An etching mechanism for integrated optoelectronic device manufacturing
By designing an etching mechanism for integrated optoelectronic device manufacturing, the problem of toxic gas leakage during the etching process is solved, safety protection and waste gas purification are achieved, and the smooth progress of the etching process is ensured.
Patent Information
- Application Number
- CN202411920798.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-25
- Publication Date
- 2025-10-17
- Estimated Expiration
- 2044-12-25
AI Technical Summary
During the etching process of optoelectronic devices, the toxic gases produced by etching are easy to leak, endangering the safety of operators, and existing equipment is difficult to effectively purify and discharge the waste gas.
An etching mechanism for the manufacture of integrated optoelectronic devices was designed, which includes a processing box, a cover, a sealing ring, an exhaust mechanism, a lifting mechanism, and a placement mechanism. The opening of the processing box is sealed by the sealing ring, and the exhaust gas is purified and discharged by an exhaust fan and activated carbon blocks. The lifting mechanism allows the device to contact the etching solution, and the placement mechanism ensures the stable placement of the device.
It effectively prevents the leakage of toxic gases, protects the safety of operators, and purifies and discharges waste gas to ensure the smooth progress of the etching process.
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Figure CN119943711B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of optoelectronic devices, in particular to an etching mechanism for integrated optoelectronic device manufacturing. BACKGROUND
[0002] The principle of wet etching is to remove materials by chemical reaction between chemical solution and materials. In the etching process, the wafer is immersed in a specific chemical etching solution, and the etching solution will react with the material to be removed. For example, hydrofluoric acid (HF) is often used to etch silicon dioxide (SiO2), and phosphoric acid (H3PO4) is used to etch silicon nitride (Si3N4). The etching rate is affected by factors such as etching solution concentration, temperature and substrate material. To ensure uniform etching, the etching solution may need to be stirred. Dry etching is to use reactive gas to react with materials in plasma or reactive ion etching (RIE) environment, or to remove materials by physical etching mechanism. Among them, reactive ion etching combines chemical reaction and physical sputtering effect, which can achieve high anisotropic etching and better control the direction and shape of etching. Physical sputtering etching mainly removes materials by the kinetic energy of ion impact on the material surface. Plasma enhanced chemical etching uses plasma to enhance the reaction part of the gas to improve the etching efficiency and selectivity.
[0003] When etching optoelectronic devices, tweezers and other clamps are often used to immerse the optoelectronic devices in liquid, which may cause leakage of waste gas generated during etching. SUMMARY
[0004] To achieve the above purpose, the technical scheme is as follows: an etching mechanism for integrated optoelectronic device manufacturing, comprising a processing box, a cover plate is arranged at the opening of the processing box, a sealing ring is fixedly connected to the edge side of the lower surface of the cover plate, the sealing ring is adapted to be pressed against the inner wall of the processing box, an exhaust mechanism penetrates the upper surface of the cover plate, by arranging the cover plate, the opening of the processing box can be closed, thereby preventing the leakage of toxic gas generated during the etching process of integrated optoelectronic device manufacturing, by arranging the sealing ring, the contact force between the cover plate and the inner wall of the processing box can be increased, so that the cover plate is tightly connected to the upper surface of the processing box, by arranging the exhaust mechanism, the waste gas generated in the processing box due to the etching of integrated optoelectronic device manufacturing can be purified and discharged, thereby achieving the effect of protecting the operator.
[0005] A connecting frame is fixedly connected to the inner wall of the processing box, and a lifting mechanism is provided at the inner wall of the connecting frame. By setting the lifting mechanism, the integrated optoelectronic device to be etched can be placed, and after the integrated optoelectronic device is placed, it can be moved downward until it contacts the etching liquid, thereby achieving the effect of etching the integrated optoelectronic device. The lifting mechanism includes a track frame, and a sliding column is slidably connected to the inner cavity of the track frame. The bottom end of the sliding column is fixedly connected to a sliding rod, and the sliding rod passes through the track frame. The bottom end of the sliding rod is fixedly connected to an arc plate, and the lower surface of the arc plate is fixedly connected to a placement mechanism. By setting the track frame, the sliding column can be limited so that the sliding column can drive the arc plate to move up and down. By setting the placement mechanism, the integrated optoelectronic device to be etched can be placed, and the etching liquid can flow to the outer surface of the integrated optoelectronic device.
