Low dielectric resin composition

By using a specific proportion of low dielectric resin compositions of epoxy resin, active ester compound, curing agent and inorganic filler materials in the IC substrate layering material, the problem of high dielectric loss of existing layering materials is solved, and low dielectric loss and dimensional stability is achieved, which is suitable for high frequency and high computing applications.

CN120005486APending Publication Date: 2025-05-16NANYA PLASTICS CORP
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Patent Information

Application Number
CN202311553009.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-11-16
Filing Date
2023-11-20
Publication Date
2025-05-16

AI Technical Summary

Technical Problem

The dielectric loss of existing IC substrate augmentation materials is relatively high, making it difficult to meet the needs of high frequency and high computing rapid transmission.

Method used

A low dielectric resin composition is provided, which comprises an epoxy resin, an active ester compound, a curing agent and an inorganic filler material, with a specific component ratio of 5-30%, an active ester compound 5-40%, a curing agent 0.1-20%, an inorganic filler material at least 40%, and a ratio of the content of the active ester compound divided by the content of the curing agent is between 0.5-20.

Benefits of technology

The low dielectric resin composition can significantly reduce dielectric loss and improve the dimensional stability of the material, making it suitable for applications with high frequency and high computing and rapid transmission.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention relates to a low dielectric resin composition. The low-dielectric resin composition comprises epoxy resin, an active ester compound, a curing agent and an inorganic filling material. Based on 100 mass% of the total weight of the low dielectric resin composition, the content of the epoxy resin is 5 mass% to 30 mass%, the content of the active ester compound is 5 mass% to 40 mass%, the content of the curing agent is 0.1 mass% to 20 mass%, and the content of the inorganic filler is at least 40 mass%. Wherein the ratio of the content of the active ester compound divided by the content of the curing agent is between 0.5 and 20. Therefore, the material has good dielectric properties (such as low dielectric loss Df) and dimensional stability, and is beneficial to the application of high-frequency high-operation rapid transmission in the future.
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Description

Technical Field

[0001] The present invention relates to a resin composition, in particular to a resin composition with low dielectric loss, which can be used as a build-up layer material for an IC substrate. Background Art

[0002] In recent years, with the rapid development of integrated circuit (IC) technology, the specifications of IC substrates in related electronic products have been raised based on the design of high-speed computing chips (e.g., the wiring density of IC substrates needs to be denser, and the transmission rate needs to be higher). As a result, the build-up materials in IC substrates tend to develop towards lower dielectric properties. The dielectric loss of current build-up materials is relatively high, which is not conducive to future high-frequency and high-computing and fast-transmission applications.

[0003] Therefore, the inventors felt that the above defects could be improved, and through intensive research and application of scientific principles, they finally proposed the present invention which has a reasonable design and effectively improves the above defects. Summary of the invention

[0004] The technical problem to be solved by the present invention is to provide a low dielectric resin composition in view of the deficiencies of the prior art.

[0005] In order to solve the above technical problems, one of the technical solutions adopted by the present invention is to provide a low dielectric resin composition, which includes: an epoxy resin; an active ester compound; a curing agent; and an inorganic filler; wherein, based on the total weight of the low dielectric resin composition being 100 mass%, the content of the epoxy resin is 5 mass% to 30 mass%, the content of the active ester compound is 5 mass% to 40 mass%, the content of the curing agent is 0.1 mass% to 20 mass%, and the content of the inorganic filler is at least 40 mass%; wherein the ratio of the content of the active ester compound divided by the content of the curing agent is between 0.5 and 20.

[0006] Preferably, the ratio of the content of the active ester compound divided by the content of the curing agent is between 8 and 17.44.

[0007] Preferably, the curing agent is at least one of bisphenol A-type epoxy resin (BPA) and hydrogenated bisphenol A-type epoxy resin.

[0008] Preferably, the inorganic filler material is spherical silica particles.

