Heater block and substrate heating apparatus including same

Abstract

The present invention relates to a heater block capable of accurately controlling a heating temperature and a substrate heating apparatus including the same. The heater block may include a first laser module having a plurality of laser cells; the second laser module is provided with a plurality of laser cells and is arranged around the first laser module; and a first power supply section and a second power supply section for independently supplying power to the first laser module and the second laser module, respectively, in which at least one of the first laser module and the second laser module is divided into a plurality of control regions each including one or more laser cells, the one or more laser cells share an input terminal to which power is input, and the plurality of control regions are controlled independently of each other.

Description

Technical Field

[0001] The present invention relates to a heater block and a substrate heating device including the same, and more particularly to a heater block capable of accurately controlling a heating temperature and a substrate heating device including the same. Background Art

[0002] Semiconductor devices are generally manufactured by repeatedly performing unit processes for processing a substrate, such as ion implantation, thin film deposition, and heat treatment. The unit process requires processing the substrate at a predetermined processing temperature by supplying heat energy. Specifically, since the time for performing the heating process is short when the substrate is heated to the predetermined processing temperature using light energy, a heating process using light energy is widely used because side effects such as impurities are minimized.

[0003] In a conventional substrate heating device, a heat treatment is performed by a heater block including a plurality of halogen lamps while the substrate is in a chamber, and the temperature of the substrate is measured in a non-contact manner using a temperature measuring device such as a pyrometer. The pyrometer can collect radiation energy emitted from the substrate and measure the temperature of the substrate in a non-contact manner based on a black body radiation temperature relationship. The temperature measured by the temperature measuring device is fed back to the heater block through a heating control unit to control the temperature of the heater block.

[0004] The silicon wafer has a semi-transparent transmittance at a temperature of 600° C. or less. When the silicon wafer having a characteristic of transmitting light in a low temperature range due to its material properties is used as a substrate, a portion of the light emitted from the halogen lamp is transmitted through the substrate at a substrate temperature of 600° C. or less. Here, when a pyrometer having a measurement wavelength band of 0.9 μm to 1 μm measures a portion of the light of the halogen lamp having a radiation wavelength of 0.4 μm to 6 μm, which portion is transmitted through the substrate, the temperature of only the substrate may not be accurately measured, and a temperature measurement error occurs.

[0005] In addition, since the halogen lamp may not be divided into a plurality of control areas, the halogen lamp may not be further accurately controlled for each control area. Therefore, a heater block that controls each control area that is smaller than the control area of ​​the halogen lamp is required.

[0006] (Patent Document 1) Korean Patent No. 10-0974013 Summary of the invention

[0007] Technical issues

[0008] The present invention provides a heater block capable of controlling a heating temperature in each of a plurality of subdivided control areas to improve temperature uniformity of a substrate and a substrate heating device including the same.

[0009] Technical Solutions

[0010] According to an embodiment of the present invention, a heater block includes: a first laser module having a plurality of laser cells; a second laser module having a plurality of laser cells and arranged around the first laser module; and a first power supply unit and a second power supply unit configured to independently supply power to the first laser module and the second laser module, respectively. Here, at least one of the first laser module and the second laser module is divided into a plurality of control areas each consisting of one or more laser cells, the one or more laser cells share an input terminal to which power is input, and the plurality of control areas are controlled independently of each other.

[0011] The control regions of the first laser module and the second laser module may be divided into different shapes.

[0012] A plurality of second laser modules may be provided, and the second laser modules may be arranged around the first laser module using the first laser module as a center.

[0013] The first laser module may be divided into a central control area and an edge control area, and the second laser module may be equally divided into a first control area and a second control area.

[0014] The first control area and the second control area may be disposed at different distances from the first laser module.

[0015] Each of the first control areas and the second control areas of the plurality of second laser modules may be grouped according to a distance from the first laser module.

[0016] The first power supply unit may independently supply power to each of the central control area and the edge control area, and the second power supply unit may independently supply power to each of the group consisting of the first control area and the group consisting of the second control area.

[0017] Each of the first laser module and the second laser module may have a polygonal shape.

[0018] The laser unit cell may include a vertical-cavity surface-emitting laser (VCSEL).

[0019] The heater block may further include a reflector unit configured to reflect at least a portion of light emitted from the first laser module and the second laser module in a predetermined direction by surrounding an edge of each of the first laser module and the second laser module.

[0020] According to another exemplary embodiment of the present invention, a substrate heating device includes: a substrate support configured to support a substrate; and a heater block according to an embodiment of the present invention, disposed to face the substrate support and to heat the substrate by irradiating a first surface of the substrate with transmitted light.

[0021] The substrate heating apparatus may further include a pyrometer provided at a second surface side of the substrate opposite to the first surface to measure a temperature of the substrate.

[0022] A plurality of pyrometers may be provided, and the plurality of pyrometers may be arranged to respectively correspond to a plurality of virtual circles having different radii centered on the first laser module.

[0023] The substrate heating apparatus may further include a heating control unit configured to control each of the control areas according to a distance from each of the virtual circles based on a temperature measured by each of the plurality of pyrometers.

[0024] According to another exemplary embodiment of the present invention, a method for heating a substrate includes: disposing the substrate to face a heater block, the heater block including a first laser module and a second laser module each independently supplied with power; irradiating a first surface of the substrate facing the heater block with light by the first laser module and the second laser module; and measuring a temperature of the substrate by a pyrometer disposed at a second surface side of the substrate opposite to the first surface. Here, at least one of the first laser module and the second laser module is divided into a plurality of control areas that are independently controlled from each other.

[0025] The first laser module can be divided into a central control area and an edge control area, the second laser module can be divided into a first control area and a second control area, and a plurality of second laser modules can be provided, and the first laser module can be used as the center and arranged around the first laser module so that the distance from the first laser module to each of the first control area and the second control area is different.

[0026] The method may further include grouping and controlling the first control areas and the second control areas of the plurality of second laser modules respectively according to distances from the first laser module.

[0027] According to the grouping of the first control area and the second control area, a plurality of pyrometers are provided to correspond to a plurality of virtual circles with different radii centered on the first laser module, respectively, and the grouping and the control can control each of the control areas of each group according to the distance from each of the virtual circles based on the temperature measured by each of the plurality of pyrometers.

[0028] Beneficial effects

[0029] According to an embodiment of the present invention, the heating block can independently supply power to the first laser module and the second laser module through the first power supply unit and the second power supply unit, respectively, so that the first laser module and the second laser module can be controlled independently of each other. Therefore, the heating temperature of each position of the first laser module and the second laser module can be adjusted, and the heating uniformity of the object to be heated (e.g., the substrate) can be improved. In addition, since at least one of the first laser module and the second laser module is divided into the plurality of control areas and is controlled independently of each other, the control area can be subdivided, and the heating uniformity of the object to be heated can be further improved.

[0030] Here, since the divided shape of the control area is distinguished into concentric division and radial division between the first laser module and the second laser module, the heating temperature can be accurately controlled by subdividing the control area in the radial direction from the center of the heater block. Here, since the first control area and the second control area of ​​the second laser module disposed around the first laser module are arranged at different distances from the first laser module, and the first control areas and the second control areas of the plurality of second laser modules are grouped according to the distance from the first laser module, the plurality of first control areas and the plurality of second control areas can be efficiently controlled for each group forming concentric circles centered on the first laser module. Therefore, the temperature uniformity of the object to be heated by heating can be improved.

[0031] Furthermore, by using VCSELs in laser cells, power consumption can be reduced due to high energy efficiency compared to conventional halogen lamps, and the heater block according to exemplary embodiments can effectively control optical properties due to light directness and ease of emitting light having a specific wavelength.

[0032] Furthermore, by controlling the heating temperature of the first laser module and the second laser module using the temperature measured by the pyrometer, the substrate heating device including the heater block of the present invention can improve the temperature uniformity of the substrate during the process. Specifically, since at least one of the first laser module and the second laser module is divided into the plurality of control areas so that the control area is subdivided, the temperature uniformity of the substrate can be further improved. Here, since the plurality of pyrometers are provided with the plurality of virtual circles having different radii respectively arranged to correspond to different distances from the first laser module, and the first control areas and the second control areas by the plurality of second laser modules are grouped according to the distance from the first laser module, the plurality of first control areas and the plurality of second control areas can be controlled for each group forming concentric circles centered on the first laser module. Thus, the plurality of first control areas and the plurality of second control areas can be accurately controlled for each group according to the distance from each virtual circle based on the temperature respectively measured by the plurality of pyrometers, and thus process characteristics such as excellent temperature uniformity of the substrate can be improved.

[0033] Meanwhile, when VCSEL is used in the laser unit cell of the heater block, by irradiating laser light having a main emission wavelength band different from the measurement wavelength band of the pyrometer, the temperature of the substrate can be accurately measured even in a low temperature region below 600° C., and the temperature of the substrate can be precisely controlled. Therefore, the substrate can be prevented from being damaged by ensuring the temperature uniformity of the substrate, and the reliability of the low temperature process at a temperature equal to or less than 600° C. can be ensured. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 is a schematic cross-sectional view showing a heater block according to an embodiment of the present invention.

[0035] Figure 2 2 is a cross-sectional view showing division of a first laser module and a second laser module according to an embodiment of the present invention.

[0036] Figure 3 is a cross-sectional view showing the arrangement of a first laser module and a second laser module according to an embodiment of the present invention.

[0037] Figure 4 is a diagram showing a reflector unit according to an embodiment of the present invention.

[0038] Figure 5 is a schematic cross-sectional view showing a substrate heating device according to another embodiment of the present invention.

[0039] Figure 6 is a cross-sectional view showing the arrangement of a pyrometer according to another embodiment of the present invention.

