Double-pulse test protection device and method for SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor)

Abstract

The invention relates to a double-pulse test protection device and method for a SiC MOSFET. The device is connected with an upper tube device and a lower tube device. An upper tube device and a lower tube device are detected by introducing a conduction detector and a turn-off detector, specifically, the conduction detector is arranged at a source electrode of the upper tube device, the turn-off detector is arranged at a source electrode of the lower tube device, and dynamic parameters generated by the two devices are obtained under different test working conditions; and whether the dynamic parameter is within a safety threshold range is judged, so that different processing measures are automatically executed according to different judgment results. The device has the advantages of being high in intelligent degree, high in recognition accuracy and high in working reliability.

Description

Technical Field

[0001] The invention belongs to the technical field of automated testing, and in particular relates to a double pulse testing protection device and method for a SiC MOSFET. Background Art

[0002] The switching speed of SiC MOSFET is faster than that of conventional Si-based devices. The switching transient will produce a large current change rate, which can easily cause serious high-frequency oscillation of the circuit. Under high-frequency switching, due to the rapid changes in parameters such as voltage and current, the high current change rate will generate an induced voltage through the parasitic inductance of the main circuit and generate a voltage spike on the drain-source voltage, which may cause damage to the circuit and devices.

[0003] In order to fully utilize the advantages of SiC MOSFET, it is very important to characterize the dynamic performance of SiC MOSFET. Double pulse testing (DPT) is a commonly used method that can extract and analyze information including loss, time, overshoot, loss, and switching speed by measuring voltage and current waveforms. The current change rate is a key parameter for evaluating and optimizing the performance of SiC devices. It also has an important impact on the reliability of the device and directly affects the switching loss, dynamic response, and durability of the device. By accurately controlling and measuring the current change rate, the performance and service life of SiC devices can be improved.

[0004] In the existing double pulse test scheme, in order to prevent the power device under test from being damaged during the test, such as when the device's operating conditions exceed the safe area, testers with rich testing experience usually monitor the real-time test data. However, the test method relying on manual monitoring seriously restricts the possibility of conducting a large number of working condition tests on power devices and is prone to introducing subjective errors. Summary of the invention

[0005] In order to solve the above problems existing in the prior art, the present invention provides a double pulse test protection device and method for SiC MOSFET. The technical problem to be solved by the present invention is achieved by the following technical solutions:

[0006] In a first aspect, the present invention provides a dual pulse test protection device for a SiC MOSFET, the device being connected to an upper tube device and a lower tube device, respectively; the device comprising: a power module, a pulse generator, a resistance adjuster, a shutdown detector, a conduction detector and a data analyzer; the power module is connected to the pulse generator, the pulse generator is connected to the resistance adjuster, the resistance adjuster is connected to the upper tube device and the lower tube device, respectively, the pulse generator is used to provide a first pulse test signal and a second pulse test signal to the upper tube device and the lower tube device, respectively; the conduction detector is connected to the lower tube device and the data analyzer, respectively, and is used to obtain a first detection parameter generated by the upper tube device under the first pulse test signal, and a second detection parameter generated by the upper tube device under the second pulse test signal, and send the first detection parameter or the second detection parameter to the data analyzer; The shutdown detector is connected to the upper tube device, the lower tube device and the data analyzer, respectively, and is used to respectively obtain the third detection parameter generated by the lower tube device under the first pulse test signal and the fourth detection parameter generated by the lower tube device under the second pulse test signal, and send the third detection parameter or the fourth detection parameter to the data analyzer; the data analyzer is used to determine whether the first detection parameter and the third detection parameter are respectively within the corresponding safety threshold range, and if not, generate a first adjustment signal so that the resistance adjuster responds to the first adjustment signal and performs a first protection processing, and if so, determine whether the second detection parameter and the fourth detection parameter are respectively within the corresponding safety threshold range, and if not, generate a second adjustment signal so that the resistance adjuster responds to the second adjustment signal and performs a second protection processing, and if so, end the test.

