Semiconductor laser light source device

Abstract

A semiconductor laser light source device is provided with: a metal base (1); the temperature control module (3) is fixed on the surface of the metal tube seat (1); a first support block (4) fixed to the temperature control module (3); a first dielectric substrate (5) having a back surface fixed to the first support block (4), a semiconductor light modulation element (6) fixed to a front surface, and a first ground electrode pattern (5a) formed thereon; the second supporting block (9) is fixed on the surface of the metal tube seat (1); and a second dielectric substrate (10) that is fixed to the second support block (9) and has a second ground electrode pattern (10a) formed on the surface thereof, and a metal film (13) electrically connected to the second ground electrode pattern (10a) is formed in a region of at least half of the length of a side surface of the second dielectric substrate (10), said side surface being located on the first dielectric substrate (5) side.

Description

Technical Field

[0001] The present application relates to a semiconductor laser light source device. Background Art

[0002] As SNS and video sharing services spread around the world, data transmission is accelerating in terms of capacity. In order to cope with high-speed and high-capacity signal transmission within a limited installation space, semiconductor laser light source devices that generate optical signals for transmission are being made faster and smaller.

[0003] As a structure of a semiconductor laser light source device equipped with a semiconductor light modulator element that generates a laser beam modulated as an optical signal, a TO-CAN (Transistor-Outlined CAN) type that can be manufactured at low cost is generally used. Patent document 1 discloses a semiconductor laser light source device in which a temperature control module, first and second support blocks, first and second dielectric substrates, etc. are mounted on a plane of a metal stem.

[0004] The high-frequency signal input to the semiconductor light modulator is performed from the lead pins penetrating the metal stem via the second dielectric substrate, the conductive wire material, and the first dielectric substrate. Therefore, it is desirable that the grounds of the first dielectric substrate and the second dielectric substrate have the same potential.

[0005] Patent Document 1: Japanese Patent Application Publication No. 2022-88061

[0006] In the structure described in Patent Document 1, in order to electrically connect the ground electrode formed on the main surface of the second dielectric substrate to the second supporting block, a side groove is formed in the second dielectric substrate and the connection is made through the side groove, but the conduction method such as the side groove or the through hole has the problem of high difficulty and high cost in manufacturing, and low freedom in installing the conductive wire.

[0007] Furthermore, in the structure described in Patent Document 1, it is difficult to stabilize the ground level by using the side grooves or through holes, and the side grooves or through holes are arranged far from the stem, so the grounding becomes weak and the high-frequency signal transmission characteristics are easily degraded. Summary of the invention

[0008] The present application has been made to solve the above-mentioned problems, and an object of the present application is to provide a semiconductor laser light source device capable of obtaining good transmission characteristics of a high-frequency signal with a simple structure.

[0009] The semiconductor laser light source device disclosed in the present application comprises: a metal tube seat, which has a plurality of lead pins that penetrate the back and the surface and are fixed; a temperature control module, which is fixed to the surface of the metal tube seat; a first metal support block, which is fixed to the surface of the temperature control module on the opposite side of the surface fixed to the metal tube seat and has a first surface perpendicular to the surface of the metal tube seat; a first dielectric substrate, whose back side is fixed to the first surface of the first support block, a semiconductor light modulator is fixed on the surface, and a first ground electrode pattern and a first signal line with one end electrically connected to the semiconductor light modulator are formed; a second metal support block, which is fixed on the surface of the metal stem seat and having a second surface parallel to the first surface of the first support block; and a second dielectric substrate, the back side of which is fixed to the second surface of the second support block, on the surface of which a second signal line and a second ground electrode pattern electrically connected to the first ground electrode pattern are formed, one end of the second signal line is electrically connected to one of the lead pins, the other end of the second signal line is electrically connected to the other end of the first signal line, and a first metal film electrically connected to the second ground electrode pattern is formed in an area of ​​at least half of the length of the side surface of the second dielectric substrate located on the side of the first dielectric substrate.

[0010] According to the present application, it is possible to provide a semiconductor laser light source device that can obtain good transmission characteristics of a high-frequency signal with a simple structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 This is a perspective view schematically showing the structure of the semiconductor laser light source device according to the first embodiment.