[0006] Preferably, the exhaust mechanism includes a connecting pipe, which passes through the cover plate, and the bottom end of the connecting pipe is fixedly connected to a partition rod, and the bottom end of the partition rod is fixedly connected to a circular plate. By setting a plurality of partition rods, the gas generated by the etching of the integrated optoelectronic device can flow into the inner cavity of the connecting pipe through the gap between the partition rods.
[0007] Preferably, an exhaust fan is fixedly connected to the inner wall of the connecting pipe, an exhaust pipe is fixedly connected to the top end of the connecting pipe, and an activated carbon block is fixedly connected to the inner wall of the connecting pipe above the exhaust fan. The number of the activated carbon blocks is several, and the several activated carbon blocks are evenly distributed. By setting the exhaust fan, after the power is connected and the switch is turned on, the gas generated by the etching of the integrated optoelectronic device in the inner cavity of the processing box can be discharged from the processing box and discharged through the exhaust pipe. By setting the activated carbon block, it can come into contact with the gas generated by the etching of the integrated optoelectronic device and simply adsorb impurities in the exhaust gas during the contact process.
[0008] Preferably, the lifting mechanism also includes a hydraulic press, which is fixedly connected to the inner wall of the connecting frame. A moving rod is provided at the output end of the hydraulic press. By setting up the hydraulic press, the moving rod can be moved under power supply and control, so that the top plate can move up and down.
[0009] Preferably, the top end of the moving rod is fixedly connected to a first fixed plate, the outer surface of the first fixed plate is fixedly connected to a top plate, and the lower surface of the top plate is fixedly connected to the top end of the sliding column. By setting the top plate and the sliding column, the effect of up and down movement can be produced under the drive of the moving rod.
[0010] Preferably, the placing mechanism comprises a support plate fixedly connected to the lower surface of the arc-shaped plate, a plurality of holes are formed in the outer surface of the support plate, and a bottom plate is fixedly connected to the bottom end of the support plate.
[0011] Preferably, a water-permeable plate is symmetrically installed at the side of the upper surface of the bottom plate, and a drain pipe penetrates the axis of the upper surface of the bottom plate, so that the liquid required for etching of the integrated optoelectronic device can flow to the integrated optoelectronic device on the upper surface of the bottom plate.
[0012] Preferably, a support rod is fixedly connected to the upper surface of the bottom plate, a limiting sleeve is fixedly connected to the end of the support rod, a rotating block is rotatably connected to the inner cavity of the limiting sleeve, a placing plate is fixedly connected to the end of the rotating block away from the limiting sleeve, a plurality of water leakage holes are formed in the upper surface of the placing plate, and the limiting sleeve can limit the rotating block, so that the rotating block can drive the placing plate to rotate, thereby enabling the integrated optoelectronic device to be well placed under the action of the two placing plates.
[0013] The application provides an etching mechanism for integrated optoelectronic device manufacturing.
[0014] I. The etching mechanism for integrated optoelectronic device manufacturing can close the opening of the treatment box by means of the cover plate, thereby preventing the toxic gas generated in the etching process of the integrated optoelectronic device manufacturing from leaking out, increasing the contact force between the cover plate and the inner wall of the treatment box by means of the sealing ring, tightly connecting the cover plate to the upper surface of the treatment box, purifying and discharging the waste gas generated in the etching process of the integrated optoelectronic device manufacturing in the inner cavity of the treatment box by means of the exhaust mechanism, and achieving the effect of protecting the operator.
[0015] II. The etching mechanism for integrated optoelectronic device manufacturing can place the integrated optoelectronic device to be etched by means of the lifting mechanism, and enable the integrated optoelectronic device to move downward after being placed until it is in contact with the etching liquid, thereby achieving the effect of etching the integrated optoelectronic device, limiting the sliding column by means of the track frame, enabling the sliding column to drive the arc-shaped plate to move up and down, and placing the integrated optoelectronic device to be etched by means of the placing mechanism and enabling the etching liquid to flow to the outer surface of the integrated optoelectronic device.
