Method for operating grinding system

Abstract

Embodiments of the present disclosure describe a method for operating a polishing system including determining a profile of one or more regions of a polishing pad of the polishing system during a polishing process. The contour is compared with a reference contour, the reference contour is a simulated contour of the polishing pad, and the comparison of the contour and the reference contour comprises comparison of the contour and the simulated contour generated through a mathematical process, a machine learning process, a big data mining process or a neural network process. One or more parameters of the grinding process are adjusted based on the comparison.

Description

[0001] This application is a divisional application of a patent application with an application date of October 25, 2019, application number 201911021329.5, and invention name “Apparatus for polishing a substrate, a method for operating a polishing system, and a polishing system for a polishing process”. Technical Field

[0002] The present disclosure relates to a method for operating a grinding system. Background Art

[0003] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design have produced several generations of ICs, each with smaller and more complex circuits than the previous generation. However, these advances have increased the complexity of processing and manufacturing ICs, and in order to achieve these advances, similar developments in IC processing and manufacturing are needed. During the course of IC evolution, functional density (i.e., the number of interconnected elements per unit chip area) has generally increased, while geometric size (i.e., the smallest component (or wiring) that can be produced using a manufacturing process) has decreased. This shrinking process generally provides benefits by increasing production efficiency and reducing associated costs.

[0004] A manufacturing process used to planarize the layers of an IC is chemical mechanical polishing (CMP). The CMP process combines chemical removal with mechanical polishing. The CMP process polishes and removes material from a wafer and can be used to planarize multiple material surfaces. Additionally, the CMP process does not use hazardous gases and can be a low-cost process. Summary of the invention

[0005] Embodiments of the present disclosure provide a method for operating a polishing system, comprising determining a profile of one or more regions of a polishing pad of the polishing system during a polishing process, comparing the profile to a reference profile, wherein the reference profile is a simulated profile of the polishing pad, wherein comparing the profile to the reference profile comprises comparing the profile to a simulated profile generated by a mathematical process, a machine learning process, a big data mining process, or a neural network process, and adjusting one or more parameters of the polishing process based on the comparison.

[0006] Embodiments of the present disclosure provide a method for operating a polishing system, comprising scanning a surface of a polishing pad to determine a surface profile of the polishing pad, performing a comparison between the surface profile and a reference profile, determining based on the comparison that an area of ​​the surface of the polishing pad is heavily worn, and adjusting a position of a wafer being polished on the polishing pad by moving the wafer away from the area.

[0007] Embodiments of the present disclosure provide a method for operating a grinding system, including performing a grinding process on a wafer by pressing the wafer against a surface of a grinding pad and rotating the wafer. While grinding the wafer, measuring a surface profile of the grinding pad. Applying slurry on the grinding pad. Determining a condition of the surface of the grinding pad. Adjusting a location on the grinding pad for applying slurry based on the condition of the grinding pad. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] The aspects of the present disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawings. According to common industrial practice, various features are not drawn to scale. In fact, the size of various features may be arbitrarily increased or decreased for clarity of illustration and discussion.

[0009] Figure 1 A schematic diagram of a polishing system according to some embodiments of the present disclosure is shown;

[0010] Figure 2 A schematic diagram of a grinding apparatus according to some embodiments of the present disclosure is shown;

[0011] Figure 3 A cross-sectional view showing a region of a detection module and a polishing pad according to some embodiments of the present disclosure;

[0012] FIG. 4A to FIG. 4C Various detection modules according to some embodiments of the present disclosure are illustrated;

[0013] Figure 5 A schematic diagram of a grinding apparatus according to some embodiments of the present disclosure is shown;

[0014] Figure 6 A schematic diagram of a grinding apparatus according to some embodiments of the present disclosure is shown;

[0015] Figure 7 A method for operating a grinding system according to some embodiments of the present disclosure is shown;

[0016] Figure 8 A generalized block diagram of an example computer system is shown in accordance with some embodiments of the present disclosure.

[0017]

Explanation of symbols

[0018] 100 Grinding System

[0019] 110 Grinding equipment

[0020] 120 Communication Link

[0021] 130 Computer Systems

[0022] 200 Grinding equipment

[0023] 210 substrate carrier

[0024] 220 Platform

[0025] 230 Semiconductor substrate

[0026] 250 Slurry dispenser

[0027] 260 Detection Module

[0028] 261 Probe

[0029] 263 Beam

[0030] 270 Pad Adjuster

[0031] 280 Adjustment disk

[0032] 290 Abrasive Pad

[0033] 300 Local Area

[0034] 302 Top surface

[0035] 304 bottom surface

[0036] 410 Contact Detection Module

[0037] 411 Contact Probe

[0038] 412 Probe Track

[0039] 414 Pressure Probe

[0040] 416 Limit switch

[0041] 418 Mobile Mechanism

[0042] 420 Non-contact detection module

[0043] 421 Optical Module

[0044] 422 Optical Transmitter

[0045] 423 Optical Signal

[0046] 424 Optical Receiver

[0047] 425 Optical Signal

[0048] 430 Detection Module

[0049] 431 Sound Wave Module

[0050] 432 Sonic Emitter

[0051] 433 Sound Wave Signal

[0052] 434 Acoustic Receiver

[0053] 435 Sound Signal

[0054] 500 Grinding Equipment

[0055] 600 Grinding Equipment

[0056] 660 independent detection module

[0057] 662 Base

[0058] 700 Methods

[0059] 710 Operation

[0060] 720 Operations

[0061] 730 Operation

[0062] 800 Example Computer System

[0063] 802 Display Interface

[0064] 803 Input and output devices

[0065] 804 processor

[0066] 806 Communications Infrastructure

[0067] 808 Main Memory

[0068] 810 Secondary Memory

[0069] 812 Hard Drive

[0070] 814 Removable storage drive

[0071] 818 Removable storage unit

[0072] 820 interface

[0073] 822 Removable storage unit

[0074] 824 Communication Interface

[0075] 826 Communication Path

[0076] 828 Components DETAILED DESCRIPTION

[0077] The following disclosure provides many different embodiments or examples for implementing the different features of the provided subject matter. The following describes specific examples of components and arrangements to simplify the embodiments of the present disclosure. Of course, these are only examples and are not intended to be restrictive. For example, in the following description, a first feature is formed on or on a second feature and may include an embodiment in which the first feature and the second feature are directly contacted, and may also include an embodiment in which an additional feature can be placed between the first feature and the second feature so that the first feature and the second feature are not directly in contact. In addition, the embodiments of the present disclosure may repeat element symbols and / or letters in various examples. This repetition itself does not represent the relationship between the various embodiments and / or configurations discussed.

