Nozzle gas inlet mixer

Abstract

A showerhead for a substrate processing chamber includes a head configured to receive a gas mixture, and a stem coupled to the head. A first plenum chamber is defined within the head and a gas mixture flows into the plenum chamber and from the plenum chamber into the substrate processing chamber via an aperture disposed in a lower surface of the head. The stem portion is configured to supply a gas mixture to the head portion through the central hole. A mixing chamber is disposed on the stem. The mixing chamber is configured to receive a first gas supplied by the first mixer inlet and a second gas supplied by the second mixer inlet, mix the first gas and the second gas into a gas mixture, and direct the gas mixture to an upper end of the central bore for downward supply into the head.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of U.S. Provisional Application No. 63 / 413,841, filed on October 6, 2022. The entire disclosure of the above-referenced application is incorporated herein by reference. Technical Field

[0002] The present disclosure relates to showerhead inlet designs for substrate processing systems. Background Art

[0003] The background description provided here is for the purpose of generally presenting the background of the present disclosure. The work of the currently designated inventors within the scope described in this background section and aspects of the specification that were not determined to be prior art at the time of filing the application are neither explicitly nor implicitly admitted to be prior art against the present disclosure.

[0004] Substrate processing tools typically include multiple stations to perform deposition, etching, and other processes on a substrate (e.g., a semiconductor wafer). Examples of processes that can be performed on a substrate include a chemical vapor deposition (CVD) process, a chemically enhanced plasma vapor deposition (CEPVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, a sputtering physical vapor deposition (PVD) process, an atomic layer deposition (ALD), and a plasma enhanced ALD (PEALD). Additional examples of processes that can be performed on a substrate include etching (e.g., chemical etching, plasma etching, reactive ion etching, etc.) and cleaning processes.

[0005] During processing, a substrate is disposed in a processing chamber on a substrate support (e.g., an electrostatic chuck (ESC) or a pedestal). A processing gas is introduced into the processing chamber, and, in some examples, a plasma is ignited. The processing gas is introduced using a gas distribution device (e.g., a showerhead). Summary of the invention

[0006] A showerhead for a substrate processing chamber comprises: a head configured to receive at least a first gas mixture and a rod coupled to the head. At least a first plenum is defined in the head, and the first gas mixture flows into the first plenum, and flows from the first plenum to a deposition area of ​​the substrate processing chamber via a plurality of holes arranged in a lower surface of the head. The rod is configured to supply the first gas mixture to the head through a central hole defined in the rod. A mixing chamber is arranged on the rod. The mixing chamber is configured to receive a first gas supplied by a first mixer inlet and a second gas supplied by a second mixer inlet, mix the first gas and the second gas into the first gas mixture, and guide the first gas mixture into the upper end of the central hole to be supplied downwardly to the head.

[0007] In other features, the mixing chamber is arranged at the upper end of the stem portion around the central hole, and the mixing chamber is configured to direct the first gas mixture upward within the mixing chamber and into the upper end of the central hole. The spray head also includes a plurality of mixer outlets extending upward from the upper end of the mixing chamber and toward the upper end of the central hole. The spray head also includes a valve assembly, which is arranged above the mixing chamber. The valve assembly is configured to selectively allow fluid communication between the mixer outlet and the upper end of the central hole.

[0008] In other features, the mixing chamber is configured to receive a third gas supplied by a third mixer inlet and mix the third gas with the first gas and the second gas into the first gas mixture. The first mixer inlet, the second mixer inlet, and the third mixer inlet are arranged at an angle tangent to an outer surface of the mixing chamber. The first mixer inlet, the second mixer inlet, and the third mixer inlet are arranged so that the first gas, the second gas, and the third gas are supplied to the mixing chamber at an angle tangent to an inner surface of the mixing chamber.

[0009] In other features, the bottom surface of the mixing chamber is configured to direct the first gas mixture upward within the mixing chamber. The bottom surface is curved. The showerhead also includes a first inlet, the first inlet being arranged to supply a second gas mixture to the stem. The first inlet is coupled to a first mixing tube, the first mixing tube being configured to: receive at least the first gas and the second gas, mix the first gas and the second gas into the second gas mixture, and supply the second gas mixture to a middle region of the head via the first inlet and the stem.

