Low-damage and high-efficiency laser processing assembly

Abstract

The invention relates to the technical field of laser processing, in particular to a low-damage and high-efficiency laser processing assembly which comprises a galvanometer, a laser transmitter and a field lens, the laser transmitter transmits a plurality of laser S pulse packets, an optical diffraction device is arranged on one side of the galvanometer, and the field lens is arranged on the other side of the galvanometer. The plurality of laser S pulse packets are converted into a plurality of laser X pulse packets through an optical diffraction device, the laser S pulse packets are Gaussian light, the laser X pulse packets are flat-topped light, and the plurality of laser X pulse packets etch a processing material through a galvanometer and a field lens. According to the method, the time interval between the current pulse packet and the next pulse packet is adjusted according to the actual requirement for the distance between the holes, the energy utilization rate of laser is improved by adopting a machining mode of high single pulse energy and containing N laser sub-pulses, in addition, the light spot form is changed into flat-topped light from Gaussian light, and the machining efficiency is improved. And damage to the edge of a machining material in the machining process is relieved.

Description

Technical Field

[0001] The invention relates to the technical field of laser processing, in particular to a low-damage and high-efficiency laser processing component. Background Art

[0002] In some application scenarios, some metal or non-metal materials need to have extremely high light absorption rates. The structure that absorbs light energy on such processed materials is called a light-trapping structure. The light-trapping structure can reduce reflection and increase light absorption. The light-trapping structure mainly includes a pyramid structure, a porous structure and a black-surface structure. The porous structure can be completed by laser etching.

[0003] There are usually two methods for laser etching of porous structures on the market, divided by area. One is the unit area etching method, which is fast, but the energy of each laser beam is low, and usually can only process light-trapping holes with a depth of 1-10μm.

[0004] Another method is to etch individual holes one by one. In particular, when etching holes with a depth greater than 10μm, a higher energy per laser beam is required. In existing laser etching methods, the high-speed scanning galvanometer can reach a maximum of more than 20m / s. However, since the energy of each beam is too large each time, it exceeds the processing threshold of the processing material, resulting in stress concentration on the surface of the processing material, causing damage to the mechanical strength and stability of the processing material. The damaged processing material cannot achieve an extremely high light absorption rate and needs to be reworked or re-etched. The laser energy utilization rate is not accurate and the etching efficiency is greatly reduced. Therefore, a low-damage and high-efficiency laser processing component is urgently needed to solve the above problems. Summary of the invention

[0005] The purpose of the present invention is to provide a low-damage and high-efficiency laser processing component to solve the problem that in the existing laser etching method proposed in the above background technology, the high-speed scanning galvanometer can reach a maximum of more than 20m / s, but because the energy of each beam is too large each time, it exceeds the processing threshold of the processing material, resulting in stress concentration on the surface of the processing material, causing the mechanical strength and stability of the processing material to be damaged, the damaged processing material cannot achieve an extremely high light absorption rate, and needs to be reworked or re-etched, the laser energy utilization rate is not accurate, and the etching efficiency is greatly reduced.

[0006] To achieve the above-mentioned purpose, the present invention provides the following technical solutions: a low-damage and high-efficiency laser processing component, comprising a galvanometer, a laser emitter and a field mirror, wherein the laser emitter emits several laser S pulse packets, which can achieve laser drilling of between 500,000 and 5 million holes in 1 minute, with a hole diameter of 50μm-150μm and a hole depth of 20μm-100μm.

[0007] Preferably, a plurality of laser S pulse packets etch the processing material through a galvanometer and a field lens, and the processing material includes silicon, copper and aluminum.

[0008] Preferably, an optical diffraction device is provided on one side of the galvanometer, and a plurality of laser S pulse packets are transformed into a plurality of laser X pulse packets through the optical diffraction device, wherein the laser S pulse packets are Gaussian light and the laser X pulse packets are flat-top light, and the plurality of laser X pulse packets are etched on the processing material through the galvanometer and the field lens.

[0009] Preferably, a plurality of laser S pulse packets and / or laser X pulse packets are divided into N sub-pulses, the number of the N sub-pulses is 1-5000, and the interval between each sub-pulse is 1-100 ns.