[0078] Additionally, for simplicity of description, spatially relative terms such as "below," "below," "lower," "above," "upper," and the like may be used herein to describe the relationship of one component or feature to another (other) component or feature as depicted in the figures. The spatially relative terms are intended to encompass different orientations of the elements in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.

[0079] As used herein, the term "nominal" refers to an expected or target value for a characteristic or parameter of a component or process operation set during the design phase of a product or process, as well as a range of values ​​above and / or below the expected value. The range of values ​​may be due to minor variations in the manufacturing process or tolerances.

[0080] As used herein, the term "vertical" means nominally perpendicular to level ground.

[0081] As used herein, the term "substantially" indicates a value of a given amount that may vary based on a particular technology node associated with the subject semiconductor element. In some embodiments, based on a particular technology node, the term "substantially" may indicate a value of a given amount that varies within (e.g.) ±5% of a target (or expected) value.

[0082] As used herein, the term "approximately" indicates a value of a given quantity that may vary based on a particular technology node associated with the subject semiconductor device. In some embodiments, based on the particular technology node, the term "approximately" may indicate a value of a given quantity that varies within, for example, 5% to 30% of the value of the given quantity (e.g., ±5%, ±10%, ±20%, or ±30% of the value).

[0083] The CMP process involves placing the substrate in an inverted position in a substrate carrier, where the surface will be polished facing the polishing pad. The substrate carrier and substrate rotate as downward pressure is applied to the substrate against the polishing pad. A chemical solution called "CMP slurry" is deposited on the surface of the polishing pad to assist in the planarization process. Thus, mechanical (polishing) forces and chemical (CMP slurry) forces can be used to planarize the surface of the substrate.

[0084] As part of the CMP process, a pad conditioner may be used to condition the polishing pad. The pad conditioner may include a conditioning disk having a rough surface. The conditioning disk may be attached to a conditioning arm via a set of screws. The conditioning process may roughen and texture the surface of the polishing pad to provide a rougher surface for better slurry distribution and polishing. The conditioning process may also remove accumulated debris buildup and excess slurry from the polishing pad.

[0085] The CMP process thins and wears the polishing pad. Polishing pad wear can include thickness variations along the surface of the polishing pad, where one or more localized areas of the polishing pad can show aggressive thickness loss. These localized thickness losses can be mechanical stress weaknesses and can cause polishing pad failure. In addition, polishing pad thickness variations can also affect the yield and reliability of the CMP process.

[0086] Embodiments of the present disclosure are directed to apparatus and methods for a CMP process that uses a detection module to measure the thickness of one or more regions of a polishing pad during the CMP process. One or more parameters of the CMP process are adjusted based on the measurement. These CMP apparatus embodiments can reduce polishing pad wear, thereby preventing CMP process failures and improving substrate yields.

[0087] Figure 1 FIG. 1 is a schematic diagram of a grinding system 100 for a grinding process according to some embodiments of the present disclosure. Figure 1 As shown in FIG. 1 , the polishing system 100 may include a polishing apparatus 110, a communication link 120, and a computer system 130, wherein the polishing apparatus 110 and the computer system 130 may be configured to communicate with each other via the communication link 120. The polishing apparatus 110 may be configured to perform a polishing process based on instructions received from the computer system 130. The polishing apparatus 110 may include a polishing pad ( Figure 1 ) and a detection module (not shown) configured to detect the profile of the polishing pad during the polishing process Figure 1The polishing apparatus 110 may be configured to detect the profile of the polishing pad 110 and / or the polishing pad 110. ...

[0088] The computer system 130 may be configured to store grinding process instructions, which may include one or more grinding process parameters. The computer system 130 may be further configured to send the instructions to the grinding apparatus 110 via the communication link 120. The computer system 130 may receive data of the detected profile from the grinding apparatus 110 and may be configured to generate adjustments to one or more parameters of the grinding process. The computer system 130 may be further configured to update the instructions based on the adjustments.

[0089] Figure 2 A schematic diagram of a polishing apparatus 200 according to some embodiments of the present disclosure is depicted. The polishing apparatus 200 may include a substrate carrier 210, a polishing pad 290, a platform 220 configured to support and rotate the polishing pad 290, a slurry dispenser 250 positioned above the polishing pad 290, a pad conditioner 270 positioned above the polishing pad 290, and a detection module 260 attached to the slurry dispenser 250. The substrate carrier 210 may be configured to hold and rotate a semiconductor substrate 230. The polishing pad 290 may be configured to polish the semiconductor substrate 230. In some embodiments, one or both of the polishing pad 290 and the substrate carrier 210 rotate during the polishing process. The slurry dispenser 250 may be configured to transfer and dispense the slurry onto the polishing pad 290. In some embodiments, the slurry may be a CMP slurry. The pad conditioner 270 may be configured to condition the polishing pad 290 (e.g., to roughen and texture the surface of the polishing pad 290). The detection module 260 may be configured to detect a profile of the polishing pad 290. In some embodiments, the detection module 260 may be configured to detect a profile of one or more regions of the polishing pad 290, wherein the profile may include thickness, surface roughness, or surface contours of one or more regions of the polishing pad 290.

[0090] In some embodiments, the polishing apparatus 200 may be a CMP apparatus. The polishing process may be a CMP process. In some embodiments, the polishing process may include a substrate polishing process or a conditioning process.

[0091] The substrate carrier 210 may be configured to hold and rotate the semiconductor substrate 230. The semiconductor substrate 230 may be mounted in an inverted position so that the surface faces the polishing pad 290 to be polished. A vacuum may be applied to hold the semiconductor substrate 230 on the substrate carrier 210. The substrate carrier 210 may bring the semiconductor substrate 230 into contact with the rotating polishing pad 290, thereby polishing the surface of the semiconductor substrate 230. In some embodiments, the substrate carrier 210 may further include a rotatable shaft ( Figure 2 ) to rotate the semiconductor substrate 230.

[0092] The substrate carrier 210 may include a holding ring to hold the semiconductor substrate 230 at a predetermined position and prevent the semiconductor substrate 230 from being separated from the substrate carrier 210. The holding ring may be used to reduce lateral movement of the semiconductor substrate 230 during the grinding process. In some embodiments, suitable materials for the holding ring may include, but are not limited to, polyvinyl alcohol (PV), polyvinyl chloride (PVC), polyurethane (PU), polyethylene terephthalate (PET), polyethylene (PE), polystyrene (PS), polypropylene (PP), polycarbonate (PC), or a combination thereof. In some embodiments, the holding ring is made of a non-porous material. In some embodiments, the holding ring is made of a porous material. In some embodiments, the pore size in the holding ring ranges from about 0.5 μm to about 100 μm. In some embodiments, the porosity of the holding ring is equal to or less than about 70%. In some embodiments, the compressibility of the holding ring ranges from about 1% to about 50%.