[0016] III. The etching mechanism for manufacturing integrated optoelectronic devices, by setting the exhaust fan, the gas generated by etching integrated optoelectronic devices in the cavity of the processing box can be discharged from the processing box after the power is connected and the switch is opened, and discharged through the exhaust pipe. By setting the activated carbon block, the gas generated by etching integrated optoelectronic devices can be contacted, and the impurities in the exhaust gas can be simply adsorbed in the contacting process. BRIEF DESCRIPTION OF DRAWINGS
[0017] Figure 1 It is an external structure diagram of the etching mechanism for manufacturing integrated optoelectronic devices of the application;
[0018] Figure 2 It is a sectional structure diagram of the etching mechanism for manufacturing integrated optoelectronic devices of the application;
[0019] Figure 3 It is a structure diagram of the exhaust mechanism of the application;
[0020] Figure 4 It is a structure diagram of the lifting mechanism of the application;
[0021] Figure 5 It is a structure diagram of the lifting mechanism of the application;
[0022] Figure 6 It is a structure diagram of the placing mechanism of the application;
[0023] Figure 7 It is a structure diagram of the placing mechanism of the application.
[0024] In the figure: 1, processing box; 2, cover plate; 3, sealing ring; 4, exhaust mechanism; 5, connecting frame; 6, lifting mechanism; 41, connecting pipe; 42, spacer; 43, round plate; 44, exhaust fan; 45, exhaust pipe; 46, activated carbon block; 61, hydraulic machine; 62, moving rod; 63, first fixed plate; 64, track frame; 65, top plate; 66, sliding column; 67, sliding rod; 68, arc plate; 69, placing mechanism; 691, support plate; 692, bottom plate; 693, water permeable plate; 694, drain pipe; 695, support rod; 696, limiting sleeve; 697, rotating block; 698, placing plate. DETAILED DESCRIPTION
[0025] The present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments. The embodiments of the present invention are provided for purposes of illustration and description and are not intended to be exhaustive or to limit the invention to the disclosed forms. Many modifications and variations will be apparent to those skilled in the art. The embodiments are chosen and described to better illustrate the principles of the invention and its practical application, and to enable those skilled in the art to understand the invention and design various embodiments with various modifications suitable for specific applications.
[0026] The first embodiment, as Figures 1-3 As shown, the present invention provides a technical solution: an etching mechanism for manufacturing integrated optoelectronic devices, comprising a processing box 1, a cover plate 2 is provided at the opening of the processing box 1, a sealing ring 3 is fixedly connected to the side of the lower surface of the cover plate 2, the sealing ring 3 is squeezed and adapted to the inner wall of the processing box 1, and an exhaust mechanism 4 is passed through the upper surface of the cover plate 2. By providing the cover plate 2, the opening of the processing box 1 can be sealed, thereby preventing the leakage of toxic gases generated during the etching process of manufacturing integrated optoelectronic devices. By providing the sealing ring 3, the contact force between the cover plate 2 and the inner wall of the processing box 1 can be increased, so that the cover plate 2 is tightly connected to the upper surface of the processing box 1. By providing the exhaust mechanism 4, the exhaust gas generated in the inner cavity of the processing box 1 due to the etching of the integrated optoelectronic devices can be purified and discharged, thereby achieving the effect of protecting the operators;
[0027] A connecting frame 5 is fixedly connected to the inner wall of the processing box 1, and a lifting mechanism 6 is provided on the inner wall of the connecting frame 5. By providing the lifting mechanism 6, the integrated optoelectronic device to be etched can be placed, and after the integrated optoelectronic device is placed, it can be moved downward until it contacts the etching liquid, thereby achieving the effect of etching the integrated optoelectronic device. The lifting mechanism 6 includes a track frame 64, and a sliding column 66 is slidably connected to the inner cavity of the track frame 64. The bottom end of the sliding column 66 is fixedly connected to a sliding rod 67, which passes through the track frame 64. The bottom end of the sliding rod 67 is fixedly connected to an arc plate 68, and the lower surface of the arc plate 68 is fixedly connected to a placing mechanism 69. By providing the track frame 64, the sliding column 66 can be limited so that the sliding column 66 can drive the arc plate 68 to move up and down. By providing the placing mechanism 69, the integrated optoelectronic device to be etched can be placed, and the etching liquid can flow to the outer surface of the integrated optoelectronic device.
