Method for selective molybdenum deposition

Abstract

Methods and apparatus for selectively depositing a molybdenum layer on a substrate include contacting a substrate surface initially including a first portion and a second portion with a molybdenum precursor to selectively form a molybdenum layer on the second portion of the substrate surface, the first portion including amorphous silicon and the second portion including silicon and germanium.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to the selective deposition of metal layers on substrates. Background Art

[0002] In the manufacture of microelectronic devices, titanium silicide (TiSi) is used when forming both n-type metal oxide semiconductor (NMOS) and p-type metal oxide semiconductor (PMOS) structures on the same substrate. However, the inventors have noticed that as transistor dimensions shrink, the relatively large Schottky barrier height of the TiSi-PMOS structure results in undesirably high contact resistance.

[0003] The inventors thus provide improved methods and structures for processing substrates that address these and other problems. Summary of the invention

[0004] In an embodiment, a method of selectively depositing a molybdenum layer on a substrate having a first portion including an exposed silicon layer surface and a second portion including an exposed silicon germanium layer surface comprises contacting the substrate with a molybdenum precursor according to Formula I at a pressure from about 5 Torr to 400 Torr and at a temperature from about 50° C. to about 500° C. for a first period of time sufficient to selectively form the molybdenum layer on the second portion of the substrate surface, Formula I being as follows:

[0005] MoX5(I)

[0006] wherein each X is independently F, Cl, Br, or I.

[0007] In an embodiment, a method for processing a substrate includes a deposition cycle, comprising contacting a substrate surface with a molybdenum precursor for a first time period from about 0.1 seconds to about 10 seconds at a pressure from about 5 Torr to 400 Torr and at a temperature from about 50°C to about 500°C to form a molybdenum layer on the substrate surface, the substrate surface initially comprising a first portion substantially consisting of silicon, and a second portion comprising silicon and germanium, the molybdenum precursor comprising molybdenum pentachloride dispersed in molecular hydrogen; wherein the molybdenum layer is selectively deposited on the second portion of the substrate surface at a ratio greater than or equal to about 10:1 relative to the first portion of the substrate surface; and then contacting the substrate surface with molecular hydrogen without contacting the molybdenum precursor for a second time period, wherein the deposition cycle is repeated a number of times sufficient to form a final molybdenum layer having a thickness from about 2 nanometers to about 50 nanometers on the second portion of the substrate.

[0008] In an embodiment, a non-transitory computer readable medium has stored thereon instructions that, when executed, result in a method comprising selectively depositing a molybdenum layer on a substrate having an exposed silicon layer and an exposed silicon germanium layer, selectively depositing a molybdenum layer on a substrate having a first portion including a surface of the exposed silicon layer and a second portion including a surface of the exposed silicon germanium layer, comprising contacting the substrate with a molybdenum precursor according to Formula I at a pressure of from about 5 Torr to 400 Torr and at a temperature of from about 50° C. to about 500° C. for a first period of time sufficient to selectively form the molybdenum layer on the second portion of the substrate surface, wherein Formula I is as follows:

[0009] MoX5(I)

[0010] wherein each X is independently F, Cl, Br, or I.

[0011] Other and further embodiments of the disclosure are described below. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The embodiments of the present disclosure, briefly summarized above and discussed in more detail below, can be understood by reference to the illustrative embodiments of the present disclosure depicted in the accompanying drawings. However, the accompanying drawings illustrate only typical embodiments of the present disclosure and are therefore not to be considered limiting of the scope, as the present disclosure may admit to other equally effective embodiments.

[0013] Figure 1 is a flow chart of a method 100 according to an embodiment of the present disclosure.

[0014] Figure 2 is a block diagram illustrating a substrate having a first portion and a second portion according to an embodiment of the present disclosure.

[0015] Figure 3 It is a diagram according to an embodiment of the present disclosure Figure 2 A block diagram of a substrate in which a layer is selectively deposited on a second portion of the substrate.

[0016] Figure 4 It is a diagram according to an embodiment of the present disclosure Figure 3 Block diagram of a substrate in which another layer is selectively deposited on a first portion of the substrate.

[0017] Figure 5 is a block diagram illustrating a process of forming PMOS and NMOS sides of a substrate using an embodiment of a method according to the present disclosure.

[0018] Figure 6 A cluster tool suitable for performing methods to produce a layered substrate according to embodiments disclosed herein is depicted.

