Online detection method and device for solar cell with passivation contact structure

Abstract

The invention discloses an online detection method and device for a solar cell with a passivation contact structure. The online detection method comprises the following steps: selecting a battery substrate with a passivation contact structure as a sample to be detected from battery substrates treated by a passivation contact structure process, and in the passivation contact structure forming process, enabling part of doped elements to penetrate through the passivation contact structure to enter the battery substrate; removing the passivation contact structure of the sample to be detected; detecting the actual square resistance of the to-be-detected sample from which the passivation contact structure is removed; according to the incidence relation between the resistivity and the square resistance interval and the actual resistivity of the battery base body, the actual square resistance interval corresponding to the battery base body is determined, according to the actual square resistance interval and the detected actual square resistance, the performance of the passivation contact structure is analyzed, and the condition of a battery production line where the sample to be detected is located is indicated. The performance of the passivation contact structure can be detected on line, and problems existing in related processes of the passivation contact structure in the production process can be fed back in time.

Description

Technical Field

[0001] The invention relates to an online detection method and device for a solar cell with a passivation contact structure. Background Art

[0002] For solar cells with passivated contact structures, such as TOPCon cells, the performance of the passivated contact structure, such as contact performance and passivation performance, will directly affect the overall performance of the cell. Therefore, the production process of solar cells with passivated contact structures can be guided by the performance testing of the passivated contact structure.

[0003] At present, the performance of the passivation contact structure is mainly tested by offline testing methods such as electrochemical voltage capacitance (ECV) to detect the diffusion concentration and junction depth of the battery, the photoluminescence spectrum (PL) of the battery, etc. The existing offline testing methods require manual wafer removal, and the test time is relatively long, and the information feedback speed cannot keep up with the battery production process requirements. Therefore, there is an urgent need for a method for online testing of passivation contact structure solar cells that can provide real-time feedback on the performance of the passivation contact structure. Summary of the invention

[0004] In view of this, the present invention provides an online detection method and device for a passivated contact structure solar cell, which can detect the performance of the passivated contact structure online and can provide timely feedback on the performance of the passivated contact structure produced by the production process, so as to facilitate technicians to promptly discover problems existing in the passivated contact structure and timely adjust the production process of the passivated contact structure.

[0005] In order to solve the above technical problems, the present invention provides the following technical solutions:

[0006] In a first aspect, the present invention provides an online detection method for a solar cell with a passivation contact structure, comprising:

[0007] Step 1, selecting a battery substrate having a passivation contact structure from the battery substrates processed by the passivation contact structure process as a sample to be tested, wherein, in the process of forming the passivation contact structure, part of the doping elements pass through the passivation contact structure and enter the battery substrate;

[0008] Step 2, removing the passivation contact structure of the sample to be tested;

[0009] Step 3, detecting the actual sheet resistance of the sample to be detected with the passivation contact structure removed;

[0010] Step 4: Determine the actual block resistance range corresponding to the battery matrix by utilizing the pre-constructed correlation between the resistivity and the block resistance range and the actual resistivity of the battery matrix; analyze the performance of the passivation contact structure based on the actual block resistance range and the detected actual block resistance to indicate the status of the battery production line where the sample to be tested is located.

[0011] Optionally, before step 1, the method further includes: randomly selecting a target battery substrate, and preparing a passivation contact structure on one or two main surfaces of the target battery substrate in a passivation contact structure process;

[0012] Step 1 includes: determining a target battery substrate having a passivation contact structure prepared on one or both main surfaces as a sample to be tested;

[0013] or,

[0014] Before step 1, the method further includes: in a passivation contact structure process, preparing a passivation contact structure on one or two main surfaces of the battery substrate;

[0015] Step 1 includes: randomly selecting a battery substrate having one or two main surfaces with a passivation contact structure as a sample to be tested.

[0016] Optionally, preparing a passivation contact structure on the target battery substrate or a main surface of the battery substrate includes:

[0017] Sequentially forming a stacked tunneling oxide layer and an intrinsic polysilicon layer on the target battery substrate or one main surface of the battery substrate;

[0018] Doping elements are diffused into the intrinsic polysilicon layer, wherein a portion of the diffused doping elements passes through the tunneling oxide layer into the target battery substrate or a main surface of the battery substrate.

[0019] Optionally, a passivation contact structure is prepared on both main surfaces of the target battery substrate or the battery substrate, including:

[0020] Sequentially forming a stacked tunneling oxide layer and an intrinsic polysilicon layer on the target battery substrate or two main surfaces of the battery substrate;

[0021] Doping elements are diffused into the intrinsic polysilicon layer at two main surfaces, wherein part of the diffused doping elements pass through the tunneling oxide layer into the target battery substrate or the two main surfaces of the battery substrate.

[0022] Optionally, step 2 includes:

[0023] transporting the sample to be tested to a functional layer removal process in a solar cell production line;

[0024] The passivation contact structure of the sample to be detected is removed in the functional layer removal step.

[0025] Optionally, step 4 includes:

[0026] When the detected actual sheet resistance falls within the actual sheet resistance range, it is determined that the performance of the passivation contact structure is excellent and the battery production line where the sample to be detected is located is normal;

[0027] When the detected actual sheet resistance does not fall within the actual sheet resistance range, it is determined that the performance of the passivation contact structure is abnormal, and a prompt message indicating that the production line where the sample to be detected is located is abnormal is issued.

[0028] Optionally, the correlation between the resistivity and the sheet resistance range satisfies the following two equations:

[0029] Relationship (1) indicating the relationship between the resistivity and the minimum value in the sheet resistance interval:

[0030]

[0031] Among them, r i Represents resistivity; R i-min It corresponds to the resistivity r i The minimum value in the sheet resistance range;

[0032] Relationship (2) indicating the relationship between the resistivity and the maximum value in the sheet resistance interval:

[0033]

[0034] Among them, r i Represents resistivity; R i-max It corresponds to the resistivity r i The maximum value in the square resistance range.

[0035] Optionally, the determining an actual sheet resistance interval corresponding to the battery matrix includes:

[0036] Substitute the actual resistivity of the battery matrix into the equation (1) and the equation (2) to calculate the minimum and maximum values ​​of the actual block resistance range.

[0037] Optionally, step 3 comprises: detecting the actual sheet resistance of the sample to be detected at different temperatures after the passivation contact structure (20) is removed.

[0038] Optionally, step 4 further includes: further analyzing the performance of the passivation contact structure in combination with the pre-established correlation relationship between the resistivity and the sheet resistance variance threshold;

[0039] The correlation between the resistivity and the sheet resistance variance threshold satisfies the following equation (3):

[0040] The relationship between the resistivity and the sheet resistance variance threshold is shown in equation (3):

[0041] w i =(0.03×r i +0.02)×100% (3)

[0042] Among them, r i Represents resistivity; w i It corresponds to the resistivity r i The sheet resistance variance threshold.