[0010] In other features, the showerhead further comprises a second inlet, the second inlet being arranged to supply a third gas mixture to the stem portion. The second inlet is coupled to a second mixing tube, the second mixing tube being configured to: receive at least the first gas and the second gas, mix the first gas and the second gas into the third gas mixture, and supply the third gas mixture to an edge region of the head via the second inlet and the stem portion. Each of the first mixing tube and the second mixing tube comprises at least one of: a mixing structure disposed within an interior volume; a plurality of protruding features extending radially inward from an interior surface into the interior volume; and one or more spiral grooves defined in the interior surface.

[0011] In other features, the showerhead includes a panel having a central region, a middle region radially outward of the central region, and an edge region radially outward of the middle region. The panel includes a plurality of first holes distributed throughout the central region and the middle region, and a plurality of second holes distributed throughout the edge region. The showerhead also includes an intermediate plate body and a back plate. The intermediate plate body is disposed between the panel and the back plate. The panel is configured to receive the first gas mixture supplied to the first plenum, and to supply the first gas mixture to the deposition region via the plurality of first holes.

[0012] In other features, the showerhead further comprises a first inlet and a second inlet, the first inlet being arranged to supply a second gas mixture to the stem, the second inlet being arranged to supply a third gas mixture to the stem. The panel comprises an intermediate region radially outward of the central region. The panel is configured to receive the second gas mixture in the intermediate region via the first inlet of the stem and the intermediate inlet of the head. The panel comprises an edge region radially outward of the intermediate region. The panel is configured to receive the third gas mixture in the edge region via the second inlet of the stem and the edge inlet of the head.

[0013] A showerhead for a substrate processing chamber includes a head defining a central region, a middle region radially outward of the central region, and an edge region radially outward of the middle region, the head being configured to receive a first gas mixture in the central region, a second gas mixture in the middle region, and a third gas mixture in the edge region. The showerhead includes a stem coupled to the head. The stem is configured to supply the first gas mixture to the central region of the head through a central hole defined in the stem, supply the second gas mixture to the middle region of the head through a middle inlet, and supply the third gas mixture to the edge region of the head through an edge inlet. A mixing chamber is arranged on the stem. The mixing chamber is configured to receive a first gas supplied by a first mixer inlet, a second gas supplied by a second mixer inlet, and a third gas supplied by a third mixer inlet; mix the first gas, the second gas, and the third gas into the first gas mixture; and guide the first gas mixture into an upper end of the central hole to be supplied downwardly to the central region of the head.

[0014] In other features, the nozzle also includes: a first inlet, which is arranged to supply the second gas mixture to the rod portion, the first inlet is coupled to a first mixing tube, the first mixing tube is configured to receive the first gas, the second gas and the third gas, and mix the first gas, the second gas and the third gas into the second gas mixture; and a second inlet, which is arranged to supply the third gas mixture to the rod portion, the second inlet is coupled to a second mixing tube, the second mixing tube is configured to receive the first gas, the second gas and the third gas, and mix the first gas, the second gas and the third gas into the third gas mixture.

[0015] In other features, the first mixer inlet, the second mixer inlet, and the third mixer inlet are arranged so that the first gas, the second gas, and the third gas are supplied into the mixing chamber at an angle approximately tangential to an inner surface of the mixing chamber. A system includes the showerhead and a substrate processing chamber configured to perform bulk deposition on a substrate. The system also includes a controller configured to control a gas delivery system to independently supply the first gas, the second gas, and the third gas to each of the mixing chamber, the first mixing tube, and the second mixing tube.

[0016] Further scope of applicability of the present disclosure will become apparent from the detailed description, claims and drawings.The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The present disclosure will be more fully understood from the detailed description and accompanying drawings, in which:

[0018] Figure 1 is a functional block diagram of a substrate processing system according to the present disclosure, including an exemplary carrier ring;

[0019] Figure 2 An exemplary processing chamber, showerhead, and substrate support according to the present disclosure are shown;

[0020] Figure 3 An exemplary spray head including a mixer assembly according to the present disclosure is shown;

[0021] Figure 4A is a plan view of an exemplary mixing chamber according to the present disclosure;

[0022] Figure 4B is a side view of an exemplary mixing chamber according to the present invention;

[0023] Figure 4C and Figure 4D Depict in Figure 4A and 4B The gas flow in the mixing chamber;

[0024] Figure 5A and 5B is a plan view of an exemplary mixing tube according to the present disclosure; and

[0025] Figure 5C is a side view of an exemplary mixing tube according to the present disclosure.

[0026] Among the drawings, reference numerals may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION

[0027] A substrate processing tool includes one or more processing modules or chambers. For example, a multi-station module (e.g., a quad station module (QSM)) includes multiple stations in which deposition, etching, and other processes are performed on a substrate. Different processes may be implemented in each station. In contrast, a single station module includes only a single station.