[0009] Preferably, the surface of the spherical silica particles is modified with at least one of an epoxy group, an acrylic group and a vinyl group, and the purity of silica in the spherical silica particles is not less than 95% by mass;

[0010] Preferably, the average particle size D50 of the spherical silica particles is between 0.05 μm and 5 μm, and the specific surface area of ​​the spherical silica particles is between 1 m 2 / g to 10m 2 / g.

[0011] Preferably, the low dielectric resin composition further comprises: a siloxane coupling agent; and an accelerator; wherein, based on the total weight of the low dielectric resin composition being 100 mass %, the content of the siloxane coupling agent is 0.01 mass % to 5 mass %, and the content of the accelerator is 0.01 mass % to 5 mass %.

[0012] Preferably, the accelerator is at least one of an imidazole compound and an amine-based hardening accelerator.

[0013] Preferably, the accelerator is an imidazole compound, and is at least one selected from the group consisting of the following materials: 1-methylimidazole, 2-methylimidazole, 2-ethylimidazole, 2-isopropylimidazole, 2-n-propylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-isopropyl-2-methylimidazole, 1- Cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2-phenylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 1,2-phenyl-4-methyl-5-hydroxymethylimidazole, 1-dodecyl-2-methylimidazole, 1-cyanoethyl-2-phenyl-4,5-bis(2-cyanoethoxy)methylimidazole, and 2-undecylimidazole.

[0014] Preferably, the epoxy resin comprises a naphthol-type novolac epoxy resin and a bisphenol F-type epoxy resin, and is mixed in a weight ratio of 1:2 to 2:1; wherein the active ester compound is at least one of an active ester compound containing a naphthalene structure and an active ester compound containing a dicyclopentadiene-type biphenol structure.

[0015] Preferably, the dielectric constant (Dk) of the low dielectric resin composition at a signal frequency of 10 GHz is between 2.5 and 4.0, and the dielectric loss factor (Df) is not greater than 0.008.

[0016] Preferably, the dielectric constant (Dk) is between 2.8 and 3.6, and the dielectric loss (Df) is not greater than 0.004.

[0017] The beneficial effects of the present invention are that the low dielectric resin composition provided by the present invention can have good dielectric properties (such as low dielectric loss Df) and dimensional stability through the technical scheme of "epoxy resin; active ester compound; curing agent; and inorganic filler material; wherein, based on the total weight of the low dielectric resin composition being 100 mass%, the content of the epoxy resin is 5 mass% to 30 mass%, the content of the active ester compound is 5 mass% to 40 mass%, the content of the curing agent is 0.1 mass% to 20 mass%, and the content of the inorganic filler material is at least 40 mass%" and "the ratio of the content of the active ester compound divided by the content of the curing agent is between 0.5 and 20".

[0018] In order to further understand the features and technical contents of the present invention, please refer to the following detailed description of the present invention. However, the detailed description provided is only for reference and illustration and is not intended to limit the present invention. DETAILED DESCRIPTION

[0019] The above description is only a preferred feasible embodiment of the present invention, and is not intended to limit the protection scope of the present invention. All equivalent changes and modifications made according to the claims of the present invention shall fall within the protection scope of the claims of the present invention. The following is to illustrate the implementation methods disclosed in the present invention through specific specific embodiments, and those skilled in the art can understand the advantages and effects of the present invention from the contents disclosed in this specification.

[0020] The present invention may be implemented or applied through other different specific embodiments, and the details in this specification may be modified and changed in various ways based on different viewpoints and applications without departing from the concept of the present invention.

[0021] The following embodiments will further explain the relevant technical contents of the present invention in detail, but the disclosed contents are not intended to limit the protection scope of the present invention. It should be understood that although the terms "first", "second", "third" and the like may be used herein to describe various components or signals, these components or signals should not be limited by these terms.

[0022] These terms are mainly used to distinguish one component from another component, or one signal from another signal. In addition, the term "or" used in this article should include any one or more combinations of the associated listed items as appropriate.

