Surface crystal wafer and processing method of surface crystal oscillator

Abstract

The invention discloses a processing method of a surface crystal wafer, and relates to the field of surface crystal wafer production. The whole surface crystal wafer is cut from the front side and the back side of the wafer by using a sand blasting and ultrasonic cutting method, and the cut section is arc-shaped based on the sand blasting and ultrasonic cutting method, so that the area of a plated electrode is increased, and the quality of a surface crystal oscillator is improved. The electrode plating operation is carried out based on the whole plate surface crystal wafer, and the essential wet etching step in the traditional processing technology is omitted in the scheme. The invention further discloses a processing method of the surface crystal oscillator based on the whole-board surface crystal wafers, after the whole-board surface crystal wafers are subjected to quality inspection and the positions of defective products are marked, information is uploaded to the server, the whole surface crystal wafers are integrally positioned on the tool, and then the whole-board surface crystal oscillator is processed on the basis of the accurate position of each surface crystal wafer on the whole-board surface crystal wafers recorded by the server and the positions of the defective products. According to the method, the surface crystal wafers are taken one by one by the mechanical arm and fed to the whole plate base, coordinate switching from a regular matrix to a matrix is achieved, the calculation process is simple and accurate, and the step of repositioning in the machining process of the single surface crystal wafer is omitted.

Description

Technical Field

[0001] The invention relates to the field of surface crystal chip production, and in particular to a surface crystal chip and a surface crystal oscillator processing method. Background Art

[0002] The core of the tuning fork crystal oscillator (i.e., the tuning fork crystal oscillator) is the crystal wafer cut from the quartz crystal. The conventional on-site production of the crystal oscillator is to process single crystal wafers one by one, then clean the single crystal wafers one by one, and then stack the single crystal wafers in the tooling for coating. Finally, the mechanical equipment clamps the crystal wafers and places them on the dispensing platform of the base for dispensing. This method of processing the crystal wafers one by one and then stacking them one by one has low work efficiency, and a certain proportion of the crystal wafers are damaged when clamping the crystal wafers, resulting in a high defective rate. The production of crystal oscillators one by one has the following problems: 1. There are many processes and bulk packaging is required; 2. There are potential risks such as scratches and contamination of surface crystal wafers; 3. Take the slices one by one, which is not convenient for appearance selection. 4. When coating, the chips need to be coated one by one.

[0003] Therefore, there is a need for a surface crystal wafer and a processing method for a surface crystal oscillator that can produce chips in batches, has high chip efficiency, and reduces the defective rate of surface crystal wafers. Summary of the invention

[0004] In order to solve the defects of the existing surface crystal chip code chips are coded one by one, the efficiency is low, and the defective rate of the surface crystal oscillator is low, the present invention provides a surface crystal chip and a surface crystal oscillator processing method which can batch code chips, has high code chip efficiency and reduces the defective rate of the surface crystal chip.

[0005] A surface crystal wafer processing method according to the present invention comprises the following steps: S1, take a wafer; S2, cutting the wafer according to the outline of the surface crystal wafer to obtain a hollow wafer with a hollow pattern, wherein the hollow pattern is the position between adjacent surface crystal wafers, and each surface crystal wafer and the hollow wafer retain at least one uncut connection point; S3, plating a metal layer on the surface crystal chip electrode area on the surface of the hollow wafer to obtain a whole plate of surface crystal chips.

[0006] The beneficial effects of adopting the above technical solution are: First, the whole-board surface crystal wafer avoids the packaging process during single-chip processing, and also avoids the problems of scratches, contamination, etc. that may be caused during the single-chip processing and packaging process; Secondly, the whole plate surface crystal chip obtained based on wafer processing is itself arranged in a matrix. Electrodes are directly plated based on the ready-made matrix arrangement, eliminating the process of coding each chip one by one.

[0007] Further: In S2, the cutting according to the contour of the surface crystal wafer is performed simultaneously from the upper and lower directions of the wafer by sandblasting + water ultrasonic method, specifically including making a surface crystal wafer mask pattern on the wafer, protecting the surface crystal wafer position to avoid the influence of sandblasting, and then cutting by sandblasting + water ultrasonic method to grind and cut off the position not covered by the mask.

[0008] The beneficial effect of adopting the above technical solution is: due to the sandblasting cutting method, the cut groove is V-shaped, so the cut surface obtained by cutting both sides at the same time is roughly an arc surface, and this arc surface will be plated with metal later to form a part of the electrode. The arc surface has a larger area than the plane, so this method increases the coating area of ​​the electrode. The larger the coating area, the smaller the impedance, so it is beneficial to improve the quality of the tuning fork type crystal chip.

[0009] The cutting surface obtained by the processing method has no burrs, because the grinding liquid formed by sand and water can remove the burrs generated in the processing process under the action of ultrasonic waves, thereby improving the surface quality.

