Czochralski single crystal growth device

Abstract

The invention relates to the technical field of semiconductor equipment, in particular to a Czochralski single crystal growth device which comprises a bottom plate, a growth furnace fixedly arranged in the middle of the upper end of the bottom plate, a connecting pipe installed at the upper end of the growth furnace and a lifting pipe fixedly connected to the upper end of the connecting pipe. The lower end of the pull-up rotating assembly is fixedly connected to the bottom plate, the side wall of the lifting pipe is fixedly connected with a load dispersing assembly, the lower end of the load dispersing assembly is fixedly connected to the bottom plate, and the multiple supporting pieces are arranged, so that all different cavities are installed on different stress supporting pieces, and the overall stability of the device is guaranteed; meanwhile, the perpendicularity of the installed device can be detected, the installation precision is ensured, after the cavity is opened, the cavity door can be stably supported in time, the uniformity of load dispersion is effectively ensured, and therefore the production quality of the single crystal silicon rod is improved.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor equipment, in particular to a Czochralski single crystal growth device. Background Art

[0002] Single crystal silicon is a substance formed by silicon atoms in a certain arrangement and is an important component of crystalline materials. At present, there are two main methods for growing single crystal silicon: the Czochralski method (CA method) and the melting zone method (FZ method). Among them, the Czochralski method is the more mainstream crystal growth process, which can support the production of large-size crystal rods. Its basic principle is to heat the silicon raw material placed in the crucible to make it molten, and to contact the seed crystal placed above the furnace body with the molten body. In the process of the seed crystal constantly rotating and moving up and down, the molten silicon will condense and grow along the surface of the seed crystal, and finally form a crystal rod.

[0003] At present, when the existing single crystal growth device is in use, all its chambers are installed on the same column, so that when producing large-diameter single crystal silicon rods, the size of the device will be tilted in the vertical or horizontal direction, resulting in uneven load distribution in each chamber, thereby affecting the production size of the single crystal silicon rod and reducing its production quality. Summary of the invention

[0004] In view of the shortcomings of the prior art, the present invention provides a direct-pull single crystal growth device. By arranging a plurality of support members, each different chamber is installed on a different load-bearing support member, thereby ensuring the overall stability of the device. At the same time, the verticality of the installed device can be detected to ensure the installation accuracy. After the chamber is opened, the chamber door can be stably supported in time, effectively ensuring the uniformity of load distribution, thereby improving the production quality of single crystal silicon rods.

[0005] The technical solution adopted by the present invention to solve the above technical problems is: a CZ single crystal growth device, comprising a bottom plate, a growth furnace fixedly arranged in the middle of the upper end of the bottom plate, a connecting pipe installed at the upper end of the growth furnace, and a lifting pipe fixedly connected to the upper end of the connecting pipe, a lifting rotating assembly is arranged on the side of the growth furnace, the lower end of the lifting rotating assembly is fixedly connected to the bottom plate, a load dispersing assembly is fixedly connected to the side wall of the lifting pipe, and the lower end of the load dispersing assembly is fixedly connected to the bottom plate;

[0006] The inner wall of the lifting tube is evenly provided with semi-cylindrical sliding grooves along its circumference, and the outer wall of the lifting tube is provided with a discharge port, and a cavity opening and closing door is installed in the discharge port;

[0007] The load distribution component includes a rectangular column, which is fixedly connected to the side of the growth furnace and located on the upper end surface of the bottom plate. The interior of the rectangular column is a hollow structure. A number of positioning parts are fixedly installed on the outer wall of the rectangular column. A stress beam is fixedly connected to the side wall of the positioning part. The end of the stress beam away from the positioning part is fixedly connected to the side wall of the lifting tube. A support unit that cooperates with the opening and closing chamber door is fixedly installed near the lower end of the side wall of the rectangular column.

[0008] Preferably, reinforcing ribs are evenly arranged between the lower end of the outer side wall of the growth furnace and the bottom plate along the circumferential direction of the growth furnace.

