Optoelectronic integrated detector

Abstract

The present disclosure provides an optoelectronic integrated detector, comprising a housing; a passive optical chip assembly arranged in the housing and comprising a wavelength division multiplexing chip adapted to decompose an externally input optical signal into optical signals of different wavelengths; an adjustable optical attenuation chip adapted to power modulate the optical signals of different wavelengths; a detector array assembly arranged in the housing and comprising an array carrier, a first electrode channel comprising a first portion parallel to a plane in which a second electrode channel lies and a second portion orthogonal to the plane in which the second electrode channel lies; a plurality of photodetectors adapted to respectively convert the modulated optical signals of different wavelengths into electrical signals, the photodetectors being mounted on the second portion of the first electrode channel, a first conductive portion of the first electrode channel changing direction at a junction of the first portion and the second portion; and a circuit board adapted to electrically connect the passive optical chip assembly and the detector array assembly.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of optoelectronic integration, and more particularly, to an optoelectronic integrated detector. BACKGROUND

[0002] With the development demand of large-scale array of detection systems, the traditional single-function device of discrete integration has large volume and high power consumption. The connection mode through fiber coupling will cause the performance and reliability to be compromised. Placing the traditional single-function device of discrete integration in different use environments will increase the connection damage between devices, increase the maintenance cost and difficulty, and the traditional single-function device of discrete integration cannot meet the requirements for constructing a large-scale array, rapidly expanding, and requiring high device reliability. At the same time, since the connection between each single-function device needs wire bonding when integrated, the number of wire bonds used in integration is large, thereby causing the problem of increasing signal transmission loss. SUMMARY

[0003] To solve at least one of the technical problems in the prior art, the present disclosure provides an optical integrated detector, which can reduce the number of wire bonds and simplify the packaging structure.

[0004] An optoelectronic integrated detector is provided by an embodiment of the present disclosure, which comprises: a shell; a passive optical chip assembly arranged in the shell and comprising a wavelength division multiplexing chip suitable for decomposing an optical signal input from outside into optical signals of different wavelengths; and an adjustable optical attenuation chip suitable for power modulation of the optical signals of different wavelengths to balance the power of the optical signals of different wavelengths; a detector array assembly arranged in the shell and comprising: an array carrier comprising a first electrode channel and a second electrode channel, the first electrode channel comprising a first part parallel to a plane in which the second electrode channel is located and a second part orthogonal to the plane in which the second electrode channel is located; and a plurality of photodetectors, the photodetectors being suitable for converting the modulated optical signals of different wavelengths into electrical signals respectively, the photodetectors being mounted on the second part of the first electrode channel, and a back electrode of the photodetectors being electrically connected to a first conductive part arranged on the second part, a front electrode of the photodetectors being electrically connected to a second conductive part arranged on the second electrode channel, the first conductive part changing direction at a joint of the first part and the second part, so that the first conductive part located on the first part is parallel to the second conductive part located on the second electrode channel; and a circuit board suitable for being electrically connected to the passive optical chip assembly and the detector array assembly.

[0005] According to some embodiments of the present disclosure, the array carrier is configured in a strip shape, the extending direction of the array carrier is perpendicular to the extending direction of the tunable optical attenuation chip, and the plurality of photodetectors are arranged on the array carrier in an array with intervals.

[0006] According to some embodiments of the present disclosure, the passive optical chip assembly further comprises a thermistor arranged on the upper side of the wavelength division multiplexing chip, the thermistor being adapted to detect the real-time working temperature of the wavelength division multiplexing chip, and a semiconductor refrigerator arranged on the lower side of the wavelength division multiplexing chip, the semiconductor refrigerator being adapted to control the temperature of the wavelength division multiplexing chip and the working environment of the wavelength division multiplexing chip according to the real-time working temperature, so as to avoid temperature drift of the wavelength of the optical signal output by the wavelength division multiplexing chip.

[0007] According to some embodiments of the present disclosure, the shell is provided with a recess, and the semiconductor refrigerator is arranged in the recess, so as to reduce the packaging thickness of the photoelectric integrated detector.

[0008] According to some embodiments of the present disclosure, the tunable optical attenuation chip comprises a plurality of control electrodes, and the optical signal of different wavelengths is power-modulated by the thermo-optic effect through applying voltage to the control electrodes.

[0009] According to some embodiments of the present disclosure, the photoelectric integrated detector further comprises a first heat sink arranged on the lower side of the tunable optical attenuation chip, the first heat sink being adapted to transmit the heat generated by the thermo-optic effect to the outside of the shell.

