Defect observation method and device, storage medium and observation instrument
By using a camera in semiconductor manufacturing to capture reference and defect images and performing mobile shooting based on both, the problem of low accuracy of defect positions in the prior art is solved, and the proportion of defects in the image and observation efficiency are improved.
Patent Information
- Application Number
- CN202311513534.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-11-13
- Publication Date
- 2025-05-13
AI Technical Summary
In the prior art, the defect position accuracy provided by the defect detector is not high, resulting in a relatively large shooting range of the camera, and the defects account for a small proportion of the captured images, which is not conducive to observation of defects.
By controlling the camera to take a reference image of the reference wafer at the first shooting position, and the defect-containing defect image of the defect-containing wafer is captured at the second shooting position, the camera is moved and the observed image containing the defect is captured so that the defect occupies a larger area in the observed image than in the defect-containing image.
This improves the proportion of defects in the image, enhances observation efficiency, shortens the path of camera movement, and saves movement time.
Smart Images
Figure CN119985482A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the field of semiconductor manufacturing technology, and in particular, to a defect observation method, device, storage medium and observation instrument. Background Art
[0002] In the development of modern science and technology, semiconductors have become an indispensable component, and semiconductor materials are widely used in various high-precision equipment. In the manufacture of semiconductor devices, different process factors, such as defects caused by incomplete processes, defects caused by dust particles, defects caused by mechanical damage, and defects caused by liquid residues, will cause different defects on the wafer. These semiconductor process defects will damage the final semiconductor devices, so it is necessary to detect and observe defects to identify specific defect types and improve the process technology.
[0003] In the related art, the camera is controlled to photograph the defect through the defect position provided by the defect detector to obtain an image containing the defect. However, since the accuracy of the defect position provided by the defect detector is not high, in this case, in order to ensure that the defect is definitely in the captured image, the camera's shooting range needs to be relatively large. Then the proportion of the defect in the captured image is small, which is not conducive to observing the defect. Summary of the invention
[0004] In order to overcome the problems existing in the related art, the present disclosure provides a defect observation method, device, storage medium and observation instrument.
[0005] According to a first aspect of an embodiment of the present disclosure, a defect observation method is provided, the defect observation method comprising:
[0006] Controlling the camera to capture a reference image of the reference wafer at a first capturing position;
[0007] The camera is controlled to capture a defect image containing a defect of the defective wafer at a second shooting position, and the camera is controlled to move and capture an observation image containing the defect according to the reference image and the defect image, wherein the relative position of the first shooting position and the reference wafer is equal to the relative position of the second shooting position and the defective wafer, and the area occupied by the defect in the observation image is greater than the area occupied by the defect in the defect image.
[0008] Optionally, the number of defects is multiple, and the defect observation method further includes:
[0009] Obtaining a first defect position corresponding to each defect, wherein the first defect position includes a wafer to which the defect belongs and a relative position of the defect on the wafer to which the defect belongs;
[0010] Determine a first photographing position and a second photographing position corresponding to each defect according to a first defect position corresponding to each defect;
[0011] For each defect, the camera is controlled to capture a defect image of the defective wafer containing the defect at a second shooting position, and the camera is controlled to move and capture an observation image containing the defect according to the reference image and the defect image until observation images of all defects are obtained.
[0012] Optionally, controlling the camera to move and capture an observation image containing the defect according to the reference image and the defect image includes:
[0013] Determining a position of the defect in the defect image according to the reference image and the defect image;
[0014] According to the position of the defect in the defect image, the camera is controlled to move and capture an observation image containing the defect.
[0015] Optionally, determining a position of the defect in the defect image according to the reference image and the defect image includes:
[0016] Obtaining a pixel difference value according to a pixel value of the reference image and a pixel value of the defective image;
[0017] The position of the defect in the defect image is determined according to the pixel difference and a preset pixel threshold.
