Symmetrical antenna array for high density plasma enhanced processing chamber

Abstract

The present disclosure relates to an antenna array. The antenna array includes a plurality of dielectric windows coupled to a support structure including a plurality of gas ports, a main frame including a main conduit connected to a power source, and a plurality of sub-frames supported by the main frame. The sub-frame includes a sub-duct connected to the main duct. And a plurality of inductive couplers disposed over the plurality of dielectric windows and supported by the sub-frame. And a plurality of inductive couplers, wherein the plurality of inductive couplers comprise a plurality of antenna connectors and a plurality of antennas. A plurality of antenna connectors connect the plurality of antennas to the secondary conduit.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to processing chambers, such as high density plasma (HDP) chambers. More particularly, embodiments of the present disclosure relate to symmetrical antenna arrays for use in HDP chambers. Background Art

[0002] In the manufacture of solar panels or flat panel displays, a number of processes are used to deposit thin films on substrates, such as semiconductor substrates, solar panel substrates, and liquid crystal display (LCD) and / or organic light emitting diode (OLED) substrates, to form electronic components thereon. Deposition is typically accomplished by introducing a precursor gas into a chamber having a substrate disposed on a temperature-controlled substrate support. The precursor gas is typically directed through a gas distribution assembly disposed above the substrate support. The precursor gas in the chamber is energized (e.g., excited) into a plasma by applying a single radio frequency (RF) antenna or a radio frequency (RF) antenna array inductively coupled to the precursor gas to form a plasma. The excited gas reacts to form a material layer on the surface of the substrate located on the temperature-controlled substrate support.

[0003] The size of the substrates used to form electronic devices has a surface area exceeding 1 square meter. Film thickness uniformity on these substrates is difficult to achieve. As the size of the substrate increases, film thickness uniformity becomes more difficult. In order to provide uniform thickness, the gas can be provided to the processing area in multiple gas distribution areas. Each gas distribution area includes a gas chamber for controlling gas distribution and plasma formation. However, as the size of the substrate continues to increase, the uniformity of plasma generation remains a challenge.

[0004] Therefore, there is a need in the art for a method and apparatus for improving thickness uniformity on large substrates. Summary of the invention

[0005] Specific embodiments of the present disclosure include methods, apparatus, and systems for distributing plasma.

[0006] In some embodiments, an antenna array is disclosed. The antenna array includes a plurality of dielectric windows, a main frame and a plurality of sub-frames, the plurality of dielectric windows are coupled to a support structure including a plurality of gas ports, the main frame includes a main conduit connected to a power source, and the plurality of sub-frames are supported by the main frame. The sub-frame includes a sub-conduit connected to the main conduit. A plurality of inductive couplers are disposed above the plurality of dielectric windows and supported by the sub-frames. The plurality of inductive couplers include a plurality of antenna connectors and a plurality of antennas. The plurality of antenna connectors connect the plurality of antennas to the sub-conduits.

[0007] In some embodiments, a controller for a processing system storing instructions is disclosed. The instructions, when executed by a processor, cause the system to process a substrate within a processing chamber by flowing a processing gas through a support structure having a gas port into a processing region, forming a plasma using a plurality of inductive couplers, and depositing a film on the substrate. The processing chamber further includes a plurality of sensors for measuring a deposition rate, a power source, a temperature, and a gas flow rate, calculating a deposition rate on the substrate; and adjusting processing chamber parameters. The processing system includes: a main frame, the main frame including a main conduit connected to a power source; a plurality of sub-frames, the plurality of sub-frames supported by the main frame and including sub-conduits connected to the main conduits; and a plurality of inductive couplers, the plurality of inductive couplers being disposed above a plurality of dielectric windows and supported by the sub-frames.

[0008] In some embodiments, an antenna array is disclosed. The antenna array includes a plurality of dielectric windows, the plurality of dielectric windows are coupled to a support structure, the support structure includes a plurality of gas ports. The support structure includes a plurality of openings, a plurality of gas ports, and a plurality of gas distribution arms. The gas distribution arms extend from the intersection of the length and width of the opening into the opening. The main frame includes a main conduit connected to a power source. The main frame supports a plurality of sub-frames. The sub-frame includes a sub-conduit connected to the main conduit. A plurality of inductive couplers are disposed above the plurality of dielectric windows and supported by the sub-frames. A plurality of inductive couplers, the plurality of inductive couplers include a plurality of antenna connectors and a plurality of antennas. The plurality of antenna connectors connect the plurality of antennas to the sub-conduits. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The present disclosure briefly summarized above may be more particularly described with reference to a number of specific embodiments, some of which are illustrated in the attached drawings, in order to understand the above-mentioned features of the present disclosure in more detail. However, it should be noted that the attached drawings illustrate only exemplary embodiments and therefore should not be considered to limit the scope of the embodiments, and other equivalent embodiments may be admitted.