[0040] Figure 7is a flow chart showing a method for heating a substrate according to yet another embodiment of the present invention. DETAILED DESCRIPTION

[0041] Hereinafter, specific embodiments will be described in more detail with reference to the accompanying drawings. However, the present invention can be implemented in different forms and should not be construed as being limited to the embodiments described herein. Specifically, these embodiments are provided to make this disclosure thorough and complete and to fully convey the scope of the present invention to those skilled in the art. In each possible case, in the specification and the accompanying drawings, the same reference numerals are used to refer to the same or similar components. In the drawings, the sizes of layers and regions are exaggerated for clarity of illustration. The same reference numerals in the accompanying drawings represent the same components, and therefore will not be described in detail.

[0042] Figure 1 is a schematic cross-sectional view showing a heater block according to an embodiment of the present invention.

[0043] Reference Figure 1 According to an exemplary embodiment, a heater block (100) includes: a first laser module (110) including a plurality of laser cells (10); a second laser module (120) including the plurality of laser cells (10) and arranged around the first laser module (110); and a first power supply unit (130) and a second power supply unit (140) for independently supplying power to the first laser module (110) and the second laser module (120), respectively.

[0044] The first laser module (110) may include the plurality of laser cells (10) and may provide light energy for heating. For example, the first laser module (110) may be disposed (or positioned) at the center (part) of the heater block (100), and the plurality of laser cells (10) may be arranged in a two-dimensional manner to form an array. Here, the plurality of laser cells (10) may include semiconductor laser diodes, respectively, and may be formed in the form of a single wafer or by mounting a plurality of wafers.

[0045] The second laser module (120) may include a plurality of laser cells (10), may provide light energy for heating as in the first laser module (110), and may be disposed around the first laser module (110). For example, in the second laser module (120), the plurality of laser cells (10) may be arranged in a two-dimensional manner to form an array, and the plurality of laser cells (10) each including a semiconductor laser diode may be formed in the form of a single wafer or by mounting a plurality of wafers. Here, although the second laser module (120) may have the same laser cells (10), the same number of laser cells (10), and the same arrangement (form) of laser cells (10) as the first laser module (110), exemplary embodiments are not limited thereto. The second laser module (120) may have various configurations as long as the second laser module (120) can effectively provide light energy for heating.

[0046] Here, the second laser module (120) may be disposed around the first laser module (110). Specifically, the second laser module (120) may be disposed around the first laser module (110) disposed at the center of the heater block (100), and may be disposed at an edge (portion) of the heater block (100).

[0047] Each of the first laser module (110) and the second laser module (120) may have various shapes such as a polygon such as a square or hexagon, a circle, an oval, or an arc.

[0048] The first power supply unit (130) and the second power supply unit (140) can supply power to the first laser module (110) and the second laser module (120) respectively and independently. The first power supply unit (130) can supply power to the first laser module (110), and the second power supply unit (140) can supply power to the second laser module (120). Thus, the first laser module (110) and the second laser module (120) can be independently controlled. That is, each of the first laser module (110) and the second laser module (120) can have an independent power (power supply unit).

[0049] For example, the first laser module (110) may be disposed at the center of the heater block (100) to (mainly) heat the center (portion) of an object to be heated, such as a substrate (50), and the second laser module (120) may be disposed at the edge of the heater block (100) to (mainly) heat the edge (portion) of the object to be heated. Here, although heat loss (almost) does not occur in the center portion of the object to be heated because the center portion of the object to be heated is surrounded by the edge heated by the second laser module (120), heat loss may occur in the edge of the object to be heated because the outer portion of the edge of the object to be heated is exposed to vacuum or air. Therefore, when the object to be heated is heated by controlling the first laser module (110) and the second laser module (120) at the same heating temperature, the edge of the object to be heated may have a temperature lower than that of the center portion of the object to be heated, and temperature non-uniformity may occur between the center and the edge of the object to be heated.

[0050] Therefore, the heater block (100) according to the embodiment of the present invention can supply power to the first laser module (110) and the second laser module (120) separately and independently through the first power supply unit (130) and the second power supply unit (140) to control the first laser module (110) and the second laser module (120) independently of each other. Therefore, by controlling the heating temperature of the first laser module (110) and the second laser module (120), each of the central part and the edge part of the object to be heated can be (independently) heated to improve the heating uniformity of the object to be heated (e.g., the substrate 50).

[0051] Figure 2 is a cross-sectional view showing the division of the first laser module and the second laser module according to an embodiment of the present invention. Figure 2 (a) shows the division of the first laser module, Figure 2 (b) shows the first type division of the second laser module, and Figure 2 (c) shows the second type division of the second laser module.

[0052] Reference Figure 2At least one of the first laser module (110) and the second laser module (120) (110 and / or 120) can be divided into a plurality of control areas (110a and 110b and / or 120a and 120b) each consisting of one or more laser cells (10), the one or more laser cells (10) share an input terminal (11 and 12) to which power is supplied, and the plurality of control areas (110a and 110b or 120a and 120b) can be independently controlled. At least one of the first laser module (110) and the second laser module (120) (110 and / or 120) can include a plurality of (external) input terminals (11 and 12) to which power is supplied from the outside (i.e., the first power supply unit and / or the second power supply unit). Here, the laser cells (10) sharing the same input terminal (11 and 12) among the plurality of input terminals (11 and 12) can be divided into the plurality of control areas (110a and 110b and / or 120a and 120b), and the laser cells (10) of one control area (110a or 110b and / or 120a or 120b) and the laser cells (10) of another control area (110b or 110a and / or 120b or 120a) can be electrically connected to different input terminals (11 and 12).

[0053] That is, at least one laser module (110 and / or 120) of the first laser module (110) and the second laser module (120) can be divided into a plurality of control areas (110a and 110b and / or 120a and 120b) having different input terminals (11 and 12), and the laser cells (10) in the corresponding control areas (110a, 110b, 120a and 120b) can share the same input terminal (11 or 12). Therefore, the plurality of control areas (110a and 110b and / or 120a and 120b) can include at least one or more laser cells (10) sharing each input terminal (11 or 12), and the input terminal (11 or 12) can be independently controlled according to whether power is supplied.

[0054] Here, the first laser module (110) and the second laser module (120) may have the same or different numbers of control regions (110a, 110b, 120a, and 120b). In addition, since only one of the first laser module (110 or 120) and the second laser module (120) is divided, the divided laser module (110 or 120) may have two or more control regions (110a and 110b or 120a and 120b), and since the entire laser module (120 or 110) is a control region, the undivided laser module (110 or 120) may have a single control region (120a or 110a).

[0055] Here, the input terminals (11 and 12) may include a positive (+) (electrode) terminal (11) and a negative (-) (electrode) terminal (12). For example, one control region (110a or 110b or 120a or 120b) may include at least one laser unit cell (10) sharing a first positive terminal (11a) and a first negative terminal (12a), and another control region (110b or 120a or 120b or 110a) may include at least one laser unit cell (10) sharing a second positive terminal (11b) and a second negative terminal (12b).

[0056] Therefore, the heater block (100) according to the embodiment of the present invention can divide at least one laser module (110 and / or 120) of the first laser module (110) and the second laser module (120) into the plurality of control areas (110a and 110b and / or 120a and 120b), and can control the divided control areas independently of each other to subdivide the control areas (110a, 110b, 120a and 120b), thereby further improving the heating uniformity of the object to be heated.

[0057] Here, the division shapes of the control areas (110a, 110b, 120a and 120b) of the first laser module (110) and the second laser module (120) may be different. The division shapes may include undivided shapes. Different division shapes may include a situation where at least one of the first laser module (110) and the second laser module (120) is divided and the other is not divided.

[0058] For example, when all the first laser modules (110) and the second laser modules (120) are divided, the first laser modules (110) may be divided concentrically, and the second laser modules (120) may be divided radially. Here, concentric division refers to a feature of dividing the center of the object to be divided (e.g., the first laser module) concentrically (i.e., the same center) so that the inside and the outside are divided based on a line parallel to the edge of the object to be divided (this forms a virtual figure having the same shape as the object to be divided), and radial division refers to a feature of dividing both sides of a line (or lines) contacting the edge of the object to be divided (e.g., the second laser module) based on a line (or lines) passing through the center of the object to be divided and contacting the edge of the object to be divided. Here, when the second laser module (120) has a circular shape, the two sides may be divided based on the diameter (or radius) of the circle. Furthermore, when the second laser module (120) has a polygonal shape having an even number of corners, the two sides may be divided based on a line connecting sides (centers thereof) and sides (centers thereof) or a line connecting vertices and vertices of the polygon, and when the second laser module (120) has a polygonal shape having an odd number of corners, the two sides may be divided based on a line connecting vertices of the polygon and centers of the sides.

[0059] The first laser module (110) may be disposed at the center of the heater block (100) and may be concentrically divided, and the second laser module (120) may be disposed at the edge of the heater block (100) and may be radially divided. Thus, by subdividing the control areas (110a, 110b, 120a, and 120b) according to the distance from the center of the heater block (100), the heating temperature may be precisely controlled for each control area (110a, 110b, 120a, and 120b).

[0060] Therefore, the heater block (100) according to the embodiment of the present invention can be subdivided in the radial direction from the center of the heater block (100) to accurately control the heating temperature by differentiating the division shape of the control area (110a, 110b, 120a and 120b) between the first laser module (110) and the second laser module (120) into concentric division and radial division.

[0061] Figure 3 is a cross-sectional view showing the arrangement of the first laser module and the second laser module according to an embodiment of the present invention. Figure 3 (a) shows an exemplary embodiment in which only the first laser module is divided, and Figure 3 (b) shows another exemplary embodiment in which all the first laser modules and the second laser modules are divided.