[0018] Optionally, controlling the camera to move and capture an observation image containing the defect according to the position of the defect in the defect image includes:
[0019] Obtaining a second defect position corresponding to the defect according to the position of the defect in the defect image and a transformation relationship between a preset image coordinate system and a world coordinate system;
[0020] Determining a third shooting position corresponding to the defect according to a second defect position corresponding to the defect;
[0021] The camera is controlled to move to the third shooting position and shoot an observation image containing the defect.
[0022] Optionally, the reference wafer is a wafer without defects.
[0023] Optionally, controlling a camera to capture an observation image containing the defect includes:
[0024] The shooting parameters of the camera are adjusted, and an observation image containing the defect is shot, wherein the shooting parameters include frame, field of view and pixel.
[0025] According to a second aspect of an embodiment of the present disclosure, a defect observation device is provided, the defect observation device comprising:
[0026] A first processing module is configured to control the camera to capture a reference image of a reference wafer at a first capturing position;
[0027] The second processing module is configured to control the camera to capture a defect image containing a defect of the defective wafer at a second shooting position, and control the camera to move and capture an observation image containing the defect based on the reference image and the defect image, wherein the relative position of the first shooting position and the reference wafer is equal to the relative position of the second shooting position and the defective wafer, and the area occupied by the defect in the observation image is greater than the area occupied by the defect in the defect image.
[0028] According to a third aspect of an embodiment of the present disclosure, a non-temporary computer-readable storage medium is provided, on which a computer program is stored, and when the program is executed by a processor, the steps of any defect observation method provided in the first aspect of the present disclosure are implemented.
[0029] According to a fourth aspect of an embodiment of the present disclosure, there is provided a viewing instrument, comprising:
[0030] Camera;
[0031] a memory having a computer program stored thereon;
[0032] A processor is used to execute the computer program in the memory to implement any one of the defect observation method steps provided in the first aspect of the present disclosure.
[0033] Through the above technical solution, the camera is first controlled to capture a reference image of a reference wafer at a first shooting position; then the camera is controlled to capture a defect image of a defective wafer containing defects at a second shooting position, and the camera is controlled to move and capture an observation image containing defects according to the reference image and the defect image, wherein the relative position of the first shooting position and the reference wafer is equal to the relative position of the second shooting position and the defective wafer, and the area occupied by the defect in the observation image is greater than the area occupied by the defect in the defect image. By comparing the reference image and the defect image, a more accurate shooting position can be determined and the camera can be controlled to move to the shooting position for shooting, so as to obtain a clear observation image with a larger defect ratio. In addition, the camera first captures a reference image at the first shooting position, then moves to the second shooting position to capture a reference image, and then moves to a precise shooting position to capture an observation image, so that the path of camera movement is shortened, movement time is saved, and observation efficiency is improved.
[0034] Other features and advantages of the present disclosure will be described in detail in the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS
[0035] The accompanying drawings are used to provide a further understanding of the present disclosure and constitute a part of the specification. Together with the following specific embodiments, they are used to explain the present disclosure but do not constitute a limitation of the present disclosure. In the accompanying drawings:
[0036] Figure 1 It is a schematic diagram showing a defect observation process according to an exemplary embodiment.
[0037] Figure 2 The figure is a flow chart of a defect observation method according to an exemplary embodiment.
[0038] Figure 3 is a flow chart showing another defect observation method according to an exemplary embodiment.
[0039] Figure 4 It is a schematic diagram of another defect observation process according to an exemplary embodiment.
[0040] Figure 5 The present invention is a flowchart of sub-steps for controlling the movement of a camera and capturing an observation image containing defects according to a reference image and a defect image according to an exemplary embodiment.
[0041] Figure 6 According to an exemplary embodiment, Figure 5 Flow chart of sub-steps of step S21.
[0042] Figure 7 According to an exemplary embodiment, Figure 5 Flow chart of sub-steps of step S22.
[0043] Figure 8 The figure is a block diagram of a defect observation device according to an exemplary embodiment.
[0044] Fig. 9 is a block diagram of a visualization instrument according to an exemplary embodiment. DETAILED DESCRIPTION
[0045] The specific implementation of the present disclosure is described in detail below in conjunction with the accompanying drawings. It should be understood that the specific implementation described herein is only used to illustrate and explain the present disclosure, and is not used to limit the present disclosure.