[0009] Preferably, a heater is installed above the bottom electrode inside the growth furnace, a graphite bearing is installed near the lower end of the inner side of the heater, a graphite base is arranged in the middle of the bottom of the growth furnace, a quartz crucible is supported on the upper end of the graphite base, and an insulating layer is arranged on the inner wall of the growth furnace.

[0010] Preferably, graphite support columns are evenly installed along the circumference of the upper edge of the quartz crucible, the diameter of the graphite support columns gradually decreases from top to bottom, and a plurality of coaxially arranged graphite rings are fixedly installed on the upper end of the graphite support columns.

[0011] Preferably, the diameter of each graphite ring gradually increases from the inner ring to the outer ring.

[0012] Preferably, the lifting and rotating assembly includes a lifting unit, which is fixedly provided on the side of the lifting tube, a redirecting wheel is installed on the upper end of the lifting unit, a bracket is fixedly provided on the side of the upper end of the lifting unit, a pulley is rotatably provided on the inner side of the bracket away from the redirecting wheel, a traction rope is fixedly bolted on the lifting unit, the other end of the traction rope passes over the redirecting wheel and the pulley and is fixedly bolted to a rotating motor, the rotating motor is installed on a limiting chassis, the limiting chassis and the semi-cylindrical slide groove are slidably matched, the output shaft of the rotating motor extends to the bottom of the limiting chassis and is fixedly connected to a seed crystal chuck, and a detection unit is fixedly connected to the side of the lifting unit, and the detection unit is attached to the side wall of the lifting tube.

[0013] Preferably, the lifting unit includes a horizontal plate, which is fixedly connected to the side wall of the growth furnace, a vertical pole is fixedly installed at the end corner of the horizontal plate away from the growth furnace, the lower end of the vertical pole is fixedly connected to the bottom plate, a driving motor is installed on the lower end surface of the horizontal plate, the output shaft of the driving motor extends to the top of the horizontal plate and is fixedly installed with a driving gear, a reduction gear is meshed on the side of the driving gear, the reduction gear is installed at the lower end of the screw, a top plate is arranged at the upper end of the screw, the top plate and the horizontal plate are fixedly connected by a sliding rod, and a lifting block is screwed on the screw.

[0014] Preferably, a sliding cylinder is sleeved on the position of the sliding rod corresponding to the lifting block, and a limiting rod is fixedly installed between the sliding cylinder and the lifting block.

[0015] Preferably, the detection unit includes a folding rod, which is fixedly connected to the side wall of the lifting block, and an arc-shaped hoop is fixedly connected to the upper end of the folding rod. Installation grooves are evenly opened along the arc direction in the concave arc surface of the arc hoop, and a piezoelectric contact switch is slidably installed in the installation groove through an extrusion spring. A detection light is arranged at the position of the upper end of the arc hoop corresponding to the installation groove. The piezoelectric contact switch is connected to the detection light through an electrical signal. When the piezoelectric contact switch is in the initial position, it is in contact with the side wall of the lifting tube but no extrusion force is generated.

[0016] Preferably, the support unit includes an electric push rod, which is fixedly installed on the side wall of the rectangular column near the lower end, an L-shaped rod is fixedly connected to the upper end of the electric push rod, a rectangular slide groove is provided on the side wall of the rectangular column, one end of the L-shaped rod is slidably installed in the rectangular slide groove, and the other end of the L-shaped rod is fixedly connected to an arc-shaped support platform, and a limited arc groove is provided on the upper end surface of the arc-shaped support platform.

[0017] Beneficial effects of the present invention:

[0018] 1. Install the growth furnace on the bottom plate to ensure its overall stability during operation. Set the lifting tube to be detachable and support it through the load distribution component when in use. At the same time, the load distribution component can disperse the gravity of the chamber door, ensuring the uniformity of the force distribution of the lifting tube and the verticality of the single crystal silicon rod during the lifting process, thereby ensuring its production quality;

[0019] 2. The set pulling and rotating assembly can detect the installation verticality of the lifting tube before the overall device is operated, so as to ensure the installation accuracy and avoid the influence of installation errors on the single crystal silicon rod. At the same time, the pulling and rotating assembly and the growth furnace are fixedly connected to ensure the overall consistency of the device, so that the load of the single crystal silicon rod will not be concentrated in one direction during the lifting process, thereby improving the production quality of the single crystal silicon rod. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The present invention is further described below in conjunction with the accompanying drawings and embodiments.