[0043] Optionally, step 4 further comprises: calculating the sheet resistance change rate of the sample to be tested with the passivation contact structure removed according to the actual sheet resistance at different temperatures;

[0044] The performance of the passivation contact structure is further analyzed in combination with the square resistance change rate.

[0045] Optionally, the battery substrate is an N-type silicon substrate;

[0046] The doping element included in the passivation contact structure is an N-type doping element.

[0047] In a second aspect, an embodiment of the present invention provides an online detection method for a solar cell with a passivation contact structure, comprising:

[0048] Outputting a first control instruction indicating selection of a sample to be tested to a cell clamping device on a solar cell production line, so that the cell clamping device clamps the sample to be tested;

[0049] Outputting a second control instruction instructing transportation to the cell clamping device, so that the cell clamping device transports the sample to be tested to a functional layer removal process in the solar cell production line;

[0050] Outputting a third control instruction instructing to remove the entire surface passivation contact structure to the functional layer removal process, so as to remove the passivation contact structure of the sample to be tested in the functional layer removal process;

[0051] Driving the detection device to detect the actual sheet resistance of the sample to be detected with the passivation contact structure removed;

[0052] According to the pre-constructed correlation between the resistivity and the block resistance range and the actual resistivity of the battery matrix detected by the detection module, the actual block resistance range corresponding to the battery matrix is ​​determined, and the performance of the passivation contact structure is analyzed based on the actual block resistance range and the detected actual block resistance to indicate the status of the battery production line where the sample to be detected is located.

[0053] In a third aspect, an embodiment of the present invention provides an online detection device for a solar cell with a passivated contact structure, comprising: a control module, a detection module and an analysis module, wherein:

[0054] The control module is used to output a first control instruction for instructing selection of a sample to be detected to a cell clamping device on a solar cell production line, and after the cell clamping device clamps the sample to be detected, output a second control instruction for instructing transportation to the cell clamping device, so that the cell clamping device transports the sample to be detected to a functional layer removal process in the solar cell production line;

[0055] The control module is further used to output a third control instruction instructing to remove the entire passivation contact structure to the functional layer removal process, so as to remove the passivation contact structure of the sample to be tested in the functional layer removal process;

[0056] The detection module is used to drive the detection device to detect the actual sheet resistance of the sample to be detected with the passivation contact structure removed;

[0057] The analysis module is used to determine the actual block resistance range corresponding to the battery matrix based on the pre-constructed correlation between the resistivity and the block resistance range and the actual resistivity of the battery matrix detected by the detection equipment, and analyze the performance of the passivation contact structure based on the actual block resistance range and the detected actual block resistance to indicate the status of the battery production line where the sample to be detected is located.

[0058] In a fourth aspect, an embodiment of the present invention provides an electronic device, the electronic device comprising:

[0059] one or more processors;

[0060] a storage device for storing one or more programs,

[0061] When the one or more programs are executed by the one or more processors, the one or more processors implement the method provided in the above-mentioned second aspect embodiment.

[0062] In a fifth aspect, an embodiment of the present invention provides a computer-readable medium having a computer program stored thereon, and when the program is executed by a processor, the method provided in the embodiment of the second aspect described above is implemented.

[0063] The technical solution of the first aspect of the above invention has the following advantages or beneficial effects:

[0064] Since the performance of solar cells of the same batch or produced at a similar time on the same solar cell production line is generally similar, based on this, the technical solution provided by the embodiment of the present invention uses the battery substrate processed by the passivation contact structure process on the selected solar cell production line as the sample to be detected, detects the actual block resistance of the sample to be detected after removing the passivation contact structure of the sample to be detected, and uses the pre-constructed correlation relationship between the resistivity and the block resistance range and the actual resistivity of the battery substrate to determine the actual block resistance range corresponding to the battery substrate, and then analyzes the performance of the passivation contact structure according to the actual block resistance range and the detected actual block resistance to indicate the status of the battery production line where the sample to be detected is located, that is, by analyzing the actual block resistance of the sample to be detected belonging to the solar cell production line, the status of the solar cell production line where the sample to be detected is located is obtained, and the performance of the passivation contact structure produced by the solar cell production line and the status of the solar cell production line can be analyzed online, so as to be able to timely feedback to the technical personnel on the performance of the passivation contact structure, the production status of the solar cell production line and the problems existing in the process related to the passivation contact structure during the production process, so that the technical personnel can timely discover the problems with the passivation contact structure and timely adjust the production process of the passivation contact structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0065] Figure 1 1. It is a schematic diagram of the main process of the online detection method of the solar cell with a passivated contact structure according to an embodiment of the present invention;

[0066] Figure 2 is a cross-sectional schematic diagram of a first structure obtained after a battery substrate according to an embodiment of the present invention is processed through a passivation contact structure process;

[0067] Figure 3 is a cross-sectional schematic diagram of a second structure obtained after a battery substrate according to an embodiment of the present invention is processed through a passivation contact structure process;

[0068] Figure 4 is a cross-sectional schematic diagram of a first structure obtained after processing in step S102 according to an embodiment of the present invention;

[0069] Figure 5 is a cross-sectional schematic diagram of a second structure obtained after processing in step S102 according to an embodiment of the present invention;

[0070] Figure 6 It is a main flow chart of an online detection method for a solar cell with a passivated contact structure applied to a server or a controller according to an embodiment of the present invention.

[0071] Reference numerals:

[0072] 10 - battery substrate; 20 - passivation contact structure; 21 - tunneling oxide layer; 22 - doped polysilicon layer; 30 - doped crystalline silicon layer; 40 - doped silicon glass layer. DETAILED DESCRIPTION

[0073] For solar cells involving a passivation contact structure, the passivation contact structure allows majority carriers to pass through and isolates minority carriers, thereby achieving a low recombination function. Therefore, for solar cells with a passivation contact structure, such as TOPCon cells, the excellent tunnel passivation effect mainly comes from the cooperation between the tunnel oxide layer and the doped polysilicon layer in the passivation contact structure. For example, the low open circuit voltage (Voc) of a solar cell with a passivation contact structure is usually caused by severe damage to the tunnel oxide layer. In addition, solar cells with normal Voc and low fill factor (FF) are usually caused by the tunnel oxide layer being too thick, resulting in poor carrier transmission. Therefore, the optimization of the production process of the passivation contact structure helps to improve the yield of solar cells with a passivation contact structure. If the performance of the passivation contact structure can be detected in a timely and convenient manner during the production process of solar cells, the prompt information of the abnormal production line can be indicated so that the technicians can handle the production line in time, and the technicians can also be guided to optimize the production process of the passivation contact structure. Based on this, an embodiment of the present invention provides an online detection method for solar cells with a passivation contact structure.