[0046] It should be noted that the concepts such as "first" and "second" mentioned in the present disclosure are only used to distinguish different devices, modules or units, and are not used to limit the order or interdependence of the functions performed by these devices, modules or units.
[0047] Before introducing the specific implementation methods of the present disclosure, first of all, the application scenarios of the present disclosure are explained. In the development of modern science and technology, semiconductors have become an indispensable component, and semiconductor materials are widely used in various high-precision equipment. In the manufacture of semiconductor devices, different defects will be caused on the wafer due to different process factors, such as defects caused by incomplete processes, defects caused by dust particles, defects caused by mechanical damage, and defects caused by liquid residues. These semiconductor process defects will cause damage to the final semiconductor devices, so it is necessary to detect and observe defects to identify specific defect types and improve the process technology.
[0048] In the related art, the camera is controlled to photograph the defect through the defect position provided by the defect detector to obtain an image containing the defect. However, since the accuracy of the defect position provided by the defect detector is not high, in this case, in order to ensure that the defect is definitely in the captured image, the camera's shooting range needs to be relatively large. Then the proportion of the defect in the captured image is small, which is not conducive to observing the defect.
[0049] See also Figure 1 For the first defect D1, the camera is first controlled to capture the defect image (A-1) containing the first defect D1, and then the camera is controlled to move to the corresponding position of the reference wafer to capture the reference image (B-1). By comparing the defect image (A-1) and the reference image (B-1), a comparison image (C-1) is obtained. The comparison image can determine the specific position of the defect in the defect image, and according to the specific position of the defect in the image, a new shooting position is obtained, and the camera is moved to the new shooting position to capture the observation image (D-1). The way to obtain the observation image of the second defect D2, the third defect D3, ... the Nth defect DN is the same as the first defect D1, and will not be repeated here.
[0050] The inventors found that the observation efficiency depends on the mobility of the machine carrier. In the process of moving the camera from the position of shooting defect images to the position of shooting reference images and then to the position of shooting observation images, the camera needs to move back and forth between shooting reference wafers and defective wafers, which is very time-consuming. Both the defect image and the observation image are shot around the defects in the defective wafer, and the position of shooting the defect image is very close to the position of shooting the observation image. If the camera is moved directly from the position of shooting the defect image to the position of shooting the observation image, the moving distance of the camera is short, which can save the time of camera movement.
[0051] In order to solve the above problems, the camera is first controlled to capture a reference image of a reference wafer at a first shooting position; then the camera is controlled to capture a defect image of a defective wafer containing defects at a second shooting position. According to the reference image and the defect image, the camera is controlled to move and capture an observation image containing defects, wherein the relative position of the first shooting position and the reference wafer is equal to the relative position of the second shooting position and the defective wafer, and the area occupied by the defect in the observation image is greater than the area of the defect in the defect image. By comparing the reference image and the defect image, a more accurate shooting position can be determined and the camera can be controlled to move to the shooting position for shooting, thereby obtaining a clear observation image with a larger defect ratio. Moreover, the camera moves directly from the second shooting position to the precise shooting position to capture the observation image, thereby shortening the path of the camera movement, saving movement time, and improving observation efficiency.
[0052] Figure 2 is a flow chart of a defect observation method according to an exemplary embodiment. Figure 2 As shown, the defect observation method can be applied to an observation instrument, and the defect observation method can include step S1 and step S2:
[0053] Step S1, controlling a camera to capture a reference image of a reference wafer at a first capturing position.
[0054] Step S2, controlling the camera to capture a defect image containing defects of the defective wafer at a second capturing position, and controlling the camera to move and capture an observation image containing defects based on the reference image and the defect image.
[0055] The relative position between the first shooting position and the reference wafer is equal to the relative position between the second shooting position and the defective wafer, and the area occupied by the defect in the observed image is greater than the area occupied by the defect in the defect image.
[0056] The second photographing position may be a photographing position corresponding to a defect on the defective wafer.
