Plasma processing apparatus

Abstract

A plasma processing apparatus of the present invention includes at least one electrical power consuming component within a plasma processing chamber. At least one electrical power consuming component is electrically connected to the power receiving coil. The power receiving coil and the power transmitting coil are electromagnetically inductively coupled. The power transmission coil receives electric power from the power transmission unit. The control unit determines a required electric power level corresponding to a parameter value including an input impedance obtained from an input voltage and an input current input from the power transmission unit to the power transmission coil or a load resistance value of at least one electric power consumption component, and controls the power transmission unit to output an output electric power having the required electric power level.

Description

Technical Field

[0001] An exemplary embodiment of the present invention relates to a plasma processing apparatus. Background Art

[0002] A plasma processing device is used for plasma processing. The plasma processing device includes a chamber and a substrate support table (mounting table) arranged in the chamber. The substrate support table includes a base (lower electrode) and an electrostatic chuck for holding the substrate. A temperature adjustment element (such as a heater) for adjusting the temperature of the substrate is provided inside the electrostatic chuck. In addition, a filter is provided between the temperature adjustment element and the power supply for the temperature adjustment element, and the filter attenuates or blocks high-frequency noise entering the power supply line and / or signal line from the high-frequency electrode and / or other electrical components in the chamber. One of such plasma processing devices is described in the following patent document 1.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2015-173027 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] An exemplary embodiment of the present invention provides a technique for supplying electric power by electromagnetic induction coupling without using a power storage unit according to a load resistance value of an electric power consuming component in a plasma processing apparatus.

[0008] Technical solutions for solving technical problems

[0009] In an exemplary embodiment, a plasma processing device is provided. The device includes a plasma processing chamber, a substrate support, an electrode or an antenna, a high-frequency power supply, at least one electric power consumption component, a power receiving coil, a power transmission coil, a power transmission unit, and a control unit. The substrate support unit is arranged in the plasma processing chamber. The electrode or the antenna is arranged outside the plasma processing space in the plasma processing chamber. The space in the plasma processing chamber is located between the electrode or the antenna and the substrate support unit. The high-frequency power supply is configured to generate high-frequency electric power and is electrically connected to the substrate support unit, the electrode or the antenna. At least one electric power consumption component is configured in the plasma processing chamber or in the substrate support unit. The power receiving coil is electrically connected to at least one electric power consumption component. The power transmission coil is electromagnetically inductively coupled to the power receiving coil. The power transmission unit is electrically connected to the power transmission coil to supply electric power to the power transmission coil. The power transmission unit includes a voltage detector and a current detector, the voltage detector is configured to detect an input voltage input to the power transmission coil, and the current detector is configured to detect an input current input to the power transmission coil. The control unit is configured to determine a required electric power level corresponding to a parameter value, and to control the power transmission unit to output output electric power having the required electric power level, wherein the parameter value includes an input impedance obtained based on an input voltage and an input current, or a load resistance value of at least one electric power consuming component.

[0010] Effects of the Invention

[0011] According to an exemplary embodiment, there is provided a technique for supplying electric power by electromagnetic induction coupling without using a power storage unit according to a load resistance value of an electric power consuming component in a plasma processing apparatus. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a diagram for explaining a configuration example of a plasma processing system.

[0013] Figure 2 It is a diagram for explaining a configuration example of a capacitive coupling type plasma processing apparatus.

[0014] Figure 3 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to an exemplary embodiment.

[0015] Figure 4 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment.

[0016] Figure 5 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0017] Figure 6 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0018] Figure 7 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0019] Figure 8 It is a diagram showing a power transmission unit according to an exemplary embodiment.

[0020] Fig. 9 It is a diagram showing a power transmission coil unit and a power reception coil unit according to an exemplary embodiment.

[0021] Fig.10 It is a diagram showing a power transmission coil unit and a power reception coil unit according to an exemplary embodiment.

[0022] Fig.11 It is a diagram showing a power transmission coil unit and a power reception coil unit according to an exemplary embodiment.

[0023] Fig.12 : is a graph showing the impedance characteristics of the power receiving coil unit according to an exemplary embodiment.

[0024] Fig.13 is a diagram showing an RF filter according to an exemplary embodiment.

[0025] Fig.14 FIG. 1 is a diagram showing a rectifying and smoothing unit according to an exemplary embodiment.

[0026] Fig.15 is a diagram showing an RF filter according to an exemplary embodiment.

[0027] Fig.16 It is a diagram showing a communication unit of a power transmission unit and a communication unit of a rectification and smoothing unit according to an exemplary embodiment.

[0028] Fig.17 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0029] Fig.18 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0030] Fig.19 It is a diagram showing a communication unit of a power transmission unit and a communication unit of a rectifying and smoothing unit according to another exemplary embodiment.

[0031] Fig. 20 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0032] Fig.21 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0033] Fig. 22 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0034] Fig.23 (a) and Fig.23 (b) are diagrams showing a power storage unit according to an exemplary embodiment.

[0035] Fig.24 is a diagram showing a voltage controlled converter according to an exemplary embodiment.

[0036] Fig.25 FIG. 1 is a diagram showing a constant voltage control unit according to an exemplary embodiment.

[0037] Fig.26 It is a diagram showing a constant voltage control unit according to another exemplary embodiment.

[0038] Fig. 27 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0039] Fig.28 FIG. 1 is a diagram showing an equivalent circuit of an example of a power transmission coil unit and a power reception coil unit.

[0040] Fig.29 is a diagram showing an example of at least one table.

[0041] Fig.30 is a diagram showing an example of at least one table.

[0042] Fig.31 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0043] Fig.32 This is a timing chart showing an example of load resistance value, input impedance, transmitted electric power, and switching element state.

[0044] Fig.33 FIG. 1 is a diagram showing a flow of a power supply method according to an exemplary embodiment.

[0045] Fig.34 FIG. 1 is a diagram showing a flow of a power supply method according to an exemplary embodiment.

[0046] Fig.35 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0047] Fig.36 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0048] Fig.37 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0049] Fig.38 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0050] Fig.39 It is a diagram showing a power transmission coil unit and a power reception coil unit in a plasma processing apparatus according to still another exemplary embodiment.

[0051] Fig.40 It is a diagram showing a power transmission coil unit and a power reception coil unit in a plasma processing apparatus according to still another exemplary embodiment.

[0052] Fig.41 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0053] Fig.42 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0054] Fig.43 FIG. 1 is a diagram showing an immittance converter in a plasma processing apparatus according to still another exemplary embodiment.

[0055] Fig.44 The diagrams are diagrams showing power transmission units that can be used in plasma processing apparatuses according to various exemplary embodiments.

[0056] Fig.45 The diagrams are for explaining the duty ratio adjustment of the transmission voltage of the power transmission unit that can be adopted in the plasma processing apparatus according to various exemplary embodiments.

[0057] Fig.46 The diagrams are diagrams showing power transmission units and AC / DC converters that can be used in plasma processing apparatuses according to various exemplary embodiments.

[0058] Fig.47 The diagrams are diagrams showing power receiving coil units that can be used in plasma processing apparatuses according to various exemplary embodiments.

[0059] Fig.48 The diagrams are diagrams showing the configurations of a power receiving coil and a power transmitting coil that can be employed in a plasma processing apparatus according to various exemplary embodiments.

[0060] Fig.49 The diagrams are diagrams showing the configurations of a power receiving coil and a power transmitting coil that can be employed in a plasma processing apparatus according to various exemplary embodiments.

[0061] Fig.50The diagrams are diagrams showing the configurations of a power receiving coil unit and a rectifying and smoothing unit that can be employed in a plasma processing apparatus according to various exemplary embodiments.

[0062] Fig.51 The diagrams are diagrams showing the configurations of a power receiving coil unit and a rectifying and smoothing unit that can be employed in a plasma processing apparatus according to various exemplary embodiments.

[0063] Fig.52 The diagrams are diagrams showing integrated structures related to power supply that can be adopted in plasma processing apparatuses according to various exemplary embodiments.

[0064] Fig.53 The diagrams are diagrams showing integrated structures related to power supply that can be adopted in plasma processing apparatuses according to various exemplary embodiments.

[0065] Fig.54 The diagrams are diagrams showing integrated structures related to power supply that can be adopted in plasma processing apparatuses according to various exemplary embodiments.

[0066] Fig.55 The diagrams are diagrams showing integrated structures related to power supply that can be adopted in plasma processing apparatuses according to various exemplary embodiments.

[0067] Fig.56 The diagrams are diagrams showing integrated structures related to power supply that can be adopted in plasma processing apparatuses according to various exemplary embodiments.

[0068] Fig.57 The diagrams are diagrams showing integrated structures related to power supply that can be adopted in plasma processing apparatuses according to various exemplary embodiments.

[0069] Fig.58 The diagrams are diagrams showing integrated structures related to power supply that can be adopted in plasma processing apparatuses according to various exemplary embodiments.

[0070] Fig.59 The diagrams are diagrams showing integrated structures related to power supply that can be adopted in plasma processing apparatuses according to various exemplary embodiments.

[0071] Fig.60 The diagrams are diagrams showing integrated structures related to power supply that can be adopted in plasma processing apparatuses according to various exemplary embodiments.

[0072] Fig.61 The diagrams are diagrams showing integrated structures related to power supply that can be adopted in plasma processing apparatuses according to various exemplary embodiments.

[0073] Fig.62 The diagrams are diagrams showing integrated structures related to power supply that can be adopted in plasma processing apparatuses according to various exemplary embodiments.

[0074] Fig.63 The diagrams are diagrams showing integrated structures related to power supply that can be adopted in plasma processing apparatuses according to various exemplary embodiments.

[0075] Fig.64 The diagrams are diagrams showing integrated structures related to power supply that can be adopted in plasma processing apparatuses according to various exemplary embodiments.

[0076] Fig.65 The diagrams are diagrams showing integrated structures related to power supply that can be adopted in plasma processing apparatuses according to various exemplary embodiments. DETAILED DESCRIPTION

[0077] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. In each of the drawings, the same or corresponding parts are denoted by the same reference numerals.

[0078] Figure 1 : is a diagram for illustrating a structural example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support portion 11, and a plasma generating portion 12. The plasma processing chamber 10 has a plasma processing space. In addition, the plasma processing chamber 10 includes: at least one gas supply port for supplying at least one processing gas to the plasma processing space; and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to the gas supply portion 20 described later, and the gas exhaust port is connected to the exhaust system 40 described later. The substrate support portion 11 is arranged in the plasma processing space and has a substrate supporting surface for supporting a substrate.

[0079] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied to the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP: Capacitively Coupled Plasma), an inductively coupled plasma (ICP: Inductively Coupled Plasma), an ECR plasma (Electron-Cyclotron-Resonance Plasma, an electron cyclotron resonance plasma), a helicon wave excited plasma (HWP: Helicon Wave Plasma), or a surface wave plasma (SWP: Surface Wave Plasma), etc. In addition, a plurality of types of plasma generating units including an AC (Alternating Current) plasma generating unit and a DC (Direct Current) plasma generating unit may be used. In one embodiment, the AC signal (AC electric power) used in the AC plasma generating unit has a frequency in the range of 100kHz to 10GHz. Therefore, the AC signal includes an RF (Radio Frequency, high frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100kHz to 150MHz.

[0080] The control unit 2 processes the computationally executable commands that enable the plasma processing device 1 to perform the various steps described in the present invention. The control unit 2 may be configured to control the various components of the plasma processing device 1 to perform the various steps described herein. In one embodiment, a portion or all of the control unit 2 may be included in the plasma processing device 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 reads a program from the storage unit 2a2 and performs various control operations by executing the read program. The program may be pre-stored in the storage unit 2a2 or acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2 and read and executed from the storage unit 2a2 by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0081] Hereinafter, as an example of the plasma processing apparatus 1 , a configuration example of a capacitive coupling type plasma processing apparatus will be described. Figure 2 It is a diagram for explaining a configuration example of a capacitive coupling type plasma processing apparatus.

[0082] A capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. In addition, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas inlet unit. The gas inlet unit is configured to be able to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet unit includes a shower head 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the top (Ceiling) of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the shell of the plasma processing chamber 10.

[0083] The substrate support portion 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 when viewed from above. The substrate W is arranged on the central region 111a of the main body 111, and the ring assembly 112 is arranged on the annular region 111b of the main body 111 in a manner of surrounding the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0084] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The conductive component of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is arranged on the base 1110. The electrostatic chuck 1111 includes a ceramic component 1111a and an electrostatic electrode (adsorption electrode, chuck electrode or clamping electrode) 1111b arranged in the ceramic component 1111a. The ceramic component 1111a has a central area 111a. In one embodiment, the ceramic component 1111a also has an annular area 111b. In addition, other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck and an annular insulating component, may also have an annular area 111b. In this case, the ring assembly 112 can be arranged on the annular electrostatic chuck or the annular insulating component, or on both the electrostatic chuck 1111 and the annular insulating component. In addition, at least one RF / DC electrode combined with the RF power supply 31 and / or DC power supply 32 described later can be configured in the ceramic component 1111a. In this case, at least one RF / DC electrode functions as a lower electrode. When the bias RF signal and / or DC signal described later is supplied to at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. In addition, the conductive component of the base 1110 and at least one RF / DC electrode can function as multiple lower electrodes. In addition, the electrostatic electrode 1111b can also function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0085] The ring assembly 112 includes one or more ring-shaped components. In one embodiment, the one or more ring-shaped components include one or more edge rings and at least one cover ring. The edge ring is made of conductive material or insulating material, and the cover ring is made of insulating material.

[0086] In addition, the substrate support portion 11 may include a temperature adjustment module, which is configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112 and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a or a combination thereof. A heat transfer fluid such as brine or gas can flow in the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are arranged in the ceramic part 1111a of the electrostatic chuck 1111. In addition, the substrate support portion 11 may include a heat transfer gas supply portion, which is configured to supply a heat transfer gas to the gap between the back side of the substrate W and the central area 111a.