[0010] Figure 1 is a schematic cross-sectional front view of a chamber according to a specific embodiment of the present disclosure.

[0011] Figure 2 is an enlarged schematic cross-sectional perspective view of a portion of a lid assembly according to an embodiment of the present disclosure.

[0012] Figure 3 is a schematic top plan view of an antenna within a cover assembly according to a specific embodiment of the present disclosure.

[0013] Figure 4A and Figure 4B is a schematic perspective view of an antenna array according to a specific embodiment of the present disclosure.

[0014] Figure 5 is a schematic top plan view of an antenna array according to a specific embodiment of the present disclosure.

[0015] Figure 6 is a schematic top plan view of an alternative antenna array according to a specific embodiment of the present disclosure.

[0016] Figure 7 is a schematic top plan view of a support structure for a dielectric window according to a specific embodiment of the present disclosure.

[0017] Figure 8 is a top view of a support structure with a gas distribution arm according to a specific embodiment of the present disclosure.

[0018] Fig. 9 is a top view of a support structure with an alternative gas distribution arm according to a specific embodiment of the present disclosure.

[0019] Fig.10 According to the specific embodiment of the present disclosure Figure 1 Schematic diagram of the controls used within the chamber.

[0020] Fig.11 is a flow chart of a method for depositing a film on a substrate according to a specific embodiment of the present disclosure.

[0021] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0022] Embodiments of the present disclosure generally relate to processing chambers, such as high density plasma (HDP) chambers. More particularly, embodiments of the present disclosure relate to symmetrical antenna arrays for use in HDP chambers.

[0023] Here, a support structure is configured to flow a gas therethrough and into a processing volume in a plurality of independently controlled zones of a chamber so as to improve the uniformity of processing of surfaces of substrates exposed to the gas in the processing zones. The processing zones are configured to allow a process gas to flow therein and be distributed to result in a relatively uniform flow rate, or in some cases a tailored flow rate, of the gas into the processing volume. An inductive coupler, such as a radio frequency (RF) antenna, is positioned adjacent to a dielectric window, and the inductive coupler inductively couples energy through the dielectric window to ignite and maintain a plasma in the processing volume. The flow rate of the process gas in each zone is controlled to produce a uniform or tailored gas flow to achieve a desired processing result on the substrate.

[0024] Specific embodiments of the present disclosure include a high density plasma chemical vapor deposition (HDP CVD) processing chamber operable to form one or more layers or films on a substrate. The processing chamber disclosed herein is suitable for delivering an energized substance of a precursor gas generated in a plasma. The plasma can be generated by inductively coupling energy into a gas under vacuum. It should be understood that the specific embodiments discussed herein can be implemented in other chambers capable of providing a high density plasma.

[0025] Figure 1 1 is a cross-sectional side view of an illustrative processing chamber 100 according to one embodiment of the present disclosure. A substrate 102 is shown on a substrate surface 120 within a chamber body 104. In one embodiment, the substrate 102 comprises a dielectric material (e.g., SiO2, SiO x N y ), semiconductor materials (e.g., silicon or doped silicon), barrier materials (SiN x 、SiO x N y ) or a combination thereof. The processing chamber 100 also includes a lid assembly 106, a bottom 118 disposed opposite the lid assembly 106, and a pedestal or substrate support assembly 108 disposed between the lid assembly 106 and the bottom 118. The lid assembly 106 is disposed at an upper end of the chamber body 104, and the substrate support assembly 108 is at least partially disposed within the chamber body 104. The substrate support assembly 108 is coupled to a shaft 110. The shaft 110 is coupled to a drive 112 that moves the substrate support assembly 108 vertically (in the Z direction) within the chamber body 104. Figure 1 The processing chamber 100 is shown with the substrate support assembly 108 in a processing position. However, the substrate support assembly 108 may be lowered in the Z direction to a position adjacent the transfer port 114.