[0057] The relative position between the first shooting position and the reference wafer is equal to the relative position between the second shooting position and the defective wafer. The first shooting position can be determined by the relative position between the second shooting position and the defective wafer and the position of the reference wafer.
[0058] The defect image may be an image including a defect photographed at the second photographing position.
[0059] The reference image may be an image captured at a first capturing position and not containing defects.
[0060] The observed image may be an image containing defects that is captured after the camera moves from the second capturing position.
[0061] The area occupied by the defect in the observed image is greater than the area occupied by the defect in the defect image, and the proportion of the defect in the observed image is greater than the proportion in the defect image.
[0062] The camera is controlled to move to the second shooting position corresponding to the defect to shoot, and a defect image corresponding to the defect is obtained. According to the reference image and the defect image corresponding to the defect, a new shooting position is obtained, and the camera is moved from the second shooting position to the new shooting position to shoot. Since the new shooting position is more accurate than the second shooting position, the defect can be enlarged or photographed in close-up to obtain an observation image of the defect.
[0063] Furthermore, the new photographing position may be closer to the defective wafer than the second photographing position.
[0064] By comparing the reference image and the defect image, a more accurate shooting position can be determined and the camera can be controlled to move to the shooting position for shooting, so as to obtain a clear observation image with a larger defect ratio. In addition, the camera first shoots the reference image at the first shooting position, then moves to the second shooting position to shoot the reference image, and then moves to the precise shooting position to shoot the observation image, which shortens the camera movement path, saves movement time, and improves observation efficiency.
[0065] In a possible implementation manner, when there are multiple defects, different defects may be distributed on different defective wafers, and each defect on each defective wafer needs to be observed. Figure 3 FIG. 1 is a flow chart of another defect observation method according to an exemplary embodiment. Figure 3 As shown, the defect observation method may further include steps S201 to S204:
[0066] Step S201, obtaining a first defect position corresponding to each defect.
[0067] The first defect position may be the position of a defect detected by a defect detector. Specifically, the first defect position may include a wafer to which the defect belongs and a relative position of the defect on the wafer to which the defect belongs.
[0068] Illustratively, the first defect (D1) is on wafer 5, and the relative position on wafer 5 is (3, 4).
[0069] Step S202: determining a first photographing position and a second photographing position corresponding to each defect according to a first defect position corresponding to each defect.
[0070] According to the relative position of the defect in the first defect position corresponding to each defect on the corresponding wafer, the first shooting position corresponding to the defect is determined.
[0071] It can be understood that the first photographing position is a photographing position that can capture the relative position on the reference wafer.
[0072] According to the first defect position corresponding to each defect, a second shooting position corresponding to the defect is determined.
[0073] It can be understood that the second shooting position is a shooting position that can capture an image containing the first defect position.
[0074] For example, the relative position of the defect on the wafer 5 is (3, 4), then the first shooting position is the shooting position that can capture the relative position (3, 4) on the reference wafer. The second shooting position is the shooting position that can capture the relative position (3, 4) on the wafer 5 to which the defect belongs.
[0075] It should be understood that each wafer position and its corresponding shooting position can be calibrated in advance, and for each wafer position, there will be a shooting position corresponding to the wafer position. For example, the shooting position can be taken as the shooting center with its corresponding wafer position.
[0076] Step S203 , controlling the camera to capture a reference image of the reference wafer at a first capturing position corresponding to each defect.
[0077] The camera is controlled to move to the first shooting position corresponding to each defect in turn to shoot, and a reference image corresponding to each defect is obtained.
[0078] Step S204, for each defect, execute controlling the camera to capture a defect image of the defective wafer containing the defect at a second capturing position, and according to the reference image and the defect image, control the camera to move and capture an observation image containing the defect until the observation images of all defects are obtained.
[0079] The relative position between the first shooting position and the reference wafer is equal to the relative position between the second shooting position and the defective wafer, and the area occupied by the defect in the observed image is greater than the area of the defect in the defect image.