[0028] The exhaust mechanism 4 comprises a connecting pipe 41 penetrating through the cover plate 2, a partition rod 42 fixedly connected to the bottom end of the connecting pipe 41, a circular plate 43 fixedly connected to the bottom end of the partition rod 42, a plurality of partition rods 42 arranged to enable the gas generated by etching of the integrated optoelectronic device to flow into the inner cavity of the connecting pipe 41 through the gaps between the partition rods 42, an exhaust fan 44 fixedly connected to the inner wall of the connecting pipe 41, an exhaust pipe 45 fixedly connected to the top end of the connecting pipe 41, and a plurality of activated carbon blocks 46 fixedly connected to the inner wall of the connecting pipe 41 above the exhaust fan 44, wherein the number of the activated carbon blocks 46 is several, and the activated carbon blocks 46 are evenly distributed. The exhaust fan 44 is arranged to enable the gas generated by etching of the integrated optoelectronic device in the inner cavity of the processing box 1 to be exhausted from the processing box 1 and discharged through the exhaust pipe 45 after the power is connected and the switch is turned on. The activated carbon blocks 46 are arranged to contact the gas generated by etching of the integrated optoelectronic device and to adsorb the impurities in the exhaust gas during the contact. In use, the operator covers the opening of the processing box 1 with the cover plate 2. During the etching of the integrated optoelectronic device, the operator connects the power to the exhaust fan 44 and turns on the switch of the exhaust fan 44, so that the exhaust gas in the inner cavity of the processing box 1 is exhausted from the processing box 1 and discharged from the exhaust pipe 45.
[0029] The second embodiment, as Figures 4-7As shown, the lifting mechanism 6 further comprises a hydraulic machine 61 fixedly connected at the inner wall of the connecting frame 5, and the output end of the hydraulic machine 61 is provided with a moving rod 62. By arranging the hydraulic machine 61, the moving rod 62 can be moved under the control of the power supply, so that the top plate 65 can move up and down. The top end of the moving rod 62 is fixedly connected with a first fixed plate 63, and the outer surface of the first fixed plate 63 is fixedly connected with the top plate 65. The lower surface of the top plate 65 is fixedly connected with the top end of the sliding column 66. By arranging the top plate 65 and the sliding column 66, the up-and-down moving effect can be generated under the driving of the moving rod 62. The placing mechanism 69 comprises a support plate 691 fixedly connected to the lower surface of the arc-shaped plate 68. A plurality of holes are formed in the outer surface of the support plate 691. The bottom end of the support plate 691 is fixedly connected with a bottom plate 692. By arranging the support plate 691 and forming a plurality of holes in the outer surface of the support plate 691, the liquid required for etching of the integrated optoelectronic device can enter the upper surface of the bottom plate 692 through the holes. The water permeable plate 693 is symmetrically installed at the side of the upper surface of the bottom plate 692. The drain pipe 694 penetrates the shaft of the upper surface of the bottom plate 692. By arranging the water permeable plate 693 and the drain pipe 694, the liquid required for etching of the integrated optoelectronic device can flow to the integrated optoelectronic device on the upper surface of the bottom plate 692. The upper surface of the bottom plate 692 is fixedly connected with a support rod 695. The end of the support rod 695 is fixedly connected with a limiting sleeve 696. The inner cavity of the limiting sleeve 696 is rotatably connected with a rotating block 697. The end of the rotating block 697 away from the limiting sleeve 696 is fixedly connected with a placing plate 698. A plurality of water leakage holes are formed in the upper surface of the placing plate 698. By arranging the limiting sleeve 696, the rotating block 697 can be limited, and the rotating block 697 can drive the placing plate 698 to rotate, so that the integrated optoelectronic device can be well placed under the action of the two placing plates 698.