[0026] The lid assembly 106 may include a backing plate 122 resting on the chamber body 104. The lid assembly 106 also functions as a plasma source 128. To function as the plasma source 128, the lid assembly 106 includes one or more inductively coupled plasma generating components, or inductive couplers 130. Each of the one or more inductive couplers 130 may be a single inductive coupler 130, two inductive couplers 130, or more than two inductive couplers 130, hereinafter referred to as inductive couplers 130. Each of the one or more inductive couplers is coupled across power and ground 133. Although Figure 1Each inductive coupler 130 is depicted connected in series to a power supply and ground 133, but parallel connections are also contemplated so that each inductive coupler 130 is independently connected to a power supply and ground 133 and controlled. In some specific embodiments, ground 133 is a capacitor. The power supply includes matching circuits or tuning capabilities for adjusting the electrical characteristics of the inductive couplers.

[0027] Each dielectric window 138 is supported by a plurality of support members 136. Each of the one or more inductive couplers, or portions of the one or more inductive couplers, is positioned on or over a corresponding dielectric window 138. Figure 2 An inductive coupler 130 is shown disposed above a dielectric window 138 within the lid assembly 106. Each of the one or more inductive couplers 130 is configured to generate an electromagnetic field that energizes the process gas into a plasma in the process region 126 as the gas flows into the process region 126. In some embodiments, the process gas from a gas source is provided to the process region 126 via a conduit in the support member 136. The spatial or flow rate of the gas entering and leaving the process region 126 is controlled in different regions of the process region 126. Regional control of the process gas is provided by a plurality of flow controllers, such as mass flow controllers 142, 143, and 144. For example, the gas flow rate to the peripheral or outer regions of the process region 126 is controlled by the flow controllers 142, 143, while the gas flow rate to the central region of the process region 126 is controlled by the flow controller 144. When chamber cleaning is required, a cleaning gas from a cleaning gas source flows to the process region 126 where the cleaning gas is energized into ions, radicals, or both. An energized cleaning gas is flowed into the processing region 126 to clean the chamber components. In one embodiment, the processing gas includes argon (Ar), nitrogen (N2), helium (He), oxygen (O2), carbon dioxide (CO2), hydrogen (H2), ammonia (NH3), phosphine, nitrogen trifluoride (NF3), fluorine (F2), sulfur hexafluoride (SF6), silane (SiH4), tetraethyl orthosilicate (TEOS), water vapor (H2O), or a combination thereof.

[0028] The processing chamber 100 further includes a controller 116. The controller 116 is in communication with the processing chamber 100 and is used to control processes in the processing chamber 100. The processing chamber 100 includes a plurality of sensors (not shown) disposed therein for measuring parameters such as temperature, gas flow, deposition rate, and power.

[0029] Figure 2 This is a side view of the transmission port 114. Figure 1106. The support member 136 further includes an interface member 223. The interface member 223 includes a gas port to allow gas to flow into the processing region 126 at a predetermined flow rate. Each interface member 223 includes a ledge or partition that supports a portion of the perimeter or edge of the dielectric window 138. The interface member 223 may further include a gas distribution arm 770, such as Figure 7 and Figure 8 as described.

[0030] The reduced lateral surface area of ​​the plurality of dielectric windows 138 allows the use of the dielectric material as a physical barrier between the plasma and vacuum environment in the processing region 126 and the atmospheric environment (where the adjacent inductive coupler 130 is typically located) without requiring large stresses to be imposed therein based on a large area supporting atmospheric pressure loads.

[0031] In some specific embodiments, during processing, the processing area 126 has a vacuum pressure of about 10mTorr to about 3Torr. The material used for the plasma source 128 is selected based on one or more of electrical properties, strength and chemical stability. The inductive coupler is made of a conductive material. The back plate 122 and the support member 136 are made of a material capable of supporting the weight of the supported component and the atmospheric pressure load, which may include metal or other similar materials. The back plate 122 and the support member 136 may be made of a non-magnetic material (e.g., non-paramagnetic or non-ferromagnetic material), such as an aluminum material. The dielectric window 138 is made of quartz, alumina or sapphire material. In some specific embodiments, the dielectric window 138 includes copper, silver, aluminum, tungsten, molybdenum, titanium, a combination thereof or an alloy thereof.