[0093] In some embodiments, the semiconductor substrate 230 includes a semiconductor body, and an overlying dielectric material layer (e.g., oxide) and an overlying metal layer. In some embodiments, the semiconductor body may include, but is not limited to, silicon, germanium, or a III-V semiconductor material (e.g., a combination of one or more III-group elements and one or more V-group elements). The dielectric material layer and the metal layer may share a common interface facing the rotating polishing pad 290. In some embodiments, the metal layer may include, but is not limited to, germanium, copper, or aluminum. In some embodiments, the dielectric material layer may include, but is not limited to, silicon dioxide. In some embodiments, the semiconductor substrate 230 may be a wafer (e.g., a silicon wafer). In some embodiments, the semiconductor substrate 230 may be: (i) a pure element semiconductor including silicon and / or germanium; (ii) a compound semiconductor including silicon carbide (SiC), gallium arsenide (GaAs), gallium phosphide (GaP), indium phosphide (InP), indium arsenide (InAs), gallium arsenide phosphide (GaAsP), aluminum indium arsenide (AlInAs), aluminum gallium arsenide (AlGaAs), gallium indium arsenide (GaInAs), gallium indium phosphide (GaInP), gallium indium phosphide (GaInAsP), and indium antimonide (InSb); (iii) an alloy semiconductor including silicon germanium (SiGe); or (iv) a combination thereof. In some embodiments, the semiconductor substrate 230 may be a semiconductor on insulator (SOI). In some embodiments, the semiconductor substrate 230 may be an epitaxial material.

[0094] The polishing pad 290 may be configured to polish the semiconductor substrate 230. In some embodiments, the polishing pad 290 is located on the top surface of the platform 220, and the platform 220 allows the polishing pad 290 to rotate around the rotation axis during the polishing process. The polishing pad 290 may be mounted on the platform 220 by an adhesive. During the polishing process, the polishing pad 290 may be pressed with a certain pressure and brought into contact with the surface of the semiconductor substrate 230. In some embodiments, the polishing pad 290 may be several times the diameter of the semiconductor substrate 230, and the semiconductor substrate 230 may be kept offset from the center of the polishing pad 290 during the polishing process to prevent a non-planar surface from being polished onto the semiconductor substrate 230.

[0095] The polishing pad 290 may be a plate having a predetermined thickness, roughness (e.g., pore size), surface contours, hardness, gravity, and / or pad compressibility. In some embodiments, the polishing pad 290 may be a circular plate. The polishing pad 290 may be a hard, incompressible polishing pad, or a soft polishing pad, depending on the surface to be polished. For example, a hard and stiff polishing pad may be used for oxide polishing to achieve flatness. In some embodiments, the hard polishing pad material may include, but is not limited to, polyurethane, urethane, polymer, filler material, or a combination thereof. Softer polishing pads may be used for other polishing processes (e.g., for copper and polysilicon polishing) to achieve improved uniformity and smooth surfaces. Soft polishing pad materials may include, but are not limited to, polyurethane impregnated felt or felt. Hard polishing pads and soft polishing pads may also be combined in a stacked pad arrangement for custom applications. In some embodiments, the polishing pad 290 may include a porous polymer material, wherein the pore size is between about 30 μm and about 50 μm.

[0096] The pad compressibility can specify how the polishing pad 290 conforms to the semiconductor substrate 230 undergoing polishing. In order to obtain a uniform polishing rate on the surface of the semiconductor substrate 230, the polishing pad 290 should conform to the surface of the semiconductor substrate 230 over a long distance range. In some embodiments, the long distance range can vary between about 30 cm and about 50 cm. In some embodiments, a relatively high compressibility polishing pad material can have a compressibility between about 2 and about 50.

[0097] In some embodiments, the polishing pad 290 may further include surface grooves ( Figure 2 ), to promote uniform distribution of the slurry solution and to help capture unwanted particles formed by coagulated slurry solution or any other foreign particles that land on the polishing pad 290 during the polishing process.

[0098] The polishing process consumes the polishing pad 290 and thus causes wear on the polishing pad 290. The detection module 260 may be configured to detect the profile of the polishing pad 290 to estimate the amount of wear on the polishing pad 290. The detection module 260 may include a probe 261 configured to measure the profile, which may include information of one or more regions of the polishing pad 290 - such as thickness, surface roughness, and / or surface contours. The detection module 260 may also include a beam 263 configured to support the probe 261, wherein the probe 261 may be configured to move along the beam 263. Because the detection module 260 may be attached to the slurry dispenser 250, the probe 261 may extend over the surface of the polishing pad 290 and sweep over the surface of the polishing pad 290. In some embodiments, the beam 263 may be configured to extend over the polishing pad 290 and sweep over the surface of the polishing pad 290.

[0099] The platform 220 can be configured to support and rotate the polishing pad 290. In some embodiments, the platform 220 can receive a polishing pad 290 from a base disposed on the bottom. Figure 2 The motor (not shown) Figure 2 The platform 220 can thus rotate about an imaginary rotation axis perpendicular to the top surface of the platform 220. In some embodiments, the platform 220 rotates the polishing pad 290 in a clockwise direction. In some embodiments, the platform 220 rotates the polishing pad 290 in a counterclockwise direction. The substrate carrier 210 and the polishing pad 290 can be independently rotated in the same direction or in different directions at the same or different rotation speeds.

[0100] The slurry dispenser 250 can be configured to transfer the slurry and dispense the slurry onto the polishing pad 290. The composition of the slurry depends on the type of material on the surface of the semiconductor substrate undergoing the polishing process. In some embodiments, the slurry can include a first reactant, an abrasive, a first surfactant, and a solvent.

[0101] The first reactant may be a chemical substance such as an oxidant that reacts with the material (e.g., conductive material) of the semiconductor substrate 230 to assist the polishing pad 290 in polishing away the material. In some embodiments where the material on the surface of the semiconductor substrate 230 is tungsten, the first reactant may include, but is not limited to, hydrogen peroxide, hydroxylamine, periodic acid, ammonium persulfate, other periodates, iodates, mononitrogen peroxide, sulfates, peroxymonosulfuric acid, perborates, malonamide, or combinations thereof. In embodiments where the material on the surface of the semiconductor substrate is an oxide, the first reactant may include a nitric acid (HNO3) reactant.

