Polishing head and polishing carrier device with same

Abstract

A polishing head may include a substrate carrier removably secured to a drive shaft, and pressurizing and rotating a substrate, the substrate carrier including a flexible film wherein the flexible film includes a main film having a first surface in contact with the substrate and a second surface opposite the first surface, and a plurality of vertical films disposed on the main film, the plurality of vertical films being disposed between the main film and the second surface. A plurality of vertical films extending from the main film in a vertical direction to define a plurality of pressurization chambers, the plurality of pressurization chambers being divided in a radial direction with respect to the central axis; a plurality of temperature elements disposed below the plurality of pressurization chambers in the main film, and configured to apply local heat to the substrate; and a plurality of pressure elements disposed on the plurality of temperature elements, respectively, in the main film, and configured to apply local pressure to the main film.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority from Korean Patent Application No. 10-2023-0148786 filed on November 1, 2023 in the Korean Intellectual Property Office (KIPO), the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] Example embodiments relate to a polishing head and a polishing carrier apparatus having the same. More particularly, example embodiments relate to a polishing head configured to press a wafer onto a polishing pad and move the wafer and a polishing carrier apparatus having the same. Background Art

[0004] In a chemical mechanical polishing (CMP) device for planarizing a layer on a substrate, the removal rate of a thin layer may depend on pressure and temperature. In the related art, in order to control the pressure, a polishing head may apply pressure to each annular region through a flexible membrane disposed in the lower portion of the polishing head. Additionally, in order to control the temperature, the temperature of a polishing pad disposed below the substrate may be controlled to indirectly change the temperature of the substrate. In this case, since the pressure may be controlled within the range of each annular region, the local pressure may not be controlled, resulting in uneven flatness of the substrate. In addition, due to indirect temperature control, the temperature control may consume considerable time, resulting in the solidification of the slurry and defects in the substrate. Additionally, since direct cooling is not possible in a particular process, accidental damage to the metal layer of the substrate may occur. Summary of the invention

[0005] Example embodiments provide a polishing head capable of improving polishing uniformity.

[0006] Example embodiments provide a polishing carrier apparatus including the polishing head.

[0007] According to some example embodiments, a polishing head includes: a substrate carrier, which is configured to be detachably fixed to a drive shaft and to pressurize and rotate the substrate, the substrate carrier including a flexible film, the flexible film including a main film, a plurality of vertical films and a plurality of pressurization chambers, the main film having a first surface in contact with the substrate and a second surface opposite to the first surface, the plurality of vertical films extending from the second surface of the main film in a vertical direction, and the plurality of pressurization chambers divided by the plurality of vertical films along a radial direction and about a central axis; a plurality of temperature elements, which are located in the main film and below the plurality of pressurization chambers, the plurality of temperature elements being configured to apply local heat to the substrate; and a plurality of pressure elements, which are located in the main film and respectively located on the plurality of temperature elements, the plurality of pressure elements being configured to apply local pressure to the main film.

[0008] According to some example embodiments, a polishing head includes: a substrate carrier configured to be detachably fixed to a driving shaft and to pressurize and rotate a substrate, the substrate carrier including a plurality of fluid channels penetrating from an upper surface of the substrate carrier to a lower surface of the substrate carrier, the plurality of fluid channels being spaced apart in a radial direction relative to a central axis; a flexible film clamped to a lower portion of the substrate carrier, the flexible film including a main film, a plurality of vertical films, and a plurality of pressurizing chambers, the plurality of vertical films extending from the main film in a vertical direction, the plurality of pressurizing chambers being defined by the plurality of vertical films, each of the plurality of pressurizing chambers being connected to a corresponding fluid channel in the plurality of fluid channels, wherein the main film includes a plurality of main regions and a plurality of sub-regions, the plurality of main regions being divided in a radial direction relative to the central axis, the plurality of sub-regions being sequentially arranged in a circumferential direction relative to the central axis, and being disposed in the plurality of main regions; a plurality of temperature elements, respectively located in the plurality of sub-regions of the main film, and configured to apply local heat to the substrate; and a plurality of pressure elements, respectively located on the plurality of temperature elements, and configured to apply local pressure to the main film.

[0009] According to some example embodiments, a polishing head includes: a substrate carrier configured to be detachably fixed to a driving shaft and to pressurize a substrate and rotate the substrate, the substrate carrier including a plurality of fluid channels penetrating from an upper surface of the substrate carrier to a lower surface of the substrate carrier, the plurality of fluid channels being spaced apart in a radial direction relative to a central axis; a flexible membrane clamped to a lower portion of the substrate carrier, the flexible membrane including a main membrane, a plurality of vertical membranes, and a plurality of pressurizing chambers, the plurality of vertical membranes extending from the main membrane in a vertical direction, the plurality of pressurizing chambers being defined by the plurality of vertical membranes, and the plurality of pressurizing chambers being spaced apart in a radial direction relative to a central axis. Each of which is connected to a corresponding fluid channel in the plurality of fluid channels, wherein the main film includes a plurality of main regions and a plurality of sub-regions, the plurality of main regions are divided along a radial direction relative to a central axis, the plurality of sub-regions are located in the plurality of main regions, so that the lower surface of the main film is divided into a plurality of unit regions, and the plurality of unit regions are arranged into a plurality of columns and a plurality of rows; a plurality of temperature elements, which are respectively located in the plurality of sub-regions of the main film and are configured to apply local heat to the substrate; and a plurality of pressure elements, which are respectively located on the plurality of temperature elements and are configured to apply local pressure to the main film.

[0010] According to some example embodiments, a polishing head may include: a substrate carrier providing a plurality of fluid channels; a flexible membrane including a plurality of pressurized chambers fluidly connected to the plurality of fluid channels and clamped to a lower portion of the substrate carrier to form the plurality of pressurized chambers; a plurality of temperature elements configured to apply local heat to the substrate; and a plurality of pressure elements configured to apply local pressure to the flexible membrane.