[0021] Figure 1 is a first three-dimensional structural schematic diagram of the present invention;

[0022] Figure 2 is a second three-dimensional structural schematic diagram of the present invention;

[0023] Figure 3 It is a schematic diagram of the three-dimensional structure inside the growth furnace of the present invention;

[0024] Figure 4 It is a partial three-dimensional structural schematic diagram of the pulling unit in the present invention;

[0025] Figure 5It is a schematic diagram of the three-dimensional connection structure between the lifting pipe, the traction rope, the rotating motor, the limiting chassis and the seed crystal chuck in the present invention;

[0026] Figure 6 It is a schematic diagram of the three-dimensional connection structure of the base plate, the growth furnace, the connecting pipe, the rising pipe and the load dispersing assembly in the present invention;

[0027] Figure 7 It is a schematic diagram of the three-dimensional connection structure between the screw rod, the lifting block, the sliding rod, the sliding cylinder, the limiting rod and the detection unit in the present invention;

[0028] Figure 8 It is a schematic diagram of the three-dimensional structure of the detection unit in the present invention;

[0029] Fig. 9 The present invention Figure 8 A is an enlarged structural diagram of FIG.

[0030] In the figure:

[0031] 1. Bottom plate;

[0032] 2. Growth furnace; 21. Reinforcement ribs; 22. Electrodes; 23. Heater; 24. Graphite bearing; 25. Graphite base; 26. Quartz crucible; 261. Graphite support column; 262. Graphite ring; 27. Insulation layer; 3. Connecting pipe; 4. Lifting pipe; 41. Semi-cylindrical chute; 42. Opening and closing chamber door; 5. Pull up and rotate the assembly; 51, lifting unit; 511, horizontal plate; 512, vertical pole; 513, driving motor; 514, driving gear; 515, reduction gear; 516, screw rod; 517, lifting block; 518, sliding rod; 5181, sliding cylinder; 5182, limiting rod; 519, top plate; 52. Redirecting wheel; 53. Bracket; 54. Pulley; 55. Traction rope; 56. Rotating motor; 57. Position limiting chassis; 58. Seed crystal chuck; 59. Detection unit; 591. Folding rod; 592. Arc hoop; 593. Piezoelectric contact switch; 594. Extrusion spring; 595. Detection lamp; 6. Load dispersing assembly; 61. Rectangular column; 62. Positioning member; 63. Stress beam; 64. Support unit; 641. Electric push rod; 642. L-shaped rod; 643. Arc-shaped support platform; 644. Limiting arc-shaped groove. DETAILED DESCRIPTION

[0033] In order to make the technical means, creative features, objectives and effects achieved by the present invention easy to understand, the present invention is further explained below in conjunction with specific implementation methods.

[0034] Embodiment 1:

[0035] See also Figures 1 to 3 as well as Figure 5 A Czochralski single crystal growth device comprises a base plate 1, a growth furnace 2 fixedly arranged at the middle of the upper end of the base plate 1, a connecting pipe 3 installed at the upper end of the growth furnace 2, and a lifting pipe 4 fixedly connected to the upper end of the connecting pipe 3.

[0036] Reinforcing ribs 21 are evenly arranged between the lower end of the outer wall of the growth furnace 2 and the bottom plate 1 along the circumferential direction of the growth furnace 2. An electrode 22 is arranged at the bottom of the inner side of the growth furnace 2. A heater 23 is installed above the electrode 22. A graphite bearing 24 is installed near the lower end of the inner side of the heater 23. A graphite base 25 is arranged in the middle of the bottom of the growth furnace 2. A quartz crucible 26 is supported at the upper end of the graphite base 25. An insulating layer 27 is arranged on the inner wall of the growth furnace 2.

