A pre-embedded device heat dissipation substrate laminated mounting structure and a preparation method thereof

Abstract

The application discloses a pre-embedded device heat dissipation substrate laminated mounting structure and a preparation method thereof, and relates to the field of semiconductor packaging structures. The device heat dissipation substrate laminated mounting structure comprises a first substrate, an intermediate substrate and a second substrate which are arranged in layers; further comprises a heat dissipation cover and a pre-embedded inductor; the pre-embedded inductor is covered in the intermediate substrate; the heat dissipation cover is connected with the intermediate substrate and covers the outside of the second substrate; the first substrate is provided with a first connector, the intermediate substrate is provided with an intermediate connector, and the second substrate is provided with a second connector; the intermediate substrate connects the first connector and the second connector through the intermediate connector; and the intermediate substrate connects the pre-embedded inductor and the first connector through the intermediate connector. The pre-embedded inductor, the intermediate connector and the heat dissipation cover are integrated on the intermediate substrate, so that the device is highly integrated; the pre-embedded inductor is covered in the intermediate substrate, so that the packaging difficulty of the device is reduced; and the intermediate substrate can dissipate heat through the body and the heat dissipation cover, so that the energy consumption is reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor packaging structure, and particularly to a pre-embedded device heat dissipation substrate laminated mounting structure and a preparation method thereof. BACKGROUND

[0002] SMT-LGA (Ball Grid Array, grid array) packaging structure, referred to as LGA packaging structure, is a packaging structure of integrated circuits using organic substrates. Metal contacts are used instead of traditional needle-shaped pins to connect with the contacts on the mainboard, thereby realizing the electrical connection between the chip and the mainboard.

[0003] In the prior art, when an inductor is packaged using an SMT-LGA packaging structure, a copper connector needs to be customized. Specifically, the copper connector and the inductor are clamped between two substrates, and the overall device after packaging is supported in the middle of the two substrates through the inductor and the copper connector, and the two substrates are interconnected through the copper connector. The packaging structure requires that the error between the welding thickness of the copper connector and the welding thickness of the inductor cannot exceed ±200um, otherwise the size thickness of the overall device will be out of tolerance; since the interconnection between the two substrates is only realized through the copper connector, the copper connector cannot be damaged, and if the copper connector is damaged during subsequent use, the overall device will be scrapped; the heat generated by the inductor is in the middle of the two layers of substrates, which will result in poor heat conductivity of the overall device.

[0004] Therefore, we need a new semiconductor packaging structure to solve the problems of high heat dissipation energy consumption and high packaging difficulty existing in the prior art. SUMMARY

[0005] The present application provides a pre-embedded device heat dissipation substrate laminated mounting structure and a preparation method thereof, which solves the problems of high heat dissipation energy consumption and high packaging difficulty existing in the prior art semiconductor packaging technology.

[0006] To achieve the above purpose, the present application adopts the following technical scheme:

[0007] In a first aspect, the present application provides a pre-embedded device heat dissipation substrate laminated mounting structure, comprising a first substrate, an intermediate substrate and a second substrate arranged in layers; further comprising a heat dissipation cover and a pre-embedded inductor;

[0008] The pre-embedded inductor is wrapped inside the intermediate substrate;

[0009] The heat dissipation cover is connected with the intermediate substrate and covers the outside of the second substrate;

[0010] The first substrate is provided with a first connector, the intermediate substrate is provided with an intermediate connector, and the second substrate is provided with a second connector;

[0011] The intermediate substrate realizes the connection of the first connector and the second connector through the intermediate connector; and the intermediate substrate also realizes the connection of the pre-embedded inductor and the first connector through the intermediate connector.

[0012] In a possible implementation, the second substrate is provided with an IC chip and circuit components connected with the second connector away from one side of the intermediate substrate.

[0013] The IC chip is connected with the heat dissipation cover away from one side of the second substrate.