[0080] Figure 4 FIG. 1 is a schematic diagram of another defect observation process according to an exemplary embodiment. Figure 4 As shown, the camera is first controlled to move to the first shooting position corresponding to each defect in turn to shoot, so as to obtain a reference image corresponding to each defect.
[0081] That is, the camera is controlled to shoot at the first shooting position corresponding to the first defect D1 to obtain a reference image (A-2) corresponding to the first defect D1, and then the camera is controlled to move from the first shooting position corresponding to the first defect D1 to the first shooting position corresponding to the second defect D2 to shoot, and then the camera is controlled to move from the first shooting position corresponding to the second defect D2 to the first shooting position corresponding to the third defect D3 to shoot, and then the reference image corresponding to the third defect D3 is obtained, and in this way, the reference image corresponding to the Nth defect DN is obtained.
[0082] The camera is controlled to move to the second shooting position corresponding to the defect to shoot, and the defect image corresponding to the defect is obtained. According to the reference image and the defect image corresponding to the defect, a new shooting position is obtained, and the camera is moved from the second shooting position to the new shooting position to shoot, and the observation image of the defect is obtained. For each defect, the above operation is performed repeatedly until the observation images corresponding to all defects are obtained.
[0083] For example, for the first defect D1, the camera is moved to the second shooting position corresponding to the first defect D1 to shoot, and a defect image (B-2) corresponding to the first defect D1 is obtained. Based on the reference image (A-2) and the defect image (B-2) corresponding to the first defect D1, a new shooting position corresponding to the first defect D1 is obtained, and the camera is moved from the second shooting position corresponding to the first defect D1 to the new shooting position corresponding to the first defect D1 to shoot, and an observation image (D-2) corresponding to the first defect D1 is obtained.
[0084] For the second defect D2, the camera is moved to the second shooting position corresponding to the second defect D2 to shoot, and a defect image corresponding to the second defect D2 is obtained. Based on the reference image and the defect image corresponding to the second defect D2, a new shooting position corresponding to the second defect D2 is obtained, and the camera is moved from the second shooting position corresponding to the second defect D2 to the new shooting position corresponding to the second defect D2 to shoot, and an observation image corresponding to the second defect D2 is obtained.
[0085] For the third defect D3, the camera is moved to the second shooting position corresponding to the third defect D3 to shoot, and a defect image corresponding to the third defect D3 is obtained. Based on the reference image and the defect image corresponding to the third defect D3, a new shooting position corresponding to the third defect D3 is obtained, and the camera is moved from the second shooting position corresponding to the third defect D3 to the new shooting position corresponding to the third defect D3 to shoot, and an observation image corresponding to the third defect D3 is obtained.
[0086] For each defect, the above operation is performed repeatedly until the observation images corresponding to all defects are obtained.
[0087] In one possible implementation, see Figure 5 In step S2, according to the reference image and the defect image, the camera is controlled to move and shoot an observation image containing defects, which may include steps S21 and S22:
[0088] Step S21, determining the position of the defect in the defect image according to the reference image and the defect image.
[0089] The relative positions of the reference image and the defect image are the same. The reference image is an image without defects, and the defect image is an image containing defects. By comparing the reference image and the defect image, the position of the defect in the defect image can be determined.
[0090] Step S22, according to the position of the defect in the defect image, control the camera to move and capture the observation image containing the defect.
[0091] The position of the defect in the defect image is converted into the position of the defect on the defect wafer, and according to the position of the defect on the defect wafer, a new shooting position for shooting the defect is obtained, and the camera is controlled to move to the shooting position for shooting to obtain an observation image.
[0092] It should be understood that the accuracy of the defect position on the defective wafer determined based on the position of the defect in the defect image is higher than the accuracy of the defect position obtained directly from the defect detector. Therefore, based on the more accurate defect position, the new shooting position can also be closer to the defect on the defective wafer, making the captured observation image clearer, the defect ratio is larger, and the observation efficiency is improved.
[0093] In one possible implementation, see Figure 6 , step S21 may include step S211 and step S212:
[0094] Step S211, obtaining pixel difference values according to the pixel values of the reference image and the pixel values of the defective image.