[0010] Finally, the method cuts from both sides simultaneously, doubling the cutting efficiency.

[0011] Furthermore: the connection between the surface crystal chip and the wafer is pre-cut with a pre-breaking line, and the pre-breaking line is cut but not cut off, so that the chip can be easily broken when the robot automatically takes the chip and puts it on.

[0012] Furthermore, the pre-fracture line is realized by laser etching, which can better control the cutting depth.

[0013] Furthermore, the metal layer is plated on the electrode area of ​​the surface crystal chip on the surface of the hollow wafer, specifically by setting a whole plate mask tooling based on the entire wafer, applying it on the whole plate surface crystal chip, and coating by sputtering coating.

[0014] Furthermore, the metal layer is plated on the electrode area of ​​the surface crystal chip on the surface of the hollow wafer, specifically by coating the entire surface of the entire plate of surface crystal chips with a metal film, and then using laser burning to burn away excess parts between the electrodes to obtain the electrodes.

[0015] The present invention discloses a method for processing a surface crystal oscillator, which is a method for processing a surface crystal oscillator based on a whole plate of surface crystal wafers, and comprises the following steps: The first step is to take the whole plate of surface crystal wafers, inspect the whole plate of surface crystal wafers, mark the ID of the whole plate of surface crystal wafers, mark the position information of the unqualified surface crystal wafers in the whole plate of surface crystal wafers and enter them into the system; The second step is to fix the positions of the whole-board surface crystal chip and the whole-board base, read the ID of the whole-board surface crystal chip and the ID of the whole-board base, so as to obtain their respective precise matrix coordinate information, and use the robot combined with the variable pitch module to press the connection point between the tuning fork surface crystal chip and the wafer to be taken from the whole-board surface crystal chip, so as to realize the taking of the tuning fork surface crystal chip, and transfer it to the whole-board base, and place it on the glue point on the base to realize the automatic loading of the whole-board base.

[0016] The variable pitch module is used to control the robot to move between the matrix coordinates of the whole-board surface crystal wafer and the coordinates of the whole-board base, so as to realize the automatic taking and loading of the tuning fork surface crystal wafer.

[0017] Furthermore, the end of the manipulator is a suction nozzle to avoid damaging the tuning fork watch crystal.

[0018] Furthermore, when the robot automatically loads the wafer, the coordinates of the unqualified surface crystal wafers on the entire plate are obtained from the server and the unqualified surface crystal wafers are skipped when the surface crystal wafers are taken, so as to avoid taking defective surface crystal wafers.

[0019] Compared with the prior art, the method has the following beneficial effects: the whole plate of surface crystal wafers does not need to be coded one by one, so it is more convenient to carry out efficient appearance inspection and mark defective products. After marking the identity ID of the whole plate of surface crystal wafers on the whole plate of surface crystal wafers, the location information of the defective products is uploaded to the server for record at the same time. When in use, the system can obtain the identity ID of the whole plate of surface crystal wafers by scanning the code, and can timely know which position of the surface crystal wafer is a defective product, so that the robot arm for loading the wafer can avoid the defective position and not take the wafer at the defective position; Finally, due to the matrix arrangement of the surface crystal chips of the whole board, when the surface crystal chips are placed on the whole board base, precise positioning can be obtained based on the robot. At the same time, the whole board base also belongs to the matrix arrangement, and the position conversion relationship between the two is simple, which is conducive to reducing the amount of calculation in the automated production process and improving the efficiency of automated loading. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a schematic diagram of a hollow wafer; Figure 2 yes Figure 1 A magnified schematic diagram of the details in the middle; Figure 3 This is a schematic diagram of the entire panel surface crystal wafer; Figure 4 yes Figure 3 Detailed diagram at B in the middle; Figure 5It is a schematic diagram of the sandblasting cutting surface; Figure 6 This is a physical picture of the entire panel of surface crystal wafers; The names of the parts corresponding to the reference numbers in the accompanying drawings are: 1. Hollow wafer; 2. Surface wafer; 3. Connection point; 4. Electrode; 5. Pre-fracture line; 6. Hollow area. DETAILED DESCRIPTION

[0021] The following are only preferred specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a technician familiar with the technical field within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. The embodiments described below are only used to explain the present invention and cannot be interpreted as limitations on the present invention. The protection scope of the present invention should be based on the protection scope of the claims. The embodiments of the present invention are described in detail below. In order to facilitate the description of the present invention and simplify the description, the technical terms used in the specification of the present invention should be interpreted in a broad sense, including but not limited to conventional replacement schemes not mentioned in this application, and also including direct implementation methods and indirect implementation methods.