[0062] Reference Figure 3 , a plurality of second laser modules (120) may be provided, and may be arranged around the first laser module (110) using the first laser module (110) as the center. That is, the second laser module (120) may surround the first laser module (110) along the circumference of the first laser module (110). For example, only one first laser module (110) may be provided at the center (or central portion) of the heater block (100), and the plurality of second laser modules (120) may be provided at the edge of the heater block (100) to surround the circumference of the first laser module (110). Here, although the second laser module (120) may surround the first laser module (110) using only one shell, the second laser module (120) may surround the first laser module (110) using a plurality of shells (e.g., a double shell and a triple shell), and the plurality of shells may be provided such as a plurality of shells depending on the size and shape of the object to be heated and / or the heater block (100). Figure 3 As shown in the figure, concentric circles are formed around the first laser module (110). Thus, the control areas (110a, 110b, 120a and 120b) can be subdivided in the radial direction from the center of the heater block (100). In addition, the second power supply unit (140) can independently supply power to each of the plurality of second laser modules (120), or can jointly supply power to the plurality of second laser modules (120). Here, the second power supply unit (140) may include a plurality of power supply units or one power supply unit, and power is distributed from the plurality of power supply units or the one power supply unit to the plurality of second laser modules (120).

[0063] Here, the first laser module (110) can be divided into a central control area (110a) and an edge control area (110b), and the second laser module (120) can be divided into a first control area (120a) and a second control area (120b). Figure 2 As shown in (a), the first laser module (110) can be concentrically divided into a central control area (110a) and an edge control area (110b). Here, the central control area (110a) can be set inside the heater block (100) and at the center of the heater block (100), and the edge control area (110b) can be set outside the central control area (110a). Therefore, even in the first laser module (110), the control areas (110a and 110b) can be subdivided in the radial direction from the center of the heater block (100).

[0064] The second laser module (120) can be radially divided into a first control area (120a) and a second control area (120b), the first control area (120a) and the second control area (120b) can be symmetrical to each other, and the shape, surface area and number of the laser cells (10) can be equal to each other. For example, when the second laser module (120) has a hexagonal shape, it can be as follows Figure 2 As shown in (b) of FIG. 1 , the second laser module (120) is divided equally into a first control region (120a) and a second control region (120b) based on a line connecting the vertices, or as shown in FIG. Figure 2 As shown in (c), the second laser module (120) is divided into a first control area (120a) and a second control area (120b) based on the lines connecting the opposite sides. Figure 2 As shown in (c), the first control area (120a) and the second control area (120b) are divided (or bisected) based on a line connecting the centers of the sides, but the first control area (120a) and the second control area (120b) may also be divided based on a line connecting the sides, wherein the sides and the sides are inclined to form a predetermined angle with the line connecting the centers of the sides.

[0065] Here, if Figure 3 As shown in (b), the first control region (120a) and the second control region (120b) may be disposed at different distances from the first laser module (110). Here, one of the first control region (120a) and the second control region (120b) may be disposed close to the first laser module (110), and the other control region (120b or 120a) may be disposed away from the first laser module (110).

[0066] For example, the plurality of second laser modules (120) may be arranged around the first laser module (110) so that the first control region (120a) is arranged close to the first laser module (110) toward the first laser module (110), and the second control region (120b) is arranged relatively far from the first laser module (110) (in the radial direction). Here, for each (arrangement) position of the second laser module (120), the first control region (120a) may divide (or bisect) the second laser module (120) based on a line passing through the center of the second laser module (120) and parallel to a tangent of a (concentric) circle centered on the first laser module (110). However, exemplary embodiments are not limited thereto. For example, the second laser module (120) may be divided into the first control region (120a) and the second control region (120b) as long as the second laser module (120) is arranged so that the first control region (120a) faces the first laser module (110).

[0067] The first power supply unit (130) may include a central power supply unit (130a) that supplies power to the central control area (110a) and an edge power supply unit (130b) that supplies power to the edge control area (110b), and the second power supply unit (140) may include a first power supply unit (140a) that supplies power to the first control area (120a) and a second power supply unit (140b) that supplies power to the second control area (120b). Here, the central power supply unit (130a) may supply power to the central control area (110a), and the edge power supply unit (130b) may supply power to the edge control area (110b). Thus, since each of the central control area (110a) and the edge control area (110b) has an independent power supply (unit), the central control area (110a) and the edge control area (110b) can be controlled independently of each other.

[0068] In addition, the first power supply unit (140a) can supply power to the first control area (120a), and the second power supply unit (140b) can supply power to the second control area (120b). Thus, since each of the first control area (120a) and the second control area (120b) has an independent power supply (unit), the first control area (120a) and the second control area (120b) can be controlled independently of each other. Here, the first power supply unit (140a) can supply power to each of the first control areas (120a) of the plurality of second laser modules (120). For example, the first power supply unit (140a) can independently supply power to each of the first control areas (120a), or can jointly supply power to two or more groups of first control areas (120a) by grouping two or more first control areas (120a). In addition, the second power supply unit (140b) can supply power to each of the second control areas (120b) of the plurality of second laser modules (120). For example, the second power supply unit (140b) can independently supply power to each of the second control areas (120b), or can jointly supply power to two or more groups of second control areas (120b) by grouping the two or more second control areas (120b).

[0069] Here, the first control areas (120a) and the second control areas (120b) of the plurality of second laser modules (120) can be grouped according to the distance from the first laser module (110), and the first control areas (120a) and the second control areas (120b) can be controlled (simultaneously) for each group. Here, the first control areas (120a) and the second control areas (120b) of the plurality of second laser modules (120) can be grouped into two or more (or two or more first control areas and two or more second control areas) according to the distance from the first laser module (110), and the first control areas (120a) and the second control areas (120b) can be controlled for each group disposed at different distances from the first laser module (110) (the plurality of first control areas and the plurality of second control areas). For example, a plurality of first control regions (120a) disposed at the same or similar distance from the laser module (110) may be grouped, and a plurality of second control regions (120b) disposed at the same or similar distance from the laser module (110) may be grouped. Here, the first control regions (120a) or the second control regions (120b) that form concentric circles around the first laser module (110) or that pass through (or span) the same concentric circle (having the same radius) may be grouped. Here, each first control region (120a) and each second control region (120b) that forms each group may be (electrically) connected to each other.

[0070] For example, the first control areas (120a) of the second laser modules (120) of the same housing may be grouped, and the second control areas (120b) of the second laser modules (120) of the same housing may be grouped. That is, the first control areas (120a) and the second control areas (120b) of the second laser modules (120) of the first housing (or layer) may be grouped, and the first control areas (120a) and the second control areas (120b) of the second laser modules (120) of the double housing may be grouped. Here, the first control areas (120a) or the second control areas (120b) of the second laser modules (120) of the n-layer housing depending on the number of layers (or housings) of the second laser modules (120) surrounding the first laser module (110) may be grouped.

[0071] Furthermore, when the second laser modules (120) are not divided, two or more second laser modules (120) disposed at the same or similar distance from the first laser module (110) may be grouped, and second laser modules (120) forming concentric circles around the first laser module (110) or passing through the same concentric circle may be grouped.

[0072] In addition, the first power supply unit (130) can independently supply power to the central control area (110a) and the edge control area (110b), and the second power supply unit (140) can independently supply power to each of the group consisting of the first control area (120a) and the group consisting of the second control area (120b). The first power supply unit (130) can independently supply power to each of the central control area (110a) and the edge control area (110b), the central power supply unit (130a) of the first power supply unit (130) can supply power to the central control area (110a), and the edge power supply unit (130b) of the first power supply unit (130) can supply power to the edge control area (110b). Thus, each of the central control area (110a) and the edge control area (110b) can be controlled independently of each other.

[0073] The second power supply unit (140) can independently supply power to each of the group consisting of the first control area (120a) and the group consisting of the second control area (120b), the first power supply unit (140a) of the second power supply unit (140) can supply power to the group consisting of the first control area (120a), and the second power supply unit (140b) of the second power supply unit (140) can supply power to the group consisting of the second control area (120b). Thus, each of the group consisting of the first control area (120a) and the group consisting of the second control area (120b) can be independently controlled, and the heating temperature can be controlled for each group consisting of the plurality of first control areas (120a) and the plurality of second control areas (120b) disposed at different distances from the first laser module (110).

[0074] For example, for each group, the plurality of first control areas (120a) and the plurality of second control areas (120b) may be electrically connected. Here, the first power supply unit (140a) may be provided with a plurality of first power supply units (140a) to supply power to each group consisting of the first control areas (120a), and the second power supply unit (140b) may also be provided with a plurality of second power supply units (140b) to supply power to each group consisting of the second control areas (120b). The first power supply unit (140a) may supply power to each group consisting of the first control areas (120a) by distributing power from one first power supply unit (140a), and the second power supply unit (140b) may also supply power to each group consisting of the first control areas (120a) by distributing power from one second power supply unit (140b), and a switch unit (not shown) may be provided for each distribution line and the switch unit may be controlled for each group.

[0075] Therefore, by arranging the first control areas (120a) and the second control areas (120b) of the plurality of second laser modules (120) surrounding the first laser module (110) at different distances from the first laser module (110) along the circumference of the first laser module (110), the heater block (100) according to the embodiment of the present invention can group the first control areas (120a) and the second control areas (120b) of the plurality of second laser modules (120) according to the distance from the first laser module (110). Thus, the plurality of first control areas (120a) and the plurality of second control areas (120b) (i.e., (each) group consisting of the first control areas and (each) group consisting of the second control areas) can be efficiently (or effectively) controlled for each group forming a concentric circle centered on the first laser module (110) or passing through the same concentric circle, and the temperature uniformity of the object to be heated by heating can be improved.

[0076] Here, each of the first laser module (110) and the second laser module (120) may have a polygonal shape, and an edge of each of the first laser module (110) and the second laser module (120) may form a polygonal shape. Here, the second laser module (120) may be disposed at each of the sides of the first laser module (110), and one side of the first laser module (110) and one side of the second laser module (120) may be arranged parallel to each other.