[0095] Subtract the pixel values at the corresponding positions of the reference image and the defect image to obtain the pixel difference between the reference image and the defect image. The pixel difference can be shown in the form of an image, for example Figure 1 C-1 or Figure 4 C-2 in.
[0096] Step S212, determining the position of the defect in the defect image according to the pixel difference and the preset pixel threshold.
[0097] When the pixel difference is greater than a preset pixel threshold, it can be considered that there is a defect at that location, and the location of the pixel is the location of the defect in the defect image.
[0098] Furthermore, in order to improve the accuracy of judgment and avoid misjudgment, on this basis, the number of consecutive pixel points whose pixel difference is greater than the preset pixel threshold can also be determined. When the number of consecutive pixel points whose pixel difference is greater than the preset pixel threshold exceeds the preset number threshold, it is considered that there is a defect at that location, and the position of the continuous pixel point in the defective image is the position of the defect in the defective image.
[0099] In one possible implementation, see Figure 7 , step S22 may include steps S221 to S223:
[0100] Step S221, obtaining a second defect position corresponding to the defect according to the position of the defect in the defect image and the transformation relationship between the preset image coordinate system and the world coordinate system.
[0101] The second defect position may be the position of the defect derived from the position in the defect image. Specifically, the second defect position may include the wafer to which the defect belongs and the relative position of the defect on the wafer to which it belongs.
[0102] It should be understood that the second defect position may be more accurate than the first defect position.
[0103] Step S222: determining a third shooting position corresponding to the defect according to the second defect position corresponding to the defect.
[0104] It can be understood that the third shooting position is a shooting position that can capture a third defect position.
[0105] Step S223, controlling the camera to move to a third shooting position and shooting an observation image containing defects.
[0106] Optionally, the reference wafer is a wafer without defects.
[0107] When the reference wafer is a non-existent wafer, reference images corresponding to all defects can be obtained on one reference wafer. The process of obtaining the reference image does not require moving the camera between different reference wafers for shooting, which saves the time of moving the camera between different reference wafers and improves observation efficiency.
[0108] Optionally, controlling the camera to capture an observation image containing defects includes:
[0109] The shooting parameters of the camera are adjusted, and an observation image containing defects is shot. The shooting parameters include frame, field of view (ie, magnification), and pixel.
[0110] For example, a frame refers to the number of image frames captured during the shooting process. Increasing the frame means increasing the number of original images captured, and fusing multiple frames of original images to obtain an observed image. Through multi-frame fusion, the image quality of the observed image is improved, the image details are enhanced, and it is more conducive to the manifestation of defects in the observed image.
[0111] For example, the pixels are increased so that the resolution of the observed image is high, thereby improving the clarity and details of the observed image.
[0112] It should be understood that one or more of the shooting parameters may be adjusted, and this embodiment does not limit this.
[0113] Based on the same inventive concept, in order to implement the above method embodiments, this embodiment also provides a defect observation device, such as Figure 8 As shown, Figure 8 1 is a block diagram of a defect observation device according to an exemplary embodiment. The defect observation device 500 can be applied to an observation instrument, and the defect observation device 500 can include:
[0114] The first processing module 501 is configured to control the camera to capture a reference image of a reference wafer at a first capturing position;
[0115] The second processing module 502 is configured to control the camera to capture a defect image containing defects of the defective wafer at a second shooting position, and control the camera to move and capture an observation image containing defects based on the reference image and the defect image, wherein the relative position of the first shooting position and the reference wafer is equal to the relative position of the second shooting position and the defective wafer, and the area occupied by the defect in the observation image is greater than the area occupied by the defect in the defect image.
[0116] Optionally, the number of defects is multiple, and the defect observation device 500 further includes:
[0117] An acquisition module is configured to acquire a first defect position corresponding to each defect, wherein the first defect position includes a wafer to which the defect belongs and a relative position of the defect on the wafer to which the defect belongs;
[0118] A third processing module is configured to determine a first photographing position and a second photographing position corresponding to each defect according to a first defect position corresponding to each defect;
[0119] The loop module is configured to control the camera to capture a defect image containing the defect of the defective wafer at a second shooting position for each defect, and control the camera to move and capture an observation image containing the defect according to the reference image and the defect image until the observation images of all defects are obtained.
