Electroplating device

Abstract

The invention provides an electroplating device which comprises an electroplating shell, a clamping mechanism, a rotating mechanism, a spraying mechanism and a sealing mechanism, the electroplating shell is provided with a first opening, the clamping mechanism is rotationally connected into the electroplating shell and used for clamping a target wafer, and the spraying mechanism is connected into the electroplating shell and abuts against the clamping mechanism; the spraying mechanism and the clamping mechanism are coaxially arranged, the spraying mechanism is used for injecting electroplating liquid into the to-be-electroplated surface of the target wafer downwards in the vertical direction, the sealing mechanism is used for opening or closing the first opening, and after the spraying mechanism completes the electroplating process on the to-be-electroplated surface of the upper end of the target wafer, the first opening in the electroplating shell is opened; after the manipulator takes out the target wafer from the clamping mechanism, the target wafer can be directly transferred to positions corresponding to other processes without overturning, so that the operation steps of the manipulator are reduced, the movement time of the manipulator is shortened, and the production efficiency of the electroplating device is improved.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor manufacturing technology, and more specifically, to an electroplating device. Background Art

[0002] In the field of semiconductor processing technology, the semiconductor electroplating process is to deposit a metal film layer on the surface of the wafer through an electroplating device to achieve electrical interconnection between multiple devices on the surface of the wafer. The electroplating process is divided into vertical electroplating and horizontal electroplating. Among them, horizontal electroplating equipment has gradually become the mainstream electroplating equipment due to its small chamber volume, small amount of electroplating solution required and low manufacturing cost.

[0003] At present, in the existing horizontal electroplating equipment, when electroplating the wafer, the surface to be electroplated of the wafer needs to be set downward, and the target wafer needs to be flipped after the electroplating process is completed and when the wafer is transferred to other process units. The problem caused by adopting the above technical solution is: since the wafer needs to be flipped, the robot arm needs to have a flipping function, which not only increases the complexity of the robot arm structure, but also reduces the transfer efficiency of the machine to the wafer, thereby reducing the production efficiency of the electroplating device. Summary of the invention

[0004] The purpose of the embodiments of the present application is to provide an electroplating device to solve the technical problem in the prior art that the robot needs to be flipped during the wafer conveying process.

[0005] To achieve the above-mentioned purpose, the technical solution adopted in this application is: to provide an electroplating device, comprising: The electroplated housing is provided with a first opening; A clamping mechanism, rotatably connected to the housing, for clamping a target wafer; A rotating mechanism, disposed outside the housing and connected to the clamping mechanism, for driving the clamping mechanism to rotate; A spraying mechanism, connected to the housing and abutting against the clamping mechanism, the spraying mechanism and the clamping mechanism are coaxially arranged, and in the vertical direction, the spraying mechanism is located above the target wafer, and the spraying mechanism is used to inject electroplating liquid into the surface to be electroplated of the target wafer; A sealing mechanism is used to open or close the first opening.

[0006] Optionally, it is characterized in that the spraying mechanism includes: Ion exchange components; an anode assembly connected to the ion exchange assembly and provided with an anode cavity; A cathode assembly is connected to the side of the ion exchange assembly facing away from the anode assembly and is arranged opposite to the clamping mechanism. The cathode assembly is provided with a cathode cavity, and a jet flow channel connected to the cathode cavity is provided on the cathode assembly. The jet flow channel is used to make the plating solution in the cathode assembly flow downward along the vertical direction toward the target wafer.

[0007] Optionally, the anode channel comprises: an anode housing connected to the ion exchange assembly; An anode plate is installed in the anode plate, and the anode cavity is formed between the anode plate and the anode shell.

[0008] Optionally, a first flow channel is provided on the anode shell and the anode plate, the first flow channel is connected to the anode cavity, and the first flow channel is used to allow the anode liquid to flow into and out of the anode cavity and to increase the contact area between the anode plate and the anode liquid.

[0009] Optionally, the anode plate is provided with an air guide hole, the anode shell is provided with an exhaust hole, and the air guide hole is communicated with the exhaust hole.

[0010] Optionally, the cathode assembly comprises: a cathode housing connected to a side of the ion exchange assembly facing away from the anode housing and provided with the cathode cavity; The spraying plate is connected to the side of the cathode shell facing away from the spraying plate and is provided with a spraying flow channel.

[0011] Optionally, the electroplating solution flows into the cathode cavity through a second flow channel, and the second flow channel sequentially penetrates the anode shell, the ion exchange component and the cathode shell and then communicates with the cathode cavity.

[0012] Optionally, the ion exchange component comprises: A mounting frame connected to the anode housing and the cathode housing; An ion exchange membrane is mounted on the mounting frame, and the anode cavity is formed between the ion exchange membrane and the anode plate.

[0013] Optionally, the clamping mechanism comprises: A rotating assembly, rotatably connected in the housing and connected to the rotating mechanism; A conductive component connected to the rotating component; A bearing assembly, slidably connected to the rotating assembly, and having a first position and a second position relative to the rotating assembly; When the carrying component is located at the first position, the carrying component and the conductive component jointly clamp the target wafer, and the rotating mechanism drives the carrying component and the conductive component to rotate synchronously through the rotating component; When the carrying component is located at the second position, the carrying component drives the target wafer to be separated from the conductive component.

[0014] Optionally, the bearing assembly includes: A carrier platform, slidably connected to the rotating component, and having the first position and the second position; A support column protrudes from the carrier platform and is used to support the target wafer; A lifting shaft, rotatably connected to the carrying platform, the lifting shaft extending away from a side of the carrying platform to the outside of the shell, and the lifting shaft is used to drive the carrying platform to move between the first position and the second position; The lifting drive member is arranged on the outer side of the shell and connected to the end of the lifting shaft away from the supporting platform, and is used for driving the lifting shaft to drive the supporting platform to move.

[0015] Optionally, there are multiple pillars, and the multiple pillars are evenly spaced along the circumference of the supporting platform.

[0016] Optionally, the bearing assembly further includes: The bearing base is connected to the bearing platform and a rotating cavity is formed between the bearing base and the bearing platform. A part of the rotating component is accommodated in the rotating cavity, and another part is located outside the rotating cavity.

[0017] Optionally, the rotating assembly comprises: A rotating plate, accommodated in the rotating chamber and connected to the rotating mechanism; A guide member connected to the rotating plate, and the guide member passes through the bearing platform and is connected to the conductive component; A conductive rod is sleeved on the outer side of the lifting shaft and is rotatably connected to the lifting shaft, and is connected to the side of the rotating plate away from the guide member, and the conductive rod is used to transmit current to the target wafer through the rotating plate, the guide member, and the clamping assembly.

[0018] Optionally, the rotating plate comprises: A non-metallic rotating plate connected to the rotating mechanism; The metal rotating plate is connected to the non-metal rotating plate, the guide member is connected to the metal rotating plate, and the conductive rod is connected to the metal rotating plate.