[0030] Working principle: when in use, the operator places the integrated optoelectronic device on the upper surface of the placing plate 698. The placing plate 698 and the rotating block 697 rotate in the inner cavity of the limiting sleeve 696, so that the integrated optoelectronic device remains balanced. Then the operator pours the required liquid into the inner cavity of the processing box 1. Then the moving rod 62 at the end of the hydraulic machine 61 is controlled to move downward, so that the integrated optoelectronic device is lowered and contacted with the liquid, and finally the etching effect of the integrated optoelectronic device is completed.
[0031] Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art and related fields without creative labor should belong to the protection scope of the present application. The structures, devices and operation methods not specifically described and explained in the present application are implemented according to the conventional means in the art, if not specifically described and limited.
Claims
1. An etching mechanism for manufacturing integrated optoelectronic devices, characterized in that: include: A processing box (1), wherein a cover plate (2) is provided at the opening of the processing box (1), a sealing ring (3) is fixedly connected to the side of the lower surface of the cover plate (2), the sealing ring (3) is squeezed and adapted to the inner wall of the processing box (1), and an exhaust mechanism (4) is penetrated through the upper surface of the cover plate (2); The exhaust mechanism (4) comprises a connecting pipe (41), the connecting pipe (41) passes through the cover plate (2), the bottom end of the connecting pipe (41) is fixedly connected to a partition rod (42), and the bottom end of the partition rod (42) is fixedly connected to a circular plate (43); An exhaust fan (44) is fixedly connected to the inner wall of the connecting pipe (41), an exhaust pipe (45) is fixedly connected to the top of the connecting pipe (41), and an activated carbon block (46) is fixedly connected to the inner wall of the connecting pipe (41) above the exhaust fan (44), wherein the number of the activated carbon blocks (46) is several, and the several activated carbon blocks (46) are evenly distributed; A connection frame (5) is fixedly connected to the inner wall of the processing box (1), and a lifting mechanism (6) is provided on the inner wall of the connection frame (5). The lifting mechanism (6) includes a track frame (64), and a sliding column (66) is slidably connected to the inner cavity of the track frame (64). The bottom end of the sliding column (66) is fixedly connected to a sliding rod (67), and the sliding rod (67) passes through the track frame (64). The bottom end of the sliding rod (67) is fixedly connected to an arc plate (68), and the lower surface of the arc plate (68) is fixedly connected to a placement mechanism (69); The lifting mechanism (6) further comprises a hydraulic press (61), wherein the hydraulic press (61) is fixedly connected to the inner wall of the connection frame (5), and a moving rod (62) is provided at the output end of the hydraulic press (61); The placement mechanism (69) includes a support plate (691), the support plate (691) is fixedly connected to the lower surface of the arc-shaped plate (68), a plurality of holes are provided on the outer surface of the support plate (691), and the bottom end of the support plate (691) is fixedly connected to the bottom plate (692); Water-permeable plates (693) are symmetrically installed on the sides of the upper surface of the bottom plate (692), and a drainage pipe (694) passes through the axis of the upper surface of the bottom plate (692); The upper surface of the bottom plate (692) is fixedly connected to a support rod (695), the end of the support rod (695) is fixedly connected to a limiting sleeve (696), the inner cavity of the limiting sleeve (696) is rotatably connected to a rotating block (697), and the end of the rotating block (697) away from the limiting sleeve (696) is fixedly connected to a placement plate (698), and the upper surface of the placement plate (698) is provided with a plurality of water leakage holes.
2. The etching mechanism for manufacturing integrated optoelectronic devices according to claim 1, characterized in that: The top end of the moving rod (62) is fixedly connected to a first fixing plate (63), the outer surface of the first fixing plate (63) is fixedly connected to a top plate (65), and the lower surface of the top plate (65) is fixedly connected to the top end of the sliding column (66).
Citation Information
Patent Citations
Plasma Etching Apparatus
US20110303365A1