[0010] According to some embodiments of the present disclosure, the detector array assembly further comprises a second heat sink arranged on the lower side of the array carrier, the second heat sink being adapted to transmit the heat generated by the photodetectors to the outside of the shell.

[0011] According to some embodiments of the present disclosure, the array carrier is made of an insulating material, the first conductive part comprises a first conductor material plated on the surface of the first electrode channel, the second conductive part comprises a second conductor material plated on the surface of the second electrode channel and a wire connected between the second conductor material and the front electrode of the photodetector.

[0012] According to some embodiments of the present disclosure, the circuit board comprises a plurality of temperature control pins electrically connected with the thermistor and the semiconductor refrigerator, a plurality of control pins connected with each control electrode in the tunable optical attenuation chip, the optical signal of different wavelengths being power-modulated by the voltage applied from outside, and a plurality of detector pins connected with the first conductive part and the second conductive part respectively, the detector pins being adapted to receive the electrical signal.

[0013] According to some embodiments of the present disclosure, a plurality of fixing columns are further arranged on the shell, and the fixing columns are suitable for limiting the position of the circuit board in the shell.

[0014] According to the photoelectric integrated detector provided by the present disclosure, by embedding the passive optical chip assembly, the detector array assembly and the circuit board in the shell, the passive optical chip assembly includes a wavelength division multiplexing chip suitable for decomposing the optical signals input from the outside into optical signals of different wavelengths and an adjustable optical attenuation chip, the wavelength division multiplexing chip is used to increase the transmission capacity of the photoelectric integrated detector, and the adjustable optical attenuation chip is used to modulate the power of the optical signals of different wavelengths, so as to balance the power of the optical signals of different wavelengths, the detector array assembly includes an array carrier and a plurality of photoelectric detectors, the array carrier includes a first electrode channel and a second electrode channel, the first electrode channel includes a first part parallel to the plane where the second electrode channel is located and a second part orthogonal to the plane where the second electrode channel is located, the photoelectric detectors are used to convert the modulated optical signals of different wavelengths into electrical signals, the photoelectric detectors are installed on the second part of the first electrode channel, the back electrode of the photoelectric detector is electrically connected with a first conductive part arranged on the second part, the front electrode of the photoelectric detector is electrically connected with a second conductive part arranged on the second electrode channel, the first conductive part changes direction at the joint of the first part and the second part, so that the first conductive part located on the first part is parallel to the second conductive part located on the second electrode channel, and the circuit board is suitable for being electrically connected with the passive optical chip assembly and the detector array assembly. Compared with the traditional coaxial packaging and three-dimensional packaging, the packaging mode of the photoelectric integrated detector of the present disclosure can greatly reduce the number of wire bonds, and by simplifying the packaging structure, miniaturized integration, multifunction and high sensitivity are realized. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1 FIG. 1 is a perspective view of a photoelectric integrated detector according to an illustrative embodiment of the present disclosure;

[0016] Figure 2 FIG. 2 is a perspective view of a detector array assembly according to an illustrative embodiment of the present disclosure;

[0017] Figure 3 FIG. 3 is a perspective view of an array carrier according to an illustrative embodiment of the present disclosure;

[0018] Figure 4 FIG. 4 is a cross-sectional view of the combination of the array carrier and the photoelectric detector according to an illustrative embodiment of the present disclosure;

[0019] Figure 5 FIG. 5 is a partial perspective view of a photoelectric integrated detector according to an illustrative embodiment of the present disclosure;

[0020] Figure 6 is a perspective view of a housing according to an illustrative embodiment of the present disclosure;

[0021] Figure 7 is a top view of a circuit board according to an illustrative embodiment of the present disclosure;

[0022] Figure 8 is a top view of a circuit board mounted within a housing according to an illustrative embodiment of the present disclosure; and

[0023] Figure 9 is a perspective view of an optoelectronic integrated probe with a cover capped on the housing according to an illustrative embodiment of the present disclosure.

[0024] In the drawings, the following reference signs have the following meanings:

[0025] 1. housing;

[0026] 2. circuit board;

[0027] 21. temperature control pin;

[0028] 22. regulation pin;

[0029] 23. probe pin;

[0030] 24. pin hole;

[0031] 25. fixing hole;

[0032] 3. wavelength division multiplexing chip;

[0033] 4. tunable optical attenuator chip;

[0034] 5. array carrier;

[0035] 51. first electrode channel;

[0036] 511. first portion;

[0037] 512. second portion;

[0038] 52. second electrode channel;

[0039] 6. optoelectronic probe;

[0040] 7. optical fiber tail pipe;

[0041] 8. optical fiber array;

[0042] 9. thermistor;

[0043] 10. semiconductor refrigerator;

[0044] 11. groove;

[0045] 12. first heat sink;

[0046] 13. Second heat sink;

[0047] 14. Internal pins;

[0048] 15. External pins;

[0049] 16. Fixed column;

[0050] 17. Cap;

[0051] 18. External fixing holes;

[0052] A. Photosensitive surface;

[0053] B. Front electrode. Detailed Implementation

[0054] To make the objectives, technical solutions and advantages of this disclosure clearer, the following detailed description is provided in conjunction with specific embodiments and the accompanying drawings.