[0032] Each inductive coupler 130 includes an antenna 202, which is set to be close to one or more corresponding dielectric windows 138 and a power distribution line coupled to a matching network (e.g., a power supply). In some specific embodiments, each antenna 202 is arranged above the interface of adjacent dielectric windows 138 and at least partially surrounds the interface of adjacent dielectric windows 138. Each antenna 202 is arranged above one or more dielectric windows 138 so that the base portion 203, 302 is positioned on the dielectric window 138. The first and second base portions 203, 302 are composed of a first portion 203 oriented at a certain angle relative to the second portion 302, for example, perpendicular to the second portion 302 and arranged along the X axis. The second portion 302 is shown along the Y axis. Each second portion 302 is parallel to each other and each first portion 203 is parallel to each other. In the specific embodiment shown, the interface member 223 forms a grid to support the portion of the periphery or edge of the dielectric window 138. This grid produces a longitudinal interface member 223A and a transverse interface member 223B, as shown in Figure 4. The longitudinal interface member 223A intersects and is perpendicular to the second portion 302 of the antenna 202. The transverse member 223B intersects and is perpendicular to the first portion 203 of the antenna 202. Other additional portions are also contemplated to form alternative shapes and angles relative to each other, such as a triangular antenna or a hexagonal antenna. The angles between the portions can be about 60 degrees to about 170 degrees, such as about 80 degrees to about 120 degrees, such as about 90 degrees to about 100 degrees.

[0033] In some embodiments, the RF power supplied to the inductive coupler 130 is about 1 kW to about 500 kW, such as about 5 kW to about 50 kW, such as about 10 kW to about 30 kW, such as about 15 kW to about 20 kW. In some embodiments, the RF power is supplied at a frequency of about 100 kHz to about 500 MHz, depending on the predetermined process and operating parameters. In some embodiments, the RF power is provided to maintain a wavelength of about 1×1010 cm -3 About 10x1012cm -3 The plasma density of the plasma.

[0034] Figure 31 is a top view of an antenna 202 of an inductive coupler 130 located on a dielectric window 138 in a lid assembly 106. The antenna 202 configuration depicts an antenna 202 that can be arranged in a pattern across the lid assembly 106 with an adjacent antenna 202 having substantially the same configuration. The antenna 202 includes a conductor pattern in a rectangular spiral shape. Other spiral shapes, such as triangular or hexagonal, are contemplated based on the shape of the substrate. The electrical connection includes an electrical input terminal 295A and an electrical output terminal 295B. Each of the one or more inductive couplers 130 of the lid assembly 106 is connected in series and / or in parallel. In some embodiments, the electrode shape is selected based on the shape of the antenna base, such as the first portion 203 and the second portion 302. In some embodiments, the electrode shape is a rounded L-shape having a portion that is angled relative to portion 302 (such as substantially perpendicular to the second portion 302) and having an electrode portion that is angled relative to the first portion 203 (such as substantially perpendicular to the first portion 203).

[0035] FIG. 4 is a schematic perspective view of an antenna array 450 according to a specific embodiment. Figure 5 4 is a schematic top view of the antenna array 450. The antenna array 450 includes a main frame 452 and a plurality of sub-frames 454. In the illustrated embodiment, the main frame 452 supports four sub-frames 454. However, other embodiments of the main frame 452 may support more or fewer sub-frames 454. For example, in Figure 6 In A, the main frame 452 supports two sub-frames 454. Figure 6 In B, the first main frame 452A and the second main frame 452B each support two sub-frames 454. Figure 6 C, the first main frame 452A supports the first intermediate frame 455A and the second intermediate frame 455B, and each intermediate frame 455A, 455B supports two sub-frames 454. The sub-frames 454 support a plurality of inductive couplers 130. In a specific embodiment, the main frame 452, the sub-frames 454 and the intermediate frame 455 include metal materials (e.g., stainless steel).

[0036] Each main frame 452 includes a main conduit 456 and each sub-frame 454 includes a sub-conduit 458. In a specific embodiment including an intermediate frame 455, the intermediate frames 455 each include an intermediate conduit (not shown). In some specific embodiments, the intermediate frame 455 can support multiple additional intermediate frames 455 to connect the main frame 454 to the sub-frame 454. In a specific embodiment, the main frame 452 and the sub-frame 454 are perpendicular to each other. In a specific embodiment where the intermediate frame 455 is present, the intermediate frame is perpendicular to the main frame 452 and the sub-frame 454, and the main frame 452 and the sub-frame 454 are parallel to each other.