[0023] [Low dielectric resin composition]

[0024] Since the dielectric constant of the build-up layer materials in current IC substrates is relatively high, it is not conducive to future high-frequency and high-computing fast transmission applications.

[0025] In order to solve the above technical problems, an embodiment of the present invention provides a low dielectric resin composition, which can be used as a build-up layer material for an IC substrate to meet the design requirements of high-frequency and high-speed computing chips.

[0026] In order to achieve the above-mentioned purpose, the low dielectric resin composition at least comprises the following components (all of which are non-volatile components, ie, components that will not volatilize during the drying process, or are called solid components).

[0027] (A) Epoxy resin.

[0028] (B) Active ester compound.

[0029] (C) Hardener.

[0030] (D) Inorganic filler material.

[0031] Further, based on 100% by mass of the total weight of the low dielectric resin composition (or based on 100% by mass of the total weight of all non-volatile components in the resin composition), (A) the content of the epoxy resin is 5% to 30% by mass, (B) the content of the active ester compound is 5% to 40% by mass, (C) the content of the curing agent is 0.1% to 20% by mass, and (D) the content of the inorganic filler is at least 40% by mass.

[0032] More specifically, the content of (A) epoxy resin is 10% to 20% by mass, the content of (B) active ester compound is 10% to 30% by mass, the content of (C) curing agent is 0.1% to 10% by mass, and the content of (D) inorganic filler is at least 50% by mass (e.g., 60% to 90% by mass), but the present invention is not limited thereto. In some embodiments of the present invention, the ratio (B / C) of the content of (B) active ester compound divided by the content of (C) curing agent is further defined as 0.5 to 20, preferably 0.8 to 18, and particularly preferably 8 to 17.44.

[0033] It is worth mentioning that the ratio (B / C) of the content of the above-mentioned (B) active ester compound divided by the content of the (C) curing agent is limited to between 0.5 and 20, preferably between 0.8 and 18, and particularly preferably between 8 and 17.44, which can help reduce the dielectric constant of the resin composition so that the build-up material in the final IC substrate can have ideal low dielectric properties (such as achieving a low Df value).

[0034] In addition, the content of the inorganic filler (D) is limited to at least 40% by mass, which can help the build-up layer material have better dimensional stability, thereby improving the reliability of the IC substrate.

[0035] Furthermore, the above-mentioned curing agent can help improve the curing effect of the resin composition.

[0036] In some embodiments of the present invention, the inorganic filler (D) may be, for example, spherical silica particles, wherein the spherical silica particles may be formed by a synthesis method (eg, a sol-gel method), but the present invention is not limited thereto.

[0037] In some embodiments of the present invention, the surface of the spherical silica particles can be further modified with at least one of an epoxy group, an acrylic group, and a vinyl group. In addition, the purity of the silica in the spherical silica particles is not less than 95% by mass, and preferably not less than 99% by mass. In some embodiments of the present invention, the average particle size D50 of the spherical silica particles can be, for example, between 0.05 microns and 5 microns, and preferably between 0.1 microns and 2 microns. In addition, the specific surface area of ​​the spherical silica particles can be, for example, between 1 m 2 / g to 10m 2 / g, and preferably between 4m 2 / g to 6m 2 / g.

[0038] According to the above configuration, the inorganic filler material can have better dispersibility in a resin composition containing, for example, epoxy resin, and helps the above build-up material to have better dimensional stability.

[0039] The low dielectric resin composition may, for example, further include the following components (all of which are non-volatile components), but the present invention is not limited thereto.

[0040] (E) Siloxane coupling agent.

[0041] (F) Accelerant.

[0042] Further, based on the total weight of the low dielectric resin composition as 100 mass%, the content of the (E) siloxane coupling agent is 0.01 mass% to 5 mass% (preferably 0.05 to 3 mass%), and the content of the (F) accelerator is 0.01 mass% to 5 mass% (preferably 0.03 to 2 mass%).