[0074] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0075] It should be noted that the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0076] It is worth noting that the process steps involved in the online detection method of the solar cell with a passivated contact structure provided by the embodiment of the present invention can be implemented in conjunction with an execution program and equipment on an existing production line, and the execution program is carried in the form of software or a plug-in on a controller or a processor or a server for controlling the solar cell. In addition, some process steps (for example, the association between the resistivity and the block resistance interval constructed, the actual block resistance interval corresponding to the battery matrix is ​​determined based on the pre-constructed association between the resistivity and the block resistance interval and the actual resistivity of the battery matrix, and the performance of the passivated contact structure is analyzed based on the actual block resistance interval and the detected actual block resistance to indicate the status of the battery production line where the sample to be detected is located, etc.) can also be implemented in the form of software or a plug-in through a terminal device such as a laptop, a desktop computer, a mobile phone, a tablet, etc.

[0077] like Figure 1 As shown, the online detection method of the solar cell with a passivated contact structure may include the following steps:

[0078] Step S101: Select a battery substrate 10 having a passivation contact structure 20 from the battery substrates 10 processed by the passivation contact structure process as a sample to be tested, wherein in the passivation contact structure forming process, part of the doping elements pass through the passivation contact structure 20 and enter the battery substrate.

[0079] The battery substrate treated by the passivation contact structure process can be Figure 2 As shown, a passivation contact structure 20 is formed on one main surface of the battery substrate 10, or Figure 3 As shown, a passivation contact structure 20 is formed on two main surfaces of the battery substrate 10. Figure 2 and Figure 3As shown, the passivation contact structure generally includes a tunneling oxide layer 21 and a doped polysilicon layer 22 that are stacked. Specifically, the passivation contact structure can be formed by depositing the tunneling oxide layer 21 on one or two main surfaces of the battery substrate 10, and depositing an intrinsic polysilicon layer on the tunneling oxide layer 21. The surface of the intrinsic polysilicon layer is oxidized to form an intrinsic silicon glass layer, and the doping elements are doped into the intrinsic polysilicon layer by diffusion to form a doped polysilicon layer 22. In the process of forming the doped polysilicon layer 22 by the diffusion method, part of the doping elements pass through the tunneling oxide layer 21 to reach the battery substrate 10 to form a low-doped doped crystalline silicon layer 30 (the crystalline silicon type of the doped crystalline silicon layer 30 is determined by the crystalline silicon type of the battery substrate 10, which can be single crystal silicon or polycrystalline silicon), and part of the doping elements remain in the silicon glass layer to form a doped silicon glass layer 40. The tunnel oxide layer 21 and the doped polysilicon layer 22 may be formed by any existing deposition method such as atomic layer deposition, low temperature plasma vapor deposition, chemical vapor deposition, physical vapor deposition, etc. Figure 2 and Figure 3 The structure can also be formed by other existing methods. The specific processing method of the passivation contact structure process is not limited here, as long as it can be formed Figure 2 or Figure 3 The structure shown can detect the performance of the passivation contact structure through the online detection solution provided by the embodiment of the present invention.

[0080] Among them, the battery substrate 10 can be an N-type silicon substrate or a P-type silicon substrate; accordingly, for an N-type silicon substrate, the doping elements contained in the doped polysilicon layer 22 in the passivation contact structure 20 are generally N-type doping elements such as phosphorus, arsenic, etc.; for a P-type silicon substrate, the doping elements contained in the doped polysilicon layer 22 in the passivation contact structure 20 are generally P-type doping elements such as boron, aluminum, etc. Preferably, the online detection solution provided in the embodiment of the present invention is for an N-type silicon substrate, and the doping elements contained in the doped polysilicon layer 22 in the passivation contact structure 20 are generally N-type doping elements such as phosphorus, arsenic, etc.

[0081] It can be understood that the above-mentioned passivation contact structure process is a process involved in preparing a passivation contact structure in an existing passivation contact structure solar cell.

[0082] Among them, the sample to be detected involved in the embodiment of the present invention can include Figure 2 The structure shown or contains Figure 3 The intermediate structure of the solar cell of the structure shown. Preferably, the sample to be tested used in the embodiment of the present invention comprises Figure 3 The structure shown. Figure 3 The structure shown enables the actual sheet resistance of the sample to be tested in subsequent testing to more accurately reflect the performance of the passivation contact structure.

[0083] Selecting samples to be tested from the battery matrix that has been processed through the passivation contact structure process can, on the one hand, meet the needs of subsequent testing. On the other hand, it minimizes the number of processing steps that the samples to be tested have undergone, so that the test results can guide the adjustment of subsequent processes and stop the production of subsequent processes in time to reduce material waste.

[0084] Furthermore, in order to obtain the sample to be tested in step S101, before the above step S101, there may be multiple processing methods for the battery matrix.

[0085] Specifically, for the first processing method of the battery substrate 10: randomly select a target battery substrate, and in the passivation contact structure process, prepare a passivation contact structure on both main surfaces of the target battery substrate; accordingly, in step S101, it can be determined that the target battery substrate with passivation contact structures prepared on both main surfaces is the sample to be tested.

[0086] The second processing method for the battery substrate 10: in the passivation contact structure process, a passivation contact structure 20 is prepared on both main surfaces of the battery substrate 10; accordingly, the specific implementation method of step S101 is: randomly selecting a battery substrate 10 with passivation contact structures 20 prepared on both main surfaces as a sample to be tested.

[0087] A third processing method for the battery substrate 10 is: randomly selecting a target battery substrate, and in the passivation contact structure process, preparing a passivation contact structure on a main surface of the target battery substrate; accordingly, in step S101, a target battery substrate having a passivation contact structure prepared on a main surface can be determined as a sample to be tested.

[0088] A fourth processing method for the battery substrate 10: in the passivation contact structure process, a passivation contact structure 20 is prepared on a main surface of the battery substrate 10; accordingly, a specific implementation method of step S101: randomly select a battery substrate 10 having a main surface with a passivation contact structure 20 as a sample to be tested.

[0089] Among them, the first and second treatment methods of the battery matrix are aimed at Figure 3 The third and fourth treatment methods of the battery substrate 10 are for Figure 2 The structure shown.

