A Czochralski single crystal growth apparatus

Abstract

The application relates to the technical field of semiconductor equipment, in particular to a straight-drawing single crystal growth device which comprises a bottom plate, a growth furnace fixedly arranged at the middle part of the upper end of the bottom plate, a connecting pipe installed at the upper end of the growth furnace, and a lifting pipe fixedly connected to the upper end of the connecting pipe, the side part of the growth furnace is provided with a lifting rotating assembly, the lower end of the lifting rotating assembly is fixedly connected to the bottom plate, the side wall of the lifting pipe is fixedly connected with a load dispersion assembly, the lower end of the load dispersion assembly is fixedly connected to the bottom plate, a plurality of supporting pieces are arranged, each different cavity is installed on a different stress supporting piece, the stability of the device is guaranteed, the perpendicularity of the installed device can be detected, the installation precision is ensured, the cavity door can be stably supported in time after the cavity is opened, the uniformity of the load dispersion is effectively guaranteed, and therefore the production quality of the single crystal silicon rod is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, specifically to a Czochralski single crystal growth apparatus. Background Technology

[0002] Monocrystalline silicon is a substance formed by silicon atoms arranged in a specific pattern, and it is an important component of crystalline materials. Currently, there are two main methods for growing monocrystalline silicon: the Czochralski (CA) method and the zone melting (FZ) method. The Czochralski method is currently the more mainstream crystal growth process, which can support the production of large-sized crystal rods. Its basic principle is to heat the silicon raw material placed in a crucible to make it a melt, and then have a seed crystal placed above the furnace contact the melt. As the seed crystal rotates and moves up and down, the silicon in the melt will condense and grow along the surface of the seed crystal, eventually forming a crystal rod.

[0003] Currently, in the use of existing single crystal growth equipment, all chambers are installed on the same column. This causes the equipment size to tilt vertically or horizontally when producing large-diameter single crystal silicon rods, resulting in uneven load distribution in each chamber. This affects the production size of the single crystal silicon rods and reduces their production quality. Summary of the Invention

[0004] To address the shortcomings of existing technologies, this invention provides a Czochralski single crystal growth apparatus. By setting multiple support components, each different chamber is installed on a different load-bearing support component, ensuring the overall stability of the apparatus. At the same time, it can detect the verticality of the apparatus after installation to ensure installation accuracy. After the chamber is opened, it can promptly provide stable support for the chamber door, effectively ensuring the uniformity of load distribution, thereby improving the production quality of single crystal silicon rods.

[0005] The technical solution adopted by the present invention to solve the above-mentioned technical problems is: a Czochralski single crystal growth device, including a base plate, a growth furnace fixedly disposed in the middle of the upper part of the base plate, a connecting pipe installed on the upper part of the growth furnace, and a lifting pipe fixedly connected to the upper part of the connecting pipe. A lifting and rotating assembly is provided on the side of the growth furnace, and the lower end of the lifting and rotating assembly is fixedly connected to the base plate. A load dispersing assembly is fixedly connected to the side wall of the lifting pipe, and the lower end of the load dispersing assembly is fixedly connected to the base plate.

[0006] The inner wall of the lifting pipe is uniformly provided with semi-cylindrical grooves along its circumference, and the outer wall of the lifting pipe is provided with a discharge port, and a door for opening and closing is installed in the discharge port.

[0007] The load distribution component includes a rectangular column. A rectangular column is fixedly connected to the side of the growth furnace and to the upper surface of the bottom plate. The rectangular column has a hollow structure inside. Several positioning components are fixedly installed on the outer wall of the rectangular column. Stress beams are fixedly connected to the side walls of the positioning components. The end of the stress beam away from the positioning components is fixedly connected to the side wall of the lifting pipe. A support unit that cooperates with the opening and closing chamber door is fixedly installed on the side wall of the rectangular column near the lower end.

[0008] Preferably, reinforcing ribs are uniformly arranged between the lower end of the outer wall of the growth furnace and the bottom plate along the circumferential direction of the growth furnace.