[0102] The abrasive may be any suitable particle that, in conjunction with the polishing pad 290, assists in planarizing the semiconductor substrate 230. In some embodiments, the abrasive may be colloidal silica (e.g., silicon oxide) or fumed silica. Any other suitable abrasive may be used, such as aluminum oxide, cerium oxide, polycrystalline diamond, polymer particles such as polymethacrylate or polymethacrylic acid, or combinations thereof. In some embodiments, the slurry may be abrasive-free (i.e., the slurry does not include abrasive particles).

[0103] The first surfactant may be used to reduce the surface tension of the slurry, and to dispense the first reactant and the abrasive into the slurry, and also to prevent or reduce agglomeration of the abrasive during the polishing process. In some embodiments, the first surfactant may include, but is not limited to, sodium salt of polyacrylic acid, potassium oleate, sulfosuccinate, sulfosuccinate derivatives, sulfonated amines, sulfonated amides, alcohol sulfates, alkyl aryl sulfonates, carboxylated alcohols, alkyl aminopropionic acid, alkyl iminodipropionic acid, potassium oleate, sulfosuccinate, sulfosuccinate derivatives, alcohol sulfates, alkyl sulfonates, carboxylated alcohols, sulfonated amines, sulfonated amides, alkyl aminopropionic acid, alkyl iminodipropionic acid, or a combination thereof.

[0104] A solvent may be used to combine the first reactant, the abrasive, and the first surfactant, and the mixture is allowed to migrate and be dispensed onto the polishing pad 290. In some embodiments, the solvent may be deionized water, ethanol, or a combination thereof.

[0105] According to some embodiments of the present disclosure, the pad conditioner 270 may include an adjustment disk 280 mounted on an adjustment arm via a screw. In some embodiments, the adjustment arm may extend over the top of the polishing pad 280 to sweep across the surface of the polishing pad 290 (e.g., in an arcuate motion). As the platform 220 rotates, different areas of the polishing pad 290 may be fed under the substrate carrier 210 and used to polish the substrate. In some embodiments, the platform 220 moves the areas of the polishing pad 290 that were previously in contact with the semiconductor substrate 230 to the pad conditioner 270. The adjustment arm sweeps the pad conditioner 270 over the areas that were previously used to polish the semiconductor substrate 230 and adjusts these areas. The platform 220 then moves these areas back under the substrate carrier 210 and the semiconductor substrate 230. In this way, the polishing pad 290 may be adjusted while the semiconductor substrate 230 is being polished - for example, simultaneously.

[0106] The conditioning disk 280 may have different compositions. In some embodiments, the conditioning disk 280 may include a brazing grid type conditioning disk, a diamond grid type conditioning disk, or a combination thereof. A brazing grid type conditioning disk may be formed by embedding or encapsulating diamond particles on the surface of a stainless steel substrate at random spacings. A diamond grid type conditioning disk may be formed by embedding cutting diamonds in a nickel film coated on the surface of a stainless steel substrate at regular spacings. Diamond is coated with a diamond-like carbon (DLC) layer. The conditioning disk 280 may be used to roughen and condition the surface of the polishing pad 290. Due to the conditioning of the conditioning disk 280, the surface of the polishing pad 290 is renewed and the polishing rate may be maintained. The pad conditioning process may be performed during the grinding process (i.e., referred to as concurrent conditioning) or after the grinding process.

[0107] According to some embodiments, Figure 3is a cross-sectional view of a local area 300 of the polishing pad 290 below the detection module 260. The local pad area 300 may be a result of a conditioning process performed by the conditioner 270, which applies a downward force to the top surface 302 of the polishing pad 290. The local pad area 300 may also be another result of a substrate polishing process performed by the substrate carrier 210, which holds the substrate 230 and applies another downward force to the top surface 302 of the polishing pad 290. Therefore, the top surface 302 of the local pad area 300 develops a local topography (e.g., local non-uniformity) over time, characterized by features with different thicknesses T1 and T2 on the pad area 300, where T2 is thicker than T1 (e.g., T2>T1). In some embodiments, the difference in thickness between the thick (e.g., T2) features and the thin (e.g., T1) features on the top surface 302 may be as high as 1 mm (e.g., T2−T1≤1 mm). If the aforementioned conditioning process or substrate polishing process continues to process the pad region 300, the topography of the pad region 300 will become more pronounced. For example, the thickness difference between the thick features and the thin features having thicknesses T1 and T2, respectively, will increase, and the uniformity of the pad 300 will further deteriorate. As a result of this process, the polishing pad 290 will lose its polishing ability.

[0108] During the conditioning process and / or the substrate polishing process, the profile of the pad region 300 may be detected by the detection module 260. For example, the probe 261 may measure a distance T3 between the probe 261 and a thick feature on the top surface 302. By subtracting the distance T3 from the previously known distance T4 between the probe 261 and the bottom surface 304 of the polishing pad 290, the detection module 260 may measure the thickness T2 of the thick feature on the pad region 300 (T2=T4-T3). By moving the probe 261 along the beam 263, the thickness of the entire pad region 300 may be measured and collected by the detection module 260. In some embodiments, the detection module 260 may detect the surface contour of the pad region 300 by measuring the distance between each feature and the probe 261 (e.g., only measuring T3 without comparing with T4). In some embodiments, the detection module 260 may detect the surface roughness of the pad region 300, wherein the probe 261 may be configured to measure the surface roughness of the pad region 300. In some embodiments, the detection module 260 may reconstruct the surface morphology of the pad region 300, wherein the probe 261 may be configured to record a visual image of the surface of the pad region 300, or detect optical features associated with the pad region 300 (e.g., optical phase interference or polarization).

[0109] FIG. 4A to FIG. 4C Various types of detection modules are shown according to some embodiments of the present disclosure. Unless otherwise specified, the discussion of detection module 260 applies to FIG. 4A to FIG. 4C Each detection module shown in FIG.