[0019] For ease of understanding, the same reference numerals have been used to identify common elements in the figures where possible. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. DETAILED DESCRIPTION

[0020] An embodiment of a method of selectively depositing a molybdenum layer on a substrate having a first portion comprising an exposed silicon layer surface and a second portion comprising an exposed silicon germanium layer surface, comprises contacting the substrate with a molybdenum precursor according to Formula I at a pressure from about 5 Torr to 400 Torr and at a temperature from about 50° C. to about 500° C. for a first period of time sufficient to selectively form the molybdenum layer on the second portion of the substrate surface, Formula I being as follows:

[0021] MoX5(I)

[0022] wherein each X is independently F, Cl, Br, or I. In an embodiment, the selective deposition of molybdenum on the second portion of the substrate surface relative to the first portion of the substrate surface is 100:1.

[0023] In an embodiment, the molybdenum precursor comprises molybdenum pentachloride. In an embodiment, the molybdenum precursor is molybdenum pentachloride.

[0024] In an embodiment, the surface of the second portion of the substrate consists essentially of a germanium silicon alloy. In an embodiment, the substrate surface is contacted with a molybdenum precursor at a pressure from about 5 torr to 350 torr. In an embodiment, the substrate surface is contacted with a molybdenum precursor at a temperature from about 300° C. to about 350° C. In an embodiment, the first time period is greater than or equal to about 0.1 seconds and less than or equal to about 10 seconds. In an embodiment, the substrate surface is contacted with a molybdenum precursor dispersed in molecular hydrogen. In an embodiment, the volume to volume ratio of the molybdenum precursor to molecular hydrogen is a ratio of molybdenum precursor to molecular hydrogen from about 1:500 to about 1:5000.

[0025] In an embodiment, the method further comprises a deposition cycle, the deposition cycle comprising contacting the substrate surface with a molybdenum precursor for a first time period, then contacting the substrate surface with molecular hydrogen and not contacting the molybdenum precursor for a second time period, wherein the deposition cycle is repeated a number of times sufficient to form a final molybdenum layer having a thickness from about 2 nanometers to about 50 nanometers on the second portion of the substrate. In an embodiment, the second time period is from about 0.1 seconds to about 30 seconds. In an embodiment, the method further comprises contacting the substrate surface with molecular hydrogen throughout the deposition cycle. In an embodiment, the method further comprises annealing the substrate after the final molybdenum layer has been formed. In an embodiment, the method further comprises pre-cleaning the substrate surface before contacting the substrate surface with a molybdenum precursor. In an embodiment, the method further comprises selectively depositing a titanium layer onto the first portion of the substrate surface relative to the second portion of the substrate surface. In an embodiment, substantially no titanium is deposited on the molybdenum layer deposited on the second portion of the substrate surface.

[0026] In an embodiment, a method for processing a substrate includes a deposition cycle, comprising contacting a substrate surface with a molybdenum precursor for a first time period from about 0.1 seconds to about 10 seconds at a pressure from about 5 Torr to 400 Torr and at a temperature from about 50°C to about 500°C to form a molybdenum layer on the substrate surface, the substrate surface initially comprising a first portion substantially consisting of silicon, and a second portion comprising silicon and germanium, the molybdenum precursor comprising molybdenum pentachloride dispersed in molecular hydrogen; wherein the molybdenum layer is selectively deposited on the second portion of the substrate surface at a ratio greater than or equal to about 10:1 relative to the first portion of the substrate surface; and then contacting the substrate surface with molecular hydrogen without contacting the molybdenum precursor for a second time period, wherein the deposition cycle is repeated a number of times sufficient to form a final molybdenum layer having a thickness from about 2 nanometers to about 50 nanometers on the second portion of the substrate.

[0027] In an embodiment, the method further comprises selectively depositing a titanium layer via chemical vapor deposition onto the first portion of the substrate surface relative to the second portion of the substrate surface at a ratio greater than or equal to about 2:1.

[0028] In an embodiment, a non-transitory computer readable medium has stored thereon instructions that, when executed, result in the performance of a method comprising selectively depositing a molybdenum layer on a substrate having a first portion comprising an exposed silicon layer surface and a second portion comprising an exposed silicon germanium layer surface, the method comprising contacting the substrate with a molybdenum precursor according to Formula I at a pressure from about 5 Torr to 400 Torr and at a temperature from about 50° C. to about 500° C. for a first period of time sufficient to selectively form the molybdenum layer on the second portion of the substrate surface, Formula I being as follows:

[0029] MoX5(I)

[0030] wherein each X is independently F, Cl, Br, or I.

[0031] Figure 1 is a flow chart of a method 100 for selectively depositing a molybdenum layer on a substrate having an exposed silicon layer and an exposed silicon germanium layer according to an embodiment of the present disclosure. In an embodiment, Figure 1 The method blocks may be executed by a device.