[0028] In some examples, a nucleation process (e.g., an atomic layer deposition (ALD) nucleation step) is performed in a first station of a multi-station module, while a bulk fill / deposition step is performed in other stations of the multi-station module. The optimal chamber size and geometry and / or process parameters may be different for each step. For example, the optimal chamber pressure and temperature for the nucleation step may be lower than the optimal chamber pressure and temperature for the bulk deposition step. However, because the stations in a multi-station module share the same process chamber, the process chamber conditions may not be optimal for the nucleation or bulk deposition steps.

[0029] A processing module according to the present disclosure includes components optimized for the bulk deposition step of an ALD process. For example, the processing module is a single-station module that is configured to perform the bulk deposition step separately from the nucleation step. The nucleation step can be performed in a different module or tool before being transferred to the processing module. Thus, the nucleation and bulk deposition steps can be performed under their respective optimal processing conditions. Although described with respect to bulk deposition, the principles of the present disclosure may also be applied to other types of deposition.

[0030] The processing module includes a showerhead configured to perform bulk deposition. The showerhead includes a mixer assembly configured to direct gas within the showerhead into a mixing chamber and then downwardly through the showerhead and into the processing chamber.

[0031] Reference now Figure 1 , shows an example of a substrate processing system 100 including a showerhead 104 according to the present disclosure. The showerhead 104 is disposed within an upper surface or portion of a processing chamber 108. During processing, a substrate 112 is disposed on a substrate support 116 (e.g., a pedestal for CVD and / or ALD deposition). For example, the bulk deposition of an ALD process is performed on the substrate 112.

[0032] The gas delivery system 120 includes gas sources 122-1, 122-2, ..., and 122-N (collectively referred to as gas sources 122), which are connected to valves 124-1, 124-2, ..., and 124-N (collectively referred to as valves 124) and mass flow controllers 126-1, 126-2, ..., and 126-N (collectively referred to as MFCs 126). The MFCs 126 control the flow of gas from the gas sources 122 to a manifold 128 where the gases are mixed. The output of the manifold 128 is supplied to a manifold 136. The output of the manifold 136 is input to the showerhead 104 (e.g., a multi-injection port, multi-zone showerhead, as described in more detail below). Although manifolds 128 and 136 are shown, a single manifold may be used.

[0033] In some examples, a resistive heater 144 can be used to control the temperature of the substrate support 116. The substrate support 116 can include a coolant channel 146. A cooling fluid is supplied to the coolant channel 146 from a fluid reservoir 148 and a pump 150. Pressure sensors 152, 154 can be disposed in the manifold 128 or the manifold 136, respectively, to measure pressure. A valve 156 and a pump 158 can be used to evacuate reactants from the process chamber 108 and / or control the pressure within the process chamber 108.

[0034] The controller 160 includes a dosage controller 162 that controls the dosage provided by the showerhead 104. The controller 160 also controls the delivery of gases from the gas delivery system 120. The controller 160 controls the pressure in the process chamber and / or the evacuation of reactants using the valve 156 and the pump 158. The controller 160 controls the temperature of the substrate support 116 and the substrate 112 based on temperature feedback (e.g., from a sensor in the substrate support (not shown) and / or a sensor measuring the coolant temperature (not shown)).

[0035] Although described as being used to perform a deposition process, the substrate processing system 100 can be configured to perform an etching process. In some examples, the substrate processing system 100 can be configured to perform etching on the substrate 112 within the same processing chamber 108 as the deposition process. Thus, the substrate processing system 100 can include an RF generation system 164 configured to generate and provide RF power (e.g., as a voltage source, current source, etc.) to one of a lower electrode (e.g., a bottom plate of the substrate support 116, as shown) and an upper electrode (e.g., showerhead 104). The other of the lower electrode and the upper electrode can be DC grounded, AC grounded, or floating.

[0036] By way of example only, the RF generation system 164 may include an RF generator 166 configured to generate an RF voltage supplied by a matching and distribution network 168 to generate a plasma within the processing chamber 108 to etch the substrate 112. In other examples, the plasma may be generated inductively or remotely. Although, for example purposes, the RF generation system 164 corresponds to a capacitively coupled plasma (CCP) system, the principles of the present disclosure may also be implemented in other suitable systems, such as, by way of example only, a transformer coupled plasma (TCP) system, a CCP cathode system, a remote microwave plasma generation and delivery system, etc.