[0110] Figure 4A A contact-type detection module 410 is shown according to some embodiments of the present disclosure. As an embodiment of the probe 261, the detection module 410 may include a contact probe 411, wherein the contact probe 411 may be configured to sense a mechanical signal. In some embodiments, the mechanical signal may include a mechanical pressure signal associated with measuring a profile of one or more regions of the polishing pad 290. The contact probe 411 may include a probe track 412; a pressure probe 414, which is configured to sense a mechanical pressure between the pressure probe 414 and the top surface 302 of the polishing pad 290; a limit switch 416, which is configured to determine an upper limit of a position of the pressure probe 414; and a moving mechanism 418, which is configured to move the pressure probe 414 along the probe track 412. In some embodiments, the moving mechanism 418 may place the pressure probe 414 at an upper limit of a position before the pressure probe 414 begins to measure the profile of the polishing pad 290, wherein a previously known distance between the upper limit of the position and the bottom surface 304 of the pad 290 (e.g., a previously known Figure 3 In some embodiments, the moving mechanism 418 can move the pressure probe 414 vertically (e.g., along the z direction) from the upper limit of the position toward the top surface 302, and record the corresponding vertical movement distance of the pressure probe 414. The physical contact between the pressure probe 414 and the top surface 302 can generate a corresponding mechanical pressure. In response to the corresponding mechanical pressure being higher than the predetermined pressure threshold, the detection module 410 can determine the actual movement distance of the pressure probe 414 (e.g., Figure 3 302). For example, pressure probe 414 may be a stylus configured to move vertically along probe track 412. In response to the tip of the stylus contacting top surface 302, a force pressing against the stylus from top surface 300 may be detected by detection module 410. The stylus may be configured to continue pressing top surface 302 until a certain torque associated with this force (e.g., a predetermined pressure threshold) is reached. Thus, the vertical separation between the upper limit position and the tip of the stylus contacting top surface 302 may determine the actual movement distance of pressure probe 414 (e.g., Figure 3 3). With the above distances measured by the pressure probe 414 or previously known, the detection module 410 can scan and reconstruct the profile of one or more regions of the polishing pad 290 - including thickness, surface contours and / or surface roughness. In some embodiments, the force associated with the predetermined pressure threshold may be between about 0.1 mg and about 30 mg. In some embodiments, the force associated with the predetermined pressure threshold may be between about 1 mg and about 15 mg. In some embodiments, the outer diameter of the stylus of the pressure probe 414 may be between about 20 nm and about 50 μm. In some embodiments, the outer diameter of the stylus of the pressure probe 414 may be between about 50 nm and about 25 μm.

[0111] Figure 4B A non-contact detection module 420 according to some embodiments of the present disclosure is shown. As an embodiment of the probe 261, the detection module 420 may include an optical module 421, wherein the optical module 421 may be configured to emit and receive one or more optical signals associated with measuring the profile of one or more areas on the polishing pad 290. The optical module 421 may include an optical transmitter 422, which is configured to emit an optical signal 423 toward the top surface 302; and an optical receiver 424, which is configured to receive an optical signal 425 reflected, deflected, or refracted from the top surface 302. Due to the distance between the optical module 421 and the top surface 302 (e.g., Figure 3 ), the optical signal 423 may have a corresponding phase difference or a corresponding optical path difference with the phase or optical path of the optical signal 425. The detection module 420 may be configured to detect the corresponding phase difference or optical difference between the optical signals 423 and 425 to determine the actual distance between the optical module 421 and the top surface 302. For example, the optical module 421 may be an optical profilometer and may further include a beam splitter ( Figure 4B 4). The beam splitter may be configured to combine the optical signals 423 and 425 so as to generate interference patterns at the optical receiver 424. Such interference patterns may include information associated with the surface contours / profiles of the top surface 302. In some embodiments, the optical module 421 may be a digital holographic device configured to construct a holographic image of the top surface 302 based on the amplitude, phase, and polarization of the optical signals 423 and 425. In some embodiments, the optical module 421 may be a confocal microscope device configured to record multiple two-dimensional images of the top surface 302 at different focal planes. Thus, similar to the detection module 410, the detection module 420 may scan and reconstruct the profile of one or more regions of the polishing pad 290 - including images, thickness, surface contours, and / or surface roughness. In some embodiments, the wavelengths of the optical signals 423 and 425 may be between 300 nm and 750 nm. In some embodiments, the wavelengths of the optical signals 423 and 425 may be between 450 nm and 700 nm. In some embodiments, optical receiver 424 may include a light detector or a charge coupled device camera.

[0112] Figure 4CA non-contact detection module 430 according to some embodiments of the present disclosure is shown. As an embodiment of the probe 261, the detection module 430 may include an acoustic wave module 431, wherein the acoustic wave module 431 may be configured to transmit and receive one or more acoustic wave signals associated with measuring the profile of one or more regions on the polishing pad 290. The acoustic wave module 431 may include an acoustic wave transmitter 432, which is configured to transmit an acoustic wave signal 433 toward the top surface 302; and an acoustic wave receiver 434, which is configured to receive an acoustic wave signal 435 reflected, deflected, or refracted from the top surface 302. The detection module 430 may be configured to detect the phase difference between the acoustic wave signals 433 and 435 to determine the actual distance between the acoustic wave module 431 and the top surface 302, and thus may detect the profile of one or more regions of the polishing pad 290. In some embodiments, the acoustic wave module 431 may be an ultrasonic-based device or a sonar-based device.

[0113] Figure 5 2 is a schematic diagram of a grinding apparatus 500 according to some embodiments of the present disclosure. Unless otherwise specified, the discussion of the grinding apparatus 200 is applicable to the grinding apparatus 500. Figure 5 , the polishing apparatus 500 may include a detection module 260 attached to the conditioner 270. Thus, the probe 261 may extend over and scan the surface of the polishing pad 290. In some embodiments, the probe 261 is a non-contact type probe (e.g., optical or acoustic), and may detect the contour of one or more areas of the polishing pad 290 that are substantially enclosed by the conditioning disk 280.

[0114] Figure 6 2 is a schematic diagram of a grinding apparatus 600 according to some embodiments of the present disclosure. Unless otherwise specified, the discussion of the grinding apparatus 200 is applicable to the grinding apparatus 600. Figure 6 , the polishing apparatus 600 may include an independent detection module 660, wherein the discussion of the detection module 260 applies to the independent detection module 660 unless otherwise stated. The independent detection module 660 may include a probe 261, a beam 263, and a base 662 configured to support the beam 263. The base 662 may be positioned adjacent to the polishing pad 290, and thus enable the beam 263 to extend over the polishing pad 290. In some embodiments, the base 662 may be further configured to rotate the beam 263, and thus enable the beam 263 to sweep over the surface of the polishing pad 190. In some embodiments, the base 662 may be adjacent to the slurry dispenser 250 or the conditioner 270.