[0043] The above-mentioned (E) siloxane coupling agent can help improve the compatibility and cross-linking degree between the resin component (eg, epoxy resin) and the inorganic powder (eg, inorganic filler material).

[0044] The above-mentioned (F) accelerator can control the reactivity of the formulation system to make the reaction complete, and can also help improve the uniformity of the film surface.

[0045] In one embodiment of the present invention, the accelerator may be, for example, an imidazole compound, such as 2-ethyl-4-methylimidazole (2E4MZ), but the present invention is not limited thereto.

[0046] The dielectric constant (Dk) of the low dielectric resin composition at a signal of 10 GHz is between 2.5 and 4.0 (preferably between 2.8 and 3.6), and the dielectric loss factor (Df) is not greater than 0.008 (preferably not greater than 0.004, and particularly preferably between 0.003 and 0.004), but the present invention is not limited thereto.

[0047] In terms of processing methods, the low dielectric resin composition can be formed into a fluid coating (e.g., varnish) by dissolving and dispersing a solvent. The coating formed by the low dielectric resin composition can be further coated on a substrate (support) by a coating machine, and the coating is dried at high temperature to remove the solvent, so that the coating forms a dry low dielectric resin coating on the substrate, which can be used as a build-up material for an IC substrate.

[0048] The mass ratio between the low dielectric resin composition (non-volatile component) and the solvent (volatile component) is between 50 mass %:50 mass % and 70 mass %:30 mass %.

[0049] In addition, in one embodiment of the present invention, the solvent may be, for example, a co-solvent, and toluene and butanone may be selected and added in a volume ratio of 70-90:30-10, but the present invention is not limited thereto.

[0050] The thickness of the low dielectric resin coating (eg, build-up layer material of an IC substrate) may be, for example, between 20 micrometers and 60 micrometers, and preferably between 30 micrometers and 50 micrometers.

[0051] Furthermore, the arithmetic mean roughness (Ra) of the surface of the low dielectric resin coating may be, for example, between 30 nanometers and 100 nanometers (preferably between 40 nanometers and 60 nanometers), which is beneficial for the fabrication of ultra-fine circuits.

[0052] Possible implementation methods of material selection for components (A) to (F) are listed below, but the present invention is not limited to the following material types.

[0053] In some embodiments of the present invention, the epoxy resin (A) may be, for example, but not limited to, epoxy resins of models 7050, HP4710, HP-4700, HP-6000, HP-7200, or N-695 manufactured by Dainippon Ink & Chemicals (DIC); epoxy resins of models NC7000L, NC3000, or NC3500 manufactured by Nippon Chemical; epoxy resins of models ESN475V or ESN485 manufactured by Nippon Steel Chemical; epoxy resins of models YX4000 or YL7760 manufactured by Mitsubishi Chemical, or epoxy resins of models NPES-903, NPEL-128E, or NPEL-170 manufactured by Nan Ya Plastics. The epoxy resin may be, for example, one or more of the above materials.

[0054] In a specific embodiment of the present invention, the epoxy resin is selected from: HP-6000 (naphthol phenolic epoxy resin) and NPEL-170 (bisphenol F epoxy resin), and is mixed in a weight ratio of 1:2 to 2:1 (preferably 1:1), thereby being able to control the surface roughness of the material.

[0055] In some embodiments of the present invention, the above-mentioned (B) active ester compound may be, for example, but not limited to: at least one of an active ester compound containing a dicyclopentadiene-type biphenol structure, an active ester compound containing a naphthalene structure, an active ester compound containing an acetylated active ester compound of phenol novolac, and an active ester compound containing a benzoylated active ester compound of phenol novolac, and the active ester compound is more preferably an active ester compound containing a naphthalene structure and / or an active ester compound containing a dicyclopentadiene-type biphenol structure.

[0056] Commercially available products of active ester compounds include "EXB9451", "EXB9460", "EXB9460S", and "HPC-8000-65T" (manufactured by DIC) as active ester compounds containing a dicyclopentadiene-type biphenol structure.