[0055] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit this disclosure. The terms “comprising,” “including,” etc., as used herein indicate the presence of the stated features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0056] All terms used herein, including technical and scientific terms, have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein are to be interpreted in a manner consistent with the context of this specification, and not in an idealized or overly rigid way.

[0057] When using expressions such as "at least one of A, B, and C," the meaning should generally be interpreted according to the understanding of someone skilled in the art. For example, "a system having at least one of A, B, and C" should include, but is not limited to, systems having A alone, having B alone, having C alone, having A and B, having A and C, having B and C, and / or having A, B, and C. Similarly, when using expressions such as "at least one of A, B, or C," the meaning should generally be interpreted according to the understanding of someone skilled in the art. For example, "a system having at least one of A, B, or C" should include, but is not limited to, systems having A alone, having B alone, having C alone, having A and B, having A and C, having B and C, and / or having A, B, and C.

[0058] Traditional packaging designs for optoelectronic integrated detectors, such as coaxial packaging and 3D packaging, require the installation of signal output thin-film circuits and bias thin-film circuit boards, which cannot guarantee the thickness and stability after packaging. According to one aspect of this disclosure, a passive optical chip assembly, a detector array assembly, and a circuit board are integrated into a housing. The passive optical chip assembly includes a wave demultiplexing chip suitable for decomposing externally input optical signals into optical signals of different wavelengths and an adjustable optical attenuation chip. The wave demultiplexing chip increases the transmission capacity of the optoelectronic integrated detector, and the adjustable optical attenuation chip modulates the power of optical signals of different wavelengths to achieve power balance among the various wavelengths. The detector array assembly includes an array carrier and multiple photodetectors. The array carrier includes... A first electrode channel and a second electrode channel are disclosed. The first electrode channel includes a first portion parallel to the plane of the second electrode channel and a second portion orthogonal to the plane of the second electrode channel. A photodetector converts modulated light signals with different wavelengths into electrical signals. The photodetector is mounted on the second portion of the first electrode channel, and its back electrode is electrically connected to a first conductive portion disposed in the second portion. The front electrode of the photodetector is electrically connected to a second conductive portion disposed in the second electrode channel. The first conductive portion changes direction at the junction of the first and second portions, making the first conductive portion on the first portion parallel to the second conductive portion on the second electrode channel. The circuit board is suitable for electrical connection with passive optical chip components and detector array components. Compared with traditional coaxial packaging and three-dimensional packaging, the packaging method of the photoelectric integrated detector disclosed herein can significantly reduce the number of wire bondings. By simplifying the packaging structure, miniaturized integration, multifunctionality, and high sensitivity are achieved.

[0059] To make the objectives, technical solutions and advantages of this disclosure clearer, the following detailed description is provided in conjunction with specific embodiments and the accompanying drawings.

[0060] Figure 1 This is a perspective view of an optoelectronic integrated detector according to an illustrative embodiment of the present disclosure.

[0061] An integrated photoelectric detector provided according to embodiments of this disclosure, such as Figure 1As shown, the photoelectric integrated detector includes a housing 1, a passive optical chip assembly, a detector array assembly, and a circuit board 2. The passive optical chip assembly is disposed within the housing 1 and includes a wavelength demultiplexing chip 3 suitable for decomposing externally input optical signals into optical signals of different wavelengths, and an adjustable optical attenuation chip 4. The adjustable optical attenuation chip 4 is suitable for power modulation of optical signals of different wavelengths to achieve power equalization of the optical signals of each wavelength. The detector array assembly is disposed within the housing 1 and includes an array carrier 5 and multiple photodetectors 6. The array carrier 5 includes a first electrode channel 51 and a second electrode channel 52. The first electrode channel 51 includes a first portion 511 parallel to the plane containing the second electrode channel 52 and a second portion 512 orthogonal to the plane containing the second electrode channel 52. Multiple photodetectors 6 are adapted to convert modulated optical signals with different wavelengths into electrical signals. The photodetectors 6 are mounted on the second portion 512 of the first electrode channel 51, and the back electrode of the photodetector 6 is electrically connected to a first conductive portion disposed in the second portion 512. The front electrode B of the photodetector 6 is electrically connected to a second conductive portion disposed in the second electrode channel 52. The first conductive portion changes direction at the junction of the first portion 511 and the second portion 512, such that the first conductive portion on the first portion 511 is parallel to the second conductive portion on the second electrode channel 52. The circuit board 2 is adapted to be electrically connected to a passive optical chip assembly and a detector array assembly.