[0009] Preferably, the growth furnace has an inner bottom electrode, a heater installed above the electrode, a graphite bearing installed near the lower end of the heater, a graphite base in the middle of the bottom of the growth furnace, a quartz crucible supported on the upper end of the graphite base, and an insulation layer on the inner wall of the growth furnace.

[0010] Preferably, graphite support columns are uniformly installed along the circumference of the upper edge of the quartz crucible, the diameter of the graphite support columns gradually decreases from top to bottom, and several coaxially arranged graphite rings are fixedly installed at the upper end of the graphite support columns.

[0011] Preferably, the diameter of each graphite ring gradually increases from the inner ring to the outer ring.

[0012] Preferably, the lifting and rotating assembly includes a lifting unit, which is fixedly installed on the side of the lifting tube. A deflector wheel is installed on the upper end of the lifting unit, and a bracket is fixedly installed on the upper side of the lifting unit. A pulley is rotatably installed on the inner side of the bracket away from the deflector wheel. A traction rope is fixedly bolted to the lifting unit. The other end of the traction rope passes over the deflector wheel and the pulley and is fixedly bolted to a rotary motor. The rotary motor is installed on a limiting chassis. The limiting chassis and the semi-cylindrical slide are in sliding cooperation. The output shaft of the rotary motor extends to the lower part of the limiting chassis and is fixedly connected to a seed crystal chuck. A detection unit is fixedly connected to the side of the lifting unit and is attached to the side wall of the lifting tube.

[0013] Preferably, the lifting unit includes a horizontal plate, which is fixedly connected to the side wall of the growth furnace. A vertical pole is fixedly installed at the corner of the horizontal plate away from the growth furnace. The lower end of the vertical pole is fixedly connected to the bottom plate. A drive motor is installed on the lower end face of the horizontal plate. The output shaft of the drive motor extends to the top of the horizontal plate and is fixedly installed with a drive gear. A reduction gear meshes with the side of the drive gear. The reduction gear is installed at the lower end of the screw. A top plate is provided at the upper end of the screw. The top plate and the horizontal plate are fixedly connected by a slide rod. A lifting block is screwed onto the screw.

[0014] Preferably, a sliding cylinder is sleeved on the sliding rod at the position corresponding to the lifting block, and a limit rod is fixedly installed between the sliding cylinder and the lifting block.

[0015] Preferably, the detection unit includes a folded rod, a folded rod is fixedly connected to the side wall of the lifting block, an arc-shaped hoop is fixedly connected to the upper end of the folded rod, and an installation groove is uniformly opened along the arc direction in the concave arc surface of the arc-shaped hoop. A piezoelectric contact switch is slidably installed in the installation groove by a compression spring. A detection light is set at the upper end of the arc-shaped hoop corresponding to the position of the installation groove. The piezoelectric contact switch is connected to the detection light by an electrical signal. In the initial position, the piezoelectric contact switch is in contact with the side wall of the lifting tube but does not generate a compressive force.

[0016] Preferably, the support unit includes an electric push rod. The electric push rod is fixedly installed on the side wall of the rectangular column near the lower end. An L-shaped rod is fixedly connected to the upper end of the electric push rod. A rectangular groove is opened on the side wall of the rectangular column. One end of the L-shaped rod is slidably installed in the rectangular groove. The other end of the L-shaped rod is fixedly connected to an arc-shaped support platform. A limiting arc-shaped groove is opened on the upper surface of the arc-shaped support platform.

[0017] The beneficial effects of this invention are:

[0018] 1. Install the growth furnace on the base plate to ensure its overall stability during operation. Set the riser tube to be detachable and support it with the load-distribution component during use. The load-distribution component can also distribute the gravity of the opening and closing chamber door, ensuring the uniformity of the force distribution on the riser tube and the verticality of the single crystal silicon rod during the lifting process, thus ensuring its production quality.