[0077] Since the first laser module (110) and the second laser module (120) are arranged in various ways according to the size and shape of the object to be heated (e.g., a substrate), it is necessary to expand the area provided by the first laser module (110) and the second laser module (120) in the heater block (100). In addition, since light emission (i.e., laser irradiation) does not occur in the spaced space when a spaced space is generated between the first laser module (110) and the second laser module (120) and / or between the plurality of second laser modules (120) due to the reflector unit (150), the spaced space inevitably presents a light emission state and a temperature distribution different from the light emission state and the temperature distribution of the portion in which the first laser module (110) and / or the second laser module (120) are arranged. For the above reasons, the spaced space (or the spaced distance) between the first laser module (110) and the second laser module (120) and / or between the plurality of second laser modules (120) needs to be maintained in a two-dimensional manner and constantly. To this end, each of the first laser module (110) and the second laser module (120) may have a polygonal shape. When each of the first laser module (110) and the second laser module (120) has a polygonal shape, by arranging the first laser module (110) and the second laser module (120) in a two-dimensional manner so that the respective sides of the first laser module (110) and the second laser module (120) are adjacent to each other in parallel, the spacing space can be uniformly ensured over the entire (emission) surface of the heater block (100). On the other hand, when each of the first laser module (110) and the second laser module (120) has a circular shape, in the case of being arranged in a two-dimensional manner, the first laser module (110) and the second laser module (120) inevitably present different spacing distances (or spacing spaces) depending on the direction.

[0078] In addition, the first laser module (110) and the second laser module (120) may have the same shape (or form). When the first laser module (110) and the second laser module (120) that need to be enlarged according to the shape and size of the object to be heated have the same shape, a planar heating body (i.e., a heater block) can be formed by simply arranging (or assembling) the first laser module (110) and the plurality of second laser modules (120) on a plane.

[0079] For example, each of the first laser module (110) and the second laser module (120) may have a hexagonal shape, and one second laser module may be disposed on each side of the first laser module (110) so that the sides are adjacent to each other in parallel. When the object to be heated is a circular substrate (50) such as a wafer, the heater block (100) may have a circular shape according to the shape of the substrate (50), and the first laser module (110) and the plurality of second laser modules (120) may be arranged so that the outline of the arrangement (form) of the first laser module (110) and the plurality of second laser modules (120) has a shape similar to a circular shape in terms of temperature uniformity of the object to be heated. Here, when the edge of each of the first laser module (110) and the second laser module (120) has a hexagonal shape, the first laser module (110) and the second laser module (120) can be easily enlarged according to the size and shape of the object to be heated while uniformly maintaining the overall spacing space, and the outline of the arrangement (form) of the first laser module (110) and the plurality of second laser modules (120) can have a shape similar to a circular shape. Here, the heater block (100) corresponding to a 4-inch wafer may include one hexagonal first laser module (110) and six hexagonal second laser modules (120) respectively arranged on each side of the first laser module (110). In addition, the heater block (100) corresponding to a 12-inch wafer may include one hexagonal first laser module (110) and sixty hexagonal second laser modules (120) arranged around the first laser module (110). Here, the sixty second laser modules (120) can use four shells to surround the circumference of the first laser module, and the four shells include a first shell containing six second laser modules (120), a double shell containing twelve second laser modules (120), a triple shell containing eighteen second laser modules (120), and a quadruple shell containing twenty-four second laser modules (120).

[0080] On the other hand, the honeycomb structure formed by arranging the hexagonal first laser module (110) and the plurality of second laser modules (120) can include the minimum (or minimum number) (same as the number of corners) of second laser modules (120), and the second laser modules (120) include the vertices of the first laser modules (110) to surround the entire circumference of the first laser modules (110). Therefore, although the number of second laser modules (120) can be reduced to a minimum, the (average) density of the laser unit cells (10) (per unit area) can be increased, and the production cost (or manufacturing cost) of the heater block (100) can be reduced to improve the light emitting efficiency (or heating efficiency).

[0081] Furthermore, when the plurality of second laser modules (120) are arranged in parallel to each side of the first laser module (110), in the case of a polygon having fewer corners than a hexagon (e.g., a triangle, a rectangle, and a pentagon), the number of second laser modules (120) obtained by adding the number of vertices to the number of sides (or twice the number of corners) is required to surround an empty vertex because each vertex is empty. In the case of a polygon having more corners than a hexagon, although the same number of second laser modules (120) surrounds the entire perimeter of the first laser module (110), the number of second laser modules (120) may be greater than the number of second laser modules (120) surrounding the entire perimeter of the hexagonal first laser module (110). For example, eight rectangular second laser modules (120) are required to surround a rectangular first laser module (110) including its vertices, and ten pentagonal second laser modules (120) are required to surround a pentagonal first laser module (110) including its vertices. Furthermore, in the case of a triangular first laser module (110) and a triangular second laser module (120), twice the number of corners is 6, which is equal to the number of second laser modules (120) surrounding the hexagonal first laser module (110). In order to surround the triangular first laser module (110) including its vertices with only six second laser modules (120), the second laser modules (120) are arranged irregularly, and the sides of each second laser module (120) are not (mostly) adjacent to each other. In this case, the density of the laser unit cell (10) increases, and the light emission efficiency deteriorates.

[0082] However, in the honeycomb structure formed by arranging the hexagonal first laser module (110) and the plurality of hexagonal second laser modules (120), the second laser modules (120) can be regularly arranged using only six second laser modules (120), and the sides of the second laser modules (120) can also be adjacent to each other. Therefore, the density of the laser unit cell (10) can be increased, and the light emission efficiency can be improved.

[0083] The laser unit cell (10) may include a vertical cavity surface emitting laser (VCSEL).

[0084] Depending on the light emitting method, the semiconductor laser diode used in the laser unit (10) can be mainly divided into edge-emitting laser (EEL) and VCSEL. Unlike the side-emitting laser such as the existing distributed feedback laser diode (DFB LD) or Fabry-Perot laser diode (FP LD), the VCSEL has a structure that emits a laser beam in a direction perpendicular to the object to be heated (e.g., substrate 50). Since the laser beam is emitted in a direction perpendicular to the object to be heated, the VCSEL can have a circular symmetrical distribution and superior optical uniformity than the side-emitting laser. Since the wafer scale process and the manufacturing using a single silicon wafer (or circular substrate) can be implemented, low-cost laser manufacturing can be implemented. In addition, since the resonance distance is extremely short, the critical current can be reduced and the overall output can be reduced.

[0085] Specifically, in the substrate heating device 200, a surface light source having a wide area needs to be used as a heating light source. For this purpose, the laser unit cell (10) needs to be manufactured as a two-dimensional array type parallel light source. Since the side-emitting laser emits light through one side of the structure stacked on the substrate, it is difficult to manufacture the laser unit cell (10) as a two-dimensional array type parallel light source. However, since VCSEL only needs to form the structure stacked on the substrate into a desired structure, the desired two-dimensional array type parallel light source can be manufactured very easily.

[0086] In addition, since the VCSEL has a light source irradiation angle of about 20° to about 25° relative to the direction perpendicular to the light emitting surface, which is much narrower than the irradiation angle of 30° to 40° of a light emitting diode (LED), the VCSEL has excellent light straightness. Therefore, a two-dimensional array type parallel light source that can irradiate high-output and high-precision light onto an object to be heated and also emit uniform light can be manufactured.

[0087] For example, VCSEL can be configured by stacking a mirror layer, an active layer, and a mirror layer on a substrate to vertically emit a laser beam. Here, in the case of a short wavelength in the 850 nm band, gallium arsenide (GaAs) can be used as a substrate, and a distributed Bragg reflector (DBR) can be used as a mirror layer, in which a low refractive index and a high refractive index are alternately formed by a composition variation of aluminum (Al) of an aluminum gallium arsenide (AlGaAs) lattice matched with gallium arsenide (GaAs). In addition, the active layer can (mainly) use a gallium arsenide (GaAs) multi-quantum well structure to generate light having a desired wavelength.

[0088] Since the first laser module (110) and the second laser module (120) can be arranged in parallel with each other so that the distance between the light emitting surface and the substrate (50) is constant, thereby uniformly heating the substrate (50) as the object to be heated, the first laser module (110) and the second laser module (120) can be arranged as surface light sources having a size corresponding to the size of the substrate (50). To this end, the first laser module (110) and the second laser module (120) (in which the laser cells (10) including the VCSELs are arranged in a two-dimensional array) are arranged so that the second laser module (120) is located at the perimeter of the first laser module (110) using the first laser module (110) as the center, and the plurality of second laser modules (120) can be arranged corresponding to the size of the substrate (50).

[0089] Therefore, by using VCSEL in the laser unit cell (10), the heater block (100) according to the embodiment of the present invention can reduce power consumption compared to the conventional halogen lamp, and due to the light directness and the ease of emitting light having a specific wavelength, the heater block (100) according to the exemplary embodiment can effectively control the optical properties.

[0090] Figure 4 is a diagram showing a reflector unit according to an embodiment of the present invention. Here, Figure 4 (a) is a perspective view showing a reflector unit, and Figure 4 (b) is a cross-sectional view obtained by cutting the reflector unit along line AA'.

[0091] Reference Figure 4The heater block (100) according to an embodiment of the present invention may further include a reflector unit (150) surrounding an edge of each of the first laser module (110) and the second laser module (120) to reflect at least a portion of light emitted from the first laser module (110) and the second laser module (120) in a predetermined direction.

[0092] The reflector unit (150) may surround an edge of each of the first laser module (110) and the second laser module (120) to reflect at least a portion of light emitted from the first laser module (110) and the second laser module (120) in a predetermined direction and reflect at least a portion of the emitted light toward an object to be heated.

[0093] Although the laser unit (10) is superior to a light emitting diode (LED) in terms of light straightness, the laser unit (10) may not emit light completely perpendicular to the light emitting surface and has an irradiation angle of 20° to 25°. Therefore, part of the light emitted from the laser unit (10) is not incident on the object to be heated due to the high angle. Therefore, by using the reflector unit (150) to reflect the diffuse light of the light emitted from the first laser module (110) and the second laser module (120) toward the object to be heated, the optical efficiency can be maximized.