[0014] In a possible implementation, an inductor mounting hole is formed on the intermediate substrate, the pre-embedded inductor is arranged in the inductor mounting hole, and an ABF glue layer is filled between the outside of the pre-embedded inductor and the inductor mounting hole.

[0015] In a possible implementation, a solder paste layer is arranged between the first connector and the intermediate connector, and between the intermediate connector and the second connector.

[0016] In a possible implementation, a thermosetting glue layer is arranged between the first substrate and the intermediate substrate, and between the intermediate substrate and the second substrate, and the thermosetting glue layer is distributed in the same layer as the solder paste layer.

[0017] In a possible implementation, a heat dissipation glue layer is arranged between the IC chip and the heat dissipation cover.

[0018] In a possible implementation, the heat dissipation glue layer is a non-conductive glue layer with a thermal conductivity greater than 3 W / (m·K).

[0019] In a possible implementation, an adhesive layer is arranged between the heat dissipation cover and the intermediate substrate.

[0020] In a second aspect, the present application provides a preparation method of the pre-embedded device heat dissipation substrate laminated mounting structure, the method comprising:

[0021] An inductor mounting hole is formed on the intermediate substrate, the pre-embedded inductor is arranged in the middle of the inductor mounting hole, an ABF glue is filled between the outside of the pre-embedded inductor and the inductor mounting hole, and the intermediate connector in the intermediate substrate is subjected to sputtering, wiring, lamination, exposure, development exposure, sputtering, etching and film plating treatment to obtain the intermediate substrate coated with the pre-embedded inductor.

[0022] The intermediate substrate with the embedded inductor is bonded between the first substrate and the second substrate; the intermediate connector of the intermediate substrate and the first connector of the first substrate, and the intermediate connector of the intermediate substrate and the second connector of the second substrate are connected through solder paste; the intermediate substrate and the first substrate, and the intermediate substrate and the second substrate are connected through heat-resistant glue.

[0023] The heat dissipation cover is arranged outside the second substrate, and the opening end of the heat dissipation cover is bonded to the side of the intermediate substrate away from the first substrate.

[0024] In a possible implementation, before the intermediate substrate with the embedded inductor is bonded between the first substrate and the second substrate, the method further includes:

[0025] An IC chip and circuit components are attached to one side of the second substrate; the IC chip and the circuit components are connected to the second connector of the second substrate, the intermediate substrate is located on the side of the second substrate without the IC chip and the circuit components, and the side of the IC chip away from the second substrate is bonded to the heat dissipation cover through heat dissipation glue.

[0026] The pre-embedded device heat dissipation substrate laminated structure provided by the embodiment of the application integrates the embedded inductor, the intermediate connector and the heat dissipation cover in one substrate by using the intermediate substrate, so that the first substrate and the second substrate can be conductive to each other, and the high integration of the semiconductor device is realized. The embedded inductor is covered in the intermediate substrate, and the conductive connection between the first substrate and the second substrate is realized through the intermediate connector embedded in the intermediate substrate; that is, the embedded inductor is embedded in the thickness of the intermediate substrate, and the intermediate connector embedded in the intermediate substrate is used to replace the copper connector in the traditional SMT-LGA packaging structure, which not only solves the problem that the copper connector is easily damaged when directly exposed to air, but also solves the problem that the packaging precision of the existing SMT-LGA packaging structure is high, and the packaging difficulty of the semiconductor device is reduced. The semiconductor device is also used to dissipate heat generated during operation to the metal surface through the intermediate substrate and the heat dissipation cover, so as to increase the heat dissipation capacity of the packaged device and reduce the energy consumption. BRIEF DESCRIPTION OF DRAWINGS

[0027] Figure 1 A structure diagram of an existing SMT-LGA packaging structure for packaging an inductor;

[0028] Figure 2 A structure diagram of a pre-embedded device heat dissipation substrate laminated structure provided by the embodiment of the application;