[0019] 2. The set lifting and rotating component can detect the verticality of the lifting tube before the overall device is running, ensuring installation accuracy and avoiding the impact of installation errors on the monocrystalline silicon rod. At the same time, the lifting and rotating component is fixedly connected to the growth furnace, ensuring the overall consistency of the device. This ensures that the load on the monocrystalline silicon rod will not be concentrated in one direction during the lifting process, thus improving the production quality of the monocrystalline silicon rod. Attached Figure Description

[0020] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0021] Figure 1 This is a first three-dimensional structural schematic diagram of the present invention;

[0022] Figure 2 This is a schematic diagram of the second three-dimensional structure of the present invention;

[0023] Figure 3 This is a three-dimensional structural diagram of the inside of the growth furnace in this invention;

[0024] Figure 4 This is a partial three-dimensional structural schematic diagram of the lifting unit in this invention;

[0025] Figure 5This is a schematic diagram of the three-dimensional connection structure between the lifting tube, traction rope, rotary motor, limiting chassis and seed crystal chuck in this invention.

[0026] Figure 6 This is a three-dimensional connection structure diagram of the base plate, growth furnace, connecting pipe, lifting pipe and load distribution component in this invention;

[0027] Figure 7 This is a schematic diagram of the three-dimensional connection structure between the screw, lifting block, slide rod, slide cylinder, limiting rod and detection unit in this invention;

[0028] Figure 8 This is a three-dimensional structural diagram of the detection unit in this invention;

[0029] Figure 9 In this invention Figure 8 A magnified structural diagram at point A.

[0030] In the picture:

[0031] 1. Base plate;

[0032] 2. Growth furnace; 21. Reinforcing rib; 22. Electrode; 23. Heater; 24. Graphite bearing; 25. Graphite base; 26. Quartz crucible; 261. Graphite support column; 262. Graphite ring; 27. Insulation layer;

[0033] 3. Connecting pipe;

[0034] 4. Lifting pipe; 41. Semi-cylindrical chute; 42. Opening and closing chamber door;

[0035] 5. Lifting and rotating assembly;

[0036] 51. Lifting unit; 511. Horizontal plate; 512. Vertical pole; 513. Drive motor; 514. Drive gear; 515. Reduction gear; 516. Screw; 517. Lifting block; 518. Slide rod; 5181. Slide cylinder; 5182. Limiting rod; 519. Top plate;

[0037] 52. Redirecting wheel; 53. Bracket; 54. Pulley; 55. Traction rope; 56. Rotary motor; 57. Limiting chassis; 58. Seed crystal chuck;

[0038] 59. Detection unit; 591. Folded rod; 592. Arc-shaped clamp; 593. Piezoelectric contact switch; 594. Compression spring; 595. Detection lamp;

[0039] 6. Load-distributing component; 61. Rectangular column; 62. Positioning element; 63. Stress beam;

[0040] 64. Support unit; 641. Electric push rod; 642. L-shaped rod; 643. Arc-shaped support platform; 644. Limiting arc-shaped groove. Detailed Implementation

[0041] To make the technical means, creative features, objectives and effects of this invention easier to understand, the invention will be further described below in conjunction with specific embodiments.

[0042] Example 1:

[0043] See Figures 1 to 3 as well as Figure 5 A Czochralski single crystal growth apparatus includes a base plate 1, a growth furnace 2 fixedly disposed at the middle of the upper end of the base plate 1, a connecting pipe 3 installed at the upper end of the growth furnace 2, and a lifting pipe 4 fixedly connected to the upper end of the connecting pipe 3.

[0044] A reinforcing rib 21 is evenly arranged between the lower end of the outer wall of the growth furnace 2 and the bottom plate 1 along the circumferential direction of the growth furnace 2. An electrode 22 is installed at the bottom of the inner side of the growth furnace 2. A heater 23 is installed above the electrode 22. A graphite bearing 24 is installed near the lower end of the inner side of the heater 23. A graphite base 25 is set in the middle of the bottom of the growth furnace 2. A quartz crucible 26 is supported at the upper end of the graphite base 25. An insulation layer 27 is provided on the inner wall of the growth furnace 2.