[0057] Examples of the active ester compound containing a naphthalene structure include "EXB9416-70BK" and "HPC-8150" (manufactured by DIC), but the present invention is not limited thereto.

[0058] Examples of the active ester compound containing an acetylated product of phenol novolac include "DC808" (manufactured by Mitsubishi Chemical).

[0059] Examples of the active ester compound containing a benzoylated product of phenol novolac include "YLH1026" (manufactured by Mitsubishi Chemical Corporation), but the present invention is not limited thereto.

[0060] In a specific embodiment of the present invention, the active ester compound is an active ester compound containing a dicyclopentadiene-type biphenol structure, such as HPC-8000-65T, and the active ester equivalent is 220-230 g / mol, but the present invention is not limited thereto.

[0061] In some embodiments of the present invention, the curing agent (C) may be, for example, at least one of bisphenol A-type epoxy resin (BPA) and its derivatives (such as hydrogenated bisphenol A-type epoxy resin).

[0062] In a specific embodiment of the present invention, the curing agent is bisphenol A epoxy resin, but the present invention is not limited thereto.

[0063] In some embodiments of the present invention, the above-mentioned (D) inorganic filler material is spherical silica particles, and the surface of the spherical silica particles is modified with epoxy groups.

[0064] In a specific embodiment of the present invention, the inorganic filler material is at least one of EQH 1003-SES spherical silica particles (available from Sanshiji) and EQH 1003-SMS spherical silica particles (available from Sanshiji).

[0065] In some embodiments of the present invention, the above-mentioned (E) siloxane coupling agent can be at least one of Z6030 siloxane coupling agent manufactured by Dow Toray, Momentive A-187S siloxane coupling agent (silane containing epoxy functional groups), and 3-methacryloxypropyltrimethoxysilane.

[0066] In a specific embodiment of the present invention, the siloxane coupling agent is A-187S siloxane coupling agent, but the present invention is not limited thereto.

[0067] In some embodiments of the present invention, the accelerator (F) is preferably an imidazole compound.

[0068] In some embodiments of the present invention, the imidazole compound used as the accelerator is at least one selected from the group consisting of the following materials: 1-methylimidazole, 2-methylimidazole, 2-ethylimidazole, 2-isopropylimidazole, 2-n-propylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-isopropyl-2-methylimidazole, oxadiazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2-phenylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 1,2-phenyl-4-methyl-5-hydroxymethylimidazole, 1-dodecyl-2-methylimidazole, 1-cyanoethyl-2-phenyl-4,5-bis(2-cyanoethoxy)methylimidazole, and 2-undecylimidazole.

[0069] Preferably, the imidazole compound used as the accelerator is at least one selected from the group consisting of: 2-methylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, and 2-undecylimidazole. Particularly preferably, the accelerator is 2-ethyl-4-methylimidazole (2E4MZ), but the present invention is not limited thereto.

[0070] In some other embodiments of the present invention, the accelerator may also be, for example, an amine-based hardening accelerator, such as at least one of triethylamine, tributylamine, 4-dimethylaminopyridine (DMAP), 2,4,6-tris(dimethylaminomethyl)phenol, 1,8-diazabicyclo[5,4,0]-undecene-7 (DBU), and 1,5-diazabicyclo[4,3,0]-nonene-5 (DBN).

[0071] According to the above configuration, the low dielectric resin composition provided by the embodiment of the present invention can be suitable for preparing build-up layer materials in IC substrates, and has a low dielectric constant, which is beneficial to the application of high frequency, high computing and fast transmission.