[0011] The flexible film may include: a main film having a first surface in contact with a substrate and a second surface opposite to the first surface; and a plurality of vertical films extending from the main film in a vertical direction to define a plurality of pressurized chambers divided along a radial direction about a central axis. The main film may provide a main region provided with a plurality of pressurized chambers and a plurality of sub-regions dividing the main region. A plurality of pressure elements and a plurality of temperature elements may be respectively provided on the plurality of sub-regions of the main film.

[0012] Therefore, the asymmetric distribution and flatness of the substrate can be improved by local pressure control. In addition, by direct and local temperature control, the heating time and cooling time can be shortened, and defects in the substrate can be prevented by reducing the solidification of the slurry. Additionally, unintentional damage to the metal layer of the substrate can be prevented by temperature control. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 is a cross-sectional view illustrating a chemical mechanical polishing apparatus according to some example embodiments.

[0014] Figure 2 It is shown Figure 1 Cross-sectional view of the chemical mechanical polishing equipment in FIG.

[0015] Figure 3 is a perspective view illustrating a polishing head according to some example embodiments.

[0016] Figure 4 It is along Figure 3 A cross-sectional view taken along line AA' in FIG.

[0017] Figure 5 is a cross-sectional view illustrating a polishing head and a polishing carrier according to some example embodiments.

[0018] Figure 6 It is shown Figure 3 A perspective view of the flexible membrane of the polishing head.

[0019] Figure 7 and Figure 8 It is shown Figure 5 A plan view of the lower surface of the flexible membrane.

[0020] Fig. 9 is a plan view showing sub-regions each having an electrode and an internal wiring connected to the electrode.

[0021] Fig.10 It is along Figure 7 A cross-sectional view taken along line BB' in FIG.

[0022] Fig.11 It is shown Fig.10 An enlarged cross-sectional view of portion “M” in FIG.

[0023] Fig.12 It is shown Fig.11 Cross-sectional view of the temperature element and the pressure element.

[0024] Fig.13 is a plan view illustrating a flexible film according to some example embodiments.

[0025] Fig.14 is an enlarged cross-sectional view illustrating a pressure element and a temperature element according to some example embodiments. DETAILED DESCRIPTION

[0026] Hereinafter, example embodiments will be explained in detail with reference to the accompanying drawings. The same reference numerals in the accompanying drawings represent the same components, and the sizes of the components in the accompanying drawings may be exaggerated for ease of explanation. In addition, the embodiments to be described below are merely examples, and various modifications may be made to such embodiments. In addition, when the term "approximately" or "substantially" is used in conjunction with numerical values ​​and / or geometric terms in this specification, it is intended that the associated numerical values ​​include manufacturing tolerances (e.g., ±10%) around the stated numerical values. In addition, regardless of whether numerical values ​​and / or geometric terms are modified to "approximately" or "substantially", it will be understood that these values ​​should be interpreted as including manufacturing tolerances or operating tolerances (e.g., ±10%) around the stated numerical values ​​and / or geometric shapes.

[0027] Additionally, although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the scope of the present disclosure, the first element, component, region, layer or part discussed below may be named as the second element, component, region, layer or part.

[0028] Figure 1 is a cross-sectional view illustrating a chemical mechanical polishing (CMP) apparatus according to some example embodiments. Figure 2 It is shown Figure 1 Cross-sectional view of the chemical mechanical polishing equipment in FIG.

[0029] Reference Figure 1 and Figure 2, a chemical mechanical polishing (CMP) apparatus may include a platen 20, a polishing pad 30, a polishing carrier apparatus having a polishing head 100, a slurry supply apparatus 40, and a pad conditioner 50. In at least some embodiments, the CMP apparatus may also include and / or be connected to a control circuit (not shown) configured to control the operation of the CMP apparatus. The control circuit may include a processing circuit, including but not limited to a processor, a central processing unit (CPU), a controller, an arithmetic logic unit (ALU), a digital signal processor, a microcomputer, a field programmable gate array (FPGA), a system on a chip (SoC), a programmable logic unit, a microprocessor, or any other device capable of responding to instructions and executing instructions in a defined manner. In some example embodiments, the control circuit may be at least one of an application specific integrated circuit (ASIC) and / or an ASIC chip. The control circuit may be constructed as a dedicated machine by executing a computer-readable program code stored on a storage device. The program code may include a program or computer-readable instruction, a software element, a software module, a data file, a data structure, etc. that can be implemented by one or more hardware devices (such as one or more instances of the control circuit mentioned above).

[0030] The platen 20 may be configured to rotate the polishing pad 30 at a desired speed so as to polish a substrate such as a wafer. The polishing pad 30 may be located on the platen 20. The platen 20 may have a disc shape. The platen driving unit 22 may be connected to the platen 20 and may include a rotating shaft driven by, for example, a driving motor, and the platen 20 may be configured to be rotated by the rotating shaft.

[0031] The polishing pad 30 may include abrasive particles for polishing the substrate. The polishing pad 30 may include an elastic material (such as polyurethane) having a rough surface. The polishing pad 30 may be configured to rotate with the platen 20. The polishing pad 30 may be used to chemically planarize the wafer. For example, the polishing pad 30 may include a working surface 32 that contacts the wafer.

[0032] The slurry supply device 40 can dispense a slurry solution 42 onto the polishing pad 30 through a slurry supply nozzle (eg, during a chemical mechanical polishing process). The slurry solution 42 can be used to chemically planarize the wafer.

[0033] The polishing head 100 may hold a substrate and press a surface of the substrate to be polished to the polishing pad 30. The polishing head 100 may be connected to and coupled with a driving shaft 212 of a polishing carrier device to move the surface of the substrate onto the polishing pad 30.

[0034] A pad conditioner 50 may be provided to reduce the wear of the polishing pad 30. After a period of use, the protrusions on the polishing pad 30 may be worn due to the friction between the polishing pad 30 and the substrate. The pad conditioner 50 may regenerate the rough surface of the polishing pad 30 to a certain level (e.g., with a tolerance) by grinding the surface of the polishing pad 30. Thus, the polishing pad 30 may be used for an extended period of time without being replaced.

[0035] The chemical mechanical polishing apparatus may include components substantially the same as or similar to those of a conventional CMP apparatus except for the polishing carrier apparatus. Hereinafter, the polishing carrier apparatus will be described in detail.