[0012] Figure 2 This is a perspective view showing the appearance of the semiconductor laser light source device according to the first embodiment.

[0013] Figure 3 This is a diagram showing a comparison between the high-frequency signal transmission characteristic of the semiconductor laser light source device according to the first embodiment and the transmission characteristic of a conventional semiconductor laser light source device.

[0014] Figure 4 This is a perspective view showing an enlarged view of the main parts of the semiconductor laser light source device according to the second embodiment.

[0015] Figure 5 This is a diagram comparing the high-frequency signal transmission characteristics of the semiconductor laser light source device according to the second embodiment with the transmission characteristics of a conventional semiconductor laser light source device.

[0016] Figure 6 This is a perspective view of a second dielectric substrate of the semiconductor laser light source device according to the third embodiment.

[0017] Figure 7 This is a diagram showing a comparison between the pass characteristics of a high-frequency signal of the semiconductor laser light source device of the third embodiment and the pass characteristics of the semiconductor laser light source device of the first embodiment.

[0018] Figure 8 This is a perspective view showing an enlarged view of the main parts of the semiconductor laser light source device according to the fourth embodiment.

[0019] Fig. 9 This is a diagram showing a comparison between the pass characteristics of a high-frequency signal of the semiconductor laser light source device of the fourth embodiment and the pass characteristics of the semiconductor laser light source device of the first embodiment. DETAILED DESCRIPTION

[0020] The embodiments will be described below with reference to the drawings. The drawings are schematically shown, and the relationship between the size and position of the images shown in different drawings is not necessarily accurately described but can be appropriately changed.

[0021] Implementation method 1.

[0022] Figure 1 FIG. 1 is a perspective view schematically showing the structure of a semiconductor laser light source device according to Embodiment 1. Figure 1 In order to indicate the three-dimensional direction, the x-axis, y-axis, and z-axis are recorded. Figure 1 As shown, a semiconductor laser light source device has a semiconductor light modulator 6 and a component for driving the semiconductor light modulator 6 mounted on the surface side of a metal stem 1 having a plurality of lead pins 2a, 2b, 2c, 2d, and 2e that penetrate the surface and the back. The plurality of lead pins 2a, 2b, 2c, 2d, and 2e are used to electrically connect each electrical component mounted on the metal stem 1 to the outside. The semiconductor light modulator 6 is mounted on the surface of a first dielectric substrate 5. The first dielectric substrate 5 is fixed to a surface (also referred to as a first surface) of a first support block 4 that extends perpendicularly to the surface of the metal stem 1. The first support block 4 is fixed to a temperature control module 3, and the temperature control module 3 is fixed to the metal stem 1. A first seat portion 4a and a second seat portion 4b extending in a direction parallel to the surface of the temperature control module 3 to which the first support block is fixed are formed on one side of the first support block 4 that is fixed to the temperature control module 3. The first seat portion 4a and the second seat portion 4b extend in opposite directions to each other. A light receiving element 7 for receiving light emitted from the back surface of the semiconductor light modulator 6 is fixed to the first mount 4a formed on the side where the first dielectric substrate 5 is mounted. A temperature sensor 8 for monitoring temperature is fixed to the second mount 4b extending in the opposite direction to the first mount 4a.

[0023] Furthermore, a second support block 9 to which a second dielectric substrate 10 is bonded is fixed on a surface (also referred to as a second surface) extending in a direction perpendicular to the surface of the metal stem 1. The first surface of the first support block 4 and the second surface of the second support block 9 are in a positional relationship parallel to each other. A second ground electrode pattern 10a and a second signal line 10c are formed on the surface of the second dielectric substrate 10 (the surface opposite to the surface (back surface) bonded to the second support block 9). One end of the second signal line 10c is electrically connected to one lead pin 2a via a conductor 11 such as solder, and the other end of the second signal line 10c is electrically connected to one end of a first signal line 5c formed on the surface of the first dielectric substrate 5 via a conductive wire 12a. The other end of the first signal line 5c is electrically connected to the modulator of the semiconductor light modulator 6 via a conductive wire 12b. The second ground electrode pattern 10a is electrically connected to the first ground electrode pattern 5a formed on the surface of the first dielectric substrate 5 by the conductive wire 12a. Furthermore, in order to electrically connect the second ground electrode pattern 10a to the second support block 9, a first metal film 13 electrically connected to the second ground electrode pattern 10a is formed in a region of at least half the length of the side surface of the second dielectric substrate 10 located on the first dielectric substrate 5 side. In addition, the second ground electrode pattern 10a is electrically connected to the first pedestal portion 4a of the first support block 4 by a conductive wire 14.