[0087] The shower head 13 is configured to be able to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b and a plurality of gas introduction ports 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c through the gas diffusion chamber 13b. In addition, the shower head 13 includes at least one upper electrode. In addition, in addition to the shower head 13, the gas introduction unit may also include one or more side gas injection units (SGI: Side Gas Injector) installed in one or more openings formed in the side wall 10a.

[0088] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from the gas source 21 corresponding thereto to the shower head 13 via the flow controller 22 corresponding thereto. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. The gas supply unit 20 may include at least one flow modulation device for modulating or pulsing the flow of at least one process gas.

[0089] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF electric power) to at least one lower electrode and / or at least one upper electrode. Thus, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generating unit 12. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential can be generated on the substrate W, and the ion components in the formed plasma can be attracted to the substrate W.

[0090] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is configured to generate a generating source RF signal (generating source RF electric power) for plasma generation. In one embodiment, the generating source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a can be configured to generate a plurality of generating source RF signals having different frequencies. The generated one or more generating source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0091] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF electric power). The frequency of the bias RF signal may be the same as or different from the frequency of the generating source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the generating source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100kHz to 60MHz. In one embodiment, the second RF generating unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In addition, in various embodiments, at least one of the generating source RF signal and the bias RF signal may be pulsed.

[0092] In addition, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is connected to at least one lower electrode and is configured to generate a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generating unit 32b is connected to at least one upper electrode and is configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0093] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulse may have a pulse waveform of a rectangle, a trapezoid, a triangle, or a combination thereof. In one embodiment, a waveform generating unit for generating a sequence of voltage pulses from a DC signal is connected between the first DC generating unit 32a and at least one lower electrode. Therefore, the first DC generating unit 32a and the waveform generating unit constitute a voltage pulse generating unit. In the case where the second DC generating unit 32b and the waveform generating unit constitute a voltage pulse generating unit, the voltage pulse generating unit is connected to at least one upper electrode. The voltage pulse may have a positive polarity or a negative polarity. In addition, the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one cycle. In addition, the first and second DC generating units 32a, 32b may be provided in addition to the RF power supply 31, and the first DC generating unit 32a may be provided in place of the second RF generating unit 31b.

[0094] The exhaust system 40 may be connected to a gas outlet 10e, for example, provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s may be regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0095] In addition, in the capacitive coupling type plasma processing apparatus 1, the upper electrode is arranged so that the plasma processing space is located between the upper electrode and the substrate support portion 11. A high-frequency power source such as the first RF generating portion 31a is electrically connected to the upper electrode or the lower electrode in the substrate support portion 11. In the case where the plasma processing apparatus 1 is an inductive coupling type plasma processing apparatus, the antenna is arranged so that the plasma processing space is located between the antenna and the substrate support portion 11. A high-frequency power source such as the first RF generating portion 31a is electrically connected to the antenna. In the case where the plasma processing apparatus 1 is a plasma processing apparatus that generates plasma by surface waves such as microwaves, the antenna is arranged so that the plasma processing space is located between the antenna and the substrate support portion 11. A high-frequency power source such as the first RF generating portion 31a is electrically connected to the antenna via a waveguide.

[0096] Various exemplary embodiments of plasma processing apparatuses are described below. Each of the plasma processing apparatuses described below is configured to supply power to at least one power consuming component in the chamber 10 by wireless power supply (electromagnetic induction coupling), and may have the same structure as the plasma processing apparatus 1 .

[0097] Figure 3 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to an exemplary embodiment. Figure 3 The plasma processing apparatus 100A shown in FIG. 1 includes at least one high frequency power source 300, a power receiving coil unit 140, a power storage unit 160, and at least one power consumption component 240 (see FIG. 1 ). Fig.25 and Fig.26 The plasma processing apparatus 100A may further include a power transmission unit 120 , a power transmission coil unit 130 , a rectifying and smoothing unit 150 , a constant voltage control unit 180 (an example of a voltage control unit), a ground frame 110 , and a matching unit 301 .

[0098] At least one high frequency power source 300 includes a first RF generating section 31a and / or a second RF generating section 31b. At least one high frequency power source 300 is electrically connected to the substrate supporting section 11 via a matching section 301. The matching section 301 includes at least one impedance matching circuit.

[0099] The ground frame 110 includes the chamber 10 and is electrically grounded. The ground frame 110 electrically isolates the space 110h (RF-Hot space) inside it from the external space 110a (atmospheric space). The ground frame 110 surrounds the substrate support 11 arranged in the space 110h. In the plasma processing device 100A, the rectifying and smoothing unit 150, the power storage unit 160 and the constant voltage control unit 180 are arranged in the space 110h. In addition, in the plasma processing device 100A, the power transmission unit 120, the power transmission coil unit 130 and the power receiving coil unit 140 are arranged in the space 110a. In addition, the space 110h includes a decompression space (vacuum space) and a non-decompression space (non-vacuum space). The decompression space is the space inside the chamber 10, and the non-decompression space is the space outside the chamber 10. The substrate support 11 and the substrate W are arranged in the decompression space. The rectifying and smoothing unit 150, the power storage unit 160 and the constant voltage control unit 180 are arranged in the non-decompression space.

[0100] The devices arranged in the space 110a, namely the power transmission unit 120, the power transmission coil unit 130 and the power receiving coil unit 140, are covered by a metal shell formed of a metal such as aluminum, and the metal shell is grounded. As a result, the leakage of high-frequency noise caused by high-frequency electric power such as the first RF signal (generating source RF signal) and / or the second RF signal (bias RF signal) can be suppressed. There is an insulation distance between the metal shell and each power supply line. In addition, in the following description, the high-frequency electric power such as the first RF signal and / or the second RF signal propagating to the power transmission unit 120 is sometimes referred to as high-frequency noise, common mode noise or conductive noise.

[0101] The power transmission unit 120 is electrically connected between the AC power source 400 (e.g., a commercial AC power source) and the power transmission coil unit 130. The power transmission unit 120 receives the frequency of the AC power from the AC power source 400, and converts the frequency of the AC power into a transmission frequency to generate AC power having a transmission frequency, that is, transmits AC power.

[0102] The power transmission coil unit 130 includes a power transmission coil 131 (see Fig. 9 The power transmission coil 131 is electrically connected to the power transmission unit 120 . The power transmission coil 131 receives the transmission AC power from the power transmission unit 120 , and wirelessly transmits the transmission AC power to the power receiving coil 141 .

[0103] The power receiving coil unit 140 includes a power receiving coil 141 (see Fig. 9 ). The receiving coil 141 is electromagnetically inductively coupled to the transmitting coil 131. Electromagnetic inductive coupling includes magnetic field coupling and electric field coupling. In addition, magnetic field coupling includes magnetic field resonance (also called magnetic field resonance). The distance between the receiving coil 141 and the transmitting coil 131 is set to suppress common mode noise (conductive noise). In addition, the distance between the receiving coil 141 and the transmitting coil 131 is set to a distance that can supply power. The distance between the receiving coil 141 and the transmitting coil 131 is set so that the attenuation of high-frequency electric power (i.e., high-frequency noise) between the receiving coil 141 and the transmitting coil 131 is below a threshold value, and so that the electric power from the transmitting coil 131 can be received in the receiving coil 141. The threshold value of the attenuation amount is set to a value sufficient to prevent damage or malfunction of the transmitting unit 120. The threshold value of the attenuation amount is, for example, -20 dB. The transmitted AC power received by the receiving coil unit 140 is output to the rectifying and smoothing unit 150.

[0104] The rectifying and smoothing unit 150 is electrically connected between the power receiving coil unit 140 and the power storage unit 160. The rectifying and smoothing unit 150 generates direct current power by performing full-wave rectification and smoothing on the transmitted alternating current power from the power receiving coil unit 140. The direct current power generated by the rectifying and smoothing unit 150 is stored in the power storage unit 160. The power storage unit 160 is electrically connected between the rectifying and smoothing unit 150 and the constant voltage control unit 180. In addition, the rectifying and smoothing unit 150 can generate direct current power by performing half-wave rectification and smoothing on the transmitted alternating current power from the power receiving coil unit 140.

[0105] The rectifying and smoothing unit 150 and the power transmission unit 120 are electrically connected to each other via the signal line 1250. The rectifying and smoothing unit 150 sends an instruction signal to the power transmission unit 120 via the signal line 1250. The instruction signal is a signal for instructing the power transmission unit 120 to supply or stop supplying the AC power. The instruction signal may include a state signal, an abnormality detection signal, and a cooling control signal for the power transmission coil unit 130 and the power reception coil unit 140. The state signal is a voltage detector 155v (refer to Fig.14 ) and current detector 155i (refer to Fig.14 ) detects the magnitude and / or phase of the voltage, current, and electric power. The abnormality detection signal is a signal used to convey to the power transmission unit 120 the failure of the rectification and smoothing unit 150 and / or the occurrence of temperature abnormality. The cooling control signal controls the cooling mechanism provided in the power transmission coil unit 130 and the power receiving coil unit 140. The cooling control signal controls the speed of the fan, for example, in the case of air cooling. In addition, in the case of liquid cooling, the flow rate and / or temperature of the refrigerant are controlled.

[0106] The constant voltage control unit 180 applies a voltage to at least the electric power consumption component 240 using the electric power stored in the power storage unit 160. The constant voltage control unit 180 can control the application of the voltage to at least the electric power consumption component 240 and the stop thereof.

[0107] In the plasma processing apparatus 100A, the power receiving coil 141 functions as a filter for high-frequency noise caused by high-frequency electric power such as the first RF signal and / or the second RF signal, thereby suppressing the high-frequency noise from propagating to the power supply outside the plasma processing apparatus.

[0108] Reference Figure 4 . Figure 4 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment. Figure 4 The plasma processing apparatus 100B shown will be described from the perspective of differences from the plasma processing apparatus 100A.

[0109] The plasma processing apparatus 100B further includes a voltage control converter 170. The voltage control converter 170 is a DC-DC converter connected between the power storage unit 160 and the constant voltage control unit 180. The voltage control converter 170 can be configured to input a certain (constant value, constant) output voltage to the constant voltage control unit 180 even when a voltage fluctuation occurs in the power storage unit 160. In addition, the voltage fluctuation in the power storage unit 160 can be generated in the form of a voltage drop corresponding to the stored electric power, for example, when the power storage unit 160 is composed of an electric double-layer structure.

[0110] Reference Figure 5 . Figure 5 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment. Figure 5 The plasma processing apparatus 100C shown will be described from the perspective of differences from the plasma processing apparatus 100B.

[0111] The plasma processing apparatus 100C further includes an RF filter 190. The RF filter 190 is connected between the rectifying and smoothing unit 150 and the power transmission unit 120. The RF filter 190 constitutes a portion of the signal line 1250. The RF filter 190 has a characteristic of suppressing the propagation of high-frequency electric power (high-frequency noise) via the signal line 1250. That is, the RF filter 190 includes a low-pass filter having the following characteristics: it has high impedance to high-frequency noise (conductive noise), but allows a relatively low-frequency indication signal to pass.

[0112] In the plasma processing apparatus 100C, the power storage unit 160, the voltage control converter 170 and the constant voltage control unit 180 are integrated with each other. That is, the power storage unit 160, the voltage control converter 170 and the constant voltage control unit 180 are arranged together in a metal shell or formed on a circuit board. As a result, the lengths of a pair of power supply lines (positive line and negative line) connecting the power storage unit 160 and the voltage control converter 170 to each other are shortened. In addition, the lengths of a pair of power supply lines (positive line and negative line) connecting the power storage unit 160 and the voltage control converter 170 to each other can be made equal. In addition, the lengths of a pair of power supply lines (positive line and negative line) connecting the voltage control converter 170 and the constant voltage control unit 180 to each other are shortened. In addition, the lengths of a pair of power supply lines connecting the voltage control converter 170 and the constant voltage control unit 180 to each other can be made equal. Therefore, it is possible to suppress malfunction and damage of the device caused by normal mode noise (potential difference between the positive line and the negative line). Furthermore, when another metal body for shielding the electromagnetic field is provided around the shell in the chamber 10 , one shell may not be made of metal.

[0113] Reference Figure 6 . Figure 6 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment. Figure 6 The plasma processing apparatus 100D shown will be described from the perspective of differences from the plasma processing apparatus 100C.

[0114] The plasma processing apparatus 100D does not include the RF filter 190. In the plasma processing apparatus 100D, the rectifying and smoothing section 150 includes a communication section 151 as a wireless section. The communication section 151 is arranged in the non-decompression space. In addition, the power transmission section 120 includes a communication section 121 as a wireless section. The communication section 121 is arranged in the space 110a. The above-mentioned instruction signal is transmitted between the rectifying and smoothing section 150 and the power transmission section 120 using the communication section 151 and the communication section 121. The details of the communication section 121 and the communication section 151 will be described later.

[0115] Reference Figure 7 . Figure 7 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment. Figure 7 The plasma processing apparatus 100E shown will be described from the perspective of differences from the plasma processing apparatus 100D.

[0116] The plasma processing apparatus 100E further includes an RF filter 200. The RF filter 200 is connected between the power receiving coil unit 140 and the rectifying and smoothing unit 150. The RF filter 200 has a characteristic of reducing or blocking high frequency noise propagating from the power receiving coil unit 140 to the power transmitting coil 131 and the power transmitting unit 120. Details of the RF filter 200 will be described later.

[0117] Hereinafter, the structure of each part used for wireless power supply in the plasma processing apparatus according to various exemplary embodiments will be described in detail.

[0118] [Structure of power transmission unit]

[0119] Figure 8 1 is a diagram showing a power transmission unit according to an exemplary embodiment. As described above, the power transmission unit 120 receives the frequency of the AC power from the AC power source 400 and converts the frequency of the AC power into a transmission frequency to generate a transmission AC power having the transmission frequency.

[0120] In one embodiment, the power transmission unit 120 includes a control unit 122, a rectifying and smoothing unit 123, and an inverter 124. The control unit 122 is composed of a processor such as a CPU or a programmable logic device such as an FPGA (Field-Programmable Gate Array).