[0029] Figure 3A preparation method of a pre-embedded device heat dissipation substrate laminated mounting structure provided by the embodiment of the present application has the step flow chart shown in the figure;

[0030] Figure 4 A structure schematic diagram of the preparation method of the pre-embedded device heat dissipation substrate laminated mounting structure provided by the embodiment of the present application, in which an inductance mounting hole is formed on the intermediate substrate;

[0031] Figure 5 A structure schematic diagram of the preparation method of the pre-embedded device heat dissipation substrate laminated mounting structure provided by the embodiment of the present application, in which a first adhesive film is pasted on the back of the intermediate substrate, and a pre-embedded inductance is arranged in the inductance mounting hole;

[0032] Figure 6 A structure schematic diagram of the preparation method of the pre-embedded device heat dissipation substrate laminated mounting structure provided by the embodiment of the present application, in which ABF glue is filled in the inductance mounting hole of the intermediate substrate;

[0033] Figure 7 A structure schematic diagram of the preparation method of the pre-embedded device heat dissipation substrate laminated mounting structure provided by the embodiment of the present application, in which after the intermediate substrate is subjected to sputtering, wiring, lamination, exposure, developing exposure, sputtering, etching and film plating treatment, the intermediate substrate coated with the pre-embedded inductance is obtained;

[0034] Figure 8 A structure schematic diagram of the preparation method of the pre-embedded device heat dissipation substrate laminated mounting structure provided by the embodiment of the present application, in which a second adhesive film is pasted on the front of the intermediate substrate at the pin welding position;

[0035] Figure 9 A structure schematic diagram of the preparation method of the pre-embedded device heat dissipation substrate laminated mounting structure provided by the embodiment of the present application, in which after the sputtering treatment, the intermediate substrate after the second adhesive film is removed;

[0036] Figure 10 A structure schematic diagram of the preparation method of the pre-embedded device heat dissipation substrate laminated mounting structure provided by the embodiment of the present application, in which after the IC chip and the circuit component are mounted, the structure of the second substrate is shown in the figure;

[0037] Figure 11 A structure schematic diagram of the preparation method of the pre-embedded device heat dissipation substrate laminated mounting structure provided by the embodiment of the present application, in which the second substrate is mounted on the intermediate substrate;

[0038] Figure 12 A structure schematic diagram of the preparation method of the pre-embedded device heat dissipation substrate laminated mounting structure provided by the embodiment of the present application, in which the heat dissipation cover is mounted on the intermediate substrate;

[0039] Figure 13A structure diagram of an overall device prepared by a preparation method of a pre-embedded device heat dissipation substrate laminated mounting structure provided by an embodiment of the present application.

[0040] Signs and descriptions:

[0041] 11, substrate; 12, copper connector; 13, inductor;

[0042] 21, first substrate; 22, intermediate substrate; 23, second substrate; 24, heat dissipation cover; 25, pre-embedded inductor; 26, first connector; 27, intermediate connector; 28, second connector; 29, IC chip; 210, circuit component; 211, inductor mounting hole; 212, ABF adhesive layer; 213, solder paste layer; 214, thermosetting adhesive layer; 215, heat dissipation adhesive layer; 216, adhesive layer; 217, first adhesive film; 218, second adhesive film; 219, sputtering layer. DETAILED DESCRIPTION

[0043] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0044] Hereinafter, the terms "first" and "second" are only used for description purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first" and "second" can explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, the meaning of "multiple" is two or more. In addition, the use of "based on" or "according to" means openness and inclusiveness, because the process, step, calculation or other action "based on" or "according to" one or more stated conditions or values can be based on additional conditions or values beyond the stated values in practice.

[0045] As shown in Figure 1 The conventional SMT-LGA packaging structure includes a substrate 11, a copper connector 12 and an inductor 13. The substrate 11 is two, respectively arranged on both sides of the inductor 13, and the copper connector 12 is arranged between the two substrates 11 and is arranged side by side on the left side of the inductor 13, respectively connected with the circuit in the two substrates 11, for conducting the two substrates 11.