[0037] The upper edge of the quartz crucible 26 is evenly equipped with graphite support columns 261 along its circumference, and the diameter of the graphite support columns 261 gradually decreases from top to bottom. A plurality of coaxially arranged graphite rings 262 are fixedly installed on the upper end of the graphite support columns 261, and the ring diameter of each graphite ring 262 gradually increases from the inner circle to the outer circle.

[0038] The inner wall of the lifting tube 4 is evenly provided with semi-cylindrical sliding grooves 41 along its circumference, and the outer wall of the lifting tube 4 is provided with a discharge port, and a lifting and closing chamber door 42 is installed in the discharge port.

[0039] During specific operation, the single crystal silicon raw material is first added into the quartz crucible 26 manually, and then the lifting tube 4 is fixedly installed on the upper end of the connecting tube 3 and the connection is sealed, and the electrode 22 is powered to drive the heater 23 to heat to 1400°C-1500°C, thereby melting the single crystal silicon raw material in the quartz crucible 26, and the growth furnace 2 is evacuated by an external vacuum equipment and an inert gas is introduced to maintain its internal pressure, thereby stabilizing the liquid level of the molten silicon raw material, so that the temperature gradient of the liquid surface promotes the convection of the thermal capillary phenomenon of the surface tension difference.

[0040] Embodiment 2:

[0041] The technical solution is basically the same as that of the first embodiment, see Figures 1 to 4 as well as Figures 7 to 9 The difference is that: a lifting and rotating assembly 5 is provided on the side of the growth furnace 2, and the lower end of the lifting and rotating assembly 5 is fixedly connected to the bottom plate 1.

[0042] The lifting and rotating assembly 5 includes a lifting unit 51, which is fixedly provided on the side of the lifting tube 4, and a redirecting wheel 52 is installed on the upper end of the lifting unit 51. A bracket 53 is fixedly provided on the side of the upper end of the lifting unit 51, and a pulley 54 is rotatably provided on the inner side of the bracket 53 away from the redirecting wheel 52. A traction rope 55 is fixedly bolted to the lifting unit 51, and the other end of the traction rope 55 passes over the redirecting wheel 52 and the pulley 54 and is fixedly bolted to a rotating motor 56, which is installed on a limiting chassis 57, and the limiting chassis 57 and the semi-cylindrical slide 41 are slidably matched, and the output shaft of the rotating motor 56 extends to the bottom of the limiting chassis 57 and is fixedly connected to a seed crystal chuck 58, and a detection unit 59 is fixedly connected to the side of the lifting unit 51, and the detection unit 59 is attached to the side wall of the lifting tube 4.

[0043] The lifting unit 51 includes a horizontal plate 511, which is fixedly connected to the side wall of the growth furnace 2. A vertical pole 512 is fixedly installed at the end corner of the horizontal plate 511 away from the growth furnace 2. The lower end of the vertical pole 512 is fixedly connected to the bottom plate 1. A driving motor 513 is installed on the lower end surface of the horizontal plate 511. The output shaft of the driving motor 513 extends to the top of the horizontal plate 511 and is fixedly installed with a driving gear 514. A reduction gear 515 is meshed on the side of the driving gear 514. The reduction gear 515 is installed at the lower end of the screw rod 516. A top plate 519 is arranged on the upper end of the screw rod 516. The top plate 519 and the horizontal plate 511 are fixedly connected by a sliding rod 518. A lifting block 517 is screwed on the screw rod 516.

[0044] The position of the sliding rod 518 corresponding to the lifting block 517 is sleeved with a sliding cylinder 5181 , and a limiting rod 5182 is fixedly installed between the sliding cylinder 5181 and the lifting block 517 .

[0045] The detection unit 59 includes a folding rod 591, and the folding rod 591 is fixedly connected to the side wall of the lifting block 517, and an arc hoop 592 is fixedly connected to the upper end of the folding rod 591. The concave arc surface of the arc hoop 592 is evenly provided with installation grooves along its arc direction. A piezoelectric contact switch 593 is slidably installed in the installation groove through an extrusion spring 594. A detection light 595 is set at the position of the upper end of the arc hoop 592 corresponding to the installation groove. The piezoelectric contact switch 593 is connected to the detection light 595 by means of electrical signals. When the piezoelectric contact switch 593 is in the initial position, it is in contact with the side wall of the lifting tube 4 but no extrusion force is generated.