[0037] The main conduit 456 is connected to each of the secondary conduits 458 to supply RF power to the secondary conduits 458. In the specific embodiment with the intermediate frame 455, the intermediate conduit connects the main conduit 456 to the secondary conduits 458. Each secondary conduit 458 connects the RF power supply to the inductive coupler 130. The inductive coupler 130 includes a plurality of electrical input terminals 295A and a plurality of electrical output terminals 295B. In the specific embodiment shown, the inductive coupler 130 includes four antenna connectors 462 to connect to four antennas 202, thereby generating an antenna subarray 470. However, other specific embodiments may have more or fewer antenna connectors 462. For example, in a specific embodiment with a hexagonal antenna, the inductive coupler has six antenna connectors 462 to connect to six antennas 202. The antenna connector 462 connects the antenna 202 to the secondary conduit 458 to supply RF power to the antenna subarray 470. In the specific embodiment shown, each secondary frame 454 supports three antenna subarrays 470. However, other specific embodiments may have more or fewer antenna subarrays 470. In one specific embodiment, the inductive coupler 130 divides the RF power equally between each individual antenna 202 in the antenna subarray 470 so that the path length and power application are approximately equal, thereby improving processing uniformity. In another specific embodiment, the power application is individually controlled by a variable load at each antenna 202 so that the power between any two antennas 202 can be significantly different. Each of the main frame 452, the secondary frame 454, and the intermediate frame 455 is parallel or perpendicular to the current flow of the antenna 202 or antenna subarray 470 around the dielectric window 138. Being perpendicular to the flow of current makes the frames 452, 454, 455 transparent or nearly transparent to the induced current plasma (ICP), thereby minimizing the effect of the frames 452, 454, 455 on the ICP current. The magnetic field generated by the antenna 202 current is minimally affected by the presence of a metal frame between the antenna and the plasma, while the magnetic field is significantly attenuated if the frames 452, 454, 455 are parallel to the current.

[0038] The antenna array 450 further includes a plurality of gas conduits 465. The gas conduits 465 allow process gas to flow from a gas source through the support member 136 and the interface member 223 to the process region 126. In the illustrated embodiment, the gas conduits 465 are located in the center of each antenna 202 and between the second base portions 302 of adjacent antennas 202. However, in other embodiments, other gas conduit 465 locations are also contemplated.

[0039] Figure 7A top view of a support structure 700 for a dielectric window 138 is depicted. The support structure 700 includes a plurality of support members 136 and an interface member 223. The interface members 223, such as the longitudinal interface member 223A and the transverse interface member 223B, intersect at an intersection region 725. The support structure 700 includes a plurality of openings 712A, 712B through which the dielectric window 138 is disposed. An end opening 712A is disposed on each end of the support structure 700, and a center opening 712B is disposed between the two end openings 712A. Although only a single center opening 712B is shown between the two end openings, multiple center openings 712B are also contemplated depending on the size of the substrate to be processed. In a specific embodiment, the length of each end opening 712A is shorter than the center opening 712B disposed therebetween. The width of each end opening 712A is equal to the width of the center opening 712B. The widths of the end openings 712A and the center opening 712B correspond to the length of the longitudinal interface member 233A. The length of the end openings 712A and the center opening 712B corresponds to the length of the lateral interface member 233B. Although only two rows of end openings 712A and center openings 712B are shown, other numbers of rows are contemplated depending on the size and dimensions of the substrates to be processed. In some specific embodiments, there are about 6 openings (each of 712A, 712B) to about 30 openings, such as about 8 openings to about 20 openings. In some specific embodiments, each end opening 712A corresponds to a half antenna and each center opening 512B corresponds to a whole antenna, such as two halves of two adjacent antennas disposed thereon or four quarter antennas of four adjacent antennas disposed thereon.

[0040] Return to reference Figure 1 , a lid assembly 106 having an inductive coupler 130 as described herein can be used in an HDP processing chamber. The antenna 202 of the inductive coupler 130 can control the degree of ICP coupling with the plasma at various RF powers. The antenna 202 can be a vertical or flat spiral coil of a concentric or rectangular shape and a spiral RF coil of a non-flat or vertical shape, such as a rectangular coil, a hexagonal coil, or a triangular coil. Adjacent coil portions are arranged to locally drive the plasma and interfere or cancel the generated RF magnetic field so as to control constructive or destructive coupling based on the coil design. In the specific embodiment shown, the rectangular antenna 202 has 3 turns. However, larger or smaller turns are expected.