[0024] exist Figure 2 A perspective view showing the appearance of a product level semiconductor laser light source device according to Embodiment 1. Figure 2 As shown, in the semiconductor laser light source device, the side of the metal stem 1 on which each component is mounted is covered by an airtight sealing cover 30, and the internal space formed by the airtight sealing cover 30 and the metal stem 1 for mounting each component is airtightly sealed. It is a structure in which modulated light is radiated from an airtight window 31 provided in the airtight sealing cover 30. In addition, Figure 1 It is a perspective view of a state where the airtight sealing cover 30 is removed to expose the inside.

[0025] The metal stem 1 is substantially circular and plate-shaped, and is a stem base of a metal material formed by applying Au plating on the surface of a material with high thermal conductivity such as Cu, for example. The metal stem 1 fixes the second support block 9 and the temperature control module 3, etc., and plays a role in releasing the heat absorbed by the temperature control module 3 to a cooling member (not shown) provided on the negative side (back side) of the metal stem 1 in the z direction.

[0026] In order to fix each lead pin to the metal stem 1, glass is generally used for the through hole provided in the metal stem 1. In particular, glass of a material with a low dielectric constant is used for the lead pin 2a electrically connected to the second signal line 10c of the second dielectric substrate 10 so as to have the same impedance as the signal generator. If the impedance is not matched, the frequency response characteristics will be degraded due to multiple reflections of the signal, and high-speed modulation will become difficult.

[0027] In order to seal and fix the lead pin to the metal stem 1 with glass, a compression method or a matching method is generally used. In these methods, it is important to keep the airtightness by making the pressure of each lead part equal during sealing, so it is preferred that each lead part is arranged at an equal distance from the outer periphery of the metal stem 1, that is, arranged in a circular position. In addition, if the intervals between adjacent lead parts are too close, the sealing performance will deteriorate, so a certain degree of distance is required.

[0028] In the bonding between the metal stem 1 and the temperature control module 3, as bonding materials, SnAgCu solder, AuSn solder, and conductive adhesive are used. The temperature control module 3 is composed of a plurality of blocks made of materials such as BiTe sandwiched between two substrates made of materials such as AlN, and plays a role in dissipating heat received from the semiconductor light modulator 6 mounted on the substrate on the upper surface side from the lower substrate to the metal stem 1 side.

[0029] Since the oscillation wavelength of the laser changes with the temperature of the semiconductor light modulator 6, it is necessary to keep the temperature constant. Therefore, by installing the temperature control module 3, the semiconductor light modulator 6 is cooled when the temperature rises, and conversely, heated when the temperature drops, so that the temperature of the semiconductor light modulator 6 can be kept constant.

[0030] The first dielectric substrate 5 is formed in a plate shape, for example, Au plating and metallization are applied to the surface of a ceramic material such as aluminum nitride (AlN). Usually, a back ground electrode is formed on the back side of the first dielectric substrate (the surface fixed to the first support block 4). The first dielectric substrate 5 serves as a cooling component that fixes the semiconductor light modulator 6 and releases the heat generated in the semiconductor light modulator 6 to the back side of the metal stem 1 via the first support block 4 and the temperature control module 3. Generally speaking, the first dielectric substrate 5 serves as an electrical insulation function and a heat transfer function.