[0062] According to an embodiment of this disclosure, an optical fiber tail tube 7 is provided on the housing 1 at the position where an externally input optical signal is received. Solder is used to seal the optical fiber tail tube 7 and the photoelectric integrated detector as a whole to ensure the waterproof effect and good airtightness of the photoelectric integrated detector.

[0063] According to embodiments of this disclosure, an externally input optical signal enters the optoelectronic integrated detector through an optical fiber array 8, which may be, for example, a single-channel optical fiber array. The optical fiber array 8 is coupled to the incident waveguide of the wavelength division multiplexing chip 3, and after curing with coupling adhesive under ultraviolet light, it is further cured with mechanical adhesive under ultraviolet light.

[0064] According to embodiments of this disclosure, the array channels of the wave demultiplexing chip 3 and the tunable light attenuation chip 4 are coupled one-to-one, cured with coupling adhesive under UV lamp, and then cured with mechanical adhesive under UV lamp.

[0065] According to embodiments of this disclosure, the wavelength demultiplexing chip 3 decomposes the optical signal from the fiber array 8 into optical signals of different wavelengths, allowing each wavelength to be transmitted through different channels, thereby increasing the signal transmission capacity of the optoelectronic integrated detector. The optical signals of different wavelengths enter the corresponding channels of the adjustable optical attenuation chip 4, which performs power modulation on the optical signals of different wavelengths to adjust the optical signal within a range from its maximum output power to -40dBm. This achieves the function of controlling the opening or closing of the channel and also serves as a power pre-equalization function before the optoelectronic integrated detector converts the optical signal into an electrical signal.

[0066] According to embodiments of this disclosure, the tunable light attenuation chip 4 includes multiple control electrodes, and by applying voltage to the control electrodes, power modulation of light signals of different wavelengths is performed using the thermo-optic effect.

[0067] According to embodiments of this disclosure, the thermo-optical effect is a phenomenon in which the optical properties of a liquid crystal change with temperature due to the alteration of its molecular arrangement caused by heating or cooling. The thermo-optical effect has the opposite effect on the refractive index of optical signals as the plasma dispersion effect; the higher the temperature, the greater the refractive index of the optical signal.

[0068] Figure 2 This is a perspective view of a detector array assembly according to an illustrative embodiment of the present disclosure.

[0069] According to embodiments of this disclosure, such as Figure 2 As shown, the multiple photodetectors 6 can be, for example, single-tube avalanche photodetector chips. Each single-tube avalanche photodetector chip converts modulated optical signals with different wavelengths into electrical signals. By applying an avalanche operating voltage, the single-tube avalanche photodetector chip can amplify the received and photoelectrically converted signal by a factor of 10. The single-tube avalanche photodetector chips are sequentially mounted on the second portion 512 of the first electrode channel 51 on the array carrier 5, enabling multiple optical signals to be simultaneously converted into electrical signals, thus increasing the signal capacity of the integrated photodetector.

[0070] According to embodiments of this disclosure, operational amplifier circuit electronic components, photodetector power supply and signal output control electronic components, adjustable light attenuation chip modulation control electronic components, and temperature control electronic components are placed on top of circuit board 2. Electronic components are soldered on circuit board 2 to form a single operational amplifier circuit, which amplifies the electrical signal after the photodetector 6 converts the optical signal into an electrical signal. The single operational amplifier circuit is designed to amplify the electrical signal by 10,000 times. Combined with the single-tube avalanche photodetector chip, which amplifies the signal by 10 times after applying the avalanche operating voltage, the overall design of the photodetector integrated system can amplify the received signal by 100,000 times, thereby enabling the response and detection of weak signals.

[0071] Figure 3 This is a perspective view of an array carrier 5 according to an illustrative embodiment of the present disclosure. Figure 4 This is a cross-sectional view of the array carrier 5 and photodetector 6 combined according to an illustrative embodiment of the present disclosure.