[0046] During specific operation, after the lifting tube 4 is fixedly installed on the upper end of the connecting tube 3, the lifting and closing chamber door 42 is opened manually, and then the seed crystal is installed to the lower end of the seed crystal chuck 58, and then the lifting and closing chamber door 42 is closed, and the driving motor 513 is started. The driving motor 513 drives the driving gear 514 to reciprocate, and under the meshing of the reduction gear 515, the screw 516 will reciprocate synchronously. Due to the existence of the limit rod 5182 and the slide cylinder 5181, the lifting block 517 will reciprocate up and down along the screw 516, and at this time, the lifting block 517 will drive the folding rod 591 and the arc hoop 5 92 reciprocates up and down. The arc hoop 592 can drive the piezoelectric contact switch 593 to reciprocate up and down along the lifting tube 4 during the reciprocating motion. If the lifting tube 4 is installed at an angle relative to the installation position of the connecting tube 3, the lifting tube 4 will exert a certain pressure on the piezoelectric contact switch 593, so that the internal switch thereof is turned on. At this time, the detection light 595 lights up. When the detection light 595 is manually monitored to be in the on state, the installation verticality of the lifting tube 4 should be adjusted in time until the detection light 595 is in the normally closed state during the reciprocating motion.

[0047] When the temperature of the single crystal silicon melt in the quartz crucible 26 is stabilized, the driving motor 513 is controlled to drive the rotating motor 56, the limiting chassis 57, the seed crystal chuck 58 and the seed crystal to slowly descend into the single crystal silicon melt, and then the rotating motor 56 is started, and the seed crystal chuck 58 and the seed crystal are driven to rotate at a speed of 10-14 rpm by the rotating motor 56, and at the same time, the driving motor 513 drives them to be lifted upward at a certain speed. At this time, the single crystal silicon melt will adhere to the surface of the seed crystal and form a new crystal rod during the lifting process. When the diameter of the crystal rod reaches the process requirements, the lifting speed is gradually increased so that the crystal rod growth enters the equal diameter growth stage and is maintained within a certain diameter control tolerance range. When the length of the crystal rod reaches the predetermined requirement, the diameter of the crystal rod is gradually reduced until it is reduced to a point away from the liquid surface of the single crystal silicon melt, and the finishing is completed;

[0048] During the crystal rod lifting process, the graphite support column 261 with a small bottom and a large top can form an axial temperature gradient in the numerical direction in the surrounding environment of the crystal rod after the crystal rod leaves the liquid surface of the single crystal silicon melt, and the graphite ring 262 can absorb impurity particles in the atmosphere of the single crystal silicon raw material and reduce the defects of carbon inclusions in the crystal rod growth process. At the same time, since the ring diameter of each graphite ring 262 gradually increases from the inner circle to the outer circle, a smaller radial temperature gradient will be formed in the radial direction of the crystal rod, which will cooperate with the axial temperature gradient, thereby helping to improve the growth quality of the crystal rod.

[0049] Embodiment three:

[0050] The technical solution is basically the same as that of the first embodiment, see Figure 1 , Figure 2 , Figure 5 as well as Figure 6 The difference is that: the side wall of the lifting pipe 4 is fixedly connected with a load distribution component 6, and the lower end of the load distribution component 6 is fixedly connected to the bottom plate 1.

[0051] The load distribution component 6 includes a rectangular column 61, which is fixedly connected to the side of the growth furnace 2 and located on the upper end surface of the bottom plate 1. The interior of the rectangular column 61 is a hollow structure. A number of positioning members 62 are fixedly installed on the outer wall of the rectangular column 61. A stress beam 63 is fixedly connected to the side wall of the positioning member 62. The end of the stress beam 63 away from the positioning member 62 is fixedly connected to the side wall of the lifting tube 4. A support unit 64 that cooperates with the opening and closing chamber door 42 is fixedly installed on the side wall of the rectangular column 61 near the lower end.