[0046] The packaging structure requires that the error between the soldering thickness of the copper connector 12 and the soldering thickness of the inductor 11 cannot exceed ±200um, otherwise it will cause the size thickness of the overall device to exceed the standard.

[0047] Since the interconnection between the two substrates 11 is only realized by the copper connector 12, the copper connector 12 cannot be damaged, and if the copper connector 12 is damaged in the subsequent use process, the whole device will be scrapped.

[0048] The heat generated by the inductor 13 is between the two layers of substrates 11, which will cause poor thermal conductivity of the whole device.

[0049] In order to solve the problems of high heat dissipation energy consumption and high packaging difficulty existing in the prior art semiconductor packaging technology, an embodiment of the present application provides a pre-embedded device heat dissipation substrate laminated mounting structure and a preparation method thereof.

[0050] As shown in Figure 2 The first aspect, the embodiment of the present application provides a pre-embedded device heat dissipation substrate laminated mounting structure, which comprises a first substrate 21, an intermediate substrate 22 and a second substrate 23 arranged in layers, and further comprises a heat dissipation cover 24 and a pre-embedded inductor 25.

[0051] The pre-embedded inductor 25 is wrapped inside the intermediate substrate 22.

[0052] The thickness of the pre-embedded inductor 25 cannot exceed the thickness of the intermediate substrate 22, so as to utilize the space advantage of the thickness of the intermediate substrate 22 to wrap the pre-embedded inductor 25 inside the intermediate substrate, thereby reducing the scrap caused by the difference in welding thickness during the packaging of the copper connector and the inductor.

[0053] In the embodiment, in order to ensure that the intermediate substrate 22 can wrap the pre-embedded inductor 25, the thickness tolerance of the pre-embedded inductor 25 needs to be kept below 50um, otherwise the thickness of the intermediate substrate 22 is not enough to bury the pre-embedded inductor 25, which will cause the intermediate substrate 22 to be scrapped. Therefore, the pre-embedded inductor 25 needs to be screened in advance.

[0054] The heat dissipation cover 24 is connected with the intermediate substrate 22 and covers the outside of the second substrate 23.

[0055] The heat dissipation cover 24 is made of metal material and is connected with the intermediate substrate 22, which can transfer the heat in the intermediate substrate 22 to the heat dissipation cover 24, thereby improving the heat dissipation capacity of the packaged device.

[0056] The first substrate 21 is provided with a first connector 26, the intermediate substrate 22 is provided with an intermediate connector 27, and the second substrate 23 is provided with a second connector 28.

[0057] The intermediate substrate 22 realizes the connection of the first connector 26 and the second connector 28 through the intermediate connector 27.

[0058] The intermediate substrate 22 also realizes the connection of the pre-embedded inductor 25 and the first connector 26 through the intermediate connector 27.

[0059] The first connector 26 is a connection wire arranged in the first substrate 21, the second connector 28 is a connection wire arranged in the second substrate 23, and the intermediate connector 27 is a connection wire arranged in the intermediate substrate 22.

[0060] The pre-embedded device heat dissipation substrate laminated mounting structure provided by the embodiment of the application integrates the pre-embedded inductor 25, the intermediate connector 27 and the heat dissipation cover 24 in one substrate by using the intermediate substrate 22, so that the first substrate 21 and the second substrate 23 can be conductive to each other, and the high integration of the semiconductor device is realized. The pre-embedded inductor 25 is covered in the intermediate substrate 22, and the intermediate connector 27 embedded in the intermediate substrate 22 is used to realize the conduction of the first substrate 21 and the second substrate 23.