[0094] For example, the reflector unit (150) may have a plate shape and may include a recessed portion or a through-portion into which the first laser module (110) and the second laser module (120) are respectively inserted and mounted. Here, the reflector unit (150) may include a side part and a front part, the side part defining the recessed portion or the through-portion and being inclined with respect to the light emitting surface of each of the first laser module (110) and the second laser module (120), and the front part connected to the side part and parallel to the light emitting surface of each of the first laser module (110) and the second laser module (120). Here, the side of the reflector unit (150) may form an inclined reflective surface (151) that reflects the light emitted and diffused from the first laser module (110) and the second laser module (120) toward the object to be heated, and the front of the reflector unit (150) may form a front reflective surface (152) that reflects the light incident toward the heater block (100) again toward the object to be heated because part of the light emitted from the first laser module (110) and the second laser module (120) is reflected by the object to be heated. Here, the inclined reflective surface (151) may form an inclination angle of 80° to 90° with respect to the light emitting surface of each of the first laser module (110) and the second laser module (120).

[0095] Since the laser unit cell (10) has an irradiation angle (or emission angle) of 20° to 25° relative to the direction perpendicular to the light emitting surface, when the inclination angle of the inclined reflective surface (151) relative to the light emitting surface is 80° to 90°, the diffuse light can be effectively reflected toward the object to be heated. Since the light having an irradiation angle of 20° to 25° is obliquely incident on the inclined reflective surface (151) having an inclination angle of 80° to 90° and is reflected by the inclined reflective surface (151), the light can be focused at a high angle and incident on the object to be heated. On the other hand, since the light is incident on the inclined reflective surface (151) at a high angle and reflected by the inclined reflective surface (151) in the case where the (LED) has an irradiation angle of 30° to 40° relative to the direction perpendicular to the light emitting surface, when the light is obliquely incident on the object to be heated at a low angle and is reflected again, the light energy may not be effectively transmitted to the object to be heated.

[0096] When the inclined reflective surface (151) has an inclination angle of less than 80° relative to the light emitting surface of each of the first laser module (110) and the second laser module (120), the light emitted from the laser unit cell (10) and having excellent light straightness directly travels toward the object to be heated, rather than being irradiated to the inclined reflective surface (151). Therefore, since the light is not incident into the object to be heated at a high angle, light uniformity may be deteriorated. On the other hand, when the inclined reflective surface (151) has an inclination angle of more than 90° relative to the light emitting surface of each of the first laser module (110) and the second laser module (120), the inclined reflective surface (151) faces the first laser module (110) and / or the second laser module (120). Therefore, when the reflected light travels toward the first laser module (110) and / or the second laser module (120) again, optical loss occurs.

[0097] In addition, the inclined reflection surface (151) and / or the front reflection surface (152) may be coated with a metal reflection film to further improve the reflection efficiency. The body part of the reflector unit (150) may be made of an aluminum alloy having excellent thermal conductivity and mechanical strength, and the inclined reflection surface (151) and / or the front reflection surface (152) may be formed into a mirror surface by grinding. However, even after grinding, a microstructure may still exist on the surface causing diffuse reflection. For this reason, by coating the inclined reflection surface (151) and / or the front reflection surface (152) with a metal reflection film, the reflection efficiency can be further improved. Although the metal reflection film may be made of gold (Au) or aluminum (Al), the exemplary embodiment is not limited to the material of the metal reflection film. For example, the metal reflection film may be made of a metal material that is stable at high temperatures and performs mirror reflection.

[0098] Figure 5 is a schematic cross-sectional view showing a substrate heating device according to another embodiment of the present invention.

[0099] In the following, reference will be made to Figure 5 A substrate heating apparatus according to another exemplary embodiment of the present invention is explained in more detail, and features overlapping with those explained in the heater block according to the embodiment of the present invention will be omitted.

[0100] According to another exemplary embodiment of the present invention, a substrate heating device (200) may include: a substrate support (210) supporting a substrate (50); and a heater block (100) according to an embodiment of the present invention, facing the substrate support (210) and heating the substrate (50) by irradiating light to a first surface of the substrate (50).

[0101] The substrate support (210) may support the substrate (50), that is, the edge of the bottom surface of the substrate (50). Therefore, a portion (or area) of the bottom surface of the substrate that is not in contact with the substrate support (210) may be exposed. For example, the substrate support (210) may have a hollow shape having an open central portion. Therefore, when the substrate (50) is located on the substrate support (210), the edge of the bottom surface of the substrate (50) may be in contact with the substrate support (210), and the remaining portion may be exposed downward.

[0102] The heater block (100) may be a heater block (100) according to an exemplary embodiment. The heater block (100) may face the substrate supporter (210) and may heat the substrate (50) by irradiating a first surface (eg, a top surface) with light (ie, laser).

[0103] Here, the heater block (100) can be used to supply heat energy to the substrate (50), and the first laser module (110) and the second laser module (120) can irradiate the first surface of the substrate (50) with light. Here, since the heater block (100) is spaced upward from the substrate support (210), the light energy generated by the first laser module (110) and the second laser module (120) can be transmitted through the first surface of the substrate (50) located on the substrate support (210) to heat the substrate (50).

[0104] For example, the first laser module (110) and the second laser module (120) can provide light energy for heating the substrate (50), and can be respectively installed in a plurality of mounting grooves. The first laser module (110) and the second laser module (120) can be spaced apart from each other, and the arrangement structure and installation structure of the first laser module (110) and the second laser module (120) can be changed in various ways according to the shape and size of the substrate (50).

[0105] In addition, the heater block (100) may further include a window (not shown) disposed on the first laser module (110) and the second laser module (120). The window (not shown) may be disposed on the first laser module (110) and the second laser module (120) and between the substrate (50) and the first laser module (110) and the second laser module (120). Therefore, the window (not shown) may be used to transmit light emitted from the first laser module (110) and the second laser module (120) to provide light energy generated from the first laser module (110) and the second laser module (120) to the substrate (50).

[0106] The substrate heating device (200) according to the present invention can heat the substrate (50) for various processes, such as a process of performing heat treatment on the substrate (50) or a process of forming a thin film on the substrate (50). For example, the substrate heating device (200) can be a rapid thermal process (RTP) device that generates high temperature heat to quickly perform heat treatment on the substrate (50), and the substrate (50) can be a silicon wafer used in semiconductor devices or various objects to be processed that require heat treatment (for example, glass used in display devices such as liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs)).

[0107] Here, the substrate heating device (200) according to the exemplary embodiment may further include a chamber (240) having an internal space, and the chamber (240) may provide a process space (process space) separated from an external space due to the internal space and having a box shape. For example, a substrate support (210) may be installed in the internal space of the chamber (240) to support the substrate (50), and an inlet through which the substrate (50) is loaded and unloaded may be defined at one side of the chamber (240). Here, the substrate (50) may be loaded into the internal space of the chamber (240) through the inlet, and after the process is completed, the substrate (50) may be unloaded from the internal space of the chamber (240) to the outside of the chamber (240) through the inlet. As needed, a gas supply unit (not shown) for supplying a process gas into the internal space of the chamber (240) and / or a plasma generating unit (not shown) for activating the process gas may be connected to the chamber (240).

[0108] Figure 6 is a cross-sectional view showing the arrangement of a pyrometer according to another embodiment of the present invention.

[0109] Reference Figure 6 The substrate heating device (200) according to the present invention may further include a pyrometer (220) provided at a second surface side of the substrate (50) opposite to the first surface to measure the temperature of the substrate (50).

[0110] The pyrometer (220) may be disposed at a second surface side (e.g., bottom surface) of the substrate (50) facing the first surface (e.g., lower side of the substrate) to measure the temperature of the substrate (50). The pyrometer (220) may measure the temperature by detecting light incident from the substrate (50). For example, the pyrometer (220) may receive radiation light incident from the substrate (50), and may measure the radiation energy (or light amount) of the radiation light, and may be disposed at the lower side of the substrate (50) located on the substrate support (210) to obtain the radiation energy and the reflection from the facing portion, thereby measuring the temperature of each position (or each portion) of the substrate (50) at the corresponding position of (each of) the pyrometers (220). Here, the process of measuring the temperature by the pyrometer (220) using the light emitted from the object uses the blackbody radiation theory. Since the process is well known, it will not be described in detail.

[0111] In general, the pyrometer (220) measures temperature using a wavelength band of 0.9 micrometers to 1 micrometer, the measurement (temperature) range is about 400°C to 1,150°C, and the transmittance of the substrate (50) for light in the wavelength band of 0.9 micrometers to 1 micrometer has a characteristic that depends on the temperature of the substrate (50). For example, a silicon wafer has a semi-transparent transmittance at a temperature of 600°C or less, and transmits light in a low temperature range due to its material properties. Due to the above characteristics, when the substrate (50) has a low temperature of 600°C or less, part of the light emitted from a halogen lamp having a radiation wavelength of 0.4 micrometers to 6 micrometers is transmitted through the substrate (50). As such, in the case where the substrate (50) has a low temperature, part of the light emitted from the halogen lamp having a radiation wavelength of 0.4 micrometers to 6 micrometers is transmitted through the substrate, and the pyrometer (220) having a measurement wavelength band of 0.9 micrometers to 1 micrometer measures the part of the transmitted light. Therefore, the pyrometer (220) may not be able to accurately measure the temperature of the substrate (50), resulting in temperature measurement errors.

[0112] In order to solve the above limitations, the substrate heating device (200) according to the present invention can use a first laser module (110) and a second laser module (120) as light sources, and the first laser module (110) and the second laser module (120) each include the plurality of laser cells (10) having a main emission wavelength shorter than a measurement wavelength of a higher temperature meter (220), and VCSELs can be used in the laser cells (10).

[0113] The semiconductor laser diode (or semiconductor laser) of the laser unit cell (10) (which is an element that emits a coherent laser beam from a junction when voltage is applied to both ends) has a structure in which an active region is inserted between PN junctions and emits light of a wavelength determined by the thickness and composition of the active region. Therefore, when the thickness and composition of the active region are changed, the semiconductor laser diode can emit light of a predetermined wavelength.