[0090] It should be noted that in step S101, a passivation contact structure process in a solar cell production line is formed. Figure 2 In order to make the sample to be tested contain Figure 3As shown in the structure, before this step, the first processing method is performed on the battery substrate 10, that is, the target battery substrate as the sample to be detected is first selected, and then in the passivation contact structure process, a tunneling oxide layer 21 and a doped polysilicon layer 22 are formed only on the double main surfaces of the target battery substrate, and a doped crystalline silicon layer 30 and a doped silicon glass layer 40 are formed on the double main surfaces of the target battery substrate. For other battery substrates except the target battery substrate, a passivation contact structure is formed for other battery substrates according to the conventional passivation contact structure process.

[0091] In step S101, a passivation contact structure process in a solar cell production line is formed. Figure 3 The structure shown in FIG. 1 can be processed by the first treatment method for the battery substrate 10 before this step, or the second treatment method for the battery substrate 10 can be directly performed. That is, the passivation contact structure process in the solar cell production line is formed to include Figure 3 In the case of the structure shown in the figure, the target battery substrate can be selected before the passivation contact structure process, and the target battery substrate and other battery substrates can be processed according to the process of the passivation contact structure process. Figure 3 In the case of the structure shown, the sample to be tested can also be selected after the passivation contact structure process.

[0092] In step S101, a passivation contact structure process in a solar cell production line is formed. Figure 2 In the case of the structure shown, the third and fourth processing methods of the battery substrate 10 can also be directly selected.

[0093] Specifically, before step S101, for the first processing method of the battery substrate, the passivation contact structure process is specifically as follows: sequentially forming a stacked tunneling oxide layer 21 and an intrinsic polysilicon layer on the two main surfaces of the target battery substrate; diffusing doping elements into the intrinsic polysilicon layer on the two main surfaces, wherein some of the diffused doping elements pass through the tunneling oxide layer 21 and enter the two main surfaces of the target battery substrate. For the second processing method of the battery substrate 10, the passivation contact structure process is specifically as follows: sequentially forming a stacked tunneling oxide layer 21 and an intrinsic polysilicon layer on the two main surfaces of the battery substrate 10; diffusing doping elements into the intrinsic polysilicon layer on the two main surfaces, wherein some of the diffused doping elements pass through the tunneling oxide layer 21 and enter the two main surfaces of the battery substrate. For the third processing method of the battery substrate, the passivation contact structure process is specifically as follows: sequentially forming a stacked tunneling oxide layer 21 and an intrinsic polysilicon layer on a main surface of the target battery substrate; diffusing doping elements into the intrinsic polysilicon layer, wherein a portion of the diffused doping elements passes through the tunneling oxide layer 21 and enters a main surface of the target battery substrate. For the fourth processing method of the battery substrate 10, the passivation contact structure process is specifically as follows: sequentially forming a stacked tunneling oxide layer 21 and an intrinsic polysilicon layer on a main surface of the battery substrate 10; diffusing doping elements into the intrinsic polysilicon layer, wherein a portion of the diffused doping elements passes through the tunneling oxide layer 21 and enters a main surface of the battery substrate.

[0094] In addition, the samples to be tested include Figure 2 The structure shown in FIG. 1 (i.e., a main surface of a battery substrate 10 is sequentially stacked from the inside to the outside to form a doped crystalline silicon layer 30, a tunneling oxide layer 21, a doped polysilicon layer 22, and a doped silicon glass layer 40), can also select a target battery substrate before the passivation contact structure process, and for the selected target battery substrate, form a doped silicon glass layer 40 in the passivation contact structure process. Figure 2 The structure shown. It is also possible to directly select the sample to be tested after the passivation contact structure process.

[0095] Furthermore, in step S101, the sample to be tested may be selected randomly from a plurality of battery substrates 10 having a passivation contact structure 20, or may be selected at a set time interval from a battery substrate that has been processed by a passivation contact structure process.

[0096] Furthermore, in order to obtain Figure 2 or Figure 3 In the structure shown, during the process of passivating the contact structure of the battery substrate 10, the thickness of the tunneling oxide layer 21 of the sample to be detected is generally limited to between 1nm and 2nm. For example, the thickness of the tunneling oxide layer 21 of the sample to be detected can be 1nm, 1.2nm, 1.5nm, 1.8nm or 2nm.

[0097] Step S102: removing the passivation contact structure of the sample to be tested.

[0098] Specifically, the result obtained for the above step S101 is Figure 2 The structure shown in the figure is as follows: Figure 4 The structure shown in FIG. 1 is that a doped crystalline silicon layer 30 is retained on one main surface of the battery substrate 10. The result obtained in the above step S101 is Figure 3 After this step, the structure shown in Figure 4 or Figure 5 The structure shown in FIG. 1 (the doped crystalline silicon layer 30 is retained on the two main surfaces of the battery substrate 10). Specifically, the following is obtained for the above step S101: Figure 3 The structure shown can be obtained first Figure 5 The structure shown in Figure 5 A main surface of the structure shown is polished to obtain Figure 4 The structure shown.

[0099] The specific implementation of step S102 may be to transport the sample to be tested to the functional layer removal process in the solar cell production line; and remove the passivation contact structure of the sample to be tested in the functional layer removal process. It is worth noting that the functional layer removal process in the solar cell production line performs differential processing on the sample to be tested and other battery substrates other than the sample to be tested. The differential processing can be achieved by adjusting the process parameters of the functional layer removal process. The specific process parameter adjustment can be based on the technical personnel skilled in the art. Figure 2 or Figure 3 The obtained structure and the thickness of each functional layer in the structure (such as the tunneling oxide layer 21, the doped polysilicon layer 22, the doped silicon glass layer 40, etc.) are obtained by multiple experimental tests to obtain the process parameters of the functional layer removal process. Figure 4 or Figure 5 The structure shown does not limit the process parameters of the functional layer removal process.

[0100] Step S103: Detecting the actual sheet resistance of the sample to be detected with the passivation contact structure removed.

[0101] This step can be tested using a four-probe method. In addition, in order to further improve the accuracy of the test results and the accuracy of the subsequent analysis of the performance of the passivation contact structure, this step can also detect the actual sheet resistance of the sample to be tested at different temperatures after the passivation contact structure is removed.

[0102] Step S104: Determine the actual block resistance range corresponding to the battery matrix based on the pre-constructed correlation between the resistivity and the block resistance range and the actual resistivity of the battery matrix, and analyze the performance of the passivation contact structure based on the actual block resistance range and the detected actual block resistance to indicate the status of the battery production line where the sample to be tested is located.