[0032] like Figure 1 As shown, method 100 includes contacting a substrate having a first portion and a second portion with a molybdenum precursor according to Formula I at a pressure from about 5 Torr to 400 Torr and at a temperature from about 50° C. to about 500° C. for a first period of time sufficient to selectively form a molybdenum layer on a second portion of the substrate surface, the first portion comprising an exposed silicon layer surface, and the second portion comprising an exposed germanium silicon layer surface, the Formula I being as follows:

[0033] MoX5(I)

[0034] wherein each X is independently F, Cl, Br, or I (block 102).

[0035] although Figure 1 A single block is shown, but in embodiments, method 100 may include, in addition to Figure 1 Other blocks other than block 102 depicted in FIG.

[0036] Figure 2 2 is a block diagram illustrating a processed substrate 200, wherein a base substrate layer 202 has an exposed surface of a first portion 204 having a total area initially present on the first portion 204 of the substrate surface, e.g., a length 214 of the first portion 204 of the substrate surface multiplied by a width 212 of the first portion 204 of the substrate surface. The substrate also includes an exposed surface of a second portion 206 having a total area initially present on the second portion 206 of the substrate surface, e.g., a length 210 of the second portion 206 of the substrate surface multiplied by a width 208 of the second portion 206 of the substrate surface.

[0037] In an embodiment, the surface of the first portion 204 comprises silicon. In an embodiment, the surface of the first portion 204 consists essentially of silicon. In an embodiment, the surface of the first portion 204 consists of silicon. In an embodiment, the surface of the first portion 204 comprises silicon. In an embodiment, the surface of the first portion 204 consists essentially of silicon. In an embodiment, the surface of the first portion 204 consists of silicon. In an embodiment, the surface of the second portion 206 of the substrate comprises germanium. In an embodiment, the surface of the second portion 206 of the substrate consists essentially of a germanium-silicon alloy. In an embodiment, the surface of the second portion 206 of the substrate consists of a germanium-silicon alloy. In an embodiment, the substrate surface initially comprises a first portion 204 and a second portion 206, the first portion comprising amorphous silicon and the second portion comprising silicon and germanium.

[0038] Figure 3 is a block diagram illustrating a processed substrate 300 according to an embodiment of the present disclosure, wherein Figure 2 to form a molybdenum layer 302 selectively deposited on the surface of the second portion 206 of the substrate. In an embodiment, the method of selectively depositing the molybdenum layer includes contacting the substrate surface (i.e., the first portion 204 and the second portion 206 of the substrate surface) with a molybdenum precursor according to Formula I at a pressure from about 5 Torr to 400 Torr and at a temperature from about 50° C. to about 500° C. for a first period of time sufficient to form the molybdenum layer 302 on the surface of the second portion 206 of the substrate, the formula I being as follows:

[0039] MoX5(I)

[0040] wherein each X is independently F, Cl, Br, or I.

[0041] In an embodiment, the molybdenum precursor comprises molybdenum pentachloride. In an embodiment, the molybdenum precursor consists essentially of or is molybdenum pentachloride.

[0042] In an embodiment, contacting the substrate surface with the molybdenum precursor is performed at a pressure of greater than or equal to about 5 Torr, or greater than or equal to about 10 Torr, or greater than or equal to about 20 Torr, or greater than or equal to about 25 Torr.

[0043] In embodiments, contacting the substrate surface with the molybdenum precursor is performed at a pressure of less than or equal to about 400 Torr, or less than or equal to about 350 Torr, or less than or equal to about 300 Torr.

[0044] In an embodiment, contacting the substrate surface with the molybdenum precursor is performed at a pressure of from about 5 Torr to 400 Torr.

[0045] In an embodiment, contacting the substrate surface with the molybdenum precursor is performed at a temperature greater than or equal to about 50°C, or greater than or equal to about 100°C, or greater than or equal to about 200°C, or greater than or equal to about 250°C.

[0046] In an embodiment, contacting the substrate surface with the molybdenum precursor is performed at a temperature of less than or equal to about 500°C, or less than or equal to about 400°C, or less than or equal to about 300°C.

[0047] In an embodiment, contacting the substrate surface with the molybdenum precursor is performed at a temperature from about 50°C to 500°C.

[0048] In an embodiment, the substrate surface is contacted with the molybdenum precursor in cycles, wherein the substrate surface is contacted with the molybdenum precursor for a first period of time. In an embodiment, the first period of time that the substrate surface is contacted with the molybdenum precursor is greater than or equal to about 0.1 seconds, or greater than or equal to about 1 second, or greater than or equal to about 2 seconds per cycle.