[0041] exist Figure 5In the particular embodiment of the antenna array 450 shown, which includes the rectangular antenna 202, the first base portion 203 and the second base portion 302 span portions of the support structure 700 at a 90 degree angle, resulting in a current flow perpendicular to the support structure 700. This current flow results in little change in the magnitude of the magnetic field coupled across the support structure, and therefore has little or no effect on the plasma generated beneath the components of the support structure 700.

[0042] The antennas 202 of the antenna subarray 470 are assembled in a symmetrical manner, where each antenna 202 is a mirror image of an adjacent antenna 202, and each antenna subarray 470 is a mirror image of an adjacent mirror subarray 470. Therefore, the current flowing along the first base portion 203 or the second base portion 302 of the antenna 202 has a mirror image with the adjacent antenna 202. As a result, all adjacent antennas 202 and antenna subarrays 470 have equal currents in amplitude and direction. In addition, the electromagnetic fields generated by the antennas 202 and antenna subarrays 470 are enhanced due to constructive (e.g., in-phase) interference, where the highest magnetic field occurs at the interface between the antenna subarrays 470.

[0043] Additionally, antenna array 450 can be scaled up to process larger substrates. By using larger substrates, more electronic devices can be manufactured simultaneously, resulting in a more efficient manufacturing process. Scaling typically requires redesigning the antenna and RF drive system, including new processing chambers. However, if Figure 6 A through 6C, by using antenna subarray 470 as a basic building block, scaling can be performed with little or no change to the basic building block. By adding additional secondary supports 454 supported by additional primary supports 452, antenna array 450 can be expanded and contracted to suit the application.

[0044] Figure 8 A schematic bottom view of a support structure 700 including a gas distribution arm 880 is shown. The gas distribution arm 880 extends from the intersection region 725 of the longitudinal and transverse interface members 223A and 223B to the center of the dielectric window 138. The gas distribution arm 880 extends from the intersection region 725 at an angle between 1° and 89° (e.g., between 30° and 65°). In a specific embodiment, the angle of the gas distribution arm 880 depends on the length and width of the end opening 712A and the center opening 712B (e.g., the length of the transverse interface member 223B and the length of the longitudinal interface member 223A, respectively). By tracking the angle of the ratio of width to length, the gas distribution arm 880 can remain transparent to the induction coil plasma (ICP) current. This is because the portion of the gas distribution arm perpendicular to the width or length is transparent to the ICP current. Therefore, the gas distribution arm has a minimal effect on the ICP current. In a specific embodiment, the gas distribution arm includes a metal material (e.g., an aluminum material).

[0045] Fig. 9 A schematic bottom view of a portion of a support 700 including a gas distribution arm 980 is shown. The gas distribution arm 980 extends from the intersection region 725 of the interface member 223 toward the center of the dielectric window 138. The gas distribution arm 980 extends from the intersection region 725 at an angle between 1° and 89° (e.g., between 30° and 65°). In a specific embodiment, the angle of the gas distribution arm 880 depends on the length and width of the end opening 712A and the center opening 712B (e.g., the length of the transverse interface member 223B and the length of the longitudinal interface member 223A, respectively). By tracking the angle of the ratio of width to length, the gas distribution arm 980 can remain transparent to the induction coil plasma (ICP) current. This is because the portion of the gas distribution arm perpendicular to the width or length is transparent to the ICP current. Therefore, the gas distribution arm has a minimal effect on the ICP current. In a specific embodiment, the gas distribution arm includes a metal material (e.g., an aluminum material).

[0046] The gas distribution arm 980 further includes gas distribution branches 982. The gas distribution branches diverge from the gas distribution arm 980. The first gas distribution branch 982A diverges parallel to the length of the dielectric window 138 and perpendicular to the width of the dielectric window 138. The second gas distribution branch 982B diverges parallel to the width of the dielectric window 138 and perpendicular to the length of the dielectric window 138. The first gas distribution branch 982 is transparent to the current along the width of the dielectric window 138, while the second gas distribution branch 982B is transparent to the current along the length of the dielectric window 138. As with the gas distribution arm 880, this orientation of the gas distribution branch 982 makes the gas distribution branch 982 transparent to the ICP current. Therefore, the gas distribution arm 980 with the gas distribution branch 982 will have a minimal effect on the ICP current.