[0114] Since the silicon wafer has a semi-transparent transmittance at a temperature of 600° C. or less, the light emitted from the first laser module (110) and the second laser module (120) may also be transmitted through the silicon wafer like the light of a halogen lamp and reach the pyrometer (220). However, since the main emission wavelength of each of the first laser module (110) and the second laser module (120) is shorter than the measurement wavelength of the pyrometer (220), the light emitted from the first laser module (110) and the second laser module (120) may be excluded from the amount of light measured by the pyrometer (220). Therefore, the amount of light measured by the pyrometer (220) may include only the amount of light radiated or reflected from the substrate (50). For example, when the first laser module (110) and the second laser module (120) each having an emission wavelength of 0.85 micrometers are used as light sources, although light transmitted through the silicon wafer at 600° C. or less reaches the pyrometer (220), light deviating from the measurement wavelength of 0.9 micrometers to 1 micrometer may be excluded from the amount of light measured by the pyrometer (220), and thus the temperature of the substrate (50) may not be accurately measured.

[0115] Although (LED) can also emit light with various wavelengths by changing the composition of the active region, (LED) is not suitable because the spectral width of the output light is 30 nanometers to 120 nanometers, which is relatively wide and is likely to produce a band overlapping with 0.9 micrometers to 1 micrometer, which is the measurement wavelength of the pyrometer (220). Although the emission wavelength of (LED) is required to be shorter than the emission wavelength of visible light or ultraviolet light so as not to overlap with the measurement wavelength band of the pyrometer (220), light with a short wavelength does not transmit heat energy more efficiently than infrared light with a wavelength of 850 nanometers.

[0116] However, a semiconductor laser diode (LD) may have a spectral width of output light that is generally much narrower than 1 nm, and even a multimode laser diode (LD) may have a spectral width of output light that is a narrow spectral width of about 3 nm to 10 nm. Therefore, the (LD) can obtain a wavelength band of output light that does not overlap with 0.9 nm to 1 nm, which is a measurement wavelength of the pyrometer (220), while using infrared light (e.g., infrared light having a wavelength of 850 nm).

[0117] Here, a plurality of pyrometers (220) may be provided to correspond to a plurality of virtual circles (20) having different radii centered on the first laser module (110). A plurality of pyrometers (220) may be provided, and the plurality of pyrometers (220) may be respectively provided to correspond to the plurality of virtual circles (20) having different radii centered on the first laser module (110) (or concentric with the center of the first laser module). Therefore, the temperature of each portion (or each position) of the substrate (50) corresponding to each region divided according to the distance from the center of the heater block (100) (or the center of the first laser module) can be measured. That is, for each portion (or each position) of the substrate (50) (mainly) heated by each region, the plurality of pyrometers (220) face the region divided according to the distance from the center of the heater block (100). Thus, the heating temperature of each area (control area) is controlled according to the temperature of each portion of the substrate (50) measured by the plurality of pyrometers (220), so that the temperature of each portion of the substrate (50) is uniform during the process.

[0118] Here, the substrate ( 50 ) may have a circular shape, and the substrate heating apparatus ( 200 ) according to the exemplary embodiment may further include a rotation driving unit (not shown) that rotates the substrate ( 50 ).

[0119] The rotation driving unit (not shown) may rotate the substrate (50) to further uniformize the temperature of the substrate (50), may rotate the substrate support (210) to rotate the substrate (50) together with the substrate support (210), or may rotate only the substrate (50) on the substrate support (210).

[0120] In an exemplary embodiment, since the substrate (50) has a circular shape, the first laser module (110) can be divided into a central control area (110a) and an edge control area (110b) to form concentric circles around the first laser module (110), the first control area (120a) and the second control area (120b) passing through (or spanning) the same concentric circle (having the same radius) can be grouped, and the plurality of pyrometers (220) can be arranged to correspond to the plurality of virtual circles (20) having different radii, respectively. Here, the pyrometers (220) can be arranged one by one to correspond to each of the plurality of virtual circles (20), and the temperature of a wide (ring-shaped) portion of the substrate (50) extending along the virtual circle (20) can be measured by rotating the substrate (50) using a rotation driving unit (not shown). That is, while the substrate (50) is rotated, a wide portion of the substrate (50) extending along the virtual circle (20) can pass through (all) pyrometers (220) (positions of the pyrometers), and the temperature of the wide portion of the substrate (50) extending along the virtual circle (20) can be measured using a single pyrometer (220).

[0121] Here, since a virtual circle (20) is set for each shell (or layer) of the first laser module (110) and / or the second laser module (120), one (each) pyrometer (220) may be provided corresponding to each virtual circle (20). Alternatively, a virtual circle (20) is set for each central control area (110a) and edge control area (110b) of the first laser module (110) and / or each group of first control areas (120a) and each group of second control areas (120b) of the plurality of second laser modules (120). However, the exemplary embodiment is not limited to the setting of the plurality of virtual circles (20) and the arrangement of the plurality of pyrometers (220). For example, the plurality of virtual circles (20) and the plurality of pyrometers (220) may be set and arranged in various ways. By measuring the temperature of each portion of the substrate (50) and controlling the heating temperature of each region (or each group), all kinds of settings and arrangements are satisfied as long as the temperature of each portion of the substrate (50) is uniform during the process.

[0122] For example, the pyrometer (220) may include a first pyrometer (220a) arranged corresponding to the first virtual circle (20a), a second pyrometer (220b) arranged corresponding to the second virtual circle (20b), a third pyrometer (220c) arranged corresponding to the third virtual circle (20c), and a fourth pyrometer (220d) arranged corresponding to the fourth virtual circle (20d). The first pyrometer (220a) may be arranged corresponding to the first virtual circle (20a), and may be arranged between the central control area (110a) and the edge control area (110b) of the first laser module (110) (on the boundary between the central control area 110a and the edge control area 110b). In addition, the second pyrometer (220b) can be arranged corresponding to the second virtual circle (20b), and can be arranged between the group consisting of the first control area (120a) (or the concentric circles formed by the group) and the group consisting of the second control area (120b) (or the concentric circles formed by the group) of the second laser module (120) of the first housing.

[0123] Furthermore, the third pyrometer (220c) may be provided corresponding to the third virtual circle (20c), and may be provided between the group consisting of the first control area (120a) (or the concentric circles formed by the group) and the group consisting of the second control area (120b) (or the concentric circles formed by the group) of the second laser module (120) of the double shell. Furthermore, the fourth pyrometer (220d) may be provided corresponding to the fourth virtual circle (20d), and may be provided between the group consisting of the first control area (120a) (or the concentric circles formed by the group) and the group consisting of the second control area (120b) (or the concentric circles formed by the group) of the second laser module (120) of the triple shell.

[0124] The substrate heating device (200) according to an embodiment of the present invention may further include a heating control unit (230) which controls each control area (110a, 110b, 120a and 120b) according to a distance from each virtual circle (20) based on a temperature measured by each of the plurality of pyrometers (220).

[0125] The heating control unit (230) can control each control area (110a, 110b, 120a, and 120b) according to the distance from each virtual circle (20) based on the temperature measured by each of the plurality of pyrometers (220), and can control the power supplied to each control area (110a, 110b, 120a, and 120b) using the measured temperature. Here, the plurality of pyrometers (220) can calculate the temperature by measuring the amount of light incident from the substrate (50), and the heating control unit (230) can control the power input to each control area (110a, 110b, 120a, and 120b) using the measured temperature.

[0126] For example, the heating control unit (230) may include a temperature setting unit (231) for setting a target temperature of the substrate (50) and a power determination unit (232) for determining a power supply value by comparing a temperature measured by the pyrometer (220) with a target temperature set by the temperature setting unit (231). The temperature setting unit (231) may set a target temperature of the substrate (50) and a temperature of the substrate (50) to be obtained by heating the heater block (100).

[0127] The power determination unit (232) can determine the power supply value by comparing the target temperature set by the temperature setting unit (231) with the temperature measured by the pyrometer (220), and can supply the determined power to the first power supply unit (130) and / or the second power supply unit (140). Thus, the heating temperature of the area can be controlled (or adjusted) by supplying the determined power to the area (of the heater block) corresponding to (or facing) the part of the substrate (50) measured by the pyrometer (220) (the control area of ​​the area), and the temperature (difference) of the part of the substrate (50) measured by the pyrometer (220) can be compensated (or corrected).

[0128] Although the heating control unit (230) can simultaneously control the entire first laser module (110) and / or the entire second laser module (120) according to the measured temperature, the heating control unit (230) can independently adjust the operation and power supply of each of the plurality of groups (e.g., the central control area and the edge control area, and the group consisting of the first control area and the group consisting of the second control area) according to the temperature of each portion of the substrate (50) corresponding to the position of each of the plurality of pyrometers (220).

[0129] In addition, the heating control unit (230) can control the heating temperature of two or more groups using the temperature measured by one pyrometer (220). For example, the heating temperature of the central control area (110a) and the edge control area (110b) can be controlled using the temperature measured by the first pyrometer (220a) disposed between the central control area (110a) and the edge control area (110b) of the first laser module (110). In addition, the heating temperature of the group consisting of the first control area (120a) and the group consisting of the second control area (120b) of the second laser module (120) of the first housing can be controlled using the temperature measured by the second pyrometer (220b) disposed between the group consisting of the first control area (120a) and the group consisting of the second control area (120b) of the second laser module (120) of the first housing. Furthermore, the heating temperatures of the group consisting of the first control region (120a) and the group consisting of the second control region (120b) of the double-shell second laser module (120) can be controlled using the temperature measured by the third pyrometer (220c) disposed between the group consisting of the first control region (120a) and the group consisting of the second control region (120b) of the double-shell second laser module (120). Furthermore, the heating temperatures of the group consisting of the first control region (120a) and the group consisting of the second control region (120b) of the triple-shell second laser module (120) can be controlled using the temperature measured by the fourth pyrometer (220d) disposed between the group consisting of the first control region (120a) and the group consisting of the second control region (120b) of the triple-shell second laser module (120).