[0121] The rectifying and smoothing unit 123 includes a rectifying circuit and a smoothing circuit. The rectifying circuit includes, for example, a diode bridge. The smoothing circuit includes, for example, a line capacitor. The rectifying and smoothing unit 123 generates a direct current power by performing full-wave rectification and smoothing on the alternating current power from the alternating current power source 400. In addition, the rectifying and smoothing unit 123 can generate a direct current power by performing half-wave rectification and smoothing on the alternating current power from the alternating current power source 400.

[0122] The inverter 124 generates a transmission AC power having a transmission frequency from the DC power output by the rectifying and smoothing unit 123. The inverter 124 is, for example, a full-bridge inverter including a plurality of triacs or a plurality of switching elements (e.g., FETs). The inverter 124 generates the transmission AC power by ON / OFF control of the plurality of triacs or the plurality of switching elements by the control unit 122. The transmission AC power output from the inverter 124 is output to the power transmission coil unit 130.

[0123] The power transmission unit 120 may further include a voltage detector 125v, a current detector 125i, a voltage detector 126v, and a current detector 126i. The voltage detector 125v detects a voltage value between a pair of power supply lines connecting the rectifying and smoothing unit 123 and the inverter 124 to each other. The current detector 125i detects a current value between the rectifying and smoothing unit 123 and the inverter 124. The voltage detector 126v detects a voltage value between a pair of power supply lines connecting the inverter 124 and the power transmission coil unit 130 to each other. The current detector 126i detects a current value between the inverter 124 and the power transmission coil unit 130. The voltage value detected by the voltage detector 125v, the current value detected by the current detector 125i, the voltage value detected by the voltage detector 126v, and the current value detected by the current detector 126i are notified to the control unit 122.

[0124] The power transmission unit 120 includes the above-mentioned communication unit 121. The communication unit 121 includes a driver 121d, a transmitter 121tx, and a receiver 121rx. The transmitter 121tx is a transmitter of a wireless signal or a transmitter of an optical signal. The receiver 121rx is a receiver of a wireless signal or a receiver of an optical signal. The communication unit 121 drives the transmitter 121tx using the driver 121d, and outputs the signal from the control unit 122 from the transmitter 121tx in the form of a wireless signal or an optical signal. The signal output from the transmitter 121tx is transmitted to the communication unit 151 (see FIG. 151 ) described later. Fig.14) is received. In addition, the communication unit 121 receives a signal such as the above-mentioned instruction signal from the communication unit 151 using the receiver 121rx, and inputs the received signal to the control unit 122 via the driver 121d. The control unit 122 controls the inverter 124 based on the instruction signal received from the communication unit 151 via the communication unit 121, the voltage value detected by the voltage detector 125v, the current value detected by the current detector 125i, the voltage value detected by the voltage detector 126v, and the current value detected by the current detector 126i, thereby switching the output and stopping of the transmission of AC power.

[0125] [Power transmission coil and power receiving coil]

[0126] Reference Figures 9 to 11 . Figures 9 to 11 1 and 2 are diagrams showing a power transmission coil unit and a power reception coil unit according to an exemplary embodiment. Fig. 9 As shown, the power transmission coil unit 130 may include a resonant capacitor 132a and a resonant capacitor 132b in addition to the power transmission coil 131. The resonant capacitor 132a is connected between one of a pair of power supply lines that connect the power transmission unit 120 and the power transmission coil unit 130 to each other and one end of the power transmission coil 131. The resonant capacitor 132b is connected between the other of the pair of power supply lines and the other end of the power transmission coil 131. The power transmission coil 131, the resonant capacitor 132a, and the resonant capacitor 132b constitute a resonant circuit for the transmission frequency. That is, the power transmission coil 131, the resonant capacitor 132a, and the resonant capacitor 132b have a resonant frequency that is substantially consistent with the transmission frequency. In addition, the power transmission coil unit 130 may include only one of the resonant capacitor 132a and the resonant capacitor 132b.

[0127] like Fig.10 and Fig.11 As shown, the power transmission coil unit 130 may further include a metal shell 130g. The metal shell 130g has an open end and is grounded. The power transmission coil 131 is arranged in the metal shell 130g in a manner to ensure the insulation distance. The power transmission coil unit 130 may further include a heat sink 134, a ferrite material 135 and a thermal conductive sheet 136. The heat sink 134 is arranged in the metal shell 130g and supported by the metal shell 130g. The ferrite material 135 is arranged on the heat sink 134. The thermal conductive sheet 136 is arranged on the ferrite material 135. The power transmission coil 131 is arranged on the thermal conductive sheet 136, and is opposite to the power receiving coil 141 across the open end of the metal shell 130g. As shown in FIG. Fig.11 As shown, a resonance capacitor 132a and a resonance capacitor 132b may also be housed in the metal housing 130g.

[0128] like Fig. 9As shown, the power receiving coil unit 140 includes a power receiving coil 141. The power receiving coil 141 is electromagnetically inductively coupled to the power transmitting coil 131. In addition to the power receiving coil 141, the power receiving coil unit 140 may also include a resonant capacitor 142a and a resonant capacitor 142b. The resonant capacitor 142a is connected between one of a pair of power supply lines extending from the power receiving coil unit 140 and one end of the power receiving coil 141. The resonant capacitor 142b is connected between the other of the pair of power supply lines and the other end of the power receiving coil 141. The power receiving coil 141, the resonant capacitor 142a, and the resonant capacitor 142b constitute a resonant circuit for the transmission frequency. That is, the power receiving coil 141, the resonant capacitor 142a, and the resonant capacitor 142b have a resonant frequency that is substantially consistent with the transmission frequency. In addition, the power receiving coil unit 140 may include only one of the resonant capacitor 142a and the resonant capacitor 142b.

[0129] like Fig.10 and Fig.11 As shown, the power receiving coil unit 140 may further include a metal shell 140g. The metal shell 140g has an open end and is grounded. The power receiving coil 141 is arranged in the metal shell 140g in a manner to ensure an insulation distance. The power receiving coil unit 140 may further include a spacer 143, a heat sink 144, a ferrite material 145 and a thermally conductive sheet 146. The spacer 143 is arranged in the metal shell 140g and is supported by the metal shell 140g. The spacer 143 will be described later. The heat sink 144 is arranged on the spacer 143. The ferrite material 145 is arranged on the heat sink 144. The thermally conductive sheet 146 is arranged on the ferrite material 145. The power receiving coil 141 is arranged on the thermally conductive sheet 146, and is opposite to the power transmitting coil 131 across the open end of the metal shell 140g. As shown Fig.11 As shown, the metal housing 140g may further contain a resonant capacitor 142a and a resonant capacitor 142b.

[0130] The spacer 143 is formed of a dielectric and is provided between the power receiving coil 141 and the metal case 140g (ground). The spacer 143 provides a spatial parasitic capacitance between the power receiving coil 141 and the ground.

[0131] [Impedance characteristics of the power receiving coil]

[0132] Reference Fig.12 . Fig.12 It is a diagram showing the impedance characteristics of the power receiving coil unit according to an exemplary embodiment. Fig.12 The impedance characteristics of the power receiving coil unit 140 corresponding to the thickness of the spacer 143 are shown. The thickness of the spacer 143 corresponds to the distance between the heat sink 144 and the metal housing 140g. Fig.12 As shown, the power receiving coil unit 140 can adjust the frequency f according to the thickness of the spacer 143.H and frequency f L Therefore, according to the difference of the power receiving coil unit 140, it is possible to provide high impedance in each of the frequencies of two high-frequency electric powers used in the plasma processing device, such as the first RF signal and the second RF signal. In addition, since high impedance can be obtained in the power receiving coil unit 140, it is possible to suppress the loss of high-frequency electric power and obtain a high processing rate (for example, etching rate).

[0133] [RF filter 200]

[0134] Reference Fig.13 . Fig.13 FIG. 1 is a diagram showing an RF filter according to an exemplary embodiment. Fig.13 As shown, the RF filter 200 is connected between the power receiving coil unit 140 and the rectifying and smoothing unit 150. The RF filter 200 includes an inductor 201a, an inductor 201b, a terminal capacitor 202a, and a terminal capacitor 202b. One end of the inductor 201a is connected to the resonant capacitor 142a, and the other end of the inductor 201a is connected to the rectifying and smoothing unit 150. One end of the inductor 201b is connected to the resonant capacitor 142b, and the other end of the inductor 201b is connected to the rectifying and smoothing unit 150. The terminal capacitor 202a is connected between one end of the inductor 201a and the ground. The terminal capacitor 202b is connected between one end of the inductor 201b and the ground. The inductor 201a and the terminal capacitor 202a form a low-pass filter. In addition, the inductor 201b and the terminal capacitor 202b form a low-pass filter. According to the RF filter 200, high impedance can be obtained at each of the frequencies of two high-frequency electric powers used in the plasma processing apparatus, namely the first RF signal and the second RF signal, so that loss of high-frequency electric power can be suppressed and a high processing rate (eg, etching rate) can be obtained.

[0135] [Rectifier and Smoothing Department]

[0136] Reference Fig.14 . Fig.14 1 is a diagram showing a rectifying and smoothing unit of an exemplary embodiment. In one embodiment, the rectifying and smoothing unit 150 includes a control unit 152, a rectifying circuit 153, and a smoothing circuit 154. The rectifying circuit 153 is connected between the power receiving coil unit 140 and the smoothing circuit 154. The smoothing circuit 154 is connected between the rectifying circuit 153 and the power storage unit 160. The control unit 152 is composed of a processor such as a CPU or a programmable logic device such as an FPGA (Field-Programmable Gate Array). In addition, the control unit 152 may be the same as the control unit 122 or different.

[0137] The rectifier circuit 153 outputs electric power generated by full-wave rectification of the AC power from the power receiving coil unit 140. The rectifier circuit 153 is, for example, a diode bridge. Alternatively, the rectifier circuit 153 may output electric power generated by half-wave rectification of the AC power from the power receiving coil unit 140.

[0138] The smoothing circuit 154 generates DC power by smoothing the power from the rectifying circuit 153. The smoothing circuit 154 may include an inductor 1541a, a capacitor 1542a, and a capacitor 1542b. One end of the inductor 1541a is connected to one of a pair of inputs of the smoothing circuit 154. The other end of the inductor 1541a is connected to the positive output (V OUT+ The positive output of the rectifying and smoothing unit 150 is transmitted through a positive line 160p (see Fig.23 (a) and Fig.23 (b)) is connected to one end of each of one or more capacitors of the power storage unit 160.

[0139] One end of the capacitor 1542a is connected to one of the pair of inputs of the smoothing circuit 154 and one end of the inductor 1541a. The other end of the capacitor 1542a is connected to the other of the pair of outputs of the smoothing circuit 154 and the negative output (V OUT- The negative output of the rectifying and smoothing unit 150 is transmitted through a negative electrode line 160m (see Fig.23 (a) and Fig.23 (b)) is connected to the other end of each of the one or more capacitors of the power storage unit 160. One end of the capacitor 1542b is connected to the other end of the inductor 1541a. The other end of the capacitor 1542b is connected to the other of the pair of outputs of the smoothing circuit 154 and the negative output (V OUT- ).

[0140] The rectifying and smoothing unit 150 may further include a voltage detector 155v and a current detector 155i. The voltage detector 155v detects a voltage value between a positive output and a negative output of the rectifying and smoothing unit 150. The current detector 155i detects a current value between the rectifying and smoothing unit 150 and the power storage unit 160. The voltage value detected by the voltage detector 155v and the current value detected by the current detector 155i are notified to the control unit 152. The control unit 152 generates the above-mentioned instruction signal according to the electric power stored in the power storage unit 160. For example, when the electric power stored in the power storage unit 160 is less than the first threshold value, the control unit 152 generates an instruction signal for instructing the power transmission unit 120 to supply power, that is, output and transmit AC power. The first threshold value is, for example, the electric power consumption of a load such as the electric power consumption component 240. In addition, the first threshold value may be a value obtained by multiplying the electric power consumption of a load such as the electric power consumption component 240 by a certain value (for example, a value in the range of 1 or more and 3 or less) in consideration of a margin. On the other hand, when the electric power stored in the power storage unit 160 is greater than the second threshold value, the control unit 152 generates an instruction signal for instructing the power transmission unit 120 to stop supplying power, that is, to stop outputting and transmitting AC electric power. The second threshold value is a value that does not exceed the limit storage electric power of the power storage unit 160. The second threshold value is, for example, a value obtained by multiplying the limit storage electric power of the power storage unit 160 by a certain value (for example, a value less than 1).

[0141] The rectifying and smoothing unit 150 includes the above-mentioned communication unit 151. The communication unit 151 includes a driver 151d, a transmitter 151tx, and a receiver 151rx. The transmitter 151tx is a transmitter of a wireless signal or a transmitter of an optical signal. The receiver 151rx is a receiver of a wireless signal or a receiver of an optical signal. The communication unit 151 drives the transmitter 151tx using the driver 151d, and outputs a signal from the control unit 122 such as an instruction signal from the transmitter 151tx as a wireless signal or an optical signal. The signal output from the transmitter 151tx is received in the communication unit 121 of the power transmission unit 120. In addition, the communication unit 151 receives a signal from the communication unit 121 using the receiver 151rx, and inputs the received signal to the control unit 152 via the driver 151d.

[0142] [RF filter 190]

[0143] Reference Fig.15 . Fig.15 FIG. 1 is a diagram showing an RF filter 190 according to an exemplary embodiment. Fig.15As shown, the signal line 1250 may include: a first signal line electrically connecting the signal output (Tx) of the power transmission unit 120 with the signal input (Rx) of the rectification and smoothing unit 150; and a second signal line electrically connecting the signal input (Rx) of the power transmission unit 120 with the signal output (Tx) of the rectification and smoothing unit 150. The signal line 1250 may also include: a signal line connecting the first reference voltage terminal (VCC) of the power transmission unit 120 with the first reference voltage terminal (VCC) of the rectification and smoothing unit 150; and a signal line connecting the second reference voltage terminal (GND) of the power transmission unit 120 with the second reference voltage terminal (GND) of the rectification and smoothing unit 150. The signal line 1250 may be a shielded cable covered by a shield of ground potential. In this case, the multiple signal lines constituting the signal line 1250 may be covered by the shield separately or together. The RF filter 190 may provide a low-pass filter for each of the multiple signal lines constituting the signal line 1250. The low-pass filter may be an LC filter including an inductor and a capacitor. The inductor of the low-pass filter constitutes a portion of the corresponding signal line. The capacitor is connected between one end of the inductor connected to the power transmission unit 120 and the ground. According to the RF filter 190, the propagation of high-frequency electric power (high-frequency noise) between the rectifying and smoothing unit 150 and the power transmission unit 120 via the signal line 1250 can be suppressed.