[0031] A first signal line 5c and a first ground electrode pattern 5a are formed on the surface of the first dielectric substrate 5, one end of the first signal line 5c is electrically connected to the modulator of the semiconductor light modulator 6 via a wire 12b, and the other end of the first signal line 5c and the first ground electrode pattern 5a are electrically connected to a second signal line 10c and a second ground electrode pattern 10a respectively formed on the surface of the second dielectric substrate 10 via a separate conductive wire 12a. Through these connections, a high-frequency signal for modulation input from one lead pin 2a is input to the modulator of the semiconductor light modulator 6, and the semiconductor light modulator 6 generates high-speed modulated light.

[0032] The first support block 4 is a block of a metal material such as Au plated on the surface of a material with high thermal conductivity such as Cu, and has a first seat portion 4a and a second seat portion 4b, and is joined to the temperature control module 3 by soldering or the like. The first support block 4 plays a role in fixing the first dielectric substrate 5 and the like, and transferring the heat generated in the semiconductor light modulator 6 to the temperature control module 3 side.

[0033] The semiconductor light modulator 6 is, for example, a modulator integrated laser diode (EAM-LD) in which an electric field absorption type light modulator using an InGaAsP quantum well absorption layer and a distributed feedback laser diode are monolithically integrated. A laser beam is radiated from a light emitting point in the semiconductor light modulator 6 along an optical axis that is perpendicular to the chip end face and parallel to the chip main surface.

[0034] In order to obtain a higher light output, an optical amplifier SOA (Semiconductor Optical Amplifier) ​​may be further integrated in the emission direction of the semiconductor light modulation element 6 .

[0035] The power supply method for the distributed feedback laser diode can be directly connected from the lead pin 2c via a conductive wire, or Figure 1 As shown, a relay capacitor 20 is connected.

[0036] In order to obtain the maximum voltage amplitude from the signal generator, a matching resistor may also be connected to the first dielectric substrate 5 in parallel with the semiconductor light modulation element 6 .

[0037] The second support block 9 is a block obtained by plating a metal material such as Au on the surface of a material with high thermal conductivity such as Cu, and is bonded to the surface of the metal stem 1 by solder or the like, thereby playing a role in fixing the second dielectric substrate 10, etc. The second support block 9 may be formed integrally with the metal stem 1, or may be mounted on the metal stem 1 as a separate component.

[0038] The second dielectric substrate 10 is formed in a plate shape, for example, by applying Au plating and metallization on the surface of a ceramic material such as aluminum nitride (AlN). Usually, a back ground electrode is formed on the back side (the surface fixed to the second support block 9) of the second dielectric substrate. A second signal line 10c is formed on the surface of the second dielectric substrate 10, one end of which is electrically connected to the first signal line 5c of the first dielectric substrate 5, and the other end is electrically connected to the lead pin 2a via a conductor 11 such as solder or a conductive wire. A second ground electrode pattern 10a is formed on the surface of the second dielectric substrate 10, and is electrically connected to the first dielectric substrate 5 via a conductive wire 12a.

[0039] A first metal film 13 is formed on the side surface of the second dielectric substrate 10 on the positive x-axis direction side, that is, on the side where the first dielectric substrate 5 is located, for connecting the back surface ground electrode of the second dielectric substrate 10 to the second ground electrode pattern 10a, and the second ground electrode pattern 10a is electrically connected to the second support block 9 via the first metal film 13. The first metal film 13 is formed in a region longer than at least half the length of the side surface of the second dielectric substrate 10 on which the first metal film 13 is formed.