[0072] The resin composition material of the embodiment of the present invention can be appropriately used to form the insulating layer of the printed wiring board (for the insulating layer of the printed wiring board). The printed wiring board can use the above-mentioned resin film material, and the resin composition layer of the resin film material is bonded to the inner substrate, and the process method of laminating the resin film material on the inner substrate is used to manufacture. The inner substrate refers to a component that becomes the substrate of the printed wiring board, and examples thereof include glass epoxy substrates, metal substrates, polyester substrates, polyimide substrates, bismaleimide triazine resin (BT) resin substrates, thermosetting polyphenylene ether substrates, etc. In addition, the substrate can have a conductor layer on one or both sides thereof, and the conductor layer can be patterned.

[0073] The inner substrate and the resin sheet can be laminated by, for example, heating and pressing the resin sheet to the inner substrate from the support side. As components for heating and pressing the resin sheet to the inner substrate, for example, heated metal plates (SUS end plates, etc.) or metal rollers (SUS rollers) can be listed. The heating and pressing component is pressed against the resin sheet, and is pressed through elastic materials such as heat-resistant rubber so that the resin sheet fits the surface unevenness of the inner substrate. The lamination of the inner substrate and the resin sheet can be implemented by vacuum lamination, and the heating and pressing temperature range is 80 to 140°C, the heating and pressing pressure range is 0.05 to 1.5 MPa, and the heating and pressing time range is 20 to 300 seconds.

[0074] The resin composition layer is cured to form a cured product from the resin composition. The heat curing conditions of the resin composition layer vary depending on the type of the resin composition, etc., but the curing temperature is preferably from 120°C to 240°C.

[0075] [Experimental data test]

[0076] The present invention is described in detail below with reference to Examples 1 to 5 and Comparative Example 1. However, the following examples are only provided to help understand the present invention, and the scope of the present invention is not limited to the following examples.

[0077] Example 1: A resin composition was prepared, comprising: (A) epoxy resin (11.6 parts by weight of HP6000 and 11.6 parts by weight of NPEL-170), (B) active ester compound (7.86 parts by weight of HPC-8000), (C) curing agent (9.1 parts by weight of BPA), (D) inorganic filler (100 parts by weight of EQH1003-SES), (E) siloxane coupling agent (0.2 parts by weight of A-187S), (F) accelerator (0.1 parts by weight of 2E4MZ), totaling 141.32 parts by weight. Among them, the inorganic filler (D) accounted for 70.7% by weight (i.e., 100 / 141.32), and the ratio of the content of the active ester compound (B) divided by the content of the curing agent (C) (B) / (C) was 0.86.

[0078] Then, the above-mentioned resin combination is dissolved and dispersed by a solvent to form a varnish-like coating. The coating is applied to a support by a coating machine, and as a support, it can be a material such as a plastic film, a metal foil (embodiment 1 is a plastic film). As the material of the plastic film, it can be selected from the following materials: polyesters such as polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polymethyl methacrylate (the plastic film of embodiment 1 is polyethylene terephthalate). The coating is dried by an oven high temperature to remove the solvent, so that the coating is formed as a dry resin coating on the support.

[0079] The mass ratio of the resin composition (non-volatile component) to the solvent (volatile component) is 70 mass %:30 mass %. The solvent is a co-solvent and is selected from toluene and butanone, and is configured in a volume ratio of 90:10. In addition, the resin coating has a thickness of about 40 microns.

[0080] The preparation methods of Examples 2 to 5 are substantially the same as those of Example 1, except for the selection and proportion of materials.

[0081] The preparation method of Comparative Example 1 is substantially the same as that of the above-mentioned Example 1, except for the selection and proportion of materials, and the fact that the curing agent Bisphenol-A (BPA) is not used in Comparative Example 1.

[0082] The preparation conditions and test results of Examples 1 to 5 and Comparative Example 1 are summarized in Table 1.

[0083] Next, the resin composition materials prepared in Examples 1 to 5 and Comparative Example 1 were heated at 200° C. for 90 minutes to thermally cure the resin composition layer, and then the support was peeled off to obtain a cured product for evaluation. The test was performed to obtain relevant test results.

[0084] The test methods for the relevant tests are described below.