[0049] In embodiments, the first time period that the substrate surface is in contact with the molybdenum precursor is less than or equal to about 10 seconds, or less than or equal to about 7 seconds, or less than or equal to about 5 seconds per cycle.

[0050] In an embodiment, the first time period during which the substrate surface is in contact with the molybdenum precursor is greater than or equal to about 0.1 seconds and less than or equal to about 10 seconds per cycle.

[0051] In an embodiment, the substrate surface is contacted with a molybdenum precursor dispersed in a diluent comprising, or consisting essentially of, molecular hydrogen (H2). In an embodiment, the substrate surface is contacted with a molybdenum precursor dispersed in molecular hydrogen (H2).

[0052] In an embodiment, the volume to volume ratio of the molybdenum precursor to molecular hydrogen is less than or equal to about 1 part of the molybdenum precursor to 500 parts of molecular hydrogen (1:500), or less than or equal to about 1:700, or less than or equal to about 1:1000, and greater than or equal to about 1:5000.

[0053] In an embodiment, the volume to volume ratio of the molybdenum precursor to molecular hydrogen is from about 1 part of the molybdenum precursor to 500 parts of molecular hydrogen to 1 part of the molybdenum precursor to 5000 parts of molecular hydrogen (1:500 to 1:5000). In an embodiment, the contacting of the substrate surface with the molybdenum precursor is selective relative to the surface of the second portion of the substrate. In other words, the amount of molybdenum deposited on the second portion of the substrate surface per unit area of ​​the second portion of the substrate surface is greater than the amount of molybdenum deposited on the first portion of the substrate surface per unit area of ​​the first portion of the substrate surface.

[0054] In an embodiment, the amount of the molybdenum layer 302 formed on the second portion 206 of the substrate surface is divided by the total area of ​​the second portion 206 of the substrate surface that was initially present on the substrate surface (e.g., Figure 2 The length 210 of the second portion 206 of the substrate surface multiplied by the width 208 of the second portion 206 of the substrate surface) is greater than or equal to about 10 times, or greater than or equal to about 50 times, or greater than or equal to about 100 times, or greater than or equal to about 500 times the amount of molybdenum layer 302 (if any) formed on the first portion 204 of the substrate surface divided by the total area of ​​the first portion 204 initially present on the substrate surface (e.g., Figure 2 The length 214 of the first portion 204 of the substrate surface is shown multiplied by the width 212 of the first portion 204 of the substrate surface).

[0055] As in Figure 4 As depicted in , in embodiments, the method further comprises selectively depositing a titanium layer (402) onto a first portion (204) of a substrate surface. In embodiments, the method further comprises depositing a titanium layer (402) onto a substrate surface to form a substrate (400), wherein the amount of the titanium layer (402) formed on the first portion (204) of the substrate surface is divided by the amount of the titanium layer (402) initially deposited on the substrate surface (see Figure 2 ), the total area of ​​the first portion of the substrate surface present on the substrate surface being greater than or equal to about 2 times, or greater than or equal to about 5 times, or greater than or equal to about 10 times the amount of the titanium layer (if any) formed on the molybdenum layer (302) deposited on the second portion of the substrate surface (206) divided by the total area of ​​the second portion initially present on the substrate surface (e.g., Figure 2 The length 214 of the first portion 204 of the substrate surface is shown multiplied by the width 212 of the first portion 204 of the substrate. In an embodiment, substantially no titanium is deposited on the molybdenum layer (302) deposited on the second portion (306) of the substrate surface.

[0056] In an embodiment, the method includes a deposition cycle, wherein the selective deposition of the molybdenum layer is repeated as part of the cycle until a molybdenum layer of a desired thickness is formed. In an embodiment, the deposition cycle comprises contacting the substrate surface with a molybdenum precursor for a first period of time, then contacting the substrate surface with molecular hydrogen and without contacting the molybdenum precursor for a second period of time, wherein the cycle is repeated a number of times sufficient to form a final molybdenum layer on a second portion of the substrate.

[0057] In an embodiment, the final molybdenum layer on the second portion of the substrate has a thickness greater than or equal to about 2 nanometers, or greater than or equal to about 5 nanometers, or greater than or equal to about 10 nanometers.

[0058] In embodiments, the final molybdenum layer on the second portion of the substrate has a thickness of less than or equal to about 50 nanometers, or less than or equal to about 30 nanometers, or less than or equal to about 20 nanometers.

[0059] In an embodiment, the final molybdenum layer on the second portion of the substrate has a thickness from about 2 nanometers to about 50 nanometers.

