Hollow atomic force probe processing method and system and hollow atomic force probe

Abstract

The invention provides a hollow atomic force probe processing method and system and a hollow atomic force probe, irradiation processing is performed on a flow channel in a first processing area and a flow channel in a second processing area of a to-be-processed probe through laser, so that a communicated flow channel is formed in the probe. According to the hollow atomic force probe machining method, the advantages of high efficiency, high energy, high precision and cold machining of laser are utilized, machining of the flow channel can be rapidly and accurately completed in the using process, and the high-precision and high-aspect-ratio flow channel is generated in the probe; the technical problem that in the prior art, a hollow atomic force probe machining method cannot meet the requirements for the precision and the aspect ratio of a hollow atomic force probe is solved.

Description

Technical Field

[0001] The invention belongs to the technical field of localized electrochemical deposition, and in particular relates to a method and system for processing a hollow atomic force probe and a hollow atomic force probe. Background Art

[0002] Localized electrochemical deposition can achieve precise deposition of metals or alloys in a specific area. As a high-precision, widely applicable, and high-deposition-rate electrochemical deposition technology, it has broad application prospects in the field of micro-nano manufacturing. Localized electrochemical deposition technology is based on the principle of electrochemical cathode deposition, which converts metal ions in the solution into metal atoms through an electrochemical reduction reaction. The hollow atomic force probe is a key tool for localized electrochemical deposition. Its internal flow channel is used to transport metal ion solution to the probe tip, and the deposition of metal atoms is achieved at the probe tip through electrochemical action. Therefore, the machining accuracy of the hollow atomic force probe flow channel has an important influence on the accuracy of localized electrochemical deposition.

[0003] The aperture and aspect ratio of the hollow atomic force probe flow channel are key factors that directly affect the accuracy of localized electrochemical deposition. The aperture of the flow channel of the existing hollow atomic force probe is generally only on the order of ten microns, which is difficult to meet the usage requirements today when localized electrochemical deposition is developing rapidly.

[0004] The existing hollow atomic force probe processing methods cannot meet the requirements for the precision and aspect ratio of the hollow atomic force probe. In order to adapt to the rapid development of micro-nano integrated devices, it is urgent to provide a hollow atomic force probe processing method that can realize flow channel processing with an aperture of less than 100nm and has a higher aspect ratio. Summary of the invention

[0005] In order to solve the technical problem that the hollow atomic force probe processing methods in the background technology cannot meet the requirements for the accuracy and aspect ratio of the hollow atomic force probe, the present invention provides a hollow atomic force probe processing method, system and atomic force probe.

[0006] In order to achieve the above object, the present invention adopts the following technical solution:

[0007] In a first aspect, the present invention provides a method for processing a hollow atomic force probe, the method comprising:

[0008] S1: Adjust laser parameters according to processing requirements;

[0009] S2: The probe to be processed is fixedly installed, and the probe to be processed is leveled and focused so that the first processing area on the probe to be processed is at the focus of the laser;

[0010] S3: outputting laser to irradiate the first processing area;

[0011] S4: After completing the processing of the flow channel in the first processing area, turn off the laser; flip the probe to be processed, and adjust the laser parameters so that the second processing area on the probe to be processed is at the focus of the laser;

[0012] S5: outputting laser to irradiate the second processing area;

[0013] S6: After completing the processing of the flow channel in the second processing area, turn off the laser to complete the processing of the hollow atomic force probe.

[0014] Optionally, the step S1 specifically includes: adjusting laser parameters according to the flow channel parameters to be processed, wherein the laser parameters include geometric parameters of the laser focal field, laser pulse width and pulse energy.

[0015] Optionally, step S3 includes:

[0016] S3.1: Use a time shaping module on the laser optical path to adjust the time envelope of the laser;

[0017] S3.2: Using a spatial light modulation module on the optical path after the time shaping module, the laser is modulated from a Gaussian distribution to a beam with a narrow intensity distribution;

[0018] S3.3: Focusing the light beam using a lens group;

[0019] S3.4: irradiate the first processing area with the focused light beam.