[0037] The substrate support 116 includes a carry ring 170. In some examples, the inner edge of the carry ring 170 overlaps the outer edge of the substrate 112. In some examples, the substrate support 116 is lowered to transfer the substrate 112 into the processing chamber 108. For example, the substrate 112 is transferred onto lift pins (not shown) that are exposed when the substrate support 116 is lowered. Next, the substrate support 116 is raised to engage the substrate 112 and the carry ring 170.

[0038] Figure 2 An exemplary process chamber 200 including a showerhead 204 according to the present disclosure is shown. In one example, the process chamber 200 corresponds to a station of a single station module. The process chamber 200 is configured to perform a bulk deposition step on a substrate 208 after a nucleation step, which is performed in a different process chamber. For example, after the nucleation step, the substrate 208 is transferred to a substrate support (e.g., a pedestal) 212 within the process chamber 200.

[0039] In one example, when the pedestal 212 is in the lowered position, the substrate 208 is transferred through a slot or other opening 214 in the sidewall of the processing chamber 200. When the pedestal 212 is in the lowered position, the lift pins 216 extend above the upper surface of the pedestal 212, and the substrate 208 is placed onto the lift pins 216 (e.g., using a transfer robot). Next, the pedestal 212 is raised to lift and support the substrate 208 in the raised position, such as Figure 2 shown.

[0040] Each of the process chamber 200, the showerhead 204, and the pedestal 212 is configured to minimize azimuthal asymmetry in a deposition region 218 defined between the showerhead 204 and the pedestal 212. For example, the deposition region 218 is a symmetrical annular volume defined between a substrate-facing lower faceplate 220 of the showerhead 204, an annular inner surface 222 of the process chamber 200, and the pedestal 212. In addition, the gap between the faceplate 220 and the pedestal 212 is minimized to maintain uniformity of process gas flow and distribution within the deposition region 218.

[0041] The showerhead 204 is composed of a base or head 226 and a stem 228. The stem 228 extends through the upper wall (e.g., cover 230) of the processing chamber 200 to connect to the head 226. For example, the head 226 includes a face plate 220, a back plate 232, and an intermediate plate 234 disposed between the face plate 220 and the back plate 232. In this example, the face plate 220 serves as the upper surface of the processing chamber 200.

[0042] The face plate 220, the back plate 232, and the intermediate plate body 234 define at least three flow paths and corresponding plenums 238 within the head 226 to provide radial adjustability and process configurability. For example, one or more plenums 238-1 are defined in the upper surface of the face plate 220, the plenum 238-2 is defined in the upper surface of the intermediate plate body 234, the plenum 238-3 is defined in the upper surface of the back plate 232, and the plenum 238-4 is defined in the face plate 220 radially outward of the plenum 238-1. The plenums 238-1, 238-2, 238-3, and 238-4 are collectively referred to as plenums 238.

[0043] As shown, a first flow path (shown as a solid line / arrow) 240 supplies gas through the stem 228 and into a corresponding plenum defined in a central region 242 of the panel 220. A second flow path (shown as a dotted line / arrow) 244 supplies gas through the stem 228 and into a corresponding plenum defined in a radial or middle region 246 of the panel 220. A third flow path (shown as a dashed line / arrow) 248 supplies gas through the stem 228 and into a corresponding plenum defined in an outer or edge region 250 of the panel 220. By way of example only, the first flow path 240 is routed through the rod portion 228 to supply gas to the center region 242 through the center inlet 252-1; the second flow path 244 is routed through the back plate 232 and the middle plate body 234 to supply gas to the middle region 246 through the middle inlet 252-2; and the third flow path 248 is routed through the back plate 232 and the middle plate body 234 to supply gas to the edge region 250 through the edge inlet 252-3.

[0044] The faceplate 220 includes a plurality of holes 254 extending from the plenum 238 to the deposition region 218 within the process chamber 200. For example, gas in the first flow path 240 flows through holes 254 in the center region 242, gas in the second flow path 244 flows through holes 254 in the middle region 246, and gas in the third flow path 248 flows through holes 254 in the edge region 250.

[0045] The gases supplied to the center region 242, the middle region 246, and the edge region 250 may be independently controlled to add or remove specific reactants (i.e., gases) supplied to the respective regions of the substrate 208. By way of example only, the gas mixture supplied to the deposition region 218 to perform bulk deposition may include various reactive and non-reactive gases, such as argon (Ar), molecular hydrogen (H2), tungsten hexafluoride (WF6), molecular nitrogen (N2), etc. In other examples, other gases and gas mixtures may be supplied, such as diborane (C2H6), silane (SiH4), etc. The amount of each gas supplied to the respective regions 242, 246, 250 may be controlled (e.g., using individually controllable components of a gas control system, such as the gas control system 120) to adjust the deposition rate and film properties in different regions of the substrate 208. In other words, the amount of each gas supplied to each region may be independently controlled.