[0060] In an embodiment, the second time period during which the substrate surface is in contact with the molecular hydrogen gas is greater than or equal to about 0.1 seconds, or greater than or equal to about 1 second, or greater than or equal to about 5 seconds per cycle.

[0061] In an embodiment, the second time period during which the substrate surface is contacted with the molecular hydrogen gas is less than or equal to about 30 seconds, or less than or equal to about 20 seconds, or less than or equal to about 10 seconds per cycle.

[0062] In an embodiment, the second period of time for which the substrate surface is in contact with the molecular hydrogen gas is from about 0.1 seconds to about 30 seconds.

[0063] In an embodiment, the method further comprises contacting the substrate surface with molecular hydrogen gas throughout the cycle.

[0064] As in Figure 5 As depicted in , in embodiments, the selective deposition of the molybdenum layer is part of a larger process. For example, in embodiments, the selective deposition of the molybdenum layer as described above can be part of a process 500 for forming NMOS and PMOS structures on a substrate. In embodiments, process 500 includes a junction pre-clean (block 502), followed by formation of an NMOS impurity layer (block 504), followed by selective deposition of a Mo layer (block 506) according to embodiments disclosed herein. In embodiments, after the selective deposition of the Mo layer (block 506), an optional annealing (block 508) and / or pre-cleaning (block 510) may occur. The selective deposition of the Mo layer (block 506) is followed by deposition of a Ti layer (block 512), for example, via CVD, followed by formation of a cap (block 514).

[0065] In an embodiment, the method further comprises annealing the substrate after the final molybdenum layer has been formed. In an embodiment, the substrate is annealed at a temperature of greater than or equal to about 300° C., or greater than or equal to about 400° C., or greater than or equal to about 500° C., or less than or equal to about 1000° C., for a period of greater than or equal to about 10 seconds, or greater than or equal to about 30 seconds, or greater than or equal to about 60 seconds, or greater than or equal to about 30 minutes.

[0066] In an embodiment, the method further comprises pre-cleaning the substrate surface prior to contacting the substrate surface with the molybdenum precursor. Suitable pre-cleaning of the substrate may include dry etching and / or wet chemical cleaning of the substrate.

[0067] The methods described herein can be performed in separate processing chambers, which can be configured in a stand-alone manner or provided as part of one or more cluster tools, such as described below with respect to Figure 6 600 (i.e., a cluster tool). In some embodiments, the methods described herein may be performed in a separate processing chamber provided as a stand-alone chamber or as part of a cluster tool. In embodiments, a cluster tool is configured to perform a method of processing a substrate as described herein.

[0068] Examples of integrated tool 600 include the . and Integrated Tools. However, the methods described herein may be practiced using other cluster tools having appropriate processing chambers coupled thereto, or in other appropriate processing chambers. For example, in some embodiments, the inventive methods discussed above may be advantageously performed in an integrated tool such that there is limited or no vacuum break during processing.

[0069] The methods described herein can be performed in separate processing chambers that can be configured in a stand-alone manner or provided as part of a cluster tool, such as described below with respect to Figure 6 An integrated tool 600 (i.e., a cluster tool) is described. An advantage of using the integrated tool 600 is that there is no vacuum break between chambers, and thus, there is no need to degas and pre-clean the substrate prior to processing in the chamber. For example, in some embodiments, the methods discussed above may be advantageously performed in an integrated tool such that there is limited or no vacuum break between processes, thereby limiting or preventing contamination of the substrate, such as oxidation and the like. The integrated tool 600 includes a vacuum sealed processing platform 601, a factory interface 604, and a system controller 602. The processing platform 601 includes a plurality of processing chambers, such as 614A, 614B, 614C, 614D, 614E, and 614F, operatively coupled to a vacuum substrate transfer chamber (transfer chambers 603A, 603B). The factory interface 604 communicates with the substrate via one or more load lock chambers (two load lock chambers, such as Figure 6 606A and 606B) are shown operatively coupled to the transfer chamber 603A.