[0036] The polishing carrier device may be adapted to pressurize the wafer with the polishing head 100 above the platen 20, and to rotate the polishing head 100 on the central axis of the platen 20, and to rotate the polishing head 100 on the central axis of the polishing head 100. Thus, the polishing head 100 may adsorb the wafer and perform rotational movement and translational movement on the platen 20.

[0037] like Figure 2 As shown in FIG. 1 , the polishing carrier device 200 may include a polishing head 100, an upper module 202 having a rotary joint 210, and a sealed housing 220. Additionally, the polishing carrier device 200 may further include a driving unit 230 and a gas supply unit 240.

[0038] The rotary joint 210 may include a driving shaft 212 having a plurality of gas passages 213 formed in a longitudinal direction thereof. The rotary joint 210 may rotatably support the driving shaft 212 and allow a fluid to flow through the gas passages 213 in a sealed state.

[0039] The driving unit 230 may include a driving motor for rotating the driving shaft 212. The driving shaft 212 may be connected to the driving motor to rotate on the driving shaft 212. A driven gear may be installed at an upper portion of the driving shaft 212, and the driving motor may rotate the driving gear meshed with the driven gear to rotate the driving shaft 212. The driving motor may be installed at an upper portion of the driving shaft 212, but is not limited thereto. For example, the driving motor may be connected to one end of the driving shaft 212 to rotate the driving shaft.

[0040] The rotary joint 210 may be connected to the gas supply unit 240 through a gas pipe 242. The gas pipe 242 may be connected to the gas passage 213 of the driving shaft 212 of the rotary joint 210.

[0041] The polishing head 100 may be fixed to the drive shaft 212 to rotate with the drive shaft 212. The polishing head 100 may be fixed to the flange 214 of the drive shaft 212 by a clamp (not shown). In at least some embodiments, the polishing head 100 may be detachable.

[0042] The sealing housing 220 may be installed at the lower portion of the upper module 202. The sealing housing 220 may have an annular shape extending along the circumference of the flange 214 of the drive shaft 212. The sealing housing 220 may be interposed between the upper module 202 and the polishing head 100. The fluid sealing portion 150 (see Figure 3 ) can be fixedly coupled to the lower surface of the sealed housing 220. The flange 214 of the drive shaft 212 can be a rotating body, and the sealed housing 220 can be a non-rotating body. For example, a bearing structure 216 can be provided between the flange 214 and the sealed housing 220 to reduce friction between the flange 214 and the sealed housing 220.

[0043] Therefore, the gas supply unit 240 may be configured to supply gas to the polishing head 100 through the gas channel 213 of the driving shaft 212 for suction and pressurization of the object to be polished. The gas supply unit 240 may supply gas to the polishing head 100 through the gas channel 213 .

[0044] The gas supply unit 240 can independently supply gases with different pressures through the gas pipeline 242. Therefore, gases with different pressures can be independently supplied to the polishing head 100 through the plurality of gas channels 213. As will be described later, the flexible membrane 140 (see FIG. 21) with the polishing head 100 Figure 4 ) The gas supplied by the multiple gas channels 213 that are fluidly connected to the multiple pressure chambers can be controlled to have a different pressure for each of the multiple pressure chambers.

[0045] The polishing head 100 may be fixed to the drive shaft 212 to rotate together with the drive shaft 212. The housing 110 (see Figure 3 ) may be fixed to the flange 214 of the driving shaft 212. The fixing ring 160 of the polishing head 100 may be fixed to the sealing housing 220. Hereinafter, the polishing head will be described in detail.

[0046] Figure 3 is a perspective view illustrating a polishing head according to some example embodiments. Figure 4 It is along Figure 3 A cross-sectional view taken along line AA' in FIG. Figure 5 is a cross-sectional view illustrating a polishing head and a polishing carrier according to some example embodiments.

[0047] Reference Figures 3 to 5, the polishing head 100 may include: a substrate carrier, which is fixed to the drive shaft 212 (configured to rotate with the polishing head 100) and adsorbs and pressurizes a substrate such as a wafer W; and a fixing ring 130, which is fixed below the substrate carrier and surrounds the circumference of the substrate. Additionally, the polishing head 100 may include a flexible membrane 140, which is disposed at the lower portion of the substrate carrier and is in direct contact with the upper surface of the substrate. In addition, the flexible membrane 140 may include a plurality of first temperature elements 300 and a plurality of first pressure elements 400.

[0048] The substrate carrier may include a carrier body rotatable together with the driving shaft 212. The flexible film 140 may be configured to be clamped to the lower portion of the carrier body to form a plurality of pressurized chambers Z1, Z2, Z3, Z4, and Z5. The carrier body may include a housing 110 detachably fixed to the driving shaft 212 and a base assembly 120 installed below the housing 110 to be rotatable together with the housing 110.

[0049] The housing 110 may have a cylindrical shape. The upper end portion of the housing 110 may be fixed to the flange 214 of the drive shaft 212 by a clamp. A plurality of first passages 112 and 114 may be formed to penetrate the housing 110. Although not shown in the drawings, a sealing member such as an O-ring may be provided between the upper surface of the housing 110 and the lower surface of the drive shaft 212 to form a fluid-tight seal between the first passage and the gas passage.

[0050] Therefore, the first passages 112 and 114 for pneumatic control of the polishing head 100 may be respectively in fluid communication with the gas passage 213 formed in the driving shaft 212 .

[0051] The base assembly 120 may be a component that is vertically movable in the lower portion of the housing 110. The base assembly 120 may include a plurality of base blocks rotatably assembled to the lower portion of the housing 110 together with the housing 110. For example, the plurality of base blocks may be stacked on each other in the vertical direction and the radial direction to have a cylindrical shape in the lower portion of the housing 110. The rolling diaphragm 122 may be clamped between the inner base block and the outer base block so that the carrier body has a universal joint structure.

[0052] The fixing ring 130 may be fixed to the lower portion of the carrier body. The fixing ring 130 may be an annular ring fixed to the outer edge of the base assembly 120. When the base assembly 120 moves downward by pneumatic pressure as a working fluid, the fixing ring 130 may move downward to apply a load to the polishing pad 30.