[0045] The quartz crucible 26 has graphite support columns 261 evenly installed along its circumference at the upper edge of the crucible 26. The diameter of the graphite support columns 261 gradually decreases from top to bottom. Several coaxially arranged graphite rings 262 are fixedly installed at the upper end of the graphite support columns 261. The diameter of each graphite ring 262 gradually increases from the inner ring to the outer ring.

[0046] The inner wall of the lifting pipe 4 is uniformly provided with a semi-cylindrical groove 41 along its circumference, and the outer wall of the lifting pipe 4 is provided with a discharge port, and a door 42 for opening and closing is installed in the discharge port.

[0047] In practice, the monocrystalline silicon raw material is first added manually into the quartz crucible 26. Then, the riser tube 4 is fixedly installed on the upper end of the connecting tube 3 and the connection is sealed. Power is supplied to the electrode 22, which drives the heater 23 to heat to 1400℃-1500℃, thereby melting the monocrystalline silicon raw material in the quartz crucible 26. The growth furnace 2 is evacuated by external vacuum equipment and inert gas is introduced to maintain its internal pressure and stabilize the surface of the molten silicon raw material. The temperature gradient of the liquid surface promotes the convection of the thermocapillary phenomenon due to the difference in surface tension.

[0048] Example 2:

[0049] The technical solution is basically the same as that in Embodiment 1, see below. Figures 1 to 4 as well as Figures 7 to 9 The difference is that the growth furnace 2 is provided with a lifting and rotating assembly 5 on its side, and the lower end of the lifting and rotating assembly 5 is fixedly connected to the base plate 1.

[0050] The lifting and rotating assembly 5 includes a lifting unit 51. The lifting unit 51 is fixedly installed on the side of the lifting tube 4. A deflector wheel 52 is installed on the upper end of the lifting unit 51. A bracket 53 is fixedly installed on the upper side of the lifting unit 51. A pulley 54 is rotatably installed on the inner side of the bracket 53 away from the deflector wheel 52. A traction rope 55 is fixedly bolted to the lifting unit 51. The other end of the traction rope 55 passes over the deflector wheel 52 and the pulley 54 and is fixedly bolted to a rotary motor 56. The rotary motor 56 is installed on a limiting chassis 57. The limiting chassis 57 and the semi-cylindrical slide groove 41 are slidably engaged. The output shaft of the rotary motor 56 extends to the lower part of the limiting chassis 57 and is fixedly connected to a seed crystal chuck 58. A detection unit 59 is fixedly connected to the side of the lifting unit 51. The detection unit 59 is attached to the side wall of the lifting tube 4.

[0051] The lifting unit 51 includes a horizontal plate 511. The horizontal plate 511 is fixedly connected to the side wall of the growth furnace 2. A vertical rod 512 is fixedly installed at the corner of the horizontal plate 511 away from the growth furnace 2. The lower end of the vertical rod 512 is fixedly connected to the base plate 1. A drive motor 513 is installed on the lower end face of the horizontal plate 511. The output shaft of the drive motor 513 extends to the top of the horizontal plate 511 and is fixedly installed with a drive gear 514. A reduction gear 515 meshes with the side of the drive gear 514. The reduction gear 515 is installed at the lower end of the screw 516. A top plate 519 is provided at the upper end of the screw 516. The top plate 519 and the horizontal plate 511 are fixedly connected by a slide rod 518. A lifting block 517 is screwed onto the screw 516.

[0052] The slide bar 518 is fitted with a slide cylinder 5181 at the position corresponding to the lifting block 517, and a limit rod 5182 is fixedly installed between the slide cylinder 5181 and the lifting block 517.