[0010] Preferably, the movement speed of the galvanometer is Q, 25m / s>Q>2m / s.

[0011] Preferably, when the time interval between the first laser S pulse packet and the next laser S pulse packet is P time, the range of P is 0.3 μs-4 μs.

[0012] Preferably, the time interval between the current laser S pulse packet and the next laser S pulse packet is T time, where T=the distance from the current processing position to the next processing position / Q.

[0013] Preferably, a reflector is provided on one side of the laser transmitter, and the laser S pulse packet is reflected by the reflector.

[0014] Compared with the prior art, the present invention has the following beneficial effects: by adjusting the time interval between the current pulse package and the next pulse package according to the actual distance between the holes, ultimately achieving efficient laser etching efficiency, and adopting a processing method with high single pulse energy and N laser sub-pulses, so that each laser sub-pulse reaches the processing threshold of the material, thereby improving the energy utilization rate of the laser. In addition, the spot shape is changed from Gaussian light to flat-top light, so that the energy density of the focused spot is more uniform, reducing the low energy density at the edge of the Gaussian light, and alleviating the problem of damage to the edge of the processed material during processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a front view structural schematic diagram of the present invention;

[0016] Figure 2 It is a schematic diagram of the operation steps of the present invention;

[0017] Figure 3 This is a demonstration diagram of N sub-pulses in the laser S pulse packet of the present invention;

[0018] Figure 4 This is a data diagram of Example 1 of the present invention.

[0019] In the figure: 1. galvanometer; 2. laser transmitter; 3. field mirror; 4. laser S pulse package; 5. optical diffraction device; 6. laser X pulse package; 7. reflector. DETAILED DESCRIPTION

[0020] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technical personnel in this field without creative work are within the scope of protection of the present invention.

[0021] See also Figures 1 to 4 The present invention provides a technical solution: a low-damage and high-efficiency laser processing component, including a galvanometer 1, a laser emitter 2 and a field lens 3. The laser emitter 2 emits a plurality of laser S pulse packets 4, which can achieve laser drilling of 500,000 to 5 million holes in 1 minute, with a hole diameter of 50μm-150μm and a hole depth of 20μm-100μm.

[0022] Furthermore, a plurality of laser S pulse packets 4 pass through the galvanometer 1 and the field lens 3 to etch the processing material, wherein the processing material includes silicon, copper and aluminum.

[0023] Furthermore, an optical diffraction device 5 is provided on one side of the galvanometer 1. Several laser S pulse packets 4 are transformed into several laser X pulse packets 6 through the optical diffraction device 5. The laser S pulse packet 4 is Gaussian light, and the laser X pulse packet 6 is flat-top light. Several laser X pulse packets 6 etch the processing material through the galvanometer 1 and the field lens 3.

[0024] Furthermore, a plurality of laser S pulse packages 4 and / or laser X pulse packages 6 are divided into N sub-pulses, the number of the N sub-pulses is 1-5000, and the interval between each sub-pulse is 1-100 ns.

[0025] Furthermore, the movement speed of the galvanometer 1 is Q, 25m / s>Q>2m / s, and the field lens 3 is installed on the galvanometer 1, and the galvanometer 1 moves with the field lens 3.

[0026] Further, when the time interval between the first laser S pulse packet 4 and the next laser S pulse packet 4 is P time, the range of P is 0.3 μs-4 μs.

[0027] Furthermore, the time interval between the current laser S pulse packet 4 and the next laser S pulse packet 4 is T time, where T=the distance from the current processing position to the next processing position / Q.

[0028] It should be noted that a processing route map will be imported into the galvanometer 1. When the route is used, the current processing position and the next processing position will be clearly known, and the distance between the current processing position and the next processing position can also be obtained. According to this distance, the speed Q and interval time T of the galvanometer 1 can be appropriately adjusted.

[0029] Furthermore, a reflector 7 is provided on one side of the laser transmitter 2 , and the laser S pulse packet 4 is reflected by the reflector 7 .