[0061] That is, the pre-embedded inductor 25 is embedded in the thickness of the intermediate substrate 22, and the intermediate connector 27 embedded in the intermediate substrate 22 is used to replace the copper connector in the traditional SMT-LGA packaging structure, which not only solves the problem that the copper connector is easily damaged when directly exposed to the air, but also solves the problem that the packaging precision of the existing SMT-LGA packaging structure is high, and the packaging difficulty of the semiconductor device is reduced.

[0062] The application also uses the good thermal conductivity of metal to dissipate the heat generated during the operation of the semiconductor device to the metal surface through the intermediate substrate 22 and the heat dissipation cover 24, thereby increasing the heat dissipation capacity of the packaged device and reducing the energy consumption.

[0063] Further, the second substrate 23 is provided with an IC chip 29 and a circuit component 210 connected with the second connector 28 away from the intermediate substrate 22;

[0064] The IC chip 29 is connected with the heat dissipation cover 24 away from the second substrate 23.

[0065] Specifically, the application uses the good thermal conductivity of metal to dissipate the heat generated during the operation of the pre-embedded inductor 25 and the IC chip 29 to the surface of the heat dissipation cover 24, thereby increasing the heat dissipation area of the packaged device and reducing the energy consumption.

[0066] Further, the intermediate substrate 22 is provided with an inductor mounting hole 211, and the pre-embedded inductor 25 is arranged in the inductor mounting hole 211, and an ABF glue layer 212 is filled between the outside of the pre-embedded inductor 25 and the inductor mounting hole 211.

[0067] Specifically, the inductor mounting hole 211 is arranged to facilitate the arrangement of the pre-embedded inductor 25 in the intermediate substrate 22, and the ABF glue layer 212 is used to wrap the pre-embedded inductor 25 and fill the inductor mounting hole 211, so as to prevent the chip circuit layer from having a cavity and causing the oxidation bridge connection of the circuit to be scrapped.

[0068] Further, the first connector 26 and the intermediate connector 27, and the intermediate connector 27 and the second connector 28 are provided with a solder paste layer 213.

[0069] Specifically, the first connector 26 and the intermediate connector 27, and the intermediate connector 27 and the second connector 28 are connected and conducted through the solder paste layer 213.

[0070] Further, the first substrate 21 and the intermediate substrate 22, and the intermediate substrate 22 and the second substrate 23 are provided with a thermosetting adhesive layer 214, which is distributed between the solder paste layer 213 and the thermosetting adhesive layer 214.

[0071] Specifically, the first substrate 21 and the intermediate substrate 22, and the intermediate substrate 22 and the second substrate 23 are attached through the thermosetting adhesive layer 214. The solder paste layer 213 and the thermosetting adhesive layer 214 can be cured at one time, without the need for separate baking, thereby simplifying the packaging process.

[0072] Further, the IC chip 29 and the heat dissipation cover 24 are provided with a heat dissipation adhesive layer 215.

[0073] The IC chip 29 and the heat dissipation cover 24 are connected through the heat dissipation adhesive layer 215, which can improve the heat dissipation effect of the IC chip 29.

[0074] Further, the heat dissipation adhesive layer 215 is a non-conductive adhesive layer with a thermal conductivity greater than 3 W / (m·K).

[0075] The non-conductive adhesive layer does not have the risk of short circuit even if it flows to other devices, thereby improving the safety performance of the packaged device.

[0076] Further, the heat dissipation cover 24 and the intermediate substrate 22 are provided with an adhesive layer 216.

[0077] Specifically, the heat dissipation cover 24 forms the adhesive layer 216 through viscous glue, and is thus attached to the intermediate substrate 22.

[0078] As shown in FIG. 1, Figure 3 In a second aspect, the embodiment of the present application also provides a preparation method of the pre-embedded device heat dissipation substrate laminated mounting structure based on any one of the above, which comprises the following steps:

[0079] Step 101: An inductor mounting hole 211 is formed on the intermediate substrate 22, the pre-embedded inductor 25 is placed in the middle of the inductor mounting hole 211, ABF glue is filled between the outside of the pre-embedded inductor 25 and the inductor mounting hole 211, and the intermediate connector 27 in the intermediate substrate 22 is subjected to sputtering, wiring, lamination, exposure, development exposure, sputtering, etching and film plating treatment, thereby obtaining the intermediate substrate 22 coated with the pre-embedded inductor 25.