[0130] Here, the area provided by the first laser module (110) and the second laser module (120) of the heater block (100) may be larger than the area of ​​the substrate (50) to compensate for heat loss outside the substrate (50), and when controlling the heating temperature of only the area facing (or corresponding to) the portion of the substrate (50) measured by the pyrometer (220), the pyrometer (220) may perform measurement only within the area of ​​the substrate (50) without deviating from the area of ​​the substrate (50) to control the heating temperature of the control area (110a, 110b, 120a and 120b). Therefore, when the fourth pyrometer (220d) is the outermost pyrometer (220) that measures the temperature of the substrate (50) within the region of the substrate (50), the heating temperatures of the group consisting of the first control region (120a) and the group consisting of the second control region (120b) of the second laser module (120) of the triple shell and the heating temperatures of the group consisting of the first control region (120a) and the group consisting of the second control region (120b) of the second laser module (120) of the n-layer shell (e.g., quadruple shell) can also be controlled using the temperature measured by the fourth pyrometer (220d).

[0131] Here, the heating temperature control (or controlled heating temperature) of the central control area (110a) and the edge control area (110b) and / or the group consisting of the first control area (120a) and the group consisting of the second control area (120b) can vary depending on the distance from each virtual circle (20).

[0132] Furthermore, the temperature measurement of the substrate (50) by the pyrometer (220) can be performed even in a temperature range below 600°C.

[0133] In recent years, in new semiconductor devices such as nano-complementary metal oxide semiconductor (CMOS) (Nano-CMOS) and fin field effect transistor (FinFET), new materials such as nickel silicide (NiSi) are needed to reduce the leakage current and resistance of shallow junctions. Low temperature processes with a temperature equal to or less than 600° C. are required to deposit thin films such as nickel silicide.

[0134] In general, when a halogen lamp or a semiconductor light emitting diode (LED) is used as a heating light source, the pyrometer (220) may not accurately measure a temperature in a low temperature range of 600° C. or less. Therefore, a complicated process such as a process of additionally installing another unit capable of measuring a temperature even in a low temperature range of 600° C. or less to the substrate heating device (200) is required, and thus, the substrate heating device (200) may have a complicated structure.

[0135] However, by using a laser unit cell (10) having a main emission wavelength short of a measuring wavelength of a higher temperature meter (220) as a heating light source to cope with all processes in a wide temperature range from a low temperature process below 600°C to a high temperature process, the substrate heating device (200) according to the present invention can even accurately measure a temperature below 600°C without using an additional temperature measuring unit.

[0136] Therefore, the substrate heating device (200) including the heater block (100) according to the present invention can control the heating temperature of each group (or each control area) of the first laser module (110) and the second laser module (120) using the temperature measured by the pyrometer (220) to improve the temperature uniformity of the substrate (50) during the process. Specifically, since the control area is subdivided by dividing at least one of the first laser module (110) and the second laser module (120) into a plurality of control areas (110a, 110b, 120a and 120b), the temperature uniformity of the substrate (50) can be further improved. Here, since the plurality of pyrometers (220) are arranged to correspond to the plurality of virtual circles (20) having different radii at different distances from the first laser module (110), and the first control areas (120a) and the second control areas (120b) of the plurality of second laser modules (120) are grouped according to the distance from the first laser module (110), the plurality of first control areas (120a) and the plurality of second control areas (120b) can be controlled for each group forming concentric circles centered on the first laser module (110). Thus, the plurality of first control areas (120a) and the plurality of second control areas (120b) can be accurately controlled for each group according to the distance from each virtual circle (20) based on the temperature measured by each of the plurality of pyrometers (220), and thus process characteristics such as excellent temperature uniformity of the substrate (50) can be improved.

[0137] Furthermore, when VCSEL is used in the laser unit cell (10) of the heater block (100), by irradiating laser light having a main emission wavelength band different from the measurement wavelength band of the pyrometer (220), the temperature of the substrate (50) can be accurately measured even in a low temperature region below 600° C., and the temperature of the substrate (50) can be precisely controlled. Therefore, by ensuring the temperature uniformity of the substrate (50), the substrate (50) can be prevented from being damaged, and the reliability of a low temperature process at a temperature equal to or less than 600° C. can be ensured.

[0138] Figure 7 is a flow chart showing a method for heating a substrate according to yet another embodiment of the present invention.

[0139] In the following, reference will be made to Figure 7 A method for heating a substrate according to still another exemplary embodiment of the present invention is explained in more detail, and features overlapping those explained in the heater according to an embodiment of the present invention and in the substrate heating apparatus according to another exemplary embodiment of the present invention will be omitted.

[0140] According to another exemplary embodiment of the present invention, a method for heating a substrate may include: a process (S100) of disposing a substrate to face a heater block including a first laser module and a second laser module to which power is independently supplied; a process (S200) of irradiating a first surface of the substrate facing the heater block with light using the first laser module and the second laser module; and a process (S300) of measuring a temperature of the substrate using a pyrometer disposed on a second surface of the substrate facing the first surface.

[0141] First, in the process (S100), a substrate is disposed to face a heater block including a first laser module and a second laser module each independently supplied with power. The substrate may be disposed to face the heater block including a first laser module and a second laser module each independently supplied with power, and the substrate may be supported on a substrate support member disposed to face the heater block. For example, when a substrate support member is installed in an inner space of a chamber to support the substrate, the substrate may be disposed in a processing space of the chamber, and the substrate may be loaded into the inner space of the chamber through an inlet defined on one side of the chamber.

[0142] Thereafter, in the process (S200), the first surface of the substrate facing the heater block is irradiated with light using the first laser module and the second laser module. The first surface of the substrate facing the heater block may be irradiated with light using the first laser module and the second laser module, the first surface of the substrate may be irradiated with light (light energy of light) emitted from the laser cell of each of the first laser module and the second laser module, and the light energy may be converted into heat energy to increase the temperature of the substrate. Here, the laser cell may include a vertical cavity surface emitting laser (VCSEL). Here, the light energy of the light emitted from the first laser module and the second laser module may be determined according to the amount of electricity supplied to each of the first laser module and the second laser module from each of the first power supply and the second power supply.

[0143] Thereafter, in the process (S300), the temperature of the substrate is measured using a pyrometer disposed on the second surface of the substrate facing the first surface. The temperature of the substrate may be measured using the pyrometer disposed on the second surface of the substrate, and the pyrometer may measure the temperature using the radiation energy of light incident from the substrate. Here, the main emission wavelength of the laser unit cell may be shorter than the measurement wavelength of the pyrometer.

[0144] At least one of the first laser module and the second laser module may be divided into a plurality of control areas that are controlled independently of each other. At least one of the first laser module and the second laser module may include a plurality of input terminals and may be divided into a plurality of control areas each having an input terminal. Here, the plurality of control areas may include at least laser cells for each of the common input terminals and may be controlled independently of each other depending on the input terminal to which power is supplied.

[0145] The first laser module may be divided into a central control area and an edge control area, and the second laser module may be equally divided into the first control area and the second control area. The first laser module may be concentrically divided into the central control area and the edge control area, the central control area may be disposed inside the heater block and may be disposed at the center of the heater block, and the edge control area may be disposed outside the central control area. Therefore, even within the first laser module, the control area may be subdivided in a radial direction from the center of the heater block.

[0146] The second laser module may be bisected radially into a first control region and a second control region, and the first control region and the second control region may be symmetrical to each other and may have the same shape and area and the same number of laser cells. For example, when the second laser module has a hexagonal shape, the first control region and the second control region may be bisected based on a line connecting the vertices of the hexagon or a line connecting the sides of the hexagon.

[0147] Here, a plurality of second laser modules may be provided, and the first laser module may be used as a center to be arranged around the first laser module so that the distance from each of the first control area and the second control area to the first laser module is different. A plurality of second laser modules may be provided, and the first laser module may be used as a center to be arranged around the first laser module and along the circumference of the first laser module. For example, only one first laser module may be provided at the center (or central portion) of the heater block, and the plurality of second laser modules may be provided at the edge of the heater block to surround the circumference of the first laser module. Here, although the second laser module may surround the first laser module using only one housing, the second laser module may surround the first laser module using a plurality of housings (e.g., a double housing or a triple housing), and the plurality of housings form concentric circles around the first laser module according to the size and shape of the substrate and / or the heater block. Thus, the control area may be subdivided in the radial direction from the center of the heater block.

[0148] In addition, the first control area and the second control area may be arranged at different distances from the first laser module, one of the first control area and the second control area may be arranged close to the first laser module, and the other control area may be arranged away from the first laser module. For example, the plurality of second laser modules may be arranged around the first laser module, so that the first control area is arranged close to the first laser module and toward the first laser module, and the second control area is arranged relatively away from the first laser module in an outward direction (radial direction).

[0149] The method for heating a substrate according to the present invention may further include a process ( S400 ) of grouping and controlling the first control areas and the second control areas of the plurality of second laser modules respectively according to the distances from the first laser module.

[0150] In addition, the first control areas and the second control areas of the plurality of second laser modules may be grouped and controlled respectively according to the distance from the first laser module. The heating control unit may group and control the first control areas and the second control areas of the plurality of second laser modules according to the distance from the first laser module, and may control the heating temperature of the grouped first control areas and the grouped second control areas to uniformize the temperature of each portion of the substrate during the process. The first control areas and the second control areas of the plurality of second laser modules may be grouped according to the distance from the first laser module to: form concentric circles around the first laser module; efficiently (or effectively) control the plurality of first control areas (i.e., a group consisting of the first control areas) and the plurality of second control areas (i.e., a group consisting of the second control areas) of each group passing through the same concentric circle; and improve the temperature uniformity of the substrate by heating.