[0072] According to embodiments of this disclosure, such as Figure 2 and Figure 3 As shown, the first conductive part of the array carrier 5 changes direction at the junction of the first part 511 and the second part 512, and the direction of the electrical signal is changed by a 90° bend. This allows the signal generated by the photosensitive surface A of the vertically mounted single-tube avalanche photodetector chip to be converted to a horizontal direction. That is, both the back electrode and the front electrode B are rotated into a plane parallel to the detector pin 23 (described in detail below). Figure 4 As shown, this is to facilitate the subsequent transmission of electrical signals to the corresponding detector pin 23 on the circuit board 2 via wire bonding. The wire is, for example, a gold wire.

[0073] According to embodiments of this disclosure, a passive optical chip assembly, a detector array assembly, and a circuit board 2 are housed within a housing 1. The passive optical chip assembly includes a wave demultiplexing chip 3 and an adjustable optical attenuation chip 4, which are used to decompose externally input optical signals into optical signals of different wavelengths. The wave demultiplexing chip 3 increases the transmission capacity of the photoelectric integrated detector, and the adjustable optical attenuation chip 4 modulates the power of optical signals of different wavelengths to achieve power equalization of the optical signals of different wavelengths. The detector array assembly includes an array carrier 5 and multiple photodetectors 6. The array carrier 5 includes a first electrode channel 51 and a second electrode channel 52. The first electrode channel 51 includes a first portion 511 parallel to the plane of the second electrode channel 52 and a second portion 512 orthogonal to the plane of the second electrode channel 52. The photodetectors 6 are used to modulate the optical signals of different wavelengths. The wavelength of the optical signal is converted into an electrical signal. The photodetector 6 is installed in the second part 512 of the first electrode channel 51, and the back electrode of the photodetector 6 is electrically connected to the first conductive part disposed in the second part 512. The front electrode B of the photodetector 6 is electrically connected to the second conductive part disposed in the second electrode channel 52. The first conductive part changes direction at the junction of the first part 511 and the second part 512, so that the first conductive part on the first part 511 is parallel to the second conductive part on the second electrode channel 52. The circuit board 2 is suitable for electrical connection with passive optical chip components and detector array components. Compared with traditional coaxial packaging and three-dimensional packaging, the packaging method of the photoelectric integrated detector disclosed herein can significantly reduce the number of wire bonding. By simplifying the packaging structure, the signal transmission loss is reduced, and miniaturized integration, multi-functionality and high sensitivity are achieved.

[0074] Figure 5This is a partial perspective view of an optoelectronic integrated detector according to an illustrative embodiment of the present disclosure.

[0075] According to embodiments of this disclosure, such as Figure 5 As shown, the array carrier 5 is constructed in a strip shape, and the extension direction of the array carrier 5 is orthogonal to the extension direction of the tunable light attenuation chip 4. Multiple photodetectors 6 are arranged in an array on the array carrier 5 at intervals.

[0076] According to embodiments of this disclosure, the height of the center of the photosensitive surface A of the plurality of photodetectors 6 is greater than the height of the tunable light attenuation chip 4, so that the end face of the output waveguide of the tunable light attenuation chip 4 is sequentially aligned with the center of the photosensitive surface A of the photodetector 6, thereby ensuring maximum coupling between the output port of the tunable light attenuation chip 4 and the photosensitive surface A of the photodetector 6.

[0077] According to embodiments of this disclosure, such as Figure 1 As shown, the passive optical chip assembly also includes a thermistor 9 and a thermoelectric cooler 10. The thermistor 9 is disposed on the upper side of the wavelength demultiplexing chip 3 and is used to detect the real-time operating temperature of the wavelength demultiplexing chip 3. The thermoelectric cooler 10 is disposed on the lower side of the wavelength demultiplexing chip 3 and is used to control the temperature of the wavelength demultiplexing chip 3 and its operating environment based on the real-time operating temperature, so as to avoid temperature drift of the wavelength of the optical signal output by the wavelength demultiplexing chip 3.

[0078] According to an embodiment of this disclosure, a thermistor 9 is fixed to the upper side of the wave demultiplexing chip 3 using silver paste.

[0079] According to embodiments of this disclosure, the thermistor 9 detects the real-time operating temperature of the wave demultiplexing chip 3 by providing feedback on its own current magnitude. The semiconductor cooler 10 is adapted to control the temperature of the wave demultiplexing chip 3 and its operating environment based on the real-time operating temperature, maintaining the temperature of the wave demultiplexing chip 3 and its operating environment at 25°C. This prevents the heat generated by the various devices during the operation of the optoelectronic integrated detector from causing temperature drift in the center wavelength of the output channel of the wave demultiplexing chip 3, thus ensuring the stability of the optoelectronic integrated detector's performance.

[0080] Figure 6 This is a perspective view of a housing 1 according to an illustrative embodiment of the present disclosure.