[0144] [Communication section of the power transmission section and communication section of the rectification and smoothing section]

[0145] Reference Figure 16 to Figure 18 . Fig.16 It is a diagram showing a communication unit of a power transmission unit and a communication unit of a rectification and smoothing unit according to an exemplary embodiment. Fig.17 and Fig.18 Each of the figures schematically shows a plasma processing apparatus according to another exemplary embodiment. Figure 6 , Figure 7 , Fig.16 , Fig.17 and Fig.18 As shown, the communication unit 121 and the communication unit 151 can be configured to transmit signals such as the above-mentioned indication signal to each other via wireless communication. Communication via wireless communication can be performed by optical communication. When the communication unit 121 and the communication unit 151 transmit signals to each other via wireless communication, the communication unit 121 and the communication unit 151 can be arranged at any position as long as there is no obstruction between them. According to the examples shown in these figures, the RF filter 190 can be omitted. In addition, in the case of including Figure 16 to Figure 18 In various exemplary embodiments of the examples shown, the signal line 1250 may be a shielded cable covered by a shield at ground potential. In this case, the plurality of signal lines constituting the signal line 1250 may be covered by the shield individually or together.

[0146] Reference Figure 19 to Figure 22 . Fig.19 It is a diagram showing a communication unit of a power transmission unit and a communication unit of a rectifying and smoothing unit according to another exemplary embodiment. Figure 20 to Figure 22 Each of the figures schematically shows a plasma processing apparatus according to another exemplary embodiment. Figure 19 to Figure 22 As shown in the figure, the communication unit 121 and the communication unit 151 can be configured to transmit a signal (optical signal) such as the above-mentioned instruction signal between each other via the optical fiber 1260, that is, by optical fiber communication. When the communication unit 121 and the communication unit 151 transmit signals between each other via the optical fiber 1260, the communication unit 121 and the communication unit 151 can be arranged at any position as long as the bending radius of the optical fiber 1260 is within the allowable range. In the examples shown in these figures, the RF filter 190 can also be omitted.

[0147] [Electricity storage unit]

[0148] Reference Fig.23 (a) and Fig.23 (b). Fig.23 (a) and Fig.23 (b) and (c) are diagrams showing a storage unit of an exemplary embodiment. Fig.23 As shown in (a), the power storage unit 160 includes a capacitor 161. The capacitor 161 is connected between a pair of power supply lines, that is, a positive line 160p and a negative line 160m. The positive line 160p is connected from the positive output (V OUT+ ) extends toward the load. The negative line 160m extends from the negative output (V OUT- ) extends toward the load. The capacitor 161 may be a polarized capacitor. The capacitor 161 may be a double-layer structure or a lithium-ion battery.

[0149] like Fig.23 As shown in (b), the storage unit 160 may include a plurality of capacitors 161. The plurality of capacitors 161 are connected in series between the positive line 160p and the negative line 160m. The plurality of capacitors 161 may have the same electrostatic capacitance as each other, or may have electrostatic capacitances different from each other. Each of the plurality of capacitors 161 may be a polarized capacitor. Each of the plurality of capacitors 161 may be an electric double layer structure or a lithium ion battery. The storage unit 160 needs to be used under the condition that the total value of the input voltage thereto and the line potential difference caused by normal mode noise is lower than the allowable input voltage. When the storage unit 160 includes a plurality of capacitors 161 connected in series, the allowable input voltage of the storage unit 160 is increased. Therefore, according to Fig.23 In the example shown in (b), the noise resistance of the power storage unit 160 is improved.

[0150] [Voltage Control Converter]

[0151] Reference Fig.24 . Fig.24 1 is a diagram showing a voltage control converter according to an exemplary embodiment. The voltage control converter 170 is a DC-DC converter. The voltage control converter 170 is connected between the power storage unit 160 and the constant voltage control unit 180. IN+ ) is connected to the positive line 160p. At the negative input (V IN- ) is connected to the negative line 160m. The positive output (V OUT+ ) is connected to the positive input (V IN+ The negative output (V OUT- ) is connected to the negative input (V IN- ).

[0152] The voltage control converter 170 may include a control unit 172, a low pass filter 173, a transformer 174, and a capacitor 175. The low pass filter 173 may include an inductor 1731a, a capacitor 1732a, and a capacitor 1732b. One end of the inductor 1731a is connected to the positive input (V IN+ The other end of the inductor 1731a is connected to one end of the primary coil of the transformer 174. One end of the capacitor 1732a is connected to one end of the inductor 1731a and the positive input (V IN+ The other end of the capacitor 1732a is connected to the negative input (V IN- ). One end of the capacitor 1732b is connected to the other end of the inductor 1731a. The other end of the capacitor 1732b is connected to the negative input (V IN- ).

[0153] The transformer 174 includes a primary coil 1741, a secondary coil 1742, and a switch 1743. The other end of the primary coil 1741 is connected to the negative input (V IN- One end of the secondary coil 1742 is connected to one end of the capacitor 175 and the positive output (V OUT+ The other end of the secondary coil 1742 is connected to the other end of the capacitor 175 and the negative output (V OUT- ).

[0154] The switch 1743 is connected to a driver 1744. The driver 1744 switches the switch 1743. When the switch 1743 is closed, the other end of the primary coil 1741 is connected to the negative input (V IN- ) is in the on state, the other end of the primary coil 1741 is connected to the negative input (V IN- ), the DC power from the voltage control converter 170 is supplied to the constant voltage control unit 180. On the other hand, when the switch 1743 is turned off, that is, the other end of the primary side coil 1741 is connected to the negative input (V IN- ) is in a non-conducting state, the other end of the primary coil 1741 is connected to the negative input (V IN- ) is disconnected, and the supply of DC power from the voltage control converter 170 to the constant voltage control unit 180 is blocked.

[0155] The voltage control converter 170 may further include a voltage detector 176v and a current detector 176i. The voltage detector 176v detects a voltage value between both ends of the secondary coil 1742 or a voltage value between the positive output and the negative output of the voltage control converter 170. The current detector 176i measures a current value between the other end of the secondary coil 1742 and the negative output of the voltage control converter 170. The voltage value detected by the voltage detector 176v and the current value detected by the current detector 176i are notified to the control unit 172. In addition, the control unit 172 may be the same as or different from at least one of the control unit 122 and the control unit 152.

[0156] When the voltage value detected by the voltage detector 176v is above the threshold value, the control unit 172 controls the driver 1744 to block the supply of DC power from the voltage control converter 170 to the constant voltage control unit 180. The voltage value between the positive output and the negative output of the voltage control converter 170 is the sum of the output voltage value of the voltage control converter 170 and the line potential difference caused by the normal mode noise. In this embodiment, it is possible to suppress the damage to the load of the voltage control converter 170 caused by the overvoltage caused by the line potential difference caused by the normal mode noise.

[0157] [Constant voltage control unit]

[0158] Reference Fig.25 and Fig.26 . Fig.25 and Fig.26 The constant voltage control unit 180 is connected between the power storage unit 160 and at least one power consumption component 240 and is configured to control the application of voltage (application of DC voltage) to at least one power consumption component 240 and stop thereof.

[0159] The constant voltage control unit 180 includes a control unit 182 and at least one switch 183. The positive input (V IN+ ) is connected to the power consumption component 240 via the switch 183. The negative input (V IN- ) is connected to the electric power consumption component 240. The switch 183 is controlled by the control unit 182. When the switch 183 is closed, the DC voltage from the constant voltage control unit 180 is applied to the electric power consumption component 240. When the switch 183 is opened, the application of the DC voltage from the constant voltage control unit 180 to the electric power consumption component 240 is stopped. In addition, the control unit 182 may be the same as or different from at least any one of the control unit 122, the control unit 152, and the control unit 172.

[0160] exist Fig.25 and Fig.26 In the illustrated embodiment, the plasma processing apparatus includes a plurality of power consumption components 240. The constant voltage control unit 180 includes a control unit 182 and a plurality of switches 183. The positive input (V IN+ ) is connected to a plurality of power consumption components 240 via a plurality of switches 183. The negative input (V IN- ) is connected to multiple power consumption components 240.

[0161] exist Fig.25 and Fig.26 In the illustrated embodiment, the plurality of electric power consumption components 240 may include a plurality of heaters (resistance heating elements). The plurality of heaters may be disposed within the substrate support portion 11 . Fig.25 In the illustrated embodiment, a plurality of resistors 260 are arranged near each of the plurality of heaters. Each of the plurality of resistors 260 has a resistance value that changes with temperature. Each of the plurality of resistors 260 is, for example, a thermistor. Each of the plurality of resistors 260 is connected in series with a reference resistor (not shown). The constant voltage control unit 180 includes a plurality of measuring units 184. Each of the plurality of measuring units 184 applies a reference voltage to the series connection of a corresponding resistor among the plurality of resistors 260 and a reference resistor, and detects a voltage value between the two ends of the resistor. Each of the plurality of measuring units 184 notifies the control unit 182 of the detected voltage value. The control unit 182 determines the temperature of the area where the corresponding heater among the plurality of heaters is arranged based on the notified voltage value, and controls the application of a DC voltage to the corresponding heater so that the temperature of the area approaches the target temperature. In addition, an optical fiber thermometer may be arranged instead of the plurality of resistors 260. In this case, since wiring between the plurality of resistors 260 and the plurality of measuring units 184 is not required, the influence of high-frequency conductive noise on the electric power consumption component 240 can be eliminated.

[0162] exist Fig.26 In the illustrated embodiment, the constant voltage control unit 180 includes a voltage detector 185v and a plurality of current detectors 185i. The voltage detector 185v detects a voltage value applied to each of the plurality of heaters. The plurality of current detectors 185i measure the value of the current supplied to the corresponding heater among the plurality of heaters, that is, the current value. The plurality of measuring units 184 determine the resistance value of the corresponding heater among the plurality of heaters based on the current value detected by the corresponding current detector among the plurality of current detectors 185i and the voltage value detected by the voltage detector 185v. The control unit 182 determines the temperature of each of the plurality of zones to which each of the plurality of heaters is configured based on the resistance value detected by each of the plurality of heaters. The control unit 182 controls the application of a DC voltage to each of the plurality of heaters so that the temperature of each of the plurality of zones approaches the target temperature.

[0163] [Power supply without using the power storage unit]

[0164] Reference Fig. 27 . Fig. 27 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment. Fig. 27 The plasma processing device 100G shown in FIG. Figure 7 The plasma processing apparatus 100E shown will be described from different angles.

[0165] The plasma processing apparatus 100G does not include the power storage unit 160. In the plasma processing apparatus 100G, the rectifying and smoothing unit 150 is connected to the constant voltage control unit 180 without passing through the power storage unit 160 and the voltage control converter 170. That is, in the plasma processing apparatus 100E, the electric power generated by the rectifying and smoothing unit 150 is supplied from the constant voltage control unit 180 to at least one electric power consumption component 240 without passing through the power storage unit 160 and the voltage control converter 170.

[0166] As described above, the constant voltage control unit 180 controls the voltage application and stop of each of the plurality of power consumption components 240. Therefore, in the plasma processing device 1, the load receiving the power from the rectifying and smoothing unit 150 via the constant voltage control unit 180 varies. That is, the load resistance value R L To supply the load with the load resistance R L The control unit 122 of the power transmission unit 120 detects the input impedance Z of the power transmission unit 120 according to the electric power. in Thus, the control unit 122 detects the load change and determines the input impedance Z in Or load resistance value R L The output electric power from the electric power transmission unit 120 is adjusted according to the required electric power level.

[0167] Here, refer to Fig.28 . Fig.28 represents the resonance in the transmission frequency of the electric power transmitted from the power transmission unit 120, and the input voltage V in With input current I in The equivalent circuit diagram of an example of a power transmission coil unit and a power reception coil unit in a state where the phase difference is zero (power factor 100%). The equivalent circuit diagram of the power transmission coil unit and the power reception coil is, for example, Fig.28 As shown, the power transmission coil 131 has a self-inductance L1, a load resistor of the power transmission coil 131 has a load resistance value R1, a resonant capacitor of the power transmission coil unit 130 has an electrostatic capacitance C1, and a mutual inductance L m The three inductors between the power transmission coil 131 and the power receiving coil 141 are: the power receiving coil 141 having a self-inductance L2, the load resistance of the power receiving coil 141 having a load resistance value R2, and the resonant capacitor of the power receiving coil unit 140 having an electrostatic capacitance C2. Fig.28 In the equivalent circuit, Z in is the input impedance of the power transmission unit 120, V in is the input voltage from the power transmission unit 120 to the power transmission coil unit 130, I in is the input current from the power transmission unit 120 to the power transmission coil unit 130. Fig.28 The equivalent circuit, input impedance Z in It is defined by the following formula (1).

[0168] Z in =V in / I in =R1+(2πfL m ) 2 / (R2+R L )……(1)

[0169] In equation (1), f is the transmission frequency of the electric power transmitted from power transmission unit 120 .

[0170] The control unit 122 obtains the input voltage V based on the voltage measured by the voltage detector 126v. in The effective value of the input current I is obtained based on the current measured by the current detector 126i. in The control unit 122 can be based on the input voltage V in and input current I in , the input impedance Z is obtained by equation (1) in The control unit 122 can also use the input impedance Z as the input impedance based on equation (1). in Calculate the load resistance R L .