[0085] Glass transition temperature Tg (°C): The glass transition temperature Tg (°C) of the material was measured using a thermomechanical analyzer (TMA) according to the standard test method of ASTM E1545.

[0086] Thermal expansion coefficient CTE (ppm / ℃): The thermal expansion coefficient of the material in the XY plane, i.e., XY CTE (ppm / ℃), is measured using a thermomechanical analyzer (TMA) according to the standard test method of IPC-TM-650 2.4.24. The test temperature range is 25℃~150℃.

[0087] Dk and Df: According to the standard test method of IPC-TM-650 (Method 2.5.5.3), the material sample is placed in a fixture for testing to determine the dielectric constant (Dk, εr) and dielectric loss factor (Df, Tanδ, also known as loss factor) of the material under a 10GHz signal.

[0088] Arithmetic mean roughness Ra (nm): measured using an atomic force microscope (AFM).

[0089] Whether the varnish has phase separation: After the coating formed by the resin composition and the solvent (toluene and butanone) in a fluid state (such as varnish) is left to stand for 24 hours, observe with the naked eye whether the coating has phase separation.

[0090] Smooth appearance of coating surface: The coating formed after the paint dries (the solvent is removed) is observed with the naked eye to see whether the surface appearance of the coating is smooth.

[0091] [Table 1]

[0092]

[0093] From the above experimental results, it can be known that the ratio of the content of the (B) active ester compound divided by the content of the (C) curing agent (i.e., the (B) / (C) ratio) in Examples 1 to 5 all fall within the range of 0.5 to 20 (specifically between 0.86 and 17.44), which can help reduce the dielectric constant and dielectric loss of the resin composition. In particular, based on increasing the content of the (B) active ester compound and reducing the content of the (C) curing agent, the (B) / (C) ratio can be increased to achieve a lower dielectric loss (Df). Preferably, in Examples 4 to 5, the ratio of the content of the (B) active ester compound divided by the content of the (C) curing agent (i.e., the (B) / (C) ratio) is 8 to 17.44, and the dielectric loss under the test signal of 10 GHz is 0.0038 to 0.004, which has good dielectric properties. Furthermore, the content of the inorganic filler (C) in Examples 1 to 5 is within the range of 60 mass % to 90 mass %, which can help improve the dimensional stability of the material.

[0094] Furthermore, Comparative Example 1 does not use BPA curing agent, so the (B) / (C) ratio cannot be adjusted. In the test results, Comparative Example 1 cannot obtain the ideal dielectric constant and dielectric loss.

[0095] It should be noted that patents involving compositions are often expressed in two ways, namely "parts by weight (phr)" and "mass percentage (mass %)". The "parts expression" of a composition reflects the proportional relationship between the components, so the "parts expression" does not have the restrictions of "the formulas of upper and lower limits and the sum of percentages in the embodiment equal to 100wt%" in the "percentage expression". The two "upper and lower limit requirement formulas" are: the upper limit value of the content of a single component plus the lower limit value of the content of the remaining components must be less than or equal to 100wt%; or, the lower limit value of the content of a single component plus the upper limit value of the content of the remaining components must be greater than or equal to 100wt%. If the parts by weight are converted to percentage expression, it means that there is a percentage basis, that is, there is a total amount basis, and the upper and lower limit rules must be followed. Example of conversion method: For example, a composition includes 50 parts by weight of A and 30 parts by weight of B. After conversion, it becomes a composition including 50 / (50+30) mass% of A and 30 / (50+30) mass% of B.

[0096] [Beneficial Effects of Embodiments]

[0097] The beneficial effects of the present invention are that the low dielectric resin composition provided by the present invention can be made into a material having good dielectric properties (such as low Df) and dimensional stability through the technical schemes of “epoxy resin; active ester compound; curing agent; and inorganic filler material; wherein, based on the total weight of the low dielectric resin composition being 100 mass%, the content of the epoxy resin is 5 mass% to 30 mass%, the content of the active ester compound is 5 mass% to 40 mass%, the content of the curing agent is 0.1 mass% to 20 mass%, and the content of the inorganic filler material is at least 40 mass%” and “the ratio of the content of the active ester compound divided by the content of the curing agent is between 0.5 and 20”, so as to be beneficial to the future application of high frequency, high computing and fast transmission.