[0081] According to embodiments of this disclosure, such as Figure 6 As shown, a groove 11 is provided on the housing 1, and the semiconductor cooler 10 is disposed in the groove 11 to reduce the packaging thickness of the photoelectric integrated detector.

[0082] According to embodiments of this disclosure, the recess 11 reduces the packaging thickness of the photoelectric integrated detector and also reduces the overall size of the photoelectric integrated detector.

[0083] According to embodiments of this disclosure, such as Figure 1 As shown, the photoelectric integrated detector also includes a first heat sink 12, which is disposed on the underside of the tunable light attenuation chip 4. The first heat sink 12 is suitable for transferring the heat generated by the thermo-optical effect to the outside of the housing 1.

[0084] According to embodiments of this disclosure, a first heat sink 12 is fixed using gold-tin solder to ensure the stability and reliability of each component of the optoelectronic integrated detector during transportation and use.

[0085] According to an embodiment of this disclosure, mechanical adhesive is used to fill the space between the tunable light attenuation chip 4 and the first heat sink 12. After curing by irradiation with ultraviolet light, the chip is placed in an oven for further curing, thereby achieving complete fixation of the tunable light attenuation chip 4 at the optimal coupling position.

[0086] According to the embodiments of this disclosure, a first heat sink 12 is provided on the lower side of the tunable light attenuation chip 4, so that the heat generated by the thermo-optic effect is transferred to the outside of the housing 1 through the first heat sink 12 and exchanged with the external environmental medium. This overcomes the problem that the output wavelength of the wave demultiplexing chip 3 is affected by heat and thus causes temperature drift, thereby affecting the performance. It also avoids the problem that the inter-channel crosstalk of the tunable light attenuation chip 4 increases due to temperature rise, thereby affecting the transmission quality of the optical signal, and ensures the stability of the working performance of the optoelectronic integrated detector.

[0087] According to embodiments of this disclosure, such as Figure 2 and Figure 5 As shown, the detector array assembly also includes a second heat sink 13 disposed on the lower side of the array carrier 5. The second heat sink 13 is suitable for transferring the heat generated by the photodetector 6 to the outside of the housing 1.

[0088] According to the embodiments of this disclosure, the height of the second heat sink 13 should be such that the center height of the photosensitive surface A of the photodetector 6 is greater than the sum of the heights of the adjustable light attenuation chip 4 and the first heat sink 12. The top surface height of the semiconductor cooler 10 fixed in the groove 11 should not be greater than the top surface height of the first heat sink 12 after fixing. By using the photodetector 6 and the second heat sink 13, the design scheme of increasing the reserved assembly space along the reverse light path direction can avoid the problem that the output port of the adjustable light attenuation chip 4 cannot be coupled to the photosensitive surface A of the photodetector 6 to the maximum extent when the height of the second heat sink 13 is higher than the height of the optical waveguide during packaging and fixing.

[0089] According to embodiments of this disclosure, a second heat sink 13 is fixed using gold-tin solder to ensure the stability and reliability of each component of the optoelectronic integrated detector during transportation and use.

[0090] According to embodiments of this disclosure, the first heat sink 12 and the second heat sink 13 are made of aluminum nitride ceramic with gold plating on the surface. The aluminum nitride ceramic heat sink has high processing precision, which can effectively ensure the smooth flow of the packaging optical path.

[0091] According to an embodiment of this disclosure, the array carrier 5 is made of an insulating material, the first conductive portion includes a first conductor material plated on the surface of the first electrode channel 51, and the second conductive portion includes a second conductor material plated on the surface of the second electrode channel 52 and a wire connecting the second conductor material and the front electrode B of the photodetector 6.

[0092] According to embodiments of this disclosure, the array carrier 5 is made of an insulating material, such as aluminum nitride ceramic, and the first and second conductor materials can be, for example, gold. The wire connecting the second conductor material and the front electrode B of the photodetector 6 can be, for example, a gold wire.

[0093] Figure 7 This is a top view of a circuit board 2 according to an illustrative embodiment of the present disclosure.

[0094] According to embodiments of this disclosure, such as Figure 7 As shown, circuit board 2 includes multiple temperature control pins 21, multiple modulation pins 22, and multiple detector pins 23. The multiple temperature control pins 21 are electrically connected to the thermistor 9 and the thermoelectric cooler 10. The multiple modulation pins 22 are connected to various modulation electrodes within the adjustable light attenuation chip 4, and power modulation of optical signals of different wavelengths is achieved by an externally applied voltage. The multiple detector pins 23 are respectively connected to a first conductive part and a second conductive part, and the detector pins 23 are used to receive electrical signals.