[0070] In some embodiments, the factory interface 604 includes at least one docking station 607 and at least one factory interface robot 638 to facilitate the transfer of semiconductor substrates. The docking station 607 is configured to receive one or more front opening unified pods (FOUPs). Four FOUPs (such as 605A, 605B, 605C, and 605D) are located at Figure 5 606A and 606B. The factory interface robot 638 is configured to transfer substrates from the factory interface 604 to the processing platform 601 through the load lock chambers (such as 606A and 606B). Each of the load lock chambers 606A and 606B has a first port coupled to the factory interface 604 and a second port coupled to the transfer chamber 603A. The load lock chambers 606A and 606B are coupled to a pressure control system (not shown) that evacuates and exhausts the load lock chambers 606A and 606B to facilitate transferring substrates between the vacuum environment of the transfer chamber 603A and the substantially ambient (e.g., atmospheric) environment of the factory interface 604. The transfer chambers 603A, 603B have vacuum robots 642A, 642B disposed in the respective transfer chambers 603A, 603B. The vacuum robot 642A can transfer substrates 621 between the load lock chambers 606A, 606B, the processing chambers 614A and 614F, and the cooling station 640 or the pre-cleaning station 641. The vacuum robot 642B can transfer substrates 621 between the cooling station 640 or the pre-cleaning station 641 and the processing chambers 614B, 614C, 614D, and 614E.

[0071] In some embodiments, processing chambers 614A, 614B, 614C, 614D, 614E, and 614F are coupled to transfer chambers 603A, 603B. Processing chambers 614A, 614B, 614C, 614D, 614E, and 614F may include, for example, atomic layer deposition processing chambers, physical vapor deposition processing chambers, chemical vapor deposition chambers, annealing chambers, or the like. The chambers may include any chamber suitable for performing all or part of the methods described herein, as discussed above, in one or more ALD deposition chambers, non-conformal layer PVD deposition chambers, and CVD deposition chambers, and the like. In some embodiments, one or more optional service chambers (illustrated as 616A and 616B) may be coupled to transfer chamber 603A. Service chambers 616A and 616B may be configured to perform other substrate processes, such as degassing, orientation, substrate metrology, cooling, and the like.

[0072] The system controller 602 controls the operation of the tool 600 using direct control of the processing chambers 614A, 614B, 614C, 614D, 614E, and 614F, or alternatively controls the operation of the tool 600 by controlling a computer (or controller) associated with the processing chambers 614A, 614B, 614C, 614D, 614E, and 614F and the tool 600. In operation, the system controller 602 enables data collection and feedback from the corresponding chambers and systems to optimize the performance of the tool 600. The system controller 602 generally includes a central processing unit (CPU) 630, a memory 634, and support circuits 632. The CPU 630 can be any form of general-purpose computer processor that can be used in an industrial environment. The support circuits 632 are coupled to the CPU 630 in a conventional manner and can include cache, clock circuits, input / output subsystems, power supplies, and the like. Software programs (such as the methods described above) may be stored in memory 634 and, when executed by CPU 630, transform CPU 630 into a special purpose computer (system controller) 602. Software programs may also be stored and / or executed by a second controller (not shown) that is remote from tool 600.

[0073] Embodiments according to the present principles may be implemented in hardware, firmware, software, or any combination thereof. Embodiments may also be implemented as instructions stored using one or more computer-readable media, which instructions may be read and executed by one or more processors. A computer-readable medium may include any mechanism for storing or transmitting information in a machine-readable form (e.g., a computing platform or a "virtual machine" running on one or more computing platforms). For example, a computer-readable medium may include any suitable form of volatile or non-volatile memory. In some embodiments, a computer-readable medium may include a non-transitory computer-readable medium.

[0074] Embodiments according to the present disclosure include:

[0075] E1. A method for selectively depositing a molybdenum layer on a substrate, the substrate having a first portion including an exposed silicon layer surface and a second portion including an exposed germanium silicon layer surface, comprising:

[0076] The substrate is contacted with a molybdenum precursor according to Formula I, which is as follows, at a pressure from about 5 Torr to 400 Torr and at a temperature from about 50° C. to about 500° C. for a first period of time sufficient to selectively form a molybdenum layer on a second portion of the substrate surface:

[0077] MoX5(I)

[0078] wherein each X is independently F, Cl, Br, or I.

[0079] E2. A method according to embodiment E1, wherein the selective deposition of molybdenum on the second portion of the substrate surface relative to the first portion of the substrate surface is 100:1.

[0080] E3. A method according to one or more of embodiments E1 to E2, wherein the molybdenum precursor comprises molybdenum pentachloride.

[0081] E4. A method according to one or more of embodiments E1 to E3, wherein the molybdenum precursor is molybdenum pentachloride.

[0082] E5. The method of one or more of embodiments E1 to E4, wherein the surface of the second portion of the substrate consists essentially of a germanium-silicon alloy.

[0083] E6. A method according to one or more of embodiments E1 to E5, wherein the substrate surface is contacted with the molybdenum precursor at a pressure from about 5 Torr to 350 Torr.

[0084] E7. A method according to one or more of embodiments E1 to E6, wherein the substrate surface is contacted with the molybdenum precursor at a temperature from about 300°C to about 350°C.