[0053] The flexible film 140 may be clamped to the lower surface of the base assembly 120 within the fixing ring 130. The flexible film 140 may include a main film 142 having a disc shape and a plurality of vertical films 144. The main film may include a first surface 142a configured to contact the backside surface of the wafer W (see Fig.10 ) and a second surface 142b (see Fig.10 ). The first surface 142a may also be referred to as a lower surface, and the second surface 142b may also be referred to as an upper surface. A plurality of vertical films may extend from the second surface of the main film in a vertical direction and be clamped to the lower portion of the base assembly 120 to define first to fifth pressurized chambers Z1, Z2, Z3, Z4, and Z5.

[0054] The first surface 142a of the main film 142 may provide a mounting surface for the wafer W. The ends of the vertical films 144 may be clamped to the base assembly 120 by a clamping ring so that an annular or circular pressurized chamber may be formed between the vertical films 144. The number of pressurized chambers may be determined according to the number of vertical films. In some embodiments, the flexible film may have a five-zone type film for forming five pressurized chambers, however, the example is not limited thereto, and the number of pressurized chambers may vary (e.g., may be greater than and / or less than five).

[0055] In some example embodiments, a plurality of second channels 124 may be formed to penetrate the base assembly 120. The first channel 114 and the corresponding second channels 124 may be connected to each other to form a first fluid channel for supplying gas G1 to each of the pressurized chambers Z1, Z2, Z3, Z4, and Z5. Each of the pressurized chambers Z1, Z2, Z3, Z4, and Z5 may be fluidly connected to the gas channel 213 of the drive shaft 212 through the first fluid channel (i.e., the first channels 112 and 114 of the housing 110 and the second channel 124 penetrating the base assembly 120).

[0056] Therefore, the pressurized chambers Z1, Z2, Z3, Z4, and Z5 may be respectively fluidly connected to the plurality of gas pipes 242 of the gas supply unit 240 so that the pressures in the pressurized chambers may be independently controlled. At least one of the pressurized chambers may be evacuated to provide a vacuum atmosphere to vacuum adsorb the wafer W. At least one of the pressurized chambers may be filled with a predetermined amount of gas to pressurize the wafer W.

[0057] A plurality of first temperature elements 300 and a plurality of first pressure elements 400 may be disposed under the flexible film 140 to apply localized heat and pressure to the substrate.

[0058] In some example embodiments, the fluid sealing portion 150 may be a mechanical seal configured to seal a fluid and allow the fluid to flow in a direction perpendicular to the rotation axis of the base assembly 120 when the base assembly 120 of the carrier body rotates. The fluid sealing portion 150 may include a rotating ring 170 that rotates together with the carrier body on an upper surface of the carrier body, and a fixed ring 160 that is fixedly supported on the rotating ring 170 to be slidably movable so as to be in close contact with the rotating ring 170.

[0059] The fixed ring 160 and the rotating ring 170 can maintain a fluid seal while sliding in close contact with each other. The fixed ring 160 and the rotating ring 170 having surfaces facing each other may include a low friction material such as silicon carbide. The rotating ring 170 may be fixedly coupled to the upper surface of the base assembly 120 outside the housing 110. The rotating ring 170 may include at least a portion of the upper base block of the base assembly 120.

[0060] Hereinafter, examples of the flexible film will be described in detail.

[0061] Figure 6 It is shown Figure 3 A perspective view of the flexible membrane of the polishing head. Figure 7 and Figure 8 It is shown Figure 5 A plan view of the lower surface of the flexible membrane. Fig. 9 is a plan view showing sub-regions each having an electrode and an internal wiring connected to the electrode. Fig.10 It is along Figure 7 A cross-sectional view taken along line BB' in FIG. Fig.11 It is shown Fig.10 An enlarged cross-sectional view of portion “M” in FIG. Fig.12 It is shown Fig.11 Cross-sectional view of the temperature element and the pressure element.

[0062] Reference Figures 6 to 12 , the flexible film 140 may include a disc-shaped main film 142 and a plurality of vertical films 144 protruding in a vertical direction on the disc-shaped main film 142. The main film 142 may include a first surface 142a in contact with the backside surface of the wafer W and a second surface 142b opposite to the first surface 142a. Additionally, the flexible film 140 may include a plurality of first temperature elements 300 and a plurality of first pressure elements 400 disposed on the second surface 142b.

[0063] The plurality of vertical films 144 may have a plurality of annular walls extending concentrically with each other when viewed in a plan view.The plurality of vertical films 144 may be disposed on the second surface 142b of the main film 142 and spaced apart from each other in a radial direction.

[0064] The flexible film 140 may include first to fifth pressurized chambers Z1, Z2, Z3, Z4, and Z5 defined by a main film 142 and a plurality of vertical films 144. For example, the lower surfaces of the first to fifth pressurized chambers Z1, Z2, Z3, Z4, and Z5 may be defined by the main film 142, and the plurality of vertical films 144 may divide the first to fifth pressurized chambers Z1, Z2, Z3, Z4, and Z5. The main film 142 may include a plurality of main regions and a plurality of sub-regions that respectively subdivide the plurality of main regions.

[0065] First to fifth compression chambers Z1 , Z2 , Z3 , Z4 , and Z5 may be respectively disposed on first to fifth main areas AR1 , AR2 , AR3 , AR4 , and AR5 of the main film 142 divided by the plurality of vertical films 144 .

[0066] The first to fifth main regions AR1, AR2, AR3, AR4, and AR5 may be regions divided along the circumferential direction with respect to the central axis. For example, the first to fifth main regions AR1, AR2, AR3, AR4, and AR5 may be regions separated by a plurality of vertical films 144 to be concentric with the center O of the first surface 142a of the main film 142. For example, the outermost radius of the first to fifth main regions AR1, AR2, AR3, AR4, and AR5 may gradually increase from the center O.

[0067] The first to fifth main areas AR1 , AR2 , AR3 , AR4 , and AR5 may include a plurality of sub-areas that subdivide the first to fifth main areas AR1 , AR2 , AR3 , AR4 , and AR5 , respectively.