[0019] Optionally, the conductive component includes: A fixing ring connected to the guide rod and provided with a first mounting cavity; A sealing member is installed in the first installation cavity, and a second installation cavity is provided on the sealing member; A conductive ring, installed in the second installation cavity and abutting against the fixing ring; When the carrier is located at the first position, the seal and the conductive ring are both in contact with the target wafer, and along the radial direction of the target wafer, the contact portion between the seal and the target wafer is located on the inner side of the conductive ring and the target wafer.

[0020] Optionally, a conductive contact is convexly provided on the inner side of the conductive ring, the conductive contact is used to abut against the target wafer, and there are multiple conductive contacts, and the multiple conductive contacts are evenly spaced along the circumference of the conductive ring.

[0021] Optionally, it also includes: The liquid level regulating mechanism is communicated with the interior of the electroplating shell and is used for regulating the liquid level height of the electroplating solution.

[0022] Optionally, the sealing mechanism comprises: A sealing door, used for opening and covering the first opening; A first driving member, connected to the sealing door, for driving the sealing door to move in a first direction; a second driving member, connected to the first driving member, and used to drive the first driving member to drive the sealing door to move in a second direction; The first direction and the second direction are perpendicular to each other.

[0023] The electroplating device provided by the present application has the following beneficial effects: compared with the prior art, the electroplating device provided by the present application includes an electroplating shell, a clamping mechanism, a rotating mechanism, a spraying mechanism and a sealing mechanism, wherein the electroplating shell is provided with a first opening, the clamping mechanism is rotatably connected in the electroplating shell and is used to clamp the target wafer, the spraying mechanism is connected in the electroplating shell and abuts against the clamping mechanism, and the spraying mechanism is coaxially arranged with the clamping mechanism, the spraying mechanism is used to inject the electroplating liquid downwardly in the vertical direction toward the surface to be electroplated of the target wafer, and the sealing mechanism is used to open or close the first opening. The first opening is achieved by coaxially arranging the spraying mechanism and the clamping mechanism and the spraying mechanism abutting against the clamping mechanism. Since the spraying mechanism injects the plating liquid in the vertical direction toward the surface to be plated located on the upper end face of the target wafer, after the electroplating process is completed on the target wafer, the first opening on the electroplating shell is opened. After the robot takes the target wafer out of the clamping mechanism, it can directly transfer the target wafer to the position corresponding to other processes without flipping it, thereby reducing the operating steps of the robot to reduce the movement time of the robot, thereby improving the production efficiency of the electroplating device. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the solutions in the embodiments of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0025] Figure 1 A schematic diagram of the structure of an electroplating device provided in an embodiment of the present application; Figure 2 A schematic diagram of the structure of the first opening is provided for an embodiment of the present application; Figure 3 A cross-sectional view of an electroplating device provided in an embodiment of the present application; Figure 4 A schematic diagram of the structure of a second electroplating housing provided in an embodiment of the present application; Figure 5 A three-dimensional diagram of a clamping mechanism provided in an embodiment of the present application; Figure 6 A cross-sectional view of a clamping mechanism provided in an embodiment of the present application; Figure 7 A schematic diagram of the structure of the load-bearing assembly provided in an embodiment of the present application; Figure 8 A schematic diagram of the conductive component structure provided in an embodiment of the present application; Fig. 9 A schematic diagram of the structure of the guide member provided in the embodiment of the present application; Fig.10 for Figure 6 A magnified view of the structure of the middle part A; Fig.11 A schematic diagram of the structure of a fixing ring provided in an embodiment of the present application; Fig.12 A schematic diagram of the structure of the spraying mechanism provided in the embodiment of the present application; Fig.13 A cross-sectional view of a spraying mechanism provided in an embodiment of the present application; Fig.14 A cross-sectional view from another perspective of the spraying mechanism provided in an embodiment of the present application; Fig.15 A schematic diagram of the structure of the anode assembly provided in an embodiment of the present application; Fig.16 A schematic diagram of the structure of the anode shell provided in an embodiment of the present application.

[0026] Among them, the reference numerals in the figure are: 10. electroplating housing; 10a. first electroplating housing; 10b. second electroplating housing; 11. electroplating chamber; 12. first opening; 13. sealing ring; 14. electroplating liquid inlet; 15. electroplating liquid outlet; 16. anode liquid inlet; 17. anode liquid outlet; 18. cathode liquid inlet; 20. Clamping mechanism; 21. Rotating assembly; 211. Rotating cavity; 212. Rotating plate; 2121. Non-metallic rotating plate; 2122. Metallic rotating plate; 213. Guide; 214. Conductive rod; 215. Conductive slip ring; 22. Conductive assembly; 221. Fixed ring; 221a. First fixed ring; 221b. Second fixed ring; 2211. First mounting cavity; 2212. Third sealing part; 2213. Guide slope; 222. Sealing member; 2221. Second mounting cavity; 2222. First sealing part; 2223. Second sealing part; 223. Conductive ring; 2231. Conductive ring body; 2232. Conductive contact; 224. Conductive coil; 23. Carrying assembly; 231. Carrying platform; 232. Pillar; 233. Lifting shaft; 234. Lifting drive member; 235. Drive plate; 236. Carrying base; 30. Rotating mechanism; 31. Stator; 32. Rotating shaft; 40, spraying mechanism; 41, ion exchange assembly; 411, mounting frame; 412, ion exchange membrane; 42, anode assembly; 421, anode shell; 4211, exhaust hole; 4212, flow guide; 422, anode plate; 4221, air guide hole; 423, anode cavity; 43, cathode assembly; 431, cathode shell; 4311, cathode cavity; 432, spraying plate; 4321, injection channel; 50. Sealing mechanism; 51. Sealing door; 52. First driving member; 53. Second driving member; 54. Fixed seat; 60. Target wafer; 70, first flow channel; 71, first liquid inlet channel; 72, flow guide channel; 721, first flow guide channel; 7211, second opening; 722, second flow guide channel; 7221, third opening; 73, first liquid outlet channel; 74, third flow guide channel; 80. Second flow channel; 81. Second liquid inlet channel; 82. Connecting flow channel; 83. Second liquid outlet channel. DETAILED DESCRIPTION

[0027] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0028] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0029] It should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0030] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0031] Please also read Figures 1 to 16 , the electroplating device provided in the embodiment of the present application is now described.

[0032] An electroplating device, see Figures 1 to 4 , including an electroplating shell 10, a clamping mechanism 20, a rotating mechanism 30, a spraying mechanism 40 and a sealing mechanism 50.

[0033] The electroplating shell 10 includes a first electroplating shell 10a and a second electroplating shell 10b, the first electroplating shell 10a and the second electroplating shell 10b are detachably connected, and a plating cavity 11 is formed between the first electroplating shell 10a and the second electroplating shell 10b, and the plating cavity 11 is provided with a first opening 12, and the first opening 12 is formed on the side wall of the first electroplating shell 10a.