[0052] The support unit 64 includes an electric push rod 641, which is fixedly installed on the side wall of the rectangular column 61 near the lower end. An L-shaped rod 642 is fixedly connected to the upper end of the electric push rod 641. A rectangular slide groove is provided on the side wall of the rectangular column 61. One end of the L-shaped rod 642 is slidably installed in the rectangular slide groove. The other end of the L-shaped rod 642 is fixedly connected to an arc-shaped support platform 643. A limited arc-shaped groove 644 is provided on the upper end surface of the arc-shaped support platform 643.

[0053] During specific operation, during the normal operation of the growth furnace 2, the arrangement of the rectangular column 61, the positioning member 62 and the stress beam 63 can play a certain supporting role on the lifting tube 4, ensuring that the internal stress of the lifting tube 4 is uniform during the growth of the crystal rod, thereby ensuring the growth quality of the crystal rod. In addition, each time the opening and closing chamber door 42 is opened, the electric push rod 641 will drive the L-shaped rod 642 and the arc-shaped support platform 643 to move upward, and then play a certain supporting role on the opening and closing chamber door 42 through the limiting arc-shaped groove 644, thereby ensuring that the load is evenly distributed and further ensuring the production quality of the crystal rod.

[0054] The working principle of the present invention when in use:

[0055] One: firstly, the single crystal silicon raw material is manually added into the quartz crucible 26, then the lifting tube 4 is fixedly installed on the upper end of the connecting tube 3 and the connection is sealed, the electrode 22 is powered, and the heater 23 is driven by the electrode 22 to heat to 1400°C-1500°C, so that the single crystal silicon raw material in the quartz crucible 26 is melted, and the growth furnace 2 is evacuated by an external vacuum device and an inert gas is introduced to maintain its internal pressure, so as to stabilize the liquid level of the molten silicon raw material, so that the liquid surface temperature gradient promotes the convection of the thermocapillary phenomenon of the surface tension difference;

[0056] Second: After the lifting tube 4 is fixedly installed on the upper end of the connecting tube 3, the lifting and closing chamber door 42 is opened manually, and then the seed crystal is installed to the lower end of the seed crystal chuck 58, and then the lifting and closing chamber door 42 is closed, and the driving motor 513 is started. The driving motor 513 drives the driving gear 514 to reciprocate. Under the meshing of the reduction gear 515, the screw 516 will reciprocate synchronously. Due to the existence of the limit rod 5182 and the slide 5181, the lifting block 517 will reciprocate up and down along the screw 516. At this time, the lifting block 517 will drive the folding rod 591 and the arc hoop 592 The arc hoop 592 can drive the piezoelectric contact switch 593 to move up and down along the lifting tube 4 during the up and down reciprocating motion. If the lifting tube 4 is installed at an angle relative to the installation position of the connecting tube 3, the lifting tube 4 will exert a certain pressure on the piezoelectric contact switch 593, thereby turning on the internal switch. At this time, the detection light 595 lights up. When the detection light 595 is manually monitored to be on, the installation verticality of the lifting tube 4 should be adjusted in time until the detection light 595 is in a normally closed state during the up and down reciprocating motion.

[0057] 3. When the temperature of the single crystal silicon melt in the quartz crucible 26 is stabilized, the driving motor 513 is controlled to drive the rotating motor 56, the limiting chassis 57, the seed crystal chuck 58 and the seed crystal to slowly descend into the single crystal silicon melt, and then the rotating motor 56 is started, and the rotating motor 56 drives the seed crystal chuck 58 and the seed crystal to rotate at a speed of 10-14 rpm, and at the same time, the driving motor 513 drives them to be lifted upward at a certain speed. At this time, the single crystal silicon melt will adhere to the surface of the seed crystal and form a new crystal rod during the lifting process. When the diameter of the crystal rod reaches the process requirements, the lifting speed is gradually increased, so that the crystal rod growth enters the equal diameter growth stage and is maintained within a certain diameter control tolerance range. When the length of the crystal rod reaches the predetermined requirement, the diameter of the crystal rod is gradually reduced until it is reduced to a point away from the liquid surface of the single crystal silicon melt, and the end is completed;