[0053] The detection unit 59 includes a folded rod 591. The folded rod 591 is fixedly connected to the side wall of the lifting block 517. An arc-shaped hoop 592 is fixedly connected to the upper end of the folded rod 591. An installation groove is evenly opened along the arc direction in the concave arc surface of the arc-shaped hoop 592. A piezoelectric contact switch 593 is slidably installed in the installation groove through a compression spring 594. A detection light 595 is set at the upper end of the arc-shaped hoop 592 corresponding to the position of the installation groove. The piezoelectric contact switch 593 is connected to the detection light 595 through an electrical signal. In the initial position, the piezoelectric contact switch 593 is in contact with the side wall of the lifting tube 4 but does not generate a compressive force.

[0054] In practice, after the lifting tube 4 is fixedly installed on the upper end of the connecting tube 3, the opening and closing chamber door 42 is opened manually, and the seed crystal is installed on the lower end of the seed crystal chuck 58. Then, the opening and closing chamber door 42 is closed, and the drive motor 513 is started. The drive motor 513 drives the drive gear 514 to reciprocate. Under the meshing of the reduction gear 515, the screw 516 will reciprocate synchronously. Due to the presence of the limit rod 5182 and the slide cylinder 5181, the lifting block 517 will move up and down along the screw 516. At this time, the lifting block 517 will drive the folding rod 591 and the arc-shaped hoop 5 92 reciprocates up and down. During the reciprocating motion of the arc-shaped hoop 592, it can drive the piezoelectric contact switch 593 to reciprocate up and down along the lifting tube 4. If the lifting tube 4 is installed at an angle relative to the installation position of the connecting tube 3, the lifting tube 4 will exert a certain pressure on the piezoelectric contact switch 593, thereby opening its internal switch. At this time, the detection light 595 will light up. When the detection light 595 is manually monitored to be in the lit state, the installation verticality of the lifting tube 4 should be adjusted in time until the detection light 595 is in the normally closed state during the reciprocating motion.

[0055] Once the temperature of the monocrystalline silicon melt in the quartz crucible 26 stabilizes, the drive motor 513 drives the rotary motor 56, the limiting base 57, the seed crystal chuck 58, and the seed crystal to slowly descend into the monocrystalline silicon melt. Then, the rotary motor 56 is started, which drives the seed crystal chuck 58 and the seed crystal to rotate at a speed of 10-14 rpm. At the same time, the drive motor 513 drives them to rise at a certain speed. At this time, the monocrystalline silicon melt will adhere to the surface of the seed crystal and form a new crystal rod during the lifting process. When the diameter of the crystal rod reaches the process requirements, the lifting speed is gradually increased so that the crystal rod growth enters the constant diameter growth stage and is maintained within a certain diameter control tolerance range. When the length of the crystal rod reaches the predetermined requirements, the diameter of the crystal rod is gradually reduced until it is reduced to a point that leaves the surface of the monocrystalline silicon melt, completing the process.

[0056] During the crystal rod lifting process, the graphite support pillars 261, which are smaller at the bottom and larger at the top, enable the surrounding environment of the crystal rod to form an axial temperature gradient in the numerical direction after it leaves the surface of the monocrystalline silicon molten liquid. Meanwhile, the graphite rings 262 can absorb impurity particles in the monocrystalline silicon raw material atmosphere, reducing defects caused by carbon inclusions during the crystal rod growth process. At the same time, since the ring diameter of each graphite ring 262 gradually increases from the inner ring to the outer ring, a small radial temperature gradient is formed in the radial direction of the crystal rod. This, combined with the axial temperature gradient, helps to improve the growth quality of the crystal rod.

[0057] Example 3:

[0058] The technical solution is basically the same as that in Embodiment 1, see below. Figure 1 , Figure 2 , Figure 5 as well as Figure 6 The difference is that the side wall of the lifting pipe 4 is fixedly connected to a load-distributing component 6, and the lower end of the load-distributing component 6 is fixedly connected to the base plate 1.