[0046] like Figure 2 As shown, the gas provided to the edge region 250 via the third flow path 248 is provided only to the outermost hole 260 in the panel 220. In other words, the third flow path 248 does not supply gas to the central region 242 and the middle region 246. For example, the hole 260 is in fluid communication with the plenum 238-3 and the plenum 238-4 defined in the edge region 250 of the panel 220, but is not in fluid communication with the plenum 238-1 defined in the central region 242 and the middle region 246. As an example, the plenum 238-4 in the edge region 250 is separated from the plenum 238-1 in the central region 242 and the middle region 246.

[0047] On the contrary, the plenum 238-1 may correspond to a single plenum defined in both the central region 242 and the middle region 246. Therefore, the gas supplied via the first flow path 240 and the second flow path 244 is supplied to the same plenum 238-1. The gas supplied via the first flow path 240 and the second flow path 244 mixes within the plenum 238-1 and flows through the hole 254.

[0048] The sprayhead 204 according to the present disclosure includes a mixer assembly 264. A mixing chamber 268 is defined within the mixer assembly 264, which is configured to direct gas within the sprayhead 204 into the mixing chamber 268 and then downwardly through the stem 228 and into the plenum 238, as described in more detail below.

[0049] Reference now Figure 3 , showing an exemplary spray head 300 including a mixer assembly 304 according to the present disclosure. As an example, the spray head 300 is shown as Figure 2The mixer assembly 304 is configured to direct the gas within the showerhead 300 into a mixing chamber 308 (defined within the mixer assembly 304) and then downwardly through the stem 312 of the showerhead 300 and into the plenum chamber (defined within the head 316 of the showerhead 300, not shown). Figure 3 In some examples (as shown), the mixing chamber 308 is integrated with the stem 312. In other examples, the mixing chamber 308 is a separate component coupled to the upper end of the stem 312.

[0050] Two or more mixer inlets (e.g., mixer inlets 320-1, 320-2, and 320-3, collectively referred to as mixer inlets 320) supply different gases to the mixing chamber 308, respectively. For example, the mixer inlet 320 supplies gases (e.g., Ar, H2, and WF6) for mixing and supplies them to the head 316 via the central inlet 324 (e.g., at the lower end of the central channel or hole 328 passing through the rod 312). The mixer inlet 320 is arranged at an angle that is tangential or approximately tangential (e.g., within 10 degrees) to the outer diameter of the mixing chamber 308. In other words, the mixer inlet 320 is arranged to supply the gas to the mixing chamber 308 at an angle that is tangential to the inner surface of the mixing chamber 308. Therefore, the gas injected into the mixing chamber 308 flows to the upper end of the mixing chamber 308 in an upward, annular flow pattern (e.g., an upward spiral). The corresponding flow pattern facilitates mixing of the gases in the mixing chamber 308.

[0051] The mixed gas flows upward from the mixing chamber 308 and enters the valve assembly 332 via a plurality of mixer outlets 336. The valve assembly 332 is disposed above the stem 312 and selectively provides fluid communication between the outlets 336 and the central bore 328. For example, in a first state, the valve assembly 332 enables gas supplied from the inlet 340 to flow into the central bore 328. In the first state, the valve assembly 332 blocks gas from flowing from the mixer outlets 336 to the central bore 328. As an example, the inlet 340 supplies a remote plasma cleaning gas to the showerhead 300. In a second state, the valve assembly 332 enables mixed gas supplied from the mixer outlets 336 to flow to the central bore 328 (e.g., during a deposition process as described above).

[0052] Conversely, as described above, the gases supplied to the showerhead 300 to be provided to the middle and edge regions are supplied to the rod portion 312 via the inlets 344 and 348, respectively. For example, a plurality of gases (e.g., Ar, H2, and WF6) are supplied to the middle region manifold assembly 350 and the edge region manifold assembly 352, respectively. The gases from the manifold assemblies 350, 352 are supplied to the respective mixing tubes 354, 356. The mixing tubes 354, 356 are arranged between the manifold assemblies 350, 352 and the inlets 344, 348, respectively. The mixing tubes 354, 356 are configured to mix the gases supplied to the manifold assemblies 350, 352 and then supply them to the middle and edge regions, as described in more detail below. In some examples, the mixing tubes 354, 356 are detachably coupled to the manifold assemblies 350, 352 and the inlets 344, 348, so as to facilitate disassembly for replacement, cleaning, etc.