[0007] In some embodiments, the pulse generator includes: a pulse generator Vgs1; the resistance adjuster includes: a first resistance adjuster, a second resistance adjuster, a resistor R1, an inverter D1 and a capacitor C1; wherein, the negative electrode of the pulse generator Vgs1 is connected to the first end of the power module, and the positive electrode is connected to the first input end of the first resistance adjuster, the output end of the first resistance adjuster is respectively connected to the first input end of the second resistance adjuster and the first end of the resistor R1, the second end of the resistor R1 is connected to the input end of the inverter D1, the output end of the second resistance adjuster is respectively connected to the first end of the capacitor C1, the gate of the lower tube device and the output end of the inverter D1, the second end of the capacitor C1 is connected to the negative electrode of the pulse generator Vgs1 and grounded; the second input end of the first resistance adjuster and the second input end of the second resistance adjuster are both connected to the input end of the data analyzer.

[0008] In some embodiments, the pulse generator includes: a pulse generator Vgs1; the resistance adjuster includes: a first resistance adjuster, a second resistance adjuster, an inverter D2, an inverter D3 and a capacitor C1; wherein, the negative electrode of the pulse generator Vgs1 is connected to the first end of the power module, and the positive electrode is respectively connected to the first input end of the first resistance adjuster and the first input end of the second resistance adjuster, the output end of the first resistance adjuster is connected to the input end of the inverter D2, the output end of the second resistance adjuster is connected to the input end of the inverter D3, the output end of the inverter D2 and the output end of the inverter D3 are both connected to the first end of the capacitor C1 and the gate of the lower tube device, the second end of the capacitor C1 is connected to the negative electrode of the pulse generator Vgs1 and is grounded; the second input end of the first resistance adjuster and the second input end of the second resistance adjuster are both connected to the input end of the data analyzer.

[0009] In some embodiments, the pulse generator includes: a pulse generator Vgs2; the shutdown detector includes: a first detection module, an inductor L1, an inductor L2 and an inductor L3; wherein the positive electrode of the pulse generator Vgs2 is connected to the gate of the upper tube device, and the negative electrode is respectively connected to the first end of the inductor L3, the first end of the first detection module and the first end of the inductor L1; the second end of the first detection module is connected to the source of the upper tube device, the drain of the upper tube device, the second end of the inductor L1 and the first end of the inductor L2 are connected, and the second end of the inductor L2 is connected to the second end of the power module; the third end of the first detection module is connected to the input end of the data analyzer.

[0010] In some embodiments, the conduction detector includes: a second detection module and an inductor L4 connected in sequence; wherein, the first end of the second detection module is connected to the source of the down tube device, the third end of the second detection module is connected to the input end of the data analyzer, and the second end of the inductor L4 is connected to the negative pole of the pulse generator Vgs1 and grounded.

[0011] In some embodiments, the power supply module includes: a constant voltage source Vds and a capacitor C2 connected in parallel; the first end of the constant voltage source Vds and the first end of the capacitor C2 serve as the first end of the power supply module, and the second end of the constant voltage source Vds and the second end of the capacitor C2 serve as the second end of the power supply module.

[0012] In some embodiments, the first adjustment signal includes: a first signal and / or a second signal; the first signal is obtained by converting a first deviation value, the first deviation value includes the value of the first detection parameter deviating from the safety threshold range corresponding to the first detection parameter; the second signal is obtained by converting a second deviation value, the second deviation value includes the value of the third detection parameter deviating from the safety threshold range corresponding to the third detection parameter; the second adjustment signal includes: a third signal and / or a fourth signal; the third signal is obtained by converting a third deviation value, the third deviation value includes the value of the second detection parameter deviating from the safety threshold range corresponding to the second detection parameter; the fourth signal is obtained by converting a fourth deviation value, the fourth deviation value includes the value of the fourth detection parameter deviating from the safety threshold range corresponding to the fourth detection parameter.