[0098] The contents disclosed above are only preferred feasible embodiments of the present invention, and are not intended to limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made using the contents of the present invention specification are included in the scope of the claims of the present invention.

Claims

1. A low dielectric resin composition, characterized in that: The low dielectric resin composition comprises: Epoxy resin; Active ester compounds; Curing agent; and Inorganic filling materials; Wherein, based on the total weight of the low dielectric resin composition as 100 mass%, the content of the epoxy resin is 5 mass% to 30 mass%, the content of the active ester compound is 5 mass% to 40 mass%, the content of the curing agent is 0.1 mass% to 20 mass%, and the content of the inorganic filler is at least 40 mass%; Wherein, the ratio of the content of the active ester compound divided by the content of the curing agent is between 0.5 and 20.

2. The low dielectric resin composition according to claim 1, characterized in that: The ratio of the content of the active ester compound divided by the content of the curing agent is between 8 and 17.

44.

3. The low dielectric resin composition according to claim 1, characterized in that: The curing agent is at least one of bisphenol A epoxy resin and hydrogenated bisphenol A epoxy resin.

4. The low dielectric resin composition according to claim 1, characterized in that: The inorganic filling material is spherical silicon dioxide particles.

5. The low dielectric resin composition according to claim 4, characterized in that: The surfaces of the spherical silica particles are modified with at least one of an epoxy group, an acrylic group, and a vinyl group, and the purity of silica in the spherical silica particles is not less than 95% by mass.

6. The low dielectric resin composition according to claim 5, characterized in that: The average particle size D50 of the spherical silica particles is between 0.05 μm and 5 μm, and the specific surface area of ​​the spherical silica particles is between 1 m 2 / g to 10m 2 / g.

7. The low dielectric resin composition according to claim 1, characterized in that: The low dielectric resin composition further comprises: Siloxane coupling agents; and Accelerators; Wherein, based on 100 mass % of the total weight of the low dielectric resin composition, the content of the siloxane coupling agent is 0.01 mass % to 5 mass %, and the content of the accelerator is 0.01 mass % to 5 mass %.

8. The low dielectric resin composition according to claim 7, characterized in that: The accelerator is at least one of an imidazole compound and an amine-based hardening accelerator.

9. The low dielectric resin composition according to claim 8, characterized in that: The accelerator is an imidazole compound, and is at least one selected from the group consisting of the following materials: 1-methylimidazole, 2-methylimidazole, 2-ethylimidazole, 2-isopropylimidazole, 2-n-propylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-isopropyl-2-methylimidazole, 1-cyano ethyl-2-methylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2-phenylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 1,2-phenyl-4-methyl-5-hydroxymethylimidazole, 1-dodecyl-2-methylimidazole, 1-cyanoethyl-2-phenyl-4,5-bis(2-cyanoethoxy)methylimidazole, and 2-undecylimidazole.

10. The low dielectric resin composition according to claim 1, characterized in that: The epoxy resin comprises a naphthol-type novolac epoxy resin and a bisphenol F-type epoxy resin, and is mixed in a weight ratio of 1:2 to 2:1; wherein the active ester compound is at least one of an active ester compound containing a naphthalene structure and an active ester compound containing a dicyclopentadiene-type biphenol structure.

11. The low dielectric resin composition according to any one of claims 1 to 10, characterized in that: The dielectric constant of the low dielectric resin composition under a 10 GHz signal is between 2.5 and 4.0, and the dielectric loss is not greater than 0.

008.

12. The low dielectric resin composition according to claim 11, characterized in that: The dielectric constant is between 2.8 and 3.6, and the dielectric loss is not greater than 0.004.