[0059] The load distribution component 6 includes a rectangular column 61. The rectangular column 61 is fixedly connected to the side of the growth furnace 2 and located on the upper surface of the bottom plate 1. The rectangular column 61 has a hollow structure inside. Several positioning parts 62 are fixedly installed on the outer wall of the rectangular column 61. Stress beams 63 are fixedly connected to the side walls of the positioning parts 62. The end of the stress beams 63 away from the positioning parts 62 is fixedly connected to the side wall of the lifting pipe 4. A support unit 64 that cooperates with the opening and closing chamber door 42 is fixedly installed on the side wall of the rectangular column 61 near the lower end.

[0060] The support unit 64 includes an electric push rod 641. The electric push rod 641 is fixedly installed on the side wall of the rectangular column 61 near the lower end. An L-shaped rod 642 is fixedly connected to the upper end of the electric push rod 641. A rectangular groove is provided on the side wall of the rectangular column 61. One end of the L-shaped rod 642 is slidably installed in the rectangular groove. The other end of the L-shaped rod 642 is fixedly connected to an arc-shaped support platform 643. A limiting arc-shaped groove 644 is provided on the upper surface of the arc-shaped support platform 643.

[0061] In specific operation, during the normal operation of the growth furnace 2, the rectangular column 61, the positioning component 62, and the stress beam 63 provide certain support for the lifting tube 4, ensuring uniform stress inside the lifting tube 4 during the crystal growth process and guaranteeing the growth quality of the crystal. In addition, each time the opening and closing chamber door 42 is opened, the electric push rod 641 will drive the L-shaped rod 642 and the arc-shaped support platform 643 to move upward, and then the limiting arc groove 644 will provide certain support for the opening and closing chamber door 42, ensuring uniform load distribution and further guaranteeing the production quality of the crystal.

[0062] The working principle of this invention during use:

[0063] First, the monocrystalline silicon raw material is manually added into the quartz crucible 26. Then, the riser tube 4 is fixedly installed on the upper end of the connecting tube 3 and the connection is sealed. Power is supplied to the electrode 22, which drives the heater 23 to heat to 1400℃-1500℃, thereby melting the monocrystalline silicon raw material in the quartz crucible 26. The growth furnace 2 is evacuated by external vacuum equipment and inert gas is introduced to maintain its internal pressure and stabilize the surface of the molten silicon raw material. The temperature gradient of the liquid surface promotes the convection of the thermal capillary phenomenon due to the surface tension difference.

[0064] 2. After the lifting tube 4 is fixedly installed on the upper end of the connecting tube 3, the opening and closing chamber door 42 is opened manually, and the seed crystal is installed on the lower end of the seed crystal chuck 58. Then the opening and closing chamber door 42 is closed, and the drive motor 513 is started. The drive motor 513 drives the drive gear 514 to reciprocate. Under the meshing of the reduction gear 515, the screw 516 will reciprocate synchronously. Due to the presence of the limit rod 5182 and the slide cylinder 5181, the lifting block 517 will move up and down along the screw 516. At this time, the lifting block 517 will drive the folding rod 591 and the arc-shaped clamp 592. The arc-shaped hoop 592 moves up and down, and during this up and down reciprocating motion, it can drive the piezoelectric contact switch 593 to move up and down along the lifting tube 4. If the lifting tube 4 is installed at an angle relative to the installation position of the connecting tube 3, the lifting tube 4 will exert a certain pressure on the piezoelectric contact switch 593, thereby opening its internal switch. At this time, the detection light 595 will light up. When the detection light 595 is manually monitored to be in the lit state, the installation verticality of the lifting tube 4 should be adjusted in time until the detection light 595 is in the normally closed state during the up and down reciprocating motion.

[0065] 3. After the temperature of the monocrystalline silicon melt in the quartz crucible 26 stabilizes, the drive motor 513 drives the rotary motor 56, the limiting base 57, the seed crystal chuck 58, and the seed crystal to slowly descend into the monocrystalline silicon melt. Then, the rotary motor 56 is started, which drives the seed crystal chuck 58 and the seed crystal to rotate at a speed of 10-14 rpm. At the same time, the drive motor 513 drives them to rise at a certain speed. At this time, the monocrystalline silicon melt will adhere to the surface of the seed crystal and form a new crystal rod during the lifting process. When the diameter of the crystal rod reaches the process requirements, the lifting speed is gradually increased so that the crystal rod growth enters the constant diameter growth stage and is kept within a certain diameter control tolerance range. When the length of the crystal rod reaches the predetermined requirements, the diameter of the crystal rod is gradually reduced until it is reduced to a point that leaves the surface of the monocrystalline silicon melt, completing the finishing process.