[0013] In some embodiments, the resistance adjuster includes: a first resistance adjuster and a second resistance adjuster; the first protection processing or the second protection processing includes: in response to the first adjustment signal or the second adjustment signal, the first resistance adjuster adjusts the overall resistance of the device, and the second resistance adjuster adjusts the difference between the gate on-resistance and the off-resistance of the down-tube device, so that the values ​​of the first detection parameter and the third detection parameter both fall within the corresponding safety threshold range.

[0014] In some embodiments, the first detection parameter, the second detection parameter, the third detection parameter and the fourth detection parameter are of the same parameter type and are at least one of a current change rate, a peak current and a peak voltage.

[0015] In a second aspect, the present invention provides a double pulse test protection method for SiC MOSFET, the method is applied to the double pulse test protection device for SiC MOSFET described in the first aspect, the device is connected to the upper tube device and the lower tube device respectively; the method includes: obtaining a first detection parameter and a third detection parameter under a first pulse test signal, the first detection parameter refers to the detection parameter generated by the lower tube device under the first pulse test signal, and the third detection parameter refers to the detection parameter generated by the upper tube device under the first pulse test signal; judging whether the first detection parameter and the third detection parameter are respectively within the corresponding safety threshold range, if not, executing the first protection processing; if so, obtaining a second detection parameter and a fourth detection parameter under a second pulse test signal, the third detection parameter refers to the detection parameter generated by the lower tube device under the second pulse test signal, and the fourth detection parameter refers to the detection parameter generated by the upper tube device under the second pulse test signal; judging whether the second detection parameter and the fourth detection parameter are respectively within the corresponding safety threshold range, if not, executing the second protection processing, and if so, ending the test.

[0016] Compared with the prior art, the present invention has the following beneficial effects:

[0017] In view of the problem that the existing dual-pulse test scheme has a low degree of intelligence, the present invention provides a dual-pulse test protection device and method for SiC MOSFET. The device introduces a conduction detector and a shutdown detector to detect the upper tube device and the lower tube device. Specifically, a conduction detector is set at the upper tube device, and a shutdown detector is set at the lower tube device. Under different test conditions, the dynamic parameters generated by the two devices are obtained, and it is judged whether the dynamic parameters are within the safety threshold range, and then different processing measures are automatically executed according to different judgment results. Compared with the judgment by technicians based on experience values, which is inefficient and easy to introduce human errors, the technical solution proposed by the present invention has the advantages of high intelligence, simple operation and high working reliability, and can effectively reduce the operation threshold of testers. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a structural block diagram of a double pulse test protection device for SiC MOSFET proposed in an embodiment of the present invention;

[0019] Figure 2 It is a structural connection diagram of a double pulse test protection device for SiC MOSFET proposed in an embodiment of the present invention;

[0020] Figure 3 1 is another structural connection diagram of a double pulse test protection device for SiC MOSFET proposed in an embodiment of the present invention;

[0021] Figure 4 It is a flow chart of a double pulse test protection method for SiC MOSFET provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0022] The present invention is further described in detail below with reference to specific embodiments, but the embodiments of the present invention are not limited thereto.

[0023] In the description of the present invention, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0024] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples described in this specification.

[0025] Although the present invention is described herein in conjunction with various embodiments, in the process of implementing the claimed invention, those skilled in the art may understand and implement other variations of the disclosed embodiments by viewing the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other components or steps, and "one" or "an" does not exclude multiple situations. A single processor or other unit may implement several functions listed in the claims. Certain measures are recorded in different dependent claims, but this does not mean that these measures cannot be combined to produce good results.

[0026] A double pulse test protection device and method for SiC MOSFET proposed in the present invention will now be described in detail with reference to the accompanying drawings.