[0068] A plurality of sub-regions may be provided in each of the first to fifth main regions AR1, AR2, AR3, AR4, and AR5, and may be sequentially arranged in a circumferential direction with respect to the central axis. For example, the first to fifth main regions AR1, AR2, AR3, AR4, and AR5 may include a plurality of sub-regions divided by at least one extension line passing through the center O of the first surface 142a of the main film 142. For example, each of the first to fifth main regions AR1, AR2, AR3, AR4, and AR5 may be divided into four sub-regions by a first extension line EL1 and a second extension line EL2 passing through the center O of the first surface 142a of the main film 142.

[0069] For example, the first main area AR1 may include multiple first sub-areas S11, S12, S13 and S14, the second main area AR2 may include multiple second sub-areas S21, S22, S23 and S24, the third main area AR3 may include multiple third sub-areas S31, S32, S33 and S34, the fourth main area AR4 may include multiple fourth sub-areas S41, S42, S43 and S44, and the fifth main area AR5 may include multiple fifth sub-areas S51, S52, S53 and S54.

[0070] For example, the plurality of sub-regions may have the same central angle. For example, partial sub-regions S14, S24, S34, S44, and S54 having the same central angle CD among the plurality of sub-regions may be sequentially arranged in the radial direction.

[0071] For example, the sizes of the plurality of sub-regions included in a single main region may be the same. Alternatively, although not shown in the drawings, the sizes of the plurality of sub-regions may be different.

[0072] The flexible film 140 may include a plurality of cavities CA disposed on each of the plurality of sub-regions. The plurality of cavities CA may be a plurality of hollow spaces disposed in and / or defined by the main film 142 .

[0073] In some example embodiments, a plurality of first temperature elements 300 may be disposed in a plurality of cavities CA of the main film 142 on each of the sub-regions. The temperature element may include a thermoelectric element. The thermoelectric element may be a Peltier element configured to change temperature based on the Peltier effect, which controls the amount of heat generated or absorbed by applying current to a metal. For example, the thermoelectric element may include a plurality of flexible polymers, a plurality of electrodes, and a plurality of n-type and p-type semiconductors, and may absorb and generate heat when current is applied. For example, a plurality of electrodes may include a metal material to which current is applied. Additionally, a plurality of flexible polymers may include an insulating material.

[0074] For example, each of the plurality of first temperature elements 300 may include a plurality of flexible structures 310 including a flexible polymer, a plurality of first electrodes 320 disposed on the plurality of flexible structures 310, and a plurality of semiconductors 330 disposed respectively between the plurality of first electrodes 320. The plurality of flexible structures 310 may include a first flexible plate 311 and a second flexible plate 313 disposed respectively on the first surface 142a and the second surface 142b of the main film 142 and / or between the first surface 142a and the second surface 142b of the main film 142, the first flexible plate 311 and the second flexible plate 313 including a flexible polymer. For example, the plurality of first temperature elements 300 may each have a lower surface 300a disposed to face the first surface 142a of the main film 142. The plurality of first electrodes 320 may include a plurality of first metal plates 321 and 323 disposed on the first flexible plate 311 and a second metal plate 325 disposed on the second flexible plate 313. The plurality of semiconductors 330 may include a P-type semiconductor 331 and an N-type semiconductor 333. In some embodiments, the P-type semiconductor 331 and the N-type semiconductor 333 may have different charge carrier densities. The plurality of semiconductors 330 may also be referred to as semiconductor elements, thermoelectric elements, and / or as Peltier elements. The plurality of first temperature elements 300 may be respectively disposed in the plurality of cavities CA of the main film 142. For example, the plurality of first temperature elements 300 may be respectively disposed on the sub-regions S11 and S13 of the first surface 142a of the main film 142.

[0075] Therefore, the flexible film can locally absorb or generate heat in the sub-regions that subdivide the main regions AR1, AR2, AR3, AR4, and AR5 through the plurality of first temperature elements 300. For example, a wafer adsorbed on the first surface 142a of the main film 142 can be directly heated and / or cooled through the plurality of first temperature elements 300.

[0076] In some example embodiments, the flexible film 140 may have a plurality of recesses R on the second surface 142b of the main film 142. The plurality of recesses R may be provided on each of the plurality of first temperature elements 300. The plurality of recesses R may be channels through which a fluid can move to cool the plurality of first temperature elements 300. The fluid may be referred to as a heat regulating fluid, and may include, for example, a gas (e.g., nitrogen, air, etc.) and / or a non-conductive liquid.

[0077] In some example embodiments, a plurality of first pressure elements 400 may be respectively disposed on a plurality of first temperature elements 300 in a plurality of cavities CA of the main film 142. For example, each of the plurality of first pressure elements 400 may have a first (or lower) surface 400a and a second (or upper) surface 400b, and may be arranged so that the first surface 400a faces a corresponding second surface 300b of a corresponding one of the plurality of first temperature elements 300. The pressure element may include an inverse piezoelectric element. An inverse piezoelectric element may be an element that generates an electric current when pressure is applied to an object containing a specific material. For example, an inverse piezoelectric element may include a plurality of electrodes and a piezoelectric polymer disposed between the plurality of electrodes, and may be compressed or expanded when an electric current is applied. For example, the plurality of electrodes may include a metal material to which an electric current is applied.

[0078] Each of the plurality of first pressure elements 400 may include a plurality of second electrodes 410 and a piezoelectric structure 420 disposed between the plurality of second electrodes 410 and including, for example, a piezoelectric polymer. The piezoelectric structure 420 may be configured to expand and / or contract based on, for example, application and / or directionality of a current and / or voltage across the piezoelectric structure 420.

[0079] The plurality of first pressure members 400 may be respectively disposed in the plurality of cavities CA of the main film 142. For example, the plurality of first pressure members 400 may be respectively disposed in the sub-regions S11 and S13 of the first surface 142a of the main film 142.

[0080] Therefore, through the plurality of first pressure elements 400 , the flexible film may apply local pressure to sub-areas subdividing the main areas AR1 , AR2 , AR3 , AR4 , and AR5 .

[0081] Each of the plurality of first pressure elements 400 may have a first width W1, and each of the plurality of first temperature elements 300 may have a second width W2. For example, the first width and the second width may be the same and / or substantially similar.