[0066] Fourth: During the crystal rod lifting process, the graphite support column 261, which is smaller at the bottom and larger at the top, can create an axial temperature gradient in the surrounding environment after the crystal rod leaves the surface of the monocrystalline silicon molten liquid. The graphite ring 262 can absorb impurity particles in the monocrystalline silicon raw material atmosphere, reducing the defects of carbon inclusions during the crystal rod growth process. At the same time, since the ring diameter of each graphite ring 262 gradually increases from the inner ring to the outer ring, a small radial temperature gradient will be formed in the radial direction of the crystal rod. This, combined with the axial temperature gradient, is beneficial to improving the growth quality of the crystal rod.

[0067] Fifth: During the normal operation of the growth furnace 2, the rectangular column 61, the positioning component 62, and the stress beam 63 can provide a certain support for the lifting tube 4, ensuring uniform stress inside the lifting tube 4 during the crystal growth process and guaranteeing the growth quality of the crystal. In addition, after each opening and closing of the chamber door 42, the electric push rod 641 will drive the L-shaped rod 642 and the arc-shaped support platform 643 to move upward, and then provide a certain support for the opening and closing of the chamber door 42 through the limiting arc groove 644, ensuring uniform load distribution and further guaranteeing the production quality of the crystal.

[0068] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of protection claimed by the present invention. The scope of protection of the present invention is defined by the appended claims and their equivalents.

Claims

1. A Czochralski single crystal growth apparatus, comprising a base plate (1), a growth furnace (2) fixedly disposed at the middle of the upper end of the base plate (1), a connecting pipe (3) installed at the upper end of the growth furnace (2), and a lifting pipe (4) fixedly connected to the upper end of the connecting pipe (3), characterized in that: The growth furnace (2) is provided with a lifting and rotating assembly (5) on its side. The lower end of the lifting and rotating assembly (5) is fixedly connected to the bottom plate (1). The side wall of the lifting pipe (4) is fixedly connected with a load dispersing assembly (6). The lower end of the load dispersing assembly (6) is fixedly connected to the bottom plate (1). The inner wall of the lifting pipe (4) is uniformly provided with a semi-cylindrical groove (41) along its circumference, and the outer wall of the lifting pipe (4) is provided with a discharge port, and a door (42) for opening and closing is installed in the discharge port. The lifting and rotating assembly (5) includes a lifting unit (51). The lifting unit (51) is fixedly installed on the side of the lifting tube (4). The lifting unit (51) is fixedly connected to the side of the lifting unit (51). The detection unit (59) is attached to the side wall of the lifting tube (4). The detection unit (59) includes a folded rod (591). An arc-shaped hoop (592) is fixedly connected to the upper end of the folded rod (591). An installation groove is evenly opened along its arc direction in the concave arc surface of the arc-shaped hoop (592). A piezoelectric contact switch (593) is slidably installed in the installation groove through a compression spring (594). A detection lamp (595) is set at the upper end of the arc-shaped hoop (592) corresponding to the position of the installation groove. The piezoelectric contact switch (593) is connected to the detection lamp (595) through an electrical signal. When the piezoelectric contact switch (593) is in the initial position, it is in contact with the side wall of the lifting tube (4) but does not generate a squeezing force. The load distribution component (6) includes a rectangular column (61). The rectangular column (61) is fixedly connected to the side of the growth furnace (2) and located on the upper surface of the bottom plate (1). The rectangular column (61) has a hollow structure inside. Several positioning parts (62) are fixedly installed on the outer wall of the rectangular column (61). Stress beams (63) are fixedly connected to the side walls of the positioning parts (62). The end of the stress beam (63) away from the positioning parts (62) is fixedly connected to the side wall of the lifting pipe (4). A support unit (64) that cooperates with the opening and closing chamber door (42) is fixedly installed on the side wall of the rectangular column (61) near the lower end. The support unit (64) includes an electric push rod (641). The electric push rod (641) is fixedly installed on the side wall of the rectangular column (61) near the lower end. An L-shaped rod (642) is fixedly connected to the upper end of the electric push rod (641). A rectangular groove is provided on the side wall of the rectangular column (61). One end of the L-shaped rod (642) is slidably installed in the rectangular groove. The other end of the L-shaped rod (642) is fixedly connected to an arc-shaped support platform (643). A limiting arc-shaped groove (644) is provided on the upper surface of the arc-shaped support platform (643). A graphite base (25) is provided in the middle of the bottom of the growth furnace (2). A quartz crucible (26) is supported on the upper end of the graphite base (25). Graphite support columns (261) are evenly installed along the circumference of the upper edge of the quartz crucible (26). The diameter of the graphite support column (261) gradually decreases from top to bottom. Several coaxial graphite rings (262) are fixedly installed on the upper end of the graphite support column (261).