[0022] Example 1 Combination Figure 1 - Figure 6 This embodiment describes a surface crystal wafer processing method disclosed in this embodiment, including the following steps: S1, take a wafer; S2, cutting the wafer according to the outline of the surface crystal chip 2, such as Figure 1 and Figure 2 As shown, a hollow wafer 1 having a hollow pattern is obtained, wherein the hollow pattern is the position between adjacent surface crystal wafers 2, and each surface crystal wafer 2 and the hollow wafer 1 retain at least one uncut connection point 3; In S2, the cutting according to the contour of the surface crystal chip 2 is performed simultaneously from the upper and lower directions of the wafer using sandblasting + water ultrasonic method, which includes making a mask pattern of the surface crystal chip 2 on the wafer, and then cutting it using sandblasting + water ultrasonic method.

[0023] Due to the sandblasting cutting method, the cut groove is V-shaped, so the section obtained by cutting both sides at the same time is roughly an arc surface, and this arc surface will be plated with metal later to form a part of the electrode 4. The arc surface has a larger area than the plane, so this method increases the coating area of ​​the electrode 4. The larger the coating area, the smaller the impedance, so it is beneficial to improve the quality of the tuning fork watch crystal chip 2.

[0024] The cutting surface obtained by this processing method is free of burrs. Since the grinding fluid formed by sand and water can remove the burrs generated during the processing under the action of ultrasonic waves, the surface quality is improved. This method cuts from both sides at the same time, and the cutting efficiency is increased by 1 times.

[0025] S3, plating a metal layer on the surface crystal chip electrode area on the surface of the hollow wafer 1 to obtain a whole plate of surface crystal chips; The connection between the tuning fork watch crystal piece 2 and the wafer is pre-cut with a pre-fracture line 5, which can easily break the wafer when the robot automatically takes the wafer and puts it on the wafer later by cutting but not severing.

[0026] In S3, the metal layer is plated on the electrode area of ​​the surface crystal wafer on the surface of the hollow wafer 1, specifically by setting a whole plate mask tooling based on the entire wafer, applying it on the whole plate surface crystal wafer, and coating it by sputtering coating. Sputtering coating is a physical vapor deposition (PVD) technology that uses high-energy particles to bombard a silver target material so that metal atoms or atomic groups on the surface of the target material are sputtered out and deposited on the entire wafer to be plated to form a uniform metal film. The area covered by the mask is naturally protected, and the excess silver film is removed by removing the mask to form an electrode 4. The target material can be selected from gold or silver, so that a gold film or a silver film is obtained in the electrode 4 area, and the conductive effect is better. In actual operation, the bonding strength of the gold-plated layer or the silver-plated layer to the wafer is not very good. In order to increase the bonding strength, a layer of chromium will be plated as an intermediate layer before the gold-plated film or the silver-plated film, thereby increasing the bonding strength of the silver-plated film or the gold-plated film and the surface crystal wafer.

[0027] Example 2 Combination Figure 1 - Figure 6 This embodiment describes a surface crystal wafer processing method disclosed in this embodiment, including the following steps: S1, take a wafer; S2, cutting the wafer according to the outline of the surface crystal wafer 2 to obtain a hollow wafer 1 with a hollow pattern, wherein the hollow pattern is the position between adjacent surface crystal wafers 2, and each surface crystal wafer 2 and the hollow wafer 1 retain at least one uncut connection point 3; In S2, the cutting according to the contour of the surface crystal chip 2 is performed simultaneously from the upper and lower directions of the wafer using sandblasting + water ultrasonic method, which includes making a mask pattern of the surface crystal chip 2 on the wafer, and then cutting it using sandblasting + water ultrasonic method.

[0028] like Figure 5As shown, due to the sandblasting cutting method, the cut groove is V-shaped, so the cut surface obtained by cutting both sides at the same time is roughly an arc surface, and this arc surface will be plated with metal later to form a part of the electrode 4. The arc surface has a larger area than the plane, so this method increases the coating area of ​​the electrode 4. The larger the coating area, the smaller the impedance, so it is beneficial to improve the quality of the tuning fork watch crystal chip 2.

[0029] The cutting surface obtained by this processing method is free of burrs. The grinding fluid formed by sand and water removes the burrs generated during the processing under the action of ultrasonic waves, thereby improving the surface quality. This method cuts from both sides at the same time, and the cutting efficiency is increased by 1 times.

[0030] S3, such as Figure 3 and Figure 4 As shown, a metal layer is plated on the surface crystal chip electrode area on the surface of the hollow wafer 1 to obtain a whole plate of surface crystal chips, such as Figure 6 As shown; The connection between the tuning fork watch crystal piece 2 and the wafer is pre-cut with a pre-fracture line 5, which can easily break the wafer when the robot automatically takes the wafer and puts it on the wafer later by cutting but not severing.

[0031] The pre-fracture line 5 is realized by laser etching, which can better control the cutting depth.