[0115] Figure 7700 for operating a polishing system according to some embodiments of the present disclosure. The operations shown in method 700 are not exhaustive; other operations may be performed before, after, or in between any of the illustrated operations. In some embodiments, the operations of method 700 may be performed in a different order. Variations of method 700 are within the scope of embodiments of the present disclosure.

[0116] Method 700 begins at operation 710, where a profile of one or more regions of a polishing pad of a polishing system is determined during a polishing process, the polishing process including a substrate polishing process or a conditioning process. The profile of the polishing pad may be determined by a detection module of the polishing system. The polishing pad may be rotating or stationary during the determination of the profile. The detection module may determine the profile based on measuring a corresponding thickness of one or more regions of the polishing pad. In some embodiments, the detection module may determine the profile based on measuring a corresponding surface contour or surface roughness of one or more regions of the polishing pad. In some embodiments, the detection module may determine the profile based on measuring a recorded image of one or more regions of the polishing pad. In some embodiments, the determination of the profile of the polishing pad may refer to Figures 2 to 6 Description.

[0117] In operation 720, the profile of one or more regions of the polishing pad is compared to a reference profile. The reference profile may be a predetermined profile of the reference polishing pad. For example, the predetermined profile may be a pad profile of a polishing pad that exhibits uniform thickness across the reference polishing pad. In some embodiments, the predetermined profile may also be a pad profile of a reference polishing pad, and the thickness distribution of the reference polishing pad may be described by a mathematical equation (e.g., a monotonic function of the outer diameter of the polishing pad). In some embodiments, the predetermined profile may be a profile of a new polishing pad that has not been used in any polishing process. In some embodiments, the predetermined profile may be one or more images of the surface of a reference polishing pad, wherein the reference polishing pad may be a new polishing pad or a polishing pad of uniform thickness. Comparing the profile to the reference profile may include subtracting the profile from the reference profile. In some embodiments, the comparison may include subtracting the profile from an average property of the reference profile (e.g., thickness or surface roughness). In some embodiments, the comparison may include subtracting the profile pixel by pixel from one or more images of the reference polishing pad. In some embodiments, the comparison may be performed by Figure 1 The comparison is performed using a computer system as described in .

[0118] In some embodiments, the reference profile may be a simulated profile of the polishing pad. The simulated profile may be generated by a mathematical process for predicting the expected wear of the polishing pad caused by the polishing process. For example, the polishing process may be a conditioning process, wherein the mathematical process may predict the wear of the polishing pad by considering a simulated movement trajectory of a conditioning disk of the polishing system and a corresponding simulated polishing intensity of the conditioning process along the movement trajectory. In some embodiments, the simulated polishing intensity of the conditioning process may be determined by the radius of the polishing pad, the rotation speed of the polishing pad, and the rotation speed of the conditioning disk.

[0119] In some embodiments, the simulated profile may be generated by a machine learning process, wherein the training data for the machine learning process may include the historical characteristics of another polishing pad used in a previous polishing process. For example, the other polishing pad may exhibit the resulting profile after being used in a previous adjustment process. The resulting profile and one or more parameters of the previous adjustment process may be included in the training data. The training data may follow a training procedure to train the machine learning process. The trained machine learning process (e.g., configured with optimized parameters) may generate a simulated profile based on one or more parameters of the polishing process currently being performed. In some embodiments, the machine learning process may include a supervised machine learning process, such as linear regression, decision trees, random forests, support vector machines, artificial neural networks, convolutional neural networks, recurrent neural networks, or deep learning, wherein the supervised machine learning process may be trained or optimized by introducing training data through one or more training procedures (e.g., gradient descent algorithms) associated with the supervised machine learning process.

[0120] In some embodiments, the simulated profile may be generated by a big data mining process that takes into account the historical characteristics of other polishing pads used in previous polishing processes. For example, the simulated profile may be an average profile of the other polishing pads. In some embodiments, the simulated profile may be a profile obtained by averaging the profiles of a first group of other polishing pads and excluding a second group of other polishing pads as outliers.

[0121] In operation 730, one or more parameters of the grinding process are adjusted based on the comparison between the profile and the reference profile, wherein the parameters of the grinding process can be adjusted by Figure 1The comparison may indicate existing wear on one or more regions of the polishing pad, while the adjustment may minimize additional wear on the one or more regions of the polishing pad caused by an ongoing or past polishing process. For example, during a conditioning process, a comparison between the profile and a reference profile may indicate that a first region (e.g., a center region) of the polishing pad is substantially thinner than other regions (e.g., an edge region) of the polishing pad. Thus, the conditioning disk may be adjusted to move away from the first region of the polishing pad, while the conditioning process may continue. Similarly, during the polishing process, the computer system may adjust the position of the substrate carrier to move away from heavily worn regions of the polishing pad. In some embodiments, based on the comparison between the profile and the reference profile, the rotational speed of the polishing pad, the position of a substrate carrier of the polishing system, the rotational speed of the substrate carrier, the pressure applied by the substrate carrier, the flow rate of a slurry supply of the polishing system, the position of the slurry supply, the rotational speed of the conditioner, and / or the pressure applied by the conditioner may be adjusted to minimize additional wear on the polishing pad.

[0122] Various aspects of the embodiments may be implemented in software, hardware or a combination thereof. Figure 8 The example computer system 800 is a diagram of an example computer system 800 in which the embodiments or parts of the embodiments of the present disclosure may be implemented as computer readable program code. Figure 1 Various embodiments of the present disclosure are described with reference to a computer system 130 .

[0123] Computer system 800 may be an example of computer system 130 and may include one or more processors, such as processor 804. Processor 804 is connected to a communication infrastructure 806 (eg, a bus or network).

[0124] The computer system 800 also includes a primary memory 808, such as a random access memory (RAM), and may also include a secondary memory 810. The secondary memory 810 may include, for example, a hard drive 812, a removable storage drive 814, and / or a memory stick. The removable storage drive 814 may include a floppy disk drive, a tape drive, an optical disk drive, a flash memory, or the like. The removable storage drive 814 reads from and / or writes to a removable storage unit 818 in a well-known manner. The removable storage unit 818 may include a floppy disk, a tape, an optical disk, a flash drive, etc. that is read by or written to the removable storage drive 814. The removable storage unit 818 includes a computer-readable storage medium having computer software and / or data stored therein. Computer system 800 includes a display interface 802 (which may include input and output devices 803 such as a keyboard, mouse, etc.) that transfers graphics, text, and other data from a communications infrastructure 806 (or from a frame buffer not shown).