[0058] Fourth: During the process of lifting the crystal rod, the graphite support column 261 with a small bottom and a large top can form an axial temperature gradient in the numerical direction in the surrounding environment of the crystal rod after the crystal rod leaves the liquid surface of the single crystal silicon melt, and the graphite ring 262 can absorb the impurity particles in the atmosphere of the single crystal silicon raw material, reducing the defects of the carbon inclusions in the growth process of the crystal rod. At the same time, since the ring diameter of each of the graphite rings 262 gradually increases from the inner ring to the outer ring, a smaller radial temperature gradient will be formed in the radial direction of the crystal rod, which cooperates with the axial temperature gradient, thereby facilitating the improvement of the growth quality of the crystal rod;

[0059] 5: During the normal operation of the growth furnace 2, the rectangular column 61, the positioning member 62 and the stress beam 63 can provide a certain support to the lifting tube 4, ensuring that the internal stress of the lifting tube 4 is uniform during the growth of the crystal rod, thereby ensuring the growth quality of the crystal rod. In addition, each time the chamber door 42 is opened, the electric push rod 641 will drive the L-shaped rod 642 and the arc-shaped support platform 643 to move upward, and then provide a certain support to the chamber door 42 through the limiting arc-shaped groove 644, thereby ensuring that the load is evenly distributed and further ensuring the production quality of the crystal rod.

[0060] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention. The scope of the present invention is defined by the attached claims and their equivalents.

Claims

1. A Czochralski single crystal growth device, comprising a base plate (1), a growth furnace (2) fixedly arranged at the middle of the upper end of the base plate (1), a connecting pipe (3) installed at the upper end of the growth furnace (2), and a lifting pipe (4) fixedly connected to the upper end of the connecting pipe (3), characterized in that: The growth furnace (2) is provided with a lifting and rotating assembly (5) on the side, the lower end of the lifting and rotating assembly (5) is fixedly connected to the bottom plate (1), the side wall of the lifting tube (4) is fixedly connected to a load dispersing assembly (6), the lower end of the load dispersing assembly (6) is fixedly connected to the bottom plate (1); The inner wall of the lifting tube (4) is provided with semi-cylindrical sliding grooves (41) evenly arranged along its circumference, and the outer wall of the lifting tube (4) is provided with a discharge port, and a chamber opening and closing door (42) is installed in the discharge port; The load distribution component (6) comprises A rectangular column (61) is fixedly connected to the side of the growth furnace (2) and located at the upper end surface of the bottom plate (1), and the interior of the rectangular column (61) is a hollow structure; Positioning members (62), a plurality of positioning members (62) are fixedly mounted on the outer side wall of the rectangular column (61); A stress cross beam (63), the side wall of the positioning member (62) being fixedly connected with the stress cross beam (63), and the end of the stress cross beam (63) away from the positioning member (62) being fixedly connected to the side wall of the lifting pipe (4); A support unit (64) is fixedly mounted on the side wall of the rectangular column (61) near the lower end thereof and cooperates with the opening and closing chamber door (42).

2. The Czochralski single crystal growth device according to claim 1, characterized in that: Reinforcing ribs (21) are evenly arranged between the lower end of the outer wall of the growth furnace (2) and the bottom plate (1) along the circumferential direction of the growth furnace (2).

3. The Czochralski single crystal growth device according to claim 1, characterized in that: The growth furnace (2) has an electrode (22) at the bottom, a heater (23) is installed above the electrode (22), a graphite bearing (24) is installed near the lower end of the inner side of the heater (23), a graphite base (25) is arranged in the middle of the bottom of the growth furnace (2), a quartz crucible (26) is supported at the upper end of the graphite base (25), and an insulating layer (27) is arranged on the inner wall of the growth furnace (2).

4. The Czochralski single crystal growth device according to claim 3, characterized in that: The upper edge of the quartz crucible (26) is evenly mounted with graphite support columns (261) along its circumference, the diameter of the graphite support columns (261) gradually decreases from top to bottom, and a plurality of coaxially arranged graphite rings (262) are fixedly mounted on the upper end of the graphite support columns (261).