[0171] The control unit 122 uses at least one table to calculate the input impedance Z as a parameter value.in Or load resistance value R L The control unit 122 can determine the output voltage V of the power transmission unit 120. out The peak value V P , output voltage V out Duty ratio, and output current I out The amplitude I A , as a parameter for determining the required electric power level of the output electric power from the power transmission unit 120. In addition, at least one table is stored in a storage device 122m (see Fig.31 The storage device 122m may be a part of the power transmission unit 120.

[0172] Fig.29 and Fig.30 Each of them is a diagram showing an example of at least one of the above-mentioned tables. When the distance (interval length) between the power transmission coil 131 and the power reception coil 141 is fixed, the control unit 122 can use a table stored in the storage device 122m. The table is as follows Fig.29 As shown, with input impedance Z in Store the peak value V P , duty cycle Duty and amplitude I A The control unit 122 can set the input impedance Z in Used as a key to refer to Fig.29 As shown in the table, the input impedance Z is determined in The corresponding required electrical power level, that is, the peak value V P , duty cycle Duty and amplitude I A The control unit 122 controls each part of the power transmission unit 120 to output an output voltage V out The peak value V P and duty cycle Duty and has an output current I out The amplitude I A The output electrical power.

[0173] Or, at the transmission frequency f, mutual inductance L m , load resistance value R1 and load resistance value R2 are stored in the storage device 122m, the control unit 122 can be based on the transmission frequency f, the mutual inductance L m , load resistance value R1, load resistance value R2 and input impedance Z in , calculate the load resistance value R through formula (1) LIn addition, the storage device 122m may store 2πf instead of the transmission frequency f. In addition, the storage device 122m may store the self-inductance L1 of the power transmission coil 131, the self-inductance L2 of the power reception coil 141, and the coupling coefficient k between the power transmission coil 131 and the power reception coil 141 instead of the mutual inductance L. m The control unit 122 can calculate the mutual inductance L according to the self-inductance L1, the self-inductance L2 and the coupling coefficient k. m Alternatively, 2πfL may be stored in the storage device 122m. m or (2πfL m ) 2 Instead of transmission frequency f and mutual inductance L m .

[0174] In addition, the table Fig.30 As shown, with the load resistance value R L Store the peak value V P , duty cycle Duty and amplitude I A The control unit 122 can set the load resistance value R L Refer to it as a key Fig.30 As shown in the table, determine the load resistance value R L The corresponding required electrical power level, that is, the peak value V P , duty cycle Duty and amplitude I A The control unit 122 controls each part of the power transmission unit 120 to output an output voltage V out The peak value V P and duty cycle Duty and has an output current I out The amplitude I A The output electrical power.

[0175] In addition, when the distance (gap length) between the power transmission coil 131 and the power reception coil 141 is variable as described later, the storage device 122m stores the same information as described below. Fig.29 or Fig.30 There are multiple tables like this. The multiple tables are prepared for each of the multiple settable distances between the power transmission coil 131 and the power reception coil 141. The control unit 122 can select a table to be used according to the current distance between the power transmission coil 131 and the power reception coil 141.

[0176] As described above, according to the plasma processing apparatus 100G, it is possible to adjust the load resistance value R of the power consumption component 240 according to the load resistance value R of the power consumption component 240. L That is, according to the plasma processing apparatus 100G, the load resistance value R of the power consumption component 240 can be reduced to L The electric power corresponding to the change in load (hereinafter sometimes referred to as "load variation") is supplied by electromagnetic induction coupling without passing through the power storage unit.

[0177] In addition, the control unit 122 can obtain the input impedance Z in To determine the load resistance value R L , so there is no need to issue an electric power change instruction from the constant voltage control unit 180 via the communication unit 151 and the communication unit 121. However, since the constant voltage control unit 180 causes a load change, before the load change occurs, the constant voltage control unit 180 can notify the control unit 122 of the electric power change instruction in advance via the communication unit 151 and the communication unit 121. In addition, the load change can be performed by the constant voltage control unit 180 at a timing synchronized with the output electric power with the transmission frequency f output from the power receiving coil unit 140. Specifically, a synchronization signal synchronized with the output electric power with the transmission frequency f from the power receiving coil unit 140 can be generated in the rectification and smoothing unit 150, and the constant voltage control unit 180 can be caused to cause a load change at a timing synchronized with the output electric power using the synchronization signal. In addition, the load change can be set not to be performed simultaneously with the change in the distance between the power transmitting coil 131 and the power receiving coil 141.

[0178] Below, refer to Fig. 27 and Fig.31 . Fig.31 FIG. 2 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment. Fig. 27 and Fig.31 As shown, the plasma processing apparatus 100G may include an overcurrent power consumption circuit 500. The overcurrent power consumption circuit 500 may include a line capacitor 501, an overcurrent power consumption load 502, and a switch element 503.

[0179] The line capacitor 501 can be connected between a pair of power supply lines, namely, a positive line and a negative line, connecting the rectifying and smoothing unit 150 and the constant voltage control unit 180 via a switching element 503. Specifically, one end of the line capacitor 501 is connected to the switching element 503, and the other end of the line capacitor 501 is connected to the negative line.

[0180] The over-power consumption load 502 (a load that consumes excess electric power / electric energy / electricity) is a load for consuming the electric power (electric energy / electricity) stored in the line capacitor 501. The over-power consumption load 502 can consume electric power by converting the electric power into heat. A cooling mechanism such as a fan for cooling the over-power consumption load 502 can be provided. The over-power consumption load 502 can be selectively connected to the line capacitor 501 via the switching element 503. One end of the over-power consumption load 502 is connected to the switching element 503, and the other end of the over-power consumption load 502 is connected to the negative line.

[0181] When the switch element 503 is in the on state, the connection between the line capacitor 501 and the overcurrent consumption load 502 is cut off, and one end of the line capacitor 501 is connected to the positive line. When the switch element 503 is in the off state, the connection between one end of the line capacitor 501 and the positive line is cut off, and one end of the line capacitor 501 is connected to one end of the overcurrent consumption load 502. As the switch element 503, a semiconductor switch element can be used from the viewpoint of high-speed responsiveness.

[0182] The state of the switching element 503 can be controlled by, for example, the control unit 182 of the constant voltage control unit 180. Fig.32 , the control of the switching element 503 is described. Fig.32 This is a timing chart showing an example of load resistance value, input impedance, transmitted electric power, and the state of a switching element.

[0183] When a load change occurs, the control unit 182 of the constant voltage control unit 180 particularly reduces the load resistance value R L When the control unit 182 changes the level of the electric power transmitted from the power transmission unit 120 to the load resistance value R L After the time of the corresponding electric power level, the state of the switch element 503 is set to OFF.

[0184] exist Fig.32 In the example, at time t1, the load resistance value R L From the load resistance value R LA Change to load resistance value R LB , the state of the switch element 503 changes from off to on. Fig.32 In the example, before time t2, the input impedance Z obtained by the control unit 122 of the power transmission unit 120 in is related to the load resistance value R LA The corresponding Z inA Therefore, the transmission power before time t2 is P inA .

[0185] exist Fig.32 In the example, at time t2, the input impedance Z obtained by the control unit 122 of the power transmission unit 120 in becomes the load resistance value R LB The corresponding Z inB Then, in Fig.32 In the example, when the input impedance Z is detected inB At the next moment t3, the transmitted electric power is from P inA Change to P inB , the state of the switch element 503 is set to be off.

[0186] According to the overcurrent power consumption circuit 500, electric power is temporarily stored in the line capacitor 501 after the load change occurs and before the electric power level is changed. Therefore, it is possible to suppress the flow of a large current into the constant voltage control unit 180 and the electric power consumption component 240, and suppress damage to the constant voltage control unit 180 and the electric power consumption component 240. In addition, according to the overcurrent power consumption circuit 500, the electric power stored in the line capacitor 501 is consumed by the overcurrent power consumption load 502.

[0187] Below, refer to Fig.33 and Fig.34 , describing a power supply method according to an exemplary embodiment. Fig.33 and Fig.34 is a flow chart of a power supply method according to an exemplary embodiment. Fig.33 and Fig.34 The power supply method described above (hereinafter referred to as “method MT”) can be applied to the plasma processing apparatus 100G and plasma processing apparatuses of various exemplary embodiments described below.

[0188] exist Fig.33 In step STa of the method MT shown in the figure, the power of the plasma processing device is turned on. In the subsequent step STb, the standby power level, i.e., the voltage V Si (effective value) and current I Si Then, in step STc, the control unit 122 obtains the input voltage V in (effective value) and input current I in Then, in step STd, it is determined whether the input voltage V in Equal to voltage V Si And the input current I in Equal to the current I si If the condition is not satisfied in step STd, the process from step STb is repeated. In addition, if the condition is satisfied in step STd, the standby power state continues. As a result, the communication unit 151 of the rectifying and smoothing unit 150 is started, and the communication unit 151 can communicate with the communication unit 121 of the power transmission unit 120. In addition, the control unit 182 of the constant voltage control unit 180 is started, and the state monitoring and abnormality detection of the heater and the like can be performed.

[0189] like Fig.34 As shown, in step STe when the standby power state continues, when the load changes, in the subsequent step STf, the control unit 122 obtains the input voltage V in (effective value) and input current I inIn the subsequent step STg, it is determined whether the input voltage V in Equal to voltage V Si And the input current I in Equal to the current I si If the condition is met in step STg, repeat step STf.

[0190] On the other hand, if the condition is not satisfied in step STg, the control unit 122 determines the input impedance Z in the subsequent step STh. in Or load resistance value R L In the subsequent step STi, the control unit 122 determines the input impedance Z in Or load resistance value R L In the subsequent step STj, the electric power having the required electric power level is transmitted from the power transmission unit 120. The electric power having the required electric power level has a voltage V SC (effective value) and current I SC (valid value).

[0191] In the subsequent step STk, the control unit 122 obtains the input voltage V in (effective value) and input current I in Then, in step STm, it is determined whether the input voltage V in Equal to voltage V SC And the input current I in Equal to the current I SC If the condition is not satisfied in step STm, step STk is repeated. If the condition is satisfied in step STm, the electric power is continuously transmitted from the power transmission unit 120 until it is instructed to stop.

[0192] Various modified embodiments of the plasma processing apparatus 100G will be described below. Figure 35 to Figure 38 and Fig.41 Each of the diagrams schematically shows a plasma processing apparatus according to still another exemplary embodiment. Fig.39 and Fig.40 FIG. 1 is a diagram showing a power transmission coil unit and a power reception coil unit in a plasma processing device according to another exemplary embodiment. Figure 39 to Figure 41 The illustrated exemplary embodiment will be described from the perspective of differences from the plasma processing apparatus 100G.

[0193] exist Fig.35In the plasma processing device 100Ga shown, the power receiving coil unit 140 and the power transmitting coil unit 130 are fixed to each other by a fixing mechanism. The fixing mechanism may include an insulating component 340i. In one example, the insulating component 340i is fixed to the side wall of the metal shell 130g of the power transmitting coil unit 130 and the side wall of the metal shell 140g of the power receiving coil unit 140 by a fastening component such as a screw. The screw may be, for example, an insulating resin screw or the like. Thus, the relative positional relationship between the power transmitting coil 131 and the power receiving coil 141 is fixed. According to the plasma processing device 100Ga, the relative positioning accuracy between the power transmitting coil 131 and the power receiving coil 141 is improved by using the fixing mechanism. As a result, the power supply efficiency is improved.

[0194] exist Fig.36 In the plasma processing device 100Gb shown, the power transmission coil unit 130 and the power receiving coil unit 140 are integrated. Specifically, the power transmission coil 131 and the power receiving coil 141 are housed in a metal shell 340g. In one embodiment, the metal shell 340g may further house a resonant capacitor of the power transmission coil unit 130 and a resonant capacitor of the power receiving coil unit 140. According to the plasma processing device 100Gb, the leakage of high-frequency noise to the outside is suppressed by using the metal shell 340g.

[0195] Fig.37 The plasma processing apparatus 100Gc shown is different from the plasma processing apparatus 100Gb in that the distance (interval length) between the power transmission coil 131 and the power reception coil 141 is variable. Specifically, the plasma processing apparatus 100Gc further includes a drive system 340d and a sensor 340m.

[0196] The drive system 340d is configured to move at least one of the power transmission coil 131 and the power reception coil 141 to change the distance (interval length) between the power transmission coil 131 and the power reception coil 141. In one embodiment, the drive system 340d can move the power transmission coil 131.

[0197] The drive system 340d includes at least one actuator. The at least one actuator is composed of a hydraulic or pneumatic cylinder, a motor or a piezoelectric element. The drive system 340d may include a plurality of actuators. The drive system 340d may use the sensor 340m to detect the parallelism of the power transmission coil 131 and the power receiving coil 141, and control at least one actuator according to the detection result of the sensor 340m to keep the power transmission coil 131 and the power receiving coil 141 parallel to each other.

[0198] According to the plasma processing apparatus 100Gc, since the distance between the power transmission coil 131 and the power reception coil 141 can be changed, the power transmission efficiency between the power transmission coil 131 and the power reception coil 141 can be improved.

[0199] Reference Fig.38 As described above, the space 110h includes the space in the chamber 10 (plasma processing space 10s) and the space 110u which is a non-decompression space. Fig.38 In the plasma processing apparatus 100Gd shown, the power receiving coil 141 is disposed in the space 110u together with the rectifying and smoothing unit 150 and the power storage unit 160. On the other hand, the power transmitting coil 131 is disposed in the space 110a.

[0200] In the plasma processing device 100Gd, a high impedance circuit can be provided for the frequency of the high-frequency electric power by utilizing the parasitic capacitance generated in the space between the power transmission coil 131 and the power reception coil 141. Therefore, the leakage of the high-frequency electric power is reduced, and the utilization efficiency of the high-frequency electric power is improved. Therefore, if the process in the plasma processing device 100Gd is etching, a high etching rate can be obtained.

[0201] In one embodiment, the power receiving coil 141 may be arranged in the space 110u at a distance greater than the insulation distance from the ground frame 110. In the plasma processing device 100Gd, the potential of the power receiving coil 141 is close to the potential of the high-frequency electric power in the space 110h or the space 110u, and the influence of the common mode noise, that is, the conductive noise, is reduced according to the inter-coil distance between the power transmission coil 131 and the power receiving coil 141. Therefore, Fig.38 As shown, the power receiving coil 141 and the rectifying and smoothing unit 150 may be directly connected without passing through a filter such as the RF filter 200 .