[0040] In the structure described in Patent Document 1, a side groove or a through hole is formed in a dielectric substrate corresponding to the second dielectric substrate 10 to electrically connect a ground electrode pattern formed on the surface to a support block relative to the second support block 9. However, since it is difficult to stabilize the ground level and the grounding is far from the stem depending on the location, the grounding becomes weak. Figure 3 The high frequency transmission characteristic from the lead pin 2a to the semiconductor light modulator 6 is shown. As in the structure described in Patent Document 1, the transmission characteristic of the structure in which the second dielectric substrate 10 and the second support block 9 are connected by side grooves or through holes is Figure 3 In the through characteristic, there is a drop of about 3 dB due to the influence of signal resonance at 10 GHz, and the attenuation caused by the influence of signal reflection becomes larger in the frequency band above 20 GHz. However, in this embodiment, the side grooves or through holes are eliminated, and the second ground electrode pattern 10a is electrically connected to the second support block 9 through the first metal film 13, so that the grounding is stabilized and strengthened, and the through characteristic becomes Figure 3 The dotted line 101 is like that. However, Figure 3The transmission characteristic of the dotted line 101 shows the transmission characteristic in the state without the conductive wire 14. Thus, according to the structure of the present embodiment 1 in the state without the conductive wire 14, the drop caused by the influence of the signal resonance at 10 GHz is suppressed, the characteristic is improved by about 1 dB due to the suppression of the signal reflection in the frequency band above 20 GHz, and the cutoff frequency is widened to about 2 GHz. Thus, due to the improvement of the flatness of the transmission characteristic, that is, S21 in the S parameter and the widening of the cutoff frequency, the jitter component in the optical waveform is reduced and a good eye diagram can be obtained.

[0041] In addition, as shown in the results described in Patent Document 1, when the side grooves or through holes are formed in the second dielectric substrate 10, the conductive wire cannot be connected to the formed portion, so the installation freedom is reduced, and the manufacturing difficulty and cost are increased. By forming the first metal film 13 on the side surface of the second dielectric substrate 10, the side grooves or through holes can be eliminated, and the installation freedom of the conductive wire is improved.

[0042] By electrically connecting the second ground electrode pattern 10a to the first support block 4 using a conductive wire, the grounding is strengthened and the high-frequency characteristics are improved. However, if the conductive wire and the first support block 4 are connected to the first dielectric substrate 5, the exposed bonding material on the back of the first dielectric substrate 5 may interfere with the conductive wire and may peel off. In addition, when installing the first dielectric substrate 5, the mounting fixture may interfere with the conductive wire, which is not preferred. Therefore, if Figure 1 As shown, by forming the first pedestal 4a on the first support block 4 and bonding the conductive wire 14 thereto, the same ground reinforcement characteristics as when the conductive wire is bonded to the mounting surface of the first dielectric substrate 5 can be obtained while avoiding interference with bonding materials and jigs.

[0043] By connecting the second ground electrode pattern 10a and the first pedestal portion 4a with the conductive wire 14, it can be seen that the pass characteristic becomes Figure 3 As shown in the solid line 102 , compared with the dotted line 101 of the transmission characteristic when the conductive wire 14 is not installed, the decrease of 10 GHz is further suppressed and the cutoff frequency is widened to about 1 GHz.

[0044] A light receiving element 7 that converts an optical signal into an electrical signal (O / E conversion) is mounted on the first pedestal 4a, and can monitor the back light intensity of the semiconductor light modulator 6. The received optical signal is converted into an electrical signal, and the electrical signal is transmitted to the lead pin 2d via the connected conductive wire 12d. Since the light intensity can be monitored, the drive current to the distributed feedback laser diode can be controlled so that the light output is constant.

[0045] A second pedestal 4b may be formed on the first support block 4, and a thermistor 8 or the like may be mounted thereon. The thermistor 8 exists to indirectly observe the temperature of the semiconductor light modulator 6, and the observed temperature is fed back to the temperature control module 3. When the temperature of the semiconductor light modulator 6 is higher than the target value, the semiconductor light modulator 6 is cooled, and when it is lower, the semiconductor light modulator 6 is heated, thereby stabilizing the temperature of the semiconductor light modulator 6.

[0046] Implementation method 2.

[0047] Figure 4 FIG. 2 is an enlarged view of the main part of the semiconductor laser light source device according to Embodiment 2. Figure 4 As shown, a conductive adhesive 15 is used as a method of connecting the first support block 4 and the first metal film 13 formed on the side surface.