[0020] Optionally, the focal length of the focused light beam is greater than the length of the flow channel to be processed.

[0021] Optionally, the laser is a single-pulse ultrafast laser.

[0022] Optionally, the method for processing a hollow atomic force probe further includes step S7: using hydrofluoric acid to expand the processed hollow atomic force probe.

[0023] Optionally, the concentration of hydrofluoric acid is 2% to 10%.

[0024] In the second aspect, the present invention also provides a hollow atomic force probe processing system, which is used for any of the hollow atomic force probe processing methods described above, and the hollow atomic force probe processing system includes: a laser, a processing table and a flipping device; the processing table is arranged on the flipping device, and is used to fix the probe to be processed; the laser is movably arranged above the processing table.

[0025] Optionally, the hollow atomic force probe processing system further includes a time shaping module, a spatial light modulation module and a lens group; the time shaping module, the spatial light modulation module and the lens group are sequentially arranged in the optical path of the laser;

[0026] Wherein, the time shaping module is used to adjust the time envelope of the laser;

[0027] The spatial light modulation module is used to modulate the laser from Gaussian distribution to a light beam with narrow intensity distribution;

[0028] The lens group is used to focus the light beam.

[0029] In a third aspect, the present invention further provides a hollow atomic force probe, wherein the hollow atomic force probe is prepared based on any one of the above-mentioned hollow atomic force probe processing methods.

[0030] The beneficial effects of the present invention are:

[0031] (1) The present invention provides a method for processing a hollow atomic force probe, wherein the flow channels in the first processing area and the second processing area of ​​the probe to be processed are irradiated by laser respectively, thereby forming a connected flow channel in the probe. The hollow atomic force probe processing method of the present invention utilizes the advantages of high efficiency, high energy, high precision and cold processing of laser, and can quickly and accurately complete the processing of the flow channel during use, generating a high-precision and high-aspect ratio flow channel in the probe, thereby avoiding the technical problem that the hollow atomic force probe processing method in the prior art cannot meet the requirements for the precision and aspect ratio of the hollow atomic force probe.

[0032] (2) At the same time, the hollow atomic force probe processing method of the present invention utilizes the method of spatial beam shaping, applies a time shaping module, a spatial light modulation module and a lens group to the optical path of the laser, and shapes and focuses the laser, so that the laser beam irradiated on the probe to be processed meets the flow channel parameters that need to be processed.

[0033] (3) The hollow atomic force probe processing method provided in the present invention can also use hydrofluoric acid to assist in chemical etching of the hollow atomic force probe after the hollow atomic force probe is processed by laser, so as to further achieve the aperture control of the hollow atomic force probe to meet different hollow atomic force probe flow channel requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 is a schematic diagram of a method for processing a hollow atomic force probe in the present invention;

[0035] Figure 2 It is a schematic diagram of applying the time shaping module, the spatial light modulation module and the lens group to the laser light path in the present invention;

[0036] Figure 3 is a schematic diagram of irradiating the first processing area of ​​the hollow atomic force probe in the present invention;

[0037] Figure 4 is a schematic diagram of irradiating the second processing area of ​​the hollow atomic force probe in the present invention;

[0038] Figure 5 It is another schematic diagram of irradiating the second processing area of ​​the hollow atomic force probe in the present invention. DETAILED DESCRIPTION

[0039] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is by no means intended to limit the present invention and its application or use. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0040] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit exemplary embodiments according to the present invention. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprising" and / or "including" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0041] Unless otherwise specifically stated, the relative arrangement, numerical expressions and numerical values ​​of the parts and steps set forth in these embodiments do not limit the scope of the present invention. At the same time, it should be clear that, for ease of description, the sizes of the various parts shown in the accompanying drawings are not drawn according to the actual proportional relationship. The technology, method and equipment known to those of ordinary skill in the relevant art may not be discussed in detail, but in appropriate cases, the technology, method and equipment should be considered as a part of the specification. In all examples shown and discussed here, any specific value should be interpreted as being merely exemplary, rather than as a limitation. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters represent similar items in the following drawings, so that once a certain item is defined in an accompanying drawing, it does not need to be further discussed in subsequent drawings.