[0202] In one embodiment, the power receiving coil unit 140 in the space 110u may include a housing 140c (insulating housing) made of an insulating material. The power receiving coil 141 is accommodated in the housing 140c. The housing 140c extends on the back side of the power receiving coil 141 relative to the power transmitting coil 131 and surrounds the outer periphery of the power receiving coil 141.

[0203] In one embodiment, the plasma processing apparatus 100Gd may further include a cooling mechanism 340f. The cooling mechanism 340f may be a fan or a blower. The cooling mechanism 340f is configured to cool the power transmission coil unit 130. The cooling mechanism 340f may also be configured to cool the power reception coil unit 140.

[0204] In addition, in the plasma processing apparatus 100Gd, the power transmission coil unit 130 and the power transmission unit 120 may be electrically connected via the RF filter 200. In this case, propagation of the conductive noise to the power transmission unit 120 is further suppressed.

[0205] like Fig.39 As shown, in the plasma processing apparatus of various exemplary embodiments, the power transmission coil unit 130 may include two or more power transmission coils 131 connected in series. In addition, the power receiving coil unit 140 may include two or more power receiving coils 141 connected in series. The two or more power transmission coils 131 are electromagnetically coupled to the two or more power receiving coils 141.

[0206] like Fig.40 As shown, in the plasma processing apparatus of various exemplary embodiments, the power transmission coil unit 130 may include two power transmission coils 131. In addition, the power receiving coil unit 140 may include two power receiving coils 141. The first power transmission coil of the two power transmission coils 131 is electromagnetically coupled to the first power receiving coil of the two power receiving coils 141. The second power transmission coil of the two power transmission coils 131 is electromagnetically coupled to the second power receiving coil of the two power receiving coils 141.

[0207] One end of the first power transmission coil is connected to the power transmission unit 120 via one of the two resonant capacitors 132a and the node 130Na. The other end of the first power transmission coil is connected to the power transmission unit 120 via one of the two resonant capacitors 132b and the node 130Nb. One end of the second power transmission coil is connected to the power transmission unit 120 via the other of the two resonant capacitors 132a and the node 130Na. The other end of the second power transmission coil is connected to the power transmission unit 120 via the other of the two resonant capacitors 132b and the node 130Nb.

[0208] One end of the first power receiving coil is connected to the rectifying and smoothing unit 150 via one of the two resonant capacitors 142a and the node 140Na. The other end of the first power receiving coil is connected to the rectifying and smoothing unit 150 via one of the two resonant capacitors 142b and the node 140Nb. One end of the second power receiving coil is connected to the rectifying and smoothing unit 150 via the other of the two resonant capacitors 142a and the node 140Na. The other end of the second power receiving coil is connected to the rectifying and smoothing unit 150 via the other of the two resonant capacitors 142b and the node 140Nb.

[0209] In addition, the single resonant capacitor 132a may be connected between the node 130Na and the power transmission unit 120. In addition, the single resonant capacitor 132b may be connected between the node 130Nb and the power transmission unit 120. In this case, one end of the first power transmission coil is connected to the power transmission unit 120 via the node 130Na and the single resonant capacitor 132a, and the other end of the first power transmission coil is connected to the power transmission unit 120 via the node 130Nb and the single resonant capacitor 132b. In addition, one end of the second power transmission coil is connected to the power transmission unit 120 via the node 130Na and the single resonant capacitor 132a, and the other end of the second power transmission coil is connected to the power transmission unit 120 via the node 130Nb and the single resonant capacitor 132b.

[0210] In addition, the single resonant capacitor 142a may be connected between the node 140Na and the rectifying and smoothing unit 150. In addition, the single resonant capacitor 142b may be connected between the node 140Nb and the rectifying and smoothing unit 150. In this case, one end of the first power receiving coil is connected to the rectifying and smoothing unit 150 via the node 140Na and the single resonant capacitor 142a, and the other end of the first power receiving coil is connected to the rectifying and smoothing unit 150 via the node 140Nb and the single resonant capacitor 142b. In addition, one end of the second power receiving coil is connected to the rectifying and smoothing unit 150 via the node 140Na and the single resonant capacitor 142a, and the other end of the second power receiving coil is connected to the rectifying and smoothing unit 150 via the node 140Nb and the single resonant capacitor 142b.

[0211] Fig.41 The difference between the plasma processing apparatus 100Ge shown and the plasma processing apparatus 100Gc is that the rectifying and smoothing unit 150 is arranged in the space 110a. The rectifying and smoothing unit 150 can be connected between the power receiving coil unit 140 and the RF filter 200. In addition, the RF filter 200 can be omitted. In this case, the rectifying and smoothing unit 150 is connected to the constant voltage control unit 180 without passing through the RF filter 200.

[0212] [Plasma processing apparatus including an impedance converter]

[0213] Reference Fig.42 and Fig.43 . Fig.42 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment. Fig.431 is a diagram showing an impedance converter in a plasma processing apparatus of another exemplary embodiment. The plasma processing apparatus of various exemplary embodiments that does not include the power storage unit 160 may further include an impedance converter 520. The impedance converter 520 includes an impedance conversion circuit connected between the power transmission unit 120 and the power transmission coil unit 130. The following describes the differences from the plasma processing apparatus 100Gb. Fig.42 The plasma processing apparatus 100Gf is shown.

[0214] like Fig.42 and Fig.43 As shown, the plasma processing apparatus 100Gf further includes an impedance converter 520. The impedance conversion circuit of the impedance converter 520 includes an inductor 521, a capacitor 522, and an inductor 523.

[0215] A pair of power supply lines of the impedance conversion circuit that connects the power transmission unit 120 and the power transmission coil unit 130 to each other may include the same components and have the same line length to suppress the phase difference and potential difference of the conducted noise between them. Therefore, the pair of power supply lines each include an inductor 521 and an inductor 523. That is, the inductor 521 is connected between the power transmission unit 120 and one end of the power transmission coil 131. The inductor 523 is connected between the power transmission unit 120 and the other end of the power transmission coil 131. A resonant capacitor 132a may be connected between the inductor 521 and one end of the power transmission coil 131. In addition, a resonant capacitor 132b may be connected between the inductor 523 and the other end of the power transmission coil 131. The inductor 521 and the inductor 523 may each be a coil composed of a winding using a litz wire to suppress the reduction in power supply efficiency. The inductor 521 and the inductor 523 can each be selected so as to have a withstand voltage of the sum of the transmission voltage and the conductive noise and to have an allowable current greater than the transmission current. In addition, the inductor 523 can be omitted. In this case, the other end of the power transmission coil 131 (or the resonant capacitor 132b) is connected to the power transmission unit 120 without the inductor 523.

[0216] The capacitor 522 is connected between a node on the power supply line that connects the inductor 521 and one end of the power transmission coil 131 (or the resonant capacitor 132a) to each other, and a node on the power supply line that connects the inductor 523 and the other end of the power transmission coil 131 (or the resonant capacitor 132b) to each other. The capacitor 522 can be composed of one or more capacitors. The capacitor 522 can have a capacitance selected in such a way as to form a resonant circuit together with the power transmission coil unit 130. Each of the one or more capacitors constituting the capacitor 522 can be a non-polar film capacitor or a ceramic capacitor (for example, a stacked ceramic capacitor). In addition, each of the one or more capacitors constituting the capacitor 522 can be selected in such a way that it has a withstand voltage for the sum of the transmission voltage and the conductive noise, and has an allowable current greater than the transmission current.

[0217] Since the impedance converter 520 provides a constant current source together with the power transmission unit 120, a constant current is supplied to the power transmission coil 131, and a constant voltage is supplied to the load. Therefore, according to the impedance converter 520, even in a structure that does not include the power storage unit 160, it is possible to perform constant voltage control on the load while coping with a wide range of load changes.

[0218] Below, refer to Fig.44 . Fig.44 FIG. 2 is a diagram showing a power transmission unit that can be used in a plasma processing apparatus according to various exemplary embodiments. Fig.44 As shown, the rectifying and smoothing unit 123 of the power transmission unit 120 has a diode bridge as a rectifying circuit and a smoothing circuit including a smoothing capacitor 123c. In addition, the current detector 126i may include a current transformer 126ct and a transmission current monitoring unit 126d. The transmission current monitoring unit 126d is configured to monitor the transmission current by monitoring the current output from the current transformer 126ct.

[0219] In one embodiment, the smoothing capacitor 123c may have a large capacitance to reduce the ripple of the transmission voltage and reduce the ripple of the transmission power. For example, the smoothing capacitor 123c may have a capacitance of 0.1 mF or more, 0.5 mF or more, or 1 mF or more.

[0220] Below, refer to Fig.44 and Fig.45 . Fig.45 FIG. 1 is a diagram for explaining the duty ratio adjustment of the transmission voltage of the power transmission unit which can be adopted in the plasma processing apparatus according to various exemplary embodiments. Fig.45 In FIG. 1 , the solid line, the dotted line, and the dashed line represent the waveform of the transmission voltage that can be transmitted from the power transmission unit 120. Fig.45 In the period P TFis the period of the transmission voltage, which has a time length that is the inverse of the transmission frequency, and Duty represents the duty cycle of the transmission voltage.

[0221] In one embodiment, the control unit 122 of the power transmission unit 120 can control the inverter 124 to adjust the duty ratio of the transmission voltage so that even if the output voltage of the rectifying and smoothing unit 123 contains fluctuations, the fluctuation of the transmission electric power output from the power transmission unit 120 can be reduced. Specifically, the control unit 122 adjusts the duty ratio of the transmission voltage at the peak of the fluctuation (see Fig.45 The dotted line) is set to a duty cycle of the transmission voltage when it is less than the middle value of the fluctuation (refer to Fig.45 In addition, the control unit 122 changes the duty ratio of the transmission voltage at the valley of the fluctuation (see Fig.45 The dot-dash line) is set to a duty cycle of the transmission voltage when it is greater than the middle value of the fluctuation.

[0222] Below, refer to Fig.46 . Fig.46 FIG. 1 is a diagram showing a power transmission unit and an AC / DC converter that can be used in a plasma processing apparatus according to various exemplary embodiments. Fig.46 In the embodiment shown, the power transmission unit 120 does not include the rectifying and smoothing unit 123, but includes a smoothing capacitor 123c constituting the above-mentioned smoothing circuit. That is, the power transmission unit 120 does not include the above-mentioned rectifying circuit (for example, a diode bridge). In addition, Fig.46 In the illustrated embodiment, the AC / DC converter 540 is connected between the AC power source 400 and the power transmission unit 120. The AC / DC converter 540 may be a power source equipped with a PFC (Power Factor Correction) circuit or the like. The PFC circuit can suppress the reduction in power supply efficiency. By using the AC / DC converter 540, the fluctuations in the output voltage and output electric power from the AC / DC converter 540 are reduced, so the fluctuations in the transmission voltage output from the power transmission unit 120 are reduced, and the fluctuations in the transmission electric power are reduced. In addition, since the power transmission unit 120 does not include a smoothing circuit, the power transmission unit 120 can be miniaturized.

[0223] Fig.47 FIG. 1 is a diagram showing a power receiving coil unit 140 that can be employed in plasma processing apparatuses according to various exemplary embodiments. Fig.47In the example shown, the power receiving coil unit 140 includes power receiving coils 141a and 141b. One end of the power receiving coil 141a and one end of the power receiving coil 141b are connected to the rectifying and smoothing unit 150 via a resonant capacitor 142a. The other end of the power receiving coil 141a and the other end of the power receiving coil 141b are connected to the rectifying and smoothing unit 150 via a resonant capacitor 142b. Fig.47 As shown in the example shown, two or more receiving coils may be connected in parallel in the receiving coil unit 140. This increases the allowable current of the receiving coil in the receiving coil unit 140.

[0224] Fig.48 and Fig.49 FIG. 1 is a diagram showing the structure of a power receiving coil and a power transmitting coil that can be used in a plasma processing apparatus according to various exemplary embodiments. Fig.48 and Fig.49 In the diagram, the numerical value in the units place shown in the rectangles representing the wires of the power receiving coil and the power transmitting coil respectively represents the number of turns in the coil. In addition, the numerical value in the decimal place shown in the rectangle represents that the wire of the coil is wound from the "0" position to the "5" position. Fig.48 and Fig.49 Examples of structures represented by each can be as follows Fig.47 As shown in the example shown, it is adopted in the power receiving coil unit 140 in which two power receiving coils are connected in parallel.

[0225] like Fig.48 As shown, the power receiving coil 141a and the power receiving coil 141b may be arranged so that one of the power receiving coil 141a and the power receiving coil 141b is located between the other of the power receiving coil 141a and the power receiving coil 141b and the power transmitting coil 131. The power receiving coil 141a and the power receiving coil 141b may be made of the same wire material or different wire materials. Fig.48 In the example shown, the rectifying and smoothing unit 150 is connected between the first turn arranged at the innermost side and the final turn arranged at the outermost side (e.g., the third turn) of each of the power receiving coil 141a and the power receiving coil 141b. In addition, the impedance transformer 520 is connected between the first turn arranged at the innermost side and the final turn arranged at the outermost side (e.g., the third turn) of each of the power transmitting coil 131.

[0226] like Fig.49 As shown, the multiple turns of the power receiving coil 141a and the power receiving coil 141b may be arranged in multiple layers (for example, two layers). In addition, the multiple layers of the power receiving coil 141a and the multiple layers of the power receiving coil 141b may be arranged alternately in the direction in which the multiple layers are arranged. Fig.49In the example shown, the power receiving coil 141a and the power receiving coil 141b may be made of the same wire material or different wire materials. In addition, the plurality of turns of the power transmitting coil 131 may be arranged in multiple layers (for example, two layers). Fig.49 In the example shown, the rectifying and smoothing unit 150 is connected to the first turn and the last turn (for example, the sixth turn) arranged at the innermost side of each of the power receiving coil 141a and the power receiving coil 141b. In addition, the impedance converter 520 is connected to the first turn and the last turn (the sixth turn) arranged at the innermost side of each of the power transmitting coil 131. In this case, the phase difference and the potential difference of the conductive noise propagated in the lead wires respectively drawn from the power receiving coil 141a, the power receiving coil 141b and the power transmitting coil 131 are reduced.