[0027] Figure 1 FIG. 1 is a block diagram of a double pulse test protection device for SiC MOSFET proposed in an embodiment of the present invention. Figure 1As shown, the device is connected to the upper tube device and the lower tube device respectively; the device includes: a power module, a pulse generator, a resistance adjuster, a shutdown detector, a conduction detector and a data analyzer; the power module is connected to the pulse generator, the pulse generator is connected to the resistance adjuster, the resistance adjuster is connected to the upper tube device and the lower tube device respectively, the pulse generator is used to provide a first pulse test signal and a second pulse test signal to the upper tube device and the lower tube device respectively; the conduction detector is connected to the lower tube device and the data analyzer respectively, and is used to obtain a first detection parameter generated by the upper tube device under the first pulse test signal, and a second detection parameter generated by the upper tube device under the second pulse test signal, and send the first detection parameter or the second detection parameter to the data analyzer; the shutdown detector is connected to the upper tube device and the lower tube device respectively. Connected to the upper tube device, the lower tube device and the data analyzer, and used to respectively obtain the third detection parameter generated by the lower tube device under the first pulse test signal, and the fourth detection parameter generated by the lower tube device under the second pulse test signal, and send the third detection parameter or the fourth detection parameter to the data analyzer; the data analyzer is used to determine whether the first detection parameter and the third detection parameter are respectively within the corresponding safety threshold range, and if not, generate a first adjustment signal so that the resistance adjuster responds to the first adjustment signal and performs a first protection processing, and if so, determine whether the second detection parameter and the fourth detection parameter are respectively within the corresponding safety threshold range, and if not, generate a second adjustment signal so that the resistance adjuster responds to the second adjustment signal and performs a second protection processing, and if so, end the test.

[0028] Here, the resistance adjuster includes two structural connection relationships. The connection relationship of the device is now introduced.

[0029] In one possible implementation, Figure 2 As shown, the pulse generator includes: a pulse generator Vgs1; the resistance adjuster includes: a first resistance adjuster, a second resistance adjuster, a resistor R1, an inverter D1 and a capacitor C1; wherein, the negative electrode of the pulse generator Vgs1 is connected to the first end of the power module, the positive electrode is connected to the first input end of the first resistance adjuster, the output end of the first resistance adjuster is respectively connected to the first input end of the second resistance adjuster and the first end of the resistor R1, the second end of the resistor R1 is connected to the input end of the inverter D1, the output end of the second resistance adjuster is respectively connected to the first end of the capacitor C1, the gate of the lower tube device and the output end of the inverter D1, the second end of the capacitor C1 is connected to the negative electrode of the pulse generator Vgs1 and is grounded; the second input end of the first resistance adjuster and the second input end of the second resistance adjuster are both connected to the input end of the data analyzer.

[0030] In another possible implementation, Figure 3As shown, the pulse generator includes: a pulse generator Vgs1; the resistance adjuster includes: a first resistance adjuster, a second resistance adjuster, an inverter D2, an inverter D3 and a capacitor C1; wherein, the negative electrode of the pulse generator Vgs1 is connected to the first end of the power module, and the positive electrode is respectively connected to the first input end of the first resistance adjuster and the first input end of the second resistance adjuster, the output end of the first resistance adjuster is connected to the input end of the inverter D2, the output end of the second resistance adjuster is connected to the input end of the inverter D3, the output end of the inverter D2 and the output end of the inverter D3 are both connected to the first end of the capacitor C1 and the gate of the lower tube device, and the second end of the capacitor C1 is connected to the negative electrode of the pulse generator Vgs1 and grounded; the second input end of the first resistance adjuster and the second input end of the second resistance adjuster are both connected to the input end of the data analyzer.

[0031] It should be noted that Figure 2 and Figure 3 Except for the structure of the resistor adjuster, other structural devices are the same.

[0032] Here, the conduction detector includes: a second detection module and an inductor L4 connected in sequence; wherein the first end of the second detection module is connected to the source of the lower tube device, the third end of the second detection module is connected to the input end of the data analyzer, and the second end of the inductor L4 is connected to the negative electrode of the pulse generator Vgs1 and grounded. In addition, the pulse generator includes: a pulse generator Vgs2; the shutdown detector includes: a first detection module, an inductor L1, an inductor L2 and an inductor L3; wherein the positive electrode of the pulse generator Vgs2 is connected to the gate of the upper tube device, and the negative electrode is respectively connected to the first end of the inductor L3, the first end of the first detection module and the first end of the inductor L1; the second end of the first detection module is connected to the source of the upper tube device, the drain of the upper tube device, the second end of the inductor L1 and the first end of the inductor L2 are connected, and the second end of the inductor L2 is connected to the second end of the power module; the third end of the first detection module is connected to the input end of the data analyzer.