[0042] In the description of the present invention, it is necessary to understand that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "lateral, vertical, perpendicular, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the drawings. They are only for the convenience of describing the present invention and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the device or element referred to must have a specific direction or be constructed and operated in a specific direction. Therefore, they cannot be understood as limiting the scope of protection of the present invention: the directional words "inside and outside" refer to the inside and outside relative to the contours of each component itself.

[0043] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used here to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0044] In addition, it should be noted that the use of terms such as "first" and "second" to limit components is only for the convenience of distinguishing the corresponding components. If not otherwise stated, the above terms have no special meaning and therefore cannot be understood as limiting the scope of protection of the present invention.

[0045] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0046] In order to explore how to achieve a processing method for a hollow atomic force probe with a flow channel aperture of less than 100nm and a high aperture ratio, the applicant has conducted a long-term study. The methods used in the research process mainly include deep reactive ion etching and electron beam etching; among them, the minimum flow channel aperture processed by deep reactive ion etching is submicron level, which cannot meet the precision requirements of the existing hollow atomic force probe; if electron beam etching is used, although the etching of the flow channel aperture within 100nm can be achieved, the etching depth of electron beam etching is relatively shallow, which limits the aspect ratio of the hollow atomic force probe flow channel, reduces the rigidity and stability of the hollow atomic force probe, and has a negative impact on the operation of localized electrochemical deposition.

[0047] In order to solve the problems in the prior art, the applicant has conducted multiple tests and verifications and obtained the following solutions in the present invention:

[0048] Example 1

[0049] See also Figure 1 , showing a schematic diagram of a method for processing a hollow atomic force probe described in the present application, the method for processing a hollow atomic force probe comprising:

[0050] S1: Adjust laser parameters according to processing requirements;

[0051] S2: Continue to fix and install the probe to be processed, and level and focus the probe to be processed so that the first processing area on the probe to be processed is at the focus of the laser;

[0052] S3: outputting laser to irradiate the first processing area;

[0053] S4: After completing the processing of the flow channel in the first processing area, turn off the laser; flip the probe to be processed, and adjust the laser parameters so that the second processing area on the probe to be processed is at the focus of the laser;

[0054] S5: outputting laser to irradiate the second processing area;

[0055] S6: After completing the processing of the flow channel in the second processing area, turn off the laser to complete the processing of the hollow atomic force probe.

[0056] In this embodiment, a method for processing a hollow atomic force probe is provided, in which a laser is used to irradiate the flow channels in the first processing area and the second processing area of ​​the probe to be processed, respectively, so as to form a connected flow channel in the probe. The method for processing a hollow atomic force probe of the present invention utilizes the advantages of high efficiency, high energy, high precision and cold processing of lasers, and can quickly and accurately complete the processing of the flow channel during use, generating a high-precision and high-aspect-ratio flow channel in the probe, thereby avoiding the technical problem that the method for processing a hollow atomic force probe in the prior art cannot adapt to the requirements for the precision and aspect ratio of the hollow atomic force probe.

[0057] Furthermore, the laser in the present invention can be generated and adjusted by a laser.

[0058] At the same time, the hollow atomic force probe processing method of the present invention can also adjust the laser according to the actual processing channel parameters and the material of the probe to be processed, so as to adapt to the processing needs of hollow atomic force probes of different types and sizes, and has high flexibility and adaptability.

[0059] Further, see Figure 3 , Figure 4 and Figure 5The first processing area in the present invention can be the cross arm of the hollow atomic force probe, and the corresponding flow channel is the cross arm flow channel; the second processing area can be the needle tip of the hollow atomic force probe, and the corresponding flow channel is the needle tip flow channel.

[0060] Specifically, in step S4, after the probe to be processed is turned over, the laser parameters are adjusted to align the laser beam with the cross arm flow channel, so that the needle tip flow channel and the cross arm flow channel form a connected flow channel during the processing, completing the flow channel processing of the hollow atomic force probe.