[0082] In some example embodiments, the flexible film 140 may further include a plurality of third electrodes ED and a plurality of wirings EW respectively providing electrical connections between the plurality of third electrodes disposed on the same sub-region. The plurality of third electrodes may be electrically connected to the pressure element and the temperature element, respectively.

[0083] For example, the plurality of third electrodes ED may be arranged along the first extension line EL1 and / or the second extension line EL2 passing through the center O of the first surface 142a of the main film 142. Although the plurality of wirings EW and the plurality of third electrodes ED are shown as being disposed on the first surface 142a of the main film 142, examples are not limited thereto, and for example, the plurality of wirings EW and the plurality of third electrodes ED may be disposed in the main film 142.

[0084] As mentioned above, the polishing head of the chemical mechanical polishing equipment may include: a substrate carrier having a plurality of fluid channels; a flexible membrane 140, which includes a plurality of pressurized chambers fluidly connected to the plurality of fluid channels and is clamped to the lower portion of the substrate carrier to form the plurality of pressurized chambers; a plurality of first temperature elements 300, which are configured to apply local heat to the substrate; and a plurality of first pressure elements 400, which are configured to apply local pressure to the flexible membrane.

[0085] The flexible film 140 may provide a main film 142 having a first surface in contact with the substrate and a second surface opposite to the first surface, and a plurality of vertical films 144 extending from the main film in a vertical direction to define a plurality of pressurized chambers divided along a circumferential direction about a central axis of the main film 142. The main film 142 may include a main region provided with a plurality of pressurized chambers and a plurality of sub-regions dividing the main region. A plurality of first pressure elements 400 and a plurality of first temperature elements 300 may be respectively provided on the plurality of sub-regions of the main film.

[0086] Thus, the asymmetric distribution and flatness of the substrate can be improved by local pressure control. In addition, by direct and local temperature control, the heating time and cooling time can be shortened, and defects of the substrate can be prevented and / or reduced by reducing the solidification of the slurry. Additionally, unintentional damage to the metal layer of the substrate can be prevented and / or reduced by temperature control.

[0087] Hereinafter, a flexible film according to some example embodiments will be described.

[0088] Fig.13 is a plan view illustrating a flexible film according to some example embodiments.

[0089] Except for the sub-regions, the flexible membrane may be the same as above with reference to Figures 6 to 12 The flexible film 140 described is substantially the same or similar. Therefore, the same components are denoted by the same reference numerals, and repeated description of the same components is omitted.

[0090] Reference Fig.13, the flexible film 141 may include a disk-shaped main film 142 and a plurality of vertical films 144 extending in a vertical direction on the disk-shaped main film 142. The main film 142 may include a first surface 142a in contact with the backside surface of the wafer W and a second surface 142b opposite to the first surface 142a. Additionally, the flexible film 141 may include a plurality of first temperature elements 300 and a plurality of first pressure elements 400 disposed within the main film 142.

[0091] A plurality of vertical films 144 (see Figure 6 ) may have a plurality of annular walls that extend concentrically with each other when viewed in a plan view. A plurality of vertical films 144 may be disposed on the second surface 142b of the main film 142 and spaced apart from each other in a radial direction. The main film 142 may include a plurality of main regions and a plurality of sub-regions that subdivide the plurality of main regions.

[0092] The sub-region US may be a region where the plurality of first pressure elements 400 and the plurality of first temperature elements 300 are respectively disposed. The plurality of first temperature elements 300 and the plurality of first pressure elements 400 may be respectively disposed on the sub-region US in the plurality of cavities CA of the main film 142 .

[0093] The sub-region US may include a plurality of unit regions of the same and / or substantially similar size arranged in a plurality of columns and a plurality of rows. The sub-region may include a plurality of unit regions that subdivide a plurality of main regions AR1, AR2, AR3, AR4, and AR5 of the main film 142, and may be uniformly distributed throughout the first surface 142a of the main film 142. In at least some embodiments, some of the plurality of unit regions may be shared by the boundaries between the plurality of main regions AR1, AR2, AR3, AR4, and AR5 and / or extend above the boundaries between the plurality of main regions AR1, AR2, AR3, AR4, and AR5.

[0094] For example, the subregion US may include a plurality of unit regions sequentially arranged in a first horizontal direction (X direction) and a second horizontal direction (Y direction) perpendicular to the first horizontal direction (X direction). For example, the unit region may have a rectangular shape when viewed in a plan view.

[0095] The sub-region US may include a plurality of third electrodes ED configured to electrically connect each of the plurality of first pressure elements 400 and each of the plurality of first temperature elements 300 respectively disposed on the plurality of unit regions.

[0096] Hereinafter, a pressure element and a temperature element according to some example embodiments will be described.

[0097] Fig.14is an enlarged cross-sectional view illustrating a pressure element and a temperature element according to some example embodiments.

[0098] In some example embodiments, the plurality of second temperature elements 301 may be disposed on each of the sub-regions in the plurality of cavities CA of the main film 142. For example, the plurality of second temperature elements 301 may be disposed on the sub-regions S11 and S13 of the first surface 142a in the main film 142, respectively.

[0099] Therefore, the flexible film can locally absorb and / or generate heat on the sub-regions that subdivide the main regions AR1, AR2, AR3, AR4, and AR5 through the plurality of second temperature elements 301. For example, a wafer adsorbed on the first surface 142a of the main film 142 can be directly heated and / or cooled through the plurality of second temperature elements 301.

[0100] The temperature element may include a thermoelectric element. The thermoelectric element may be, for example, a Peltier element based on the Peltier effect, which controls the amount of heat generated or absorbed by applying an electric current to, for example, the Peltier element. For example, the thermoelectric element may include a plurality of flexible polymers, a plurality of electrodes, and a plurality of n-type and p-type semiconductors, and may be configured to absorb and generate heat in response to the application and / or direction of the applied current. For example, a plurality of electrodes may include a metallic material to which an electric current is applied. Additionally, a plurality of flexible polymers may include an insulating material.

