embodiments of the present invention focus on the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

[0085] The embodiments of the present invention are described above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned specific implementation modes, which are merely illustrative rather than restrictive. Under the guidance of the present invention, ordinary technicians in this field can also make many forms without departing from the scope of protection of the present invention and the claims, all of which are within the protection of the present invention.

Claims

1. A semiconductor process chamber, characterized in that: The invention comprises a chamber body (100), a support assembly (200), a wafer boat (300), a first electrode assembly (400), a second electrode assembly (500) and an auxiliary cleaning tool (600), wherein: The support assembly (200) is disposed in the chamber body (100) and is used to support the wafer boat (300), the wafer boat (300) comprising a plurality of boat pages (310) arranged in sequence and spaced apart, and the semiconductor process chamber comprises a cleaning mode; When the semiconductor process chamber is in the cleaning mode, the wafer boat (300) is supported by the support assembly (200), the auxiliary cleaning tool (600) is opposite to and spaced apart from the outermost boat page (310) of the wafer boat (300), the outermost boat page (310) of the wafer boat (300) is electrically connected to the first electrode assembly (400), and the auxiliary cleaning tool (600) is electrically connected to the second electrode assembly (500).

2. The semiconductor process chamber according to claim 1, characterized in that: The plurality of boat pages (310) are divided into a first boat page group and a second boat page group, wherein the first boat page group includes the outermost boat pages (310) of the wafer boat (300); When the semiconductor process chamber is in the cleaning mode, the first boat-page group is electrically connected to the first electrode assembly (400), and the second boat-page group is electrically connected to the second electrode assembly (500).

3. The semiconductor process chamber according to claim 2, characterized in that: When the auxiliary cleaning tool (600) is electrically connected to the second electrode assembly (500), the second boat-leaf assembly is insulated and isolated from the second electrode assembly (500); When the second boat-to-page assembly is electrically connected to the second electrode assembly (500), the auxiliary cleaning tool (600) is insulated and isolated from the second electrode assembly (500).

4. The semiconductor process chamber according to claim 2, characterized in that: The semiconductor process chamber also includes a process mode; When the semiconductor process chamber is in the process mode, the first boat-page group is electrically connected to the first electrode assembly (400), the second boat-page group is electrically connected to the second electrode assembly (500), and the auxiliary cleaning tool (600) is insulated and isolated from the second electrode assembly (500).

5. The semiconductor process chamber according to claim 1, characterized in that: When the semiconductor process chamber is in the cleaning mode, the auxiliary cleaning tooling (600) is disposed on two opposite sides of the wafer boat (300).

6. The semiconductor process chamber according to claim 1, wherein: The support assembly (200) includes a first support rod (210) and a second support rod (220) that are spaced apart from each other, and the auxiliary cleaning tooling (600) is provided on both the first support rod (210) and the second support rod (220). When the first support rod (210) and the second support rod (220) support the crystal boat (300), the crystal boat (300) is located between the auxiliary cleaning tooling (600) on the first support rod (210) and the auxiliary cleaning tooling (600) on the second support rod (220).

7. The semiconductor process chamber according to claim 6, characterized in that: The auxiliary cleaning tool (600) comprises a fixing hoop (610), and the auxiliary cleaning tool (600) is fixed to the first support rod (210) or the second support rod (220) via the fixing hoop (610).

8. The semiconductor process chamber according to claim 6, characterized in that: The second electrode assembly (500) comprises a first radio frequency electrode (510), the first support rod (210) and the second support rod (220) are both provided with the first radio frequency electrode (510), and the first radio frequency electrode (510) extends along the extension direction of the first support rod (210) or the second support rod (220), and the auxiliary cleaning tool (600) on the first support rod (210) and the auxiliary cleaning tool (600) on the second support rod (220) are respectively electrically connected to the corresponding first radio frequency electrode (510).

9. The semiconductor process chamber according to claim 8, characterized in that: The support assembly (200) further comprises a first flange (230) and a second flange (240); the first end of the first support rod (210) and the first end of the second support rod (220) are both connected to the first flange (230); the second end of the first support rod (210) and the second end of the second support rod (220) are both connected to the second flange (240); the first flange (230) comprises an electrode feeding structure (231); the first end of the first radio frequency electrode (510) is connected to the electrode feeding structure (231); and the second end of the first radio frequency electrode (510) is connected to the auxiliary cleaning tooling (600).

10. The semiconductor process chamber according to claim 1, wherein: When the semiconductor process chamber is in the cleaning mode, the auxiliary cleaning tool (600) is detachably connected to the outermost boat page (310) of the wafer boat (300).

11. The semiconductor process chamber according to claim 10, characterized in that: The plurality of boat pages (310) are divided into a first boat page group and a second boat page group, the first boat page group includes the outermost boat pages (310) of the wafer boat (300), and the semiconductor process chamber further includes a process mode; When the semiconductor process chamber is in the cleaning mode, the first boat-page group is electrically connected to the first electrode assembly (400), the second boat-page group is electrically connected to the second electrode assembly (500), and / or the auxiliary cleaning tool (600) is electrically connected to the second electrode assembly (500); When the semiconductor process chamber is in the process mode, the auxiliary cleaning tool (600) is separated from the wafer boat (300).

12. The semiconductor process chamber according to claim 1, wherein: The auxiliary cleaning tool (600) is a non-hollow plate-shaped structure. In the direction perpendicular to the surface of the non-hollow plate-shaped structure, the projection of the outer edge contour of the auxiliary cleaning tool (600) is located outside the projection of the outermost boat leaf (310) of the crystal boat (300).

13. The semiconductor process chamber according to claim 1, wherein: The auxiliary cleaning tool (600) is made of metal or graphite.

14. The semiconductor process chamber according to claim 1, wherein: The semiconductor process chamber further comprises a radio frequency power supply (700), the first electrode assembly (400) and the second electrode assembly (500) are both connected to the radio frequency power supply (700), the power frequency output by the radio frequency power supply (700) is between 20 kHz and 400 kHz, and the power output by the radio frequency power supply (700) is between 10 kW and 30 kW.

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