[0034] The clamping mechanism 20 is rotatably connected to the electroplating housing 10, and is used to clamp the target wafer 60, and the surface to be electroplated on the target wafer 60 is set upward. After the clamping mechanism 20 clamps the target wafer 60, the electroplating solution is injected into the electroplating chamber 11, and the target wafer 60 is located below the liquid surface of the electroplating solution, so as to perform the electroplating process on the target wafer 60, and after the electroplating process on the target wafer 60 is completed, the electroplating solution in the electroplating chamber 11 is discharged, and the target wafer 60 is located above the liquid surface of the electroplating solution, and the clamping mechanism 20 releases the target wafer 60, so that the robot can take out the target wafer 60 that has been electroplated from the clamping mechanism 20, and put the next target wafer 60 that needs to be electroplated.

[0035] The rotating mechanism 30 is disposed outside the housing and connected to the clamping mechanism 20, and is used to drive the clamping mechanism 20 to rotate. When the target wafer 60 is below the liquid surface of the electroplating solution and is electroplated, the rotating mechanism 30 drives the clamping mechanism 20 to rotate to achieve rotational electroplating of the target wafer 60, and when the target wafer 60 is above the liquid surface of the electroplating solution and the electroplating is completed, the rotating mechanism 30 drives the clamping mechanism 20 to rotate so that the excess electroplating solution on the target wafer 60 is separated from the target wafer 60 under the action of centrifugal force, and then the clamping device releases the target wafer 60, so that the robot can take out the target wafer 60 that has completed the electroplating process and place the next target wafer 60.

[0036] The spraying mechanism 40 is connected in the housing and abuts against the clamping mechanism 20 . The spraying mechanism 40 and the clamping mechanism 20 are coaxially arranged and used to inject the plating liquid into the surface to be plated of the target wafer 60 in a vertical downward direction.

[0037] The sealing mechanism 50 is used to open or close the first opening 12 .

[0038] When the sealing mechanism 50 opens the first opening 12 of the electroplating chamber 11, the robot places the target wafer 60 that needs to undergo the electroplating process on the clamping mechanism 20, and then the robot withdraws, and the sealing mechanism 50 closes the first opening 12. At this time, the electroplating device performs the electroplating process on the target wafer 60, and throws away the excess electroplating liquid on the target wafer 60 after the electroplating process. Then, the sealing mechanism 50 opens the first opening 12 again, and the robot takes the target wafer 60 that has completed the electroplating process out of the clamping mechanism 20 and puts in a new target wafer 60.

[0039] Compared with the prior art, the electroplating device provided in the present application includes a housing, a clamping mechanism 20, a rotating mechanism 30, a spraying mechanism 40 and a sealing mechanism 50, wherein the electroplating housing 10 is provided with a first opening 12, the clamping mechanism 20 is rotatably connected in the housing, and is used to clamp the target wafer 60, the spraying mechanism 40 is connected in the housing, and is in contact with the clamping mechanism 20, and the spraying mechanism 40 is coaxially arranged with the clamping mechanism 20, the spraying mechanism 40 is used to inject the electroplating liquid into the surface to be electroplated of the target wafer 60 in a vertical direction downward, and the sealing mechanism 50 is used to open or close the first opening 12, by The spraying mechanism 40 is coaxially arranged with the clamping mechanism 20 and the spraying mechanism 40 is abutted against the clamping mechanism 20. Since the spraying mechanism 40 injects the plating liquid along the vertical direction toward the surface to be plated located on the upper end face of the target wafer 60, after the electroplating process is completed on the target wafer 60, the first opening 12 on the electroplating shell 10 is opened. After the robot takes the target wafer 60 out of the clamping mechanism 20, the target wafer 60 can be directly transferred to the position corresponding to other processes without flipping it, thereby reducing the operation steps of the robot to reduce the movement time of the robot, thereby improving the production efficiency of the electroplating device.

[0040] In one embodiment of the present application, see Figures 3 to 11 The clamping mechanism 20 includes a rotating component 21 , a conductive component 22 and a bearing component 23 .

[0041] The rotating assembly 21 is rotatably connected in the housing and connected to the rotating mechanism 30. The conductive assembly 22 is connected to the rotating assembly 21. The bearing assembly 23 is slidably connected to the rotating assembly 21 and has a first position and a second position relative to the rotating assembly 21.

[0042] When the carrier component 23 is located at the first position, the carrier component 23 and the conductive component 22 jointly clamp the target wafer 60, that is, when the carrier component 23 is located at the first position, the carrier component 23 and the conductive mechanism are in a clamping state for the target wafer 60, and the rotating mechanism 30 drives the carrier component 23 and the conductive component 22 to rotate synchronously through the rotating component 21, and at this time, the target wafer 60 can be located below the liquid level of the plating liquid, or above the liquid level of the plating liquid.

[0043] When the target wafer 60 is below the surface of the electroplating solution, the rotating mechanism 30 drives the bearing assembly 23 and the conductive assembly 22 through the rotating assembly 21 to drive the target wafer 60 to rotate in the electroplating solution, so as to achieve rotational electroplating of the target wafer 60. When the target wafer 60 is above the surface of the electroplating solution, the rotating mechanism 30 drives the bearing assembly 23 and the conductive assembly 22 through the rotating assembly 21 to drive the target wafer 60 to rotate, so that the excess electroplating solution on the target wafer 60 is separated from the target wafer 60.

[0044] When the carrier component 23 is located at the second position, the carrier component 23 drives the target wafer 60 to separate from the conductive component 22, so that the robot can remove the target wafer 60 that has completed the electroplating process from the carrier component 23 and place the next target wafer 60 to be electroplated on the carrier component 23.

[0045] In one embodiment of the present application, see Figure 3 , Figures 5 to 8 The bearing assembly 23 includes a bearing platform 231 , a support column 232 , a lifting shaft 233 and a lifting driving member 234 .

[0046] Specifically, the carrier 231 is slidably connected to the rotating component 21 and has a first position and a second position. The pillar 232 is protruding from the side of the carrier 231 close to the conductive component 22, and is used to support the target wafer 60. When the target wafer 60 is placed on the pillar 232, the target wafer 60 and the carrier 231 are spaced apart, and the distance between the target wafer 60 and the carrier 231 can allow a robot to enter, so that the robot can place the target wafer 60 on the pillar 232 and remove the target wafer 60 from the pillar 232.

[0047] The lifting shaft 233 is rotatably connected to the side of the carrier 231 away from the conductive component 22, and the side of the lifting shaft 233 away from the carrier 231 extends to the outside of the shell, and the lifting shaft 233 is used to drive the carrier 231 to move between the first position and the second position. The lifting drive member 234 is disposed on the outside of the shell and connected to the end of the lifting shaft 233 away from the carrier 231, and is used to drive the lifting shaft 233 to drive the carrier 231 to move.