[0095] According to embodiments of this disclosure, a plurality of detector pins 23 are respectively bonded to a first conductive portion and a second conductive portion via wires, such as gold wires.

[0096] According to embodiments of this disclosure, the temperature control pin 21, the control pin 22, and the detector pin 23 are made of nickel-plated gold to ensure that the bonding pads of the wire bonding are tightly bonded to the temperature control pin 21, the control pin 22, and the detector pin 23 of the circuit board 2. When the wires are gold wires, the nickel-plated gold layer allows the gold wire solder balls to be firmly connected to the pins during the gold wire bonding process, further improving the overall reliability of the optoelectronic integrated detector.

[0097] Figure 8 This is a top view of a circuit board 2 installed in a housing 1 according to an illustrative embodiment of the present disclosure.

[0098] According to embodiments of this disclosure, such as Figure 1 , Figure 7 and Figure 8 As shown, multiple inner pins 14 of the housing 1 are connected to their corresponding outer pins 15, while each inner pin 14 is insulated from its adjacent outer pin 15. Multiple pin holes 24 are provided at the edge of the circuit board 2, and these pin holes 24 are sequentially and fixedly connected to the multiple inner pins 14 of the housing 1. The pin spacing is set to the minimum pin spacing to ensure a 300MHz bandwidth output, thus ensuring a compact package size for the optoelectronic integrated detector. The gap between the pin holes 24 and the inner pins 14 uses a highly conductive material, such as gold, copper, or tin, so that the external voltage applied to the outer pin 15 corresponding to the inner pin 14 controls the function of the optoelectronic integrated detector, and the amplified electrical signal is received through the output module of the outer pin 15 corresponding to the inner pin 14.

[0099] According to an embodiment of this disclosure, a plurality of fixing posts 16 are also provided on the housing 1, which are used to limit the position of the circuit board 2 within the housing 1.

[0100] According to embodiments of this disclosure, such as Figure 6 and Figure 7 As shown, the circuit board 2 is provided with fixing holes 25. The circuit board 2 is sequentially and fixedly connected to the fixing posts 16 on the housing 1 through the fixing holes 25. The gap between the fixing holes 25 and the fixing posts 16 is filled with gold solder to completely fix the circuit board 2 inside the housing 1. The fixing posts 16 adopt a ring welding method to solve the problem of the device falling off during transportation and use of the optoelectronic integrated detector, thereby enhancing the stability and reliability of the optoelectronic integrated detector.

[0101] Figure 9 This is a perspective view of a photoelectric integrated detector with a cover 17 placed on a housing 1, according to an illustrative embodiment of the present disclosure.

[0102] According to embodiments of this disclosure, such as Figure 9 As shown, the cover 17 of the housing 1 is consistent with the outer contour of the housing 1. After all components are encapsulated and fixed, the height of the highest surface of each component should be lower than the height of the highest top surface of the housing 1. After aligning the cover 17 with the outer contour of the housing 1, laser welding is performed. All parts of the housing 1 and the cover 17 are made of Kovar alloy, and the surface is gold-plated. Kovar alloy can meet the requirements of 300MHz signal output and stable performance at operating temperature. Compared with the ceramic material housing 1, the Kovar alloy housing 1 has lower cost and shorter manufacturing cycle, and can achieve mass production.

[0103] According to an embodiment of this disclosure, external fixing holes 18 are also provided at the four corners of the outer shell 1, so that when using the photoelectric integrated detector, the photoelectric integrated detector can be fixed in the usage environment through the external fixing holes 18.

[0104] It should also be noted that the directional terms mentioned in the embodiments, such as "up," "down," "front," "back," "left," and "right," are only for reference to the directions in the accompanying drawings and are not intended to limit the scope of protection of this disclosure. Throughout the drawings, the same elements are represented by the same or similar reference numerals. Conventional structures or constructions will be omitted where they may cause confusion in understanding this disclosure, and the shapes and dimensions of the components in the drawings do not reflect actual size and proportion, but are only schematic representations of the embodiments of this disclosure.

[0105] Unless otherwise stated, the numerical parameters in this specification and the appended claims are approximate values ​​and can be varied according to desired characteristics derived from the content of this disclosure. Specifically, all figures used in the specification and claims to indicate composition, reaction conditions, etc., should be understood to be modified by the term "about" in all cases. Generally, this means that a specific amount varies by ±10% in some embodiments, ±5% in some embodiments, ±1% in some embodiments, and ±0.5% in some embodiments.