[0101] In some example embodiments, the plurality of second pressure elements 401 may be respectively disposed in the plurality of cavities CA of the main film 142 of the flexible film 140. Each of the plurality of second pressure elements 401 may include a first surface 401a and a second surface 401b facing each other. For example, the first surface 401a may be in contact with each of the plurality of second temperature elements 301. For example, the plurality of second pressure elements 401 may be respectively disposed on the plurality of second temperature elements 301, and the plurality of second temperature elements 301 are disposed on the sub-regions S11 and S13 of the first surface 142a in the main film 142.

[0102] The plurality of second pressure elements 401 may each include an inverse piezoelectric element. An inverse piezoelectric element may be an element that generates an electric current when pressure is applied to an object containing a piezoelectric material and / or may be compressed or expanded when an electric current is applied. For example, the inverse piezoelectric element may include a plurality of electrodes and a piezoelectric polymer disposed between the plurality of electrodes, and may be compressed or expanded when an electric current is applied, and generates an electric current when compressed and / or expanded. For example, the plurality of electrodes may include a metal material to which an electric current is applied.

[0103] Thus, by means of the plurality of second pressure elements 401 , the flexible membrane may apply local pressure to sub-areas subdividing the main areas AR1 , AR2 , AR3 , AR4 , and AR5 .

[0104] The multiple second temperature elements 301 may include a base portion BP, a pair of first extension portions EP1 and EP2, and a pair of second extension portions EP3 and EP4, the base portion BP being arranged below the multiple second pressure elements 401 and adjacent to the first surface 142a of the main film 142, the pair of first extension portions EP1 and EP2 surrounding the sides of each of the multiple second pressure elements 401 and extending from the base portion toward the multiple recesses R in the vertical direction (Z direction), the pair of second extension portions EP3 and EP4 being arranged on the multiple second pressure elements 401 and extending from the pair of first extension portions toward the center extension line ML of each of the multiple recesses R.

[0105] The base portion BP may include a first inner surface IS1 and a first outer surface OS1 facing each other, the first extension structure EP1 in a pair of first extension portions EP1 and EP2 may include a second inner surface IS2 and a second outer surface OS2 facing each other, the second extension structure EP2 in a pair of first extension portions EP1 and EP2 may include a third inner surface IS3 and a third outer surface OS3 facing each other, and the third extension structure EP3 in a pair of second extension portions EP3 and EP4 may include a fourth inner surface IS4 and a fourth outer surface OS4 facing each other, and the fourth extension structure EP4 in a pair of second extension portions EP3 and EP4 may include a fifth inner surface IS5 and a fifth outer surface OS5 facing each other.

[0106] The plurality of second temperature elements 301 may provide a plurality of openings as receiving portions RP, and the receiving portions RP are defined by inner surfaces IS1, IS2, IS3, IS4, IS5 of the base portion BP, the pair of first extension portions EP1 and EP2, and the pair of second extension portions EP3 and EP4. The pressure elements may be disposed in the plurality of openings as the receiving portions RP.

[0107] Each of the pair of second extending portions EP3 and EP4 may have end surfaces ES1 and ES2 facing each other and spaced apart in the horizontal direction. The pair of second extending portions EP3 and EP4 may be provided on the plurality of second pressure members 401, and the end surfaces ES1 and ES2 may define a plurality of openings OP.

[0108] Each of the plurality of second pressure elements 401 and a contact surface of each of the plurality of second temperature elements 301 disposed on each of the plurality of second pressure elements 401 may have a third width W3. The third width W3 may be smaller than the second width W2 of the plurality of second temperature elements 301.

[0109] In some example embodiments, the flexible film 140 may have a plurality of recesses R on the second surface 142b of the main thin film 142. The plurality of recesses R may be provided on each of the plurality of second temperature elements 301. The plurality of recesses R may be channels through which a fluid moves to cool the plurality of second temperature elements 301.

[0110] The plurality of recesses R may be aligned with the plurality of openings OP of the plurality of second temperature elements 301 along the center extension line ML.

[0111] For example, the fluid introduced through the plurality of recesses R may pass through the openings OP of the plurality of second temperature elements 301 to contact the outer and inner surfaces of the plurality of second temperature elements 301 , thereby cooling the outer and inner surfaces.

[0112] The polishing head described above can be used in a chemical mechanical polishing process. The semiconductor device formed by the chemical mechanical polishing process can be used in various types of systems (such as computing systems). The semiconductor device can include a fin field effect transistor (finFET), a dynamic random access memory (DRAM), a NAND, etc. The system can be applied to computers, portable computers, laptop computers, personal digital assistants, tablet computers, mobile phones, digital music players, etc.

[0113] The above is an illustration of some example embodiments and should not be construed as limiting thereof. Although some example embodiments have been described, those skilled in the art will readily appreciate that many modifications are possible in the example embodiments without materially departing from the novel teachings and advantages of the present invention. Therefore, all such modifications are intended to be included within the scope of the example embodiments as defined in the claims.

Claims

1. A polishing head, comprising: a substrate carrier configured to be detachably fixed to a driving shaft and to pressurize a substrate and rotate the substrate, the substrate carrier comprising a flexible film, the flexible film comprising a main film, a plurality of vertical films, and a plurality of pressurizing chambers, the main film having a first surface in contact with the substrate and a second surface opposite to the first surface, the plurality of vertical films extending from the second surface of the main film in a vertical direction, and the plurality of pressurizing chambers being divided by the plurality of vertical films along a radial direction and about a central axis; a plurality of temperature elements located in the primary membrane and beneath the plurality of pressurization chambers, the plurality of temperature elements being configured to apply localized heat to the substrate; as well as A plurality of pressure elements are located in the main diaphragm and respectively on the plurality of temperature elements, wherein the plurality of pressure elements are configured to apply local pressure to the main diaphragm.

2. The polishing head according to claim 1, wherein: Each of the plurality of pressurized chambers of the flexible membrane includes a plurality of sub-areas sequentially arranged in a circumferential direction, and Wherein, the main film has a plurality of cavities corresponding to the plurality of sub-regions.

3. The polishing head according to claim 2, wherein: The plurality of temperature elements are respectively located in the plurality of cavities.