[0048] A driving plate 235 is disposed on one end of the lifting shaft 233 away from the supporting platform 231 . The driving plate 235 is protruded from the side wall of the lifting shaft 233 along the axial direction perpendicular to the telescopic rod.

[0049] The telescopic driving member is a cylinder, which includes a cylinder body and a piston rod connected to the cylinder body and sliding relative to the cylinder body along the axial direction of the telescopic rod. The piston rod is connected to the driving plate 235 of the lifting shaft 233, and the cylinder body is in a fixed state. When the piston rod moves along the axial direction of the lifting shaft 233, the driving plate 235 drives the lifting shaft 233 to drive the supporting platform 231 to move between the first position and the second position.

[0050] In one embodiment of the present application, the cylinder is disposed above the driving plate 235. When the piston rod extends relative to the cylinder body, the bearing platform 231 moves from the first position to the second position, and when the piston rod retracts relative to the cylinder body, the bearing platform 231 moves from the second position to the first position.

[0051] In another embodiment of the present application, the cylinder is disposed below the driving plate 235. When the piston rod extends relative to the cylinder body, the bearing platform 231 moves from the second position to the first position, and when the piston rod retracts relative to the cylinder body, the bearing platform 231 moves from the first position to the second position.

[0052] In another embodiment of the present application, the telescopic driving member is a servo motor, a lead screw is connected to the rotating shaft 32 of the servo motor, a lead screw nut is fixedly connected to the driving plate 235, and the lead screw nut is threadedly connected to the lead screw. When the servo motor rotates, the lead screw drives the driving plate 235 through the lead screw nut to drive the telescopic rod to move, thereby realizing the movement of the bearing platform 231 between the first position and the second position.

[0053] In one embodiment of the present application, see Figures 5 to 7 There are multiple pillars 232 , and the multiple pillars 232 are evenly spaced along the circumference of the supporting platform 231 .

[0054] Specifically, the number of the pillars 232 is an even number greater than four.

[0055] Preferably, the number of the pillars 232 is 6, and the 6 pillars 232 are evenly spaced along the circumference of the carrier 231. The gap between any two adjacent pillars 232 can allow a robot to pass through, so that the robot can place the wafer to be electroplated on the pillars 232 and can remove the target wafer 60 that has completed the electroplating process from the pillars 232.

[0056] The six pillars 232 are all in contact with the edge of the target wafer 60 , so as to provide a uniform clamping force on the target wafer 60 in the circumferential direction when the carrier 231 is located at the first position.

[0057] In the present application, the supporting assembly 23 further includes a supporting base 236 .

[0058] The supporting base 236 is connected to a side of the supporting platform 231 away from the conductive component 22 , and a rotating cavity 211 is formed between the supporting base 236 and the supporting platform 231 . The rotating component 21 is partially accommodated in the rotating cavity 211 and the other part is located outside the rotating cavity 211 .

[0059] In this application, please refer to Figure 3 , Figures 6 to 9 The rotating assembly 21 includes a rotating plate 212 , a guide member 213 , and a conductive rod 214 .

[0060] Specifically, the rotating plate 212 is accommodated in the rotating chamber 211 and connected to the rotating mechanism 30. The rotating mechanism 30 is used for the rotating plate 212 to rotate in the rotating chamber 211. The lifting shaft 233 passes through the rotating plate 212, and the rotating plate 212 rotates relative to the lifting shaft 233.

[0061] The guide member 213 is a rod-shaped structure, and the guide member 213 is connected to one side of the rotating plate 212 close to the supporting platform 231. A guide hole is provided on the supporting platform 231, and the guide hole penetrates the supporting platform 231 along the wall thickness direction of the supporting platform 231. The guide member 213 is connected to the conductive component 22 after passing through the guide hole on the supporting platform 231, and when the supporting platform 231 moves between the first position and the second position, the guide hole is also used to guide the guide member 213.

[0062] The conductive rod 214 is sleeved on the outside of the lifting shaft 233 and rotates relative to the lifting shaft 233, and is connected to the side of the rotating plate 212 away from the guide member 213. The conductive rod 214 is used to transmit current to the target wafer 60 through the rotating plate 212, the guide member 213, and the clamping assembly.

[0063] When the rotating mechanism 30 drives the rotating plate 212 to rotate in the rotating chamber 211, the rotating plate 212 drives the supporting platform 231 to rotate through the guide member 213. Since the conductive component 22 is fixed on the guide member 213, when the rotating plate 212 drives the guide member 213 to rotate, the conductive component 22 rotates synchronously with the supporting platform 231 under the drive of the guide member 213.

[0064] In one implementation of this application, see Figure 6 A conductive slip ring 215 is connected to one end of the conductive rod 214 located on the outer side of the shell. When the conductive rod 214 rotates, the conductive slip ring 215 provides rotational power to the conductive component 22, wherein the current enters the target wafer 60 in sequence along the conductive slip ring 215, the conductive rod 214, the rotating plate 212, the guide 213, and the conductive component 22.

[0065] In one implementation of this application, see Figure 6 and Figure 7 The rotating plate 212 includes a non-metal rotating plate 2121 and a metal rotating plate 2122 .

[0066] Specifically, the non-metallic rotating plate 2121 is connected to the rotating mechanism 30. The metal rotating plate 2122 is connected to the non-metallic rotating plate 2121, and the guide member 213 is connected to the metal rotating plate 2122, and the conductive rod 214 is connected to the metal rotating plate 2122 to conduct current to the metal rotating plate 2122.

[0067] In another embodiment of the present application, the number of the guide members 213 is an even number greater than 0, such as 2, 4 or 6.

[0068] Preferably, the number of guide members 213 is 4, and the 4 guide members 213 are spaced along the circumference of the metal rotating disk, and the distance between any two adjacent guide members 213 can allow the robot to pass through, so that the robot can place the wafer to be electroplated on the pillar 232 and the robot can remove the target wafer 60 that has completed the electroplating process from the pillar 232.

[0069] In one embodiment of the present application, see Figure 3 and Figure 6 The rotating mechanism 30 is a hollow rotating motor, which includes a stator 31 and a rotating shaft 32 connected to the stator 31 and driven by the stator 31. The stator 31 and the rotating shaft 32 are both hollow, and the stator 31 and the rotating shaft 32 are both located on the outside of the lifting shaft 233. One end of the rotating shaft 32 away from the stator 31 extends into the rotating chamber 211 and is fixedly connected to the non-metallic rotating disk.

[0070] The rotating shaft 32 of the hollow rotating motor extends into the rotating cavity 211 after passing through the bottom of the shell and the bearing base 236 and is connected to the rotating disk. The rotating shaft 32 of the hollow rotating motor rotates relative to the shell.