[0047] Fig.10A control schematic 1000 for use within a processing chamber 100 is shown. The controller is a portion of a processing system for storing instructions that, when executed, cause the processing system to process a substrate within a processing chamber according to the present disclosure. In a specific embodiment, the instructions cause the processing system to process a substrate within a processing chamber by flowing a processing gas through a support structure having a gas port into a processing region, forming a plasma using a plurality of inductive couplers, and depositing the gas on the substrate. The processing chamber includes a plurality of sensors to facilitate deposition on the substrate, measure deposition rates, and control power, temperature, and gas flow rates. The controller 116 receives data or input from sensor readings 1002 from sensors within the processing chamber 100. The controller 116 is equipped with or communicates with a system model 1006 of the processing chamber 100. The system model 1006 includes a heating module, a gas flow module, a power module, and a deposition module. The system model 1006 is a program configured to estimate or determine gas flow, heating, deposition, and power within the processing chamber 100 throughout the process. The controller 116 is further configured to store the readings and calculation results 1004 .

[0048] The readings and calculations 1004 include the previous sensor readings 1002 and any other previous sensor readings within the processing chamber 100. The readings and calculations 1004 further include calculations stored after the sensor readings 1002 are measured by the controller 116 and run through the system model 1006. Therefore, the controller 116 is configured to retrieve the stored readings and calculations 904 and save the readings and calculations 1004 for future use. Maintaining the previous readings and calculations enables the controller 116 to adjust the system model 1006 over time to reflect a more accurate version of the processing chamber 100.

[0049] In the embodiments described herein, the controller 116 includes a programmable central processing unit (CPU) operating in conjunction with a memory and mass storage device, an input control unit, and a display unit (not shown). The controller 116 monitors the precursor gas and purge gas flow rates. Support circuits are coupled to the CPU for supporting the processor in a conventional manner. In some embodiments, the controller 116 includes a plurality of controllers 116 such that the stored readings and calculations 1004 and the system model 1006 are stored in a controller separate from the controller 116 that operates the process chamber 100. In other embodiments, all of the system models 1006 and stored readings and calculations 1004 are stored in the controller 116.

[0050] The controller 116 is configured to control heating, power, deposition, and gas flow through the process chamber 100 by controlling various aspects of the gas flow controller 1008. The gas flow controller 1008 controls the process gas source, purge gas source, and exhaust pump. The controller 116 may also control the shaft 110 within the process chamber 100.

[0051] The controller 116 is configured to adjust the output to each gas flow controller 1008 based on the sensor readings 1002, the system model 1006, and the stored readings and calculations 1004. The controller 116 includes embedded software and compensation algorithms to calibrate the deposition on the substrate 102. The deposition on the substrate 102 can be measured when the substrate leaves the processing chamber or between processing operations to provide a reference for the deposition rate measured using the sensor. The controller 116 can include a machine learning algorithm and can use regression or clustering techniques. The algorithm is an unsupervised algorithm or a supervised algorithm.

[0052] Fig.11 1 is a flow chart of a method 1100 for depositing a film on a substrate according to a specific embodiment. The method includes flowing a precursor gas to a processing region 126 in operation 1102. In operation 1104, RF power is provided to an inductive coupler disposed above the processing region 126. In operation 1106, plasma is distributed to the processing region 126 of the high density plasma processing chamber 100. The plasma has a density of about 1x10 10 cm -3 About 10x10 12 cm -3 The plasma density is 1000 μm, and each gas space is maintained at a vacuum volume of about 10 mTorr to about 3 Torr. A film is deposited on a substrate (eg, a rectangular substrate), the film being composed of silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof.

[0053] While the foregoing is directed to specific embodiments of the present disclosure, other and further specific embodiments may be devised without departing from the basic scope of the foregoing, and the scope of the foregoing is to be determined by the following claims.

Claims

1. An antenna array, comprising: a plurality of dielectric windows coupled to a support structure, the support structure comprising a plurality of gas ports; A main frame, the main frame including a main conduit connected to a power source; a plurality of sub-frames supported by the main frame and comprising sub-conduits connected to the main conduit; and A plurality of inductive couplers are disposed above the plurality of dielectric windows and supported by the secondary frame, the plurality of inductive couplers comprising a plurality of antenna connectors and a plurality of antennas, wherein the plurality of antenna connectors connect the plurality of antennas to the secondary conduit. 2 . The antenna array according to claim 1 , wherein the main frame and the plurality of sub-frames comprise metal materials. 3 . The antenna array according to claim 1 , wherein the plurality of antennas include a plurality of coils forming a rectangular coil, a triangular coil or a hexagonal coil. 4 . The antenna array according to claim 1 , wherein the plurality of antennas are disposed above one or more dielectric windows among the plurality of dielectric windows.