4. The polishing head according to claim 1, wherein: Each of the plurality of temperature elements comprises: a plurality of flexible structures comprising a flexible polymer; a plurality of first electrodes located between the plurality of flexible structures; and A plurality of semiconductors are located between the plurality of first electrodes.

5. The polishing head according to claim 1, wherein: Each of the plurality of pressure elements comprises: a plurality of second electrodes; and A piezoelectric structure is located between the plurality of second electrodes, wherein the piezoelectric structure includes a piezoelectric polymer.

6. The polishing head according to claim 1, wherein: The flexible membrane provides a plurality of recesses respectively located above the plurality of temperature elements, the plurality of recesses being configured to supply a heat regulating fluid to the plurality of temperature elements.

7. The polishing head according to claim 6, wherein: When viewed in cross-section, each of the plurality of temperature elements comprises: a base portion adjacent to a lower surface of the main film such that the base portion is located between the lower surface of the main film and a corresponding one of the plurality of pressure elements; a pair of first extending portions extending from the base portion toward the plurality of recesses in the vertical direction; and A pair of second extending portions are located above the plurality of pressure elements and extend from the pair of first extending portions toward a center extension line of each of the plurality of recesses.

8. The polishing head according to claim 7, wherein: The plurality of temperature elements define a plurality of openings, which are respectively defined by a pair of end surfaces of the pair of second extension portions facing each other, and are respectively located between corresponding recesses among the plurality of recesses and corresponding pressure elements among the plurality of pressure elements.

9. The polishing head according to claim 1, wherein: The flexible membrane includes a plurality of sub-areas, the plurality of sub-areas are located below the plurality of pressurizing chambers and divide the lower surface of the main film into a plurality of unit areas arranged in a plurality of columns and a plurality of rows, and The main film defines a plurality of cavities, and the plurality of cavities are located below the plurality of sub-regions and correspond to the plurality of sub-regions.

10. A polishing head, comprising: a substrate carrier configured to be detachably fixed to the drive shaft and to pressurize and rotate the substrate, the substrate carrier comprising a plurality of fluid channels penetrating from an upper surface of the substrate carrier to a lower surface of the substrate carrier, the plurality of fluid channels being spaced apart in a radial direction relative to a central axis; a flexible film clamped to a lower portion of the substrate carrier, the flexible film comprising a main film, a plurality of vertical films extending from the main film in a vertical direction, and a plurality of pressurized chambers defined by the plurality of vertical films, each of the plurality of pressurized chambers being connected to a corresponding fluid channel among the plurality of fluid channels, wherein the main film comprises a plurality of main regions and a plurality of sub-regions, the plurality of main regions being divided along the radial direction relative to the central axis, the plurality of sub-regions being sequentially arranged in a circumferential direction relative to the central axis and being disposed within the plurality of main regions; a plurality of temperature elements respectively located in a plurality of sub-regions of the main film and configured to apply localized heat to the substrate; and A plurality of pressure elements are respectively located on the plurality of temperature elements and are configured to apply local pressure to the main film.

11. The polishing head according to claim 10, wherein: The main film includes a plurality of cavities corresponding to the plurality of sub-regions, and Wherein, the plurality of temperature elements and the plurality of pressure elements are respectively located in the plurality of cavities.

12. The polishing head according to claim 10, wherein: The plurality of sub-areas are divided along at least one extension line, and the at least one extension line passes through the center of the lower surface of the main film.

13. The polishing head according to claim 12, wherein: The flexible membrane includes a plurality of electrodes on a lower surface of the main film, the plurality of electrodes being arranged along the at least one extension line and being electrically connected to the plurality of pressure elements and the plurality of temperature elements.

14. The polishing head according to claim 10, wherein: Each of the plurality of temperature elements comprises: a plurality of flexible structures comprising a flexible polymer; a plurality of first electrodes located between the plurality of flexible structures; and A plurality of semiconductors are located between the plurality of first electrodes.

15. The polishing head according to claim 10, wherein: Each of the plurality of pressure elements comprises: a plurality of second electrodes; and A piezoelectric structure is located between the plurality of second electrodes, wherein the piezoelectric structure includes a piezoelectric polymer.

16. The polishing head according to claim 10, wherein: The flexible membrane defines a plurality of recesses that are respectively located above the plurality of temperature elements and are configured to supply a heat regulating fluid to the plurality of temperature elements.

17. The polishing head according to claim 10, wherein: The width of each of the plurality of pressure elements has a first length, and the width of each of the plurality of temperature elements has a second length, and The first length and the second length are the same.

18. The polishing head according to claim 10, wherein: The width of each of the plurality of pressure elements has a first length, and the width of each of the plurality of temperature elements has a second length, and Wherein, a width of a contact surface between each of the plurality of pressure elements and each of the plurality of temperature elements is smaller than the second length.

19. The polishing head according to claim 10, wherein: Each of the plurality of temperature elements surrounds a corresponding pressure element of the plurality of pressure elements, respectively, and Each of the plurality of temperature elements defines a plurality of openings exposing upper surfaces of the plurality of pressure elements.

20. A polishing head, comprising: a substrate carrier configured to be detachably fixed to the drive shaft and to pressurize and rotate the substrate, the substrate carrier comprising a plurality of fluid channels penetrating from an upper surface of the substrate carrier to a lower surface of the substrate carrier, the plurality of fluid channels being spaced apart in a radial direction relative to a central axis; a flexible film clamped to a lower portion of the substrate carrier, the flexible film comprising a main film, a plurality of vertical films extending from the main film in a vertical direction, and a plurality of pressurized chambers defined by the plurality of vertical films, each of the plurality of pressurized chambers being connected to a corresponding fluid channel among the plurality of fluid channels, wherein the main film comprises a plurality of main regions and a plurality of sub-regions, the plurality of main regions being divided along the radial direction relative to the central axis, the plurality of sub-regions being located in the plurality of main regions so that a lower surface of the main film is divided into a plurality of unit regions, the plurality of unit regions being arranged into a plurality of columns and a plurality of rows; a plurality of temperature elements respectively located in a plurality of sub-regions of the main film and configured to apply localized heat to the substrate; and A plurality of pressure elements are respectively located on the plurality of temperature elements and are configured to apply local pressure to the main film.

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