[0080] Step 102, bonding the intermediate substrate 22 with the pre-embedded inductor 25 between the first substrate 21 and the second substrate 23.

[0081] The intermediate connector 27 of the intermediate substrate 22 and the first connector 26 of the first substrate 21, and the intermediate connector 27 of the intermediate substrate 22 and the second connector 28 of the second substrate 23 are connected by solder paste.

[0082] The intermediate substrate 22 and the first substrate 21, and the intermediate substrate 22 and the second substrate 23 are connected by heat curing glue.

[0083] Step 103, covering the heat dissipation cover 24 outside the second substrate 23, and bonding the opening end of the heat dissipation cover 24 on the side of the intermediate substrate 22 away from the first substrate 21.

[0084] Further, before bonding the intermediate substrate 22 with the pre-embedded inductor 25 between the first substrate 21 and the second substrate 23, the method further comprises:

[0085] IC chips 29 and circuit components 210 are attached on one side of the second substrate 23.

[0086] The IC chip 29 and the circuit component 210 are connected with the second connector 28 of the second substrate 23, and the intermediate substrate 22 is located on the side of the second substrate 23 without the IC chip 29 and the circuit component 210, and the side of the IC chip 29 away from the second substrate 23 is bonded with the heat dissipation cover 24 cover by heat dissipation glue.

[0087] Specifically, in step 101, first, as shown in Figure 4 The connection wire is arranged in the intermediate substrate 22, and the inductor mounting hole 211 is formed in the reserved area of the intermediate substrate 22.

[0088] Secondly, as shown in Figure 5 The first adhesive film 217 is attached to the back of the intermediate substrate 22, and the pre-embedded inductor 25 is placed in the middle of the inductor mounting hole 211.

[0089] Thirdly, as shown in Figure 6 ABF glue is poured into the inductor mounting hole 211 to form an ABF glue layer 212, so that there is no cavity in the intermediate substrate 22, avoiding oxidation bridge connection of the line and scrapping; the first adhesive film 217 is removed, and the ABF glue layer 212 on the back of the intermediate substrate 22 is thinned, so that the ABF glue layer 212 on the back of the intermediate substrate 22 is flush with the back of the intermediate substrate 22.

[0090] Further, before removing the first adhesive film 217, the first adhesive film 217 needs to be non-sticky to prevent the adhesive with stickiness from being stuck on the intermediate substrate 22, causing the substrate to be scrapped.

[0091] Afterwards, the intermediate substrate 22 is subjected to a sputtering Cu / Ti process, and the connection wires in the intermediate substrate 22 are subjected to a sputtering, wiring, laminating, exposure, developing exposure, sputtering, etching, and plating process to obtain the intermediate substrate 22 with the embedded inductor 25 as shown in Figure 7 .

[0092] The intermediate substrate 22 is relatively fragile and cannot be folded in the subsequent packaging process. There should be no serious pad damage on the substrate, otherwise the substrate chip will be damaged or the circuit will be damaged.

[0093] In order to protect the intermediate substrate 22 and prolong the service life of the intermediate substrate 22, a green oil layer with a thickness of 15-20 um can be coated on the surface of the intermediate substrate 22. The green oil, also known as liquid photoresist, is an acrylic oligomer, which is usually coated on a printed circuit board (PCB) as a protective layer covering the circuit and substrate that does not need to be welded, or used as a solder resist.

[0094] Afterwards, as shown in Figure 8 , a second adhesive film 218 is attached to the surface of the intermediate substrate 22 where the pins are welded.