[0103] Specifically, the technical solution provided in this embodiment corresponds to a battery matrix 10 whose resistivity is generally 0.1Ω·cm to 100Ω·cm. For example, the resistivity of the battery matrix 10 can be 0.1Ω·cm, 0.5Ω·cm, 1Ω·cm, 5Ω·cm, 10Ω·cm, 20Ω·cm, 25Ω·cm, 30Ω·cm, 50Ω·cm, 60Ω·cm, 75Ω·cm, 80Ω·cm, 90Ω·cm or 100Ω·cm, etc.

[0104] The square resistance interval given in the embodiment of the present invention refers to a range of square resistance indicating excellent performance of the passivation contact structure. In addition, the square resistance interval may also be a range of square resistance indicating poor performance of the passivation contact structure.

[0105] The following is an example of a sheet resistance range that indicates a range of sheet resistance with excellent passivation contact structure performance. For example, the correlation between resistivity and sheet resistance range satisfies the following two equations:

[0106] Relationship (1) indicating the relationship between the resistivity and the minimum value in the sheet resistance interval:

[0107]

[0108] Among them, r i Represents resistivity; R i-min It corresponds to the resistivity r i The minimum value in the sheet resistance range;

[0109] Relationship (2) indicating the relationship between resistivity and the minimum value in the sheet resistance interval:

[0110]

[0111] Among them, r i Represents resistivity; R i-max It corresponds to the resistivity r i The maximum value in the square resistance range.

[0112] Accordingly, based on the above-mentioned equations (1) and (2), a specific implementation method for determining the actual block resistance range corresponding to the battery matrix 10 may include: substituting the actual resistivity of the battery matrix 10 into equations 1 and 2, calculating the minimum and maximum values ​​of the actual block resistance range, and thus obtaining the actual block resistance range corresponding to the actual resistivity of the battery matrix 10 (i.e., the actual block resistance range corresponding to the battery matrix 10).

[0113] It can be understood that the maximum and minimum values ​​of the sheet resistance range can be rounded based on the above-mentioned relationship (1) and relationship (2), and the rounding can be rounding up the calculation results of relationship (1) and relationship (2), or rounding down the calculation results of relationship (1) and relationship (2). For example, according to the above-mentioned relationship (1) and relationship (2), it is obtained that: when the resistivity of the silicon wafer used in the battery matrix 10 is 1Ω·cm, the sheet resistance range is [75Ohm / sq, 90Ohm / sq]; when the resistivity of the silicon wafer used in the battery matrix 10 is 5Ω·cm, the sheet resistance range is [300Ohm / sq, 350Ohm / sq]; when the resistivity of the silicon wafer used in the battery matrix 10 is 10Ω·cm, the sheet resistance range is [900Ohm / sq, 1100Ohm / sq]; wherein Ohm / sq represents the unit of sheet resistance. For example, for the sample to be tested, when the actual resistivity of the silicon wafer used is 1Ω·cm, if the actual block resistance of the sample to be tested detected in the above step S103 falls within [75Ohm / sq, 90Ohm / sq], it is determined that the performance of the passivation contact structure 20 of the sample to be tested is excellent; if the actual block resistance of the sample to be tested detected in the above step S103 does not fall within [75Ohm / sq, 90Ohm / sq], it indicates that the battery production line where the sample to be tested is located is in normal condition; then it is determined that the performance of the passivation contact structure 20 of the sample to be tested is abnormal, indicating that the battery production line where the sample to be tested is located may be abnormal.

[0114] That is, taking the block resistance interval as an example, which refers to the range of block resistance indicating excellent performance of the passivation contact structure, the performance of the passivation contact structure can be analyzed as follows: when the detected actual block resistance falls into the actual block resistance interval corresponding to the actual resistivity of the battery matrix 10, it is determined that the performance of the passivation contact structure is excellent and the battery production line where the sample to be tested is located is normal; when the detected actual block resistance does not fall into the actual block resistance interval corresponding to the actual resistivity of the battery matrix 10, it is determined that the performance of the passivation contact structure is abnormal, and a prompt message indicating that the production line where the sample to be tested is abnormal is issued.

[0115] That is to say, through the test results of the sample to be tested, the performance of the passivation contact structure formed on the production line and the situation of the production line can be obtained, so as to realize online detection and monitoring of the production line, and timely discover the performance of the passivation contact structure produced by the production line and whether the production line is abnormal, so that technical personnel can timely adjust the abnormal production line to effectively improve the output and yield of solar cells with excellent passivation contact structures.

[0116] Furthermore, based on the above analysis of the performance of the passivation contact structure 20 according to the sheet resistance range and the detected sheet resistance, the performance of the passivation contact structure 20 can also be analyzed in combination with the pre-established correlation between the resistivity and the sheet resistance variance threshold; wherein the correlation between the resistivity and the sheet resistance variance threshold satisfies the following relationship (3):

[0117] The relationship between resistivity and sheet resistance variance threshold is shown in equation (3):

[0118] w i =(0.03×r i +0.02)×100% (3)

[0119] Among them, r i Represents resistivity; w i It corresponds to the resistivity r i The sheet resistance variance threshold.

[0120] It can be understood that by substituting the actual resistivity of the battery matrix 10 into the relationship (3), the actual square resistance variance threshold corresponding to the actual resistivity of the battery matrix 10 (i.e., the actual square resistance variance threshold corresponding to the battery matrix 10) can be calculated.

[0121] With respect to the actual sheet resistance variance threshold corresponding to the battery matrix 10 obtained by using the above relationship (3), generally, when the detected actual sheet resistance is within the above actual sheet resistance interval and the sheet resistance variance (STD) corresponding to the battery matrix 10 is less than the actual sheet resistance variance threshold, it is determined that the performance of the passivation contact structure 20 is excellent. When the detected actual sheet resistance does not fall within the above actual sheet resistance interval, it is directly determined that the performance of the passivation contact structure 20 is abnormal or defective.

[0122] Exemplarily, based on the above relationship (3), it is obtained that when the actual resistivity of the battery matrix 10 is 1Ω·cm, the corresponding actual sheet resistance variance threshold is 5%, when the actual resistivity of the battery matrix 10 is 5Ω·cm, the corresponding actual sheet resistance variance threshold is 15%, when the actual resistivity of the battery matrix 10 is 10Ω·cm, the corresponding actual sheet resistance variance threshold is 30%, etc. For example, for the actual sheet resistance of the sample to be tested obtained based on the battery matrix 10 with an actual resistivity of 1Ω·cm, if the actual sheet resistance of the sample to be tested is within the actual sheet resistance range [75Ohm / sq, 90Ohm / sq], and the sheet resistance variance (STD) is less than 5%, it is determined that the passivation contact structure performance of the sample to be tested is excellent, thereby determining that the battery production line is in normal condition.