[0106] The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify the corresponding elements does not imply that the element has any ordinal number, nor does it represent the order of one element with another element, or the order of manufacturing methods. The use of these ordinal numbers is only to enable a named element to be clearly distinguished from another element with the same name.

[0107] Furthermore, unless specifically described or required to occur in a specific order, the order of the above steps is not limited to those listed above and can be varied or rearranged according to the desired design. Moreover, the above embodiments can be used in combination with each other or with other embodiments based on design and reliability considerations; that is, technical features from different embodiments can be freely combined to form more embodiments.

[0108] The embodiments of this disclosure have been described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of this disclosure. Although various embodiments have been described above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination. The scope of this disclosure is defined by the appended claims and their equivalents. Various substitutions and modifications can be made by those skilled in the art without departing from the scope of this disclosure, and all such substitutions and modifications should fall within the scope of this disclosure.

Claims

1. An integrated photoelectric detector, comprising: case; A passive optical chip assembly is disposed within the housing and includes a wave demultiplexing chip suitable for decomposing an externally input optical signal into optical signals of different wavelengths. as well as The adjustable optical attenuation chip is suitable for power modulation of optical signals of different wavelengths to make the power of optical signals of different wavelengths equal. A detector array assembly, disposed within the housing, includes: The array carrier includes a first electrode channel and a second electrode channel, wherein the first electrode channel includes a first portion parallel to the plane containing the second electrode channel and a second portion orthogonal to the plane containing the second electrode channel; and Multiple photodetectors, each adapted to convert modulated light signals of different wavelengths into electrical signals, are mounted on a second portion of a first electrode channel. The back electrode of each photodetector is electrically connected to a first conductive portion disposed in the second portion, and the front electrode of each photodetector is electrically connected to a second conductive portion disposed in the second electrode channel. The first conductive portion changes direction at the junction of the first and second portions, such that the first conductive portion on the first portion is parallel to the second conductive portion on the second electrode channel. A circuit board suitable for electrical connection with the passive optical chip assembly and the detector array assembly.

2. The photoelectric integrated detector according to claim 1, wherein, The array carrier is constructed in a strip shape, and the extension direction of the array carrier is orthogonal to the extension direction of the tunable light attenuation chip. The plurality of photodetectors are arranged in an array on the array carrier at intervals.

3. The photoelectric integrated detector according to claim 1, wherein, The passive optical chip assembly also includes: A thermistor is disposed on the upper side of the wave demultiplexing chip, and the thermistor is suitable for detecting the real-time operating temperature of the wave demultiplexing chip; and A semiconductor cooler is disposed below the wave demultiplexing chip. The semiconductor cooler is adapted to control the temperature of the wave demultiplexing chip and the operating environment of the wave demultiplexing chip according to the real-time operating temperature, so as to avoid temperature drift of the wavelength of the optical signal output by the wave demultiplexing chip.

4. The photoelectric integrated detector according to claim 3, wherein, The housing has a groove, and the semiconductor cooler is disposed in the groove to reduce the packaging thickness of the optoelectronic integrated detector.

5. The photoelectric integrated detector according to claim 3 or 4, wherein, The tunable light attenuation chip includes multiple control electrodes. By applying voltage to the control electrodes, the power of the light signals of different wavelengths is modulated using the thermo-optic effect.

6. The photoelectric integrated detector according to claim 5, further comprising: A first heat sink is disposed on the underside of the tunable light attenuation chip. The first heat sink is adapted to transfer the heat generated by the thermo-optical effect to the outside of the housing.

7. The photoelectric integrated detector according to any one of claims 1-4, wherein, The detector array assembly also includes: A second heat sink is disposed on the underside of the array carrier, and the second heat sink is adapted to transfer the heat generated by the photodetector to the outside of the housing.

8. The photoelectric integrated detector according to any one of claims 1-4, wherein, The array carrier is made of an insulating material. The first conductive part includes a first conductor material plated on the surface of the first electrode channel. The second conductive part includes a second conductor material plated on the surface of the second electrode channel and a wire connecting the second conductor material and the front electrode of the photodetector.

9. The photoelectric integrated detector according to claim 5, wherein, The circuit board includes: Multiple temperature control pins are electrically connected to the thermistor and the semiconductor cooler; Multiple control pins are connected to various control electrodes within the tunable light attenuation chip, and the power of the optical signals of different wavelengths is modulated by an externally applied voltage; Multiple detector pins are connected to the first conductive part and the second conductive part respectively, and the detector pins are adapted to receive the electrical signal.

10. The photoelectric integrated detector according to claim 4, wherein, The housing is also provided with a plurality of fixing posts, which are used to limit the position of the circuit board within the housing.

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