[0033] Here, the power module includes: a constant voltage source Vds and a capacitor C2 connected in parallel; the first end of the constant voltage source Vds and the first end of the capacitor C2 serve as the first end of the power module, and the second end of the constant voltage source Vds and the second end of the capacitor C2 serve as the second end of the power module.

[0034] The working principle of the double pulse test protection device for SiC MOSFET proposed in the embodiment of the present invention is now described.

[0035] Here, during the test, the power supply Vds provides a constant voltage, the pulse generator provides a positive voltage (generally 15V to 22V) to turn on the device, and provides a negative voltage (generally -5V) to turn off the device; the upper tube device is a reverse recovery tube and is always in the off state, and the lower tube device is the main test tube, which will experience two pulse test signals (or two test conditions). The first pulse test signal is used to turn on the device, so that the device is converted from the off state to the on state, and the second pulse test signal is used to turn off the device, so that the device is converted from the on state to the off state. There is a time interval between the two pulse test signals, allowing the device to be in a stable state between the two pulses. Correspondingly, the first test condition refers to the lower tube device responding to the first pulse signal from the off state to the on state; the second test condition refers to the lower tube device responding to the second pulse signal from the on state to the off state. It should be noted that both the upper tube device and the lower tube device are NMOS tubes.

[0036] Furthermore, under the two test conditions, the dynamic parameters are obtained by using the off detector and the on detector. Since SiC MOSFET is prone to overstress conditions such as current peaks and voltage peaks that can damage the device during the switching process, it is necessary to detect the switching current and the switching peak voltage. Specifically, the first detection parameter, the second detection parameter, the third detection parameter, and the fourth detection parameter have the same parameter type, and are all at least one of the current change rate, the peak current, and the peak voltage.

[0037] Here, the on-detector and the off-detector can be a current detection sensor, a voltage detection sensor, and a multimeter. Since the upper tube device is easily damaged by stress impact when the lower tube device is on, and the lower tube device is easily damaged by stress impact when the lower tube device is off, therefore, when the lower tube device is on (under the first test condition), the on-detector is used to detect the current stress value at the upper tube device; when the lower tube device is off (under the second test condition), the off-detector is used to detect the current stress value at the lower tube device, and the detected dynamic parameters are sent to the data analyzer, and the data analyzer determines whether the dynamic parameters at the corresponding upper tube device or lower tube device are within the safety threshold range under the first test condition or the second test condition, and generates a first adjustment signal when it is determined that the first detection parameter is not within the corresponding safety threshold range and / or the third detection parameter is not within the corresponding safety threshold range under the first test condition, and generates a second adjustment signal when the second detection parameter is not within the corresponding safety threshold range and / or the fourth detection parameter is not within the corresponding safety threshold range under the second test condition. Specifically, the first adjustment signal includes: a first signal and / or a second signal; the first signal is obtained by converting a first deviation value, the first deviation value includes a value of the first detection parameter deviating from a safety threshold range corresponding to the first detection parameter; the second signal is obtained by converting a second deviation value, the second deviation value includes a value of the third detection parameter deviating from a safety threshold range corresponding to the third detection parameter; and the second adjustment signal includes: a third signal and / or a fourth signal; the third signal is obtained by converting a third deviation value, the third deviation value includes a value of the second detection parameter deviating from a safety threshold range corresponding to the second detection parameter; the fourth signal is obtained by converting a fourth deviation value, the fourth deviation value includes a value of the fourth detection parameter deviating from the safety threshold range corresponding to the fourth detection parameter.