[0071] See also Figure 3 A sealing ring 13 is connected to the bottom of the second electroplating shell 10b, and the sealing ring 13 is connected to the outside of the second electroplating shell 10b by bolts. The shaft 32 of the hollow rotating motor rotates relative to the sealing ring 13, and the inner wall of the sealing ring 13 abuts against the outer wall of the shaft 32 of the hollow rotating motor, thereby sealing the connection between the shaft 32 and the sealing ring 13, thereby preventing the electroplating solution from leaking from the connection between the shaft 32 and the sealing ring 13.

[0072] When the rotating shaft 32 of the hollow rotating motor rotates, it drives the non-metallic rotating disk to rotate, the non-metallic rotating disk drives the metal rotating disk to rotate, and the metal rotating disk drives the supporting platform 231 and the conductive component 22 to rotate through the guide member 213 .

[0073] In one embodiment of the present application, see Figures 8 to 11 The conductive component 22 includes a fixing ring 221 , a sealing member 222 and a conductive ring 223 .

[0074] Specifically, the fixing ring 221 is connected to the guide member 213 by screws. There are two fixing rings 221, which are a first fixing ring 221a and a second fixing ring 221b. The second fixing ring 221b is fixed on the guide member 213, and the first fixing ring 221a is fixedly connected to the first fixing ring 221a by screws.

[0075] The first fixing ring 221a is provided with an annular first installation cavity 2211. The sealing member 222 is an annular structure and is installed in the first installation cavity 2211, and an annular second installation cavity 2221 is provided on the sealing member 222, the opening of the second installation cavity 2221 faces the second fixing ring 221b, and the side of the sealing member 222 that is away from the opening of the second installation cavity 2221 abuts against the side wall of the first installation cavity 2211 located on the first fixing ring 221a. The conductive ring 223 is installed in the second installation cavity 2221 and abuts against the second fixing ring 221b.

[0076] When the carrier 231 is located in the first position, the seal 222 and the conductive ring 223 are both in contact with the target wafer 60, and along the radial direction of the target wafer 60, the contact portion between the seal 222 and the target wafer 60 is located on the inner side of the conductive ring 223 and the target wafer 60 to prevent the plating liquid from entering the second mounting cavity 2221 and contaminating the conductive ring 223.

[0077] The first installation cavity 2211 is annular and is formed in the first fixing ring 221a. The first installation cavity 2211 has an opening, and the opening of the first installation cavity 2211 faces the target wafer 60. The bottom wall of the first installation cavity 2211 and a side wall adjacent to the bottom wall are arranged on the first fixing ring 221a, and the other side wall adjacent to the bottom wall in the first installation cavity 2211 is arranged on the second fixing ring 221b.

[0078] The conductive ring 223 is installed in the second installation cavity 2221 and abuts against the side wall of the first installation cavity 2211 located on the second fixing ring 221 b.

[0079] The conductive ring 223 includes a conductive ring body 2231 and a conductive contact 2232. The conductive ring body 2231 is installed in the first installation cavity 2211. The conductive contact 2232 is protrudingly arranged on the inner side of the conductive ring body 2231 for contacting with the target wafer 60.

[0080] The conductive contact 2232 includes a contact portion and a connecting portion, the contact portion is connected to the conductive ring 223 body through the connecting portion, the contact portion and the conductive ring 223 body are arranged at an angle, and the contact portion is parallel to the conductive ring 223 body. When the carrier 231 is located at the first position, the contact portion abuts against the surface to be plated of the target wafer 60.

[0081] There are multiple conductive contacts 2232 , which are evenly spaced along the circumference of the conductive ring 223 . By providing multiple conductive contacts 2232 , a uniform cathode current is provided to the surface to be plated of the target wafer 60 in the circumference of the target wafer 60 .

[0082] In another embodiment of the present application, the conductive contact 2232 and the conductive ring 223 body are located in the same plane.

[0083] In another embodiment of the present application, the contact portion and the connecting portion on the conductive contact 2232 are arranged at an angle, and the connecting portion and the body of the conductive ring 223 are arranged at an angle.

[0084] Specifically, the connecting portion is bent relative to the conductive ring 223 body from the second fixing ring 221b toward the first fixing ring 221a, and the contact portion is bent relative to the connecting portion from the first fixing ring 221a toward the second fixing ring 221b.

[0085] In one embodiment of the present application, see Fig.10 and Fig.11 The conductive component 22 also includes a conductive coil 224 .

[0086] The conductive coil 224 is a ring-shaped structure, and is installed in the second installation cavity 2221 and abuts against the conductive ring body 2231 on the conductive ring 223 .

[0087] In one embodiment of the present application, a first sealing portion 2222 and a second sealing portion 2223 are provided on the sealing member 222 , the first sealing portion 2222 and the second sealing portion 2223 are spaced apart along the radial direction of the target wafer 60 , and the second sealing portion 2223 is located at one end of the sealing member 222 away from the target wafer 60 .

[0088] The first sealing portion 2222 is used to abut against the target wafer 60, and the abutting portion of the first sealing portion 2222 and the target wafer 60 along the target wafer 60 is located on the inner side of the abutting portion of the conductive contact 2232 and the target wafer 60. The second sealing portion 2223 abuts against the inner wall of the first mounting cavity 2211. Specifically, the second sealing portion 2223 abuts against the side wall of the first mounting cavity 2211 located on the second fixing ring 221b to seal the connection portion between the first fixing ring 221a and the second fixing ring 221b.

[0089] A third sealing portion 2212 is provided on the first fixing ring 221a, and the third sealing portion 2212 is used to abut against the supporting platform 231 when the supporting platform 231 is located at the first position, thereby cooperating with the first sealing portion 2222 to seal the second fixing ring 221b, the conductive coil 224 and the conductive ring 223 to prevent the plating liquid from contaminating the conductive ring 223 and the conductive coil 224.

[0090] In one embodiment of the present application, a sealing ring is disposed on the carrying platform 231 , and when the carrying platform 231 is located at the first position, the sealing ring abuts against the third sealing portion 2212 .

[0091] It should be noted that the rotating shaft 32 of the hollow rotating motor abuts against the side wall of the through hole on the supporting base 236, thereby sealing the connection between the rotating shaft 32 and the supporting base 236 to prevent the plating liquid from entering the rotating chamber 211, and further preventing the plating liquid from entering the second installation chamber 2221 through the guide hole and the gap between the multiple conductive contacts 2232 to contaminate the conductive ring 223 and the conductive coil 224.

[0092] In one embodiment of the present application, a guiding inclined surface 2213 is provided on the second fixing ring 221 b , and the guiding inclined surface 2213 is arranged at an angle with the direction from the second position to the first position.

[0093] The second fixing ring 221b is provided with a guiding inclined surface 2213 so that the second fixing ring 221b has a guiding function for the target wafer 60. When the center of the target wafer 60 deviates from the center of the carrier 231, the guiding inclined surface 2213 guides the target wafer 60 during the process of the carrier 231 moving from the second position to the first position, so as to guide the center of the target wafer 60 to move to the center of the carrier 231.