[0095] Specifically, the surface of the intermediate substrate 22 where the pins are welded is the end of the intermediate connector that leaks out of the intermediate substrate.

[0096] The second adhesive film 218 is used to protect the attached film area of the intermediate substrate 22 from being contaminated in the subsequent sputtering process, so as to ensure that the subsequent devices can be normally attached.

[0097] Finally, the surface of the intermediate substrate 22 is subjected to a sputtering process to form a sputtering layer 219, and then the second adhesive film 218 on the surface of the intermediate substrate 22 is removed to obtain the intermediate substrate 22 with the embedded inductor 25 as shown in Figure 9 .

[0098] Further, in the step of attaching IC chips 29 and circuit components 210 on one side of the second substrate 23, a plurality of IC chips 29 and circuit components 210 are attached on the front surface of the second substrate 23, and then the entire second substrate 23 after attachment is cut to obtain the second substrate 23 monomer as shown in Figure 10 .

[0099] Further, in step 102, as shown in Figure 11 , solder paste is brushed on the area of the intermediate substrate 22 where the intermediate connector 27 leaks out to form a solder paste layer 213; and thermosetting glue is brushed on the area of the intermediate substrate 22 where the intermediate connector 27 does not leak out to form a thermosetting glue layer 214; and the second substrate 23 monomer is attached to the front surface of the intermediate substrate 22.

[0100] The soldering paste and the heat-curing glue are solidified at one time, and multiple baking is not needed.

[0101] Further, in step 103, as shown in the figure, the heat-dissipating glue is coated on the surface of the IC chip 29 to form a heat-dissipating glue layer 215; the adhesive glue is coated on the edge area of the front surface of the intermediate substrate 22 to form an adhesive layer, so that the opening of the heat-dissipating cover 24 is connected with the intermediate substrate 22, and the bottom plate of the heat-dissipating cover 24 is connected with the surface of the IC chip 29. Figure 12

[0102] Further, in step 102, as shown in the figure, the soldering paste and the heat-curing glue are coated on the front surface of the first substrate 21, and the intermediate substrate 22, the second substrate 23 and the heat-dissipating cover 24 are integrally adhered on the first substrate 21. Figure 13

[0103] The first substrate 21 is mainly used for matching the product line with the connection port of the application end PCB, that is, the function of rewiring.

[0104] The connection body of the first substrate 21 and the intermediate substrate 22 is cut according to the position of the second substrate 23 monomer, and the packaging device monomer is obtained.

[0105] The longitudinal three-dimensional arrangement mode is adopted, the inductance is embedded in the thickness of the intermediate substrate, and the wire embedded in the intermediate substrate is used to replace the copper connector in the traditional packaging structure, so that the semiconductor device packaging process is reduced, a series of problems caused by the direct exposure of the copper connector in the air are solved, the scrap caused by the thickness difference of the copper connector and the inductance welding is reduced, the heat generated in the operation process of the embedded inductance and the IC chip is dissipated to the metal surface by using the good heat conductivity of the metal, the heat dissipation capacity of the packaging device is increased, and the energy consumption of the packaging device is reduced.

[0106] The above merely illustrates the specific implementation of the present application, but the protection scope of the present application is not limited to this, any change or replacement within the technical range disclosed by the present application should be covered in the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.​​