[0151] When the first control area and the second control area are grouped, a plurality of pyrometers may be provided corresponding to a plurality of virtual circles having different radii centered on the first laser module, respectively. When the first control area and the second control area are grouped, the plurality of pyrometers may be provided corresponding to the plurality of virtual circles having different radii centered on the first laser module, respectively. For example, a plurality of pyrometers may be provided, and the plurality of pyrometers may be provided to correspond to the plurality of virtual circles having different radii centered on the first laser module (or using the center of the first laser module as the center of the concentric circles), respectively. Therefore, the temperature of each portion (or each position) of the substrate corresponding to each region (or the control region of each region) divided according to the distance from the center of the heater block (or the center of the first laser module) may be measured. Here, since the first control area and the second control area are grouped to smoothly control the group consisting of the first control area and the group consisting of the second control area to achieve temperature uniformity of each portion of the substrate during the process, the plurality of virtual circles may be set, and the plurality of pyrometers may correspond to the plurality of virtual circles.

[0152] In addition, the process of grouping and controlling (S400) may control each control area of ​​each group according to the distance from each virtual circle based on the temperature measured by each of the plurality of pyrometers. The heating control unit may control each control area of ​​each group according to the distance from each virtual circle based on the temperature measured by each of the plurality of pyrometers, and may control the power supplied to each control area using the measured temperature. Here, the plurality of pyrometers may calculate the temperature by measuring the amount of light incident from the substrate, and the heating control unit may control the power input to each control area using the calculated temperature.

[0153] For example, the process (S400) of performing grouping and control includes: a process (S410) of setting a target temperature of the substrate; and a process (S420) of determining a supply power value by comparing the set target temperature with the measured temperature.

[0154] A target temperature of the substrate may be set in the process (S410). The target temperature of the substrate may be set by a temperature setting unit, and a temperature of the substrate to be obtained by heating by the heater block may be set.

[0155] Furthermore, in the process (S420), the supply power value may be determined by comparing the set target temperature with the measured temperature. The process (S410) of setting the target temperature by the power determination unit may determine the supply power value by comparing the target temperature set in the temperature setting unit with the temperature measured by the pyrometer, and the determined power may be supplied to the first power supply unit and / or the second power supply unit. Thus, the heating temperature of the area may be controlled (or adjusted) by supplying the determined power to the area (of the heater block) corresponding to (or facing) the portion of the substrate measured by the pyrometer (the control area of ​​the area), and the temperature (difference) of the portion of the substrate measured by the pyrometer may be compensated (or corrected).

[0156] Therefore, by measuring the temperature of each portion (or each position) of the substrate corresponding to each region (or the control region of each region) divided according to the distance from the center of the heater block (or the center of the first laser module) using the plurality of pyrometers, the method for heating the substrate according to the present invention can control the heating temperature of each region (or the control region of each region) according to the temperature of each portion of the substrate measured by the plurality of pyrometers. Therefore, the temperature of each portion (in the radial direction) divided according to the distance from the center of the (circular) substrate can be accurately adjusted, and the temperature uniformity of the substrate can be improved by making the temperature of each portion of the substrate uniform during the process.

[0157] On the other hand, each process of the method for heating a substrate according to another exemplary embodiment is not necessarily performed in a time sequence, and each process may be performed in a reverse order or simultaneously as needed. For example, after the process (S300) of measuring the temperature of the substrate, the process (S200) of irradiating the first surface of the substrate with light may be performed. In addition, a plurality of processes may be repeatedly performed, or only a process selected from the plurality of processes may be repeatedly performed.

[0158] As described above, in the present invention, power is independently supplied to the first laser module and the second laser module by the first power supply unit and the second power supply unit, respectively, so that the first laser module and the second laser module can be controlled independently of each other. Therefore, the heating temperature of each position of the first laser module and the second laser module can be adjusted, and the heating uniformity of the object to be heated (for example, the substrate) can be improved. In addition, since at least one of the first laser module and the second laser module is divided into the plurality of control areas and is controlled independently of each other, the control area can be subdivided, and the heating uniformity of the object to be heated can be further improved. Here, since the divided shape of the control area is distinguished between the first laser module and the second laser module as concentric division and radial division, the heating temperature can be accurately controlled by subdividing the control area in the radial direction from the center of the heater block. Here, since the first control area and the second control area of ​​the second laser module disposed around the first laser module are arranged at different distances from the first laser module, and the first control areas and the second control areas of the plurality of second laser modules are grouped according to the distance from the first laser module, the plurality of first control areas and the plurality of second control areas can be efficiently controlled for each group forming concentric circles centered on the first laser module. Therefore, the temperature uniformity of an object to be heated by heating can be improved. In addition, by using a VCSEL in a laser unit cell, power consumption can be reduced due to high energy efficiency compared to a conventional halogen lamp, and the heater block according to an exemplary embodiment can effectively control optical properties due to light straightness and ease of emitting light having a specific wavelength. In addition, by controlling the heating temperature of the first laser module and the second laser module using the temperature measured by the pyrometer, the temperature uniformity of the substrate during the process can be improved. Specifically, since the control area is subdivided by dividing at least one of the first laser module and the second laser module into the plurality of control areas, the temperature uniformity of the substrate can be further improved. Here, since the plurality of pyrometers are provided with the plurality of virtual circles having different radii respectively arranged to correspond to different distances from the first laser module, and the first control regions and the second control regions by the plurality of second laser modules are grouped according to the distance from the first laser module, the plurality of first control regions and the plurality of second control regions can be controlled for each group forming concentric circles centered on the first laser module. Thus, the plurality of first control regions and the plurality of second control regions can be accurately controlled for each group according to the distance from each virtual circle based on the temperatures respectively measured by the plurality of pyrometers, and thus process characteristics such as excellent temperature uniformity of the substrate can be improved.Meanwhile, when VCSEL is used in the laser unit cell of the heater block, by irradiating laser light having a main emission wavelength band different from the measurement wavelength band of the pyrometer, the temperature of the substrate can be accurately measured even in a low temperature region below 600° C., and the temperature of the substrate can be precisely controlled. Therefore, the substrate can be prevented from being damaged by ensuring the temperature uniformity of the substrate, and the reliability of the low temperature process at a temperature equal to or less than 600° C. can be ensured.

[0159] In the present specification, it should be understood that when a layer (or film) is referred to as being “on” another layer or substrate, the layer (or film) may be directly on another layer or substrate, or intervening layers may also be present.

[0160] Although exemplary embodiments of the present invention have been described, it should be understood that the present invention should not be limited to these exemplary embodiments, but that those skilled in the art can make various changes and modifications within the spirit and scope of the present invention as claimed below. Therefore, the true protection scope of the present invention should be determined by the technical scope of the appended claims.

Claims

1. A heater block comprising: A first laser module having a plurality of laser units; A second laser module has a plurality of laser cells and is arranged around the first laser module; as well as The first power supply unit and the second power supply unit are configured to independently supply power to the first laser module and the second laser module, respectively. wherein at least one of the first laser module and the second laser module is divided into a plurality of control areas, each of which is composed of one or more laser cells, and the one or more laser cells share an input terminal to which the power is input, and The plurality of control areas are controlled independently of each other. 2 . The heater block according to claim 1 , wherein the first laser module and the second laser module have different division shapes of the plurality of control areas. 3 . The heater block according to claim 1 , wherein the second laser module is provided in plural numbers and is arranged around the first laser module using the first laser module as a center.

4. The heater block according to claim 3, wherein the first laser module is divided into a central control area and an edge control area, and The second laser module is equally divided into a first control area and a second control area. 5 . The heater block of claim 4 , wherein the first control area and the second control area are disposed at different distances from the first laser module. 6 . The heater block according to claim 5 , wherein the first control areas and the second control areas of the plurality of second laser modules are respectively grouped according to the distance from the first laser module.

7. The heater block according to claim 6, wherein the first power supply section independently supplies power to each of the central control area and the edge control area, and The second power supply section independently supplies power to each of the group consisting of the first control area and the group consisting of the second control area. 8 . The heater block of claim 1 , wherein each of the first laser module and the second laser module has a polygonal shape.

9. The heater block of claim 1, wherein the laser unit cells comprise vertical cavity surface emitting lasers.

10. The heater block according to claim 1, further comprising a reflector unit configured to reflect at least part of the light emitted from the first laser module and the second laser module in a predetermined direction by surrounding an edge of each of the first laser module and the second laser module.

11. A substrate heating device, comprising: a substrate support configured to support a substrate; as well as The heater block according to any one of claims 1 to 10, disposed to face the substrate support member, and heating the substrate by irradiating the first surface of the substrate with transmitted light. 12 . The substrate heating apparatus according to claim 11 , further comprising a pyrometer provided at a second surface side of the substrate opposite to the first surface to measure a temperature of the substrate. 13 . The substrate heating apparatus according to claim 12 , wherein a plurality of the pyrometers are provided, and the plurality of pyrometers are arranged to correspond to a plurality of virtual circles having different radii centered on the first laser module, respectively. 14 . The substrate heating apparatus according to claim 13 , further comprising a heating control unit configured to control each of the plurality of control areas according to a distance from each of the plurality of virtual circles based on a temperature measured by each of the plurality of pyrometers.

15. A method for heating a substrate, the method comprising: disposing the substrate to face a heater block including a first laser module and a second laser module each independently supplied with power; irradiating a first surface of the substrate facing the heater block with light by the first laser module and the second laser module; as well as measuring the temperature of the substrate by a pyrometer provided at a second surface side of the substrate opposite to the first surface, At least one of the first laser module and the second laser module is divided into a plurality of control areas that are independently controlled from one another.

16. The method according to claim 15, wherein the first laser module is divided into a central control area and an edge control area, The second laser module is divided into a first control area and a second control area, and A plurality of the second laser modules are provided and are arranged around the first laser module using the first laser module as a center, so that the distance from the first laser module to each of the first control area and the second control area is different. 17 . The method according to claim 16 , further comprising grouping and controlling the first control areas and the second control areas of the plurality of second laser modules respectively according to the distance from the first laser module.

18. The method according to claim 17, wherein according to the grouping of the first control area and the second control area, a plurality of pyrometers are arranged to correspond to a plurality of virtual circles with different radii centered on the first laser module, respectively, and The grouping and the controlling control each of the plurality of control areas of each group according to a distance from each of the plurality of virtual circles based on a temperature measured by each of the plurality of pyrometers.

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