[0038] Here, the first protection processing or the second protection processing includes: in response to the first adjustment signal or the second adjustment signal, the first resistor adjuster adjusts the overall resistance of the device, and the second resistor adjuster adjusts the difference between the gate on-resistance and the off-resistance of the lower tube device, so that the values ​​of the first detection parameter and the third detection parameter fall within the corresponding safety threshold range.

[0039] In a possible implementation, the first resistance adjuster and the second resistance adjuster are both variable resistors, and specific types may include: digital potentiometer, sliding variable resistor, rotary variable resistor, linear variable resistor and non-linear variable resistor.

[0040] It should be noted that first, the first resistor adjuster is used to adjust the resistance of the overall test circuit multiple times, and the adjustment range is 0 to 50Ω to determine the approximate resistance variation range. Then, the second resistor adjuster is used to adjust the difference between the gate on-resistance and the off-resistance of the lower tube multiple times, so that the dynamic parameters detected by the off-detector and the on-detector are within their respective safety threshold ranges. By using the first resistor adjuster and the second resistor adjuster in combination, the differences in turn-on performance and turn-off performance of different devices can be adapted, which is beneficial to improving the dynamic detection performance of the dual-pulse test circuit and improving test safety.

[0041] Corresponding to the double pulse test protection device of SiC MOSFET proposed in the embodiment of the present invention, the embodiment of the present invention also provides a double pulse test protection method of SiC MOSFET. The method is applied to the double pulse test protection device of SiC MOSFET, and the device is connected to the upper tube device and the lower tube device respectively; Figure 4 FIG. 1 is a flow chart of a double pulse test protection method for SiC MOSFET provided by an embodiment of the present invention. Figure 4 As shown, the method includes:

[0042] Step 110: Obtain a first detection parameter and a third detection parameter under a first pulse test signal, wherein the first detection parameter refers to a detection parameter generated by a lower tube device under the first pulse test signal, and the third detection parameter refers to a detection parameter generated by an upper tube device under the first pulse test signal.

[0043] Here, the lower tube device switches from an off state to an on state in response to a first pulse signal, the on-state detector obtains a first detection parameter, and the off-state detector obtains a third detection parameter, wherein the first detection parameter or the third detection parameter includes at least one of a current change rate, a peak current, and a peak voltage.

[0044] Step 120: Determine whether the first detection parameter and the third detection parameter are respectively within the corresponding safety threshold ranges; if not, execute the first protection process.

[0045] Here, after receiving the first detection parameter and the third detection parameter, the data analyzer judges them respectively and performs corresponding processing based on different results, which will not be described here for the sake of brevity.

[0046] Step 130: If yes, obtain the second detection parameter and the fourth detection parameter under the second pulse test signal, the third detection parameter refers to the detection parameter generated by the lower tube device under the second pulse test signal, and the fourth detection parameter refers to the detection parameter generated by the upper tube device under the second pulse test signal.

[0047] Here, the lower tube device switches from the on state to the off state in response to the second pulse signal, the on detector obtains the second detection parameter, and the off detector obtains the fourth detection parameter, wherein the second detection parameter or the fourth detection parameter includes at least one of the current change rate, the peak current, and the peak voltage.

[0048] Step 140: Determine whether the second detection parameter and the fourth detection parameter are respectively within the corresponding safety threshold ranges; if not, execute the second protection process; if so, end the test.

[0049] In view of the problem that the existing dual-pulse test scheme has a low degree of intelligence, the present invention provides a dual-pulse test protection device and method for SiC MOSFET. The device introduces a conduction detector and a shutdown detector to detect the upper tube device and the lower tube device. Specifically, a conduction detector is set at the upper tube device, and a shutdown detector is set at the lower tube device. Under different test conditions, dynamic parameters generated by the two devices are obtained, and it is judged whether the dynamic parameters are within a safety threshold range, and then different processing measures are automatically executed according to different judgment results. Compared with the judgment by technicians based on experience values, which is inefficient and easy to introduce human errors, the technical solution proposed by the present invention has the advantages of high intelligence, high recognition accuracy and high working reliability.