[0048] Figure 4 The high frequency passing characteristic of the structure becomes Figure 5 The solid line 103 represents the characteristic. Figure 4 The structure of the second ground electrode pattern 10a and the first support block 4 is electrically connected by the conductive wire 14. Figure 1 The structure shown, Figure 3 The same as the passing characteristic shown by the solid line 102 of FIG. 1, the influence of the 10 GHz resonance is suppressed, and the cutoff frequency is widened. Figure 3 Compared with the passing characteristic shown by the solid line 102, Figure 5 The pass characteristic shown by the solid line 103, that is, the cutoff frequency is further widened to about 0.5 GHz.

[0049] Implementation method 3.

[0050] Figure 6 FIG. 1 is a perspective view of the second dielectric substrate 10 of the semiconductor laser light source device according to Embodiment 3. Figure 6 As shown, a second metal film 13a and a third metal film 13b connected to a back ground electrode 13c formed on the back surface of the second dielectric substrate 10 are respectively formed on the side surface in the positive direction of the z-axis (opposite to the surface of the metal stem 1) and the side surface in the negative direction of the x-axis (opposite to the side where the first dielectric substrate 5 is located), and the second supporting block 9 is electrically connected to the second ground electrode pattern 10a via these second metal films 13a and third metal films 13b.

[0051] Therefore, the grounding ratio Figure 1 The structure of the embodiment 1 shown is further strengthened, as shown in FIG. Figure 7 The through characteristic 102 in the structure of the first embodiment shown by the dotted line (the through characteristic 104 is shown by the solid line 104) is the same as the through characteristic 102 in the structure of the first embodiment shown by the dotted line (the through characteristic 102 is shown by the solid line 104). Figure 3The solid line through characteristic 102 is recorded as Figure 7 As shown in the dashed line above, the suppression of reflections around 15 GHz and the broadbandization of the cutoff frequency can be observed.

[0052] Implementation method 4.

[0053] Figure 8 , is an enlarged view of the main part of the semiconductor laser light source device of Embodiment 4. Figure 8 As shown, a fourth metal film 16 is formed on the side surface of the first dielectric substrate 5 in the positive direction of the z-axis (located on the opposite side of the surface of the metal stem) to connect the first ground electrode pattern 5a with the back ground electrode formed on the back surface of the first dielectric substrate 5, and the first ground electrode pattern 5a formed on the surface of the first dielectric substrate 5 is electrically connected to the first support block 4.

[0054] The fourth metal film 16 is electrically connected to the second metal film 13a on the side of the second dielectric substrate 10 by the conductive wire 17, and the grounding of the first dielectric substrate 5 is further strengthened. Fig. 9 As shown by the solid line 105 of the embodiment, the grounding is further strengthened compared with the structure of the first embodiment, and the through characteristic 102 (the through characteristic 102 is shown by the dotted line) in the structure of the first embodiment is Figure 3 The solid line through characteristic 102 is recorded as Figure 8 Compared with the dashed line (shown in Figure 5), the broadbanding of the cutoff frequency can be observed.

[0055] The effects of the semiconductor laser light source device of each embodiment of the present application are summarized below. Although it is impossible to combine the conductive wire into the side groove or through hole portion that was previously set, by forming a metal film on the side of the dielectric substrate, it is also possible to combine it in a place that could not be combined in the past, and the installation freedom is improved. The structure in which the metal film is formed on the side of the dielectric substrate is easier to make than the structure based on the side groove or through hole, and the cost is reduced. By forming a metal film on the side of the dielectric substrate, the low-level connection is more stable and strengthened than the side groove or through hole, and the high-frequency passing characteristics are improved.

[0056] The grounding is strengthened by connecting the second ground electrode pattern 10a formed on the surface of the second dielectric substrate 10 to the first support block 4 using a conductive wire, thereby improving the high frequency characteristics. At this time, if the bonding position of the first support block 4 is set to the surface on which the first dielectric substrate 5 is mounted, the diffusion of the back bonding material when the first dielectric substrate 5 is bonded to the first support block 4 may contact the bonding portion, and there is a concern that the conductive wire may be peeled off. Therefore, the bonding position with the first support block 4 is preferably the surface of the first pedestal portion 4a formed on the first support block where the light receiving element 7 is mounted.