Claims

1. A pre-embedded device heat dissipation substrate laminate mounting structure, characterized by, It comprises a first substrate (21), an intermediate substrate (22) and a second substrate (23) arranged in a stack; further comprises a heat dissipation cover (24) and a pre-embedded inductor (25); The pre-embedded inductor (25) is covered inside the intermediate substrate (22); The heat dissipation cover (24) is connected with the intermediate substrate (22) and covers the outside of the second substrate (23); The first substrate (21) is provided with a first connector (26), the intermediate substrate (22) is provided with an intermediate connector (27), and the second substrate (23) is provided with a second connector (28); The intermediate substrate (22) realizes the connection of the first connector (26) and the second connector (28) through the intermediate connector (27); the intermediate substrate (22) also realizes the connection of the pre-embedded inductor (25) and the first connector (26) through the intermediate connector (27); Between the first connector (26) and the intermediate connector (27), and between the intermediate connector (27) and the second connector (28), a solder paste layer (213) is arranged; Between the first substrate (21) and the intermediate substrate (22), and between the intermediate substrate (22) and the second substrate (23), a thermosetting adhesive layer (214) is arranged, and the thermosetting adhesive layer (214) is distributed between the solder paste layer (213) and the solder paste layer (213) in the same layer. The solder paste layer (213) and the thermosetting adhesive layer (214) are solidified at one time and do not need to be baked separately.

2. The pre-buried device heat spreading substrate laminate package structure of claim 1, wherein, The second substrate (23) is provided with an IC chip (29) and a circuit component (210) connected with the second connector (28) on the side away from the intermediate substrate (22); The IC chip (29) is connected with the heat dissipation cover (24) on the side away from the second substrate (23).

3. The pre-buried device heat spreading substrate laminate package structure of claim 1, wherein, An inductor mounting hole (211) is formed in the intermediate substrate (22), the pre-embedded inductor (25) is arranged in the inductor mounting hole (211), and an ABF adhesive layer (212) is filled between the outside of the pre-embedded inductor (25) and the inductor mounting hole (211).

4. The pre-buried device heat spreading substrate laminate package structure of claim 2, wherein, A heat dissipation adhesive layer (215) is arranged between the IC chip (29) and the heat dissipation cover (24).

5. The pre-buried device heat spreading substrate laminate package structure of claim 4, wherein, The heat dissipation adhesive layer (215) is a non-conductive adhesive layer with a thermal conductivity greater than 3 W / (m·K).

6. The pre-buried device heat spreading substrate laminate package structure of claim 2, wherein, An adhesive layer (216) is arranged between the heat dissipation cover (24) and the intermediate substrate (22).

7. A method for manufacturing a pre-embedded device heat dissipation substrate laminate mounting structure according to claim 1, characterized by, It comprises: An inductor mounting hole (211) is formed in the intermediate substrate (22), the pre-embedded inductor (25) is placed in the middle of the inductor mounting hole (211), ABF glue is filled between the outside of the pre-embedded inductor (25) and the inductor mounting hole (211), and the intermediate connector (27) in the intermediate substrate (22) is subjected to sputtering, wiring, lamination, exposure, development exposure, sputtering, etching and film plating treatment to obtain the intermediate substrate (22) covered with the pre-embedded inductor (25); The intermediate substrate (22) coated with the pre-embedded inductor (25) is bonded between the first substrate (21) and the second substrate (23); the intermediate connector (27) of the intermediate substrate (22) and the first connector (26) of the first substrate (21), and the intermediate connector (27) of the intermediate substrate (22) and the second connector (28) of the second substrate (23) are connected by solder paste; the intermediate substrate (22) and the first substrate (21), and the intermediate substrate (22) and the second substrate (23) are connected by heat-resistant glue; The heat dissipation cover (24) is covered outside the second substrate (23), and the opening end of the heat dissipation cover (24) is bonded to the side of the intermediate substrate (22) away from the first substrate (21).

8. The method of claim 7, wherein the method further comprises: Before the intermediate substrate (22) coated with the pre-embedded inductor (25) is bonded between the first substrate (21) and the second substrate (23), the method further comprises: IC chips (29) and circuit components (210) are attached to one side of the second substrate (23); the IC chips (29) and the circuit components (210) are connected to the second connector (28) of the second substrate (23), the intermediate substrate (22) is located on the side of the second substrate (23) which is not attached with the IC chips (29) and the circuit components (210), and the side of the IC chips (29) away from the second substrate (23) is bonded to the cover of the heat dissipation cover (24) by heat dissipation glue.

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