[0053] Reference now Figure 4A , 4B 4C and 4D describe the operation of the exemplary mixing chamber 400 in more detail. Figure 4A 4 is a plan (top) view of the mixing chamber 400 . Figure 4B The mixing chamber 400 and the central hole 404 defined in the stem of the spray head (e.g., corresponding to Figure 3 A side view of the center hole 328 of the rod portion 312. Figure 4C and 4D The gas flow within the mixing chamber 400 and the central hole 404 is depicted in plan view and side view, respectively.

[0054] Mixer inlets 412-1, 412-2, and 412-3 (collectively referred to as mixer inlets 412) supply the respective gases to the mixing chamber 400, as described above in Figure 3 As shown in the figure, each mixer inlet 412 is arranged at an angle tangent to the mixing chamber 400. In other words, the mixing chamber 400 is generally circular, and the mixer inlet 412 is aligned / parallel to a line that is approximately (e.g., + / - 5 degrees) tangent to the outer diameter of the mixing chamber 400. In some examples, each mixer inlet 412 is arranged at the same angle relative to the mixing chamber 400. In other examples, the mixer inlets 412 are arranged at different angles. For example, one or more mixer inlets 412 can be arranged at an angle that is not tangential to the outer diameter of the mixing chamber 400.

[0055] The mixer inlets 412 may be arranged at uniform (as shown) or non-uniform intervals around the mixing chamber 400. The mixer inlets 412 may be generally horizontal (i.e., perpendicular to the central hole 404 and the central axis of the mixing chamber 400). In some examples, one or more mixer inlets 412 may be angled in the vertical direction so that gas is supplied to the mixing chamber 400 at an upward or downward angle.

[0056] Thus, the angle and spacing of the mixer inlets 412 may be varied to achieve a desired flow pattern and mixing turbulence within the mixing chamber 400. For example, the different gases supplied to the mixing chamber 400 may have different weights, densities, or other flow characteristics. The corresponding mixer inlets 412 for each gas may be arranged according to the different flow characteristics of the gases to optimize mixing within the mixing chamber 400.

[0057] The mixer inlet 412 is arranged near (e.g., within 15 mm of) the bottom surface 416 of the mixing chamber 400. For example, the mixer inlet 412 is arranged to supply gas to the lower half of the mixing chamber 400. In some examples, the bottom surface 416 is rounded or curved. For example, the interface 420 between the side wall 424 and the bottom surface 416 is curved. In this way, the bottom surface 416 can be configured to promote the upward flow of gas within the mixing chamber 400.

[0058] The arrangement of the mixer inlet 412 and the mixing chamber 400 is configured to produce an upward annular flow of mixed gas toward the mixer outlet 428. The mixer outlet 428 supplies the mixed gas to the upper opening 432 of the central hole 404, which in turn supplies the mixed gas to the base of the showerhead, as described above in Figure 3 As described in .

[0059] Figure 5A and Figure 5B is a plan (top) view of an exemplary mixing tube 500 according to the present disclosure. Figure 5C 500 is a side view of an exemplary mixing tube 500. The mixing tube 500 corresponds to the mixing tubes 354, 356 arranged to supply gas to the middle and edge regions, as described above. Figure 3 The mixing tube 500 is configured to mix the gases before supplying the gases to the middle and edge regions.

[0060] For example, Figure 5AAs shown, the mixing tube 500 may include a mixing structure 504. The mixing structure 504 is arranged within the interior volume of the mixing tube 500 and extends along the vertical axis of the mixing tube 500. The mixing structure 504 includes a mixing feature 508, such as a curved spoke, a blade, etc. In other examples, the mixing structure 504 may have a spiral ribbon shape, a twisted ribbon shape, etc. The mixing structure 504 is configured to induce turbulence within the mixing tube 500 to promote mixing of the gas within the mixing tube 500 and then supply to the spray head.

[0061] exist Figure 5B In another example shown, the inner surface of the mixing tube 500 includes a plurality of protruding features 512 that extend radially inward into the interior volume of the mixing tube 500. Although the features 512 are semicircular as shown, other shapes may be used. The features 512 may correspond to a single bump distributed across the entire interior surface, a vertical ridge extending vertically along the interior surface or spiraling downward along the interior surface, etc. The features 512 increase turbulence within the interior volume of the mixing tube 500 to promote mixing of the gases before they are supplied to the spray head.