2. The Czochralski single crystal growth apparatus according to claim 1, characterized in that: Reinforcing ribs (21) are uniformly arranged between the lower end of the outer wall of the growth furnace (2) and the bottom plate (1) along the circumferential direction of the growth furnace (2).

3. The Czochralski single crystal growth apparatus according to claim 1, characterized in that: The growth furnace (2) has an inner bottom electrode (22), a heater (23) is installed above the electrode (22), a graphite bearing (24) is installed on the inner side of the heater (23) near the lower end, and an insulation layer (27) is provided on the inner wall of the growth furnace (2).

4. The Czochralski single crystal growth apparatus according to claim 3, characterized in that: The diameter of each of the graphite rings (262) gradually increases from the inner ring to the outer ring.

5. The Czochralski single crystal growth apparatus according to claim 1, characterized in that: The lifting unit (51) is equipped with a deflector wheel (52) at its upper end. A bracket (53) is fixedly installed on the upper side of the lifting unit (51). A pulley (54) is rotatably installed on the inner side of the bracket (53) away from the deflector wheel (52). A traction rope (55) is fixedly bolted to the lifting unit (51). The other end of the traction rope (55) passes over the deflector wheel (52) and the pulley (54) and is fixedly bolted to a rotary motor (56). The rotary motor (56) is installed on the limiting chassis (57). The limiting chassis (57) and the semi-cylindrical slide groove (41) are slidably engaged. The output shaft of the rotary motor (56) extends to the bottom of the limiting chassis (57) and is fixedly connected to a seed crystal chuck (58).

6. The Czochralski single crystal growth apparatus according to claim 5, characterized in that: The lifting unit (51) includes a horizontal plate (511). The horizontal plate (511) is fixedly connected to the side wall of the growth furnace (2). A vertical rod (512) is fixedly installed at the corner of the end of the horizontal plate (511) away from the growth furnace (2). The lower end of the vertical rod (512) is fixedly connected to the bottom plate (1). A drive motor (513) is installed on the lower end face of the horizontal plate (511). The output shaft of the drive motor (513) extends to the top of the horizontal plate (511) and a drive gear (514) is fixedly installed. A reduction gear (515) meshes with the side of the drive gear (514). The reduction gear (515) is installed at the lower end of the screw (516). A top plate (519) is provided at the upper end of the screw (516). The top plate (519) and the horizontal plate (511) are fixedly connected by a slide rod (518). A lifting block (517) is screwed onto the screw (516).

7. The Czochralski single crystal growth apparatus according to claim 6, characterized in that: The slide bar (518) is fitted with a slide cylinder (5181) at the position corresponding to the lifting block (517), and a limit rod (5182) is fixedly installed between the slide cylinder (5181) and the lifting block (517).

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