[0050] The above contents are further detailed descriptions of the present invention in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is limited to these descriptions. For ordinary technicians in the technical field to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, which should be regarded as falling within the scope of protection of the present invention.

Claims

1. A double pulse test protection device for SiC MOSFET, the device being connected to an upper tube device and a lower tube device respectively; characterized in that: The device comprises: a power module, a pulse generator, a resistance adjuster, a shutdown detector, a conduction detector and a data analyzer; the power module is connected to the pulse generator, the pulse generator is connected to the resistance adjuster, the resistance adjuster is respectively connected to the upper tube device and the lower tube device, and the pulse generator is used to provide a first pulse test signal and a second pulse test signal to the upper tube device and the lower tube device respectively; The conduction detector is connected to the lower tube device and the data analyzer, respectively, and is used to respectively obtain a first detection parameter generated by the lower tube device under the first pulse test signal and a second detection parameter generated by the lower tube device under the second pulse test signal, and send the first detection parameter or the second detection parameter to the data analyzer; The shutdown detector is connected to the upper tube device, the lower tube device and the data analyzer respectively, and is used to respectively obtain a third detection parameter generated by the upper tube device under the first pulse test signal and a fourth detection parameter generated by the upper tube device under the second pulse test signal, and send the third detection parameter or the fourth detection parameter to the data analyzer; The data analyzer is used to determine whether the first detection parameter and the third detection parameter are respectively within the corresponding safety threshold range. If not, a first adjustment signal is generated to enable the resistance adjuster to respond to the first adjustment signal and perform a first protection process. If so, it is used to determine whether the second detection parameter and the fourth detection parameter are respectively within the corresponding safety threshold range. If not, a second adjustment signal is generated to enable the resistance adjuster to respond to the second adjustment signal and perform a second protection process. If so, the test is terminated.

2. The double pulse test protection device for SiC MOSFET according to claim 1, characterized in that: The pulse generator includes: a pulse generator Vgs1; the resistance adjuster includes: a first resistance adjuster, a second resistance adjuster, a resistor R1, an inverter D1 and a capacitor C1; The negative electrode of the pulse generator Vgs1 is connected to the first end of the power module, the positive electrode is connected to the first input end of the first resistor adjuster, the output end of the first resistor adjuster is respectively connected to the first input end of the second resistor adjuster and the first end of the resistor R1, the second end of the resistor R1 is connected to the input end of the inverter D1, the output end of the second resistor adjuster is respectively connected to the first end of the capacitor C1, the gate of the lower tube device and the output end of the inverter D1, and the second end of the capacitor C1 is connected to the negative electrode of the pulse generator Vgs1 and grounded; The second input terminal of the first resistance adjuster and the second input terminal of the second resistance adjuster are both connected to the input terminal of the data analyzer.

3. The double pulse test protection device for SiC MOSFET according to claim 1, characterized in that: The pulse generator includes: a pulse generator Vgs1; the resistance adjuster includes: a first resistance adjuster, a second resistance adjuster, an inverter D2, an inverter D3 and a capacitor C1; Wherein, the cathode of the pulse generator Vgs1 is connected to the first end of the power module, the anode is respectively connected to the first input end of the first resistor adjuster and the first input end of the second resistor adjuster, the output end of the first resistor adjuster is connected to the input end of the inverter D2, the output end of the second resistor adjuster is connected to the input end of the inverter D3, the output end of the inverter D2 and the output end of the inverter D3 are both connected to the first end of the capacitor C1 and the gate of the lower tube device, and the second end of the capacitor C1 is connected to the cathode of the pulse generator Vgs1 and grounded; The second input terminal of the first resistance adjuster and the second input terminal of the second resistance adjuster are both connected to the input terminal of the data analyzer.