[0032] In S3, the metal layer is plated on the surface crystal chip electrode area on the surface of the hollow wafer 1, specifically, by silver-plating the entire surface of the entire plate surface crystal chip, and then using laser burning to burn off the excess part between the electrodes 4 to obtain the electrodes 4.

[0033] Example 3 This embodiment is described in conjunction with Example 1 or 2. This embodiment discloses a method for processing a surface crystal oscillator. The method for processing a surface crystal oscillator using a whole surface crystal wafer obtained by processing according to the method described in Example 1 or 2 includes the following steps: The first step is to take the entire plate of surface crystal wafers, inspect the entire plate of surface crystal wafers, mark the ID of the entire plate of surface crystal wafers, mark the position information of the unqualified surface crystal wafer 2 in the entire plate of surface crystal wafers and enter it into the system; The second step is to fix the positions of the whole-board surface crystal chip and the whole-board base, read the IDs of the whole-board surface crystal chip and the whole-board base, so as to obtain their respective precise matrix coordinate information, and use the robot to press the connection point 3 between the tuning fork surface crystal chip 2 and the wafer to be taken from the whole-board surface crystal chip, so as to realize the taking of the tuning fork surface crystal chip 2, and transfer it to the whole-board base, and place it on the glue point on the base, so as to realize the automatic loading of the whole-board base.

[0034] The end of the manipulator is a suction nozzle. When the manipulator automatically loads the wafer, it obtains the coordinates of the unqualified surface crystal wafer 2 on the entire plate from the server and skips the unqualified surface crystal wafer 2 when taking the surface crystal wafer 2, so as to avoid taking the unqualified surface crystal wafer 2.

Claims

1. A surface crystal wafer processing method, characterized in that: The steps include: S1, take a wafer; S2, cutting the wafer according to the outline of the surface crystal chip (2) to obtain a hollow wafer (1) having a hollow pattern, wherein the hollow pattern is the position between adjacent surface crystal chips (2), and each surface crystal chip (2) and the hollow wafer (1) retain at least one uncut connection point (3); S3, coating a metal layer on the surface crystal chip electrode area on the surface of the hollow wafer (1) to obtain a whole plate of surface crystal chips.

2. A surface crystal wafer processing method according to claim 1, characterized in that: In S2, the cutting according to the outline of the surface crystal chip (2) is performed simultaneously from the upper and lower directions of the wafer using a sandblasting + water ultrasonic method, which includes making a mask pattern of the surface crystal chip (2) on the wafer, and then cutting it using a sandblasting + water ultrasonic method.

3. A surface crystal wafer processing method according to claim 1, characterized in that: A pre-breaking line (5) is pre-cut at the connection between the surface crystal chip (2) and the wafer.

4. A surface crystal wafer processing method according to claim 3, characterized in that: The pre-fracture line (5) is realized by laser etching.

5. A surface crystal wafer processing method according to claim 1, characterized in that: In S3, the metal layer is plated on the electrode area of ​​the surface crystal chip on the surface of the hollow wafer (1), specifically by setting a whole plate mask tooling based on the entire wafer, applying it on the whole plate surface crystal chip, and coating by sputtering coating.

6. A surface crystal wafer processing method according to claim 1, characterized in that: In S3, the metal layer is plated on the electrode area of ​​the surface crystal chip on the surface of the hollow wafer (1), specifically by coating the entire surface of the entire plate surface crystal chip, and then using laser burning to burn away the excess part between the electrodes (4) to obtain the electrode (4).

7. A method for processing a crystal oscillator, characterized in that: A method for processing a surface crystal oscillator based on a whole plate surface crystal wafer obtained by the method of any one of claims 1 to 6 comprises the following steps: The first step is to take the entire plate of surface crystal wafers, inspect the entire plate of surface crystal wafers, mark the ID of the entire plate of surface crystal wafers, mark the position information of the unqualified surface crystal wafers (2) in the entire plate of surface crystal wafers and enter it into the system; The second step is to fix the positions of the whole-board surface crystal chip and the whole-board base, read the ID of the whole-board surface crystal chip and the ID of the whole-board base, thereby obtaining their respective matrix coordinate information, and use a robot to press off the connection point (3) between the surface crystal chip (2) to be taken and the wafer from the whole-board surface crystal chip, so as to achieve the taking of the surface crystal chip (2), and transfer it to the whole-board base, and place it on the glue point on the base, so as to achieve automatic loading of the whole-board base.

8. The method for processing a watch crystal oscillator according to claim 7, characterized in that: The end of the manipulator is a suction nozzle.

9. The method for processing a watch crystal oscillator according to claim 7, characterized in that: When the robot automatically loads the wafer, it obtains the coordinates of the unqualified surface crystal wafer (2) on the entire plate of surface crystal wafers from the server and skips the unqualified surface crystal wafer (2) when taking the surface crystal wafer (2), thereby avoiding taking the unqualified surface crystal wafer (2).

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