[0030] Embodiment 1: The galvanometer 1 moves with the field lens 3 to the starting point of drilling, and feeds back the position to the laser emitter 2. The laser emitter 2 starts and emits the laser S pulse package 4 multiple times, each time with an interval of P or T. The laser S pulse package 4 is converted into a laser X pulse package 6 through the optical diffraction device 5. While the galvanometer 1 and the field lens 3 move at a speed of 10m / s, the laser X pulse package 6 is divided into 3 sub-pulses, and the interval time between each sub-pulse is 100ns. The pulse time interval can improve the excitation interruption of the molecular bond of the material, and adopts high single pulse energy so that each laser sub-pulse reaches the processing threshold of the processing material, thereby improving the energy utilization rate of the laser and reducing the damage of the processing material. The hole depth is 45.559μm and the hole diameter is 99.573μm, achieving a better light trapping effect.

[0031] Embodiment 2: The galvanometer 1 moves with the field lens 3 to the starting point of drilling, and feeds back the position to the laser emitter 2. The laser emitter 2 starts and emits the laser S pulse package 4 multiple times, each time with an interval of P or T. While the galvanometer 1 and the field lens 3 move at a speed of 20m / s, the laser S pulse package 4 is divided into 50 sub-pulses, and the interval time between each sub-pulse is 10ns. The pulse time interval can improve the excitation and interruption of the molecular bonds of the material, and adopts high single pulse energy so that each laser sub-pulse reaches the processing threshold of the processing material, thereby improving the energy utilization rate of the laser and reducing the damage of the processing material. The hole depth is 99.355μm and the hole diameter is 148.237μm, achieving a better light trapping effect.

[0032] The above shows and describes the basic principles, main features and advantages of the present invention. Technical personnel in this industry should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions are only preferred examples of the present invention and are not used to limit the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention to be protected. The scope of protection of the present invention is defined by the attached claims and their equivalents.

Claims

1. A low-damage and high-efficiency laser processing component, characterized in that: It comprises a galvanometer (1), a laser emitter (2) and a field mirror (3), wherein the laser emitter (2) emits a plurality of laser S pulse packets (4); It can achieve laser drilling of 500,000 to 5 million holes in 1 minute, with a hole diameter of 50μm-150μm and a hole depth of 20μm-100μm.

2. A low-damage and high-efficiency laser processing component according to claim 1, characterized in that: A plurality of laser S pulse packets (4) are used to etch processing materials through a galvanometer (1) and a field lens (3), wherein the processing materials include silicon, copper and aluminum.

3. A low-damage and high-efficiency laser processing component according to claim 1, characterized in that: An optical diffraction device (5) is provided on one side of the galvanometer (1); a plurality of laser S pulse packets (4) are transformed into a plurality of laser X pulse packets (6) through the optical diffraction device (5); the laser S pulse packets (4) are Gaussian light, and the laser X pulse packets (6) are flat-top light; the plurality of laser X pulse packets (6) are etched on a processing material through the galvanometer (1) and the field lens (3).

4. A low-damage and high-efficiency laser processing component according to any one of claims 2 or 3, characterized in that: Several laser S pulse packages (4) or / and laser X pulse packages (6) are divided into N sub-pulses, the number of the N sub-pulses is 1-5000, and the interval time between each sub-pulse is 1-100 ns.

5. The low-damage and high-efficiency laser processing component according to claim 1, characterized in that: The movement speed of the galvanometer (1) is Q, 25m / s>Q>2m / s.

6. A low-damage and high-efficiency laser processing component according to claim 1, characterized in that: When the time interval between the first laser S pulse packet (4) and the next laser S pulse packet (4) is P time, the range of P is 0.3 μs-4 μs.

7. A low-damage and high-efficiency laser processing component according to claim 1, characterized in that: The time interval between the current laser S pulse packet (4) and the next laser S pulse packet (4) is T time, where T=the distance from the current processing position to the next processing position / Q.

8. The low-damage and high-efficiency laser processing component according to claim 1, characterized in that: A reflector (7) is provided on one side of the laser transmitter (2), and the laser S pulse packet (4) is reflected by the reflector (7).

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