4. The double pulse test protection device for SiC MOSFET according to claim 1, characterized in that: The pulse generator includes: a pulse generator Vgs2; the shutdown detector includes: a first detection module, an inductor L1, an inductor L2 and an inductor L3; The positive electrode of the pulse generator Vgs2 is connected to the gate of the upper tube device, and the negative electrode is respectively connected to the first end of the inductor L3, the first end of the first detection module and the first end of the inductor L1; The second end of the first detection module is connected to the source of the upper tube device, the drain of the upper tube device, the second end of the inductor L1 and the first end of the inductor L2 are connected, and the second end of the inductor L2 is connected to the second end of the power module; The third terminal of the first detection module is connected to the input terminal of the data analyzer.

5. The double pulse test protection device for SiC MOSFET according to claim 2 or 3, characterized in that: The conduction detector comprises: a second detection module and an inductor L4 connected in sequence; Among them, the first end of the second detection module is connected to the source of the lower tube device, the third end of the second detection module is connected to the input end of the data analyzer, and the second end of the inductor L4 is connected to the negative electrode of the pulse generator Vgs1 and grounded.

6. The double pulse test protection device for SiC MOSFET according to claim 1, characterized in that: The power supply module comprises: a constant voltage source Vds and a capacitor C2 connected in parallel; The first end of the constant voltage source Vds and the first end of the capacitor C2 serve as the first end of the power module, and the second end of the constant voltage source Vds and the second end of the capacitor C2 serve as the second end of the power module.

7. The double pulse test protection device for SiC MOSFET according to claim 1, characterized in that: The first adjustment signal includes: a first signal and / or a second signal; the first signal is obtained by converting a first deviation value, the first deviation value includes a value of the first detection parameter deviating from a safety threshold range corresponding to the first detection parameter; the second signal is obtained by converting a second deviation value, the second deviation value includes a value of the third detection parameter deviating from a safety threshold range corresponding to the third detection parameter; The second adjustment signal includes: a third signal and / or a fourth signal; the third signal is obtained by converting a third deviation value, and the third deviation value includes the value of the second detection parameter deviating from the safety threshold range corresponding to the second detection parameter; the fourth signal is obtained by converting a fourth deviation value, and the fourth deviation value includes the value of the fourth detection parameter deviating from the safety threshold range corresponding to the fourth detection parameter.

8. The double pulse test protection device for SiC MOSFET according to claim 1, characterized in that: The resistance adjuster includes: a first resistance adjuster and a second resistance adjuster; the first protection process or the second protection process includes: In response to the first adjustment signal or the second adjustment signal, the first resistor adjuster adjusts the overall resistance of the device, and the second resistor adjuster adjusts the difference between the gate on-resistance and the off-resistance of the lower tube device, so that the values ​​of the first detection parameter and the third detection parameter both fall within the corresponding safety threshold range.

9. The double pulse test protection device for SiC MOSFET according to claim 1, characterized in that: The first detection parameter, the second detection parameter, the third detection parameter and the fourth detection parameter are of the same parameter type and are at least one of a current change rate, a peak current and a peak voltage.

10. A double pulse test protection method for SiC MOSFET, characterized in that: The method is applied to the double pulse test protection device of SiC MOSFET according to any one of claims 1 to 9, wherein the device is connected to the upper tube device and the lower tube device respectively; the method comprises: Acquire a first detection parameter and a third detection parameter under a first pulse test signal, wherein the first detection parameter refers to a detection parameter generated by the lower tube device under the first pulse test signal, and the third detection parameter refers to a detection parameter generated by the upper tube device under the first pulse test signal; Determine whether the first detection parameter and the third detection parameter are respectively within the corresponding safety threshold range, and if not, perform a first protection process; If yes, obtain a second detection parameter and a fourth detection parameter under a second pulse test signal, wherein the third detection parameter refers to a detection parameter generated by the lower tube device under the second pulse test signal, and the fourth detection parameter refers to a detection parameter generated by the upper tube device under the second pulse test signal; Determine whether the second detection parameter and the fourth detection parameter are respectively within the corresponding safety threshold range; if not, execute the second protection processing; if so, end the test.

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