[0094] In one embodiment of the present application, the electroplating device further includes a liquid level regulating mechanism, which is connected to the interior of the electroplating housing 10 and is used to adjust the liquid level of the electroplating solution.

[0095] When the carrier assembly 23 is located at the first position and the target wafer 60 needs to be electroplated, the liquid level regulating mechanism adjusts the liquid level of the electroplating solution to increase and immerses the target wafer 60 in the electroplating solution to facilitate the electroplating process on the target wafer 60 .

[0096] After the carrier component 23 is located at the first position and the electroplating process on the target wafer 60 is completed, the liquid level regulating mechanism adjusts the liquid level of the electroplating liquid to drop and exposes the target wafer 60 to the electroplating liquid, so that the rotating component 21 drives the carrier component 23 to drive the target wafer 60 to rotate, thereby separating the excess electroplating liquid on the target wafer 60 from the target wafer 60.

[0097] Specifically, a plating liquid inlet 14 and a plating liquid outlet 15 are provided at the bottom of the second plating shell 10b, and the plating liquid inlet 14 and the plating liquid outlet 15 are both connected to the plating chamber 11, wherein the plating liquid inlet 14 is connected to a liquid injection pump (not shown in the figure), and the plating liquid outlet 15 is connected to a liquid outlet pump (not shown in the figure). The liquid injection pump is used to inject plating liquid into the plating chamber 11, and the liquid outlet pump is used to discharge the plating liquid in the plating chamber 11, so as to adjust the liquid level of the plating liquid in the plating chamber 11. For example, the plating liquid in the plating chamber 11 is discharged by the liquid outlet pump so that the target wafer 60 is located above the liquid level of the plating liquid, and the plating liquid is injected into the plating chamber 11 by the liquid injection pump so that the target wafer 60 is located below the liquid level of the plating liquid.

[0098] In one embodiment of the present application, the spraying mechanism 40 includes an ion exchange component 41 , an anode component 42 , and a cathode component 43 .

[0099] Specifically, the anode assembly 42 and the cathode assembly 43 are respectively connected to the upper and lower sides of the ion exchange assembly 41. The anode assembly 42 is provided with an anode cavity 423. The cathode assembly 43 is arranged opposite to the clamping mechanism 20, and the cathode assembly 43 is provided with a cathode cavity 4311. The cathode assembly 43 is provided with a jet flow channel 4321 connected to the cathode cavity 4311, and the jet is used to make the electroplating solution in the cathode assembly 43 flow to the target wafer 60.

[0100] Under the action of the ion exchange component 41, the metal ions in the anode cavity 423 enter the cathode liquid in the cathode cavity 4311 under the filtration of the ion exchange component 41, and then flow to the surface to be electroplated of the target wafer 60 through the jet flow channel 4321 to perform the electroplating process on the target wafer 60. It should be noted that the cathode liquid is a plating liquid used for electroplating the target wafer 60.

[0101] It should be noted that when the electroplating process is performed on the surface to be electroplated of the target wafer 60, the cathode assembly 43 is spaced apart from the electroplated surface of the target wafer 60 on one side facing the target wafer 60, such as the spacing between the surface to be electroplated and the ion plating plate 432 is between 1-10 mm, and preferably, the spacing between the surface to be electroplated and the ion plating plate 432 is 3 mm.

[0102] In one embodiment of the present application, see Figures 12 to 16 The anode assembly 42 includes an anode shell 421 and an anode plate 422 .

[0103] The anode housing 421 is fixedly connected to the top of the ion exchange assembly 41. The anode plate 422 is installed in the anode housing 421 by bolts, and the diameter of the anode plate 422 is equal to the diameter of the target wafer 60. The anode plate 422 is made of phosphor copper, and an anode cavity 423 is formed between the anode plate 422 and the anode housing 421.

[0104] A first flow channel 70 is provided on the anode housing 421 and the anode plate 422 . The first flow channel 70 is connected to the anode cavity 423 , and is used to allow the anode liquid to flow into and out of the anode cavity 423 and to increase the contact area between the anode plate 422 and the anode liquid.

[0105] When the anolyte enters the anode cavity 423 from the first flow channel 70, the anolyte flows through the anode plate 422, thereby improving the uniformity of the distribution of metal ions in the anolyte.

[0106] For details, please refer to Figures 13 to 16The first flow channel 70 includes a first liquid inlet channel 71 , a guide channel 72 and a first liquid outlet channel 73 .

[0107] The first liquid inlet channel 71 is disposed at the center of the anode housing 421 and penetrates the anode housing 421 . The first liquid inlet channel 71 is communicated with the anode cavity 423 . The first liquid inlet channel 71 is used to inject the anode liquid into the anode cavity 423 .

[0108] The flow channel 72 is connected to the first liquid inlet channel 71 and the anode cavity 423 and extends from the center of the anode housing 421 toward the outside of the anode housing 421. The flow channel 72 has an opening, and part of the opening of the flow channel 72 is covered by part of the side wall of the anode plate 422.

[0109] During the process of the anode liquid being injected into the anode cavity 423 from the first liquid inlet channel 71, part of the anode liquid directly enters the anode cavity 423 from the first liquid inlet channel 71, and another part of the anode liquid enters the guide channel 72. Since the partial opening of the guide channel 72 is covered by part of the side wall of the anode plate 422, when the anode liquid flows in the guide channel 72, the contact area between the anode plate 422 and the anode liquid is increased, thereby facilitating improving the uniformity of mixing of metal ions in the anode liquid.

[0110] The first liquid outlet channel 73 is disposed in the anode shell 421 and communicated with the guide channel 72 . As the anode liquid is continuously injected from the first liquid inlet channel 71 , the anode liquid in the anode cavity 423 is discharged from the anode cavity 423 through the first liquid outlet channel 73 .

[0111] In one embodiment of the present application, there are multiple first liquid outlet channels 73 , and the multiple first liquid outlet channels 73 are evenly spaced along the circumference of the anode housing 421 . Preferably, there are twelve first liquid outlet channels 73 .

[0112] In one embodiment of the present application, the guide channel 72 includes a first guide channel 721 and a second guide channel 722 .

[0113] The first flow guiding channel 721 extends along the radial direction of the anode shell 421 and has a second opening 7211 . The second opening 7211 of the first flow guiding channel 721 is in communication with the anode cavity 423 .

[0114] The second flow guiding channel 722 is annularly disposed on the anode housing 421 and communicates with the first flow guiding channel 721, wherein the second flow guiding channel 722 has a third opening 7221, and the third opening 7221 is blocked by a portion of the side wall of the anode plate 422. There are multiple second flow guiding channels 722, and the multiple second flow guiding channels 722 extend along the radial direction of the anode housing 421.

[0115] Among the anode liquid entering the guide channel 72, part of the anode liquid directly enters the anode cavity 423 from the first guide channel 721, and another part of the anode liquid enters multiple second guide channels 722, and the anode liquid entering the second guide channel 722 enters the anode cavity 423 from the first guide channel 721, thereby improving the uniformity of mixing of metal ions in the anode liquid.