[0227] The following reference Fig.50 and Fig.51 . Fig.50 and Fig.51 Each of the diagrams shows the structure of a power receiving coil unit and a rectifying and smoothing unit that can be adopted in a plasma processing apparatus according to various exemplary embodiments. Fig.50 In the embodiment, the power receiving coil unit 140 includes a power receiving coil 141 . Fig.51 In the embodiment, the power receiving coil unit 140 includes a plurality of power receiving coils connected in parallel, for example, a power receiving coil 141a and a power receiving coil 141b connected in parallel.

[0228] exist Fig.50 and Fig.51 In each embodiment, the rectifying and smoothing unit 150 includes a rectifying circuit 153a and a rectifying circuit 153b similar to the rectifying circuit 153, and includes a smoothing circuit 154a and a smoothing circuit 154b similar to the smoothing circuit 154. The rectifying circuit 153a is connected to the smoothing circuit 154a, and the rectifying circuit 153b is connected to the smoothing circuit 154b. Fig.50 and Fig.51 In the rectifying and smoothing unit 150 of each embodiment, the rectifying circuit 153b and the smoothing circuit 154b are connected in parallel with the rectifying circuit 153a and the smoothing circuit 154a.

[0229] exist Fig.50 In the embodiment of the present invention, one end of the power receiving coil 141 is connected to the rectifier circuit 153a and the rectifier circuit 153b via the resonant capacitor 142a. The other end of the power receiving coil 141 is connected to the rectifier circuit 153a and the rectifier circuit 153b via the resonant capacitor 142b. Fig.51In the embodiment, one end of the receiving coil 141a and one end of the receiving coil 141b are connected to the rectifier circuit 153a and 153b via the resonant capacitor 142a. The other end of the receiving coil 141a and the other end of the receiving coil 141b are connected to the rectifier circuit 153a and 153b via the resonant capacitor 142b.

[0230] exist Fig.50 and Fig.51 In respective embodiments, the smoothing circuit 154a and the smoothing circuit 154b each include an inductor 1541a, an inductor 1541b, a capacitor 1542a, and a capacitor 1542b. The inductor 1541a is connected between one of a pair of inputs of the smoothing circuit (154a or 154b) and one of a pair of outputs of the smoothing circuit. The inductor 1541b is connected between the other of a pair of inputs of the smoothing circuit (154a or 154b) and the other of a pair of outputs of the smoothing circuit. By providing inductors in a pair of power supply lines of each of the smoothing circuit 154a and the smoothing circuit 154b, the phase difference and potential difference of the conducted noise between the pair of power supply lines can be suppressed. In addition, Fig.14 The smoothing circuit 154 shown may further include an inductor 1541 b similar to the smoothing circuits 154 a and 154 b .

[0231] exist Fig.50 and Fig.51 In each embodiment, one end of the capacitor 1542a is connected to one of a pair of inputs of the smoothing circuit (154a or 154b) and one end of the inductor 1541a. The other end of the capacitor 1542a is connected to the other of a pair of inputs of the smoothing circuit (154a or 154b) and one end of the inductor 1541b. One end of the capacitor 1542b is connected to one of a pair of outputs of the smoothing circuit (154a or 154b) and the other end of the inductor 1541a. The other end of the capacitor 1542b is connected to the other of a pair of outputs of the smoothing circuit (154a or 154b) and the other end of the inductor 1541b.

[0232] according to Fig.50 and Fig.51Each embodiment allows the current to be increased by connecting the unit including the rectifier circuit and the parallel circuit in parallel. In addition, the inductance of the inductor 1541a and the inductance of the inductor 1541b may be equal to or different from each other. In addition, the electrostatic capacitance of the capacitor 1542a of the smoothing circuit 154a, the electrostatic capacitance of the capacitor 1542b of the smoothing circuit 154a, the electrostatic capacitance of the capacitor 1542a of the smoothing circuit 154b, and the electrostatic capacitance of the capacitor 1542b of the smoothing circuit 154b may be equal to or different from each other. In addition, the smoothing circuit 154a and the smoothing circuit 154b may each not have the inductor 1541b. Alternatively, the smoothing circuit 154a may not have the inductor 1541b, and the smoothing circuit 154b may not have the inductor 1541a.

[0233] [Integrated structure related to power supply]

[0234] The following reference Figure 52 to Figure 56 . Figure 52 to Figure 56 Each of the diagrams shows an integrated structure related to power supply that can be adopted in a plasma processing apparatus according to various exemplary embodiments. Figure 52 to Figure 56 The respective structures are adopted in a plasma processing apparatus having an impedance converter 520 and an AC / DC converter 540.

[0235] exist Fig.52 In the illustrated embodiment, the power transmission coil unit 130 and the power reception coil unit 140 are integrated by being arranged in a metal casing 340g. In addition, the power transmission coil unit 130, the power reception coil unit 140 and the RF filter 200 are also integrated in the space 110a. The power transmission coil unit 130, the power reception coil unit 140 and the RF filter 200 are arranged in, for example, a metal casing 341g.

[0236] Fig.53 The embodiment shown is similar to Fig.52 The embodiment shown is different in that the resonant capacitor 132a and the resonant capacitor 132b of the power transmission coil unit 130 are integrated with the impedance converter 520. The resonant capacitor 132a and the resonant capacitor 132b can be arranged in one housing together with the impedance conversion circuit of the impedance converter 520. Fig.53 According to the embodiment, it is possible to realize miniaturization of the unit formed by integrating the power transmission coil unit 130, the power reception coil unit 140 and the RF filter 200.

[0237] Fig.54 The embodiment shown is similar to Fig.52The embodiment shown is different in that the impedance converter 520 is integrated with the power transmission unit 120. The impedance converter 520 and the power transmission unit 120 can be arranged in a housing 520g. In this embodiment, the wiring between the inverter of the power transmission unit 120 and the impedance converter 520 can be shortened. Therefore, the power supply efficiency is improved.

[0238] Fig.55 The embodiment shown is similar to Fig.52 The difference of the embodiment shown is that the resonant capacitor 132a and the resonant capacitor 132b of the power transmission coil unit 130, the impedance converter 520, and the power transmission unit 120 are integrated. The resonant capacitor 132a and the resonant capacitor 132b of the power transmission coil unit 130, the impedance converter 520, and the power transmission unit 120 can be arranged in a housing 520g. In this embodiment, it is possible to achieve miniaturization of the unit formed by integrating the power transmission coil unit 130, the power receiving coil unit 140, and the RF filter 200. In addition, in this embodiment, it is possible to shorten the wiring between the inverter of the power transmission unit 120 and the impedance converter 520. Therefore, the power supply efficiency is improved.

[0239] Fig.56 The embodiment shown is similar to Fig.52 The difference of the embodiment shown is that the resonant capacitor 132a and the resonant capacitor 132b of the power transmission coil unit 130, the impedance converter 520, the power transmission unit 120 and the AC / DC converter 540 are integrated. The resonant capacitor 132a and the resonant capacitor 132b of the power transmission coil unit 130, the impedance converter 520, the power transmission unit 120 and the AC / DC converter 540 can be arranged in a housing 520g. In this embodiment, it is possible to achieve miniaturization of the unit formed by integrating the power transmission coil unit 130, the power receiving coil unit 140 and the RF filter 200. In addition, in this embodiment, it is possible to shorten the wiring between the inverter of the power transmission unit 120 and the impedance converter 520. Therefore, the power supply efficiency is improved. In addition, the layout freedom between the AC power supply 400 and the AC / DC converter 540 is improved.

[0240] The following reference Figures 57 to 61 . Figures 57 to 61 Each of the diagrams shows an integrated structure related to power supply that can be adopted in a plasma processing apparatus according to various exemplary embodiments. Figures 57 to 61 The respective structures are employed in a plasma processing apparatus including an immittance converter 520 and an AC / DC converter 540 . Figures 57 to 61 Their respective structures and Figure 52 to Figure 56 The respective structures are different and do not include the RF filter 200. In addition, Figures 57 to 61 In each structure, the rectifying and smoothing unit 150 is disposed in the space 110 a .

[0241] exist Fig.57 In the illustrated embodiment, the power transmission coil unit 130 and the power reception coil unit 140 are integrated by being arranged in a metal casing 340g. In addition, the power transmission coil unit 130, the power reception coil unit 140, and the rectifying and smoothing unit 150 are also integrated in the space 110a. The power transmission coil unit 130, the power reception coil unit 140, and the rectifying and smoothing unit 150 are arranged in, for example, a metal casing 341g.

[0242] Fig.58 The embodiment shown is similar to Fig.57 The embodiment shown is different in that the resonant capacitor 132a and the resonant capacitor 132b of the power transmission coil unit 130 are integrated with the impedance converter 520. The resonant capacitor 132a and the resonant capacitor 132b can be arranged in one housing together with the impedance conversion circuit of the impedance converter 520. Fig.58 According to the embodiment, it is possible to realize miniaturization of the unit formed by integrating the power transmission coil unit 130, the power reception coil unit 140 and the rectifying and smoothing unit 150.

[0243] Fig.59 The embodiment shown is similar to Fig.57 The embodiment shown is different in that the impedance converter 520 is integrated with the power transmission unit 120. The impedance converter 520 and the power transmission unit 120 can be arranged in one housing 520g. In this embodiment, the wiring between the inverter of the power transmission unit 120 and the impedance converter 520 can be shortened. Therefore, the power supply efficiency is improved.

[0244] Fig.60 The embodiment shown is similar to Fig.57 The embodiment shown is different in that the resonant capacitor 132a and the resonant capacitor 132b of the power transmission coil unit 130, the impedance converter 520, and the power transmission unit 120 are integrated. The resonant capacitor 132a and the resonant capacitor 132b of the power transmission coil unit 130, the impedance converter 520, and the power transmission unit 120 can be arranged in one housing 520g. In this embodiment, it is possible to achieve miniaturization of the unit formed by integrating the power transmission coil unit 130, the power receiving coil unit 140, and the rectifying and smoothing unit 150. In addition, in this embodiment, it is possible to shorten the wiring between the inverter of the power transmission unit 120 and the impedance converter 520. Therefore, the power supply efficiency is improved.

[0245] Fig.61 The embodiment shown is similar to Fig.57The embodiment shown is different in that the resonant capacitor 132a and the resonant capacitor 132b of the power transmission coil unit 130, the impedance converter 520, the power transmission unit 120, and the AC / DC converter 540 are integrated. The resonant capacitor 132a and the resonant capacitor 132b of the power transmission coil unit 130, the impedance converter 520, the power transmission unit 120, and the AC / DC converter 540 can be arranged in one housing 520g. In this embodiment, it is possible to achieve miniaturization of the unit formed by integrating the power transmission coil unit 130, the power receiving coil unit 140, and the rectifying and smoothing unit 150. In addition, in this embodiment, the wiring between the AC / DC converter 540 and the impedance converter 520 can be shortened. Therefore, the power supply efficiency is improved. In addition, the layout freedom between the AC power supply 400 and the AC / DC converter 540 is improved.

[0246] Below, refer to Figure 62 to Figure 65 . Figure 62 to Figure 65 Each of the diagrams is a diagram showing an integrated structure related to power supply that can be adopted in a plasma processing apparatus according to various exemplary embodiments. Figure 62 to Figure 65 The respective structures are adopted in a plasma processing apparatus having an impedance converter 520 and an AC / DC converter 540.

[0247] exist Fig.62 In the illustrated embodiment, the power reception coil unit 140 and the RF filter 200 are integrated in the space 110a. The power reception coil unit 140 and the RF filter 200 are arranged in, for example, a single metal casing 140gb.

[0248] Fig.63 The embodiment shown is similar to Fig.62 The difference of the embodiment is that the power transmission coil unit 130 is integrated with the impedance converter 520. The power transmission coil unit 130 and the impedance converter 520 can be arranged in a housing 520g (for example, a metal housing) or a metal housing 130g. According to this embodiment, the wiring between the impedance converter 520 and the power transmission coil 131 can be shortened. Therefore, the power supply efficiency is improved.

[0249] Fig.64 The embodiment shown is similar to Fig.62 The difference of the embodiment is that the power transmission coil unit 130, the impedance converter 520 and the power transmission unit 120 are integrated. The power transmission coil unit 130, the impedance converter 520 and the power transmission unit 120 can be arranged in a shell 520g (for example, a metal shell) or a metal shell 130g. According to this embodiment, the wiring between the inverter of the power transmission unit 120 and the power transmission coil 131 can be shortened. Therefore, the power supply efficiency is improved.

[0250] Fig.65The embodiment shown is similar to Fig.62 The difference of the embodiment is that the power transmission coil unit 130, the impedance transformer 520, the power transmission unit 120 and the AC / DC converter 540 are integrated. The power transmission coil unit 130, the impedance transformer 520, the power transmission unit 120 and the AC / DC converter 540 can be arranged in a shell 520g (for example, a metal shell) or a metal shell 130g. According to this embodiment, the wiring between the AC / DC converter 540 and the power transmission coil 131 can be shortened. Therefore, the power supply efficiency is improved. In addition, the layout freedom between the AC power supply 400 and the AC / DC converter 540 is improved.

[0251] Various exemplary embodiments have been described above, but the present invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and changes may be made. In addition, elements in different embodiments may be combined to form other embodiments.

[0252] For example, the AC power source 400 may be a three-phase AC power source or a single-phase AC power source.

[0253] Here, various exemplary embodiments included in the present invention are described in the following [E1] to [E17].