[0120] Optionally, the second processing module 502 includes:
[0121] A first processing submodule is configured to determine the position of the defect in the defect image according to the reference image and the defect image;
[0122] The second processing submodule is configured to control the camera to move and capture an observation image containing the defect according to the position of the defect in the defect image.
[0123] Optionally, the first processing submodule is specifically configured as follows:
[0124] Obtaining a pixel difference value according to the pixel value of the reference image and the pixel value of the defect image;
[0125] The position of the defect in the defect image is determined based on the pixel difference and the preset pixel threshold.
[0126] Optionally, the second processing submodule is specifically configured as follows:
[0127] According to the position of the defect in the defect image and the transformation relationship between the preset image coordinate system and the world coordinate system, a second defect position corresponding to the defect is obtained;
[0128] Determining a third shooting position corresponding to the defect according to a second defect position corresponding to the defect;
[0129] The camera is controlled to move to a third shooting position and shoot an observation image containing defects.
[0130] Optionally, the reference wafer is a wafer without defects.
[0131] Optionally, the second processing submodule is specifically configured as follows:
[0132] The shooting parameters of the camera are adjusted, and an observation image containing defects is shot. The shooting parameters include frame, field of view (ie, magnification), and pixel.
[0133] Regarding the defect observation device in the above embodiment, the specific manner in which each module performs operations has been described in detail in the embodiment of the defect observation method, and will not be elaborated here.
[0134] Fig. 9 FIG. 7 is a block diagram of an observation instrument 700 according to an exemplary embodiment. Fig. 9 As shown, the scope 700 may include: a processor 701 , a memory 702 , and a camera. The scope 700 may also include one or more of a multimedia component 703 , an input / output (I / O) interface 704 , and a communication component 705 .
[0135] The processor 701 is used to control the overall operation of the observer 700 to complete all or part of the steps in the defect observation method described above. The memory 702 is used to store various types of data to support the operation of the observer 700. For example, these data may include instructions for any application or method used to operate on the observer 700, and application-related data, such as contact data, sent and received messages, pictures, audio, video, etc. The memory 702 can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic memory, flash memory, magnetic disk or optical disk. The multimedia component 703 may include a screen and an audio component. The screen may be, for example, a touch screen, and the audio component is used to output and / or input audio signals. For example, the audio component may include a microphone, which is used to receive external audio signals. The received audio signal may be further stored in the memory 702 or sent through the communication component 705. The audio component also includes at least one speaker for outputting audio signals. The I / O interface 704 provides an interface between the processor 701 and other interface modules, and the above-mentioned other interface modules may be keyboards, mice, buttons, etc. These buttons may be virtual buttons or physical buttons. The communication component 705 is used for wired or wireless communication between the observer 700 and other devices. Wireless communication, such as Wi-Fi, Bluetooth, Near Field Communication (NFC), 2G, 3G, 4G, NB-IOT, eMTC, or other 5G, etc., or a combination of one or more of them, is not limited here. Therefore, the corresponding communication component 705 may include: Wi-Fi module, Bluetooth module, NFC module, etc.
[0136] In an exemplary embodiment, the observer 700 may be implemented by one or more application specific integrated circuits (ASIC), digital signal processors (DSP), digital signal processing devices (DSPD), programmable logic devices (PLD), field programmable gate arrays (FPGA), controllers, microcontrollers, microprocessors or other electronic components to perform the above-mentioned defect observation method.
[0137] In another exemplary embodiment, a computer-readable storage medium including program instructions is also provided, and when the program instructions are executed by a processor, the steps of the above-mentioned defect observation method are implemented. For example, the computer-readable storage medium can be the above-mentioned memory 702 including program instructions, and the above-mentioned program instructions can be executed by the processor 701 of the observer 700 to complete the above-mentioned defect observation method.