[0061] Optionally, step S1 in the present invention specifically includes: adjusting laser parameters according to the flow channel parameters to be processed, wherein the laser parameters include geometric parameters of the laser focal field, laser pulse width and pulse energy.

[0062] Optionally, refer to Figure 1 and Figure 2 , step S3 in the present invention includes:

[0063] S3.1: Use a time shaping module on the laser optical path to adjust the time envelope of the laser;

[0064] S3.2: Using a spatial light modulation module on the optical path after the time shaping module, the laser is modulated from a Gaussian distribution to a beam with a narrow intensity distribution;

[0065] S3.3: Focusing the light beam using a lens group;

[0066] S3.4: irradiate the first processing area with the focused light beam.

[0067] Reference Figure 2 , shows a schematic diagram of applying a time shaping module, a spatial light modulation module and a lens group to a laser light path; wherein TS is a time shaping module, SM is a spatial light modulation module, and L1, L2 and M1 constitute a lens group.

[0068] In this embodiment, a time shaping module is inserted into the laser optical path to adjust the time envelope of the laser; a spatial light modulator is inserted to modulate the laser from a Gaussian distribution to a light beam with a narrow intensity distribution; finally, a lens group is used to realize laser transmission while focusing the light beam, and the focused laser beam is used to irradiate the first processing area to realize the flow channel processing in the first processing area.

[0069] Furthermore, when the second processing area is irradiated in step S5, it is also performed using a focused laser beam, and its specific implementation method is consistent with that in step S3, and will not be described in detail here.

[0070] Specifically, by applying the time shaping module, the spatial light modulation module and the lens group to the optical path of the laser output, a narrow and long focused beam is generated, and the energy in the laser is injected into the processing area, so that the probe material to be processed is instantaneously vaporized, thereby forming a hollow flow channel structure.

[0071] Optionally, the focal length of the focused light beam in the present invention is greater than the length of the flow channel to be processed.

[0072] In this embodiment, the focal length of the focused light beam is greater than the length of the flow channel to be processed, so that the position of the laser and the focused light beam can be adjusted, so that the focused light beam can be directly used to form the flow channel in the cross arm beam and needle tip of the probe to be processed without damaging other parts of the vacuum atomic force probe.

[0073] Further, see Figure 4 and Figure 5 In the present invention, when the processing area of ​​the probe to be processed is irradiated with the focused light beam, the irradiation can be performed from the front of the processing area, or the focused light beam can be adjusted to the inside of the probe to be processed, thereby directly generating a flow channel inside.

[0074] Optionally, the laser in the present invention is a single-pulse ultrafast laser.

[0075] In this embodiment, the laser output by the laser is a single-pulse ultrafast laser, which has the advantages of ultra-fine processing, no thermal influence, material protection, high efficiency and stability, etc., which has positive significance for the hollow atomic force probe processing method of the present invention.

[0076] Optionally, the method for processing a hollow atomic force probe in the present invention further comprises step S7: using hydrofluoric acid to expand the hole of the processed hollow atomic force probe.

[0077] Optionally, the concentration of hydrofluoric acid in the present invention is 2% to 10%.

[0078] In this embodiment, by adjusting the laser processing and combining it with hydrofluoric acid etching, the processing of flow channels of different types and sizes can be achieved.

[0079] In order to more intuitively understand the hollow atomic force probe processing method of the present invention, the present invention is specifically described through the following examples.

[0080] Example 1

[0081] Fabrication of hollow atomic force probe in silicon-based nanoscale flow channel

[0082] S1: Adjust laser parameters according to processing requirements.

[0083] Since the required flow channel diameter is nanometer-level, the appropriate laser pulse width is set to 5-10ps and the laser wavelength is set to 1.5 microns.

[0084] S2: The probe to be processed is fixedly installed, and the probe to be processed is leveled and focused so that the first processing area on the probe to be processed is at the laser focus.

[0085] Specifically, the probe to be processed is a single crystal silicon structure having the geometric appearance of a hollow atomic force probe, and the probe to be processed can be fixed on a processing table by a clamp, glue, etc.