[0116] It should be noted that the anode plate 422 and the plurality of second guide channels 722 are coaxially arranged, and the diameter of the second guide channel 722 located at the outermost side of the anode housing 421 is equal to the diameter of the anode plate 422 .

[0117] Preferably, in the present application, the number of the second conducting flow channels is 6, and the 6 second guiding channels 722 are coaxially arranged.

[0118] In another embodiment of the present application, the guide channel 72 extends in a spiral shape along the radial direction of the anode shell 421 .

[0119] Specifically, when the flow guiding channel 72 extends in a spiral shape, the diameter of the flow guiding channel 72 is equal to the diameter of the anode plate 422 , and the inner port of the flow guiding channel 72 is connected to the first liquid inlet channel 71 , and the flow guiding channel 72 is connected to the anode cavity 423 .

[0120] In one embodiment of the present application, there are multiple anode plates 422 , and each anode plate 422 is a fan-shaped structure. The multiple anode plates 422 are evenly spaced along the circumference of the anode housing 421 .

[0121] Preferably, the number of the anode plates 422 is 6, and the 6 anode plates 422 are evenly spaced along the circumference of the anode housing 421 .

[0122] In the present application, in the technical solution in which the guide channel 72 includes a first guide channel 721 and a second guide channel 722, a third guide channel 74 is formed between any two adjacent anode plates 422 among the six anode plates 422, and the position of the third guide channel 74 corresponds to the position of the first guide channel 721, and the third guide channel 74 connects the first guide channel 721 and the anode cavity 423.

[0123] In the present application, in the technical solution when the guide channel 72 extends in a spiral shape, the third guide channel 74 is used to connect the guide channel 72 with the anode cavity 423 .

[0124] In one embodiment of the present application, an anode liquid inlet 16 and an anode liquid outlet 17 are provided on the top of the first electroplating shell 10a. The position of the anode liquid inlet 16 corresponds to the position of the first liquid inlet channel 71, and the anode liquid inlet 16 is connected to the first liquid inlet channel 71, and the anode liquid outlet 17 is connected to the first liquid outlet channel 73. After the anode liquid enters the first liquid inlet channel 71 and the anode cavity 423 through the anode liquid inlet 16, it is discharged from the anode cavity 423 through the first liquid outlet channel 73 and the anode liquid outlet 17.

[0125] In one embodiment of the present application, each anode plate 422 is provided with an air guide hole 4221 , and the anode shell 421 is provided with an exhaust hole 4211 , and the air guide hole 4221 is communicated with the exhaust hole 4211 .

[0126] Specifically, the air guide hole 4221 penetrates the anode plate 422, and the anode shell 421 is provided with an exhaust hole 4211, which penetrates the anode shell 421 and is communicated with the exhaust hole 4211. The air contained in the anode liquid in the anode cavity 423 is discharged from the anode cavity 423 through the air guide hole 4221 and the exhaust hole 4211.

[0127] In another embodiment of the present application, each anode plate 422 is provided with a guide portion 4212 on one side close to the anode cavity 423, the guide portion 4212 is connected to the air guide hole 4221, and the guide portion 4212 is formed by rotating a preset line segment around the axis of the air guide hole 4221, and the diameter of the end of the guide portion 4212 away from the air guide hole 4221 is larger than the diameter of the end of the guide portion 4212 close to the guide portion 4212. The guide portion 4212 is used to guide the air in the anode liquid into the guide hole, and then discharged from the exhaust hole 4211.

[0128] In one embodiment of the present application, see Figure 12 to Figure 14 The cathode assembly 43 includes a cathode shell 431 and a spray plate 432 .

[0129] The cathode housing 431 is connected to the side of the ion exchange assembly 41 away from the anode housing 421, and is provided with a cathode cavity 4311. The spray plate 432 is connected to the side of the cathode housing 431 away from the spray plate 432, and is provided with a jet flow channel 4321, and the jet flow channel 4321 is used to spray the cathode liquid onto the surface to be electroplated of the target wafer 60. There are multiple jet flow channels 4321, and the multiple jet flow channels 4321 are evenly distributed on the spray plate 432 and connected to the cathode cavity 4311, and the diameter of the area where the multiple jet flow channels 4321 are distributed on the spray plate 432 is equal to the diameter of the target wafer 60.

[0130] Specifically, the electroplating solution flows into the cathode cavity 4311 through the second flow channel 80 , and the second flow channel 80 sequentially penetrates the anode housing 421 , the ion exchange assembly 41 and the cathode housing 431 and then communicates with the cathode cavity 431 .

[0131] See also Figure 13 to Figure 14 The second flow channel 80 includes a second liquid inlet channel 81 , a connecting flow channel 82 , and a second liquid outlet channel 83 .

[0132] The second liquid inlet channel 81 is provided in the anode housing 421 and is located outside the first liquid inlet channel 71. The communication channel 82 is provided in the ion exchange mechanism and communicates with the second liquid inlet channel 81. The second liquid outlet channel 83 is provided in the cathode housing 431 and communicates with the cathode cavity 4311 and the communication channel 82.

[0133] The number of the second liquid inlet channels 81, the connecting channels 82, and the second liquid outlet channels 83 are all multiple, and the number of the second liquid inlet channels 81, the connecting channels 82, and the second liquid outlet channels 83 are equal. Each connecting channel 82 is used to connect the corresponding second liquid inlet channel 81 and the second liquid outlet channel 83.

[0134] Preferably, in the present application, the number of the second liquid inlet channel 81 , the connecting flow channel 82 , and the second liquid outlet channel 83 are all 12.

[0135] In one implementation of this application, see Figure 1 and Figure 2 A cathode liquid inlet 18 is provided on the top of the first electroplating housing 10a, and a plurality of liquid flow channels corresponding to the positions of the plurality of second liquid inlet channels 81 are provided on the top wall of the first electroplating housing 10a, each liquid flow channel is connected to the corresponding second liquid inlet channel 81, and one end of each liquid flow channel away from the second liquid inlet channel 81 is connected to the cathode liquid inlet 18. The cathode liquid enters the second liquid inlet channel 81 from the cathode liquid inlet 18.

[0136] In one embodiment of the present application, see Fig.13 and Fig.14 The ion exchange assembly 41 includes a mounting frame 411 and an ion exchange membrane 412 .

[0137] The mounting frame 411 is connected to the anode housing 421 and the cathode housing 431. The ion exchange membrane 412 is mounted on the mounting frame 411, and the anode cavity 423 is formed between the ion exchange membrane 412 and the anode plate 422. The ion exchange membrane 412 is used to exchange metal ions in the anode liquid into the cathode cavity 4311.

[0138] In one implementation of this application, please refer to Figures 1 to 3 The sealing mechanism 50 includes a sealing door 51 , a first driving member 52 and a second driving member 53 .