[0125] In alternative implementations, the secondary memory 810 may include other similar devices for allowing computer programs or other instructions to be loaded into the computer system 800 (e.g., into the primary memory 808). Such devices may include, for example, a removable storage unit 822 and an interface 820. Examples of such devices may include a program cartridge and cartridge interface (such as that found in a video gaming device), a removable memory chip (e.g., an EPROM or PROM) and an associated socket, and other removable storage units 822 and interfaces 820 that allow software and data to be transferred from the removable storage unit 822 to the computer system 800.

[0126] The computer system 800 may also include a communication interface 824. The communication interface 824 allows software and data to be transferred between the computer system 800 and external devices. The communication interface 824 may include a modem, a network interface (such as an Ethernet card), a communication port, or the like. The software and data transferred via the communication interface 824 are in the form of signals, which may be electrical, electromagnetic, optical, or other signals capable of being received by the communication interface 824. These signals are provided to the communication interface 824 via a communication path 826. The communication path 826 carries the signals and may be implemented using wires or cables, optical fibers, telephone lines, cellular telephone links, RF links, or other communication channels.

[0127] In this document, the terms "computer program storage medium" and "computer-readable storage medium" are generally used to represent non-transitory media, such as removable storage unit 818, removable storage unit 822, and a hard disk installed in hard disk drive 812. Computer program storage medium and computer-readable storage medium may also represent memories, such as primary memory 808 and secondary memory 810, which may be semiconductor memories (e.g., DRAM, etc.). Embodiments of the present disclosure may employ any computer-readable medium now known or later known. Examples of computer-readable storage media include, but are not limited to, non-transitory primary storage devices (e.g., any type of random access memory) and non-transitory secondary storage devices (e.g., hard disk drives, floppy disks, CD ROMs, ZIP disks, magnetic tapes, magnetic storage devices, optical storage devices, MEMS, nanotechnology storage devices, etc.).

[0128] These computer program products provide software to computer system 800. Embodiments of the present disclosure are also directed to computer program products comprising software stored on any computer readable storage medium. When executed in one or more data processing devices, this software causes (several) data storage devices to operate as described herein.

[0129] Computer programs (also referred to herein as "computer control logic") are stored in primary memory 808 and / or secondary memory 810. Computer programs may also be received via communication interface 824. When executed, these computer programs enable computer system 800 to implement various embodiments of the present disclosure. In particular, when executed, the computer programs enable processor 804 to implement the processes of embodiments of the present disclosure, such as, Figure 7 The operations in the depicted method 700. Where software is used to implement the embodiments of the present disclosure, the software may be stored in a computer program product and loaded into the computer system 800 using the removable storage drive 814, interface 820, hard disk 812, or communication interface 824.

[0130] The functions / operations of the above embodiments may be implemented in a variety of configurations and architectures. Thus, some or all of the operations in the above embodiments - for example, Figure 1 The functions of the grinding system 100, the grinding device 200 and Figure 7The method 700 described herein may be executed by the computer system 800 (e.g., by the processor 804), executed in hardware, executed in software, or a combination thereof. In some embodiments, a tangible device or article of manufacture comprising a tangible computer usable or readable medium having control logic (software) stored thereon is also referred to herein as a computer program product or program storage device. Such a computer program product or program storage device includes, but is not limited to, the computer system 800, primary memory 808, secondary memory 810, and removable storage units 818 and 822, and tangible articles of manufacture employing any combination of the foregoing. When executed by one or more data processing devices (such as the computer system 800), such control logic enables such data processing devices to operate as described herein. For example, the hardware / device may be connected to a component 828 (remote device(s), network(s), entity(s) 828) of the computer system 800 or be a part of a component 828.

[0131] Embodiments of the present disclosure provide a polishing apparatus and method for a polishing process that uses a detection module to detect the profile of one or more areas of a polishing pad during the polishing process. The detection module may include a probe configured to measure the profile of the polishing pad, and a beam configured to support the probe. One or more parameters of the polishing process may be adjusted based on a comparison between the detected profile and a reference profile. The polishing apparatus may provide in-situ detection of wear of the polishing pad during the polishing process, thereby reducing the time used to evaluate the condition of the polishing pad and extending the life of the polishing pad.

[0132] In some embodiments, an apparatus for grinding a substrate may include a polishing pad configured to grind the substrate, a substrate carrier configured to hold the substrate against the polishing pad, and a detection module configured to detect the profile of the polishing pad. The detection module may include a probe configured to measure the thickness of one or more regions on the polishing pad and a beam configured to support the probe, wherein the probe may be further configured to move along the beam. In some embodiments, the apparatus further includes a slurry dispenser, the slurry dispenser is configured to dispense CMP slurry onto the surface of the polishing pad, wherein the detection module is attached to the slurry dispenser. In some embodiments, the apparatus further includes a pad adjuster, the pad adjuster is configured to adjust the polishing pad, wherein the detection module is attached to the pad adjuster. In some embodiments, the detection module further includes a base, the base is configured to support the beam, and wherein the base is positioned adjacent to the polishing pad. In some embodiments, the beam is further configured to extend over the polishing pad and sweep over the surface of the polishing pad. In some embodiments, the detection module is configured to detect the profile of the polishing pad during the polishing process. In some embodiments, the probe comprises an optical module configured to transmit and receive one or more optical signals associated with thickness measurement of one or more regions on the polishing pad. In some embodiments, the probe comprises an acoustic wave module configured to transmit and receive one or more acoustic wave signals associated with thickness measurement of one or more regions on the polishing pad. In some embodiments, the probe comprises a contact probe configured to sense a mechanical pressure signal associated with thickness measurement of one or more regions on the polishing pad.

[0133] In some embodiments, a method for operating a polishing system may include determining a profile of one or more regions of a polishing pad of the polishing system during a polishing process, comparing the profile to a reference profile, and adjusting one or more parameters of the polishing process based on the comparison. In some embodiments, determining the profile includes collecting thickness data associated with one or more regions of the polishing pad. In some embodiments, determining the profile includes measuring the thickness of one or more regions of the polishing pad while the polishing pad is rotating. In some embodiments, comparing the profile to the reference profile includes comparing the profile to a simulated profile generated by a mathematical process, a machine learning process, a big data mining process, or a neural network process. In some embodiments, the polishing process includes a substrate polishing process or a conditioning process. In some embodiments, adjusting the one or more parameters includes adjusting at least one of the following: a rotational speed of the polishing pad, a substrate carrier of the polishing system, a rotational speed of the substrate carrier, a pressure applied by the substrate carrier, a flow rate of a slurry supply of the polishing system, a position of the slurry supply, a position of a regulator of the polishing system, a rotational speed of the regulator, and a pressure applied by the regulator.