[0086] S3: Outputting laser to irradiate the first processing area; for example, if the length of the flow channel to be processed is 110 microns, the focal length of the focused laser beam should be above 110 microns, specifically, 115 microns. The cross arm beam of the probe to be processed is irradiated by laser.

[0087] S4: After completing the processing of the flow channel in the first processing area, turn off the laser; flip the probe to be processed, and adjust the laser parameters so that the second processing area on the probe to be processed is at the focus of the laser;

[0088] The probe to be processed is turned over so that the focused light beam is located at the needle tip of the probe to be processed.

[0089] S5: outputting laser to irradiate the second processing area;

[0090] The needle tip of the probe to be processed is irradiated by laser to connect the needle tip flow channel with the cross arm beam flow channel.

[0091] S6: After completing the processing of the flow channel in the second processing area, turn off the laser to complete the processing of the hollow atomic force probe.

[0092] After the processing is completed, a silicon-based nanoscale flow channel hollow atomic force probe is obtained.

[0093] Example 2

[0094] Machining of Silicon-Based Micron-Scale Hollow Atomic Force Probe

[0095] S1: Adjust laser parameters according to processing requirements.

[0096] Since the required flow channel diameter is nanometer-level, the appropriate laser pulse width is set to 5-10ps and the laser wavelength is set to 1.5 microns.

[0097] S2: The probe to be processed is fixedly installed, and the probe to be processed is leveled and focused so that the first processing area on the probe to be processed is at the focus of the laser.

[0098] The probe to be processed is a single crystal silicon structure with the geometric appearance of a hollow atomic force probe, and the probe to be processed can be fixed on a processing table by a clamp, glue, etc.

[0099] S3: Outputting laser to irradiate the first processing area; for example, if the length of the flow channel to be processed is 110 microns, the focal length of the focused laser beam should be above 110 microns, specifically, 115 microns. The cross arm beam of the probe to be processed is irradiated by laser.

[0100] S4: After completing the processing of the flow channel in the first processing area, turn off the laser; flip the probe to be processed, and adjust the laser parameters so that the second processing area on the probe to be processed is at the focus of the laser;

[0101] The probe to be processed is turned over so that the focused light beam is located at the needle tip of the probe to be processed.

[0102] S5: outputting laser to irradiate the second processing area;

[0103] The laser output by the laser device is used to irradiate the needle tip portion of the probe to be processed, so that the needle tip flow channel is connected with the cross arm beam flow channel.

[0104] S6: After completing the processing of the flow channel in the second processing area, turn off the laser to complete the processing of the hollow atomic force probe.

[0105] S7: Place the processed hollow atomic force probe into hydrofluoric acid for hole expansion.

[0106] The processed hollow atomic force probe is etched with hydrofluoric acid at a concentration of 2% to 10% for 60 seconds to expand the original nanoscale channel to the micrometer level, thereby completing the processing of the hollow atomic force probe with a micrometer-level pore diameter.

[0107] It should be noted that the above two examples are merely examples of the hollow atomic force probe processing method in the present invention, and are not intended to be specific limitations of the present invention. Those skilled in the art may adjust and set specific parameters according to the hollow atomic force probe processing method in the present invention.

[0108] Example 2

[0109] The present invention also provides a hollow atomic force probe processing system, which is used for any of the hollow atomic force probe processing methods described above. The hollow atomic force probe processing system includes: a laser, a processing table and a flipping device; the processing table is arranged on the flipping device, and is used to fix and install the probe to be processed; the laser is movably arranged above the processing table.

[0110] Optionally, the hollow atomic force probe processing system also includes a time shaping module, a spatial light modulation module and a lens group; the time shaping module, the spatial light modulation module and the lens group are sequentially arranged in the optical path of the laser; wherein the time shaping module is used to adjust the time envelope of the laser; the spatial light modulation module is used to modulate the laser from a Gaussian distribution to a light beam with a narrow and long intensity distribution; the lens group is used to focus the light beam.