[0123] Furthermore, in step S104, based on the correlation between the resistivity and the sheet resistance range, the sheet resistance change rate of the sample to be tested with the passivation contact structure removed can be further calculated according to the actual sheet resistance of the battery matrix 10 at different temperatures; and the performance of the passivation contact structure can be analyzed in combination with the sheet resistance change rate.

[0124] The actual sheet resistance at different temperatures may be the actual sheet resistance at two fixed temperatures, or may be a variation curve of the actual sheet resistance in a continuously varying temperature range.

[0125] For the actual sheet resistance at two fixed temperatures, the sheet resistance change rate of the sample to be tested is obtained by the ratio of the difference between the actual sheet resistance at the two fixed temperatures and the smaller actual sheet resistance of the two fixed temperatures.

[0126] For the variation curve of the actual sheet resistance in a continuously changing temperature range, the maximum sheet resistance and the minimum sheet resistance in the variation curve of the actual sheet resistance are selected, and the sheet resistance change rate of the sample to be tested is obtained by the ratio of the difference between the maximum sheet resistance and the minimum sheet resistance to the minimum sheet resistance.

[0127] This step also provides a correlation between the resistivity and the square resistance change rate interval. Among them, the square resistance change rate interval indicates the range of the square resistance change rate with excellent performance of the passivation contact structure. In addition, the square resistance change rate interval can also be a range of the square resistance change rate indicating poor performance of the passivation contact structure. Exemplarily, for the actual resistivity of the battery matrix 10 is 1Ω·cm, its square resistance change rate is <20%; for the actual resistivity of the battery matrix 10 is 10Ω·cm, its square resistance change rate is <22%, etc.

[0128] After determining the sample to be tested with excellent performance through the correlation between resistivity and square resistance range, the square resistance change rate of the sample to be tested is further analyzed, and the square resistance change rate range indicating the range of square resistance change rate of the passivation contact structure with excellent performance is taken as an example. If the square resistance change rate of the sample to be tested is within the square resistance change rate interval corresponding to the actual resistivity of the battery matrix 10 of the sample to be tested, it is determined that the performance of the passivation contact structure is excellent and the production line is normal; if the square resistance change rate of the sample to be tested does not fall within the square resistance change rate interval corresponding to the actual resistivity of the battery matrix 10 of the sample to be tested, it is determined that the performance of the passivation contact structure is poor and the production line is abnormal. For example, for the sample to be tested with an actual resistivity of 1Ω·cm, first analyze whether the actual sheet resistance of the sample to be tested falls within the actual sheet resistance range [75Ohm / sq, 90Ohm / sq]. If it does not fall within [75Ohm / sq, 90Ohm / sq], it is determined that the sample to be tested is unqualified; if the actual sheet resistance of the sample to be tested falls within the actual sheet resistance range [75Ohm / sq, 90Ohm / sq], further analyze the sheet resistance change rate of the sample to be tested. If the sheet resistance change rate of the sample to be tested is <20%, the passivation contact structure performance of the sample to be tested is excellent.

[0129] For example, taking the cell matrix 10 with an actual resistivity of 1Ω·cm and the doping element as phosphorus as an example, the corresponding actual square resistance interval is [75Ohm / sq, 90Ohm / sq], and the corresponding square resistance change rate is <20%. If the actual square resistance of the sample to be tested detected in the above step S103 is lower than 75Ohm / sq, it can be indicated that the tunneling oxide layer and the phosphorus diffusion process of the solar cell produced on the production line where the sample to be tested are not matched, such as the tunneling oxide layer is too thin, the phosphorus diffusion advancement temperature is too high, etc. If it is higher than 90Ohm / sq, it may be caused by reasons such as the tunneling oxide layer is too thick, the phosphorus source is insufficient, and the phosphorus diffusion advancement temperature is low. If the actual square resistance of the sample to be tested falls within [75Ohm / sq, 90Ohm / sq], but the square resistance change rate is greater than 20%, it indicates that the expanded silicon substrate part of the solar cell produced on the production line where the sample to be tested is uneven, which is also related to the insufficient matching of the tunneling layer and the phosphorus diffusion process.

[0130] In addition, the performance of the passivation contact structure can also be analyzed by combining the above-mentioned correlation between resistivity and sheet resistance interval, the correlation between resistivity and sheet resistance variance threshold, and the sheet resistance change rate. First, analyze whether the actual sheet resistance of the sample to be tested falls into the actual sheet resistance interval corresponding to the actual resistivity of the silicon wafer used by the sample to be tested; if it falls into the actual sheet resistance interval, further analyze whether the sheet resistance variance of the sample to be tested is less than the actual sheet resistance variance threshold corresponding to the actual resistivity of the silicon wafer used by the sample to be tested; if the sheet resistance variance of the sample to be tested is less than the actual sheet resistance variance threshold, further analyze the sheet resistance resistivity of the sample to be tested. For example, for the sample to be tested with an actual resistivity of 1Ω·cm, first analyze whether the actual sheet resistance of the sample to be tested falls within the actual sheet resistance range [75Ohm / sq, 90Ohm / sq]. If it does not fall within [75Ohm / sq, 90Ohm / sq], the sample to be tested is determined to be unqualified; if the actual sheet resistance of the sample to be tested falls within the actual sheet resistance range [75Ohm / sq, 90Ohm / sq], further analyze the sheet resistance variance of the sample to be tested. If the sheet resistance variance of the sample to be tested is less than 5%, further analyze the sheet resistance change rate of the sample to be tested. If the sheet resistance change rate of the sample to be tested is less than 20%, the passivation contact structure performance of the sample to be tested is excellent.

[0131] In this step, it is determined that the performance of the passivation contact structure is abnormal, and a prompt message indicating that the production line where the sample to be tested is abnormal is issued to remind the technicians of the production line abnormality and handle the production line abnormality in a timely manner.

[0132] Preferably, the above-mentioned online detection method of a solar cell with a passivation contact structure is applied to a production line of a TOPCon solar cell to detect the passivation contact structure of the TOPCon solar cell online.

[0133] In summary, the technical solution provided by the embodiment of the present invention takes the battery substrate processed by the passivation contact structure process on the selected solar cell production line as the sample to be detected, detects the actual block resistance of the sample to be detected after removing the passivation contact structure of the sample to be detected, and determines the actual block resistance range corresponding to the battery substrate based on the pre-constructed correlation relationship between the resistivity and the block resistance range and the actual resistivity of the battery substrate, and then analyzes the performance of the passivation contact structure based on the actual block resistance range and the detected actual block resistance to indicate the status of the battery production line where the sample to be detected is located, that is, by analyzing the actual block resistance of the sample to be detected belonging to the solar cell production line, the status of the solar cell production line where the sample to be detected is located is obtained, and online analysis of the performance of the passivation contact structure produced by the solar cell production line and the status of the solar cell production line is achieved, so as to be able to provide timely feedback on the performance of the passivation contact structure and the production status of the solar cell production line to the technical personnel, so that the technical personnel can promptly discover problems with the passivation contact structure and promptly adjust the production process of the passivation contact structure.