[0062] exist Figure 5C In another example shown, one or more helical grooves 516 are defined in the inner surface of the mixing tube 500. Similar to the structure 504 and the feature 512, the helical grooves 516 increase turbulence within the interior volume of the mixing tube 500 to promote mixing of the gas before being supplied to the spray head. In other examples, other components of the spray head (e.g., channels defined within the stem 312, between the inlets 344, 348 and the head 316) may include features to promote mixing of the gas before being supplied to the corresponding plenum.

[0063] The foregoing description is merely illustrative in nature and is by no means intended to limit the present disclosure, its application or use. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited, because when studying the drawings, the specification and the appended claims, other modifications will become apparent. It should be understood that, without changing the principles of the present disclosure, one or more steps in the method can be performed in different orders (or simultaneously). In addition, although each embodiment is described above as having certain features, any one or more of those features described relative to any embodiment of the present disclosure can be implemented in the features of any other embodiment and / or combined with the features of any other embodiment, even if the combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and the replacement of one or more embodiments with each other remains within the scope of the present disclosure.

[0064] Various terms are used to describe the spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Unless the relationship between a first and a second element is explicitly described as "direct," when such a relationship is described in the above disclosure, the relationship can be a direct relationship, in which there are no other intervening elements between the first and second elements, but can also be an indirect relationship, in which there are one or more intervening elements (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be interpreted to mean a logical (A or B or C), using a non-exclusive logical OR, and should not be interpreted to mean "at least one of A, at least one of B, and at least one of C."

[0065] In some implementations, the controller is part of a system, which can be part of the above examples. Such a system can include a semiconductor processing device, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems can be integrated with electronic devices for controlling their operation before, during, and after the processing of semiconductor wafers or substrates. The electronic device can be referred to as a "controller", which can control various components or subcomponents of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any of the processes disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out of tools connected or docked with specific systems and other transfer tools and / or load locks.

[0066] In general, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. The integrated circuit can include a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various individual settings (or program files) that define operating parameters for performing specific processing on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the manufacture of one or more (kinds of) layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0067] In some implementations, the controller may be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the "cloud" or may be all or part of a wafer fab host system that may allow remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, check the history of past manufacturing operations, check trends or performance criteria for multiple manufacturing operations, to change the parameters of the current processing, set processing steps to follow the current processing, or start a new processing. In some examples, a remote computer (e.g., a server) may provide a processing recipe to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of processing to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, for example, by including one or more discrete controllers networked together and working toward a common purpose (e.g., processing and control as described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber that communicate with one or more integrated circuits remotely (e.g., at a platform level or as part of a remote computer), which combine to control processing on the chamber.

[0068] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, chamfer edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0069] As described above, depending on one or more processing steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in material transport to transport wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

Claims

1. A showerhead for a substrate processing chamber, the showerhead comprising: a header configured to receive at least a first gas mixture, wherein at least a first plenum is defined within the header, and wherein the first gas mixture flows into the first plenum and from the first plenum into a deposition region of the substrate processing chamber via holes disposed in a lower surface of the header; a stem coupled to the head, the stem configured to supply the first gas mixture to the head through a central hole defined in the stem; as well as A mixing chamber is arranged on the rod portion, the mixing chamber being configured to (i) receive a first gas supplied by a first mixer inlet and a second gas supplied by a second mixer inlet, (ii) mix the first gas and the second gas into the first gas mixture, and (iii) guide the first gas mixture into an upper end of the central hole to be supplied downwardly into the head.

2. The spray head of claim 1 , wherein the mixing chamber is arranged around the central hole at the upper end of the stem, and wherein the mixing chamber is configured to direct the first gas mixture upward within the mixing chamber and into the upper end of the central hole.

3. The spray head of claim 2, further comprising a plurality of mixer outlets extending upward from an upper end of the mixing chamber and toward the upper end of the central bore.

4. The sprayhead of claim 3, further comprising a valve assembly disposed above the mixing chamber, wherein the valve assembly is configured to selectively allow fluid communication between the mixer outlet and the upper end of the central bore. 5 . The showerhead of claim 1 , wherein the mixing chamber is configured to receive a third gas supplied by a third mixer inlet and mix the third gas with the first gas and the second gas into the first gas mixture.

6. The sprayhead of claim 5, wherein the first mixer inlet, the second mixer inlet, and the third mixer inlet are arranged at an angle tangential to an outer surface of the mixing chamber.