5. The antenna array of claim 1, wherein the support structure comprises a plurality of end openings and a plurality of center openings, wherein each of the end openings has two partial antennas disposed above the end opening.

6. The antenna array of claim 5, wherein the complete antenna corresponding to each central opening has four partial antennas disposed above the central opening.

7. The antenna array according to claim 5, wherein the support structure further comprises a plurality of gas distribution arms, wherein the gas distribution arms extend from the intersection area into the central opening with the length and width of the central opening, or extend into the end opening with the length and width of the end opening.

8. The antenna array of claim 5, wherein the dielectric window comprises a length and a width, and the main frame is perpendicular to the length of the dielectric window, and the sub-frame is parallel to the length of the end openings and the center opening.

9. A controller for a processing system, the controller storing instructions which, when executed by a processor, cause the system to: Processing a substrate in a process chamber by flowing a process gas through a support structure having a gas port into a process region, forming a plasma using a plurality of inductive couplers, and depositing a film on the substrate, wherein the process chamber further comprises a plurality of sensors to: Measures deposition rate, power, temperature, and gas flow rates; calculating a deposition rate on the substrate; and adjusting processing chamber parameters; and wherein the processing system includes a main frame including a main conduit connected to a power source; a plurality of sub-frames supported by the main frame and comprising sub-conduits connected to the main conduit; and A plurality of inductive couplers are disposed above the plurality of dielectric windows and supported by the sub-frame.

10. The controller of claim 9, wherein the processing system further comprises: a plurality of dielectric windows coupled to a support structure, the support structure comprising a plurality of gas ports; and A plurality of inductive couplers, the plurality of inductive couplers comprising a plurality of antenna connectors and a plurality of antennas, wherein the plurality of antenna connectors connect the plurality of antennas to the secondary conduit. 11 . The controller of claim 10 , wherein the plurality of antennas comprises a plurality of coils forming one or more of a rectangular coil, a triangular coil, or a hexagonal coil.

12. The controller of claim 11, wherein the support structure comprises a plurality of end openings and a plurality of center openings, wherein each of the end openings corresponds to half of an antenna and each center opening corresponds to a complete antenna.

13. A controller according to claim 12, wherein the support structure further includes a plurality of gas distribution arms, the gas distribution arms extending from the intersection area to the central opening with the length and width of the central opening, or extending to the end opening with the length and width of the end opening.

14. The controller according to claim 13, wherein the gas distribution arm comprises a first gas distribution branch and a second gas distribution branch, the first gas distribution branch is parallel to the length of the end opening and the center opening, and the second gas distribution branch is parallel to the width of the end opening and the center opening.

15. The controller of claim 12, wherein the dielectric window comprises a length and a width, and the main frame is perpendicular to the length of the dielectric window, and the sub-frame is parallel to the length of the end openings and the center opening.

16. An antenna array, comprising: a plurality of dielectric windows coupled to a support structure, the support structure comprising a plurality of gas ports, wherein the support structure comprises a plurality of openings, a plurality of gas ports, and a plurality of gas distribution arms, the gas distribution arms entering the openings from an intersection of a length and a width of the openings; A main frame, the main frame including a main conduit connected to a power source; a plurality of sub-frames supported by the main frame and comprising sub-conduits connected to the main conduit; and A plurality of inductive couplers are disposed above the plurality of dielectric windows and supported by the secondary frame, the plurality of inductive couplers comprising a plurality of antenna connectors and a plurality of antennas, wherein the plurality of antenna connectors connect the plurality of antennas to the secondary conduit.

17. The antenna array of claim 16, wherein the gas distribution arm is angled between 30° and 65° to the length of the opening.

18. The antenna array of claim 16, wherein the gas distribution arm further comprises a plurality of gas distribution branches extending away from the gas distribution arm.

19. The antenna array according to claim 18, wherein the gas distribution arm comprises a first gas distribution branch and a second gas distribution branch, the first gas distribution branch is parallel to the length of the opening, and the second gas distribution branch is parallel to the width of the opening.

20. The antenna array of claim 16, wherein the main frame and the plurality of sub-frames comprise a metal material.

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