[0134] In addition, this online detection method has important guiding value for the abnormal troubleshooting of mass production ramp-up of solar cells with passivated contact structures.

[0135] It is worth noting that the above Figure 1 The online detection method of the solar cell with a passivated contact structure shown in the figure can be coordinated with the controller of the equipment or production process on the solar cell production line through the operation program installed in the server or controller to achieve the above Figure 1 The various steps of the online detection method shown enable the above online detection method to be completed automatically without manual intervention.

[0136] Furthermore, an embodiment of the present invention also provides an online detection method for a solar cell with a passivated contact structure applied to a server or a controller. Figure 6 As shown, the online detection method of the solar cell with a passivation contact structure applied to a server or a controller may include the following steps:

[0137] Step S601: outputting a first control instruction for selecting a sample to be tested to a cell clamping device on a solar cell production line, so that the cell clamping device clamps the sample to be tested.

[0138] Step S602: outputting a second control instruction for instructing transportation to the cell gripping device, so that the cell gripping device transports the sample to be tested to the functional layer removal process in the solar cell production line.

[0139] When the server or controller receives a signal sent by the battery cell clamping device indicating that it has clamped the sample to be tested, the server or controller sends a second control instruction to the battery cell clamping device.

[0140] Step S603: outputting a third control instruction for instructing to remove the entire passivation contact structure to the functional layer removal process, so as to remove the passivation contact structure of the sample to be tested in the functional layer removal process.

[0141] After the server or controller receives the signal indicating that the sample to be detected has reached the functional layer removal process, the server or controller sends a third control instruction to the operating device of the functional layer removal process.

[0142] Step S604: driving the detection device to detect the actual sheet resistance of the sample to be detected with the passivation contact structure removed.

[0143] After receiving an indication signal indicating that the sample to be tested with the passivation contact structure removed has reached the detection position, the server or controller sends a driving signal to the detection device, so that the detection device detects the actual block resistance of the sample to be tested with the passivation contact structure removed.

[0144] Step S605: Determine the actual block resistance range corresponding to the battery matrix based on the pre-constructed correlation between the resistivity and the block resistance range and the actual resistivity of the battery matrix detected by the detection module; analyze the performance of the passivation contact structure based on the actual block resistance range and the detected actual block resistance to indicate the status of the battery production line where the sample to be detected is located.

[0145] Furthermore, an embodiment of the present invention also provides an online detection device for a solar cell with a passivated contact structure. The online detection device may include: a control module, a detection module and an analysis module, wherein:

[0146] A control module, used to output a first control instruction for instructing the selection of a sample to be tested to a cell clamping device on a solar cell production line, and after the cell clamping device clamps the sample to be tested, output a second control instruction for instructing the transport to the cell clamping device, so that the cell clamping device transports the sample to be tested to a functional layer removal process in the solar cell production line;

[0147] The control module is further used to output a third control instruction instructing to remove the entire passivation contact structure to the functional layer removal process, so as to remove the passivation contact structure of the sample to be tested in the functional layer removal process;

[0148] A detection module, used for driving a detection device to detect an actual sheet resistance of a sample to be detected with a passivation contact structure removed;

[0149] The analysis module is used to determine the actual block resistance range corresponding to the battery matrix based on the pre-constructed correlation between the resistivity and the block resistance range and the actual resistivity of the battery matrix detected by the detection equipment, and analyze the performance of the passivation contact structure based on the actual block resistance range and the detected actual block resistance to indicate the status of the battery production line where the sample to be detected is located.

[0150] Furthermore, an embodiment of the present invention provides an electronic device, which may include:

[0151] one or more processors;

[0152] a storage device for storing one or more programs,

[0153] When one or more programs are executed by one or more processors, the one or more processors implement the online detection method for a solar cell with a passivated contact structure as provided in any of the above embodiments.

[0154] Furthermore, an embodiment of the present invention provides a computer-readable medium having a computer program stored thereon, and when the program is executed by a processor, the online detection method for a solar cell with a passivated contact structure provided in any of the above embodiments is implemented.

[0155] In particular, according to the embodiments disclosed in the present invention, the process described above with reference to the flowchart can be implemented as a computer software program. For example, the embodiments disclosed in the present invention include a computer program product, which includes a computer program carried on a computer-readable medium, and the computer program includes a program code for executing the method shown in the flowchart. In such an embodiment, the computer program can be downloaded and installed from a network through a communication part, and / or installed from a removable medium. When the computer program is executed by a central processing unit (CPU), the above-mentioned functions defined in the system of the present invention are executed.

[0156] It should be noted that the computer-readable medium shown in the present invention may be a computer-readable signal medium or a computer-readable storage medium or any combination of the above two. The computer-readable storage medium may be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, device or device, or any combination of the above. More specific examples of computer-readable storage media may include, but are not limited to: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In the present invention, a computer-readable storage medium may be any tangible medium containing or storing a program that can be used by or in combination with an instruction execution system, device or device. In the present invention, a computer-readable signal medium may include a data signal propagated in a baseband or as part of a carrier wave, which carries a computer-readable program code. This propagated data signal may take a variety of forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination of the above. Computer-readable signal media may also be any computer-readable medium other than computer-readable storage media, which may send, propagate or transmit a program for use by or in conjunction with an instruction execution system, apparatus or device. The program code contained on the computer-readable medium may be transmitted using any appropriate medium, including but not limited to: wireless, wire, optical cable, RF, etc., or any suitable combination of the above.

[0157] The introduction provided in the above steps is only used to help understand the structure, method and core idea of ​​the present invention. For ordinary technicians in this technical field, without departing from the principle of the present invention, several improvements and modifications can be made to the present invention, and these improvements and modifications also belong to the scope of protection of the claims of the present invention.

Claims

1. An online detection method for a solar cell with a passivated contact structure, characterized in that: include: Step 1: From the battery substrates (10) processed by the passivation contact structure process, a battery substrate (10) having the passivation contact structure (20) is selected as a sample to be tested, wherein, in the process of forming the passivation contact structure, part of the doping element passes through the passivation contact structure (20) and enters the battery substrate; Step 2, removing the passivation contact structure (20) of the sample to be tested; Step 3, detecting the actual sheet resistance of the sample to be detected with the passivation contact structure (20) removed; Step 4: using the pre-constructed correlation between the resistivity and the sheet resistance range and the actual resistivity of the battery matrix (10), determine the actual sheet resistance range corresponding to the battery matrix (10); based on the actual sheet resistance range and the detected actual sheet resistance, analyze the performance of the passivation contact structure (20) to indicate the status of the battery production line where the sample to be tested is located.