[0139] In this application, the first direction is Figure 1 The horizontal direction in the second direction is Figure 1 The first direction and the second direction are perpendicular to each other.

[0140] The sealing door 51 is connected to the first driving member 52, and the first driving member 52 is used to drive the sealing door 51 to move in the first direction, so that the sealing door 51 opens and covers the first opening 12. The second driving member 53 is fixedly connected to the first driving member 52 through the fixing seat 54, and the second driving member 53 is used to drive the first driving member 52 to drive the sealing door 51 to move in the second direction.

[0141] The above are only preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. An electroplating device, characterized in that: include: The electroplated housing is provided with a first opening; A clamping mechanism, rotatably connected to the housing, for clamping a target wafer; A rotating mechanism, disposed outside the housing and connected to the clamping mechanism, for driving the clamping mechanism to rotate; A spraying mechanism, connected to the housing and abutting against the clamping mechanism, the spraying mechanism and the clamping mechanism are coaxially arranged, and in the vertical direction, the spraying mechanism is located above the target wafer, and the spraying mechanism is used to inject electroplating liquid into the surface to be electroplated of the target wafer; A sealing mechanism is used to open or close the first opening.

2. The electroplating device according to claim 1, characterized in that: The spraying mechanism comprises: Ion exchange components; an anode assembly connected to the ion exchange assembly and provided with an anode cavity; A cathode assembly is connected to the side of the ion exchange assembly facing away from the anode assembly and is arranged opposite to the clamping mechanism. The cathode assembly is provided with a cathode cavity, and a jet flow channel connected to the cathode cavity is provided on the cathode assembly. The jet flow channel is used to make the plating solution in the cathode assembly flow downward along the vertical direction toward the target wafer.

3. The electroplating device according to claim 2, characterized in that: The anode channel comprises: an anode housing connected to the ion exchange assembly; An anode plate is installed in the anode plate, and the anode cavity is formed between the anode plate and the anode shell.

4. The electroplating device according to claim 3, characterized in that: The anode shell and the anode plate are provided with a first flow channel, which is communicated with the anode cavity and is used to allow the anode liquid to flow into and out of the anode cavity and to increase the contact area between the anode plate and the anode liquid.

5. The electroplating device according to claim 4, characterized in that: The anode plate is provided with an air guide hole, the anode shell is provided with an exhaust hole, and the air guide hole is communicated with the exhaust hole.

6. The electroplating device according to claim 5, characterized in that: The cathode assembly comprises: a cathode housing connected to a side of the ion exchange assembly facing away from the anode housing and provided with the cathode cavity; The spraying plate is connected to the side of the cathode shell facing away from the spraying plate and is provided with a spraying flow channel.

7. The electroplating device according to claim 6, characterized in that: The electroplating solution flows into the cathode cavity through the second flow channel, and the second flow channel sequentially penetrates the anode shell, the ion exchange component and the cathode shell and then communicates with the cathode cavity.

8. The electroplating device according to claim 7, characterized in that: The ion exchange component comprises: A mounting frame connected to the anode housing and the cathode housing; An ion exchange membrane is mounted on the mounting frame, and the anode cavity is formed between the ion exchange membrane and the anode plate.

9. The electroplating device according to claim 1 or 8, characterized in that: The clamping mechanism comprises: A rotating assembly, rotatably connected in the housing and connected to the rotating mechanism; A conductive component connected to the rotating component; A bearing assembly, slidably connected to the rotating assembly, and having a first position and a second position relative to the rotating assembly; When the carrying component is located at the first position, the carrying component and the conductive component jointly clamp the target wafer, and the rotating mechanism drives the carrying component and the conductive component to rotate synchronously through the rotating component; When the carrying component is located at the second position, the carrying component drives the target wafer to be separated from the conductive component.

10. The electroplating device according to claim 9, characterized in that: The bearing assembly comprises: A carrier platform, slidably connected to the rotating component, and having the first position and the second position; A support column protrudes from the carrier platform and is used to support the target wafer; A lifting shaft, rotatably connected to the carrying platform, the lifting shaft extending away from a side of the carrying platform to the outside of the shell, and the lifting shaft is used to drive the carrying platform to move between the first position and the second position; The lifting drive member is arranged on the outer side of the shell and connected to the end of the lifting shaft away from the supporting platform, and is used for driving the lifting shaft to drive the supporting platform to move.

11. The electroplating device according to claim 10, characterized in that: There are multiple pillars, and the multiple pillars are evenly spaced along the circumference of the supporting platform.

12. The electroplating device according to claim 11, characterized in that: The bearing assembly further comprises: The bearing base is connected to the bearing platform and a rotating cavity is formed between the bearing base and the bearing platform. A part of the rotating component is accommodated in the rotating cavity, and another part is located outside the rotating cavity.

13. The electroplating device according to claim 12, characterized in that: The rotating assembly comprises: A rotating plate, accommodated in the rotating chamber and connected to the rotating mechanism; A guide member connected to the rotating plate, and the guide member passes through the bearing platform and is connected to the conductive component; A conductive rod is sleeved on the outer side of the lifting shaft and is rotatably connected to the lifting shaft, and is connected to the side of the rotating plate away from the guide member, and the conductive rod is used to transmit current to the target wafer through the rotating plate, the guide member, and the clamping assembly.

14. The electroplating device according to claim 13, characterized in that: The rotating plate comprises: A non-metallic rotating plate connected to the rotating mechanism; The metal rotating plate is connected to the non-metal rotating plate, the guide member is connected to the metal rotating plate, and the conductive rod is connected to the metal rotating plate.

15. The electroplating device according to claim 14, characterized in that: The conductive component comprises: A fixing ring connected to the guide rod and provided with a first mounting cavity; A sealing member is installed in the first installation cavity, and a second installation cavity is provided on the sealing member; A conductive ring, installed in the second installation cavity and abutting against the fixing ring; When the carrier is located at the first position, the seal and the conductive ring are both in contact with the target wafer, and along the radial direction of the target wafer, the contact portion between the seal and the target wafer is located on the inner side of the conductive ring and the target wafer.

16. The electroplating device according to claim 15, characterized in that: A conductive contact is convexly provided on the inner side of the conductive ring, and the conductive contact is used to abut against the target wafer. There are multiple conductive contacts, and the multiple conductive contacts are evenly spaced along the circumference of the conductive ring.

17. The electroplating device according to claim 16, characterized in that: Also includes: The liquid level regulating mechanism is communicated with the interior of the electroplating shell and is used for regulating the liquid level height of the electroplating solution.

18. The electroplating device according to claim 1, characterized in that: The sealing mechanism comprises: A sealing door, used for opening and covering the first opening; A first driving member, connected to the sealing door, for driving the sealing door to move in a first direction; a second driving member, connected to the first driving member, and used to drive the first driving member to drive the sealing door to move in a second direction; The first direction and the second direction are perpendicular to each other.

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