[0134] In some embodiments, a grinding system for a grinding process may include a grinding device and a computer system configured to communicate with the grinding device. The grinding device may include a grinding pad and a detection module configured to detect the profile of one or more areas of the grinding pad during the grinding process. The computer system may include a memory configured to store instructions for adjusting one or more parameters of the grinding process, and a processor configured to receive a profile from the grinding device, compare the profile with a reference profile, and update the instructions based on the comparison of the profile with the reference profile. In some embodiments, the detection module includes a contact probe, an optical probe, or an acoustic wave probe. In some embodiments, the grinding process includes a substrate grinding process or an adjustment process. In some embodiments, the grinding device further includes a platform, which is configured to support and rotate the grinding pad. In some embodiments, the grinding device further includes an adjuster, which is configured to adjust the grinding pad.

[0135] In some embodiments, a method for operating a polishing system includes determining a profile of one or more regions of a polishing pad of the polishing system during a polishing process. Comparing the profile to a reference profile, wherein the reference profile is a simulated profile of the polishing pad, wherein comparing the profile to the reference profile includes comparing the profile to a simulated profile generated by a mathematical process, a machine learning process, a big data mining process, or a neural network process. Adjusting one or more parameters of the polishing process based on the comparison. In some embodiments, determining the profile includes collecting thickness data associated with the one or more regions of the polishing pad. In some embodiments, determining the profile includes measuring the thickness of the one or more regions of the polishing pad while the polishing pad is rotating. In some embodiments, the polishing process includes a substrate polishing process or a conditioning process. In some embodiments, adjusting the one or more parameters includes adjusting at least one of the following: a rotational speed of the polishing pad, a substrate carrier of the polishing system, a rotational speed of the substrate carrier, a pressure applied by the substrate carrier, a flow rate of a slurry supply of the polishing system, a position of the slurry supply, a position of a pad conditioner of the polishing system, a rotational speed of the pad conditioner, and a pressure applied by the pad conditioner.

[0136] In some embodiments, a method for operating a polishing system includes scanning a surface of a polishing pad to determine a surface profile of the polishing pad. A comparison between the surface profile and a reference profile is performed. Based on the comparison, an area of ​​the surface of the polishing pad is determined to be heavily worn, and a position of a wafer being polished on the polishing pad is adjusted by moving the wafer away from the area. In some embodiments, scanning the surface of the polishing pad includes moving an optical transmitter and an optical receiver over the surface of the polishing pad. In some embodiments, scanning the surface of the polishing pad also includes transmitting a first optical signal to the surface of the polishing pad using the optical transmitter, and receiving a second optical signal reflected by the surface of the polishing pad using the optical receiver. In some embodiments, scanning the surface of the polishing pad also includes detecting a phase difference between the first optical signal and the second optical signal.

[0137] In some embodiments, a method for operating a grinding system includes a method for operating a grinding system, including performing a grinding process on a wafer by pressing the wafer against a surface of a grinding pad and rotating the wafer. While grinding the wafer, measuring a surface profile of the grinding pad. Applying slurry on the grinding pad. Determining a condition of the surface of the grinding pad. Based on the condition of the grinding pad, adjusting a position on the grinding pad where the slurry is applied.

[0138] It should be understood that the description section, rather than the abstract of the disclosure, is intended to be used to interpret the scope of the claims. The abstract section of the disclosure may set forth one or more but not all contemplated embodiments, and thus is not intended to limit the scope of the appended claims.

[0139] The foregoing disclosure summarizes the features of several embodiments so that those skilled in the art can better understand the aspects of the present disclosure. Those skilled in the art should understand that they can easily use the embodiments of the present disclosure as a basis for designing or modifying other processes and structures for achieving the same purposes and / or achieving the same advantages of the embodiments described herein. Those skilled in the art should also recognize that such equivalent constructions do not depart from the spirit and scope of the embodiments of the present disclosure, and that they can make various changes, substitutions and replacements without departing from the spirit and scope of the scope of the appended claims.

Claims

1. A method for operating a grinding system, characterized in that Include: Determining a profile of one or more regions of a polishing pad of a polishing system during a polishing process; comparing the profile to a reference profile, wherein the reference profile is a simulated profile of the polishing pad, wherein comparing the profile to the reference profile comprises comparing the profile to the simulated profile generated by a mathematical process, a machine learning process, a big data mining process, or a neural network process; and One or more parameters of the polishing process are adjusted based on the comparison.

2. The method according to claim 1, characterized in that Determining the profile includes collecting thickness data associated with the one or more regions of the polishing pad.

3. The method according to claim 1, characterized in that Determining the profile includes measuring a thickness of one or more regions of the polishing pad while the polishing pad is rotating.

4. The method according to claim 1, characterized in that: The polishing process includes a substrate polishing process or a conditioning process.

5. The method according to claim 1, characterized in that Adjusting one or more parameters includes adjusting at least one of: a rotational speed of the polishing pad, a substrate carrier of the polishing system, a rotational speed of the substrate carrier, a pressure applied by the substrate carrier, a flow rate of a slurry supplier of the polishing system, a position of the slurry supplier, a position of the pad conditioner of the polishing system, a rotational speed of the pad conditioner, and a pressure applied by the pad conditioner.

6. A method for operating a grinding system, characterized in that Include: Scanning a surface of a polishing pad to determine a surface profile of the polishing pad; performing a comparison between the surface profile and a reference profile; and An area of ​​the surface of the polishing pad is determined to be heavily worn based on the comparison, and a position of the wafer being polished on the polishing pad is adjusted by moving a wafer away from the area.

7. The method according to claim 6, characterized in that Scanning the surface of the polishing pad includes moving an optical transmitter and an optical receiver over the surface of the polishing pad.

8. The method according to claim 7, characterized in that Scanning the surface of the polishing pad further comprises: Using the optical transmitter to transmit a first optical signal to the surface of the polishing pad; and The optical receiver is used to receive a second optical signal reflected by the surface of the polishing pad.

9. The method according to claim 8, characterized in that Scanning the surface of the polishing pad further includes detecting a phase difference between the first optical signal and the second optical signal.

10. A method for operating a grinding system, characterized in that Include: Performing a polishing process on a wafer by pressing the wafer onto a surface of a polishing pad and rotating the wafer; While grinding the wafer, measuring a surface profile of the grinding pad; applying a slurry on the polishing pad; determining a condition of the surface of the polishing pad; and Based on the condition of the polishing pad, a position on the polishing pad where the slurry is dispensed is adjusted.

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