[0138] The preferred embodiments of the present disclosure are described in detail above in conjunction with the accompanying drawings; however, the present disclosure is not limited to the specific details in the above embodiments. Within the technical concept of the present disclosure, a variety of simple modifications can be made to the technical solution of the present disclosure, and these simple modifications all fall within the protection scope of the present disclosure.
[0139] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present disclosure will not further describe various possible combinations.
[0140] In addition, various embodiments of the present disclosure may be arbitrarily combined, and as long as they do not violate the concept of the present disclosure, they should also be regarded as the contents disclosed by the present disclosure.
Claims
1. A defect observation method, characterized in that: The defect observation method comprises: Controlling the camera to capture a reference image of the reference wafer at a first capturing position; The camera is controlled to capture a defect image containing a defect of the defective wafer at a second shooting position, and the camera is controlled to move and capture an observation image containing the defect according to the reference image and the defect image, wherein the relative position of the first shooting position and the reference wafer is equal to the relative position of the second shooting position and the defective wafer, and the area occupied by the defect in the observation image is greater than the area occupied by the defect in the defect image.
2. The defect observation method according to claim 1, characterized in that: The number of defects is multiple, and the defect observation method further includes: Obtaining a first defect position corresponding to each defect, wherein the first defect position includes a wafer to which the defect belongs and a relative position of the defect on the wafer to which the defect belongs; Determine a first photographing position and a second photographing position corresponding to each defect according to a first defect position corresponding to each defect; For each defect, the camera is controlled to capture a defect image of the defective wafer containing the defect at a second shooting position, and the camera is controlled to move and capture an observation image containing the defect according to the reference image and the defect image until observation images of all defects are obtained.
3. The defect observation method according to claim 1 or 2, characterized in that: The step of controlling the camera to move and capture an observation image containing the defect according to the reference image and the defect image comprises: Determining a position of the defect in the defect image according to the reference image and the defect image; According to the position of the defect in the defect image, the camera is controlled to move and capture an observation image containing the defect.
4. The defect observation method according to claim 3, characterized in that: The step of determining the position of the defect in the defect image according to the reference image and the defect image includes: Obtaining a pixel difference value according to a pixel value of the reference image and a pixel value of the defective image; The position of the defect in the defect image is determined according to the pixel difference and a preset pixel threshold.
5. The defect observation method according to claim 3, characterized in that: The step of controlling the camera to move and capture an observation image containing the defect according to the position of the defect in the defect image comprises: Obtaining a second defect position corresponding to the defect according to the position of the defect in the defect image and a transformation relationship between a preset image coordinate system and a world coordinate system; Determining a third shooting position corresponding to the defect according to a second defect position corresponding to the defect; The camera is controlled to move to the third shooting position and shoot an observation image containing the defect.
6. The defect observation method according to claim 1, characterized in that: The reference wafer is a wafer without defects.
7. The defect observation method according to claim 1, characterized in that: Controlling the camera to capture an observation image containing the defect, including: The shooting parameters of the camera are adjusted, and an observation image containing the defect is shot, wherein the shooting parameters include frame, field of view and pixel.
8. A defect observation device, characterized in that: The defect observation device comprises: A first processing module is configured to control the camera to capture a reference image of a reference wafer at a first capturing position; The second processing module is configured to control the camera to capture a defect image containing a defect of the defective wafer at a second shooting position, and control the camera to move and capture an observation image containing the defect based on the reference image and the defect image, wherein the relative position of the first shooting position and the reference wafer is equal to the relative position of the second shooting position and the defective wafer, and the area occupied by the defect in the observation image is greater than the area occupied by the defect in the defect image.
9. A non-transitory computer-readable storage medium having a computer program stored thereon, characterized in that: When the program is executed by a processor, the steps of the defect observation method described in any one of claims 1 to 7 are implemented.
10. An observation instrument, characterized in that: include: Camera; a memory having a computer program stored thereon; A processor, configured to execute the computer program in the memory to implement the steps of the defect observation method according to any one of claims 1 to 7.