[0111] It should be noted that the hollow atomic force probe processing system provided in this embodiment is used for the hollow atomic force probe processing method in Example 1, and is also built based on the hollow atomic force probe processing method in Example 1. Its beneficial effects and specific implementation methods are also consistent with the hollow atomic force probe processing method in Example 1, and will not be elaborated here.

[0112] Example 3

[0113] The present invention also provides a hollow atomic force probe, which is prepared based on any of the hollow atomic force probe processing methods in the above-mentioned embodiment 1. The introduction of the above-mentioned method can refer to embodiment 1, and will not be repeated for the purpose of brevity. The specific structure of the hollow atomic force probe is well known to those skilled in the art, so it will not be elaborated here.

[0114] The hollow atomic force probe provided by the present invention is prepared by the hollow atomic force probe processing method of the present invention, so its accuracy and aspect ratio can fully meet the technical requirements of the field, can be suitable for deposition printing of micro-nano integrated devices, and has positive significance for the development of localized electrochemical deposition.

Claims

1. A method for processing a hollow atomic force probe, characterized in that: The hollow atomic force probe processing method comprises: S1: Adjust laser parameters according to processing requirements; S2: The probe to be processed is fixedly installed, and the probe to be processed is leveled and focused so that the first processing area on the probe to be processed is at the focus of the laser; S3: outputting laser to irradiate the first processing area; S4: After completing the processing of the flow channel in the first processing area, turn off the laser; flip the probe to be processed, and adjust the laser parameters so that the second processing area on the probe to be processed is at the focus of the laser; S5: outputting laser to irradiate the second processing area; S6: After completing the processing of the flow channel in the second processing area, turn off the laser to complete the processing of the hollow atomic force probe.

2. The method for processing a hollow atomic force probe according to claim 1, characterized in that: The step S1 specifically includes: adjusting the laser parameters according to the parameters of the flow channel to be processed, wherein the laser parameters include the geometric parameters of the laser focal field, the laser pulse width and the pulse energy.

3. The method for processing a hollow atomic force probe according to claim 1, characterized in that: The step S3 comprises: S3.1: Use a time shaping module on the laser optical path to adjust the time envelope of the laser; S3.2: Using a spatial light modulation module on the optical path after the time shaping module, the laser is modulated from a Gaussian distribution to a beam with a narrow intensity distribution; S3.3: Focusing the light beam using a lens group; S3.4: irradiate the first processing area with the focused light beam.

4. The method for processing a hollow atomic force probe according to claim 3, characterized in that: The focal length of the focused light beam is greater than the length of the flow channel to be processed.

5. The method for processing a hollow atomic force probe according to claim 1, characterized in that: The laser is a single-pulse ultrafast laser.

6. The method for processing a hollow atomic force probe according to claim 1, characterized in that: The method for processing a hollow atomic force probe further includes step S7: using hydrofluoric acid to expand the hole of the processed hollow atomic force probe.

7. The method for processing a hollow atomic force probe according to claim 6, characterized in that: The concentration of the hydrofluoric acid is 2% to 10%.

8. A hollow atomic force probe processing system, used in the hollow atomic force probe processing method according to any one of claims 1 to 7, characterized in that: The hollow atomic force probe processing system comprises: a laser, a processing table and a turning device; The processing table is arranged on the flipping device and is used for fixing and installing the probe to be processed; the laser is movably arranged above the processing table.

9. The hollow atomic force probe processing system according to claim 8, characterized in that: The hollow atomic force probe processing system also includes a time shaping module, a spatial light modulation module and a lens group; The time shaping module, the spatial light modulation module and the lens group are sequentially arranged on the optical path of the laser; Wherein, the time shaping module is used to adjust the time envelope of the laser; The spatial light modulation module is used to modulate the laser from Gaussian distribution to a light beam with narrow intensity distribution; The lens group is used to focus the light beam.

10. A hollow atomic force probe, characterized in that: The hollow atomic force probe is produced based on the hollow atomic force probe processing method according to any one of claims 1 to 7.

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