[0254] [E1]

[0255] A plasma processing device, comprising:

[0256] a plasma processing chamber;

[0257] A substrate support portion disposed in the plasma processing chamber;

[0258] an electrode or an antenna disposed outside the plasma processing space in the plasma processing chamber, the electrode or the antenna being disposed so that the space in the plasma processing chamber is located between the electrode or the antenna and the substrate support;

[0259] A high-frequency power source electrically connected to the substrate support, the electrode or the antenna, and configured to generate high-frequency electric power;

[0260] at least one electric power consumption component disposed in the plasma processing chamber or in the substrate support;

[0261] a power receiving coil electrically connected to the at least one power consuming component;

[0262] a power transmission coil electromagnetically coupled to the power receiving coil;

[0263] a power transmission unit electrically connected to the power transmission coil to supply power to the power transmission coil; and

[0264] Control Department,

[0265] The power transmission unit includes a voltage detector and a current detector, wherein the voltage detector is configured to detect an input voltage input to the power transmission coil, and the current detector is configured to detect an input current input to the power transmission coil.

[0266] The control unit is configured to determine a required electric power level corresponding to a parameter value, and to control the power transmission unit to output output electric power having the required electric power level, wherein the parameter value includes an input impedance obtained based on the input voltage and the input current or a load resistance value of at least one of the electric power consuming components.

[0267] [E2]

[0268] A plasma processing apparatus according to E1, wherein:

[0269] The power transmission unit is configured to output electric power by outputting an output current having a transmission frequency and periodically outputting an output voltage having a peak value and a duty cycle at a time interval that is a reciprocal of the transmission frequency.

[0270] The plasma processing device also includes:

[0271] a rectifying and smoothing unit having a rectifying circuit and a smoothing circuit connected between the power receiving coil and the at least one power consuming component; and

[0272] The constant voltage control unit connected between the rectifying and smoothing unit and the at least one electric power consuming component is configured to be able to change the load resistance value of the at least one electric power consuming component.

[0273] [E3]

[0274] A plasma processing apparatus according to E2, wherein:

[0275] The control unit is configured to have a table storing the peak value and duty cycle of the output voltage and the amplitude of the output current corresponding to the parameter value in association with the parameter value, so that the power transmission unit outputs the output electric power having the peak value and duty cycle of the output voltage and the amplitude value of the output current corresponding to the parameter value.

[0276] [E4]

[0277] The plasma processing apparatus according to E2 or E3, further comprising:

[0278] Line capacitors;

[0279] Over-current power consuming loads; and

[0280] The switching element is configured to selectively connect the line capacitor between a pair of power supply lines connecting the rectifying and smoothing section and the constant voltage control section to each other, or selectively connect the line capacitor to the over-power consuming load.

[0281] [E5]

[0282] A plasma processing apparatus according to E4, wherein:

[0283] The constant voltage control unit includes a control unit configured to change a load resistance value of the at least one electric power consuming component and to control the switching element.

[0284] [E6]

[0285] A plasma processing apparatus according to E5, wherein:

[0286] The control unit of the constant voltage control unit is configured as follows:

[0287] When the load resistance value of the at least one electric power consuming component changes in a manner to become lower, the switching element can be controlled to connect the line capacitor to the pair of power supply lines,

[0288] Next, the switching element is controlled to connect the line capacitor to the over-power consuming load, so that the electric power stored in the line capacitor is discharged to the over-power consuming load.

[0289] [E7]

[0290] The plasma processing apparatus according to any one of E2 to E6, wherein:

[0291] It also includes an impedance converter, which includes an impedance conversion circuit connected between the power transmission unit and the power transmission coil.

[0292] [E8]

[0293] A plasma processing apparatus according to E7, wherein:

[0294] The above-mentioned immittance conversion circuit comprises:

[0295] an inductor connected between the power transmission unit and the power transmission coil; and

[0296] A capacitor is connected between a pair of power supply lines connecting the power transmission unit and the power transmission coil.

[0297] [E9]

[0298] A plasma processing apparatus according to E8, wherein:

[0299] The above-mentioned power transmission unit includes:

[0300] A rectifying and smoothing unit, comprising a rectifying circuit and a smoothing capacitor connected between the power transmission coil and the rectifying circuit;

[0301] an inverter connected between the power transmission coil and the rectifying and smoothing section of the power transmission section;

[0302] a voltage monitoring unit configured to monitor a waveform of a voltage output from the rectifying and smoothing unit of the power transmission unit; and

[0303] Control Department,

[0304] The control unit is configured to adjust the duty ratio of the output voltage output from the inverter based on the waveform monitored by the voltage monitoring unit so as to suppress fluctuations in the output electric power.

[0305] [E10]

[0306] A plasma processing apparatus according to E8, wherein:

[0307] Also includes AC / DC converter,

[0308] The above-mentioned power transmission unit includes:

[0309] a smoothing unit including a smoothing capacitor and connected to the AC / DC converter;

[0310] an inverter connected between the power transmission coil and the smoothing portion of the power transmission portion;

[0311] a voltage monitoring unit configured to monitor a waveform of a voltage output from the smoothing unit of the power transmission unit; and

[0312] Control Department,

[0313] The control unit is configured to adjust the duty ratio of the output voltage output from the inverter based on the waveform monitored by the voltage monitoring unit so as to suppress fluctuations in the output electric power.

[0314] [E11]

[0315] A plasma processing apparatus according to any one of E7 to E10, wherein:

[0316] It also includes a resonant capacitor connected between the power transmission coil and the impedance conversion circuit.

[0317] The resonant capacitor is disposed in the immittance converter.

[0318] [E12]

[0319] A plasma processing apparatus according to any one of E7 to E10, wherein:

[0320] The above-mentioned immittance transformer and the above-mentioned power transmission unit are accommodated in one casing.

[0321] [E13]

[0322] A plasma processing apparatus according to any one of E7 to E10, wherein:

[0323] It also includes a resonant capacitor connected between the power transmission coil and the impedance conversion circuit.

[0324] The resonant capacitor, the immittance transformer, and the power transmission unit are accommodated in one casing.

[0325] [E14]

[0326] A plasma processing apparatus according to any one of E7 to E10, wherein:

[0327] The invention comprises a power transmission coil unit, wherein the power transmission coil unit includes the power transmission coil and a resonance capacitor connected between the power transmission coil and the impedance conversion circuit.

[0328] The power transmission coil unit and the impedance transformer are accommodated in one casing.

[0329] [E15]

[0330] A plasma processing apparatus according to any one of E7 to E10, wherein:

[0331] The invention comprises a power transmission coil unit, wherein the power transmission coil unit includes the power transmission coil and a resonance capacitor connected between the power transmission coil and the impedance conversion circuit.

[0332] The power transmission coil unit, the impedance transformer, and the power transmission unit are accommodated in one casing.

[0333] [E16]

[0334] A plasma processing apparatus according to E10, wherein:

[0335] It also includes a resonant capacitor connected between the power transmission coil and the impedance conversion circuit.

[0336] The resonant capacitor, the AC / DC converter, the immittance transformer, and the power transmission unit are accommodated in one casing.

[0337] [E17]

[0338] A plasma processing apparatus according to E10, wherein:

[0339] The invention comprises a power transmission coil unit, wherein the power transmission coil unit includes the power transmission coil and a resonance capacitor connected between the power transmission coil and the impedance conversion circuit.

[0340] The power transmission coil unit, the AC / DC converter, the immittance transformer, and the power transmission unit are accommodated in one casing.

[0341] It can be seen from the above description that various embodiments of the present invention are described in this specification for illustrative purposes, and various changes can be made without departing from the scope and spirit of the present invention. Therefore, the various embodiments disclosed in this specification are not intended to be limiting, and the true scope and spirit are given by the scope of the invention.

[0342] Description of Reference Numerals

[0343] 1 ... plasma processing device, 10 ... chamber, 11 ... substrate supporting portion, 110 ... ground frame, 120 ... power transmission portion, 130 ... power transmission coil portion, 131 ... power transmission coil, 140 ... power receiving coil portion, 141 ... power receiving coil, 150 ... rectifying and smoothing portion, 180 ... constant voltage control portion, 240 ... electric power consumption component, 300 ... high frequency power supply.

Claims

1. A plasma processing device, characterized in that: include: a plasma processing chamber; a substrate support disposed in the plasma processing chamber; an electrode or an antenna disposed outside the plasma processing space in the plasma processing chamber, the electrode or the antenna being disposed so that the space in the plasma processing chamber is located between the electrode or the antenna and the substrate support; A high-frequency power source electrically connected to the substrate support, the electrode or the antenna, and configured to generate high-frequency electric power; at least one electrical power consumption component disposed within the plasma processing chamber or within the substrate support; a power receiving coil electrically connected to the at least one electric power consuming component; a power transmission coil electromagnetically coupled to the power receiving coil; a power transmission unit electrically connected to the power transmission coil to supply electric power to the power transmission coil; and Control Department, The power transmission unit includes a voltage detector and a current detector, wherein the voltage detector is configured to detect an input voltage input to the power transmission coil, and the current detector is configured to detect an input current input to the power transmission coil. The control unit is configured to determine a required electric power level corresponding to a parameter value, and to control the power transmission unit to output output electric power having the required electric power level, wherein the parameter value includes an input impedance obtained based on the input voltage and the input current or a load resistance value of the at least one electric power consuming component.

2. The plasma processing device according to claim 1, characterized in that: The power transmission unit is configured to output electric power by outputting an output current having a transmission frequency and periodically outputting an output voltage having a peak value and a duty cycle at a time interval that is a reciprocal of the transmission frequency. The plasma processing device also includes: a rectifying and smoothing unit having a rectifying circuit and a smoothing circuit connected between the power receiving coil and the at least one electric power consuming component; and The constant voltage control unit connected between the rectifying and smoothing unit and the at least one electric power consuming component is configured to be able to change the load resistance value of the at least one electric power consuming component.

3. The plasma processing device according to claim 2, characterized in that: The control unit is configured to have a table storing the peak value and duty cycle of the output voltage and the amplitude of the output current corresponding to the parameter value in association with the parameter value, so that the power transmission unit outputs the output electric power having the peak value and duty cycle of the output voltage and the amplitude value of the output current corresponding to the parameter value.

4. The plasma processing device according to claim 2, characterized in that: Also includes: Line capacitors; Over-current power consumption load; and The switching element is configured to selectively connect the line capacitor between a pair of power supply lines connecting the rectifying and smoothing unit and the constant voltage control unit to each other, or selectively connect the line capacitor to the over-power consuming load.

5. The plasma processing device according to claim 4, characterized in that: The constant voltage control unit includes a control unit configured to change a load resistance value of the at least one electric power consuming component and control the switching element.

6. The plasma processing device according to claim 5, characterized in that: The control unit of the constant voltage control unit is configured as follows: When the load resistance value of the at least one electric power consuming component changes in a manner to become lower, the switching element can be controlled to connect the line capacitor to the pair of power supply lines, Next, the switching element is controlled to connect the line capacitor to the over-power consuming load, so that the electric power stored in the line capacitor is discharged to the over-power consuming load.

7. The plasma processing device according to any one of claims 2 to 6, characterized in that: The device further includes an impedance converter including an impedance conversion circuit connected between the power transmission unit and the power transmission coil.

8. The plasma processing device according to claim 7, characterized in that: The immittance conversion circuit comprises: an inductor connected between the power transmission unit and the power transmission coil; and A capacitor is connected between a pair of power supply lines connecting the power transmission unit and the power transmission coil.

9. The plasma processing device according to claim 8, characterized in that: The power transmission unit comprises: a rectifying and smoothing unit, comprising a rectifying circuit and a smoothing capacitor connected between the power transmission coil and the rectifying circuit; an inverter connected between the power transmission coil and the rectifying and smoothing unit of the power transmission unit; a voltage monitoring unit configured to monitor a waveform of a voltage output from the rectifying and smoothing unit of the power transmitting unit; and Control Department, The control unit is configured to be able to adjust the duty ratio of the output voltage output from the inverter based on the waveform monitored by the voltage monitoring unit so as to suppress fluctuations in the output electric power.

10. The plasma processing device according to claim 8, characterized in that: Also includes AC / DC converter, The power transmission unit comprises: a smoothing unit including a smoothing capacitor connected to the AC / DC converter; an inverter connected between the power transmission coil and the smoothing unit of the power transmission unit; a voltage monitoring unit configured to monitor a waveform of a voltage output from the smoothing unit of the power transmission unit; and Control Department, The control unit is configured to be able to adjust the duty ratio of the output voltage output from the inverter based on the waveform monitored by the voltage monitoring unit so as to suppress fluctuations in the output electric power.

11. The plasma processing device according to claim 7, characterized in that: It also includes a resonant capacitor connected between the power transmission coil and the impedance conversion circuit, The resonant capacitor is arranged in the immittance converter.

12. The plasma processing device according to claim 7, characterized in that: The immittance transformer and the power transmission unit are accommodated in one casing.

13. The plasma processing device according to claim 7, characterized in that: It also includes a resonant capacitor connected between the power transmission coil and the impedance conversion circuit, The resonant capacitor, the immittance transformer, and the power transmission unit are accommodated in one casing.

14. The plasma processing device according to claim 7, characterized in that: The invention comprises a power transmission coil unit, wherein the power transmission coil unit includes the power transmission coil and a resonance capacitor connected between the power transmission coil and the impedance conversion circuit. The power transmission coil unit and the impedance transformer are accommodated in one casing.

15. The plasma processing device according to claim 7, characterized in that: The invention comprises a power transmission coil unit, wherein the power transmission coil unit includes the power transmission coil and a resonance capacitor connected between the power transmission coil and the impedance conversion circuit. The power transmission coil unit, the impedance transformer, and the power transmission unit are accommodated in one casing.

16. The plasma processing device according to claim 10, characterized in that: It also includes a resonant capacitor connected between the power transmission coil and the impedance conversion circuit, The resonant capacitor, the AC / DC converter, the immittance transformer, and the power transmission unit are accommodated in one casing.

17. The plasma processing device according to claim 10, characterized in that: The invention comprises a power transmission coil unit, wherein the power transmission coil unit includes the power transmission coil and a resonance capacitor connected between the power transmission coil and the impedance conversion circuit. The power transmission coil unit, the AC / DC converter, the immittance transformer, and the power transmission unit are accommodated in one casing.

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