7. The showerhead of claim 5, wherein the first, second and third mixer inlets are arranged such that the first, second and third gases are supplied into the mixing chamber at an angle tangential to an inner surface of the mixing chamber.

8. The showerhead of claim 1, wherein a bottom surface of the mixing chamber is configured to direct the first gas mixture upward within the mixing chamber.

9. The showerhead of claim 8, wherein the bottom surface is curved.

10. The nozzle according to claim 1 further comprises a first inlet, wherein the first inlet is arranged to supply a second gas mixture to the rod portion, the first inlet is coupled to a first mixing tube, and the first mixing tube is configured to (i) receive at least the first gas and the second gas, (ii) mix the first gas and the second gas into the second gas mixture, and (iii) supply the second gas mixture to the middle area of ​​the head via the first inlet and the rod portion.

11. The nozzle according to claim 10 further comprises a second inlet, the second inlet being arranged to supply a third gas mixture to the rod portion, the second inlet being coupled to a second mixing tube, the second mixing tube being configured to (i) receive at least the first gas and the second gas, (ii) mix the first gas and the second gas into the third gas mixture, and (iii) supply the third gas mixture to an edge region of the head via the second inlet and the rod portion.

12. The spray head of claim 11 , wherein each of the first mixing tube and the second mixing tube comprises at least one of: (i) a mixing structure disposed within an interior volume, (ii) a plurality of protruding features extending radially inward from an interior surface into the interior volume, and (iii) one or more spiral grooves defined in the interior surface.

13. The spray head according to claim 1, comprising: a panel having a central region, a middle region radially outward of the central region, and an edge region radially outward of the middle region, wherein the panel comprises a plurality of first holes distributed throughout the central region and the middle region, and a plurality of second holes distributed throughout the edge region; Middle plate; as well as A backing plate, wherein the intermediate plate body is disposed between the face plate and the backing plate, and wherein the face plate is configured to receive the first gas mixture supplied to the first plenum and supply the first gas mixture to the deposition area via the plurality of first holes.

14. The showerhead of claim 13, further comprising a first inlet arranged to supply a second gas mixture to the stem portion and a second inlet arranged to supply a third gas mixture to the stem portion.

15. The spray head according to claim 14, wherein: The panel includes an intermediate region radially outward of the central region; the panel being configured to receive the second gas mixture in the intermediate region via the first inlet of the stem portion and the intermediate inlet of the head portion; The panel includes an edge region radially outward of the middle region; as well as The panel is configured to receive the third gas mixture in the edge region via the second inlet of the stem portion and an edge inlet of the head portion.

16. A showerhead for a substrate processing chamber, the showerhead comprising: a header defining a central region, a middle region radially outward of the central region, and an edge region radially outward of the middle region, the header being configured to receive a first gas mixture in the central region, a second gas mixture in the middle region, and a third gas mixture in the edge region; a stem portion coupled to the head, the stem portion configured to supply the first gas mixture to the central region of the head through a central hole defined in the stem portion, supply the second gas mixture to the central region of the head through a middle inlet, and supply the third gas mixture to the edge region of the head through an edge inlet; as well as A mixing chamber is arranged on the rod portion, and the mixing chamber is configured to (i) receive a first gas supplied by a first mixer inlet, a second gas supplied by a second mixer inlet, and a third gas supplied by a third mixer inlet, (ii) mix the first gas, the second gas, and the third gas into the first gas mixture, and (iii) guide the first gas mixture into the upper end of the central hole to be supplied downwardly into the central area of ​​the head.

17. The spray head according to claim 16, further comprising: a first inlet arranged to supply the second gas mixture to the rod portion, the first inlet coupled to a first mixing tube, the first mixing tube configured to (i) receive the first gas, the second gas, and the third gas, and (ii) mix the first gas, the second gas, and the third gas into the second gas mixture; as well as a second inlet arranged to supply the third gas mixture to the rod portion, the second inlet coupled to a second mixing tube, the second mixing tube being configured to (i) receive the first gas, the second gas and the third gas, and (ii) mix the first gas, the second gas and the third gas into the third gas mixture.

18. The showerhead of claim 17, wherein the first, second and third mixer inlets are arranged such that the first, second and third gases are supplied into the mixing chamber at an angle approximately tangential to an inner surface of the mixing chamber.

19. A system comprising: a substrate processing chamber configured to perform bulk deposition on a substrate; as well as The spray head according to claim 18.

20. The system of claim 19, further comprising a controller configured to control a gas delivery system to independently supply the first gas, the second gas, and the third gas to each of the mixing chamber, the first mixing tube, and the second mixing tube.

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