[0085] E8. A method according to one or more of embodiments E1 to E7, wherein the first time period is greater than or equal to about 0.1 seconds and less than or equal to about 10 seconds.

[0086] E9. A method according to one or more of embodiments E1 to E8, wherein the substrate surface is contacted with a molybdenum precursor dispersed in molecular hydrogen.

[0087] E10. A method according to embodiment E9, wherein the volume to volume ratio of the molybdenum precursor to molecular hydrogen is a ratio of the molybdenum precursor to molecular hydrogen from about 1:500 to about 1:5000.

[0088] E11. The method according to one or more of embodiments E1 to E10, further comprising:

[0089] A deposition cycle comprises contacting a substrate surface with a molybdenum precursor for a first time period, then contacting the substrate surface with molecular hydrogen and without contact with the molybdenum precursor for a second time period, wherein the deposition cycle is repeated a number of times sufficient to form a final molybdenum layer having a thickness from about 2 nanometers to about 50 nanometers on a second portion of the substrate.

[0090] E12. A method according to one or more of embodiments E1 to E11, wherein the second time period is from about 0.1 seconds to about 30 seconds.

[0091] E13. The method according to one or more of embodiments E1 to E12, further comprising contacting the substrate surface with molecular hydrogen throughout the deposition cycle.

[0092] E14. The method according to one or more of embodiments E1 to E13, further comprising annealing the substrate after the final molybdenum layer has been formed.

[0093] E15. The method according to one or more of embodiments E1 to E14, further comprising pre-cleaning the substrate surface before contacting the substrate surface with the molybdenum precursor.

[0094] E16. The method according to one or more of embodiments E1 to E15, further comprising selectively depositing the titanium layer onto a first portion of the substrate surface relative to a second portion of the substrate surface.

[0095] E17. A method according to one or more of embodiments E1 to E16, wherein substantially no titanium is deposited on the molybdenum layer deposited on the second portion of the substrate surface.

[0096] E18. The method according to one or more of embodiments E1 to E17, comprising:

[0097] a deposition cycle comprising contacting a substrate surface with a molybdenum precursor comprising molybdenum pentachloride dispersed in molecular hydrogen at a pressure of from about 5 torr to 400 torr and at a temperature of from about 50° C. to about 500° C. for a first period of time from about 0.1 seconds to about 10 seconds to form a molybdenum layer on the substrate surface, the substrate surface initially comprising a first portion consisting essentially of silicon and a second portion comprising silicon and germanium;

[0098] wherein the molybdenum layer is selectively deposited on a second portion of the substrate surface relative to the first portion of the substrate surface at a ratio greater than or equal to about 10:1; and

[0099] The substrate surface is then exposed to molecular hydrogen and not exposed to a molybdenum precursor for a second period of time,

[0100] Wherein the deposition cycle is repeated a number sufficient to form a final molybdenum layer having a thickness from about 2 nanometers to about 50 nanometers on the second portion of the substrate.

[0101] E19. A method for processing a substrate, comprising:

[0102] a deposition cycle comprising contacting a substrate surface with a molybdenum precursor comprising molybdenum pentachloride dispersed in molecular hydrogen at a pressure of from about 5 torr to 400 torr and at a temperature of from about 50° C. to about 500° C. for a first period of time from about 0.1 seconds to about 10 seconds to form a molybdenum layer on the substrate surface, the substrate surface initially comprising a first portion consisting essentially of silicon and a second portion comprising silicon and germanium;

[0103] wherein the molybdenum layer is selectively deposited on a second portion of the substrate surface relative to the first portion of the substrate surface at a ratio greater than or equal to about 10:1; and

[0104] The substrate surface is then exposed to molecular hydrogen and not exposed to a molybdenum precursor for a second period of time,

[0105] Wherein the deposition cycle is repeated a number sufficient to form a final molybdenum layer having a thickness from about 2 nanometers to about 50 nanometers on the second portion of the substrate.

[0106] E20. The method according to one or more of embodiments E18 to E19 further comprises selectively depositing a titanium layer onto a first portion of the substrate surface relative to a second portion of the substrate surface via chemical vapor deposition at a ratio greater than or equal to about 2:1.

[0107] E21. A non-transitory computer-readable medium having stored thereon instructions which, when executed, cause execution of the method of one or more of embodiments E1 to E20.