2. The online detection method according to claim 1, characterized in that: Before step 1, the method further includes: randomly selecting a target battery substrate, and preparing a passivation contact structure on one or two main surfaces of the target battery substrate in a passivation contact structure process; Step 1 includes: determining a target battery substrate having a passivation contact structure prepared on one or both main surfaces as a sample to be tested; or, Before step 1, the method further includes: in a passivation contact structure process, preparing a passivation contact structure (20) on one or two main surfaces of a battery substrate (10); Step 1 comprises: randomly selecting a battery substrate (10) having one or two main surfaces with a passivation contact structure as a sample to be tested.

3. The online detection method according to claim 2, characterized in that: A passivation contact structure (20) is prepared on a main surface of the target battery substrate or the battery substrate (10), comprising: Sequentially forming a stacked tunneling oxide layer (21) and an intrinsic polysilicon layer on the target battery substrate or a main surface of the battery substrate; Diffusing doping elements into the intrinsic polysilicon layer, wherein part of the diffused doping elements passes through the tunneling oxide layer (21) and enters the target battery substrate or a main surface of the battery substrate (10); or, A passivation contact structure (20) is prepared on both main surfaces of the target battery substrate or the battery substrate (10), comprising: Sequentially forming a stacked tunneling oxide layer (21) and an intrinsic polysilicon layer on the target battery substrate or on two main surfaces of the battery substrate; Doping elements are diffused into the intrinsic polysilicon layer of the two main surfaces, wherein part of the diffused doping elements pass through the tunneling oxide layer (21) and enter the two main surfaces of the target battery substrate or the battery substrate (10).

4. The online detection method according to any one of claims 1 to 3, characterized in that: Step 2 includes: transporting the sample to be tested to a functional layer removal process in a solar cell production line; The passivation contact structure (20) of the sample to be tested is removed in the functional layer removal step.

5. The online detection method according to claim 1, characterized in that: Step 4 includes: When the detected actual sheet resistance falls within the actual sheet resistance range, it is determined that the performance of the passivation contact structure (20) is excellent and the battery production line where the sample to be detected is located is normal; When the detected actual sheet resistance does not fall within the actual sheet resistance range, determining that the performance of the passivation contact structure (20) is abnormal, and issuing a prompt message indicating that the production line where the sample to be detected is located is abnormal; and / or, The correlation between the resistivity and the sheet resistance range satisfies the following two equations: Relationship (1) indicating the relationship between the resistivity and the minimum value in the sheet resistance interval: Among them, r i Represents resistivity; R i-min It corresponds to the resistivity r i The minimum value in the sheet resistance range; Relationship (2) indicating the relationship between the resistivity and the maximum value in the sheet resistance interval: Among them, r i Represents resistivity; R i-max It corresponds to the resistivity r i The maximum value in the sheet resistance range; Preferably, The determining of the actual sheet resistance interval corresponding to the battery matrix (10) comprises: The actual resistivity of the battery matrix (10) is substituted into the relationship (1) and the relationship (2) to calculate the minimum and maximum values ​​of the actual block resistance range.

6. The online detection method according to claim 1 or 5, characterized in that: Step 3 includes: The actual sheet resistance of the sample to be tested with the passivation contact structure (20) removed is tested at different temperatures.

7. The online detection method according to claim 6, characterized in that: Step 4 also includes: Further combining the pre-established correlation between resistivity and sheet resistance variance threshold, the performance of the passivation contact structure (20) is analyzed; The correlation between the resistivity and the sheet resistance variance threshold satisfies the following equation (3): The relationship between the resistivity and the sheet resistance variance threshold is shown in equation (3): w i ＝(0.03×r i +0.02)×100％ (3) Among them, r i Represents resistivity; w i It corresponds to the resistivity r i The sheet resistance variance threshold; and / or, Step 4 also includes: calculating the sheet resistance change rate of the sample to be tested with the passivation contact structure (20) removed according to the actual sheet resistance at different temperatures; Furthermore, the performance of the passivation contact structure (20) is analyzed in combination with the square resistance change rate.

8. The online detection method according to any one of claims 1 to 3, 5 and 7, characterized in that: The battery substrate (10) is an N-type silicon substrate; The doping element contained in the passivation contact structure (20) is an N-type doping element.

9. An online detection method for a solar cell with a passivated contact structure, characterized in that: include: Outputting a first control instruction indicating selection of a sample to be tested to a cell clamping device on a solar cell production line, so that the cell clamping device clamps the sample to be tested; Outputting a second control instruction instructing transportation to the cell clamping device, so that the cell clamping device transports the sample to be tested to a functional layer removal process in the solar cell production line; Outputting a third control instruction instructing to remove the entire surface passivation contact structure to the functional layer removal process, so as to remove the passivation contact structure of the sample to be tested in the functional layer removal process; Driving the detection device to detect the actual sheet resistance of the sample to be detected with the passivation contact structure removed; According to the pre-constructed correlation between the resistivity and the block resistance range and the actual resistivity of the battery matrix detected by the detection module, the actual block resistance range corresponding to the battery matrix is ​​determined, and the performance of the passivation contact structure is analyzed based on the actual block resistance range and the detected actual block resistance to indicate the status of the battery production line where the sample to be detected is located.

10. An online detection device for a solar cell with a passivated contact structure, characterized in that: include: Control module, detection module and analysis module, wherein: The control module is used to output a first control instruction for instructing selection of a sample to be detected to a cell clamping device on a solar cell production line, and after the cell clamping device clamps the sample to be detected, output a second control instruction for instructing transportation to the cell clamping device, so that the cell clamping device transports the sample to be detected to a functional layer removal process in the solar cell production line; The control module is further used to output a third control instruction instructing to remove the entire passivation contact structure to the functional layer removal process, so as to remove the passivation contact structure of the sample to be tested in the functional layer removal process; The detection module is used to drive the detection device to detect the actual sheet resistance of the sample to be detected with the passivation contact structure removed; The analysis module is used to determine the actual block resistance range corresponding to the battery matrix based on the pre-constructed correlation between the resistivity and the block resistance range and the actual resistivity of the battery matrix detected by the detection equipment, and analyze the performance of the passivation contact structure based on the actual block resistance range and the detected actual block resistance to indicate the status of the battery production line where the sample to be detected is located.

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