5. The Czochralski single crystal growth device according to claim 4, characterized in that: The ring diameter of each graphite ring (262) gradually increases from the inner ring to the outer ring.

6. The Czochralski single crystal growth device according to claim 1, characterized in that: The lifting and rotating assembly (5) comprises a lifting unit (51), the lifting unit (51) is fixedly arranged on the side of the lifting tube (4), a redirecting wheel (52) is installed on the upper end of the lifting unit (51), a bracket (53) is fixedly arranged on the side of the upper end of the lifting unit (51), a pulley (54) is rotatably arranged on the inner side of the bracket (53) away from the redirecting wheel (52), a traction rope (55) is fixedly bolted on the lifting unit (51), and the other end of the traction rope (55) is connected to the redirecting wheel (52) and the other end of the traction rope (55) is connected to the redirecting wheel (52). A rotating motor (56) is passed over and fixedly bolted above the wheel (52) and the pulley (54); the rotating motor (56) is mounted on a limiting chassis (57); the limiting chassis (57) and the semi-cylindrical slide groove (41) are slidably matched; the output shaft of the rotating motor (56) extends to the bottom of the limiting chassis (57) and is fixedly connected to a seed crystal chuck (58); a detection unit (59) is fixedly connected to the side of the lifting unit (51); and the detection unit (59) is attached to the side wall of the lifting tube (4).

7. The Czochralski single crystal growth device according to claim 6, characterized in that: The lifting unit (51) comprises a horizontal plate (511), the horizontal plate (511) being fixedly connected to the side wall of the growth furnace (2), a vertical pole (512) being fixedly installed at the end corner of the horizontal plate (511) away from the growth furnace (2), the lower end of the vertical pole (512) being fixedly connected to the bottom plate (1), a driving motor (513) being installed on the lower end surface of the horizontal plate (511), the output shaft of the driving motor (513) extending above the horizontal plate (511) and being fixedly installed with a driving gear (514), a reduction gear (515) being meshed on the side of the driving gear (514), the reduction gear (515) being installed at the lower end of a screw rod (516), a top plate (519) being arranged at the upper end of the screw rod (516), the top plate (519) and the horizontal plate (511) being fixedly connected via a sliding rod (518), and a lifting block (517) being screwed onto the screw rod (516).

8. The Czochralski single crystal growth device according to claim 7, characterized in that: A sliding cylinder (5181) is sleeved on the position of the sliding rod (518) corresponding to the lifting block (517), and a limiting rod (5182) is fixedly installed between the sliding cylinder (5181) and the lifting block (517).

9. The Czochralski single crystal growth device according to claim 7, characterized in that: The detection unit (59) comprises a folding rod (591), the folding rod (591) is fixedly connected to the side wall of the lifting block (517), the upper end of the folding rod (591) is fixedly connected to the arc hoop (592), the concave arc surface of the arc hoop (592) is evenly provided with installation grooves along its arc direction, a piezoelectric contact switch (593) is slidably installed in the installation groove through an extrusion spring (594), a detection light (595) is arranged at the position of the upper end of the arc hoop (592) corresponding to the installation groove, the piezoelectric contact switch (593) is connected to the detection light (595) by means of an electrical signal, and the piezoelectric contact switch (593) is in an initial position in contact with the side wall of the lifting tube (4) but does not generate an extrusion force.

10. The Czochralski single crystal growth device according to claim 1, characterized in that: The support unit (64) comprises an electric push rod (641), the electric push rod (641) is fixedly installed at a position near the lower end of the side wall of the rectangular column (61), an L-shaped rod (642) is fixedly connected to the upper end of the electric push rod (641), a rectangular slide groove is provided on the side wall of the rectangular column (61), one end of the L-shaped rod (642) is slidably installed in the rectangular slide groove, and the other end of the L-shaped rod (642) is fixedly connected to an arc-shaped support platform (643), and a limited arc-shaped groove (644) is provided on the upper end surface of the arc-shaped support platform (643).

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