[0108] E22. A non-transitory computer-readable medium having stored thereon instructions which, when executed, result in the execution of a method comprising:

[0109] A molybdenum layer is selectively deposited on a substrate having a first portion including an exposed surface of an amorphous silicon layer and a second portion including an exposed surface of a germanium silicon layer, comprising:

[0110] The substrate is contacted with a molybdenum precursor according to Formula I at a pressure of from about 5 to 400 torr and at a temperature of from about 50° C. to about 500° C. for a first period of time sufficient to selectively form a molybdenum layer on a second portion of the surface of the substrate, Formula I:

[0111] MoX5(I)

[0112] wherein each X is independently F, Cl, Br, or I.

[0113] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof.

Claims

1. A method for selectively depositing a molybdenum layer on a substrate, wherein the substrate has a first portion including an exposed silicon layer surface and a second portion including an exposed germanium silicon layer surface, comprising the following steps: The substrate is contacted with a molybdenum precursor according to Formula I at a pressure of from about 5 to 400 torr and at a temperature of from about 50° C. to about 500° C. for a first period of time sufficient to selectively form the molybdenum layer on the second portion of the substrate surface, wherein Formula I is as follows: MoX5(I) wherein each X is independently F, Cl, Br, or I.

2. The method of claim 1, wherein the selective deposition of the molybdenum on the second portion of the substrate surface relative to the first portion of the substrate surface is 100:

1.

3. The method of claim 1, wherein the molybdenum precursor comprises molybdenum pentachloride.

4. The method of claim 1, wherein the molybdenum precursor is molybdenum pentachloride.

5. The method of claim 1, wherein the surface of the second portion of the substrate consists essentially of a germanium-silicon alloy.

6. The method of claim 1, wherein the substrate surface is contacted with the molybdenum precursor at a pressure from about 5 Torr to 350 Torr.

7. The method of claim 1, wherein the substrate surface is contacted with the molybdenum precursor at a temperature from about 300°C to about 350°C.

8. The method of claim 1, wherein the first time period is greater than or equal to approximately 0.1 seconds and less than or equal to approximately 10 seconds.

9. The method of claim 1, wherein the substrate surface is contacted with the molybdenum precursor dispersed in molecular hydrogen.

10. The method of claim 9, wherein the volume to volume ratio of the molybdenum precursor to the molecular hydrogen is a ratio of molybdenum precursor to molecular hydrogen from about 1:500 to about 1:5000.

11. The method according to any one of claims 1 to 10, further comprising the following steps: A deposition cycle comprising the steps of contacting the substrate surface with the molybdenum precursor for a first time period, followed by contacting the substrate surface with molecular hydrogen and without contact with the molybdenum precursor for a second time period, wherein the deposition cycle is repeated a number of times sufficient to form a final molybdenum layer having a thickness from about 2 nanometers to about 50 nanometers on the second portion of the substrate.

12. The method of claim 11, wherein the second time period is from about 0.1 seconds to about 30 seconds.

13. The method of claim 11, further comprising the step of contacting the substrate surface with the molecular hydrogen throughout the deposition cycle.

14. The method of claim 11, further comprising the step of annealing the substrate after the final molybdenum layer has been formed.

15. The method of any one of claims 1 to 10, further comprising the step of pre-cleaning the substrate surface prior to the step of contacting the substrate surface with the molybdenum precursor.

16. The method of any one of claims 1 to 10, further comprising the step of selectively depositing a titanium layer onto the first portion of the substrate surface relative to the second portion of the substrate surface.

17. The method of claim 16, wherein substantially no titanium is deposited on the molybdenum layer deposited on the second portion of the substrate surface.

18. The method according to any one of claims 1 to 10, further comprising the following steps: a deposition cycle comprising contacting a substrate surface with a molybdenum precursor comprising molybdenum pentachloride dispersed in molecular hydrogen at a pressure of from about 5 torr to 400 torr and at a temperature of from about 50° C. to about 500° C. for a first period of time from about 0.1 seconds to about 10 seconds to form a molybdenum layer on the substrate surface, the substrate surface initially comprising a first portion consisting essentially of silicon and a second portion comprising silicon and germanium; wherein the molybdenum layer is selectively deposited on the second portion of the substrate surface relative to the first portion of the substrate surface at a ratio greater than or equal to about 10:1; and then contacting the substrate surface with molecular hydrogen and without contacting the molybdenum precursor for a second period of time, Wherein the deposition cycle is repeated a number of times sufficient to form a final molybdenum layer having a thickness from about 2 nanometers to about 50 nanometers on the second portion of the substrate.

19. The method of claim 18, further comprising the step of selectively depositing a titanium layer onto the first portion of the substrate surface relative to the second portion of the substrate surface via chemical vapor deposition at a ratio greater than or equal to about 2:

1.

20. A non-transitory computer readable medium having stored thereon instructions which, when executed, result in the performance of a method as claimed in any one of claims 1 to 10.

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