[0057] The first support block 4 is connected to the first metal film 13 formed on the side surface of the second dielectric substrate 10 by the conductive adhesive 15 to strengthen the grounding and improve the high frequency characteristics.

[0058] By forming metal films on the left and right side surfaces and the upper side surface of the second dielectric substrate 10, the second metal film 13a on the upper side surface of the second dielectric substrate 10 is connected to the fourth metal film 16 on the upper side surface of the first dielectric substrate 5 by the conductive wire 17, thereby further strengthening the grounding and improving the high-frequency pass characteristics.

[0059] Although various illustrative embodiments and examples are described in this application, the various features, forms and functions described in one or more embodiments are not limited to the application of a specific embodiment, and can be applied to the embodiments alone or in various combinations. Therefore, countless unillustrated variations can be imagined within the technical scope disclosed in the specification of this application. For example, it includes the case where at least one constituent element is deformed, added or omitted, and the case where at least one constituent element is extracted and combined with constituent elements of other embodiments.

[0060] Description of Reference Numerals

[0061] 1...metal stem; 2a, 2b, 2c, 2d, 2e...lead pins; 3...temperature control module; 4...first support block; 4a...first pedestal; 4b...second pedestal; 5...first dielectric substrate; 5a...first ground electrode pattern; 5c...first signal line; 6...semiconductor optical modulator; 9...second support block; 10...second dielectric substrate; 10a...second ground electrode pattern; 10c...second signal line; 13...first metal film; 13a...second metal film; 13b...third metal film; 15...conductive adhesive; 16...fourth metal film; 17...conductive wire; 30...airtight sealing cover.

Claims

1. A semiconductor laser light source device, characterized in that: have: A metal tube holder having a plurality of lead pins penetrating through the back surface and the surface and being fixed; A temperature control module, which is fixed to the surface of the metal tube seat; a first metal support block fixed to a surface of the temperature control module opposite to a surface fixed to the metal stem and having a first surface perpendicular to a surface of the metal stem; A first dielectric substrate, the back surface of which is fixed to the first surface of the first support block, a semiconductor light modulator is fixed on the surface, and a first ground electrode pattern and a first signal line having one end electrically connected to the semiconductor light modulator are formed; a second metal support block fixed to the surface of the metal tube seat and having a second surface parallel to the first surface of the first support block; as well as a second dielectric substrate, the back side of which is fixed to the second side of the second supporting block, and the surface of which is formed with a second signal line and a second ground electrode pattern electrically connected to the first ground electrode pattern, one end of the second signal line being electrically connected to one of the lead pins, and the other end of the second signal line being electrically connected to the other end of the first signal line, A first metal film electrically connected to the second ground electrode pattern is formed in a region having at least a half length of a side surface of the second dielectric substrate located on the first dielectric substrate side.

2. The semiconductor laser light source device according to claim 1, characterized in that: On the side of the first support block fixed to the temperature control module, a first seat portion is formed, which extends from the first surface in a direction parallel to the surface of the temperature control module on which the first support block is fixed, and has a conductive wire that electrically connects the second ground electrode pattern and the first seat portion.

3. The semiconductor laser light source device according to claim 1, characterized in that: A first seat portion extending from the first surface in a direction parallel to the surface of the temperature control module to which the first support block is fixed is formed on the side of the first support block fixed to the temperature control module, and the first metal film is electrically connected to the first seat portion by a conductive adhesive.

4. The semiconductor laser light source device according to any one of claims 1 to 3, characterized in that: A second metal film is formed on a side surface of the second dielectric substrate opposite to the metal stem seat over a region greater than half the length of the side surface, and a third metal film is formed on a side surface opposite to the side surface on which the first metal film is formed over a region greater than half the length of the side surface.

5. The semiconductor laser light source device according to claim 4, characterized in that: A fourth metal film electrically connecting the first ground electrode pattern and the first support block is formed in a region of at least half the length of the side surface of the first dielectric substrate opposite to the metal stem, and the second metal film and the fourth metal film are connected by a conductive wire.

6. The semiconductor laser light source device according to any one of claims 1 to 5, characterized in that: A hermetic sealing cover is provided which covers the surface side of the metal stem.

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